High-power MOSFET / IGBT drive circuit

Abstract

The invention discloses a high-power MOSFET / IGBT (Metal-Oxide-Semiconductor Field Effect Transistor / Insulated Gate Bipolar Translator) driving circuit, which relates to the technical field of high-power semiconductor driving and comprises an isolation driving transformer, an MOSFET power amplification circuit positioned on the primary side of the isolation driving transformer and a magnetic core reset circuit, the rectifying circuit, the blocking circuit, the acceleration turn-off circuit, the positive and negative voltage clamping circuit and the driven MOSFET / IGBT are located on the secondary side of the isolation driving transformer. The MOSFET power amplification circuit is used for signal amplification of the driving signal; the magnetic core reset circuit is used for shaping the output waveform of the output end of the MOSFET power amplification circuit and reducing the voltage spike of the primary side of the isolation drive transformer; the rectifying circuit is used for rectifying the driving signal; the acceleration turn-off circuit is used for accelerating turn-off of the driven MOSFET / IGBT; the positive and negative voltage clamping circuit is used for forming positive and negative voltage clamping. Only a primary-side single power supply is needed for power supply, the driving circuit has the advantages of being simple in power supply structure, steep in waveform and high in switching speed, and the driven MOSFET / IGBT can work stably and is small in switching loss.

Description

Technical Field

[0001] The present invention relates to the technical field of high-power semiconductor driving, and in particular to a high-power MOSFET / IGBT driving circuit. Background Art

[0002] With the continuous advancement of semiconductor technology, high-power semiconductor devices such as MOSFETs and IGBTs are increasingly being used in high-power power supplies and high-power motor drives. The performance of high-power MOSFET / IGBT drive circuits largely determines their efficiency and stability.

[0003] High-power MOSFET / IGBT driver circuits are core circuits used to control the switching state of MOSFETs / IGBTs. They achieve efficient power conversion through voltage or current signal regulation. Common MOSFET / IGBT driver circuits in existing technologies suffer from three drawbacks: First, they require multiple sets of isolated positive and negative power supplies; second, they lack negative voltage shutdown capabilities; and third, they have a slow shutdown speed, resulting in tailing of the MOSFET / IGBT during shutdown.

[0004] In order to solve the above problems, we need a high-power MOSFET / IGBT drive circuit. Summary of the Invention

[0005] The present invention provides a high-power MOSFET / IGBT drive circuit, which solves the problems of complex power supply design, lack of negative voltage shutdown and slow shutdown speed in the prior art.

[0006] In order to achieve the above object, the present invention adopts the following technical solutions: In a first aspect, the present invention provides a high-power MOSFET / IGBT drive circuit, comprising an isolation drive transformer, a MOSFET power amplifier circuit and a core reset circuit located on the primary side of the isolation drive transformer, and a rectifier circuit, a DC blocking circuit, an accelerated shutdown circuit, a positive and negative voltage clamping circuit, and a driven MOSFET / IGBT located on the secondary side of the isolation drive transformer; The input end of the MOSFET power amplifier circuit is connected to the driving signal, and the output end is connected to the primary side of the isolation drive transformer for signal amplification of the driving signal; The magnetic core reset circuit is externally connected to an input power supply and is connected to the input and output ends of the MOSFET power amplifier circuit and the primary side of the isolation drive transformer, and is used to shape the output waveform of the output end of the MOSFET power amplifier circuit and reduce the voltage spike on the primary side of the isolation drive transformer; The rectifier circuit is used to rectify the drive signal output from the secondary side of the isolation drive transformer; The accelerated shutdown circuit is connected to the secondary side of the isolation drive transformer, the input and output ends of the rectifier circuit, and the input end of the DC blocking circuit, and is used to accelerate the shutdown of the driven MOSFET / IGBT; The positive and negative voltage clamping circuit is connected between the output end of the DC blocking circuit and the secondary side of the isolation drive transformer to form positive and negative voltage clamping; The driven MOSFET / IGBT is connected to the positive and negative voltage clamping circuits.

[0007] In a possible implementation, the primary side of the isolation drive transformer includes a first input terminal and a second input terminal, and the secondary side of the isolation drive transformer includes a first output terminal and a second output terminal; The MOSFET power amplifier circuit includes a power amplifier field-effect transistor, the gate of the power amplifier field-effect transistor is the input end of the MOSFET power amplifier circuit, and is used to receive the drive signal; the drain of the power amplifier field-effect transistor is the output end of the MOSFET power amplifier circuit, and is connected to the second input end; the source of the power amplifier field-effect transistor is grounded.

[0008] In a possible implementation, the magnetic core reset circuit includes a first capacitor, a first resistor, a second resistor, a first diode, a second diode, and a first PNP transistor; One end of the first capacitor is connected to the gate of the power amplifier field-effect transistor, and the other end of the first capacitor is connected to one end of the first resistor and one end of the second resistor; the other end of the first resistor is connected to the anode of the first diode, and the other end of the second resistor is connected to the base of the first PNP transistor; the cathode of the first diode is connected to the emitter of the first PNP transistor, the first input terminal, and the external input power supply; the collector of the first PNP transistor is connected to the cathode of the second diode; and the anode of the second diode is connected to the second input terminal and the drain of the power amplifier field-effect transistor; The second diode is a voltage stabilizing diode.

[0009] In one possible implementation, the rectifier circuit includes a third diode, the anode of the third diode is the input end of the rectifier circuit, connected to the first output end and the accelerated shutdown circuit, and the cathode of the third diode is the output end of the rectifier circuit, connected to the accelerated shutdown circuit and the input end of the DC isolation circuit.

[0010] In a possible implementation, the accelerated shutdown circuit includes a fourth diode, a second PNP transistor, a third resistor, a fourth resistor, and a second capacitor; The base of the second PNP transistor is connected to the cathode of the fourth diode, one end of the third resistor, one end of the second capacitor, and one end of the fourth resistor; the emitter of the second PNP transistor is connected to the cathode of the third diode and the input end of the DC blocking circuit; and the collector of the second PNP transistor is connected to the other end of the fourth resistor and the second output end; The anode of the fourth diode, the other end of the third resistor, and the other end of the second capacitor are connected to the anode of the third diode and the first output end.

[0011] In a possible implementation, the DC blocking circuit includes a fifth resistor and a third capacitor connected in parallel.

[0012] In one possible implementation, the positive and negative voltage clamping circuit includes a fifth diode and a sixth diode; the cathode of the fifth diode is connected to the output end of the DC blocking circuit, the anode of the fifth diode is connected to the anode of the sixth diode, and the cathode of the sixth diode is connected to the second output end; The fifth diode is a voltage stabilizing diode.

[0013] In a possible implementation, a sixth resistor and a seventh resistor are further included; The gate of the driven MOSFET / IGBT is connected to the cathode of the fifth diode through the sixth resistor, the gate of the driven MOSFET / IGBT is also connected to the second output terminal through the seventh resistor, and the source of the driven MOSFET / IGBT is connected to the second output terminal.

[0014] In a possible implementation, a current limiting resistor is further included, and the driving signal is input to the gate of the power amplifier field effect transistor through the current limiting resistor.

[0015] In a possible implementation, an eighth resistor is further included, and the gate of the power amplifier field effect transistor is grounded through the eighth resistor.

[0016] The high-power MOSFET / IGBT drive circuit provided in an embodiment of the present invention comprises a MOSFET power amplifier circuit, a magnetic core reset circuit, an isolation drive transformer, a rectifier circuit, a DC blocking circuit, an accelerated shutdown circuit, positive and negative voltage clamping circuits, and a driven MOSFET / IGBT. This circuit only requires a single primary-side power supply, and the drive voltage has the function of turning on with a positive voltage and turning off with a negative voltage. Therefore, this circuit has the characteristics of a simple power supply structure, a steep waveform, and a fast switching speed. The driven MOSFET / IGBT can operate stably with low switching losses. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 A circuit diagram of a high-power MOSFET / IGBT drive circuit provided by an embodiment of the present invention.

[0018] Reference numerals and descriptions: 1. Isolation drive transformer; 2. MOSFET power amplifier circuit; 3. Core reset circuit; 4. Rectifier circuit; 5. DC blocking circuit; 6. Accelerated shutdown circuit; 7. Positive and negative voltage clamping circuit; 8. Driven MOSFET / IGBT. DETAILED DESCRIPTION

[0019] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0020] In the following, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "multiple" means two or more. In addition, the use of "based on" or "according to" means openness and inclusiveness, because the process, steps, calculations or other actions "based on" or "according to" one or more of the conditions or values ​​may be based on additional conditions or values ​​beyond the stated in practice.

[0021] In order to solve the problems of complex power supply design, lack of negative voltage shutdown, and slow shutdown speed in the prior art, an embodiment of the present invention provides a high-power MOSFET / IGBT drive circuit.

[0022] like Figure 1As shown, a high-power MOSFET / IGBT drive circuit is characterized by including an isolation drive transformer 1, a MOSFET power amplifier circuit 2 and a core reset circuit 3 located on the primary side of the isolation drive transformer 1, and a rectifier circuit 4, a DC blocking circuit 5, an accelerated shutdown circuit 6, a positive and negative voltage clamping circuit 7, and a driven MOSFET / IGBT 8 located on the secondary side of the isolation drive transformer 1.

[0023] The input end of the MOSFET power amplifier circuit 2 is connected to the driving signal, and the output end is connected to the primary side of the isolation driving transformer 1 for signal amplification of the driving signal.

[0024] Among them, the MOSFET power amplifier circuit 2 generally uses a power MOSFET device as a core component. Its working principle is to use the gate control of the power MOSFET device to form a conductive channel when the gate voltage exceeds the threshold. The drain current is modulated by the gate voltage, converting the small signal voltage of the driving signal into a high power output to drive the load.

[0025] The core reset circuit 3 is connected to an external input power supply and is connected to the input and output ends of the MOSFET power amplifier circuit 2 and the primary side of the isolation drive transformer 1. It is used to shape the output waveform of the output end of the MOSFET power amplifier circuit 2 and reduce the voltage spike on the primary side of the isolation drive transformer 1.

[0026] The core reset circuit 3 achieves reset by dissipating residual energy in the core. Installed on the primary side of the isolation drive transformer 1, it utilizes current changes in the primary winding to generate a reverse electromotive force (EMF). This residual energy is fed back to the input or consumed in components such as the Zener diode, preventing core saturation. The core reset circuit 3, located on the primary side of the isolation drive transformer 1, typically consists of a Zener diode, a diode, and a primary winding. Using a primary-side reset circuit reduces the number of windings and reduces transformer design complexity. When the switch is turned off, the leakage inductance of the power MOSFET device in the primary-side MOSFET power amplifier circuit 2 generates a voltage spike. Connecting an RC snubber circuit to the primary side effectively suppresses this voltage spike and protects the switch. The Zener diode's breakdown voltage must be higher than the peak input voltage, and the diode's withstand voltage must be higher than the sum of the input voltage and the core reset voltage. The Zener diode and diode must be connected in parallel with the primary winding to ensure efficient energy release.

[0027] The rectifier circuit 4 is used to rectify the driving signal output from the secondary side of the isolation drive transformer 1 .

[0028] The core component of the rectifier circuit 4 is a diode. The rectifier circuit 4 utilizes the unidirectional conductive property of the diode to convert the AC power in the driving signal outputted from the secondary side of the isolation driving transformer 1 into DC power.

[0029] The accelerated shutdown circuit 6 is connected to the secondary side of the isolation drive transformer 1 , the input and output ends of the rectifier circuit 4 , and the input end of the DC blocking circuit 5 , and is used to accelerate the shutdown of the driven MOSFET / IGBT 8 .

[0030] Among them, the core components of the accelerated shutdown circuit 6 include a PNP / NPN transistor, a fast recovery diode and a gate resistor; the PNP / NPN transistor is used to actively absorb or inject gate charge to achieve fast discharge / charging; the fast recovery diode is used to provide a low-impedance circuit to bypass the gate resistor to accelerate discharge; the gate resistor needs to optimize its resistance value to balance ringing suppression and switching speed.

[0031] Accelerated shutdown circuit 6 has the functions of rapid charge discharge, reduced turn-off losses, and prevent malfunction. Rapid charge discharge refers to establishing a low-impedance path through a transistor or diode, shortening the gate-source capacitance discharge time; reduced turn-off losses refers to reducing switching transition time and improving system efficiency; and prevent malfunction refers to preventing incomplete MOSFET shutdown due to residual gate charge.

[0032] The positive and negative voltage clamping circuit 7 is connected between the output end of the DC blocking circuit 5 and the secondary side of the isolation drive transformer 1 to form positive and negative voltage clamping.

[0033] The core component of the positive and negative voltage clamping circuit 7 is a diode, which is used to achieve unidirectional conduction characteristics and determine the clamping direction (positive / negative) and level.

[0034] The driven MOSFET / IGBT 8 is connected to the positive and negative voltage clamp circuit 7 .

[0035] like Figure 1 As shown, in the embodiment of the present invention, the primary side of the isolation drive transformer 1 includes a first input terminal and a second input terminal, and the secondary side of the isolation drive transformer 1 includes a first output terminal and a second output terminal.

[0036] The first input terminal and the first output terminal are terminals with the same name.

[0037] The MOSFET power amplifier circuit 2 uses a single power amplifier field effect transistor Q2.

[0038] The gate of the power amplifier field effect transistor Q2 is the input end of the MOSFET power amplifier circuit 2, which is used to receive the drive signal; the drain of the power amplifier field effect transistor Q2 is the output end of the MOSFET power amplifier circuit 2, which is connected to the second input end; the source of the power amplifier field effect transistor Q2 is grounded.

[0039] The driving signal is a PWM signal.

[0040] In the embodiment of the present invention, the magnetic core reset circuit 3 includes a first capacitor C1 , a first resistor R2 , a second resistor R3 , a first diode D1 , a second diode D2 , and a first PNP transistor Q1 .

[0041] One end of the first capacitor C1 is connected to the gate of the power amplifier field-effect transistor Q2, and the other end of the first capacitor C1 is connected to one end of the first resistor R2 and one end of the second resistor R3; the other end of the first resistor R2 is connected to the anode of the first diode D1, and the other end of the second resistor R3 is connected to the base of the first PNP transistor Q1; the cathode of the first diode D1 is connected to the emitter of the first PNP transistor Q1, the first input terminal, and an external input power supply; the collector of the first PNP transistor Q1 is connected to the cathode of the second diode D2; and the anode of the second diode D2 is connected to the second input terminal and the drain of the power amplifier field-effect transistor Q2.

[0042] The second diode D2 is a voltage stabilizing diode. The input power supply is a single +12V power supply.

[0043] In the embodiment of the present invention, the rectifier circuit 4 uses a single third diode D4.

[0044] The anode of the third diode D4 is the input end of the rectifier circuit 4 , connected to the first output end and the accelerated shutdown circuit 6 ; the cathode of the third diode D4 is the output end of the rectifier circuit 4 , connected to the accelerated shutdown circuit 6 and the input end of the DC isolation circuit 5 .

[0045] In the embodiment of the present invention, the accelerated shutdown circuit 6 includes a fourth diode D3 , a second PNP transistor Q3 , a third resistor R5 , a fourth resistor R6 , and a second capacitor C2 .

[0046] The base of the second PNP transistor Q3 is connected to the cathode of the fourth diode D3, one end of the third resistor R5, one end of the second capacitor C2 and one end of the fourth resistor R6, the emitter of the second PNP transistor Q3 is connected to the cathode of the third diode D4 and the input end of the DC blocking circuit 5, and the collector of the second PNP transistor Q3 is connected to the other end of the fourth resistor R6 and the second output end.

[0047] The anode of the fourth diode D3, the other end of the third resistor R5, and the other end of the second capacitor C2 are connected to the anode of the third diode D4 and the first output end.

[0048] In the embodiment of the present invention, the DC blocking circuit 5 includes a fifth resistor R7 and a third capacitor C3 connected in parallel. One end of the DC blocking circuit 5 is an input end, and the other end is an output end.

[0049] In an embodiment of the present invention, the positive and negative voltage clamping circuit 7 includes a fifth diode D5 and a sixth diode D6; the cathode of the fifth diode D5 is connected to the output end of the DC isolation circuit 5, the anode of the fifth diode D5 is connected to the anode of the sixth diode D6, and the cathode of the sixth diode D6 is connected to the second output end.

[0050] The fifth diode D5 is a voltage stabilizing diode.

[0051] In an embodiment of the present invention, the high-power MOSFET / IGBT drive circuit further includes a sixth resistor R8 and a seventh resistor R9. The gate of the driven MOSFET / IGBT 8 is connected to the cathode of the fifth diode D5 via the sixth resistor R8. The gate of the driven MOSFET / IGBT 8 is also connected to the second output terminal via the seventh resistor R9. The source of the driven MOSFET / IGBT 8 is connected to the second output terminal.

[0052] In the embodiment of the present invention, the high-power MOSFET / IGBT driving circuit further includes a current-limiting resistor R1 , and the driving signal is input to the gate of the power amplifier field-effect transistor Q2 through the current-limiting resistor R1 .

[0053] In the embodiment of the present invention, the high-power MOSFET / IGBT driving circuit further includes an eighth resistor, and the gate of the power amplifier field-effect transistor Q2 is grounded via the eighth resistor.

[0054] In the present invention, the PWM signal is connected to the gate of the power amplifier field effect transistor Q2 through the current limiting resistor R1. The eighth resistor connected between the gate of the power amplifier field effect transistor Q2 and the ground can prevent the power amplifier field effect transistor Q2 from being mis-conducted.

[0055] The first capacitor C1, the first resistor R2, the second resistor R3, the first diode D1, the second diode D2 and the first PNP transistor Q1 in the circuit constitute a core reset circuit 3 for driving the isolation drive transformer 1, which can shape the waveform of the drive signal and reduce the voltage spike on the primary side of the isolation drive transformer 1.

[0056] The third diode D4 connected to the secondary side of the isolation drive transformer 1 can rectify the drive signal.

[0057] The accelerated turn-off circuit 6 composed of the fourth diode D3 , the second PNP transistor Q3 , the third resistor R5 , the fourth resistor R6 and the second capacitor C2 can accelerate the turn-off of the driven MOSFET / IGBT 8 .

[0058] The DC blocking circuit 5 composed of the fifth resistor R7 and the third capacitor C3 has a DC blocking function.

[0059] The fifth diode D5 and the sixth diode D6 form the positive and negative voltage clamps of the driving circuit.

[0060] The sixth resistor R8 is the gate resistor of the driven MOSFET / IGBT 8 and plays a role in adjusting the driving speed of the driven MOSFET / IGBT 8. The seventh resistor R9 is used to prevent the driven MOSFET / IGBT 8 from being mis-turned on.

[0061] The high-power MOSFET / IGBT drive circuit provided in an embodiment of the present invention comprises a MOSFET power amplifier circuit, a magnetic core reset circuit, an isolation drive transformer, a rectifier circuit, a DC blocking circuit, an accelerated shutdown circuit, positive and negative voltage clamping circuits, and a driven MOSFET / IGBT. This circuit only requires a single primary-side power supply, and the drive voltage has the function of turning on with a positive voltage and turning off with a negative voltage. Therefore, this circuit has the characteristics of a simple power supply structure, a steep waveform, and a fast switching speed. The driven MOSFET / IGBT can operate stably with low switching losses.

[0062] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any changes or substitutions within the technical scope disclosed by the present invention shall be covered by the scope of protection of the present invention. Therefore, the scope of protection of the present invention shall be based on the scope of protection of the claims.

Claims

1. A high-power MOSFET / IGBT drive circuit, characterized in that: It includes an isolation drive transformer, a MOSFET power amplifier circuit and a core reset circuit located on the primary side of the isolation drive transformer, and a rectifier circuit, a DC blocking circuit, an accelerated shutdown circuit, a positive and negative voltage clamping circuit, and a driven MOSFET / IGBT located on the secondary side of the isolation drive transformer; The input end of the MOSFET power amplifier circuit is connected to the driving signal, and the output end is connected to the primary side of the isolation drive transformer for signal amplification of the driving signal; The magnetic core reset circuit is externally connected to an input power supply and is connected to the input and output ends of the MOSFET power amplifier circuit and the primary side of the isolation drive transformer, and is used to shape the output waveform of the output end of the MOSFET power amplifier circuit and reduce the voltage spike on the primary side of the isolation drive transformer; The rectifier circuit is used to rectify the drive signal output from the secondary side of the isolation drive transformer; The accelerated shutdown circuit is connected to the secondary side of the isolation drive transformer, the input and output ends of the rectifier circuit, and the input end of the DC blocking circuit, and is used to accelerate the shutdown of the driven MOSFET / IGBT; The positive and negative voltage clamping circuit is connected between the output end of the DC blocking circuit and the secondary side of the isolation drive transformer to form positive and negative voltage clamping; The driven MOSFET / IGBT is connected to the positive and negative voltage clamping circuits.

2. The high-power MOSFET / IGBT drive circuit according to claim 1, characterized in that: The primary side of the isolation drive transformer includes a first input terminal and a second input terminal, and the secondary side of the isolation drive transformer includes a first output terminal and a second output terminal; The MOSFET power amplifier circuit includes a power amplifier field-effect transistor, the gate of the power amplifier field-effect transistor is the input end of the MOSFET power amplifier circuit, and is used to receive the drive signal; the drain of the power amplifier field-effect transistor is the output end of the MOSFET power amplifier circuit, and is connected to the second input end; the source of the power amplifier field-effect transistor is grounded.

3. The high-power MOSFET / IGBT drive circuit according to claim 2, characterized in that: The magnetic core reset circuit includes a first capacitor, a first resistor, a second resistor, a first diode, a second diode and a first PNP transistor; One end of the first capacitor is connected to the gate of the power amplifier field-effect transistor, and the other end of the first capacitor is connected to one end of the first resistor and one end of the second resistor; the other end of the first resistor is connected to the anode of the first diode, and the other end of the second resistor is connected to the base of the first PNP transistor; the cathode of the first diode is connected to the emitter of the first PNP transistor, the first input terminal, and the external input power supply; the collector of the first PNP transistor is connected to the cathode of the second diode; and the anode of the second diode is connected to the second input terminal and the drain of the power amplifier field-effect transistor; The second diode is a voltage stabilizing diode.

4. The high-power MOSFET / IGBT drive circuit according to claim 2, characterized in that: The rectifier circuit includes a third diode, the anode of the third diode is the input end of the rectifier circuit, connected to the first output end and the accelerated shutdown circuit, and the cathode of the third diode is the output end of the rectifier circuit, connected to the accelerated shutdown circuit and the input end of the DC isolation circuit.

5. The high-power MOSFET / IGBT drive circuit according to claim 4, characterized in that: The accelerated shutdown circuit includes a fourth diode, a second PNP transistor, a third resistor, a fourth resistor and a second capacitor; The base of the second PNP transistor is connected to the cathode of the fourth diode, one end of the third resistor, one end of the second capacitor, and one end of the fourth resistor; the emitter of the second PNP transistor is connected to the cathode of the third diode and the input end of the DC blocking circuit; and the collector of the second PNP transistor is connected to the other end of the fourth resistor and the second output end; The anode of the fourth diode, the other end of the third resistor, and the other end of the second capacitor are connected to the anode of the third diode and the first output end.

6. The high-power MOSFET / IGBT drive circuit according to claim 1, characterized in that: The DC blocking circuit includes a fifth resistor and a third capacitor connected in parallel.

7. The high-power MOSFET / IGBT drive circuit according to claim 2, characterized in that: The positive and negative voltage clamping circuit includes a fifth diode and a sixth diode; the cathode of the fifth diode is connected to the output end of the DC blocking circuit, the anode of the fifth diode is connected to the anode of the sixth diode, and the cathode of the sixth diode is connected to the second output end; The fifth diode is a voltage stabilizing diode.

8. The high-power MOSFET / IGBT drive circuit according to claim 7, characterized in that: Also including a sixth resistor and a seventh resistor; The gate of the driven MOSFET / IGBT is connected to the cathode of the fifth diode through the sixth resistor, the gate of the driven MOSFET / IGBT is also connected to the second output terminal through the seventh resistor, and the source of the driven MOSFET / IGBT is connected to the second output terminal.

9. The high-power MOSFET / IGBT drive circuit according to claim 2, characterized in that: It also includes a current limiting resistor, and the driving signal is input to the gate of the power amplifier field effect tube through the current limiting resistor.

10. The high-power MOSFET / IGBT drive circuit according to claim 9, characterized in that: An eighth resistor is further included, and the gate of the power amplifier field effect tube is grounded through the eighth resistor.

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