Sampling resistor porous shunt

Abstract

The sampling resistor porous diverter comprises a manganese-copper plate body and red copper plate bodies on the two sides, the two sides of the manganese-copper plate body in the width direction are welded to the red copper plate bodies respectively, sampling points and a plurality of connecting holes are formed in the red copper plate bodies respectively, and the connecting holes are located in the edge positions of the sides, away from the manganese-copper plate body, of the red copper plate bodies; the connecting line between the midpoints of the two sides of the end face of the red copper plate body in the length direction is a center line, the sampling points of the red copper plate body are located in the area between the connecting hole and the welding seam formed by the red copper plate body and the manganese-copper plate body, and the two sampling points are distributed in an axial symmetry mode. The periphery of the sampling point of the red copper plate body is provided with an equal potential difference notch. The current field of the sampling resistor porous diverter is homogenized, sampling points are arranged in a mirror image mode with the center line of a plate body as the axis, no matter which side and which connecting holes are connected with loads, current vectors flowing into a manganese-copper area are always symmetrical about the center line, and additional voltage drop caused by single-side current crowding is eliminated.

Description

Technical Field

[0001] The present invention relates to a precision current sampling component, which is particularly suitable for applications requiring micro-ohm precision and multiple loads in parallel, such as high-voltage fast charging of new energy vehicles and energy storage converters. Background Art

[0002] Existing porous shunts are mostly used in charging equipment in the field of high-voltage fast charging. Most porous shunts are in the μΩ level. Porous shunts are connected to two or more groups of loads. The following problems exist in actual operation:

[0003] (1) The difference in load connection position leads to uneven current density distribution near the sampling point, and the resistance drift can exceed ±1μΩ (such as Figure 3 shown);

[0004] (2) The assembly stress causes micro-deformation of the copper-manganese copper plate and weld, further resulting in an error of more than ±5%;

[0005] (3) The traditional resistance repair method only opens a long groove in the center of the manganese copper, which cannot take into account the symmetry on both sides and has poor batch consistency.

[0006] Therefore, a highly stable porous shunt is needed that can control the resistance drift within ±0.01 μΩ regardless of the load combination and the change of the installation stress. Summary of the Invention

[0007] The purpose of the present invention is to provide a sampling resistor porous shunt to solve the problems raised in the above background technology:

[0008] (1) How to achieve micro-ohm precision for a porous manifold that is insensitive to load position and assembly stress?

[0009] To achieve the above object, the present invention provides the following technical solutions:

[0010] A sampling resistor porous shunt includes a manganese copper plate and two copper plates on either side. The two sides of the manganese copper plate in the width direction are welded to the copper plate respectively. The copper plates are respectively provided with sampling points and a plurality of connection holes. The plurality of connection holes are located at an edge position away from one side of the manganese copper plate and the copper plate.

[0011] The line connecting the midpoints of the two longitudinal sides of the copper plate end face is the center line. The sampling point of the copper plate is located on the center line between the connecting hole and the weld formed between the copper plate and the manganese copper plate. The two sampling points are axially symmetrically distributed.

[0012] On the basis of the above technical solution, the present invention can also be improved as follows.

[0013] Furthermore, resistance repair grooves are respectively provided on both sides of the length direction of the manganese copper plate, and the two resistance repair grooves are axially symmetrically distributed.

[0014] Furthermore, equal potential difference notches are opened around the sampling points of the copper plate.

[0015] Furthermore, the cross-section of the equipotential difference notch on the copper plate is a "concave"-shaped structure, and the sampling point of the copper plate extending into the equipotential difference notch forms a contact portion that is convenient for cooperating with the sampling terminal.

[0016] This structure evens out the current field in the sampling resistor's multi-hole shunt. The sampling points are arranged in a mirrored pattern about the plate's centerline. Regardless of which side or which holes are connected to the load, the current vector flowing into the manganese-copper zone remains symmetrical about the centerline, eliminating the additional voltage drop caused by unilateral current congestion. The symmetrical arrangement of the resistance repair slots allows for simultaneous increases and decreases in length, resulting in a linear relationship between resistance change and slot length. The additional thermoelectric potential generated by the symmetrical structure after welding the manganese-copper zone to the copper busbar is offset.

[0017] The beneficial effects of the sampling resistor porous shunt are:

[0018] (1) The resistance value changes ≤ ±0.01μΩ for any combination of load positions;

[0019] (2) The equipotential difference notch + boss structure eliminates the influence of assembly stress;

[0020] (3) Symmetrical resistance repair grooves on both sides, high batch consistency;

[0021] (4) The structure is compact and can directly replace the existing μΩ-level shunt without changing the busbar layout. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 It is a three-dimensional diagram of an embodiment of the sampling resistor porous shunt.

[0023] Figure 2 2 is a top view of an embodiment of the sampling resistor porous shunt.

[0024] Figure 3 This is a comparison chart of the test results of a conventional porous shunt in the comparative experiment of the sampling resistor porous shunt embodiment.

[0025] Figure 4 This is a comparison chart of the test results of the sampling resistor porous shunt in the comparative experiment in the embodiment of the sampling resistor porous shunt.

[0026] Description of the numbers in the figure:

[0027] Manganese copper plate 100; resistance repair groove 110; copper plate 200; connection hole 220; equal potential difference notch 211; contact portion 212. DETAILED DESCRIPTION

[0028] To make the above-mentioned objects, features, and advantages of the present invention more readily apparent, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings. The following description sets forth numerous specific details to facilitate a full understanding of the present invention. However, the present invention can be implemented in many other ways than those described herein, and those skilled in the art may make similar modifications without departing from the scope of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0029] The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only and do not represent the only implementations.

[0030] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this invention pertains. The terms used in this specification of the present invention are for the purpose of describing specific embodiments only and are not intended to limit the present invention. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0031] See also Figures 1 to 2 .

[0032] The sampling resistor porous shunt includes a manganese copper plate 100 and two copper plates 200 on both sides. The two sides of the manganese copper plate 100 in the width direction are welded to the copper plate 200 respectively. The copper plate 200 is provided with a sampling point and two connection holes 220 respectively. Several connection holes 220 are located at the edge of the copper plate 200 away from the manganese copper plate 100.

[0033] The line connecting the midpoints of the two longitudinal sides of the end face of the copper plate 200 is the center line. The sampling point of the copper plate 200 is located on the center line of the area between the connecting hole 220 and the weld formed by the copper plate 200 and the manganese copper plate 100. The two sampling points are axially symmetrically distributed along the manganese copper plate 100.

[0034] An equipotential difference notch 211 is opened around the sampling point of the copper plate 200. The cross-section of the equipotential difference notch 211 on the copper plate 200 is a "concave" structure, so that the sampling point is completely surrounded by the equipotential difference notch 211 except for the area facing the side of the manganese copper plate 100. The portion of the copper plate 200 extending into the equipotential difference notch 211 forms a contact portion 212 that is convenient for mating with the sampling terminal, and the sampling point is set on the contact portion 212.

[0035] Resistance repair grooves 110 are respectively provided on both sides of the manganese copper plate 100 in the length direction, and the two resistance repair grooves 110 are axially symmetrically distributed along the manganese copper plate 100.

[0036] Comparative experiment: The porous shunt in the prior art and the porous shunt of the sampling resistor are selected (the specifications and parameter calibration of the porous shunt in the prior art and the porous shunt of the sampling resistor are consistent), and the resistance measurement results of the shunt are simulated by a high-precision resistance tester when the load current is different.

[0037] like Figure 3 As shown, the comparative product uses a conventional porous diverter available on the market (which can connect two sets of loads). The sampling point of the conventional porous diverter is selected on the side wall of the manganese copper plate 100, and is welded to the sampling point of the manganese copper plate 100 by flying wires in the figure.

[0038] like Figure 4 As shown, the sampling point of the sampling resistor multi-hole shunt (which can be connected to two groups of loads) is selected on the copper plate 200, and is welded to the sampling point of the copper plate 200 by flying wires.

[0039] It can be seen that when the sampling resistor porous shunt is in use, no matter how the load is connected to the copper plates 200 on both sides or how the load changes, the measured resistance value varies within ±0.01 μΩ of the standard value.

[0040] The above is only one embodiment of the present invention. It should be pointed out that for ordinary technicians in this field, several modifications and improvements can be made without departing from the principles of the present invention, and these should also be regarded as falling within the scope of protection of the present invention.

Claims

1. A sampling resistor porous shunt, comprising a manganese copper plate (100) and two copper plates (200) on both sides, wherein the two sides of the manganese copper plate (100) in the width direction are respectively welded to the copper plate (200), and the copper plate (200) is respectively provided with a sampling point and a plurality of connection holes (220), wherein the plurality of connection holes (220) are located at an edge position away from the manganese copper plate (100) and the copper plate (200), and ... The line connecting the midpoints of the two longitudinal sides of the end face of the copper plate (200) is the center line. The sampling point of the copper plate (200) is located on the center line between the connecting hole (220) and the weld formed between the copper plate (200) and the manganese copper plate (100). The two sampling points are axially symmetrically distributed.

2. The sampling resistor porous shunt according to claim 1, characterized in that: Resistance repair grooves (110) are respectively provided on both sides of the manganese copper plate (100) in the length direction, and the two resistance repair grooves (110) are distributed in an axisymmetric manner.

3. The sampling resistor porous shunt according to claim 1, characterized in that: Equipotential difference notches (211) are provided around the sampling points of the copper plate (200).

4. The sampling resistor porous shunt according to claim 3, characterized in that: The cross-section of the equipotential difference notch (211) on the copper plate (200) is a "concave"-shaped structure; the portion of the copper plate (200) extending into the equipotential difference notch (211) forms a contact portion (212) that is convenient for mating with a sampling terminal; and a sampling point is provided on the contact portion (212).

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