Multispectral chip assembly and electronic equipment

Abstract

The invention provides a multispectral chip assembly and electronic equipment. The multispectral chip assembly comprises an image sensor and a filter layer, the image sensor is used for acquiring light rays of different wavebands to obtain spectral information of each channel, different channels correspond to the spectral information of different wavebands, the filter layer is arranged on a photosensitive path of the image sensor, and the filter layer is used for filtering the light entering the image sensor to obtain the spectral information of each channel; the filter layer is arranged on the substrate and allows light of at least four different wavebands to pass through, and the waveband range of the light capable of penetrating through the filter layer is within the waveband range of the light capable of being acquired by the image sensor. According to the multispectral chip assembly, the light filtering layer is arranged on the light sensing path of the image sensor, so that the light of the image sensor comprises at least four different wave bands, at least four spectral channels can be realized, the number of the channels is increased, and multispectral imaging is realized.

Description

Technical Field

[0001] The present application relates to the technical field of multispectral chip components, and in particular to multispectral chip components and electronic devices. Background Art

[0002] Image sensing technology is a key component of modern information acquisition and is widely used in consumer electronics, industrial inspection, security monitoring, autonomous driving, biomedical imaging, and many other fields. RGB (red, green, blue) color image sensors have become the mainstream solution in the current market due to their mature technology, manageable costs, and high integration.

[0003] Image sensors such as RGB in related technologies have a technical problem of limited number of spectral channels. Summary of the Invention

[0004] The embodiments of the present application provide a multi-spectral chip assembly and an electronic device.

[0005] In a first aspect, an embodiment of the present application provides a multispectral chip assembly, comprising:

[0006] An image sensor is used to acquire light of different wavelength bands to obtain spectral information of each channel, wherein different channels correspond to spectral information of different wavelength bands;

[0007] a filter layer, disposed on a light-sensing path of the image sensor, the filter layer being configured to filter light entering the image sensor and allow light of at least four different wavelength bands to pass through;

[0008] The wavelength range of light that can pass through the filter layer is within the wavelength range of light that can be captured by the image sensor.

[0009] In one embodiment, the wavelength width of at least a portion of the wavelength band of light that can pass through the filter layer is smaller than the wavelength width of at least one wavelength band of light that can be captured by the image sensor.

[0010] In one embodiment, the image sensor includes a filter, the filter includes at least one filter unit module, each of the filter unit modules includes an R filter unit, a G filter unit, a B filter unit and at least one extended filter unit, the R filter unit is used to allow light in a red band to pass, the G filter unit is used to allow light in a green band to pass, the B filter unit is used to allow light in a blue band to pass, and the extended filter unit is used to allow light in a specific band to pass, and any one of the red band, the green band and the blue band is different from the specific band.

[0011] In one embodiment, the expansion filter unit includes an X-ray filter unit, and the X-ray filter unit is configured to allow light of a specific wavelength band to pass through.

[0012] In one embodiment, the number of the X-ray filter units is at least two, and different X-ray filter units are used to allow light of different wavelength bands to pass through.

[0013] In one embodiment, the image sensor includes R pixels, G pixels, B pixels and at least one extended pixel, and the light band acquired by any one of the R pixels, the G pixels and the B pixels is different from the light band acquired by the extended pixel.

[0014] In one embodiment, the extended pixel points include at least one X pixel point, and the extended pixel points are used to obtain at least one of long-wave ultraviolet light, medium-wave ultraviolet light, near-infrared light, mid-infrared light, and far-infrared light.

[0015] In one embodiment, the filter layer includes at least four filter regions, each of the filter regions is configured to allow light of at least three different wavelength bands to pass through, and different filter regions are configured to allow light of different wavelength bands to pass through; or,

[0016] The filter layer includes a filter area, and the filter area is used to allow light of at least four different wavelength bands to pass through.

[0017] In one embodiment, the wavelength range of at least one band of light is within the red wavelength range, the wavelength range of at least one band of light is within the green wavelength range, the wavelength range of at least one band of light is within the blue wavelength range, and the wavelength range of at least one band of light is within the specific wavelength range.

[0018] In one embodiment, when the central wavelength of light passing through the filter layer is between 400 nm and 420 nm, the quantum efficiency of the multi-spectral chip assembly is between 38% and 40%; and / or,

[0019] When the central wavelength of light passing through the filter layer is between 450 nm and 470 nm, the quantum efficiency of the multi-spectral chip assembly is between 50% and 51%; and / or,

[0020] When the central wavelength of light passing through the filter layer is between 500 nm and 520 nm, the quantum efficiency of the multi-spectral chip assembly is between 53% and 55%; and / or,

[0021] When the central wavelength of light passing through the filter layer is between 540 nm and 560 nm, the quantum efficiency of the multi-spectral chip assembly is between 51.5% and 52.5%; and / or,

[0022] When the central wavelength of light passing through the filter layer is between 640 nm and 660 nm, the quantum efficiency of the multi-spectral chip assembly is between 40.3% and 42%; and / or,

[0023] When the central wavelength of light passing through the filter layer is between 800 nm and 820 nm, the quantum efficiency of the multi-spectral chip assembly is between 16% and 19%.

[0024] In one embodiment, the maximum transmittance of the filter layer is greater than or equal to 90%; and / or,

[0025] The cutoff rate of the filter layer is greater than or equal to 2.5; and / or,

[0026] The error tolerance of the filter layer is less than or equal to 1%.

[0027] In one embodiment, the filter layer allows light with a central wavelength between 400 nm and 420 nm to pass through, and the wavelength band width of the light with a central wavelength between 400 nm and 420 nm is between 40 nm and 43 nm; and / or,

[0028] The filter layer can allow light with a central wavelength between 450nm and 470nm to pass through, and the wavelength band width of the light with a central wavelength between 450nm and 470nm is between 31nm and 32nm; and / or,

[0029] The filter layer allows light with a central wavelength between 500nm and 520nm to pass through, and the wavelength band width of the light with a central wavelength between 500nm and 520nm is between 29nm and 31nm; and / or,

[0030] The filter layer allows light with a central wavelength between 540nm and 560nm to pass through, and the wavelength band width of the light with a central wavelength between 540nm and 560nm is between 31.5nm and 33nm; and / or,

[0031] The filter layer allows light with a central wavelength between 640nm and 660nm to pass through, and the wavelength band width of the light with a central wavelength between 640nm and 660nm is between 40.5nm and 44nm; and / or,

[0032] The filter layer allows light with a central wavelength between 800nm ​​and 820nm to pass through, and the wavelength band width of the light with a central wavelength between 800nm ​​and 820nm is between 98nm and 102nm.

[0033] In one embodiment, the image sensor is an RGB image sensor.

[0034] In one embodiment, the filter layer can allow light of multiple different bands to pass through, and the multiple different bands include a first band collection, a second band collection, and a third band collection. The band range of the first band collection is within the band range of the green channel of the RGB image sensor, the band range of the second band collection is within the band range of the green channel of the RGB image sensor, and the band range of the third band collection is within the band range of the blue channel of the RGB image sensor, wherein the first band collection, the band collection, and the third band collection each include at least one band.

[0035] In one embodiment, the filter layer allows light of n different wavelength bands to pass through, wherein the first wavelength band set, the second wavelength band set, and the third wavelength band set each include n / 3 wavelength bands.

[0036] In one embodiment, the multispectral chip assembly further includes a housing, and the image sensor and the filter layer are both encapsulated in the housing.

[0037] In one embodiment, the image sensor has a photosensitive lens, and the filter layer is connected to the photosensitive lens.

[0038] In one embodiment, the image sensor is a CSP packaged image sensor; or, the image sensor is a COB packaged image sensor.

[0039] In a second aspect, an embodiment of the present application provides an electronic device comprising the multi-spectral chip assembly as described above.

[0040] Beneficial effects of the embodiments of the present application:

[0041] In an embodiment of the present application, a filter layer is provided on the photosensitive path of the image sensor so that light passes through the filter layer before entering the image sensor. The filter layer can filter the light entering the image sensor, allowing at least four different wavelength bands of light to enter the image sensor. The wavelength range of the light that can pass through the filter layer is within the wavelength range of the light that can be obtained by the image sensor, ensuring that the image sensor can form an image normally. In other words, by providing a filter layer on the photosensitive path of the image sensor, the present application enables the light of the image sensor to include at least four different wavelength bands, thereby realizing at least four spectral channels, thereby increasing the number of channels and realizing multi-spectral imaging. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0043] Figure 1 Schematic diagram of the structure of the multi-spectral chip assembly provided in an embodiment of the present application, wherein the arrows in the figure indicate the direction of light transmission;

[0044] Figure 2 : is a simplified structural diagram of the multi-spectral chip assembly provided in an embodiment of the present application, wherein the arrows in the figure indicate the direction of light transmission;

[0045] Figure 3 is a schematic structural diagram of the optical filter provided in an embodiment of the present application;

[0046] Figure 4 This is one of the structural decomposition diagrams of the multi-spectral chip assembly provided in the embodiment of the present application. The arrows in the figure indicate the direction of light transmission;

[0047] Figure 5 This is the second schematic diagram of the structural decomposition of the multi-spectral chip assembly provided in an embodiment of the present application. The arrows in the figure indicate the direction of light transmission;

[0048] Figure 6 Schematic diagram of the structure of the filter layer provided in an embodiment of the present application;

[0049] Figure 7 is a schematic structural diagram of a multispectral chip assembly provided in an embodiment of the present application, wherein the image sensor in the figure is an RGBX image sensor;

[0050] Figure 8 This is a wavelength-quantum efficiency diagram provided by an embodiment of the present application;

[0051] Figure 9 is a parameter table provided by the embodiments of this application;

[0052] Figure 10 The embodiments of this application provide Figure 9 The corresponding spectral curve of the parameter table

[0053] Figure 11 is a wavelength-quantum efficiency curve provided by an embodiment of the present application;

[0054] Figure 12 Schematic diagram of the structure of a multi-spectral chip assembly provided by an embodiment of the present application, wherein the filter layer has four filter regions, each of which can transmit light of seven different wavelength bands;

[0055] Figure 13 This is a flow chart of a method for preparing a multi-spectral chip assembly provided in an embodiment of the present application. DETAILED DESCRIPTION

[0056] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application. In the present application, unless otherwise specified, the directional words used, such as "upper" and "lower", generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; and "inside" and "outside" refer to the outline of the device.

[0057] The following combination Figures 1 to 13 The multispectral chip assembly and electronic device of the present application are described. Figure 2 In the figure, the filter layer 2 is a 6-channel filter layer, and the image sensor 1 is an RGB image sensor. Figure 7 In the figure, the filter layer 2 is an 8-channel filter layer, and the image sensor 1 is an RGBX image sensor. Figure 8 In FIG, R, G, B and X represent four photosensitive bands of the image sensor, and CH1, CH2, CH3, CH4, CH5, CH6, CH7 and CH8 represent eight different bands that can pass through the light filter layer 2.

[0058] According to the embodiment of the first aspect of the present application, Figure 1 and Figure 2 The multispectral chip component includes an image sensor 1 and a filter layer 2. The image sensor 1 is used to obtain light of different bands to obtain spectral information of each channel, wherein different channels correspond to spectral information of different bands. The filter layer 2 is arranged on the photosensitive path of the image sensor 1. The filter layer 2 is used to filter the light entering the image sensor 1 and allow at least four different bands of light to pass through.

[0059] The wavelength range of light that can pass through the filter layer 2 is within the wavelength range of light that can be captured by the image sensor 1 .

[0060] According to the multispectral chip assembly of the embodiment of the present application, by providing a filter layer 2 on the photosensitive path of the image sensor 1, light will first pass through the filter layer 2 before entering the image sensor 1. The filter layer 2 can filter the light entering the image sensor 1, allowing at least four different wavelength bands of light to enter the image sensor 1. The wavelength range of the light that can pass through the filter layer 2 is all within the wavelength range of the light that can be obtained by the image sensor 1, ensuring that the image sensor 1 can form an image normally. In other words, by providing the filter layer 2 on the photosensitive path of the image sensor 1, the present application can realize at least four spectral channels by providing the light of the image sensor 1 including at least four different wavelength bands, thereby increasing the number of channels and realizing multispectral imaging.

[0061] It is understood that the present application directly adds a filter layer 2 to the light-sensing path of the image sensor 1, without changing the pixels of the image sensor 1. This allows for the implementation of more spectral channels without sacrificing spatial resolution. Furthermore, the image sensor 1 can utilize an existing RGB image sensor 1 or other image sensor 1, allowing for the rapid and cost-effective production of a multispectral chip assembly.

[0062] In some examples, the filter layer 2 allows light of a different wavelength bands to pass through, and the filter structure of the image sensor 1 itself allows light of b different wavelength bands to pass through, where a is greater than b.

[0063] Specifically, when b is not greater than 3, a may be greater than b. In this case, the number of spectral channels can be increased by the filter layer 2 .

[0064] Specifically, when b is greater than 3, a can be greater than or equal to b. When a=b, the image sensor 1 can already realize at least four spectral channels. Since the wavelength range of light that can pass through the filter layer 2 is within the wavelength range of light that can be captured by the image sensor 1, although the filter layer 2 cannot increase the number of spectral channels, it can limit the width of the sensitive wavelength band of the image sensor 1 to improve the photosensitivity effect.

[0065] It is understandable that the related art RGB image sensor 1 has only three spectral channels, R, G, and B, which is a relatively small number of channels. However, the present application adds a filter layer 2 to the photosensitive channel of the image sensor 1. Since the filter layer 2 allows light of at least four different wavelengths to pass through, the light entering the image sensor 1 includes at least four different wavelengths. As a result, the multispectral chip assembly of the present application has at least four spectral channels, effectively increasing the number of channels and enabling multispectral imaging.

[0066] The multi-spectral implementation scheme in the related art has the following problems: 1. Generally, each pixel point is an independent spectroscopic unit for each channel, which has a complex process, a long production cycle, a low yield rate, and a high cost; 2. When multiple channels are arranged in space, spatial resolution is sacrificed, and the spatial distance between the same channels is too long, making it difficult to realize more channels.

[0067] However, the present application can directly set a filter layer 2 on the existing image sensor 1. The filter layer 2 first filters the light entering the image sensor 1, so that the light entering the image sensor 1 includes at least four bands. The image sensor 1 can then realize at least four spectral channels, realizing multispectral imaging. In other words, the present application can obtain a multispectral chip component by setting a filter layer 2 on the photosensitive path of the image sensor 1. This has a simple process, a short production cycle, a high yield rate, and a low cost. At least some pixels can realize multiple channels, ensuring spatial resolution.

[0068] In one embodiment of the present application, the band width of at least part of the band of light that can pass through the filter layer 2 is smaller than the band width of at least one of the bands of light that can be obtained by the image sensor 1, thereby reducing the sensitive band width of the image sensor 1, which is beneficial to improving imaging accuracy.

[0069] In one embodiment of the present application, the image sensor 1 is, for example, an RGB image sensor 1. It should be noted that the image sensor 1 is merely an example and is not particularly limited here. The image sensor 1 may also be any other suitable sensor, such as an infrared sensor.

[0070] Specifically, the filter layer 2 can allow light of multiple different bands to pass through, and the multiple different bands include a first band collection, a second band collection, and a third band collection. The band range of the first band collection is within the band range of the green channel of the RGB image sensor 1, the band range of the second band collection is within the band range of the green channel of the RGB image sensor 1, and the band range of the third band collection is within the band range of the blue channel of the RGB image sensor 1. The first band collection, the band collection, and the third band collection each include at least one band.

[0071] That is to say, the wavelength range of at least one band of light is within the wavelength range of the red channel of the RGB image sensor 1, the wavelength range of at least one band of light is within the wavelength range of the green channel of the RGB image sensor 1, and the wavelength range of at least one band of light is within the wavelength range of the blue channel of the RGB image sensor 1, thereby ensuring that the R pixel point 13, the G pixel point 14 and the B pixel point 15 of the RGB image sensor 1 can all be sensitive to light, avoiding the situation where some pixels are idle.

[0072] Specifically, the filter layer 2 allows light of n different wavelength bands to pass through, wherein the first wavelength band set, the second wavelength band set, and the third wavelength band set each include n / 3 wavelength bands.

[0073] That is to say, the wavelength range of n / 3 bands of light is within the wavelength range of the red channel of the RGB image sensor 1, the wavelength range of n / 3 bands of light is within the wavelength range of the green channel of the RGB image sensor 1, and the wavelength range of n / 3 bands of light is within the wavelength range of the blue channel of the RGB image sensor 1, so that each pixel unit can realize n / 3 spectral channels.

[0074] The filter layer 2 can allow light of at least four different wavelength bands to pass through, so n is greater than or equal to 6, that is, each pixel unit can realize at least two spectral channels, and the R pixel unit, G pixel unit and B pixel unit together can realize at least 6 spectral channels, thereby realizing multi-spectrum.

[0075] In one embodiment of the present application, Figure 1 The spectral chip further includes a housing 3 , in which the image sensor 1 and the filter layer 2 are both encapsulated.

[0076] It can be understood that packaging the image sensor 1 and the filter layer 2 together to obtain a multispectral chip assembly improves the integration of the multispectral chip assembly.

[0077] In one embodiment of the present application, the image sensor 1 has a photosensitive lens, and the filter layer 2 is connected to the photosensitive lens.

[0078] It is understandable that by directly arranging the filter layer 2 on the photosensitive lens of the image sensor 1 , the filter layer 2 can filter the light entering the image sensor 1 , which is simple to operate.

[0079] In some examples, the image sensor 1 is, for example, a CSP packaged image sensor 1 , that is, the image sensor 1 may be an image sensor 1 obtained based on a CSP packaging process.

[0080] In some examples, the image sensor 1 is, for example, a COB packaged image sensor 1 , that is, the image sensor 1 may be an image sensor 1 obtained based on a COB packaging process.

[0081] In one embodiment of the present application, the image sensor 1 is taken as an RGBX image sensor. Figure 3 and Figure 7The image sensor 1 includes a filter 11, which includes at least one filter unit module 12. Each filter unit module 12 includes an R filter unit 121, a G filter unit 122, a B filter unit 123 and at least one extended filter unit 124. The R filter unit 121 is used to allow light in the red band to pass through, the G filter unit 122 is used to allow light in the green band to pass through, the B filter unit 123 is used to allow light in the blue band to pass through, and the extended filter unit 124 is used to allow light in a specific band to pass through, and any one of the red band, the green band and the blue band is different from the specific band.

[0082] It is understood that the filter 11 of the image sensor 1 can pass light in the red band, the green band, the blue band, and a specific wavelength band. The image sensor 1 includes at least four pixel units, meaning that the image sensor 1 can implement at least four spectral channels. Assuming that the filter layer 2 can pass light in a different wavelength bands, the expanded configuration of the filter unit 124 increases the sensitivity range of the image sensor 1, thereby increasing the upper limit of a, thereby increasing the number of spectral channels that the multispectral chip assembly can implement.

[0083] When the filter layer 2 allows light of at least five different wavelength bands to pass through, the filter layer 2 can make the light entering the image sensor 1 include at least five different wavelength bands, thereby increasing the number of spectral channels that can be achieved by the image sensor 1.

[0084] When the filter layer 2 allows light of four different wavelength bands to pass through, although the filter layer 2 cannot increase the number of spectral channels, it can limit the width of the sensitive wavelength band of the image sensor 1 to improve the photosensitivity effect.

[0085] Specifically, such as Figure 3 The extended filter unit 124 includes an X-ray filter unit 1241, which is used to allow light of a specific wavelength band to pass through. The provision of the X-ray filter unit 1241 increases the sensitivity range of the image sensor 1, which helps to increase the number of spectral channels that can be realized by the multispectral chip assembly.

[0086] In some examples, there are at least two X-ray filter units 1241, with different X-ray filter units 1241 configured to pass light of different wavelength bands. In other words, the image sensor 1 can now implement at least five spectral channels. Assuming that the filter layer 2 can pass light of a different wavelength bands, the provision of at least two X-ray filter units 1241 increases the sensitivity range of the image sensor 1, thereby increasing the upper limit of a and, therefore, the number of spectral channels achievable by the multispectral chip assembly.

[0087] In one embodiment of the present application, the image sensor 1 is taken as an RGBX image sensor. Figure 4 and Figure 7 The image sensor 1 includes an R pixel 13, a G pixel 14, a B pixel 15 and an extended pixel 16. The light band obtained by any one of the R pixel 13, the G pixel 14 and the B pixel 15 is different from the light band obtained by the extended pixel 16.

[0088] In other words, the image sensor 1 can implement at least four spectral channels. Assuming that the filter layer 2 allows light of a different wavelength bands to pass through, by expanding the pixel 16, the sensitivity range of the image sensor 1 is increased, thereby increasing the upper limit of a, that is, increasing the number of spectral channels that can be implemented by the multispectral chip assembly.

[0089] In some examples, after filtering by the light filter layer, the R pixel 13 , the G pixel 14 , the B pixel 15 , and the extended pixel 16 can sense the same number of wavelength bands of light.

[0090] In some examples, such as Figure 4 The expanded pixel 16 includes at least one X pixel, and the expanded pixel 16 is used to capture at least one of long-wave ultraviolet light UA, medium-wave ultraviolet light UB, near-infrared light NR, mid-infrared light MR, and far-infrared light LR. In other words, the image sensor 1 can sense not only visible light but also invisible light, thereby increasing the sensitivity range of the image sensor 1.

[0091] In one embodiment of the present application, Figure 5 The filter layer 2 includes at least four filter areas 20, each filter area 20 is used to allow light of at least three different wavelength bands to pass through, and different filter areas 20 are used to allow light of different wavelength bands to pass through.

[0092] That is, the filter layer 2 can allow light of at least 12 different wavelength bands to pass through, thereby enabling the image sensor 1 to realize at least 12 spectral channels.

[0093] The filter layer 2 may also include only one filter area, in which case the filter area is used to allow light of at least four different wavelength bands to pass through. That is, the filter layer 2 is a whole, and the entire filter layer 2 can pass light of at least four different wavelength bands.

[0094] In some examples, each filter region 20 is configured to allow light of 8 different wavelength bands to pass through, and thus the filter layer 2 can allow light of 32 different wavelength bands to pass through, and thus the image sensor 1 can implement 32 channels.

[0095] In some examples, such as Figure 12The four filter areas 20 include a first filter area, a second filter area, a third filter area, and a fourth filter area. The first filter area allows light from a first filter band set to pass through, the second filter area allows light from a second filter band set to pass through, the third filter area allows light from a third filter band set to pass through, and the fourth filter area allows light from a fourth filter band set to pass through. The first filter band set includes a 410nm band, a 450nm band, a 480nm band, a 550nm band, a 610nm band, a 650nm band, and a 810nm band. The second filter band The collection includes 415nm band, 455nm band, 485nm band, 560nm band, 615nm band, 670nm band and 815nm band, the third filter band collection includes 420nm band, 460nm band, 490nm band, 565nm band, 620nm band, 680nm band and 820nm band, and the fourth filter band collection includes 425nm band, 465nm band, 495nm band, 570nm band, 625nm band, 6805nm band and 825nm band.

[0096] Specifically, at least one wavelength band of light falls within the red wavelength range, at least one wavelength band of light falls within the green wavelength range, at least one wavelength band of light falls within the blue wavelength range, and at least one wavelength band of light falls within a specific wavelength range. This ensures that at least one wavelength band of light can pass through the R filter unit, at least one wavelength band of light can pass through the G filter unit, and at least one wavelength band of light can pass through the B filter unit, ensuring that all photosensitive units of the image sensor can sense light.

[0097] In one embodiment of the present application, when the central wavelength of light passing through the filter layer 2 is between 400 nm and 420 nm, the quantum efficiency (QE value) of the multi-spectral chip assembly is between 38% and 40%; and / or,

[0098] When the central wavelength of light passing through the filter layer 2 is between 450 nm and 470 nm, the quantum efficiency (QE value) of the multi-spectral chip assembly is between 50% and 51%; and / or,

[0099] When the central wavelength of light passing through the filter layer 2 is between 500 nm and 520 nm, the quantum efficiency (QE value) of the multi-spectral chip assembly is between 53% and 55%; and / or,

[0100] When the central wavelength of light passing through the filter layer 2 is between 540 nm and 560 nm, the quantum efficiency (QE value) of the multi-spectral chip assembly is between 51.5% and 52.5%; and / or,

[0101] When the central wavelength of light passing through the filter layer 2 is between 640 nm and 660 nm, the quantum efficiency (QE value) of the multi-spectral chip assembly is between 40.3% and 42%; and / or,

[0102] When the central wavelength of light passing through the filter layer 2 is between 800 nm and 820 nm, the quantum efficiency (QE value) of the multi-spectral chip assembly is between 16% and 19%.

[0103] It is understandable that the spectral chip has a higher quantum efficiency (>50%) in the 450nm-470nm (blue light), 500nm-520nm (cyan light), and 540nm-560nm (yellow-green light) regions, and can more efficiently capture photons of these specific wavelengths and convert them into electrical signals, significantly improving the optical signal detection capability and signal-to-noise ratio in these bands.

[0104] It is understandable that the spectral chip maintains a high quantum efficiency at 640nm-660nm (red light), and the chip's spectral response is highly matched with the characteristic wavelengths of these key biological / chemical indicators, greatly improving the accuracy and sensitivity of related biosensors or health monitoring equipment.

[0105] It is understandable that ambient light (especially sunlight) is rich in near-infrared light. Reducing the quantum efficiency corresponding to the 800nm-820nm band and the 400nm-420nm band can significantly reduce the interference of the NIR component in ambient light on the target visible light signal (especially blue and green light).

[0106] In some examples, such as Figure 9 and Figure 10 , when the central wavelength of light passing through the filter layer 2 is 410 nm, the quantum efficiency of the spectrum chip is 39.4%; and / or,

[0107] When the central wavelength of light passing through the filter layer 2 is 460 nm, the quantum efficiency of the spectrum chip is 50.6%; and / or,

[0108] When the central wavelength of light passing through the filter layer 2 is 510 nm, the quantum efficiency of the spectrum chip is 54.5%; and / or,

[0109] When the central wavelength of light passing through the filter layer 2 is 550 nm, the quantum efficiency of the spectrum chip is 52.0%; and / or,

[0110] When the central wavelength of light passing through the filter layer 2 is 650 nm, the quantum efficiency of the spectrum chip is 40.3%; and / or,

[0111] When the central wavelength of light passing through filter layer 2 is 810 nm, the quantum efficiency of the spectral chip is 17.3%. In one embodiment of the present application, the maximum transmittance of filter layer 2 is greater than or equal to 90%, which helps maximize signal strength, significantly improve the signal-to-noise ratio, and enhance the accuracy of multispectral data.

[0112] In one embodiment of the present application, the filter layer 2 allows light with a central wavelength between 400 nm and 420 nm to pass through, and the wavelength band width of light with a central wavelength between 400 nm and 420 nm is between 40 nm and 43 nm; and / or,

[0113] The filter layer 2 allows light with a central wavelength between 450nm and 470nm to pass through, and the wavelength band width of the light with a central wavelength between 450nm and 470nm is between 31nm and 32nm; and / or,

[0114] The filter layer 2 allows light with a central wavelength between 500nm and 520nm to pass through, and the wavelength band width of the light with a central wavelength between 500nm and 520nm is between 29nm and 31nm; and / or,

[0115] The filter layer 2 allows light with a central wavelength between 540nm and 560nm to pass through, and the wavelength band width of the light with a central wavelength between 540nm and 560nm is between 31.5nm and 33nm; and / or,

[0116] The filter layer 2 allows light with a central wavelength between 640nm and 660nm to pass through, and the wavelength band width of the light with a central wavelength between 640nm and 660nm is between 40.5nm and 44nm; and / or,

[0117] The filter layer 2 allows light with a central wavelength between 800nm ​​and 820nm to pass through, and the wavelength band width of the light with a central wavelength between 800nm ​​and 820nm is between 98nm and 102nm.

[0118] It is understandable that the band width design corresponding to 400nm-420nm is conducive to balancing the ultraviolet signal intensity and process difficulty.

[0119] The band widths corresponding to 500nm-520nm and 540nm-560nm are narrower, which can avoid interference from adjacent bands.

[0120] The wavelength band width corresponding to 450nm-470nm is also relatively narrow, which is conducive to optimizing the detection of blue light absorbing substances while suppressing ambient light noise.

[0121] The band width corresponding to 800nm-820nm is relatively wide, which is conducive to improving the near-infrared signal flux, compensating for the disadvantage of low quantum efficiency (QE value) in this band, and ensuring the signal-to-noise ratio of active sensing.

[0122] The wavelength band width corresponding to 640nm-660nm is also relatively wide, which can cover the red light area and balance sensitivity and anti-interference ability.

[0123] In some examples, such as Figure 9 and Figure 10 , the filter layer 2 allows light with a central wavelength of 410 nm to pass through, and the wavelength band width of the light with a central wavelength of 410 nm is 42 nm; and / or,

[0124] The filter layer 2 allows light with a central wavelength of 460 nm to pass through, and the wavelength band width of the light with a central wavelength of 460 nm is 32.5 nm; and / or,

[0125] The filter layer 2 allows light with a central wavelength of 510 nm to pass through, and the wavelength band width of the light with a central wavelength of 510 nm is 30 nm; and / or,

[0126] The filter layer 2 allows light with a central wavelength of 550 nm to pass through, and the wavelength band width of the light with a central wavelength of 550 nm is 32 nm; and / or,

[0127] The filter layer 2 allows light with a central wavelength of 650 nm to pass through, and the wavelength band width of light with a central wavelength of 410 nm is 41 nm; and / or,

[0128] The filter layer 2 allows light with a central wavelength of 810 nm to pass through, and the wavelength band width of the light with a central wavelength of 810 nm is 100 nm.

[0129] In one embodiment of the present application, the cutoff rate (OD) of the filter layer 2 is greater than or equal to 2.5, which is beneficial to reducing the influence of interfering light, improving the signal-to-noise ratio, improving the independence of the spectral data of each channel, and reducing the complexity of the algorithm correction.

[0130] In some examples, such as Figure 9 and Figure 10 , the cutoff rate of the filter layer 2 is greater than or equal to 3, for example.

[0131] In one embodiment of the present application, Figure 9 and Figure 10 The error tolerance of the filter layer 2 is less than or equal to 1%, which is beneficial to ensure the absolute accuracy of the multi-spectral channel and improve stability.

[0132] It can be understood that the error tolerance refers to the ratio of the maximum deviation of key parameters such as center wavelength offset, bandwidth change, transmittance fluctuation, etc. not exceeding the design value. For example, when the error tolerance is less than or equal to 1%, it means that the maximum deviation of key parameters such as center wavelength offset, bandwidth change, transmittance fluctuation, etc. does not exceed 1% of the design value.

[0133] In some embodiments, along the optical path direction of the filter layer of the housing 3, the orthographic projection of the image sensor 1 at the bottom of the housing 3 coincides with the orthographic projection of the filter layer 2 at the bottom of the housing 3, thereby ensuring that the filter layer 2 can effectively filter the light entering the image sensor 1.

[0134] Along the optical path direction of the filter layer of the housing 3 , the orthographic projection of the image sensor 1 at the bottom of the housing 3 is within the orthographic projection of the filter layer 2 at the bottom of the housing 3 , thereby ensuring that the filter layer 2 can effectively filter the light entering the image sensor 1 .

[0135] It should be noted that the optical path direction of the filter layer refers to the transmission direction of the light when the light enters the filter layer.

[0136] In some embodiments, in some embodiments, as Figure 6 The filter layer includes at least one first filter film 211 and at least one second filter film 212. The refractive index of the first filter film 211 is greater than the refractive index of the second filter film 212. The first filter film 211 and the second filter film 212 are alternately arranged.

[0137] It is understood that by alternately stacking the first filter film 211 and the second filter film 212 having different refractive indices to form a filter layer, the filter layer can transmit light of at least two different wavelength bands, thereby achieving the goal of obtaining light of multiple different wavelength bands using the same filter layer. That is, the spectroscopic structures of the multiple wavelength bands are the same. Furthermore, the filter layer of the present application does not require repeated etching, cleaning, and other steps during preparation, resulting in a simple process and low cost.

[0138] In some examples, the present application employs multilayer film technology, employing alternating stacks of high-refractive-index filter films (e.g., titanium oxide, specifically titanium oxide or titanium dioxide) and low-refractive-index filter films (e.g., SiO2). By combining these two films at varying thicknesses, at least one narrowband transmission peak light band is transmitted through the filter layer, enabling a single filter layer to transmit multiple, independent narrowband transmission peak light bands, such as two, four, or seven. For example, a single filter layer can achieve four independent narrowband transmission peak light bands with center wavelengths of 450 nm, 550 nm, 650 nm, and 750 nm.

[0139] It should be noted that, based on functional requirements and performance parameter requirements, the materials used in the first and second optical filters 211 and 212, the alternating stacking arrangement of high- and low-refractive-index materials, and the thickness combination can be adjusted to ensure that the wavelength range of the transmitted narrowband transmission peak is within the center wavelength ± (1 nm - 100 nm), with a half-width (FWHM) ≤ (1 nm - 100 nm). For example, if the center wavelength of the transmitted light is 550 nm, the actual transmitted narrowband transmission peak wavelength range is 550 nm ± (1 nm - 100 nm); if the center wavelength is 450 nm, the narrowband transmission peak wavelength range is 450 nm ± (1 nm - 100 nm). Crosstalk suppression between multiple narrowband transmission peaks transmitted by the same filter layer is sufficiently low, such as isolation between adjacent wavelength bands ≥ 30 dB, ensuring sufficient independence of the optical channel data after corresponding quantum responses.

[0140] In some examples, the material of the first filter film 211 and the second filter film 212 can be any one of aluminum (Al), chromium (Cr), gold (Au), silver (Ag), silicon (Si), germanium (Ge), aluminum oxide (Al2O3), cerium oxide (CeO2), hafnium dioxide (HfO2), indium tin oxide (ITO), magnesium oxide (MgO), niobium pentoxide (Nb2O5), silicon monoxide (SiO), silicon dioxide (SiO2), titanium dioxide (Tio2), titanium pentoxide (Ti3O5), tantalum pentoxide (Ta2O5), yttrium oxide (Y2O3), zinc oxide (ZnO), zirconium oxide (ZrO2), aluminum fluoride (AlF3), magnesium fluoride (MgF2), calcium fluoride (CaF2), ytterbium fluoride (YbF3), yttrium fluoride (YF3), zinc sulfide (ZnS), and zinc selenide (ZnSe).

[0141] Specifically, different first filter films 211 have different thicknesses.

[0142] It is understood that when there are at least two first filter films 211, by adjusting the thicknesses of the different first filter films 211 so that the thicknesses of the different first filter films 211 are different, the number of wavelengths of light that can be transmitted by the filter layer formed by the first filter films 211 can be changed, or the wavelength range of light that can be transmitted by the filter layer can be changed.

[0143] Specifically, different second filter films 212 have different thicknesses.

[0144] It is understood that when there are at least two second filter films 212, by adjusting the thicknesses of the different second filter films 212 so that the thicknesses of the different second filter films 212 are different, the number of wavelengths of light that can be transmitted by the filter layer formed by the second filter films 212 can be changed, or the wavelength range of light that can be transmitted by the filter layer can be changed.

[0145] Specifically, the first filter film 211 and the second filter film 212 have different thicknesses.

[0146] It is understood that by adjusting the thickness of the first filter film 211 and the second filter film 212 so that the thickness of the first filter film 211 and the second filter film 212 are different, the number of wavelengths of light that can be transmitted by the filter layer composed of the first filter film 211 and the second filter film 212 can be changed, or the wavelength range of light that can be transmitted by the filter layer can be changed.

[0147] In some examples, the thicknesses of the first filter film 211 and the second filter film 212 may also be the same.

[0148] In some embodiments, the filter layer includes at least two filter regions 20 , and different filter regions 20 can allow light of different wavelength bands to pass through.

[0149] It is understandable that different filter regions 20 can transmit light of different wavelength bands, thereby enabling the filter layer to transmit light of at least two different wavelength bands simultaneously.

[0150] Specifically, different filter regions 20 have different thicknesses.

[0151] It is understandable that by making the thickness of the filter medium in different filter areas 20 different, different filter areas 20 can be made to transmit light of different wavelength bands.

[0152] Specifically, different filter regions 20 are made of different materials.

[0153] It is understandable that by making the filter media in different filter areas 20 have different materials, different filter areas 20 can be made to transmit light of different wavelength bands.

[0154] The following uses an RGB image sensor 1 and a 6-channel filter layer 2 as an example to explain this application:

[0155] like Figure 8 and Figure 11 The filter layer 2 can transmit six multispectral bands, of which two are within the photosensitive band of pixel B, two are within the photosensitive band of pixel G, and two are within the photosensitive band of pixel R. For example, the bands of channels CH1 and CH2 are within the photosensitive band of pixel B (400-500nm), the bands of channels CH3 and CH4 are within the photosensitive band of pixel G (500-600nm), and the bands of channels CH5 and CH6 are within the photosensitive band of pixel R (600-700nm).

[0156] Existing equipment can be used to detect the quantum efficiency corresponding to the six bands of CH1, CH2, CH3, CH4, CH5 and CH6. The quantum efficiency of different bands is different.

[0157] By combining the photosensitive data of pixel B with the quantum efficiencies of CH1 and CH2, the mixed photosensitive data of pixel B can be demixed to obtain photosensitive data corresponding to the CH1 and CH2 bands, allowing pixel B to achieve dual-channel performance. Similarly, demixing can be performed on pixels R and G, ultimately yielding six channels of photosensitive data. In other words, by adding a filter layer 2 to image sensor 1, the number of spectral channels can be increased.

[0158] It should be noted that mixed light can also be demixed using any other suitable method. Examples include prism dispersion, diffraction grating, interferometry, fiber spectroscopy, and filtering. Prism dispersion utilizes the different refractive indices of a prism for light of different wavelengths, causing the mixed light to disperse after passing through the prism, thereby separating spectra of different wavelengths. The diffraction grating method exploits the diffraction properties of a grating to decompose mixed light into spectra of different wavelengths. Interferometry uses an interferometer to split mixed light into two beams, separating the different wavelengths through interference fringes. Fiber spectroscopy utilizes a combination of optical fibers and a spectrometer to transmit the mixed light to a spectrometer for separation and analysis. Filtering, on the other hand, uses optical filters to selectively transmit specific wavelengths and filter out other wavelengths. This flexibility allows for the selection of specific wavelengths as needed, making it the preferred method for spectral channel separation in multispectral imaging. Mixed spectra can also be separated through computational methods. Common approaches include deep learning-based mixed spectral decomposition methods and sparse representation-based mixed light decomposition systems.

[0159] When the image sensor 1 has four or other photosensitive bands and the filter layer 2 is transparent to other bands, the demixing principle is the same as the above principle and will not be described in detail here.

[0160] According to an embodiment of the second aspect of the present application, Figure 13 , a multi-spectral chip component preparation method includes:

[0161] Step 101: acquiring an image sensor 1, where the image sensor 1 is used to acquire light of different wavelength bands to obtain spectral information of each channel, wherein different channels correspond to spectral information of different wavelength bands;

[0162] Step 102 : forming a filter layer 2 on the light-sensing path of the image sensor 1 . The filter layer 2 is used to filter the light entering the image sensor 1 and allow light of at least four different wavelength bands to pass through.

[0163] It is understood that by forming the filter layer 2 on the photosensitive path of the image sensor 1, light will first pass through the filter layer 2 before entering the image sensor 1. The filter layer 2 can filter the light entering the image sensor 1, allowing at least four different wavelength bands of light to enter the image sensor 1. The wavelength range of the light that can pass through the filter layer 2 is within the wavelength range of light that can be captured by the image sensor 1, ensuring that the image sensor 1 can form an image normally. In other words, by forming the filter layer 2 on the photosensitive path of the image sensor 1, the present application enables the light of the image sensor 1 to include at least four different wavelength bands, thereby realizing at least four spectral channels, thereby increasing the number of channels and realizing multispectral imaging.

[0164] In some embodiments, after forming the filter layer 2 on the light-sensing path of the image sensor 1 , the method further includes:

[0165] The image sensor 1 and the filter layer 2 are encapsulated in a housing 3 .

[0166] It is understandable that after the filter layer 2 is formed on the light-sensing path of the image sensor 1 , the image sensor 1 and the filter layer 2 are packaged together to form a multispectral chip assembly, thereby improving the integration of the multispectral chip.

[0167] In one embodiment of the present application, the step of forming the filter layer 2 on the light-sensing path of the image sensor 1 includes:

[0168] A filter layer 2 is stacked on the photosensitive lens of the image sensor 1 .

[0169] It can be understood that the image sensor 1 is sensitive to light through a photosensitive lens, and a filter layer 2 is stacked at the photosensitive lens of the image sensor 1, so that the filter layer 2 is located on the photosensitive path of the image sensor 1, and then the filter layer 2 can filter the light entering the image sensor 1, thereby increasing the number of channels that the image sensor 1 can achieve.

[0170] In some examples, the step of acquiring the image sensor 1 includes:

[0171] An image sensor 1 obtained based on a CSP packaging process is obtained.

[0172] In some examples, the step of acquiring the image sensor 1 includes:

[0173] An image sensor 1 obtained based on a COB packaging process is obtained.

[0174] According to an embodiment of the third aspect of the present application, an electronic device includes the above-mentioned multi-spectral chip assembly.

[0175] According to the electronic device of an embodiment of the present application, by providing a filter layer 2 on the photosensitive path of the image sensor 1, light passes through the filter layer 2 before entering the image sensor 1. The filter layer 2 can filter the light entering the image sensor 1, allowing light of at least four different wavelength bands to enter the image sensor 1. The wavelength range of the light that can pass through the filter layer 2 is all within the wavelength range of the light that can be obtained by the image sensor 1, ensuring that the image sensor 1 can form an image normally. In other words, by providing the filter layer 2 on the photosensitive path of the image sensor 1, the present application enables the light of the image sensor 1 to include at least four different wavelength bands, thereby realizing at least four spectral channels, thereby increasing the number of channels and realizing multispectral imaging.

[0176] The above is a detailed introduction to the embodiments of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method and core idea of ​​the present application. At the same time, for those skilled in the art, based on the ideas of the present application, there may be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A multispectral chip assembly, characterized in that: include: An image sensor is used to acquire light of different wavelength bands to obtain spectral information of each channel, wherein different channels correspond to spectral information of different wavelength bands; a filter layer, disposed on a light-sensing path of the image sensor, the filter layer being configured to filter light entering the image sensor and allow light of at least four different wavelength bands to pass through; The wavelength range of light that can pass through the filter layer is within the wavelength range of light that can be captured by the image sensor.

2. The multispectral chip assembly according to claim 1, characterized in that: The wavelength width of at least a portion of the wavelength band of light that can pass through the filter layer is smaller than the wavelength width of at least one wavelength band of light that can be captured by the image sensor.

3. The multispectral chip assembly according to claim 1, characterized in that: The image sensor includes a filter, which includes at least one filter unit module. Each of the filter unit modules includes an R filter unit, a G filter unit, a B filter unit and at least one extended filter unit. The R filter unit is used to allow light in a red band to pass through, the G filter unit is used to allow light in a green band to pass through, the B filter unit is used to allow light in a blue band to pass through, and the extended filter unit is used to allow light in a specific band to pass through, and any one of the red band, the green band and the blue band is different from the specific band.

4. The multispectral chip assembly according to claim 3, characterized in that: The expansion filter unit includes an X-ray filter unit. The number of the X-ray filter units is at least two, and different X-ray filter units are used to allow light of different wavelength bands to pass through.

5. The multispectral chip assembly according to claim 1, characterized in that: The image sensor includes R pixels, G pixels, B pixels and at least one extended pixel, and the light band acquired by any one of the R pixels, the G pixels and the B pixels is different from the light band acquired by the extended pixel.

6. The multispectral chip assembly according to claim 5, characterized in that: The extended pixel points include at least one X pixel point, and the extended pixel points are used to obtain at least one of long-wave ultraviolet light, medium-wave ultraviolet light, near-infrared light, medium-infrared light, and far-infrared light.

7. The multispectral chip assembly according to claim 3, characterized in that: The filter layer comprises at least four filter areas, each filter area is used to allow light of at least three different wavelength bands to pass through, and different filter areas are used to allow light of different wavelength bands to pass through; or, The filter layer includes a filter area, and the filter area is used to allow light of at least four different wavelength bands to pass through.

8. The multispectral chip assembly according to claim 7, characterized in that: The wavelength range of at least one band of light is within the red wavelength range, the wavelength range of at least one band of light is within the green wavelength range, the wavelength range of at least one band of light is within the blue wavelength range, and the wavelength range of at least one band of light is within the specific wavelength range.

9. The multispectral chip assembly according to claim 1, characterized in that: When the central wavelength of light passing through the filter layer is between 400 nm and 420 nm, the quantum efficiency of the multi-spectral chip assembly is between 38% and 40%; and / or, When the central wavelength of light passing through the filter layer is between 450 nm and 470 nm, the quantum efficiency of the multi-spectral chip assembly is between 50% and 51%; and / or, When the central wavelength of light passing through the filter layer is between 500 nm and 520 nm, the quantum efficiency of the multi-spectral chip assembly is between 53% and 55%; and / or, When the central wavelength of light passing through the filter layer is between 540 nm and 560 nm, the quantum efficiency of the multi-spectral chip assembly is between 51.5% and 52.5%; and / or, When the central wavelength of light passing through the filter layer is between 640 nm and 660 nm, the quantum efficiency of the multi-spectral chip assembly is between 40.3% and 42%; and / or, When the central wavelength of light passing through the filter layer is between 800 nm and 820 nm, the quantum efficiency of the multi-spectral chip assembly is between 16% and 19%.

10. The multispectral chip assembly according to any one of claims 1 to 9, characterized in that: The maximum transmittance of the filter layer is greater than or equal to 90%; and / or, The cutoff rate of the filter layer is greater than or equal to 2.5; and / or, The error tolerance of the filter layer is less than or equal to 1%.

11. The multispectral chip assembly according to any one of claims 1 to 9, characterized in that: The filter layer allows light with a central wavelength between 400nm and 420nm to pass through, and the wavelength band width of the light with a central wavelength between 400nm and 420nm is between 40nm and 43nm; and / or, The filter layer can allow light with a central wavelength between 450nm and 470nm to pass through, and the wavelength band width of the light with a central wavelength between 450nm and 470nm is between 31nm and 32nm; and / or, The filter layer allows light with a central wavelength between 500nm and 520nm to pass through, and the wavelength band width of the light with a central wavelength between 500nm and 520nm is between 29nm and 31nm; and / or, The filter layer allows light with a central wavelength between 540nm and 560nm to pass through, and the wavelength band width of the light with a central wavelength between 540nm and 560nm is between 31.5nm and 33nm; and / or, The filter layer allows light with a central wavelength between 640nm and 660nm to pass through, and the wavelength band width of the light with a central wavelength between 640nm and 660nm is between 40.5nm and 44nm; and / or, The filter layer allows light with a central wavelength between 800nm ​​and 820nm to pass through, and the wavelength band width of the light with a central wavelength between 800nm ​​and 820nm is between 98nm and 102nm.

12. The multispectral chip assembly according to any one of claims 1 to 2, characterized in that: The image sensor is an RGB image sensor.

13. The multispectral chip assembly according to claim 12, characterized in that: The filter layer can allow light of multiple different bands to pass through, and the multiple different bands include a first band collection, a second band collection, and a third band collection. The band range of the first band collection is within the band range of the green channel of the RGB image sensor, the band range of the second band collection is within the band range of the green channel of the RGB image sensor, and the band range of the third band collection is within the band range of the blue channel of the RGB image sensor. The first band collection, the band collection, and the third band collection each include at least one band.

14. The multispectral chip assembly according to claim 13, wherein: The filter layer can allow light of n different wavelength bands to pass through, wherein the first wavelength band set, the second wavelength band set, and the third wavelength band set each include n / 3 wavelength bands.

15. An electronic device, characterized in that: Comprising the multispectral chip assembly according to any one of claims 1 to 14.

Images