Semiconductor device and manufacturing method thereof

Abstract

The invention provides a semiconductor device and a manufacturing method thereof, and the method comprises the steps: bonding the surface of a first substrate with a second substrate, and forming a first groove in the surface of the first substrate; the second substrate is etched, and a first penetrating structure penetrating through the surface and the back face of the second substrate is formed in the second substrate; the third substrate and the second substrate are bonded, and a second groove is formed in the surface of the third substrate; etching a cover plate structure formed based on the third substrate, and forming a second through structure in the cover plate structure; and in an environment with first air pressure, a first thin film layer is deposited on the surface of the cover plate structure, the first thin film layer blocks the second penetrating structure, the first thin film layer is provided with a third penetrating structure, the surface of the third substrate or the surface of the second substrate is exposed from the third penetrating structure, and the first air pressure is lower than the standard atmospheric pressure. The method is high in universality and simple in process, and the prepared device is high in reliability.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a semiconductor device and a method for manufacturing the same. Background Art

[0002] Semiconductor devices such as integrated circuits (ICs) and microelectromechanical systems (MEMS) typically require complex manufacturing processes, including etching, bonding, and deposition. For example, in the manufacture of inertial sensors, processes such as etching are used to form a movable structure in the substrate, and bonding is used to bond the cover to the substrate.

[0003] It should be noted that the above introduction to the technical background is merely intended to provide a clear and complete description of the technical solutions of this application and facilitate understanding by those skilled in the art. Simply because these solutions are described in the background technology section of this application, it should not be assumed that the above technical solutions are well known to those skilled in the art. Summary of the Invention

[0004] The inventors of this application have discovered that, during the research, development, and manufacturing of semiconductor devices, it is necessary to formulate corresponding process flows in combination with the actual processing capabilities of the processing platform. Therefore, how to design the processing flow of semiconductor devices to achieve goals such as strong versatility, simple process, and high reliability of the prepared devices is a problem that needs to be solved.

[0005] According to one aspect of an embodiment of the present application, a method for manufacturing a semiconductor device is provided, the method comprising:

[0006] bonding a surface of a first substrate to a second substrate, wherein a first groove is formed on the surface of the first substrate;

[0007] Etching the second substrate to form a first through-structure in the second substrate that penetrates the front and back surfaces of the second substrate, wherein positions of at least a portion of the first through-structure correspond to positions of the first groove in a direction parallel to the surface of the second substrate;

[0008] Bonding the third substrate to the second substrate, wherein a second groove is formed on a surface of the third substrate, and in a direction parallel to the surface of the second substrate, positions of at least part of the first through structures correspond to positions of the second groove;

[0009] Etching a cover structure formed based on the third substrate to form a second through-structure in the cover structure, wherein at least a portion of the second through-structure corresponds to a position of the second groove in a direction parallel to a surface of the second substrate; and

[0010] In an environment with a first air pressure, a first thin film layer is deposited on the surface of the cover structure, the first thin film layer blocks the second through-structure, and the first thin film layer has a third through-structure, the third through-structure is staggered from the second through-structure, the surface of the third substrate or the surface of the second substrate is exposed from the third through-structure, and the first air pressure is lower than the standard atmospheric pressure.

[0011] In at least one embodiment: the material of the first substrate is silicon; and / or

[0012] The material of the second substrate is silicon; and / or

[0013] The material of the third substrate is silicon.

[0014] In at least one embodiment:

[0015] The resistivity of the third substrate is higher than that of the second substrate,

[0016] The cover structure is the third substrate,

[0017] A surface of the second substrate is exposed from a bottom of the third through structure.

[0018] In at least one embodiment:

[0019] The resistivity of the third substrate is less than or equal to the resistivity of the second substrate,

[0020] The cover structure includes the third substrate and an isolation layer formed on the surface of the third substrate.

[0021] A surface of the third substrate is exposed from a bottom of the third through structure.

[0022] In at least one embodiment, forming a second through-structure in the cover structure includes:

[0023] forming a through structure in the third substrate, wherein at least a portion of the through structure is in communication with the second groove;

[0024] forming the isolation layer on the surface of the third substrate to form a cover structure including the third substrate and the isolation layer; and

[0025] The isolation layer and the third substrate are etched to form the second through structure.

[0026] In at least one embodiment, the isolation layer further has a through-hole structure, and the surface of the third substrate is exposed from the bottom of the through-hole structure.

[0027] In at least one embodiment, the method further comprises:

[0028] forming an insulating layer on a surface of the first substrate;

[0029] The surface of the first substrate is bonded to the second substrate through the insulating layer.

[0030] In at least one embodiment, the method further comprises:

[0031] An electrode is formed in the third through-structure, and the electrode is in contact with the second substrate or the third substrate.

[0032] In at least one embodiment, a semiconductor device is provided, comprising:

[0033] A first substrate having a first groove formed on its surface;

[0034] a second substrate bonded to a surface of the first substrate, wherein a first through-structure is formed in the second substrate and penetrates the front and back surfaces of the second substrate, and in a direction parallel to the surface of the second substrate, positions of at least a portion of the first through-structure correspond to positions of the first grooves;

[0035] a cover structure comprising a third substrate, the third substrate being bonded to the second substrate, a second groove being formed on a surface of the third substrate, at least a portion of the first through-structures corresponding to a position of the second groove in a direction parallel to the surface of the second substrate, and a second through-structure being formed in the cover structure, at least a portion of the second through-structure corresponding to a position of the second groove in a direction parallel to the surface of the second substrate; and

[0036] A first film layer is formed on the surface of the cover structure, the first film layer blocks the second through-structure, and the first film layer has a third through-structure, the third through-structure is offset from the second through-structure, and the surface of the third substrate or the surface of the second substrate is exposed from the third through-structure,

[0037] At least part of the first through structure is connected with at least part of the first groove and at least part of the second groove to form a connecting structure, and the first air pressure in the connecting structure is lower than the standard atmospheric pressure.

[0038] In at least one embodiment, the semiconductor device further includes:

[0039] An electrode is formed in the third through structure, and the electrode is in contact with the second substrate or the third substrate.

[0040] The beneficial effects of the present application are that the method for manufacturing a semiconductor device of the present application can achieve the effects of strong versatility, simple process, and high reliability of the prepared device.

[0041] With reference to the following description and accompanying drawings, specific embodiments of the present application are disclosed in detail, indicating the manner in which the principles of the present application can be employed. It should be understood that the embodiments of the present application are not limited in scope. Within the spirit and scope of the appended claims, the embodiments of the present application include many variations, modifications and equivalents.

[0042] Features described and / or illustrated with respect to one embodiment may be used in the same or similar manner in one or more other embodiments, combined with features in other embodiments, or substituted for features in other embodiments.

[0043] It should be emphasized that the term "include / comprising" when used herein refers to the presence of features, integers, steps or components, but does not exclude the presence or addition of one or more other features, integers, steps or components. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] The included drawings are used to provide a further understanding of the embodiments of the present application, which constitute a part of the specification, are used to illustrate the implementation methods of the present application, and together with the text description, explain the principles of the present application. Obviously, the drawings described below are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without inventive work. In the drawings:

[0045] Figure 1 is a schematic diagram of a method for manufacturing a semiconductor device according to Example 1 of the present application;

[0046] Figures 2 to 12 Schematic diagram of the cross-sectional structure of the device in the corresponding steps of the method for manufacturing the semiconductor device according to the embodiment of the present application. DETAILED DESCRIPTION

[0047] The above and other features of the present application will become apparent through the following description with reference to the accompanying drawings. In the description and the accompanying drawings, specific embodiments of the present application are disclosed in detail, which illustrate some embodiments in which the principles of the present application can be adopted. It should be understood that the present application is not limited to the described embodiments. On the contrary, the present application includes all modifications, variations and equivalents that fall within the scope of the appended claims.

[0048] For example, when describing the embodiments of the present invention, cross-sectional views of device structures may be partially enlarged to scale for ease of explanation. Furthermore, these schematic views are merely illustrative and should not limit the scope of the present invention. Furthermore, in actual manufacturing, three-dimensional dimensions, including length, width, and depth, should be included.

[0049] For convenience, spatially relative terms such as "under," "below," "below," "below," "above," and "on" may be used herein to describe the relationship of one element or feature to other elements or features shown in the drawings. It will be understood that these spatially relative terms are intended to encompass orientations of the device in use or operation in addition to the orientation depicted in the drawings. Additionally, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.

[0050] In the context of the present application, a structure described as a first feature being "above" a second feature may include embodiments where the first and second features are formed in direct contact, and may also include embodiments where an additional feature is formed between the first and second features, such that the first and second features may not be in direct contact.

[0051] In the description of each embodiment of the present application, for convenience of description, the direction parallel to the surface of the substrate (e.g., the first substrate, the second substrate, or the third substrate) is referred to as the "lateral direction," and the direction perpendicular to the surface of the substrate is referred to as the "longitudinal direction." The "thickness" of each component refers to the dimension of the component in the "longitudinal direction." In the "longitudinal direction," the direction from the first substrate to the second substrate is referred to as the "upward" direction, and the direction opposite to the "upward" direction is referred to as the "downward" direction. It should be noted that the above description of direction or orientation does not limit the direction or orientation of the semiconductor device during actual manufacturing or use.

[0052] Example 1

[0053] Embodiment 1 of the present application provides a method for manufacturing a semiconductor device.

[0054] Figure 1 FIG. 1 is a schematic diagram of a method for manufacturing a semiconductor device according to Example 1 of the present application. Figure 1 As shown, the method includes:

[0055] 101. Bonding a surface of a first substrate to a second substrate, wherein a first groove is formed on the surface of the first substrate;

[0056] 102. Etching the second substrate to form a first through-structure in the second substrate that penetrates the front and back surfaces of the second substrate, wherein positions of at least a portion of the first through-structure correspond to positions of the first groove in a direction parallel to the surface of the second substrate;

[0057] 103. Bond the third substrate to the second substrate, wherein a second groove is formed on a surface of the third substrate, and in a direction parallel to the surface of the second substrate, positions of at least part of the first through structures correspond to positions of the second groove;

[0058] 104. Etching a cover structure formed based on the third substrate to form a second through-structure in the cover structure, wherein at least a portion of the second through-structure corresponds to a position of the second groove in a direction parallel to a surface of the second substrate; and

[0059] 105. In an environment with a first air pressure, a first thin film layer is deposited on the surface of the cover structure, the first thin film layer blocks the second through-structure, and the first thin film layer has a third through-structure, the third through-structure is staggered from the second through-structure, the surface of the third substrate or the surface of the second substrate is exposed from the third through-structure, and the first air pressure is lower than standard atmospheric pressure.

[0060] The manufacturing method of the semiconductor device of the present application has the advantages of strong versatility, simple process, and high reliability of the prepared device.

[0061] In this embodiment, the first, second, and third substrates may be commonly used substrate materials in the semiconductor manufacturing field, such as silicon wafers, silicon-on-insulator (SOI) wafers, silicon-germanium wafers, germanium wafers, gallium nitride wafers, silicon carbide (SiC) wafers, etc., or insulating wafers such as quartz, sapphire, and glass. In addition, various thin films and structures required for semiconductor devices and micro-electromechanical systems (MEMS) devices may be further formed on the surface of the first, second, or third substrates. This embodiment does not limit this.

[0062] For example, the materials of the first substrate, the second substrate and the third substrate are all silicon. As a result, the types of materials in the semiconductor device are fewer, the process difficulty is reduced, and the problem of reduced device reliability caused by differences in physical properties such as thermal expansion coefficients of different materials can be reduced.

[0063] In some examples, the resistivity of the third substrate is higher than that of the second substrate. Furthermore, the resistivity of the third substrate may also be higher than that of the first substrate. For example, the first and second substrates may be low-resistivity silicon, with a resistivity of, for example, less than or equal to 0.01 Ω*cm, while the third substrate may be high-resistivity silicon, with a resistivity of, for example, greater than or equal to 5000 Ω*cm. The higher resistivity of the third substrate avoids the need for complex isolation patterns for different electrical connection areas on the third substrate, thus simplifying the process and saving photolithography patterns.

[0064] In a case where the resistivity of the third substrate is higher than that of the second substrate, the cover structure of operation 104 may be the third substrate, and the second through-structure formed in the cover structure may penetrate the third substrate.

[0065] It should be noted that when the resistivity of the third substrate is higher than that of the second substrate, a through-hole structure can be formed in the third substrate so that the surface of the second substrate is exposed from the bottom of the through-hole structure, and when etching to form the third through-hole structure, the third through-hole structure is aligned with the through-hole structure so that the third through-hole structure and the first thin film layer in the through-hole structure are both removed, so that the surface of the second substrate can be exposed from the bottom of the third through-hole structure.

[0066] In other examples, the resistivity of the third substrate may be equal to or less than the resistivity of the second substrate. Furthermore, the resistivity of the third substrate may be equal to or less than the resistivity of the first substrate. For example, the resistivity of the first substrate may be less than or equal to 0.01 Ω*cm, the resistivity of the second substrate may be less than or equal to 0.01 Ω*cm, and the resistivity of the third substrate may be greater than or equal to 5000 Ω*cm.

[0067] It should be noted that, when the resistivity of the third substrate is less than or equal to that of the second substrate, the surface of the third substrate is exposed from the bottom of the third through-structure. Thus, the third substrate can lead electrical signals from the second substrate and output the electrical signals through the electrodes in the third through-structure. Furthermore, the cover structure of operation 104 may include a third substrate and an isolation layer formed on the surface of the third substrate, and the method of forming the second through-structure in the cover structure may include the following operations:

[0068] 1041. Form a through structure in the third substrate, wherein at least a portion of the through structure is connected to the second groove;

[0069] 1042. Form the isolation layer on the surface of the third substrate to form a cover structure including the third substrate and the isolation layer; and

[0070] 1043. Etch the isolation layer and the third substrate to form the second through structure.

[0071] The isolation layer may be an insulating material, such as silicon oxide, silicon nitride, or silicon oxynitride.

[0072] By setting an isolation layer to cover the third substrate, the diffusion of dopants in the third substrate into the environment can be suppressed. For example, if the deposition machine used to deposit the first thin film layer in operation 105 requires a non-doped substrate, the third substrate is difficult to meet the requirements of the deposition machine because it is a low-resistance silicon wafer. At this time, setting an isolation layer on the third substrate can suppress the diffusion of dopants in the third substrate into the deposition chamber of the deposition machine, thereby meeting the requirements of the deposition machine.

[0073] In the present application, the isolation layer may also have a through-hole structure, which corresponds to the position of the third through-hole structure. Thus, in the process of depositing the first thin film layer in operation 105, the first thin film layer can fill the through-hole structure, and in the process of etching the first thin film layer to form the third through-hole structure, the first thin film layer in the through-hole structure can be removed, so that the surface of the third substrate is exposed from the bottom of the through-hole structure.

[0074] In this application, if Figure 1 As shown, the manufacturing method also includes:

[0075] 100. Form an insulating layer on a surface of a first substrate.

[0076] Operation 100 may be performed before operation 101. Thus, in operation 101, the surface of the first substrate may be bonded to the second substrate via the insulating layer. For example, in operation 100, a silicon oxide layer may be formed as the insulating layer by thermal oxidation; in operation 101, silicon-oxygen bonding is performed between the first substrate and the second substrate.

[0077] In addition, the present application may not have operation 100 , and thus silicon-silicon bonding may be performed between the first substrate and the second substrate.

[0078] In this application, if Figure 1 As shown, the manufacturing method further includes:

[0079] 101a. After bonding the second substrate to the first substrate and before etching the second substrate to form the first through structure, thinning the second substrate from the back side of the second substrate to a first predetermined thickness.

[0080] Operation 101a can be performed before operation 102. Operation 101a can reduce the thickness of the second substrate, thereby shortening the etching time and improving the morphology of the etching boundary during the etching to form the first through-structure in operation 102. The first predetermined thickness is, for example, about 100 μm.

[0081] In operation 102, deep silicon etching may be performed to form a first through-structure. The aspect ratio of the deep silicon etching may be, for example, 25:1, and the critical dimension (CD) may be, for example, 4-5 μm. The first through-structure formed in operation 102 may include a movable structure.

[0082] In operation 102 of the present application, the position of the first through structure corresponds to the position of the first groove, thereby saving photolithography patterns.

[0083] In operation 103 , positions of at least a portion of the first through structures correspond to positions of the second grooves, thereby saving photolithography patterns.

[0084] The first groove and the second groove can provide space for the movable structure in the first penetrating structure to move (for example, provide space for up and down movement).

[0085] In operation 103 of the present application, bonding can be performed at room temperature and pressure differential, thereby avoiding a high-temperature annealing process and thus preventing the first and second substrates from generating significant thermal stress when experiencing a large temperature difference, thereby improving the reliability of the semiconductor device. Furthermore, operation 103 can also be performed at high temperature, thereby achieving a better bonding effect.

[0086] In this application, if Figure 1 As shown, the manufacturing method further includes:

[0087] 103a. After bonding the third substrate and the second substrate together and before forming the second through structure, thinning the third substrate from the back side of the third substrate to a second predetermined thickness.

[0088] Operation 103a may be performed before operation 104. Operation 103a can reduce the thickness of the third substrate, thereby shortening the etching time and improving the morphology of the etching boundary during the etching to form the second through structure in operation 104.

[0089] In operation 103a, thinning the third substrate from the back side of the third substrate to a second predetermined thickness may include the following operations:

[0090] ① grinding and / or etching the third substrate to thin the third substrate to a third predetermined thickness; and

[0091] ② Etching the third substrate to thin the third substrate from the third predetermined thickness to the second predetermined thickness.

[0092] Therefore, by performing the processing in operation ① and then performing operation ②, the etching time in operation ② can be shortened.

[0093] For example, when the resistivity of the third substrate is higher than that of the second substrate, the third substrate can be directly etched in operation 104 to form the second through-structure. For another example, when the resistivity of the third substrate is less than or equal to that of the second substrate, the method for forming the second through-structure in operation 104 can refer to the above-mentioned operations 1041, 1042 and 1043.

[0094] In operation 104 , a second through-structure formed in the cover plate structure can communicate with at least a portion of the second groove, the first through-structure, and the first groove.

[0095] In operation 105, a first thin film layer is deposited on the surface of the cover structure at a first pressure lower than standard atmospheric pressure. This reduces the pressure within the second groove, the first through-structure, and the first groove to the first pressure. Furthermore, during the deposition of the first thin film layer, the first thin film layer gradually seals the second through-structure. In this way, even without a vacuum bonding machine, the first thin film layer can be deposited at the first pressure to reduce the pressure within the second groove, the first through-structure, and the first groove, thereby achieving a predetermined low pressure within the interconnecting structure.

[0096] In the present application, the first gas pressure is, for example, 10 mTorr to 100 mTorr, but may also be other values.

[0097] In operation 105, the deposited first thin film layer can be, for example, silicon (e.g., polycrystalline silicon or amorphous silicon) epitaxially grown on the surface of the cover structure. The epitaxial silicon can be intrinsic silicon (i.e., undoped silicon). The deposition machine is, for example, a machine used for epitaxy. In this way, a first thin film layer with low stress and relatively thick thickness can be formed. In addition, the present application is not limited to this. The first thin film layer can also be made of other materials, and the deposition machine can also be of other types.

[0098] In operation 105 , the first thin film layer may be further etched to form a third through structure penetrating the first thin film layer, thereby exposing the second substrate or the third substrate.

[0099] like Figure 1 As shown, the manufacturing method further includes:

[0100] 106. Form an electrode in the third through-structure, wherein the electrode contacts the second substrate or the third substrate.

[0101] The manufacturing method of the semiconductor device of the present application is further described below with reference to the accompanying drawings.

[0102] Figures 2 to 12 Schematic diagram of the cross-sectional structure of the device in the corresponding steps of the method for manufacturing the semiconductor device according to the embodiment of the present application.

[0103] Figures 2 to 12 In the embodiment, the third substrate is a low-resistance silicon wafer as an example for description.

[0104] like Figures 2 to 12 As shown, in some specific examples, the method for manufacturing a semiconductor device according to an embodiment of the present application includes the following operations:

[0105] Step 1: Figure 2 As shown, a first substrate 1 is provided. The first substrate is, for example, a low-resistance (resistivity is, for example, less than or equal to 0.01Ω*cm) silicon wafer, both sides of which are polished, and the thickness is, for example, 500 microns.

[0106] Step 2: Figure 3 As shown, a first groove 11 is etched on the surface of the first substrate 1 , and the depth of the first groove is, for example, 50 microns. Then, the first substrate 1 is thermally oxidized to form a thermal oxide layer as the insulating layer 12 .

[0107] Step 3: Figure 4 As shown, the surface of the first substrate 1 is bonded to the second substrate 2 (e.g., the surface of the second substrate 2), wherein the second substrate 2 can be a low-resistance silicon wafer, and the bonding is, for example, a silicon-oxygen bond. Then, the second substrate 2 is thinned, for example, by grinding and / or etching to approximately 100 microns (i.e., the first predetermined thickness). The second substrate is, for example, a low-resistance silicon wafer (e.g., a resistivity of less than or equal to 0.01 Ω*cm).

[0108] Step 4: Figure 5 As shown, the second substrate 2 is etched to form a first through-structure 21 that penetrates the front and back surfaces of the second substrate. In a direction parallel to the surface of the second substrate, at least a portion of the first through-structure 21 corresponds to the position of the first groove 11. A movable structure 22 may be formed in at least a portion of the through-structure 21.

[0109] Step 5: Figure 6 As shown, a second groove 31 is formed on the surface of the third substrate 3, wherein at least a portion of the second groove 31 corresponds to the position of the first through-structure 21 in a direction parallel to the surface of the second substrate 2. For example, the same photomask is used to etch the first groove 11, the first through-structure 21, and the second groove 31. This reduces the number of photomasks and reduces costs. In addition, the resistivity of the third substrate 3 is less than or equal to that of the second substrate 2. For example, the third substrate 3 is a low-resistance silicon wafer (resistivity, for example, less than or equal to 0.01Ω*cm).

[0110] Step 6: Figure 7As shown, the side of the third substrate 3 having the second groove 31 is bonded to the second substrate 2. The bonding in step 6 can be performed, for example, in a normal temperature and pressure bonding machine (e.g., a temperature of 10°C to 30°C and an applied pressure of 10 Newtons to 50 kilonewtons), or in a high-temperature bonding machine. The third substrate 3 and the second substrate 2 can be bonded by silicon-silicon bonding, or a bonding material such as metal can be formed at the bonding interface.

[0111] In step 6, the third substrate 3 and the second substrate 2 are both made of silicon, and bonding the two can make the material more uniform and avoid material complexity.

[0112] like Figure 7 As shown, in step 6, the third substrate 3 may be thinned to a second predetermined thickness. For example, the third substrate 3 may be thinned to about 100 microns by grinding and / or etching, and then further thinned to about 25 microns (i.e., the second predetermined thickness) by etching.

[0113] Step 7: Figure 8 As shown, the third substrate 3 is etched to form through-structures 30 that penetrate the front and back surfaces of the third substrate 3. At least a portion of the through-structures 30 (e.g., release holes) communicate with the second recess 31. Thus, the through-structures 30 allow at least a portion of the second recess 31, the first through-structure 21, and the first recess 11 to communicate with the outside world. Furthermore, other through-structures 30 (e.g., isolation trenches) can also divide the third substrate 3 into different regions, thereby electrically isolating the different regions from each other. The critical dimension (CD) of the release holes is, for example, approximately 3 microns, and the critical dimension of the isolation trench is, for example, approximately 2 microns.

[0114] Step 8: Figure 9 As shown, an isolation layer 4 is formed on the third substrate 3, and the isolation layer 4 and the third substrate 3 together constitute a cover structure. The isolation layer 4 is formed of, for example, an insulating material, specifically, silicon oxide.

[0115] like Figure 9 As shown, the isolation layer 4 and the third substrate 3 can be further etched to form a second through structure 32. At least a portion of the second through structure 32 corresponds to the position of the second groove 31, so that the second through structure 32 can form a release hole.

[0116] In addition, the isolation layer 4 has a through-hole structure 41 , and the surface of the third substrate 3 is exposed from the bottom of the through-hole structure 41 . The through-hole structure 41 can be staggered with the position of the first through-structure 21 , thereby facilitating the subsequent contact of the electrode material with the third substrate 3 .

[0117] Step 9: Figure 10As shown, in an epitaxial growth machine, polysilicon (i.e., a first thin film layer) 5 is grown on the surface of an isolation layer 4 in a first pressure environment. The first pressure is 10 to 100 mTorr. The thickness of the epitaxial polysilicon can exceed 5 microns, for example. Chemical mechanical polishing (CMP) is then used to smooth the surface of the polysilicon 5.

[0118] Step 10: Figure 11 As shown, the polysilicon 5 is etched to remove the polysilicon on the surface and inside of the through-hole structure 41 to form a third through-structure 51 , thereby exposing the third substrate 3 .

[0119] Step 11: Figure 12 As shown, an electrode material is deposited within the third through-structure 51 to form an electrode 6, which contacts the third substrate 3. The electrode material is, for example, copper, aluminum, or other conductive materials. Step 11 may include, for example, the following sub-steps: depositing (e.g., using chemical vapor deposition (PVD) or other methods) to form an electroplating seed layer; covering the electroplating seed layer with a patterned photoresist; performing electroplating to form an electrode material having a predetermined thickness (e.g., 3 microns); removing the photoresist; and etching the electroplating seed layer to retain the electrode 6.

[0120] The manufacturing method of the semiconductor device of the present application can obtain Figure 12 The semiconductor device shown. The semiconductor device includes:

[0121] A first substrate 1 having a first groove 11 formed on its surface;

[0122] a second substrate 2 bonded to the surface of the first substrate 1, wherein the second substrate 2 is formed with a first through structure 21 penetrating the surface and back surface of the second substrate 2, wherein at least a portion of the first through structure 11 is located corresponding to a position of the first groove 11 in a direction parallel to the surface of the second substrate;

[0123] A cover structure comprising a third substrate 3, the third substrate 3 being bonded to the second substrate 2, a second groove 31 being formed on a surface of the third substrate 3, at least a portion of the first through-structure 21 being located parallel to the surface of the second substrate, and a second through-structure 32 being formed in the cover structure, the second through-structure 32 being filled with the first thin film layer 5; and

[0124] A first thin film layer 5 is formed on the surface of the cover structure, and the first thin film layer 5 blocks the second through-structure 32. In addition, the first thin film layer 5 has a third through-structure 51. The position of the third through-structure 51 is staggered with that of the second through-structure 32, and the surface of the third substrate 3 or the surface of the second substrate 2 is exposed from the third through-structure 51.

[0125] At least part of the first through structure 21 is connected with at least part of the first groove 11 and at least part of the second groove 31 to form a connecting structure, and the first air pressure in the connecting structure is lower than the standard atmospheric pressure.

[0126] like Figure 12 As shown, the semiconductor device further includes:

[0127] The electrode 6 is formed in the third through structure 51 , and the electrode 6 is in contact with the second substrate 2 or the third substrate 3 .

[0128] According to the above description, the manufacturing method of the semiconductor device of the present application has the advantages of strong versatility, simple process, and high reliability of the prepared device.

[0129] The present application has been described above in conjunction with specific embodiments. However, those skilled in the art should understand that these descriptions are merely illustrative and are not intended to limit the scope of protection of the present application. Those skilled in the art may make various modifications and variations to the present application based on the spirit and principles of the present application, and such modifications and variations are also within the scope of the present application.

Claims

1. A method for manufacturing a semiconductor device, characterized in that: The method comprises: bonding a surface of a first substrate to a second substrate, wherein a first groove is formed on the surface of the first substrate; Etching the second substrate to form a first through-structure in the second substrate that penetrates the front and back surfaces of the second substrate, wherein positions of at least a portion of the first through-structure correspond to positions of the first groove in a direction parallel to the surface of the second substrate; Bonding the third substrate to the second substrate, wherein a second groove is formed on a surface of the third substrate, and in a direction parallel to the surface of the second substrate, positions of at least part of the first through structures correspond to positions of the second groove; Etching a cover structure formed based on the third substrate to form a second through-structure in the cover structure, wherein at least a portion of the second through-structure corresponds to a position of the second groove in a direction parallel to a surface of the second substrate; and In an environment with a first air pressure, a first thin film layer is deposited on the surface of the cover structure, the first thin film layer blocks the second through-structure, and the first thin film layer has a third through-structure, the third through-structure is staggered from the second through-structure, the surface of the third substrate or the surface of the second substrate is exposed from the third through-structure, and the first air pressure is lower than the standard atmospheric pressure.

2. The method according to claim 1, wherein The material of the first substrate is silicon; and / or The material of the second substrate is silicon; and / or The material of the third substrate is silicon.

3. The method according to claim 1, wherein The resistivity of the third substrate is higher than that of the second substrate, The cover structure is the third substrate, A surface of the second substrate is exposed from a bottom of the third through structure.

4. The method according to claim 1, wherein The resistivity of the third substrate is less than or equal to the resistivity of the second substrate, The cover structure includes the third substrate and an isolation layer formed on the surface of the third substrate. A surface of the third substrate is exposed from a bottom of the third through structure.

5. The method according to claim 4, wherein A second penetrating structure is formed in the cover plate structure, comprising: forming a through structure in the third substrate, wherein at least a portion of the through structure is in communication with the second groove; forming the isolation layer on the surface of the third substrate to form a cover structure including the third substrate and the isolation layer; and The isolation layer and the third substrate are etched to form the second through structure.

6. The method according to claim 5, wherein The isolation layer also has a through-hole structure. A surface of the third substrate is exposed from the bottom of the through-hole structure.

7. The method according to claim 1, wherein The method further comprises: forming an insulating layer on a surface of the first substrate; The surface of the first substrate is bonded to the second substrate through the insulating layer.

8. The method according to claim 1, wherein The method further comprises: An electrode is formed in the third through-structure, and the electrode is in contact with the second substrate or the third substrate.

9. A semiconductor device, characterized in that: The semiconductor device comprises: A first substrate having a first groove formed on its surface; a second substrate bonded to a surface of the first substrate, wherein a first through-structure is formed in the second substrate and penetrates the front and back surfaces of the second substrate, and in a direction parallel to the surface of the second substrate, positions of at least a portion of the first through-structure correspond to positions of the first grooves; a cover structure comprising a third substrate, the third substrate being bonded to the second substrate, a second groove being formed on a surface of the third substrate, at least a portion of the first through-structures corresponding to a position of the second groove in a direction parallel to the surface of the second substrate, and a second through-structure being formed in the cover structure, at least a portion of the second through-structure corresponding to a position of the second groove in a direction parallel to the surface of the second substrate; and A first film layer is formed on the surface of the cover structure, the first film layer blocks the second through-structure, and the first film layer has a third through-structure, the third through-structure is offset from the second through-structure, and the surface of the third substrate or the surface of the second substrate is exposed from the third through-structure, At least part of the first through structure is connected with at least part of the first groove and at least part of the second groove to form a connecting structure, and the first air pressure in the connecting structure is lower than the standard atmospheric pressure.

10. The semiconductor device according to claim 9, wherein The semiconductor device further includes: An electrode is formed in the third through structure, and the electrode is in contact with the second substrate or the third substrate.

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