A method for adapting impedance to protocol and a connector

Abstract

This invention relates to the field of connector technology, and more particularly to a method and connector for adaptive impedance matching based on a protocol, comprising the following steps: A. Embedding a quantum dot array in the dielectric layer of the connector signal transmission; B. Real-time detection of the communication protocol type accessed by the connector, generating a protocol identification signal; C. Retrieving the target impedance value Z from a pre-stored multi-protocol impedance database based on the protocol identification signal. target D. Applying a bias voltage to control the electron tunneling probability P of the quantum dot t E. Based on electron tunneling probability P t Change the equivalent dielectric constant ε eff The distributed capacitance value C is dynamically adjusted; F is used to correct the bias voltage through closed-loop feedback to achieve continuous impedance matching. This invention utilizes the electrically controlled dielectric properties of a quantum dot array to achieve real-time, continuous, and high-precision dynamic impedance matching in multi-protocol hot-switching scenarios, solving the problems of switching delay, mechanical loss, and narrow adjustment range inherent in traditional solutions. It breaks through the bottleneck of traditional data transmission rates, ensuring the reliability and performance of high-speed interconnects.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of connectors, in particular to a method for adaptively matching impedance according to a protocol and a connector. BACKGROUND

[0002] As the core component of cloud computing data centers, high-speed electronic connectors undertake the key task of high-speed signal transmission between servers and storage devices (such as supporting PCIe 5.0 / 6.0, SAS 4.0, etc. protocols). With the continuous rise of data transmission rates and the breakthrough of 56Gbps, signal integrity is facing unprecedented challenges. Among them, different high-speed serial communication protocols have strict and differentiated requirements for the characteristic impedance of transmission lines.

[0003] Traditional impedance matching solutions mainly rely on physically replacing termination resistors or using mechanical switch arrays. However, these solutions have significant defects: first, their switching response delay is high, making it difficult to meet the real-time requirements of protocol hot switching (hot plugging) scenarios in multi-protocol interface applications; second, mechanical contacts are prone to wear and tear due to frequent operation, causing impedance value drift, which seriously affects long-term stability and reliability.

[0004] Although some existing electrically controlled adjustment technologies (such as based on semiconductor switches or micro-electromechanical systems) can avoid mechanical wear and tear problems, they are still subject to inherent limitations: narrow impedance adjustment range, high power consumption, and generally unable to achieve continuous and precise dynamic control of dielectric parameters.

[0005] Therefore, in the face of the core problems of switching hysteresis, insufficient precision, and poor structural reliability of traditional solutions in high-speed multi-protocol scenarios, the industry urgently needs to develop an adaptive impedance matching technology that can real-time identify communication protocols and dynamically accurately adapt impedance, to break through the current bottleneck of data transmission rates and ensure the reliability and performance of high-speed interconnection. SUMMARY

[0006] The present application aims to overcome the shortcomings of the prior art and provide a method for adaptively matching impedance according to a protocol and a connector, which realizes real-time, continuous, and high-precision dynamic matching of impedance in multi-protocol hot switching scenarios through electrically controlled dielectric characteristics of quantum dot arrays, completely solving the problems of switching delay, mechanical wear and tear, and narrow adjustment range of traditional solutions. It breaks through the bottleneck of traditional data transmission rates and ensures the reliability and performance of high-speed interconnection.

[0007] To achieve the above-mentioned purpose, a method for adaptively matching impedance according to a protocol of the present application comprises the following steps:

[0008] A. Embed a quantum dot array in the medium layer of the connector signal transmission;

[0009] B. Real-time detection of the type of communication protocol connected by the connector, and generation of a protocol identification signal;

[0010] C. According to the protocol identification signal, the target impedance value Z is retrieved from the pre-stored multi-protocol impedance database target ;

[0011] D. Apply a bias voltage to regulate the electron tunneling probability P of the quantum dot t ;

[0012] E. Based on the electron tunneling probability P t , the equivalent dielectric constant ε is changed eff , and the distributed capacitance value C is dynamically adjusted;

[0013] F. Through closed-loop feedback correction of the bias voltage to achieve continuous impedance matching.

[0014] Preferably, the quantum dot array is embedded in the signal transmission medium layer in a hexagonal close-packed structure;

[0015] The quantum dot surface is modified with thiol molecules to form a coordination bonding layer, and the thiol molecules are oriented and arranged in the vertical direction of the medium layer with an orientation deviation of ≤5°, and the molecular dipole moment direction is parallel to the electric field vector;

[0016] The quantum dot surface is coated with a barrier layer to form a periodic barrier structure to suppress electron tunneling path overlap;

[0017] The periodic barrier structure uses a gradient doping process, and the thickness of the barrier layer along the signal transmission direction increases from 2nm to 5nm with a step increment of 0.5nm / μm, achieving linear regulation of the electron tunneling probability Pt;

[0018] The quantum dot array and the bias control circuit of the flexible printed circuit are integrated through eutectic bonding.

[0019] Preferably, in the step of regulating the electron tunneling probability P of the quantum dot by the bias voltage t , the control circuit performs phased voltage output:

[0020] In the initial matching stage, when the impedance deviation is monitored, a high-frequency pulse voltage with a frequency >1MHz is output, the polarization direction of the quantum dot is quickly changed by the alternating electric field, and the tunneling probability convergence is accelerated;

[0021] In the steady-state matching stage, when the impedance deviation , switch to 0-3V DC bias to maintain the stability of the quantum dot polarization state to achieve continuous impedance matching.

[0022] Preferably, the bias voltage is applied using a bipolar driving strategy, which includes:

[0023] Forward bias regulation mechanism, when detecting the need to increase the distributed capacitance value C, the bias control circuit of the flexible printed circuit applies a forward bias of 0V to +3V to the quantum dot array;

[0024] Negative bias regulation mechanism, when detecting the need to reduce the distributed capacitance value C, the bias control circuit of the flexible printed circuit applies a negative bias of -1V to 0V to the quantum dot array.

[0025] Preferably, the multi-protocol impedance database stores the standard impedance values Z of each communication protocol Protocol , and constructs an impedance temperature mapping function Z adjusted , the impedance temperature mapping function ,

[0026] Wherein, Z protocol is the protocol standard impedance value, including PCIe protocol: 85Ω, SAS protocol: 90Ω, InfiniBand protocol: 100Ω;

[0027] ΔT is the difference between the real-time temperature T of the connector real and the environmental benchmark temperature T base ;

[0028] K1 is the protocol impedance weight coefficient, with a value range of 0.95-1.05;

[0029] K2 is the temperature compensation coefficient, with a value range of -0.15Ω / ℃~+0.15Ω / ℃;

[0030] The impedance temperature mapping function Z adjusted corrects the equipment manufacturing tolerance through the protocol impedance weight coefficient K1, and linearly offsets the impedance drift caused by material thermal expansion through the temperature compensation coefficient K2, so that the actual impedance value of the connector within the working temperature range of -40℃~125℃ deviates from the target impedance value Z target ≤±1.5Ω, thereby ensuring that the signal eye opening degree is ≥0.7UI at a transmission rate of 56Gbps.

[0031] Preferably, when two or more communication protocol identification signals are detected simultaneously, a priority arbitration mechanism is started, and the target impedance value Z target is selected according to the preset protocol priority order of PCIe protocol>SAS protocol>InfiniBand protocol, and the bipolar bias circuit is driven for dynamic matching.

[0032] Preferably, when an unknown communication protocol type is detected, the impedance dynamic matching of the unknown communication protocol type is realized through the following steps:

[0033] C1. Real-time acquisition of time-domain waveform of unknown protocol transmission signal, extraction of signal characteristic parameters including eye height, eye width and time jitter value based on eye diagram analysis;

[0034] C2. According to the signal characteristic parameters, the optimal target impedance value Z optimized is matched through the multi-protocol impedance database;

[0035] C3. Generate a temporary impedance mapping entry to store the association between the signal characteristic parameters and Z optimized ;

[0036] C4. When the same signal characteristic parameters are detected in the subsequent protocol, Z optimized driven bipolar bias circuit for impedance matching;

[0037] At the moment of protocol switching, a transition pulse with a width of 5ns and an amplitude of 50% of the target impedance corresponding bias value is injected into the bias control circuit to suppress the signal ringing phenomenon in the impedance matching process and ensure that the eye opening degree attenuation is ≤10%.

[0038] Preferably, the reflection waveform of the connector transmission path is acquired in real time by the time domain reflectometer, and when the deviation absolute value of the measured impedance Z measured from the standard value Z protocol in the protocol library is ≥2Ω, the impedance tolerance range of the corresponding protocol in the protocol library is updated adaptively.

[0039] Preferably, it further comprises a multi-level failure protection mechanism, which is provided with a real-time monitoring layer, a rapid response layer and a system maintenance layer;

[0040] The real-time monitoring layer comprises the following steps:

[0041] The local temperature data is acquired in real time by a micro temperature sensor on the surface of the quantum dot, and the equivalent dielectric constant error is calibrated based on the formula ;

[0042] The quantum dot tunneling current is monitored in real time, and when the current mutates more than 20% within 1μs, the bias cut-off protection is triggered;

[0043] The rapid response layer comprises the following steps:

[0044] When the impedance matching operation is detected to be timed out for three times in succession, and the timeout time of each time is >10μs, the impedance matching mode is immediately switched to the preset 100Ω default impedance; the sound and light alarm device is activated to output a three-level beeping and red light flashing signal;

[0045] The signal transmission path is switched from the main quantum dot array to the standby quantum dot array within 100ns by a micro-electromechanical switch; at the same time, the array switching completion instruction is sent to the protocol identification module, and the current communication protocol parameters are locked;

[0046] The system maintenance layer comprises the following steps:

[0047] During the data transmission interval, a 70-130Ω full impedance range scan is periodically performed to detect the impedance drift amount caused by quantum dot aging; according to the size and direction of the impedance drift amount, the compensation coefficient K2 in the impedance temperature mapping function is inversely adjusted in proportion;

[0048] When the impedance drifts positively, the absolute value of the compensation coefficient K2 is reduced by a fixed proportion of 0.12;

[0049] When the impedance drifts negatively, the absolute value of the compensation coefficient K2 is increased by a fixed proportion of 0.12;

[0050] The adjustment amplitude is linearly related to the impedance drift amount, ensuring that the temperature drift compensation accuracy after aging is maintained within ±1.5Ω.

[0051] The application also provides a connector for performing the above-mentioned method of adaptively matching impedance according to protocols, comprising:

[0052] The medium layer is composed of a modified polyimide matrix, and a quantum dot array is embedded in the medium layer by laser etching a micro-pit array inside the medium layer for transmitting high-speed signals;

[0053] The protocol identification module detects the type of the accessed communication protocol in real time and generates a protocol identification signal;

[0054] The multi-protocol impedance database stores standard impedance values and impedance temperature mapping functions of various communication protocols, and outputs a target impedance value Z target according to the protocol identification signal;

[0055] The bias control circuit is connected to the quantum dot array and applies a bipolar bias voltage of 0V~+3V or -1V~0V to control the electron tunneling probability P t of the quantum dots;

[0056] The dynamic tuning module changes the equivalent dielectric constant ε t and dynamically adjusts the distributed capacitance value C based on the electron tunneling probability P eff of the quantum dot array to achieve impedance matching;

[0057] The closed-loop feedback circuit uses a fuzzy PID controller to correct the bias voltage in real time according to the impedance deviation ΔZ target to maintain the stability of Z ≤±1.5Ω.

[0058] The beneficial effects of the present application: through the electric control dielectric properties of quantum dot array, realize the real-time, continuous, high-precision dynamic matching of impedance in multi-protocol hot switching scene, completely solve the switching delay, mechanical loss and narrow adjustment range problem existing in traditional scheme. Break through the bottleneck of traditional data transmission rate, guarantee the reliability and performance of high-speed interconnection. BRIEF DESCRIPTION OF DRAWINGS

[0059] Figure 1 For a method of adaptively matching impedance according to a protocol of the present application, a step block diagram.

[0060] Figure 2 For a working principle schematic diagram of a connector of the present application. DETAILED DESCRIPTION

[0061] The present application will be described in detail below in combination with the drawings.

[0062] As Figure 1 shown, a method of adaptively matching impedance according to a protocol of the present application comprises the following steps:

[0063] A. Embed quantum dot array in the medium layer of the connector signal transmission; quantum dots produce quantum confinement effect under the action of electric field, and the electronic tunneling behavior changes the polarization response of the material, so as to control the overall dielectric constant of the medium layer. Eliminate mechanical wear and tear, prolong the service life of the device, and realize continuous electric control adjustment of dielectric parameters.

[0064] B. Real-time detection of communication protocol type accessed by the connector, generation of protocol identification signal; through analysis of transmission signal characteristics, the current communication protocol type is identified, and the corresponding digital identification signal is output. Support automatic switching in protocol hot plug scene, adapt to multi-protocol mixed environment.

[0065] C. According to the protocol identification signal, the target impedance value Z target is retrieved from the pre-stored multi-protocol impedance database; according to the protocol identification signal, the target impedance value Z target is retrieved from the pre-stored multi-protocol impedance database. Ensure that the impedance matching meets the protocol specification accuracy, and avoid real-time calculation delay.

[0066] D. Apply bias voltage to control the electronic tunneling probability P t of quantum dots; apply bias voltage to change the energy band structure of quantum dots, so that the electronic tunneling probability P t changes exponentially with voltage. Achieve nanosecond response speed, significantly reduce power consumption.

[0067] E. Change the equivalent dielectric constant ε t based on the electronic tunneling probability P eff , dynamically adjust the distributed capacitance value C; the electronic tunneling probability P tThe change of the equivalent dielectric constant ε directly regulates the equivalent dielectric constant ε eff , and further continuously changes the transmission line distributed capacitance value C. Impedance matching is achieved by adjusting the distributed parameters, supporting sub-ohm level precision control.

[0068] F. Impedance continuous matching is achieved by correcting the bias voltage through closed-loop feedback. The deviation of the actual impedance from the target impedance is compared in real time, and the bias voltage is dynamically corrected to achieve continuous matching. Automatically compensate for environmental interference, maintain long-term stability and high precision.

[0069] Through the electrically controlled dielectric properties of the quantum dot array, real-time, continuous, and high-precision dynamic matching of impedance in multi-protocol hot switching scenarios is achieved, completely solving the switching delay, mechanical wear, and narrow adjustment range problems existing in traditional solutions. Breakthrough the bottleneck of traditional data transmission rate, guarantee the reliability and performance of high-speed interconnection.

[0070] When the high-speed electronic connector is connected to the device, the connector real-time detection module automatically identifies the current communication protocol type by analyzing the physical characteristics of the transmission signal and generates a corresponding digital protocol identification signal. The control unit immediately retrieves the target impedance value Z target from the pre-stored multi-protocol impedance database according to the identification signal. Subsequently, the digital-to-analog converter generates an accurate bias voltage applied to the quantum dot array embedded in the dielectric layer, which changes the quantum dot energy band structure to cause the electron tunneling probability P t to change exponentially, and further continuously regulates the equivalent dielectric constant ε eff of the dielectric layer. The dynamic change of the equivalent dielectric constant ε eff directly affects the transmission line distributed capacitance value C, and the impedance value is adjusted according to the physical relationship between impedance and capacitance. In this process, the time domain reflectometer continuously samples the actual impedance, and the control unit compares the measured value with the target value in real time, and dynamically corrects the bias voltage through a closed-loop feedback algorithm to compensate for the deviation, finally making the impedance stable and maintained within the accuracy range required by the target protocol. When the protocol is hot switched, the system can complete the whole process from protocol re-identification to impedance re-matching within 500 nanoseconds, with no mechanical action and power consumption below 5 milliwatts, completely solving the problems of switching delay, mechanical wear, and insufficient adjustment precision in traditional solutions.

[0071] The quantum dot array of the present embodiment is embedded in the signal transmission dielectric layer in a hexagonal close-packed structure; the quantum dots are embedded in the dielectric layer in a three-dimensional closest packing manner, maximizing the quantum dot density per unit volume. Improve the dielectric constant regulation sensitivity and expand the impedance adjustment range.

[0072] The thiol molecule is oriented and arranged in a vertical medium layer direction with an orientation deviation of ≤5°, and the molecular dipole moment direction is parallel to the electric field vector; the thiol molecule is vertically bonded to the quantum dot surface through the sulfur atom coordination bond, the molecular long axis has a deviation of ≤5° from the normal line of the medium layer, and the dipole moment direction is parallel to the electric field.

[0073] The quantum dot is a CdSe nanocrystal with a diameter of 5nm-10nm, and the array spacing is ≤20nm.

[0074] The general formula of the thiol molecule is HS-R, and the R group is an alkyl chain (C4-C 12 );

[0075] The sulfur atom (-SH) forms a Cd-S coordination bond with the cadmium ion (Cd 2+ ) on the surface of the quantum dot, and the bond energy is ≥210kJ / mol;

[0076] The alkyl chain (R) extends outward to form a molecular dipole moment (μ=1.8D-2.4D), which enhances the sensitivity of the electric field response.

[0077] The quantum dot surface is coated with a barrier layer to form a periodic barrier structure to suppress the overlap of electron tunneling paths; the periodic barrier structure uses a gradient doping process, and the thickness of the barrier layer along the signal transmission direction increases from 2nm to 5nm, with a step increment of 0.5nm / μm, realizing linear regulation of the electron tunneling probability Pt;

[0078] Specifically, the barrier layer is an aluminum oxide barrier layer coated on the surface of the quantum dot, with a thickness of 2nm-5nm, so that the barrier layer is coated on the surface of the coordination bonding layer.

[0079] According to the quantum tunneling effect, the electron tunneling probability P t is negatively related to the thickness d of the barrier layer, and the equation is: , wherein P t is the electron tunneling probability; d is the thickness of the barrier layer; is the electron mass; is the barrier height, ; is the reduced Planck constant (e.g., 1.05×10 -34 J·s).

[0080] When the thickness d of the barrier layer is small (input end), the electron tunneling probability P t increases, the equivalent dielectric constant ε eff increases, and the distributed capacitance value C increases;

[0081] When the thickness d of the barrier layer is large (output end), the electron tunneling probability P tdecrease, equivalent permittivity ε eff decrease, distributed capacitance value C is decreased. The electron tunneling probability P is offset by the electric field strength decay through the barrier layer thickness d gradient t linearly along the transmission path, realizing continuous adjustable impedance.

[0082] The bias control circuit of the quantum dot array and the flexible printed circuit is integrated through eutectic bonding. The interface contact resistance is eliminated, and the bias control precision and mechanical reliability are improved.

[0083] Among them: the bonding material is Au-Sn alloy (melting point 280℃), shear strength ≥25MPa;

[0084] The bonding interface is embedded with an insulating SiO2 nanocolumn array (diameter ≤100nm, height 100nm, spacing 200nm). The SiO2 nanocolumn array makes the parasitic capacitance of the bonding interface ≤0.05pF, and the leakage current ≤0.1μA@3V, forming a physical isolation barrier to prevent leakage current.

[0085] The step of bias voltage regulation of the quantum dot electron tunneling probability P of the embodiment t , the control circuit executes phased voltage output:

[0086] Initial matching stage, when the impedance deviation is monitored, output high-frequency pulse voltage with frequency >1MHz, quickly change the polarization direction of the quantum dot through alternating electric field, accelerate the convergence of tunneling probability; realize nanosecond-level impedance initial matching.

[0087] Steady-state matching stage, when the impedance deviation , switch to 0-3V DC bias to maintain the stability of the quantum dot polarization state to realize continuous impedance matching; avoid continuous polarization energy consumption, and ensure long-term stable impedance matching.

[0088] The bias voltage of the embodiment adopts a bipolar driving strategy, which includes:

[0089] Forward bias regulation mechanism, when it is detected that the distributed capacitance value C needs to be increased, the bias control circuit of the flexible printed circuit applies a forward bias of 0V to +3V to the quantum dot array; accurately increase the equivalent permittivity, realize forward continuous adjustment of the capacitance value.

[0090] Specifically, the forward bias reduces the effective barrier height of the quantum dot, increases the electron tunneling probability P t ; the increased electron tunneling probability P t leads to an increase in the equivalent permittivity ε eff , thereby increasing the distributed capacitance value C, realizing forward adjustment of the capacitance value.

[0091] The negative bias regulation mechanism, when detecting the need to reduce the distributed capacitance value C, applies a negative bias of-1V to 0V to the quantum dot array through the bias control circuit of the flexible printed circuit. Precise reduction of the equivalent dielectric constant realizes negative continuous adjustment of the capacitance value.

[0092] Specifically, the negative bias increases the effective potential barrier height of the quantum dot, reduces the electron tunneling probability P t ; the reduced electron tunneling probability P t causes the equivalent dielectric constant ε eff to decrease, thereby reducing the distributed capacitance value C and realizing negative adjustment of the capacitance value.

[0093] Through the synergistic regulation of positive bias and negative bias, bidirectional continuous adjustment of the distributed capacitance value C is realized, with a change range of ±35%, and the impedance matching range is expanded to 70Ω-130Ω.

[0094] The positive bias increases the capacitance, and the negative bias reduces the capacitance, realizing bidirectional one-hundredth precision control of the capacitance value. The alternating application of positive and negative voltages neutralizes the ion migration effect, prolonging the service life of the quantum dot array by ten times. In the zero bias state, the current path is completely cut off, and the steady-state power consumption is reduced to the nanowatt level.

[0095] The multi-protocol impedance database of the embodiment stores the standard impedance values Z Protocol of each communication protocol, and constructs an impedance temperature mapping function Z adjusted , the impedance temperature mapping function ,

[0096] wherein Z protocol is the protocol standard impedance value, and the protocol standard impedance value includes PCIe protocol: 85Ω, SAS protocol: 90Ω, and InfiniBand protocol: 100Ω; the protocol matching reference value is provided to ensure that the impedance conforms to international standard specifications.

[0097] ΔT is the difference between the real-time temperature T real of the connector and the environmental reference temperature T base ;

[0098] K1 is the protocol impedance weight coefficient, and the value range is 0.95-1.05;

[0099] K2 is the temperature compensation coefficient, and the value range is-0.15Ω / ℃~+0.15Ω / ℃;

[0100] The impedance temperature mapping function Z adjusted corrects the equipment manufacturing tolerance through the protocol impedance weight coefficient K1, and at the same time linearly offsets the impedance drift caused by material thermal expansion through the temperature compensation coefficient K2, so that the actual impedance value of the connector is relative to the target impedance value Z targetThe deviation is ≤ ±1.5Ω, thus ensuring a signal eye diagram opening ≥ 0.7UI at a transmission rate of 56Gbps. This achieves automatic compensation for temperature drift effects, maintaining the target impedance value Z. target Stability under all operating conditions.

[0101] In this embodiment, when two or more communication protocol identifier signals are detected simultaneously, a priority arbitration mechanism is activated, and the target impedance value Z is selected according to the preset protocol priority order: PCIe protocol > SAS protocol > InfiniBand protocol. target It drives a bipolar bias circuit for dynamic matching, avoiding impedance matching chaos caused by protocol conflicts and ensuring deterministic system response. Enforcing priority rules eliminates multi-protocol contention, with decision latency below 20 nanoseconds. It permanently assigns the highest priority to the PCIe protocol, ensuring zero interruption for critical cloud computing services. The entire arbitration-to-execution process takes 50 nanoseconds, meeting the real-time requirements of hot-plugging protocols.

[0102] In this embodiment, when detecting an unknown communication protocol type, dynamic impedance matching for the unknown communication protocol type is achieved through the following steps:

[0103] C1. Real-time acquisition of time-domain waveforms of signals transmitted using unknown protocols, and extraction of signal feature parameters based on eye diagram analysis, including eye diagram height, eye diagram width, and time jitter value; specifically, eye diagram analysis acquires time-domain waveforms using a 16GSa / s ADC chip, and extracts feature parameters using a convolutional neural network (CNN) processor. A quantization model of the unknown protocol signal features is established to provide a data foundation for impedance matching.

[0104] C2. Based on the signal characteristic parameters, match the optimal target impedance value Z using a multi-protocol impedance database. optimized It enables adaptive and real-time matching of unknown protocols, avoiding delays caused by manual configuration.

[0105] C3. Generate temporary impedance mapping entries and store signal characteristic parameters and Z. optimized The relationship between them;

[0106] C4. When a protocol with the same signal characteristic parameters is subsequently detected, Z will be automatically invoked. optimized It drives a bipolar bias circuit for impedance matching; when the same protocol reappears, it directly calls the historical best value, which increases the matching speed by a thousand times.

[0107] At the moment of protocol switching, a transition pulse with a width of 5ns and an amplitude of 50% of the bias voltage value corresponding to the target impedance is injected into the bias control circuit to suppress signal ringing during impedance matching and ensure that the eye diagram opening attenuation is ≤10%.

[0108] In this embodiment, the reflected waveform of the connector transmission path is acquired in real time using a time-domain reflectometer (TDR). When the measured impedance Z...measured When the absolute value of the deviation of the protocol library standard value Z protocol from the impedance tolerance range of the corresponding protocol in the protocol library is greater than or equal to 2Ω, the impedance tolerance range of the corresponding protocol in the protocol library is adaptively updated.

[0109] The embodiment also includes a multi-level failure protection mechanism, which is provided with a real-time monitoring layer, a rapid response layer, and a system maintenance layer.

[0110] The real-time monitoring layer includes the following steps:

[0111] The local temperature data is collected in real time by a micro temperature sensor on the surface of the quantum dot layer (the size of the micro temperature sensor is less than or equal to 0.1 mm²), and the equivalent dielectric constant error is calibrated based on the formula

[0112] The quantum dot tunneling current is monitored in real time, and when the current suddenly changes by more than 20% within 1μs, the bias cut-off protection is triggered; the millisecond-level risk warning prevents quantum dot thermal breakdown.

[0113] The rapid response layer includes the following steps:

[0114] When the impedance matching operation is detected to be timed out for three times in succession, and the timeout time of each time is greater than 10μs, the impedance matching mode is immediately switched to the preset 100Ω default impedance; the audible and visual alarm device is activated to output a three-level beeping and red light flashing signal;

[0115] The signal transmission path is switched from the main quantum dot array to the standby quantum dot array within 100ns by a micro-electromechanical switch; at the same time, an array switching completion instruction is sent to the protocol identification module to lock the current communication protocol parameters; hardware-level fault emergency is realized to ensure zero interruption of communication.

[0116] The system maintenance layer includes the following steps:

[0117] During the data transmission interval, a 70-130Ω full impedance range scanning is periodically performed to detect the impedance drift caused by quantum dot aging; according to the size and direction of the impedance drift, the compensation coefficient K2 in the impedance temperature mapping function is inversely adjusted in proportion;

[0118] When the impedance drifts positively, the absolute value of the compensation coefficient K2 is reduced by a fixed proportion of 0.12;

[0119] When the impedance drifts negatively, the absolute value of the compensation coefficient K2 is increased by a fixed proportion of 0.12;

[0120] The adjustment amplitude is linearly related to the impedance drift, ensuring that the aging temperature drift compensation accuracy is maintained within ±1.5Ω. The aging drift is automatically compensated to maintain lifelong accuracy.

[0121] ​The real-time monitoring layer and the fast response layer achieve microsecond-level linkage through a high-speed comparator and a hardware timer (such as the TI TLV3202 comparator). The system maintenance layer is automatically activated during communication intervals using the MCU's low-power mode (such as the STM32G4's Stop 2 mode with power consumption <5μA).

[0122] Preferably, closed-loop feedback control includes the following collaborative mechanisms:

[0123] Core control layer:

[0124] A fuzzy PID controller is used to dynamically adjust the proportional coefficient K based on the real-time impedance deviation ΔZ. p K p The value increases non-linearly with increasing |ΔZ|;

[0125] When |ΔZ|>5Ω, particle swarm optimization is enabled to accelerate convergence, and the initial particle positions are set to the historically optimal matching parameters; this achieves a convergence speed improvement of over 50% in scenarios with large deviations. The core control layer is an ST STM32H7 series MCU (integrating an FPU and AI accelerator).

[0126] Predictive compensation layer:

[0127] An integrated LSTM prediction module analyzes historical impedance data sequences to predict quantum dot aging trends and compensates for the decay of the polarization coefficient α in advance, reducing impedance fluctuations by 60% over the lifetime. The prediction compensation layer is an NVIDIA Jetson Nano edge computing module.

[0128] Real-time monitoring layer:

[0129] The equivalent dielectric constant ε is derived by inversely calculating the quantum dot tunneling current. eff It replaces traditional time-domain reflectometer (TDR) measurements, eliminating TDR measurement delay and reducing response time to 200ns. The real-time monitoring layer utilizes the TI INA828 high-precision current sensing amplifier.

[0130] Security protection layer:

[0131] When the ambient temperature is below -30 degrees Celsius or above 100 degrees Celsius, a safety mode is activated to lock the bias output to the optimal quiescent operating point of 1.5±0.1V; this prevents quantum dot dielectric collapse under extreme conditions. The safety protection layer is a combination of an ADIADT7420 temperature sensor and a voltage reference source.

[0132] Anti-interference transmission layer:

[0133] The closed-loop control signal is transmitted through a differential shielded microstrip line, and the ground layer integrates a frequency selective surface to suppress high-frequency crosstalk and improve the signal-to-noise ratio by ≥15 dB. The anti-interference transmission layer is made of Rogers RO4350B high-frequency PCB material.

[0134] As Figure 2 shown, the other aspect also provides a connector for performing the above-mentioned method of adaptively matching impedance according to protocols, comprising:

[0135] The dielectric layer is composed of a modified polyimide matrix, and has a dielectric constant of 3.2 and a loss tangent ≤0.002@10GHz. The dielectric layer has a quantum dot array embedded in the array of micro-pits etched by laser inside, for transmitting high-speed signals. The quantum dot array is embedded in the signal transmission path as a dielectric constant adjustable unit to provide a low-loss signal transmission channel.

[0136] The protocol identification module detects the type of the accessed communication protocol in real time and generates a protocol identification signal. The protocol identification module detects the type of the communication protocol accessed through the real-time detection interface and generates an identification signal, realizing the basic identification function of multi-protocol compatibility. The protocol identification module is a high-speed signal analysis chip, such as Keysight M8040A series Teledyne LeCroy Sierra M328 or Xilinx Versal ACAP Intel Stratix 10 GX series.

[0137] The multi-protocol impedance database stores the standard impedance values and impedance temperature mapping functions of each communication protocol, and outputs the target impedance value Z target according to the protocol identification signal; wherein the specific communication protocol standard and impedance value are: PCIe protocol, the impedance value of PCIe protocol is: 85Ω, SAS protocol, the impedance value of SAS protocol is: 90Ω, InfiniBand protocol, the impedance value of InfiniBand protocol is: 100Ω. The protocol standard impedance value and temperature compensation function are stored, and the target impedance Z target is output according to the protocol identification, to provide an accurate impedance reference value. The multi-protocol impedance database is an embedded non-volatile memory, such as Renesas MONOS process-TSMC 40nm eFlash IP or Everspin EM064LX-Samsung 28nm eMRAM.

[0138] The bias control circuit is connected to the quantum dot array and applies a bipolar bias voltage of 0V~+3V or -1V~0V to regulate the electron tunneling probability P t of the quantum dots; the bipolar bias voltage is applied to regulate the electron tunneling probability P t of the quantum dots, realizing a mechanical contact-free electric control adjustment mechanism.

[0139] Dynamic tuning module, based on electron tunneling probability P through Al2O3 gradient barrier layer of quantum dot array t Change equivalent dielectric constant ε eff , dynamically adjust distributed capacitance value C, realize impedance matching; Break through the adjustment range limit of traditional scheme.

[0140] Closed loop feedback circuit, using fuzzy PID controller (Proportional-Integral-Derivative Controller) to correct bias voltage according to impedance deviation ΔZ in real time, maintain Z target Stability of fluctuation ≤±1.5Ω. Reach impedance steady error control.

[0141] When working, when the high-speed connector accesses PCIe protocol equipment, the protocol recognition module detects the physical layer signal characteristics in real time and outputs the identification signal, and the multi-protocol impedance database calls the target impedance value 85Ω and the temperature compensation parameter according to this; The bias control circuit applies an initial bipolar bias (such as +1.5V) to the quantum dot array, changes the equivalent dielectric constant ε of the Al2O3 gradient barrier layer by adjusting the electron tunneling probability P t Change the equivalent dielectric constant ε of the Al2O3 gradient barrier layer eff , make the distributed capacitance of the dielectric layer change dynamically to approximate the target impedance Z target ; The fuzzy PID controller in the closed loop feedback circuit continuously collects the actual impedance deviation ΔZ, and corrects the bias voltage in real time (for example, increase 0.2V when ΔZ>1.5Ω), and finally realize the impedance stability to 85±1.5Ω within 20μs, complete the hot plug adaptive matching of PCIe 5.0 / 6.0 protocol.

[0142] The above is only the preferred embodiment of the present application, for those skilled in the art, according to the idea of the present application, the specific implementation and application range will be changed, the content of the description should not be understood as the limitation of the present application.

Claims

1. A method of adapting impedance matching according to a protocol, characterized by, Comprising the following steps: A. Embed the quantum dot array in the medium layer of the connector signal transmission; B. Real-time detection of the communication protocol type accessed by the connector, generating a protocol identification signal; C. retrieving the target impedance value Z from a pre-stored multi-protocol impedance database according to the protocol identification signal target ; D. Applying a bias voltage to regulate the probability of electron tunneling P of the quantum dot t ; E. Based on the probability of electron tunneling P t Changing the equivalent dielectric constant ε eff , dynamically adjusting the distributed capacitance value C; F. Impedance continuous matching is realized by closed-loop feedback correction of bias voltage; The multi-protocol impedance database stores standard impedance values Z of each communication protocol Protocol and constructs an impedance-temperature mapping function Z adjusted , impedance-temperature mapping function , Wherein, Z protocol is a protocol standard impedance value, and the protocol standard impedance value includes PCIe protocol: 85Ω, SAS protocol: 90Ω, and InfiniBand protocol: 100Ω. ΔT is the difference between the connector real time temperature T real and the ambient reference temperature T base ​ K1 is the protocol impedance weight coefficient, with a value range of 0.95-1.05; K2 is the temperature compensation coefficient, with a value range of -0.15Ω / ℃~+0.15Ω / ℃; The impedance temperature mapping function Z adjusted The protocol impedance weight coefficient K1 corrects the equipment manufacturing tolerance, and the temperature compensation coefficient K2 linearly offsets the impedance drift caused by the thermal expansion of the material, so that the deviation of the actual impedance value from the target impedance value Z target is ≤±1.5Ω within the working temperature range of -40°C to 125°C, thereby ensuring that the signal eye opening is ≥0.7UI at a transmission rate of 56Gbps. When two or more communication protocol identification signals are detected simultaneously, a priority arbitration mechanism is started, and a target impedance value Z is selected according to a preset protocol priority order of PCIe protocol>SAS protocol>InfiniBand protocol target The driving bipolar bias circuit is dynamically matched. When detecting unknown communication protocol types, the following steps are taken to realize impedance dynamic matching of unknown communication protocol types: C1. Real-time acquisition of time-domain waveform of unknown protocol transmission signal, based on eye diagram analysis to extract signal characteristic parameters, including eye height, eye width and time jitter value; C2. According to the signal characteristic parameters, the optimal target impedance value Z is matched through a multi-protocol impedance database optimized ; C3. generating a temporary impedance mapping entry storing the association of the signal characteristic parameters with Z optimized ; C4. Upon subsequent detection of the same signal characteristic parameter of the protocol, automatically invoke Z optimized driving the bipolar bias circuit for impedance matching; At the moment of protocol switching, a transition pulse with a width of 5ns and an amplitude of 50% of the target impedance corresponding bias voltage is injected into the bias control circuit to suppress the signal ringing phenomenon in the impedance matching process and ensure that the eye opening degree attenuation is ≤10%.

2. The method of claim 1, wherein, The quantum dot array is embedded in the signal transmission medium layer in a hexagonal close-packed structure; The quantum dot surface is modified with thiol molecules to form a coordination bonding layer, and the thiol molecules are oriented and arranged vertically to the medium layer, with an orientation deviation of ≤5°, and the molecular dipole moment direction is parallel to the electric field vector; The quantum dot surface is coated with a barrier layer to form a periodic barrier structure to suppress the overlap of electron tunneling paths; The periodic barrier structure adopts a gradient doping process, and the thickness of the barrier layer along the signal transmission direction increases from 2nm to 5nm, with a step increment of 0.5nm / μm, realizing linear regulation of the electron tunneling probability Pt; The quantum dot array and the bias control circuit of the flexible printed circuit are integrated through eutectic bonding.

3. A method of adapting impedance to a protocol according to claim 1 or 2, characterized in that, Controlling quantum dot electron tunneling probability P by bias voltage t In the step of regulating the quantum dot electron tunneling probability P by bias voltage, the control circuit performs a phased voltage output: In the initial matching stage, when the impedance deviation is monitored A high-frequency pulse voltage with a frequency of >1 MHz is output to quickly change the polarization direction of the quantum dots through an alternating electric field and accelerate the convergence of the tunneling probability. Steady state matching phase, when impedance deviation 0-3V DC bias is switched to maintain the quantum dot polarization state stable to achieve impedance consistent matching.

4. The method of claim 1, wherein, The bias voltage is applied using a bipolar driving strategy, which includes: Positive bias regulation mechanism, when it is detected that the distributed capacitance value C needs to be increased, the bias control circuit of the flexible printed circuit applies a positive bias of 0V to +3V to the quantum dot array; Negative bias regulation mechanism, when it is detected that the distributed capacitance value C needs to be reduced, the bias control circuit of the flexible printed circuit applies a negative bias of -1V to 0V to the quantum dot array.

5. The method of claim 1, wherein, The reflection waveform of the connector transmission path is collected in real time by the time domain reflectometer, and when the measured impedance Z measured deviates from the protocol library standard value Z protocol by an absolute value of ≥2Ω, the impedance tolerance range of the corresponding protocol in the protocol library is adaptively updated.

6. The method of adapting impedance to match according to a protocol of claim 1, wherein, It also includes a multi-level failure protection mechanism, which is provided with a real-time monitoring layer, a rapid response layer and a system maintenance layer; The real-time monitoring layer includes the following steps: The local temperature data is collected in real time by the micro temperature sensor on the surface of the quantum dot, and the formula Calibrating the equivalent dielectric constant error; Real-time monitoring of quantum dot tunneling current, when the current mutates more than 20% of the threshold within 1μs, triggering bias cutoff protection; The rapid response layer includes the following steps: Detecting that the impedance matching operation is timed out for three consecutive times, and each timeout time is >10μs; immediately switch the impedance matching mode to the preset 100Ω default impedance; activate the audible and visual alarm device to output a three-level beep and red light flashing signal; Switch the signal transmission path from the main quantum dot array to the standby quantum dot array within 100ns through a micro-electromechanical switch; at the same time, send an array switching completion instruction to the protocol identification module to lock the current communication protocol parameters; The system maintenance layer includes the following steps: During the data transmission interval, a 70-130Ω full impedance range scan is periodically performed to detect the impedance drift caused by quantum dot aging; according to the size and direction of the impedance drift, the compensation coefficient K2 in the impedance temperature mapping function is inversely adjusted in proportion; When the impedance drifts positively, the absolute value of the compensation coefficient K2 is reduced by a fixed proportion of 0.12; When the impedance drifts negatively, the absolute value of the compensation coefficient K2 is increased by a fixed proportion of 0.12; The adjustment amplitude is linearly related to the impedance drift, ensuring that the temperature drift compensation accuracy after aging is maintained within ±1.5Ω.

7. A connector for performing the method of adapting impedance according to a protocol of any one of claims 1 to 6, characterized in that, It comprises: A medium layer composed of a modified polyimide matrix, with a quantum dot array embedded in the medium layer through laser etching of a micro-pit array, for transmitting high-speed signals; A protocol identification module that detects the type of communication protocol accessed in real time and generates a protocol identification signal; A multi-protocol impedance database stores standard impedance values and impedance temperature mapping functions for each communication protocol, and outputs a target impedance value Z according to a protocol identification signal target ; A bias control circuit is connected to the quantum dot array to apply a bipolar bias voltage of 0V to +3V or -1V to 0V to control the electron tunneling probability P of the quantum dot t ; A dynamic tuning module based on electron tunneling probability P through the Al2O3 gradient barrier layer of the quantum dot array t Change the equivalent dielectric constant ε eff , dynamically adjust the distributed capacitance value C, and realize impedance matching; The closed loop feedback circuit uses a fuzzy PID controller to correct the bias voltage in real time according to impedance deviation ΔZ, so as to maintain Z target Stability of fluctuation ≤±1.5Ω.

Images