A method and system for monitoring optical module link defects

Abstract

The application discloses a kind of optical module link defect monitoring method and system;Through the way of polarization conversion or polarization separation, the reflected light signal in optical module link is acquired, and multi-stage multi-section reflected light monitoring technology concept is proposed;The present scheme is mainly aimed at two-stage two-section reflected light monitoring technology, and two-stage two-section circuit is composed of first circuit and second circuit, the dynamic range of the monitored photocurrent is divided into two sections by first circuit and second circuit, the first section is directly collected after first circuit through the first stage amplification processing, and the second section is collected after second circuit through the second stage amplification processing after the first stage amplification processing of first circuit;In this way, both the collection range of photocurrent signal can be guaranteed, and the collection accuracy when photocurrent signal is small can be guaranteed.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of optical communication technology, and particularly relates to an optical module link defect monitoring method and system. BACKGROUND

[0002] As a key component in fiber broadband operation services, the performance of an optical module is directly related to the efficiency and reliability of data transmission. Among the numerous technical indicators of optical modules, the reflected light intensity of the reflection link has gradually attracted attention. Reflected light intensity refers to the intensity of the light signal reflected back in the optical fiber or other media from the light signal emitted by the optical module. This parameter is crucial for ensuring the correctness of data transmission and the stability of the system.

[0003] When the reflected light intensity is too high, it will interfere with the laser transmitter unit of the optical module, causing signal distortion and an increase in the bit error rate. The increase in the bit error rate not only reduces the efficiency of data transmission, but also can cause communication interruption, seriously affecting the performance of the optical communication system. Therefore, real-time monitoring and early warning of the reflected light intensity of the reflection link has become one of the key technologies to improve the reliability of optical communication systems.

[0004] In the prior art, when detecting and collecting photocurrent signals, an optoelectronic detector is often directly connected to a resistor and then an analog-to-digital converter is used for direct collection. However, when detecting and collecting reflected light signals of optical modules, such as in the case of a 100Gbps or 200Gbps per channel silicon optical module, the optical transmission environment is complex and variable. Reflection on a larger optical path will seriously affect the transmission performance of the system, and smaller reflections will also have adverse effects such as flickering and MPI on the system. Therefore, it is necessary to monitor a signal with a wide dynamic range, i.e., a photocurrent in the range of 50nA to 50uA or a wider range. The precision and monitoring dynamic range of traditional methods are far from enough. Generally, the effective number of bits of an analog-to-digital converter is 10, and combined with the influence of power supply noise, amplifier noise, etc. in the circuit, even if the effective number of bits of the analog-to-digital converter is increased, it is still difficult to monitor a photocurrent in the range of 50nA to 50uA.

[0005] At the same time, the existing technology has obvious limitations in solving the problem of monitoring the reflected light intensity of the reflection link. Therefore, there is an urgent need to develop a new and effective method for monitoring and early warning of the reflected light intensity to overcome the shortcomings of the existing technology and meet the increasing performance demands of optical communication systems. SUMMARY

[0006] The technical problem to be solved by the present application is that the prior art method for detecting and collecting photocurrent signals cannot monitor signals with a wide dynamic range, such as silicon light module reflected light signals, and the precision and monitoring dynamic range are far from enough. Even if the effective number of bits of the analog-to-digital converter is increased, it is still difficult to monitor the photocurrent with a large monitoring dynamic range (50nA~50uA). The present application aims to provide a method and system for monitoring defects in an optical module link, which obtains reflected light signals in the optical module link through polarization conversion or polarization separation, and proposes a multi-stage multi-section monitoring technology. The present application mainly aims at a two-stage two-section reflected light monitoring technology. The two-stage two-section circuit is composed of a first circuit and a second circuit. The dynamic range of the photocurrent to be monitored is divided into two sections by the first circuit and the second circuit. The first section is directly collected after the first-stage amplification by the first circuit, and the second section is collected after the second-stage amplification by the second circuit after the first-stage amplification by the first circuit. In this way, the collection range of the electrical signal (photocurrent signal) of the silicon light module reflected light can be ensured, and the collection accuracy of the electrical signal (photocurrent signal) of the silicon light module reflected light when it is small can also be ensured.

[0007] The present application is realized by the following technical solutions:

[0008] The present application provides a method for monitoring defects in an optical module link, which includes:

[0009] Obtain the reflected light signal in the optical module link, and convert the reflected light signal into an electrical signal;

[0010] The method for obtaining the reflected light signal includes: the emission end of the optical module sends a main light signal to the optical module link; obtaining a returned light signal returned in the optical module link, and separating the reflected light signal from the returned light signal based on a polarization control beam splitter or a polarization beam splitter;

[0011] The electrical signal is subjected to a first-stage amplification process to obtain a first electrical signal, a second-stage amplification process is performed on the first electrical signal to obtain a second electrical signal, and so on, and an (n+1)th-stage amplification process is performed on an nth electrical signal to obtain an (n+1)th electrical signal; n≥1;

[0012] The limit parameter is determined based on the amplification process of each stage, and the ith electrical signal is determined as the target electrical signal according to the limit parameter; i=1, 2, …, n+1;

[0013] The target electrical signal is monitored, and an alarm is prompted when the target electrical signal exceeds an alarm threshold.

[0014] Further optimization scheme is that when the reflected light signal is separated from the returned light signal based on the polarization control beam splitter, the method for obtaining the reflected light signal in the optical module link further includes:

[0015] The transmitting end of the optical module emits a first optical signal, and a polarization control beam splitter performs first polarization conversion on the first optical signal to obtain a second optical signal emitted to the optical module link;

[0016] The polarization control beam splitter performs second polarization conversion on a third optical signal returned in the optical module link to obtain a fourth optical signal and a fifth optical signal; the fourth optical signal is returned to the transmitting end of the optical module; the third optical signal is a random polarization state; the random polarization state means that the optical signal is fixed to one or more polarization states at a certain time;

[0017] The fifth optical signal is used as a reflected optical signal.

[0018] When the reflected optical signal is separated from the returned optical signal based on the polarization beam splitter, the reflected optical signal in the optical module link is obtained, including a method:

[0019] The transmitting end of the optical module emits a sixth optical signal to the optical module link, the sixth optical signal is a first polarization mode; a seventh optical signal returned in the optical module link is obtained, and polarization separation is performed on the seventh optical signal to obtain an eighth optical signal and a ninth optical signal; the eighth optical signal is a first polarization mode; the ninth optical signal is used as a reflected optical signal.

[0020] A further optimization scheme is that when n = 1, the first-stage amplification processing is based on a first circuit, and the second-stage amplification processing is based on a second circuit;

[0021] The first circuit comprises a first amplifier, a resistor R, and a first analog-to-digital converter; one end of the resistor R is connected to the negative input end of the first amplifier, and the other end is connected to the output end of the first amplifier; the positive input end of the first amplifier is grounded; and the output end of the first amplifier is connected to the first analog-to-digital converter;

[0022] The second circuit comprises a second amplifier, a resistor R3, a resistor R4, and a second analog-to-digital converter; one end of the resistor R3 is grounded, and the other end is connected to the negative input end of the second amplifier; one end of the resistor R4 is connected to the output end of the second amplifier, and the other end is connected to the negative input end of the second amplifier; and the output end of the second amplifier is connected to the second analog-to-digital converter;

[0023] The output end of the first amplifier is connected to the positive input end of the second amplifier.

[0024] A further optimization scheme further comprises a current mirror circuit, a transimpedance amplification circuit, or a differential amplification circuit; the current mirror circuit, the transimpedance amplification circuit, or the differential amplification circuit are all connected to the input end of the first circuit.

[0025] Further optimization scheme is that the first circuit and the second circuit each comprise a filter circuit, the filter circuit is arranged between the first amplifier and the first analog-digital converter, and the filter circuit is arranged between the second amplifier and the second analog-digital converter.

[0026] Further optimization scheme is that when n = 1, the determination method of the limit parameter comprises:

[0027] The first circuit parameter and the first circuit gain parameter are determined according to the maximum reflected light power of the reflected light signal and the photoelectric conversion efficiency; the first circuit gain parameter is a circuit gain parameter between the electric signal sending node and the first node; the first node is an output end of the first amplifier;

[0028] The maximum saturation reflected light intensity of the second circuit is determined according to the output precision of the first circuit; the preset minimum voltage threshold and minimum resolution threshold, the output voltage of the first circuit is greater than or equal to the minimum voltage threshold, and the output voltage resolution of the second circuit is greater than or equal to the minimum resolution threshold;

[0029] The second circuit gain parameter is determined under the maximum saturation reflected light intensity of the second circuit; the second circuit gain parameter is a circuit gain between the first node and the second node; the second node is an output end of the second amplifier;

[0030] The first circuit output voltage value under the maximum saturation reflected light of the second circuit is obtained;

[0031] The limit parameter is obtained by subtracting the reserved redundant voltage from the first circuit output voltage value.

[0032] Further optimization scheme is that the determination method of the target electric signal comprises:

[0033] When the first electric signal is greater than or equal to the limit parameter, the first electric signal is taken as the target electric signal;

[0034] Otherwise, the second electric signal is taken as the target electric signal.

[0035] Further optimization scheme is that the target electric signal is monitored, and an alarm prompt is given when the target electric signal exceeds an alarm threshold; the method comprises:

[0036] The preset alarm threshold A and alarm threshold B, wherein A > B;

[0037] When Qi > A, a serious alarm signal is sent;

[0038] When A > Qi > B, a general alarm signal is sent;

[0039] When B > Qi, no alarm signal is generated;

[0040] Qi is a target electrical signal.

[0041] Further optimization scheme is that the optical module supports the common management interface specification CMIS, and the monitoring of the reflected light signal is realized through the observable quantity VDM in the specification.

[0042] The present scheme also provides an optical module link defect monitoring system, characterized by realizing the optical module link monitoring method described above, and the system comprises:

[0043] A detection module is configured to acquire a reflected light signal in an optical module link and convert the reflected light signal into an electrical signal.

[0044] A first amplification module is configured to perform a first-stage amplification process on the electrical signal to obtain a first electrical signal.

[0045] A second amplification module is configured to perform a second-stage amplification process on the first electrical signal to obtain a second electrical signal.

[0046] …;

[0047] An nth amplification module is configured to perform an (n+1) -stage amplification process on an nth electrical signal to obtain an (n+1) th electrical signal; n≥1.

[0048] A parameter determination module is configured to determine a limit parameter based on the amplification processes at all stages, and determine an ith electrical signal as a target electrical signal according to the limit parameter; i=1, 2, …, n+1.

[0049] An alarm module is configured to monitor the target electrical signal and alarm when the target electrical signal exceeds an alarm threshold.

[0050] Compared with the prior art, the present application has the following advantages and beneficial effects:

[0051] 1. The present application provides an optical module link defect monitoring method and system; the reflected light signal in the optical module link is acquired through polarization conversion or polarization separation, and a multi-stage multi-section reflected light monitoring technology is proposed; the present scheme mainly aims at a two-stage two-section reflected light monitoring technology, and the two-stage two-section circuit is composed of a first circuit and a second circuit; the dynamic range of the optical current to be monitored is divided into two sections by the first circuit and the second circuit; the first section is directly collected after the first-stage amplification process of the first circuit, and the second section is collected after the second-stage amplification process of the second circuit after the first-stage amplification process of the first circuit; in this way, the collection range of the electrical signal (optical current signal) can be ensured, and the collection accuracy of the electrical signal (optical current signal) when it is small can also be ensured.

[0052] 2. The application provides a kind of optical module link defect monitoring method and system;By polarization control beam splitter reflected light signal conversion acquisition, or by polarization beam splitter to realize the separation acquisition of reflected light signal, in the case where not losing emission light, reflected light signal is obtained, while reflected light signal will not lose intensity because of purely power separation, it is favorable for the detection of reflection link;At the same time, in order to facilitate the integration of link monitoring structure and optical module, the specific polarization control beam splitter architecture capable of integration with optical module is proposed in the present application, the monitoring of reflected light signal intensity is realized, and the loss of main light path and received reflected light in link is avoided. BRIEF DESCRIPTION OF DRAWINGS

[0053] In order to more clearly illustrate the technical scheme of the exemplary embodiments of the application, the drawings needed in the embodiments will be briefly introduced as follows, and it should be understood that the following drawings only show some embodiments of the application, and therefore should not be regarded as a limitation on the scope, and for those skilled in the art, other related drawings can also be obtained without creative labor. In the drawings:

[0054] Figure 1 It is a flow chart of optical module link monitoring method;

[0055] Figure 2 It is a schematic diagram of the principle of A embodiment for obtaining reflected light signal;

[0056] Figure 3 It is a schematic diagram of the principle of B embodiment for obtaining reflected light signal;

[0057] Figure 4 It is a schematic diagram of the principle of B1 embodiment of B embodiment of reflected light signal;

[0058] Figure 5 It is a schematic diagram of the principle of B2 embodiment of B embodiment of reflected light signal;

[0059] Figure 6 It is a schematic diagram of the acquisition circuit of first electric signal and second electric signal;

[0060] Figure 7 It is a schematic diagram of the acquisition circuit connected with current mirror circuit;

[0061] Figure 8 It is a schematic diagram of the acquisition circuit connected with transimpedance amplifier circuit;

[0062] Figure 9 It is a schematic diagram of the acquisition circuit connected with differential amplifier circuit;

[0063] Figure 10 It is a schematic diagram of the voltage output result of two-stage amplifier circuit in acquisition circuit simulation;

[0064] Figure 11 Fig. 2 is a schematic diagram of a two-stage amplification circuit voltage difference result for collecting a circuit;

[0065] Figure 12 Fig. 3 is a schematic diagram of a scanning module structure;

[0066] Figure 13 Fig. 4 is a schematic diagram of a practical application of embodiment 3;

[0067] Figure 14 Fig. 5 is a schematic diagram of another practical application of embodiment 3. DETAILED DESCRIPTION

[0068] In order to make the objectives, technical solutions and advantages of the present application clearer, further detailed description will be given below in combination with embodiments and drawings, and the schematic embodiments of the present application and the description thereof are only used to explain the present application, and do not limit the present application.

[0069] The prior art method for detecting and collecting photoelectric current signals is far from enough in precision and monitoring dynamic range when detecting and collecting signals such as silicon light module reflected light signals which need to be monitored in a wide dynamic range. Even if the effective number of bits of an analog-to-digital converter is increased, it is still difficult to monitor photoelectric current with a large monitoring dynamic range (50 nA~50 uA). In view of this, the present application provides the following embodiments to solve the above technical problems.

[0070] Embodiment 1: The present embodiment provides a method for monitoring defects of an optical module link, as shown in Figure 1 Fig. 1, which comprises:

[0071] Step 1: Obtain a reflected light signal in the optical module link, and convert the reflected light signal into an electrical signal;

[0072] The specific method for obtaining the reflected light signal comprises: a transmitting end of an optical module sends a main light signal to the optical module link; obtaining a returned light signal returned in the optical module link, and separating a reflected light signal from the returned light signal based on a polarization control beam splitter or a polarization beam splitter;

[0073] As an A implementation scheme of step 1, when the reflected light signal is separated from the returned light signal based on the polarization beam splitter, the method for obtaining the reflected light signal comprises:

[0074] The transmitting end of the optical module sends a sixth light signal (6) to the optical module link, and the sixth light signal (6) is in a first polarization mode; a seventh light signal (7) returned in the optical module link is obtained, and a polarization separation is performed on the seventh light signal to obtain an eighth light signal (8) and a ninth light signal (9); the eighth light signal (8) is in the first polarization mode; and the ninth light signal (9) is taken as the reflected light signal. The ninth light signal (9) is in any one polarization mode except the first polarization mode;

[0075] The polarization beam splitter in Implementation A can separate two polarization states; the sixth optical signal (6) of the TE transverse electric mode emitted by the transmitter of the optical module enters the optical module link. As the optical module link is adjusted and the environment changes, the optical signal is no longer a pure TE transverse electric mode. If orthogonal polarization decomposition is performed, a part of the TM transverse magnetic mode will usually remain; therefore, based on the difference in polarization characteristics that the reflected optical signal (seventh optical signal (7)) returned by the optical module link is not a pure TE transverse electric mode, this scheme designs a polarization beam splitter. Figure 2 The reflected light signal separation architecture is shown in the figure. When the seventh optical signal (7) returned from the optical module link returns to the optical module, it is input to the polarization beam splitter. The polarization beam splitter separates the reflected light signal (ninth optical signal (9)) of the TM transverse magnetic mode part and the reflected light signal (eighth optical signal (8)) of the TE transverse electric mode part. At this time, the reflected light signal (ninth optical signal (9)) of the TM transverse magnetic mode part can be collected. According to the optical module system structure and other parameters and experience, the ratio of the reflected light signal of the TE transverse magnetic mode part to the reflected light signal of the TM transverse magnetic mode part can be determined. Then, the intensity of the complete reflected light signal can be monitored according to the reflected light signal of the TM transverse magnetic mode part.

[0076] like Figure 3 As shown, in implementation scheme B of step one, when the reflected light signal is separated from the returned light signal based on the polarization control beam splitter, the method for obtaining the reflected light signal further includes:

[0077] The transmitting end of the optical module emits a first optical signal (1), and the polarization control beam splitter performs a first polarization conversion on the first optical signal (1) to obtain a second optical signal (2), which is then sent to the optical module link.

[0078] The polarization control beam splitter performs a second polarization conversion on the third optical signal (3) returned from the optical module link to obtain the fourth optical signal (4) and the fifth optical signal (5); the fourth optical signal (4) is returned to the transmitter of the optical module; the third optical signal (3) is in a random polarization state; the random polarization state means that the optical signal is fixed in one or more polarization states at a certain moment;

[0079] The fifth optical signal (5) is used as the reflected optical signal.

[0080] In this scheme, the first optical signal (1) can be polarized by a polarization control beamsplitter, which can output a second optical signal (2) in a certain polarization state. Similarly, in reverse, the third optical signal (3) in a random polarization state reflected back to the optical module can also be converted into a TM transverse magnetic mode polarized light orthogonal to the TE transverse electric mode light by the polarization control beamsplitter and output from another port to obtain a fifth optical signal (5) (reflected optical signal). The fifth optical signal (5) enters the photodetector and is converted into an electrical signal. See the following two implementation methods for details:

[0081] As an implementation method of scheme B, B1 is:

[0082] like Figure 4 As shown, in this embodiment, the polarization control beam splitter is provided with two phase shifter groups (first phase shifter group and second phase shifter group) and two beam splitters (first beam splitter and second beam splitter); each phase shifter group has two phase shifters, and each phase shifter group is connected to a beam splitter at its front end. The last phase shifter group is connected to the first port and the second port of the polarization state separation and merging unit. The first port and the second port of the polarization state separation and merging unit are respectively connected to one phase shifter in the phase shifter group; the first beam splitter at the front end is connected to the TX end and the PD end. The first optical signal (1) enters the first beam splitter from the TX end, the fifth optical signal (5) is output from the first beam splitter to the PD end, and the fourth optical signal (4) is output from the first beam splitter to the TX end. The beam splitting ratio of the first beam splitter and the second beam splitter is 50:50; the polarization state separation and merging unit is a polarization separation rotator.

[0083] When the first optical signal (1) of the TE transverse electric mode is input to the polarization control beam splitter from the transmitter of the optical module, the first beam splitter splits the first optical signal (1) into optical signal A1 and optical signal B1. The optical signal A1 and optical signal B1 enter the first phase shifter group, and the first phase shifter group adjusts the phase of the two optical signals. When the two optical signals are combined in the second beam splitter, they can achieve arbitrary splitting ratio output. The optical signals with different splitting ratios are then passed through the second phase shifter group, and the phase relationship between them can be adjusted. Thus, in the subsequent polarization beam combining process of the polarization separation rotator, the adjustment between linear polarization and circular polarization can be realized.

[0084] When the third optical signal (3) returns from the link to the optical module, the third optical signal (3) of arbitrary polarization state will be decomposed into two orthogonal A-polarized optical signals and B-polarized optical signals by the polarization splitter. At the same time, the polarization state of the B-polarized optical signal is converted into the first mode, which is the polarization state of the A-polarized optical signal. (In this embodiment, the TM transverse magnetic mode light is converted into the TE transverse electric mode light). That is, the polarization states of the A-polarized optical signal and the B-polarized optical signal entering the second phase shifter group are the same and have coherent characteristics. The phase relationship between the A-polarized optical signal and the B-polarized optical signal is adjusted by the second phase shifter group, so that the beam ratio can be adjusted to 50:50 when entering the second beam splitter. When entering the first phase shifter group, the phase relationship between the two optical signals can be further adjusted to achieve the beam combining and output from the detection port in the first beam splitter. By adjusting the polarization control beam splitter, the intensity of the fourth optical signal (4) is 0 and the intensity of the fifth optical signal (5) is the maximum. The fifth optical signal (5) is converted into an electrical signal by the photodetector.

[0085] As an implementation method of scheme B, B2 is as follows: Figure 5 As shown, in order to further optimize the structure of the polarization-controlled beam splitter, the polarization-controlled beam splitter has only one phase shifter group and one beam splitter. The phase shifter group includes two phase shifters and is located between the beam splitter and the polarization state separator and combiner. As a preferred embodiment, the beam splitting ratio of the beam splitter in this scheme is 50:50. This structure reduces one beam splitter and one phase shifter group, which is beneficial to increasing the integration and reducing power consumption.

[0086] When the first optical signal (1) of the TE transverse electric mode is input to the polarization control beam splitter through the TX terminal, the beam splitter splits the first optical signal into two beams, which enter the phase shifter group for phase adjustment. Then, the beams are combined by the polarization separation rotator and the adjustment between linear polarization and circular polarization is realized to obtain the second optical signal (2) of a certain polarization state. Conversely, when the third optical signal (3) returns from the link to the optical module, the third optical signal (3) of any polarization state will be decomposed into two orthogonal polarization states by the polarization separation rotator. At the same time, the TM transverse magnetic mode light is converted into the TE transverse electric mode light. The polarization state light signal enters the phase shifter group to adjust the phase relationship between the two light signals. Finally, the light signal is divided by the intensity of the beam splitter to obtain the fourth optical signal (4) and the fifth optical signal (5). At this time, the reflected light signal of the fifth optical signal (5) is directly collected and enters the photodetector to be converted into an electrical signal.

[0087] Step 2: Perform a first-stage amplification on the electrical signal to obtain a first electrical signal, perform a second-stage amplification on the first electrical signal to obtain a second electrical signal, ..., perform an (n+1)th-stage amplification on the nth electrical signal to obtain the (n+1)th electrical signal; n≥1;

[0088] The prior art directly uses a photodetector to connect a resistor and then collects the signal through an analog-to-digital converter when detecting and collecting a photocurrent signal. However, when detecting and collecting a reflected light signal of an optical module, such as in a 100 Gbps or 200 Gbps application of a silicon optical module, the optical transmission environment is variable and complex, and a large reflection in the optical path will seriously affect the transmission performance of the system, and a small reflection will also have an adverse effect on the system, such as flickering and MPI. Therefore, a signal with a wide dynamic range needs to be monitored, and a photocurrent in the range of 50 nA to 50 uA or a wider range needs to be monitored. The precision and monitoring dynamic range of the traditional method are far from enough. The effective number of bits of a general analog-to-digital converter is 10, and combined with the influence of power supply noise, amplifier noise and the like in the circuit, even if the effective number of bits of the analog-to-digital converter is increased, it is also difficult to monitor the photocurrent in the range of 50 nA to 50 uA. In view of this, the present embodiment is specially set for the application of a silicon optical module to realize the detection and collection of a reflected light signal by the following method. Specifically:

[0089] As shown in Figure 6 , the present scheme mainly designs two-stage amplification processing, i.e., n = 1.

[0090] The first-stage amplification processing is realized based on a first circuit, and the second-stage amplification processing is realized based on a second circuit.

[0091] The first circuit comprises a first amplifier, a resistor R and a first analog-to-digital converter; one end of the resistor R is connected to the negative input end of the first amplifier, and the other end is connected to the output end of the first amplifier; the positive input end of the first amplifier is grounded; and the output end of the first amplifier is connected to the first analog-to-digital converter ADC1.

[0092] The second circuit comprises a second amplifier, a resistor R3, a resistor R4 and a second analog-to-digital converter; one end of the resistor R3 is grounded, and the other end is connected to the negative input end of the second amplifier; one end of the resistor R4 is connected to the output end of the second amplifier, and the other end is connected to the negative input end of the second amplifier; and the output end of the second amplifier is connected to the second analog-to-digital converter ADC2.

[0093] The output end of the first amplifier is connected to the positive input end of the second amplifier.

[0094] The first circuit and the second circuit each comprise a filter circuit, the filter circuit is arranged between the first amplifier and the first analog-digital converter, and the filter circuit is arranged between the second amplifier and the second analog-digital converter ADC2. The filter circuit arranged between the first amplifier and the first analog-digital converter ADC1 comprises a resistor R2 and a capacitor C1, the resistor R2 is connected between the first amplifier and the first analog-digital converter ADC1, and the capacitor C1 has one end grounded and the other end connected between the resistor R2 and the first analog-digital converter ADC1; the filter circuit arranged between the second amplifier and the second analog-digital converter ADC2 comprises a resistor R5 and a capacitor C2, the resistor R5 is connected between the second amplifier and the second analog-digital converter ADC2, and the capacitor C2 has one end grounded and the other end connected between the resistor R5 and the first analog-digital converter ADC2.

[0095] The scheme provides a two-stage two-section reflected light monitoring technology, a two-stage two-section circuit is formed by a first circuit and a second circuit, a dynamic range of a to-be-monitored photocurrent is divided into two sections through the first circuit and the second circuit, a first section is subjected to I / V conversion, amplification conditioning and filtering by the first circuit through a first amplifier, and then is collected by a first analog-digital converter ADC1, and a second section is subjected to I / V conversion and amplification conditioning by the first circuit through the first amplifier, and then is subjected to amplification conditioning and filtering by the second circuit, and then is collected by a second analog-digital converter ADC2; in this way, the collection range of an electrical signal (a photocurrent signal) is ensured, and the collection accuracy of the electrical signal (the photocurrent signal) when the electrical signal (the photocurrent signal) is small is ensured.

[0096] The scheme further comprises a current mirror circuit, a transimpedance amplification circuit or a differential amplification circuit, and the current mirror circuit, the transimpedance amplification circuit or the differential amplification circuit is connected to an input end of the first circuit.

[0097] In high-speed silicon light technology, a photodetector is generally cathode-grounded and anode-output photocurrent; the scheme provides an embodiment in which a current mirror circuit is added to the first circuit, the two-stage two-section circuit adjusts the current direction through the current mirror circuit, and then performs I / V conversion and amplification conditioning, and is collected in two stages and two sections. As shown in Figure 7 The current mirror circuit comprises two transistors, one end of the current mirror circuit is connected to the photodetector, and the other end is connected to a negative input end of the first amplifier;

[0098] The scheme provides an embodiment in which a transimpedance amplification circuit is added to the first circuit, the transimpedance amplification circuit converts the photocurrent into a voltage, and then the voltage is processed by the first amplifier; as shown in Figure 8As shown, the trans-impedance amplification circuit includes resistors R1, R6, R7, R8 and a third amplifier; one end of the resistor R1 is connected to the output end of the first amplifier, and the other end is connected to the negative input end of the first amplifier; one end of the resistor R7 is grounded, and the other end is connected to the positive input end of the first amplifier; one end of the resistor R6 is connected to the negative input end of the first amplifier, and the other end is connected to the output end of the third amplifier; one end of the resistor R8 is connected to the positive input end of the first amplifier, and the other end is grounded.

[0099] Considering that the current mirror is mainly composed of transistors, the accuracy is limited, which is more prominent in the case of small current of reflected signals in a silicon optical module, and the use of a high-precision current mirror has a high cost, therefore, the preferred scheme is proposed for monitoring the photocurrent in the dynamic range of 50nA-50uA of the silicon optical module: adding a differential amplification circuit in the first circuit, as shown in Figure 9 As shown, the differential amplification circuit includes resistors R9, R10, R11, R12, R13, R14, R15, R16, a fourth amplifier and a fifth amplifier.

[0100] One end of the resistor R is connected to the photodetector, and the other end is connected to the resistor R9; one end of the resistor R10 is connected to the negative input end of the fourth amplifier, and the other end is connected to the negative input end of the fifth amplifier; the positive input end of the fifth amplifier and the positive input end of the fourth amplifier are connected on both sides of the resistor R respectively; one end of the resistor R11 is connected to the negative input end of the fourth amplifier, and the other end is connected to the positive input end of the first amplifier in series with the resistor R13; one end of the resistor R12 is connected to the negative input end of the fifth amplifier, and the other end is connected to the negative input end of the first amplifier in series with the resistor R15; one end of the resistor R14 is connected to the positive input end of the first amplifier, and the other end is grounded; the output end of the fourth amplifier is connected between the resistor R11 and the resistor R13, the output end of the fifth amplifier is connected between the resistor R12 and the resistor R15, one end of the resistor R16 is connected to the negative input end of the first amplifier, and the other end is connected to the output end of the first amplifier.

[0101] The differential amplification circuit in this embodiment is a high-impedance input differential amplification circuit, which can achieve better common-mode noise suppression and reduce noise. Compared with the method of adding a current mirror, the influence on the collection accuracy and dynamic range is smaller.

[0102] Step three, determine the limit parameter based on the amplification process at each level, and determine the i-th electric signal as the target electric signal according to the limit parameter; i=1, 2, …, n+1; when n=1, the determination method of the limit parameter includes:

[0103] The first circuit parameters and the first circuit gain parameters are determined based on the maximum reflected light power and photoelectric conversion efficiency of the reflected light signal; the first circuit gain parameter is the circuit gain parameter from the electrical signal emission node to the first node; the first node is the output terminal of the first amplifier.

[0104] The maximum saturated reflected light intensity of the second circuit is determined based on the output accuracy of the first circuit; a minimum voltage threshold and a minimum resolution threshold are preset, wherein the maximum saturated reflected light intensity satisfies that the output voltage of the first circuit is greater than or equal to the minimum voltage threshold, and the output voltage resolution of the second circuit is greater than or equal to the minimum resolution threshold;

[0105] The gain parameters of the second circuit are determined under the maximum saturated reflected light intensity; the gain parameters of the second circuit are the circuit gain from the first node to the second node; the second node is the output terminal of the second amplifier.

[0106] Obtain the output voltage value of the first circuit when the second circuit reaches maximum saturated reflected light;

[0107] The boundary parameters are obtained by subtracting the reserved redundant voltage from the output voltage of the first circuit.

[0108] Methods for determining the target electrical signal include:

[0109] When the first electrical signal is greater than or equal to the limit parameter, the first electrical signal is taken as the target electrical signal;

[0110] Otherwise, the second electrical signal is used as the target electrical signal.

[0111] The following section determines the boundary parameters based on adding a current mirror circuit, a transimpedance amplifier circuit, or a differential amplifier circuit to the first circuit described above, using the methods described above:

[0112] for Figure 7 In the case of adding a current mirror circuit to the first circuit, the voltage V1 of the first node is expressed as: V1=i*R=(η*Pi)*R; at this time, the gain parameter A1 of the first circuit is R.

[0113] The voltage V2 of the second node is expressed as: V2=V1*(1+R4 / R3)=(η*Pi)*R*B1, and the gain parameter of the second circuit is B1=1+R4 / R3; where η represents the photoelectric conversion efficiency, which is set to 1 in this embodiment; Pi represents the maximum reflected light power of the reflected light signal; the time constant τ of the filter is selected according to the noise situation of the entire circuit. For example, resistors R2 and R5 can be 1k ohms, capacitors C1 and C2 can be 0.01uF, and τ=10us, which can effectively filter out low-frequency noise.

[0114] Based on the maximum reflected light power and photoelectric conversion efficiency of the reflected light signal to be tested, appropriate first circuit parameters and first circuit gain parameters are determined. The first circuit gain parameter is the circuit gain parameter from the electrical signal emission node to the first node (i.e., point V1 in the figure) when the reflected light signal is at its maximum reflected light power. In this embodiment, it is assumed that the maximum reflected light of the reflected light signal to be tested is -13dBm (50uW) and the conversion efficiency is 1mA / mW. Then the photocurrent of the maximum reflected light signal is i = 50uW * 1mA / mW = 50uA, and the resistance R = 2.5V / 50uA = 50kΩ.

[0115] The maximum saturation reflected light intensity of the second circuit is mainly determined based on the monitoring accuracy of the first circuit output. In this example, -26dBm is chosen as the maximum saturation reflected light intensity of the second circuit. This is a result of considering that the first stage still has good monitoring accuracy at -26dBm and that the second circuit also has good monitoring accuracy at -43dBm. This value can be adjusted according to the actual situation in application. If -26dBm (2.5uW) is selected as the saturation point of the second circuit, then the gain of the second circuit is determined as: V2=(η*Pi)*R*B1; B1=V2 / (η*Pi*R)=2.5V / (2.5uA*50kΩ)=20.

[0116] To verify and ensure good accuracy and acquisition range for both segments, a simulation experiment was conducted in this embodiment. The simulation results are as follows: Figure 10 and Figure 11 As shown, Figure 10 and Figure 11 Taking B1=20, the simulation data shows that when the power of the reflected light signal is relatively high (power in the figure: -13dBm to -26dBm), the output voltage of the first circuit is greater than 125mV, which meets the minimum voltage threshold, and the voltage difference per dB is greater than 25mV. When the power of the reflected light signal is relatively low (power in the figure: -26dBm to -43dBm), the output voltage of the second circuit is greater than 50mV, and the voltage difference per dB is greater than 10mV. A 10-bit analog-to-digital converter typically has 9 effective bits, and the minimum resolvable voltage is 2.5V / 511=4.89mV, which meets the minimum resolution threshold. Therefore, the voltage values ​​of the above two segments can be accurately acquired.

[0117] for Figure 9 In the case of adding a transimpedance amplifier circuit to the first circuit, the voltage V1 of the first node is expressed as: V1 = i*R*A2 = (η*Pi)*(A2*R); where R1 = R7, R6 = R8; the gain parameter of the first circuit is A2 = R6 / R1; the voltage V2 of the second node is expressed as: V2 = V1*B2 = (η*Pi)*(A2*R)*B2, and the gain parameter of the second circuit is B2 = 1 + R4 / R3;

[0118] For Figure 8 In the case of adding a differential amplification circuit in the first circuit, the voltage V1 of the first node is represented as: V1= i*R*A3=(η*Pi)*(A3*R); wherein, R11= R12, R13= R15; R14= R16; the circuit gain parameter is A3 R; the circuit gain A3= (1+2*R11 / R10)*R14 / R13; the voltage V2 of the second node is represented as: V2=(η*Pi)*(A3*R)*B3, the second gain parameter B3=1+R4 / R3; according to the above method, the appropriate resistance R, the circuit gain A3 and the second gain parameter B3 can be determined, so that the dynamic range of the two sections of the analog-digital converter meets >30dB; similarly, if the maximum photocurrent 50uA needs to be monitored, then A3*R=2.5V / 50uA=50kΩ, if A3=10, then R=5kΩ; when the second gain parameter B3 is 20, the dynamic range greater than 30dB and better monitoring precision can be obtained, and the simulation calculation result is shown in Figure 10 and Figure 11 .

[0119] Step four, monitoring the target electrical signal, and alarming when the target electrical signal exceeds the threshold. The method comprises:

[0120] presetting an alarm threshold A and an alarm threshold B, wherein A>B;

[0121] when Qi>A, a serious alarm signal is sent;

[0122] when A>Qi>B, a general alarm signal is sent;

[0123] when B>Qi, no alarm signal is generated;

[0124] wherein, Qi is the target electrical signal.

[0125] When different methods are used to obtain the reflected light signal, the collected electrical signals are different, and the alarm thresholds set for different electrical signals are also different; specifically:

[0126] For the A implementation, the reflected light signal of the TM transverse magnetic mode part is collected, and the proportional relationship between the reflected light signal of the TM transverse magnetic mode part and the reflected light signal of the TM transverse magnetic mode part is determined according to parameters such as the system structure of the optical module and experience, so that the complete reflected light signal intensity can be monitored according to the reflected light signal of the TM transverse magnetic mode part. Specifically, the polarization state of the reflected light signal in the optical module link has certain randomness, and the complete reflected light signal intensity cannot be completely accurately determined through the reflected light signal of the TM transverse magnetic mode part, so the judgment also has certain randomness; for example, the protocol or link requires the reflected light signal intensity to be A, and three threshold values are set according to experience and data (bit error rate), which are system tolerance threshold values A, two threshold values are set according to experience and data (bit error rate), which are system tolerance threshold values A and B, and B < A; if the monitored reflected light signal intensity > A, the link must have a problem, a serious alarm is generated, the warning light is red, and the link needs to be checked for problems; if the monitored reflected light signal intensity is between A and B, the link may have a problem, a general alarm is generated, the warning light is yellow, and the engineer needs to intervene to monitor the reflection using other means to view the bit error rate to obtain the true state of the system, and if the monitored reflected light signal intensity is < B, there may be no problem, no alarm is generated, and the warning light is green; the alarm threshold value of the target electrical signal output by the collection circuit can be determined according to the above rules.

[0127] For implementation mode B1 of the B implementation, under the polarization control beam splitter structure, the phase adjustment amount (i.e. phase shift arm phase difference) of the first phase shifter group and the second phase shifter group is adjusted, and all polarization states of the output first light signal are traversed; the corresponding fifth light signal of the second light signal under all polarization states is obtained, and one or more polarization states with the largest fifth light signal are selected as target polarization states; monitoring is performed under the target polarization state, and the fifth light signal output under the target polarization state is taken as the monitoring collection object, and the alarm threshold value is set for monitoring when the first electrical signal output by the first circuit is taken as the target electrical signal or the second electrical signal output by the second circuit is taken as the target electrical signal.

[0128] For implementation mode B2 of the B implementation, under the polarization control beam splitter structure, the phase adjustment amount (i.e. phase shift arm phase difference) of the phase shifter group is adjusted, and the reflected light signal is scanned at least π / 2 period under any polarization state of the output first light signal, the trigonometric function of the reflected light signal is fitted, and 2 times the median value of the trigonometric function is taken as the determination object; similarly, when the determination object obtained by the first electrical signal or the determination object obtained by the second electrical signal is monitored, the corresponding alarm threshold value is set for monitoring.

[0129] Embodiment 2

[0130] The embodiment provides an optical module link defect monitoring system for realizing the optical module link monitoring method in embodiment 1, and the system comprises:

[0131] A detection module is configured to acquire reflected light signals in the optical module link and convert the reflected light signals into electrical signals; the detection module in the embodiment comprises an acquisition module of the reflected light signals and a photodetector.

[0132] A first amplification module is configured to perform first-stage amplification processing on the electrical signals to obtain first electrical signals;

[0133] A second amplification module is configured to perform second-stage amplification processing on the first electrical signals to obtain second electrical signals;

[0134] …;

[0135] An n-th amplification module is configured to perform (n+1)-stage amplification processing on the n-th electrical signals to obtain (n+1)-th electrical signals; n is greater than or equal to 1.

[0136] A parameter determination module is configured to determine a limit parameter based on the amplification processing at each stage, and determine the i-th electrical signal as a target electrical signal according to the limit parameter; i is equal to 1, 2, …, n+1.

[0137] An alarm module is configured to monitor the target electrical signal, and alarm when the target electrical signal exceeds an alarm threshold.

[0138] The system further comprises a scanning module configured to scan the electrical signals, and the scanning module is connected to the detection module.

[0139] In the B implementation in embodiment 1, the reflected light signals need to be continuously scanned; therefore, the scanning module shown in the embodiment is configured to perform scanning, and the scanning module comprises a digital-to-analog converter (DAC) and a sixth amplifier. Figure 12 The input end of the DAC is connected to an MCU, the output end of the DAC is connected to the positive input end of the sixth amplifier, and the negative input end of the sixth amplifier is connected to the output end of the sixth amplifier.

[0140] The scanning module is configured to scan the reflected light signals, the scanning voltage range is 0-2.5V, the load is 150 ohms, the maximum driving current is greater than 2.5V / 150 = 16.7mA, the DAC outputs a 0-2.5V voltage, and the scanning voltage function of the reflected light signals is obtained in the scanning process, and the 2 times of the median value is used as the determination threshold.

[0141] Embodiment 3

[0142] In practical applications of high-speed silicon photonics modules, there are mainly optical modules of the following types: 4-channel coarse wavelength division multiplexing (CWDM-4), 4-channel fine wavelength division multiplexing (LWDM-4), 4-channel medium-distance DR4, and 4-channel long-distance LR4, or 2 sets of 4-channel optical modules, or 8-channel optical module structures.

[0143] This embodiment uses a 4-channel example for discussion, such as... Figure 13 As shown, in colored light applications (coarse wavelength division multiplexing, CWDM and fine wavelength division multiplexing, LWDM), this high-speed silicon photonics module contains four reflected light signal acquisition units. Each reflected light signal acquisition unit includes a laser and an optical chip coupler. The four reflected light signals are acquired by an acquisition circuit, which mainly includes the first and second circuits described in embodiments 1-3 above. The signals from each reflected light signal acquisition unit are transmitted to a wavelength division multiplexer. The acquisition circuit monitors the reflected light signal of each wavelength in real time. The monitored and acquired signals (target electrical signals) are Qi (i=1, 2, 3, 4). Alarm thresholds A1 and B1 are set. When the monitored value (target electrical signal) Qi > alarm threshold A1, the optical path has a serious defect. When alarm threshold B1 < monitored value (target electrical signal) Qi < alarm threshold A1, the optical path has a defect, which has a significant impact on signal transmission performance. When monitored value Qi < alarm threshold B1, the reflected signal on the optical path is very small and has no impact on signal transmission.

[0144] like Figure 14 As shown, in white light applications (mid-range DR), four optical paths are each coupled into an optical fiber. The monitored and acquired signals are Qi (i=1, 2, 3, 4). Alarm thresholds A2 and B2 are set. When the monitored value (target electrical signal) Qi > alarm threshold A2, the optical path has a serious defect. When alarm threshold B2 < monitored value (target electrical signal) Qi < alarm threshold A2, the optical path has a defect, which has a significant impact on signal transmission performance. When monitored value (target electrical signal) Qi < alarm threshold B2, the reflected signal on the optical path is very small and has no impact on signal transmission.

[0145] Example 4

[0146] The optical module in the above embodiment supports the Common Management Interface Specification (CMIS) and monitors the reflected light signal through the observables (VDMs) in the specification. The multi-functional diagnostic monitoring VDM in CMIS 5.0 is an optional, scalable, and diagnostic monitoring function with up to 256 VDM observables.

[0147] The embodiment defines the monitoring parameter description of reflected light, the real-time monitoring value of reflected light, the alarm threshold value, the alarm state and the like in the protocol VDM of CMIS5.0 and above versions. The user can modify the threshold value according to the actual application. Take the four-channel optical module as an example. The monitoring of four reflected lights is mapped to the multifunctional diagnosis monitoring VDM193~VDM196.

[0148] The multifunctional diagnosis monitoring VDM definition is shown in Table 1.

[0149] Table 1 multifunctional diagnosis monitoring VDM definition

[0150]

[0151] The high four bits of the even address register in Table 1 are used to define which group of alarm threshold values is used for the monitoring value. The four monitoring values are all taken as '0', indicating that the 49th group of alarm threshold values is used as the common alarm threshold value. The low four bits are respectively '0', '1', '2' and '3', indicating the first, second, third and fourth reflected light intensities.

[0152] The odd address register is used to define the type of the reflected light signal monitoring value, as shown in Table 2.

[0153] Table 2 monitoring value type VDM definition

[0154]

[0155] Table 3 real-time monitoring value VDM definition

[0156]

[0157] Table 4 alarm threshold value VDM definition

[0158]

[0159] Table 5 alarm flag VDM definition

[0160]

[0161] The above Table 1 is located in the 23h page of the register, the fourth group; Table 3 is located in the 27h page of the register, the fourth group; Table 4 is located in the 2Bh page of the register, and Table 5 is located in the 2Ch page of the register; wherein 23h, 27h, 2Bh and 2Ch are hexadecimal values.

[0162] The VDM definition in the above Tables 1-5 realizes the determination of the monitoring value QI (i.e. VDM193~VDM196 defined in VDM) of the reflected light signal.

[0163] When the monitoring value (target electric signal) Qi > alarm threshold A, the optical path has serious defects, and serious alarm is generated;

[0164] Alarm threshold B < monitoring value (target electric signal) Qi < alarm threshold A, the optical path has general defects, and general alarm is generated;

[0165] Monitoring value (target electric signal) Qi < alarm threshold B, the reflected signal on the optical path is small, and no alarm is generated.

[0166] The above specific embodiments further illustrate the purpose, technical solutions and beneficial effects of the present application. It should be understood that the above description is only a specific embodiment of the present application and is not used to limit the protection scope of the present application. Any modification, equivalent replacement, improvement, etc. within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. A method of optical module link defect monitoring, the method comprising: The method comprises the following steps: acquiring a reflected light signal in a light module link and converting the reflected light signal into an electrical signal; the acquisition method of the reflected light signal comprises the following steps: a transmitting end of a light module sends a main light signal to the light module link; a returned light signal returned in the light module link is acquired; a reflected light signal is separated from the returned light signal based on a polarization control beam splitter or a polarization beam splitter; a first-level amplification process is performed on the electrical signal to obtain a first electrical signal, a second-level amplification process is performed on the first electrical signal to obtain a second electrical signal,..., and an n+1-level amplification process is performed on an n electrical signal to obtain an n+1 electrical signal; n≥1; a limit parameter is determined based on each level of amplification process, and a target electrical signal is determined according to the limit parameter; i=1, 2,..., n+1; the target electrical signal is monitored, and an alarm is prompted when the target electrical signal exceeds an alarm threshold; when the reflected light signal in the light module link is acquired based on the polarization control beam splitter separating the reflected light signal from the returned light signal, the method comprises the following steps: a transmitting end of a light module sends a first light signal, and a polarization control beam splitter performs first polarization conversion on the first light signal to obtain a second light signal and sends the second light signal to the light module link; the polarization control beam splitter performs second polarization conversion on a third light signal returned in the light module link to obtain a fourth light signal and a fifth light signal; the fourth light signal is returned to the transmitting end of the light module; the third light signal is in a random polarization state; the random polarization state means that the light signal is fixed in one or more polarization states at a certain moment; the fifth light signal is taken as the reflected light signal; when the reflected light signal in the light module link is acquired based on the polarization beam splitter separating the reflected light signal from the returned light signal, the method comprises the following steps: a transmitting end of a light module sends a sixth light signal to the light module link, the sixth light signal is in a first polarization mode; a seventh light signal returned in the light module link is acquired, and polarization separation is performed on the seventh light signal to obtain an eighth light signal and a ninth light signal; the eighth light signal is in the first polarization mode; the ninth light signal is taken as the reflected light signal.

2. The method of claim 1, wherein, When n=1, the first-level amplification process is implemented based on a first circuit, and the second-level amplification process is implemented based on a second circuit; the first circuit comprises a first amplifier, a resistor R and a first analog-to-digital converter; one end of the resistor R is connected to a negative input end of the first amplifier, and the other end of the resistor R is connected to an output end of the first amplifier; a positive input end of the first amplifier is grounded; the output end of the first amplifier is connected to the first analog-to-digital converter; the second circuit comprises a second amplifier, a resistor R3, a resistor R4 and a second analog-to-digital converter; one end of the resistor R3 is grounded, and the other end of the resistor R3 is connected to a negative input end of the second amplifier; one end of the resistor R4 is connected to an output end of the second amplifier, and the other end of the resistor R4 is connected to the negative input end of the second amplifier; the output end of the second amplifier is connected to the second analog-to-digital converter; the output end of the first amplifier is connected to a positive input end of the second amplifier.

3. A method of monitoring a link of an optical module according to claim 2, wherein The method further comprises the following steps: The current mirror circuit, the trans-impedance amplification circuit or the differential amplification circuit are connected at the input end of the first circuit; the first circuit and the second circuit both include filter circuits, which are arranged between the first amplifier and the first analog-digital converter and between the second amplifier and the second analog-digital converter.

4. The method of claim 2, wherein, When n = 1, the method for determining the limit parameter comprises: The first circuit parameter and the first circuit gain parameter are determined according to the maximum reflected light power of the reflected light signal and the photoelectric conversion efficiency; the first circuit gain parameter is the circuit gain parameter between the electric signal emission node and the first node; the first node is the output end of the first amplifier; The maximum saturated reflected light intensity of the second circuit is determined according to the output precision of the first circuit; the minimum voltage threshold and the minimum resolution threshold are preset, and the maximum saturated reflected light intensity satisfies that the output voltage of the first circuit is greater than or equal to the minimum voltage threshold, and the output voltage resolution of the second circuit is greater than or equal to the minimum resolution threshold; The second circuit gain parameter is determined under the maximum saturated reflected light intensity of the second circuit; the second circuit gain parameter is the circuit gain between the first node and the second node; the second node is the output end of the second amplifier; The first circuit output voltage value under the maximum saturated reflected light of the second circuit is acquired; The limit parameter is obtained by subtracting the reserved redundant voltage from the first circuit output voltage value.

5. The method of claim 4, wherein, The method for determining the target electric signal comprises: When the first electric signal is greater than or equal to the limit parameter, the first electric signal is taken as the target electric signal; Otherwise, the second electric signal is taken as the target electric signal.

6. A method of monitoring a link of an optical module according to claim 5, wherein The target electric signal is monitored, and an alarm prompt is given when the target electric signal exceeds the alarm threshold. The method comprises: The alarm threshold A and the alarm threshold B are preset, and A > B; When Qi > A, a serious alarm signal is given; When A > Qi > B, a general alarm signal is given; When B > Qi, no alarm signal is given; Qi is the target electric signal.

7. A method of monitoring a link of an optical module according to any one of claims 1 to 6, characterized in that, The optical module supports the common management interface specification CMIS, and the monitoring of the reflected light signal is realized through the observable quantity VDM in the specification.

8. An optical module link defect monitoring system characterized by comprising: The system for realizing the optical module link defect monitoring method of any one of claims 1-7 comprises: A detection module is configured to acquire the reflected light signal in the optical module link and convert the reflected light signal into an electric signal; A first amplification module is configured to perform first-stage amplification processing on the electric signal to obtain a first electric signal; A second amplification module is configured to perform second-stage amplification processing on the first electric signal to obtain a second electric signal; …； An nth amplification module is configured to perform (n+1)th-stage amplification processing on an nth electric signal to obtain an (n+1)th electric signal; n ≥ 1; A parameter determination module is configured to determine a limit parameter based on the amplification processing of each stage, and determine the ith electric signal as a target electric signal according to the limit parameter; i = 1, 2, …, n+1; An alarm module is configured to monitor the target electric signal and give an alarm prompt when the target electric signal exceeds an alarm threshold.

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