Manufacturing method of anti-seismic sensor of high-precision inclinometer

Abstract

The invention relates to the technical field of sensor manufacturing, in particular to a high-precision inclinometer anti-seismic sensor manufacturing method which comprises the steps of providing a basic support body, forming a gradient elastic modulus buffer layer, preparing a sensitive element layer, carrying out surface modification treatment, forming a protective cover, releasing stress and the like. The stress is dispersed through the gradient design of the buffer layer and the micro-channel structure, the performance of the sensitive element is enhanced by utilizing the nanoscale micropores and the conductive polymer, and the shock resistance and durability are improved by adopting the flexible connecting piece and the anti-corrosion coating. The process is further optimized by an ultrasonic vibration and chemical dissolution method. The anti-seismic performance and reliability of the sensor can be remarkably improved, and meanwhile the production cost is reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of sensor manufacturing, and in particular to a method for manufacturing a high-precision inclinometer anti-vibration sensor. Background Art

[0002] In high-precision inclinometer applications, seismic performance significantly impacts measurement accuracy and device reliability. Existing sensor manufacturing methods have limitations in terms of seismic performance, structural design optimization, and cost control, restricting their performance in complex environments.

[0003] A search revealed patent publication number CN103420328B, dated June 1, 2016, involving an AMR MEMS manufacturing method. This technology sequentially forms a SiN film layer, an AMR material layer, and a metal layer on a silicon wafer, using etching and deposition processes to create contact holes, resulting in a highly sensitive magnetoresistive sensor. However, this method focuses on optimizing electrical performance and lacks specific design considerations for seismic resistance. Furthermore, the stress matching issue between the multiple layers of material is not adequately addressed, potentially leading to performance fluctuations in the sensor under vibration or shock, thus affecting measurement accuracy.

[0004] Furthermore, patent publication number CN103515231B, dated December 7, 2016, discloses a FinFET manufacturing method. This technology etches trenches in a semiconductor substrate and fills them with a stress material to form a fin structure, thereby improving carrier mobility and drive current. While this approach has demonstrated outstanding performance in optimizing microelectronic device performance, its manufacturing process places high demands on material stress control and lacks design for seismic resistance. This makes it difficult to maintain the structural stability of the sensor in high vibration or impact environments, potentially leading to the risk of mechanical fatigue or failure.

[0005] The above analysis shows that existing technologies still have room for improvement in terms of optimizing seismic performance, structural stability design, and process simplification. Therefore, this paper proposes a novel method for manufacturing a high-precision seismic sensor for an inclinometer. By optimizing structural design and material selection, this method improves seismic performance and reliability while also balancing production costs, meeting the requirements for high-precision measurements in complex environments. Summary of the Invention

[0006] The purpose of the present invention is to provide a method for manufacturing a high-precision inclinometer seismic sensor. Through the manufacturing method provided by the present invention, the seismic resistance and structural stability of the sensor can be improved, while the process complexity is optimized and the production cost is reduced.

[0007] To solve the above technical problems, the present invention provides a method for manufacturing a high-precision inclinometer anti-seismic sensor, which comprises at least the following steps:

[0008] Providing a basic support body;

[0009] forming a buffer layer on the base support, wherein the buffer layer is made of a composite material having a gradient elastic modulus characteristic;

[0010] forming a sensitive element layer on the buffer layer, wherein the sensitive element layer is made of a high-sensitivity piezoelectric ceramic material;

[0011] Performing surface modification on the sensitive element layer, wherein the surface modification includes introducing a nano-scale microporous structure on the surface of the sensitive element layer and filling it with a conductive polymer material;

[0012] forming a protective cover on the sensitive element layer, wherein the protective cover and the sensitive element layer are mechanically coupled via a flexible connector;

[0013] Using ultrasonic vibration to perform stress relief treatment on the protective cover to eliminate residual stress generated during the processing;

[0014] The buffer layer is removed to expose the surface of the base support body.

[0015] Furthermore, the buffer layer includes a multi-layer composite structure, and the elastic modulus of each layer of material changes gradiently along the thickness direction. The side close to the base support body uses a high elastic modulus material, and the side away from the base support body uses a low elastic modulus material.

[0016] Furthermore, the buffer layer also includes an embedded microchannel structure, and the microchannel structure is used to guide stress distribution and reduce stress concentration.

[0017] Furthermore, the surface modification of the sensitive element layer is achieved by a laser etching process, wherein an ultraviolet laser with a nanosecond pulse width is used in the laser etching process.

[0018] Furthermore, the conductive polymer material includes any one or more combinations of polypyrrole, polyaniline or polythiophene, and is filled into the nanoscale microporous structure by in-situ polymerization.

[0019] Furthermore, before forming the protective cover, the sensitive element layer is heat-treated, with the heat treatment temperature controlled between 150° C. and 250° C., and the time being 1 hour to 3 hours.

[0020] Furthermore, the flexible connector is made of shape memory alloy material, and its shape memory property is used to compensate for deformation caused by external impact.

[0021] Furthermore, the outer surface of the protective cover is coated with an anti-corrosion coating, and the anti-corrosion coating is composed of a fluoride-based material.

[0022] Furthermore, when ultrasonic vibration is used for stress release treatment, the ultrasonic frequency range is 20 kHz to 40 kHz, and the amplitude range is 10 μm to 50 μm.

[0023] Furthermore, the removal process of the buffer layer is achieved by a chemical dissolution method, the dissolving solution comprises a mixture of sodium hydroxide solution and ethanol, and the temperature during the dissolution process is controlled between 30° C. and 50° C.

[0024] In summary, the present invention provides a method for manufacturing a high-precision inclinometer anti-seismic sensor, which improves the structural design and manufacturing process of the sensor. The technical features of this application are that the gradient elastic modulus design of the buffer layer combined with the embedded microchannel structure can effectively disperse the external impact force and reduce the influence of stress concentration on the sensitive element layer; the nanoscale microporous structure and conductive polymer filling on the surface of the sensitive element layer enhance its mechanical strength and conductivity; the shape memory characteristics of the flexible connector provide additional deformation recovery ability under the action of external force; the anti-corrosion coating of the protective cover further improves the durability of the sensor in harsh environments. In addition, the stress release treatment of ultrasonic vibration significantly reduces the influence of residual stress on the performance of the sensor, and the process of removing the buffer layer by chemical dissolution is gentle and controllable, avoiding damage to the sensitive element layer. The above technical means work together to enable the sensor to exhibit higher anti-seismic performance and reliability in complex environments, while simplifying the manufacturing process and reducing production costs. Of course, any product implementing the present invention does not necessarily need to achieve all of the advantages described above at the same time. Description of the drawings

[0025] Figure 1 Schematic diagram of the structure of a method for manufacturing a high-precision inclinometer anti-seismic sensor in an embodiment of the present invention.

[0026] Figure: 1. Base support; 2. Buffer layer; 3. Sensitive element layer; 4. Protective cover; 5. Flexible connector; 6. Microchannel structure; 7. Nanoscale microporous structure; 8. Anti-corrosion coating DETAILED DESCRIPTION

[0027] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0028] The present invention provides a method for manufacturing a high-precision inclinometer anti-seismic sensor, Figure 1 The structural diagram shown in the figure is explained in detail. Figure 1In the figure, reference numeral 1 represents a base support, 2 represents a buffer layer, 3 represents a sensitive element layer, 4 represents a protective cover, 5 represents a flexible connector, 6 represents a microchannel structure, 7 represents a nanoscale microporous structure, and 8 represents an anti-corrosion coating. The following describes the specific implementation process step by step, and elaborates on the connection, positional relationship, and coordination between the various components.

[0029] First, a basic support body 1 is provided. The basic support body 1 is the core bearing component of the entire sensor. Its material is selected from high-strength aluminum alloy to ensure the rigidity and stability of the overall structure. The surface of the basic support body 1 is precision machined to form a smooth working surface for the subsequent preparation of the buffer layer 2. The buffer layer 2 is formed on the basic support body 1 by a coating or deposition process, and its thickness is controlled between 1 mm and 3 mm. The buffer layer 2 is prepared using a composite material with gradient elastic modulus characteristics. A high elastic modulus material such as epoxy resin is used on the side close to the basic support body 1, and a low elastic modulus material such as silicone rubber is used on the side away from the basic support body 1. This gradient design can effectively disperse external impact forces and reduce stress concentration. At the same time, the buffer layer 2 is embedded with microchannel structures 6. These microchannel structures 6 are distributed in a mesh shape, with a channel width of 0.5 mm to 1 mm and a depth of 0.3 mm to 0.8 mm, which are used to guide stress distribution and further reduce the risk of local stress concentration.

[0030] A sensitive element layer 3 is formed on the buffer layer 2. The sensitive element layer 3 is made of a highly sensitive piezoelectric ceramic material and has a thickness of 0.2 mm to 0.5 mm. The sensitive element layer 3 is tightly bonded to the buffer layer 2 through a hot pressing process to ensure that the interface between the two is seamless and has good mechanical coupling performance. The surface of the sensitive element layer 3 needs to be modified by a laser etching process. The surface is processed using an ultraviolet laser with a nanosecond pulse width to introduce a nanoscale microporous structure 7 on the surface of the sensitive element layer 3. These nanoscale microporous structures 7 have a diameter ranging from 50 nm to 200 nm and a depth of 100 nm to 300 nm and are uniformly distributed on the surface of the sensitive element layer 3. Subsequently, a conductive polymer material is filled into the nanoscale microporous structure 7 by in-situ polymerization. The conductive polymer material can be selected from any one or more combinations of polypyrrole, polyaniline or polythiophene. During the filling process, the sensitive element layer 3 is first immersed in a solution containing monomers and initiators. A polymerization reaction is carried out under inert gas protection, with the reaction temperature controlled between 40°C and 60°C for 2 to 4 hours. After filling, the surface of the sensitive element layer 3 exhibits uniform conductive properties, while its mechanical strength is significantly improved.

[0031] Before forming the protective cover 4 on the sensitive element layer 3, it needs to be heat treated to eliminate internal residual stress. The heat treatment temperature is controlled between 150°C and 250°C, the time is 1 hour to 3 hours, and the heating rate is 5°C per minute to 10°C per minute. After the heat treatment is completed, the protective cover 4 is formed by a precision injection molding process and combined with the sensitive element layer 3. The protective cover 4 and the sensitive element layer 3 are mechanically coupled through a flexible connector 5. The flexible connector 5 is made of shape memory alloy material with a thickness of 0.1 mm to 0.3 mm and a width of 1 mm to 3 mm. The two ends of the flexible connector 5 are respectively fixed to the protective cover 4 and the sensitive element layer 3, and the fixing method is welding or bonding. The shape memory property of the flexible connector 5 enables it to restore its original shape after being deformed under the action of external force, thereby compensating for the displacement or deformation caused by external impact.

[0032] The outer surface of the protective cover 4 is coated with an anti-corrosion coating 8, which is composed of a fluoride-based material and has a thickness of 0.05 mm to 0.1 mm. During the coating process, the surface of the protective cover 4 is first cleaned to remove oil and impurities. The fluoride-based material is then evenly applied to the surface of the protective cover 4 by spraying or dipping. Finally, the coating is cured at 100°C to 150°C for 1 to 2 hours. The provision of the anti-corrosion coating 8 significantly improves the durability of the sensor in harsh environments and prevents performance degradation caused by corrosion.

[0033] After the protective cover 4 is formed, it undergoes stress relief treatment using ultrasonic vibration to eliminate residual stress generated during the machining process. The ultrasonic vibration equipment has a frequency range of 20kHz to 40kHz, an amplitude range of 10μm to 50μm, and a treatment time of 10 to 30 minutes. During the ultrasonic vibration process, the protective cover 4 is fixed to a dedicated fixture. The fixture is designed to ensure that the vibration energy is evenly transmitted to all parts of the protective cover 4. After the stress relief treatment is completed, the internal residual stress of the protective cover 4 is significantly reduced, thereby improving the overall reliability of the sensor.

[0034] Finally, the buffer layer 2 is removed to expose the surface of the base support 1. The removal process of the buffer layer 2 is achieved by a chemical dissolution method, and the dissolving liquid contains a sodium hydroxide solution with a mass fraction of 5% to 10% and an ethanol mixture with a volume fraction of 20% to 30%. During the dissolution process, the temperature is controlled between 30°C and 50°C, and the time is 1 hour to 2 hours. After the dissolution is completed, the base support 1 is washed with deionized water and dried at 60°C for 1 hour to 2 hours. The mildness and controllability of the chemical dissolution method ensure that the sensitive element layer 3 will not be damaged, while the surface of the base support 1 can remain flat and clean.

[0035] In the above-described manufacturing method, the base support body 1 serves as the load-bearing core of the entire sensor. Its combination with the buffer layer 2 provides preliminary seismic resistance. The microchannel structure 6 within the buffer layer 2, combined with the gradient elastic modulus design, effectively disperses external impact forces and reduces local stress concentration. The nanoscale microporous structure 7 formed by laser etching in the sensor layer 3 and the conductive polymer filling enhance its mechanical strength and conductivity. The protective cover 4 is mechanically coupled to the sensor layer 3 via a flexible connector 5. The shape memory properties of the flexible connector 5 provide additional deformation recovery under external forces. The anti-corrosion coating 8 on the outer surface of the protective cover 4 further enhances the sensor's durability in harsh environments. Ultrasonic vibration stress relief significantly reduces the impact of residual stress on sensor performance, while chemical dissolution removes the buffer layer 2 in a gentle and controllable process, avoiding damage to the sensor layer 3. This series of technical measures works together to ensure that the sensor exhibits higher seismic resistance and reliability in complex environments, while simplifying the manufacturing process and reducing production costs.

[0036] In order to better enable relevant personnel in this technical field to fully understand and implement the present invention, the specific implementation principle of the present invention is supplemented below with reference to a specific application scenario.

[0037] In practical applications, this high-precision inclinometer seismic sensor can be widely used for tilt measurement in complex environments such as geological exploration, construction engineering monitoring, and aerospace. Taking earthquake monitoring in geological exploration as an example, the sensor needs to maintain high-precision measurement performance under strong vibration and shock environments. Figure 1 The structural diagram shown in the figure explains in detail its operating principle and implementation process.

[0038] First, when installing the sensor, the base support body 1 is firmly mounted on the base of the monitoring equipment by bolts or other fixing methods. The base support body 1 is made of high-strength aluminum alloy to ensure that it has sufficient rigidity and stability in complex environments. The buffer layer 2 is formed on the surface of the base support body 1 through a coating or deposition process, and its gradient elastic modulus design can effectively disperse external impact forces. For example, when an earthquake occurs, the stress generated by ground vibration will be transmitted to the buffer layer 2 through the base support body 1. The microchannel structure 6 in the buffer layer 2 is distributed in a mesh shape, and these channels can guide the stress to diffuse along a specific path, thereby avoiding the occurrence of stress concentration. This design significantly reduces the risk of damage to the sensitive element layer 3 due to external impact.

[0039] When an external impact acts on the sensor, the nanoscale microporous structure 7 formed on the surface of the sensitive element layer 3, the core detection component, through laser etching, plays a vital role. These micropores not only increase the surface area of ​​the sensitive element layer 3 but also, by filling it with a conductive polymer material, enhance its mechanical strength and electrical conductivity. During actual measurement, the piezoelectric ceramic material in the sensitive element layer 3 generates an electrical signal in response to an external force, and the change in the signal is linearly related to the change in the external inclination angle. The presence of the nanoscale microporous structure 7 significantly enhances the fatigue resistance of the sensitive element layer 3, maintaining stable measurement accuracy even in long-term vibration environments.

[0040] The protective cover 4 is mechanically coupled to the sensitive element layer 3 via a flexible connector 5, which is made of a shape-memory alloy. In earthquake monitoring scenarios, when the ground vibrates violently, the flexible connector 5 can deform under the action of external forces and quickly return to its original shape after the vibration ends, thereby compensating for the displacement or deformation caused by the external impact. This design effectively reduces the relative displacement between the internal structures of the sensor and improves the overall seismic resistance. In addition, the anti-corrosion coating 8 on the outer surface of the protective cover 4 is composed of a fluoride-based material, which can resist the invasion of corrosive media in harsh environments and extend the service life of the sensor.

[0041] During the manufacturing process, stress relief through ultrasonic vibration further enhances sensor reliability. When seismic monitoring equipment operates for extended periods, residual stress may build up within the sensor due to processing or assembly. Ultrasonic vibration treatment of the protective cover 4 at a frequency of 20kHz to 40kHz and an amplitude of 10μm to 50μm effectively eliminates these residual stresses. The vibration energy is evenly transmitted to all parts of the protective cover 4, ensuring uniform stress distribution within it and preventing structural failure due to stress concentration.

[0042] Finally, after sensor fabrication is complete, the buffer layer 2 is removed through a chemical dissolution process, exposing the surface of the base support 1. This process uses a mild mixture of sodium hydroxide solution and ethanol to ensure that the sensitive element layer 3 is not damaged. After removing the buffer layer 2, the surface of the base support 1 remains flat and clean, providing excellent foundation conditions for subsequent installation and use.

[0043] In summary, the operating principles and implementation process of the high-precision inclinometer seismic sensor provided by the present invention in complex environments are clearly demonstrated. Through the gradient elastic modulus design of the buffer layer 2 and the stress dispersion effect of the microchannel structure 6, the sensor can effectively cope with external impact forces. The nanoscale microporous structure 7 and conductive polymer filling of the sensitive element layer 3 significantly enhance its mechanical strength and conductivity. The shape memory properties of the flexible connector 5 provide additional deformation recovery under external forces. The anti-corrosion coating 8 of the protective cover 4 further enhances the durability of the sensor in harsh environments. The combined effect of these technical measures enables the sensor to exhibit higher seismic resistance and reliability in complex application scenarios such as earthquake monitoring, while also simplifying the manufacturing process and reducing production costs.

[0044] Although the present invention has been described in detail with reference to the aforementioned embodiments, it is still possible for those skilled in the art to modify the technical solutions described in the aforementioned embodiments, or to make equivalent substitutions for some of the technical features therein. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A method for manufacturing a high-precision inclinometer anti-seismic sensor, characterized in that: At least the following steps are included: Providing a basic support body (1); forming a buffer layer (2) on the base support (1), wherein the buffer layer (2) is prepared using a composite material having a gradient elastic modulus characteristic; forming a sensitive element layer (3) on the buffer layer (2), wherein the sensitive element layer (3) is made of a high-sensitivity piezoelectric ceramic material; Performing surface modification treatment on the sensitive element layer (3), wherein the surface modification treatment includes introducing a nano-scale microporous structure (7) on the surface of the sensitive element layer (3), and filling the nano-scale microporous structure (7) with a conductive polymer material; A protective cover (4) is formed on the sensitive element layer (3), and mechanical coupling is achieved between the protective cover (4) and the sensitive element layer (3) via a flexible connector (5); Performing stress relief treatment on the protective cover (4) using ultrasonic vibration; The buffer layer (2) is removed to expose the surface of the base support (1).

2. The method for manufacturing a high-precision inclinometer anti-seismic sensor according to claim 1, characterized in that: The buffer layer (2) comprises a multi-layer composite structure, the elastic modulus of each layer of material changes gradiently along the thickness direction, the side close to the base support body (1) uses a high elastic modulus material, and the side away from the base support body (1) uses a low elastic modulus material.

3. The method for manufacturing a high-precision inclinometer anti-seismic sensor according to claim 1, characterized in that: The buffer layer (2) further comprises an embedded microchannel structure (6), wherein the microchannel structure (6) has a width of 0.5 mm to 1 mm and a depth of 0.3 mm to 0.8 mm.

4. The method for manufacturing a high-precision inclinometer anti-seismic sensor according to claim 1, characterized in that: The surface modification treatment of the sensitive element layer (3) is achieved through a laser etching process, wherein an ultraviolet laser with a nanosecond pulse width is used in the laser etching process.

5. The method for manufacturing a high-precision inclinometer anti-seismic sensor according to claim 1, characterized in that: The conductive polymer material includes any one or more combinations of polypyrrole, polyaniline or polythiophene, and is filled into the nanoscale microporous structure (7) by in-situ polymerization.

6. The method for manufacturing a high-precision inclinometer anti-seismic sensor according to claim 1, characterized in that: Before forming the protective cover (4), the sensitive element layer (3) is also subjected to heat treatment, wherein the heat treatment temperature is controlled between 150° C. and 250° C., and the time is 1 hour to 3 hours.

7. The method for manufacturing a high-precision inclinometer anti-seismic sensor according to claim 1, characterized in that: The flexible connecting piece (5) is made of shape memory alloy material.

8. The method for manufacturing a high-precision inclinometer anti-seismic sensor according to claim 1, characterized in that: The outer surface of the protective cover (4) is coated with an anti-corrosion coating (8), and the anti-corrosion coating (8) is composed of a fluoride-based material.

9. The method for manufacturing a high-precision inclinometer anti-seismic sensor according to claim 1, characterized in that: When stress release treatment is performed on the protective cover (4) using ultrasonic vibration, the ultrasonic frequency range is 20 kHz to 40 kHz, and the amplitude range is 10 μm to 50 μm.

10. The method for manufacturing a high-precision inclinometer anti-seismic sensor according to claim 1, characterized in that: The removal process of the buffer layer (2) is achieved by a chemical dissolution method, wherein the dissolving solution comprises a sodium hydroxide solution with a mass fraction of 5% to 10% and an ethanol mixture with a volume fraction of 20% to 30%, and the temperature during the dissolution process is controlled between 30°C and 50°C.

Images