A high-strength composite insulation material for cabinet-type instrument transformers and the cabinet-type instrument transformer.

Abstract

This invention discloses a high-strength composite insulation material for cabinet-type instrument transformers, comprising: CuAlZr deposited on an epoxy resin layer. a Gd b Layers, where a = 0.05–0.1, b = 0.03–0.06; in CuAlZr a Gd b CuAlFe deposited on the layer c La d Layers, where c = 0.1–0.15, d = 0.02–0.04; in CuAlFe c La d CuAlNi deposited on the layer e Ce f Layers, where e = 0.05–0.1, f = 0.04–0.08; in CuAlNi e La f CuAlCo ​​deposited on the layer g La h Layers, where g = 0.1–0.15, h = 0.02–0.04; and in CuAlCo g La h A polyetheretherketone (PEEK) layer is coated on top of the epoxy resin. This invention improves the bonding strength between the epoxy resin and PEEK, thereby increasing the strength of the epoxy resin.

Description

Technical Field

[0001] This invention relates to the field of layered materials technology, and in particular to a high-strength composite insulating material for cabinet-type instrument transformers and the cabinet-type instrument transformer itself. Background Technology

[0002] Epoxy resin is a commonly used insulating material in cabinet-type instrument transformers. Epoxy resin possesses excellent chemical resistance (resistance to acids, alkalis, and solvents), superior mechanical strength and dimensional stability, as well as good electrical insulation properties and low curing shrinkage. Currently, one way to improve the mechanical properties of epoxy resin is to coat it with a higher-strength polymer, using the higher-strength polymer as the primary load-bearing unit, thereby indirectly improving the overall mechanical properties of the component. Polyetheretherketone (PEEK) is an important high-strength thermoplastic polymer; however, studies have found that the interfacial bonding force between epoxy resin and PEEK is low. For example, in tensile tests, delamination often occurs between the epoxy resin and PEEK before the PEEK breaks, which severely affects the improvement of the mechanical properties of epoxy resin by PEEK. Summary of the Invention

[0003] To address the problems of existing technologies, this invention proposes a high-strength composite insulation material for cabinet-type instrument transformers. The insulation material proposed in this invention comprises multiple metal layers with specific doping elements. By designing the transition metal elements and rare earth elements included in each layer and the ratio of transition metal elements and rare earth elements in each layer, this invention improves the bonding force between epoxy resin and polyetheretherketone, thereby enhancing the strength of the epoxy resin.

[0004] This invention provides a high-strength composite insulation material for cabinet-type instrument transformers, comprising:

[0005] CuAlZr deposited on epoxy resin layer a Gd b Layer, where a = 0.05-0.1, b = 0.03-0.06;

[0006] In CuAlZr a Gd b CuAlFe deposited on the layer c La d Layer, where c = 0.1-0.15, d = 0.02-0.04;

[0007] In CuAlFe c La d CuAlNi deposited on the layer e Ce f Layer, where e = 0.05-0.1, f = 0.04-0.08;

[0008] In CuAlNi e Ce f CuAlCo ​​deposited on the layer g La h Layers, where g = 0.1–0.15, h = 0.02–0.04; and

[0009] In CuAlCo g La h A polyetheretherketone (PEEK) layer coated on top.

[0010] In one implementation, CuAlZr a Gd b The layer thickness is 30-40 nm, CuAlFe c La d The layer thickness is 30-40 nm, CuAlNi e Ce f The layer thickness is 30-40 nm, CuAlCo g La h The thickness of the layer is 30-40nm.

[0011] In one implementation, CuAlZr is deposited. a Gd b The specific process for the layer is as follows: CuAlZr is deposited using magnetron sputtering. a Gd b The layer, wherein the sputtering target is CuAlZr a Gd b The target material is supplied with an RF power supply, a sputtering power of 40-50W, a sputtering voltage of 30-40V, an argon flow rate of 20-30sccm, and a sputtering temperature of 80-100℃.

[0012] In one implementation, CuAlFe is deposited. c La d The specific process for the layer is as follows: CuAlFe is deposited using magnetron sputtering. c La d The layer, wherein the sputtering target is CuAlFe c La d The target material is supplied with an RF power supply, a sputtering power of 60-70W, a sputtering voltage of 30-40V, an argon flow rate of 20-30sccm, and a sputtering temperature of 80-100℃.

[0013] In one implementation, CuAlNi is deposited. e Ce f The specific process for the layer is as follows: CuAlNi is deposited using magnetron sputtering. e Ce fThe layer, wherein the sputtering target is CuAlNi e Ce f The target material is supplied with an RF power supply, a sputtering power of 40-50W, a sputtering voltage of 30-40V, an argon flow rate of 20-30sccm, and a sputtering temperature of 80-100℃.

[0014] In one implementation, CuAlCo ​​is deposited. g La h The specific process for the layer is as follows: CuAlCo ​​is deposited using magnetron sputtering. g La h The layer, wherein the sputtering target is CuAlCo g La h The target material is supplied with an RF power supply, a sputtering power of 60-70W, a sputtering voltage of 50-70V, an argon flow rate of 20-30sccm, and a sputtering temperature of 80-100℃.

[0015] This invention provides a cabinet-type current transformer, comprising:

[0016] High-strength composite insulation materials are used in cabinet-type instrument transformers. These high-strength composite insulation materials include:

[0017] CuAlZr deposited on epoxy resin layer a Gd b Layer, where a = 0.05-0.1, b = 0.03-0.06;

[0018] In CuAlZr a Gd b CuAlFe deposited on the layer c La d Layer, where c = 0.1-0.15, d = 0.02-0.04;

[0019] In CuAlFe c La d CuAlNi deposited on the layer e Ce f Layer, where e = 0.05-0.1, f = 0.04-0.08;

[0020] In CuAlNi e Ce f CuAlCo ​​deposited on the layer g La h Layers, where g = 0.1–0.15, h = 0.02–0.04; and

[0021] In CuAlCo g La h A polyetheretherketone (PEEK) layer coated on top.

[0022] In one implementation, CuAlZr a Gd b The layer thickness is 30-40 nm, CuAlFe c La d The layer thickness is 30-40 nm, CuAlNi e Ce f The layer thickness is 30-40 nm, CuAlCo g La h The thickness of the layer is 30-40nm.

[0023] In one implementation, CuAlZr is deposited. a Gd b The specific process for the layer is as follows: CuAlZr is deposited using magnetron sputtering. a Gd b The layer, wherein the sputtering target is CuAlZr a Gd b The target material is supplied with an RF power supply, a sputtering power of 40-50W, a sputtering voltage of 30-40V, an argon flow rate of 20-30sccm, and a sputtering temperature of 80-100℃.

[0024] In one implementation, CuAlFe is deposited. c La d The specific process for the layer is as follows: CuAlFe is deposited using magnetron sputtering. c La d The layer, wherein the sputtering target is CuAlFe c La d The target material is supplied with an RF power supply, a sputtering power of 60-70W, a sputtering voltage of 30-40V, an argon flow rate of 20-30sccm, and a sputtering temperature of 80-100℃.

[0025] Compared with the prior art, the present invention has the following advantages: the insulating material proposed in the present invention includes multiple metal layers with specific doping elements; the present invention improves the bonding force between epoxy resin and polyetheretherketone by designing the transition metal elements and rare earth elements included in each film layer and the ratio of transition metal elements and rare earth elements in each film layer, thereby improving the strength of epoxy resin. Attached Figure Description

[0026] Figure 1 This is a schematic diagram of the membrane structure according to an embodiment of the present invention.

[0027] Figure 2 This is a TEM photograph of an embodiment of the present invention.

[0028] Figure 3 This is an HRTEM photograph of an embodiment of the present invention. Detailed Implementation

[0029] The specific embodiments of the present invention will now be described in detail with reference to the accompanying drawings, but it should be understood that the scope of protection of the present invention is not limited to the specific embodiments.

[0030] Figure 1 This is a schematic diagram of the membrane structure according to an embodiment of the present invention. As shown in the figure, the high-strength composite insulating material for cabinet-type instrument transformers of the present invention sequentially includes an epoxy resin layer, a CuAlZr layer, and a Zr layer. a Gd b Layer, CuAlFe c La d Layer, CuAlNi e Ce f Layer, CuAlCo g La h The epoxy resin of the present invention comprises a layer and a polyether ether ketone layer. To ensure comparability of results, unless otherwise indicated, the epoxy resin of the present invention is the epoxy resin of Example 6 in prior art CN105255424B with components A and B in a 1:1 ratio.

[0031] Example 1

[0032] A high-strength composite insulation material for cabinet-type instrument transformers comprises: CuAlZr deposited on an epoxy resin layer. a Gd b Layer, where a=0.05, b=0.03; in CuAlZr a Gd b CuAlFe deposited on the layer c La d Layer, where c=0.1, d=0.02; in CuAlFe c La d CuAlNi deposited on the layer e Ce f Layer, where e=0.05, f=0.04; in CuAlNi e Ce f CuAlCo ​​deposited on the layer g La h Layer, where g=0.1, h=0.02; and in CuAlCo g La h A polyether ether ketone layer coated on top. Those skilled in the art will understand that, in this invention, for example, CuAlZr... a Gd b The layer indicates that the target material for depositing this layer is CuAlZr. a Gdb The target material is used, not to indicate that the actual composition of the layer is CuAlZr. a Gd b (It is understandable that the composition of any film generated by magnetron sputtering will slightly deviate from that of the target material.) In CuAlCo g La h One method for coating a polyetheretherketone (PEEK) layer onto a CuAlCo ​​layer is to uniformly coat molten PEEK resin onto the CuAlCo ​​layer. g La h The metal film layer is then formed by cooling and curing the polyetheretherketone (PEEK) resin. It is understood that the PEEK layer needs to completely cover the metal film layer. Since PEEK is an insulating material, even though the composite material of this invention contains a metal layer, the composite material of this invention can still maintain its insulating properties because the PEEK layer completely covers the metal film layer.

[0033] CuAlZr a Gd b The layer thickness is 30 nm, CuAlFe c La d The layer thickness is 30 nm, CuAlNi e Ce f The layer thickness is 30 nm, CuAlCo g La h The thickness of the layer is 30nm.

[0034] Deposition of CuAlZr a Gd b The specific process for the layer is as follows: CuAlZr is deposited using magnetron sputtering. a Gd b The layer, wherein the sputtering target is CuAlZr a Gd b The sputtering target, using an RF power supply, has a sputtering power of 40W, a sputtering voltage of 30V, an argon flow rate of 20sccm, and a sputtering temperature of 80℃. (CuAlZr) a Gd b The target material can be prepared using the vacuum melting method, which is well-known in the art. The general steps are as follows: first, the various metal elements are weighed and prepared according to a ratio; then, the metal raw materials are placed in a vacuum melting machine; finally, a metal ingot is obtained through vacuum testing; and finally, the metal ingot is machined to obtain the metal target material. All target materials used in this invention were purchased from Tianjin Hengyi New Materials Co., Ltd.

[0035] Deposition of CuAlFe c La d The specific process for the layer is as follows: CuAlFe is deposited using magnetron sputtering. c La dThe layer, wherein the sputtering target is CuAlFe c La d The target material is supplied with an RF power supply, a sputtering power of 60W, a sputtering voltage of 30V, an argon flow rate of 20sccm, and a sputtering temperature of 80℃.

[0036] Deposition of CuAlNi e Ce f The specific process for the layer is as follows: CuAlNi is deposited using magnetron sputtering. e Ce f The layer, wherein the sputtering target is CuAlNi e Ce f The target material is supplied with an RF power supply, a sputtering power of 40W, a sputtering voltage of 30V, an argon flow rate of 20sccm, and a sputtering temperature of 80℃.

[0037] Deposition of CuAlCo g La h The specific process for the layer is as follows: CuAlCo ​​is deposited using magnetron sputtering. g La h The layer, wherein the sputtering target is CuAlCo g La h The target material is supplied with an RF power supply, a sputtering power of 60W, a sputtering voltage of 50V, an argon flow rate of 20sccm, and a sputtering temperature of 80℃.

[0038] CuAlCo ​​of Example 1 g La h TEM images of the layers can be seen Figure 2 Example 1: CuAlCo g La h HRTEM images of the layers can be seen Figure 3 .

[0039] The specimens obtained in Example 1 were machined to obtain tensile strength specimens conforming to the ISO 527-2:2025 test standard. A total of five specimens were prepared. Tensile strength testing was performed according to the ISO 527-2:2025 test standard. The average tensile strength of the five specimens was 105 MPa, and none of the five specimens showed delamination after breaking. The mechanism leading to this experimental result may be as follows: [Regarding CuAlZr...] a Gd b Layer (epoxy resin interface layer), the unfilled d orbitals of Zr (4d²) interact with the lone pair electrons (2p) of oxygen atoms in the epoxy resin. 4 ) forms dp orbital hybridization, enhancing charge transfer; at the same time, Gd(4f 7 5d 1The f orbitals of Gd act as electron traps, capturing free electrons at the interface and reducing the interfacial barrier, thus increasing the binding energy. The addition of Gd reduces the surface energy of the metal layer from 1.8 J / m² for pure Cu to 1.25 J / m², approaching that of epoxy resin (0.045 J / m²), significantly improving wettability. Gd forms Gd-OC coordination bonds with the hydroxyl groups (-OH) of epoxy resin (bond energy ≈ 318 kJ / mol), far exceeding van der Waals forces (<50 kJ / mol). For CuAlFe... c La d Layer, Fe (CTE=12.0×10⁻⁶) -6 / K) and La (CTE=12.1×10 -6 The addition of / K) kept the CTE of this layer at 12.5 × 10⁻⁶. -6 / K, with precision between the lower layers (CuAlZrGd: 14.2×10). -6 / K) and the upper layer (CuAlNiCe: 10.8×10) -6 Between / K), the stress decreases by 70% under 200℃ thermal cycling. The bcc structure of Fe (lattice constant 2.87 Å) forms a Kurdjumov-Sachs orientation relationship with the adjacent fcc layer, enhancing the interlayer bonding strength. The 3d electrons of Fe and the 5d electrons of La form a hybrid density peak near the Fermi level, enhancing interlayer electron sharing. For CuAlNi... e Ce f Layer Ni (3d 8 As a Lewis acid active site, it attacks the oxygen atom of the PEEK carbonyl group (C=O), while Ce... 3+ / Ce 4+ The variable valence state provides an electron transfer channel, catalyzing the formation of CO-Ni (bond energy ≈280 kJ / mol) and Ce-OC (bond energy ≈340 kJ / mol) covalent bonds. The Ni fcc lattice (a=3.52 Å) forms a 2:3 superlattice relationship with the PEEK benzene ring interplanar spacing (5.0±0.2 Å) (mismatch 4.8%), with an interfacial energy as low as 0.8 J / m². This is relevant for CuAlCo... g La h Layer (PEEK contact layer), Co 3d 7 sp of electrons with PEEK ether bonds (-O-) 3 Hybrid orbitals form d-pπ conjugated bonds (bond energy ≈ 210 kJ / mol), which are 5 times stronger than hydrogen bonds. La promotes the preferential growth of the (111) crystal plane (interplanar spacing 2.08 Å), which couples with the (010) crystal plane of PEEK (interplanar spacing 2.02 Å) through the Moiré superlattice, with a mismatch strain < 1.5%.

[0040] Example 2

[0041] A high-strength composite insulation material for cabinet-type instrument transformers comprises: CuAlZr deposited on an epoxy resin layer. a Gd b Layer, where a=0.1, b=0.06; in CuAlZr a Gd b CuAlFe deposited on the layer c La d Layer, where c=0.15, d=0.04; in CuAlFe c La d CuAlNi deposited on the layer e Ce f Layer, where e=0.1, f=0.08; in CuAlNi e Ce f CuAlCo ​​deposited on the layer g La h Layer, where g=0.15, h=0.04; and in CuAlCo g La h A polyetheretherketone (PEEK) layer coated with a layer.

[0042] CuAlZr a Gd b The layer thickness is 40 nm, CuAlFe c La d The layer thickness is 40 nm, CuAlNi e Ce f The layer thickness is 40 nm, CuAlCo g La h The thickness of the layer is 40nm.

[0043] Deposition of CuAlZr a Gd b The specific process for the layer is as follows: CuAlZr is deposited using magnetron sputtering. a Gd b The layer, wherein the sputtering target is CuAlZr a Gd b The target material is supplied with an RF power supply, a sputtering power of 50W, a sputtering voltage of 40V, an argon flow rate of 30sccm, and a sputtering temperature of 100℃.

[0044] Deposition of CuAlFe c La d The specific process for the layer is as follows: CuAlFe is deposited using magnetron sputtering. c La d The layer, wherein the sputtering target is CuAlFe c La dThe target material is supplied with an RF power supply, a sputtering power of 70W, a sputtering voltage of 40V, an argon flow rate of 30sccm, and a sputtering temperature of 100℃.

[0045] Deposition of CuAlNi e Ce f The specific process for the layer is as follows: CuAlNi is deposited using magnetron sputtering. e Ce f The layer, wherein the sputtering target is CuAlNi e Ce f The target material is supplied with an RF power supply, a sputtering power of 50W, a sputtering voltage of 40V, an argon flow rate of 30sccm, and a sputtering temperature of 100℃.

[0046] Deposition of CuAlCo g La h The specific process for the layer is as follows: CuAlCo ​​is deposited using magnetron sputtering. g La h The layer, wherein the sputtering target is CuAlCo g La h The target material is supplied with an RF power supply, a sputtering power of 70W, a sputtering voltage of 70V, an argon flow rate of 30sccm, and a sputtering temperature of 100℃.

[0047] The specimens obtained in Example 2 were machined to obtain tensile strength specimens conforming to the ISO 527-2:2025 test standard. A total of 5 specimens were prepared. The tensile strength test was conducted according to the ISO 527-2:2025 test standard. The average tensile strength of the 5 specimens was 109 MPa, and no delamination was observed in any of the 5 specimens after they were broken.

[0048] Example 3

[0049] A high-strength composite insulation material for cabinet-type instrument transformers comprises: CuAlZr deposited on an epoxy resin layer. a Gd b Layer, where a=0.07, b=0.05; in CuAlZr a Gd b CuAlFe deposited on the layer c La d Layer, where c=0.12, d=0.03; in CuAlFe c La d CuAlNi deposited on the layer e Ce f Layer, where e=0.07, f=0.06; in CuAlNi e Ce f CuAlCo ​​deposited on the layerg La h Layer, where g=0.12, h=0.03; and in CuAlCo g La h A polyetheretherketone (PEEK) layer coated with a layer.

[0050] CuAlZr a Gd b The layer thickness is 35 nm, CuAlFe c La d The layer thickness is 35 nm, CuAlNi e Ce f The layer thickness is 35 nm, CuAlCo g La h The thickness of the layer is 35nm.

[0051] Deposition of CuAlZr a Gd b The specific process for the layer is as follows: CuAlZr is deposited using magnetron sputtering. a Gd b The layer, wherein the sputtering target is CuAlZr a Gd b The target material is supplied with an RF power supply, a sputtering power of 45W, a sputtering voltage of 35V, an argon flow rate of 20sccm, and a sputtering temperature of 90℃.

[0052] Deposition of CuAlFe c La d The specific process for the layer is as follows: CuAlFe is deposited using magnetron sputtering. c La d The layer, wherein the sputtering target is CuAlFe c La d The target material is supplied with an RF power supply, a sputtering power of 65W, a sputtering voltage of 35V, an argon flow rate of 20sccm, and a sputtering temperature of 90℃.

[0053] Deposition of CuAlNi e Ce f The specific process for the layer is as follows: CuAlNi is deposited using magnetron sputtering. e Ce f The layer, wherein the sputtering target is CuAlNi e Ce f The target material is supplied with an RF power supply, a sputtering power of 45W, a sputtering voltage of 35V, an argon flow rate of 20sccm, and a sputtering temperature of 90℃.

[0054] Deposition of CuAlCo g La hThe specific process for the layer is as follows: CuAlCo ​​is deposited using magnetron sputtering. g La h The layer, wherein the sputtering target is CuAlCo g La h The target material is supplied with an RF power supply, a sputtering power of 65W, a sputtering voltage of 60V, an argon flow rate of 20sccm, and a sputtering temperature of 90℃.

[0055] The specimens obtained in Example 3 were machined to obtain tensile strength specimens conforming to the ISO 527-2:2025 test standard. A total of 5 specimens were prepared. The tensile strength test was conducted according to the ISO 527-2:2025 test standard. The average tensile strength of the 5 specimens was 107 MPa, and no delamination was observed in any of the 5 specimens after they were broken.

[0056] Comparative Example 1

[0057] A polyetheretherketone (PEEK) layer was directly coated onto the epoxy resin layer. The specimens obtained in Comparative Example 1 were machined to obtain tensile strength test specimens conforming to the ISO 527-2:2025 test standard. A total of five specimens were prepared. Tensile strength testing was performed according to the ISO 527-2:2025 test standard. The average tensile strength of the five specimens was 50 MPa. Delamination occurred in all five specimens before the PEEK was broken.

[0058] Comparative Example 2

[0059] CuAlZr deposited on epoxy resin layer a Gd b Layer, where a=0.05, b=0.03; in CuAlZr a Gd b CuAlFe deposited on the layer c La d Layer, where c=0.1, d=0.02; subsequently in CuAlFe c La d A polyetheretherketone (PEEK) layer was coated on top. The remaining parameters and processes were the same as in Example 1. The specimens obtained in Comparative Example 2 were machined to obtain tensile strength specimens conforming to the ISO 527-2:2025 test standard. A total of five specimens were prepared. The tensile strength test was conducted according to the ISO 527-2:2025 test standard. The average tensile strength of the five specimens was 80 MPa. Three of the five specimens showed delamination before the PEEK was broken.

[0060] Comparative Example 3

[0061] CuAlZr deposited on epoxy resin layer a Gd bLayer, where a=0.2, b=0.2; in CuAlZr a Gd b CuAlFe deposited on the layer c La d Layer, where c=0.2, d=0.2; in CuAlFe c La d CuAlNi deposited on the layer e Ce f Layer, where e=0.2, f=0.2; in CuAlNi e Ce f CuAlCo ​​deposited on the layer g La h Layer, where g=0.2, h=0.2; and in CuAlCo g La h A polyetheretherketone (PEEK) layer was coated on top. Remaining parameters and processes were the same as in Example 1. The sample obtained in Comparative Example 3 was machined to obtain tensile strength test specimens conforming to the ISO 527-2:2025 test standard. A total of five specimens were prepared. Tensile strength testing was performed according to the ISO 527-2:2025 test standard. The average tensile strength of the five specimens was 73 MPa. Three of the five specimens showed delamination before the PEEK was broken.

[0062] Comparative Example 4

[0063] CuAlZr a Gd b The layer thickness is 80 nm, CuAlFe c La d The layer thickness is 80 nm, CuAlNi e Ce f The layer thickness is 80 nm, CuAlCo g La h The layer thickness was 80 nm. The sample obtained in Comparative Example 4 was machined to obtain tensile strength test specimens conforming to the ISO 527-2:2025 test standard. A total of 5 specimens were prepared. Tensile strength testing was performed according to the ISO 527-2:2025 test standard. The average tensile strength of the 5 specimens was 90 MPa. Two of the 5 specimens showed delamination before the polyetheretherketone was broken.

[0064] Comparative Example 5

[0065] Deposition of CuAlZr a Gd b The specific process for the layer is as follows: CuAlZr is deposited using magnetron sputtering. a Gd b The layer, wherein the sputtering target is CuAlZra Gd b The target material is supplied with an RF power supply, a sputtering power of 100W, a sputtering voltage of 100V, an argon flow rate of 20sccm, and a sputtering temperature of 90℃.

[0066] Deposition of CuAlFe c La d The specific process for the layer is as follows: CuAlFe is deposited using magnetron sputtering. c La d The layer, wherein the sputtering target is CuAlFe c La d The sputtering target was prepared using an RF power supply with a sputtering power of 100W, a sputtering voltage of 100V, an argon flow rate of 20 sccm, and a sputtering temperature of 90℃. The metal film in Comparative Example 5 exhibited visible cracks and was not subjected to tensile testing.

[0067] It should be understood that the specific embodiments described above are merely illustrative or explanatory of the principles of the invention and do not constitute a limitation thereof. Therefore, any modifications, equivalent substitutions, improvements, etc., made without departing from the spirit and scope of the invention should be included within the protection scope of the invention. Furthermore, the appended claims are intended to cover all variations and modifications falling within the scope and boundaries of the appended claims, or equivalent forms of such scope and boundaries.

Claims

1. A high-strength composite insulation material for cabinet-type instrument transformers, comprising: CuAlZr deposited on epoxy resin layer a Gd b Layer, where a = 0.05-0.1, b = 0.03-0.06; In the CuAlZr a Gd b CuAlFe deposited on the layer c La d Layer, where c = 0.1-0.15, d = 0.02-0.04; In the CuAlFe c La d CuAlNi deposited on the layer e Ce f Layer, where e = 0.05-0.1, f = 0.04-0.08; In the CuAlNi e Ce f CuAlCo ​​deposited on the layer g La h Layers, where g = 0.1–0.15, h = 0.02–0.04; and In the CuAlCo g La h The polyetheretherketone layer coated on the top layer, The CuAlZr a Gd b The thickness of the layer is 30-40 nm, and the CuAlFe c La d The thickness of the layer is 30-40 nm, and the CuAlNi e Ce f The thickness of the layer is 30-40 nm, and the CuAlCo g La h The thickness of the layer is 30-40nm.

2. The high-strength composite insulating material according to claim 1, wherein, The deposited CuAlZr a Gd b The specific process for the layer is as follows: CuAlZr is deposited using magnetron sputtering. a Gd b The layer, wherein the sputtering target is CuAlZr a Gd b The target material is supplied with an RF power supply, a sputtering power of 40-50W, a sputtering voltage of 30-40V, an argon flow rate of 20-30sccm, and a sputtering temperature of 80-100℃.

3. The high-strength composite insulating material according to claim 1, wherein, The deposited CuAlFe c La d The specific process for the layer is as follows: CuAlFe is deposited using magnetron sputtering. c La d The layer, wherein the sputtering target is CuAlFe c La d The target material is supplied with an RF power supply, a sputtering power of 60-70W, a sputtering voltage of 30-40V, an argon flow rate of 20-30sccm, and a sputtering temperature of 80-100℃.

4. The high-strength composite insulating material according to claim 1, wherein, The CuAlNi deposited e Ce f The specific process for the layer is as follows: CuAlNi is deposited using magnetron sputtering. e Ce f The layer, wherein the sputtering target is CuAlNi e Ce f The target material is supplied with an RF power supply, a sputtering power of 40-50W, a sputtering voltage of 30-40V, an argon flow rate of 20-30sccm, and a sputtering temperature of 80-100℃.

5. The high-strength composite insulating material according to claim 1, wherein, The CuAlCo ​​deposit g La h The specific process for the layer is as follows: CuAlCo ​​is deposited using magnetron sputtering. g La h The layer, wherein the sputtering target is CuAlCo g La h The target material is supplied with an RF power supply, a sputtering power of 60-70W, a sputtering voltage of 50-70V, an argon flow rate of 20-30sccm, and a sputtering temperature of 80-100℃.

6. A cabinet-type instrument transformer, comprising: High-strength composite insulation material for cabinet-type instrument transformers, the high-strength composite insulation material comprising: CuAlZr deposited on epoxy resin layer a Gd b Layer, where a = 0.05-0.1, b = 0.03-0.06; In the CuAlZr a Gd b CuAlFe deposited on the layer c La d Layer, where c = 0.1-0.15, d = 0.02-0.04; In the CuAlFe c La d CuAlNi deposited on the layer e Ce f Layer, where e = 0.05-0.1, f = 0.04-0.08; In the CuAlNi e Ce f CuAlCo ​​deposited on the layer g La h Layers, where g = 0.1–0.15, h = 0.02–0.04; and In the CuAlCo g La h The polyetheretherketone layer coated on the top layer, The CuAlZr a Gd b The thickness of the layer is 30-40 nm, and the CuAlFe c La d The thickness of the layer is 30-40 nm, and the CuAlNi e Ce f The thickness of the layer is 30-40 nm, and the CuAlCo g La h The thickness of the layer is 30-40nm.

7. The cabinet-type instrument transformer according to claim 6, wherein, The CuAlZr deposited a Gd b The specific process for the layer is as follows: CuAlZr is deposited using magnetron sputtering. a Gd b The layer, wherein the sputtering target is CuAlZr a Gd b The target material is supplied with an RF power supply, a sputtering power of 40-50W, a sputtering voltage of 30-40V, an argon flow rate of 20-30sccm, and a sputtering temperature of 80-100℃.

8. The cabinet-type instrument transformer according to claim 6, wherein, The deposited CuAlFe c La d The specific process for the layer is as follows: CuAlFe is deposited using magnetron sputtering. c La d The layer, wherein the sputtering target is CuAlFe c La d The target material is supplied with an RF power supply, a sputtering power of 60-70W, a sputtering voltage of 30-40V, an argon flow rate of 20-30sccm, and a sputtering temperature of 80-100℃.

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