Control method of wafer detection equipment, wafer detection method and wafer detection equipment

Abstract

The invention discloses a control method of wafer detection equipment, a wafer detection method and the wafer detection equipment, and belongs to the technical field of detection. The method comprises the following steps: determining a target detection mode of wafer detection equipment, namely taking one of a plurality of seed detection modes as the target detection mode, or taking a combination formed by at least two of the plurality of seed detection modes according to a preset execution sequence as the target detection mode, the plurality of sub-detection modes comprise at least two sub-detection modes in a plurality of preset sub-detection modes and / or user-defined sub-detection modes; acquiring a corresponding target operation based on the target detection mode; and controlling the wafer detection equipment to carry out posture adjustment and imaging on the wafer according to the target operation corresponding to the target detection mode. According to the method and the device, the mode of macroscopic detection on the wafer can be selected according to actual requirements, or macroscopic detection is carried out on the wafer through self-defined operation independently set by a user, so that the flexibility during wafer detection is improved.

Description

Technical Field

[0001] The present application relates to the field of detection technology, and in particular to a control method for wafer detection equipment, a wafer detection method, and wafer detection equipment. Background Art

[0002] Wafer inspection technology can be divided into macro inspection and micro inspection based on the inspection scale. Among them, wafer macro inspection is an automatic optical inspection technology based on optical principles, including macro bright field optical inspection and macro dark field optical inspection. Optical imaging of the wafer under inspection is performed through the cooperation of optical components such as optical lenses, cameras, light sources, and motion platforms. Wafer macro inspection is often used to detect defects such as dust particles, scratches, dirt, chipped edges, bubbles, etc. on the surfaces of non-patterned wafers and patterned wafers, and plays a very important role in controlling wafer production yield. However, existing wafer macro inspection equipment cannot stably ensure that both the human eye and the camera can accurately identify various defects on the wafer surface through imaging within the technical scope of macro optical inspection, and some equipment is subject to a relatively fixed optical imaging system, that is, the imaging position and angle of the optical imaging system cannot accurately capture defects. Therefore, it cannot meet the needs of macro inspection of wafers. Summary of the Invention

[0003] In response to the problems existing in the prior art, this application provides a control method for wafer inspection equipment, a wafer inspection method, and a wafer inspection equipment. These methods can select a macroscopic inspection method for wafers based on actual needs, or perform macroscopic inspection on wafers through user-defined operations, thereby improving the flexibility of wafer inspection and providing a highly flexible wafer inspection equipment that can meet corresponding measurement requirements. The technical solution is as follows: In one aspect, a control method for a wafer inspection device is provided, the control method comprising: Determining a target detection mode of the wafer detection device includes: using one sub-detection mode from a plurality of sub-detection modes as the target detection mode, or using a combination of at least two sub-detection modes from the plurality of sub-detection modes in a predetermined execution order as the target detection mode; the plurality of sub-detection modes include at least two sub-detection modes from a plurality of preset sub-detection modes and / or custom sub-detection modes; each preset sub-detection mode from the plurality of preset sub-detection modes is used to perform macroscopic inspection on the wafer through a corresponding operation, and the custom sub-detection mode is used to perform macroscopic inspection on the wafer through a custom operation set by a user; Acquire a corresponding target operation based on the target detection mode; The wafer detection device is controlled to perform posture adjustment and imaging on the wafer according to the target operation corresponding to the target detection mode, so as to obtain at least one image to be tested.

[0004] Optionally, if the target detection mode includes a preset sub-detection mode for performing a first type of operation, controlling the wafer detection device to perform posture adjustment and imaging on the wafer according to the target operation corresponding to the target detection mode to obtain at least one image to be tested includes: Controlling the multi-axis translation stage carrying the wafer to move so that the first surface of the wafer is in a first set posture; Controlling a brightfield light source to turn on so that the brightfield illumination light covers the first surface of the wafer, and controlling an image sensor to perform brightfield imaging on the first surface of the wafer to obtain a corresponding brightfield image to be measured; Controlling the bright field light source to be turned off while turning on the dark field light source so that the dark field illumination light covers the first surface of the wafer, and controlling the image sensor to perform dark field imaging on the first surface of the wafer to obtain a corresponding dark field image to be measured; Controlling the multi-axis translation stage carrying the wafer to move so that the second surface of the wafer is in a first set posture, and controlling the image sensor to perform dark field imaging on the second surface of the wafer to obtain a corresponding dark field image to be measured; Controlling the dark field light source to be turned off while turning on the bright field light source, and controlling the image sensor to perform bright field imaging on the second surface of the wafer to obtain a corresponding bright field image to be measured; Wherein, the first surface and the second surface of the wafer are arranged opposite to each other.

[0005] Optionally, if the target detection mode includes a preset sub-detection mode for performing a second type of operation, controlling the wafer detection device to perform posture adjustment and imaging on the wafer according to the target operation corresponding to the target detection mode to obtain at least one image to be tested includes: Controlling the multi-axis translation stage carrying the wafer to move so that the first surface of the wafer is in a first set posture; Controlling a brightfield light source to turn on, and sequentially switching a plurality of colors of brightfield illumination light to cover the first surface of the wafer, and controlling an image sensor to perform brightfield imaging on the first surface of the wafer under each color of brightfield illumination light, so as to obtain brightfield images to be measured of the first surface of the wafer corresponding to the plurality of colors of brightfield illumination light respectively; The multi-axis translation stage carrying the wafer is controlled to move so that the second surface of the wafer is in a first set posture, the bright field light source is controlled to sequentially switch a plurality of colors of bright field illumination light to cover the second surface of the wafer, and the image sensor is controlled to perform bright field imaging on the second surface of the wafer under each color of bright field illumination light to obtain bright field test images of the second surface of the wafer corresponding to the plurality of colors of bright field illumination light.

[0006] Optionally, if the target detection mode includes a preset sub-detection mode for performing a third type of operation, controlling the wafer detection device to perform posture adjustment and imaging on the wafer according to the target operation corresponding to the target detection mode to obtain at least one image to be tested includes: Controlling a multi-axis translation stage carrying the wafer to move so that the first surface of the wafer is in a first set posture, and controlling a brightfield light source to turn on so that the brightfield illumination light covers the first surface of the wafer; Controlling the multi-axis translation stage carrying the wafer to move so that the first surface of the wafer is in a plurality of different postures, so that a user can observe the first surface of the wafer from a plurality of different angles; and controlling the image sensor to perform bright field imaging on the first surface of the wafer in each posture, to obtain bright field images to be measured corresponding to the first surface of the wafer in the plurality of different postures; Controlling the bright field light source to be turned off while turning on the dark field light source, and controlling the multi-axis translation stage carrying the wafer to move so that the second surface of the wafer is in a first set posture and the dark field illumination light covers the second surface of the wafer; The multi-axis translation stage carrying the wafer is controlled to move so that the second surface of the wafer is in multiple different postures, so that the user can observe the second surface of the wafer at multiple different angles; and the image sensor is controlled to perform dark field imaging on the second surface of the wafer in each posture, so as to obtain dark field test images corresponding to the second surface of the wafer in multiple different postures.

[0007] Optionally, the control method further includes: In response to a click operation or a trigger signal, determining a target posture, where the target posture is used to indicate a posture that the first surface of the wafer or the second surface of the wafer needs to be in; controlling the multi-axis translation stage carrying the wafer to move so that the first surface or the second surface of the wafer is in the target posture, so that the user can observe the first surface or the second surface of the wafer; Under the target posture, the image sensor is controlled to perform bright field imaging on the first surface of the wafer or to perform dark field imaging on the second surface of the wafer.

[0008] Optionally, if the target detection mode includes the custom sub-detection mode for performing a custom operation, before determining the target detection mode of the wafer detection device, the method further includes: In response to a setting operation of a user, determining a custom operation corresponding to a custom sub-inspection mode of the wafer inspection device; The controlling the wafer detection device to perform posture adjustment and imaging on the wafer according to the target operation corresponding to the target detection mode to obtain at least one image to be tested includes: Control the bright field light source, dark field light source, and multi-axis translation stage carrying the wafer of the wafer detection equipment to operate according to the custom operation corresponding to the custom sub-detection mode, and control the image sensor to perform corresponding imaging on the first surface of the wafer or the second surface of the wafer to obtain at least one image to be tested.

[0009] Optionally, determining a target detection mode of the wafer detection equipment includes: In response to a user's selection operation, one sub-detection mode is selected from the plurality of sub-detection modes, or a combination of at least two of the plurality of sub-detection modes in a predetermined execution order is selected as the target detection mode.

[0010] Optionally, controlling the wafer inspection device to perform posture adjustment and imaging on the wafer according to the target operation corresponding to the target detection mode to obtain at least one image to be tested further includes: The target detection mode includes one or more sub-detection modes. When executing any one of the sub-detection modes included in the target detection mode, the execution starts from the initial state of the wafer detection equipment, and after the current sub-detection mode is executed, the wafer detection equipment is controlled to return to the initial state.

[0011] In another aspect, a wafer inspection method is provided, the method comprising: Acquire at least one image to be tested according to the control method of the wafer inspection device described above; The wafer is inspected based on at least one image to be inspected.

[0012] On the other hand, a high-degree-of-freedom wafer inspection device is provided, the wafer inspection device comprising: A multi-axis translation stage includes a carrying module, a driving module, a turntable module, and an angle adjustment module. The carrying module is used to carry a wafer. The driving module includes a first driving submodule, a second driving submodule, a third driving submodule, and a fourth driving submodule. The turntable module includes a first turntable and a second turntable. The first driving submodule is used to drive the first turntable to move around a first axis. The second driving submodule is used to drive the angle adjustment module to move around a second axis. The third driving submodule is used to drive the second turntable to move around a third axis. The fourth driving submodule is used to drive the carrying module to move around a fourth axis. The first axis, the second axis, the third axis, and the fourth axis are all different. An imaging optical path component, comprising an image sensor and an optical lens; the imaging optical path component is used to perform optical imaging of the wafer carried by the carrying module through the optical lens, and transmit the optical signal obtained by imaging to the image sensor, and the image sensor is used to convert the optical signal into an electrical signal; A bright field light source assembly, used for emitting a bright field light source for illumination during bright field imaging; A dark field light source assembly, comprising at least two dark field light source modules located in different directions, for emitting dark field light sources for illumination during dark field imaging; A driving assembly, used for driving the multi-axis translation stage and the optical lens to move relative to each other; A processor is configured to execute the method described in any one of the embodiments herein.

[0013] Optionally, if the target detection mode includes a preset sub-detection mode for performing the first type of operation, the processor controlling the wafer detection device to perform posture adjustment and imaging on the wafer according to the target operation includes: Controlling the first driving submodule to drive the first turntable to move around the first axis, and controlling the fourth driving submodule to drive the carrying module to move around the fourth axis, so as to move the carrying module to a first position and place the first surface of the wafer carried by the carrying module in a first set posture; Controlling the brightfield light source assembly to turn on so that the brightfield illumination light covers the first surface of the wafer, and controlling the imaging optical path assembly to perform brightfield imaging on the first area to obtain a corresponding brightfield image to be measured; Controlling the bright field light source assembly to be turned off while turning on the dark field light source assembly so that the dark field illumination light covers the first surface of the wafer, and controlling the imaging optical path assembly to perform dark field imaging on the first surface of the wafer to obtain a corresponding dark field image to be measured; controlling the fourth driving submodule to drive the carrying module to move around the fourth axis to move the wafer carried by the carrying module so that the second surface of the wafer is in the first set posture, and controlling the imaging optical path component to perform dark field imaging on the second surface of the wafer to obtain a corresponding dark field image to be measured; Controlling the darkfield light source assembly to be turned off and simultaneously turning on the brightfield light source assembly to cover the second surface of the wafer with brightfield illumination light, and controlling the imaging optical path assembly to perform brightfield imaging on the second surface of the wafer to obtain a corresponding brightfield image to be measured; Wherein, the first surface and the second surface of the wafer are arranged opposite to each other; The processor controlling the wafer inspection device to return to an initial state includes: The bright field light source assembly is controlled to be turned off, the first driving submodule is controlled to drive the first turntable, and the fourth driving submodule is controlled to drive the carrying module, so that the first turntable and the carrying module return to corresponding initial positions.

[0014] Optionally, if the target detection mode includes a preset sub-detection mode for performing the second type of operation, the processor controlling the wafer detection device to perform posture adjustment and imaging on the wafer according to the target operation includes: Controlling the first driving submodule to drive the first turntable to move around the first axis, and controlling the fourth driving submodule to drive the carrying module to move around the fourth axis, so as to move the carrying module to a first position and place the first surface of the wafer carried by the carrying module in a first set posture; Controlling the brightfield light source assembly to turn on, and sequentially switching a plurality of colors of brightfield illumination light to cover the first surface of the wafer, and controlling the imaging optical path assembly to perform brightfield imaging on the first surface of the wafer under each color of brightfield illumination light, so as to obtain brightfield images to be measured of the first surface of the wafer corresponding to the plurality of colors of brightfield illumination light respectively; Controlling the fourth driving submodule to drive the carrying module to move around the fourth axis to move the wafer carried by the carrying module so that the second surface of the wafer is in the first set posture, and controlling the bright field light source assembly to sequentially switch the multiple colors of bright field illumination light to cover the second surface of the wafer, and controlling the imaging optical path assembly to perform bright field imaging on the second surface of the wafer under each color of bright field illumination light to obtain bright field images of the second surface of the wafer corresponding to the multiple colors of bright field illumination light; The processor controlling the wafer inspection device to return to an initial state includes: The bright field light source assembly is controlled to be turned off, the first driving submodule is controlled to drive the first turntable, and the fourth driving submodule is controlled to drive the carrying module, so that the first turntable and the carrying module return to corresponding initial positions.

[0015] Optionally, if the target detection mode includes a preset sub-detection mode for performing a third type of operation, the processor controlling the wafer detection device to perform posture adjustment and imaging on the wafer according to the target operation includes: Controlling the first driving submodule to drive the first turntable to move around the first axis, and controlling the fourth driving submodule to drive the carrying module to move around the fourth axis, so as to move the carrying module to a first position and place the first surface of the wafer carried by the carrying module in a first set posture; Controlling the bright field light source assembly to turn on so that the bright field illumination light covers the first surface of the wafer; Controlling the second driving submodule to drive the angle adjustment module to move from the first limit position of the second axis to the second limit position, while controlling the third driving submodule to drive the second turntable to move around the third axis, so that the first surface of the wafer is in a plurality of different postures, so that the user can observe the first surface of the wafer at a plurality of different angles; and controlling the imaging optical path component to perform bright field imaging on the first surface of the wafer in each posture, to obtain bright field images of the first surface of the wafer corresponding to the plurality of different postures; When the angle adjustment module reaches the second limit, the bright field light source assembly is controlled to be turned off while the dark field light source assembly is turned on, and the fourth driving submodule is controlled to drive the carrying module to move around the fourth axis, so that the second surface of the wafer is in the first set posture and the dark field illumination light covers the second surface of the wafer; controlling the second driving submodule to drive the angle adjustment module to move from the second limit position of the second axis to the first limit position, while controlling the third driving submodule to drive the second turntable to move around the third axis, so that the second surface of the wafer is in a plurality of different postures, so that a user can observe the second surface of the wafer at a plurality of different angles; and controlling the imaging optical path component to perform dark field imaging on the second surface of the wafer in each posture, to obtain dark field images of the second surface of the wafer corresponding to the plurality of different postures; The processor controlling the wafer inspection device to return to an initial state includes: Control the dark field light source assembly to turn off, control the first driving submodule to drive the first turntable, control the second driving submodule to drive the angle adjustment module, control the third driving submodule to drive the second turntable, and control the fourth driving submodule to drive the carrying module, so that the first turntable, the angle adjustment module, the second turntable, and the carrying module return to corresponding initial positions.

[0016] On the other hand, a computer-readable storage medium is provided, in which a computer program is stored. When the computer program is executed by a processor, the control method of the wafer detection device or the steps of the wafer detection method described above are implemented.

[0017] On the other hand, a computer program product comprising instructions is provided. When the instructions are executed on a computer, the computer executes the control method of the wafer inspection device or the steps of the wafer inspection method described above.

[0018] The technical solution provided by this application can at least bring the following beneficial effects: The present application determines the target detection mode of the wafer detection equipment, and can use one sub-detection mode from multiple sub-detection modes as the target detection mode, or use a combination of at least two sub-detection modes from multiple sub-detection modes in a predetermined execution order as the target detection mode. In this way, the wafer detection mode can be determined according to actual needs, thereby improving the flexibility of the wafer detection equipment during wafer detection; and the multiple sub-detection modes include at least two sub-detection modes from multiple preset sub-detection modes and / or custom sub-detection modes, wherein the preset sub-detection mode is used to perform macro-detection on the wafer through corresponding operations, and the custom sub-detection mode is used to perform macro-detection on the wafer through custom operations set by the user. Therefore, not only can the method of performing macro-detection on the wafer be selected according to actual needs, but also the macro-detection of the wafer can be performed through custom operations set by the user. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 A schematic structural diagram of a high-degree-of-freedom wafer inspection device provided in an embodiment of the present application; Figure 2 A schematic structural diagram of another high-degree-of-freedom wafer inspection device provided in an embodiment of the present application; Figure 3 A flowchart of a control method for a wafer inspection device provided in an embodiment of the present application; Figure 4 A flowchart of a wafer inspection method provided in an embodiment of the present application. DETAILED DESCRIPTION

[0020] The present invention will be further described in detail below by means of specific embodiments in conjunction with the accompanying drawings. Similar elements in different embodiments are numbered with associated similar elements. In the following embodiments, many detailed descriptions are provided to enable the present application to be better understood. However, those skilled in the art will readily appreciate that some of the features may be omitted in different circumstances, or may be replaced by other elements, materials, or methods. In some cases, some operations related to the present application are not shown or described in the specification. This is to avoid the core portion of the present application being overwhelmed by excessive descriptions, and for those skilled in the art, it is not necessary to describe these related operations in detail. They will fully understand the related operations based on the description in the specification and the general technical knowledge in the art.

[0021] In addition, the features, operations, or characteristics described in the specification may be combined in any appropriate manner to form various embodiments. Furthermore, the steps or actions in the method description may be reordered or adjusted in a manner readily apparent to those skilled in the art. Therefore, the various sequences in the specification and drawings are provided solely for the purpose of clearly describing a particular embodiment and are not intended to be mandatory, unless otherwise specified.

[0022] Component numbers used herein, such as "first" and "second," are used solely to distinguish the components being described and do not convey any sequential or technical meaning. References to "connection" and "coupling" herein, unless otherwise specified, include both direct and indirect connections (couplings).

[0023] Before explaining in detail the control method of the wafer inspection equipment provided in the embodiment of the present application, the application scenarios and implementation environment involved in the embodiment of the present application are first introduced.

[0024] Wafer inspection technology can be categorized into macro and micro inspection based on the inspection scale. Macro inspection is an automated optical inspection technology based on optical principles, including macro brightfield and macro darkfield inspection. Optical components such as lenses, cameras, and light sources work in conjunction with a motion platform to produce optical images of the wafer under inspection. Macro inspection is commonly used to detect defects such as dust particles, scratches, dirt, and chipped edges on both unpatterned and patterned wafers, playing a crucial role in controlling wafer production yield. However, existing wafer macro inspection equipment has a high market share from foreign companies and a low domestic production rate. Technical research for macro inspection is still immature, and within the technical scope of macro optical inspection, it is not possible to reliably achieve accurate recognition of all surface defects on the wafer by both the human eye and cameras through imaging. Furthermore, some equipment is limited by a relatively fixed optical imaging system, meaning that the imaging position and angle cannot accurately capture defects. This makes it difficult to meet the demands of macro inspection for wafers.

[0025] Based on this, the embodiments of the present application provide a wafer inspection device and a control method thereof for macroscopic inspection of wafers that combines multi-angle, multi-spectral, automation, and light and dark fields, and is adapted to the human eye and imaging system.

[0026] Please refer to Figure 1 , Figure 1 Schematic diagram of a high-degree-of-freedom wafer inspection device provided in an embodiment of the present application. The wafer inspection device includes a multi-axis translation stage 1, an imaging optical path component 2, a bright field light source component 3, a dark field light source component 4, a drive component 5, and a processor 6.

[0027] Among them, please refer to Figure 2The multi-axis translation stage 1 includes a carrying module 11, a driving module 12 (not shown in the figure), a turntable module 13 and an angle adjustment module 14. The carrying module is used to carry the wafer. The driving module 12 includes a first driving sub-module, a second driving sub-module, a third driving sub-module and a fourth driving sub-module (not shown in the figure). The turntable module 13 includes a first turntable 131 and a second turntable 131; the first driving sub-module is used to drive the first turntable 131 to move around the first axis, the second driving sub-module is used to drive the angle adjustment module 14 to move around the second axis, the third driving sub-module is used to drive the second turntable 132 to move around the third axis, and the fourth driving sub-module is used to drive the carrying module 11 to move around the fourth axis; the first axis, the second axis, the third axis and the fourth axis are all different.

[0028] That is to say, the multi-axis translation stage 1 includes four different axial directions: the first axis, the second axis, the third axis, and the fourth axis. As an example, the first axis is the Z axis, the second axis is the T axis, the third axis is the R axis, and the fourth axis is the F axis.

[0029] As can be seen from the above description, the multi-axis translation stage 1 has four different axial directions. Therefore, to drive the corresponding components of the multi-axis translation stage 1 to move about the corresponding axial directions, the multi-axis translation stage 1 further needs to include a drive module 12. Specifically, the drive module 12 may include a first drive submodule for driving the first turntable 131 about the first axis, a second drive submodule for driving the angle adjustment module 14 about the second axis, a third drive submodule for driving the second turntable 132 about the third axis, and a fourth drive submodule for driving the carrier module 11 about the fourth axis.

[0030] It should be noted that the above description is based on the fact that the driving module 12 includes a first driving submodule, a second driving submodule, a third driving submodule, and a fourth driving submodule, and the above four driving submodules respectively drive corresponding components. Alternatively, in application, more or fewer driving submodules can be used to drive the corresponding components. For example, one driving submodule can drive the first turntable 131 to move around the first axis, the angle adjustment module 14 to move around the second axis, the second turntable 132 to move around the third axis, and the carrier module 11 to move around the fourth axis. In other words, the embodiment of the present application does not limit the number of driving submodules.

[0031] from Figure 2 It can be seen that the angle adjustment module 14 is located on the upper layer of the second turntable 132 , the second turntable 132 is located on the upper layer of the first turntable 131 , the carrying module 11 is located on the upper layer of the angle adjustment module 14 , and the carrying module 11 is used to carry wafers.

[0032] In this way, when the fourth driving sub-module drives the carrying module 11 to move around the fourth axis, it also drives the carried wafer to move around the fourth axis.

[0033] When the third driving submodule drives the second turntable 132 to move around the third axis, since the carrying module 11 is located on the upper layer of the second turntable 132, it will also drive the carrying module 11 to move around the third axis, and then drive the carried wafer to move around the third axis.

[0034] When the second driving submodule drives the angle adjustment module 14 to move around the second axis, since the carrying module 11 is located on the upper layer of the angle adjustment module 14, it will also drive the carrying module 11 to move around the second axis, and then drive the carried wafer to move around the second axis.

[0035] When the first driving submodule drives the first turntable 131 to move around the first axis, since the second turntable 132 is located on the upper layer of the first turntable 131, it will also drive the second turntable 132 to move around the first axis; the angle adjustment module 14 is located on the upper layer of the second turntable 132, so after the second turntable 132 rotates, it will also drive the angle adjustment module 14 to move around the first axis; the carrying module 11 is located on the upper layer of the angle adjustment module 14, and the carrying module 11 is used to carry the wafer, so after driving the angle adjustment module 14 to move around the first axis, it will also drive the carrying module 11 to move around the first axis, and then drive the carried wafer to move around the first axis.

[0036] In addition, in some embodiments, please refer to Figure 2 The multi-axis translation stage 1 further includes a translation stage bracket 15 , which is located on the stage bracket and is used to install the multi-axis translation stage 1 .

[0037] The imaging optical path component 2 includes an image sensor 21 and an optical lens 22; the imaging optical path component 2 is used to optically image the wafer carried by the carrying module 11 through the optical lens 22, and transmit the optical signal obtained by imaging to the image sensor 21, and the image sensor 21 is used to convert the optical signal into an electrical signal.

[0038] In some embodiments, the image sensor 21 may be an area array camera, for example, the image sensor 21 may be a TDI (Time Delayed and Integration) camera.

[0039] In addition, in some embodiments, please refer to Figure 2 The imaging optical path component 2 further includes a sensor adjustment device 23, which is used to adjust the angle and position of the image sensor 21, for example, adjusting the pitch angle, horizontal position, vertical position, etc. of the image sensor 21.

[0040] It should be noted that, in addition to the image sensor 21 and the optical lens 22, the imaging optical path assembly 2 may also include other components, such as other optical devices arranged in the optical path between the image sensor 21 and the optical lens 22, such as a collimating lens, a filter, a spectrometer, etc.

[0041] The bright field light source assembly 3 is used to emit a bright field light source so as to use bright field illumination light for illumination during bright field imaging.

[0042] In some embodiments, please refer to Figure 2 The brightfield light source assembly 3 may include multiple brightfield light sources, which may be the same or different. As an example, the brightfield light source assembly 3 may include any one or more of an LED (Light Emitting Diode), a xenon lamp, a mercury lamp, a halogen lamp, a laser lamp, a laser plasma lamp, and a laser-driven white light source lamp. Therefore, the brightfield light source may be white light, colored light, or laser.

[0043] In addition, in some embodiments, please refer to Figure 2 The bright field light source assembly 3 also includes a light source adjustment device 31, which is used to install the bright field light source. The light source adjustment device 31 has a plurality of mounting holes, thereby allowing the installation position and angle of the bright field light source to be adjusted according to the required lighting range.

[0044] The dark field light source assembly 4 includes at least two dark field light sources located in different directions, and is used to emit dark field light so as to use dark field illumination light for illumination during dark field imaging.

[0045] In some embodiments, please refer to Figure 2 The dark field light source assembly 4 may include a first dark field light source module 41, a second dark field light source module 42, a third dark field light source module 43 and a fourth dark field light source module 44, and Figure 2 It can be seen from the figure that the directions of the above four dark field light source modules are different.

[0046] In addition, in some embodiments, please refer to Figure 2The dark field light source assembly 4 further includes a first dark field light source adjustment device 45, a second dark field light source adjustment device 46, a third dark field light source adjustment device 47, and a fourth dark field light source adjustment device 48. The first dark field light source adjustment device 45 is used to install and adjust the dark field light source in the first dark field light source module 41. It has a plurality of mounting holes, which can adjust the installation angle and height of the dark field light source in the first dark field light source module 41. The second dark field light source adjustment device 46 is used to install and adjust the dark field light source in the second dark field light source module 42. It has a plurality of mounting holes, which can adjust the installation angle and height of the dark field light source in the second dark field light source module 42. The third dark field light source adjustment device 47 is used to install and adjust the dark field light source in the third dark field light source module 43. It has a plurality of mounting holes, which can adjust the installation angle and height of the dark field light source in the third dark field light source module 43. The fourth dark field light source adjustment device 48 is used to install and adjust the dark field light source in the fourth dark field light source module 44. It has a plurality of mounting holes, which can adjust the installation angle and height of the dark field light source in the fourth dark field light source module 44.

[0047] Continuing the above description, from Figure 2 As can be seen in FIG, the first dark field light source module 41 , the second dark field light source module 42 , the third dark field light source module 43 and the fourth dark field light source module 44 may each include a plurality of dark field light sources.

[0048] In some embodiments, the bright field light source in the bright field light source assembly 3 can be adjusted within a range of 0° to 60°, and the dark field light source in the dark field light source assembly 4 can be adjusted within a range of 0° to 40°.

[0049] The driving assembly 5 is used to drive the multi-axis translation stage 1 and the optical lens 22 to move relative to each other.

[0050] The driving component 5 may drive the multi-axis translation stage 1 to move while the optical lens 22 remains stationary, or the driving component 5 may drive the optical lens 22 to move while the multi-axis translation stage 1 remains stationary, or the driving component 5 may drive the multi-axis translation stage 1 and the optical lens 22 to move.

[0051] For example, the driving component 5 drives the multi-axis translation stage 1 and the optical lens 22 to move relative to each other along the scanning direction. The driving component 5 may drive the multi-axis translation stage 1 to move along the scanning direction while the optical lens 22 remains stationary, or the driving component 5 drives the optical lens 22 to move along the scanning direction while the multi-axis translation stage 1 remains stationary, or the driving component 5 drives the multi-axis translation stage 1 to move and drives the optical lens 22 to move to achieve relative movement of the two along the scanning direction.

[0052] As another example, the driving component 5 drives the multi-axis translation stage 1 and the optical lens 22 to move relative to each other along the optical axis direction of the optical lens 22. The driving component 5 may drive the multi-axis translation stage 1 to move along the optical axis direction while the optical lens 22 remains stationary, or the driving component 5 drives the optical lens 22 to move along the optical axis direction while the multi-axis translation stage 1 remains stationary, or the driving component 5 drives the multi-axis translation stage 1 to move and drives the optical lens 22 to move so as to achieve relative movement of the two along the optical axis direction.

[0053] In some embodiments, the driving component 5 can be implemented based on driving components such as piezoelectric, servo motor, DD motor, etc.

[0054] The processor 6 includes but is not limited to a central processing unit (CPU), a microcontroller unit (MCU), a field-programmable gate array (FPGA), and a digital signal processing (DSP), etc., which are devices used to interpret computer instructions and process data in computer software.

[0055] In some embodiments, the processor 6 is capable of executing various computer applications in the non-transitory computer-readable storage medium, thereby performing corresponding steps and methods. For example, the processor 6 can be implemented by software, hardware, firmware, or a combination thereof, and can use at least one of a circuit, a single or multiple application-specific integrated circuits (ASICs), a digital signal processor 6 (DSPs), a digital signal processing device (DSPD), a programmable logic device (PLD), a field programmable gate array (FPGA), a central processing unit (CPU), a controller, a microcontroller, and a microprocessor, so that the processor 6 can execute some or all of the steps or any combination of the steps of the lighting mode switching method in various embodiments of the present application, or the processor 6 can execute some or all of the steps or any combination of the steps of the wafer inspection method in various embodiments of the present application.

[0056] In addition, in some embodiments, please refer to Figure 2The wafer inspection equipment also includes a mounting bracket 7, which is used to install fixing parts of optical elements such as the imaging optical path component 2, the bright field light source component 3, and the dark field light source component 4, so as to fix the relevant components in the imaging optical path component 2, the bright field light source component 3, and the dark field light source component 4.

[0057] In some embodiments, if the target detection mode includes a preset sub-detection mode for performing a first type of operation, the processor 6 controls the wafer detection equipment to adjust the posture and image the wafer according to the target operation, including: controlling the first driving submodule to drive the first turntable 131 to move around the first axis, and controlling the fourth driving submodule to drive the carrying module 11 to move around the fourth axis, moving the carrying module 11 to a first position, and making the first surface of the wafer carried by the carrying module 11 be in a first set posture; controlling the bright field light source component 3 to turn on so that the bright field illumination light covers the first surface of the wafer, and controlling the imaging optical path component 2 to perform bright field imaging on the first area to obtain a corresponding bright field image to be tested; controlling the bright field light source component 3 to turn off while turning on the dark field light source component 4 so that the dark field illumination light covers the first surface of the wafer, and controlling the imaging optical path component 2 to perform dark field imaging on the first surface of the wafer to obtain a corresponding dark field image to be tested; controlling the fourth driving submodule to drive the carrying module 11 to move around the fourth axis to move the wafer carried by the carrying module 11, so that the second surface of the wafer is in a first set posture, and controlling the imaging optical path component 2 to perform dark field imaging on the second surface of the wafer to obtain a corresponding dark field image to be tested; controlling the dark field light source component 4 to be turned off while turning on the bright field light source component 3 to turn on so that the bright field illumination light covers the second surface of the wafer, and controlling the imaging optical path component 2 to perform bright field imaging on the second surface of the wafer to obtain a corresponding bright field image to be tested; wherein, the first surface and the second surface of the wafer are arranged back to back; the processor 6 controls the wafer detection equipment to return to the initial state, including: controlling the bright field light source component 3 to be turned off, controlling the first driving submodule to drive the first turntable 131 and controlling the fourth driving submodule to drive the carrying module 11, so that the first turntable 131 and the carrying module 11 return to the corresponding initial positions.

[0058] In some embodiments, in order to detect large-area scratches, particle contamination, pits, and other defects on the front and back sides of the wafer, the target operation may include a preset sub-inspection mode for performing the first type of operation.

[0059] In addition, in some embodiments, after the wafer is loaded onto the carrying module 11, the multi-axis translation stage 1 needs to be initialized first, that is, the first turntable 131, the angle adjustment module 14, the second turntable 132 and the carrying module 11 are adjusted to the initial state, i.e., the "0 position". At the "0" position, the angle between the surface of the wafer and the horizontal plane is 0° (i.e., the surface of the wafer is parallel to the horizontal plane and there is no tilt), the first axis is at the position of 0mm, and the second axis is at the position of 0°.

[0060] After initializing the multi-axis translation stage 1, in order to place the exact center of the wafer on the focal plane so as to better detect the wafer in subsequent processes, the processor 6 can also control the first driving submodule to drive the first turntable 131 to move around the first axis, thereby moving the carrying module 11 to the first position, that is, the focal plane position, and then driving the carried wafer to move to the first position. For example, the first position can make the angle between the surface of the wafer and the surface of the image detector 15°, that is, the exact center of the wafer is on the focal plane of the imaging optical path component 2 at this position.

[0061] The processor 6 also needs to control the fourth driving submodule to move around the fourth axis so that the first surface of the wafer carried by the carrying module 11 is in a first set posture, where the first preset posture is a posture for imaging the wafer pre-set by the technician.

[0062] In some embodiments, in the first position, since the imaging optical path component 2 is not perpendicular to the wafer, that is, the wafer may be distorted in the x-axis direction or the y-axis direction, which affects the imaging. A correction algorithm can also be used to adjust the diameter of the wafer in the x-axis direction or the y-axis direction to be consistent and distortion-free.

[0063] It should be noted that the correction algorithm can be any existing or future correction algorithm, and the embodiments of the present application do not limit this.

[0064] In addition, in some embodiments, the first surface is the front side of the wafer. Because the first surface of the wafer is in the first set posture, the first surface of the wafer can be inspected in subsequent processes.

[0065] After the first surface of the wafer is in the first set posture, in order to perform bright field detection on the first surface of the wafer, the processor 6 also needs to control the bright field light source component 3 to turn on so that the bright field illumination light covers the first surface of the wafer, and control the imaging optical path component 2 to perform bright field imaging on the first area, thereby obtaining the bright field test image corresponding to the first surface of the wafer.

[0066] After performing bright field detection on the first surface of the wafer, dark field detection can also be performed on the first surface of the wafer. Then, the processor 6 also needs to control the bright field light source component 3 to be turned off while turning on the dark field light source component 4, so that the dark field illumination light covers the first surface of the wafer, and control the imaging light path component 2 to perform dark field imaging on the first surface of the wafer, so as to obtain the dark field test image corresponding to the first surface of the wafer.

[0067] After performing bright field detection and dark field detection on the first surface of the wafer, the second surface of the wafer also needs to be detected. Therefore, the processor 6 also needs to control the fourth driving submodule to drive the carrying module 11 to move around the fourth axis, thereby flipping the wafer so that the second surface of the wafer is in the first set posture.

[0068] In some embodiments, the second surface is the back side of the wafer. Because the second surface of the wafer is in the first set posture, the second surface of the wafer can be inspected in a subsequent process.

[0069] Based on the above description, it can be seen that the current dark field light source component 4 is turned on and the bright field light source component 3 is turned off. Therefore, after the second surface of the wafer is in the first set posture, the processor 6 can directly control the imaging optical path component 2 to perform dark field imaging on the second surface of the wafer to obtain a dark field test image corresponding to the second surface of the wafer.

[0070] After performing dark field detection on the second surface of the wafer, bright field imaging of the second surface of the wafer is also required. Therefore, the processor 6 also needs to control the dark field light source component 4 to be turned off while turning on the bright field light source component 3, and control the imaging optical path component 2 to perform bright field imaging on the second surface of the wafer, so as to obtain the bright field test image corresponding to the second surface of the wafer.

[0071] It should be noted that the above description is based on the first surface of the wafer being the front side of the wafer and the second surface of the wafer being the back side of the wafer. Alternatively, in actual applications, the first surface can be the back side of the wafer and the second surface can be the front side of the wafer. It is only necessary for the first surface and the second surface of the wafer to be arranged back to back. The embodiments of the present application do not limit this.

[0072] After the wafer inspection is completed, the processor 6 also needs to control the wafer inspection equipment to return to the initial state.

[0073] Based on the above description, it can be seen that after the first type of operation is completed, the bright field light component is in the open state, and the first turntable 131 and the carrier module 11 may also be driven to other positions. Therefore, the processor 6 needs to control the bright field light source component 3 to turn off, and control the first driving submodule to drive the first turntable 131 and control the fourth driving submodule to drive the carrier module 11, so that the wafer detection equipment returns to the initial state.

[0074] In some embodiments, if the target detection mode includes a preset sub-detection mode for performing the second type of operation, the processor 6 controls the wafer detection equipment to adjust the posture and image the wafer according to the target operation, including: controlling the first driving submodule to drive the first turntable 131 to move around the first axis, and controlling the fourth driving submodule to drive the carrying module 11 to move around the fourth axis, moving the carrying module 11 to the first position, so that the first surface of the wafer carried by the carrying module 11 is in a first set posture; controlling the bright field light source component 3 to turn on, and sequentially switching a plurality of colors of bright field illumination light to cover the first surface of the wafer, and controlling the imaging optical path component 2 to perform bright field imaging on the first surface of the wafer under each color of bright field illumination light to obtain the first surface of the wafer corresponding to the plurality of colors of bright field illumination light. bright field image to be tested; controlling the fourth driving submodule to drive the carrying module 11 to move around the fourth axis to move the wafer carried by the carrying module 11 so that the second surface of the wafer is in a first set posture, and controlling the bright field light source component 3 to sequentially switch a plurality of colors of bright field illumination light to cover the second surface of the wafer, and controlling the imaging optical path component 2 to perform bright field imaging on the second surface of the wafer under each color of bright field illumination light to obtain bright field images of the second surface of the wafer corresponding to the plurality of colors of bright field illumination light; the processor 6 controls the wafer detection equipment to return to the initial state, including: controlling the bright field light source component 3 to turn off, controlling the first driving submodule to drive the first turntable 131 and controlling the fourth driving submodule to drive the carrying module 11, so that the first turntable 131 and the carrying module 11 return to the corresponding initial positions.

[0075] In some embodiments, in order to detect the different optical properties of the metal layer, oxide layer or film layer on the surface of the wafer under different colors of light, such as the contrast of defects on the wafer will be enhanced under different colors of light, or the color difference between different layers of the wafer will be more obvious, etc., the target operation may include a preset self-detection mode for performing the second type of operation.

[0076] Similar to the first type of operation mentioned above, the second type of operation also requires initializing the multi-axis translation stage 1. After that, the center of the wafer is placed on the focal plane, and the first surface of the wafer is placed in the first set posture. The above process has been described in detail in the above content and will not be repeated here. Please refer to the relevant content above.

[0077] Continuing with the above description, after the first surface of the wafer is in the first set posture, in order to perform bright field detection on the first surface of the wafer under bright field illumination lights of different colors, the processor 6 also needs to control the bright field light source component 3 to turn on, and sequentially switch between a plurality of bright field illumination lights of different colors, and each color illumination light can cover the first surface of the wafer, and under each color illumination light, the processor 6 needs to control the imaging optical path component 2 to perform corresponding bright field imaging on the first surface of the wafer, thereby, bright field images to be tested of the first surface of the wafer corresponding to a plurality of bright field illumination lights of different colors can be obtained, that is, each color illumination light corresponds to a corresponding bright field image to be tested, so that multiple bright field images to be tested corresponding to the first surface can be obtained.

[0078] After bright field imaging of the first surface of the wafer, bright field detection needs to be performed on the second surface of the wafer. Then, the processor 6 also needs to control the fourth driving submodule to drive the supporting module 11 to move around the fourth axis, so as to flip the wafer so that the second surface of the wafer is in the first set posture.

[0079] After the second surface of the wafer is in the first set posture, in order to perform bright field detection on the second surface of the wafer under bright field illumination lights of different colors, the processor 6 also needs to sequentially switch between a plurality of bright field illumination lights of different colors, and each color illumination light can cover the second surface of the wafer, and under each color illumination light, the processor 6 needs to control the imaging optical path component 2 to perform corresponding bright field imaging on the second surface of the wafer, thereby obtaining bright field images to be tested of the second surface of the wafer corresponding to a plurality of bright field illumination lights of different colors, that is, each color illumination light corresponds to a corresponding bright field image to be tested, and thus, multiple bright field images to be tested corresponding to the second surface can be obtained.

[0080] After the wafer inspection is completed, the processor 6 also needs to control the wafer inspection device to return to the initial state. The operation corresponding to the second type of operation of controlling the wafer inspection device to return to the initial state is the same as that corresponding to the first operation. Please refer to the relevant content above and will not be repeated here.

[0081] In some embodiments, if the target detection mode includes a preset sub-detection mode for performing a third type of operation, the processor 6 controls the wafer detection device to adjust the posture and image the wafer according to the target operation, including: controlling the first driving submodule to drive the first turntable 131 to move around the first axis, and controlling the fourth driving submodule to drive the carrying module 11 to move around the fourth axis, moving the carrying module 11 to a first position so that the first surface of the wafer carried by the carrying module 11 is in a first set posture; controlling the bright field light source assembly 3 to turn on so that the bright field illumination light covers the first surface of the wafer; controlling the second driving submodule to drive the angle adjustment module 14 to move from the first limit to the second limit of the second axis, while controlling the third driving submodule to drive the second turntable 132 to move around the third axis, so that the first surface of the wafer is in multiple different postures, so that the user can observe the first surface of the wafer at multiple different angles; and controlling the imaging optical path assembly 2 to perform bright field imaging on the first surface of the wafer in each posture, to obtain bright field images of the first surface of the wafer corresponding to the multiple different postures; when the angle adjustment module 14 reaches the second limit, controlling the bright field light source assembly 3 to turn off At the same time, the dark field light source assembly 4 is turned on, and the fourth driving submodule is controlled to drive the carrying module 11 to move around the fourth axis, so that the second surface of the wafer is in the first set posture, and the dark field illumination light covers the second surface of the wafer; while controlling the second driving submodule to drive the angle adjustment module 14 to move from the second limit of the second axis to the first limit, the third driving submodule is controlled to drive the second turntable 132 to move around the third axis, so that the second surface of the wafer is in multiple different postures, so that the user can observe the second surface of the wafer at multiple different angles; and the imaging light path assembly is controlled in each posture. Component 2 performs dark field imaging on the second surface of the wafer to obtain bright field test images corresponding to the second surface of the wafer in multiple different postures; the processor 6 controls the wafer detection equipment to return to the initial state, including: controlling the dark field light source component 4 to turn off, controlling the first driving submodule to drive the first turntable 131, controlling the second driving submodule to drive the angle adjustment module 14, controlling the third driving submodule to drive the second turntable 132, and controlling the fourth driving submodule to drive the carrying module 11, so that the first turntable 131, the angle adjustment module 14, the second turntable 132 and the carrying module 11 return to the corresponding initial positions.

[0082] Since the process on the wafer surface may be more complicated, it may be necessary to inspect the wafer at different angles. For example, it may be necessary to capture scattered signals emitted by defects on the wafer surface at different angles to enhance the signal-to-noise ratio of the defect signal through multi-angle detection. The target operation may include a preset sub-detection mode for executing the third category.

[0083] Similar to the first type of operation mentioned above, the third type of operation also requires initializing the multi-axis translation stage 1. After that, the center of the wafer is placed on the focal plane, and the first surface of the wafer is placed in the first set posture. The above process has been described in detail in the above content and will not be repeated here. Please refer to the relevant content above.

[0084] Continuing with the above description, after the first surface of the wafer is in the first set posture, the processor 6 also needs to control the bright field light source assembly 3 to turn on so that the bright field illumination light covers the first surface of the wafer, thereby enabling better observation and bright field detection of the first surface of the wafer in subsequent processes.

[0085] In order to allow the first surface of the wafer to be in multiple different postures so that the user can observe the first surface of the wafer at multiple different angles, the processor 6 needs to control the second driving submodule to drive the angle adjustment module 14 to move from the first limit to the second limit of the second axis, while controlling the third driving submodule to drive the second turntable 132 to move around the third axis.

[0086] As an example, the processor 6 can control the angle adjustment module 14 to move slowly from the first limit of the second axis to the second limit, and at the same time control the second turntable 132 to rotate 360° around the third axis to facilitate human eyes to observe the first surface of the wafer at different angles.

[0087] Moreover, in order to enable the wafer inspection equipment to determine the target observation posture of the first surface of the wafer, that is, the optimal observation posture in the subsequent process, the processor 6 also needs to control the imaging optical path component 2 to perform bright field imaging on the first surface of the wafer at each posture of the first surface of the wafer, so as to obtain the bright field test images corresponding to the first surface of the wafer at multiple different postures.

[0088] After the observation and imaging of the first surface of the wafer is completed, the second surface of the wafer needs to be observed and dark-field detected. Therefore, when the angle adjustment module 14 reaches the second limit, the processor 6 needs to control the bright field light source component 3 to turn off while turning on the dark field light source component 4, and control the fourth driving submodule to drive the carrier module 11 to move around the fourth axis, so that the wafer is flipped, such as controlling the carrier module 11 to flip 180° so that the second surface of the wafer is in the first set posture. And the dark field illumination light can cover the second surface of the wafer, thereby enabling the second surface of the wafer to be better observed and imaged in the subsequent process.

[0089] In order to allow the second surface of the wafer to be in multiple different postures so that the user can observe the second surface of the wafer at multiple different angles, and the current angle adjustment module 14 is located at the second limit of the second axis, then the processor 6 needs to control the second driving submodule to drive the angle adjustment module 14 to move from the second limit value of the second axis to the first limit, while controlling the third driving submodule to drive the second turntable 132 to move around the third axis.

[0090] As an example, the processor 6 can control the angle adjustment module 14 to move slowly from the second limit of the second axis to the first limit, and at the same time control the second turntable 132 to rotate 360° around the third axis to facilitate human eyes to observe the first surface of the wafer at different angles.

[0091] Moreover, in order to enable the wafer inspection equipment to determine the target observation posture of the second surface of the wafer, that is, the optimal observation posture in the subsequent process, the processor 6 also needs to control the imaging optical path component 2 to perform bright field imaging on the second surface of the wafer at each posture of the first surface of the wafer, so as to obtain the dark field test images corresponding to the second surface of the wafer at multiple different postures.

[0092] After the wafer inspection is completed, the processor 6 also needs to control the wafer inspection equipment to return to the initial state.

[0093] Based on the above description, it can be seen that after the third type of operation is completed, the dark field light source assembly 4 is in the open state, and the first turntable 131, the second turntable 132, the angle adjustment module 14 and the carrier module 11 may also be driven to other positions. Therefore, the processor 6 needs to control the dark field light source assembly 4 to turn off, and control the first driving submodule to drive the first turntable 131, control the second driving module 12 to drive the angle adjustment module 14, control the third driving module 12 to drive the second turntable 132, and control the fourth driving submodule to drive the carrier module 11, so as to return the wafer detection equipment to the initial state.

[0094] Next, a control method for a wafer inspection device provided in an embodiment of the present application is explained in detail.

[0095] Figure 3 This is a flow chart of a control method for a wafer inspection device provided by an embodiment of the present application, which is applied to the processor in the above-mentioned wafer inspection device. Figure 3 , the method comprises the following steps: Step 301: Determine a target detection mode of a wafer detection device.

[0096] In some embodiments, one sub-detection mode among multiple sub-detection modes can be used as a target detection mode, or a combination of at least two sub-detection modes among multiple sub-detection modes in a predetermined execution order can be used as a target detection mode; the multiple sub-detection modes include at least two sub-detection modes among multiple preset sub-detection modes and / or custom sub-detection modes; each preset sub-detection mode among the multiple preset sub-detection modes is used to perform macro-detection on the wafer through a corresponding operation, and the custom sub-detection mode is used to perform macro-detection on the wafer through a custom operation set by a user.

[0097] The plurality of preset sub-inspection modes are preset sub-inspection modes, and each of the plurality of preset sub-inspection modes is used to perform macroscopic inspection on the wafer through a corresponding operation. As an example, the plurality of preset sub-inspection modes may include a first preset sub-inspection mode, a second preset sub-inspection mode, and a third preset sub-inspection mode; the custom sub-inspection mode is a user-defined inspection mode, and the custom sub-inspection mode can perform macroscopic inspection on the wafer through a user-defined operation.

[0098] In some embodiments, the multiple sub-detection modes include at least two sub-detection modes from a plurality of preset sub-detection modes and / or custom sub-detection modes. That is, the multiple sub-detection modes may include at least two sub-detection modes from a plurality of preset sub-detection modes, for example, the multiple sub-detection modes may include a first preset sub-detection mode and a second preset sub-detection mode from the preset sub-detection modes, or the multiple sub-detection modes may further include a first preset sub-detection mode, a second preset sub-detection mode, and a third preset sub-detection mode from the preset sub-detection modes. The multiple sub-detection modes may also include at least two sub-detection modes from the custom sub-detection modes, that is, the multiple sub-detection modes may also include only at least two custom sub-detection modes, for example, the multiple sub-detection modes may include a first custom sub-detection mode and a second custom sub-detection mode. Alternatively, the multiple sub-detection modes may further include at least two sub-detection modes from the preset sub-detection modes and the custom sub-detection modes, for example, the multiple sub-detection modes may include a first preset sub-detection mode, a second preset sub-detection mode, a third preset sub-detection mode, and a first custom sub-detection mode.

[0099] In some embodiments, one of the multiple sub-detection modes can be used as the target detection mode. For example, assuming that the multiple sub-detection modes include a first preset sub-detection mode, a second preset sub-detection mode, a third preset sub-detection mode, and a first custom sub-detection mode, any one of the four sub-detection modes can be used as the target detection mode.

[0100] In addition, in some embodiments, a combination of at least two sub-detection modes from a plurality of sub-detection modes in a predetermined execution order may be used as the target detection mode. For example, assuming that the plurality of sub-detection modes include a first preset sub-detection mode, a second preset sub-detection mode, a third preset sub-detection mode, a first custom sub-detection mode, and a second custom sub-detection mode, then the target detection mode may be to first execute the first preset sub-detection mode, then execute the first custom sub-detection mode, or to first execute the second preset sub-detection mode, then execute the first sub-detection mode, and finally execute the third sub-detection mode, or to first execute the second custom sub-detection mode, then execute the third sub-detection mode, then execute the first sub-detection mode, and finally execute the first custom sub-detection mode.

[0101] It should be noted that the above-mentioned target detection mode is only an example. In application, the target detection mode may also include more or fewer sub-detection modes, and the execution order of the sub-detection modes in the target detection mode may also be determined according to actual needs. This embodiment of the present application does not limit this.

[0102] In some embodiments, a user can independently select a target detection mode, and if the target detection mode includes multiple sub-detection modes, the execution order of the multiple sub-detection modes can also be set. In other words, in response to the user's selection operation, a sub-detection mode can be selected from the multiple sub-detection modes, or a combination of at least two of the multiple sub-detection modes in a predetermined execution order can be selected as the target detection mode to determine the target detection mode of the wafer inspection device.

[0103] It should be noted that the user can select a sub-detection mode and determine the execution order of the sub-detection modes through the target detection mode selection interface. Therefore, after the user makes the selection, the target detection mode can be determined in response to the user's selection operation. Alternatively, in the application, the user can also independently select the target detection mode through other methods. The embodiments of the present application are not limited to this.

[0104] Step 302: Obtain the corresponding target operation based on the target detection mode.

[0105] In some embodiments, each sub-detection mode in the target detection mode has a corresponding operation. Therefore, after determining the target detection mode, it is also necessary to obtain the target operation corresponding to the target detection mode.

[0106] For example, assuming that the target detection mode is to first execute the first preset sub-mode and then execute the third preset sub-mode, and the first preset sub-mode corresponds to the first type of operation and the third preset sub-mode corresponds to the third type of operation, then the corresponding target operation is to first perform the first type of operation and then perform the third type of operation; for another example, assuming that the target detection mode is to first execute the first custom sub-mode, then execute the second preset sub-mode, and finally execute the first preset sub-mode, and the first custom sub-mode corresponds to the first custom operation, the first preset sub-mode corresponds to the first type of operation, and the second preset sub-mode corresponds to the second type of operation, then the corresponding target operation is to first perform the first custom operation, then perform the second type of operation, and finally perform the first type of operation.

[0107] Step 303: Control the wafer inspection device to perform posture adjustment and imaging on the wafer according to the target operation corresponding to the target detection mode, so as to obtain at least one image to be tested.

[0108] In some embodiments, if the target detection mode includes a preset sub-detection mode for performing the first type of operation, the wafer detection equipment can be controlled according to the following steps (1)-(5) to perform posture adjustment and imaging on the wafer according to the target operation corresponding to the target detection mode to obtain at least one image to be tested.

[0109] (1) Controlling a multi-axis translation stage carrying a wafer to move so that a first surface of the wafer is in a first set posture.

[0110] (2) Controlling the bright field light source to turn on so that the bright field illumination light covers the first surface of the wafer, and controlling the image sensor to perform bright field imaging on the first surface of the wafer to obtain a corresponding bright field image to be measured.

[0111] (3) Controlling the bright field light source to be turned off while turning on the dark field light source, so that the dark field illumination light covers the first surface of the wafer, and controlling the image sensor to perform dark field imaging on the first surface of the wafer to obtain a corresponding dark field image to be measured.

[0112] (4) Controlling the multi-axis translation stage carrying the wafer to move so that the second surface of the wafer is in a first set posture, and controlling the image sensor to perform dark field imaging on the second surface of the wafer to obtain a corresponding dark field image to be measured.

[0113] (5) Controlling the dark field light source to be turned off while turning on the bright field light source, and controlling the image sensor to perform bright field imaging on the second surface of the wafer to obtain the corresponding bright field image to be measured.

[0114] The first surface and the second surface of the wafer are arranged opposite to each other.

[0115] It should be noted that the processes of steps (1) to (5) corresponding to the above-mentioned first type of operation have been described in detail above and will not be repeated here. Please refer to the relevant content above.

[0116] In some embodiments, if the target detection mode includes a preset sub-detection mode for performing the second type of operation, the wafer detection equipment can be controlled according to the following steps (1)-(3) to perform posture adjustment and imaging on the wafer according to the target operation corresponding to the target detection mode to obtain at least one image to be tested.

[0117] (1) Controlling a multi-axis translation stage carrying a wafer to move so that a first surface of the wafer is in a first set posture.

[0118] (2) Controlling the bright field light source to turn on, and sequentially switching the bright field illumination lights of multiple colors to cover the first surface of the wafer, and controlling the image sensor to perform bright field imaging on the first surface of the wafer under each color of bright field illumination light, so as to obtain bright field test images of the first surface of the wafer corresponding to the bright field illumination lights of multiple colors.

[0119] (3) Controlling the multi-axis translation stage carrying the wafer to move so that the second surface of the wafer is in a first set posture, controlling the bright field light source to sequentially switch the bright field illumination lights of multiple colors to cover the second surface of the wafer, and controlling the image sensor to perform bright field imaging on the second surface of the wafer under each color of bright field illumination light, so as to obtain bright field test images of the second surface of the wafer corresponding to the bright field illumination lights of multiple colors.

[0120] It should be noted that the processes of steps (1) to (3) corresponding to the above-mentioned second type of operation have been described in detail above and will not be repeated here. Please refer to the relevant content above.

[0121] In some embodiments, if the target detection mode includes a preset sub-detection mode for performing the third type of operation, the wafer detection equipment can be controlled according to the following steps (1)-(4) to perform posture adjustment and imaging on the wafer according to the target operation corresponding to the target detection mode to obtain at least one image to be tested.

[0122] (1) Controlling the multi-axis translation stage carrying the wafer to move so that the first surface of the wafer is in a first set posture, and controlling the bright field light source to turn on so that the bright field illumination light covers the first surface of the wafer.

[0123] (2) Controlling the multi-axis translation stage carrying the wafer to move so that the first surface of the wafer is in a plurality of different postures, so that the user can observe the first surface of the wafer from a plurality of different angles; and controlling the image sensor to perform bright field imaging on the first surface of the wafer in each posture, thereby obtaining bright field images of the first surface of the wafer corresponding to the plurality of different postures.

[0124] (3) Controlling the bright field light source to be turned off while turning on the dark field light source, and controlling the multi-axis translation stage carrying the wafer to move so that the second surface of the wafer is in a first set posture and the dark field illumination light covers the second surface of the wafer.

[0125] (4) Controlling the multi-axis translation stage carrying the wafer to move so that the second surface of the wafer is in a plurality of different postures, so that the user can observe the second surface of the wafer from a plurality of different angles; and controlling the image sensor to perform dark field imaging on the second surface of the wafer in each posture, thereby obtaining dark field images of the second surface of the wafer corresponding to the plurality of different postures.

[0126] It should be noted that the processes of steps (1) to (4) corresponding to the above-mentioned third type of operation have been described in detail above and will not be repeated here. Please refer to the relevant content above.

[0127] In some embodiments, in order to better detect the wafer, the target posture can also be determined in response to a click operation or a trigger signal. The target posture is used to indicate the posture that the first surface of the wafer or the second surface of the wafer needs to be in. Then, the multi-axis translation stage carrying the wafer is controlled to move so that the first surface or the second surface of the wafer is in the target posture, so that the user can observe the first surface of the wafer or the second surface of the wafer; under the target posture, the image sensor is controlled to perform bright field imaging of the first surface of the wafer or dark field imaging of the second surface of the wafer.

[0128] Based on the above description, it can be seen that under the third type of operation, the user can observe the first surface and the second surface of the wafer at multiple different angles. Then, when the user observes the first surface of the wafer at multiple angles, the user can click the corresponding button or control to make the first surface of the wafer evenly illuminated, and the posture of the wafer where the defect features can be clearly observed is determined as the target posture corresponding to the first surface. Similarly, when the user observes the second surface of the wafer at multiple different angles, the user can also click the corresponding button or control to make the second surface of the wafer evenly illuminated, and the posture of the wafer where the defect features can be clearly observed is determined as the target posture corresponding to the second surface. Thus, the target posture can be determined in response to the click operation.

[0129] In addition, based on the above description, it can be seen that under the third type of operation, the image sensor can also be controlled to perform bright field imaging on the first surface of the wafer and dark field imaging on the second surface of the wafer at each posture. Then, the wafer inspection equipment can determine the target posture corresponding to the first surface based on the bright field test images corresponding to the first surface of the wafer at multiple different postures; similarly, the wafer inspection equipment can also determine the target posture corresponding to the second surface of the wafer based on the dark field test images corresponding to the second surface of the wafer at multiple different postures. In this way, the target posture can be determined in response to the trigger signal.

[0130] Continuing with the above description, after determining the target posture corresponding to the first surface or the target posture corresponding to the second surface, the multi-axis translation stage carrying the wafer can also be moved so that the first surface of the wafer is in the corresponding target posture or the second surface of the wafer is in the corresponding target posture, thereby facilitating the user to better observe the first surface or the second surface of the wafer, and under the target posture, control the image sensor to perform bright field imaging of the first surface of the wafer and / or dark field imaging of the second surface of the wafer, so as to obtain more accurate bright field images to be tested and more accurate dark field images to be tested.

[0131] In some embodiments, if the target detection mode includes a custom sub-detection mode for performing custom operations, before determining the target detection mode of the wafer detection equipment, it is also necessary to respond to the user's setting operation, determine the custom operation corresponding to the custom sub-detection mode of the wafer detection equipment, and obtain the custom operation set by the user.

[0132] As an example, a user can set custom operations in the custom operation setting interface, which may include adjusting a light source, moving a multi-axis stage, etc. Thus, after the user completes setting the custom operation corresponding to a custom sub-detection mode, the user-set custom operation can be retrieved. In subsequent processes, if the target detection mode includes a custom sub-detection mode for executing a custom operation, the custom operation can be directly retrieved.

[0133] It should be noted that the above description is based on the user setting a custom operation in the custom operation setting interface, or the user can also set a custom operation in other ways in the application. The embodiment of the present application does not limit this.

[0134] Then, when the target detection mode includes a custom sub-detection mode for performing custom operations, the implementation process of controlling the wafer detection equipment to adjust the posture and image the wafer according to the target operation corresponding to the target detection mode to obtain at least one image to be tested includes: controlling the bright field light source, dark field light source, and multi-axis translation stage carrying the wafer of the wafer detection equipment to operate according to the custom operation corresponding to the custom sub-detection mode, and controlling the image sensor to perform corresponding imaging on the first surface of the wafer or the second surface of the wafer to obtain at least one image to be tested.

[0135] In some embodiments, the target detection mode includes one or more sub-detection modes. When executing any sub-detection mode included in the target detection mode, the execution starts from the initial state of the wafer detection equipment, and when the current sub-detection mode is executed, the wafer detection equipment is controlled to return to the initial state.

[0136] For example, assuming that the target detection mode includes a preset sub-detection mode for performing a first type of operation, then before performing the first type of operation, if the wafer detection equipment is not in the initial state, it is necessary to control the wafer detection equipment to return to the initial state, and then perform the first type of operation; after the first type of operation is completed, it is necessary to control the wafer detection equipment to return to the initial state.

[0137] For another example, assuming that the target detection mode includes a preset sub-detection mode for performing the second type of operation and a preset sub-detection mode for performing the third type of operation, then before performing the second type of operation, if the wafer detection equipment is not in the initial state, it is necessary to control the wafer detection equipment to return to the initial state before performing the second type of operation; after the second type of operation is completed, it is necessary to control the wafer detection equipment to return to the initial state before performing the third type of operation; after the third type of operation is completed, it is also necessary to control the wafer detection equipment to return to the initial state. In this way, automatic return control can be achieved.

[0138] The embodiment of the present application determines the target detection mode of the wafer detection equipment, and can use one sub-detection mode from multiple sub-detection modes as the target detection mode, or use a combination of at least two sub-detection modes from multiple sub-detection modes in a predetermined execution order as the target detection mode. In this way, the wafer detection mode can be determined according to actual needs, thereby improving the flexibility of the wafer detection equipment during wafer detection; and the multiple sub-detection modes include at least two sub-detection modes from multiple preset sub-detection modes and / or custom sub-detection modes, wherein the preset sub-detection mode is used to perform macro-detection on the wafer through corresponding operations, and the custom sub-detection mode is used to perform macro-detection on the wafer through custom operations set by the user. Therefore, not only can the method of performing macro-detection on the wafer be selected according to actual needs, but also the macro-detection of the wafer can be performed through custom operations set by the user. In addition, the preset sub-detection mode for performing the first type of operation can detect large-area scratches, particle contamination, pits and other defects on the front and back of the wafer. The preset sub-detection mode for performing the second type of operation can detect the different optical properties of the metal layer, oxide layer or film layer on the surface of the wafer under different colors of light. The preset sub-detection mode for performing the third type of operation can detect the wafer at different angles to meet the detection needs when the process on the wafer surface is more complex. In summary, the embodiment of the present application can realize free observation in multiple directions, multi-spectral lighting, etc., and can improve the efficiency of wafer detection and the qualified rate of wafers while facilitating observation and imaging by the human eye.

[0139] Figure 4 This is a flow chart of a wafer inspection method provided by an embodiment of the present application, which is applied to the processor in the above-mentioned wafer inspection device. Figure 4 , the method comprises the following steps: Step 401: Acquire at least one image to be tested.

[0140] In some embodiments, the at least one image to be tested can be acquired by the control method of the wafer inspection device of any embodiment of the present application.

[0141] Step 402: Inspect the wafer based on the at least one image to be tested.

[0142] For example, defect detection can be performed on the area to be tested of the wafer based on the image to be tested.

[0143] It is understandable that step 402 may be based on an existing or future detection algorithm to perform corresponding detection on the wafer based on the image to be detected.

[0144] The embodiment of the present application obtains the at least one image to be tested through the control method of the wafer detection equipment of any embodiment of the present application, and detects the wafer based on the at least one image to be tested, which can improve the flexibility and accuracy of wafer detection.

[0145] Those skilled in the art will appreciate that all or part of the functions of the various methods in the above embodiments can be implemented by hardware or by computer program. When all or part of the functions in the above embodiments are implemented by computer program, the program can be stored in a computer-readable storage medium, and the storage medium can include: read-only memory, random access memory, disk, optical disk, hard disk, etc., and the program is executed by a computer to implement the above functions. For example, the program is stored in the memory of the device, and when the program in the memory is executed by the processor, all or part of the above functions can be implemented. In addition, when all or part of the functions in the above embodiments are implemented by computer program, the program can also be stored in a storage medium such as a server, another computer, disk, optical disk, flash disk or mobile hard disk, and saved in the memory of the local device by downloading or copying, or the system of the local device is updated. When the program in the memory is executed by the processor, all or part of the functions in the above embodiments can be implemented.

[0146] The above examples are used to illustrate the present invention, which are only used to help understand the present invention and are not intended to limit the present invention. Those skilled in the art can make several simple deductions, modifications or substitutions based on the concept of the present invention.

Claims

1. A control method for wafer inspection equipment, characterized in that: The method comprises: Determining a target detection mode of the wafer detection device includes: using one sub-detection mode from a plurality of sub-detection modes as the target detection mode, or using a combination of at least two sub-detection modes from the plurality of sub-detection modes in a predetermined execution order as the target detection mode; the plurality of sub-detection modes include at least two sub-detection modes from a plurality of preset sub-detection modes and / or custom sub-detection modes; each preset sub-detection mode from the plurality of preset sub-detection modes is used to perform macroscopic inspection on the wafer through a corresponding operation, and the custom sub-detection mode is used to perform macroscopic inspection on the wafer through a custom operation set by a user; Acquire a corresponding target operation based on the target detection mode; The wafer detection device is controlled to perform posture adjustment and imaging on the wafer according to the target operation corresponding to the target detection mode, so as to obtain at least one image to be tested.

2. The control method of the wafer inspection equipment according to claim 1, wherein: If the target detection mode includes a preset sub-detection mode for performing a first type of operation, controlling the wafer detection device to perform posture adjustment and imaging on the wafer according to the target operation corresponding to the target detection mode to obtain at least one image to be tested includes: Controlling the multi-axis translation stage carrying the wafer to move so that the first surface of the wafer is in a first set posture; Controlling a brightfield light source to turn on so that the brightfield illumination light covers the first surface of the wafer, and controlling an image sensor to perform brightfield imaging on the first surface of the wafer to obtain a corresponding brightfield image to be measured; Controlling the bright field light source to be turned off while turning on the dark field light source so that the dark field illumination light covers the first surface of the wafer, and controlling the image sensor to perform dark field imaging on the first surface of the wafer to obtain a corresponding dark field image to be measured; Controlling the multi-axis translation stage carrying the wafer to move so that the second surface of the wafer is in a first set posture, and controlling the image sensor to perform dark field imaging on the second surface of the wafer to obtain a corresponding dark field image to be measured; Controlling the dark field light source to be turned off while turning on the bright field light source, and controlling the image sensor to perform bright field imaging on the second surface of the wafer to obtain a corresponding bright field image to be measured; Wherein, the first surface and the second surface of the wafer are arranged opposite to each other.

3. The control method of the wafer inspection equipment according to claim 1, wherein: If the target detection mode includes a preset sub-detection mode for performing the second type of operation, controlling the wafer detection device to perform posture adjustment and imaging on the wafer according to the target operation corresponding to the target detection mode to obtain at least one image to be tested includes: Controlling the multi-axis translation stage carrying the wafer to move so that the first surface of the wafer is in a first set posture; Controlling a brightfield light source to turn on, and sequentially switching a plurality of colors of brightfield illumination light to cover the first surface of the wafer, and controlling an image sensor to perform brightfield imaging on the first surface of the wafer under each color of brightfield illumination light, so as to obtain brightfield images to be measured of the first surface of the wafer corresponding to the plurality of colors of brightfield illumination light respectively; The multi-axis translation stage carrying the wafer is controlled to move so that the second surface of the wafer is in a first set posture, the bright field light source is controlled to sequentially switch a plurality of colors of bright field illumination light to cover the second surface of the wafer, and the image sensor is controlled to perform bright field imaging on the second surface of the wafer under each color of bright field illumination light to obtain bright field test images of the second surface of the wafer corresponding to the plurality of colors of bright field illumination light.

4. The control method of the wafer inspection equipment according to claim 1, wherein: If the target detection mode includes a preset sub-detection mode for performing a third type of operation, controlling the wafer detection device to perform posture adjustment and imaging on the wafer according to the target operation corresponding to the target detection mode to obtain at least one image to be tested includes: Controlling a multi-axis translation stage carrying the wafer to move so that the first surface of the wafer is in a first set posture, and controlling a brightfield light source to turn on so that the brightfield illumination light covers the first surface of the wafer; Controlling the multi-axis translation stage carrying the wafer to move so that the first surface of the wafer is in a plurality of different postures, so that a user can observe the first surface of the wafer from a plurality of different angles; and controlling the image sensor to perform bright field imaging on the first surface of the wafer in each posture, to obtain bright field images to be measured corresponding to the first surface of the wafer in the plurality of different postures; Controlling the bright field light source to be turned off while turning on the dark field light source, and controlling the multi-axis translation stage carrying the wafer to move so that the second surface of the wafer is in a first set posture and the dark field illumination light covers the second surface of the wafer; The multi-axis translation stage carrying the wafer is controlled to move so that the second surface of the wafer is in multiple different postures, so that the user can observe the second surface of the wafer at multiple different angles; and the image sensor is controlled to perform dark field imaging on the second surface of the wafer in each posture, so as to obtain dark field test images corresponding to the second surface of the wafer in multiple different postures.

5. The control method of the wafer inspection equipment according to claim 1, wherein: The control method further includes: In response to a click operation or a trigger signal, determining a target posture, where the target posture is used to indicate a posture that the first surface of the wafer or the second surface of the wafer needs to be in; controlling the multi-axis translation stage carrying the wafer to move so that the first surface or the second surface of the wafer is in the target posture, so that the user can observe the first surface or the second surface of the wafer; Under the target posture, the image sensor is controlled to perform bright field imaging on the first surface of the wafer or to perform dark field imaging on the second surface of the wafer.

6. The control method of the wafer inspection equipment according to claim 1, wherein: If the target detection mode includes the custom sub-detection mode for performing a custom operation, before determining the target detection mode of the wafer detection device, the control method further includes: In response to a setting operation of a user, determining a custom operation corresponding to a custom sub-inspection mode of the wafer inspection device; The controlling the wafer detection device to perform posture adjustment and imaging on the wafer according to the target operation corresponding to the target detection mode to obtain at least one image to be tested includes: Control the bright field light source, dark field light source, and multi-axis translation stage carrying the wafer of the wafer detection equipment to operate according to the custom operation corresponding to the custom sub-detection mode, and control the image sensor to perform corresponding imaging on the first surface of the wafer or the second surface of the wafer to obtain at least one image to be tested.

7. The control method of the wafer inspection equipment according to claim 1, wherein: Determining the target detection mode of the wafer detection equipment includes: In response to a user's selection operation, one sub-detection mode is selected from the plurality of sub-detection modes, or a combination of at least two of the plurality of sub-detection modes in a predetermined execution order is selected as the target detection mode.

8. The control method of the wafer inspection equipment according to claim 1, wherein: The controlling the wafer detection device to perform posture adjustment and imaging on the wafer according to the target operation corresponding to the target detection mode to obtain at least one image to be tested further includes: The target detection mode includes one or more sub-detection modes. When executing any one of the sub-detection modes included in the target detection mode, the execution starts from the initial state of the wafer detection equipment, and after the current sub-detection mode is executed, the wafer detection equipment is controlled to return to the initial state.

9. A wafer detection method, characterized in that: The method comprises: Acquire at least one image to be measured according to the method according to any one of claims 1 to 8; The wafer is inspected based on the at least one image to be inspected.

10. A high degree of freedom wafer inspection device, characterized in that: The wafer inspection equipment includes: A multi-axis translation stage includes a carrying module, a driving module, a turntable module, and an angle adjustment module. The carrying module is used to carry a wafer. The driving module includes a first driving submodule, a second driving submodule, a third driving submodule, and a fourth driving submodule. The turntable module includes a first turntable and a second turntable. The first driving submodule is used to drive the first turntable to move around a first axis. The second driving submodule is used to drive the angle adjustment module to move around a second axis. The third driving submodule is used to drive the second turntable to move around a third axis. The fourth driving submodule is used to drive the carrying module to move around a fourth axis. The first axis, the second axis, the third axis, and the fourth axis are all different. An imaging optical path component, comprising an image sensor and an optical lens; the imaging optical path component is used to perform optical imaging of the wafer carried by the carrying module through the optical lens, and transmit the optical signal obtained by imaging to the image sensor, and the image sensor is used to convert the optical signal into an electrical signal; A bright field light source assembly, used for emitting a bright field light source for illumination during bright field imaging; A dark field light source assembly, comprising at least two dark field light source modules located in different directions, for emitting dark field light sources for illumination during dark field imaging; A driving assembly, used for driving the multi-axis translation stage and the optical lens to move relative to each other; A processor, configured to execute the method according to any one of claims 1 to 9.

11. The high-freedom wafer inspection device according to claim 10, wherein: If the target detection mode includes a preset sub-detection mode for performing the first type of operation, the processor controlling the wafer detection device to perform posture adjustment and imaging on the wafer according to the target operation includes: Controlling the first driving submodule to drive the first turntable to move around the first axis, and controlling the fourth driving submodule to drive the carrying module to move around the fourth axis, so as to move the carrying module to a first position and place the first surface of the wafer carried by the carrying module in a first set posture; Controlling the brightfield light source assembly to turn on so that the brightfield illumination light covers the first surface of the wafer, and controlling the imaging optical path assembly to perform brightfield imaging on the first area to obtain a corresponding brightfield image to be measured; Controlling the bright field light source assembly to be turned off while turning on the dark field light source assembly so that the dark field illumination light covers the first surface of the wafer, and controlling the imaging optical path assembly to perform dark field imaging on the first surface of the wafer to obtain a corresponding dark field image to be measured; controlling the fourth driving submodule to drive the carrying module to move around the fourth axis to move the wafer carried by the carrying module so that the second surface of the wafer is in the first set posture, and controlling the imaging optical path component to perform dark field imaging on the second surface of the wafer to obtain a corresponding dark field image to be measured; Controlling the darkfield light source assembly to be turned off and simultaneously turning on the brightfield light source assembly to cover the second surface of the wafer with brightfield illumination light, and controlling the imaging optical path assembly to perform brightfield imaging on the second surface of the wafer to obtain a corresponding brightfield image to be measured; Wherein, the first surface and the second surface of the wafer are arranged opposite to each other; The processor controlling the wafer inspection device to return to an initial state includes: The bright field light source assembly is controlled to be turned off, the first driving submodule is controlled to drive the first turntable, and the fourth driving submodule is controlled to drive the carrying module, so that the first turntable and the carrying module return to corresponding initial positions.

12. The high-freedom wafer inspection device according to claim 10, wherein: If the target detection mode includes a preset sub-detection mode for performing the second type of operation, the processor controlling the wafer detection device to perform posture adjustment and imaging on the wafer according to the target operation includes: Controlling the first driving submodule to drive the first turntable to move around the first axis, and controlling the fourth driving submodule to drive the carrying module to move around the fourth axis, so as to move the carrying module to a first position and place the first surface of the wafer carried by the carrying module in a first set posture; Controlling the brightfield light source assembly to turn on, and sequentially switching a plurality of colors of brightfield illumination light to cover the first surface of the wafer, and controlling the imaging optical path assembly to perform brightfield imaging on the first surface of the wafer under each color of brightfield illumination light, so as to obtain brightfield images to be measured of the first surface of the wafer corresponding to the plurality of colors of brightfield illumination light respectively; Controlling the fourth driving submodule to drive the carrying module to move around the fourth axis to move the wafer carried by the carrying module so that the second surface of the wafer is in the first set posture, and controlling the bright field light source assembly to sequentially switch the multiple colors of bright field illumination light to cover the second surface of the wafer, and controlling the imaging optical path assembly to perform bright field imaging on the second surface of the wafer under each color of bright field illumination light to obtain bright field images of the second surface of the wafer corresponding to the multiple colors of bright field illumination light; The processor controlling the wafer inspection device to return to an initial state includes: The bright field light source assembly is controlled to be turned off, the first driving submodule is controlled to drive the first turntable, and the fourth driving submodule is controlled to drive the carrying module, so that the first turntable and the carrying module return to corresponding initial positions.

13. The high-freedom wafer inspection device according to claim 10, wherein: If the target detection mode includes a preset sub-detection mode for performing the third type of operation, the processor controlling the wafer detection device to perform posture adjustment and imaging on the wafer according to the target operation includes: Controlling the first driving submodule to drive the first turntable to move around the first axis, and controlling the fourth driving submodule to drive the carrying module to move around the fourth axis, so as to move the carrying module to a first position and place the first surface of the wafer carried by the carrying module in a first set posture; Controlling the bright field light source assembly to turn on so that the bright field illumination light covers the first surface of the wafer; Controlling the second driving submodule to drive the angle adjustment module to move from the first limit position of the second axis to the second limit position, while controlling the third driving submodule to drive the second turntable to move around the third axis, so that the first surface of the wafer is in a plurality of different postures, so that the user can observe the first surface of the wafer at a plurality of different angles; and controlling the imaging optical path component to perform bright field imaging on the first surface of the wafer in each posture, to obtain bright field images of the first surface of the wafer corresponding to the plurality of different postures; When the angle adjustment module reaches the second limit, the bright field light source assembly is controlled to be turned off while the dark field light source assembly is turned on, and the fourth driving submodule is controlled to drive the carrying module to move around the fourth axis, so that the second surface of the wafer is in the first set posture and the dark field illumination light covers the second surface of the wafer; controlling the second driving submodule to drive the angle adjustment module to move from the second limit position of the second axis to the first limit position, while controlling the third driving submodule to drive the second turntable to move around the third axis, so that the second surface of the wafer is in a plurality of different postures, so that a user can observe the second surface of the wafer at a plurality of different angles; and controlling the imaging optical path component to perform dark field imaging on the second surface of the wafer in each posture, to obtain dark field images of the second surface of the wafer corresponding to the plurality of different postures; The processor controlling the wafer inspection device to return to an initial state includes: Control the dark field light source assembly to turn off, control the first driving submodule to drive the first turntable, control the second driving submodule to drive the angle adjustment module, control the third driving submodule to drive the second turntable, and control the fourth driving submodule to drive the carrying module, so that the first turntable, the angle adjustment module, the second turntable, and the carrying module return to corresponding initial positions.

14. A computer-readable storage medium, characterized in that A computer program is stored on the medium, and the computer program can be executed by a processor to implement the method according to any one of claims 1 to 9.

Images