Semiconductor device and method for manufacturing semiconductor device

Abstract

According to one embodiment, a semiconductor device includes a circuit board having a first surface facing a first side and a second surface facing a second side opposite to the first side. A chip is mounted on the first surface. The heat transfer member is bonded to the second surface via a first bonding layer. The heat dissipation member is bonded to the surface of the heat conduction member facing the second side via a second bonding layer. Each of the first bonding layer and the second bonding layer is a sintered body.

Description

TECHNICAL FIELD

[0001] Embodiments of the present application relate to a semiconductor device and a manufacturing method of a semiconductor device.

[0002] This application is based on Japanese Patent Application No. 2023-152072 filed on September 20, 2023 in Japan, the content of which is incorporated herein by reference. BACKGROUND

[0003] In a semiconductor device, the amount of heat generated by a chip mounted on a substrate tends to increase. In addition, in a case where the substrate and a heat dissipation member are joined by solder, a void is likely to be formed inside the solder, and thus there is a case where the thermal resistance between the substrate and the heat dissipation member increases. In this case, since the amount of heat transferred from the chip to the heat dissipation member decreases, the amount of heat dissipated from the heat dissipation member decreases, and thus the temperature of the chip can become excessively high. If the temperature of the chip becomes excessively high, the operation of the semiconductor device can become unstable.

[0004] PRIOR ART DOCUMENTS

[0005] PATENT DOCUMENTS

[0006] Patent Document 1: Japanese Patent Application Publication No. 2021-125477 SUMMARY

[0007] PROBLEMS TO BE SOLVED BY THE INVENTION

[0008] The present application is to provide a semiconductor device capable of suppressing the temperature of a chip from becoming excessively high.

[0009] MEANS FOR SOLVING THE PROBLEMS

[0010] The semiconductor device of the embodiment has a circuit substrate having a first surface facing a first side and a second surface facing a second side opposite to the first side. A chip is mounted on the first surface. A thermally conductive member is joined to the second surface via a first joining layer. A heat dissipation member is joined to a surface of the thermally conductive member facing the second side via a second joining layer. The first joining layer and the second joining layer are each a sintered body. BRIEF DESCRIPTION OF DRAWINGS

[0011] Figure 1 is a schematic cross-sectional view showing a semiconductor device of a first embodiment.

[0012] Figure 2 is a schematic cross-sectional view showing a part of the semiconductor device of the first embodiment.

[0013] Figure 3 is a flowchart showing a manufacturing method of the semiconductor device of the first embodiment.

[0014] Figure 4 This is a first schematic cross-sectional view illustrating the method for manufacturing the semiconductor device according to the first embodiment.

[0015] Figure 5 This is a second schematic cross-sectional view illustrating the method for manufacturing the semiconductor device according to the first embodiment.

[0016] Figure 6 This is a third schematic cross-sectional view illustrating the method for manufacturing the semiconductor device according to the first embodiment.

[0017] Figure 7 This is a schematic cross-sectional view showing a portion of a semiconductor device according to a second embodiment.

[0018] Figure 8 This is a flowchart showing a method for manufacturing a semiconductor device according to the second embodiment.

[0019] Figure 9 This is a first schematic cross-sectional view illustrating the method for manufacturing a semiconductor device according to the second embodiment.

[0020] Figure 10 This is a second schematic cross-sectional view illustrating the method for manufacturing the semiconductor device according to the second embodiment.

[0021] Figure 11 This is a schematic cross-sectional view showing a portion of a semiconductor device according to a third embodiment.

[0022] Figure 12 This is a schematic cross-sectional view showing a portion of a semiconductor device according to a fourth embodiment.

[0023] Figure 13 This is a diagram showing a portion of the semiconductor device according to the fourth embodiment as viewed from the first side. DETAILED DESCRIPTION

[0024] Hereinafter, a semiconductor device and a method for manufacturing the semiconductor device according to embodiments will be described with reference to the drawings.

[0025] The Z-axis direction shown in each drawing is the vertical direction. The side to which the arrow in the Z-axis direction points (+Z side) is the upper side in the vertical direction. The opposite side to which the arrow in the Z-axis direction points (-Z side) is the lower side in the vertical direction. In the following description, the upper side in the vertical direction is referred to as the "upper side" or "first side", and the lower side in the vertical direction is referred to as the "lower side" or "second side". The second side is the opposite side of the first side. In addition, "upper side" and "lower side" are not terms that indicate the relationship with the direction of gravity, respectively. In addition, in the following description, the surface facing the first side of the outer surfaces of the components and layers constituting the semiconductor device is referred to as the surface, and the surface facing the second side is referred to as the back surface.

[0026] (First embodiment)

[0027] Figure 1 This is a schematic cross-sectional view of a semiconductor device 10 according to this embodiment. The semiconductor device 10 according to this embodiment is, for example, a power semiconductor device such as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) or an IGBT (Insulated Gate Bipolar Transistor). The semiconductor device 10 includes a housing 20, a heat sink 31, a main body 32, a terminal portion 50, and a sealing member 60. Alternatively, the semiconductor device 10 may not include the housing 20.

[0028] The housing 20 accommodates the main body 32 , the terminal portion 50 , and the seal 60 . In this embodiment, the housing 20 is made of resin and includes a peripheral wall 21 and a cover member 22 .

[0029] The peripheral wall portion 21 surrounds the main body portion 32, the terminal portion 50, and the seal 60. The peripheral wall portion 21 is cylindrical and extends in the vertical direction. In the present embodiment, the peripheral wall portion 21 is a square cylindrical shape. The peripheral wall portion 21 can also be other shapes such as a cylindrical shape or a hexagonal cylindrical shape. The peripheral wall portion 21 has a first opening 21a that opens upward and a second opening 21b that opens downward.

[0030] The cover member 22 is a plate-shaped member extending in a direction perpendicular to the vertical direction. In this embodiment, the cover member 22 is substantially rectangular when viewed from the vertical direction. The cover member 22 is fixed to the upper end of the peripheral wall portion 21. The cover member 22 blocks the first opening 21a.

[0031] The heat dissipation component 31 is in the shape of a plate extending in a direction perpendicular to the vertical direction. The heat dissipation component 31 is fixed to the lower end of the peripheral wall portion 21. The heat dissipation component 31 blocks the second opening 21b of the peripheral wall portion 21. The main body portion 32 is joined to the surface 31a of the heat dissipation component 31. The back surface 31b of the heat dissipation component 31 is exposed to the outside of the semiconductor device 10. In this embodiment, the heat dissipation component 31 is made of metal. The heat dissipation component 31 is made of metal such as copper, aluminum, nickel, silver, and gold. In this embodiment, the heat dissipation component 31 is made of copper. Figure 2 As shown, the outer surface of the heat sink 31 is covered with a nickel protective film 31d. In this embodiment, the protective film 31d is formed by gold plating. The heat sink 31 can also be made of other materials such as a metal matrix composite material in which silicon carbide particles are dispersed in an aluminum alloy.

[0032] The main body 32 is an inverter that generates a high-frequency AC current from a DC current supplied from an external power source (not shown). The main body 32 may also be a converter. Figure 1 As shown, the main body 32 is housed inside the housing 20. In this embodiment, the semiconductor device 10 has a plurality of main bodies 32. Figure 2 As shown, the main body 32 includes a circuit board 33 , a first bonding layer 37 , a heat conducting member 38 , a second bonding layer 39 , a chip 40 , and leads 41 .

[0033] The circuit board 33 extends in a direction perpendicular to the vertical direction. The circuit board 33 is housed within the housing 20. The circuit board 33 has a first surface 33a and a second surface 33b. The first surface 33a is the surface of the circuit board 33's outer surface facing the first side (+Z side). The first surface 33a is the top surface of the circuit board 33. The second surface 33b is the surface of the circuit board 33's outer surface facing the second side (-Z side). The second surface 33b is the back surface of the circuit board 33. The circuit board 33 includes an insulating substrate 34, a circuit portion 35, and a conductor portion 36.

[0034] The insulating substrate 34 is a plate-shaped structure extending in a direction perpendicular to the vertical direction. The insulating substrate 34 has insulating properties. The insulating substrate 34 is a ceramic substrate. The insulating substrate 34 is made of ceramics such as silicon nitride and aluminum nitride, for example.

[0035] The circuit portion 35 is provided on the surface 34a of the insulating substrate 34. The circuit portion 35 is made of metal. In this embodiment, the circuit portion 35 is made of copper. The circuit portion 35 may also be made of other metals such as silver and gold. A circuit pattern (not shown) is formed on the circuit portion 35. The surface of the circuit portion 35 is the first surface 33a. In a direction perpendicular to the vertical direction, the dimensions of the circuit portion 35 are smaller than those of the insulating substrate 34.

[0036] The conductor portion 36 is provided on the surface of the insulating substrate 34 facing the back surface 34b, i.e., the second side (-Z side). The conductor portion 36 is made of metal. In the present embodiment, the conductor portion 36 is made of copper. The conductor portion 36 may also be made of other metals such as silver and gold. The back surface of the conductor portion 36 is the second surface 33b. In a direction perpendicular to the vertical direction, the size of the conductor portion 36 is smaller than that of the insulating substrate 34. In a direction perpendicular to the vertical direction, the size of the conductor portion 36 is approximately the same as that of the circuit portion 35. In addition, the outer edge of the insulating substrate 34 is located further outward than the outer edge of the circuit portion 35 and the outer edge of the conductor portion 36. In the present embodiment, the insulating substrate 34 increases the creepage distance between the circuit portion 35 and the conductor portion 36, thereby enabling the circuit portion 35 and the conductor portion 36 to be insulated from each other. In addition, in a direction perpendicular to the vertical direction, the size of the conductor portion 36 may be smaller or larger than that of the circuit portion 35.

[0037] In this embodiment, the thickness of the conductor portion 36 is substantially the same as the thickness of the circuit portion 35. Thus, even if the temperature of the circuit board 33 rises due to the heat generated in the chip 40, the difference in thermal expansion between the conductor portion 36 and the circuit portion 35 can be reduced. Consequently, the stress applied to the insulating substrate 34 due to the difference in thermal expansion between the conductor portion 36 and the circuit portion 35 can be suppressed, thereby preventing damage to the insulating substrate 34.

[0038] The heat-conducting component 38 transfers the heat generated in the chip 40 to the heat dissipation component 31. The heat-conducting component 38 is in the shape of a plate extending in a direction perpendicular to the vertical direction. The heat-conducting component 38 is housed inside the housing 20. The heat-conducting component 38 is arranged below the circuit substrate 33. The heat-conducting component 38 is bonded to the second surface 33b of the circuit substrate 33 via the first bonding layer 37. The heat-conducting component 38 is bonded to the conductor portion 36 via the first bonding layer 37. The heat-conducting component 38 is made of metal. In this embodiment, the heat-conducting component 38 is made of copper. The heat-conducting component 38 may also be made of other metals such as silver and gold.

[0039] The thickness of the thermally conductive member 38 is thicker than that of the conductor portion 36. In this embodiment, the thickness of the thermally conductive member 38 is thicker than that of the circuit substrate 33. The thickness of the thermally conductive member 38 may be the same as that of the circuit substrate 33, or may be thinner than that of the circuit substrate 33. In this embodiment, the outer edge of the thermally conductive member 38 overlaps with the outer edge of the conductor portion 36 when viewed from the first side (+Z side). Alternatively, the outer edge of the thermally conductive member 38 may surround the outer edge of the conductor portion 36 when viewed from the first side.

[0040] The first bonding layer 37 joins the circuit board 33 to the thermally conductive component 38. More specifically, the first bonding layer 37 joins the conductor portion 36 to the thermally conductive component 38. In this embodiment, the first bonding layer 37 is a sintered copper body. It can also be a sintered body made of other metals such as silver, or other materials such as ceramics. The first bonding layer 37 is a copper film formed by applying a copper paste containing copper particles dispersed in a solvent to at least one of the thermally conductive component 38 and the conductor portion 36, and then firing the paste while the paste is in contact with both the thermally conductive component 38 and the conductor portion 36. The method for applying the copper paste is not particularly limited, and it can be applied by known methods such as screen printing and inkjet printing. Alternatively, a pre-formed sheet of copper paste can be used. Since the first bonding layer 37 is a sintered body, the formation of voids within the first bonding layer 37 is suppressed compared to, for example, a case where the first bonding layer 37 is made of solder. The thickness of the first bonding layer 37 is thinner than the thickness of the conductor portion 36 and the thickness of the thermally conductive component 38. From the perspective of bonding strength between the circuit board 33 and the thermally conductive member 38, the thickness of the first bonding layer 37 is preferably 10 μm or greater. Furthermore, from the perspective of the time required to bake the first bonding layer 37, the thickness of the first bonding layer 37 is preferably 100 μm or less. In this embodiment, the thickness of the first bonding layer 37 is approximately 50 μm.

[0041] The second bonding layer 39 bonds the heat dissipating component 31 to the heat conducting component 38. The heat dissipating component 31 is bonded to the surface of the heat conducting component 38 facing the back surface 38b, i.e., the second side (-Z side), via the second bonding layer 39. In the present embodiment, the second bonding layer 39 is a sintered body made of silver. The second bonding layer 39 may also be a sintered body made of other metals such as copper, or other materials such as ceramics. The second bonding layer 39 is a silver film formed by applying a silver paste in which silver particles are dispersed in a solvent to at least one of the heat dissipating component 31 and the heat conducting component 38, and firing the silver paste in a state of contact with both the heat dissipating component 31 and the heat conducting component 38. Since the second bonding layer 39 is a sintered body, the formation of voids inside the second bonding layer 39 can be suppressed compared to, for example, a case where the second bonding layer 39 is made of solder. The thickness of the second bonding layer 39 is thinner than that of the heat conducting component 38. From the perspective of the bonding strength between the heat dissipating component 31 and the heat conducting component 38, the thickness of the second bonding layer 39 is preferably 10 μm or more. Furthermore, the thickness of the second bonding layer 39 is preferably 100 μm or less from the viewpoint of the working time for firing the second bonding layer 39. In the present embodiment, the thickness of the second bonding layer 39 is approximately 50 μm.

[0042] The chip 40 is mounted on the first surface 33a of the circuit substrate 33. The chip 40 includes, for example, a power element for power control. When the chip 40 is a MOSFET or a gallium nitride (GaN) device, the drain electrode of the chip 40 is mounted on the circuit substrate 33 via a mounting material composed of a solder or sintered material. When the chip 40 is an IGBT, the collector electrode of the chip 40 is mounted on the circuit substrate 33 via a mounting material composed of a solder or sintered material. The chip 40 is composed of, for example, semiconductor materials such as silicon (Si), silicon carbide (SiC) and gallium nitride. The number of chips 40 provided in each main body 32 can be one or more. Although not shown in the figure, in this embodiment, each main body 32 has a plurality of chips 40. When viewed from the vertical direction, the chip 40 overlaps with the circuit substrate 33, the first bonding layer 37, the heat conducting component 38, the second bonding layer 39 and the heat dissipating component 31 respectively. A plurality of electrode portions, not shown in the figure, are provided on the surface 40a of the chip 40.

[0043] The lead 41 connects the chip 40 to the circuit portion 35. The lead 41 is made of a metal such as aluminum and copper. In this embodiment, the lead 41 is made of aluminum. Each main body portion 32 has a plurality of leads 41. One end of each lead 41 is bonded to a different electrode portion of the chip 40. In more detail, when the chip 40 is a MOSFET or a gallium nitride device, one lead 41 is connected to the source electrode, and another lead 41 is connected to the gate electrode. In addition, when the chip 40 is an IGBT, one lead 41 is connected to the emitter electrode, and another lead 41 is connected to the gate electrode. The other end of each lead 41 is bonded to the circuit portion 35. Thus, each lead 41 electrically connects the chip 40 to the circuit substrate 33.

[0044] The terminal portion 50 electrically connects an external power source (not shown) and an object (not shown) to the circuit board. The object is a device to which the current generated by the semiconductor device 10 is supplied, such as a driving device. Figure 1 As shown, one end of the terminal portion 50 is held by the housing 20. One end of the terminal portion 50 is joined to an electrode (not shown) provided on the peripheral wall portion 21. Figure 2 As shown, the other end of the terminal portion 50 is joined to the circuit portion 35. Thus, when current is supplied to the circuit board 33 from an external power source (not shown), the circuit board 33 generates an output current of a predetermined waveform and supplies the output current to an object.

[0045] like Figure 1As shown, the sealant 60 covers the main body 32 and the terminal portion 50. The sealant 60 covers the circuit substrate 33, the chip 40 and the lead 41 respectively. The sealant 60 is made of an insulating resin. For example, the sealant 60 is made of a resin mainly including silicone resin, epoxy resin, phenolic resin or acrylic resin. In this embodiment, the sealant 60 is made of silicone resin. According to this embodiment, the sealant 60 can ensure the insulation of the leads 41 from each other, the insulation of the leads 41 from the terminal portion 50, and the insulation of the multiple electrode portions of the chips 40 from each other. In addition, the main body 32 can be protected by the sealant 60. As a result, the stability of the operation of the semiconductor device 10 can be improved.

[0046] Next, a heat transfer path for dissipating heat generated in the chip 40 to the outside of the semiconductor device 10 via the circuit substrate 33, the heat conducting member 38, and the heat dissipating member 31 will be described. Figure 2 In the figure, the heat transfer path is schematically indicated by arrow H. The heat generated in the chip 40 is transferred downward while spreading in the direction perpendicular to the vertical direction in the circuit substrate 33, and is then transferred to the heat conducting member 38 via the first bonding layer 37. The heat transferred to the heat conducting member 38 is transferred downward while spreading in the direction perpendicular to the vertical direction in the heat conducting member 38, and is then transferred to the heat dissipating member 31 via the second bonding layer 39. The heat transferred to the heat dissipating member 31 is transferred downward while spreading in the direction perpendicular to the vertical direction in the heat dissipating member 31, and is dissipated from the back surface 31b of the heat dissipating member 31 to the outside of the semiconductor device 10. In this way, the heat generated in the chip 40 is dissipated to the outside of the semiconductor device 10.

[0047] As described above, heat transferred to the heat conductive member 38 is transferred downward while spreading in a direction perpendicular to the vertical direction within the heat conductive member 38. Therefore, the area A11 of the surface 31a of the heat sink 31 through which heat is transferred from the heat conductive member 38 is larger than the area A12 of the surface 38a of the heat conductive member 38 through which heat is transferred from the circuit substrate 33. Assuming that the semiconductor device 10 does not include the heat conductive member 38, that is, in a configuration in which the heat conductive member 31 is bonded to the circuit substrate 33, the area of ​​the surface 31a of the heat sink 31 through which heat is transferred from the circuit substrate 33 is approximately the same as the area A12. Therefore, in this embodiment, by providing the heat conductive member 38 between the circuit substrate 33 and the heat sink 31, the area A11 through which heat generated by the chip 40 is transferred to the heat sink 31 can be increased.

[0048] Next, a method for manufacturing the semiconductor device 10 of this embodiment will be described. Figure 3As shown, the manufacturing method of the semiconductor device 10 of this embodiment includes: a first bonding step S01, forming a second bonding layer 39 by pressure sintering, and bonding the heat conductive component 38 to the heat dissipation component 31 via the second bonding layer 39; a second bonding step S02, forming a first bonding layer 37 by non-pressure sintering, and bonding the circuit substrate 33 with the chip 40 mounted thereon to the heat conductive component 38 via the first bonding layer 37; a wiring step S03, bonding the terminal portion 50 to the circuit substrate 33; and a filling step S04, filling the interior of the peripheral wall portion 21 with the sealing material 60. In the following description, "operators, etc." include operators performing various operations and assembly equipment, etc. Each operation may be performed solely by the operator, solely by the assembly equipment, or by both the operator and the assembly equipment.

[0049] In the first bonding step S01, the second bonding layer 39 is formed by pressure sintering, and the heat conducting member 38 and the heat dissipating member 31 are bonded via the second bonding layer 39. Figure 4 As shown, in the first bonding step S01, the operator first applies the above-mentioned silver paste to at least one of the heat dissipation component 31 and the heat conductive component 38. Next, the operator brings the surface 31a of the heat dissipation component 31 into contact with the back surface 38b of the heat conductive component 38 via the silver paste. Next, the operator pressurizes the silver paste by pressing the heat conductive component 38 from the upper side while performing pressure sintering of the silver paste. If the silver particles contained in the silver paste are combined with each other to form a silver sintered body, namely the second bonding layer 39, the heat conductive component 38 and the heat dissipation component 31 are bonded via the second bonding layer 39. When the second bonding layer 39 is formed, the first bonding step S01 is completed.

[0050] In the second bonding step S02, the first bonding layer 37 is formed by non-pressure sintering, and the circuit substrate 33 on which the chip 40 is mounted is bonded to the heat conducting member 38 via the first bonding layer 37. Figure 5As shown, in the second bonding step S02, the operator first applies the copper paste to at least one of the thermally conductive component 38 and the conductor portion 36. Furthermore, in this embodiment, in a step prior to the second bonding step S02, the circuit portion 35 and the conductor portion 36 are each provided on the insulating substrate 34. Furthermore, in a step prior to the second bonding step S02, the chip 40 is mounted on the first surface 33a, and leads 41 are bonded to the chip 40 and the circuit portion 35. Next, the operator brings the surface 38a of the thermally conductive component 38 into contact with the back surface of the conductor portion 36, i.e., the second surface 33b of the circuit substrate 33, via the copper paste. The operator then performs a non-pressure sintering process, sintering the copper paste without applying pressure. When the copper particles contained in the copper paste bond to form a copper sintered body, i.e., the first bonding layer 37, the circuit substrate 33 and the thermally conductive component 38 are bonded via the first bonding layer 37. More specifically, the conductor portion 36 and the thermally conductive component 38 are bonded via the first bonding layer 37. Once the first bonding layer 37 is formed, the second bonding step S02 is completed.

[0051] In the wiring step S03, the terminal portion 50 is joined to the circuit substrate 33. Figure 6 As shown, in the wiring step S03, the operator first moves the heat sink 31, to which each main body 32 is attached, from the lower side of the peripheral wall 21 toward the upper side, and then inserts each main body 32 into the interior of the peripheral wall 21 through the second opening 21b. The operator then secures the heat sink 31 to the lower end of the peripheral wall 21. The operator then connects one end of the terminal 50 to an electrode (not shown) on the peripheral wall 21 and the other end of the terminal 50 to the circuit portion 35. Once the terminal 50 is connected to the circuit substrate 33, the wiring step S03 is complete.

[0052] In the filling process S04, the sealing material 60 is filled into the interior of the peripheral wall portion 21. In the filling process S04, the operator first fills the sealing material 60 into the interior of the peripheral wall portion 21 using a filling device (not shown). The filling device fills the gel-like sealing material 60 into the interior of the peripheral wall portion 21. Figure 1 As shown, when the operator fills the gel seal 60 inside the peripheral wall portion 21 to cover the main body portion 32 and the terminal portion 50, the filling of the gel seal 60 is completed. Next, the operator fixes the cover member 22 to the upper end of the peripheral wall portion 21. Then, the operator solidifies the gel seal 60. When the seal 60 is solidified, the filling step S04 is completed. When the filling step S04 is completed, the manufacturing Figure 1 The semiconductor device 10 shown in FIG. In the filling step S04 , the cover member 22 may be fixed to the upper end of the peripheral wall portion 21 after the gel-like sealing material 60 is cured.

[0053] According to this embodiment, the semiconductor device 10 includes: a circuit substrate 33 having a first surface 33a facing a first side (+Z side) and a second surface 33b facing a second side (-Z side) opposite the first side; a chip 40 mounted on the first surface 33a; a thermally conductive member 38 bonded to the second surface 33b via a first bonding layer 37; and a heat sink 31 bonded to the back surface 38b, i.e., the surface facing the second side, of the thermally conductive member 38 via a second bonding layer 39. The first bonding layer 37 and the second bonding layer 39 are both sintered bodies. Therefore, since the circuit substrate 33 is bonded to the heat sink 31 via the thermally conductive member 38, the area A11 over which heat generated by the chip 40 is transferred to the heat sink 31 can be increased, as described above. This increases the amount of heat transferred from the chip 40 to the heat sink 31, thereby increasing the amount of heat dissipated from the heat sink 31 to the outside of the semiconductor device 10. Consequently, the temperature of the chip 40 can be prevented from becoming excessively high. Consequently, the operational stability of the semiconductor device 10 can be improved.

[0054] When the first bonding layer 37 and the second bonding layer 39 are made of solder, the molten solder easily entraps air during bonding, easily forming voids within the first bonding layer 37 and the second bonding layer 39. Furthermore, when the semiconductor device 10 is operating, the temperatures of the first bonding layer 37 and the second bonding layer 39 repeatedly rise and fall due to heat generated in the chip 40. When the first bonding layer 37 and the second bonding layer 39 are made of solder, the solder easily becomes brittle due to repeated thermal expansion and contraction, easily forming voids within the first bonding layer 37 and the second bonding layer 39. Therefore, when the first bonding layer 37 and the second bonding layer 39 are made of solder, the thermal resistance of the first bonding layer 37 and the thermal resistance of the second bonding layer 39 are easily increased. In contrast, in this embodiment, the first bonding layer 37 and the second bonding layer 39 are each sintered, so the formation of voids within the first bonding layer 37 and the second bonding layer 39 can be suppressed during the first bonding step S01 and the second bonding step S02. Furthermore, because the strength of first bonding layer 37 and second bonding layer 39 is higher than that of solder, even with repeated thermal expansion and contraction, the formation of voids within first bonding layer 37 and second bonding layer 39 can be suppressed. This prevents increases in the thermal resistance of first bonding layer 37 and second bonding layer 39, thereby suppressing a decrease in the amount of heat transferred from chip 40 to heat sink 31. Consequently, excessive increases in the temperature of chip 40 can be further suppressed, further improving the operational stability of semiconductor device 10.

[0055] According to this embodiment, the outer surface of the heat sink 31 is covered with a nickel protective film 31d, and the second bonding layer 39 is a sintered body made of silver. Therefore, compared to a case where the second bonding layer 39 is a sintered body made of copper, the bonding strength between the second bonding layer 39 and the protective film 31d can be improved. This can suppress an increase in the thermal resistance between the second bonding layer 39 and the heat sink 31, thereby increasing the amount of heat transferred from the chip 40 to the heat sink 31. Consequently, the temperature of the chip 40 can be more appropriately suppressed from becoming excessively high, thereby further improving the operational stability of the semiconductor device 10.

[0056] According to this embodiment, the thermally conductive component 38 is made of copper, and the first bonding layer 37 is a sintered copper body. Therefore, the thermally conductive component 38 and the first bonding layer 37 are made of the same material, thereby improving the bonding strength between the thermally conductive component 38 and the first bonding layer 37. This prevents an increase in thermal resistance between the thermally conductive component 38 and the first bonding layer 37, thereby increasing the amount of heat transferred from the chip 40 to the heat sink 31. Consequently, excessive temperature increases in the chip 40 can be more effectively prevented, thereby further improving the operational stability of the semiconductor device 10.

[0057] Furthermore, in this embodiment, as described above, the thermally conductive member 38 and the first bonding layer 37 are made of the same material. Therefore, even when the first bonding layer 37 is formed by non-pressure sintering, a decrease in the bonding strength between the thermally conductive member 38 and the first bonding layer 37 can be suppressed. Consequently, even when the first bonding layer 37 is formed by non-pressure sintering, an increase in the thermal resistance between the thermally conductive member 38 and the circuit board 33 can be suppressed. Consequently, a decrease in the amount of heat transferred from the chip 40 to the heat dissipating member 31 can be suppressed, thereby preventing the temperature of the chip 40 from becoming excessively high.

[0058] According to this embodiment, the circuit board 33 includes an insulating substrate 34 having insulating properties, and a copper conductor portion 36 provided on the surface of the insulating substrate 34 facing the back surface 34b, i.e., the second side (-Z side). The conductor portion 36 is bonded to the thermally conductive member 38 via a first bonding layer 37. Since the conductor portion 36 and the first bonding layer 37 are made of the same material, the bonding strength between the conductor portion 36 and the first bonding layer 37 can be improved. This prevents an increase in thermal resistance between the conductor portion 36 and the first bonding layer 37, thereby increasing the amount of heat transferred from the chip 40 to the heat dissipation member 31. Consequently, the temperature of the chip 40 can be more appropriately prevented from becoming excessively high, thereby further improving the operational stability of the semiconductor device 10.

[0059] Furthermore, in this embodiment, as described above, the conductor portion 36 and the first bonding layer 37 are made of the same material. Therefore, even when the first bonding layer 37 is formed by non-pressure sintering, a decrease in the bonding strength between the conductor portion 36 and the first bonding layer 37 can be suppressed. Consequently, even when the first bonding layer 37 is formed by non-pressure sintering, an increase in the thermal resistance between the heat conducting member 38 and the circuit board 33 can be suppressed. Consequently, a decrease in the amount of heat transferred from the chip 40 to the heat dissipating member 31 can be suppressed, and thus, an excessive increase in the temperature of the chip 40 can be more appropriately suppressed.

[0060] According to this embodiment, the outer edge of the heat conducting member 38 overlaps with the outer edge of the conductor portion 36 when viewed from the first side (+Z side). Therefore, compared to a case where the outer edge of the heat conducting member 38 is positioned inward of the outer edge of the conductor portion 36 when viewed from the first side, it is easier to suppress the area of ​​the surface 38a of the heat conducting member 38 through which heat is transferred from the conductor portion 36 from being narrowed. This can suppress a decrease in the amount of heat transferred from the conductor portion 36 to the heat conducting member 38. Consequently, a decrease in the amount of heat transferred from the chip 40 to the heat dissipating member 31 can be suppressed, and thus, the temperature of the chip 40 can be more appropriately suppressed from becoming excessively high.

[0061] According to this embodiment, the method for manufacturing a semiconductor device 10 includes: a first bonding step S01 of forming a second bonding layer 39 by pressure sintering and bonding the heat conducting member 38 to the heat dissipating member 31 via the second bonding layer 39; and a second bonding step S02 of forming a first bonding layer 37 by non-pressure sintering and bonding the circuit board 33 with the chip 40 mounted thereon to the heat conducting member 38 via the first bonding layer 37. Therefore, since the first bonding layer 37 is formed by non-pressure sintering in the second bonding step S02, the first bonding layer 37 can be formed without applying downward pressure to the first surface 33a on which the chip 40 is mounted. This prevents interference between a jig or the like that applies downward pressure to the first surface 33a and the chip 40 mounted thereon and the wires 41 bonded thereto. Consequently, damage to the chip 40 and the wires 41 can be prevented in the second bonding step S02. Consequently, a decrease in the yield of the semiconductor device 10 can be suppressed, and the operational stability of the semiconductor device 10 can be improved.

[0062] Furthermore, in this embodiment, as described above, the second bonding layer 39 is formed by pressure sintering in the first bonding step S01, thereby appropriately suppressing the formation of voids within the second bonding layer 39. This suppresses an increase in the thermal resistance of the second bonding layer 39, thereby suppressing a decrease in the amount of heat transferred from the chip 40 to the heat sink 31. Consequently, the temperature of the chip 40 can be suppressed from becoming excessively high, thereby improving the operational stability of the semiconductor device 10.

[0063] According to this embodiment, the thermally conductive member 38 is made of copper, and the circuit substrate 33 includes an insulating substrate 34 having insulating properties, and a copper conductor portion 36 bonded to the surface of the insulating substrate 34 facing the back surface 34b, i.e., the second side (-Z side). The first bonding layer 37 is a sintered copper body, and the conductor portion 36 and the thermally conductive member 38 are bonded via the first bonding layer 37. Therefore, since the thermally conductive member 38, the conductor portion 36, and the first bonding layer 37 are made of the same material, even when the first bonding layer 37 is formed by non-pressure sintering, the bonding strength between the first bonding layer 37 and the thermally conductive member 38 and the conductor portion 36 can be improved. Thus, even when the first bonding layer 37 is formed by non-pressure sintering, the bonding strength between the thermally conductive member 38 and the circuit substrate 33 can be improved. Consequently, the amount of heat transferred from the chip 40 to the heat sink 31 can be increased, thereby preventing the chip 40 from overheating.

[0064] (Second embodiment)

[0065] Figure 7 This is a schematic cross-sectional view of a portion of a semiconductor device 210 according to this embodiment. In the semiconductor device 210 according to this embodiment, the first bonding layer 237 is formed by pressure sintering. In the following description, components identical to those in the first embodiment are denoted by the same reference numerals, and their descriptions are omitted.

[0066] The main body 232 of this embodiment includes a circuit substrate 33, a first bonding layer 237, a heat conductive component 38, a second bonding layer 39, a chip 40, and leads 41. The first bonding layer 237 bonds the circuit substrate 33 to the heat conductive component 38. More specifically, the first bonding layer 237 bonds the conductor portion 36 to the heat conductive component 38. The first bonding layer 237 is a sintered copper body. In this embodiment, the thickness of the first bonding layer 237 is approximately 50 μm. The remaining configuration of the semiconductor device 210 is the same as that of the semiconductor device 10 of the first embodiment described above.

[0067] Next, a method for manufacturing the semiconductor device 210 of this embodiment will be described. Figure 8 As shown, the manufacturing method of the semiconductor device 210 of this embodiment includes: a first bonding process S21, forming a second bonding layer 39 by pressure sintering, and bonding the heat-conducting component 38 to the heat dissipation component 31 via the second bonding layer 39; a second bonding process S22, forming a first bonding layer 237 by pressure sintering, and bonding the circuit substrate 33 to the heat-conducting component 38 via the first bonding layer 237; an installation process S23, installing the chip 40 on the first surface 33a; a wiring process S24, bonding the terminal portion 50 to the circuit substrate 33; and a filling process S25, filling the interior of the peripheral wall portion 21 with a sealant 60.

[0068] In the first bonding step S21, the second bonding layer 39 is formed by pressure sintering, and the heat conducting member 38 and the heat dissipating member 31 are bonded via the second bonding layer 39. The operations and the like of the first bonding step S21 are the same as those of the first bonding step S01 of the first embodiment described above.

[0069] In the second bonding step S22, the first bonding layer 237 is formed by pressure sintering, and the circuit substrate 33 and the heat conducting member 38 are bonded via the first bonding layer 237. Figure 9 As shown, in the second bonding step S22, the operator first applies the above-mentioned copper paste to at least one of the heat-conducting component 38 and the conductor portion 36. Furthermore, in this embodiment, the first surface 33a of the circuit substrate 33 in the second bonding step S22 does not have the chip 40 mounted thereon, and the leads 41 are not bonded. Next, the operator brings the surface 38a of the heat-conducting component 38 into contact with the back surface of the conductor portion 36, i.e., the second surface 33b of the circuit substrate 33, via the copper paste. Next, the operator applies pressure to the circuit substrate 33 from above to pressurize the copper paste, thereby performing a pressure sintering process to sinter the copper paste. When the copper particles contained in the copper paste bond to each other to form a copper sintered body, i.e., the first bonding layer 237, the circuit substrate 33 and the heat-conducting component 38 are bonded via the first bonding layer 237. When the first bonding layer 237 is formed, the second bonding step S22 is completed.

[0070] In the mounting step S23, the chip 40 is mounted on the first surface 33a. Figure 8 As shown, the installation process S23 is a process performed after the second bonding process S22. Figure 10 As shown, the operator first mounts the chip 40 on the first surface 33a of the circuit substrate 33. Next, the operator bonds one end of the lead 41 to each of the plurality of electrodes (not shown) on the chip 40. Next, the operator bonds the other end of each lead 41 to the circuit portion 35. Thus, each lead 41 electrically connects the chip 40 to the circuit substrate 33. When each lead 41 is bonded to the circuit portion 35, the mounting step S23 is complete.

[0071] In the wiring step S24, the terminal portion 50 is bonded to the circuit board 33. The operations and other aspects of the wiring step S24 are the same as those of the wiring step S03 in the first embodiment described above. Alternatively, the mounting step S23 may be performed after the wiring step S24. In the filling step S25, the sealing material 60 is filled into the interior of the peripheral wall portion 21. The operations and other aspects of the filling step S25 are the same as those of the filling step S04 in the first embodiment described above. Upon completion of the filling step S25, the semiconductor device 210 is manufactured.

[0072] According to this embodiment, the method for manufacturing the semiconductor device 210 includes: a first bonding step S21, in which a second bonding layer 39 is formed by pressure sintering, and the heat conductive component 38 is bonded to the heat dissipating component 31 via the second bonding layer 39; a second bonding step S22, in which a first bonding layer 237 is formed by pressure sintering, and the circuit board 33 is bonded to the heat conductive component 38 via the first bonding layer 237; and a mounting step S23, in which, after the second bonding step S22, the chip 40 is mounted on the first surface 33a. Therefore, since the chip 40 is not mounted on the first surface 33a in the second bonding step S22, the first surface 33a can be easily pressurized downward. Thus, the first bonding layer 237 can be formed by pressure sintering. Furthermore, since the first bonding layer 237 is formed by pressure sintering, the contact area between the first bonding layer 237 and the second surface 33b and the surface 38a of the heat conductive component 38 can be increased compared to a case where the first bonding layer 237 is formed without pressure sintering. This reduces the thermal resistance between the circuit board 33 and the heat conducting member 38. Therefore, the amount of heat transferred from the chip 40 to the heat dissipating member 31 can be increased, and thus the temperature of the chip 40 can be more appropriately suppressed from becoming excessively high.

[0073] Furthermore, in this embodiment, since the first bonding layer 237 is formed by pressure sintering as described above, the formation of voids within the first bonding layer 237 can be suppressed compared to the case where the first bonding layer 237 is formed by non-pressure sintering. This reduces the thermal resistance of the first bonding layer 237, further increasing the amount of heat transferred from the chip 40 to the heat sink 31. Consequently, the temperature of the chip 40 can be more appropriately suppressed from becoming excessively high.

[0074] (Third embodiment)

[0075] Figure 11 This is a schematic cross-sectional view showing a portion of a semiconductor device 310 according to this embodiment. In the semiconductor device 310 according to this embodiment, the outer edge of a heat conducting member 338 surrounds the outer edge of a circuit board 33. In the following description, components identical to those in the first embodiment are denoted by the same reference numerals, and their descriptions are omitted.

[0076] The main body 332 of this embodiment includes a circuit substrate 33, a first bonding layer 37, a heat-conducting component 338, a second bonding layer 339, a chip 40, and a lead 41. The heat-conducting component 338 is in the shape of a plate extending in a direction perpendicular to the vertical direction. The heat-conducting component 338 is bonded to the second surface 33b of the circuit substrate 33 via the first bonding layer 37. The heat-conducting component 338 is bonded to the conductor portion 36 via the first bonding layer 37. When viewed from the first side (+Z side), the outer edge of the heat-conducting component 338 surrounds the outer edges of the circuit substrate 33 and the first bonding layer 37. The other configurations of the heat-conducting component 338 are the same as those of the heat-conducting component 38 of the first embodiment described above.

[0077] The second bonding layer 339 bonds the heat conducting component 338 to the heat dissipating component 31. The second bonding layer 339 is a sintered body made of silver. When viewed from the first side (+Z side), the outer edge of the second bonding layer 339 overlaps with the outer edge of the heat conducting component 338. When viewed from the first side, the outer edge of the second bonding layer 339 surrounds the outer edge of the circuit substrate 33. The other configurations of the second bonding layer 339 are the same as those of the second bonding layer 39 in the first embodiment described above. The other configurations of the semiconductor device 310 are the same as those of the semiconductor device 10 in the first embodiment described above.

[0078] Next, a heat transfer path for dissipating heat generated in the chip 40 to the outside of the semiconductor device 310 via the circuit substrate 33, the heat conducting member 338, and the heat dissipating member 31 will be described. Figure 11 In the figure, the heat transfer path is schematically indicated by arrow H. As described above, the heat transferred from the circuit substrate 33 to the heat-conducting component 338 is transferred downward while diffusing in the heat-conducting component 338 in a direction perpendicular to the vertical direction, and is transferred to the heat dissipating component 31 via the second bonding layer 39. In this embodiment, as described above, the outer edge of the heat-conducting component 338 surrounds the outer edge of the circuit substrate 33, so it is easy to expand the area of ​​the heat-conducting component 338 in the direction perpendicular to the vertical direction. Therefore, the area A21 of the surface 31a of the heat dissipating component 31 where heat is transferred from the heat-conducting component 338 can be made larger than Figure 2 In the first embodiment shown, the area A11 of the surface 31a of the heat dissipating member 31 through which heat is transferred from the heat conducting member 38 is large. Therefore, in this embodiment, the area A21 through which heat generated by the chip 40 is transferred to the heat dissipating member 31 can be increased.

[0079] According to the present embodiment, the outer edge of the heat conductive member 338 encloses the outer edge of the circuit board 33 when viewed from the first side (+Z side). Therefore, compared to a configuration in which the outer edge of the heat conductive member 338 overlaps the outer edge of the circuit board 33 or is positioned inward of the outer edge of the circuit board 33 when viewed from the first side, the area A21 through which heat is transferred from the heat conductive member 338 can be increased in the surface 31a of the heat dissipating member 31 as described above. Thus, the amount of heat transferred from the heat conductive member 338 to the heat dissipating member 31 can be increased. Therefore, the amount of heat transferred from the chip 40 to the heat dissipating member 31 can be increased, and thus the temperature of the chip 40 can be more appropriately suppressed from becoming excessively high.

[0080] (Fourth Embodiment)

[0081] Figure 12 is a schematic cross-sectional view that shows a portion of the semiconductor device 410 of the present embodiment. In the semiconductor device 410 of the present embodiment, a recessed portion 438c recessed toward the second side (-Z side) is provided on a surface 438a of the heat conductive member 438, i.e., a surface facing the first side (+Z side). In the following description, the same reference numerals are assigned to the same configuration elements as those of the third embodiment described above, and the description thereof is omitted.

[0082] The main body portion 432 of the present embodiment includes the circuit board 33, the first bonding layer 37, the heat conductive member 438, the second bonding layer 339, the chip 40, and the lead 41. The heat conductive member 438 is a plate shape that extends in a direction orthogonal to the vertical direction. The heat conductive member 438 is bonded to the second surface 33b of the circuit board 33 via the first bonding layer 37. The heat conductive member 438 is bonded to the conductor portion 36 via the first bonding layer 37. The outer edge of the heat conductive member 438 encloses the outer edges of the circuit board 33 and the first bonding layer 37 when viewed from the first side (+Z side). The heat conductive member 438 has a recessed portion 438c and a peripheral edge portion 438g. An insulating layer 438h is provided on the heat conductive member 438.

[0083] The recessed portion 438c is a hole recessed toward the second side (-Z side) from the surface 438a of the heat conductive member 438, i.e., a surface facing the first side (+Z side). That is, the recessed portion 438c is provided on the surface 438a of the heat conductive member 438. As shown in Figure 13 As shown in a view from the vertical direction, the recessed portion 438c is a substantially rectangular hole. As shown in Figure 12 The recessed portion 438c has a first inner side surface 438d and a second inner side surface 438e.

[0084] The first inner side surface 438d is the surface of the inner side surface of the recess 438c that faces the first side (+Z side). The circuit substrate 33 is bonded to the first inner side surface 438d via the first bonding layer 37. The second surface 33b of the circuit substrate 33 is positioned within the recess 438c. The lower portion of the conductor portion 36 is positioned within the recess 438c. Furthermore, as described above, the first bonding layer 37 is a sintered body formed by non-pressure sintering.

[0085] The second inner side surface 438e is a surface of the inner side surface of the recess 438c that faces a direction perpendicular to the vertical direction. The second inner side surface 438e surrounds the conductor portion 36. The second inner side surface 438e faces the conductor portion 36 in a direction perpendicular to the vertical direction.

[0086] The peripheral edge portion 438g is a portion of the surface 438a of the heat conducting member 438, that is, the surface facing the first side (+Z side), which surrounds the recessed portion 438c when viewed from the first side. Figure 13 As shown in FIG. 4 , the outer edge of the peripheral portion 438g surrounds the outer edge of the circuit substrate 33. Figure 12 As shown, the peripheral edge portion 438g is located closer to the first side than the second surface 33b in the vertical direction. Therefore, the creepage distance between the circuit portion 35 and the peripheral edge portion 438g is shorter than the creepage distance between the circuit portion 35 and the conductor portion 36.

[0087] An insulating layer 438h is provided on the peripheral portion 438g. The insulating layer 438h has insulating properties. In this embodiment, the insulating layer 438h is formed of an insulating resin such as polyimide (PI) or polytetrafluoroethylene (PTFE). The remaining configuration of the thermal conductive member 438 is the same as that of the thermal conductive member 338 in the third embodiment. The remaining configuration of the semiconductor device 410 is the same as that of the semiconductor device 310 in the third embodiment.

[0088] According to this embodiment, a recess 438c, recessed toward the second side (-Z side), is provided on the surface 438a of the thermally conductive member 438, the surface facing the first side (+Z side). The second surface 33b of the circuit substrate 33 is positioned within the recess 438c. If the position of the circuit substrate 33 relative to the thermally conductive member 438 is significantly shifted in a direction perpendicular to the vertical direction, the chip 40 and leads 41 may interfere with the terminal portion 50. In contrast, in this embodiment, the lower portion of the conductor portion 36 of the circuit substrate 33 is positioned within the recess 438c. Therefore, the second inner surface 438e restricts the position of the circuit substrate 33 relative to the thermally conductive member 438 in a direction perpendicular to the vertical direction. Consequently, significant shifts in the position of the circuit substrate 33 relative to the thermally conductive member 438 in a direction perpendicular to the vertical direction can be suppressed, thereby preventing interference between the chip 40 and leads 41 and the terminal portion 50. This improves the operational stability of the semiconductor device 410.

[0089] Furthermore, in the present embodiment, in the second bonding step S02, the first bonding layer 37 is formed by non-pressure sintering. Therefore, in the second bonding step S02, no force pressing the heat conducting component 38 is applied to the circuit substrate 33, and therefore the position of the circuit substrate 33 relative to the heat conducting component 38 in the direction perpendicular to the vertical direction is easily significantly offset. In contrast, in the present embodiment, as described above, the position of the circuit substrate 33 relative to the heat conducting component 438 in the direction perpendicular to the vertical direction can be limited by the second inner side surface 438e. Therefore, in the direction perpendicular to the vertical direction, the position of the circuit substrate 33 relative to the heat conducting component 38 can be suppressed from significantly offsetting. Therefore, even if the first bonding layer 37 is formed by non-pressure sintering, interference between the chip 40 and the lead 41 and the terminal portion 50 can be suppressed. Therefore, the stability of the operation of the semiconductor device 410 can be improved.

[0090] According to this embodiment, an insulating layer 438h is provided on the peripheral edge portion 438g of the surface of the thermally conductive member 438 facing the first side (+Z side), surrounding the recessed portion 438c when viewed from the first side. Therefore, as described above, even if the creepage distance between the circuit portion 35 and the peripheral edge portion 438g is short, the insulating layer 438h can insulate the circuit portion 35 and the peripheral edge portion 438g from each other. Consequently, the operational stability of the semiconductor device 410 can be further improved.

[0091] According to at least one embodiment described above, by including the first bonding layer and the second bonding layer as sintered bodies, it is possible to provide a semiconductor device capable of suppressing excessive temperature increases in a chip.

[0092] The semiconductor device and the method for manufacturing the semiconductor device according to the embodiment include the following additional aspects.

[0093] (Note 1)

[0094] A semiconductor device comprising:

[0095] a circuit substrate having a first surface facing a first side and a second surface facing a second side opposite to the first side;

[0096] a chip mounted on the first surface; a heat conducting component bonded to the second surface via a first bonding layer; and

[0097] a heat dissipation component bonded to the surface of the heat conductive component facing the second side via a second bonding layer;

[0098] The first bonding layer and the second bonding layer are each a sintered body.

[0099] (Note 2)

[0100] The semiconductor device according to Supplementary Note 1, wherein

[0101] The outer surface of the heat dissipation component is covered with a nickel protective film.

[0102] The second bonding layer is a sintered body made of silver.

[0103] (Note 3)

[0104] The semiconductor device according to Supplementary Note 1 or 2, wherein

[0105] The heat conducting component is made of copper.

[0106] The first bonding layer is a sintered body made of copper.

[0107] (Note 4)

[0108] The semiconductor device according to Supplementary Note 3, wherein:

[0109] The circuit board includes an insulating substrate having insulating properties and a copper conductor portion provided on a surface of the insulating substrate facing the second side.

[0110] The conductor portion and the thermally conductive member are bonded via the first bonding layer.

[0111] (Note 5)

[0112] The semiconductor device according to any one of Supplementary Notes 1 to 4, wherein:

[0113] The thermally conductive component is bonded to a conductor portion provided on the circuit substrate via the first bonding layer.

[0114] When viewed from the first side, the outer edge of the heat conducting member overlaps with the outer edge of the conductor portion, or the outer edge of the heat conducting member surrounds the outer edge of the conductor portion.

[0115] (Note 6)

[0116] The semiconductor device according to any one of Supplementary Notes 1 to 5, wherein:

[0117] When viewed from the first side, an outer edge of the thermally conductive member surrounds an outer edge of the circuit substrate.

[0118] (Note 7)

[0119] The semiconductor device according to any one of Supplementary Notes 1 to 6, wherein:

[0120] A recessed portion recessed toward the second side is provided on the surface of the heat conducting component facing the first side.

[0121] The second surface of the circuit substrate is disposed inside the recess.

[0122] (Note 8)

[0123] The semiconductor device according to Supplementary Note 7, wherein

[0124] An insulating layer having insulating properties is provided on a peripheral portion of the surface of the heat conducting member facing the first side, surrounding the recess when viewed from the first side.

[0125] (Note 9)

[0126] The semiconductor device according to any one of Supplementary Notes 1 to 8, comprising:

[0127] a housing for accommodating the circuit substrate and the heat-conducting component therein;

[0128] a terminal portion, held in the housing and connected to the circuit substrate;

[0129] Leads connecting the chip and the circuit substrate; and

[0130] The sealing member covers the circuit substrate, the chip, and the leads, respectively, and has insulating properties.

[0131] (Note 10)

[0132] A method for manufacturing a semiconductor device, wherein the semiconductor device comprises:

[0133] a circuit substrate having a first surface facing a first side and a second surface facing a second side opposite to the first side;

[0134] a chip mounted on the first surface;

[0135] a heat conducting member bonded to the second surface via a first bonding layer; and

[0136] a heat dissipation component bonded to the surface of the heat conductive component facing the second side via a second bonding layer;

[0137] The method for manufacturing a semiconductor device comprises:

[0138] a first bonding step of forming the second bonding layer by pressure sintering, and bonding the heat conducting component and the heat dissipating component via the second bonding layer; and

[0139] In the second bonding step, the first bonding layer is formed by non-pressure sintering, and the circuit substrate on which the chip is mounted is bonded to the thermally conductive member via the first bonding layer.

[0140] (Note 11)

[0141] The method for manufacturing a semiconductor device according to Supplementary Note 10, wherein:

[0142] The heat conducting component is made of copper.

[0143] The circuit board includes an insulating substrate having insulating properties and a copper conductor portion provided on a surface of the insulating substrate facing the second side.

[0144] The first bonding layer is a sintered body made of copper,

[0145] The conductor portion is bonded to the thermally conductive member via the first bonding layer.

[0146] (Note 12)

[0147] A method for manufacturing a semiconductor device, wherein the semiconductor device comprises:

[0148] a circuit substrate having a first surface facing a first side and a second surface facing a second side opposite to the first side;

[0149] a chip mounted on the first surface;

[0150] a heat conducting member bonded to the second surface via a first bonding layer; and

[0151] a heat dissipation component bonded to the surface of the heat conductive component facing the second side via a second bonding layer;

[0152] The method for manufacturing a semiconductor device comprises:

[0153] a first bonding step of forming the second bonding layer by pressure sintering, and bonding the heat conducting component to the heat dissipating component via the second bonding layer;

[0154] a second bonding step of forming the first bonding layer by pressure sintering and bonding the circuit substrate and the heat conducting member via the first bonding layer; and

[0155] The mounting step is to mount the chip on the first surface after the second bonding step.

[0156] While several embodiments of the present invention have been described, these embodiments are provided as examples and are not intended to limit the scope of the invention. These embodiments may be implemented in various other ways, and various omissions, substitutions, and modifications may be made without departing from the spirit of the invention. These embodiments and their variations are intended to be within the scope and spirit of the invention, and are also intended to be within the scope of the invention set forth in the claims and their equivalents.

Claims

1. A semiconductor device, wherein: have: a circuit substrate having a first surface facing a first side and a second surface facing a second side opposite to the first side; a chip mounted on the first surface; a heat conducting component bonded to the second surface via a first bonding layer; as well as a heat dissipation component bonded to the surface of the heat conductive component facing the second side via a second bonding layer; The first bonding layer and the second bonding layer are each a sintered body.

2. The semiconductor device according to claim 1, wherein The outer surface of the heat dissipation component is covered with a nickel protective film. The second bonding layer is a sintered body made of silver.

3. The semiconductor device according to claim 1 or 2, wherein The heat conducting component is made of copper. The first bonding layer is a sintered body made of copper.

4. The semiconductor device according to claim 3, wherein The circuit substrate has: an insulating substrate having insulating properties; and A copper conductor portion is provided on the surface of the insulating substrate facing the second side. The conductor portion and the thermally conductive member are bonded via the first bonding layer.

5. The semiconductor device according to claim 1, wherein The thermally conductive component is bonded to a conductor portion provided on the circuit substrate via the first bonding layer. When viewed from the first side, the outer edge of the heat conducting member overlaps with the outer edge of the conductor portion, or the outer edge of the heat conducting member surrounds the outer edge of the conductor portion. The semiconductor device according to claim 1 , wherein: When viewed from the first side, an outer edge of the thermally conductive member surrounds an outer edge of the circuit substrate.

7. The semiconductor device according to claim 1, wherein A recessed portion recessed toward the second side is provided on the surface of the heat conducting component facing the first side. The second surface of the circuit substrate is disposed inside the recess.

8. The semiconductor device according to claim 7, wherein An insulating layer having insulating properties is provided on a peripheral portion of a surface of the heat conducting member facing the first side, and the peripheral portion surrounds the recessed portion when viewed from the first side.

9. The semiconductor device according to claim 1, wherein have: a housing for accommodating the circuit substrate and the heat-conducting component respectively; a terminal portion, held in the housing and connected to the circuit substrate; Leads, connecting the chip to the circuit substrate; as well as The sealing member covers the circuit substrate, the chip, and the leads, respectively, and has insulating properties.

10. A method for manufacturing a semiconductor device, the semiconductor device comprising: a circuit substrate having a first surface facing a first side and a second surface facing a second side opposite to the first side; a chip mounted on the first surface; a heat conducting component bonded to the second surface via a first bonding layer; and a heat dissipating component bonded to the surface of the heat conducting component facing the second side via a second bonding layer. in, The method for manufacturing a semiconductor device comprises: a first bonding step of forming the second bonding layer by pressure sintering, and bonding the heat conducting component to the heat dissipating component via the second bonding layer; as well as In the second bonding step, the first bonding layer is formed by non-pressure sintering, and the circuit substrate on which the chip is mounted is bonded to the thermally conductive member via the first bonding layer.

11. The method for manufacturing a semiconductor device according to claim 10, wherein: The heat conducting component is made of copper. The circuit substrate has: an insulating substrate having insulating properties; and A copper conductor portion is provided on the surface of the insulating substrate facing the second side. The first bonding layer is a sintered body made of copper, The conductor portion is bonded to the thermally conductive member via the first bonding layer.

12. A method for manufacturing a semiconductor device, the semiconductor device comprising: a circuit substrate having a first surface facing a first side and a second surface facing a second side opposite to the first side; a chip mounted on the first surface; a heat conducting component bonded to the second surface via a first bonding layer; and a heat dissipating component bonded to the surface of the heat conducting component facing the second side via a second bonding layer. The method for manufacturing the semiconductor device includes: a first bonding step of forming the second bonding layer by pressure sintering, and bonding the heat conducting component to the heat dissipating component via the second bonding layer; a second bonding step of forming the first bonding layer by pressure sintering and bonding the circuit substrate and the heat conducting member via the first bonding layer; and The mounting step is to mount the chip on the first surface after the second bonding step.

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