Semiconductor device

Abstract

Embodiments provide a semiconductor device capable of suppressing peeling of a resin portion from a terminal. According to one embodiment, a semiconductor device includes a semiconductor element. And a terminal having a first surface connected to the semiconductor element and at least a portion of which is made of copper. The semiconductor element has a resin portion covering a portion of the terminal and the semiconductor element. A functional film having an organic film containing oxygen atoms is formed on at least a part of a portion of the first surface covered by the resin portion. The organic film is bonded to the resin part.

Description

[0001] Reference to related applications

[0002] This application claims the benefit of priority based on Japanese Patent Application No. 2024-040280 (filing date: March 14, 2024), the entire contents of which are incorporated herein by reference. Technical Field

[0003] Embodiments of the present invention relate to a semiconductor device. Background Art

[0004] Semiconductor devices have been proposed that seal terminals such as lead frames and wires with a sealing resin to prevent them from coming into contact with the outside air. However, when terminals are made of metal materials such as copper, there is a concern that maintaining close contact between the terminals and the sealing resin may be difficult, leading to the sealing resin peeling off the terminals. If the sealing resin peels off the terminals and the terminals come into contact with the outside air, the terminals may degrade due to corrosion, for example, and this could reduce the reliability of the semiconductor device. Summary of the Invention

[0005] An object of the present invention is to provide a semiconductor device capable of suppressing separation of a resin portion from a terminal.

[0006] A semiconductor device according to an embodiment includes a semiconductor element. The device includes a terminal connected to the semiconductor element and having at least a portion of its surface formed as a first surface containing copper. The device includes a resin portion covering a portion of the terminal and the semiconductor element. A functional film including an organic film containing oxygen atoms is formed on at least a portion of the first surface covered by the resin portion. The organic film is bonded to the resin portion. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 It is a cross-sectional view showing a semiconductor device according to an embodiment.

[0008] Figure 2 This is a partially enlarged cross-sectional view showing a portion of a semiconductor device according to an embodiment.

[0009] Figure 3 This is a flowchart showing a manufacturing process of a semiconductor device according to an embodiment.

[0010] Figure 4 This is a first partially enlarged cross-sectional view showing a manufacturing process of the semiconductor device according to the embodiment.

[0011] Figure 5 This is a second partially enlarged cross-sectional view showing the manufacturing process of the semiconductor device according to the embodiment.

[0012] Figure 6 This is a third partially enlarged cross-sectional view showing the manufacturing process of the semiconductor device according to the embodiment.

[0013] Figure 7 It is a cross-sectional view showing a semiconductor device according to a first modified example of the embodiment.

[0014] Figure 8 It is a cross-sectional view showing a semiconductor device according to a second modified example of the embodiment.

[0015] Figure 9 It is a cross-sectional view showing a semiconductor device according to a third modified example of the embodiment.

[0016] Figure 10 This is a partially enlarged cross-sectional view showing a portion of a semiconductor device according to a fourth modified example of the embodiment.

[0017] Figure 11 It is a cross-sectional view showing a semiconductor device according to a fifth modification of the embodiment.

[0018] Figure 12 It is a cross-sectional view showing a semiconductor device according to a sixth modification of the embodiment. DETAILED DESCRIPTION

[0019] Hereinafter, semiconductor devices according to embodiments will be described with reference to the drawings.

[0020] The Z-axis direction shown in each drawing is the up-down direction of the semiconductor device. The side to which the arrow in the Z-axis direction points (+Z side) is the upper side of the semiconductor device. The side opposite to the side to which the arrow in the Z-axis direction points (-Z side) is the lower side of the semiconductor device. In the following description, the upper side of the semiconductor device is referred to as the "upper side", the lower side of the semiconductor device is referred to as the "lower side", and the up-down direction of the semiconductor device is referred to as the "upper-lower direction". In addition, each of "upper side", "lower side", and "upper-lower direction" is not a term indicating a relationship with the direction of gravity. In the following description, the surface facing upward among the outer surfaces of the components and layers constituting the semiconductor device is referred to as the upper surface, and the surface facing downward is referred to as the lower surface.

[0021] The first direction D1 shown in each drawing is a direction perpendicular to the vertical direction. In the following description, the side indicated by the arrow of the first direction D1 (the +D1 side) is referred to as one side of the first direction D1, and the side opposite to the side indicated by the arrow of the first direction D1 (the -D1 side) is referred to as the other side of the first direction D1.

[0022] (Implementation Method)

[0023] Figure 1 2 is a cross-sectional view showing a semiconductor device 10 according to the present embodiment. Figure 2 It is a partially enlarged cross-sectional view showing a portion of the semiconductor device 10 according to the embodiment. Figure 2shows part A in the semiconductor device 10 surrounded by a single dashed line in Figure 1 In this embodiment, the semiconductor device 10 is, for example, a semiconductor device such as a MOSFET (metal - oxide - semiconductor field - effect transistor) and an IGBT (Insulated Gate Bipolar Transistor). As Figure 1 shown, the semiconductor device 10 of this embodiment includes a semiconductor element 31, terminals 20, and a resin part 60.

[0024] The semiconductor element 31 is made of a semiconductor material. In this embodiment, as the semiconductor material constituting the semiconductor element 31, for example, silicon (Si), silicon carbide (SiC), gallium arsenide (GaAs), gallium nitride (GaN), etc. can be used, but it is not limited to these.

[0025] The terminals 20 electrically connect the semiconductor element 31 to a power source (not shown) and a driven body disposed outside the semiconductor device 10. Thus, the semiconductor element 31 is supplied with power from the power source via the terminals 20. In addition, the semiconductor element 31 can output power to the driven body via the terminals 20. In this embodiment, both ends in the first direction D1 of the terminals 20 protrude from the resin part 60. In this embodiment, the terminals 20 include a lead frame 21 and wires 25.

[0026] The lead frame 21 is a plate - shaped member extending in a direction orthogonal to the up - down direction. Both ends of the lead frame 21 in the first direction D1 protrude from the resin part 60. The lead frame 21 is made of one of copper, an alloy containing copper, and a metal material other than copper with a copper - plated surface (Japanese: 銅镀). That is, at least a part of the terminals 20 is made of one of copper, an alloy containing copper, and a metal material other than copper with a copper - plated surface. In this embodiment, the lead frame 21 is made of copper. Thus, the surface of the lead frame 21 contains copper. In this embodiment, the part of the surface of the terminals 20 that contains copper is called the first surface S1. In this embodiment, the part of the surface of the terminals 20 that does not contain copper is called the second surface S2. At least a part of the surface of the lead frame 21 is the first surface S1. In this embodiment, the entire surface of the lead frame 21 is the first surface S1. A part of the surface of the lead frame 21 may also be the second surface S2. The lead frame 21 has a first lead frame 22 and a second lead frame 23.

[0027] The first lead frame 22 and the second lead frame 23 are arranged at intervals along the first direction D1. The first lead frame 22 is arranged on the side (+D1 side) of the first direction D1 relative to the second lead frame 23. The first lead frame 22 and the second lead frame 23 are each plate - shaped members extending in a direction orthogonal to the up - down direction.

[0028] A semiconductor element 31 is fixed to the upper surface of the first leadframe 22 via a bonding material 32. Bonding material 32 may include, but is not limited to, an insulating die attach film primarily composed of a known epoxy resin, silver paste, solder, or a metal sintered material such as copper or silver. The first leadframe 22 has a first surface portion S11 and a second surface portion S12.

[0029] The first surface portion S11 is a portion of the upper surface of the first leadframe 22 that is located closer to the side (+D1 side) in the first direction D1 than the bonding material 32. The end of the first surface portion S11 in the first direction D1 is located closer to the other side (-D1 side) in the first direction D1 than the end of the first leadframe 22 in the first direction D1. The first surface portion S11 is the first surface S1. The first surface portion S11 is covered by the resin portion 60.

[0030] The second surface portion S12 includes a portion of the upper surface of the first leadframe 22 that is closer to the other side (−D1 side) in the first direction D1 than the bonding material 32, and a surface of the first leadframe 22 that faces the other side in the first direction D1. The second surface portion S12 corresponds to the first surface S1 and is covered by the resin portion 60.

[0031] The second leadframe 23 has a third surface portion S13. The third surface portion S13 includes a portion of the upper surface of the second leadframe 23 on one side in the first direction D1 (+D1 side) and a surface of the second leadframe 23 facing the first direction D1. The third surface portion S13 corresponds to the first surface S1. The third surface portion S13 is covered by the resin portion 60.

[0032] A plating layer 50 is formed on the surface of the first leadframe 22 and the surface of the second leadframe 23, on portions located outside the resin portion 60. Specifically, the plating layer 50 is formed on the surface of the leadframe 21, on portions located outside the resin portion 60. The plating layer 50 prevents the portion of the leadframe 21 surface located outside the resin portion 60 from coming into contact with the outside air. This prevents the portion of the leadframe 21 surface located outside the resin portion 60 from deteriorating due to corrosion, etc. Consequently, the reliability of the semiconductor device 10 can be improved. Metal materials such as tin and nickel can be used as the material constituting the plating layer 50, but are not limited to these.

[0033] The wire 25 connects the lead frame 21 to the semiconductor element 31. More specifically, the wire 25 connects an unillustrated electrode provided on the lead frame 21 to an unillustrated electrode provided on the semiconductor element 31. Even if no electrode is provided on the lead frame 21, the wire 25 can be connected to the lead frame 21. In this embodiment, the wire 25 is made of a metal material other than copper, an alloy containing copper, and copper plated on the surface. That is, at least a portion of the terminal 20 is made of a metal material other than copper, an alloy containing copper, and copper plated on the surface. In this embodiment, the wire 25 is made of copper. In this embodiment, the surface of the wire 25 is the first surface S1. The wire 25 includes a first wire 25a and a second wire 25b.

[0034] The first wire 25a connects the first lead frame 22 to the semiconductor element 31. Specifically, one end of the first wire 25a is connected to an electrode (not shown) provided on the semiconductor element 31, and the other end of the first wire 25a is connected to an electrode (not shown) provided on the first surface portion S11 of the first lead frame 22. The surface of the first wire 25a, i.e., the fourth surface portion S14, is made of copper. The fourth surface portion S14 corresponds to the first surface S1. The fourth surface portion S14 is covered with the resin portion 60.

[0035] The second wire 25b connects the second lead frame 23 to the semiconductor element 31. More specifically, one end of the second wire 25b is connected to an electrode (not shown) provided on the semiconductor element 31, and the other end of the second wire 25b is connected to an electrode (not shown) provided on the third surface portion S13 of the second lead frame 23. The surface of the second wire 25b, namely the fifth surface portion S15, is made of copper. The fifth surface portion S15 is the first surface S1. The fifth surface portion S15 is covered by the resin portion 60. As described above, the fourth surface portion S14 of the first wire 25a is the first surface S1. Therefore, at least a portion of the surface of the wire 25 is the first surface S1. In this embodiment, the entire surface of the wire 25 is the first surface S1. A portion of the surface of the wire 25 may also be the second surface S2. Furthermore, as described above, at least a portion of the surface of the lead frame 21 is the first surface S1. Therefore, at least a portion of the surface of the terminal 20 is the first surface S1.

[0036] In this embodiment, a functional film 40 is formed on at least a portion of the portion of the first surface S1 of the terminal 20 that is covered by the resin portion 60. More specifically, in this embodiment, the functional film 40 is formed on each of the first surface portion S11, the second surface portion S12, the third surface portion S13, the fourth surface portion S14, and the fifth surface portion S15 of the terminal 20. The outer surface of the functional film 40 is in contact with the resin portion 60. In this embodiment, the functional film 40 includes a first functional film portion 41, a second functional film portion 42, a third functional film portion 43, a fourth functional film portion 44, and a fifth functional film portion 45.

[0037] The first functional film portion 41 is formed on the first surface portion S11 of the terminal 20. The second functional film portion 42 is formed on the second surface portion S12. The third functional film portion 43 is formed on the third surface portion S13. The fourth functional film portion 44 is formed on the fourth surface portion S14. The fifth functional film portion 45 is formed on the fifth surface portion S15. Figure 2 As shown, the functional film 40 includes a copper oxide film 46 and an organic film 47. In the following description, only the configuration of the third functional film portion 43 and the fifth functional film portion 45 of the functional film 40 may be described. However, the configuration of the first functional film portion 41, the second functional film portion 42, and the fourth functional film portion 44 other than their respective shapes is the same as that of the third functional film portion 43.

[0038] The copper oxide film 46 included in the third functional film portion 43 is formed on the third surface portion S13. The copper oxide film 46 included in the fifth functional film portion 45 is formed on the fifth surface portion S15. The copper oxide film 46 is formed on the portion of the first surface S1 covered by the resin portion 60. The copper oxide film 46 is formed between the first surface S1 and the organic film 47. The copper oxide film 46 is composed of copper oxide. The copper oxide film 46 is in close contact with the first surface S1. In this embodiment, the copper oxide film 46 and the first surface S1 each contain copper, thereby improving the adhesion between the copper oxide film 46 and the first surface S1.

[0039] In this embodiment, the copper oxide film 46 is formed by oxidizing the surfaces of the terminal 20, that is, the lead frame 21, and the wire 25. That is, the copper oxide film 46 is formed by oxidizing the first surface S1 of the terminal 20. The method for forming the copper oxide film 46 is not particularly limited, and the terminal 20 can be heated or placed in a room temperature environment. In this embodiment, the thickness T1 of the copper oxide film 46 is greater than 1 nm and less than 15 nm. In addition, the functional film 40 may not have the copper oxide film 46. In this case, the functional film 40 only has the organic film 47, and the organic film 47 is formed on the first surface S1.

[0040] The organic film 47 is formed on the copper oxide film 46. The organic film 47 is an organic film containing oxygen atoms. The organic film 47 is in close contact with the copper oxide film 46. In this embodiment, the organic film 47 and the copper oxide film 46 each contain oxygen atoms, so the organic film 47 and the copper oxide film 46 are bonded via covalent bonds via the oxygen atoms. Therefore, in this embodiment, the adhesion between the organic film 47 and the copper oxide film 46 can be improved. In this embodiment, the organic film 47 is formed by immersing the terminal 20 formed with the copper oxide film 46, that is, the lead frame 21 and the wire 25 formed with the copper oxide film 46, in an aqueous solution containing an organic azole. The organic azole reacts selectively with copper, so the organic film 47 is formed only on the copper oxide film 46 and not on the surface of the material that does not contain copper. The method of forming the organic film 47 on the copper oxide film 46 may also be another method. In this embodiment, the thickness T2 of the organic film 47 is preferably greater than 10 nm and less than 200 nm. The thickness T2 of the organic film 47 is not less than 10 nm and not more than 60 nm.

[0041] like Figure 1 As shown, the resin portion 60 covers a portion of the terminal 20 and the semiconductor element 31. The resin portion 60 seals the first surface portion S11, the second surface portion S12, the third surface portion S13, the fourth surface portion S14, the fifth surface portion S15, and each of the surfaces of the semiconductor element 31 from the external air. The resin portion 60 seals the portion of the surface of the terminal 20 where the plating layer 50 is not formed from the external air. Therefore, it is possible to suppress the degradation of the portion of the surface of the terminal 20 where the plating layer 50 is not formed due to corrosion or the like. As the resin portion 60, for example, well-known epoxy resins, ultraviolet curing resins, and thermosetting resins can be used, but are not limited thereto. In the present embodiment, the resin portion 60 is made of epoxy resin. As Figure 2 As shown, a portion of the resin portion 60 is in close contact with the functional film 40 formed on the first surface S1 of the terminal 20. More specifically, a portion of the resin portion 60 is in close contact with the organic film 47. In this embodiment, the resin portion 60 and the organic film 47 are bonded via covalent bonds via carbon atoms. Thus, in this embodiment, the adhesion between the resin portion 60 and the organic film 47 can be improved. In other words, the adhesion between the resin portion 60 and the functional film 40 can be improved.

[0042] The lower end of the third functional film portion 43 is located above the lower end of the resin portion 60. In addition, the other end of the third functional film portion 43 in the first direction D1 (-D1 side) is located closer to the first direction D1 side (+D1 side) than the other end of the resin portion 60 in the first direction D1. Thus, a gap is provided between the third functional film portion 43 and the plating layer 50. Similarly, Figure 1As shown, a gap is provided between each of the first functional film portion 41 and the second functional film portion 42 and the plating layer 50. That is, a gap is provided between the functional film 40 and the plating layer 50. The end of the functional film 40 is located on the inner side of the resin portion 60 than the end of the resin portion 60. Figure 2 As shown, the distance Da between the functional film 40 and the plating layer 50 is preferably 50 μm or more. Although described in detail later, the plating layer 50 can be formed over the entire portion of the surface of the lead frame 21 that is not covered by the resin portion 60. In this embodiment, the distance Da between the functional film 40 and the plating layer 50 is 100 μm or more. In addition, the distance Da between the functional film 40 and the plating layer 50 is preferably 200 μm or less. As a result, the portion of the terminal 20 that is in direct contact with the resin portion 60 can be prevented from becoming too large, and thus the resin portion 60 can be appropriately prevented from peeling off from the terminal 20.

[0043] Figure 3 This is a flowchart illustrating the manufacturing process of the semiconductor device 10. The manufacturing process of the semiconductor device 10 in this embodiment includes a copper oxide film forming step P01, an organic film forming step P02, a resin portion forming step P03, and a plating step P04. Although not described here, the manufacturing process of the semiconductor device 10 includes other steps, such as a step of securing the semiconductor element 31 to the lead frame 21.

[0044] like Figure 4 As shown, the copper oxide film forming step P01 is a step of forming a copper oxide film 46 on the first surface S1 of the terminal 20. In this embodiment, the copper oxide film 46 is previously formed on the entire first surface S1 of the terminal 20, which is connected to the electrode (not shown) of the lead frame 21 by the wire 25. As described above, in this embodiment, the copper oxide film 46 is formed by oxidizing the first surface S1 of the terminal 20. As described above, the method of forming the copper oxide film 46 is not particularly limited, and the terminal 20 may be heated or left at room temperature.

[0045] The organic film forming step P02 is a step of forming an organic film 47 on the copper oxide film 46. As described above, in this embodiment, the terminal 20 formed with the copper oxide film 46 is immersed in an aqueous solution containing an organic substance of an azole type, so that the organic film 47 is formed on the copper oxide film 46. Thus, the functional film 40 is formed on the entire first surface S1 of the terminal 20. At this time, as described above, the copper oxide film 46 and the organic film 47 are bonded by covalent bonds via oxygen atoms. In addition, as described above, the organic substance of the azole type reacts selectively with copper, so that the organic film 47 is formed only on the copper oxide film 46 and is not formed on the surface of the material that does not contain copper. The method of forming the organic film 47 on the copper oxide film 46 may also be other methods.

[0046] like Figure 5As shown, the resin portion forming step P03 is a step of forming the resin portion 60. In this embodiment, the resin portion 60 is formed by a molding method such as transfer molding. Figure 1 As shown, after covering a portion of the lead frame 21 and the semiconductor element 31 with the resin portion 60, the resin portion 60 is heated and cured, thereby forming the resin portion 60. As described above, the resin portion 60 and the organic film 47 of the functional film 40 are bonded via a covalent bond of carbon. Figure 5 As shown, resin burrs 60 a are formed on the resin portion 60 . The resin burrs 60 a protrude from the resin portion 60 .

[0047] The plating step P04 is a step of forming a plating layer 50 made of tin on the portion of the surface of the lead frame 21 that is not covered by the resin portion 60. In the plating step P04, first, the lead frame 21 is immersed in an acidic solution such as Figure 6 As shown, the functional film 40 formed on the portion of the surface of the lead frame 21 that is not covered by the resin portion 60 is removed. At this time, the resin burr 60a is removed together with the functional film 40. In addition, the chemical liquid penetrates from the end of the resin portion 60 to the inside of the resin portion 60. In this embodiment, the chemical liquid penetrates from the end of the resin portion 60 to the inside of the resin portion 60 at a depth of more than 100 μm. Thus, the functional film 40 formed near the end of the resin portion 60 is removed, so that the end of the functional film 40 is located on the inner side of the resin portion 60 at a depth of more than 100 μm from the end of the resin portion 60. In addition, the chemical liquid is not limited to the above-mentioned chemical liquid, and may also be an alkaline chemical liquid. Thereafter, if the lead frame 21 is plated, as shown in Figure 1 as well as Figure 2 As shown, the plating layer 50 is formed on the portion of the surface of the lead frame 21 that is not covered by the resin portion 60. When the plating step P04 is completed, the manufacturing process of the semiconductor device 10 is completed.

[0048] According to this embodiment, a semiconductor device 10 includes: a semiconductor element 31; a terminal 20 connected to the semiconductor element 31 and having at least a portion of its surface formed of a first surface S1 containing copper; and a resin portion 60 covering a portion of the terminal 20 and the semiconductor element 31. A functional film 40 including an organic film 47 containing oxygen atoms is formed on at least a portion of the portion of the first surface S1 covered by the resin portion 60, and the organic film 47 is bonded to the resin portion 60. As described above, the organic film 47 and the resin portion 60 are bonded via covalent bonds via carbon atoms, thereby improving the adhesion between the functional film 40 and the resin portion 60. Consequently, the adhesion between the terminal 20 and the resin portion 60 can be improved via the functional film 40. This prevents the resin portion 60 from peeling off from the terminal 20, thereby preventing the terminal 20 from coming into contact with the outside air. Consequently, degradation of the terminal 20 due to corrosion, etc., can be prevented, thereby improving the reliability of the semiconductor device 10.

[0049] According to this embodiment, the functional film 40 includes a copper oxide film 46 made of copper oxide between the first surface S1 and the organic film 47. The copper oxide film 46 is in close contact with the first surface S1. Since the copper oxide film 46 and the first surface S1 of the terminal 20 each contain copper, the adhesion between the copper oxide film 46 and the first surface S1 is greater than the adhesion between the organic film 47 and the first surface S1. Furthermore, as described above, the copper oxide film 46 and the organic film 47 each contain oxygen atoms, so the copper oxide film 46 and the organic film 47 are bonded via covalent bonds via the oxygen atoms. This improves the adhesion between the copper oxide film 46 and the organic film 47. Thus, compared to a case where the functional film 40 does not include the copper oxide film 46, the adhesion between the terminal 20 and the resin portion 60 can be more appropriately improved via the functional film 40. This further effectively prevents the resin portion 60 from peeling off from the terminal 20, thereby further effectively preventing degradation of the terminal 20 due to corrosion, etc. As a result, the reliability of the semiconductor device 10 can be further effectively improved.

[0050] According to the present embodiment, the thickness T1 of the copper oxide film 46 is not less than 1 nm and not more than 15 nm.

[0051] When the thickness T1 of the copper oxide film 46 is less than 1 nm, the thickness T1 of the copper oxide film 46 becomes too thin. Therefore, due to the surface roughness of the terminal 20 and the variation in the thickness T1 of the copper oxide film 46, a portion of the first surface S1 of the terminal 20 may be exposed from the copper oxide film 46. In this case, a portion of the first surface S1 directly contacts the organic film 47, thereby reducing the adhesion between the terminal 20 and the functional film 40. As a result, the functional film 40 is easily peeled off from the terminal 20, and there is a risk of reducing the adhesion between the terminal 20 and the resin portion 60 through the functional film 40.

[0052] If the thickness T1 of the copper oxide film 46 is greater than 15 nm, the copper oxide film 46 becomes too thick and easily peels off from the terminal 20. This may reduce the adhesion between the terminal 20 and the resin portion 60 via the functional film 40.

[0053] In contrast, in the present embodiment, as described above, the thickness T1 of the copper oxide film 46 is not less than 1 nm and not more than 15 nm. This prevents the thickness T1 of the copper oxide film 46 from becoming too thin, thereby preventing a portion of the first surface S1 from being exposed from the copper oxide film 46. This prevents a decrease in the adhesion between the terminal 20 and the functional film 40. Furthermore, it prevents the thickness T1 of the copper oxide film 46 from becoming too thick, thereby preventing the copper oxide film 46 from peeling off from the terminal 20. This prevents a decrease in the adhesion between the terminal 20 and the resin portion 60 via the functional film 40, thereby further appropriately preventing the resin portion 60 from peeling off from the terminal 20. Consequently, the reliability of the semiconductor device 10 can be further appropriately improved.

[0054] According to the present embodiment, the thickness T2 of the organic film 47 is not less than 10 nm and not more than 200 nm.

[0055] When the thickness T2 of the organic film 47 is less than 10 nm, the thickness T2 of the organic film 47 becomes too thin, and thus the variation in the thickness T2 of the organic film 47 tends to increase. Consequently, a portion of the copper oxide film 46 may be exposed from the organic film 47. In this case, a portion of the copper oxide film 46 is in direct contact with the resin portion 60, and thus the contact area between the organic film 47 and the resin portion 60 is reduced. Consequently, the adhesion between the functional film 40 and the resin portion 60 is reduced. Consequently, the resin portion 60 is easily peeled off from the functional film 40, and there is a risk of reduced adhesion between the terminal 20 and the resin portion 60 via the functional film 40.

[0056] When the thickness T2 of the organic film 47 is larger than 200 nm, the thickness T2 of the organic film 47 becomes too thick, and thus there is a risk that the man-hours required to form the organic film 47 in the organic film forming step P02 may increase.

[0057] In contrast, in this embodiment, as described above, the thickness T2 of the organic film 47 is set to be between 10 nm and 200 nm. This prevents the thickness T2 of the organic film 47 from becoming too thin, thereby suppressing variations in the thickness T2 of the organic film 47. This prevents a portion of the copper oxide film 46 from being exposed from the organic film 47, thereby suppressing a decrease in the contact area between the organic film 47 and the resin portion 60. Consequently, a decrease in the adhesion between the functional film 40 and the resin portion 60 can be suppressed, thereby further appropriately improving the adhesion between the terminal 20 and the resin portion 60 via the functional film 40. Furthermore, the thickness T2 of the organic film 47 can be suppressed from becoming too thick, thereby suppressing an increase in the number of steps required to form the organic film 47 in the organic film forming step P02.

[0058] According to this embodiment, the thickness T2 of the organic film 47 is greater than or equal to 10 nm and less than or equal to 60 nm. This further appropriately prevents the thickness T2 of the organic film 47 from becoming too thin, thereby further appropriately preventing variations in the thickness T2 of the organic film 47. This further appropriately prevents a portion of the copper oxide film 46 from being exposed from the organic film 47, thereby further appropriately preventing a decrease in the contact area between the organic film 47 and the resin portion 60. Consequently, the adhesion between the terminal 20 and the resin portion 60 via the functional film 40 can be further appropriately improved. Furthermore, the thickness T2 of the organic film 47 can be further appropriately prevented from becoming too thick, thereby further appropriately preventing an increase in the number of steps required to form the organic film 47 in the organic film forming step P02.

[0059] According to this embodiment, at least a portion of the terminal 20 is formed from a metal material other than copper, an alloy containing copper, or copper plated on its surface. Therefore, in the copper oxide film forming step P01, a copper oxide film 46 can be formed on the first surface S1 of the terminal 20 by a simple operation of oxidizing the first surface S1 of the terminal 20. This makes it easier to form the copper oxide film 46 than when forming the copper oxide film 46 on the first surface S1 of the terminal 20 using other methods, such as physical vapor deposition and chemical vapor deposition. Consequently, in the copper oxide film forming step P01, an increase in the number of steps required to form the copper oxide film 46 can be suppressed.

[0060] According to this embodiment, the terminal 20 includes a lead frame 21 and a wire 25 connecting the lead frame 21 to the semiconductor element 31. At least a portion of the surface of the lead frame 21 and the surface of the wire 25 are each the first surface S1. Thus, a functional film 40 can be formed on the first surface S1 of the lead frame 21 and the first surface S1 of the wire 25. Therefore, the adhesion between the lead frame 21 and the wire 25 and the resin portion 60 can be improved via the functional film 40. This prevents the resin portion 60 from peeling off from the lead frame 21 and the wire 25, thereby preventing the lead frame 21 and the wire 25 from coming into contact with the outside air. Consequently, degradation of the lead frame 21 and the wire 25 due to corrosion or the like can be prevented, thereby improving the reliability of the semiconductor device 10.

[0061] According to this embodiment, the plating layer 50 is formed on the portion of the lead frame 21 surface located outside the resin portion 60, and the distance Da between the functional film 40 and the plating layer 50 is greater than 100 μm. As a result, in the plating step P04, the functional film 40 formed on the portion of the lead frame 21 surface not covered by the resin portion 60 can be removed, allowing the plating layer 50 to be formed over the entire portion of the lead frame 21 surface not covered by the resin portion 60. This further effectively prevents the lead frame 21 from coming into contact with the outside air. Consequently, deterioration of the lead frame 21 due to corrosion and the like can be further effectively prevented, thereby further effectively improving the reliability of the semiconductor device 10.

[0062] (First Modification)

[0063] Figure 7 This is a cross-sectional view of a semiconductor device 110 according to a first variation of the embodiment. In this variation, the shape of the lead frame 121 differs from the shape of the lead frame 21 of the aforementioned embodiment. In the following description, components identical to those of the aforementioned embodiment are denoted by the same reference numerals, and their descriptions are omitted. The semiconductor device 110 according to this variation includes a semiconductor element 31, a terminal 120, and a resin portion 160.

[0064] Terminal 120 electrically connects semiconductor element 31 to a power source and a driven object (not shown) disposed outside semiconductor device 110. In this modification, both ends of terminal 120 in first direction D1 protrude from resin portion 160. In this modification, terminal 120 includes lead frame 121 and wire 25.

[0065] Both ends of the lead frame 121 in the first direction D1 protrude from the resin portion 160. In this variation, the lead frame 121 is made of copper. At least a portion of the surface of the lead frame 121 is the first surface S1. In this variation, the entire surface of the lead frame 121 is the first surface S1. The lead frame 121 includes a first lead frame 122 and a second lead frame 123. The first lead frame 122 and the second lead frame 123 are arranged at a distance from each other along the first direction D1. The first lead frame 122 is arranged on the side (+D1 side) closer to the first direction D1 than the second lead frame 123.

[0066] The first leadframe 122 includes a first portion 122a, a second portion 122b, and a third portion 122c. The first portion 122a is plate-shaped and extends in a direction perpendicular to the vertical direction. The semiconductor element 31 is fixed to the upper surface of the first portion 122a via bonding material 32. A portion of the first portion 122a is located inside the resin portion 160. The end of the first portion 122a on one side in the first direction D1 (the +D1 side) protrudes outside the resin portion 160. The second portion 122b is plate-shaped and positioned downward as it extends toward the first direction D1. The end of the second portion 122b on the other side in the first direction D1 (the -D1 side) is connected to the end of the first portion 122a on one side in the first direction D1. The third portion 122c is plate-shaped and extends in a direction perpendicular to the vertical direction. The end of the third portion 122c on the other side in the first direction D1 is connected to the end of the second portion 122b on one side in the first direction D1. The second portion 122b and the third portion 122c are located outside the resin portion 160. The first lead frame 122 has a first surface portion S111 and a second surface portion S112.

[0067] The first surface portion S111 is a portion of the upper surface of the first portion 122a that is located closer to the bonding material 32 in the first direction D1 (the +D1 side). The end of the first surface portion S111 in the first direction D1 is located closer to the other side of the first direction D1 (the −D1 side) than the end of the first portion 122a in the first direction D1. The first surface portion S111 is the first surface S1. The first surface portion S111 is covered by the resin portion 160.

[0068] The second surface portion S112 includes a portion of the upper surface of the first portion 122a that is closer to the other side (−D1) of the bonding material 32 in the first direction D1, a surface of the first portion 122a that faces the other side in the first direction D1, and the lower surface of the first portion 122a. The second surface portion S112 corresponds to the first surface S1. The second surface portion S112 is covered by the resin portion 160.

[0069] The second leadframe 123 includes a fourth portion 123a, a fifth portion 123b, and a sixth portion 123c. The fourth portion 123a is plate-shaped and extends in a direction perpendicular to its vertical direction. A portion of the fourth portion 123a is located within the resin portion 160. The end of the fourth portion 123a on the other side (-D1 side) in the first direction D1 protrudes toward the outside of the resin portion 160. The fifth portion 123b is plate-shaped and positioned downward as it moves toward the other side in the first direction D1. The end of the fifth portion 123b on one side (+D1 side) in the first direction D1 is connected to the end of the fourth portion 123a on the other side in the first direction D1. The sixth portion 123c is plate-shaped and extends in a direction perpendicular to the vertical direction. The end of the sixth portion 123c on one side in the first direction D1 is connected to the end of the fifth portion 123b on the other side in the first direction D1. The fifth and sixth portions 123b and 123c are located outside the resin portion 160. The second lead frame 123 has a third surface portion S113 .

[0070] The third surface portion S113 includes a portion of the upper surface of the fourth portion 123a on one side (+D1 side) in the first direction D1, a surface of the fourth portion 123a facing the first direction D1, and a lower surface of the fourth portion 123a. The third surface portion S113 corresponds to the first surface S1. The third surface portion S113 is covered by the resin portion 160. A plating layer 150 is formed on a portion of the surface of the lead frame 121 located outside the resin portion 160. The other configurations of the terminal 120 of this modified example are the same as those of the terminal 20 of the aforementioned embodiment.

[0071] In this variation, a functional film 140 is formed on at least a portion of the portion of the first surface S1 of the terminal 120 that is covered by the resin portion 160. In this variation, the functional film 140 is formed on each of the first surface portion S111, the second surface portion S112, the third surface portion S113, the fourth surface portion S14, and the fifth surface portion S15. The outer surface of the functional film 140 is in contact with the resin portion 160. In this variation, the functional film 140 includes a first functional film portion 141, a second functional film portion 142, a third functional film portion 143, a fourth functional film portion 44, and a fifth functional film portion 45.

[0072] The first functional film portion 141 is formed on the first surface portion S111. The second functional film portion 142 is formed on the second surface portion S112. The third functional film portion 143 is formed on the third surface portion S113. The fourth functional film portion 44 is formed on the fourth surface portion S14. The fifth functional film portion 45 is formed on the fifth surface portion S15. Like the functional film 40 of the above-mentioned embodiment, the functional film 140 has a copper oxide film 46 and an organic film 47. The copper oxide film 46 is formed on the portion of the first surface S1 covered by the resin portion 160. The copper oxide film 46 is in close contact with the first surface S1. The organic film 47 is formed on the copper oxide film 46. The organic film 47 is an organic film containing oxygen atoms. The organic film 47 is in close contact with the copper oxide film 46. Other configurations of the functional film 140 of this modified example are the same as those of the functional film 40 of the above-mentioned embodiment.

[0073] The resin portion 160 covers a portion of the terminal 120 and the semiconductor element 31. The resin portion 160 seals the surfaces of the first surface portion S111, the second surface portion S112, the third surface portion S113, the fourth surface portion S14, the fifth surface portion S15, and the semiconductor element 31 from the external air. Thus, it is possible to suppress degradation of the portion of the surface of the terminal 120 where the plating layer 50 is not formed due to corrosion or the like. A portion of the resin portion 160 is in close contact with the functional film 140 formed on the first surface S1 of the terminal 120. More specifically, a portion of the resin portion 160 is in close contact with the organic film 47. In this modification, the resin portion 160 and the organic film 47 are bonded via covalent bonds via carbon atoms. Other configurations of the resin portion 160 of this modification are the same as those of the resin portion 60 of the above-described embodiment.

[0074] According to this variation, a functional film 140 including an organic film 47 containing oxygen atoms is formed on at least a portion of the portion of the first surface S1 of the terminal 120 covered by the resin portion 160, and the organic film 47 is bonded to the resin portion 160. Thus, as in the aforementioned embodiment, the organic film 47 and the resin portion 60 are bonded via covalent bonds via carbon atoms, thereby improving the adhesion between the functional film 140 and the resin portion 160. Consequently, the adhesion between the terminal 120 and the resin portion 160 can be improved via the functional film 140, thereby preventing the resin portion 160 from peeling off from the terminal 120. Consequently, degradation of the terminal 120 due to corrosion or the like can be prevented, thereby improving the reliability of the semiconductor device 110.

[0075] According to this variation, the functional film 140 includes a copper oxide film 46 made of copper oxide between the first surface S1 and the organic film 47. The copper oxide film 46 is in close contact with the first surface S1. Therefore, as in the above-described embodiment, the adhesion between the terminal 120 and the resin portion 160 can be further appropriately improved via the functional film 140. Consequently, peeling of the resin portion 160 from the terminal 120 can be further appropriately suppressed.

[0076] (Second Modification)

[0077] Figure 8 This is a cross-sectional view of a semiconductor device 210 according to a second variation of the embodiment. In this variation, the shape of the lead frame 221 differs from that of the lead frame 21 of the aforementioned embodiment. In the following description, components identical to those of the aforementioned embodiment are denoted by the same reference numerals, and their descriptions are omitted. The semiconductor device 210 according to this variation includes a semiconductor element 31, a terminal 220, and a resin portion 260.

[0078] The terminal 220 electrically connects the semiconductor element 31 to a power source and a driven object (not shown) disposed outside the semiconductor device 210. In this modification, the terminal 220 includes a lead frame 221 and a wire 25.

[0079] In the first direction D1, the two ends of the lead frame 221 in the first direction D1 are approximately the same as the two ends of the resin portion 260 in the first direction D1. In this variation, the lead frame 221 is made of copper. At least a portion of the surface of the lead frame 221 is the first surface S1. In this variation, the entire surface of the lead frame 221 is the first surface S1. The lead frame 221 includes a first lead frame 222 and a second lead frame 223. The first lead frame 222 and the second lead frame 223 are arranged at intervals along the first direction D1. The first lead frame 222 is arranged on the side (+D1 side) closer to the first direction D1 than the second lead frame 223.

[0080] The first lead frame 222 is in the shape of a plate extending in a direction perpendicular to the vertical direction. A semiconductor element 31 is fixed to the upper surface of the first lead frame 222 via a bonding material 32. The first lead frame 222 has a first surface portion S211 and a second surface portion S12.

[0081] The first surface portion S211 is a portion of the upper surface of the first lead frame 222 that is closer to the first direction D1 side (+ D1 side) than the bonding material 32 . The first surface portion S211 is the first surface S1 and is covered with the resin portion 260 .

[0082] The second lead frame 223 has a plate shape extending in a direction perpendicular to the vertical direction and has a third surface portion S213 .

[0083] The third surface portion S213 includes the upper surface of the second lead frame 223 and the surface of the second lead frame 223 facing the first direction D1. The third surface portion S213 corresponds to the first surface S1. The third surface portion S213 is covered by the resin portion 260. A plating layer 250 is formed on the surface of the lead frame 221 outside the resin portion 260. The other configurations of the terminal 220 of this variation are the same as those of the terminal 20 of the aforementioned embodiment.

[0084] In this variation, a functional film 240 is formed on at least a portion of the portion of the first surface S1 of the terminal 220 that is covered by the resin portion 260. In this variation, the functional film 240 is formed on each of the first surface portion S211, the second surface portion S12, the third surface portion S213, the fourth surface portion S14, and the fifth surface portion S15. The outer surface of the functional film 240 is in contact with the resin portion 260. In this variation, the functional film 240 includes a first functional film portion 241, a second functional film portion 42, a third functional film portion 243, a fourth functional film portion 44, and a fifth functional film portion 45.

[0085] The first functional film portion 241 is formed on the first surface portion S211. The second functional film portion 42 is formed on the second surface portion S12. The third functional film portion 243 is formed on the third surface portion S213. The fourth functional film portion 44 is formed on the fourth surface portion S14. The fifth functional film portion 45 is formed on the fifth surface portion S15. Like the functional film 40 of the above-mentioned embodiment, the functional film 240 has a copper oxide film 46 and an organic film 47. The copper oxide film 46 is formed on the portion of the first surface S1 covered by the resin portion 260. The copper oxide film 46 is in close contact with the first surface S1. The organic film 47 is formed on the copper oxide film 46. The organic film 47 is an organic film containing oxygen atoms. The organic film 47 is in close contact with the copper oxide film 46. Other configurations of the functional film 240 of this modified example are the same as those of the functional film 40 of the above-mentioned embodiment.

[0086] The resin portion 260 covers a portion of the terminal 220 and the semiconductor element 31. The resin portion 260 seals the first surface portion S211, the second surface portion S12, the third surface portion S213, the fourth surface portion S14, the fifth surface portion S15, and the surface of the semiconductor element 31 from the external air. A portion of the resin portion 260 is in close contact with the functional film 240 formed on the first surface S1 of the terminal 220. More specifically, a portion of the resin portion 260 is in close contact with the organic film 47. In this modification, the resin portion 260 and the organic film 47 are bonded via covalent bonds via carbon atoms. The other configurations of the resin portion 260 of this modification are the same as those of the resin portion 60 of the above-described embodiment.

[0087] According to this variation, a functional film 240 including an organic film 47 containing oxygen atoms is formed on at least a portion of the portion of the first surface S1 of the terminal 220 covered by the resin portion 260, and the organic film 47 is bonded to the resin portion 260. Thus, as in the aforementioned embodiment, the organic film 47 and the resin portion 260 are bonded via covalent bonds via carbon atoms, thereby improving the adhesion between the functional film 240 and the resin portion 260. Therefore, the adhesion between the terminal 220 and the resin portion 260 can be improved via the functional film 240, thereby preventing the resin portion 260 from peeling off from the terminal 220.

[0088] According to this variation, the functional film 240 includes a copper oxide film 46 made of copper oxide between the first surface S1 and the organic film 47. The copper oxide film 46 is in close contact with the first surface S1. Therefore, as in the above-described embodiment, the adhesion between the terminal 220 and the resin portion 260 can be further appropriately improved via the functional film 240. Consequently, peeling of the resin portion 260 from the terminal 220 can be further appropriately suppressed.

[0089] (Third Modification)

[0090] Figure 9 This is a cross-sectional view of a semiconductor device 310 according to a third variation of the embodiment. In this variation, the material of the wire 325 is gold. In the following description, components identical to those in the above-described embodiment are denoted by the same reference numerals, and their descriptions are omitted. This variation includes a semiconductor element 31, a terminal 320, and a resin portion 60.

[0091] The terminal 320 electrically connects the semiconductor element 31 to a power source and a driven object (not shown) disposed outside the semiconductor device 310. In this modification, the terminal 320 includes the lead frame 21 and a wire 325.

[0092] Wire 325 connects lead frame 21 to semiconductor element 31. More specifically, wire 325 connects an unillustrated electrode provided on lead frame 21 to an unillustrated electrode provided on semiconductor element 31. As a material constituting wire 325, metals such as gold and silver can be used, but are not limited thereto. In this modified example, wire 325 is made of gold. Therefore, the surface of wire 325 is a second surface S2 that does not contain copper. In addition, as in the above-mentioned embodiment, the surface of lead frame 21 is a first surface S1. Therefore, at least a portion of the surface of terminal 320 is the first surface S1. Wire 325 includes a first wire 325a and a second wire 325b.

[0093] The first wire 325a connects the first lead frame 22 to the semiconductor element 31. One end of the first wire 325a is connected to an electrode (not shown) provided on the semiconductor element 31, and the other end of the first wire 325a is connected to an electrode (not shown) provided on the first surface portion S11 of the first lead frame 22. In this variation, the surface of the first wire 325a, i.e., the fourth surface portion S321, is the second surface S2 that does not contain copper. The fourth surface portion S321 is covered by the resin portion 60.

[0094] The second wire 325b connects the second lead frame 23 to the semiconductor element 31. More specifically, one end of the second wire 325b is connected to an electrode (not shown) provided on the semiconductor element 31, and the other end of the second wire 325b is connected to an electrode (not shown) provided on the third surface portion S13 of the second lead frame 23. In this variation, the surface of the second wire 325b, namely the fifth surface portion S322, is the second surface S2 that does not contain copper. The fifth surface portion S322 is covered by the resin portion 60. The remaining configuration of the terminal 320 of this variation is the same as that of the terminal 20 of the aforementioned embodiment.

[0095] In the manufacturing process of the semiconductor device 310 of this variation, similar to the manufacturing process of the semiconductor device 10 of the aforementioned embodiment, the copper oxide film forming step P01 and the organic film forming step P02 are previously performed on the terminal 320 connected to the electrode (not shown) of the lead frame 21, thereby forming a functional film 340 on the first surface S1 of the lead frame 21. In this case, in the organic film forming step P02, the terminal 320 is immersed in an aqueous solution containing an organic substance of an azole type to form an organic film 47. As described above, the organic substance of the azole type reacts selectively with copper, so that the organic film 47 is formed only on the copper oxide film 46 and not on the fourth surface portion S321 and the fifth surface portion S322 of the wire 325 that do not contain copper. Therefore, in this variation, the functional film 340 is formed on at least a portion of the first surface S1 of the terminal 320 that is covered by the resin portion 60. In this variation, a functional film 340 is formed on each of the first surface portion S11, the second surface portion S12, and the third surface portion S13 of the lead frame 21. On the other hand, in this variation, no functional film 340 is formed on each of the fourth surface portion S321 and the fifth surface portion S322 of the wire 325. In other words, no functional film 340 is formed on the second surface S2 of the terminal 320. The outer surface of the functional film 340 contacts the resin portion 60. In this variation, the functional film 340 includes a first functional film portion 41, a second functional film portion 42, and a third functional film portion 43.

[0096] The first functional film portion 41 is formed on the first surface portion S11. The second functional film portion 42 is formed on the second surface portion S12. The third functional film portion 43 is formed on the third surface portion S13. Although not shown in the figure, the functional film 340 includes a copper oxide film 46 and an organic film 47, similar to the functional film 40 of the above-described embodiment. The other structures of the functional film 340 of this modified example are similar to those of the functional film 40 of the above-described embodiment.

[0097] The resin portion 60 covers a portion of the terminal 320 and the semiconductor element 31. The resin portion 60 seals the first surface portion S11, the second surface portion S12, the third surface portion S13, the fourth surface portion S321, the fifth surface portion S322, and the surface of the semiconductor element 31 from the external air. A portion of the resin portion 60 is in close contact with the functional film 340 formed on the first surface S1 of the lead frame 21. More specifically, a portion of the resin portion 60 is in close contact with the organic film 47. In this variation, the resin portion 60 and the organic film 47 are bonded via covalent bonds via carbon atoms.

[0098] According to this variation, terminal 320 includes leadframe 21 and wire 325 connecting leadframe 21 to semiconductor element 31. The surface of leadframe 21 is first surface S1, while the surface of wire 325 is second surface S2, which does not contain copper. Functional film 340 is not formed on second surface S2. This allows functional film 340 to be formed on the surface of leadframe 21, thereby improving the adhesion between leadframe 21 and resin portion 60 via functional film 340. This prevents the resin portion 60 from peeling off from leadframe 21. Consequently, the reliability of semiconductor device 310 can be improved.

[0099] In this modification, noble metals such as gold and silver are used as the material constituting wire 325. This prevents wire 325 from deteriorating due to corrosion, etc., even if resin portion 60 peels from wire 325. Consequently, the reliability of semiconductor device 310 can be improved.

[0100] (Fourth Modification)

[0101] Figure 10 This is a partially enlarged cross-sectional view of a semiconductor device 410 according to a fourth variation of the embodiment. In this variation, the terminal 420 includes an electrode portion 426. In the following description, components identical to those in the above-described embodiment are denoted by the same reference numerals, and their descriptions are omitted. The semiconductor device 410 according to this variation includes a semiconductor element 31, a terminal 420, and a resin portion 60.

[0102] The terminal 420 electrically connects the semiconductor element 31 to a power source and a driven object (not shown) disposed outside the semiconductor device 410. In this modification, the terminal 420 includes the lead frame 21, the wire 25, and the electrode portion 426.

[0103] The electrode portion 426 is formed on the surface of the lead frame 21. More specifically, the electrode portion 426 is formed on the upper surface of the second lead frame 23. The electrode portion 426 is formed on the third surface portion S13. As a material constituting the electrode portion 426, metals such as gold and silver can be used, but are not limited thereto. In this modified example, the electrode portion 426 is made of silver. Therefore, the surface of the electrode portion 426 is the second surface S2 that does not contain copper. The electrode portion 426 is formed by plating the second lead frame 23. The other end of the second wire 25b is connected to the sixth surface portion S423, which is the surface facing upward on the surface of the electrode portion 426. The sixth surface portion S423 is the second surface S2. In addition, as in the above-mentioned embodiment, the surface of the lead frame 21 is the first surface S1. Therefore, at least a portion of the surface of the terminal 420 is the first surface S1. The other structures of the terminal 420 in this modified example are the same as the other structures of the terminal 20 in the above-mentioned embodiment.

[0104] Although not shown in the figure, in this modified example, the electrode portions 426 may be formed on the first surface portion S11 of the first lead frame 22 (see FIG. Figure 1 ) and semiconductor element 31 (refer to Figure 1 ) on the upper surface. In this case, the first line 25a (refer to Figure 1 ) and one end of the second wire 25b are connected to the electrode portion 426 formed on the upper surface of the semiconductor element 31, and the other end of the first wire 25a is connected to the electrode portion 426 formed on the first surface portion S11.

[0105] In this modification, a functional film 440 is formed on at least a portion of the portion of the first surface S1 of the terminal 420 that is covered by the resin portion 60. In this modification, a first surface portion S11 (see FIG. 1 ) of the lead frame 21 is provided with a functional film 440. Figure 1 ), the second surface portion S12 (refer to Figure 1 ) and each of the third surface portion S13 is formed with a functional film 440. In this modification, the fourth surface portion S14 (see Figure 1 ), the functional film 440 is not formed on each of the fifth surface portions S15. Moreover, in this modification, the functional film 440 is not formed on the sixth surface portion S423 of the electrode portion 426. That is, the functional film 440 is not formed on the second surface S2 of the terminal 420. The outer surface of the functional film 440 is in contact with the resin portion 60. In this modification, the functional film 440 includes the first functional film portion 41 (refer to Figure 1 )、the second functional film portion 42 (refer to Figure 1 ) and the third functional membrane portion 443.

[0106] The first functional film portion 41 is formed on the first surface portion S11 (see Figure 1 The second functional film portion 42 is formed on the second surface portion S12 (refer to Figure 1 The third functional film portion 443 is formed on the third surface portion S13 excluding the portion where the electrode portion 426 is formed. The functional film 440 includes a copper oxide film 46 and an organic film 47. The other configurations of the functional film 440 of this modification are the same as those of the functional film 40 of the above-described embodiment.

[0107] The resin portion 60 covers a portion of the terminal 420 and the semiconductor element 31. The resin portion 60 seals the first surface portion S11, the second surface portion S12, the third surface portion S13, the fourth surface portion S14, the fifth surface portion S15, the sixth surface portion S423, and the surface of the semiconductor element 31 from the external air. A portion of the resin portion 60 is in close contact with the functional film 440 formed on the first surface S1 of the terminal 420. More specifically, a portion of the resin portion 60 is in close contact with the organic film 47. In this modified example, the resin portion 60 and the organic film 47 are bonded via covalent bonds via carbon atoms.

[0108] In the manufacturing process of the semiconductor device 410 of this modified example, the copper oxide film forming step P01 and the organic film forming step P02 are performed on the lead frame 21 having the electrode portion 426 formed thereon, thereby forming a functional film 440 on the first surface S1 of the lead frame 21. In this case, in the organic film forming step P02, the lead frame 21 having the electrode portion 426 formed thereon is immersed in an aqueous solution containing an organic substance of an azole type, thereby forming an organic film 47. As described above, the organic substance of the azole type reacts selectively with copper, so that the organic film 47 is formed only on the copper oxide film 46 and not on the sixth surface portion S423 of the electrode portion 426 that does not contain copper. Therefore, in the process after the organic film forming step P02, when connecting the wire 25 to the electrode portion 426, the wire 25 can be directly connected to the electrode portion 426 without removing the insulating functional film 40 from the sixth surface portion S423.

[0109] In the manufacturing process of the semiconductor device 410 of this modification, the wire 25 may be connected to the electrode portion 426 in a process before the copper oxide film forming step P01 and the organic film forming step P02. In this case, the wire 25 and the electrode portion 426 may be directly connected.

[0110] According to this variation, the terminal 420 includes an electrode portion 426 formed on the surface of the lead frame 21. The electrode portion 426 has a second surface S2 that does not contain copper, and the functional film 440 is not formed on the second surface S2. Therefore, as described above, even if the copper oxide film forming step P01 and the organic film forming step P02 are performed on the lead frame 21 having the electrode portion 426 formed thereon, the functional film 440 is not formed on the surface of the electrode portion 426. Therefore, after the functional film 440 is formed on the lead frame 21 in the copper oxide film forming step P01 and the organic film forming step P02, even when the wire 25 is connected to the electrode portion 426, there is no need to remove the insulating functional film 440 from the surface of the electrode portion 426, and the wire 25 can be directly connected to the electrode portion 426. Therefore, it is possible to suppress the increase in the number of steps required to connect the wire 25 to the electrode portion 426.

[0111] Furthermore, in this modified example, as described above, regardless of whether the wire 25 is connected to the electrode portion 426 in a process before the copper oxide film forming step P01 and the organic film forming step P02 or in a process after the copper oxide film forming step P01 and the organic film forming step P02, the wire 25 can be directly connected to the electrode portion 426. Therefore, the degree of freedom in the manufacturing process of the semiconductor device 410 can be increased.

[0112] (Fifth Modification)

[0113] Figure 11 This is a cross-sectional view of a semiconductor device 510 according to a fifth variation of the embodiment. In this variation, the shape of the lead frame 521 differs from the shape of the lead frame 21 of the aforementioned embodiment. In the following description, components identical to those in the aforementioned embodiment are denoted by the same reference numerals, and their descriptions are omitted. The semiconductor device 510 according to this variation includes a semiconductor element 31, a terminal 520, and a resin portion 560.

[0114] The terminal 520 electrically connects the semiconductor element 31 to a power source (not shown) and a driven object that are arranged outside the semiconductor device 510. In this modification, the terminal 520 includes a lead frame 521.

[0115] Both ends of the lead frame 521 in the first direction D1 protrude from the resin portion 560. In this variation, the lead frame 521 is made of copper. At least a portion of the surface of the lead frame 521 is the first surface S1. In this variation, the entire surface of the lead frame 521 is the first surface S1. The lead frame 521 includes a first lead frame 22 and a second lead frame 523.

[0116] The second leadframe 523 includes a fourth portion 523a, a fifth portion 523b, and a sixth portion 523c. The fourth portion 523a is plate-shaped and extends in a direction perpendicular to the vertical direction. It is positioned above the semiconductor element 31 and is located within the resin portion 560. The semiconductor element 31 is secured to the lower surface of the fourth portion 523a via bonding material 533. The fifth portion 523b is plate-shaped and extends downward as it approaches the other side (-D1) of the first direction D1. The end of the fifth portion 523b on one side (+D1) of the first direction D1 is connected to the end of the fourth portion 523a on the other side of the first direction D1. The fifth portion 523b is located within the resin portion 560. The sixth portion 523c is plate-shaped and extends in a direction perpendicular to the vertical direction. The end of the sixth portion 523c on one side (-D1) of the first direction D1 is connected to the lower end of the fifth portion 523b. A portion of the sixth portion 523c is located inside the resin portion 560. An end portion of the sixth portion 523c on the other side in the first direction D1 is located outside the resin portion 560. The second lead frame 523 has a third surface portion S513 and a fourth surface portion S514.

[0117] The third surface portion S513 includes a portion of the lower surface of the fourth portion 523a that is closer to the other side (-D1) of the bonding material 533 in the first direction D1, a surface of the fifth portion 523b that faces the first direction D1 (+D1), and a surface of the sixth portion 523c that faces the first direction D1. The third surface portion S513 is the first surface S1. The third surface portion S513 is covered by the resin portion 560.

[0118] The fourth surface portion S514 includes a portion of the lower surface of the fourth portion 523a that is closer to the side of the bonding material 533 in the first direction D1 (+D1 side), a surface of the fourth portion 523a that faces the first direction D1, an upper surface of the fourth portion 523a, a surface of the fifth portion 523b that faces the other side of the first direction D1, and a portion of the upper surface of the sixth portion 523c that faces the first direction D1. The fourth surface portion S514 is the first surface S1. The fourth surface portion S514 is covered by the resin portion 560. A plating layer 550 is formed on a portion of the surface of the lead frame 521 that is located outside the resin portion 560. The other configurations of the terminal 520 of this modified example are the same as those of the terminal 20 of the aforementioned embodiment.

[0119] In this variation, a functional film 540 is formed on at least a portion of the portion of the first surface S1 of the terminal 520 that is covered by the resin portion 560. In this variation, the functional film 540 is formed on each of the first surface portion S11, the second surface portion S12, the third surface portion S513, and the fourth surface portion S514. The outer surface of the functional film 540 is in contact with the resin portion 560. In this variation, the functional film 540 includes a first functional film portion 41, a second functional film portion 42, a third functional film portion 543, and a fourth functional film portion 544.

[0120] The first functional film portion 41 is formed on the first surface portion S11. The second functional film portion 42 is formed on the second surface portion S12. The third functional film portion 543 is formed on the third surface portion S513. The fourth functional film portion 544 is formed on the fourth surface portion S514. Like the functional film 40 of the aforementioned embodiment, the functional film 540 includes a copper oxide film 46 and an organic film 47. The remaining configuration of the functional film 540 of this modified example is the same as that of the functional film 40 of the aforementioned embodiment.

[0121] The resin portion 560 covers a portion of the terminal 520 and the semiconductor element 31. The resin portion 560 seals the first surface portion S11, the second surface portion S12, the third surface portion S513, the fourth surface portion S514, and the surface of the semiconductor element 31 from the external air. A portion of the resin portion 560 is in close contact with the functional film 540 formed on the first surface S1 of the terminal 520. More specifically, a portion of the resin portion 560 is in close contact with the organic film 47. In this variation, the resin portion 560 and the organic film 47 are bonded via covalent bonds via carbon atoms.

[0122] According to this variation, a functional film 540 including an organic film 47 containing oxygen atoms is formed on at least a portion of the portion of the first surface S1 of the terminal 520 covered by the resin portion 560, and the organic film 47 is bonded to the resin portion 560. Thus, as in the aforementioned embodiment, the organic film 47 and the resin portion 560 are bonded via covalent bonds via carbon atoms, thereby improving the adhesion between the functional film 540 and the resin portion 560. Consequently, the adhesion between the terminal 520 and the resin portion 560 can be improved via the functional film 540, thereby preventing the resin portion 560 from peeling off from the terminal 520.

[0123] (Sixth Modification)

[0124] Figure 12This is a cross-sectional view of a semiconductor device 610 according to a sixth variation of the embodiment. The semiconductor device 610 of this variation includes a heat dissipation portion 628. In the following description, components identical to those of the fifth variation of the embodiment described above are denoted by the same reference numerals, and their descriptions are omitted. The semiconductor device 610 of this variation includes a semiconductor element 31, a terminal 620, and a resin portion 660. The terminal 620 includes a lead frame 521 and a heat dissipation portion 628.

[0125] The heat dissipation portion 628 is plate-shaped and wide in a direction perpendicular to the vertical direction. In this modified example, the heat dissipation portion 628 is made of copper. Therefore, the surface of the heat dissipation portion 628 is the first surface S1. The heat dissipation portion 628 is fixed to the upper surface of the fourth portion 523a. The upper surface of the heat dissipation portion 628 is located above the resin portion 660. As a result, when the semiconductor device 610 is operating, heat generated in the semiconductor element 31 is dissipated to the outside of the semiconductor device 610 via the first lead frame 22, and is also dissipated to the outside of the semiconductor device 610 via the second lead frame 523 and the heat dissipation portion 628. Therefore, compared to a configuration in which the semiconductor device 610 does not include the heat dissipation portion 628, the temperature of the semiconductor element 31 during operation of the semiconductor device 610 can be suppressed from increasing. As a result, the stability of the operation of the semiconductor device 610 can be improved, and the reliability of the semiconductor device 610 can be further appropriately improved.

[0126] In this modification, the terminal 620 has a first surface portion S11 , a second surface portion S12 , a third surface portion S513 , a fourth surface portion S614 , and a fifth surface portion S615 .

[0127] The fourth surface portion S614 includes a portion of the lower surface of the fourth portion 523a that is closer to the first direction D1 (+D1 side) than the bonding material 533, a surface of the fourth portion 523a that faces the first direction D1, a portion of the upper surface of the fourth portion 523a that is closer to the first direction D1 than the heat dissipation portion 628, and a surface of the heat dissipation portion 628 that faces the first direction D1. The fourth surface portion S614 is the first surface S1 and is covered by the resin portion 660.

[0128] The fifth surface portion S615 includes the surface of the heat dissipation portion 628 facing the other side (-D1 side) in the first direction D1, a portion of the upper surface of the fourth portion 523a that is closer to the other side of the first direction D1 than the heat dissipation portion 628, a surface of the fifth portion 523b facing the other side in the first direction D1, and a portion of the upper surface of the sixth portion 523c that is on the one side (+D1 side) in the first direction D1. The fifth surface portion S615 is the first surface S1. The fifth surface portion S615 is covered by the resin portion 660. A plating layer 650 is formed on the surface of the lead frame 521 and on the surface of the heat dissipation portion 628 outside the resin portion 660. The remaining configuration of the terminal 620 of this variation is the same as that of the terminal 520 of the fifth variation of the aforementioned embodiment.

[0129] In this variation, a functional film 640 is formed on at least a portion of the portion of the first surface S1 of the terminal 620 that is covered by the resin portion 660. In this variation, the functional film 640 is formed on each of the first surface portion S11, the second surface portion S12, the third surface portion S513, the fourth surface portion S614, and the fifth surface portion S615. The outer surface of the functional film 640 is in contact with the resin portion 660. In this variation, the functional film 640 includes a first functional film portion 41, a second functional film portion 42, a third functional film portion 543, a fourth functional film portion 644, and a fifth functional film portion 645.

[0130] The fourth functional film portion 644 is formed on the fourth surface portion S614. The fifth functional film portion 645 is formed on the fifth surface portion S615. Like the functional film 40 of the aforementioned embodiment, the functional film 640 includes a copper oxide film 46 and an organic film 47. The remaining configuration of the functional film 640 of this modification is the same as that of the functional film 540 of the fifth modification of the aforementioned embodiment.

[0131] The resin portion 660 covers a portion of the terminal 620 and the semiconductor element 31. The resin portion 660 seals the first surface portion S11, the second surface portion S12, the third surface portion S513, the fourth surface portion S614, the fifth surface portion S615, and the surface of the semiconductor element 31 from the external air. A portion of the resin portion 660 is in close contact with the functional film 640 formed on the first surface S1 of the terminal 620. More specifically, a portion of the resin portion 660 is in close contact with the organic film 47. In this variation, the resin portion 660 and the organic film 47 are bonded via covalent bonds via carbon atoms.

[0132] According to this variation, a functional film 640 including an organic film 47 containing oxygen atoms is formed on at least a portion of the portion of the first surface S1 of the terminal 620 covered by the resin portion 660, and the organic film 47 is bonded to the resin portion 660. Thus, as in the aforementioned embodiment, the organic film 47 and the resin portion 660 are bonded via covalent bonds via carbon atoms, thereby improving the adhesion between the functional film 640 and the resin portion 660. Consequently, the adhesion between the terminal 620 and the resin portion 660 can be improved via the functional film 640, thereby preventing the resin portion 660 from peeling off from the terminal 620.

[0133] According to at least one embodiment described above, a semiconductor device can be provided in which peeling of the resin portion from the terminal is suppressed by forming a functional film including an organic film containing oxygen atoms on at least a portion of the first surface covered with the resin portion.

[0134] While several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These embodiments can be implemented in various other ways, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included within the scope and spirit of the invention, and are also included in the invention described in the claims and their equivalents.

[0135] Description of Reference Numerals

[0136] 10, 110, 210, 310, 410, 510, 610…semiconductor device, 20, 120, 220, 320, 420, 520, 620…terminal, 21, 121, 221, 521…lead frame, 25, 325…wire, 31…semiconductor element, 40, 140, 240, 340, 440, 540, 640…functional film, 46…copper oxide film, 47…organic film, 50, 150, 250, 550, 650…plating layer, 60, 160, 260, 560, 660…resin portion, 426…electrode portion, S1…first surface, S2…second surface

Claims

1. A semiconductor device, characterized in that: have: semiconductor components; a terminal connected to the semiconductor element, at least a portion of the surface of which is a first surface comprising copper; as well as a resin portion covering a portion of the terminal and the semiconductor element, forming a functional film including an organic film containing oxygen atoms on at least a portion of the first surface covered with the resin portion, The organic film is bonded to the resin portion.

2. The semiconductor device according to claim 1, wherein The functional film includes a copper oxide film composed of copper oxide between the first surface and the organic film. The copper oxide film is in close contact with the first surface.

3. The semiconductor device according to claim 2, wherein The copper oxide film has a thickness of 1 nm to 15 nm.

4. The semiconductor device according to claim 2, wherein The thickness of the organic film is greater than or equal to 10 nm and less than or equal to 200 nm.

5. The semiconductor device according to claim 4, wherein The thickness of the organic film is greater than or equal to 10 nm and less than or equal to 60 nm.

6. The semiconductor device according to claim 1, wherein At least a portion of the terminal is made of any one of copper, an alloy containing copper, and a metal material other than copper plated on the surface.

7. The semiconductor device according to claim 1, wherein The terminal includes a lead frame and a wire connecting the lead frame and the semiconductor element. At least a portion of each of a surface of the lead frame and a surface of the wire is the first surface.

8. The semiconductor device according to claim 7, wherein The terminal includes an electrode portion formed on the surface of the lead frame, The electrode portion has a second surface that does not contain copper, The functional film is not formed on the second surface.

9. The semiconductor device according to claim 1, wherein The terminal includes a lead frame and a wire connecting the lead frame and the semiconductor element. The surface of the lead frame is the first surface, The surface of the wire is a second surface that does not contain copper, The functional film is not formed on the second surface.

10. The semiconductor device according to claim 7, wherein forming a plating layer on a portion of the surface of the lead frame located outside the resin portion, The distance between the functional film and the plating layer is greater than 100 μm.

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