Light-emitting panel, manufacturing method of light-emitting panel and display device

Abstract

The invention discloses a light-emitting panel, a manufacturing method of the light-emitting panel and a display device. The light-emitting panel comprises a driving substrate, a chip unit and a color conversion layer, and the chip unit is arranged on the driving substrate; the color conversion layer is arranged on the side, away from the driving substrate, of the chip unit. The chip unit comprises a substrate and an N-type semiconductor, and the substrate and the driving substrate are oppositely arranged at an interval; the N-type semiconductor is located on the side, facing the driving substrate, of the substrate, the side, away from the substrate, of the N-type semiconductor is provided with a first area and a plurality of second areas which are arranged at intervals, the second areas are arranged at intervals, each second area is provided with a light-emitting unit, and the first area is provided with an N-type electrode; the light-emitting units and the color conversion layers are correspondingly arranged, and each light-emitting unit comprises a light-emitting layer, a P-type semiconductor and a P-type electrode which are arranged in a stacked mode in the direction from the N-type semiconductor to the driving substrate. Therefore, each light-emitting unit can be independently turned on or turned off, and the flexibility of the light-emitting panel is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a light-emitting panel, a method for manufacturing a light-emitting panel, and a display device. Background Art

[0002] With the development of display technology, miniature light-emitting diodes (MiniLED) and MicroLED display devices have begun to be used, which usually require the use of light-emitting chips to control the light-emitting mode of the corresponding light-emitting areas.

[0003] Currently, a single light-emitting chip can only illuminate a relatively single light-emitting area, with low luminous efficiency. In addition, it is difficult to control multiple different light-emitting areas through a single light-emitting chip, resulting in poor flexibility of the light-emitting chip. Summary of the Invention

[0004] The main purpose of this application is to provide a light-emitting panel, a method for manufacturing a light-emitting panel, and a display device, aiming to solve the above-mentioned technical problems existing in the prior art.

[0005] To solve the above problems, the present application provides a light-emitting panel, which includes a driving substrate, a chip unit and a color conversion layer, the chip unit is arranged on the driving substrate and electrically connected to the driving substrate; the color conversion layer is arranged on the side of the chip unit away from the driving substrate; wherein, the chip unit includes a base substrate and an N-type semiconductor, and the base substrate and the driving substrate are arranged relative to each other; the N-type semiconductor is located on the side of the base substrate facing the driving substrate, and the side of the N-type semiconductor away from the base substrate has a first area and multiple second areas arranged at intervals, and the multiple second areas are arranged at intervals with each other, each second area is provided with a light-emitting unit, and the first area is provided with an N-type electrode; wherein, the light-emitting unit is arranged corresponding to the color conversion layer, and each light-emitting unit includes a light-emitting layer, a P-type semiconductor and a P-type electrode stacked in the direction from the N-type semiconductor to the driving substrate, and the P-type electrode is used to cooperate with the N-type electrode to light up the light-emitting layer.

[0006] In some embodiments, the color conversion layer includes a plurality of sub-color conversion layers that are arranged at intervals, and one sub-color conversion layer is arranged corresponding to one light-emitting unit.

[0007] In some embodiments, the color of each sub-color conversion layer is any one of red, green, and blue.

[0008] In some embodiments, the plurality of second regions are sequentially arranged in a first direction parallel to the base substrate, and the first region is located on one side of the second region in a second direction perpendicular to the first direction.

[0009] In some embodiments, the plurality of second regions are sequentially arranged around the first region.

[0010] In some embodiments, the chip unit further includes an insulating layer, wherein the insulating layer is filled between the first region and the second region, and is filled between the plurality of second regions.

[0011] In some embodiments, the light emitting panel further includes an encapsulation layer, which is disposed on a side of the driving substrate facing the chip unit and covers the chip unit and the color conversion layer.

[0012] To solve the above problems, the present application provides a method for manufacturing a light-emitting panel, which is used to manufacture the above-mentioned light-emitting panel, and the method includes: providing a driving substrate and a chip unit, the chip unit including a base substrate and an N-type semiconductor arranged on the base substrate, the side of the N-type semiconductor facing away from the base substrate having a first region and multiple second regions spaced apart, the multiple second regions being spaced apart from each other, each second region being provided with a light-emitting unit, the first region being provided with an N-type electrode, each light-emitting unit including a light-emitting layer, a P-type semiconductor and a P-type electrode stacked in the direction from the N-type semiconductor to the driving substrate; transferring the chip unit to the driving substrate by a transfer device, and forming a color conversion layer on the side of the base substrate facing away from the N-type semiconductor by the transfer device, wherein, when the chip unit is moved to the driving substrate, the base substrate is farther away from the driving substrate than the P-type electrode.

[0013] In some embodiments, the steps of providing a driving substrate and a chip unit include: providing a base substrate and an N-type semiconductor, a light-emitting layer, and a P-type semiconductor stacked in sequence on the base substrate; removing part of the light-emitting layer and part of the P-type semiconductor to form a first region and multiple second regions spaced apart on the N-type semiconductor, and the multiple second regions are spaced apart from each other; forming a P-type electrode on a side of the P-type semiconductor in each second region facing away from the light-emitting layer to form a light-emitting unit in the second region, and forming an N-type electrode on a side of the N-type semiconductor in the first region facing away from the base substrate to form a chip unit.

[0014] In order to solve the above problems, the present application provides a display device, which includes the above-mentioned light-emitting panel.

[0015] Compared with the prior art, the light-emitting panel of the present application includes a driving substrate, a chip unit and a color conversion layer, the chip unit is arranged on the driving substrate and electrically connected to the driving substrate; the color conversion layer is arranged on the side of the chip unit away from the driving substrate; wherein, the chip unit includes a base substrate and an N-type semiconductor, and the base substrate and the driving substrate are arranged relative to each other; the N-type semiconductor is located on the side of the base substrate facing the driving substrate, and the side of the N-type semiconductor away from the base substrate has a first area and multiple second areas arranged at intervals, and the multiple second areas are arranged at intervals with each other, each second area is provided with a light-emitting unit, and the first area is provided with an N-type electrode; wherein, the light-emitting unit is arranged corresponding to the color conversion layer, and each light-emitting unit includes a light-emitting layer, a P-type semiconductor and a P-type electrode stacked in the direction from the N-type semiconductor to the driving substrate, and the P-type electrode is used to cooperate with the N-type electrode to light up the light-emitting layer. Through the above-mentioned embodiment, the light-emitting units in the plurality of second regions are spaced apart from each other and can share the N-type semiconductor and the N-type electrode in the first region, so that each light-emitting unit can cooperate with the N-type semiconductor and the N-type electrode through its own P-type electrode and P-type semiconductor, so that each light-emitting unit can independently light up or extinguish the light-emitting layer corresponding to it, thereby increasing the light-emitting area that can be independently controlled by the chip unit, and improving the light-emitting efficiency and display flexibility of the light-emitting panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0017] Figure 1 is a schematic structural diagram of a display device according to one or more embodiments of the present application;

[0018] Figure 2 is a schematic structural diagram of a light-emitting panel according to one or more embodiments of the present application;

[0019] Figure 3 is a first structural schematic diagram of a chip unit of a light-emitting panel according to one or more embodiments of the present application;

[0020] Figure 4 is based on Figure 3 Another perspective diagram of the chip unit shown;

[0021] Figure 5 is a second structural schematic diagram of a chip unit of a light-emitting panel according to one or more embodiments of the present application;

[0022] Figure 6This is a schematic flow chart of an embodiment of a method for manufacturing a light-emitting panel provided in the present application;

[0023] Figure 7 This is a schematic diagram of the first process of the method for manufacturing a light-emitting panel provided by the present application;

[0024] Figure 8 This is a schematic diagram of the second process of the method for manufacturing the light-emitting panel provided by the present application;

[0025] Figure 9 This is a schematic diagram of the third process of the method for manufacturing a light-emitting panel provided by the present application;

[0026] Figure 10 This is a schematic diagram of the fourth process of the method for manufacturing a light-emitting panel provided by the present application;

[0027] Figure 11 This is a schematic diagram of the fifth process of the method for manufacturing a light-emitting panel provided by this application;

[0028] Figure 12 This is a schematic diagram of the sixth process of the method for manufacturing a light-emitting panel provided by this application;

[0029] Figure 13 is based on Figure 12 Another perspective diagram of the light-emitting panel shown;

[0030] Figure 14 This is a schematic diagram of the seventh process of the method for manufacturing a light-emitting panel provided by this application;

[0031] Figure 15 is based on Figure 14 Another perspective diagram of the light-emitting panel shown;

[0032] Figure 16 This is a schematic diagram of the eighth process of the method for manufacturing a light-emitting panel provided by the present application;

[0033] Figure 17 This is a schematic diagram of the ninth process of the method for manufacturing a light-emitting panel provided by the present application;

[0034] Figure 18 This is a schematic diagram of the tenth process of the method for manufacturing a light-emitting panel provided by the present application;

[0035] Figure 19 is based on Figure 17 Another perspective diagram of the light-emitting panel shown;

[0036] Figure 20 This is a schematic diagram of the eleventh process of the method for manufacturing the light-emitting panel provided by the present application;

[0037] Figure 21 is based on Figure 20Another perspective diagram of the light-emitting panel shown;

[0038] Figure 22 This is a schematic diagram of the twelfth process of the method for manufacturing the light-emitting panel provided by the present application;

[0039] Figure 23 is based on Figure 22 Another perspective diagram of the light-emitting panel shown;

[0040] Figure 24 This is a schematic diagram of the thirteenth process of the method for manufacturing the light-emitting panel provided by the present application;

[0041] Figure 25 This is a schematic diagram of the fourteenth process of the method for manufacturing the light-emitting panel provided in this application.

[0042] Figure numerals: display device 1; light-emitting panel 2; transfer device 3; receiving groove 300; deformation portion 310; nozzle 320; temporary substrate 4; drive substrate 10; drive electrode 11; chip unit 20; base substrate 21; N-type semiconductor 22; first region 221; second region 222; light-emitting unit 23; light-emitting layer 231; P-type semiconductor 232; P-type electrode 233; N-type electrode 24; insulating layer 25; color conversion layer 30; sub-color conversion layer 31; encapsulation layer 40; photoresist 50; metal layer 60; insulating portion 70; first direction x1; second direction x2. DETAILED DESCRIPTION

[0043] The following embodiments of the technical solution of the present application will be described in detail with reference to the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solution of the present application and are therefore only examples and are not intended to limit the scope of protection of the present application.

[0044] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this application belongs; the terms used herein are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" and any variations thereof in the specification and claims of this application and the above-mentioned figure descriptions are intended to cover non-exclusive inclusions.

[0045] In the description of the embodiments of this application, the technical terms "first" and "second" are used only to distinguish different objects and should not be understood to indicate or imply relative importance or implicitly specify the quantity, specific order, or primary and secondary relationship of the indicated technical features. In the description of the embodiments of this application, the meaning of "plurality" is more than two, unless otherwise clearly and specifically defined.

[0046] References herein to "embodiments" mean that a particular feature, structure, or characteristic described in connection with the embodiments may be included in at least one embodiment of the present application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor does it constitute an independent or alternative embodiment that is mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0047] In the description of the embodiments of this application, the term "and / or" is simply a description of the association relationship between associated objects, indicating that three relationships can exist. For example, A and / or B can represent the following three situations: A exists alone, A and B exist simultaneously, and B exists alone. In addition, the character " / " in this document generally indicates that the associated objects are in an "or" relationship.

[0048] In the description of the embodiments of the present application, the term "multiple" refers to more than two (including two). Similarly, "multiple groups" refers to more than two groups (including two groups), and "multiple pieces" refers to more than two pieces (including two pieces).

[0049] In the description of the embodiments of the present application, the technical terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the embodiments of the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the embodiments of the present application.

[0050] In the description of the embodiments of the present application, unless otherwise expressly specified or limited, technical terms such as "installed," "connected," "connected," and "fixed" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integration; mechanical connections or electrical connections; direct connections or indirect connections through an intermediate medium; internal connections between two components or interactions between two components. Those skilled in the art can understand the specific meanings of the above terms in the embodiments of the present application based on specific circumstances.

[0051] With the development of display technology, miniature light-emitting diodes (MiniLED) and MicroLED display devices have begun to be used, which usually require the use of light-emitting chips to control the light-emitting mode of the corresponding light-emitting areas.

[0052] Currently, a single light-emitting chip can only illuminate a relatively single light-emitting area, with low luminous efficiency. In addition, it is difficult to control multiple different light-emitting areas through a single light-emitting chip, resulting in poor flexibility of the light-emitting chip.

[0053] The present application provides a display device, which may include but is not limited to mobile phones, tablets, laptops, televisions, desktops, terminals, interactive displays, digital audio and video equipment, Internet of Things devices, and the like. Interactive displays may include interactive whiteboards, interactive digital advertising screens, and interactive game displays, and the like. Internet of Things devices may include smart home devices and smart wearable devices, and the like. The display device may include a light-emitting panel, which may illuminate a display interface to implement corresponding functions.

[0054] Please refer to Figure 1 , Figure 1 is a schematic structural diagram of a display device according to one or more embodiments of the present application.

[0055] Display device 1 can be a regular mobile phone, a feature phone, or a smartphone. The smartphone can be a flat-screen phone, a curved-screen phone, or a foldable phone, among others. Display device 1 is provided with a light-emitting panel 2, which can be located at the top, middle, or rear of display device 1. Light-emitting panel 2 can be used to illuminate the display area of ​​display device 1. For example, light-emitting panel 2 can illuminate the portion of display device 1 displaying visual information. Display device 1 can also include an outer housing, in which light-emitting panel 2 is mounted. The outer housing protects light-emitting panel 2 and reduces the risk of damage to light-emitting panel 2 from external forces.

[0056] In order to solve the technical problems existing in the related art, this application provides a light-emitting panel, see Figure 2-Figure 4 , Figure 2 is a schematic structural diagram of a light-emitting panel according to one or more embodiments of the present application; Figure 3 is a first structural schematic diagram of a chip unit of a light-emitting panel according to one or more embodiments of the present application; Figure 4 is based on Figure 3 A schematic diagram of the chip unit from another perspective is shown.

[0057] The light emitting panel 2 includes a driving substrate 10, a chip unit 20 and a color conversion layer 30. The chip unit 20 is arranged on the driving substrate 10 and is electrically connected to the driving substrate 10. The color conversion layer 30 is arranged on the side of the chip unit 20 away from the driving substrate 10. The chip unit 20 includes a base substrate 21 and an N-type semiconductor 22. The base substrate 21 is arranged relative to the driving substrate 10 and spaced apart. The N-type semiconductor 22 is located on the side of the base substrate 21 facing the driving substrate 10, and the side of the N-type semiconductor 22 away from the base substrate 21 has a gap. A first region 221 and multiple second regions 222 are arranged at intervals, and the multiple second regions 222 are arranged at intervals from each other. Each second region 222 is provided with a light-emitting unit 23, and the first region 221 is provided with an N-type electrode 24; wherein the light-emitting unit 23 is arranged corresponding to the color conversion layer 30, and each light-emitting unit 23 includes a light-emitting layer 231, a P-type semiconductor 232 and a P-type electrode 233 stacked in the direction from the N-type semiconductor 22 to the driving substrate 10, and the P-type electrode is used to cooperate with the N-type electrode 24 to light up the light-emitting layer 231.

[0058] The driver substrate 10 is electrically connected to the chip unit 20, thereby driving the chip unit 20 to emit light. For example, the driver substrate 10 is provided with a driver electrode 11, which can be electrically connected to the N-type electrode 24 and the P-type electrode 233 of the chip unit 20, thereby driving the chip unit 20 to emit light. There can be multiple chip units 20, and multiple chip units 20 can be spaced apart on the driver substrate 10. The material of the base substrate 21 can include, but is not limited to, sapphire, silicon-based, or silicon carbide. The base substrate 21 provides fixation and support for the N-type semiconductor 22, the light-emitting unit 23, and the N-type electrode 24. The side of the N-type semiconductor 22 facing away from the base substrate 21 has a first region 221 and multiple second regions 222. Specifically, the first region 221 and the second region 222 are spaced apart, and the multiple second regions 222 are spaced apart. It can be understood that the first region 221 is provided with an N-type electrode 24, and the light-emitting unit 23 in each second region 222 has a light-emitting layer 231 and a P-type electrode 233 corresponding to its light-emitting layer 231, so that the P-type electrode 233 in each second region 222 can independently cooperate with the N-type electrode 24 by sharing the N-type electrode 24, thereby lighting up the corresponding light-emitting layer 231. The number of second regions 222 can be two, three, four, or more. In some application scenarios, the number of second regions 222 is three, and the light-emitting layers 231 in the three second regions 222 can be independently lit or extinguished. For example, the light-emitting layers 231 in the three second regions 222 can be lit or extinguished at the same time, or the light-emitting layers 231 of two of the three second regions 222 can be lit at the same time and the other one extinguished, or the light-emitting layers 231 of two of the three second regions 222 can be extinguished at the same time and the other one lit. Thus, multiple second regions 222 on a chip unit 20 can be displayed independently of each other, thereby improving the light-emitting efficiency and light-emitting flexibility of the light-emitting panel 2. The light-emitting unit 23 is arranged corresponding to the color conversion layer 30. For example, the projection of the light-emitting unit 23 on the drive substrate 10 and the projection of the color conversion layer 30 on the drive substrate 10 can at least partially overlap. The color conversion layer 30 can be any color. It receives light emitted by the chip unit 20 and converts it into light of other colors. For example, it can convert the light emitted by the chip unit 20 into red, green, or blue light. In some application scenarios, the color conversion layer 30 can also be made of a transparent material, eliminating the need to convert the color of the light emitted by the chip unit 20.

[0059] Through the above embodiment, the light-emitting units 23 in the plurality of second regions 222 are spaced apart from each other and can share the N-type semiconductor 22 and the N-type electrode 24 in the first region 221, so that each light-emitting unit 23 can cooperate with the N-type semiconductor 22 and the N-type electrode 24 through its own P-type electrode 233 and P-type semiconductor 232, so that each light-emitting unit 23 can independently light up or extinguish its corresponding light-emitting layer 231, thereby increasing the light-emitting area that the chip unit 20 can independently control, and improving the light-emitting efficiency and display flexibility of the light-emitting panel 2. At the same time, the size of the chip unit 20 can be increased, which helps to reduce the difficulty of transferring the chip unit 20, thereby helping to reduce the difficulty of production and thus improve the yield. Furthermore, transferring one chip unit 20 can complete the transfer of multiple light-emitting units 23, thereby facilitating the improvement of transfer efficiency.

[0060] In some embodiments, the color conversion layer 30 includes multiple sub-color conversion layers 31 spaced apart, with each sub-color conversion layer 31 corresponding to each light-emitting unit 23. For example, when a chip unit 20 has three second regions 222, the color conversion layer 30 may include three sub-color conversion layers 31 spaced apart. Any two of the three sub-color conversion layers 31 may have the same or different colors, and each sub-color conversion layer 31 may correspond to a light-emitting unit 23, such that each sub-color conversion layer 31 receives light emitted by its corresponding light-emitting unit 23 and converts it into light of a specific color. When the colors of the multiple sub-color conversion layers 31 are different, the multiple sub-color conversion layers 31 can interact with the light-emitting units 23 in different second regions 222, allowing a single chip unit 20 to emit light of different colors. This improves the light-emitting flexibility of the chip unit 20, thereby enhancing the color richness of the light-emitting panel 2.

[0061] In some embodiments, each sub-color conversion layer 31 is any one of red, green, and blue. For example, the sub-color conversion layers 31 can be all red, all green, all blue, or partially red, partially green, and partially blue. In some application scenarios, a chip unit 20 has three second regions 222 and three sub-color conversion layers 31, with one sub-color conversion layer 31 corresponding to each second region 222. The colors of the three sub-color conversion layers 31 are red, green, and blue, respectively. This allows the chip unit 20 and the color conversion layer 30 to simultaneously emit red, green, and blue light, thereby achieving full-color display.

[0062] In some embodiments, the plurality of second regions 222 are sequentially arranged in a first direction x1 parallel to the base substrate 21, and the first region 221 is located on one side of the second region 222 in a second direction x2 perpendicular to the first direction x1. For example, there may be three second regions 222, which are sequentially arranged in the first direction x1, and the first region 221 is located on the same side of the three second regions 222 in the second direction x2. Thus, by properly arranging the relative positional relationship between the first region 221 and the plurality of second regions 222, the light emitted by the plurality of light-emitting units 23 is made more uniform, thereby improving the light-emitting effect.

[0063] In some embodiments, the chip unit 20 further includes an insulating layer 25, which is filled between the first region 221 and the second region 222, and between the multiple second regions 222. The material of the insulating layer 25 may include, but is not limited to, black resin. It is understood that the first region 221 and the second region 222 may be separated by the insulating layer 25, and the multiple second regions 222 may also be separated by the insulating layer 25, thereby reducing the risk of short circuits between the first region 221 and the second region 222, and reducing the risk of short circuits between the multiple second regions 222. Furthermore, when the insulating layer 25 is made of black resin, the insulating layer 25 also helps reduce the risk of light crosstalk between the multiple second regions 222.

[0064] In some embodiments, the light-emitting panel 2 further includes an encapsulation layer 40, which is disposed on the side of the driving substrate 10 facing the chip unit 20 and covers the chip unit 20 and the color conversion layer 30. The material of the encapsulation layer 40 may include, but is not limited to, organic materials, inorganic materials, or a combination thereof. Optionally, the encapsulation layer 40 may be a black resin. The encapsulation layer 40 can provide protection for the chip unit 20 and the color conversion layer 30. When there are multiple chip units 20, the encapsulation layer 40 can reduce the risk of light crosstalk between the multiple chip units 20 and reduce the impact of external ambient light on the light-emitting panel 2, thereby improving the reliability of the light-emitting panel 2.

[0065] Combine Figure 5 , Figure 5 4 is a second structural diagram of a chip unit of a light-emitting panel according to one or more embodiments of the present application.

[0066] In some embodiments, the plurality of second regions 222 are sequentially arranged around the first region 221. For example, the first region 221 can be provided at the center of the base substrate 21, and the plurality of second regions 222 are arranged sequentially around the outer periphery of the first region 221. Thus, by sequentially arranging the plurality of second regions 222 around the first region 221, the uniformity of the light emitted by the plurality of light-emitting units 23 can be further improved, thereby improving the light-emitting effect.

[0067] In order to solve the technical problems existing in the related art, this application also provides a method for manufacturing a light emitting panel, see Figure 6-Figure 8 , Figure 6 This is a schematic flow chart of an embodiment of a method for manufacturing a light-emitting panel provided in the present application; Figure 7 This is a schematic diagram of the first process of the method for manufacturing a light-emitting panel provided by the present application; Figure 8 This is a schematic diagram of the second process of the method for manufacturing the light-emitting panel provided in this application.

[0068] To solve the above problems, the present application provides a method for manufacturing a light-emitting panel. The method is used to manufacture the above-mentioned light-emitting panel 2, and the method includes:

[0069] Step S101: Provide a driving substrate and a chip unit, the chip unit includes a base substrate and an N-type semiconductor arranged on the base substrate, the N-type semiconductor has a first region and a plurality of second regions spaced apart on a side facing away from the base substrate, the plurality of second regions are spaced apart from each other, each second region is provided with a light-emitting unit, the first region is provided with an N-type electrode, and each light-emitting unit includes a light-emitting layer, a P-type semiconductor and a P-type electrode stacked in a direction from the N-type semiconductor to the driving substrate.

[0070] Specifically, the chip unit 20 can be initially located on the temporary substrate 4. When the chip unit 20 is located on the temporary substrate 4, the chip unit 20 contacts the temporary substrate 4 via the side away from the base substrate 21. The drive substrate 10 is provided with a drive electrode 11, which is used to electrically connect to the P-type electrode 233 and the N-type electrode 24 of the chip unit 20.

[0071] Step S102: Transfer the chip unit to the driving substrate through a transfer device, and form a color conversion layer on the side of the base substrate away from the N-type semiconductor through the transfer device, wherein when the chip unit is moved to the driving substrate, the base substrate is farther away from the driving substrate than the P-type electrode.

[0072] Specifically, the chip unit 20 can be received from the temporary substrate 4 by the transfer device 3, and the color conversion layer 30 can be formed on the side of the base substrate 21 away from the N-type semiconductor 22 by the transfer device 3. The transfer device 3 can receive the chip unit 20 from the temporary substrate 4 by means including but not limited to adsorption, clamping or bonding. For example, the transfer device 3 can be provided with a receiving groove 300, the receiving groove 300 is used to receive the chip unit 20, and the side wall of the receiving groove 300 is provided with at least one pair of deformation parts 310, and the two deformation parts 310 of the same pair are arranged relative to each other in the radial direction of the receiving groove 300. The deformation parts 310 can be deformed to limit the chip unit 20 located in the receiving groove 300. For example, when the transfer device 3 receives the chip unit During the transfer process of the chip unit 20, the deformable portion 310 may be in a contracted state, thereby facilitating the chip unit 20 to enter the receiving groove 300. After the chip unit 20 enters the receiving groove 300, the deformable portion 310 may expand, thereby clamping the chip unit 20 along the radial direction of the receiving groove 300. Furthermore, when the transfer device 3 transfers the chip unit 20 to the drive substrate 10, when it is necessary to release the chip unit 20, the deformable portion 310 may contract to release the chip unit 20, thereby allowing the chip unit 20 to be transferred to the drive substrate 10. The deformable portion 310 may be made of an electrostrictive material (such as lead zirconate titanate ceramic, which deforms when powered on and off), a magnetostrictive material (such as a nickel-based alloy magnetostrictive material, which deforms when powered on by generating a magnetic field), a photostrictive material (such as lead vanadate ceramic, which deforms by absorbing light), etc.

[0073] The transfer device 3 can form a color conversion layer 30 on the side of the base substrate 21 of the chip unit 20 away from the N-type semiconductor 22 during the process of transferring the chip unit 20 to the driving substrate 10. For example, when the accommodating groove 300 accommodates the chip unit 20, the base substrate 21 of the chip unit 20 is closer to the bottom wall of the accommodating groove 300 than the P-type electrode 233. The bottom wall of the accommodating groove 300 can be provided with a nozzle 320, which can be used to apply color conversion material to the base substrate 21 to form a color conversion layer 30. For example, the number of nozzles 320 can be multiple. In some application scenarios, one nozzle 320 is arranged corresponding to one light-emitting unit 23. It should be noted that the colors of the color conversion materials applied by the multiple nozzles 320 can be the same or different, so as to facilitate the transfer device 3 to form color conversion layers 30 of different colors corresponding to each of the multiple second areas 222 on the base substrate 21. It should be noted that the transfer device 3 can form the color conversion layer 30 on the chip unit 20 during the process of moving the chip unit 20 from the temporary substrate 4 to the drive substrate 10, or can form the color conversion layer 30 on the chip unit 20 after the chip unit 20 is moved to the drive substrate 10. Thus, forming the color conversion layer 30 on the chip unit 20 using the transfer device 3 greatly improves the production efficiency of the light-emitting panel 2.

[0074] When the chip unit 20 is moved to the driving substrate 10 , the base substrate 21 is farther away from the driving substrate 10 than the P-type electrode 233 , thereby facilitating electrical connection between the chip unit 20 and the driving substrate 10 .

[0075] Combine Figure 9 , Figure 9 This is a schematic diagram of the third process of the method for manufacturing the light-emitting panel provided in this application.

[0076] In some embodiments, step S101 also includes: providing a base substrate 21 and an N-type semiconductor 22, a light-emitting layer 231 and a P-type semiconductor 232 stacked in sequence on the base substrate 21; removing part of the light-emitting layer 231 and part of the P-type semiconductor 232 to form a first region 221 and multiple second regions 222 spaced apart on the N-type semiconductor 22, and the multiple second regions 222 are spaced apart from each other; forming a P-type electrode 233 on the side of the P-type semiconductor 232 of each second region 222 away from the light-emitting layer 231 to form a light-emitting unit 23 in the second region 222, and forming an N-type electrode 24 on the side of the N-type semiconductor 22 in the first region 221 away from the base substrate 21 to form a chip unit 20.

[0077] A base substrate 21 and an N-type semiconductor 22, a light emitting layer 231 and a P-type semiconductor 232 are sequentially stacked on the base substrate 21. Specifically, Figure 9 As shown, the base substrate 21 and the N-type semiconductor 22, the light-emitting layer 231 and the P-type semiconductor 232 stacked in sequence on the base substrate 21 can be obtained by sequentially growing the N-type semiconductor 22, the light-emitting layer 231 and the P-type semiconductor 232 on the base substrate 21.

[0078] Combine Figure 10-15 , Figure 10 This is a schematic diagram of the fourth process of the method for manufacturing a light-emitting panel provided by the present application; Figure 11 This is a schematic diagram of the fifth process of the method for manufacturing a light-emitting panel provided by this application; Figure 12 This is a schematic diagram of the sixth process of the method for manufacturing a light-emitting panel provided by this application;

[0079] Figure 13 is based on Figure 12 Another perspective diagram of the light-emitting panel shown; Figure 14 This is a schematic diagram of the seventh process of the method for manufacturing a light-emitting panel provided by this application; Figure 15 is based on Figure 14 A schematic diagram of the light-emitting panel from another perspective is shown.

[0080] Part of the light emitting layer 231 and part of the P-type semiconductor 232 are removed to form a first region 221 and a plurality of second regions 222 spaced apart on the N-type semiconductor 22. The plurality of second regions 222 are spaced apart from each other. Figure 10-15 As shown, a portion of the light-emitting layer 231 and a portion of the P-type semiconductor 232 can be removed by dry etching and / or wet etching. For example, a photoresist 50 can be provided on the side of the P-type semiconductor 232 corresponding to the second region 222 facing away from the substrate 21, and then the exposed portion of the light-emitting layer 231 and the P-type semiconductor 232 not covered by the photoresist 50 is etched, thereby removing the light-emitting layer 231 and the P-type semiconductor 232 outside the second region 222. In some application scenarios, the light-emitting layer 231 and the P-type semiconductor 232 in the first region 221 can be completely removed to expose the N-type semiconductor 22 in the first region 221.

[0081] Combine Figures 16-21 , Figure 16 This is a schematic diagram of the eighth process of the method for manufacturing a light-emitting panel provided by the present application; Figure 17 This is a schematic diagram of the ninth process of the method for manufacturing a light-emitting panel provided by the present application; Figure 18 This is a schematic diagram of the tenth process of the method for manufacturing a light-emitting panel provided by the present application;

[0082] Figure 19 is based on Figure 17 Another perspective diagram of the light-emitting panel shown; Figure 20 This is a schematic diagram of the eleventh process of the method for manufacturing the light-emitting panel provided by the present application; Figure 21 is based on Figure 20 A schematic diagram of the light-emitting panel from another perspective is shown.

[0083] A P-type electrode 233 is formed on the side of the P-type semiconductor 232 in each second region 222 facing away from the light emitting layer 231 to form a light emitting unit 23 in the second region 222, and an N-type electrode 24 is formed on the side of the N-type semiconductor 22 in the first region 221 facing away from the substrate 21 to form a chip unit 20. Specifically, as Figures 16-21 As shown, a photoresist 50 can be deposited between the first region 221 and the second region 222, and between multiple second regions 222, and a metal layer 60 can be deposited on the first region 221, the second region 222, and the photoresist 50. Then, by stripping the photoresist 50, the metal layer 60 covering the photoresist 50 can be stripped off, so that the metal layer 60 in the first region 221 is retained and forms a P-type electrode 233, and the metal layer 60 in the second region 222 is retained and forms an N-type electrode 24. The method of stripping the photoresist 50 can include but is not limited to removing the photoresist 50 by a photoresist stripping solution, etc. In some application scenarios, such as Figure 18As shown, before the step of depositing the metal layer 60, the photoresist 50 can be made to protrude from the surface of the side of the P-type semiconductor 232 away from the base substrate 21, so that the metal layer 60 deposited on the photoresist 50 is disconnected from the metal layer 60 deposited on the P-type semiconductor 232, which helps to make it easier to drive the metal layer 60 on the photoresist 50 to be peeled off in the step of stripping the photoresist 50, thereby improving production efficiency.

[0084] Combine Figure 22-Figure 25 , Figure 22 This is a schematic diagram of the twelfth process of the method for manufacturing the light-emitting panel provided by the present application; Figure 23 is based on Figure 22 Another perspective diagram of the light-emitting panel shown;

[0085] Figure 24 This is a schematic diagram of the thirteenth process of the method for manufacturing the light-emitting panel provided by the present application; Figure 25 This is a schematic diagram of the fourteenth process of the method for manufacturing the light-emitting panel provided in this application.

[0086] In some embodiments, after forming a P-type electrode 233 on a side of the P-type semiconductor 232 of each second region 222 away from the light-emitting layer 231 to form a light-emitting unit 23 in the second region 222, and forming an N-type electrode 24 on a side of the N-type semiconductor 22 of the first region 221 away from the substrate 21 to form a chip unit 20, the manufacturing method further includes: forming an insulating layer 25 between the first region 221 and the second region 222, and between multiple second regions 222. Specifically, as Figure 22-Figure 25 As shown, an insulating portion 70 can be deposited on the side of the chip unit 20 away from the base substrate 21, and the insulating portion 70 of the first region 221 and the second region 222 can be removed by photolithography, so that the insulating portion 70 retained between the first region 221 and the second region 222 and between multiple second regions 222 forms an insulating layer 25.

[0087] In some application scenarios, a plurality of units to be cut are arranged on the base substrate 21, each unit to be cut includes an N-type semiconductor 22, and the side of the N-type semiconductor 22 facing away from the base substrate 21 has a first region 221 and a plurality of second regions 222 spaced apart from each other, and each second region 222 is provided with a light-emitting unit 23, and the first region 221 is provided with an N-type electrode 24; each light-emitting unit 23 includes a light-emitting layer 231, a P-type semiconductor 232 and a P-type electrode 233 stacked on the N-type semiconductor 22. Specifically, the unit to be cut and the base substrate 21 can be cut to obtain a chip unit 20.

[0088] In summary, the light-emitting panel 2 of the present application includes a driving substrate 10, a chip unit 20 and a color conversion layer 30. The chip unit 20 is arranged on the driving substrate 10 and is electrically connected to the driving substrate 10; the color conversion layer 30 is arranged on the side of the chip unit 20 away from the driving substrate 10; wherein the chip unit 20 includes a base substrate 21 and an N-type semiconductor 22, the base substrate 21 and the driving substrate 10 are arranged relative to each other; the N-type semiconductor 22 is located on the side of the base substrate 21 facing the driving substrate 10, and the side of the N-type semiconductor 22 away from the base substrate 21 is provided. The side has a first area 221 and multiple second areas 222 that are spaced apart from each other, and the multiple second areas 222 are spaced apart from each other. Each second area 222 is provided with a light-emitting unit 23, and the first area 221 is provided with an N-type electrode 24; wherein the light-emitting unit 23 is arranged corresponding to the color conversion layer 30, and each light-emitting unit 23 includes a light-emitting layer 231, a P-type semiconductor 232 and a P-type electrode 233 stacked in the direction from the N-type semiconductor 22 to the driving substrate 10, and the P-type electrode is used to cooperate with the N-type electrode 24 to light up the light-emitting layer 231. Through the above embodiment, the light-emitting units 23 in the plurality of second regions 222 are spaced apart from each other and can share the N-type semiconductor 22 and the N-type electrode 24 in the first region 221, so that each light-emitting unit 23 can cooperate with the N-type semiconductor 22 and the N-type electrode 24 through its own P-type electrode 233 and P-type semiconductor 232, so that each light-emitting unit 23 can independently light up or extinguish the light-emitting layer 231 corresponding to it, thereby increasing the light-emitting area that can be independently controlled by the chip unit 20, and improving the light-emitting efficiency and display flexibility of the light-emitting panel 2.

[0089] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some or all of the technical features therein. These modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present application, and they should all be included in the scope of the claims and specification of the present application. In particular, as long as there is no structural conflict, the various technical features mentioned in the various embodiments can be combined in any way. The present application is not limited to the specific embodiments disclosed herein, but includes all technical solutions that fall within the scope of the claims.

Claims

1. A light-emitting panel, characterized in that: The light emitting panel comprises: Driver substrate; a chip unit, disposed on the driving substrate and electrically connected to the driving substrate; a color conversion layer, disposed on a side of the chip unit facing away from the driving substrate; Wherein, the chip unit includes: a base substrate, arranged opposite to the driving substrate and spaced apart; An N-type semiconductor is located on a side of the base substrate facing the drive substrate, and a side of the N-type semiconductor facing away from the base substrate has a first region and a plurality of second regions spaced apart from each other, each second region has a light-emitting unit, and the first region has an N-type electrode; Among them, the light-emitting units are arranged corresponding to the color conversion layer, and each of the light-emitting units includes a light-emitting layer, a P-type semiconductor and a P-type electrode stacked in the direction from the N-type semiconductor to the driving substrate, and the P-type electrode is used to cooperate with the N-type electrode to light up the light-emitting layer.

2. The light emitting panel according to claim 1, wherein: The color conversion layer includes a plurality of sub-color conversion layers that are spaced apart, and one sub-color conversion layer is correspondingly disposed to one light-emitting unit.

3. The light emitting panel according to claim 2, wherein: The color of each sub-color conversion layer is any one of red, green and blue.

4. The light emitting panel according to claim 1, wherein: The plurality of second regions are sequentially arranged in a first direction parallel to the base substrate, and the first region is located on one side of the second region in a second direction perpendicular to the first direction.

5. The light emitting panel according to claim 1, wherein: A plurality of second regions are sequentially arranged around the first region.

6. The light-emitting panel according to any one of claims 1 to 5, characterized in that: The chip unit further includes an insulating layer, wherein the insulating layer is filled between the first region and the second region, and is filled between a plurality of second regions.

7. The light emitting panel according to claim 1, wherein: The light emitting panel further includes an encapsulation layer, which is arranged on a side of the driving substrate facing the chip unit and covers the chip unit and the color conversion layer.

8. A method for manufacturing a light-emitting panel, characterized in that: The manufacturing method is used to manufacture the light-emitting panel according to any one of claims 1 to 7, and the method comprises: A drive substrate and a chip unit are provided. The chip unit includes a base substrate and an N-type semiconductor disposed on the base substrate. The N-type semiconductor has a first region and a plurality of second regions spaced apart on a side facing away from the base substrate. The plurality of second regions are spaced apart from each other. Each second region is provided with a light-emitting unit. The first region is provided with an N-type electrode. Each light-emitting unit includes a light-emitting layer, a P-type semiconductor, and a P-type electrode stacked in a direction from the N-type semiconductor to the drive substrate. The chip unit is transferred to the driving substrate by a transfer device, and a color conversion layer is formed on the side of the base substrate away from the N-type semiconductor by the transfer device, wherein when the chip unit is moved to the driving substrate, the base substrate is farther away from the driving substrate than the P-type electrode.

9. The production method according to claim 8, characterized in that: The step of providing a driving substrate and a chip unit includes: Providing a base substrate and an N-type semiconductor, a light-emitting layer, and a P-type semiconductor stacked in sequence on the base substrate; removing a portion of the light-emitting layer and a portion of the P-type semiconductor to form a first region and a plurality of second regions spaced apart from each other on the N-type semiconductor; A P-type electrode is formed on the side of the P-type semiconductor in each second region away from the light-emitting layer to form a light-emitting unit in the second region, and an N-type electrode is formed on the side of the N-type semiconductor in the first region away from the substrate to form a chip unit.

10. A display device, characterized in that: The display device comprises the light-emitting panel according to any one of claims 1 to 7.

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