Reflective optical semiconductor device and method for manufacturing same

Abstract

A reflective semiconductor device provided with a light-emitting element chip (2), a light-receiving element chip (1), and a mounting part (3), the light-receiving element chip (1) being mounted on the mounting part (3) by means of an insulating member (12). In a method for manufacturing a reflective semiconductor device in which a light-emitting element chip (2) is mounted by a conductive member (11) on a mounting part electrode (13C) disposed in a through-hole (14) of a light-receiving element chip (1), the conductive member (11) is covered by an insulating member (12), the insulating member (12) is coated on a mounting part (3) to which the light-emitting element chip (2) is connected and mounted by the conductive member (11), and the light-emitting element chip (2) is mounted on the mounting part electrode (13C) by the conductive member (11). The light-receiving element chip (1) is placed on the insulating member (12), the light-receiving element chip (1) is pressed, and the conductive member (11) is covered with the extruded insulating member (12).

Description

Technical Field

[0001] The present invention relates to a reflective optical semiconductor device including a light-emitting element chip having a light-emitting element and a light-receiving element chip having a light-receiving element, and a method for manufacturing the same. Background Art

[0002] A reflective optical sensor used in a reflective encoder is configured such that light emitted from a light emitting element included in a reflective optical semiconductor device is reflected by a reflector disposed opposite the reflective optical semiconductor device and enters a light receiving element, thereby obtaining a detection signal.

[0003] Typically, when a reflective optical semiconductor device is mounted on a mounting portion, the device is constructed such that a light-emitting element chip is stacked on a light-receiving element chip and the light-receiving element chip is mounted on the mounting portion (for example, Patent Document 1), or the device is constructed such that a light-receiving element chip having a through hole and a light-emitting element chip arranged in the through hole are mounted on the mounting portion (for example, Patent Document 2).

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Laid-Open No. 2009-182028

[0007] Patent Document 2: Japanese Patent Application Laid-Open No. 2005-121593 Summary of the Invention

[0008] Problems to be solved by the invention

[0009] Figure 8 This is an explanatory diagram showing an example of a reflective optical semiconductor device. It is a structure in which a light-emitting element chip 2 is stacked on a light-receiving element chip 1A, and the light-receiving element chip 1A is mounted on a mounting portion 3A. A light-receiving element array 5 composed of a plurality of light-receiving elements 4 is arranged on the light-receiving element chip 1A. The light-receiving elements 4 can be composed of photodiodes, for example. The cathode and anode of the photodiodes are connected to light-receiving element electrodes 6 arranged on the upper surface (light-receiving surface) of the light-receiving element chip 1A using wiring (not shown).

[0010] A light-emitting element is disposed on the light-emitting element chip 2. The light-emitting element can be formed, for example, of a light-emitting diode. A light-emitting portion 7 that emits light and a light-emitting element electrode 8 connected to the cathode of the light-emitting diode are disposed on the upper surface (light-emitting surface) of the light-emitting element chip 2. A light-emitting element electrode 8A connected to the anode of the light-emitting diode is disposed on the lower surface (mounting surface) of the light-emitting element chip 2. The light-emitting element electrode 8 is connected to the light-emitting element wiring 9 disposed on the light-receiving surface of the light-receiving element chip 1A via a metal wire 10. The light-emitting element electrode 8A is connected to the light-emitting element wiring 9A disposed on the light-receiving surface of the light-receiving element chip 1A via a conductive member 11 composed of, for example, silver paste. The light-emitting element chip 2 is stacked on the light-receiving element chip 1A.

[0011] The light-receiving element chip 1A, on which the light-receiving element chips 2 are stacked, is bonded and mounted on a mounting portion 3A formed of an organic substrate or the like, using, for example, an insulating member 12 serving as an adhesive. Mounting portion 3A is provided with mounting portion electrodes 13 and 13A. Each mounting portion electrode 13 is connected to either the light-receiving element electrode 6 or the light-emitting element wiring 9 disposed on the light-receiving surface of the light-receiving element chip 1A via a metal wire 10. The mounting portion electrode 13A is connected to the light-emitting element wiring 9A via a metal wire 10.

[0012] Figure 9 This is an explanatory diagram showing another example of a reflective optical semiconductor device, in which a light-receiving element chip 1B having a through hole 14 and a light-emitting element chip 2 arranged in the through hole 14 are mounted on a mounting portion 3B. Figure 8 Similar to the light receiving element chip 1A shown, the light receiving element chip 1B is provided with a light receiving element array 5 composed of a plurality of light receiving elements 4, light receiving element electrodes 6, and light emitting element wiring 9. However, unlike the light receiving element chip 1A, the light receiving element chip 1B is not provided with light emitting element wiring 9A, and a through hole 14 is provided in the center.

[0013] The light emitting element chip 2 is set to Figure 8 The same structure as the light emitting element chip 2 shown in FIG. Figure 9 As shown, the light-emitting element chip 2 is arranged in the through-hole 14 of the light-receiving element chip 1B. The light-emitting element electrode on the mounting surface of the light-emitting element chip 2 is connected to the mounting portion electrode 13B arranged in the through-hole 14 by a conductive member, and the light-emitting element chip 2 is mounted on the mounting portion 3B. The light-emitting element electrode 8 arranged on the light-emitting surface of the light-emitting element chip 2 is connected to the light-emitting element wiring 9 arranged on the upper surface (light-receiving surface) of the light-receiving element chip 1B by a metal wire 10.

[0014] Light-receiving element chip 1B is bonded and mounted on mounting portion 3B, which is formed of an organic substrate, etc., using, for example, an insulating member 12 serving as an adhesive. Mounting portion 3B is provided with mounting portion electrodes 13, similar to mounting portion 3A. Each mounting portion electrode 13 is connected to either light-receiving element electrode 6 or light-emitting element wiring 9 via a metal wire 10.

[0015] The mounting portion electrode 13B is continuous to the through hole 14 and is configured so that the end portion thereof is larger than the bottom surface of the light emitting element chip 2 and is arranged in the through hole 14. Figure 8 The light-emitting element electrode 8A and the light-emitting element wiring 9A shown are similarly connected to the light-emitting element electrode on the mounting surface of the light-emitting element chip 2 using a conductive member. Thus, since the mounting portion electrode 13B is disposed below the light-receiving element chip 1B, the light-receiving element chip 1B is mounted on the mounting portion 3B by being bonded to the mounting portion 3B and a portion of the mounting portion electrode 13B using the insulating member 12 serving as an adhesive.

[0016] exist Figure 8 and Figure 9 In the reflective optical semiconductor device shown, if the light-emitting surface of the light-emitting element chip 2 is covered with a coating resin or the like, light emitted from the light-emitting portion 7 may diffuse due to the lens effect of the coating resin, or may experience directional variations due to variations in the thickness of the coating resin. Therefore, the light-emitting surface of the light-emitting element chip 2 is not covered with the coating resin and is mounted in a state exposed to the outside air. On the other hand, to ensure the reliability of the reflective optical semiconductor device, the conductive member 11 connecting the light-emitting element electrode 8A on the mounting surface of the light-emitting element chip 2 to the light-emitting element wiring 9A or the mounting portion electrode 13B is covered with a coating material. In particular, when a material containing silver is used as the conductive member 11, sulfurization and migration of the silver occur, reducing the reliability of the reflective optical semiconductor device. Therefore, the surface of the conductive material 11 is covered with a coating resin.

[0017] Figure 10 It is an explanation Figure 8 The schematic cross-sectional view of the coating method of the coating resin in the reflective optical semiconductor device shown is equivalent to passing through Figure 8 A cross-sectional view of the center of the light emitting element chip 2 and the light emitting element wiring 9, 9A of the reflective optical semiconductor device shown in FIG. Figure 10 As shown, when the conductive component 11 is covered with the coating resin 16 discharged from the dispenser 15, since there is a wide space around the light-emitting element chip 2, the coating resin 16 can be applied to the conductive component 11 while avoiding the light-emitting surface of the light-emitting element chip 2 without strictly aligning the dispenser 15 or controlling the discharge volume.

[0018] on the other hand, Figure 11 It is an explanation Figure 9 The schematic cross-sectional view of the coating method of the coating resin in the reflective optical semiconductor device shown in FIG. Figure 9 A cross-sectional view of the center of the light emitting element chip 2, the light emitting element wiring 9 and the mounting portion electrode 13B in the left-right direction of the drawing. Figure 11 As shown, in order to cover the conductive member 11 with the coating resin 16 , it is necessary to discharge the coating resin 16 from the dispenser 15 into the through-hole 14 .

[0019] In order to perform high-precision sensing in a typical reflective optical semiconductor device, it is necessary to reduce the configuration deviation of the light-receiving element chip 1B and the light-emitting element chip 2. Therefore, it is preferable to set the gap between the through hole 14 and the light-emitting element chip 2 to be narrow. In order to discharge the coating resin 16 into this narrow gap, accurate positioning of the dispenser 15 and control of the discharge amount of the coating resin 16 are required, and the time required for the coating process of the coating resin 16 becomes longer. In addition, if low-precision positioning and discharge amount control are performed in order to complete the coating process in a short time, there is a problem that the position of the dispenser 15 is offset, the light-emitting surface of the light-emitting element chip 2 is covered by the coating resin 16, or a part of the conductive member 11 is not covered and exposed.

[0020] Therefore, an object of the present invention is to provide a reflective optical semiconductor device and a method for manufacturing the same, in which a conductive member is reliably and simply covered.

[0021] Solutions to Problems

[0022] As one embodiment of the present invention, a reflective optical semiconductor device comprises: a light-emitting element chip, which comprises a light-emitting element and a light-emitting element electrode; a light-receiving element chip, which comprises a light-receiving element, a light-receiving element electrode, a light-emitting element wiring connected to the light-emitting element electrode, and a through hole for arranging the light-emitting element chip; and a mounting portion, which is provided with a mounting portion electrode connected to any one of the light-emitting element electrode, the light-receiving element electrode, and the light-emitting element wiring, wherein the light-receiving element chip is provided with the light-receiving element electrode and the light-emitting element wiring on the light-receiving surface, and is mounted by an insulating member. Mounted on the mounting portion, the light-emitting element chip is provided with the light-emitting element electrodes on the light-emitting surface and the mounting surface, respectively. The light-emitting element electrode on the mounting surface is connected to the mounting portion electrode arranged in the through hole by a conductive member and mounted on the mounting portion. The conductive member is covered by the insulating member for mounting the light-receiving element chip on the mounting portion. The light-emitting element electrode on the light-emitting surface of the light-emitting element chip is connected to the light-emitting element wiring by a metal wire. The light-receiving element electrode and the light-emitting element wiring are respectively connected to the mounting portion electrode by a metal wire.

[0023] In addition, as another embodiment of the present invention, a method for manufacturing a reflective optical semiconductor device is constructed to include the following steps: a first step, in which a light-emitting element electrode arranged on the mounting surface is connected to a mounting portion electrode of the mounting portion by using a conductive member, and a light-emitting element chip having the above-mentioned light-emitting element and the light-emitting surface and the light-emitting element electrode on the above-mentioned mounting portion is mounted on the above-mentioned mounting portion; a second step, in which an insulating member is applied to a region of the above-mentioned mounting portion where a light-receiving element chip is arranged; and a third step, in which the above-mentioned light-receiving element chip having a light-receiving element, a light-receiving element electrode, a light-receiving element wiring connected to the above-mentioned light-receiving element electrode, and a through hole is placed on the above-mentioned mounting portion coated with the above-mentioned insulating member in a manner such that the above-mentioned light-receiving element chip is arranged in the above-mentioned through hole. a mounting portion; a fourth step, in which the insulating member is pressed by the light-receiving element chip, the insulating member is extruded from between the light-receiving element chip and the mounting portion, and the conductive member exposed in the through hole is covered with the extruded insulating member; a fifth step, in which the insulating member is cured and the light-receiving element chip is mounted on the mounting portion; and a sixth step, in which the light-emitting element electrode arranged on the light-emitting surface of the light-receiving element chip is connected to the light-receiving element wiring arranged on the light-receiving surface of the light-receiving element chip by metal wire, and the light-emitting element wiring and the light-receiving element electrode arranged on the light-receiving surface of the light-receiving element chip are respectively connected to the mounting portion electrode by metal wire.

[0024] Effects of the Invention

[0025] The reflective optical semiconductor device of the present invention can provide a highly reliable reflective optical semiconductor device in which the conductive member is securely covered with an insulating member, the light-emitting surface of the light-emitting element chip is not covered by the insulating member, and excellent directional characteristics are achieved. Furthermore, the method for manufacturing a reflective optical semiconductor device of the present invention utilizes a light-receiving element chip to press against the insulating member, causing the insulating member to be squeezed out. The squeezed insulating member can then be used to cover the conductive member, enabling the device to be easily manufactured with excellent directional characteristics and high reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 These are diagrams for explaining one embodiment (Embodiment 1) of a reflective optical semiconductor device as one aspect of the present invention.

[0027] Figure 2 yes Figure 1 A schematic cross-sectional view of a reflective optical semiconductor device.

[0028] Figure 3This is a diagram illustrating the directivity characteristics of the light-emitting element arranged in the light-emitting element chip of the first embodiment.

[0029] Figure 4 It is an explanatory diagram of one embodiment of the first step of a method for manufacturing a reflective optical semiconductor device as another embodiment of the present invention.

[0030] Figure 5 It is an explanatory diagram of one embodiment of the second step of the method for manufacturing a reflective optical semiconductor device as another embodiment of the present invention.

[0031] Figure 6 It is an explanatory diagram of one embodiment of the third step of the method for manufacturing a reflective optical semiconductor device as another embodiment of the present invention.

[0032] Figure 7 It is an explanatory diagram of one embodiment of the fourth step of the method for manufacturing a reflective optical semiconductor device as another embodiment of the present invention.

[0033] Figure 8 This is an explanatory diagram showing an example of a reflective optical semiconductor device.

[0034] Figure 9 This is an explanatory diagram showing another example of a reflective optical semiconductor device.

[0035] Figure 10 It is an explanation Figure 8 A schematic cross-sectional view of a coating resin coating method for a reflective optical semiconductor device.

[0036] Figure 11 It is an explanation Figure 9 A schematic cross-sectional view of a coating resin coating method for a reflective optical semiconductor device. DETAILED DESCRIPTION

[0037] Next, embodiments of the reflective optical semiconductor device and its manufacturing method according to the present invention will be described with reference to the accompanying drawings. However, the present invention is not limited to these embodiments and implementations, and the components, materials, and other components described below may be modified in various ways within the scope of the present invention. In the accompanying drawings, identical reference numerals indicate equivalent or identical components, and the sizes and positional relationships between components are for convenience of description and may not strictly reflect actual conditions.

[0038] (Reflective Optical Semiconductor Device)

[0039] First, an embodiment of a reflective optical semiconductor device will be described as one embodiment of the present invention. Figure 1 FIG1 is an explanatory diagram of one embodiment (Embodiment 1) of a reflective optical semiconductor device according to the present invention. Figure 2 yes Figure 1 The schematic cross-sectional view of the reflective optical semiconductor device of the embodiment 1 shown is equivalent to a cross-sectional view through Figure 1 The left-right cross-sectional view of the center of the light emitting element chip 2, the light emitting element wiring 9 and the mounting portion electrode 13C is shown. Figure 1 and Figure 2 As shown, the reflective optical semiconductor device of this embodiment is configured such that a light-receiving element chip 1 having a through-hole 14 and a light-emitting element chip 2 disposed within the through-hole 14 are mounted on a mounting portion 3. A light-receiving element array 5 consisting of a plurality of light-receiving elements 4 is disposed on the light-receiving element chip 1. The light-receiving elements 4 can be, for example, photodiodes. The cathode or anode of the photodiode is connected to a light-receiving element electrode 6 disposed on the upper surface (light-receiving surface) of the light-receiving element chip 1 via wiring or the like (not shown).

[0040] A light-emitting element is arranged on the light-emitting element chip 2. The light-emitting element can be composed of, for example, a light-emitting diode. A light-emitting portion 7 that emits light and a light-emitting element electrode 8 connected to the cathode of the light-emitting diode are arranged on the upper surface (light-emitting surface) of the light-emitting element chip 2, and a light-emitting element electrode 8A connected to the anode of the light-emitting diode is arranged on the lower surface (mounting surface) of the light-emitting element chip 2. The light-emitting element electrode 8 is connected to the light-emitting element wiring 9 arranged on the light-receiving surface of the light-receiving element chip 1 through a metal wire 10. The metal wire 10 is formed in a position and shape that does not block the light emitted from the light-emitting portion 7 of the light-emitting element chip 2. For example, as an example, the metal wire 10 is not arranged in an area within ±60° of the light-emitting angle. In addition, the light-emitting element electrode 8A arranged on the mounting surface of the light-emitting element chip 2 is connected to the mounting portion electrode 13C arranged in the through hole 14 through a conductive member 11 such as silver paste, and the light-emitting element chip 2 is mounted on the mounting portion 3.

[0041] like Figure 1 As shown, the mounting portion electrode 13C is configured so that a portion is exposed on the mounting portion 3 and continues into the through hole 14, and an end portion is arranged in the through hole 14 that is larger than the mounting surface of the light-emitting element chip 2. The mounting portion electrode 13C thus configured is connected to the light-emitting element electrode 8A on the mounting surface of the light-emitting element chip 2 by the conductive member 11. Figure 1 As shown, since the mounting portion electrode 13C is arranged below the light receiving element chip 1 , the light receiving element chip 1 is bonded to the mounting portion 3 and a portion of the mounting portion electrode 13C by the insulating member 12 serving as an adhesive material, and is mounted on the mounting portion 3 .

[0042] The conductive member 11 may be affected by the external air and may be vulcanized or migrated, so it is not preferable to expose it to the external air. Figure 2As shown, the light receiving element chip 1 is mounted on the mounting portion 3 and a portion of the mounting portion electrode 13C formed of an organic substrate or the like by bonding the insulating member 12 thereto, and the insulating member 12 covers the conductive member 11 .

[0043] In this configuration, the insulating member 12 functions as an adhesive bonding the light-receiving element chip 1 and the mounting portion 3, and is selected from a material that also functions as a coating material for the conductive member 11. For example, it can be selected from epoxy resins, phenolic resins, polyimides, and the like. In particular, when the conductive member is a silver-containing material such as silver paste, it is preferable to select a material that is impermeable to sulfide gases to prevent silver sulfidation. Specifically, a fluororesin is preferably selected that is not only impermeable to sulfide gases but also has the adhesiveness to change shape to cover the conductive member 11, the quick-drying and heat-resistant properties required for the manufacturing process of a reflective optical semiconductor device, and a non-adhesive surface that resists the adhesion of dust and dirt after curing.

[0044] The insulating member 12 is applied in a paste state and dried and solidified, and the light-receiving element chip 1 is adhesively mounted on the mounting portion 3. Generally, in a reflective optical sensor, it is preferable to configure the distance from the light-emitting element to the reflector to be equal to the distance from the reflector to the light-receiving element to improve sensing accuracy. Therefore, it is preferable that the light-receiving surface of the light-receiving element chip 1 and the light-emitting surface of the light-emitting element chip 2 of the reflective optical semiconductor device, when mounted on the mounting portion 3, are the same height (in other words, the height direction position of the upper surface of the light-receiving element chip 1 is the same as the height direction position of the upper surface of the light-receiving element chip 2). It is preferable that the mounting is performed so that the difference between the height direction position of the upper surface of the light-receiving element chip 1 and the height direction position of the upper surface of the light-emitting element chip 2 is at least 40 μm or less.

[0045] Mounting portion 3 is provided with mounting portion electrodes 13, and each mounting portion electrode 13 is connected to either the light-receiving element electrode 6 or the light-emitting element wiring 9 via a metal wire 10. The metal wire 10 connecting either the light-receiving element electrode 6 or the light-emitting element wiring 9 to the mounting portion electrode 13 may be sealed with, for example, epoxy resin.

[0046] As described above, the reflective optical semiconductor device of this embodiment is configured such that the conductive member 11 in the through hole 14 is covered by the insulating member 12 for mounting the light receiving element chip 1 on the mounting portion 3. Therefore, there is no need for Figure 11As described in the foregoing, the conductive member 11 is covered with the coating resin 16 discharged from the dispenser 15 disposed on the light-emitting surface side of the light-emitting element chip 2 into the through-hole 14. This eliminates the risk of the light-emitting surface of the light-emitting element chip 2 being covered with the coating resin 16. Therefore, the reflective optical semiconductor device of this embodiment is configured as a reflective optical semiconductor device in which the light-emitting surface of the light-emitting element chip 2 is exposed without being covered with the coating resin or the like. This prevents light emitted from the light-emitting element chip 2 from diffusing, resulting in highly symmetrical directivity, a narrow directivity angle, and excellent directivity characteristics.

[0047] Figure 3 Is configured in Figure 1 1 is a diagram showing the directional characteristics of the light emitting element of the light emitting element chip 2 in the reflective optical semiconductor device according to the first embodiment. Figure 3 The directional characteristic diagram shown is a diagram showing the diffusion of light emitted from the center of the light emitting unit 7 in terms of relative brightness (relative luminosity) at each angle. The numerical value on the circumference of the semicircle represents the angle of the emitted light, and the straight line portion representing the radius of the semicircle represents the relative luminosity, with the brightness of the brightest portion represented as 100% relative luminosity. Figure 3 In FIG. 1 , the solid line indicates the directional characteristics of the light emitting element of this embodiment in which the light emitting surface of the light emitting element chip is not coated with resin, and the dotted line indicates the directional characteristics of the light emitting element in which the light emitting surface of the light emitting element chip is coated with resin as a comparative example. Figure 3 As shown, it can be seen that the light emitting element of this embodiment has better symmetry of directivity, narrower directivity angle, and better directivity characteristics than the comparative example.

[0048] (Method for Manufacturing a Reflective Optical Semiconductor Device)

[0049] Next, as another aspect of the present invention, an embodiment of a method for manufacturing a reflective optical semiconductor device will be described. Figures 4 to 7 is an explanatory diagram of one embodiment of a method for manufacturing a reflective optical semiconductor device of the present invention, and Figure 2 Likewise, it is equivalent to passing through Figure 1 The left-right cross-sectional view of the center of the light emitting element chip 2, the light emitting element wiring 9 and the mounting portion electrode 13C of the reflective optical semiconductor device shown in FIG. Figure 4As shown, a mounting portion 3, such as an organic substrate, having mounting electrodes 13 and 13C formed thereon is prepared. A light-emitting element chip 2 is mounted on mounting electrode 13C, which forms the mounting portion 3 of a reflective optical semiconductor device, using a conductive member 11. The light-emitting element chip 2 can be, for example, a light-emitting diode. A light-emitting portion 7 that emits light and a light-emitting element electrode 8 connected to the cathode of the light-emitting diode are arranged on the upper surface (light-emitting surface) of the light-emitting element chip 2. A light-emitting element electrode 8A connected to the anode of the light-emitting diode is arranged on the lower surface (mounting surface) of the light-emitting element chip 2. Light-emitting element electrode 8A is connected to mounting electrode 13C using a conductive member 11, such as silver paste, and the light-emitting element chip 2 is mounted on the mounting portion 3.

[0050] Next, if Figure 5 As shown, an insulating member 12 is applied using a dispenser or the like on the mounting portion 3 where the light-emitting element chip 2 is mounted and the mounting portion electrode 13C where the light-receiving element chip is arranged. The thickness of the applied insulating member 12 is preferably set so that when the light-receiving element chip is placed on the insulating member 12, the height direction position of the upper surface (light-receiving surface) of the light-receiving element chip is higher than the height direction position of the upper surface (light-emitting surface) of the light-emitting element chip 2. In addition, in the process described later, since the conductive member 11 is covered by the insulating member 12, the thickness of the insulating member 12 in the area surrounding the through hole when the light-receiving element chip is mounted is set to include the thickness of the insulating member 12 required to cover the conductive member 11.

[0051] Next, if Figure 6 As shown in FIG. 1 , the light receiving element chip 1 is placed on the insulating member 12. Figure 1 As shown, a light receiving element array 5 consisting of a plurality of light receiving elements 4 is arranged on the upper surface (light receiving surface) of the light receiving element chip 1. The light receiving element 4 can be composed of a photodiode, for example. The light receiving element electrode 6 connected to the cathode or anode of the photodiode is arranged on the light receiving surface of the light receiving element chip 1. A light emitting element wiring 9 connected to the light emitting element electrode 8 is also arranged on the light receiving surface of the light receiving element chip 1. In addition, the light receiving element chip 1 has a through hole 14, and the light receiving element chip 1 is placed on the insulating member 12 in such a manner that the light emitting element chip 2 is arranged in the through hole 14. At this time, it is preferred that the height direction position of the upper surface of the light receiving element chip 1 is higher than the height direction position of the upper surface of the light emitting element chip 2.

[0052] Next, if Figure 7As shown, pressure is applied from the upper surface of the light-receiving element chip 1, and the insulating member 12 is pressed by the light-receiving element chip 1, thereby applying pressure to the insulating member 12. At this time, the insulating member 12 is in a fluid state before solidification. As a result, the insulating member 12 is squeezed out from between the light-receiving element chip 1 and the mounting portion 3, etc. to the surrounding area. The insulating member 12 squeezed into the through hole 14 covers the surface of the conductive member 11. If, after pressing the light-receiving element chip 1, the height direction position of the upper surface of the light-receiving element chip 1 is made the same as the height direction position of the upper surface of the light-emitting element chip 2, when used as a reflective light sensor, the distance from the light-emitting element of the light-emitting element chip 2 to the reflector is equal to the distance from the reflector to the light-receiving element of the light-receiving element chip 1, which is preferable from the perspective of sensing accuracy. Thus, it is preferable to make the height direction position of the upper surface of the light-receiving element chip 1 the same as the height direction position of the upper surface of the light-emitting element chip 2, but it is preferable to install it so that at least the height difference between the height direction position of the upper surface of the light-receiving element chip 1 and the height direction position of the upper surface of the light-emitting element chip 2 is less than 40μm. Figure 7 In the embodiment, the thickness of the light-emitting element wiring 9 and the light-emitting element electrode 8 is approximately 1 μm or less. In contrast, the thickness of the light-receiving element chip 1 and the light-emitting element chip 2 is over 300 μm, making the thickness of the light-emitting element wiring 9 and the light-emitting element electrode 8 negligibly thin. This does not pose a problem even if the top surface of the light-receiving element chip 1 is positioned lower in height than the top surface of the light-emitting element chip 2.

[0053] Thereafter, the insulating member 12 is dried and cured in a thermostatic chamber, and the light receiving element chip 1 is mounted on the mounting portion 3 .

[0054] By forming the conductive member 11 connecting the light-emitting element electrode 8A of the light-emitting element chip 2 to the mounting portion electrode 13C, the insulating member 12 is covered. With this structure, the insulating member 12 functions as an adhesive for bonding the light-receiving element chip 1 and the mounting portion 3, while also serving as a coating material for the conductive member 11. Therefore, a material having both functions can be selected. For example, it can be selected from epoxy resins, phenolic resins, polyimides, and the like. In particular, when the conductive member is a silver-containing material such as silver paste, it is preferable to select a material that is impermeable to sulfide gases in order to prevent the sulfidation of the silver. Specifically, a fluororesin that is not only impermeable to sulfide gases but also has the adhesiveness to change shape in order to cover the conductive member 11, the quick-drying and heat-resistant properties required for the manufacturing process and reflective optical semiconductor devices, and a non-adhesive surface that does not adhere to dust and dirt after curing is preferred.

[0055] The light-emitting element electrode 8 is connected to the light-emitting element wiring 9 disposed on the light-receiving surface of the light-receiving element chip 1 by a metal wire 10. The metal wire 10 is formed in a position and shape so as not to block the light emitted from the light-emitting portion 7 of the light-emitting element chip 2. For example, as an example, the metal wire 10 is not disposed within the region within ±60° of the light-emitting angle. By disposing the metal wire 10 in this manner, the light emitted from the light-emitting portion 7 is not blocked by the metal wire 10, and degradation of the directional characteristics due to the metal wire 10 can be prevented.

[0056] The light receiving element electrode 6 and the light emitting element wiring 9 are connected to the mounting portion electrodes 13 arranged on the mounting portion 3 by metal wires 10, forming Figure 1 The metal wire 10 connecting either the light-receiving element electrode 6 or the light-emitting element wiring 9 to the mounting portion electrode 13 may be sealed with, for example, epoxy resin or the like.

[0057] As described above, the manufacturing method of the reflective optical semiconductor device of this embodiment is as follows. Figure 11 As described in [1], the conductive member 11 can be coated without using a method of dispensing coating resin into the through-hole 14 from a dispenser positioned on the light-emitting surface side of the light-emitting element chip 2. Consequently, the light-emitting surface of the light-emitting element chip 2 is not covered with the coating resin, and the light emitted from the light-emitting element chip 2 is not diffused, resulting in improved symmetry of directivity. This allows for the simple formation of a reflective optical semiconductor device with a narrow directivity angle and excellent directivity characteristics. Furthermore, the conductive resin 11 can be reliably coated, allowing for the simple formation of a highly reliable reflective optical semiconductor device.

[0058] As mentioned above, the reflective optical semiconductor device and the manufacturing method thereof according to the present invention have been described. However, the present invention is of course not limited to the above-described embodiment and implementation scheme.

[0059] (Summarize)

[0060] (1) One embodiment of a reflective optical semiconductor device as one mode of the present invention is a reflective optical semiconductor device comprising: a light-emitting element chip comprising a light-emitting element and a light-emitting element electrode; a light-receiving element chip comprising a light-receiving element, a light-receiving element electrode, a light-receiving element wiring connected to the light-emitting element electrode, and a through hole for configuring the light-emitting element chip; and a mounting portion comprising a mounting portion electrode connected to any one of the light-emitting element electrode, the light-receiving element electrode, and the light-receiving element wiring, wherein the light-receiving element chip comprises a mounting portion electrode connected to the light-receiving element electrode, the light-receiving element electrode, and the light-receiving element wiring on a light-receiving surface. The wiring is mounted on the above-mentioned mounting portion using an insulating component, the above-mentioned light-emitting element chip is respectively provided with the above-mentioned light-emitting element electrodes on the light-emitting surface and the mounting surface, the above-mentioned light-emitting element electrode on the above-mentioned mounting surface is connected to the above-mentioned mounting portion electrode arranged in the above-mentioned through hole using a conductive component and is mounted on the above-mentioned mounting portion, the above-mentioned conductive component is covered by the above-mentioned insulating component for mounting the above-mentioned light-receiving element chip on the above-mentioned mounting portion, the above-mentioned light-emitting element electrode on the above-mentioned light-emitting surface of the above-mentioned light-emitting element chip is connected to the above-mentioned light-emitting element wiring using a metal wire, and the above-mentioned light-receiving element electrode and the above-mentioned light-emitting element wiring are respectively connected to the above-mentioned mounting portion electrode using metal wires.

[0061] According to the reflective optical semiconductor device of embodiment (1) above, a reflective optical semiconductor device with excellent directional characteristics and high reliability can be provided, in which the conductive member is reliably covered by the insulating member, the light-emitting surface of the light-emitting element chip is not covered by the coating resin, etc.

[0062] (2) According to another embodiment, in the reflective optical semiconductor device of (1) above, the conductive member includes silver, and the insulating member is made of a material that is impermeable to sulfide gas.

[0063] According to the reflective optical semiconductor device of the embodiment (2) above, sulfurization of the conductive member containing silver can be prevented, and a highly reliable reflective optical semiconductor device can be provided.

[0064] (3) As another embodiment of the present invention, an embodiment of a method for manufacturing a reflective optical semiconductor device comprises the following steps: a first step, in which a light-emitting element electrode arranged on the mounting surface is connected to the mounting portion electrode of the mounting portion by using a conductive member, and a light-emitting element chip having the above-mentioned light-emitting element and the light-emitting surface and the light-emitting element electrode on the above-mentioned mounting portion is mounted on the above-mentioned mounting portion; a second step, in which an insulating member is applied to a region of the above-mentioned mounting portion where the light-receiving element chip is arranged; a third step, in which the above-mentioned light-receiving element chip having the light-receiving element, the light-receiving element electrode, the light-receiving element wiring connected to the above-mentioned light-receiving element electrode, and the through hole is placed on a substrate coated with the insulating member in such a manner that the light-receiving element chip is arranged in the through hole. the mounting portion of the component; a fourth process, in which the insulating member is pressed by the light-receiving element chip, the insulating member is extruded from between the light-receiving element chip and the mounting portion, and the conductive member exposed in the through-hole is covered with the extruded insulating member; a fifth process, in which the insulating member is cured and the light-receiving element chip is mounted on the mounting portion; and a sixth process, in which the light-emitting element electrode arranged on the light-emitting surface of the light-receiving element chip is connected to the light-receiving element wiring arranged on the light-receiving surface of the light-receiving element chip by using a metal wire, and the light-emitting element wiring and the light-receiving element electrode arranged on the light-receiving surface of the light-receiving element chip are respectively connected to the mounting portion electrode by using a metal wire.

[0065] According to the manufacturing method of the reflective optical semiconductor device of the above-mentioned implementation scheme (3), the insulating component is squeezed out by pressing the light-receiving element chip, and the conductive component can be covered with the squeezed insulating component, so that a reflective optical semiconductor device with excellent directional characteristics and high reliability can be easily manufactured.

[0066] (4) According to another embodiment, in the method for manufacturing a reflective optical semiconductor device according to (3) above, the conductive member includes silver, and the insulating member is made of a material that is impermeable to sulfide gas.

[0067] According to the method for manufacturing a reflective optical semiconductor device of the embodiment (4) above, sulfurization of the conductive member containing silver can be prevented, and a reflective optical semiconductor device with high reliability can be provided.

[0068] (5) According to another embodiment, based on the manufacturing method of the reflective optical semiconductor device of the above-mentioned (3) or (4), it is configured that in the above-mentioned fourth step, the above-mentioned light-receiving element chip presses the above-mentioned insulating member until the height direction position of the upper surface of the above-mentioned light-receiving element chip is consistent with the height direction position of the upper surface of the above-mentioned light-emitting element chip.

[0069] According to the manufacturing method of the reflective optical semiconductor device of the implementation scheme (5) above, the distance from the light emitted from the light-emitting element to the reflector and the distance from the light reflected by the reflector to the light-receiving element can be made equal, and a reflective optical semiconductor device constituting a reflective optical sensor with improved sensing accuracy can be provided.

[0070] (6) According to another embodiment, based on the manufacturing method of the reflective optical semiconductor device of the above-mentioned (3) or (4), the above-mentioned metal wire connecting the above-mentioned light-emitting element electrode and the above-mentioned light-emitting element wiring in the above-mentioned sixth step is configured so as not to block the light emitted from the above-mentioned light-emitting element.

[0071] According to the method for manufacturing a reflective optical semiconductor device of the embodiment (6) above, light emitted from the light emitting portion is not blocked by the metal wire, and degradation of the directional characteristics due to the metal wire can be prevented.

[0072] Description of Reference Numerals

[0073] 1. 1A, 1B, light-receiving element chip; 2. light-emitting element chip; 3. 3A, 3B, mounting portion; 4. light-receiving element; 5. light-receiving element array; 6. light-receiving element electrode; 7. light-emitting portion; 8. 8A, light-emitting element electrode; 9. 9A, light-emitting element wiring; 10. metal wire; 11. conductive component; 12. insulating component; 13. 13A, 13B, 13C, mounting portion electrode; 14. through hole; 15. distributor; 16. coating resin.

Claims

1. A reflective optical semiconductor device comprising: A light-emitting element chip comprising a light-emitting element and a light-emitting element electrode; a light-receiving element chip including a light-receiving element, a light-receiving element electrode, a light-emitting element wiring connected to the light-emitting element electrode, and a through hole for arranging the light-emitting element chip; and The mounting portion is provided with a mounting portion electrode connected to any one of the light emitting element electrode, the light receiving element electrode, and the light emitting element wiring, wherein: The light receiving element chip has the light receiving element electrode and the light emitting element wiring arranged on the light receiving surface. The light receiving element chip is mounted on the mounting portion using an insulating member. The light-emitting element chip is provided with the light-emitting element electrodes on the light-emitting surface and the mounting surface, respectively. The light-emitting element electrodes on the mounting surface are connected to the mounting portion electrodes arranged in the through-holes by a conductive member and are mounted on the mounting portion. The conductive member is covered by the insulating member that mounts the light-receiving element chip on the mounting portion. The light emitting element electrode on the light emitting surface of the light emitting element chip is connected to the light emitting element wiring by a metal wire. The light-receiving element electrode and the light-emitting element wiring are respectively connected to the mounting portion electrode by metal wires.

2. The reflective optical semiconductor device according to claim 1, wherein The conductive member includes silver, and the insulating member is made of a material that is impermeable to sulfide gas.

3. A method for manufacturing a reflective optical semiconductor device, comprising the following steps: A first step of connecting a light-emitting element electrode disposed on the mounting surface to a mounting portion electrode of the mounting portion using a conductive member to mount a light-emitting element chip including the light-emitting element and the light-emitting surface and the light-emitting element electrode on the mounting surface on the mounting portion; a second step of applying an insulating member to a region of the mounting portion where the light receiving element chip is to be disposed; a third step of placing the light-receiving element chip, which includes a light-receiving element, a light-receiving element electrode, a light-emitting element wiring connected to the light-receiving element electrode, and a through-hole, on the mounting portion coated with the insulating member so that the light-emitting element chip is arranged in the through-hole; a fourth step of pressing the insulating member with the light receiving element chip to squeeze the insulating member out from between the light receiving element chip and the mounting portion, and covering the conductive member exposed in the through hole with the squeezed insulating member; a fifth step of curing the insulating member and mounting the light receiving element chip on the mounting portion; and The sixth step is to connect the light-emitting element electrode arranged on the light-emitting surface of the light-emitting element chip to the light-emitting element wiring arranged on the light-receiving surface of the light-receiving element chip using a metal wire, and to connect the light-emitting element wiring and the light-receiving element electrode arranged on the light-receiving surface of the light-receiving element chip to the mounting portion electrode respectively using a metal wire.

4. The method for manufacturing a reflective optical semiconductor device according to claim 3, wherein: The conductive member includes silver, and the insulating member is made of a material that is impermeable to sulfide gas.

5. The method for manufacturing a reflective optical semiconductor device according to claim 3 or 4, wherein: In the fourth step, the light receiving element chip presses the insulating member until the height position of the upper surface of the light receiving element chip coincides with the height position of the upper surface of the light emitting element chip.

6. The method for manufacturing a reflective optical semiconductor device according to claim 3 or 4, wherein: The metal wire connecting the light emitting element electrode and the light emitting element wiring in the sixth step is arranged so as not to block light emitted from the light emitting element.

Images