Display substrate and display device

Abstract

The invention discloses a display substrate and a display device. The display substrate comprises a substrate and a plurality of sub-pixels arranged on the substrate, each sub-pixel comprises a driving transistor, a maintenance part, n connecting structures and n light-emitting parts, each light-emitting part comprises a first electrode, and n is an integer greater than or equal to 2; the driving transistor is connected with the maintenance part, one first electrode is connected with the maintenance part through one connecting structure, and different first electrodes are connected with different connecting structures; wherein the connection structure and the first electrode meet at least one of the following conditions, so that the connection structure is easier to fuse under laser irradiation: the laser absorption efficiency of the connection structure is greater than the laser absorption efficiency of the first electrode; the thickness of the connecting structure in the direction perpendicular to the substrate is smaller than that of the first electrode in the direction perpendicular to the substrate; the melting point temperature of the connection structure is lower than that of the first electrode.

Description

Technical Field

[0001] This article relates to but is not limited to display technology, and in particular to a display substrate and a display device. Background Art

[0002] Organic light-emitting diodes (OLEDs) are active light-emitting display devices with advantages such as self-luminescence, wide viewing angles, high contrast, low power consumption, and extremely fast response times. With the continuous advancement of display technology, displays using OLEDs as light-emitting elements and thin-film transistors (TFTs) for signal control have become mainstream products in the display field. Summary of the Invention

[0003] The following is a summary of the subject matter described in detail herein. This summary is not intended to limit the scope of the claims.

[0004] In a first aspect, an embodiment of the present disclosure provides a display substrate, comprising a substrate and a plurality of sub-pixels arranged on the substrate, each of the sub-pixels comprising a driving transistor, a maintenance portion, n connection structures and n light-emitting portions, each of the light-emitting portions comprising a first electrode, wherein n is an integer greater than or equal to 2; the driving transistor is connected to the maintenance portion, one first electrode is connected to the maintenance portion via one connection structure, and different first electrodes are connected to different connection structures; wherein the connection structure and the first electrode satisfy at least one of the following conditions, so that the connection structure is more likely to melt under laser irradiation: the efficiency of the connection structure in absorbing laser light is greater than the efficiency of the first electrode in absorbing laser light; the thickness of the connection structure in a direction perpendicular to the substrate is less than the thickness of the first electrode in a direction perpendicular to the substrate; the melting point temperature of the connection structure is less than the melting point temperature of the first electrode.

[0005] In an exemplary embodiment, the efficiency of the connection structure in absorbing laser light is greater than that of the first electrode, including: in a plane perpendicular to the substrate, the undulation degree of the cross-sectional shape of the connection structure is greater than that of the first electrode.

[0006] In an exemplary embodiment, in a plane perpendicular to the base, the cross-section of the connection structure is uneven.

[0007] In an exemplary embodiment, in a plane perpendicular to the base, a cross-sectional shape of the connecting structure includes at least one arc convex toward one side of the base.

[0008] In an exemplary embodiment, in a direction perpendicular to the substrate, a maximum height difference of a surface of the connection structure close to the substrate is greater than or equal to 0.9 micrometers and less than or equal to 1.1 micrometers.

[0009] In an exemplary embodiment, in a plane perpendicular to the substrate, a cross-sectional shape of a surface of the connection structure on a side away from the substrate is uneven.

[0010] In an exemplary embodiment, the efficiency of the connection structure in absorbing laser light is greater than the efficiency of the first electrode in absorbing laser light, which includes: the absorption rate of the material of the connection structure to laser light is greater than the absorption rate of the material of the first electrode to laser light.

[0011] In an exemplary embodiment, the thickness of the connecting structure in a direction perpendicular to the substrate is less than the thickness of the first electrode in a direction perpendicular to the substrate, including: in a direction perpendicular to the substrate, the first electrode is a multi-layer composite structure, and the connecting structure is a single-layer structure.

[0012] In an exemplary embodiment, the thickness of the connecting structure in a direction perpendicular to the substrate is less than the thickness of the first electrode in a direction perpendicular to the substrate, including: in a direction perpendicular to the substrate, the connecting structure and the first electrode are both multi-layer composite structures, and the film layers constituting the connecting structure include at least one of the film layers constituting the first electrode.

[0013] In an exemplary embodiment, an absorption portion is further included, which is located on a side of the connecting structure away from the substrate and in contact with the connecting structure; the absorption rate of the absorption portion to the laser is greater than the absorption rate of the connecting structure to the laser.

[0014] In an exemplary embodiment, the material of the absorption part includes an organic material.

[0015] In an exemplary embodiment, the color of the absorption part is black.

[0016] In an exemplary embodiment, the display substrate includes a light-transmitting area and a display area, and the sub-pixels are arranged in the display area; the light-transmitting area is configured to transmit light.

[0017] In an exemplary embodiment, the laser is an infrared laser.

[0018] In a second aspect, an embodiment of the present disclosure provides a display device, comprising: the display substrate as described above.

[0019] Other advantages of the present disclosure can be realized and obtained through the solutions described in the specification and the drawings.

[0020] Still other aspects will become apparent upon reading and understanding the accompanying drawings and detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The accompanying drawings are used to provide an understanding of the technical solution of the present disclosure and constitute a part of the specification. Together with the embodiments of the present disclosure, they are used to explain the technical solution of the present disclosure and do not constitute a limitation to the technical solution of the present disclosure.

[0022] Figure 1 This is a schematic diagram of the planar structure of an OLED display substrate; Figure 2 Schematic diagram of the introduction of foreign matter into a light-emitting element; Figure 3 is a schematic structural diagram of a transparent display substrate in an exemplary embodiment; Figure 4 In an exemplary embodiment Figure 3 Schematic diagram of the equivalent structure of a single sub-pixel; Figure 5 In an exemplary embodiment Figure 4 A schematic cross-sectional structural diagram of the first light-emitting portion; Figure 6 is a schematic diagram of a cross-sectional structure of a first light-emitting portion in an exemplary embodiment; Figure 7 is a schematic cross-sectional structural diagram of a first light-emitting portion in another exemplary embodiment; Figure 8 is a schematic cross-sectional structural diagram of a first light-emitting portion in another exemplary embodiment; Figure 9 is a schematic cross-sectional structural diagram of a first light-emitting portion in another exemplary embodiment; Figure 10 FIG. 1 is a schematic diagram showing a cross-sectional structure of a substrate in an exemplary embodiment. DETAILED DESCRIPTION

[0023] The present disclosure describes a plurality of embodiments, but the description is exemplary rather than restrictive, and it will be apparent to those skilled in the art that there may be more embodiments and implementations within the scope of the embodiments described in the present disclosure. Although many possible feature combinations are shown in the drawings and discussed in the detailed description, many other combinations of the disclosed features are also possible. Unless specifically limited, any feature or element of any embodiment may be used in combination with any other feature or element in any other embodiment, or may replace any other feature or element in any other embodiment.

[0024] The present disclosure includes and contemplates combinations of features and elements known to those of ordinary skill in the art. The disclosed embodiments, features, and elements of the present disclosure may also be combined with any conventional features or elements to form a unique inventive solution defined by the claims. Any features or elements of any embodiment may also be combined with features or elements from other inventive solutions to form another unique inventive solution defined by the claims. Therefore, it should be understood that any feature shown and / or discussed in this disclosure may be implemented individually or in any appropriate combination. Therefore, the embodiments are not subject to other limitations except for the limitations set forth in the appended claims and their equivalents. In addition, various modifications and changes may be made within the scope of protection of the appended claims.

[0025] In addition, when describing representative embodiments, the specification may have presented the method and / or process as a specific sequence of steps. However, to the extent that the method or process does not rely on the specific order of the steps described herein, the method or process should not be limited to the steps in the specific order described. As will be understood by those skilled in the art, other orders of steps are also possible. Therefore, the specific order of the steps set forth in the specification should not be interpreted as a limitation on the claims. In addition, the claims to the method and / or process should not be limited to performing their steps in the order written, and those skilled in the art can readily understand that these orders can be changed and still remain within the spirit and scope of the disclosed embodiments.

[0026] In the drawings, the size of one or more components, layer thicknesses, or regions may be exaggerated for clarity. Therefore, one embodiment of the present disclosure is not necessarily limited to these dimensions, and the shapes and sizes of one or more components in the drawings do not reflect true proportions. Furthermore, the drawings schematically illustrate idealized examples, and one embodiment of the present disclosure is not limited to the shapes or values ​​shown in the drawings.

[0027] In this specification, ordinal numbers such as "first," "second," and "third" are provided to avoid confusion among constituent elements, and are not intended to limit the number. "Multiple" in this disclosure means two or more.

[0028] In this specification, for convenience, words and phrases indicating orientation or positional relationships, such as "middle," "upper," "lower," "front," "back," "vertical," "horizontal," "top," "bottom," "inside," and "outside," are used to illustrate the positional relationships of constituent elements with reference to the accompanying drawings. This is merely for the purpose of facilitating the description of this specification and simplifying the description, and is not intended to indicate or imply that the device or element referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on the present disclosure. The positional relationships of constituent elements may be appropriately changed depending on the orientation of the constituent elements being described. Therefore, the present disclosure is not limited to the words and phrases described in the specification and may be appropriately replaced depending on the circumstances.

[0029] In this specification, a transistor refers to a device that includes at least three terminals: a gate electrode, a drain electrode, and a source electrode. A transistor has a channel region between a drain electrode (drain electrode terminal, drain region, or drain) and a source electrode (source electrode terminal, source region, or source), and current can flow through the drain electrode, the channel region, and the source electrode. Note that in this specification, the channel region refers to the region through which current primarily flows.

[0030] In this specification, the first electrode can be a drain electrode and the second electrode can be a source electrode, or vice versa. The functions of "source electrode" and "drain electrode" may be interchanged when using transistors with opposite polarity or when the direction of current changes during circuit operation. Therefore, in this specification, "source electrode" and "drain electrode" can be interchanged, and "source terminal" and "drain terminal" can be interchanged.

[0031] In this specification, unless otherwise clearly specified and limited, the terms "installed", "connected" and "connected" should be understood in a broad sense. For example, it can be a fixed connection, or a detachable connection, or an integral connection; it can be a mechanical connection, or an electrical connection; it can be a direct connection, or an indirect connection through an intermediate piece, or a connection between the two elements. For those of ordinary skill in the art, the meanings of the above terms in this disclosure can be understood according to the circumstances. Among them, "electrical connection" includes the situation where constituent elements are connected together through an element with some electrical function. There is no special restriction on "elements with some electrical function" as long as they can transmit electrical signals between connected constituent elements. Examples of "elements with some electrical function" include not only electrodes and wiring, but also switching elements such as transistors, resistors, inductors, capacitors, and other elements with various functions.

[0032] In this specification, "parallel" refers to a state where the angle formed by two straight lines is greater than -10° and less than 10°, and thus also includes a state where the angle is greater than -5° and less than 5°. Furthermore, "perpendicular" refers to a state where the angle formed by two straight lines is greater than 80° and less than 100°, and thus also includes a state where the angle is greater than 85° and less than 95°.

[0033] In this specification, the terms "film" and "layer" may be interchanged. For example, "conductive layer" may be replaced with "conductive film." Similarly, "insulating film" may be replaced with "insulating layer."

[0034] The triangles, rectangles, trapezoids, pentagons or hexagons in this specification are not in the strict sense, but may be approximate triangles, rectangles, trapezoids, pentagons or hexagons, etc. There may be some small deformations caused by tolerances, and there may be chamfers, arc edges and deformations.

[0035] The term "about" in the present disclosure refers to a numerical value that is not strictly defined and allows for process and measurement errors.

[0036] The embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings.

[0037] Figure 1 Schematic diagram of the planar structure of an OLED display substrate. Figure 1 As shown, within the plane of the display substrate, the display substrate may include a plurality of pixel units P arranged in a matrix. At least one pixel unit P may include a first sub-pixel P1 that emits a first color light, a second sub-pixel P2 that emits a second color light, and a third sub-pixel P3 that emits a third color light. Each of the three sub-pixels may include a pixel driving circuit and a light-emitting element. The pixel driving circuit in the sub-pixel is respectively connected to a scan signal line and a data signal line. The pixel driving circuit is configured to receive a data voltage transmitted by the data signal line under the control of the scan signal line and output a corresponding current to the light-emitting element. The light-emitting element in the sub-pixel is connected to the pixel driving circuit of the sub-pixel in which it is located. The light-emitting element is configured to emit light of corresponding brightness in response to the current output by the pixel driving circuit of the sub-pixel in which it is located.

[0038] In an exemplary embodiment, the first subpixel P1 may be a red subpixel (R) that emits red light, the second subpixel P2 may be a blue subpixel (B) that emits blue light, and the third subpixel P3 may be a green subpixel (G) that emits green light. In an exemplary embodiment, the subpixels may be shaped in any one or more of a triangle, square, rectangle, rhombus, trapezoid, parallelogram, pentagon, hexagon, or other polygonal shapes. The three subpixels may be arranged horizontally, vertically, or in a triangular pattern.

[0039] In an exemplary embodiment, a pixel unit may include four sub-pixels. For example, the four sub-pixels may include a red sub-pixel, a green sub-pixel, a blue sub-pixel, and a white sub-pixel that emits white (W) light. In another example, the four sub-pixels may include a red sub-pixel, a blue sub-pixel, and two green sub-pixels. In an exemplary embodiment, the four sub-pixels may be arranged horizontally, vertically, in a square, or in a diamond shape, etc., which is not limited in this disclosure.

[0040] Dark spot defects may exist during the preparation process of OLED display substrates. The cause of dark spots is that conductive foreign matter connects the anode and cathode of the light-emitting element, making the sub-pixel unable to emit light normally. Figure 2 Schematic diagram of adding foreign matter into the light-emitting element. Figure 2 As shown, the light-emitting element may include a cathode, an anode, and an organic light-emitting layer disposed between the cathode and the anode. When foreign matter is doped into the organic light-emitting layer, the foreign matter will contact the cathode and the anode at the same time, causing the cathode and the anode to be conductive, and the organic light-emitting layer will not emit light normally, thereby generating dark spots on the display substrate. In order to reduce the impact of foreign matter on sub-pixels, a sub-pixel can be configured to include multiple light-emitting parts. When a foreign matter appears, a laser can be used to cut off the connection between the light-emitting part where the foreign matter is located and the corresponding driving transistor, so that the remaining light-emitting parts in the sub-pixel are not affected, thereby achieving repair of the sub-pixel. However, in the process of laser repairing the sub-pixel, it is easy to cause damage to other film layers near the laser irradiation position, which may cause new defects.

[0041] Figure 3 FIG. 1 is a schematic structural diagram of a transparent display substrate in an exemplary embodiment. Figure 3 As shown, the transparent display (see-through display) substrate includes a light-transmitting area TG and a display area AA. The display area AA can form a display screen, and the light-transmitting area TG can transmit light, allowing the user to see the situation behind the display substrate while watching the display screen. The display area AA includes multiple pixel units, each of which includes four sub-pixels, namely the first sub-pixel P1, the second sub-pixel P2, the third sub-pixel P3, and the fourth sub-pixel P4. Each sub-pixel can include two light-emitting parts (not shown). The two light-emitting parts are interconnected by a maintenance part W. If a foreign object is present between the anode and cathode of one of the light-emitting parts, a laser can be used to cut the connection between the maintenance part W and the light-emitting part, thereby isolating the light-emitting part where the foreign object is located.

[0042] Figure 4 In an exemplary embodiment Figure 3 Schematic diagram of the equivalent structure of a single sub-pixel. Figure 4As shown, the display substrate includes a plurality of gate lines 100 and a plurality of data lines 20. The plurality of gate lines 100 and the plurality of data lines 20 intersect with each other to define a plurality of sub-pixel areas. A sub-pixel is provided in each sub-pixel area. Each sub-pixel includes a first light-emitting portion and a second light-emitting portion. A first electrode can be provided in each light-emitting portion. The first electrodes of the two light-emitting portions in the same sub-pixel are independent of each other and can be connected to the driving transistor respectively through the maintenance portion W. The first electrode can be an anode. Combined Figure 4 As shown, each sub-pixel includes a driving transistor 40, two light-emitting parts and a maintenance part W. A first electrode 60 is provided in the first light-emitting part, and a first electrode 70 is provided in the second light-emitting part. The driving transistor 40 is connected to the gate line 100 and the data line 20, respectively, and is used to generate a driving current according to the data signal provided by the data line 20 under the control of the gate scanning signal provided by the gate line 100. The driving transistor 40 is connected to the first electrode 60 and the first electrode 70 respectively through the maintenance part W. The maintenance part W can transmit the driving current output by the driving transistor 40 to the first electrode 60 and the first electrode 70 respectively, so that the corresponding first light-emitting part and the second light-emitting part emit light under the drive of the driving current. The maintenance part W can be connected to multiple first electrodes in a single sub-pixel through a connection structure. As shown Figure 4 As shown, the maintenance portion W can be connected to the first electrode 60 via the first connection structure L1, and the maintenance portion W can be connected to the first electrode 70 via the second connection structure L2. In this embodiment, the gate line and the data line intersecting each other refers to the projections of the gate line and the data line on the substrate intersecting each other. For example, the projections of the gate line and the data line on the substrate can intersect each other perpendicularly, and the gate line and the data line are not in direct contact due to the presence of an insulating layer.

[0043] Figure 5 In an exemplary embodiment Figure 4 Schematic diagram of the cross-sectional structure of the first light-emitting portion. Figure 5As shown, the driving transistor 40 may include an active layer 401, a gate electrode 402, a first electrode 403, and a second electrode 404, arranged in sequence away from the substrate 10. The first electrode 403 and the second electrode 404 are arranged in the same layer and are respectively connected to the ends of the active layer 401. A first insulating layer 11 is provided between the substrate 10 and the active layer 401, a second insulating layer 12 is provided between the active layer 401 and the gate electrode 402, and a third insulating layer 13 is provided between the gate electrode 402 and the first electrode 403. The first insulating layer 11 may be referred to as a buffer layer, the second insulating layer 12 may be referred to as a gate insulating (GI) layer, and the third insulating layer 13 may be referred to as a passivation (PVX) layer. The light-emitting element within the first light-emitting portion may include a first electrode 60, an organic light-emitting layer 61, and a second electrode 62, arranged in sequence. The first electrode 60 may be located on the side of the driving transistor 40 away from the substrate 10. A fourth insulating layer 14 may be provided between the driving transistor 40 and the first electrode 60. The fourth insulating layer 14 may be referred to as a planarization layer. A pixel definition layer 15 may be provided on the side of the first electrode 60 facing away from the substrate 10. A pixel opening may be provided on the pixel definition layer 15, exposing the surface of the first electrode 60. An organic light-emitting layer 61 may at least fill the pixel opening and contact the first electrode 60. A second electrode 62 may cover the side of the organic light-emitting layer 61 facing away from the substrate 10. The second electrode 62 may be a cathode, and the material of the second electrode 62 may be a transparent conductive oxide. A maintenance portion W may be connected to the second electrode 404 of the driving transistor 40, and the maintenance portion W may be connected to the first electrode 60 via a first connection structure L1. Figure 5 In the embodiment, the maintenance portion W and the first electrode 60 are arranged on the same layer as each other. In other embodiments, the maintenance portion W can be arranged on the same layer as the second electrode 404, or the maintenance portion W can be arranged in a film layer between the first electrode 60 and the second electrode 404. The arrangement can be flexibly adjusted as needed. The "A and B are arranged on the same layer" mentioned in the present disclosure means that A and B are formed simultaneously through the same patterning process. The cross-sectional structure of the second light-emitting portion at the first electrode 70 can be referred to. Figure 5 As shown, no further details are given here.

[0044] In an exemplary embodiment, the organic light emitting layer may include an emission layer (EML), and any one or more of the following film layers: a hole injection layer (HIL), a hole transport layer (HTL), an electron blocking layer (EBL), a hole blocking layer (HBL), an electron transport layer (ETL), and an electron injection layer (EIL).

[0045] In an exemplary embodiment, a single sub-pixel may include a greater number of light-emitting sections, and the driving transistor may be connected to each light-emitting section via the maintenance section W. A greater number of maintenance sections W may also be provided for a single sub-pixel, and the driving transistor may be connected to different light-emitting sections via different maintenance sections W, and the arrangement may be flexible as needed.

[0046] In an exemplary embodiment, a light shielding layer (not shown) may be further provided on a side of the active layer 401 close to the substrate 10, and the orthographic projection of the active layer 401 on the substrate 10 may be located within the range of the orthographic projection of the light shielding layer on the substrate 10. The light shielding layer may shield the channel region of the transistor on the display substrate from light.

[0047] In an exemplary embodiment, the gate line 100 and the data line 20 may be located in a conductive layer such as a light shielding layer, a gate electrode 402 , a first electrode 403 , and a second electrode 404 , respectively.

[0048] In the process of preparing a transparent display substrate, a transparent conductive oxide material needs to be sputtered. This preparation step easily introduces foreign matter between the anode and cathode of the light-emitting element. Figure 5 As shown, if there is a foreign object in the first light-emitting portion where the first electrode 60 is located, the first connection structure L1 can be irradiated with a laser to disconnect the first connection structure L1 at the dotted area, thereby disconnecting the repair portion W from the first electrode 60 and isolating the first light-emitting portion. However, in this embodiment, the first electrode 60, the first connection structure L1, and the repair portion W are arranged on the same layer. Under the irradiation of the laser, the first connection structure L1 melts in the dotted area. The heat from the laser is transferred to the first electrode 60 and the entire organic light-emitting layer, which may cause the organic light-emitting layer near the cutting position to peel and crack. The deformation pressure further spreads to the adjacent transparent area, which may cause damage to the film layer in the transparent area, reduce the light transmittance of the light-transmitting area, and cause bright spots or bright lines to appear in the light-transmitting area during display, affecting the display effect.

[0049] An embodiment of the present disclosure provides a display substrate, comprising a substrate and a plurality of sub-pixels arranged on the substrate, each of the sub-pixels comprising a driving transistor, a maintenance portion, n connection structures and n light-emitting portions, each of the light-emitting portions comprising a first electrode, wherein n is an integer greater than or equal to 2; the driving transistor is connected to the maintenance portion, one first electrode is connected to the maintenance portion via one connection structure, and different first electrodes are connected to different connection structures; wherein the connection structure and the first electrode satisfy at least one of the following conditions, so that the connection structure is more likely to be melted under laser irradiation: the efficiency of the connection structure in absorbing laser light is greater than the efficiency of the first electrode in absorbing laser light; the thickness of the connection structure in a direction perpendicular to the substrate is less than the thickness of the first electrode in a direction perpendicular to the substrate; the melting point temperature of the connection structure is less than the melting point temperature of the first electrode In the display substrate provided by the embodiment of the present disclosure, each sub-pixel includes n light-emitting parts, each light-emitting part includes a first electrode, a driving transistor is connected to the maintenance part, and the n first electrodes are connected to the maintenance part one by one through n connection structures. In the case where laser repair of the light-emitting part is required, the connection structure connected to the light-emitting part can be directly irradiated with a laser. Compared with the first electrode, by setting the connection structure to meet the conditions of higher efficiency in absorbing laser light, smaller thickness and lower melting point temperature, the connection structure can make the use of laser light more efficient, and the connection structure is more likely to melt under laser irradiation, which helps to prevent the laser repair process from causing damage to other film layers of the display substrate.

[0050] In an exemplary embodiment, the cross-sectional shape of the connecting structure has a greater degree of undulation than the cross-sectional shape of the first electrode in a plane perpendicular to the substrate. The greater degree of undulation in the cross-sectional shape of the connecting structure in a plane perpendicular to the substrate allows the surface area of ​​the connecting structure to be greater than the surface area of ​​the first electrode for an orthographic projection of the same size on the substrate. Under the same laser irradiation area, the larger the surface area of ​​the connecting structure, the more heat it absorbs, making it more likely to fuse.

[0051] In an exemplary embodiment, n may be 2. Figure 6 FIG. 4 is a schematic diagram of the cross-sectional structure of the first light-emitting portion in an exemplary embodiment. Figure 6 and Figure 5 The difference is that the structure of the first connection structure L1 is different. The rest of the content can refer to the above description. Figure 5 The description is not repeated here.

[0052] like Figure 6As shown, the cross-sectional shape of the first connection structure L1 in a plane perpendicular to the substrate 10 is uneven, while the cross-sectional shape of the first electrode 60 has relatively less undulation. By providing the first connection structure L1 with an uneven cross-sectional shape in a plane perpendicular to the substrate 10, the surface area of ​​the first connection structure L1 per unit area of ​​laser irradiation is larger during the laser repair process, receiving more heat within the same irradiation time. This improves the thermal conversion efficiency of the first connection structure L1, allowing for faster melting in the dotted area, thereby increasing laser utilization efficiency. By reducing the irradiation time during the laser repair process, defects in the organic light-emitting layer can be prevented, thereby preventing damage to the film layer in the light-transmitting area.

[0053] In an exemplary embodiment, the cross-sectional shape of the first connection structure L1 in a plane perpendicular to the substrate 10 may include at least one arc convex toward one side of the substrate 10. For example, the cross-sectional shape of the first connection structure L1 in a plane perpendicular to the substrate 10 may include at least one semicircular shape convex toward one side of the substrate 10. By providing the cross-sectional shape of the first connection structure L1 in a plane perpendicular to the substrate 10 with at least one arc convex toward one side of the substrate 10, not only is the surface area of ​​the first connection structure L1 per unit area of ​​laser irradiation increased, but the laser light is also converged at the arc position, further improving the efficiency of the laser light utilization by the first connection structure L1 and accelerating the melting process.

[0054] In an exemplary embodiment, in a direction perpendicular to the substrate 10, the maximum height difference of the surface of the first connection structure L1 close to the substrate 10 may be a first height H1, and the first height H1 may be greater than or equal to 0.9 micrometers and less than or equal to 1.1 micrometers. Preferably, the first height H1 may be about 1 micrometer. Figure 6 As shown, before forming the first connection structure L1 , an arc-shaped recess with a first height H1 may be formed at a corresponding position on the fourth insulating layer 14 , thereby forming the first connection structure L1 of corresponding shape and size.

[0055] In an exemplary embodiment, the first connection structure L1 and the first electrode 60 may be provided in the same layer. By providing the first connection structure L1 and the first electrode 60 with different shapes, the first connection structure L1 can more efficiently utilize the laser.

[0056] In an exemplary embodiment, the first connection structure L1 and the first electrode 60 may employ a multi-layer composite structure, such as a three-layer composite structure of copper (Cu) / molybdenum-niobium alloy (MoNb) / indium-tin oxide (ITO) or Cu / aluminum-nickel alloy (AlNi) / ITO. The reflectivity of the aluminum-nickel alloy may be greater than or equal to 85%.

[0057] In an exemplary embodiment, within a plane perpendicular to the substrate 10, the cross-sectional shape of the surface of the first electrode 60 on the side close to the substrate 10 may be a straight line, a broken line, or a curved line, and the cross-sectional shape of the surface of the first electrode 60 on the side away from the substrate 10 may also be a straight line, a broken line, or a curved line. The cross-sectional shape of the first electrode 60 may be, for example, a rectangle, a trapezoid, or the like. In other embodiments, the cross-sectional shape of the first electrode 60 in a plane perpendicular to the substrate 10 may also be concave and convex.

[0058] In an exemplary embodiment, the maintenance portion W, the first connection structure L1 and the first electrode 60 may be disposed in the same layer.

[0059] Figure 7 FIG. 4 is a schematic diagram of the cross-sectional structure of the first light-emitting portion in another exemplary embodiment. Figure 7 and Figure 6 The difference is that the maximum thickness of the first connection structure L1 and the first electrode 60 are different. The rest of the content can refer to the above description. Figure 6 The description is not repeated here.

[0060] In an exemplary embodiment, in a direction perpendicular to the substrate 10, the thickness of the first electrode 60 may be a second height H2, and the thickness of the first connection structure L1 may be a third height H3, where the second height H2 may be greater than the third height H3. By reducing the thickness of the first connection structure L1, the heat required to fuse the first connection structure L1 is reduced, allowing for the use of a lower-power laser to irradiate the first connection structure L1, thereby reducing the impact of the laser on other film layers. By reducing the thickness of the first connection structure L1, the efficiency of the laser beam utilized by the first connection structure L1 is indirectly improved, while requiring minimal changes to the original structure of the display substrate, thus simplifying the manufacturing process.

[0061] In an exemplary embodiment, the second height H2 may be greater than or equal to 20 nanometers, and preferably, the second height H2 may be greater than or equal to 100 nanometers. The values ​​of the second height H2 and the third height H3 may be flexibly set as needed.

[0062] In an exemplary embodiment, the first electrode 60 and the first connection structure L1 may be formed separately on the substrate 10 to facilitate forming respective thicknesses. In an exemplary embodiment, the first connection structure L1 and the repair portion W may be provided on the same layer.

[0063] In an exemplary embodiment, the first electrode 60 and the first connection structure L1 may be made of the same material, differing only in thickness.

[0064] In an exemplary embodiment, the first electrode 60 and the first connection structure L1 may both employ a multi-layer composite structure, with the number of layers comprising the first connection structure L1 being less than the number of layers comprising the first electrode 60, thereby reducing the thickness of the first connection structure L1. For example, the first electrode 60 may employ a three-layer composite structure such as Cu / MoNb / ITO or Cu / AlNi / ITO, and the first connection structure L1 may be composed of one or two layers of the three-layer composite structure of the first electrode 60.

[0065] In an exemplary embodiment, the melting point of the first connection structure L1 can be lower than the melting point of the first electrode 60. In this embodiment, by setting the melting point of the first connection structure L1 to be lower, the heat required to melt the first connection structure L1 is reduced, and a lower-power laser can be used to irradiate the first connection structure L1, thereby reducing the impact of the laser on other film layers. By setting the melting point of the first connection structure L1 to be lower, the efficiency of the laser light utilization by the first connection structure L1 can be indirectly improved.

[0066] In an exemplary embodiment, the material of the first electrode 60 may include copper (Cu), indium tin oxide (ITO), etc. In an exemplary embodiment, the material of the first connection structure L1 may include MoNb, which has a lower melting point and a lower melting temperature than the material of the first electrode 60 .

[0067] In an exemplary embodiment, the laser absorptivity of the first connection structure L1 can be greater than that of the first electrode 60. The laser can be an infrared laser, for example, with a wavelength of 1025 nanometers. In this embodiment, the high absorptivity of the infrared laser by the first connection structure L1 can be utilized to improve the thermal conversion efficiency of the infrared laser. For the same irradiation time, the first connection structure L1 utilizes the laser more efficiently, absorbs more heat, and can more quickly cause a fuse to break in the dotted area.

[0068] In an exemplary embodiment, the material of the first connection structure L1 may include carbon nanotubes, metal oxides, a stacked structure of metal molybdenum and metal niobium (Mo / Nb), etc. These materials have a relatively higher absorption rate to infrared laser.

[0069] Figure 8 FIG. 4 is a schematic diagram of the cross-sectional structure of the first light-emitting portion in another exemplary embodiment. Figure 8 and Figure 7 The difference is that the shape of the first connection structure L1 is different. The rest of the content can refer to the above description. Figure 7 The description is not repeated here.

[0070] In an exemplary embodiment, the cross-sectional shape of the surface of the first connection structure L1 on the side away from the substrate 10, within a plane perpendicular to the substrate 10, is uneven, while the cross-sectional shape of the surface of the first connection structure L1 on the side closer to the substrate 10 can be straight. In this embodiment, by configuring the cross-sectional shape of the surface of the first connection structure L1 on the side away from the substrate 10, within a plane perpendicular to the substrate 10, to be uneven, the surface area of ​​the first connection structure L1 per unit area of ​​laser irradiation can be increased, thereby receiving more heat within the same irradiation time, improving the thermal conversion efficiency of the first connection structure L1, and enabling faster melting in the dotted line area.

[0071] and Figure 6 Compared with the solution in which the cross-sectional shape of the entire first connection structure L1 is set to an uneven shape, in this embodiment, after the first connection structure L1 is formed, the surface of the first connection structure L1 on the side away from the substrate 10 can be chemically treated, and the surface area of ​​the first connection structure L1 per unit irradiation area of ​​the laser can be increased by improving the roughness of the surface of the first connection structure L1 on the side away from the substrate 10.

[0072] In an exemplary embodiment, the surface roughness of the first connection structure L1 on the side away from the substrate 10 may be greater than the surface roughness of the first electrode 60 on the side away from the substrate 10 .

[0073] Figure 9 FIG. 4 is a schematic diagram of the cross-sectional structure of the first light-emitting portion in another exemplary embodiment. Figure 9 and Figure 7 The difference is that the shape of the first connecting structure L1 is different, and an absorbing portion S is also provided. The rest of the content can refer to the above description. Figure 7 The description is not repeated here.

[0074] In an exemplary embodiment, an absorbing portion S can be provided on a side of the first connecting structure L1 away from the substrate 10, the absorbing portion S being in contact with the first connecting structure L1 and having a laser absorption rate greater than that of the first connecting structure L1. In this embodiment, during the laser repair process, the laser is first irradiated onto the absorbing portion S, which generates heat after absorbing the laser, and the first connecting structure L1 is melted by the heat generated by the absorbing portion S. Since the absorbing portion S has a higher laser absorption rate and a higher heat conversion efficiency, the first connecting structure L1 can directly utilize the heat generated by the absorbing portion S for melting, and can melt faster in the dotted area, thereby indirectly improving the efficiency of the first connecting structure L1 in utilizing the laser. By providing the absorbing portion S, not only can the irradiation time during the laser repair process be reduced, but the power of the laser can also be reduced, thereby preventing other film layers of the display substrate from being damaged.

[0075] In exemplary embodiments, the material of the absorption portion S may include an organic material.

[0076] In an exemplary embodiment, the color of the absorbing portion S may be black. By setting the absorbing portion S to be black, the reflection of the laser light can be reduced to the greatest extent, and the efficiency of the absorbing portion S in absorbing the laser light can be improved.

[0077] In an exemplary embodiment, the Figures 6 to 9 For example, the parameters such as the material, cross-sectional shape and thickness of the first connection structure L1 can be optimized to obtain a better laser repair effect.

[0078] Figure 10 FIG. 1 is a schematic diagram of a cross-sectional structure of a display substrate in an exemplary embodiment, illustrating the structure of three sub-pixels in the display substrate. Figure 10 As shown, on a plane perpendicular to the display substrate, the display substrate may include a driving structure layer 10A disposed on a substrate 10, a light-emitting structure layer 10B disposed on a side of the driving structure layer 10A away from the substrate 10, and an encapsulation structure layer 10C disposed on a side of the light-emitting structure layer 10B away from the substrate 10. In some possible implementations, the display substrate may include other film layers, such as a color filter layer or a touch structure layer, etc., which is not limited in this disclosure.

[0079] In an exemplary embodiment, the substrate 10 may be a flexible substrate or a rigid substrate. The driving structure layer 10A may include a plurality of circuit units, each of which may include at least a pixel driving circuit configured to output a corresponding current to the light-emitting device. The light-emitting structure layer 10B may include a plurality of light-emitting units, each of which may include at least a light-emitting device configured to emit light of corresponding brightness in response to the current output by the pixel driving circuit of the sub-pixel in which it is located. The encapsulation structure layer 10C may include a stacked first encapsulation layer, a second encapsulation layer, and a third encapsulation layer. The first encapsulation layer and the third encapsulation layer may be made of inorganic materials, and the second encapsulation layer may be made of organic materials. The second encapsulation layer is disposed between the first encapsulation layer and the third encapsulation layer to form an inorganic material / organic material / inorganic material stacked structure, which can ensure that external water vapor cannot enter the light-emitting structure layer 10B.

[0080] The present disclosure also provides a display device comprising the display substrate described in any of the above embodiments. The display device may be any product or component with a display function, such as an OLED display, a QLED display, an LED display, a projector, a mobile phone, a tablet computer, a television, a monitor, a laptop computer, a digital photo frame, or a navigation system, but the present disclosure is not limited thereto.

[0081] Although the embodiments of the present disclosure have been shown and described above, it is understood that the above embodiments are illustrative and are not to be construed as limitations on the present disclosure. A person skilled in the art may change, modify, replace and vary the above embodiments within the scope of the present disclosure.

Claims

1. A display substrate, characterized in that: The invention comprises a substrate and a plurality of sub-pixels disposed on the substrate, each of the sub-pixels comprising a driving transistor, a maintenance portion, n connection structures, and n light-emitting portions, each of the light-emitting portions comprising a first electrode, where n is an integer greater than or equal to 2; the driving transistor is connected to the maintenance portion, one first electrode is connected to the maintenance portion via one connection structure, and different first electrodes are connected to different connection structures; wherein the connection structure and the first electrode satisfy at least one of the following conditions, such that the connection structure is more likely to be fused under laser irradiation: The efficiency of the connecting structure in absorbing laser light is greater than the efficiency of the first electrode in absorbing laser light; The thickness of the connecting structure in a direction perpendicular to the substrate is smaller than the thickness of the first electrode in a direction perpendicular to the substrate; The melting point temperature of the connection structure is lower than the melting point temperature of the first electrode.

2. The display substrate according to claim 1, wherein: The laser absorption efficiency of the connection structure is greater than the laser absorption efficiency of the first electrode, comprising: In a plane perpendicular to the substrate, the undulation degree of the cross-sectional shape of the connection structure is greater than the undulation degree of the cross-sectional shape of the first electrode.

3. The display substrate according to claim 2, wherein: In a plane perpendicular to the base, the cross-section of the connection structure is uneven.

4. The display substrate according to claim 3, wherein: In a plane perpendicular to the base, a cross-sectional shape of the connecting structure includes at least one arc convex toward one side of the base.

5. The display substrate according to claim 4, wherein: In a direction perpendicular to the substrate, a maximum height difference of a surface of the connection structure close to the substrate is greater than or equal to 0.9 micrometers and less than or equal to 1.1 micrometers.

6. The display substrate according to claim 2, wherein: In a plane perpendicular to the substrate, a cross-sectional shape of a surface of the connection structure away from the substrate is uneven.

7. The display substrate according to claim 1, wherein: The laser absorption efficiency of the connection structure is greater than the laser absorption efficiency of the first electrode, comprising: The absorption rate of the material of the connection structure to laser light is greater than the absorption rate of the material of the first electrode to laser light.

8. The display substrate according to claim 1, wherein: The thickness of the connection structure in a direction perpendicular to the substrate is smaller than the thickness of the first electrode in a direction perpendicular to the substrate, comprising: In a direction perpendicular to the substrate, the first electrode is a multi-layer composite structure, and the connecting structure is a single-layer structure.

9. The display substrate according to claim 1, wherein: The thickness of the connection structure in a direction perpendicular to the substrate is smaller than the thickness of the first electrode in a direction perpendicular to the substrate, comprising: In a direction perpendicular to the substrate, the connection structure and the first electrode are both multi-layer composite structures, and the film layers constituting the connection structure include at least one of the film layers constituting the first electrode.

10. The display substrate according to claim 1, wherein It also includes an absorption part, which is located on a side of the connection structure away from the substrate and contacts the connection structure; the absorption rate of the absorption part to the laser is greater than the absorption rate of the connection structure to the laser.

11. The display substrate according to claim 10, wherein: The material of the absorption part includes an organic material.

12. The display substrate according to claim 10, wherein: The color of the absorbing part is black.

13. The display substrate according to claim 1, wherein The display substrate includes a light-transmitting area and a display area, and the sub-pixels are arranged in the display area; the light-transmitting area is arranged to transmit light.

14. The display substrate according to claim 1, wherein The laser is an infrared laser.

15. A display device, characterized in that: The display substrate comprises the display substrate according to any one of claims 1 to 14.

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