Substrate employing vertical conductor loop for coupling noise reduction in radio frequency (RF) transmit line, and related antenna module and method of manufacture

Abstract

Antenna module substrates employing vertical conductor loops for coupling noise reduction in radio frequency (RF) transmit lines, and related antenna modules and methods of manufacture. To provide effective electrical isolation between closely wired RF transmit lines in a metallization layer of a substrate, a vertical conductor loop is formed in the metallization layer adjacent to the RF transmit lines. A magnetic flux loop generated by the RF transmission line as a result of carrying an RF signal penetrates through the opening of the adjacent vertical loop structure, thereby inducing a magnetic field in the vertical conductor loop in the opposite direction of the magnetic flux. The induced magnetic field in the vertical conductor loop induces an eddy current in the vertical conductor loop, which in turn interferes with the magnetic flux, thereby inducing a magnetic damping force in the magnetic flux, thereby reducing or eliminating RF transmit line coupling noise.

Description

[0001] Priority application

[0002] This application claims priority to U.S. patent application serial number 18 / 170,612, filed on February 17, 2023, and entitled “SUBSTRATE EMPLOYING VERTICAL CONDUCTOR LOOPS FOR COUPLING NOISE REDUCTION IN RADIO-FREQUENCY (RF) TRANSMISSION LINES, AND RELATED ANTENNA MODULES AND FABRICATION METHODS,” which is incorporated herein by reference in its entirety. background I. Technical Field

[0003] The field of the present disclosure relates to antenna modules (also referred to as "antenna in package" (AiP)) that include a radio frequency (RF) integrated circuit (IC) (RFIC) coupled to an antenna through an antenna module substrate. II. Background Technology

[0004] Modern smartphones and other portable devices have expanded their use of different wireless links using various technologies in different radio frequency bands. For example, 5G cellular networks, often referred to as fifth-generation (5G) New Radio (NR), include frequencies in the range of 24.25 GHz to 86 GHz, with the lower 19.25 GHz (24.25 GHz to 43.5 GHz) being more likely to be used for mobile devices. This spectrum range for 5G communications falls within the millimeter wave (mmWave) or millimeter frequency band. mmWave is capable of achieving higher data rates than at lower frequencies, such as those used for Wi-Fi networks and current cellular networks.

[0005] Radio frequency (RF) transceivers supporting mmWave spectrum are incorporated into mobile devices and other portable devices designed to support mmWave communication signals. To support the integration of the RF transceiver in the device, the RF transceiver can be integrated into an RFIC in an RF integrated circuit (IC) (RFIC) chip provided as part of an antenna module. The RFIC chip is implemented in an RFIC semiconductor die ("die"). The antenna module is also referred to as an "antenna in package" (AiP). A conventional antenna module includes an RFIC package that includes one or more RFICs, a power management IC (PMIC), and passive electrical components (e.g., inductors, capacitors, etc.) mounted to an antenna module substrate (e.g., a package substrate) as a support and signal routing structure. The RFIC includes an RF signal transmitter and a receiver that are capable of modulating RF signals to be transmitted in the supported frequency band and demodulating RF signals received in the supported frequency band. The antenna module substrate supports a metallization structure to provide a chip-to-chip interface and an external signal interface to the RFIC package. The antenna module substrate also includes a metallization layer (which may be included in the package substrate or included in a substrate separate from the package substrate) that includes one or more antennas electrically coupled to the RFIC package through the metallization structure of the package substrate. The antennas are capable of receiving and radiating electrical RF signals as electromagnetic (EM) signals. The antenna module substrate may include multiple antennas (also known as an antenna array) to provide signal coverage over a desired larger area around the antenna module.

[0006] In order to provide an RF signal feed line between the RFIC and the antenna in the antenna module, the antenna module substrate of the antenna module includes an RF signal transmission line ("RF transmission line"). The RF transmission line is formed in the antenna module substrate to provide an RF signal routing path between the RFIC and the antenna. If the RF transmission lines are positioned close enough to each other in the antenna module substrate for efficient routing, the conduction of the RF signal in the RF transmission line can generate electromagnetic waves, which can induce current in adjacent RF transmission lines as "noise". Therefore, in the antenna module, it is conventional to provide some type of isolation feature between the RF transmission lines to prevent or reduce noise. For example, a ground plane may be formed in the antenna module substrate around the RF transmission line. The ground plane may be formed in adjacent metallization layers above and below the metallization layer of the RF transmission line, wherein vertical via connectors are provided between the RF transmission lines connected to the top and bottom adjacent ground planes to effectively surround the RF transmission line with the ground plane for isolation. Summary of the Invention

[0007] Various aspects disclosed in the specific embodiments include a substrate that uses vertical conductor loops to reduce coupling noise in radio frequency (RF) transmission lines. Related antenna modules and manufacturing methods are also disclosed. The substrate can be an antenna module substrate included in the antenna module as a packaging substrate or a separate antenna substrate. The substrate includes one or more metallization layers for providing signal routing between RF integrated circuits (RFICs) in the antenna module. The substrate may also include antenna elements in one or more metallization layers that serve as antennas for the antenna module. RF transmission lines are formed in the packaging substrate to route RF signals from the RFIC to the antenna. As the size of antenna module packages decreases, it may be necessary or desirable to provide more efficient signal routing in the substrate in which the RF transmission lines are routed and physically positioned closer to each other in a given metallization layer. Such more efficient routing may not provide sufficient lateral spacing between adjacent RF transmission lines to form a ground plane connection between adjacent RF transmission lines to electrically isolate the RF transmission lines to prevent or reduce coupling noise between adjacent RF transmission lines. Therefore, in an exemplary aspect, in order to provide effective electrical isolation between adjacent and more closely routed RF transmission lines in the metallization layers of a substrate, a vertical conductor loop is formed in one or more adjacent metallization layers adjacent to the RF transmission line. The vertical conductor loop is formed in a metallization layer adjacent to (e.g., vertically above and / or below) the metallization layer of the RF transmission line. The vertical conductor loop can be coupled to a ground plane in its corresponding metallization layer. In this manner, the magnetic flux loop generated by the RF transmission line due to the RF signal it carries penetrates the opening of the adjacent vertical loop structure, thereby inducing a magnetic field in the vertical conductor loop that is opposite in direction to the magnetic field. The induced magnetic field in the vertical conductor loop induces eddy currents in the vertical conductor loop, which in turn interfere with the magnetic field, thereby causing a magnetic damping force in the magnetic field. This reduces or eliminates the magnetic flux of the magnetic field generated by the RF transmission line, thereby reducing or eliminating the coupling noise induced by one RF transmission line to the adjacent RF transmission line.

[0008] In this manner, as an example, a magnetic field from one RF transmit line that is induced in an adjacent RF transmit line and that generates coupled noise in the adjacent RF transmit line is reduced or eliminated. This reduction or elimination of coupled noise does not require providing a ground plane connection laterally between adjacent transmit lines in their metallization layers, which would otherwise require lateral space between adjacent transmit lines sufficient to provide such a ground plane connection. Providing such a ground plane connection may not allow the RF transmit lines to be spaced closer together, nor may it reduce the spacing as desired. However, where the vertical conductor loops are vertically displaced relative to the RF transmit lines in adjacent metallization layers, sufficient coupled noise reduction and / or elimination may still be achieved, but with the ability to provide reduced spacing and spacing between adjacent RF transmit lines in the substrate.

[0009] In this regard, in one exemplary aspect, a substrate is provided. The substrate includes a first metallization layer located in a first plane, the first metallization layer including a first RF transmission line extending in a first direction in the first plane and a second RF transmission line adjacent to the first RF transmission line. The substrate also includes a plurality of second metallization layers parallel to the first metallization layer. The plurality of second metallization layers include a first conductor loop structure adjacent to the first RF transmission line and the second RF transmission line. The first conductor loop structure includes one or more first conductor loops, each of which is located in a second plane orthogonal to the first plane. The substrate also includes a plurality of third metallization layers parallel to the first metallization layer, wherein the first metallization layer is located between the plurality of second metallization layers and the plurality of third metallization layers in a second direction orthogonal to the first plane. The plurality of third metallization layers include a second conductor loop structure adjacent to the first RF transmission line and the second RF transmission line, the second conductor loop structure including one or more second conductor loops, each of which is located in a third plane orthogonal to the first plane.

[0010] In another exemplary aspect, a method for manufacturing a substrate is provided. The method includes forming a first metallization layer in a first plane. The method also includes forming a first RF transmission line extending in a first direction in the first plane in the first metallization layer. The method also includes forming a second RF transmission line adjacent to the first RF transmission line in the first metallization layer. The method also includes forming a plurality of second metallization layers parallel to the first metallization layer. The method also includes forming a first conductor loop structure adjacent to the first and second RF transmission lines in the plurality of second metallization layers, the first conductor loop structure including one or more first conductor loops, each first conductor loop located in a second plane orthogonal to the first plane. The method also includes forming a plurality of third metallization layers parallel to the first metallization layer, wherein the first metallization layer is located between the plurality of second metallization layers and the plurality of third metallization layers in a second direction orthogonal to the first plane. The method also includes forming a second conductor loop structure adjacent to the first and second RF transmission lines in the plurality of third metallization layers, the second conductor loop structure including one or more second conductor loops, each second conductor loop located in a third plane orthogonal to the first plane.

[0011] In another exemplary aspect, an antenna module is provided. The antenna module includes a substrate including an antenna substrate and a package substrate coupled to the antenna substrate, the antenna substrate including one or more antennas. The antenna module also includes an integrated circuit (IC) die layer, the integrated circuit (IC) die layer including a first die, the first die including a plurality of first die interconnects coupled to the package substrate. The substrate includes a first metallization layer located in a first plane and including a first RF transmit line and a second RF transmit line, the first RF transmit line coupled to a first antenna of the one or more antennas, and the second RF transmit line adjacent to the first RF transmit line, the second RF transmit line coupled to a second antenna of the one or more antennas. The substrate also includes a plurality of second metallization layers parallel to the first metallization layer and including a first conductor loop structure adjacent to the first RF transmit line and the second RF transmit line, the first conductor loop structure including one or more first conductor loops, each first conductor loop located in a second plane orthogonal to the first plane. The substrate also includes a plurality of third metallization layers parallel to the first metallization layer, wherein the first metallization layer is located between the plurality of second metallization layers and the plurality of third metallization layers in a second direction orthogonal to the first plane. The plurality of third metallization layers include a second conductor loop structure adjacent to the first RF transmit line and the second RF transmit line, the second conductor loop structure including one or more second conductors. The plurality of first die interconnects are coupled to the first RF transmit line and the second RF transmit line. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 is a side view of an exemplary antenna module including a substrate supporting an antenna formed in a metallization layer of the substrate;

[0013] Figure 2A and Figure 2B They can be Figure 1 A top view and a cross-sectional side view of an exemplary metallization layer with exemplary routing of RF transmission lines provided in a substrate in an antenna module;

[0014] Figure 3 can be included in the antenna module (including Figure 1 a top view of an exemplary portion of a substrate in an antenna module in which RF transmit lines are routed in a metallization layer with reduced spacing between the RF transmit lines;

[0015] Figure 4A and Figure 4Ba perspective view and a cross-sectional side view, respectively, of an RF transmission line routed through metallization layers in a substrate, wherein vertical conductor loops are formed vertically above and below the RF transmission line in respective upper and lower metallization layers, wherein the vertical conductor loops are configured to be penetrated by a magnetic flux loop generated by the RF transmission line, thereby inducing a magnetic field and eddy currents in the vertical conductor loops, interfering with the magnetic field, thereby inducing a magnetic damping force in the magnetic field to attenuate or cancel the magnetic field generated by the RF transmission line;

[0016] Figures 5A to 5C They may be included in the antenna module (including Figure 1 a perspective view, a cross-sectional side view, and a cross-sectional front view of another substrate in an antenna module in a device (e.g., an antenna module in a device), the substrate including an RF transmit line routed in a first metallization layer and upper and lower metallization layers having vertical conductor loops formed therein and connected to the RF transmit line to attenuate or cancel a magnetic field generated by the RF transmit line;

[0017] Figure 6A and Figure 6B They are Figure 5B and Figure 5C Close-up views of the side and front views of the substrate in FIG;

[0018] Figure 7 yes Figure 5C ;

[0019] Figure 8A and Figure 8B They are Figures 5A to 5C an exemplary graph of noise coupling between adjacent RF transmit lines and non-directly adjacent RF transmit lines in a substrate as a function of frequency of RF signals carried in the RF transmit lines;

[0020] Figure 9 is an example of a method for manufacturing an antenna module (including Figure 1 A flow chart of an exemplary manufacturing process for a substrate in an antenna module in a device, the substrate including an RF transmission line routed in a first metallization layer and upper and lower metallization layers having vertical conductor loops formed therein and connected to the RF transmission line to attenuate or eliminate a magnetic field generated by the RF transmission line, the substrate including but not limited to Figures 5A to 5C 、 Figures 6A to 6B and Figure 7 The substrate may include Figure 1 In the antenna module;

[0021] FIG. 10A to FIG. 10B is an example of a method for manufacturing an antenna module (including Figure 1A flow chart of another exemplary manufacturing process for a substrate in an antenna module in a device (e.g., an antenna module in a device) including an RF transmission line routed in a first metallization layer and upper and lower metallization layers having vertical conductor loops formed therein and connected to the RF transmission line to attenuate or eliminate a magnetic field generated by the RF transmission line, the substrate including but not limited to Figure 1 、 Figures 5A to 5C 、 Figures 6A to 6B and Figure 7 The substrate may include Figure 1 In the antenna module;

[0022] Figures 11A to 11C Illustrated based on FIG. 10A to FIG. 10B exemplary manufacturing stages during the manufacture of a substrate manufactured in a manufacturing process;

[0023] Figure 12 is a block diagram of an exemplary wireless communication device including an antenna module, the antenna module including a substrate including an RF transmit line routed in a first metallization layer and upper and lower metallization layers having vertical conductor loops formed therein and connected to the RF transmit line to attenuate or cancel a magnetic field generated by the RF transmit line, the substrate including but not limited to Figure 1 、 5A to Figure 5C 、 Figures 6A to 6B 、 Figure 7 and Figures 11A to 11C The substrate may include Figure 1 In the antenna module, and according to Figure 9 and FIG. 10A to FIG. 10B any manufacturing process in the manufacturing process; and

[0024] Figure 13 is a block diagram of an exemplary processor-based system including an antenna module comprising a substrate including an RF transmit line routed in a first metallization layer and upper and lower metallization layers having vertical conductor loops formed therein and connected to the RF transmit line to attenuate or cancel a magnetic field generated by the RF transmit line, the substrate including but not limited to Figure 1 、 5A to Figure 5C 、 Figures 6A to 6B 、 Figure 7 and Figures 11A to 11C The substrate may include Figure 1 In the antenna module, and according to Figure 9 and FIG. 10A to FIG. 10B Any manufacturing process in the manufacturing process. DETAILED DESCRIPTION

[0025] With reference now to the accompanying drawings, several exemplary aspects of the present disclosure are described. The word "exemplary" is used herein to mean "serving as an example, instance, or illustration." Any aspect described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other aspects.

[0026] Various aspects disclosed in the specific embodiments include a substrate that uses vertical conductor loops to reduce coupling noise in radio frequency (RF) transmission lines. Related antenna modules and manufacturing methods are also disclosed. The substrate can be an antenna module substrate included in the antenna module as a packaging substrate or a separate antenna substrate. The substrate includes one or more metallization layers for providing signal routing between RF integrated circuits (RFICs) in the antenna module. The substrate may also include antenna elements in one or more metallization layers that serve as antennas for the antenna module. RF transmission lines are formed in the packaging substrate to route RF signals from the RFIC to the antenna. As the size of antenna module packages decreases, it may be necessary or desirable to provide more efficient signal routing in the substrate in which the RF transmission lines are routed and physically positioned closer to each other in a given metallization layer. This more efficient routing may not provide sufficient lateral spacing between adjacent RF transmission lines to form a ground plane connection between adjacent RF transmission lines to electrically isolate the RF transmission lines to prevent or reduce coupling noise between the RF transmission lines. Therefore, in an exemplary aspect, in order to provide effective electrical isolation between adjacent and more closely routed RF transmission lines in the metallization layers of a substrate, vertical conductor loops are formed in one or more metallization layers adjacent to the RF transmission lines. The vertical conductor loops are formed in a metallization layer adjacent to (e.g., vertically above and / or below) the metallization layer of the RF transmission line. The vertical conductor loops can be coupled to a ground plane in their respective metallization layers. In this manner, the magnetic flux loops generated by the RF transmission line due to the RF signal it carries penetrate the openings of the vertical loop structure, thereby inducing a magnetic field in the vertical conductor loop that is opposite in direction to the magnetic field. The induced magnetic field in the vertical conductor loops induces eddy currents in the vertical conductor loops, which in turn interfere with the magnetic field, thereby causing a magnetic damping force in the magnetic field. This weakens or cancels the magnetic field generated by the RF transmission line, thereby reducing or eliminating the coupling noise induced by one RF transmission line to an adjacent RF transmission line.

[0027] In this manner, as an example, a magnetic field from one RF transmit line that is induced in an adjacent RF transmit line and that generates coupled noise in the adjacent RF transmit line is reduced or eliminated. This reduction or elimination of coupled noise does not require providing a ground plane connection laterally between adjacent transmit lines in their metallization layers, which would otherwise require lateral space between adjacent transmit lines sufficient to provide such a ground plane connection. Providing such a ground plane connection may not allow the RF transmit lines to be spaced closer together, nor may it reduce the spacing as desired. However, where the vertical conductor loops are vertically displaced relative to the RF transmit lines in adjacent metallization layers, sufficient coupled noise reduction and / or elimination may still be achieved, but with the ability to provide reduced spacing and spacing between adjacent RF transmit lines in the substrate.

[0028] Before discussing the example of a substrate using a vertical conductor loop for coupling noise reduction in an RF transmission line starting from FIG. 4 , first refer to the following Figures 1 to 3 An exemplary antenna module and exemplary RF transmit lines routed in a metallization layer that may be provided in a substrate of the antenna module are discussed.

[0029] In this regard, Figure 1 1 is a view of an exemplary antenna module 100 that is an RFIC package configured in a side-by-side arrangement. The antenna module 100 includes a substrate 102 that supports signal routing between an RFIC die 104 mounted to the substrate 102. The substrate 102 can be a package substrate. The substrate 102 includes an antenna substrate 106 that includes four (4) antennas 108(1)-108(4), each antenna including a respective first antenna element 110(1)-110(4) and a second antenna element 112(1)-112(4). The substrate 102 also includes a package substrate 114 that includes a plurality of metallization layers 116, each metallization layer including metal interconnects 118 for routing signals between the RFIC die 104 and the antennas 108(1)-108(4). The substrate 102 also includes a core substrate 120 disposed between the package substrate 114 and the antenna substrate 106 to increase the robustness and stability of the antenna module 100. The core substrate 120 also includes a metal interconnect 122 that is coupled to the metal interconnect 118 in the packaging substrate 114 and the first antenna elements 110 ( 1 )- 110 ( 4 ) in the antenna substrate 106 through a via 124 to provide a signal routing path between the packaging substrate 114 and the antenna substrate 106 .

[0030] The antenna module 100 also includes an IC die layer 126, which is arranged in a horizontal plane (the plane of the X-axis and Y-axis directions) and includes an RFIC die 104, which includes a semiconductor die that includes an encapsulated RF transceiver. The RFIC die 104 is coupled to the substrate 102 via its die interconnect 128, which is coupled to the metal interconnect 118 in the package substrate 114. The antenna module 100 may also include a separate adjacent power management IC (PMIC) die 130 that provides power to the RFIC die 104. The RFIC die 104 and the PMIC die 130 are arranged side by side in the horizontal direction (the X-axis direction). The IC die layer 126 also includes other passive components 132 (e.g., capacitors, inductors) that are electrically coupled to the RFIC die 104 and / or the PMIC die 130 through the substrate 102 as part of the circuit formed therein. An electromagnetic interference (EMI) shield 134 is disposed around the RFIC die 104 and other components in the IC die layer 126 to provide RF shielding for these components.

[0031] Continue to refer Figure 1 Each antenna 108(1)-108(4) is a patch antenna that includes an antenna element 110(1)-110(4) adjacent to the core substrate 120 and a second antenna element 112(1)-112(4) (in the form of a metal patch) disposed vertically (in the Z-axis direction) below the corresponding first antenna element 110(1)-110(4). The antenna elements 110(1)-110(4) are coupled to the RFIC die 104 through vias 136 and metal interconnects 122, 118, acting as RF transmission lines to feed RF signals to and from the antennas 108(1)-108(4). The second antenna elements 112(1)-112(4) are not in contact with the first antenna elements 110(1)-110(4), but are configured to be electromagnetically (EM) coupled to the first antenna elements 110(1)-110(4) when the first antenna elements 110(1)-110(4) receive an RF signal to be radiated. Similarly, when the second antenna elements 112(1)-112(4) are excited by the received RF signal, the second antenna elements 112(1)-112(4) are EM coupled to the first antenna elements 110(1)-110(4) with the received RF signal.

[0032] Figure 2A and Figure 2B They can be used in antenna modules (such as Figure 1FIG2 is a top view and side view of exemplary first, second, and third metallization layers 200(1)-200(3) provided in a substrate of an antenna module 100 in FIG2. In this example, the first metallization layer 200(1) has exemplary four (4) routed RF transmit lines 202(1)-202(4) extending in a first direction (X-axis direction) and parallel to each other. Figure 2A A top view of the first metallization layer 200(1) is illustrated. Figure 2B Illustrate cross Figure 2B A side view of the first metallization layer, the second metallization layer and the third metallization layer 200(1)-200(3) along the A1-A1′ section line shown in FIG, showing the first metallization layer 200(1), wherein the RF transmission lines 202(1)-202(4) are arranged to be adjacent to the second metallization layer 200(2) and the third metallization layer 200(3) in a second vertical direction (Z-axis direction) orthogonal to the first direction (X-axis direction) and to be located between the second metallization layer and the third metallization layer.

[0033] The conduction of RF signals in the RF transmission lines 202(1)-202(4) in the first metallization layer 200(1) generates EM waves that induce currents in adjacent RF transmission lines as "noise", which may not be expected to negatively affect RF performance. Therefore, in this example, the RF transmission lines 202(1)-202(4) are each surrounded by ground planes 204(1), 204(2) formed in the respective second metallization layer 200(2) and third metallization layer 200(3) in the vertical direction (Z-axis direction). However, the ground planes 204(1), 204(2) alone do not isolate the RF transmission lines 202(1)-202(4) from each other in the lateral direction within their first metallization layer 200(1). In order to laterally isolate the RF transmit lines 202(1)-202(4) from each other in the third direction (Y-axis direction), the metal interconnect 206(1) adjacent to each of the RF transmit lines 202(1)-202(4) and between the RF transmit lines is coupled to the ground planes 204(1), 204(2) through the corresponding vias 208(1), 208(2), which effectively places the ground planes 204(1), 204(2) on each side of the RF transmit lines 202(1)-202(4) to isolate them from each other.

[0034] However, it may be desirable to reduce the size of antenna modules such as Figure 1 Reducing the size of the antenna module 100 in the embodiment of the present invention may necessarily mean reducing the size of its substrate. This may require that the RF transmission lines in the reduced-size substrate be routed in a smaller area in the substrate, thereby requiring the RF transmission lines to be positioned closer together with a reduced line / space (L / 3) metal pattern and spacing. This is in Figure 3 This is shown by way of example. Figure 3 can be included in the antenna module (including Figure 1 A top view of an exemplary portion of a substrate 300 in an antenna module 100 in FIG. The substrate 300 includes a first metallization layer 302(1) having four (4) RF transmission lines 304(1)-304(4) routed therein, the RF transmission lines extending parallel to each other in a first direction (the X-axis direction). However, as Figure 3 As shown, the RF transmit lines 304(1)-304(4) are still adjacent to each other, but are closer than Figure 2A and Figure 2B The RF transmit lines 202(1)-202(4) in the embodiment of the present invention are positioned closer to each other. The RF transmit lines 304(1)-304(4) are routed in a routing channel 306 having a width W1 of 310 micrometers (μm). There is insufficient space between adjacent RF transmit lines 304(1)-304(4) in the third lateral direction (Y-axis direction) to form vias that couple to metal interconnects from adjacent metallization layers in the first direction (Z-axis direction) to extend a ground plane shield between the RF transmit lines 304(1)-304(4), thereby isolating them from each other in the third lateral direction (Y-axis direction).

[0035] "Adjacent" RF transmission lines means that such RF transmission lines are spatially adjacent to each other or side by side with some intermediate space between the adjacent RF transmission lines. For example, in this example, RF transmission line 302(1) is adjacent to RF transmission line 302(2) with an intermediate space between them. RF transmission line 302(2) is adjacent to both RF transmission line 302(1) and RF transmission line 302(3), with an intermediate space between the respective RF transmission line 302(2) and RF transmission lines 302(1), 302(3). RF transmission line 302(3) is adjacent to both RF transmission line 302(2) and RF transmission line 302(4), with an intermediate space between the respective RF transmission line 302(3) and RF transmission lines 302(2), 302(4). RF transmission line 302(4) is adjacent to RF transmission line 302(3), with an intermediate space between the respective RF transmission line 302(4) and RF transmission line 302(3). These respective adjacent RF transmit lines can be positioned sufficiently close to one another in space so that the EM waves generated by the conduction of the RF signal in one RF transmit line 302(1)-302(4) generate noise signals in another adjacent RF transmit line 302(1)-302(4). Therefore, in order to still provide effective noise isolation between the more closely routed RF transmit lines in a substrate for an antenna module, the exemplary aspects disclosed below illustrate a substrate including vertical conductor loops formed in one or more metallization layers in the substrate adjacent to the metallization layer containing the RF transmit lines. The vertical conductor loops can be formed in metallization layers vertically above and / or below the metallization layer of the RF transmit lines and can be coupled to ground planes in their respective metallization layers. The magnetic flux loops generated by the RF transmit lines due to the RF signal they carry penetrate the openings of the adjacent vertical loop structures, thereby inducing a magnetic field in the vertical conductor loops that is opposite in direction to the magnetic field. The induced magnetic field in the vertical conductor loops induces eddy currents in the vertical conductor loops, which in turn interfere with the magnetic field, thereby causing magnetic damping forces in the magnetic field. This reduces or eliminates the magnetic field generated by the RF transmit line, thereby reducing or eliminating coupling noise induced by one RF transmit line to an adjacent RF transmit line.

[0036] This is Figure 4A and Figure 4B This is shown by way of example. Figure 4A is a perspective view of adjacent RF transmit lines 400(1), 400(2) routed in a metallization layer (not shown) that will extend in a plane in the substrate in the X-axis and Y-axis directions. Figure 4B yes Figure 4AFIG2 is a side cross-sectional view of adjacent RF transmission lines 400(1), 400(2) on section line A2-A2′ in FIG2. The adjacent RF transmission lines 400(1), 400(2) both extend in a first transverse direction (X-axis direction) and are parallel to each other. In this example, the RF transmission line 400(1) is adjacent to the RF transmission line 400(2), which means that the RF transmission lines 400(1), 400(2) are spatially adjacent to each other or side by side with some intermediate space between them. These respective adjacent RF transmission lines 400(1), 400(2) can be positioned spatially close enough to each other so that the EM waves generated by the conduction of the RF signal in one RF transmission line 400(1), 400(2) generate a noise signal in the other respective adjacent RF transmission line 400(2), 400(1).

[0037] Continue to refer Figure 4A and Figure 4B , the first conductor loop structure 402(1) is arranged in another metallization layer (not shown) adjacent to the RF transmission line 400(1), 400(2) in the vertical direction (Z-axis direction) and above it. By the first conductor loop structure 402(1) and the second conductor loop structure 402(2) being "adjacent" to the RF transmission line 400(1), 400(2), it is meant that the first conductor loop structure 402(1) and the second conductor loop structure 402(2) are spatially adjacent to or next to the RF transmission line 400(1), 400(2), wherein there is some intermediate space between the first conductor loop structure 402(1) and the second conductor loop structure 402(2) and the RF transmission line 400(1), 400(2). The first conductor loop structure 402(1) includes a plurality of first conductor loops 404(1)(1)-404(1)(5) coupled to each other. Each first conductor loop 404(1)(1)-404(1)(5) is arranged in a first plane P1 in the X-axis and Z-axis directions. The second conductor loop structure 402(2) is also arranged in another metallization layer (not shown) adjacent to and below the RF transmission lines 400(1), 400(2) in the vertical direction (Z-axis direction). The second conductor loop structure 402(1) includes a plurality of first conductor loops 404(2)(1)-404(2)(5) coupled to each other. Each second conductor loop 404(2)(1)-404(2)(5) is arranged in a first plane P2 in the X-axis and Z-axis directions. Continue to refer to Figure 4A and Figure 4B , when the RF transmission lines 400(1), 400(2) carry RF signals, a first magnetic field 406 is generated. In this example, the first magnetic field 406 is generated at Figure 4A and Figure 4B400(2) are generated in a clockwise direction around the RF transmit lines 400(1), 400(2), but this is not limiting. The magnetic flux of the first magnetic field 406 passes through the first conductor loops 404(1)(1)-404(1)(5) and the second conductor loops 404(2)(1)-404(2)(5) as they are oriented above and below the RF transmit lines 400(1), 400(2) in the path of the first magnetic field 406. In this example, the first conductor loop structure 402(1) and the second conductor loop structure 402(2) are oriented so that the planes P1, P2 of their respective first conductor loops 404(1)(1)-404(1)(5) and second conductor loops 404(2)(1)-404(2)(5) are perpendicular to the direction of the magnetic flux of the first magnetic field 406 passing through the first conductor loops 404(1)(1)-404(1)(5) and second conductor loops 404(2)(1)-404(2)(5). In this example, the first conductor loop structure 402(1) and the second conductor loop structure 402(2) are sufficiently close to the RF transmission lines 400(1), 400(2) that eddy currents E1, E2 are induced in the first conductor loops 404(1)(1)-404(1)(5) and the second conductor loops 404(2)(1)-404(2)(5). This is because the magnetic flux of the first magnetic field 406 penetrates the first conductor loops 404(1)(1)-404(1)(5) and the second conductor loops 404(2)(1)-404(2)(5). These eddy currents E1, E2 flowing in the first conductor loops 404(1)(1)-404(1)(5) and the second conductor loops 404(2)(1)-404(2)(5) then generate an induced second magnetic field 408 in the opposite direction of the first magnetic field 406, which interferes with the first magnetic field 406, which generates a magnetic damping force in the first magnetic field 406 that significantly weakens or cancels the first magnetic field 406. This has the effect of reducing or canceling noise induced into one RF transmission line 400(1), 400(2) by another RF transmission line 400(2), 400(1) carrying an RF signal.

[0038] Figures 5A to 5C They may be included in the antenna module (including Figure 11 . The substrate 500 includes a first metallization layer 502(1) disposed in a first plane P3, the first metallization layer extending in a first direction and a third direction (X-axis direction and Y-axis direction) in the first plane, the first metallization layer including four (4) RF transmission lines 504(1)-504(4). The first metallization layer 502(1) may be a core substrate layer, such that the substrate 500 is a core substrate. Alternatively, the substrate 500 may be a coreless substrate. In this example, the RF transmission lines 504(1)-504(4) each extend adjacent to each other in the first direction (X-axis direction) in the first plane P3 and are parallel to each other. As a non-limiting example, the RF transmission lines 504(1)-504(4) may be spaced only 40 μm to 60 μm apart and have a pitch of less than 100 μm, such as between 65 μm and 85 μm. In this regard, in this example, the RF transmission line 504(1) is adjacent to the RF transmission line 504(2) with an intermediate space therebetween. The RF transmission line 504(2) is adjacent to both the RF transmission line 504(1) and the RF transmission line 504(3), with an intermediate space therebetween. The RF transmission line 504(3) is adjacent to both the RF transmission line 504(2) and the RF transmission line 504(1), 504(3), with an intermediate space therebetween. The RF transmission line 504(3) is adjacent to both the RF transmission line 504(2) and the RF transmission line 504(4), with an intermediate space therebetween. The RF transmission line 504(4) is adjacent to the RF transmission line 504(3), with an intermediate space therebetween. These respective adjacent RF transmit lines may be positioned sufficiently close to one another in space so that EM waves generated by conduction of an RF signal in one RF transmit line 504(1)-504(4) generate a noise signal in another adjacent RF transmit line 504(1)-504(4).

[0039] like Figure 5B and Figure 5CAs shown, the substrate 500 in this example also includes a plurality of second metallization layers 505 (1), which include a second metallization layer 502 (2) and a third metallization layer 502 (3) that are parallel to each other and positioned above the first metallization layer 502 (1) in the second direction (Z-axis direction). The second metallization layer 502 (2) is adjacent to the first metallization layer 502 (1) and is located between the first metallization layer 502 (1) and the third metallization layer 502 (3) in the second direction (Z-axis direction). "Adjacent" metallization layers means that one metallization layer is spatially adjacent to or next to another metallization layer. For example, in this example, the third metallization layer 502 (3) is adjacent to the second metallization layer 502 (2) with an intermediate space therebetween. The second metallization layer 502(2) is adjacent to the first metallization layer 502(1) and the RF transmit lines 504(1)-504(4) disposed in the first metallization layer 502(1).

[0040] In this example, the substrate 500 also includes a plurality of third metallization layers 505(2), which include a fourth metallization layer 502(4) and a fifth metallization layer 502(5) that are parallel to each other and positioned below the first metallization layer 502(1) in the second direction (Z-axis direction). The fourth metallization layer 502(4) is directly adjacent to the first metallization layer 502(1) and is located between the first metallization layer 502(1) and the fifth metallization layer 502(5) in the second direction (Z-axis direction). The first metallization layer 502(1) is also located between the plurality of second metallization layers 505(1) and the plurality of third metallization layers 505(2) in the second direction (Z-axis direction). For example, in this example, the fifth metallization layer 502(5) is adjacent to the fourth metallization layer 502(4) with an intermediate space therebetween. The fourth metallization layer 502(4) is adjacent to the first metallization layer 502(1) and the RF transmit lines 504(1)-504(4) disposed in the first metallization layer 502(1).

[0041] In order to isolate the RF transmission lines 504(1)-504(4), the third metallization layer 502(3) and the fifth metallization layer 502(5) are ground planes, which are positioned adjacent to and above and below the RF transmission lines 504(1)-504(4) in the second direction (Z-axis direction). In addition, in order to isolate the corresponding RF transmission lines 504(1)-504(4) from each other, there may not be enough lateral space in the third direction (Y-axis direction) to form vias to connect to the third metallization layer 502(3) and the fifth metallization layer 502(5) as the ground planes, as shown in FIG. Figure 5B and Figure 5CAs shown, the corresponding first conductor loop structures 506(1)(1)-506(1)(3) and the second conductor loop structures 506(2)(1)-506(2)(3) are formed in the corresponding plurality of second metallization layers 505(1) and the plurality of third metallization layers 505(2), which are conceptually similar to those described above. Figure 4A and Figure 4B The first conductor loop structure 404(1) and the second conductor loop structure 404(2) in FIG. Figure 5B A first conductor loop structure 506 ( 1 )( 1 ) and a second conductor loop structure 506 ( 2 )( 1 ) are shown. Figure 5C An end view of first conductor loop structures 506(1)(1)-506(1)(3) and second conductor loop structures 506(2)(1)-506(2)(3) extending in the X-axis direction is shown. In this example, only three (3) first conductor loop structures 506(1)(1)-506(1)(3) and three (3) second conductor loop structures 506(2)(1)-506(2)(3) are provided because each first conductor loop structure 506(1)(1)-506(1)(3), second conductor loop structure 506(2)(1)-506(2)(3) is disposed between corresponding adjacent RF transmission lines 504(1)-504(4).

[0042] For further detailed explanation, the Figure 6A and Figure 6B , which are Figure 5B and Figure 5C Close-up view of. Figure 6A A first conductor loop structure 506(1)(1) and a second conductor loop structure 506(2)(1) are shown. Figure 6AAs shown, in this example, the first conductor loop structure 506(1)(1) includes six (6) first conductor loops 508(1)(1)-508(1)(6), each of which is arranged in a corresponding plane P4 orthogonal to the plane P3 of the first metallization layer 502(1), so that the first conductor loop structure 506(1)(1) is positioned above the first metallization layer 502(1) and the RF transmission lines 504(1), 504(2) in the second direction (Z-axis direction). This allows the first conductor loops 508(1)(1)-508(1)(6) to be oriented so as to be penetrable by the magnetic flux of the magnetic field generated by the RF signal in the adjacent RF transmission lines 504(1), 504(2). The first conductor loops 508(1)(1)-508(1)(6) are adjacent to the RF transmission lines 504(1), 504(2), which means that the first conductor loops 508(1)(1)-508(1)(6) are spatially adjacent to or next to the RF transmission lines 504(1), 504(2). The first conductor loops 508(1)(1)-508(1)(6) are formed by first metal lines 510(1) and second metal lines 510(2) that are parallel to each other and formed in respective second metallization layers 502(2) and third metallization layers 502(3) and coupled together through vias 512(1)-512(7). In this manner, a closed conductor loop is formed by coupling the metal materials of the first metal lines 510(1) and the second metal lines 510(2) with the adjacent vias 512(1)-512(7). For example, first conductor loop 508(1)(1) is formed by coupling vias 512(1), 512(2) to first metal line 510(1) and second metal line 510(2) in second metallization layer 502(2) and third metallization layer 502(3). First conductor loop 508(1)(6) is formed by coupling vias 512(6), 512(7) to first metal line 510(1) and second metal line 510(2) in second metallization layer 502(2) and third metallization layer 502(3). Thus, in this example, first conductor loops 508(1)(1)-508(1)(6) of first conductive loop structure 506(1)(1) can be formed using a structure of metal lines and vias conventionally formed in a substrate to provide routing signal paths.

[0043] In addition, Figure 6AAs shown, in this example, the second conductor loop structure 506(2)(1) also includes six (6) second conductor loops 508(2)(1)-508(2)(6), each of which is arranged in a corresponding plane P5 orthogonal to the plane P3 of the first metallization layer 502(1). The second conductor loop structure 506(1)(2) is positioned adjacent to and below the first metallization layer 502(1) and the RF transmission lines 504(1), 504(2) in the second direction (Z-axis direction). This allows the second conductor loops 508(2)(1)-508(2)(6) to be oriented so as to be penetrable by the magnetic flux of the magnetic field generated by the RF signal in the RF transmission lines 504(1), 504(2). The second conductor loops 508(2)(1)-508(2)(6) are also adjacent to the RF transmission lines 504(1), 504(2), but are located on the other side of the first conductor loops 508(1)(1)-508(1)(6) in the vertical direction (Z-axis direction). The second conductor loops 508(2)(1)-508(2)(6) are adjacent to the RF transmission lines 504(1), 504(2) meaning that the second conductor loops 508(2)(1)-508(2)(6) are spatially adjacent to or next to the RF transmission lines 504(1), 504(2). The second conductor loops 508(2)(1)-508(2)(6) are formed by the third metal line 510(3) and the fourth metal line 510(4) formed in parallel with each other and formed in the respective fourth metallization layer 502(4) and the fifth metallization layer 502(5) coupled together through vias 514(1)-514(7). In this manner, a closed conductor loop is formed by coupling the metal material of the third metal line 510(3) and the fourth metal line 510(4) with the adjacent vias 514(1)-514(7). For example, the second conductor loop 508(2)(1) is formed by coupling the vias 514(1), 514(2) to the third metal line 510(3) and the fourth metal line 510(4) in the fourth metallization layer 502(4) and the fifth metallization layer 502(5). The second conductor loop 508(2)(6) is formed by coupling the vias 514(6), 514(7) to the third metal line 510(3) and the fourth metal line 510(4) in the fourth metallization layer 502(4) and the fifth metallization layer 502(5). Thus, in this example, the second conductor loops 508(2)(1)-508(2)(6) of the second conductive loop structure 506(2)(1) may be formed using a structure of metal lines and vias conventionally formed in a substrate to provide routing signal paths.

[0044] Note that due to Figure 6A, only the first conductor loop structure 506(1)(1) and the second conductor loop structure 506(2)(1) are shown, which are arranged adjacent to the first RF transmission line 504(1) and the second RF transmission line 504(2) to substantially reduce or eliminate induced noise from one RF transmission line 504(1), 504(2) to the other RF transmission line 504(2), 504(1). However, Figure 6B Shown Figure 5A A front cross-sectional view of the substrate 500 across the A4-A4' section line. Figure 6B , an end-on view of the RF transmission lines 504(1)-504(4) is shown. Vias 512(7), 514(7) are shown, which are part of the respective first conductor loop 508(1)(6) and the second conductor loop 508(2)(6) in the respective first conductive loop structure 506(1)(1) and the second conductive loop structure 506(2)(1). Other vias 516(7), 518(7) are shown, which are part of the respective first conductor loop and the second conductor loop in the respective first conductive loop structure 506(1)(2) and the second conductive loop structure 506(2)(2) disposed between the respective adjacent RF transmission lines 504(2), 504(3). Other vias 520(7), 522(7) are also shown, which are part of the respective first conductor loop and the second conductor loop in the respective first conductive loop structure 506(1)(3) and the second conductive loop structure 506(2)(3) disposed between the respective adjacent RF transmission lines 504(3), 504(4). in other words, Figure 6A Only the first conductive loop structure 506(1)(1) and the second conductive loop structure 506(2)(1) vertically arranged in the second direction (Z-axis direction) between the first RF transmission line 504(1) and the second RF transmission line 504(2) are shown, but it is noted that the other first conductive loop structures 506(1)(2), 506(1)(3) and the second conductive loop structures 506(2)(2), 506(2)(3) are formed similarly to the first conductive loop structure 506(1)(1) and the second conductive loop structure 506(2)(1) to reduce or eliminate noise between the corresponding second RF transmission line 504(2) and the third RF transmission line 504(3) and the fourth RF transmission line 504(4).

[0045] Return Reference Figure 6A, using the first conductor loop structure 506(1)(1) and the second conductor loop structure 506(2)(1) as examples, the first conductor loop structure 506(1)(1) and the second conductor loop structure 506(2)(1) are oriented in this example so that the planes P4, P5 of their respective first conductor loops 508(1)(1)-508(2)(6) and second conductor loops 508(2)(1)-508(2)(6) are perpendicular to the direction of the magnetic flux of the first magnetic field passing through the first conductor loops 508(1)(1)-508(2)(6) and the second conductor loops 508(2)(1)-508(2)(6), the first magnetic field being a result of the RF signal in the first RF transmit line 504(1) and / or the second RF transmit line 504(2). Furthermore, in this example, the first conductor loop structure 506(1)(1) and the second conductor loop structure 506(2)(1) are aligned along the longitudinal axis LA1 in a second vertical direction (Z-axis direction) and are offset in a third lateral direction (Y-axis direction) to be located between the RF transmission lines 504(1) and 504(2). Since the magnetic flux of the first magnetic field penetrates the first conductor loop 508(1)(1)-508(2)(6) and the second conductor loop 508(2)(1)-508(2)(6), eddy currents are induced in the first conductor loop 508(1)(1)-508(2)(6) and the second conductor loop 508(2)(1)-508(2)(6). These eddy currents flowing in the first conductor loop 508(1)(1)-508(2)(6) and the second conductor loop 508(2)(1)-508(2)(6) then generate an induced second magnetic field in the opposite direction of the first magnetic field, which interferes with the first magnetic field, thereby generating a magnetic damping force in the first magnetic field, which significantly weakens or cancels the first magnetic field. This has the effect of reducing or canceling noise induced into one RF transmission line 504(1), 504(2) by the other RF transmission line 504(2), 504(1) carrying the RF signal.

[0046] Note that the above explanation of the structure and magnetic field operation of the first conductor loop structure 506(1)(1) and the second conductor loop structure 506(2)(1) also applies to the first conductor loop structure 506(1)(2) and the second conductor loop structure 506(2)(2) with respect to the RF transmission lines 504(2), 504(3). The first conductor loop structure 506(1)(2) and the second conductor loop structure 506(2)(2) are adjacent to the RF transmission lines 504(2), 504(3). The above explanation of the structure and magnetic field operation of the first conductor loop structure 506(1)(1) and the second conductor loop structure 506(2)(1) also applies to the first conductor loop structure 506(1)(3) and the second conductor loop structure 506(2)(3) with respect to the RF transmission lines 504(3), 504(4). The first conductor loop structure 506(1)(3) and the second conductor loop structure 506(2)(3) are adjacent to the RF transmission lines 504(3), 504(4). The first conductor loop structure 506(1)(1) and the second conductor loop structure 506(2)(1) are laterally offset from the corresponding first conductor loop structure 506(1)(2) and the second conductor loop structure 506(2)(2) in a first direction (X-axis direction). The first conductor loop structure 506(1)(2) and the second conductor loop structure 506(2)(2) are laterally offset from the corresponding first conductor loop structure 506(1)(3) and the second conductor loop structure 506(2)(3) in a first direction (X-axis direction).

[0047] Figure 8A and Figure 8B They are Figures 5A to 5C Graphs 800, 802 of example noise coupling between RF transmission lines 504(1)-504(4) in substrate 500 as a function of the frequency of the RF signals carried in the RF transmission lines 504(1)-504(4) without and with the conductor loop structure, respectively. Figure 5C The substrate 500 illustrated in is also Figure 7 In Figure 7 In the example of substrate 500 in FIG, directly adjacent RF transmission lines are RF transmission lines 504(1), 504(2), RF transmission lines 504(2), 504(3), and RF transmission lines 504(3), 504(4). Figure 7In the example of the substrate 500 in FIG. 1 , the RF transmission lines that are not directly adjacent to each other are the RF transmission lines 504(1) and 504(3) and the RF transmission lines 504(2) and 504(4). The RF transmission line 504(2) is disposed between the RF transmission lines 504(1) and 504(3), and therefore, the RF transmission lines 504(1) and 504(3) are not directly adjacent to each other. The RF transmission line 504(3) is disposed between the RF transmission lines 504(2) and 504(4), and therefore, the RF transmission lines 504(2) and 504(4) are not directly adjacent to each other.

[0048] like Figure 8A As shown in the graph 800, curve 804 shows that Figures 5A to 5C Exemplary coupling between adjacent RF transmit lines 504(1)-504(4) as a function of frequency for the conductor loop structure provided in substrate 500 is shown. Figure 8A Curve 806 in FIG. 1 shows that the Figures 5A to 5C Example coupling between adjacent RF transmit lines 504(1)-504(4) as a function of frequency for a conductor loop structure provided in substrate 500. Figure 8A As shown, for an RF signal of approximately 45 GHz, noise coupling is reduced by 12 dB in this example, from -18 dB to -30 dB.

[0049] like Figure 8B As shown in the graph 802, curve 808 shows that Figures 5A to 5C Exemplary coupling between non-directly adjacent RF transmit lines 504(1)-504(4) as a function of frequency for the case of the conductor loop structure provided in substrate 500 is shown. Figure 8B Curve 810 in FIG. 1 shows that the Figures 5A to 5C Exemplary coupling between non-directly adjacent RF transmit lines 504(1)-504(4) as a function of frequency for the case of a conductor loop structure provided in substrate 500. Figure 8B As shown, for an RF signal of approximately 45 GHz, noise coupling is reduced by 21 dB in this example from -39 dB to -61 dB.

[0050] There are various ways in which a substrate including an RF transmission line routed in a first metallization layer and adjacent upper and lower metallization layers may be formed and manufactured, the substrate having a vertical conductor loop formed therein and adjacent to the RF transmission line to reduce or eliminate magnetic flux generated by the RF transmission line, including but not limited to Figure 1 、 Figures 5A to 5C 、 Figures 6A to 6B and Figure 7The substrate 102, 500 in Figure 1 In the antenna module 100.

[0051] In this regard, Figure 9 is an example of a method for manufacturing an antenna module (including Figure 1 Flowchart of an exemplary manufacturing process 900 of a substrate in an antenna module 100 in FIG. The substrate may include an RF transmission line routed in a first metallization layer and an upper metallization layer and a lower metallization layer having a vertical conductor loop formed therein and adjacent to the RF transmission line to reduce or eliminate the magnetic field generated by the RF transmission line, including but not limited to Figures 5A to 5C 、 Figures 6A to 6B 、 Figure 7 A to Figure 7 E and the substrate of FIG8, and may include Figure 1 The antenna module in the Figures 5A to 5C The manufacturing process 900 is discussed with reference to the substrate 500 in FIG. 9 , but note that this is not limiting.

[0052] In this regard, a first step in the manufacturing process 900 may be to form a first metallization layer 502(1) ( Figure 9 The next step in the manufacturing process 900 may be to form in the first metallization layer 502(1) a first RF transmission line 504(1)-504(4) extending in a first direction (X-axis direction) in a first plane P3 ( Figure 9 904 in the manufacturing process 900). The next step in the manufacturing process 900 may be to form a second RF transmission line 504(1)-504(4) adjacent to the first RF transmission line 504(1)-504(4) in the first metallization layer 502(1) ( Figure 9 906 in the fabrication process 900). The next step in the fabrication process 900 may be to form a plurality of second metallization layers 505(1) parallel to the first metallization layer 502(1) ( Figure 9 The next step in the manufacturing process 900 may be to form first conductor loop structures 506(1)(1)-506(1)(3) in the plurality of second metallization layers 505(1) adjacent to the first RF transmit lines 504(1)-504(4) and the second RF transmit lines 504(1)-504(4), wherein the first conductor loop structures 506(1)(1)-506(1)(3) include one or more first conductor loops 508(1)(1)-508(1)(6), each first conductor loop being in a second plane P4 orthogonal to the first plane P3 ( Figure 9The next step in the manufacturing process 900 may be to form a plurality of third metallization layers 502(2) parallel to the first metallization layer 505(1), wherein the first metallization layer 502(1) is located between the plurality of second metallization layers 505(1) and the plurality of third metallization layers 505(2) in a second direction (Z-axis direction) orthogonal to the first plane P3 ( Figure 9 The next step in the manufacturing process 900 may be to form a second conductor loop structure 506(2)(1)-506(2)(3) in the plurality of third metallization layers 505(2) adjacent to the first RF transmit lines 504(1)-504(4) and the second RF transmit lines 504(1)-504(4), the second conductor loop structure 506(2)(1)-506(2)(3) including one or more second conductor loops 508(2)(1)-508(2)(6), each second conductor loop being in a third plane P5 orthogonal to the first plane P1 ( Figure 9 914 in the figure).

[0053] Note, as an example, Figure 9 The manufacturing process 900 does not need to be in a particular order. For example, the RF transmit lines 504(1)-504(4) need not be manufactured before the first metallization layer 505(1) and the second metallization layer 505(2) are manufactured. The manufacturing process 900 also does not require that the RF transmit lines 504(1)-504(4) be manufactured before the first conductor loop structures 506(1)(1)-506(1)(3) and the second conductor loop structures 506(2)(1)-506(2)(3) are manufactured in their respective first metallization layers 505(1) and second metallization layers 505(2). The manufacturing process 900 is also not limited to core substrate or coreless substrate manufacturing techniques. Other manufacturing methods are also possible. For example, FIG. 10A to FIG. 10B It is used to make similar Figure 1 、 Figures 5A to 5C 、 Figures 6A to 6B 、 Figure 7 A to Figure 7 E and the substrate 102, 500 in FIG. 8 and according to Figures 11A to 11C Flowchart of another exemplary manufacturing process 1000 of exemplary manufacturing stages 1100A-1100C in FIG. Figures 5A to 5C The substrate 500 in the example is discussed based on Figure 1 An exemplary manufacturing process 1000 of Figures 11A to 11C Manufacturing stages 1100A-1100C in.

[0054] In this regard, if Figure 11AAs shown in the exemplary manufacturing stage 1100A in FIG. 1 , the first step in the manufacturing process 1000 is to form a first metallization layer 502(1) ( Figure 10A 1002 in FIG. 1003 ). Figure 11B As shown in the exemplary manufacturing stage 1100B in FIG. 1 , the next step in the manufacturing process 1000 is to form a third metallization layer 505(2) including second conductive loop structures 506(2)(1)-506(2)(3) and couple the first metallization layer 502(1) to the third metallization layer 505(2) such that the RF transmit lines 504(1)-504(2) are adjacent to the corresponding second conductive loop structures 506(2)(1)-506(2)(3). Figure 10A 1004 in FIG. 1005 ). Figure 11C As shown in the exemplary manufacturing stage 1100C in FIG. 1 , the next step in the manufacturing process 1000 is to form a second metallization layer 505(1) including first conductive loop structures 506(1)(1)-506(1)(3) and couple the second metallization layer 505(1) to the first metallization layer 502(1) such that the RF transmit lines 504(1)-504(2) are also adjacent to the corresponding first conductive loop structures 506(1)(1)-506(1)(3) ( Figure 10B 1006 in FIG.

[0055] As discussed in this application, "adjacent" objects refer to one object being next to or adjacent to another object with an intervening space between them. Adjacent objects may not be physically coupled to one another. Directly adjacent objects mean that such objects are directly next to or adjacent to one another, with no other object intervening or disposed between the directly adjacent objects. Non-directly adjacent objects mean that such objects are not directly next to or adjacent to one another, with no other object intervening or disposed between the non-directly adjacent objects.

[0056] An antenna module comprising a substrate including an RF transmission line routed in a first metallization layer and upper and lower metallization layers having vertical conductor loops formed therein and adjacent to the RF transmission line to reduce or eliminate magnetic flux generated by the RF transmission line may be provided or integrated into any wireless communication device and / or processor-based device, the substrate including but not limited to Figure 1 、 Figures 5A to 5C 、 Figures 6A to 6B 、 Figure 7 A to Figure 7 E. Figure 8 and Figure 12 A to Figure 12 X in the substrate 102, 500, and may include Figure 1 In the antenna module 100, and according to FIG. 10 and Figures 11A to 11CExamples, without limitation, include a set-top box, an entertainment unit, a navigation device, a communication device, a fixed location data unit, a mobile location data unit, a global positioning system (GPS) device, a mobile phone, a cellular phone, a smart phone, a session initiation protocol (3iP) phone, a tablet, a phablet, a server, a computer, a portable computer, a mobile computing device, a wearable computing device (e.g., a smartwatch, a health or fitness tracker, glasses, etc.), a desktop computer, a personal digital assistant (PDA), a monitor, a computer monitor, a television, a tuner, a radio, a satellite radio, a music player, a digital music player, a portable music player, a digital video player, a video player, a digital video disc (DVD) player, a portable digital video player, an automobile, a vehicle component, an avionics system, a drone, and a multirotor aircraft.

[0057] Figure 12 An exemplary wireless communication device 1200 is illustrated that includes an RF component formed of one or more ICs 1202, wherein any of the ICs 1202 may be included in an antenna module 1203. The antenna module 1203 includes a substrate including an RF transmission line routed in a first metallization layer, and upper and lower metallization layers having vertical conductor loops formed therein and adjacent to the RF transmission line to reduce or eliminate magnetic flux generated by the RF transmission line, the substrate including but not limited to: Figure 1 、 Figures 5A to 5C 、 Figures 6A to 6B 、 Figure 7 and Figures 11A to 11C The substrate 102, 500 in Figure 1 In the antenna module 100, and according to Figure 9 and FIG. 10A to FIG. 10B Any one of the manufacturing processes 900 and 1000 in the manufacturing process. Figure 12 As shown, the wireless communication device 1200 includes an RF transceiver 1204 and a data processor 1206. Components of the RF transceiver and / or data processor 1206 may be split between a plurality of different die packages 1205(1), 1205(2). The data processor 1206 may include memory for storing data and program code. The RF transceiver 1204 includes a transmitter 1208 and a receiver 1210 that support bidirectional communication. In general, the wireless communication device 1200 may include any number of transmitters 1208 and / or receivers 1210 for any number of communication systems and frequency bands. All or a portion of the RF transceiver 1204 may be implemented on one or more analog ICs, RFICs, mixed-signal ICs, etc.

[0058] The transmitter 1208 or the receiver 1210 may be implemented using a superheterodyne architecture or a direct conversion architecture. In a superheterodyne architecture, the signal is converted between RF and baseband in multiple stages, for example, in the case of the receiver 1210, from RF to an intermediate frequency (IF) in one stage, and then from IF to baseband in another stage. In a direct conversion architecture, the signal is converted between RF and baseband in one stage. Superheterodyne and direct conversion architectures may use different circuit blocks and / or have different requirements. Figure 12 In the wireless communication device 1200 in FIG. 1 , the transmitter 1208 and the receiver 1210 are implemented using a direct conversion architecture.

[0059] In the transmit path, the data processor 1206 processes the data to be transmitted and provides I and Q analog output signals to the transmitter 1208. In the exemplary wireless communication device 1200, the data processor 1206 includes digital-to-analog converters (DACs) 1212(1), 1212(2) to convert the digital signals generated by the data processor 1206 into I and Q analog output signals (e.g., I and Q output currents) for further processing.

[0060] Within transmitter 1208, low-pass filters 1214(1), 1214(2) filter the I and Q analog output signals, respectively, to remove undesired signals caused by the preceding digital-to-analog conversion. Amplifiers (AMPs) 1216(1), 1216(2) amplify the signals from low-pass filters 1214(1), 1214(2), respectively, and provide I and Q baseband signals. An upconverter 1218 upconverts the I and Q baseband signals with I and Q TX local oscillator (LO) signals from a transmit (TX) local oscillator (LO) signal generator 1222 via mixers 1220(1), 1220(2) to provide an upconverted signal 1224. A filter 1226 filters the upconverted signal 1224 to remove undesired signals caused by the signal upconversion and noise in the receive band. A power amplifier (PA) 1228 amplifies the upconverted signal 1224 from the filter 1226 to obtain a desired output power level and provides a transmit RF signal. The transmit RF signal is routed through a duplexer or switch 1230 and transmitted via an antenna 1232.

[0061] In the receive path, antenna 1232 receives the signal transmitted by the base station and provides a received RF signal, which is routed through a duplexer or switch 1230 and provided to a low noise amplifier (LNA) 1234. The duplexer or switch 1230 is designed to operate with a specific receive (RX) and TX duplexer frequency separation so that the RX signal is isolated from the TX signal. The received RF signal is amplified by LNA 1234 and filtered by filter 1236 to obtain the desired RF input signal. Down-conversion mixers 1238 (1), 1238 (2) mix the output of filter 1236 with the I and Q RX LO signals (i.e., LO_I and LO_Q) from RX LO signal generator 1240 to generate I and Q baseband signals. The I and Q baseband signals are amplified by AMPs 1242(1), 1242(2) and further filtered by low-pass filters 1244(1), 1244(2) to obtain I and Q analog input signals, which are provided to the data processor 1206. In this example, the data processor 1206 includes analog-to-digital converters (ADCs) 1246(1), 1246(2) to convert the analog input signals into digital signals that are further processed by the data processor 1206.

[0062] exist Figure 12 In wireless communication device 1200, TX LO signal generator 1222 generates I and Q TX LO signals for upconversion, while RX LO signal generator 1240 generates I and Q RX LO signals for downconversion. Each LO signal is a periodic signal with a specific fundamental frequency. TX phase-locked loop (PLL) circuit 1248 receives timing information from data processor 1206 and generates control signals for adjusting the frequency and / or phase of the TX LO signal from TX LO signal generator 1222. Similarly, RX PLL circuit 1250 receives timing information from data processor 1206 and generates control signals for adjusting the frequency and / or phase of the RX LO signal from RX LO signal generator 1240.

[0063] Figure 13 An example of a processor-based system 1300 is illustrated, the processor-based system including circuitry that may be disposed in a substrate including an RF transmit line routed in a first metallization layer, and upper and lower metallization layers having vertical conductor loops formed therein and adjacent to the RF transmit line to reduce or eliminate magnetic flux generated by the RF transmit line, the substrate including but not limited to Figure 1 、 Figures 5A to 5C 、 Figures 6A to 6B 、 Figure 7 and Figures 11A to 11C The substrate 102, 500 in Figure 1In the antenna module 100, and according to Figure 9 and FIG. 10A to FIG. 10B 1000 . In this example, the processor-based system 1300 may be formed as an IC 1304 in the antenna module 1302 and as a system on a chip (SoC) 1306. The processor-based system 1300 includes a central processing unit (CPU) 1308, which includes one or more processors 1310, which may also be referred to as CPU cores or processor cores. The CPU 1308 may have a cache memory 1312 coupled to the CPU 1308 for fast access to temporarily stored data. The CPU 1308 is coupled to a system bus 1314 and may couple master devices and slave devices included in the processor-based system 1300 to each other. As is well known, the CPU 1308 communicates with these other devices by exchanging address, control, and data information via the system bus 1314. For example, the CPU 1308 may communicate a bus transaction request to a memory controller 1316, which is an example of a slave device. Although in Figure 13 Although not illustrated, multiple system buses 1314 may be provided, with each system bus 1314 forming a different structure.

[0064] Other master devices and slave devices may be connected to the system bus 1314. Figure 13 As illustrated, these devices may include, for example, a memory system 1320, which may be in a separate antenna module 1302(2) and include a memory controller 1316 and a memory array 1318, one or more input devices 1322 (which may be in a separate antenna module 1302(3)), one or more output devices 1324 (which may be in a separate antenna module 1302(4)), one or more network interface devices 1326, and one or more display controllers 1328. Each of the memory system 1320, one or more input devices 1322, one or more output devices 1324, one or more network interface devices 1326, and one or more display controllers 1328 may be located in the same or different antenna module 1302(5). The input device 1322 may include any type of input device, including, but not limited to, input keys, switches, voice processors, and the like. The output device 1324 may include any type of output device, including, but not limited to, audio, video, other visual indicators, and the like. The network interface device 1326 may be any device configured to allow data to be exchanged to or from the network 1330. The network 1330 can be any type of network, including but not limited to wired or wireless networks, private or public networks, local area networks (LANs), wireless local area networks (WLANs), wide area networks (WANs), Bluetooth TMNetwork and Internet. The network interface device 1326 may be configured to support any type of communication protocol desired.

[0065] The CPU 1308 may also be configured to access a display controller 1328 via the system bus 1314 to control information transmitted to one or more displays 1332. The display controller 1328 transmits information to be displayed to the display 1332 via one or more video processors 1334, which process the information to be displayed into a format suitable for the display 1332. By way of example, the display controller 1328 and the video processor 1334 may be included as ICs in the same or different antenna module 1302(5) and in the same or different antenna module 1302(1) that includes the CPU 1308. The display 1332 may include any type of display, including but not limited to a cathode ray tube (CRT), a liquid crystal display (LCD), a plasma display, a light emitting diode (LED) display, and the like.

[0066] Those skilled in the art will further understand that the various illustrative logic blocks, modules, circuits, and algorithms described in conjunction with the various aspects disclosed herein can be implemented as electronic hardware, instructions stored in a memory or another computer-readable medium and executed by a processor or other processing device, or a combination of the two. The memory disclosed herein can be a memory of any type and size and can be configured to store any type of information desired. In order to clearly illustrate this interchangeability, the functionality of various illustrative components, blocks, modules, circuits, and steps has been generally described above. How such functionality is implemented depends on the specific application, design choice, and / or design constraints imposed on the overall system. Those skilled in the art can implement the described functionality in different ways for each specific application, but such specific implementation decisions should not be interpreted as resulting in departure from the scope of this disclosure.

[0067] The various illustrative logical blocks, modules, and circuits described in conjunction with the various aspects disclosed herein may be implemented or performed with a processor, a digital signal processor (DSP), an application specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic device, discrete gate or transistor logic components, discrete hardware components, or any combination thereof designed to perform the functions described herein. The processor may be a microprocessor, but in the alternative, the processor may be any conventional processor, controller, microcontroller, or state machine. The processor may also be implemented as a combination of computing devices (e.g., a combination of a DSP and a microprocessor, a plurality of microprocessors, one or more microprocessors in conjunction with a DSP core, or any other such configuration).

[0068] The various aspects disclosed herein may be embodied in hardware and instructions stored in hardware and may reside in, for example, random access memory (RAM), flash memory, read-only memory (ROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), registers, a hard disk, a removable disk, a CD-ROM, or any other form of computer-readable medium known in the art. An exemplary storage medium is coupled to the processor such that the processor can read information from and write information to the storage medium. In an alternative embodiment, the storage medium may be integral to the processor. The processor and storage medium may reside in an ASIC. The ASIC may reside in a remote station. In an alternative embodiment, the processor and storage medium may reside as discrete components in a remote station, a base station, or a server.

[0069] It is also noted that the operational steps described in any of the exemplary aspects herein are described for the purpose of providing examples and discussion. The described operations may be performed in many different orders other than the order illustrated. In addition, the operations described in a single operational step may actually be performed in a plurality of different steps. In addition, one or more operational steps discussed in the exemplary aspects may be combined. It will be understood that, as will be apparent to those skilled in the art, many different modifications may be made to the operational steps illustrated in the flow chart. Those skilled in the art will also understand that any of a variety of different technologies and techniques may be used to represent information and signals. For example, data, instructions, commands, information, signals, bits, symbols, and chips that may be mentioned throughout the above description may be represented by voltage, current, electromagnetic waves, magnetic fields or magnetic particles, light fields or optical particles, or any combination thereof.

[0070] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations. Therefore, the disclosure is not intended to be limited to the examples and designs described herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0071] Specific implementation examples are described in the following numbered clauses:

[0072] 1. A substrate, comprising:

[0073] A first metallization layer is located in a first plane and includes

[0074] include:

[0075] a first radio frequency (RF) transmission line extending in a first direction in the first plane; and a second RF transmission line adjacent to the first RF transmission line;

[0076] A plurality of second metallization layers, the plurality of second metallization layers being parallel to the first

[0077] The metallization layer comprises:

[0078] a first conductor loop structure, the first conductor loop structure being adjacent to the first RF transmission line and the second RF transmission line, the first conductor loop structure comprising one or more first conductor loops, each first conductor loop being located in a second plane orthogonal to the first plane; and

[0079] a plurality of third metallization layers, the plurality of third metallization layers being parallel to the first metallization layer, wherein the first metallization layer is located between the plurality of second metallization layers and the plurality of third metallization layers in a second direction orthogonal to the first plane;

[0080] between;

[0081] The plurality of third metallization layers include:

[0082] A second conductor loop structure is adjacent to the first RF transmission line and the second RF transmission line, the second conductor loop structure includes one or more second conductor loops, each second conductor loop is located in a third plane orthogonal to the first plane.

[0083] 2. A substrate according to claim 1, wherein the first RF transmission line is configured to generate a magnetic flux in the one or more first conductor loops and the one or more second conductor loops in response to an RF signal in the first RF transmission line to induce eddy currents in the one or more first conductor loops and the one or more second conductor loops, the eddy currents causing a magnetic damping force in the magnetic flux.

[0084] 3. A substrate according to clause 1 or 2, wherein:

[0085] The first conductor loop structure is orthogonal to the first plane of the first metallization layer; and

[0086] The second conductor loop structure is orthogonal to the first plane of the first metallization layer.

[0087] 4. A substrate according to any one of clauses 1 to 3, wherein:

[0088] Each of the second planes of the one or more first conductor loops is aligned with a corresponding third plane of the one or more second conductor loops in the second direction.

[0089] 5. A substrate according to any one of clauses 1 to 4, wherein:

[0090] The plurality of second metallization layers are adjacent to the first metallization layer; and

[0091] The plurality of third metallization layers are adjacent to the first metallization layer.

[0092] 6. A substrate according to any one of clauses 1 to 5, wherein:

[0093] The plurality of second metallization layers include:

[0094] a second metallization layer adjacent to the first metallization layer and comprising a second metal line;

[0095] a third metallization layer adjacent to the second metallization layer and comprising a third metal line parallel to the second metal line; and a plurality of first vias, each first via coupling the second metal line to the third metal line to form the one or more first conductor loops of the first conductor loop structure; and

[0096] The plurality of third metallization layers include:

[0097] a fourth metallization layer, the fourth metallization layer being adjacent to the first metallization layer and comprising a fourth metal line;

[0098] a fifth metallization layer adjacent to the fourth metallization layer and comprising a fifth metal line parallel to the fourth metal line; and

[0099] A plurality of second vias, each second via coupling the fourth metal line to the fifth metal line to form the one or more second conductor loops of the second conductor loop structure.

[0100] 7. A substrate according to clause 6, wherein:

[0101] The second metallization layer is located between the first metallization layer and the third metallization layer in the second direction; and

[0102] The fourth metallization layer is located between the first metallization layer and the fifth metallization layer in the second direction.

[0103] 8. The substrate of clause 1, wherein:

[0104] The first metallization layer further comprises:

[0105] a third RF transmit line; and

[0106] a fourth RF transmission line, the fourth RF transmission line being adjacent to the third RF transmission line;

[0107] The plurality of second metallization layers further include:

[0108] a third conductor loop structure, the third conductor loop structure being adjacent to the third RF transmission line and the fourth RF transmission line, the third conductor loop structure comprising one or more third conductor loops, each third conductor loop being located in a fourth plane orthogonal to the first plane; and

[0109] The plurality of third metallization layers further include:

[0110] A fourth conductor loop structure is adjacent to the third RF transmission line and the fourth RF transmission line, the fourth conductor loop structure comprising one or more fourth conductor loops, each fourth conductor loop being located in a fifth plane orthogonal to the first plane.

[0111] 9. The substrate according to clause 8, wherein:

[0112] each of the second planes of the one or more first conductor loops is aligned with the third plane of the one or more second conductor loops in the second direction;

[0113] each of the fourth planes of the one or more third conductor loops is aligned with the fifth plane of the one or more fourth conductor loops in the second direction;

[0114] The first conductor loop structure is laterally offset from the third conductor loop structure in the first direction; and

[0115] The second conductor loop structure is laterally offset from the fourth conductor loop structure in the first direction.

[0116] 10. A substrate according to clause 8 or 9, wherein:

[0117] The plurality of second metallization layers include:

[0118] a second metallization layer adjacent to the first metallization layer and comprising a second metal line and a fourth metal line parallel to the second metal line;

[0119] a third metallization layer adjacent to the second metallization layer and comprising a third metal line parallel to the second metal line and a fifth metal line parallel to the third metal line;

[0120] a plurality of first vias, each first via coupling the second metal line to the third metal line to form the one or more first conductor loops of the first conductor loop structure; and

[0121] a plurality of second vias, each second via coupling the fourth metal line to the fifth metal line to form the one or more second conductor loops of the second conductor loop structure; and

[0122] The plurality of third metallization layers include:

[0123] a fourth metallization layer, the fourth metallization layer being adjacent to the first metallization layer and comprising a sixth metal line and an eighth metal line parallel to the sixth metal line;

[0124] a fifth metallization layer adjacent to the fourth metallization layer and comprising a seventh metal line parallel to the sixth metal line and a ninth metal line parallel to the seventh metal line;

[0125] a plurality of third vias, each third via coupling the sixth metal line to the eighth metal line to form the one or more third conductor loops of the third conductor loop structure; and

[0126] A plurality of fourth vias are provided, each fourth via coupling the seventh metal line to the ninth metal line to form the one or more fourth conductor loops of the fourth conductor loop structure.

[0127] 11. The substrate of any of clauses 1 to 10, wherein the second RF transmit line is parallel to the first RF transmit line.

[0128] 12. A substrate according to any one of clauses 1 to 11, wherein:

[0129] The plurality of second metallization layers further includes a first ground plane;

[0130] the first conductor loop structure being coupled to the first ground plane;

[0131] The plurality of third metallization layers further includes a second ground plane; and

[0132] The second conductor loop structure is coupled to the second ground plane.

[0133] 13. The substrate of clause 12, further comprising one or more metal interconnects coupling the first ground plane to the second ground plane.

[0134] 14. The substrate of any of clauses 1 to 13, wherein the first RF transmit line and the second RF transmit line are disposed in the first metallization layer at a first pitch less than or equal to 100 micrometers (μm).

[0135] 15. A substrate according to any one of clauses 1 to 14, wherein the packaged substrate is integrated into a device selected from the group consisting of: a set-top box; an entertainment unit; a navigation device; a communication device; a fixed location data unit; a mobile location data unit; a global positioning system (GPS) device; a mobile phone; a cellular phone; a smart phone; a session initiation protocol (SiP) phone; a tablet computer; a phablet; a server; a computer; a portable computer; a mobile computing device; a wearable computing device; a desktop computer; a personal digital assistant (PDA); a monitor; a computer monitor; a television; a tuner; a radio; a satellite radio; a music player; a digital music player; a portable music player; a digital video player; a video player; a digital video disc (DVD) player; a portable digital video player; an automobile; a vehicle component; an avionics system; an unmanned aerial vehicle; and a multirotor aircraft.

[0136] 16. A method for manufacturing a substrate, the method comprising:

[0137] forming a first metallization layer in a first plane;

[0138] forming a first radio frequency (RF) transmission line in the first metallization layer extending in a first direction in the first plane;

[0139] forming a second RF transmit line adjacent to the first RF transmit line in the first metallization layer;

[0140] forming a plurality of second metallization layers parallel to the first metallization layer;

[0141] forming a first conductor loop structure adjacent to the first RF transmission line and the second RF transmission line in the plurality of second metallization layers, the first conductor loop structure comprising one or more first conductor loops, each first conductor loop being located in a second plane orthogonal to the first plane;

[0142] forming a plurality of third metallization layers parallel to the first metallization layer, wherein the first metallization layer is located between the plurality of second metallization layers and the plurality of third metallization layers in a second direction orthogonal to the first plane; and

[0143] A second conductor loop structure is formed in the plurality of third metallization layers adjacent to the first RF transmission line and the second RF transmission line, the second conductor loop structure including one or more second conductor loops, each second conductor loop being located in a third plane orthogonal to the first plane.

[0144] 17. The method according to clause 16, wherein:

[0145] forming the first conductor loop structure further comprises forming the first conductor loop structure orthogonal to the first plane of the first metallization layer; and

[0146] Forming the first conductor loop structure further includes forming the second conductor loop structure orthogonal to the first plane of the first metallization layer.

[0147] 18. The method of clause 16 or 17, wherein forming the first conductor loop structure further comprises aligning each of the second planes of the one or more first conductor loops with a corresponding third plane of the one or more second conductor loops in the second direction.

[0148] 19. A method according to any one of clauses 16 to 18, wherein:

[0149] forming the plurality of second metallization layers further comprises forming the plurality of second metallization layers adjacent to the first metallization layer; and

[0150] Forming the plurality of third metallization layers further includes forming the plurality of third metallization layers adjacent to the first metallization layer.

[0151] 20. A method according to any one of clauses 16 to 19, wherein:

[0152] Forming the plurality of second metallization layers comprises:

[0153] forming a second metallization layer adjacent to the first metallization layer and including a second metal line;

[0154] forming a third metallization layer adjacent to the second metallization layer and including a third metal line parallel to the second metal line; and forming a plurality of first vias, each first via coupling the second metal line to the third metal line to form the one or more first conductor loops of the first conductor loop structure; and

[0155] Forming the plurality of third metallization layers comprises:

[0156] forming a fourth metallization layer adjacent to the first metallization layer and including a fourth metal line;

[0157] forming a fifth metallization layer adjacent to the fourth metallization layer and including a fifth metal line parallel to the fourth metal line; and forming a plurality of second vias, each second via coupling the fourth metal line to the fifth metal line to form the one or more second conductor loops of the second conductor loop structure.

[0158] 21. A method according to any one of clauses 16 to 20, wherein:

[0159] Forming the first metallization layer further includes:

[0160] forming a third RF transmission line; and

[0161] forming a fourth RF transmission line adjacent to the third RF transmission line;

[0162] Forming the plurality of second metallization layers further comprises:

[0163] forming a third conductor loop structure adjacent to the third RF transmission line and the fourth RF transmission line, the third conductor loop structure comprising one or more third conductor loops, each third conductor loop being located in a fourth plane orthogonal to the first plane; and

[0164] Forming the plurality of third metallization layers further comprises:

[0165] A fourth conductor loop structure is formed adjacent to the third RF transmission line and the fourth RF transmission line, the fourth conductor loop structure including one or more fourth conductor loops, each fourth conductor loop being located in a fifth plane orthogonal to the first plane.

[0166] 22. The method according to clause 21, wherein:

[0167] forming the first conductor loop structure further comprises aligning each of the second planes of the one or more first conductor loops with the third plane of the one or more second conductor loops in the second direction; and

[0168] forming the third conductor loop structure further comprises aligning each of the fourth planes of the one or more third conductor loops with the fifth plane of the one or more fourth conductor loops in the second direction;

[0169] in:

[0170] The first conductor loop structure is connected to the third conductor in the first direction.

[0171] The body loop structure is laterally offset; and

[0172] The second conductor loop structure is connected to the fourth conductor in the first direction.

[0173] The body loop structure is laterally offset.

[0174] 23. An antenna module, comprising:

[0175] A substrate, comprising:

[0176] an antenna substrate including one or more antennas; and

[0177] a packaging substrate coupled to the antenna substrate; and

[0178] an integrated circuit (IC) die layer comprising a first die including a plurality of first die interconnects coupled to the package substrate;

[0179] The substrate comprises:

[0180] a first metallization layer located in a first plane and

[0181] include:

[0182] a first radio frequency (RF) transmission line extending in a first direction in the first plane, the first RF transmission line coupled to a first antenna of the one or more antennas; and

[0183] a second RF transmission line, the second RF transmission line being adjacent to the first RF transmission line, the second RF transmission line being coupled to a second antenna of the one or more antennas;

[0184] A plurality of second metallization layers, the plurality of second metallization layers being parallel to the

[0185] A first metallization layer comprising:

[0186] a first conductor loop structure, the first conductor loop structure being adjacent to the first RF transmission line and the second RF transmission line, the first conductor loop structure comprising one or more first conductor loops, each first conductor loop being located in a second plane orthogonal to the first plane; and

[0187] a plurality of third metallization layers, the plurality of third metallization layers being parallel to the first metallization layer, wherein the first metallization layer is located between the plurality of second metallization layers and the plurality of third metallization layers in a second direction orthogonal to the first plane;

[0188] The plurality of third metallization layers include:

[0189] a second conductor loop structure adjacent to the first RF transmit line and the second RF transmit line, the second conductor loop structure comprising one or more second conductors; and

[0190] The plurality of first die interconnects are coupled to the first RF transmit line and the second RF transmit line.

[0191] 24. An antenna module according to clause 23, wherein the first RF transmission line is configured to generate a magnetic flux in the one or more first conductor loops and the one or more second conductor loops in response to an RF signal in the first RF transmission line to induce eddy currents in the one or more first conductor loops and the one or more second conductor loops, the eddy currents causing a magnetic damping force in the magnetic flux.

[0192] 25. The antenna module according to clause 23 or 24, wherein:

[0193] The plurality of second metallization layers include:

[0194] a second metallization layer adjacent to the first metallization layer and comprising a second metal line;

[0195] a third metallization layer adjacent to the second metallization layer and comprising a third metal line parallel to the second metal line; and a plurality of first vias, each first via coupling the second metal line to the third metal line to form the one or more first conductor loops of the first conductor loop structure; and

[0196] The plurality of third metallization layers include:

[0197] a fourth metallization layer, the fourth metallization layer being adjacent to the first metallization layer and comprising a fourth metal line;

[0198] a fifth metallization layer adjacent to the fourth metallization layer and including a fifth metal line parallel to the fourth metal line; and a plurality of second vias, each second via coupling the fourth metal line to the fifth metal line to form the one or more second conductor loops of the second conductor loop structure.

[0199] 26. The antenna module of clause 25, wherein:

[0200] The second metallization layer is located between the first metallization layer and the third metallization layer in the second direction; and

[0201] The fourth metallization layer is located between the first metallization layer and the fifth metallization layer in the second direction.

[0202] 27. The antenna module of any of clauses 23 to 26, wherein:

[0203] The plurality of second metallization layers further includes a first ground plane;

[0204] the first conductor loop structure being coupled to the first ground plane;

[0205] The plurality of third metallization layers further includes a second ground plane; and

[0206] The second conductor loop structure is coupled to the second ground plane.

[0207] 28. An antenna module according to any one of clauses 23 to 27, wherein the antenna module is integrated into a device selected from the group consisting of: a set-top box; an entertainment unit; a navigation device; a communication device; a fixed location data unit; a mobile location data unit; a global positioning system (GPS) device; a mobile phone; a cellular phone; a smart phone; a session initiation protocol (SiP) phone; a tablet computer; a phablet; a server; a computer; a portable computer; a mobile computing device; a wearable computing device; a desktop computer; a personal digital assistant (PDA); a monitor; a computer monitor; a television; a tuner; a radio; a satellite radio; a music player; a digital music player; a portable music player; a digital video player; a video player; a digital video disc (DVD) player; a portable digital video player; an automobile; a vehicle component; an avionics system; an unmanned aerial vehicle; and a multirotor aircraft.

Claims

1. A substrate, comprising: A first metallization layer, the first metallization layer being located in a first plane and comprising: a first radio frequency (RF) transmission line, the first radio frequency (RF) transmission line being located in the first plane and extending in a first direction; and a second RF transmission line, the second RF transmission line being adjacent to the first RF transmission line; a plurality of second metallization layers, the plurality of second metallization layers being parallel to the first metallization layer and comprising: a first conductor loop structure, the first conductor loop structure being adjacent to the first RF transmission line and the second RF transmission line, the first conductor loop structure comprising one or more first conductor loops, each first conductor loop being located in a second plane orthogonal to the first plane; and a plurality of third metallization layers, the plurality of third metallization layers being parallel to the first metallization layer, wherein the first metallization layer is located between the plurality of second metallization layers and the plurality of third metallization layers in a second direction orthogonal to the first plane; The plurality of third metallization layers include: A second conductor loop structure is adjacent to the first RF transmission line and the second RF transmission line, the second conductor loop structure includes one or more second conductor loops, each second conductor loop is located in a third plane orthogonal to the first plane.

2. The substrate of claim 1 , wherein the first RF transmission line is configured to generate a magnetic flux in the one or more first conductor loops and the one or more second conductor loops in response to an RF signal in the first RF transmission line to induce eddy currents in the one or more first conductor loops and the one or more second conductor loops, the eddy currents causing a magnetic damping force in the magnetic flux.

3. The substrate according to claim 1, wherein: The first conductor loop structure is orthogonal to the first plane of the first metallization layer; and The second conductor loop structure is orthogonal to the first plane of the first metallization layer.

4. The substrate according to claim 1, wherein: Each of the second planes of the one or more first conductor loops is aligned with a corresponding third plane of the one or more second conductor loops in the second direction.

5. The substrate according to claim 1, wherein: The plurality of second metallization layers are adjacent to the first metallization layer; and The plurality of third metallization layers are adjacent to the first metallization layer.

6. The substrate according to claim 1, wherein: The plurality of second metallization layers include: a second metallization layer adjacent to the first metallization layer and comprising a second metal line; a third metallization layer adjacent to the second metallization layer and comprising third metal lines parallel to the second metal lines; and a plurality of first vias, each first via coupling the second metal line to the third metal line to form the one or more first conductor loops of the first conductor loop structure; and The plurality of third metallization layers include: a fourth metallization layer, the fourth metallization layer being adjacent to the first metallization layer and comprising a fourth metal line; a fifth metallization layer adjacent to the fourth metallization layer and comprising a fifth metal line parallel to the fourth metal line; and A plurality of second vias, each second via coupling the fourth metal line to the fifth metal line to form the one or more second conductor loops of the second conductor loop structure.

7. The substrate according to claim 6, wherein: The second metallization layer is located between the first metallization layer and the third metallization layer in the second direction; and The fourth metallization layer is located between the first metallization layer and the fifth metallization layer in the second direction.

8. The substrate according to claim 1, wherein: The first metallization layer further comprises: a third RF transmit line; and a fourth RF transmission line, the fourth RF transmission line being adjacent to the third RF transmission line; The plurality of second metallization layers further include: a third conductor loop structure, the third conductor loop structure being adjacent to the third RF transmission line and the fourth RF transmission line, the third conductor loop structure comprising one or more third conductor loops, each third conductor loop being located in a fourth plane orthogonal to the first plane; and The plurality of third metallization layers further include: A fourth conductor loop structure is adjacent to the third RF transmission line and the fourth RF transmission line, the fourth conductor loop structure comprising one or more fourth conductor loops, each fourth conductor loop being located in a fifth plane orthogonal to the first plane.

9. The substrate according to claim 8, wherein: each of the second planes of the one or more first conductor loops is aligned with the third plane of the one or more second conductor loops in the second direction; each of the fourth planes of the one or more third conductor loops is aligned with the fifth plane of the one or more fourth conductor loops in the second direction; The first conductor loop structure is laterally offset from the third conductor loop structure in the first direction; and The second conductor loop structure is laterally offset from the fourth conductor loop structure in the first direction.

10. The substrate according to claim 8, wherein: The plurality of second metallization layers include: a second metallization layer adjacent to the first metallization layer and comprising a second metal line and a fourth metal line parallel to the second metal line; a third metallization layer adjacent to the second metallization layer and comprising a third metal line parallel to the second metal line and a fifth metal line parallel to the third metal line; a plurality of first vias, each first via coupling the second metal line to the third metal line to form the one or more first conductor loops of the first conductor loop structure; and a plurality of second vias, each second via coupling the fourth metal line to the fifth metal line to form the one or more second conductor loops of the second conductor loop structure; and The plurality of third metallization layers include: a fourth metallization layer, the fourth metallization layer being adjacent to the first metallization layer and comprising a sixth metal line and an eighth metal line parallel to the sixth metal line; a fifth metallization layer adjacent to the fourth metallization layer and comprising a seventh metal line parallel to the sixth metal line and a ninth metal line parallel to the seventh metal line; a plurality of third vias, each third via coupling the sixth metal line to the eighth metal line to form the one or more third conductor loops of the third conductor loop structure; and A plurality of fourth vias are provided, each fourth via coupling the seventh metal line to the ninth metal line to form the one or more fourth conductor loops of the fourth conductor loop structure. The substrate of claim 1 , wherein the second RF transmit line is parallel to the first RF transmit line.

12. The substrate according to claim 1, wherein: The plurality of second metallization layers further includes a first ground plane; the first conductor loop structure being coupled to the first ground plane; The plurality of third metallization layers further includes a second ground plane; and The second conductor loop structure is coupled to the second ground plane.

13. The substrate of claim 12, further comprising one or more metal interconnects coupling the first ground plane to the second ground plane. 14 . The substrate of claim 1 , wherein the first RF transmit line and the second RF transmit line are disposed in the first metallization layer at a first pitch less than or equal to 100 micrometers (μm).

15. The substrate of claim 1 , integrated into a device selected from the group consisting of: a set-top box; an entertainment unit; a navigation device; a communication device; a fixed location data unit; a mobile location data unit; a global positioning system (GPS) device; a mobile phone; a cellular phone; a smartphone; a Session Initiation Protocol (3iP) phone; a tablet computer; Tablets; servers; computers; portable computers; mobile computing devices; wearable computing devices; desktop computers; personal digital assistants (PDAs); monitors; computer monitors; televisions; tuners; radios; satellite radios; music players; Digital music players; portable music players; digital video players; video players; digital video disc (DVD) players; portable digital video players; automobiles; vehicle components; avionics systems; drones; and multirotors.

16. A method for manufacturing a substrate, the method comprising: forming a first metallization layer in a first plane; forming a first radio frequency (RF) transmission line in the first metallization layer extending in a first direction in the first plane; forming a second RF transmit line adjacent to the first RF transmit line in the first metallization layer; forming a plurality of second metallization layers parallel to the first metallization layer; forming a first conductor loop structure adjacent to the first RF transmission line and the second RF transmission line in the plurality of second metallization layers, the first conductor loop structure comprising one or more first conductor loops, each first conductor loop being located in a second plane orthogonal to the first plane; forming a plurality of third metallization layers parallel to the first metallization layer, wherein the first metallization layer is located between the plurality of second metallization layers and the plurality of third metallization layers in a second direction orthogonal to the first plane; as well as A second conductor loop structure is formed in the plurality of third metallization layers adjacent to the first RF transmission line and the second RF transmission line, the second conductor loop structure including one or more second conductor loops, each second conductor loop being located in a third plane orthogonal to the first plane.

17. The method according to claim 16, wherein: forming the first conductor loop structure further comprises forming the first conductor loop structure orthogonal to the first plane of the first metallization layer; and Forming the first conductor loop structure further includes forming the second conductor loop structure orthogonal to the first plane of the first metallization layer.

18. The method of claim 16, wherein forming the first conductor loop structure further comprises aligning each of the second planes of the one or more first conductor loops with a corresponding third plane of the one or more second conductor loops in the second direction.

19. The method of claim 16, wherein: forming the plurality of second metallization layers further comprises forming the plurality of second metallization layers adjacent to the first metallization layer; and Forming the plurality of third metallization layers further includes forming the plurality of third metallization layers adjacent to the first metallization layer.

20. The method of claim 16, wherein: Forming the plurality of second metallization layers comprises: forming a second metallization layer adjacent to the first metallization layer and including a second metal line; forming a third metallization layer adjacent to the second metallization layer and including a third metal line parallel to the second metal line; and forming a plurality of first vias, each first via coupling the second metal line to the third metal line to form the one or more first conductor loops of the first conductor loop structure; and Forming the plurality of third metallization layers comprises: forming a fourth metallization layer adjacent to the first metallization layer and including a fourth metal line; forming a fifth metallization layer adjacent to the fourth metallization layer and including a fifth metal line parallel to the fourth metal line; and A plurality of second vias are formed, each second via coupling the fourth metal line to the fifth metal line to form the one or more second conductor loops of the second conductor loop structure.

21. The method of claim 16, wherein: Forming the first metallization layer further includes: forming a third RF transmission line; and forming a fourth RF transmission line adjacent to the third RF transmission line; Forming the plurality of second metallization layers further comprises: forming a third conductor loop structure adjacent to the third RF transmission line and the fourth RF transmission line, the third conductor loop structure comprising one or more third conductor loops, each third conductor loop being located in a fourth plane orthogonal to the first plane; and Forming the plurality of third metallization layers further comprises: A fourth conductor loop structure is formed adjacent to the third RF transmission line and the fourth RF transmission line, the fourth conductor loop structure including one or more fourth conductor loops, each fourth conductor loop being located in a fifth plane orthogonal to the first plane.

22. The method of claim 21, wherein: forming the first conductor loop structure further comprises aligning each of the second planes of the one or more first conductor loops with the third plane of the one or more second conductor loops in the second direction; and forming the third conductor loop structure further comprises aligning each of the fourth planes of the one or more third conductor loops with the fifth plane of the one or more fourth conductor loops in the second direction; in: The first conductor loop structure is laterally offset from the third conductor loop structure in the first direction; and The second conductor loop structure is laterally offset from the fourth conductor loop structure in the first direction.

23. An antenna module, comprising: A substrate, comprising: an antenna substrate including one or more antennas; and a packaging substrate coupled to the antenna substrate; and an integrated circuit (IC) die layer comprising a first die including a plurality of first die interconnects coupled to the package substrate; The substrate comprises: A first metallization layer, the first metallization layer being located in a first plane and comprising: a first radio frequency (RF) transmission line extending in a first direction in the first plane, the first RF transmission line coupled to a first antenna of the one or more antennas; and a second RF transmission line, the second RF transmission line being adjacent to the first RF transmission line, the second RF transmission line being coupled to a second antenna of the one or more antennas; a plurality of second metallization layers, the plurality of second metallization layers being parallel to the first metallization layer and comprising: a first conductor loop structure, the first conductor loop structure being adjacent to the first RF transmission line and the second RF transmission line, the first conductor loop structure comprising one or more first conductor loops, each first conductor loop being located in a second plane orthogonal to the first plane; and a plurality of third metallization layers, the plurality of third metallization layers being parallel to the first metallization layer, wherein the first metallization layer is located between the plurality of second metallization layers and the plurality of third metallization layers in a second direction orthogonal to the first plane; The plurality of third metallization layers include: a second conductor loop structure adjacent to the first RF transmit line and the second RF transmit line, the second conductor loop structure comprising one or more second conductors; and The plurality of first die interconnects are coupled to the first RF transmit line and the second RF transmit line.

24. The antenna module according to claim 23, wherein the first RF transmission line is configured to generate a magnetic flux in the one or more first conductor loops and the one or more second conductor loops in response to an RF signal in the first RF transmission line to induce eddy currents in the one or more first conductor loops and the one or more second conductor loops, the eddy currents causing a magnetic damping force in the magnetic flux.

25. The antenna module of claim 23, wherein: The plurality of second metallization layers include: a second metallization layer adjacent to the first metallization layer and comprising a second metal line; a third metallization layer adjacent to the second metallization layer and comprising third metal lines parallel to the second metal lines; and a plurality of first vias, each first via coupling the second metal line to the third metal line to form the one or more first conductor loops of the first conductor loop structure; and The plurality of third metallization layers include: a fourth metallization layer, the fourth metallization layer being adjacent to the first metallization layer and comprising a fourth metal line; a fifth metallization layer adjacent to the fourth metallization layer and comprising a fifth metal line parallel to the fourth metal line; and A plurality of second vias, each second via coupling the fourth metal line to the fifth metal line to form the one or more second conductor loops of the second conductor loop structure.

26. The antenna module according to claim 25, wherein: The second metallization layer is located between the first metallization layer and the third metallization layer in the second direction; and The fourth metallization layer is located between the first metallization layer and the fifth metallization layer in the second direction.

27. The antenna module of claim 23, wherein: The plurality of second metallization layers further includes a first ground plane; the first conductor loop structure being coupled to the first ground plane; The plurality of third metallization layers further includes a second ground plane; and The second conductor loop structure is coupled to the second ground plane.

28. The antenna module of claim 23, wherein the antenna module is integrated into a device selected from the group consisting of: a set-top box; an entertainment unit; a navigation device; a communication device; a fixed location data unit; a mobile location data unit; a global positioning system (GPS) device; a mobile phone; a cellular phone; a smartphone; a session initiation protocol (SiP) phone; a tablet computer; a phablet; a server; a computer; a portable computer; a mobile computing device; a wearable computing device; a desktop computer; a personal digital assistant (PDA); a monitor; a computer monitor; a television; a tuner; a radio; a satellite radio; a music player; a digital music player; a portable music player; a digital video player; a video player; a digital video disc (DVD) player; a portable digital video player; an automobile; a vehicle assembly; an avionics system; an unmanned aerial vehicle (UAV); and a multirotor aircraft.

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