Chip irradiation damage identification system and method based on pulse laser cooperative scanning

Abstract

The application provides a chip irradiation damage identification system and method based on pulse laser cooperative scanning, the system comprises: a pulse laser output module and a cooperative control module; the pulse laser output module is used for coupling laser light paths output by multiple pulse laser light sources into a single laser light path; the system comprises a pulse laser irradiation state and a damage identification state, and the cooperative control module is used for switching the working state of the system; when switched to the pulse laser irradiation state, the pulse laser output module is started, a displacement table is controlled to drive a sample table on which a chip is placed to move, so that the chip moves in a set scanning range with a set scanning precision; when switched to the damage identification state, an electromagnetic shield and a high-sensitivity CCD camera are started, a bias voltage is applied to the chip, the light emission of the chip is identified, and the irradiation sensitive point of the chip is recorded. The application can efficiently obtain the damage distribution of the chip before and after pulse laser irradiation.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of chip irradiation effect analysis, and particularly relates to a chip irradiation damage identification system and method based on pulse laser cooperative scanning. BACKGROUND

[0002] Electronic devices for spaceflight, especially chips for spaceflight, must have sufficient anti-irradiation capability to operate stably for a long time in a complex space environment. Therefore, the analysis and testing of their reliability must fully consider the performance changes of the chips under space irradiation conditions. Space irradiation effects mainly include single particle effects and total dose effects, among which single particle effects are particularly critical: when a single high-energy space particle hits a chip, the excess carriers generated by ionization can cause device performance degradation or even complete failure. Single particle effects can be further divided into single event upset, single event transient, single event burnout, and single event latchup. However, due to the inability to directly place chips in real space environments for long-term testing, the current evaluation of their anti-single particle effect capability can only rely on heavy ion beams generated by ground accelerators for simulation. This scheme faces multiple limitations such as scarce equipment resources, high usage costs, complex operation, and poor operability, making it difficult to meet large-scale and refined research needs.

[0003] To address the above challenges, researchers have developed a test method that uses pulse laser simulation of heavy ion irradiation to study single particle effects. This method simulates the occurrence of single particle events by generating local ionization effects on the chip surface with a high-energy laser beam. However, since the irradiation area of heavy ion irradiation is fixed, it can usually only cover the entire chip, making it difficult to achieve precise irradiation of specific sensitive areas. Therefore, in actual research, researchers not only need to locate the irradiation sensitive areas of the chip to carry out targeted reinforcement design, but also must determine whether new defects or damages have been produced inside the chip after irradiation and further locate the positions of these damages, in order to deeply understand the damage and degradation mechanisms under single particle irradiation, and ultimately guide the irradiation reinforcement design of the chip.

[0004] Although the pulse laser simulation technology provides a viable alternative to heavy ion irradiation, the current pulse laser test device still has significant defects: on the one hand, it is difficult to perform automatic scanning irradiation of the chip globally, over a large area, and with high precision, resulting in low testing efficiency; on the other hand, there is a lack of effective means to accurately evaluate the damages and defects produced inside the chip after laser irradiation, and it is even more difficult to achieve precise positioning of these defects. These technical bottlenecks severely restrict the application potential of the pulse laser simulation method in the reliability research of spaceflight chips. Therefore, it is urgent to develop an advanced pulse laser irradiation technology with full-chip scanning capability and damage identification function. SUMMARY

[0005] The application provides a chip irradiation damage identification system and method based on pulse laser cooperative scanning, and solves the problems of low test efficiency and precision of existing pulse laser test devices.

[0006] To solve the above technical problems, the application provides a chip irradiation damage identification system based on pulse laser cooperative scanning, which comprises:

[0007] a pulse laser output module and a cooperative control module;

[0008] The pulse laser output module couples laser light paths output by multiple pulse laser light sources into a single laser light path.

[0009] The system comprises a pulse laser irradiation mode and a damage identification mode, and the cooperative control module is used for switching the working mode of the system.

[0010] When the pulse laser irradiation mode is switched to, the cooperative control module starts the pulse laser output module, controls the displacement table to move the sample table on which the chip is placed, and makes the chip move in a set scanning range with a set scanning precision.

[0011] When the damage identification mode is switched to, the cooperative control module starts the electromagnetic shield and a high-sensitivity charge-coupled device (CCD) camera, applies a bias voltage to the chip, identifies the light-emitting condition of the chip, and records the irradiation sensitive point of the chip.

[0012] Preferably, the pulse laser output module comprises multiple pulse laser light sources, a multi-light-path coupling module, a laser energy attenuation module and a light focusing output module, the multi-light-path coupling module couples laser light paths output by the multiple pulse laser light sources into a single incident light path, the laser energy attenuation module adjusts the single incident light path, and the light focusing output module focuses the adjusted single incident light path into a pulse laser beam.

[0013] Preferably, the displacement table comprises a nano piezoelectric displacement table and a stepper motor displacement table, the nano piezoelectric displacement table is arranged above the stepper motor displacement table, and the sample table is arranged above the nano piezoelectric displacement table; when the displacement table is used to move the sample table on which the chip is placed, the sample table is first moved to a target area by the stepper motor displacement table, and then scanned in the target area by the nano piezoelectric displacement table.

[0014] Preferably, the displacement table further comprises a horizontal plane calibration module, and the horizontal plane calibration module is used for adjusting the plane of the sample table to be horizontal.

[0015] Preferably, the cooperative control module switches the working mode of the system through a movable beam splitter.

[0016] The application further provides a chip irradiation damage identification method based on pulse laser cooperative scanning, which is realized based on the chip irradiation damage identification system based on pulse laser cooperative scanning and comprises the following steps.

[0017] Step S1: fixing a chip to be tested on a sample table, adjusting a plane of the sample table to be horizontal by using a horizontal plane calibration module, and adjusting a height of a light source focusing output module until light rays of the visible light source are focused on a sample surface;

[0018] Step S2: switching the system to a damage identification mode by using a cooperative control module, applying a bias voltage to the chip, identifying a photo-induced sensitive light emitting condition of the chip, and recording an initial sensitive position of the chip;

[0019] Step S3: switching the system to a pulse laser irradiation mode, selecting a wavelength of a pulse laser light source output by a pulse laser output module, adjusting a laser energy attenuation unit to a maximum attenuation gear, adjusting a size of the bias voltage applied to the chip, starting a displacement table, and moving the sample table on which the chip is placed in a set scanning range with a set scanning precision by using the displacement table;

[0020] Step S4: in the scanning process, if a photoelectric current value of a certain position of the chip is suddenly changed, stopping the scanning, recording coordinates, laser energy, wavelength and current abnormal data of the current position, changing the energy and the wavelength of the laser output by the pulse laser output module, and repeating steps S1 to S3, or entering step S5;

[0021] Step S5: turning off the pulse laser output module, switching the system to the damage identification mode again, identifying the photo-induced sensitive light emitting condition of the chip, recording sensitive and damage positions of the chip after the irradiation scanning, and comparing the sensitive and damage positions with the initial sensitive position obtained in step S2.

[0022] Preferably, the moving of the sample table in the set scanning range with the set scanning precision by using the displacement table in step S3 comprises the following steps.

[0023] Step S31: dividing the set scanning range into a plurality of scanning areas with equal sizes, marking the scanning areas as ;

[0024] Step S32: moving the sample table to by using a stepping motor displacement table, controlling a nano piezoelectric displacement table to move in , irradiating and scanning by the pulse laser, and recording an ending position of the nano piezoelectric displacement table;

[0025] Step S33: moving the sample table to Controlling the nanopiezoelectric displacement stage from Mid-range Starting from the nearest position, for Perform an irradiation scan;

[0026] Step S34: Repeat the above steps until irradiation scanning of all scan areas is completed.

[0027] Preferably, in step S3, before the sample stage on which the chip is placed is moved within a set scanning range and with a set scanning accuracy using the displacement stage, the chip surface is divided into sections, and an initial scanning resolution is set for each section. During the scanning process, the scanning resolution is dynamically adjusted according to the distance between the current scanning position and the initial sensitive position.

[0028] Preferably, the passive or metallic areas on the chip surface are divided into non-sensitive areas, the active device areas on the chip surface are divided into sensitive areas, and the areas where the electric field is concentrated at the edges of the non-sensitive or sensitive areas are divided into particularly sensitive areas.

[0029] Preferably, the expression for dynamically adjusting the scanning resolution based on the distance between the current scanning position and the initial sensitive position is:

[0030] ;

[0031] ;

[0032] In the above formula, For the first j The resolution of the step scan; For coefficients; This is the sum of the distances between the current scanning position and all initial sensitive positions; For the first i One initial sensitive location; For the first j The position of the step scan; This represents the total number of initial sensitive locations.

[0033] The beneficial effects of the present invention include at least the following:

[0034] 1. Through the stacked design of stepper motor displacement stage and nanopiezoelectric displacement stage, the system can cover the entire chip at once and automatically cut into the nanoscale scanning in the sensitive area, which solves the problem of traditional heavy ion beam spot fixation, which can only cover the whole area but cannot perform local fine scanning.

[0035] 2. After pulsed laser irradiation, the system immediately switches to a high-sensitivity low-light imaging mode through the same optical path. It uses defect emission to directly mark and locate the new damage introduced by irradiation, without having to move the chip to an offline device, thus avoiding position mismatch and time delay.

[0036] 3. All optical path switching, displacement table walking, bias mode, imaging mode are automatically completed by software, and the resolution can be dynamically adjusted according to the pre-identified defect coordinates during the scanning process, which significantly saves the test time. BRIEF DESCRIPTION OF DRAWINGS

[0037] Figure 1 It is a system structure schematic diagram of the embodiment of the present application.

[0038] Figure 2 It is an optical path structure schematic diagram of the pulse laser coupling output module in the embodiment of the present application.

[0039] Figure 3 It is a working principle schematic diagram of the planar displacement scanning system of the embodiment of the present application.

[0040] Figure 4 It is a switching principle schematic diagram of the high-definition display imaging module of the embodiment of the present application.

[0041] Figure 5 It is a method flowchart of the embodiment of the present application. DETAILED DESCRIPTION

[0042] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the protection scope of the present application.

[0043] As shown in the figure, the embodiment of the present application provides a chip irradiation damage identification system based on pulse laser cooperative scanning, which comprises a pulse laser output module, a high-definition display imaging module and a cooperative control module. Figure 1

[0044] The pulse laser output module is used for coupling the laser light paths output by the multiple pulse laser light sources into a single laser light path.

[0045] The working mode of the system of the embodiment of the present application comprises a visible light mode, a pulse laser irradiation mode and a damage identification mode, and the cooperative control module switches the working mode of the system through a movable beam splitter.

[0046] ​When switching to the pulsed laser irradiation mode, the pulsed laser output module is turned on by the cooperative control module, and other light sources are turned off; the electrical biasing module is switched to the pulsed laser irradiation mode, the planar displacement scanning module is controlled to move the sample table on which the chip is placed, so that the chip moves in the set scanning range with the set scanning accuracy; the photocurrent signals collected by the electrical biasing module are read in real time, and a photocurrent distribution heat map is generated to directly display the laser response intensity of each position of the chip.

[0047] As shown in Figure 2 , the pulsed laser coupling output module can couple multiple wavelengths of pulsed lasers, the pulsed lasers can be coupled to the optical path support through optical fibers, the output laser is reflected to the laser energy attenuation module through a mirror, the laser energy attenuation module attenuates and adjusts several incident light paths, and the light focusing output module focuses the attenuated and adjusted several incident light paths into a pulsed laser beam.

[0048] Each laser source in the embodiment of the application is equipped with an optical path support, the pulsed laser coupling output module can couple four pulsed lasers of different wavelengths through the optical path support, and the wavelengths of the four pulsed lasers are 266 nm, 355 nm, 532 nm and 1064 nm. For different chip types, the corresponding laser source needs to be turned on during use, the light shielding plate of the corresponding light source coupling light path is opened, and other light sources are turned off, so that the corresponding laser light can be output. The laser energy attenuation module includes a rotary multi-grade attenuation sheet and a continuous linear attenuation sheet. The adjustable grade of the rotary multi-grade attenuation sheet is n grades, and n=4 in the embodiment of the application, which are the maximum energy grade, 1 / 2 of the maximum energy, 1 / 4 of the maximum energy and 1 / 10 of the maximum energy. The continuous linear attenuation sheet can provide a laser energy attenuation capability of 0-10 -4 . The attenuated laser is incident to the light focusing output module, thereby outputting a high-quality and uniform pulsed laser beam. The light focusing output module in the embodiment of the application includes a laser beam expansion light path, a reflective objective lens and a height adjustment module. The laser beam coupled out of the optical fiber passes through the energy attenuation and laser beam expansion light path, the cross section is expanded, and the laser beam is focused into a pulsed laser beam output with small spot diameter, good uniformity and high beam quality in the reflective objective lens, and the focused light beam can meet the requirements of high-precision scanning irradiation on the light beam positioning capability.

[0049] When the system is switched to the pulsed laser irradiation mode, the laser energy attenuation module is adjusted to the initial test grade, i.e. the maximum attenuation grade, to ensure that the laser energy is safe and controllable; the height of the reflective objective lens and the incident angle of the laser are adjusted, so that the laser forms a pulsed laser beam with small diameter, good uniformity and high beam quality after passing through the beam expansion light path, and is focused to the surface of the chip.

[0050] The electrical biasing module can apply multiple electrical biases to the test chip sample, and the module includes a series of electrical source tables, oscilloscopes and a plurality of probes, BNC / SMA interfaces and BNC / SMA lead-out lines. The module can simultaneously set two biasing modes, including a pulsed laser irradiation mode and a damage identification mode, and control the source tables to output corresponding biases through a cooperative control module. The test chip sample in the embodiment of the present application is a 650V gallium nitride transistor device, and the three electrodes of the test transistor device are connected to the interfaces through lead bonding packaging and lead-out lines. The biasing modes of the pulsed laser irradiation mode are set by the cooperative control module to short the gate and the source and apply 100V to the drain, and the biasing modes of the damage identification mode are set to short the gate and the source and apply 300V to the drain. At the same time, the electrical biasing module can collect response data of the test device under biasing through the source tables, specifically, the high-performance oscilloscope is used to collect dynamic waveform data of the chip, the high-performance source table is used to output the bias voltage while monitoring the current, and the current data is automatically calculated to draw a photocurrent heat map or output a static response image.

[0051] As shown in Figure 3 , the planar displacement scanning module includes a sample stage, a stepping motor displacement stage, a nano piezoelectric displacement stage and a horizontal plane calibration module, and these platforms are fixed together in a stacked manner. The entire system is sequentially arranged from top to bottom as the sample stage, the horizontal plane calibration module, the nano piezoelectric displacement stage and the stepping motor displacement stage.

[0052] The stepping motor displacement stage and the nano piezoelectric displacement stage are controlled by a cooperative control module. The displacement accuracy of the nano piezoelectric displacement stage is about several nanometers, and the displacement range is a rectangle. The displacement accuracy of the stepping motor displacement stage is about , and the displacement range is a rectangle. The displacement accuracy of the nano piezoelectric displacement stage is high, and the displacement range is small. The displacement accuracy of the stepping motor displacement stage is low, and the displacement range is large. Therefore, when a large range needs to be moved, the system automatically accesses the stepping motor displacement stage, when high-precision scanning is needed, the system automatically accesses the nano piezoelectric displacement stage, and when both range and accuracy need to be considered, the system can automatically control the two displacement stages to work cooperatively.

[0053] Suppose the displacement accuracy of the nano piezoelectric displacement stage is a, and the displacement range is a rectangle. The displacement accuracy of the stepping motor displacement stage is b, and the displacement range is a rectangle. The displacement accuracy of the entire planar displacement scanning module is , and the displacement range is a rectangle. For example, when a range of on the surface of a chip needs to be scanned with an accuracy of , the system can divide the scanning range into 100 The scanned areas are marked as At the start of the scan, the stepper motor displacement stage is first moved to... And control the nanopiezoelectric displacement stage from its initial position. Start at Internal movement, causing the laser to... Perform an irradiation scan and record its ending position. When completed After the irradiation scan, the stepper motor displacement stage is moved to the next area. And control the nanopiezoelectric displacement stage from Mid-range Nearest location Start to Irradiation scanning is performed, and this process is repeated until all areas have been scanned. Using this method, the displacement accuracy of the entire planar displacement scanning module is several nanometers, and the displacement range is approximately... The rectangle; in addition, before large-area scanning, the horizontal plane calibration module can be operated by manually adjusting the calibration knob or by software automatic control to calibrate the horizontal plane height difference of the displacement stage, so as to avoid laser defocusing caused by height changes during large-area automatic scanning.

[0054] like Figure 4 As shown, when switching to the damage recognition mode, the pulsed laser output module is turned off via the collaborative control module, and the visible light illumination display unit and its corresponding visible light CCD camera and light shield are also turned off. The high-definition display imaging module is switched to the low-light display mode, the high-sensitivity charge-coupled device (CCD) camera is turned on, the movable beam splitter is adjusted to the defect recognition mode setting, and the light shield placed in front of the high-sensitivity CCD camera lens is opened. The electromagnetic shielding cover is opened to completely darken the test environment to avoid ambient light interference. The electrical bias module is switched to the damage recognition mode, and a preset bias voltage is applied to the test device, causing the chip's defects to emit weak light under the influence of the electric field. The collaborative control module will automatically adjust the exposure coefficient of the high-sensitivity CCD camera according to the ambient light level and the chip's defect emission intensity until the photoluminescence of the chip under the electrical bias voltage can be clearly observed, and the precise location coordinates of the defects and damages are recorded to complete the chip defect localization.

[0055] High-sensitivity CCD cameras have extremely high sensitivity and low-light imaging capabilities in the near-infrared and near-ultraviolet ranges, thus enabling them to identify the sensitive luminescence of chips under electrical bias.

[0056] like Figure 4As shown, when switching to the visible light mode, the high-definition display imaging module is switched to the visible light illumination display mode by the cooperative control module: all laser light sources of the pulsed laser output module are turned off to ensure no laser output, the movable beam splitter is switched to the visible light mode gear, the visible light LED is turned on, the height of the light focusing output module is adjusted so that the visible light LED is focused on the surface of the chip to be tested until the chip image is clear, the visible light CCD camera is turned on, the light shield arranged in front of the camera lens is opened, at this time the chip surface is displayed on the screen in real time, and the height adjustment module is manually or automatically adjusted by software to realize fine focusing and observation of the chip surface.

[0057] As shown in the Figure 5 The embodiment of the present application also provides a chip irradiation damage identification method based on pulsed laser cooperative scanning, which is realized based on the above-mentioned chip irradiation damage identification system based on pulsed laser cooperative scanning and comprises the following steps.

[0058] Step S1: the system is switched to the visible light mode, the chip to be tested is fixed on the sample table, the horizontal plane calibration module is used to adjust the plane of the sample table to be horizontal, and the height of the light source focusing output module is adjusted until the light of the visible light LED is focused on the sample surface.

[0059] Step S2: the system is switched to the damage identification mode by the cooperative control module, a bias voltage of the damage identification mode is applied to the chip, the light-induced sensitive luminescence of the chip is identified, and the initial sensitive position of the chip is recorded.

[0060] Step S3: the system is switched to the pulsed laser irradiation mode, the wavelength of the pulsed laser light source output by the pulsed laser output module is selected, the laser energy attenuation unit is adjusted to the maximum attenuation gear, the size of the bias voltage applied to the chip is adjusted, the displacement table is started, and the sample table on which the chip is placed is moved in the set scanning range with the set scanning accuracy by the displacement table.

[0061] Step S4: during the scanning process, if the photocurrent value of a position of the chip suddenly changes, the scanning is stopped, the coordinates, laser energy, wavelength and current abnormal data of the current position are recorded, the energy and wavelength of the laser output by the pulsed laser output module are changed, steps S1 to S3 are repeated, and otherwise step S5 is entered.

[0062] Step S5: the pulsed laser output module is turned off, the system is switched to the damage identification mode again, the light-induced sensitive luminescence of the chip is identified, the sensitive and damage positions of the chip after irradiation scanning are recorded, and the sensitive and damage positions are compared with the initial sensitive position obtained in step S2.

[0063] Step S6: replace the chip, change the wavelength and energy of the pulsed laser, and carry out repeated tests to obtain the irradiation sensitive area of the chip under the irradiation of pulsed laser at different wavelengths and energies, and the distribution of laser-induced damage and sensitive area.

[0064] In addition to switching between different working modes, the cooperative control module also has the function of automatically optimizing scanning. In the pulsed laser irradiation mode, it can be selected whether to enter the automatic optimization mode according to the test needs. In the automatic optimization mode, the system is first switched to the visible light mode, the image of the chip surface observed under the CCD camera is recorded, and the RGB data of the image is imported into the chip area recognition dataset built in the system. The dataset widely covers the surface topography of various chips, and the neural network is trained through the dataset, so that the neural network can automatically identify each subarea of the chip surface, including the passive area, the metal electrode area, the device structure area, etc. According to the response of each area to pulsed laser, it is divided into P1, P2 and P3, wherein the passive area, the metal area, etc. are not sensitive to pulsed laser irradiation in the past irradiation test practice, so they are marked as non-sensitive area P1; for the active device structure area, such as the area where the main device structure such as interdigital electrode is located, it can be marked as irradiation sensitive area P2; and for the edge part of P1 or P2 area, because it often has stronger electric field distribution, it is particularly sensitive to pulsed laser irradiation, which can be marked as special sensitive area P3.

[0065] Further, the scanning resolution is dynamically adjusted according to the original sensitive distribution of the chip before irradiation scanning. The position of each light-emitting point of the chip before irradiation scanning is marked as , n , which is the total number of initial sensitive light-emitting points. The maximum scanning resolution allowed by the plane displacement scanning module is , and in the embodiment of the present application, it is set to 30000dpi. Before scanning starts, the initial scanning resolution of each area needs to be set . For P1, P2 and P3, the initial resolutions are set to , respectively. After starting scanning, the plane displacement scanning module moves once, and the current scanning position is recorded as , j , which represents the current scanning step, and the sum of the distances between the current scanning position and all initial sensitive light-emitting points is calculated :

[0066] ;

[0067] In the formula, is the initial sensitive position of the i th.

[0068] According to Dynamic adjustment of scanning resolution, first j The resolution of the step scan Should be met:

[0069] ;

[0070] In the formula, A The coefficient is a negative value.

[0071] Through the above process, the resolution in the scanning process can be dynamically adjusted according to the irradiation sensitive area distribution and the sensitive distribution on the chip surface.

[0072] The pulse laser irradiation full-chip scanning and damage identification system provided by the application is characterized in that: the system integrates the multi-wavelength and energy-adjustable pulse laser simulation heavy ion irradiation and the chip damage-sensitivity identification, first automatically implements large-range and high-precision scanning irradiation on the whole chip through the laser, and collects photoelectric current data in real time to monitor the device performance change; then switches to the sensitivity identification mode through one key, and compares the damage and sensitivity distribution of the chip before and after irradiation in situ. The system solves the two problems of the existing pulse laser simulation device, i.e., it is difficult to perform large-range automatic scanning irradiation, and it is unable to accurately position and quantify the irradiation damage / sensitivity. The whole process is scheduled by the integrated cooperative control module, each functional module can be automatically and steplessly switched, the test result is high-definition and visual, the stability, operability and automation degree of the system are significantly improved, and the test efficiency is greatly improved.

[0073] The technical features of the above embodiments can be combined in any manner. In order to make the description simple, all possible combinations of the technical features in the above embodiments are not described, only the preferred embodiments of the application are expressed, and the description is more specific and detailed, but it should not be understood as limiting the scope of the application. As long as the combination of these technical features does not exist contradictory, it should be considered as the scope of the present application.

[0074] It should be noted that, for those skilled in the art, without departing from the concept of the present application, a number of modifications and improvements can be made, which are within the scope of the present application. Therefore, the protection scope of the present application should be subject to the appended claims.

Claims

1. A chip irradiation damage identification method based on pulsed laser collaborative scanning, characterized in that, Includes the following steps: Step S1: Fix the chip to be tested on the sample stage, adjust the plane of the sample stage to be horizontal, and adjust the height of the light focusing output module until the light from the visible light source is focused on the sample surface. Step S2: Switch the system to damage recognition mode, turn on the electromagnetic shield and the high-sensitivity charge-coupled device CCD camera, apply a bias voltage to the chip, identify the photosensitive luminescence of the chip, and record the initial sensitive position of the chip. Step S3: Switch the system to pulsed laser irradiation mode, select the wavelength of the pulsed laser source output by the pulsed laser output module, adjust the laser energy attenuation unit to the maximum attenuation level, adjust the magnitude of the bias voltage applied to the chip, start the displacement stage, and use the displacement stage to move the sample stage on which the chip is placed within the set scanning range with the set scanning accuracy. Step S4: During the scanning process, if the photocurrent value at a certain position of the chip changes abruptly, stop the scanning, record the coordinates of the current position, laser energy, wavelength and abnormal current data; change the energy and wavelength of the laser output by the pulsed laser output module, and repeat steps S1 to S3; otherwise, proceed to step S5. Step S5: Turn off the pulsed laser output module, switch the system back to the damage recognition mode, identify the luminescence of the photosensitive position of the chip, record the sensitive and damaged positions of the chip after irradiation scanning, and compare them with the initial sensitive positions obtained in step S2.

2. The chip irradiation damage identification method based on pulsed laser collaborative scanning according to claim 1, characterized in that: Step S3, which involves using a displacement stage to move the sample stage containing the chip within a set scanning range and with a set scanning precision, includes the following steps: Step S31: Divide the set scanning range into several scanning regions of equal size, and label the scanning regions as S1, S2, ..., S... n ; Step S32: The displacement stage includes a nanopiezoelectric displacement stage and a stepper motor displacement stage. The nanopiezoelectric displacement stage is disposed above the stepper motor displacement stage, and the sample stage is disposed above the nanopiezoelectric displacement stage. The sample stage is moved to S1 using the stepper motor displacement stage, and the nanopiezoelectric displacement stage is controlled to move within S1 so that the pulsed laser can irradiate and scan S1, and the end position l1 of the nanopiezoelectric displacement stage is recorded. Step S33: Use a stepper motor displacement stage to move the sample stage to S2, and control the nano-piezoelectric displacement stage to start from the position in S2 closest to l1 to perform irradiation scanning on S2; Step S34: Repeat the above steps until irradiation scanning of all scanned areas is completed.

3. The chip irradiation damage identification method based on pulsed laser collaborative scanning according to claim 2, characterized in that: Before using the displacement stage to move the sample stage containing the chip within the set scanning range and with the set scanning accuracy in step S3, the chip surface is divided into sections, and an initial scanning resolution is set for each section. During the scanning process, the scanning resolution is dynamically adjusted based on the distance between the current scanning position and the initial sensitive position.

4. The chip irradiation damage identification method based on pulsed laser collaborative scanning according to claim 3, characterized in that: The passive or metallic areas on the chip surface are classified as non-sensitive areas, the active device areas on the chip surface are classified as sensitive areas, and the areas where the electric field is concentrated at the edges of the non-sensitive or sensitive areas are classified as particularly sensitive areas.

5. The chip irradiation damage identification method based on pulsed laser collaborative scanning according to claim 3, characterized in that: The expression for dynamically adjusting the scanning resolution based on the distance between the current scanning position and the initial sensitive position is: l j =λ j-1 +A·(L j -L j-1 ); In the above formula, λ j L is the resolution of the j-th scan step; A is a coefficient; L j The sum of distances between the current scan position and all initial sensitive positions; s i Let s be the i-th initial sensitive position; j Let be the position of the scan in step j; n is the total number of initial sensitive positions.

6. A chip irradiation damage identification system based on pulsed laser collaborative scanning, applicable to the chip irradiation damage identification method based on pulsed laser collaborative scanning as described in any one of claims 1-5, characterized in that, include: Pulsed laser output module and collaborative control module; The pulsed laser output module couples the laser optical paths output from multiple pulsed laser sources into a single laser optical path; The system includes a pulsed laser irradiation mode and a damage identification mode, and the collaborative control module is used to switch the system's operating mode: When switching to the pulsed laser irradiation mode, the collaborative control module activates the pulsed laser output module and controls the displacement stage to move the sample stage on which the chip is placed, so that the chip moves within the set scanning range with the set scanning accuracy. When switching to the damage recognition mode, the collaborative control module activates the electromagnetic shield and the high-sensitivity charge-coupled device (CCD) camera, applies a bias voltage to the chip, identifies the chip's luminescence, and records the chip's irradiation-sensitive points.

7. A chip irradiation damage identification system based on pulsed laser collaborative scanning according to claim 6, characterized in that: The pulsed laser output module includes a multi-channel pulsed laser source, a multi-path coupling module, a laser energy attenuation module, and a beam focusing output module. The multi-path coupling module couples the laser beams output from the multi-channel pulsed laser source into a single incident beam. The laser energy attenuation module adjusts the attenuation of the single incident beam. The beam focusing output module focuses the attenuated single incident beam into a pulsed laser beam.

8. A chip irradiation damage identification system based on pulsed laser collaborative scanning according to claim 6, characterized in that: The displacement stage includes a nanopiezoelectric displacement stage and a stepper motor displacement stage. The nanopiezoelectric displacement stage is disposed above the stepper motor displacement stage, and the sample stage is disposed above the nanopiezoelectric displacement stage. When the sample stage on which the chip is placed is moved by the displacement stage, the sample stage is first moved to the target area by the stepper motor displacement stage, and then the nanopiezoelectric displacement stage is used to scan the target area.

9. A chip irradiation damage identification system based on pulsed laser collaborative scanning according to claim 8, characterized in that: The displacement stage also includes a horizontal plane calibration module, which is used to adjust the plane of the sample stage to be horizontal.

10. A chip irradiation damage identification system based on pulsed laser collaborative scanning according to claim 6, characterized in that: The collaborative control module switches the system's operating mode via a movable beam splitter.

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