Threshold voltage correction circuit, correction method and device thereof, and display device

Abstract

The application relates to a threshold voltage correction circuit and a correction method, device and display equipment thereof. The threshold voltage correction circuit comprises a contrast unit, an analog unit and a control unit. The contrast unit comprises a first transistor. The analog unit comprises a second transistor, which is used for simulating the running state of a pull-down transistor in a gate driving circuit. The control unit is used for determining the threshold voltage difference of the first transistor and the second transistor according to the current change between the source and the drain of the first transistor and the second transistor. If the threshold voltage difference is greater than a preset voltage, the control gate driving unit signal is inserted into a black picture frame in the display process, and a target voltage is applied to the second transistor and the pull-down transistor in the gate driving circuit until the threshold voltage difference is less than or equal to the preset voltage. The problem that horizontal lines appear on the picture due to the right shift of the I-V curve of the TFT is solved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to a threshold voltage correction circuit, a threshold voltage correction method, a threshold voltage correction device and a display device. BACKGROUND

[0002] With the continuous maturity of liquid crystal display technology, liquid crystal displays have been widely used in various fields. At present, the gate driving circuit is generally made on the array substrate in the liquid crystal display, that is, the GDL (Gate Driver Less) circuit. Under the condition of high temperature and high humidity, the TFT (Thin Film Transistor) in the pull-down module of the GDL circuit is in a forward bias state for a long time, which will cause the I-V curve of the TFT in the pull-down module to shift to the right. This shift will cause the switching timing deviation of the gate driving circuit, and further cause the display abnormality such as horizontal lines on the picture.

[0003] At present, there is no effective solution to the problem of horizontal lines on the picture caused by the shift of the I-V curve of the TFT. SUMMARY

[0004] The present application provides a threshold voltage correction circuit, a threshold voltage correction method, a threshold voltage correction device and a display device to solve the technical problem of horizontal lines on the picture caused by the shift of the I-V curve of the TFT.

[0005] According to one aspect of the embodiments of the present application, the present application provides a threshold voltage correction circuit, which comprises a comparison unit, an analog unit and a control unit. The comparison unit comprises a first transistor, and the first transistor is arranged in a non-display area of a display panel. The analog unit comprises a second transistor, and the second transistor is used to simulate the running state of a pull-down transistor in a gate driving circuit, and the second transistor is arranged in the non-display area of the display panel. The control unit is connected with the comparison unit, the analog unit and the gate driving circuit respectively, and is used to monitor the current change between the source and the drain of the first transistor and the second transistor respectively, and determine the threshold voltage difference between the first transistor and the second transistor according to the current change. If the threshold voltage difference is greater than a preset voltage, the control unit controls the gate driving unit signal to insert a black picture frame in the display process, and applies a target voltage to the second transistor and the pull-down transistor in the gate driving circuit until the threshold voltage difference is less than or equal to the preset voltage.

[0006] Optionally, the gate of the first transistor is connected with the control unit, the first end of the first transistor is connected with the control unit through a first detection point, the second end of the first transistor is connected with a first signal line, and the control unit applies a high-low voltage alternating signal to the gate of the first transistor. The first signal line is used to apply a low voltage signal to the second end of the first transistor.

[0007] Optionally, the gate of the second transistor is connected with the control unit, the first end of the second transistor is connected with the control unit through the second detection point, and the high voltage signal of the gate of the second transistor is provided by the second signal line.

[0008] Optionally, the analog unit further comprises a third transistor, the first end of the third transistor is connected with the second end of the second transistor, the second end of the third transistor is connected with the control unit, and the third transistor is used to receive the target voltage applied by the control unit and transmit the target voltage to the second transistor.

[0009] Optionally, the analog unit further comprises a fourth transistor, the gate of the fourth transistor is connected with the control unit, the first end of the fourth transistor is connected with the second end of the second transistor, the second end of the fourth transistor is connected with the first signal line, and the fourth transistor is used to work when receiving the high-low voltage alternating signal applied by the control unit when the control unit does not output the target voltage.

[0010] According to another aspect of the embodiment of the present application, the present application further provides a threshold voltage correction method applied to the above-mentioned circuit, the correction method comprising: setting the first transistor and the second transistor, wherein the second transistor is used to simulate the running state of the pull-down transistor in the gate drive circuit; monitoring the current change between the source and the drain of the first transistor and the second transistor through the control unit, and determining the threshold voltage difference of the first transistor and the second transistor according to the current change; if the threshold voltage difference is greater than the preset voltage, inserting a black picture frame into the display process by controlling the gate drive unit signal, and applying a target voltage to the second transistor and the pull-down transistor in the gate drive circuit until it is detected that the threshold voltage difference is less than or equal to the preset voltage.

[0011] Optionally, the setting of the first transistor and the second transistor comprises: delivering a high-low voltage alternating signal to the gate of the first transistor, and delivering a high voltage signal to the gate of the second transistor.

[0012] Optionally, the applying of the target voltage to the second transistor and the pull-down transistor in the gate drive circuit until it is detected that the threshold voltage difference is less than or equal to the preset voltage comprises: acquiring the gate voltage of the pull-down transistor, and determining the target voltage according to the gate voltage, wherein the target voltage is greater than the gate voltage; applying the target voltage to the source of the second transistor and the target voltage to the pull-down transistor in the gate drive circuit; monitoring the change of the threshold voltage difference, and stopping the applying of the target voltage to the second transistor and the pull-down transistor when it is detected that the threshold voltage difference is less than or equal to the preset voltage.

[0013] According to another aspect of the embodiments of the present application, the present application provides a threshold voltage correction device, comprising: a first processing module, configured to set a first transistor and a second transistor, wherein the second transistor is configured to simulate an operating state of a pull-down transistor in a gate driving circuit; a monitoring module, configured to monitor current changes between source-drain electrodes of the first transistor and the second transistor through a control unit, and determine a threshold voltage difference between the first transistor and the second transistor according to the current changes; and a second processing module, configured to, if the threshold voltage difference is greater than a preset voltage, control a gate driving unit signal to insert a black picture frame in a display process, and apply a target voltage to the second transistor and the pull-down transistor in the gate driving circuit until the threshold voltage difference is detected to be less than or equal to the preset voltage.

[0014] According to another aspect of the embodiments of the present application, the present application further provides a display device comprising the threshold voltage correction circuit.

[0015] The above technical solutions provided by the embodiments of the present application have the following advantages compared with related art:

[0016] The present application provides a threshold voltage correction circuit, comprising a comparison unit, a simulation unit and a control unit; the comparison unit comprises a first transistor, which is arranged in a non-display area of a display panel; the simulation unit comprises a second transistor, which is configured to simulate an operating state of a pull-down transistor in a gate driving circuit, and the second transistor is arranged in the non-display area of the display panel; the control unit is connected with the comparison unit, the simulation unit and the gate driving circuit respectively, configured to monitor current changes between source-drain electrodes of the first transistor and the second transistor respectively, and determine a threshold voltage difference between the first transistor and the second transistor according to the current changes; if the threshold voltage difference is greater than a preset voltage, the control unit controls a gate driving unit signal to insert a black picture frame in a display process, and applies a target voltage to the second transistor and the pull-down transistor in the gate driving circuit until the threshold voltage difference is detected to be less than or equal to the preset voltage. By setting the second transistor to simulate the operating state of the pull-down transistor in the gate driving circuit, then monitoring the threshold voltage difference of the normally operating first transistor and the second transistor, determining the I-V curve right shift degree of the pull-down transistor according to the difference between the threshold voltage difference and the preset voltage, if the difference is too large, it means that the I-V curve right shift degree is too large, at this time, the target voltage is applied to the pull-down transistor to have a left shift effect on the I-V curve, solving the problem of horizontal lines in the picture caused by the I-V curve right shift of the TFT. BRIEF DESCRIPTION OF DRAWINGS

[0017] The accompanying drawings, which are incorporated herein and form part of the specification, illustrate embodiments consistent with the present application and, together with the description, further serve to explain the principles of the application.

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the related art, the following will briefly introduce the drawings needed to be used in the embodiments or the related art description. Obviously, for those of ordinary skill in the art, other drawings can also be obtained based on these drawings without any creative effort.

[0019] Figure 1 A schematic diagram of an optional threshold voltage correction circuit according to an embodiment of the present application is provided.

[0020] Figure 2 A schematic diagram of an optional display panel according to an embodiment of the present application is provided.

[0021] Figure 3 A schematic diagram of an optional application of a level signal according to an embodiment of the present application is provided.

[0022] Figure 4 A schematic diagram of another optional threshold voltage correction circuit according to an embodiment of the present application is provided.

[0023] Figure 5 A flowchart of an optional threshold voltage correction method according to an embodiment of the present application is provided.

[0024] Figure 6 A block diagram of an optional threshold voltage correction device according to an embodiment of the present application is provided. DETAILED DESCRIPTION

[0025] In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the following will combine the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without any creative effort fall within the scope of protection of the present application.

[0026] In the subsequent description, the suffixes such as "module", "component" or "unit" used to represent elements are only for the convenience of the description of the present application, and have no specific meaning. Therefore, "module" and "component" can be used interchangeably.

[0027] With the continuous maturity of liquid crystal display technology, liquid crystal displays have been widely used in various fields. At present, the gate driving circuit is generally made on the array substrate in the liquid crystal display, that is, the GDL (Gate Driver Less) circuit. Under the condition of high temperature and high humidity, the TFT (Thin Film Transistor) in the pull-down module of the GDL circuit is in a forward bias state for a long time, which can cause the I-V curve of the TFT in the pull-down module to move to the right. This right shift can cause the switching timing deviation of the gate driving circuit, and further cause the display abnormality such as horizontal lines on the picture.

[0028] To solve the problems mentioned in the background art, according to an aspect of an embodiment of the present application, a threshold voltage correction circuit is provided, as shown in Figure 1 The threshold voltage correction circuit includes a comparison unit 102, a simulation unit 104 and a control unit 106.

[0029] The comparison unit 102 includes a first transistor, which is arranged in the non-display area of the display panel.

[0030] The simulation unit 104 includes a second transistor, which is used to simulate the operating state of the pull-down transistor in the gate driving circuit, and is arranged in the non-display area of the display panel.

[0031] The control unit 106 is connected with the comparison unit 102, the simulation unit 104 and the gate driving circuit respectively, and is used to monitor the current change between the source and the drain of the first transistor and the second transistor respectively, and determine the threshold voltage difference of the first transistor and the second transistor according to the current change. If the threshold voltage difference is greater than a preset voltage, the control unit controls the gate driving unit signal to insert a black picture frame in the display process, and applies a target voltage to the second transistor and the pull-down transistor in the gate driving circuit until the threshold voltage difference is less than or equal to the preset voltage.

[0032] Specifically, the comparison unit includes the first transistor for comparison, the simulation unit includes the second transistor for simulating the operating state of the pull-down transistor in the gate driving circuit, and the control unit determines the right shift degree of the I-V curve of the pull-down transistor by monitoring the current change between the source and the drain of the first transistor and the second transistor respectively, and then determining the threshold voltage difference of the first transistor and the second transistor according to the current change. If the right shift degree is too large (i.e. the threshold voltage difference is greater than a preset voltage), a black picture frame is inserted in the display area, and a target voltage is applied to the second transistor and the pull-down transistor in the gate driving circuit to adjust the influence of the continuous high voltage on the pull-down transistor.

[0033] In order to avoid affecting the visual effect of the display picture, the two transistors are arranged in the non-display area of the display panel, which refers to the part of the panel not used for actual display of images, and is usually used for placing driving circuits and auxiliary elements.

[0034] The target voltage applied to the pull-down transistor in the gate drive circuit is used to adjust the right shift degree of the characteristic curve of the pull-down transistor, and the target voltage applied to the second transistor is used to ensure that the second transistor can synchronize the operating state of the pull-down transistor.

[0035] Specifically, the target voltage can be set according to the gate voltage of the pull-down transistor, and the target voltage is greater than the gate voltage of the pull-down transistor.

[0036] The target voltage applied to the pull-down transistor in the gate drive circuit can make the entire pull-down transistor in a reverse negative voltage stress state, which has a left shift effect on the I-V curve of the pull-down transistor, thereby offsetting the right shift effect of the forward bias voltage stress.

[0037] Figure 2 A schematic diagram of the display panel provided in the present application is shown in the figure, in which an analog unit and a comparison unit are arranged in the non-display area of the display panel. The comparison unit includes a transistor in a normal operating state, and the analog unit includes a transistor used to simulate the operating state of the pull-down transistor in the gate drive circuit. The control unit is also arranged in the non-display area (not shown in the figure).

[0038] The present application sets the first transistor in a normal operating state as a comparison group, sets the second transistor to simulate the operating state of the pull-down transistor in the gate drive circuit, then monitors the threshold voltage difference between the first transistor in a normal operating state and the second transistor, determines the right shift degree of the I-V curve of the pull-down transistor according to the difference between the threshold voltage difference and a preset voltage, and if the difference is too large, it indicates that the right shift degree of the I-V curve is too large. At this time, a target voltage greater than the gate voltage of the pull-down transistor is applied to the pull-down transistor to have a left shift effect on the I-V curve, thereby adjusting the right shift degree of the I-V curve and avoiding the appearance of horizontal lines in the display picture due to the excessive right shift degree.

[0039] As an optional embodiment, the gate of the first transistor is connected with the control unit, the first end of the first transistor is connected with the control unit through the first detection point, the second end of the first transistor is connected with the first signal line, and the control unit applies a high-low voltage alternating signal to the gate of the first transistor. The first signal line is used to apply a low voltage signal to the second end of the first transistor.

[0040] The first end of the first transistor is connected with the control unit through the first detection point, and the control unit can monitor the current change between the source and the drain of the first transistor according to the first detection point.

[0041] The first signal line applies a low voltage signal to the second terminal of the first transistor, which can be used to simulate the driving signal of the display panel in actual operation, helping the transistor to better adapt to the working conditions of the display panel.

[0042] As an optional embodiment, the gate of the second transistor is connected with the control unit, the first terminal of the second transistor is connected with the control unit through the second detection point, and the high voltage signal of the gate of the second transistor is provided by the second signal line.

[0043] The second signal line (i.e. VGH (Gate High Voltage) signal line) on the display panel applies a high voltage signal to the gate of the second transistor.

[0044] Figure 3 The application of the level signal is schematically shown in the figure, V1 is the level signal applied to the first transistor, the signal level of V1 is alternately high and low, V2 is the level signal applied to the second transistor, and the signal level of V2 is continuously high (or at least 99% or more of the time is high).

[0045] As an optional embodiment, the simulation unit further comprises a third transistor, the first terminal of the third transistor is connected with the second terminal of the second transistor, the second terminal of the third transistor is connected with the control unit, and the third transistor is used to receive the target voltage applied by the control unit and transmit the target voltage to the second transistor.

[0046] The first terminal of the third transistor is the output terminal, and the second terminal is the input terminal.

[0047] The third transistor functions to output the target voltage applied by the control unit to the second transistor, and can synchronize the pressure signal received by the pull-down transistor to the second transistor.

[0048] As an optional embodiment, the simulation unit further comprises a fourth transistor, the gate of the fourth transistor is connected with the control unit, the first terminal of the fourth transistor is connected with the second terminal of the second transistor, the second terminal of the fourth transistor is connected with the first signal line, and the fourth transistor is used to work when receiving the high-low alternating signal applied by the control unit when the control unit does not output the target voltage.

[0049] The second terminal of the fourth transistor is connected with the first signal line VGL (Gate Low Voltage) on the display panel, and when the control unit outputs the target voltage, the gate signal line of the fourth transistor switches to a low voltage signal, the signal input of the fourth transistor is cut off, and the second transistor will only receive the target voltage from the control unit.

[0050] Figure 4Another schematic diagram of the threshold voltage correction circuit provided by the present application is shown in the figure. The comparison unit is connected to the control unit through IC detection point 1 (i.e. the first detection point). The comparison unit comprises T1 (i.e. the first transistor). The gate of T1 receives V1 signal (alternating between high and low levels). The source of T1 receives the low voltage signal VGL provided by the panel. The drain of T1 is connected to IC detection point 1. The simulation unit is connected to the control unit through IC detection point 2 (i.e. the second detection point). The simulation unit comprises T2 (i.e. the second transistor), T3 (i.e. the third transistor) and T4 (i.e. the fourth transistor). The gate of T2 receives V2 signal (continuous high level). The source of T2 is connected to T3 and T4 respectively. The drain of T2 is connected to IC detection point 2. The gate and source of T3 are connected to the control unit to receive V3 signal (target voltage) provided by the control unit. The gate of T4 is used to receive the signal provided by the control unit. The control unit is also connected to the pull-down transistor of the gate drive circuit to apply the target voltage to the pull-down transistor.

[0051] The threshold voltage correction circuit provided by the present application comprises a comparison unit, a simulation unit and a control unit. The comparison unit comprises a first transistor which is arranged in the non-display area of the display panel. The simulation unit comprises a second transistor which is used to simulate the running state of the pull-down transistor in the gate drive circuit and is arranged in the non-display area of the display panel. The control unit is connected to the comparison unit, the simulation unit and the gate drive circuit respectively to monitor the current change between the source and the drain of the first transistor and the second transistor respectively and determine the threshold voltage difference of the first transistor and the second transistor according to the current change. If the threshold voltage difference is greater than the preset voltage, the control unit controls the gate drive unit signal to insert a black picture frame during the display process and applies the target voltage to the second transistor and the pull-down transistor in the gate drive circuit until the threshold voltage difference is less than or equal to the preset voltage. By arranging the second transistor to simulate the running state of the pull-down transistor in the gate drive circuit, the threshold voltage difference of the normally running first transistor and the second transistor is monitored, the difference between the threshold voltage difference and the preset voltage is determined to determine the right shift degree of the I-V curve of the pull-down transistor, and if the difference is too large, the target voltage is applied to the pull-down transistor to have a left shift effect on the I-V curve, thereby solving the problem of horizontal lines in the picture caused by the right shift of the I-V curve of the TFT.

[0052] According to another aspect of the embodiments of the present application, the present application further provides a threshold voltage correction method applied to the above-mentioned correction circuit. As shown in the figure, the correction method comprises the following steps. Figure 5

[0053] In step 501, a first transistor and a second transistor are arranged. The second transistor is used to simulate the running state of the pull-down transistor in the gate drive circuit.​

[0054] In step 503, the control unit monitors the current change between the source and the drain of the first transistor and the second transistor respectively, and determines the threshold voltage difference of the first transistor and the second transistor according to the current change;

[0055] In step 505, if the threshold voltage difference is greater than the preset voltage, the control gate driving unit signal is inserted into a black picture frame during the display process, and a target voltage is applied to the second transistor and the pull-down transistor in the gate driving circuit until the threshold voltage difference is detected to be less than or equal to the preset voltage.

[0056] The first transistor is a reference transistor in a normal operating state, which reflects the ideal working state of the gate driving circuit, and the second transistor is a transistor for simulating the working state of the pull-down transistor in the gate driving circuit.

[0057] The current change between the source and the drain of the first transistor and the second transistor is monitored, and the threshold voltage difference of the first transistor and the second transistor is calculated, so as to determine whether the pull-down transistor in the gate driving circuit has the right shift of the I-V curve.

[0058] As an optional embodiment, the first transistor and the second transistor are provided, including: supplying a high-low voltage alternating signal to the gate of the first transistor, and supplying a high voltage signal to the gate of the second transistor.

[0059] Specifically, the working state of the actual display panel is simulated by applying a high-low voltage alternating signal to the gate. Such an alternating signal means that the gate voltage thereof will switch between high voltage and low voltage to simulate the switching state of the TFT transistor.

[0060] Specifically, a high voltage signal is continuously applied to the gate of the second transistor in order to test the working state of the pull-down transistor.

[0061] By allowing the two transistors to be in different operating states (one normally works and the other simulates the function of the pull-down transistor), the current and voltage differences can be compared to identify abnormal conditions of the pull-down transistor.

[0062] As an optional embodiment, the target voltage is applied to the second transistor and the pull-down transistor in the gate driving circuit until the threshold voltage difference is detected to be less than or equal to the preset voltage, including: obtaining the gate voltage of the pull-down transistor, and determining the target voltage according to the gate voltage, wherein the target voltage is greater than the gate voltage; applying the target voltage to the source of the second transistor and the pull-down transistor in the gate driving circuit; monitoring the change of the threshold voltage difference, and stopping applying the target voltage to the second transistor and the pull-down transistor when the threshold voltage difference is detected to be less than or equal to the preset voltage.

[0063] The target voltage applied to the pull-down transistor in the gate drive circuit is used to adjust the right shift degree of the characteristic curve of the pull-down transistor, and the target voltage applied to the second transistor is used to ensure that the second transistor can synchronize the operating state of the pull-down transistor.

[0064] Specifically, the target voltage can be set according to the gate voltage of the pull-down transistor, and the target voltage is greater than the gate voltage of the pull-down transistor.

[0065] The target voltage applied to the pull-down transistor in the gate drive circuit can make the entire pull-down transistor in a reverse negative voltage stress state, which has a left shift effect on the I-V curve of the pull-down transistor, thereby offsetting the right shift effect caused by the forward bias voltage stress.

[0066] The threshold voltage correction method provided by the present application is applied to the above-mentioned circuit, and the correction method comprises the following steps: a first transistor and a second transistor are set, wherein the second transistor is used to simulate the operating state of a pull-down transistor in a gate drive circuit; a control unit is used to monitor the current change between the source and the drain of the first transistor and the second transistor respectively, and the threshold voltage difference of the first transistor and the second transistor is determined according to the current change; if the threshold voltage difference is greater than a preset voltage, the gate drive unit signal is inserted into a black picture frame during the display process, and a target voltage is applied to the second transistor and the pull-down transistor in the gate drive circuit until it is detected that the threshold voltage difference is less than or equal to the preset voltage. The threshold voltage difference of the first transistor and the second transistor in normal operation is monitored by setting the second transistor to simulate the operating state of the pull-down transistor in the gate drive circuit, and the right shift degree of the I-V curve of the pull-down transistor is determined according to the difference between the threshold voltage difference and the preset voltage. If the difference is too large, it indicates that the right shift degree of the I-V curve is too large, and the target voltage is applied to the pull-down transistor to have a left shift effect on the I-V curve, thereby solving the problem of horizontal lines in the picture caused by the right shift of the I-V curve of the TFT.

[0067] According to another aspect of the embodiments of the present application, the present application provides a threshold voltage correction device, as shown in Figure 6 The threshold voltage correction device comprises:

[0068] The first processing module 602 is used to set a first transistor and a second transistor, wherein the second transistor is used to simulate the operating state of a pull-down transistor in a gate drive circuit.

[0069] The monitoring module 604 is used to monitor the current change between the source and the drain of the first transistor and the second transistor respectively through a control unit, and determine the threshold voltage difference of the first transistor and the second transistor according to the current change.

[0070] The second processing module 606 is configured to, if the threshold voltage difference is greater than the preset voltage, control the gate driving unit signal to insert a black picture frame in a display process, and apply a target voltage to the second transistor and a pull-down transistor in the gate driving circuit until the threshold voltage difference is detected to be less than or equal to the preset voltage.

[0071] It should be noted that the first processing module 602 in this embodiment can be configured to perform step 501 in the embodiments of the present application, the monitoring module 604 in this embodiment can be configured to perform step 503 in the embodiments of the present application, and the second processing module 606 in this embodiment can be configured to perform step 505 in the embodiments of the present application.

[0072] Optionally, the first processing module 602 is specifically configured to deliver a signal with high and low voltages alternately to the gate of the first transistor, and deliver a high voltage signal to the gate of the second transistor.

[0073] Optionally, the second processing module 606 is specifically configured to acquire a gate voltage of the pull-down transistor, and determine a target voltage according to the gate voltage, where the target voltage is greater than the gate voltage; apply the target voltage to the source of the second transistor and to the pull-down transistor in the gate driving circuit; monitor a change in the threshold voltage difference, and stop applying the target voltage to the second transistor and the pull-down transistor when the threshold voltage difference is detected to be less than or equal to a preset voltage.

[0074] It should be noted that the above modules and corresponding steps achieve the same examples and application scenarios, but are not limited to the contents disclosed in the above embodiments.

[0075] According to another aspect of the embodiments of the present application, the present application provides a display device including the above threshold voltage correction circuit.

[0076] According to still another aspect of the embodiments of the present application, a computer readable medium having non-volatile program code executable by a processor is further provided.

[0077] Optionally, specific examples in the present embodiment can refer to the examples described in the above embodiments, which will not be described herein again.

[0078] The embodiments of the present application can refer to the above various embodiments in the specific implementation, and have corresponding technical effects.

[0079] It is understood that the embodiments described herein can be implemented in hardware, software, firmware, middleware, microcode, or any combination thereof. For a hardware implementation, the processing units can be implemented within one or more application specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSP Devices), programmable logic devices (PLDs), field programmable gate arrays (FPGAs), processors, controllers, micro-controllers, microprocessors, other electronic units designed to perform the functions described herein, or a combination thereof.

[0080] For a software implementation, the techniques described herein can be implemented with modules (e.g., procedures, functions, and so on) that perform the functions described herein. The software codes can be stored in memory units and executed by processors. The memory unit can be implemented within the processor or external to the processor.

[0081] It is understood that the units and algorithms described in connection with the examples disclosed herein can be embodied in electronic hardware, or a combination of computer software and electronic hardware. The

[0082] It is understood that by implementing the system, device and unit described above in the embodiments of the present application, the specific working process of the system, device and unit can be referred to the corresponding process in the foregoing method embodiments, which will not be described here.

[0083] In the embodiments provided by the present application, it should be understood that the disclosed device and method can be implemented in other ways. For example, the device embodiments described above are only schematic. The division of the modules is only a logical function division. There can be another division for actual implementation. For example, a plurality of modules or components can be combined or integrated into another system, or some features can be ignored or not executed. In addition, the displayed or discussed mutual couplings or direct couplings or communication connections between different modules can be indirect couplings or communication connections through some interfaces, devices or units, and can be electrical, mechanical or in other forms.

[0084] The units described as separate components may or may not be physically separate, and the components displayed as units may or may not be physical units, i.e. may be located in one place, or may be distributed on multiple network units. Part or all of the units can be selected according to actual needs to achieve the purpose of the embodiment scheme.

[0085] In addition, the functional units in each embodiment of the present application can be integrated in one processing unit, or each unit can be physically present separately, or two or more units can be integrated in one unit.

[0086] If the functions are realized in the form of software functional units and sold or used as independent products, they can be stored in a computer readable storage medium. Based on this understanding, the technical solutions of the embodiments of the present application can be embodied in the form of software products, and the computer software products are stored in a storage medium, including a plurality of instructions for causing a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods described in the embodiments of the present application. The aforementioned storage medium includes: U disk, mobile hard disk, ROM, RAM, magnetic disk or optical disk, and various program codes that can be stored in the medium. It should be noted that in this paper, terms such as "first" and "second" are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between the entities or operations. Moreover, the terms "include", "contain" or any other variants thereof are intended to cover non-exclusive inclusion, so that the processes, methods, articles or devices including a series of elements not only include those elements, but also include other elements not explicitly listed, or include elements inherent to such processes, methods, articles or devices. Without more limitations, the elements defined by the statement "including a" do not exclude the presence of other identical elements in the process, method, article or device including the elements.

[0087] The above is only a specific embodiment of the present application, which enables those skilled in the art to understand or implement the present application. Various modifications of these embodiments will be apparent to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to these embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features applied herein.

Claims

1. A threshold voltage correction circuit, characterized by, The control unit, the simulation unit and the control unit are connected with the gate driving circuit respectively, and the control unit is used for monitoring the current change between the source and the drain of the first transistor and the second transistor respectively, and determining the threshold voltage difference of the first transistor and the second transistor according to the current change. If the threshold voltage difference is greater than a preset voltage, the control unit controls the gate driving unit signal to insert a black picture frame in the display process, and applies a target voltage to the second transistor and the pull-down transistor in the gate driving circuit until the threshold voltage difference is detected to be less than or equal to the preset voltage. The gate of the first transistor is connected with the control unit, the first end of the first transistor is connected with the control unit through a first detection point, the second end of the first transistor is connected with a first signal line, and the control unit applies a high-low voltage alternating signal to the gate of the first transistor. The gate of the second transistor is connected with the control unit, the first end of the second transistor is connected with the control unit through a second detection point, and the high voltage signal of the gate of the second transistor is provided by a second signal line. The simulation unit further comprises a third transistor, the first end of the third transistor is connected with the second end of the second transistor, the second end of the third transistor is connected with the control unit, and the third transistor is used for receiving the target voltage applied by the control unit and transmitting the target voltage to the second transistor.

2. The circuit of claim 1, wherein, The simulation unit further comprises a fourth transistor, the gate of the fourth transistor is connected with the control unit, the first end of the fourth transistor is connected with the second end of the second transistor, the second end of the fourth transistor is connected with a first signal line, and the fourth transistor is used for working when receiving the high-low voltage alternating signal applied by the control unit when the control unit does not output the target voltage.

3. The circuit of claim 1, wherein, The correction method applied to the correction circuit of any one of claims 1 to 5 comprises:

4. The circuit of claim 3, wherein, setting a first transistor and a second transistor, wherein the second transistor is used for simulating the running state of a pull-down transistor in a gate driving circuit; 5. The circuit of claim 3, wherein, monitoring the current change between the source and the drain of the first transistor and the second transistor by a control unit respectively, and determining the threshold voltage difference of the first transistor and the second transistor according to the current change; 6. A method of correcting threshold voltage, characterized by, if the threshold voltage difference is greater than a preset voltage, the control unit controls the gate driving unit signal to insert a black picture frame in the display process, and applies a target voltage to the second transistor and the pull-down transistor in the gate driving circuit until the threshold voltage difference is detected to be less than or equal to the preset voltage. ​ ​ ​ 7. The method of claim 6, wherein, The first transistor and the second transistor are set, including: A signal of high and low pressure alternately is transported to the gate of the first transistor, and a high pressure signal is transported to the gate of the second transistor.

8. The method of claim 6, wherein, The target voltage is applied to the second transistor and the pull-down transistor in the gate drive circuit until the threshold voltage difference is detected to be less than or equal to the preset voltage, including: The gate voltage of the pull-down transistor is acquired, and the target voltage is determined according to the gate voltage, wherein the target voltage is greater than the gate voltage; The target voltage is applied to the source of the second transistor and the pull-down transistor in the gate drive circuit; The change of the threshold voltage difference is monitored, and when the threshold voltage difference is detected to be less than or equal to the preset voltage, the application of the target voltage to the second transistor and the pull-down transistor is stopped.

9. A threshold voltage correction device, characterized by, Including: The first processing module is used for setting the first transistor and the second transistor, wherein the second transistor is used for simulating the running state of the pull-down transistor in the gate drive circuit; The monitoring module is used for monitoring the current change between the source and the drain of the first transistor and the second transistor through the control unit, and determining the threshold voltage difference of the first transistor and the second transistor according to the current change; The second processing module is used for controlling the gate drive unit signal to insert a black picture frame in the display process if the threshold voltage difference is greater than the preset voltage, and applying the target voltage to the second transistor and the pull-down transistor in the gate drive circuit until the threshold voltage difference is detected to be less than or equal to the preset voltage.

10. A display device, characterized by comprising: The threshold voltage correction circuit includes any one of claims 1 to 5.

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