Alkaline middle and rough etching micro-etching solution, preparation method and micro-etching method thereof

Abstract

The application discloses a kind of alkaline medium roughing micro-etching solution and its preparation method and micro-etching method, it is related to printed circuit board production technical field.The alkaline medium roughing micro-etching solution is composed of the following mass concentration components: 5-30g / L of ammonium chloride, 0.5-2g / L of tetramethylammonium hydroxide, 5-15g / L of ammonia, 2-10% of catalyst, 0.1-1% of wetting agent, 0.2-2% of accelerator, 0.3-1.5% of stabilizer, 0.5-5% of color difference regulator, and the balance is deionized water.The application provides a kind of alkaline medium roughing micro-etching solution and its preparation method and micro-etching method, can solve the problem of circuit board surface discoloration after micro-etching, overcome the shortcoming that sulfuric acid hydrogen peroxide micro-etching system is easily polluted by chloride ion, replace sulfuric acid hydrogen peroxide with alkaline substance, can effectively improve the problem that hydrogen peroxide is easily decomposed, with stable micro-etching rate.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of printed circuit board production, and particularly relates to an alkaline roughening micro-etching solution, a preparation method thereof and a micro-etching method. BACKGROUND

[0002] With the development of global economy, especially the rapid development of microelectronic technology, military, medical and aerospace and other high-tech fields, the demand for the quality of circuit board lines in these fields is rising, and the roughening process is a unique and new process, which is applied to the production process of printed circuit boards and can improve the adhesion of dry film / ink and copper layer. Due to the complexity of printed circuit boards, including ultra-fine line width / line spacing and micro-via or blind hole technology, combined with the application of new selective surface treatment process, proper dry film / ink adhesion has become a key requirement. Traditional pretreatment processes such as mechanical grinding, volcanic ash polishing and ordinary chemical micro-etching have reached their own limits, especially in the face of new technologies, the above pretreatment often cannot meet the requirements of new technologies.

[0003] Roughening is a simple process that produces an average and fine organic metal rough surface through micro-etching. The traditional sulfuric acid hydrogen peroxide roughening process produces a deep copper surface color after the production board is treated by the roughening process, which is not conducive to the application of automatic optical inspection and positioning process. At the same time, the decomposition of hydrogen peroxide has been a problem that has plagued the industry in the sulfuric acid hydrogen peroxide roughening process. SUMMARY

[0004] In view of the deficiencies of the prior art, the present application provides an alkaline roughening micro-etching solution, a preparation method thereof and a micro-etching method, which can solve the problem of discoloration of the circuit board after micro-etching, improve the problem of many false points in the AOI (AOI: automatic optical inspection) process, and overcome the disadvantage that the sulfuric acid hydrogen peroxide micro-etching system is easily polluted by chloride ions. Using alkaline substances instead of sulfuric acid hydrogen peroxide can effectively improve the problem of easy decomposition of hydrogen peroxide, has a stable micro-etching rate, and greatly improves the quality yield, and is simple and convenient to operate.

[0005] In the first aspect, an alkaline roughening micro-etching solution is provided, which is composed of the following mass concentration components: ammonium chloride 5-30 g / L, tetramethylammonium hydroxide 0.5-2 g / L, ammonia water 5-15 g / L, catalyst 2-10%, wetting agent 0.1-1%, accelerator 0.2-2%, stabilizer 0.3-1.5%, color difference regulator 0.5-5%, and the rest is deionized water;

[0006] The catalyst is selected from at least one of tetramethyl ethylenediamine, ferric chloride and cyclohexanediamine;

[0007] The wetting agent is selected from at least one of sodium alkyl sulfate, polysorbate 80 and sodium sulfosuccinimide dioctyl ester;

[0008] the accelerator is selected from at least one of tridodecylmethylammonium chloride, triethanolamine, 2-aminobenzimidazole;

[0009] the stabilizer is selected from at least one of polyacrylamide, sodium dihydrogen phosphate, lauryl amide;

[0010] the color difference regulator is selected from at least one of sodium polydithiobis propane sulfonate, methylene bisnaphthalene sulfonic acid sodium, fatty amine polyoxyethylene ether.

[0011] Further, the mass ratio of the catalyst and the wetting agent is 1: (0.02-0.2).

[0012] Further, the mass percentage of the catalyst in the alkaline medium roughening micro-etching solution is 5-7%.

[0013] Further, the mass percentage of the wetting agent in the alkaline medium roughening micro-etching solution is 0.4-0.6%.

[0014] Preferably, the mass percentage of the accelerator in the alkaline medium roughening micro-etching solution is 0.8-1.2%.

[0015] Preferably, the mass percentage of the stabilizer in the alkaline medium roughening micro-etching solution is 0.8-1.2%.

[0016] Preferably, the mass percentage of the color difference regulator in the alkaline medium roughening micro-etching solution is 2-3%.

[0017] Further, the mass content of ammonium chloride in the alkaline medium roughening micro-etching solution is 18-22 g / L, the mass content of tetramethylammonium hydroxide in the alkaline medium roughening micro-etching solution is 0.8-1.2 g / L, and the mass content of ammonia in the alkaline medium roughening micro-etching solution is 8-12 g / L.

[0018] Further, the alkaline medium roughening micro-etching solution is composed of the following mass concentration components: ammonium chloride 18-22 g / L, tetramethylammonium hydroxide 0.8-1.2 g / L, ammonia 8-12 g / L, catalyst 5-7%, wetting agent 0.4-0.6%, accelerator 0.8-1.2%, stabilizer 0.8-1.2%, color difference regulator 2-3%, and the balance is deionized water.

[0019] In a second aspect, a preparation method of the alkaline medium roughening micro-etching solution according to the first aspect is provided, which comprises the following steps: adding ammonium chloride, tetramethylammonium hydroxide, ammonia, catalyst, wetting agent, accelerator, stabilizer, and color difference regulator into deionized water and mixing and stirring to obtain the alkaline medium roughening micro-etching solution.

[0020] Preferably, the mixing and stirring time is 20-60 min.

[0021] In a third aspect, there is provided a method for etching a board surface using the alkaline medium-roughening etching solution of the first aspect, comprising the following steps: using the alkaline medium-roughening etching solution of the first aspect, and performing horizontal line spraying on the board surface of the circuit board at an etching speed of 2-8 m / min.

[0022] Further, the spraying pressure of the horizontal line spraying is 1.5-2.5 kg / cm 2 , and the etching time is 0.5-1.5 min.

[0023] Further, the temperature of the board surface etching is 25-35℃.

[0024] Preferably, the etching speed is 3-4 m / min.

[0025] Preferably, the temperature of the board surface etching is 28-32℃.

[0026] Preferably, the alkaline medium-roughening etching solution is used at a concentration of 100 wt% in the etching method.

[0027] The present application has the following advantages:

[0028] (1) The alkaline medium-roughening etching solution uses low-toxicity or non-toxic chemical components, reducing environmental pollution. It can also provide more stable etching effects and reduce fluctuations in the etching process, thereby improving processing efficiency and precision. By optimizing the formula and process of the etching solution, material consumption and energy consumption during the etching process can be reduced, thereby reducing the overall processing cost;

[0029] (2) The alkaline medium-roughening etching solution overcomes the disadvantage of the sulfuric acid hydrogen peroxide etching system being easily contaminated by chloride ions. Using alkaline substances instead of sulfuric acid hydrogen peroxide can effectively improve the problem of hydrogen peroxide being easily decomposed;

[0030] (3) Through the interaction of the effective components in the alkaline medium-roughening etching solution, the microstructure of the copper surface is changed, forming a uniform rough structure, which makes the subsequent coating layer (such as the green oil layer) more firmly combined with the copper surface, avoiding falling off. The color of the etched board surface is close to the base copper plate, making it easier to pass through the subsequent AOI (AOI: automatic optical inspection) scanning, reducing the number of false point occurrences, thereby saving time and improving work efficiency;

[0031] (4) For precise fine lines (such as lines below 2 mil), the roughness of the line edge is improved through etching and roughening, reducing the phenomenon of micro-short circuits, and improving the yield of finished products. BRIEF DESCRIPTION OF DRAWINGS

[0032] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings needed in the embodiment description. Obviously, the drawings described below are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor on the basis of these drawings.

[0033] Figure 1 The effect diagram of the production line test of the alkaline middle roughing micro-etching solution of the present application embodiment 1;

[0034] Figure 2 The effect diagram of the production line test of the alkaline middle roughing micro-etching solution of the present application embodiment 2;

[0035] Figure 3 The effect diagram of the production line test of the alkaline middle roughing micro-etching solution of the present application embodiment 3;

[0036] Figure 4 The effect diagram of the production line test of the alkaline middle roughing micro-etching solution of the present application embodiment 4;

[0037] Figure 5 The effect diagram of the production line test of the alkaline middle roughing micro-etching solution of the present application comparative example 1;

[0038] Figure 6 The effect diagram of the production line test of the alkaline middle roughing micro-etching solution of the present application comparative example 2;

[0039] Figure 7 The effect diagram of the production line test of the alkaline middle roughing micro-etching solution of the present application comparative example 3;

[0040] Figure 8 The effect diagram of the production line test of the alkaline middle roughing micro-etching solution of the present application comparative example 4. DETAILED DESCRIPTION

[0041] The technical solutions in the embodiments of the present application will be described clearly and completely below. Obviously, the described embodiments are some embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor are within the protection scope of the present application.

[0042] It should be understood that, when used in the specification and the appended claims, the terms "comprise" and "include" indicate the presence of the described features, integers, steps, operations, elements, and / or components, but do not exclude one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0043] It should also be understood that the terms used in the specification and the claims are for the purpose of describing particular embodiments thereof and are not intended to be limiting thereof. As used in this specification and the appended claims, the singular forms "a," "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

[0044] It should further be understood that the term "and / or" as used in the specification and the claims is used to mean any one of the items in the list, as well as combinations of one or more of the items in the list.

[0045] For a more complete understanding of the technical content of the present application, the technical solutions of the present application are further introduced and described below in combination with specific embodiments.

[0046] Unless otherwise specified, "%" in the present application is mass percentage.

[0047] Micro-etching method of alkaline medium roughening micro-etching solution

[0048] The micro-etching method of alkaline medium roughening micro-etching solution comprises the following procedures: S1, plate loading; S2, acid washing; S3, water washing; S4, plate grinding; S5, water washing; S6, micro-etching (medium roughening); S7, water washing; S8, drying; and S9, plate unloading.

[0049] The S6 micro-etching step is as follows: first, the alkaline medium roughening micro-etching solution of the embodiments or the comparative examples is used to open the cylinder in the horizontal micro-etching line, and the temperature is raised to 25-35℃. Then, the line board is subjected to plate grinding treatment, and the line board is subjected to plate surface micro-etching at a micro-etching speed of 2-8 m / min in a horizontal line spraying mode. The spraying pressure of the horizontal line spraying mode is 1.5-2.5 kg / cm 2 , and the micro-etching time is 0.5-1.5 min. Finally, the micro-etched line board is subjected to water washing in step S7, drying in step S8, and plate unloading in step S9.

[0050] Preferably, the spraying pressure of the horizontal line spraying is 1.8-2.2 kg / cm 2 .

[0051] Preferably, the temperature of the temperature raising is 28-32℃.

[0052] Preferably, the micro-etching speed is 3-4 m / min.

[0053] Preferably, the opening cylinder amount of the alkaline medium roughening micro-etching solution in the opening cylinder is 100 wt% concentration.

[0054] Effect verification test (line test) of alkaline medium roughening micro-etching solution

[0055] The basic medium roughing etching solution of the examples and the comparative examples is respectively taken to open the tank as an etching line solution with a concentration of 100wt% on the production line. After the etching line solution is heated to 30℃, the circuit board treated by the etching method of the basic medium roughing etching solution is respectively put into the corresponding etching line. The etching speed is 6m / min, the spraying pressure is 2.0kg / cm 2 , the etching time is 1min, and the circuit board after etching is washed and dried.

[0056] Example 1

[0057] A basic medium roughing etching solution is composed of the following mass concentration components: 18g / L of ammonium chloride, 0.8g / L of tetramethylammonium hydroxide, 8g / L of ammonia, 5% of tetramethyl ethylenediamine, 0.4% of alkyl sulfate sodium, 0.8% of tridodecylmethyl ammonium chloride, 0.8% of polyacrylamide, 2% of polydithiopropane sulfonic acid sodium, and the balance is deionized water.

[0058] The preparation method of the basic medium roughing etching solution comprises the following steps: ammonium chloride, tetramethylammonium hydroxide, ammonia, catalyst, wetting agent, accelerator, stabilizer, and color difference regulator are added into deionized water and mixed and stirred for 40min to obtain the basic medium roughing etching solution of Example 1.

[0059] The etching method of the basic medium roughing etching solution comprises the following steps:

[0060] S1 board feeding; S2 acid washing; S3 water washing; S4 board grinding; S5 water washing; S6 medium roughing; S7 water washing; S8 drying; and S9 board collecting.

[0061] The S6 etching step is as follows: firstly, the basic medium roughing etching solution is opened in the etching horizontal line, and heated to 28℃. Then, the circuit board is ground, and the circuit board is etched in a horizontal line spraying manner at an etching speed of 6m / min. The spraying pressure is 1.5kg / cm 2 , the etching time is 1.0min, and the opening amount of the basic medium roughing etching solution in the chemical water opening is 100wt%.

[0062] The preparation method of the basic medium roughing etching solution of Examples 2-9 is the same as that of Example 1.

[0063] Example 2

[0064] A basic medium roughening micro-etching solution is composed of the following components with mass concentration: 19 g / L of ammonium chloride, 0.9 g / L of tetramethylammonium hydroxide, 10 g / L of ammonia water, 5% of ferric chloride, 0.5% of polysorbate 80, 0.8% of tridodecylmethylammonium chloride, 0.9% of sodium dihydrogen phosphate, 2.5% of sodium methylene bisnaphthalene sulfonate, and the balance of deionized water.

[0065] The micro-etching method of the basic medium roughening micro-etching solution of Example 2 is different from that of Example 1 in that the S6 micro-etching step of Example 2 is: first, the basic medium roughening micro-etching solution is used to open the cylinder at the micro-etching level, and the temperature is raised to 29℃. Then, the circuit board is subjected to grinding treatment, and the circuit board is subjected to surface micro-etching in a horizontal line spraying manner at a micro-etching speed of 4 m / min, the spraying pressure is 1.5 kg / cm 2 , the micro-etching time is 1.0 min, and the opening cylinder amount of the basic medium roughening micro-etching solution in the chemical water opening cylinder is 100 wt%.

[0066] Example 3

[0067] A basic medium roughening micro-etching solution is composed of the following components with mass concentration: 20 g / L of ammonium chloride, 0.8 g / L of tetramethylammonium hydroxide, 11 g / L of ammonia water, 7% of cyclohexanediamine, 0.6% of sodium dioctyl sulfosuccinate, 0.8% of tridodecylmethylammonium chloride, 0.8% of polyacrylamide, 2% of sodium polydithiopropanesulfonate, and the balance of deionized water.

[0068] The micro-etching method of the basic medium roughening micro-etching solution of Example 3 is different from that of Example 1 in that the S6 micro-etching step of Example 3 is: first, the basic medium roughening micro-etching solution is used to open the cylinder at the micro-etching level, and the temperature is raised to 30℃. Then, the circuit board is subjected to grinding treatment, and the circuit board is subjected to surface micro-etching in a horizontal line spraying manner at a micro-etching speed of 7 m / min, the spraying pressure is 1.5 kg / cm 2 , the micro-etching time is 1.1 min, and the opening cylinder amount of the basic medium roughening micro-etching solution in the chemical water opening cylinder is 100 wt%.

[0069] Example 4

[0070] A basic medium roughening micro-etching solution is composed of the following components with mass concentration: 19 g / L of ammonium chloride, 1.2 g / L of tetramethylammonium hydroxide, 8 g / L of ammonia water, 5% of ferric chloride, 0.6% of polysorbate 80, 0.8% of tridodecylmethylammonium chloride, 1.1% of lauryl amide, 2.5% of sodium methylene bisnaphthalene sulfonate, and the balance of deionized water.

[0071] The etching method of the basic medium roughening etching solution of Example 4 is different from that of Example 1 in that the S6 etching step of Example 4 is: first, the basic medium roughening etching solution is used to open the cylinder at the etching level, and the temperature is raised to 29°C. Then, the circuit board is ground, and the circuit board is etched on the surface at an etching speed of 6 m / min in the form of horizontal line spraying, the spraying pressure is 1.5 kg / cm 2 , the etching time is 1.3 min, and the opening amount of the basic medium roughening etching solution in the chemical solution opening cylinder is 100 wt%.

[0072] Example 5

[0073] A basic medium roughening etching solution is composed of the following mass concentration components: 20 g / L of ammonium chloride, 1.0 g / L of tetramethylammonium hydroxide, 12 g / L of ammonia, 7% of tetramethyl ethylenediamine, 0.7% of polysorbate 80, 1.0% of 2-aminobenzimidazole, 0.9% of lauryl amide, 3% of fatty amine polyoxyethylene ether, and the balance is deionized water.

[0074] The etching method of the basic medium roughening etching solution of Example 5 is different from that of Example 1 in that the S6 etching step of Example 5 is: first, the basic medium roughening etching solution is used to open the cylinder at the etching level, and the temperature is raised to 32°C. Then, the circuit board is ground, and the circuit board is etched on the surface at an etching speed of 8 m / min in the form of horizontal line spraying, the spraying pressure is 2 kg / cm 2 , the etching time is 1.3 min, and the opening amount of the basic medium roughening etching solution in the chemical solution opening cylinder is 100 wt%.

[0075] Example 6

[0076] A basic medium roughening etching solution is composed of the following mass concentration components: 15 g / L of ammonium chloride, 0.5 g / L of tetramethylammonium hydroxide, 10 g / L of ammonia, 4% of ferric chloride, 0.5% of sodium dioctyl sulfosuccinate, 0.8% of trilaurylmethyl ammonium chloride, 1.2% of lauryl amide, 3% of sodium polydithiopropane sulfonate, and the balance is deionized water.

[0077] The etching method of the basic medium roughening etching solution of Example 6 is different from that of Example 1 in that the S6 etching step of Example 6 is: first, the basic medium roughening etching solution is used to open the cylinder at the etching level, and the temperature is raised to 26°C. Then, the circuit board is ground, and the circuit board is etched on the surface at an etching speed of 6 m / min in the form of horizontal line spraying, the spraying pressure is 2.5 kg / cm 2 , the etching time is 1.5 min, and the opening amount of the basic medium roughening etching solution in the chemical solution opening cylinder is 100 wt%.

[0078] Example 7

[0079] A basic middle roughing micro-etching solution, consisting of the following mass concentration components: 22 g / L of ammonium chloride, 1.0 g / L of tetramethylammonium hydroxide, 12 g / L of ammonia, 8% of cyclohexanediamine, 0.6% of sodium alkyl sulfate, 1.0% of triethanolamine, 0.8% of sodium dihydrogen phosphate, 2% of sodium methylene bisnaphthalene sulfonate, and the balance being deionized water.

[0080] The micro-etching method of the basic middle roughing micro-etching solution of Example 7 differs from that of Example 1 in that the S6 micro-etching step of Example 7 is as follows: first, the basic middle roughing micro-etching solution is opened in the micro-etching line at a temperature of 30°C. Then, the circuit board is ground, and the board surface is micro-etched at a micro-etching speed of 7 m / min in a horizontal line spraying manner, the spraying pressure being 1.8 kg / cm 2 , the micro-etching time being 1.0 min, and the opening amount of the basic middle roughing micro-etching solution in the opening of the solution in the line being 100 wt%.

[0081] Example 8

[0082] A basic middle roughing micro-etching solution, consisting of the following mass concentration components: 16 g / L of ammonium chloride, 1.0 g / L of tetramethylammonium hydroxide, 8 g / L of ammonia, 6% of tetramethylethylenediamine, 0.7% of sodium dioctyl sulfosuccinate, 1.0% of 2-aminobenzimidazole, 1.2% of lauryl amide, 1.5% of fatty amine polyoxyethylene ether, and the balance being deionized water.

[0083] The micro-etching method of the basic middle roughing micro-etching solution of Example 8 differs from that of Example 1 in that the S6 micro-etching step of Example 8 is as follows: first, the basic middle roughing micro-etching solution is opened in the micro-etching line at a temperature of 28°C. Then, the circuit board is ground, and the board surface is micro-etched at a micro-etching speed of 5 m / min in a horizontal line spraying manner, the spraying pressure being 1.7 kg / cm 2 , the micro-etching time being 1.1 min, and the opening amount of the basic middle roughing micro-etching solution in the opening of the solution in the line being 100 wt%.

[0084] Example 9

[0085] A basic middle roughing micro-etching solution, consisting of the following mass concentration components: 21 g / L of ammonium chloride, 0.8 g / L of tetramethylammonium hydroxide, 11 g / L of ammonia, 6% of ferric chloride, 0.7% of sodium dioctyl sulfosuccinate, 1.2% of trilaurylmethylammonium chloride, 1.2% of lauryl amide, 2.3% of sodium polydithiopropanesulfonate, and the balance being deionized water.

[0086] The etching method of the alkaline medium roughening etching solution of Example 9 is different from that of Example 1 in that the S6 etching step of Example 9 is as follows: first, the alkaline medium roughening etching solution is opened in the etching line at an etching level, and the temperature is raised to 28°C. Then, the circuit board is subjected to grinding treatment, and the circuit board is etched on the surface in the horizontal line spraying mode at an etching speed of 8 m / min, the spraying pressure is 1.5 kg / cm 2 , the etching time is 1.5 min, and the opening amount of the alkaline medium roughening etching solution in the chemical solution opening is 100 wt%.

[0087] To better illustrate the technical effects of the present application, Comparative Examples 1-9 are set based on Example 1, and the differences between Comparative Examples 1-9 and Example 1 are shown in Table 1 as follows:

[0088] Table 1 Differences between Comparative Examples 1-9 and Example 1

[0089]

[0090] Comparative Examples 1-9 and Example 1 differ only in the composition of the alkaline medium roughening etching solution, and the rest of the conditions are the same.

[0091] To further illustrate the technical effects of the present application, the following tests are carried out for verification.

[0092] I. Component effect verification test of alkaline medium roughening etching solution

[0093] 1) The circuit boards treated by the alkaline medium roughening etching solution of Examples 1-9 by the etching method are subjected to line production test, and the test results are shown in Table 2:

[0094] Table 2 Line production test results of the alkaline medium roughening etching solution of Examples 1-9

[0095]

[0096] 2) The circuit boards treated by the alkaline medium roughening etching solution of Comparative Examples 1-9 by the etching method are subjected to line production test, and the test results are shown in Table 3:

[0097] Table 3 Line production test results of the alkaline medium roughening etching solution of Comparative Examples 1-9

[0098]

[0099] Among them, the effect diagram of the line production test of the alkaline medium roughening etching solution of Example 1 of the present application is shown in Figure 1 , the effect diagram of the line production test of the alkaline medium roughening etching solution of Example 2 of the present application is shown in Figure 2 , and the effect diagram of the line production test of the alkaline medium roughening etching solution of Example 3 of the present application is shown in Figure 3As shown in the picture, the effect of the production line test of the alkaline roughing micro-etching solution of Example 4 of the present application is as shown in the picture Figure 4 As shown in the picture, the effect of the production line test of the alkaline roughing micro-etching solution of Example 4 of the present application is as shown in the picture Figure 5 As shown in the picture, the effect of the production line test of the alkaline roughing micro-etching solution of Example 4 of the present application is as shown in the picture Figure 6 As shown in the picture, the effect of the production line test of the alkaline roughing micro-etching solution of Example 4 of the present application is as shown in the picture Figure 7 As shown in the picture, the effect of the production line test of the alkaline roughing micro-etching solution of Example 4 of the present application is as shown in the picture Figure 8 As shown in the picture, the effect of the production line test of the alkaline roughing micro-etching solution of Example 4 of the present application is as shown in the picture

[0100] From the picture, it can be seen that the board surface color after micro-etching of Examples 1-9 is lighter, the board surface color is close to the color of the base material copper-clad plate, and the number of false points in the AOI process can be effectively reduced. The board surface color after micro-etching of Comparative Examples 1-9 is darker, the board surface color is dark red, and the number of false points in the AOI process is easily increased. Figures 1-8 The test results of Tables 2-3 show that when one or more components are missing from the alkaline roughing micro-etching solution, the etching speed and quality are greatly affected. Therefore, the present application improves the etching rate of the circuit board and reduces quality problems such as open circuit, short circuit, and gap by the interaction between ammonium chloride, ammonia, tetramethylammonium hydroxide, catalyst, wetting agent, stabilizer, accelerator, and color difference regulator in the alkaline roughing micro-etching solution.

[0101] II. Influence based on different mass concentrations of ammonium chloride

[0102] Comparative Examples 10-12 differ from Example 1 in that the mass concentration of ammonium chloride is different, and the other conditions are the same. The circuit boards treated by the micro-etching method using the alkaline roughing micro-etching solution of Example 1 and Comparative Examples 10-12 are subjected to production line testing, and the test results are shown in Table 4:

[0103] Table 4 Production line test results of Example 1 and Comparative Examples 10-12

[0104]

[0105] From the test results in Table 4, it can be seen that the production line test result is not ideal when no ammonium chloride is added to the above-mentioned alkaline roughing micro-etching solution (Comparative Example 10). When the mass concentration of ammonium chloride is less than 5 g / L (Comparative Example 10) or higher than 30 g / L (Comparative Example 11), the production line test result is not ideal. Therefore, the mass concentration of ammonium chloride in the alkaline roughing micro-etching solution is preferably 5-30 g / L.

[0106] III. Influence based on different mass concentrations of catalyst

[0107] Comparative Example 7, Comparative Examples 13-14 differ from Example 1 in the mass concentration of the catalyst, and the rest of the conditions are the same. The line test is performed on the circuit board treated by the micro-etching method using the basic middle roughing micro-etching solution of Example 1, Comparative Example 7, Comparative Examples 13-14, and the test results are shown in Table 5:

[0108] Table 5 Line test results of Example 1, Comparative Example 7, Comparative Examples 13-14

[0109]

[0110] From the test results in Table 5, it can be seen that the line test results are not ideal when no catalyst is added to the above-mentioned basic middle roughing micro-etching solution (Comparative Example 7). When the mass concentration of the catalyst is less than 2% (Comparative Example 13) or more than 10% (Comparative Example 14), the line test results are not ideal. Therefore, the mass concentration of the catalyst in the basic middle roughing micro-etching solution is preferably 2-10%.

[0111] Four, the influence based on different mass concentrations of wetting agents

[0112] Comparative Example 5, Comparative Examples 15-16 differ from Example 1 in the mass concentration of the wetting agent, and the rest of the conditions are the same. The line test is performed on the circuit board treated by the micro-etching method using the basic middle roughing micro-etching solution of Example 1, Comparative Example 5, Comparative Examples 15-16, and the test results are shown in Table 6:

[0113] Table 6 Line test results of Example 1, Comparative Example 5, Comparative Examples 15-16

[0114]

[0115] From the test results in Table 6, it can be seen that the line test results are not ideal when no wetting agent is added to the above-mentioned basic middle roughing micro-etching solution (Comparative Example 5). When the mass concentration of the wetting agent is less than 0.1% (Comparative Example 15) or more than 1.0% (Comparative Example 16), the line test results are not ideal. Therefore, the mass concentration of the wetting agent in the basic middle roughing micro-etching solution is preferably 0.1-1.0%.

[0116] Five, the influence based on different mass concentrations of accelerators

[0117] Comparative Example 6, Comparative Examples 17-18 differ from Example 1 in the mass concentration of the accelerator, and the rest of the conditions are the same. The line test is performed on the circuit board treated by the micro-etching method using the basic middle roughing micro-etching solution of Example 1, Comparative Example 6, Comparative Examples 17-18, and the test results are shown in Table 7:

[0118] Table 7 Line test results of Example 1, Comparative Example 6, Comparative Examples 17-18

[0119]

[0120] From the test results of Table 7, it can be seen that the above-mentioned alkaline medium roughening micro-etching solution does not add an accelerator (Comparative Example 6), and the production line test result is not ideal. The mass concentration of the accelerator is less than 0.2% (Comparative Example 17) or higher than 2.0% (Comparative Example 18), and the production line test result is not ideal. Therefore, the mass concentration of the accelerator in the alkaline medium roughening micro-etching solution is preferably 0.2-2.0%.

[0121] Six, the influence based on different mass concentrations of stabilizers

[0122] Comparative Example 4, Comparative Examples 19-20 differ from Example 1 in the mass concentration of the stabilizer, and the rest of the conditions are the same. The circuit boards treated by the micro-etching method using the alkaline medium roughening micro-etching solution of Example 1, Comparative Example 4, Comparative Examples 19-20 are subjected to production line testing, and the test results are shown in Table 8:

[0123] Table 8 Production line test results of Example 1, Comparative Example 4, Comparative Examples 19-20

[0124]

[0125] From the test results of Table 8, it can be seen that the above-mentioned alkaline medium roughening micro-etching solution does not add a stabilizer (Comparative Example 4), and the production line test result is not ideal. The mass concentration of the accelerator is less than 0.3% (Comparative Example 19) or higher than 1.5% (Comparative Example 20), and the production line test result is not ideal. Therefore, the mass concentration of the stabilizer in the alkaline medium roughening micro-etching solution is preferably 0.3-1.5%.

[0126] Seven, the influence based on different mass concentrations of color difference adjustors

[0127] Comparative Example 3, Comparative Examples 21-22 differ from Example 1 in the mass concentration of the color difference adjustor, and the rest of the conditions are the same. The circuit boards treated by the micro-etching method using the alkaline medium roughening micro-etching solution of Example 1, Comparative Example 3, Comparative Examples 21-22 are subjected to production line testing, and the test results are shown in Table 9:

[0128] Table 9 Production line test results of Example 1, Comparative Example 3, Comparative Examples 21-22

[0129]

[0130] From the test results of Table 9, it can be seen that the above-mentioned alkaline medium roughening micro-etching solution does not add a color difference adjustor (Comparative Example 3), and the production line test result is not ideal. The mass concentration of the color difference adjustor is less than 0.5% (Comparative Example 20) or higher than 5% (Comparative Example 21), and the production line test result is not ideal. Therefore, the mass concentration of the color difference adjustor in the alkaline medium roughening micro-etching solution is preferably 0.5-5%.

[0131] Eight, the influence based on different mass ratio of catalyst and humectant 1: (0.02-0.2);

[0132] The difference between Comparative Examples 23-24 and Example 1 is the mass ratio of catalyst and humectant, and the rest of the conditions are the same. The circuit boards treated by the microetching method using the alkaline roughing microetching solution of Example 1 and Comparative Examples 23-24 are tested in the production line, and the test results are shown in Table 10:

[0133] Table 10 Test results of Example 1 and Comparative Examples 23-24 in the production line

[0134]

[0135] From the test results in Table 10, when the proportion of humectant in the mass ratio of catalyst and humectant in the alkaline roughing microetching solution is small (Comparative Example 22) or the proportion of humectant in the mass ratio of catalyst and humectant is large (Comparative Example 23), the test results in the production line are not ideal. Therefore, the mass ratio of catalyst and humectant in the alkaline roughing microetching solution is preferably 1: (0.02-0.2).

[0136] In summary, the present application provides an alkaline roughing microetching solution, a preparation method thereof and a microetching method, which can solve the problem of discoloration of the circuit board after microetching, overcome the disadvantage that the sulfuric acid hydrogen peroxide microetching system is easily contaminated by chloride ions, replace sulfuric acid hydrogen peroxide with alkaline substances, effectively improve the problem that hydrogen peroxide is easily decomposed, and have a stable microetching rate.

[0137] The above is only a specific embodiment of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art can easily think of various equivalent modifications or replacements within the technical scope disclosed by the present application, and these modifications or replacements should be covered within the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. An alkaline, coarsening micro-etching solution, characterized in that, It consists of the following components in mass concentration: ammonium chloride 5-30 g / L, tetramethylammonium hydroxide 0.5-2 g / L, ammonia water 5-15 g / L, catalyst 2-10%, wetting agent 0.1-1%, accelerator 0.2-2%, stabilizer 0.3-1.5%, color difference adjuster 0.5-5%, and the balance is deionized water; The catalyst is selected from at least one of tetramethylethylenediamine, ferric chloride, and cyclohexanediamine; The wetting agent is selected from at least one of sodium alkyl sulfate, polysorbate 80, and sodium dioctyl sulfosuccinate; The accelerator is selected from at least one of lauryl methyl ammonium chloride, triethanolamine, and 2-aminobenzimidazole; The stabilizer is selected from at least one of polyacrylamide, sodium dihydrogen phosphate, and laurylamide; The color difference adjuster is selected from at least one of sodium polydisulfide dipropane sulfonate, sodium methylene dinaphthalene sulfonate, and fatty amine polyoxyethylene ether.

2. The alkaline coarsening micro-etching solution as described in claim 1, characterized in that, The mass ratio of the catalyst to the wetting agent is 1:(0.02-0.2).

3. The alkaline coarsening micro-etching solution as described in claim 1, characterized in that, The catalyst accounts for 5-7% of the mass of the alkaline coarsening micro-etching solution.

4. The alkaline coarsening micro-etching solution as described in claim 1, characterized in that, The wetting agent accounts for 0.4-0.6% of the mass of the alkaline coarsening micro-etching solution.

5. The alkaline coarsening micro-etching solution as described in claim 1, characterized in that, The ammonium chloride content in the alkaline roughening micro-etching solution is 18-22 g / L, the tetramethylammonium hydroxide content in the alkaline roughening micro-etching solution is 0.8-1.2 g / L, and the ammonia content in the alkaline roughening micro-etching solution is 8-12 g / L.

6. The alkaline coarsening micro-etching solution as described in claim 1, characterized in that, It consists of the following components in mass concentration: ammonium chloride 18-22 g / L, tetramethylammonium hydroxide 0.8-1.2 g / L, ammonia water 8-12 g / L, catalyst 5-7%, wetting agent 0.4-0.6%, accelerator 0.8-1.2%, stabilizer 0.8-1.2%, color difference adjuster 2-3%, and the balance is deionized water.

7. The method for preparing the alkaline coarsening micro-etching solution according to any one of claims 1-6, characterized in that, Includes the following steps: Ammonium chloride, tetramethylammonium hydroxide, ammonia, catalyst, wetting agent, accelerator, stabilizer, and color difference modifier are added to deionized water and mixed and stirred to obtain an alkaline coarsening micro-etching solution.

8. The micro-etching method using an alkaline coarsening micro-etching solution as described in any one of claims 1-6, characterized in that, Includes the following steps: Using the alkaline coarsening micro-etching solution described in any one of claims 1-6, the circuit board surface is micro-etched by spraying horizontally at a micro-etching speed of 2-8 m / min.

9. The micro-etching method using an alkaline coarsening micro-etching solution as described in claim 8, characterized in that, The spray pressure of the horizontal spraying method is 1.5-2.5 kg / cm². 2 The micro-etching time is 0.5-1.5 min.

10. The micro-etching method using an alkaline coarsening micro-etching solution as described in claim 8, characterized in that, The temperature for micro-etching the board surface is 25-35℃.

Images