Method for testing single-energy electron total dose shielding rate of packaged and reinforced integrated circuit based on electrical parameter change

Abstract

The invention discloses a method for testing the single-energy electron total dose shielding rate of a packaged and reinforced integrated circuit based on electrical parameter change, belongs to the field of radiation hardening of semiconductor devices, and solves the problems of long time consumption, high cost and high reliability in direct testing of a circuit failure threshold in the prior art. The problems that systematic deviation exists in engineering conversion due to the fact that a material shielding test excessively focuses on source attributes but neglects actual space environment equivalence, deposition dose cannot be accurately obtained, and a quantitative mapping relation between material shielding and circuit function degradation is not established are solved. According to the method, the total dose radiation resistance is further obtained by obtaining the relation between the failure threshold value of the unreinforced circuit, the fitting dose and the electrical parameters and deducing the deposition dose and the shielding rate of the sensitive area of the packaging reinforced circuit, the material shielding performance evaluation precision is improved, the test time is shortened, the cost is reduced, and a reliable basis is provided for packaging reinforced design; and the reliability of the integrated circuit in a space radiation environment is enhanced.

Description

Technical Field

[0001] The present invention relates to the field of radiation resistance reinforcement of semiconductor devices, and in particular to a method for testing the total monoenergetic electron dose shielding rate of a packaged reinforced integrated circuit based on changes in electrical parameters. Background Art

[0002] The space environment is rife with high-energy radiation, such as high-energy electrons, high-energy protons, and heavy ions. These radiation effects in integrated circuits (ICs) can produce various effects, including total dose effects, single-event effects, and displacement damage. These effects can severely impact the operational stability of integrated circuits and even cause damage, shortening their service life and posing a significant challenge to the reliability and safety of spacecraft used in space. Therefore, specialized radiation hardening should be performed before integrated circuits are used in aerospace applications. Typical radiation hardening methods include design hardening, process hardening, and packaging hardening. Package hardening, among other things, reduces the amount of radiation energy reaching sensitive areas of the IC through material shielding. It offers the advantages of low cost, short development cycles, and wide applicability, and can rapidly improve the total dose radiation resistance of integrated circuits. Accurately assessing the total dose radiation resistance of package-hardened ICs is crucial for ensuring their reliability, safety, and extended service life in the space radiation environment. Current methods for testing the total dose radiation resistance of package-hardened ICs primarily involve directly exposing the IC to total dose radiation and evaluating the total dose resistance of the circuit using electrical parameter failure thresholds. This method is time-consuming and costly.

[0003] For packaged and ruggedized integrated circuits, their total radiation dose resistance is closely related to the radiation shielding performance of the materials used. Therefore, accurately evaluating the radiation shielding capability of the packaging and reinforcement materials used is extremely critical. However, current testing methods for material radiation shielding capability still have certain limitations: First, current schemes overly focus on the intrinsic properties of the material, such as shielding efficiency, while ignoring the equivalence of packaged and ruggedized integrated circuits in real-world space environments. Second, the deposited dose in sensitive areas of packaged and ruggedized integrated circuits subjected to total radiation dose is a key parameter determining the degree of radiation damage to the circuit. However, current radiation shielding testing methods cannot accurately obtain the deposited dose value, resulting in systematic deviations in the engineering translation of radiation shielding parameters. Third, current ground-based accelerated radiation tests mostly use a fixed dose rate loading mode and a binary "total dose-material attenuation" evaluation system. There has been no coupled analysis of sensitive electrical parameters of integrated circuits with shielding performance indicators, and no quantitative mapping relationship between material radiation shielding capability and integrated circuit functional degradation has been established. This results in a lack of a closed-loop feedback mechanism between the optimization direction of shielding parameters and the circuit failure threshold, making it difficult for radiation shielding performance parameters to effectively guide the optimization and upgrading of integrated circuit radiation hardening designs.

[0004] Therefore, the radiation shielding performance of the material is evaluated by changing the intrinsic radiation sensitivity parameters of the packaged reinforced integrated circuit, and then the total dose radiation resistance of the integrated circuit is derived. Compared with relying solely on material testing, this method is closer to space application scenarios, can achieve dual equivalence of damage mechanism and environmental effect, and increase the credibility of package reinforcement design optimization. Summary of the Invention

[0005] The present invention proposes a test method for the total dose shielding rate of single-energy electrons of packaged reinforced integrated circuits based on the change of electrical parameters. The total dose irradiation test is performed on the unreinforced integrated circuit to obtain the failure threshold T0, and the static leakage current change rate K is plotted. iihph The Weibull fitting curve of the dose is obtained from the deposition dose D1 in the sensitive area of ​​the packaged reinforced circuit, and then the monoenergetic electron total dose shielding rate E and the total dose radiation resistance T1 of the packaged reinforced circuit are calculated by the formula. This solves the problems in the existing technology of directly testing the failure threshold of the packaged reinforced circuit, which is time-consuming and costly; the material shielding test overly focuses on the original properties while ignoring the equivalence of the actual space environment, and the inability to accurately obtain the deposition dose leads to systematic deviations in engineering conversion; and the quantitative mapping relationship between material shielding and circuit function degradation is not established.

[0006] A method for testing the total single-energy electron dose shielding efficiency of a packaged and reinforced integrated circuit based on electrical parameter changes, the method comprising the following steps: S1. Place the unhardened integrated circuit under total dose irradiation, accumulate different doses at a fixed dose rate, and obtain the total dose value corresponding to the failure of the circuit electrical parameters. T 0; S2. After the total dose irradiation of the unhardened integrated circuit, different cumulative doses and their corresponding electrical parameters are obtained, and a scatter plot is drawn and fitted to obtain a fitting curve; S3. Irradiate the packaged reinforced integrated circuit with a total dose of monoenergetic electrons to obtain a total irradiation dose. D 0, and the deposition dose of the sensitive area of ​​the package reinforced integrated circuit is obtained according to the fitting curve obtained by S2. D 1; S4: Deposition dose of the sensitive area of ​​the circuit obtained in S3 D 1 and total radiation dose D 0 to obtain the total monoenergetic electron dose shielding rate of the material E , and then the total dose value corresponding to the failure of the electrical parameters of the unreinforced integrated circuit T 0Derivation of the total radiation dose value of packaged hardened integrated circuits T 1.

[0007] Furthermore, in S1, the unreinforced integrated circuit includes Flash and MOSFET.

[0008] Furthermore, in S1, the total dose irradiation is gamma ray or high energy electron irradiation.

[0009] Furthermore, in S2, the selected electrical parameter is the static leakage current iihph, and the relative value change is used to compare the degree of change of the electrical parameters of the different packaged reinforced integrated circuits after irradiation. The iihph change rate of each integrated circuit before and after irradiation is normalized to define the change coefficient K iihph ,draw K iihph Scatter plot with cumulative dose; (1).

[0010] Furthermore, in S2, the fitting method adopts Weibull distribution fitting.

[0011] Furthermore, in S3, the shielding material used for the packaged reinforced integrated circuit includes a metal-based material, a ceramic-based material or a polymer-based material.

[0012] Furthermore, in S3, the shielding material used for the packaged reinforced integrated circuit is a Bi2O3 / EP polymer-based composite coating with a coating thickness of 3 mm.

[0013] Furthermore, in S4, the total dose shielding rate E of the single-energy electron of the packaged reinforced integrated circuit and its total dose radiation resistance value are T 1 The formula used for derivation is: (2) (3) A storage medium stores a computer program, which, when executed by a processor, implements the above-mentioned method for testing the total monoenergetic electron dose shielding rate of a packaged reinforced integrated circuit based on electrical parameter changes.

[0014] A computer device comprises: a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the program to implement the above-mentioned method for testing the total single-energy electron dose shielding rate of a packaged reinforced integrated circuit based on electrical parameter changes.

[0015] Beneficial effects of the present invention: The purpose of the present invention's method for testing the total dose shielding rate of monoenergetic electrons of packaged reinforced integrated circuits based on changes in electrical parameters is to evaluate the radiation shielding performance of materials through changes in the intrinsic radiation sensitive parameters of packaged reinforced integrated circuits, and then deduce the total dose radiation resistance of packaged reinforced integrated circuits. The improvement lies in accurately obtaining the deposition dose caused by radiation in sensitive areas of integrated circuits, coupling analysis of sensitive electrical parameters of integrated circuits with shielding performance indicators, and establishing a quantitative mapping relationship between the radiation shielding capability of materials and sensitive electrical parameters of integrated circuits. Compared with relying solely on material testing for radiation shielding performance, this method is closer to space application scenarios, can achieve dual equivalence of damage mechanism and environmental effect, and increases the credibility of package reinforcement design optimization. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 A flow chart of a method for testing the total single-energy electron dose shielding rate of a packaged ruggedized integrated circuit based on changes in electrical parameters according to the test method of the present invention; Figure 2 for K iihph Relationship with cumulative dose and fitting curve. DETAILED DESCRIPTION

[0017] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0018] Reference Figure 1 As shown, a method for testing the total single-energy electron dose shielding efficiency of a packaged and reinforced integrated circuit based on changes in electrical parameters is provided. The method for testing the total single-energy electron dose shielding efficiency of a packaged and reinforced integrated circuit comprises the following steps: S1. Place the unhardened integrated circuit under total dose irradiation, accumulate different doses at a fixed dose rate, and obtain the total dose value corresponding to the failure of the circuit electrical parameters. T 0; S2. After the total dose irradiation of the unhardened integrated circuit, different cumulative doses and their corresponding electrical parameters are obtained, and a scatter plot is drawn and fitted to obtain a fitting curve; S3. Irradiate the packaged reinforced integrated circuit with a total dose of monoenergetic electrons to obtain a total irradiation dose. D 0, and the deposition dose of the sensitive area of ​​the package reinforced integrated circuit is obtained according to the fitting curve obtained by S2. D 1; S4: Deposition dose of the sensitive area of ​​the circuit obtained in S3 D 1 and total radiation dose D 0 to obtain the total dose shielding rate of monoenergetic electrons of packaged reinforced integrated circuits E , and then the total dose value corresponding to the failure of the electrical parameters of the unreinforced integrated circuit T 0Derivation of the total radiation dose value of packaged hardened integrated circuits T 1.

[0019] Specifically, the present invention is based on the test method of the total dose shielding rate of the packaged reinforced integrated circuit of the electrical parameter change, and obtains the failure threshold by irradiating the unreinforced integrated circuit with a total dose. T 0, and based on the static leakage current change rate K iihph Derivation of the deposition dose in the sensitive area of ​​the package reinforcement circuit by Weibull fitting curve with the dose D 1. Combined total irradiation dose D 0Calculation of total dose shielding efficiency of single-energy electrons for packaged ruggedized integrated circuits E and its total radiation dose value T 1. This method effectively addresses the time-consuming and costly problem of directly testing circuit failure thresholds in existing technologies. It avoids the drawback of material shielding testing, which overemphasizes intrinsic properties while ignoring equivalence to actual space environments. It overcomes the limitation of traditional methods, which cannot accurately obtain the deposited dose, leading to systematic deviations in engineering translation. By establishing a quantitative mapping relationship between the material's radiation shielding capability and the sensitive electrical parameters of the integrated circuit, it forms a closed-loop feedback mechanism for shielding parameter optimization and circuit failure threshold. This method reduces errors caused by absolute value differences in measurements between different circuits by normalizing the rate of change of the static leakage current (iihph). It accurately obtains the deposited dose in sensitive areas of the integrated circuit using a Weibull fitting curve, and establishes a relationship between the intrinsic material properties and changes in electrical parameters. This makes the material shielding performance evaluation more relevant to actual application scenarios, achieving dual equivalence of damage mechanism and environmental effects, significantly improving the credibility of package reinforcement design optimization, and significantly reducing testing time and cost by indirectly inferring the total radiation dose resistance capability.

[0020] Furthermore, in S1, the unreinforced integrated circuit includes Flash and MOSFET.

[0021] Specifically, the present invention defines that unreinforced integrated circuits include Flash and MOSFET. This definition enables the test method to accurately evaluate typical storage devices and semiconductor devices that are susceptible to radiation in the aerospace field, effectively solving the problem of insufficient pertinence caused by the generalization of test objects in the prior art. Since storage devices such as Flash are prone to problems such as threshold voltage drift and storage cell failure under total dose radiation, and the leakage current change of MOSFET directly affects the stability of circuit functions, by explicitly including these devices in the test scope, the test results can be made more in line with the actual application needs of aerospace devices, ensuring the pertinence and accuracy of the evaluation of the packaging reinforcement effect. This definition further enhances the engineering practicality of the test method, so that the total dose radiation resistance value derived based on this method can more accurately guide the packaging reinforcement design of the above-mentioned types of devices, effectively improving the reliability and service life of aerospace integrated circuits in space radiation environments, while avoiding the deviation in shielding performance evaluation caused by unclear test objects.

[0022] Furthermore, in S1, the total dose irradiation is gamma ray or high energy electron irradiation.

[0023] Specifically, the total dose irradiation is gamma ray or high-energy electron irradiation. Since gamma ray has stable physical properties in ground irradiation tests, the cumulative dose can be accurately controlled by a fixed dose rate to ensure that the failure threshold of the unreinforced integrated circuit is within the range of 0.05. T The test results of the 0 and electrical parameter-cumulative dose curves are repeatable and reliable, laying an accurate data foundation for the subsequent derivation of deposited dose and shielding efficiency calculation of packaged and ruggedized circuits. The high-energy electron irradiation matches actual space application scenarios, further enhancing the engineering applicability of the test method. It can more realistically reflect the actual protection effect of packaged and ruggedized integrated circuits in the space radiation environment and avoid evaluation bias caused by differences in radiation sources.

[0024] Furthermore, in S2, the selected electrical parameter is the static leakage current iihph. Since the absolute values ​​measured between different circuits are different, the relative value change is used to compare the degree of change in the electrical parameters of different packaged reinforced integrated circuits after irradiation. The iihph change rate of each integrated circuit before and after irradiation is normalized to define the change coefficient K iihph ,draw K iihph Scatter plot with cumulative dose; (1).

[0025] Specifically, the electrical parameter selected by the present invention is the static leakage current iihph and is normalized by relative value change. By taking iihph as the intrinsic radiation sensitive parameter, its high response characteristic to the total dose radiation is used to accurately reflect the degree of circuit damage. At the same time, by defining the variation coefficient K iihph Eliminating the errors caused by the difference in absolute values ​​of measurements between different circuits effectively solves the evaluation distortion problem caused by unreasonable parameter selection and absolute value comparison deviation in the existing technology. Since the change of static leakage current iihph under total dose radiation is directly related to the functional stability of the integrated circuit, using the relative value change rate for comparison can enable circuits of different processes and specifications to evaluate the degree of radiation damage under a unified standard, ensuring that the failure threshold of unreinforced circuits is within the specified range. T The test data of 0 is comparable across devices, laying the foundation for the accuracy of the subsequent Weibull fitting curve. This limitation further enhances the scientific nature of the test method. By normalizing the physical quantity into a relative rate of change, the fitting curve can more accurately reflect the quantitative relationship between dose and parameter changes, thereby achieving the goal of accurate measurement in the packaging reinforcement circuit test. K iihph Reverse deposition dose D 1 has higher precision, and finally achieves the total dose shielding rate of single-energy electrons of packaged reinforced integrated circuits E and its total radiation dose value T The improved reliability of the derivation provides more valuable quantitative data for package reinforcement design, significantly reducing the engineering optimization cost and time consumption caused by parameter evaluation deviation.

[0026] Furthermore, in S2, since the static leakage current changes with the dose in a logarithmic manner, the fitting method adopts Weibull distribution fitting.

[0027] Specifically, since the Weibull distribution can accurately describe the parameter degradation law of integrated circuits under total dose radiation, the static leakage current change rate is K iihph Fitting with the scatter plot of cumulative dose can establish a more accurate quantitative mapping relationship, so that the fitting curve can accurately reflect the nonlinear relationship between radiation dose and circuit damage degree, thus achieving the goal of accurate quantitative mapping in package reinforcement circuit testing. K iihph Reverse calculation of deposition dose in sensitive areas D This limitation further enhances the scientific nature of the test method, accurately capturing the cumulative effect of radiation damage through the shape and scale parameters of the Weibull distribution, avoiding the deposition dose derivation error caused by traditional linear fitting or other distribution models, and ensuring the total single-energy electron dose shielding rate of the packaged reinforced integrated circuit. E and its total radiation dose value TThe calculation results of 1 are closer to the actual radiation resistance of the circuit, providing a more accurate quantitative basis for package reinforcement design, significantly improving the consistency between radiation shielding performance evaluation and engineering transformation, and reducing the optimization cost of radiation reinforcement solutions caused by fitting errors.

[0028] Furthermore, in S3, the shielding material used for the packaged reinforced integrated circuit includes a metal-based material, a ceramic-based material, or a polymer-based material; Specifically, explicitly including these materials in the test scope can make the shielding efficiency derived based on this method E and total radiation dose value T 1. It can accurately reflect the actual protective effects of different material systems, ensuring the universal applicability of the test method to multiple packaging reinforcement solutions. This limitation further enhances the engineering practicality of the test method. By compatibility with shielding material evaluations of different materials, it provides a more comprehensive technical reference for aerospace device packaging reinforcement design. This allows designers to optimize material selection and structural design based on material shielding performance test data, while avoiding evaluation bias caused by incomplete material type coverage. This effectively improves the adaptability and reliability of packaged and reinforced integrated circuits in complex space radiation environments, providing a more inclusive technical solution for radiation hardening of aerospace electronic equipment.

[0029] In S3, the shielding material used for the packaged reinforced integrated circuit is a Bi2O3 / EP polymer-based composite coating with a coating thickness of 3 mm.

[0030] Specifically, this invention specifies the shielding material and its physical thickness, enabling a test method to accurately quantify the relationship between the material's shielding performance and the circuit's radiation resistance. This effectively addresses the existing problem of fuzzy shielding material parameters leading to distorted evaluation results. A 3 mm thickness has been demonstrated in practical examples to achieve a shielding efficiency of 46.3% for packaged and reinforced circuits under 5 MeV electron irradiation, and a total radiation dose resistance of 55.8 krad (Si).

[0031] Furthermore, in S4, the total dose shielding rate E of the single-energy electron of the packaged reinforced integrated circuit and its total dose radiation resistance value are T 1 The formula used for derivation is: (2) (3).

[0032] Specifically, the present invention effectively solves the problem of the lack of quantitative correlation between material shielding performance and circuit function degradation in the prior art by establishing a mathematical mapping relationship between material shielding rate and circuit radiation resistance. D 0. Deposition dose D 1 and the failure threshold of the unreinforced circuit T1. Carry out coupling calculation to accurately quantify the attenuation effect of packaging materials on radiation and the improvement of circuit anti-radiation ability, so that the shielding rate E This limitation further enhances the scientific nature and engineering practicality of the test method, forms a closed-loop feedback mechanism of "shielding parameter-circuit failure threshold" through mathematical formulas, avoids the design optimization deviation caused by qualitative evaluation in traditional methods, and makes the design based on this formula more scientific and practical. T 1. It can accurately reflect the actual radiation resistance of the packaged reinforced circuit under the irradiation of the total dose of monoenergetic electrons, while greatly shortening the test cycle and reducing the evaluation cost.

[0033] A storage medium stores a computer program, which, when executed by a processor, implements the above-mentioned method for testing the total monoenergetic electron dose shielding rate of a packaged reinforced integrated circuit based on electrical parameter changes.

[0034] Specifically, the computer program stored on the storage medium can implement the above-mentioned test method when executed by the processor. This limitation enables the test method to be conveniently stored, transmitted and called in the form of a software program, effectively solving the problems of low efficiency and poor consistency caused by the reliance on manual operation in the test process in the prior art. Because the computer program can accurately reproduce each step of the test method, including the failure threshold of the unreinforced integrated circuit T 0 acquisition, static leakage current change rate K iihph Calculation of the total dose of single-energy electrons, generation of the Weibull distribution fitting curve, and shielding rate of the package reinforced circuit E and total radiation dose value T 1, thus ensuring the repeatability and accuracy of the test results and avoiding errors that may be introduced by manual operation. This limitation further enhances the engineering applicability of the test method. Through the portability of the storage medium, this test method can be flexibly applied to different test equipment and scenarios. At the same time, it is easy to integrate with the simulation system or management platform of other aerospace electronic equipment. It provides technical support for the automated and intelligent evaluation of the radiation resistance of integrated circuits in the aerospace field, significantly improves test efficiency, reduces dependence on professional operators, and effectively reduces test deviations and costs caused by human factors.

[0035] A computer device comprises: a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the program to implement the above-mentioned method for testing the total single-energy electron dose shielding rate of a packaged reinforced integrated circuit based on electrical parameter changes.

[0036] Specifically, a computer device of the present invention includes a memory, a processor, and a computer program stored in the memory and capable of running on the processor. When the program is executed, the above-mentioned test method is implemented. This limitation provides a physical carrier capable of real-time operation and efficient processing for the test of the total dose shielding rate of single-energy electrons of packaged reinforced integrated circuits through the combination of hardware and software. Since the processor of the computer device can quickly execute the static leakage current change rate K iihph Normalization calculation, parameter optimization of Weibull distribution fitting curve and shielding rate E and radiation resistance value T 1 formula derivation and other complex operations can complete the processing and analysis of multiple sets of test data in a short period of time, greatly improving the computational efficiency compared to traditional manual testing, while avoiding the logical errors and numerical deviations that may occur in manual calculations. This limitation further enhances the engineering practicality of the test method. The computer device's memory can store a large amount of historical test data, facilitating the optimization of fitting curve accuracy through machine learning algorithms. The processor's parallel computing capabilities support the simultaneous evaluation of multiple sets of packaged and reinforced circuits, making the test process automated and intelligent. This not only meets the aerospace industry's demand for rapid evaluation of the radiation resistance of integrated circuits, but also allows real-time connection with irradiation test equipment through a network interface, achieving a closed-loop "irradiation-test-analysis" operation, significantly reducing the operation and maintenance costs of the test system, and providing efficient and reliable hardware support for the evaluation of the total monoenergetic electron dose shielding rate and radiation resistance of packaged and reinforced integrated circuits.

[0037] The technical solution of the present invention is further described below by way of specific embodiments. It should be understood by those skilled in the art that the embodiments are merely for the purpose of helping to understand the present invention and should not be regarded as specific limitations of the present invention.

[0038] Example 1: (1) Total dose radiation resistance test of unreinforced integrated circuits According to the integrated circuit total dose test industry standard QJ10004A-2018, the unreinforced FLASH circuit 60 The Co source uses gamma rays to conduct a total dose test, and the circuit's total dose resistance capability is 30 krad (Si).

[0039] (2) Relationship curve between electrical parameter changes and total dose and fitting The 5 MeV electron test was carried out on the selected FLASH circuit, and the electron injection rate was set to 9×10 8 e / cm 2 / s. Five unreinforced circuits were selected and irradiated with different electron beams to obtain the change values ​​of the circuit static leakage current iihph under different doses. The normalized value was obtained using formula 1. Kiihph The values ​​are shown in Table 1. K iihph The scatter plot of the cumulative dose was obtained by fitting the Weibull distribution to obtain the dose distribution of 0 krad (Si) ~ 40 krad (Si). K iihph The change curve of Figure 2 shown.

[0040]

[0041] Table 1 Cumulative dose and K iihph Value test results (3) Electrical parameter testing and deposition dose acquisition of packaged reinforced integrated circuits The selected FLASH circuit was packaged and reinforced using Bi2O3 / EP polymer-based composite coating. The packaged and reinforced FLASH circuit was subjected to a 5 MeV electron irradiation test. The electron irradiation dose was D 0 is 30 krad (Si), measured K iihph The value is 3.20×10 -2 ,pass Figure 2 The fitting curve in the figure can be used to obtain the deposition dose in the sensitive area of ​​the package reinforced FLASH circuit. D 1 is 16.1krad (Si).

[0042] (4) Derivation of the total dose shielding rate of monoenergetic electrons and its total dose radiation resistance capability of packaged reinforced integrated circuits According to step three D 1. D 0 and formula 2 can be used to obtain the 5 MeV monoenergetic electron total dose shielding rate of Bi2O3 / EP polymer-based composite coating encapsulated reinforced FLASH E It is 46.3%. According to Formula 3, the total radiation dose value of the package reinforced FLASH circuit can be derived. T 1 is 55.8 krad (Si).

[0043] The present invention's method for testing the total monoenergetic electron dose shielding rate of a packaged reinforced integrated circuit based on changes in electrical parameters aims to evaluate the total monoenergetic electron dose shielding rate of the packaged reinforced integrated circuit by changes in its intrinsic radiation-sensitive parameters, and then derive the total dose radiation resistance of the packaged reinforced integrated circuit. The improvement lies in accurately obtaining the deposition dose caused by radiation in the sensitive area of ​​the integrated circuit, coupling analysis of the sensitive electrical parameters of the integrated circuit with the shielding performance index, and establishing a quantitative mapping relationship between the radiation shielding capability of the material and the sensitive electrical parameters of the integrated circuit. Compared with relying solely on material testing for radiation shielding performance, this method is closer to space application scenarios, can achieve dual equivalence of damage mechanism and environmental effect, and increases the credibility of package reinforcement design optimization.

[0044] While the specific embodiments of the present invention have been described in detail above, these are intended to be exemplary only, and the present invention is not limited thereto. Any equivalent modifications or substitutions to the present invention that would be apparent to those skilled in the art are also within the scope of the present invention. Therefore, any equivalent modifications or substitutions made without departing from the spirit and scope of the present invention are intended to be encompassed within the scope of the present invention.

Claims

1. A method for testing the total dose shielding efficiency of monoenergetic electrons of a packaged and reinforced integrated circuit based on changes in electrical parameters, characterized in that: The method for testing the total monoenergetic electron dose shielding rate of the packaged ruggedized integrated circuit comprises the following steps: S1. Place the unhardened integrated circuit under total dose irradiation, accumulate different doses at a fixed dose rate, and obtain the total dose value corresponding to the failure of the circuit electrical parameters. T 0; S2. After the total dose irradiation of the unhardened integrated circuit, different cumulative doses and their corresponding electrical parameters are obtained, and a scatter plot is drawn and fitted to obtain a fitting curve; S3. Irradiate the packaged reinforced integrated circuit with a total dose of monoenergetic electrons to obtain a total irradiation dose. D 0, and the deposition dose of the sensitive area of ​​the package reinforced integrated circuit is obtained according to the fitting curve obtained by S2. D 1; S4: Deposition dose of the sensitive area of ​​the circuit obtained in S3 D 1 and total radiation dose D 0 to obtain the total dose shielding rate of monoenergetic electrons of packaged reinforced integrated circuits E , and then the total dose value corresponding to the failure of the electrical parameters of the unreinforced integrated circuit T 0Derivation of the total radiation dose value of packaged hardened integrated circuits T 1.

2. The method for testing the total single-energy electron dose shielding rate of packaged and reinforced integrated circuits based on electrical parameter changes according to claim 1, characterized in that: In S1, the unreinforced integrated circuit includes Flash and MOSFET.

3. The method for testing the total single-energy electron dose shielding rate of packaged and reinforced integrated circuits based on electrical parameter changes according to claim 1, characterized in that: In S1, the total dose irradiation is gamma ray or high energy electron irradiation.

4. The method for testing the total single-energy electron dose shielding rate of packaged and reinforced integrated circuits based on electrical parameter changes according to claim 1, characterized in that: In S2, the selected electrical parameter is the static leakage current iihph. The relative value change is used to compare the degree of change of the electrical parameters of different packaged reinforced integrated circuits after irradiation. The iihph change rate of each integrated circuit before and after irradiation is normalized to define the change coefficient K iihph ,draw K iihph Scatter plot with cumulative dose; （1）。 5. The method for testing the total single-energy electron dose shielding rate of packaged and reinforced integrated circuits based on electrical parameter changes according to claim 1, characterized in that: In S2, the fitting method adopts Weibull distribution fitting.

6. The method for testing the total single-energy electron dose shielding rate of packaged and reinforced integrated circuits based on electrical parameter changes according to claim 1, characterized in that: In S3, the shielding material used for packaging and reinforcing the integrated circuit includes a metal-based material, a ceramic-based material, or a polymer-based material.

7. The method for testing the total single-energy electron dose shielding rate of packaged and reinforced integrated circuits based on electrical parameter changes according to claim 6, characterized in that: In S3, the shielding material used for the packaged reinforced integrated circuit is a Bi2O3 / EP polymer-based composite coating with a coating thickness of 3 mm.

8. The method for testing the total single-energy electron dose shielding rate of packaged and reinforced integrated circuits based on electrical parameter changes according to claim 1, characterized in that: In S4, the total dose shielding rate of single-energy electrons of packaged reinforced integrated circuits E and its total radiation dose value T 1 The formula used for derivation is: （2） （3）。 9. A storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the method for testing the total monoenergetic electron dose shielding rate of a packaged ruggedized integrated circuit based on electrical parameter changes according to any one of claims 1 to 8 is implemented.

10. A computer device, characterized in that: include: A memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the program to implement the method for testing the total single-energy electron dose shielding rate of a packaged reinforced integrated circuit based on electrical parameter changes as described in any one of claims 1 to 8.

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