Compositions for polishing hard masks and related systems and methods

Abstract

The present invention relates to a system for polishing a hard mask, comprising a composition comprising permanganate ions of a permanganate oxidant; a substrate comprising a hard mask comprising at least one of a non-carbon boron component, a boron-carbon component, a non-carbon silicon component, a non-carbon chromium component, a non-carbon zirconium component, or any combination thereof; and a chemical mechanical planarization (CMP) device configured to contact the composition with the substrate so as to remove at least a portion of the hard mask of the substrate.

Description

Technical Field

[0001] The present invention relates to compositions, related systems, and related methods for polishing hardmasks. Background Art

[0002] The planarized and polished substrate can be patterned with insulating, conductive, and semiconductive materials. The resulting substrate is suitable for use in semiconductor manufacturing. Summary of the Invention

[0003] Some embodiments relate to a system comprising a composition comprising permanganate ions of a permanganate oxidizing agent; a substrate comprising a hard mask comprising at least one of a non-carbon boron component, a boron-carbon component, a non-carbon silicon component, a non-carbon chromium component, a non-carbon zirconium component, or any combination thereof; and a chemical mechanical planarization (CMP) apparatus configured to contact the composition with the substrate so as to remove at least a portion of the hard mask from the substrate.

[0004] Some embodiments relate to a method comprising one or more of the following steps: obtaining a substrate comprising a hard mask, the hard mask comprising at least one of a boron component, a silicon component, a chromium component, a zirconium component, or any combination thereof; obtaining a composition comprising permanganate ions of a permanganate oxidizer; and using a chemical mechanical planarization apparatus to bring the composition and the hard mask into sufficient contact to remove at least a portion of the hard mask.

[0005] Some embodiments relate to compositions comprising permanganate ions of a permanganate oxidizing agent. In some embodiments, the compositions remove at least a portion of a hard mask when in contact with the hard mask using chemical mechanical planarization equipment. In some embodiments, the hard mask comprises at least one of a non-carbon boron component, a boron-carbon component, a non-carbon silicon component, a non-carbon chromium component, a non-carbon zirconium component, or any combination thereof. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Some embodiments of the present disclosure are described herein by way of example only with reference to the accompanying drawings. With specific reference now to the details of the drawings, it is emphasized that the embodiments shown are by way of example and for the purpose of illustrative discussion of the embodiments of the present disclosure. In this regard, Figure 1 Together, the description allows those skilled in the art to understand how embodiments of the disclosure may be practiced.

[0007] Figure 1 is a schematic diagram of a system for polishing a hard mask according to some embodiments.

[0008] Figure 2 is a flow chart of a method for polishing a hard mask according to some embodiments. DETAILED DESCRIPTION

[0009] Among the benefits and improvements disclosed, other objects and advantages of the present invention will become apparent from the following description taken in conjunction with the accompanying drawings. Detailed embodiments of the present disclosure are disclosed herein; however, it should be understood that the disclosed embodiments are merely illustrative of the various forms in which the present disclosure can be embodied. Furthermore, each example given with respect to the various embodiments of the present disclosure is intended to be illustrative and not restrictive.

[0010] Any prior patents and publications referenced herein are incorporated by reference in their entirety.

[0011] Throughout this specification and claims, unless otherwise expressly stated herein, the following terms have the meanings explicitly associated therewith. The phrases "in one embodiment," "in an embodiment," and "in some embodiments" as used herein do not necessarily refer to the same embodiment, although they may. Furthermore, the phrases "in another embodiment" and "in some other embodiments" as used herein do not necessarily refer to different embodiments, although they may. All embodiments of the present disclosure are intended to be combinable without departing from the scope or spirit of the present disclosure.

[0012] As used herein, the term "based on" is not exclusive and allows for being based on other factors not described, unless the context clearly indicates otherwise. In addition, throughout this specification, the meanings of "a," "an," and "the" include plural referents. The meaning of "in" includes "in" and "on."

[0013] Chemical mechanical planarization (CMP) is a process in which material is removed from the surface of a substrate (such as a silicon wafer) and the surface is planarized and polished through physical processes (e.g., abrasion, etc.) and chemical processes (e.g., oxidation, chelation, etc.). To perform the CMP process, a slurry is applied to the surface of the substrate using a CMP apparatus configured to perform the removal, planarization, and polishing processes. To be suitable for polishing applications, a slurry should exhibit suitable performance in terms of selectivity and removal rate while providing a certain degree of control and adjustability. The slurry should also be adjustable in terms of operating pH range, type of polishing pad, etc. When the material to be removed from the surface of the substrate is a hard material (or hard mask), conventional slurries cannot meet the performance requirements for polishing such materials.

[0014] The embodiments disclosed herein provide compositions that at least overcome the aforementioned challenges and disadvantages. For example, some embodiments relate to compositions comprising permanganate ions of a permanganate oxidizing agent. The compositions disclosed herein can be used to polish hardmasks using chemical mechanical planarization equipment. The compositions disclosed herein can exhibit excellent polishing performance in terms of selectivity and removal rate, while also providing control and adjustability with respect to the operating pH range, polishing pad type, and the like. The embodiments disclosed herein further provide, inter alia, related systems and related methods comprising the compositions disclosed herein.

[0015] Figure 1 is a schematic diagram of a system 100 for polishing a hard mask according to some embodiments.

[0016] like Figure 1 As shown in FIG, a system 100 for polishing a hard mask includes a chemical mechanical planarization apparatus (CMP apparatus 200). The CMP apparatus 200 includes a polishing head 205 mounted on a carrier 210, a platen 215, and a polishing pad 220 on the platen 215. The polishing head 205 is configured to hold a substrate 300 and bring the substrate 300 into contact with the polishing pad 220. The polishing pad 220 is configured to rotate to polish the surface of the substrate 300 using a composition 400. The composition 400 is supplied to the substrate 300 from an inlet 225. The inlet 225 is fluidically coupled to a valve 230 for delivering the composition 400 from a source (not shown). In some embodiments, a composition 500 is supplied to the substrate 300 from an inlet 235. The inlet 235 is fluidically coupled to a valve 240 for delivering the composition 500 from a source (not shown). In some embodiments, a process controller 245 (eg, a microprocessor, microcontroller, etc.) is communicatively coupled to valves 230 and 240 for supplying composition 400 and / or composition 500 to substrate 300. In some embodiments, CMP apparatus 200 includes a water supply 250.

[0017] The substrate 300 includes a hard material on the surface of the substrate.

[0018] In some embodiments, the hard material is provided on the surface of a silicon wafer. In some embodiments, the hard material is present in the form of a film on the surface of the substrate. In some embodiments, the hard material on the surface of the substrate is referred to herein as a hard mask. In some embodiments, the hard mask does not contain carbon. In some embodiments, the term "non-carbon" when used as a modifier refers to a material that does not contain carbon. In some embodiments, the hard mask comprises at least one of a non-carbon boron component, a non-carbon silicon component, a non-carbon chromium component, a non-carbon zirconium component, or any combination thereof. In some embodiments, the hard mask comprises boron and amorphous silicon. In some embodiments, the hard mask comprises chromium and chromium oxide. In some embodiments, the hard mask comprises polysilicon and doped polysilicon. In some embodiments, the hard mask comprises silicon dioxide. In some embodiments, the hard mask comprises zirconium oxide.

[0019] In some embodiments, the hard mask comprises or consists of a boron-carbon composition. In some embodiments, the hard mask comprises or consists of boron and carbon. In some embodiments, the hard mask comprises or consists of a boron component and a carbon component.

[0020] In some embodiments, the hardmask comprises a boron component of 1 wt % to 99 wt %, or any range or sub-range therebetween, based on the total weight of the hardmask. In some embodiments, the hard mask includes 10 wt% to 99 wt%, 20 wt% to 99 wt%, 30 wt% to 99 wt%, 40 wt% to 99 wt%, 50 wt% to 99 wt%, 60 wt% to 99 wt%, 65 wt% to 99 wt%, 70 wt% to 99 wt%, 75 wt% to 99 wt%, 80 wt% to 99 wt%, 85 wt% to 99 wt%, 90 wt% to 99 wt%, 95 wt% to 99 wt%, 1 wt% to 90 wt%, 1 wt% to 80 wt%, 1 wt% to 70 wt%, 1 wt% to 60 wt%, 1 wt% to 50 wt%, 1 wt% to 40 wt%, 1 wt% to 30 wt%, 1 wt% to 20 wt%, or 1 wt% or 10 wt% of a boron component, based on the total weight of the hard mask.

[0021] In some embodiments, the hardmask comprises 1 wt % to 99 wt % carbon component, based on the total weight of the hardmask, or any range or sub-range therebetween. In some embodiments, the hard mask includes 10 wt% to 99 wt%, 20 wt% to 99 wt%, 30 wt% to 99 wt%, 40 wt% to 99 wt%, 50 wt% to 99 wt%, 60 wt% to 99 wt%, 65 wt% to 99 wt%, 70 wt% to 99 wt%, 75 wt% to 99 wt%, 80 wt% to 99 wt%, 85 wt% to 99 wt%, 90 wt% to 99 wt%, 95 wt% to 99 wt%, 1 wt% to 90 wt%, 1 wt% to 80 wt%, 1 wt% to 70 wt%, 1 wt% to 60 wt%, 1 wt% to 50 wt%, 1 wt% to 40 wt%, 1 wt% to 30 wt%, 1 wt% to 20 wt%, or 1 wt% to 10 wt% carbon component, based on the total weight of the hard mask.

[0022] The composition 400 includes one or more components for polishing a hard mask on a surface of the substrate 300 .

[0023] In some embodiments, the composition 400 comprises permanganate ions of a permanganate oxidant. In some embodiments, the permanganate oxidant comprises at least one of sodium permanganate, potassium permanganate, lithium permanganate, barium permanganate, hydrogen permanganate, or any combination thereof. In some embodiments, the permanganate ions comprise MnO -4 .

[0024] In some embodiments, the composition 400 includes at least one of ions of a metal-oxygen catalyst, ions of an acid catalyst, or any combination thereof.

[0025] In some embodiments, the metal oxygen catalyst comprises oxygen-nitrate, oxygen-chloride, oxygen-sulfate, oxygen-carbonate, C2-C 10 In some embodiments, the metal-oxygen catalyst comprises at least one of zirconium oxynitrate, zirconium oxychloride, nickel oxynitrate, nickel oxychloride, hafnium oxynitrate, hafnium oxychloride, zirconium oxyalkanoate, or any combination thereof. In some embodiments, the ion of the metal-oxygen catalyst comprises ZrO + 、ZrO ++ 、NiO + 、ZrOH + , HfO + 、HfOH + 、TiO + 、TiO ++or at least one of any combination thereof. In some embodiments, the acid catalyst comprises at least one of aluminum nitrate, aluminum chloride, ferric nitrate, ferric chloride, copper nitrate, potassium chloride, magnesium chloride, or any combination thereof. In some embodiments, the ion of the acid catalyst comprises Al 3+ 、Fe + 、Fe 2+ 、Fe 3+ or at least one of any combination thereof.

[0026] In some embodiments, the composition comprises 0.2 wt % to 6 wt % of a permanganate oxidizing agent, based on the total weight of the composition, or any range or sub-range therebetween. In some embodiments, the composition comprises 0.2% to 5.5%, 0.2% to 5%, 0.2% to 4.5%, 0.2% to 4%, 0.2% to 3.5%, 0.2% to 3%, 0.2% to 2.5%, 0.2% to 2%, 0.2% to 1.5%, 0.2% to 1%, 0.2% to 0.5%, 0.5% to 6%, 1% to 6%, 1.5% to 6%, 2% to 6%, 2.5% to 6%, 3% to 6%, 3.5% to 6%, 4% to 6%, 4.5% to 6%, 5% to 6%, 5.5% to 6% permanganate oxidant based on the total weight of the composition.

[0027] In some embodiments, the composition comprises from 0.01% to 2% by weight of the catalyst, based on the total weight of the composition, or any range or sub-range therebetween. In some embodiments, the composition comprises from 0.1% to 2% by weight, from 0.2% to 2% by weight, from 0.3% to 2% by weight, from 0.4% to 2% by weight, from 0.5% to 2% by weight, from 0.6% to 2% by weight, from 0.7% to 2% by weight, from 0.8% to 2% by weight, from 0.9% to 2% by weight, from 1.1% to 2% by weight, from 1.2% to 2% by weight, from 1.3% to 2% by weight, from 1.4% to 2% by weight, from 1.5% to 2% by weight, from 1.6% to 2% by weight, from 1.7% to 2% by weight, from 1.8% to 2% by weight, from 1.9% to 2% by weight, from 0.01% to 1.9 ... % to 1.8 wt%, 0.01 wt% to 1.7 wt%, 0.01 wt% to 1.6 wt%, 0.01 wt% to 1.5 wt%, 0.01 wt% to 1.4 wt%, 0.01 wt% to 1.3 wt%, 0.01 wt% to 1.2 wt%, 0.01 wt% to 1.1 wt%, 0.01 wt% to 1 wt%, 0.01 wt% to 0.9 wt%, 0.01 wt% to 0.8 wt%, 0.01 wt% to 0.7 wt%, 0.01 wt% to 0.6 wt%, 0.01 wt% to 0.5 wt%, 0.01 wt% to 0.4 wt%, 0.01 wt% to 0.3 wt%, 0.01 wt% to 0.2 wt%, or 0.01 wt% to 0.1 wt% of the catalyst.

[0028] In some embodiments, the composition 400 comprises abrasive particles. In some embodiments, the abrasive particles comprise oxides, hydrated metal oxides, or any combination thereof. In some embodiments, the abrasive particles comprise at least one of manganese oxide, zirconium oxide, silicon dioxide, aluminum oxide, alpha alumina, aluminum oxide-ceria, ceria, or any combination thereof. In some embodiments, the abrasive particles comprise a coating comprising at least one of manganese oxide, zirconium oxide, silicon dioxide, aluminum oxide, alpha alumina, aluminum oxide-ceria, ceria, or any combination thereof. In some embodiments, the abrasive particles have a Mohs hardness of 2 to 9, 2 to 8, 2 to 7, 2 to 6, 2 to 5, 2 to 4, 2 to 3, 3 to 9, 4 to 9, 5 to 9, 6 to 9, 7 to 9, or 8 to 9.

[0029] In some embodiments, the composition 400 comprises a pH adjuster. In some embodiments, the pH adjuster comprises at least one of an inorganic acid, a metal salt, an organic acid, an organic hydroxide, or any combination thereof. In some embodiments, the metal salt comprises at least one of a metal nitrate, a metal hydroxide, or any combination thereof. In some embodiments, the pH adjuster comprises at least one of H2SO4, HNO3, HF, H3PO4, HCl, Al(NO3)3, Mn(NO3)2, Zr(NO3)2, Fe(NO3)3, KOH, NaOH, Al(OH)3, CH3SO3H, polystyrenesulfonic acid (PSSA), toluenesulfonic acid, salicylic acid, oxalic acid, succinic acid, citric acid, malic acid, lactic acid, fumaric acid, NH4OH, choline hydroxide, or any combination thereof.

[0030] In some embodiments, the composition 400 has a pH of 2 to 5. In some embodiments, the composition 400 has a pH of 2 to 4. In some embodiments, the composition 400 has a pH of 2 to 3. In some embodiments, the composition 400 has a pH of 3 to 5. In some embodiments, the composition 400 has a pH of 4 to 5.

[0031] In some embodiments, the composition 400 does not comprise hydrogen peroxide.

[0032] The composition 500 is optional and may include one or more components of the composition 400 .

[0033] In some embodiments, the composition 500 is the same as or similar to the composition 400. In some embodiments, the composition 500 is different from the composition 400. In some embodiments, the composition 500 comprises any one or more of the components described above with respect to the composition 400.

[0034] With respect to at least the composition 400 and the composition 500, the following U.S. patent applications are incorporated herein by reference in their respective entireties for all purposes: U.S. patent application No. 17 / 232,947, filed on April 16, 2021, and entitled “CMP COMPOSITIONS FOR POLISHING DIELECTRIC MATERIALS” and U.S. patent application No. 17 / 163,372, filed on January 30, 2021, and entitled “CMP COMPOSITIONS FOR POLISHING HARD MATERIALS.”

[0035] Some embodiments relate to compositions for polishing a hardmask. The composition for polishing a hardmask may include any of the compositions disclosed herein. In some embodiments, the composition includes permanganate ions of a permanganate oxidizing agent. In some embodiments, the composition can remove at least a portion of the hardmask when contacted with the hardmask using a chemical mechanical planarization apparatus. In some embodiments, the hardmask includes at least one of a non-carbon boron component, a boron-carbon component, a non-carbon silicon component, a non-carbon chromium component, a non-carbon zirconium component, or any combination thereof.

[0036] Figure 2 is a flow chart of a method 600 for polishing a hard mask according to some embodiments. The method 600 for polishing a hard mask may include the steps presented in Figure 2 In some embodiments, method 600 includes step 602 of obtaining a substrate comprising a hard mask. In some embodiments, the hard mask comprises at least one of a boron component, a silicon component, a chromium component, a zirconium component, or any combination thereof. In some embodiments, method 600 includes step 604 of obtaining a composition for polishing the hard mask. In some embodiments, the composition comprises permanganate ions of a permanganate oxidizing agent. In some embodiments, method 600 includes step 606 of bringing the composition and the hard mask into sufficient contact using a chemical mechanical planarization apparatus to remove at least a portion of the hard mask. It should be understood that any of the compositions, substrates, and CMP apparatus disclosed herein may be employed without departing from the scope of the present disclosure.

[0037] Example 1

[0038] Compositions without abrasive particles

[0039] Compositions were prepared using different catalysts and used to polish hardmasks. For comparison purposes, a control composition containing no catalyst was also prepared. None of the compositions contained any abrasive particles. The material removal rates of the various compositions on non-carbon wafers containing approximately 99% boron were measured using a CMP apparatus equipped with a CMP pad available from DuPont (IC1010 CMP polishing pad) and operated at a pressure of 21 kPa, a platen speed of 120 rpm, and a head speed of 60 rpm. For each composition, the oxidant, catalyst, and material removal rate (MRR) are summarized in Table 1 below.

[0040] Table 1

[0041]

[0042] Example 2

[0043] Compositions with abrasive particles

[0044] Compositions were prepared using different catalysts and different abrasive particles. The resulting compositions were used to polish hardmasks. Material removal rates for the various compositions were measured on non-carbon wafers containing approximately 97% boron using a CMP apparatus equipped with a CMP pad available from DuPont (IC1010 CMP polishing pad) and operated at a pressure of 21 kPa, a platen speed of 120 rpm, and a head speed of 60 rpm. For each composition, the oxidant, oxidant concentration (weight percent), abrasive type, abrasive concentration (weight percent), catalyst, and material removal rate (MRR) are summarized in Table 2 below. All weight percents are based on the total weight of each composition.

[0045] Table 2

[0046]

[0047] Example 3

[0048] Compositions with different oxidants

[0049] Compositions were prepared using different oxidizing agents and used to polish hardmask. Material removal rates for various compositions were measured on non-carbon wafers containing approximately 97% boron using a CMP apparatus equipped with CMP pads available from DuPont (IC1010 CMP polishing pad and IK4250H CMP polishing pad) and operated at a pressure of 21 kPa, a platen speed of 120 rpm, and a head speed of 60 rpm. For each composition, the oxidizing agent, oxidizing agent concentration (weight percent), abrasive type, abrasive concentration (weight percent), catalyst, various material removal rates (MRRs), and selectivity are summarized in Tables 3 and 4 below. All weight percentages are based on the total weight of each composition.

[0050] Table 3

[0051]

[0052] Table 4

[0053]

[0054] Example 4

[0055] Compositions with different pH

[0056] Compositions with varying pH values ​​were prepared and used to polish a hard mask. Material removal rates for the various compositions were measured on non-carbon wafers containing approximately 97% boron using a CMP apparatus equipped with a CMP pad available from DuPont (IC1010 CMP polishing pad) and operated at a pressure of 21 kPa, a platen speed of 120 rpm, and a head speed of 60 rpm. For each composition, the oxidant, catalyst, operating pH, and material removal rate (MRR) are summarized in Table 5 below.

[0057] Table 5

[0058]

[0059] Example 5

[0060] Polishing at different pressures

[0061] A composition was prepared comprising 0.8 wt% KMnO4, based on the total weight of the composition, 0.1 wt% alpha alumina abrasive particles, based on the total weight of the composition, 0.5 wt% boehmite abrasive particles, based on the total weight of the composition, and 0.2 wt% zirconyl nitrate, based on the total weight of the composition. The composition was used to polish a boron-amorphous silicon hard mask at different pressures. The material removal rate of the composition on the hard mask at different pressures was measured using a CMP apparatus equipped with a CMP pad available from DuPont (IC1010 CMP polishing pad) and operated at a pressure of 21 kPa, a platen speed of 120 rpm, and a head speed of 60 rpm. The material removal rate of the boron-amorphous silicon hard mask having different boron content levels at each pressure is summarized in Table 6 below.

[0062] Table 6

[0063] sample Boron content 1psi 3psi 5psi FF Low 41 127 323 GG high 1004 1610 3198 HH medium 952 1456 2492

[0064] aspect

[0065] Various aspects are described below. It should be understood that any one or more of the features listed in the following aspects may be combined with any one or more other aspects.

[0066] Aspect 1. A system comprising:

[0067] a composition comprising permanganate ions of a permanganate oxidizing agent,

[0068] a substrate comprising a hard mask comprising at least one of a non-carbon boron component, a boron-carbon component, a non-carbon silicon component, a non-carbon chromium component, a non-carbon zirconium component, or any combination thereof; and

[0069] A chemical mechanical planarization (CMP) apparatus is configured to contact the composition with the substrate to remove at least a portion of the hard mask of the substrate.

[0070] Aspect 2. The system according to aspect 1, wherein the permanganate oxidant comprises at least one of sodium permanganate, potassium permanganate, lithium permanganate, barium permanganate, hydrogen permanganate, or any combination thereof.

[0071] Aspect 3. The system according to any one of aspects 1 to 2, wherein the permanganate ions comprise MnO -4 .

[0072] Aspect 4. The system of any one of aspects 1 to 3, wherein the hard mask comprises boron and amorphous silicon.

[0073] Aspect 5. The system of any one of aspects 1 to 4, wherein the hard mask comprises chromium and chromium oxide.

[0074] Aspect 6. The system of any one of aspects 1 to 5, wherein the hard mask comprises polysilicon and doped polysilicon.

[0075] Aspect 7. The system of any one of aspects 1 to 6, wherein the hard mask comprises silicon dioxide.

[0076] Aspect 8. The system of any one of aspects 1 to 7, wherein the hard mask comprises zirconium oxide.

[0077] Aspect 9. The system of any one of aspects 1 to 8, wherein the composition further comprises at least one of ions of a metal-oxygen catalyst, ions of an acid catalyst, or any combination thereof.

[0078] Aspect 10. The system of any one of aspects 1 to 9, wherein the composition further comprises abrasive particles having a Mohs hardness of 2 to 9.

[0079] Aspect 11. The system according to any one of aspects 1 to 10, wherein the composition further comprises a pH adjuster.

[0080] Aspect 12. A method comprising:

[0081] obtaining a substrate comprising a hard mask comprising at least one of a boron component, a silicon component, a chromium component, a zirconium component, or any combination thereof;

[0082] obtaining a composition comprising permanganate ions of a permanganate oxidizing agent; and

[0083] The composition is brought into contact with the hard mask using chemical mechanical planarization equipment to sufficiently remove at least a portion of the hard mask.

[0084] Aspect 13. The method according to aspect 12, wherein the permanganate oxidizing agent comprises at least one of sodium permanganate, potassium permanganate, lithium permanganate, barium permanganate, hydrogen permanganate, or any combination thereof.

[0085] Aspect 14. The method according to any one of aspects 12 to 13, wherein the permanganate ions comprise MnO -4 .

[0086] Aspect 15. The method of any one of aspects 12 to 14, wherein the hard mask comprises boron and amorphous silicon.

[0087] Aspect 16. The method of any one of aspects 12 to 15, wherein the hard mask comprises chromium and chromium oxide.

[0088] Aspect 17. The method of any one of aspects 12 to 16, wherein the hard mask comprises polysilicon and doped polysilicon.

[0089] Aspect 18. The method of any one of aspects 12 to 17, wherein the hard mask comprises silicon dioxide.

[0090] Aspect 19. The method of any one of aspects 12 to 18, wherein the hard mask comprises zirconium oxide.

[0091] Aspect 20. A composition comprising:

[0092] permanganate ion of the permanganate oxidant,

[0093] wherein the composition removes at least a portion of the hard mask when in contact with the hard mask using a chemical mechanical planarization apparatus,

[0094] The hard mask comprises at least one of a non-carbon boron component, a boron-carbon component, a non-carbon silicon component, a non-carbon chromium component, a non-carbon zirconium component, or any combination thereof.

[0095] It should be understood that changes may be made in details, especially in matters of construction materials employed and the shape, size and arrangement of parts without departing from the scope of the invention. This specification and described embodiments are examples, with the true scope and spirit of the disclosure being indicated by the following claims.

Claims

1. A system comprising: a composition comprising permanganate ions of a permanganate oxidizing agent; a substrate comprising a hard mask formed of a non-carbon material or a boron-carbon material; and Chemical Mechanical Planarization (CMP) Equipment, The CMP apparatus is configured to contact the composition with the hard mask to remove at least a portion of the hard mask.

2. The system of claim 1, wherein the permanganate oxidant comprises at least one of sodium permanganate, potassium permanganate, lithium permanganate, barium permanganate, hydrogen permanganate, or any combination thereof.

3. The system of claim 1 , wherein the permanganate ions comprise MnO -4 .

4. The system of claim 1, wherein the hard mask comprises boron and amorphous silicon.

5. The system of claim 1, wherein the hard mask comprises chromium and chromium oxide.

6. The system of claim 1, wherein the hard mask comprises polysilicon and doped polysilicon. The system of claim 1 , wherein the hard mask comprises silicon dioxide.

8. The system of claim 1, wherein the hard mask comprises zirconium oxide.

9. The system of claim 1, wherein the composition further comprises at least one of ions of a metal-oxygen catalyst, ions of an acid catalyst, or any combination thereof.

10. The system of claim 1, wherein the composition further comprises abrasive particles having a Mohshardness of 2 to 9.

11. The system of claim 1 , wherein the composition further comprises a pH adjuster.

12. A method comprising: obtaining a substrate comprising a hard mask formed of a non-carbon material or a boron-carbon material; obtaining a composition comprising permanganate ions of a permanganate oxidizing agent; and The composition is contacted with the hard mask using chemical mechanical planarization equipment to remove at least a portion of the hard mask.

13. The method of claim 12, wherein the permanganate oxidizing agent comprises at least one of sodium permanganate, potassium permanganate, lithium permanganate, barium permanganate, hydrogen permanganate, or any combination thereof.

14. The method of claim 12, wherein the permanganate ions comprise MnO -4 .

15. The method of claim 12, wherein the hard mask comprises boron and amorphous silicon.

16. The method of claim 12, wherein the hard mask comprises chromium and chromium oxide.

17. The method of claim 12, wherein the hard mask comprises polysilicon and doped polysilicon. The method of claim 12 , wherein the hard mask comprises silicon dioxide. The method of claim 12 , wherein the hard mask comprises zirconium oxide.

20. A composition comprising: permanganate ion of the permanganate oxidant, The composition can remove at least a portion of a non-carbon hard mask or a boron-carbon hard mask when contacted with the non-carbon hard mask or the boron-carbon hard mask using a chemical mechanical planarization device.

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