Crystalline silicon / perovskite laminated cell, preparation method thereof and photovoltaic module

Abstract

The invention relates to the technical field of solar cells, and mainly provides a crystalline silicon / perovskite laminated cell, a preparation method thereof and a photovoltaic module. The preparation method of the crystalline silicon / perovskite laminated cell comprises the following steps: forming a transparent metal oxide layer on a perovskite top cell substrate; processing the first region of the transparent metal oxide layer by adopting a hydrogen plasma process to form a metal layer; and preparing a metal electrode on the metal layer. According to the technical scheme of the invention, the crystalline silicon / perovskite laminated cell has low contact resistance.

Description

Technical Field

[0001] The present application relates to the technical field of solar cells, and in particular to a crystalline silicon / perovskite stacked cell and a preparation method thereof, and a photovoltaic module. Background Art

[0002] Perovskite / crystalline silicon tandem solar cells currently boast an efficiency of 34.6%, far exceeding the 27.09% of the mainstream crystalline silicon single-junction cells. However, due to the high sintering temperature of conventional high-temperature silver pastes, which can significantly damage the thin-film structure, perovskite cells have stringent sintering temperature requirements, requiring the use of low-temperature pastes with a curing temperature of 250°C or less (especially ultra-low-temperature pastes with a curing temperature of 150°C or less) to form electrodes. However, the use of low-temperature pastes to form electrodes in the metallization preparation of perovskite / crystalline silicon tandem cells results in high contact resistance between the electrodes and the transparent electrode due to the low curing temperature, and is prone to detachment. This limits the application of low-temperature pastes, especially ultra-low-temperature pastes, in perovskite / crystalline silicon tandem solar cells. Consequently, the current metallization development of perovskite / crystalline silicon two-terminal tandem cells has been slow.

[0003] Therefore, there is an urgent need to develop a technology that can reduce the contact resistance in perovskite / crystalline silicon tandem solar cells.

[0004] It should be noted that the above content is not necessarily prior art, nor is it intended to limit the scope of patent protection of this application. Summary of the Invention

[0005] The present invention provides a crystalline silicon / perovskite tandem cell and its preparation method, as well as a photovoltaic module, to solve or alleviate the above-mentioned technical problems. The crystalline silicon / perovskite tandem cell of the present invention has low contact resistance and the electrodes are not easy to fall off.

[0006] In a first aspect, an embodiment of the present application provides a method for preparing a crystalline silicon / perovskite tandem cell, comprising: forming a transparent metal oxide layer on the perovskite top cell substrate; treating the first region of the transparent metal oxide layer with a hydrogen plasma process to form a metal layer; A metal electrode is prepared on the metal layer.

[0007] Optionally, the first region of the transparent metal oxide layer is treated with a hydrogen plasma process, comprising: The first region of the transparent metal oxide layer is exposed to hydrogen plasma for 20 minutes to 40 minutes.

[0008] Optionally, the hydrogen plasma process has at least one of the following conditions: The temperature is 80℃-120℃; Pressure is 80mTorr-120mTorr; The radio frequency power is 0.1W / cm 2 -0.3W / cm 2 ; The hydrogen flow rate is 5ml / min-15ml / min.

[0009] In a second aspect, an embodiment of the present application provides a crystalline silicon / perovskite tandem cell, comprising: Perovskite top cell substrate; A transparent metal oxide layer and a metal electrode are located on the perovskite top cell substrate and are stacked in sequence; A metal layer is disposed in the transparent metal oxide layer.

[0010] Optionally, the metal layer includes metal oxide and metal formed by reducing the metal oxide.

[0011] Optionally, the metallization degree of the metal layer gradually increases along the first direction.

[0012] Optionally, the interface of the metal layer in contact with the metal electrode is composed of a single metal.

[0013] Optionally, the transparent metal oxide layer includes one or more of tin-doped indium oxide, zinc-doped indium oxide, tungsten-doped indium oxide, molybdenum-doped indium oxide, fluorine-doped tin oxide, cerium-doped indium oxide, aluminum-doped zinc oxide, antimony-doped tin oxide, and boron-doped zinc oxide.

[0014] Optionally, the width of the metal layer is greater than or equal to the width of the metal electrode.

[0015] Optionally, the metal layer has a thickness of 10 nm-100 nm.

[0016] In a third aspect, an embodiment of the present application provides a photovoltaic module, comprising: a crystalline silicon / perovskite tandem cell prepared by the preparation method of a crystalline silicon / perovskite tandem cell provided by any of the above embodiments, or a crystalline silicon / perovskite tandem cell provided by any of the above embodiments.

[0017] The above technical solution adopted in the embodiments of the present application may have the following advantages: In the preparation method of the crystalline silicon / perovskite stacked cell, a hydrogen plasma process is used to treat the first region (i.e., the metal region) of the transparent metal oxide layer, so that the metal oxide in the first region is reduced to metal to form a metal layer; a metal electrode is formed on the metal layer so that the metal electrode is in direct contact with the metal layer, thereby effectively reducing the contact resistance between the metal electrode formed by an ultra-low temperature slurry (a conductive slurry with a curing temperature of less than or equal to 150°C) and the transparent conductive oxide layer (i.e., the transparent metal oxide layer). BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the multiple drawings represent the same or similar components or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings only depict some embodiments disclosed in this application and should not be construed as limiting the scope of this application.

[0019] Figure 1 1 is a schematic flow chart of a method for preparing a crystalline silicon / perovskite tandem cell provided in an embodiment of the present application; Figure 2 It is a schematic structural diagram of the crystalline silicon / perovskite tandem cell provided in an embodiment of the present application.

[0020] Description of reference numerals: 10. Crystalline silicon bottom cell; 21. Perovskite top cell substrate; 22. Transparent metal oxide layer; 23. Metal layer; 24. Metal electrode; D1, first direction. DETAILED DESCRIPTION

[0021] The embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings. In the accompanying drawings, the sizes of layers, regions, and elements and their relative sizes may be exaggerated for clarity. The same or similar reference numerals throughout represent the same or similar elements or elements with the same or similar functions. The embodiments described below are exemplary and are only used to explain the present application and are not to be construed as limiting the present application. It should be noted that the embodiments in the present application and the features in the embodiments may be combined with each other unless there is a conflict.

[0022] like Figure 1 As shown, the embodiment of the present application provides a method for preparing a crystalline silicon / perovskite tandem cell, comprising: S100: forming a transparent metal oxide layer on the perovskite top cell substrate; S200: treating the first region of the transparent metal oxide layer using a hydrogen plasma process to form a metal layer; S300: preparing a metal electrode on the metal layer.

[0023] In an embodiment of the present application, a crystalline silicon / perovskite stacked cell includes a crystalline silicon bottom cell and a perovskite top cell, the perovskite top cell includes a perovskite top cell substrate, and the perovskite top cell substrate has a hole transport layer, a perovskite light absorption layer and an electron transport layer stacked in sequence.

[0024] In the preparation method of the crystalline silicon / perovskite stacked cell, a transparent metal oxide layer is first formed on the perovskite top cell substrate, and then a hydrogen plasma process is used to treat the first region (i.e., the metal region) of the transparent metal oxide layer so that the metal oxide in the first region is reduced to metal to form a metal layer; a metal electrode is formed on the metal layer so that the metal electrode is in direct contact with the metal layer, thereby effectively reducing the contact resistance between the metal electrode formed by an ultra-low temperature slurry (a conductive slurry with a curing temperature of less than or equal to 150°C) and the transparent conductive oxide layer (i.e., the transparent metal oxide layer).

[0025] In some embodiments, in step S300, a conductive paste can be printed on the metal layer and cured to form a metal electrode; the curing temperature of the conductive paste is 150°C or less (e.g., 110°C, 120°C, 130°C, 135°C, 140°C, 145°C, or 150°C). For example, a silver paste with a curing temperature of 120°C can be used to print the conductive paste on the metal layer, followed by curing at 120°C for 30 minutes to form the metal electrode. This metal electrode is in direct contact with the metal layer, resulting in low contact resistance. Furthermore, the presence of the metal layer enhances adhesion between the metal electrode and the transparent metal oxide layer, reducing metal electrode shedding.

[0026] In some embodiments, step S200, treating the first region of the transparent metal oxide layer using a hydrogen plasma process, includes: S220: exposing the first region of the transparent metal oxide layer to hydrogen plasma for 20 minutes to 40 minutes.

[0027] Hydrogen plasma processing is a highly effective surface treatment technology. By controlling the parameters of the hydrogen plasma, the metal oxide in the transparent metal oxide layer can be reduced to metal, forming a metal layer with excellent conductivity. The reduction treatment time is 20-40 minutes (e.g., 20 minutes, 25 minutes, 30 minutes, 35 minutes, 40 minutes), which can reduce the metal oxide in the transparent metal oxide layer to metal, forming a structurally ordered and controllable metal layer. If the treatment time is too short, the interaction between the hydrogen plasma and the transparent metal oxide layer surface is insufficient, resulting in a less pronounced treatment effect. If the treatment time is too long, the transparent metal oxide layer may overreact, resulting in surface defects or performance degradation. For example, exposing the first region of a transparent metal oxide layer (ITO) to hydrogen plasma for 30 minutes reduces the ITO in this region to metallic indium, forming a metal layer. This metal layer effectively reduces the contact resistance between the subsequent electrode and the transparent metal oxide layer.

[0028] In an optional embodiment, prior to step S220, treating the first region of the transparent metal oxide layer with a hydrogen plasma process further includes step S210, placing the perovskite top cell substrate having the transparent metal oxide layer in a hydrogen plasma treatment device. In some embodiments, in step S210, the hydrogen plasma process has at least one of the following conditions: The temperature inside the hydrogen plasma treatment equipment is 80°C-120°C; The pressure inside the hydrogen plasma treatment equipment is 80mTorr-120mTorr; The radio frequency power of the power supply of the hydrogen plasma treatment equipment is 0.1W / cm 2 -0.3W / cm 2 ; The hydrogen flow rate is 5ml / min-15ml / min.

[0029] Too high or too low a temperature may affect the treatment effect. When the temperature inside the hydrogen plasma treatment equipment is 80℃-120℃ (for example, 80℃, 90℃, 100℃, 110℃, 120℃), the hydrogen plasma can undergo an effective physical and chemical reaction with the transparent metal oxide layer while avoiding unnecessary thermal damage to the sample.

[0030] When the pressure in the hydrogen plasma treatment equipment is controlled to be 80mTorr-120mTorr (for example, 80mTorr, 90mTorr, 100mTorr, 110mTorr, 120mTorr), hydrogen molecules can be effectively ionized to form plasma, while ensuring that the interaction between the plasma and the surface of the transparent metal oxide layer is sufficient. If the pressure is too high, the plasma density may increase but the energy distribution may be uneven, affecting the treatment uniformity; if the pressure is too low, plasma generation will be difficult and the ideal treatment effect cannot be achieved.

[0031] When the radio frequency power of the power supply of the hydrogen plasma treatment equipment is 0.1W / cm 2 -0.3W / cm 2 (For example, 0.1W / cm 2 , 0.15W / cm 2 , 0.2W / cm 2 , 0.25W / cm 2 , 0.3W / cm 2 ), which is used to excite hydrogen to generate plasma, which can fully ionize the hydrogen molecules to form hydrogen plasma with appropriate energy and activity, and then produce effective chemical reactions with the surface of the transparent metal oxide layer. If the power is too high, the plasma energy may be too high, causing excessive damage to the surface of the transparent metal oxide layer; if the power is too low, it will not be able to generate sufficiently active plasma, and the reduction effect will be poor.

[0032] A stable hydrogen flow rate can ensure the continuous and stable generation of plasma. Controlling the hydrogen flow rate to 5ml / min-15ml / min (for example, 5ml / min, 8ml / min, 10ml / min, 12ml / min, 15ml / min) can generate an appropriate amount of stable hydrogen plasma, thereby maintaining sufficient contact and reaction between the hydrogen plasma and the surface of the transparent metal oxide layer.

[0033] In an optional embodiment, in step S220, a patterned mask may be provided on the transparent metal oxide layer to expose the first region, i.e., the first region of the transparent metal oxide layer is exposed to the hydrogen plasma. In other embodiments, no mask may be provided on the transparent metal oxide layer, and the entire transparent metal oxide layer may be exposed to the hydrogen plasma to reduce the metal oxide on the entire transparent metal oxide layer.

[0034] In an optional embodiment, in step S300, the conductive paste includes a low-temperature silver paste; wherein the curing temperature of the low-temperature silver paste is less than or equal to 150°C.

[0035] In an optional embodiment, before forming the transparent metal oxide layer on the perovskite top cell substrate, the method for preparing the crystalline silicon / perovskite tandem cell further includes: Providing an n-type crystalline silicon substrate (c-Si), wherein the n-type crystalline silicon substrate has a first surface and a second surface disposed opposite to each other and has a thickness of 200-400 μm; A first intrinsic hydrogenated amorphous silicon (ia-Si) layer is formed on a first surface of a crystalline silicon substrate by using a plasma enhanced chemical vapor deposition (PECVD) technique.

[0036] Using PECVD technology, a second intrinsic hydrogenated amorphous silicon (ia-Si) layer is formed on the second surface of the crystalline silicon substrate; Using PECVD technology, a p-type microcrystalline silicon (p-uc-Si) layer is prepared on the first intrinsic hydrogenated amorphous silicon (ia-Si) layer; Using PECVD technology, an n-type microcrystalline silicon (n-uc-Si) layer is formed on the second intrinsic hydrogenated amorphous silicon (ia-Si) layer; A first indium tin oxide (ITO) layer is deposited on a p-type microcrystalline silicon (p-uc-Si) layer using magnetron sputtering technology; A second indium tin oxide (ITO) layer is deposited on the n-type microcrystalline silicon (p-uc-Si) layer using magnetron sputtering technology; A nickel oxide (NiO) layer is formed on the second indium tin oxide (ITO) layer using magnetron sputtering technology; The perovskite light-absorbing layer was prepared on the nickel oxide (NiO) layer using a slit coating technique; Thermal evaporation technology was used to prepare a C60 layer as an electron transport layer on the perovskite light-absorbing layer; Atomic layer deposition (ALD) technology was used to prepare a tin dioxide (SnO2) layer on the C60 layer as an electron transport layer to form the perovskite top cell substrate.

[0037] In an optional embodiment, after forming the first indium tin oxide (ITO) layer, the method for preparing the crystalline silicon / perovskite stacked cell further includes: preparing a first electrode on the first indium tin oxide (ITO) layer using a screen printing technique.

[0038] In an optional embodiment, a transparent metal oxide layer is formed on the perovskite top cell substrate using magnetron sputtering technology. In an optional embodiment, the material of the transparent metal oxide layer includes one or more of tin-doped indium oxide (ITO), zinc-doped indium oxide (IZO), tungsten-doped indium oxide (IWO), molybdenum-doped indium oxide (IMO), cerium-doped indium oxide (ICO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), aluminum-doped zinc oxide (AZO), and boron-doped zinc oxide (BZO).

[0039] In an optional embodiment, the crystalline silicon bottom cell includes but is not limited to one of a PERC cell, a HJT cell, a TOPCon cell, and an IBC cell.

[0040] like Figure 2 As shown, the embodiment of the present application provides a crystalline silicon / perovskite tandem cell, comprising: Perovskite top cell substrate 21; A transparent metal oxide layer 22 and a metal electrode 24 are stacked on a perovskite top cell substrate 21; A metal layer 23 is provided in the transparent metal oxide layer.

[0041] In an alternative embodiment, the metal layer includes a metal oxide and a metal formed by reducing the metal oxide.

[0042] In an optional embodiment, the transparent metal oxide layer includes one or more of tin-doped indium oxide, zinc-doped indium oxide, tungsten-doped indium oxide, molybdenum-doped indium oxide, fluorine-doped tin oxide, cerium-doped indium oxide, aluminum-doped zinc oxide, antimony-doped tin oxide, and boron-doped zinc oxide.

[0043] In an embodiment of the present application, when the transparent metal oxide layer comprises one or more of tin-doped indium oxide (ITO), zinc-doped indium oxide (IZO), tungsten-doped indium oxide (IWO), molybdenum-doped indium oxide (IMO), or cerium-doped indium oxide (ICO), the metal layer comprises indium. When the transparent metal oxide layer comprises one or more of fluorine-doped tin oxide (FTO) or antimony-doped tin oxide (ATO), the metal layer comprises tin. When the transparent metal oxide layer comprises one or more of aluminum-doped zinc oxide (AZO) or boron-doped zinc oxide (BZO), the metal layer comprises zinc. The transparent metal oxide layer comprises a metal oxide, and the metal layer comprises the corresponding metal oxide and a metal formed by reduction of the metal oxide. For example, when the transparent metal oxide layer is tin-doped indium oxide (ITO), the metal layer comprises indium; when the metal oxide is fluorine-doped tin oxide (FTO), the metal layer comprises tin. This structural design can effectively reduce the contact resistance between the metal electrode and the transparent metal oxide layer and increase the adhesion between the metal electrode and the transparent metal oxide layer.

[0044] In an optional embodiment, the metallization degree of the metal layer gradually increases along the first direction D1 (ie, the direction from the perovskite top cell substrate to the transparent metal oxide layer).

[0045] In the embodiments of the present application, the metal layer comprises a metal oxide and a metal substance. The closer to the perovskite top cell substrate, the more metal oxide in the metal layer and the less metal content; the further away from the perovskite top cell substrate, the less metal oxide in the metal layer and the more metal content. That is, the metallization degree of the metal layer gradually increases from the perovskite top cell substrate toward the transparent metal oxide layer. This is because the farther away from the perovskite top cell substrate the transparent metal oxide layer is, the more it is exposed to the hydrogen plasma, the more metal is reduced, and thus the metallization degree increases.

[0046] In an optional embodiment, the interface of the metal layer in contact with the metal electrode is composed of a single metal.

[0047] The interface between the metal layer and the metal electrode contains only metal elements, not metal oxides. For example, when the metal layer contacts the metal electrode, the interface contains only metal elements such as indium or tin, and does not contain metal oxides such as ITO or FTO. This can further reduce the contact resistance between the metal layer and the metal electrode.

[0048] In an optional embodiment, the width of the metal layer is greater than or equal to the width of the metal electrode.

[0049] The width of the metal layer is greater than or equal to the width of the metal electrode, which can ensure a sufficiently large contact area between the metal electrode and the metal layer, helping to reduce contact resistance and thus improve the overall electrical performance of the battery.

[0050] In an optional embodiment, the thickness of the metal layer is 10 nm-100 nm. For example, the thickness of the metal layer can be 10 nm, 30 nm, 50 nm, 70 nm, or 100 nm. A metal layer with a suitable thickness is conducive to current transmission.

[0051] The following specific examples further illustrate the present invention, but should not be construed as limiting the present invention. Modifications or substitutions made to the methods, steps, or conditions of the present invention without departing from the spirit and substance of the present invention are within the scope of the present invention.

[0052] Example 1 like Figure 2 As shown, the crystalline silicon / perovskite tandem cell of Example 1 includes: A crystalline silicon bottom cell 10, a perovskite top cell substrate 21, and a transparent metal oxide layer 22 are stacked in sequence; a metal layer 23 located in the transparent metal oxide layer; and a metal electrode 24 located on the metal layer 23 .

[0053] The preparation method of the crystalline silicon / perovskite tandem cell of Example 1 comprises: S100a: forming a transparent metal oxide layer on the perovskite top cell substrate; S210a: placing the perovskite top cell substrate with the transparent metal oxide layer in a hydrogen plasma treatment device; wherein the temperature in the hydrogen plasma treatment device is 100°C, the pressure is 100 mTorr, and the RF power of the power supply is 0.2 W / cm 2 , hydrogen flow rate is 10ml / min; S220a: exposing the first region of the transparent metal oxide layer to hydrogen plasma for hydrogen plasma treatment for 30 minutes, so that the metal oxide in the first region is reduced to metal to form a metal layer; S300a: Printing a conductive paste (ultra-low temperature silver paste) on the metal layer and forming a metal electrode by curing; wherein the curing temperature of the conductive paste is 140°C.

[0054] Example 2 The specific structure and preparation method of the crystalline silicon / perovskite tandem cell of Example 2 are basically the same as those of Example 1, except that in Example 2, the temperature in the hydrogen plasma treatment equipment is 120°C, the pressure is 100 mTorr, and the RF power of the power supply is 0.1 W / cm 2 , the hydrogen flow rate is 8 ml / min, and the treatment time of the hydrogen plasma process is 30 minutes.

[0055] Example 3 The specific structure and preparation method of the crystalline silicon / perovskite tandem cell of Example 3 are basically the same as those of Example 1, except that, in Example 3, the temperature in the hydrogen plasma treatment equipment is 90°C, the pressure is 120 mTorr, and the RF power of the power supply is 0.3 W / cm 2 , the hydrogen flow rate is 10 ml / min, and the treatment time of the hydrogen plasma process is 20 minutes.

[0056] Example 4 The specific structure and preparation method of the crystalline silicon / perovskite tandem cell of Example 4 are basically the same as those of Example 1, except that, in Example 4, the temperature in the hydrogen plasma treatment equipment is 80°C, the pressure is 100 mTorr, and the RF power of the power supply is 0.2 W / cm 2 , the hydrogen flow rate is 12 ml / min, and the treatment time of the hydrogen plasma process is 40 minutes.

[0057] Example 5 The specific structure and preparation method of the crystalline silicon / perovskite tandem cell of Example 5 are basically the same as those of Example 1, except that in Example 5, the temperature in the hydrogen plasma treatment equipment is 100°C, the pressure is 80mTorr, and the RF power of the power supply is 0.2W / cm 2 , the hydrogen flow rate is 10 ml / min, and the treatment time of the hydrogen plasma process is 25 minutes.

[0058] Example 6 The specific structure and preparation method of the crystalline silicon / perovskite tandem cell of Example 6 are basically the same as those of Example 1, except that in Example 6, the temperature in the hydrogen plasma treatment equipment is 110°C, the pressure is 100 mTorr, and the RF power of the power supply is 0.15 W / cm 2 , the hydrogen flow rate is 15 ml / min, and the treatment time of the hydrogen plasma process is 30 minutes.

[0059] Example 7 The specific structure and preparation method of the crystalline silicon / perovskite tandem cell of Example 7 are basically the same as those of Example 1, except that in Example 7, the temperature in the hydrogen plasma treatment equipment is 100°C, the pressure is 90mTorr, and the RF power of the power supply is 0.25W / cm 2 , the hydrogen flow rate is 5 ml / min, and the treatment time of the hydrogen plasma process is 35 minutes.

[0060] In order to more clearly illustrate the technical effects of the embodiments of the present application, the present application also points out the structure and preparation method of the crystalline silicon / perovskite stacked cell of Comparative Example 1.

[0061] Comparative Example 1 The crystalline silicon / perovskite tandem cell of Comparative Example 1 comprises: The crystalline silicon bottom cell, the perovskite top cell substrate, the transparent metal oxide layer and the metal electrode are stacked in sequence.

[0062] The preparation method of the crystalline silicon / perovskite tandem cell of Example 1 comprises: S100b: forming a transparent metal oxide layer on the perovskite top cell substrate; S300b: Printing a conductive paste (high-temperature silver paste) on the metal area on the transparent metal oxide layer and forming a metal electrode by curing; wherein the curing temperature of the conductive paste is 300°C.

[0063] The following transmission line model test (TLM) is performed on the crystalline silicon / perovskite tandem cells provided in Examples 1-7 and Comparative Example 1 of the present application to obtain the contact resistivity (ρ c )、Contact resistance(R c )、Effective current transmission distance(L t ), and the test results are shown in Table 1.

[0064] Table 1

[0065] The present application also prepares the crystalline silicon / perovskite stacked cells of Examples 1-7 and Comparative Example 1 into photovoltaic devices, and conducts performance tests to obtain the open circuit voltage Voc, short circuit current density Jsc, fill factor FF, and photoelectric conversion efficiency PCE of the corresponding photovoltaic devices. The test results are shown in Table 2.

[0066] Table 2

[0067] According to the data in Table 1 and Table 2, compared with Comparative Example 1, the contact resistivity, contact resistance and effective current transmission distance of the crystalline silicon / perovskite stack cells of Examples 1-7 of the present application are significantly lower, and the fill factor FF and photoelectric conversion efficiency are improved.

[0068] In summary, in the preparation method of the crystalline silicon / perovskite stacked cell of the embodiment of the present application, a hydrogen plasma process is used to treat the first region (i.e., the metal region) of the transparent metal oxide layer, so that the metal oxide in the first region is reduced to metal to form a metal layer; a metal electrode is formed on the metal layer so that the metal electrode is in direct contact with the metal layer, thereby effectively reducing the contact resistance between the metal electrode formed by the ultra-low temperature slurry (a conductive slurry with a curing temperature of less than or equal to 150°C) and the transparent conductive oxide layer (i.e., the transparent metal oxide layer), and increasing the adhesion between the metal electrode and the transparent conductive oxide layer, thereby reducing the phenomenon of metal electrode shedding.

[0069] The present invention provides a photovoltaic module (not shown) comprising a crystalline silicon / perovskite tandem cell according to any of the above embodiments. The photovoltaic module also possesses the advantages of the above crystalline silicon / perovskite tandem cell, which will not be described in detail here.

[0070] The embodiments of the present application can provide a photovoltaic system, including the photovoltaic components in the above embodiments. The advantages of the above photovoltaic components are also possessed by the photovoltaic system, which will not be repeated here. The application field of the above photovoltaic system is wide, not only limited to photovoltaic power stations, such as ground power stations, rooftop power stations and water surface power stations, but also includes various equipment and devices that use solar energy to generate electricity, such as user solar power supplies, solar street lights, solar cars and solar buildings. Of course, it is understandable that the application scenarios of the photovoltaic system are not limited to this, that is, the photovoltaic system can be used in all fields that require solar energy to generate electricity. Taking the photovoltaic power generation system network as an example, the photovoltaic system may include a photovoltaic array, a junction box and an inverter. The photovoltaic array can be an array combination of multiple photovoltaic components. For example, multiple photovoltaic components can form multiple photovoltaic arrays. The photovoltaic array is connected to the junction box. The junction box can converge the current generated by the photovoltaic array. The converged current flows through the inverter to convert it into the alternating current required by the mains power grid and then connects to the mains power network to achieve solar power supply.

[0071] It should be noted that the terms "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc. are only for the convenience of describing this application and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting this application. The directional words "inside" and "outside" refer to the inside and outside relative to the outline of each component itself. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Therefore, the exemplary term "above..." can include both "above..." and "below..." orientations. The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatial relative descriptions used here are interpreted accordingly.

[0072] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that the terms used in this way are interchangeable where appropriate, so that the embodiments of the present application described herein can, for example, be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0073] It should also be noted that references to "one embodiment," "another embodiment," "an embodiment," etc., in this application refer to specific features, structures, or characteristics described in conjunction with that embodiment as included in at least one embodiment generally described in this application. The appearance of the same expression in multiple places in the specification does not necessarily refer to the same embodiment. Furthermore, when a specific feature, structure, or characteristic is described in conjunction with any embodiment, it is intended that such feature, structure, or characteristic, when implemented in conjunction with other embodiments, also fall within the scope of this application.

[0074] In the above embodiments, the description of each embodiment has its own focus. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0075] It should also be noted that the above are only preferred embodiments of the present application and do not limit the scope of patent protection of the present application. Any equivalent structure or equivalent process transformation made using the contents of the description and drawings of this application, or directly or indirectly applied in other related technical fields, are also included in the scope of patent protection of the present application.

Claims

1. A method for preparing a crystalline silicon / perovskite tandem cell, characterized in that: include: forming a transparent metal oxide layer on the perovskite top cell substrate; treating the first region of the transparent metal oxide layer with a hydrogen plasma process to form a metal layer; A metal electrode is prepared on the metal layer.

2. The method for preparing a crystalline silicon / perovskite tandem cell according to claim 1, wherein: The first region of the transparent metal oxide layer is treated by a hydrogen plasma process, comprising: The first region of the transparent metal oxide layer is exposed to hydrogen plasma for 20 minutes to 40 minutes.

3. The method for preparing a crystalline silicon / perovskite tandem cell according to claim 2, wherein: The hydrogen plasma process has at least one of the following conditions: The temperature is 80℃-120℃; Pressure is 80mTorr-120mTorr; The radio frequency power is 0.1W / cm 2 -0.3W / cm 2 ; The hydrogen flow rate is 5ml / min-15ml / min.

4. A crystalline silicon / perovskite tandem cell, characterized in that: include: Perovskite top cell substrate; A transparent metal oxide layer and a metal electrode are located on the perovskite top cell substrate and are stacked in sequence; A metal layer is disposed in the transparent metal oxide layer.

5. The crystalline silicon / perovskite tandem cell according to claim 4, characterized in that: The metal layer includes a metal oxide and a metal formed by reducing the metal oxide.

6. The crystalline silicon / perovskite tandem cell according to claim 4, characterized in that: The metallization degree of the metal layer gradually increases along the first direction.

7. The crystalline silicon / perovskite tandem cell according to claim 4, characterized in that: The interface of the metal layer in contact with the metal electrode is composed of a single metal substance.

8. The crystalline silicon / perovskite tandem cell according to claim 4, characterized in that: The transparent metal oxide layer includes one or more of tin-doped indium oxide, zinc-doped indium oxide, tungsten-doped indium oxide, molybdenum-doped indium oxide, fluorine-doped tin oxide, cerium-doped indium oxide, aluminum-doped zinc oxide, antimony-doped tin oxide, and boron-doped zinc oxide.

9. The crystalline silicon / perovskite tandem cell according to claim 4, characterized in that: The width of the metal layer is greater than or equal to the width of the metal electrode.

10. The crystalline silicon / perovskite tandem cell according to claim 4, characterized in that: The thickness of the metal layer is 10nm-100nm.

11. A photovoltaic module, characterized in that: It comprises a crystalline silicon / perovskite tandem cell prepared by the preparation method of the crystalline silicon / perovskite tandem cell according to any one of claims 1 to 3, or a crystalline silicon / perovskite tandem cell according to any one of claims 4 to 10.

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