Mask manufacturing method and exposure system

Abstract

The invention discloses a method for manufacturing a mask, which comprises the following steps: exposing a material strip to obtain a first strip section with a plurality of first patterns, the material strip comprises a strip-shaped foil material and a photoresist layer formed on the surface of the strip-shaped foil material, a spacer region exists between two adjacent first patterns, and the photoresist layer is formed on the surface of the strip-shaped foil material; the first pattern comprises a plurality of mother mark patterns and a plurality of pixel hole patterns; a processor controls laser to expose the multiple spacer regions in sequence according to a set path to obtain a second band section with multiple second graphs, the set path is matched with a set drawing in the processor, the second graphs comprise multiple sub-mark graphs corresponding to the multiple main mark graphs, and the sub-mark graphs correspond to the multiple main mark graphs. And an auxiliary pattern corresponding to the spacer region. The invention also discloses an exposure system.

Description

TECHNICAL FIELD

[0001] The present application relates to a mask manufacturing method and an exposure system. BACKGROUND

[0002] In order to improve the production capacity of large-size organic light-emitting diode (OLED) display screens, many domestic fine metal mask (FMM) manufacturers are researching and producing high-generation FMMs.

[0003] At present, a larger parallel exposure machine is generally used for the overall exposure of a high-generation FMM. However, China currently does not have the production capacity of exposure machines for high-generation FMMs and their large-size masks, and usually relies on imported machines from abroad at a high price. In addition, since the mask, exposure area, and size of the exposure machine table of the high-generation FMM are all increased, they are not compatible with the small-size exposure machine for the low-generation FMM. The small-size exposure machine and mask for the low-generation FMM cannot be improved to a high generation, which further increases the manufacturing cost of the high-generation FMM, thereby being not conducive to the cost reduction and market popularization of the terminal product OLED screen.

[0004] Therefore, it is an urgent problem to be solved in the field to develop an alternative solution for high-generation FMM exposure, so that the existing small-size exposure machine can realize the processing and production of high-generation large-size FMMs, improve the efficiency of the exposure machine, and reduce the economic cost. SUMMARY

[0005] The present application aims to solve one of the problems in the related art to some extent. To this end, the present application provides a mask manufacturing method and an exposure system.

[0006] In order to achieve the above-mentioned purpose, as a first aspect of the present application, a method for manufacturing a mask is provided, comprising: exposing a tape to obtain a first tape segment having a plurality of first patterns, wherein the tape comprises a tape-shaped foil and a photoresist layer formed on the surface of the tape-shaped foil, there is an interval between two adjacent first patterns, the first pattern comprises a plurality of mother mark patterns and a plurality of pixel hole patterns; controlling the laser to set a path to expose the plurality of intervals in turn to obtain a second tape segment having a plurality of second patterns, wherein the set path matches the set pattern in the processor, the second pattern comprises a plurality of sub-mark patterns corresponding to the plurality of mother mark patterns, and an auxiliary pattern corresponding to the interval, and the control of the laser to set a path to expose the interval includes: obtaining the actual coordinates of the mother mark pattern; determining a deviation relationship between the actual coordinates and corresponding theoretical coordinates in the setting drawing, the theoretical coordinates corresponding to the sub-marking patterns; correcting the setting path according to the deviation relationship and obtaining a starting coordinate, so that the second pattern formed by the setting path and the corresponding first pattern meet a set standard in alignment accuracy; controlling the laser to expose corresponding interval areas along the setting path starting from the starting coordinate, to obtain the corresponding second pattern.

[0007] Further, in the step of determining the deviation relationship between the actual coordinates and corresponding theoretical coordinates in the setting drawing, the step includes: determining a first offset size of the actual coordinates relative to the theoretical coordinates along the length direction of the material belt; determining a second offset size of the actual coordinates relative to the theoretical coordinates along the width direction of the material belt; determining a deviation value of the distance between adjacent two actual coordinates relative to the distance between corresponding adjacent two theoretical coordinates; determining a deviation angle between the connecting direction of adjacent two actual coordinates and the connecting direction between corresponding adjacent two theoretical coordinates; establishing the deviation relationship between the actual coordinates and the theoretical coordinates according to the first offset size, the second offset size, the deviation value and the deviation angle.

[0008] Further, in the step of correcting the setting path according to the deviation relationship and obtaining a starting coordinate, so that the second pattern formed by the setting path and the corresponding first pattern meet a set standard in alignment accuracy, the step includes: in the case that the deviation value exceeds a set range, the second pattern formed by the setting path is enlarged or reduced to match the size of the first pattern by enlarging or reducing the electronic drawing; in the case that the first offset size or the second offset size exceeds a set value, the sub-marking pattern formed by the setting path is aligned with the mother-marking pattern in alignment accuracy by offsetting the starting coordinate along the length or width direction of the material belt; in the case that the deviation angle exceeds a set angle, the second pattern formed by the setting path is rotated relative to the first pattern by rotating the electronic drawing to meet a set standard in rotation angle.

[0009] Further, the material strip has a plurality of first exposure regions for forming the first pattern, the length of the pixel hole pattern is less than the length of the first exposure region, so that there is a material strip blank region between the edge of the pixel hole pattern and the edge of the first exposure region, the mother mark pattern is located in the material strip blank region, The mother mark pattern includes a plurality of first marks and a plurality of second marks, the first marks and the second marks are symmetrically arranged with respect to the pixel hole pattern, for respectively aligning the second pattern on both sides of the first pattern.

[0010] Further, the interval region includes a first interval region and a second interval region, the first interval region is adjacent to one side of the first pattern, and the second interval region is adjacent to the other side of the same first pattern, the second pattern includes a first screen pattern corresponding to the first interval region and a second screen pattern corresponding to the second interval region, The first mark is used for alignment of the first screen pattern and the first pattern, and the second mark is used for alignment of the second screen pattern and the first pattern.

[0011] Further, in the step of exposing the plurality of interval regions in sequence by controlling the laser to set the path, the step includes: Pulling the material strip along a first length direction, and exposing the plurality of first interval regions in sequence by controlling the laser to form a plurality of first screen patterns; Pulling the material strip along a second length direction, and exposing the plurality of second interval regions in sequence by controlling the laser to form a plurality of second screen patterns, the first length direction being opposite to the second length direction.

[0012] Further, the first pattern further includes at least one center hole and at least two alignment holes, the center hole is located at the center of the pixel hole pattern, and at least one of the alignment holes is located at the middle of any one wide side of the first pattern, so that the line connecting the center hole and the alignment hole has a first direction, the first direction being consistent with the length direction of the material strip, The second pattern includes a fixed hole located at the middle of the second pattern along the width direction of the material strip, the included angle between the line connecting the center hole and the fixed hole and the first direction forms a misalignment angle, the misalignment angle is used to display the rotation angle of the second pattern which has been exposed and formed relative to the corresponding first pattern.

[0013] As a second aspect of the present application, an exposure system is disclosed, the exposure system includes a conveying mechanism, a first exposure device and a second exposure device, The conveying mechanism is used to drive the material belt to pass through the first and second exposure devices in sequence to form a plurality of first and second patterns on different areas of the material belt, The first exposure device comprises at least one first light source and at least one light shield, the light shield is located on the light emitting side of the first light source, and the light shield comprises a mother mark pattern area and a pixel hole pattern area, which are used to expose the material belt to form a mother mark pattern and a pixel hole pattern. The second exposure device comprises a detection module, a processor module and at least one laser source, the detection module is used to obtain the actual coordinates of the mother mark pattern, the processor module is configured with a set drawing, and the processor module is used to match the actual coordinates obtained by the detection module with the set drawing to establish the offset relationship between the actual coordinates and the corresponding theoretical coordinates in the set drawing, and control the laser source to expose the material belt to form the second pattern according to the offset relationship.

[0014] Further, the first exposure device comprises two light shields and two first light sources for exposing the front and back surfaces of the material belt, the two light shields are oppositely and spacedly arranged, the two first light sources are respectively located on the outer sides of the two light shields, and the interval between the two light shields is used for the material belt to pass through. The second exposure device comprises two oppositely and spacedly arranged laser sources for exposing the front and back surfaces of the material belt, and the interval between the two laser sources is used for the material belt to pass through.

[0015] Further, the conveying mechanism comprises an unwinding mechanism, a winding mechanism and a position control module, The unwinding mechanism and the winding mechanism are respectively arranged at the inlet position and the outlet position of the second exposure device, so that the material belt moves in the second exposure device through the unwinding of the unwinding mechanism and the winding of the winding mechanism. The position control module comprises a controller and at least two detectors, the two detectors are respectively located at the unwinding mechanism and the winding mechanism to detect the transmission position of the material belt, and the controller is used to control the unwinding mechanism and the winding mechanism through the position detected by the detector to realize the winding and unwinding of the material belt.

[0016] Further, the second exposure device comprises a motion adjustment mechanism, the laser source is fixedly connected with the motion adjustment mechanism, the motion adjustment mechanism can move in multiple directions relative to the material belt, and the processor module controls the motion adjustment mechanism to expose the material belt to the laser source in a set path.

[0017] Further, the exposure system further comprises a tensioning mechanism for providing the exposure tension of the material belt, the tensioning mechanism comprises a first pinch roller set and a second pinch roller set respectively located on both sides of the to-be-exposed area of the first exposure device, and the first pinch roller set and the second pinch roller set form a set exposure tension by clamping and conveying the material belt.

[0018] The method for manufacturing a mask provided by the application is particularly suitable for a precision metal mask (FMM), and a large-size material belt is used as an exposure substrate. A higher-generation large-size FMM is exposed by using an existing low-generation exposure machine and a laser exposure combination, and a first pattern and a second pattern are established in an offset relationship through alignment marks. On the one hand, the alignment accuracy of the first pattern and the second pattern meets the demand, and the alignment accuracy of the material belt splicing exposure method of the application is more accurate. On the other hand, high alignment accuracy and exposure consistency can still be achieved when the material belt is exposed in batches, so that the FMM has the same size and evaporation effect as the FMM formed by high-generation exposure, and the application has lower cost.

[0019] The features and advantages of the present application will be described in detail in the following detailed description and drawings. The best mode or means of the present application will be fully described in conjunction with the drawings, but it is not a limitation on the technical solutions of the present application. In addition, the features, elements and components appearing in each of the following text and drawings are multiple, and different symbols or numbers are marked for convenience of representation, but all represent the same or similar structures or functions. BRIEF DESCRIPTION OF DRAWINGS

[0020] The present application will be further described below in conjunction with the drawings: Figure 1 is a traditional large-size precision metal mask manufacturing process flowchart; Fig. 2(a) is a mask manufacturing method process flowchart of the present application; Fig. 2(b) is a mask manufacturing method process flowchart of the present application; Figure 3 is a schematic diagram of an embodiment of the exposure system of the present application; Figure 4 is an alignment form of the parent mark pattern and the child mark pattern of the present application; Figure 5 is a schematic diagram of an embodiment of the alignment mark of the present application; Figure 6 is a schematic diagram of an embodiment of the photomask of the present application; Figure 7 is a schematic diagram of the offset relationship of the present application; Fig. 8(a) is a schematic diagram of an embodiment of the offset relationship in the alignment mark of the present application; Fig. 8(b) is a schematic diagram of an embodiment of the offset relationship in the alignment mark of the present application; Fig. 8(c) is a schematic diagram of an embodiment of the offset relationship in the alignment mark of the present application; Figure 9 is a schematic diagram of the second pattern of the present application; Figure 10 is a schematic diagram of the misalignment angle of the present application; Fig. 11(a) is a schematic diagram of the pattern after exposure of the material strip of the present application; Fig. 11(b) is a schematic diagram of the pattern after exposure of the material strip of the present application; Figure 12 is a flow chart of the embodiment of the manufacturing method of the mask of the present application; Figure 13 is a photograph of the alignment mark of the mask of the present application.

[0021] Explanation of Reference Signs 1: exposure system; 2: material strip; 10a: first unwinding mechanism; 10b: first winding mechanism; 103: first pinch roller set; 104: second pinch roller set; 101: photomask; 10: first exposure device; 11a: unwinding mechanism; 11b: winding mechanism; 11: second exposure device; 110: laser source; 1012': mother mark pattern; 2001': child mark pattern; 1011: pixel hole area; 1012: mother mark area; 1013: center hole area; 1014: alignment hole area; 200a: ideal second exposure area; 200b: set second exposure area; 2001: set child mark area; θ: offset angle; 201: first screen pattern; 202: second screen pattern; 2002: fixed hole area; 2003: auxiliary stretching area; 2004: lap area; 1013': center hole; 1014': alignment hole; α: misalignment angle; 1011': pixel hole pattern; 2002': fixed hole. DETAILED DESCRIPTION

[0022] Embodiments of the present application are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference signs represent the same or similar elements or elements having the same or similar functions throughout. Based on the embodiments in the embodiments, it is intended to explain the present application, and cannot be understood as a limitation of the present application.

[0023] "An embodiment" or "one embodiment" or "an example" or "one example" or "an example of" as used herein means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the disclosure. The appearances of the phrase "in one embodiment" in various places in the specification are not necessarily all referring to the same embodiment.

[0024] The inventors have found that, considering the splitting efficiency of a single screen, the current 6th generation active-matrix organic light-emitting diode (AMOLED) production line (G6, glass backplane size 1500*1850mm) is being iteratively updated to an 8.6th generation AMOLED production line (G8.6, glass backplane size 2290*2620mm). Currently, the domestic G6 FMM production has just started to enter the track in the past two years, and the FMM production supporting the G8.6 AMOLED production line is still in the initial stage. In response to the trend of the international industry, several domestic panel factories have decided to invest in the eight-generation line (e.g., G8.6H) to produce medium-sized AMOLED displays or increase the production of small-sized smartphone displays. The cost of production line investment is high, and the cost of the precision metal mask required for the evaporation manufacturing of AMOLED display products is also very high. As the size of the AMOLED display substrate increases, the photolithography equipment required for the production of FMM also needs to be increased to the size of the eight-generation line. This greatly increases the manufacturing cost of FMM.

[0025] The size comparison of the current six-generation AMOLED production line and the new eight-generation line is shown in Table 1, for example.

[0026] Table 1. Six-generation (G6H) & eight-generation (G8.6H) line AMOLED display and related size examples of FMM products

[0027] Conventionally, as the generation of AMOLED display manufacturing increases, the size of the glass substrate increases, and therefore the size of the precision metal mask required for manufacturing also needs to increase. A conventional manufacturing process flow chart is shown in Table 1, for example. Figure 1

[0028] The pattern designed on the precision metal mask product is exposed by a large-size eight-generation line exposure machine, and an eight-generation line large-size photomask is used to transfer the pattern required by the FMM onto the photoresist film in one exposure.

[0029] ​To solve the above-mentioned related problems, the present application provides a manufacturing method of large-size FMM required for large-generation AMOLED line, which is manufactured by a low-generation production line with small size through innovative design and process to manufacture large-size precision metal mask plate. This method can manufacture high-quality precision metal mask plate with low-cost equipment and production cost. The manufactured large-size precision metal mask plate is suitable for manufacturing high-quality precision metal mask plate strip required for large-generation (G8 half plate or larger size) AMOLED evaporation, and the manufactured precision metal mask plate has good use effect when used as a shadow mask for AMOLED thermal evaporation.

[0030] As a first aspect of the present application, as shown in FIG. 2(a) and FIG. 2(b), a method for manufacturing a mask plate is provided, comprising: S100, exposing a material belt to obtain a first belt segment with a plurality of first patterns, wherein the material belt comprises a belt-shaped foil and a photoresist layer formed on the surface of the belt-shaped foil, and there is a spacing area between adjacent two first patterns, the first pattern comprises a plurality of mother mark patterns and a plurality of pixel hole patterns; S200, exposing a plurality of spacing areas in turn by controlling laser to set a path through a processor, to obtain a second belt segment with a plurality of second patterns, wherein the set path matches the set drawing in the processor, the second pattern comprises a plurality of sub-mark patterns corresponding to a plurality of mother mark patterns, and an auxiliary pattern corresponding to the spacing area; Wherein, controlling laser to set a path to expose the spacing area includes: S201, obtaining the actual coordinates of the mother mark pattern; S202, determining the offset relationship between the actual coordinates and the corresponding theoretical coordinates in the set drawing, the theoretical coordinates corresponding to the sub-mark pattern; S203, correcting the set path according to the offset relationship, and obtaining the starting coordinates, so that the alignment accuracy of the second pattern formed by the set path and the corresponding first pattern meets the set standard; S204, controlling laser to expose the corresponding spacing area along the set path with the starting coordinates as the starting point to obtain the corresponding second pattern.

[0031] The method for manufacturing a mask provided by the application is especially suitable for a precision metal mask FMM, a large-size material belt is used as an exposure substrate, a higher generation large-size FMM is exposed by using an existing low-generation exposure machine and a laser exposure combination through a special long-material splicing exposure method, a first pattern and a second pattern are established in an offset relationship through alignment marks, on one hand, the alignment accuracy of the first pattern and the second pattern meets the demand, the alignment accuracy of the material belt splicing exposure method of the application is more accurate, on the other hand, high alignment accuracy and exposure consistency can still be obtained when the material belt is exposed in batches, so that the same size and evaporation effect as the FMM exposed by a high-generation exposure are obtained, and the application has lower cost.

[0032] In step S100, as an optional implementation manner, as shown in Figure 3 、 Figure 6 , FIG. 11 (a) and FIG. 11 (b), the material belt 2 is pulled to transmit in the unwinding direction, so that the material belt 2 is exposed to form a plurality of first patterns in the length direction in turn, and the plurality of first patterns are A1, A2, A3 to An in the exposure order respectively, the number of the exposed first patterns is not specially limited in the application, and the longest length that can be pulled by the equipment is met, that is, n in An is not limited, which can be A4, A6, A8, A12 and the like. In some embodiments, the conveying mechanism includes a first unwinding mechanism 10a, a first winding mechanism 10b and a position control unit, and the first exposure device 10 for exposing to form the first pattern is located between the first unwinding mechanism 10a and the first winding mechanism 10b, so that the material belt 2 can be moved by being unwound and wound in the first exposure device 10, thereby exposing to form a plurality of first patterns in the length direction in turn.

[0033] The exposure of the first pattern can adopt contact mask exposure or maskless laser exposure, as preferred, since the first pattern includes a pixel hole pattern, higher precision is required, the line width precision of the contact mask exposure is less than that of the laser exposure, and therefore the contact mask exposure is preferred, and the mask 101 corresponding to the first pattern is as shown in Figure 3 、 Figure 6 and FIG. 11 (a), the mask 101 is provided with a pixel hole area 1011, a mother mark area 1012, an alignment hole area 1014 and a center hole area 1013, so that the corresponding pixel hole pattern 1011', the mother mark pattern 1012', the alignment hole 1014' and the center hole 1013' are formed on the material belt 2 by using the mask 101, the shape of the mother mark pattern 1012' in the first pattern is not specially limited in the application, and only needs to meet the matching to form the alignment mark with the sub-mark pattern 2001', as shown in Figure 4 and Figure 5 .

[0034] In step S200, the step of determining the offset between the actual coordinates and the corresponding theoretical coordinates in the setting drawing, as an optional implementation, specifically includes: Determine a first offset dimension of the actual coordinate relative to the theoretical coordinate along the length direction of the material strip; Determine a second offset dimension of the actual coordinate relative to the theoretical coordinate along the width direction of the material strip; Determine the deviation value of the distance between two adjacent actual coordinates relative to the distance between two corresponding adjacent theoretical coordinates; Determine the offset angle between the direction of the line connecting two adjacent actual coordinates and the direction of the line connecting two corresponding adjacent theoretical coordinates; An offset relationship between the actual coordinates and the theoretical coordinates is established according to the first offset size, the second offset size, the deviation value, and the offset angle.

[0035] Here we need to explain how to establish the offset relationship. Figure 7 As shown in FIG8 (a) to FIG8 (c), after the exposure of the plurality of first patterns is completed, the material strip has a plurality of ideal second exposure areas 200a for exposing the second pattern. However, when the material strip is exposed to the second pattern, there may be problems such as material strip position offset, laser position offset, transmission position error, processor conversion error, etc., which may cause the set second exposure area 200b to deviate from the ideal second exposure area 200a. Figure 7 As shown, it is specifically reflected in setting the alignment offset of the sub-mark area 2001 and the parent mark graphic 1012', as shown in Figure 8 (a) to Figure 8 (c), the alignment offset situations are divided into the expansion and contraction caused by setting the sub-mark area 2001 to be reduced or enlarged relative to the parent mark graphic 1012', the translation caused by setting the sub-mark area 2001 to have an offset distance along the horizontal or vertical direction relative to the parent mark graphic 1012', and the rotation offset caused by setting the sub-mark area 2001 to rotate a specific angle relative to the parent mark graphic 1012'. Therefore, the offset relationship established by the present application based on the actual coordinates and the theoretical coordinates of the sub-mark graphic in the electronic drawing is mainly determined by the above situations.

[0036] In some embodiments, the deviation between the distance between two adjacent actual coordinates and the distance between two adjacent corresponding theoretical coordinates is determined, and if there is a deviation, it means that the deviation between the actual coordinates and the theoretical coordinates includes a scaling relationship. For example, if the horizontal coordinates and the vertical coordinates of any actual coordinate and the corresponding theoretical coordinate are inconsistent, it means that the deviation between the actual coordinates and the theoretical coordinates includes a translation relationship. For example, the direction of the line connecting two adjacent actual coordinates is the first line direction, and the direction of the line connecting two adjacent corresponding theoretical coordinates is compared with the first line direction. If there is a deviation, the angle between the two lines is the deviation angle θ, as shown in FIG. 8(c), which means that the deviation between the actual coordinates and the theoretical coordinates includes a rotational deviation relationship.

[0037] The actual deviation relationship is obtained by synthesizing the above-mentioned various position relationships.

[0038] In step S203, it includes: In the case where the deviation value exceeds the set range, the electronic paper is enlarged or reduced so that the size of the second pattern formed by the set path matches the size of the first pattern; In the case where the first deviation size or the second deviation size exceeds the set value, the starting coordinates are offset in the length or width direction of the material belt to compensate for the deviation, so that the alignment accuracy of the child mark pattern and the parent mark pattern formed by the set path meets the set standard; In the case where the deviation angle exceeds the set angle, the electronic paper is rotated so that the rotation angle of the second pattern relative to the first pattern formed by the set path meets the set standard.

[0039] The present application does not make special limitations on the position of the parent mark pattern 1012' on the first pattern, and only needs to meet the requirement of not affecting the pixel hole pattern 1011'. As a specific embodiment, as shown in FIG. 11(a) and FIG. 11(b), the material belt has a plurality of first exposure areas (not shown) for forming the first pattern, the length of the pixel hole pattern is less than the length of the first exposure area, so that there is a material belt blank area between the edge of the pixel hole pattern and the edge of the first exposure area, and the parent mark pattern is located in the material belt blank area. The parent mark pattern includes a plurality of first marks and a plurality of second marks, and the first marks and the second marks are symmetrically arranged about the pixel hole pattern to align the second patterns on both sides of the first pattern, respectively.

[0040] Generally, the exposure length of the material belt 2 relative to the cut FMM substrate is longer, so it is more prone to alignment deviation, and the degree of alignment deviation increases gradually with the length. As a preferred embodiment, the second pattern needs to be aligned with the corresponding parent mark pattern 1012' before being exposed in each interval.

[0041] The shape of the master mark pattern 1012' is not particularly limited in the present application, and only needs to satisfy a symmetrical pattern capable of precise alignment. As a preferred embodiment, the master mark pattern 1012' includes at least one of a circle, a square, and a cross, and the mark size is determined according to the design of the optical sensor of the exposure system and the size of the viewing area. Generally, the size is in the range of 500 µm to 3500 µm.

[0042] In some embodiments, the master mark pattern 1012' includes at least 4 first marks, at least 2 first marks are arranged at one side of the long side of the material tape 2, and at least 2 first marks are arranged at the other side of the long side of the material tape 2. In this way, the spacing areas on both sides of the first pattern have the same alignment form, and the exposure of the second pattern in the spacing areas on both sides is avoided due to the change of the marks. When a longer material tape 2 is exposed, the long side often has a single-sided wavy edge. Therefore, as a preferred embodiment, at least 2 first marks are arranged on each long side, which can facilitate the detection and alignment of each long side and the correction of the position. The distance between adjacent first marks in the length direction varies with the design of the FMM product, and is generally between 2 mm and 70 mm. As a preferred embodiment, the distance between two adjacent first marks is 2 times or more (≥2D) the field of view diameter (D) of the optical detection sensor. The maximum distance between adjacent first marks in the width direction is only slightly smaller than the width of the material tape, and is between 50 mm and 720 mm.

[0043] In order to meet the requirement of exposing a high-generation large-size FMM substrate with a low-generation small exposure machine, the present application adopts a splicing exposure mode, that is, the pixel hole pattern 1011' of the FMM is exposed separately from the auxiliary patterns on both sides for screen stretching, so that the pixel hole pattern of the FMM can be widened to the entire mask. Figure 3 As shown in FIG. 11, the requirement of a high-generation large-size FMM is met. Generally, the auxiliary pattern is arranged on both sides of the first pattern, that is, as shown in FIG. 11, the spacing area includes a first spacing area and a second spacing area, the first spacing area is adjacent to one side of the first pattern, and the second spacing area is adjacent to the other side of the same first pattern. The second pattern includes a first screen stretching pattern corresponding to the first spacing area and a second screen stretching pattern corresponding to the second spacing area. The first mark is used for the alignment of the first screen stretching pattern and the first pattern, and the second mark is used for the alignment of the second screen stretching pattern and the first pattern.

[0044] The first screen stretching pattern and the second screen stretching pattern of the present application are as shown in Figure 9As shown, the first screen pattern 201 comprises a fixed hole area 2002, an auxiliary stretching area 2003 and an overlapping area 2004, and the second screen pattern 202 also comprises a fixed hole area 2002, an auxiliary stretching area 2003 and an overlapping area 2004, and the first screen pattern 201 and the second screen pattern 202 are symmetrically arranged on both sides of the middle first pattern.

[0045] The present application does not make special limitation on the order of how the first screen pattern and the second screen pattern are exposed, for example, after the first pattern is exposed, a plurality of first screen patterns can be exposed in sequence and then a plurality of second screen patterns can be exposed in sequence; for another example, a first screen pattern can be exposed first, then a second screen pattern adjacent or corresponding to the first screen pattern can be exposed, and the above steps can be repeated until all the second screen patterns are exposed.

[0046] As an optional embodiment, in the step of exposing the plurality of interval areas in sequence by controlling the laser to set the path, the step comprises: Pulling the material belt along the first length direction, and exposing the plurality of first interval areas in sequence by controlling the laser to form a plurality of first screen patterns; as shown in FIG. 11(b), the plurality of first screen patterns are B1, B2, B3 to Bn in sequence.

[0047] Pulling the material belt along the second length direction, and exposing the plurality of second interval areas in sequence by controlling the laser to form a plurality of second screen patterns, the first length direction is opposite to the second length direction, as shown in FIG. 11(b), the plurality of second screen patterns are C1, C2, C3 to Cn in sequence. The above exposure method can improve the exposure efficiency while having the required exposure accuracy.

[0048] Generally, the single alignment mark can only detect the offset along the length or width direction, which meets the alignment accuracy for the cut-to-shape FMM substrate, but it is far from enough to determine the length or width direction offset of the long-scale material belt 1 by using the single-point alignment mark, therefore, the present application increases the angle relationship of the adjacent marks, so as to detect and correct the angle deflection amount of the material belt 1. As a specific embodiment, as shown in FIG. 12, the angle relationship of the adjacent marks is that the angle between the first mark and the second mark is 90°, and the angle between the second mark and the third mark is 90°. Figure 10As shown, the first pattern further comprises at least one center hole and at least two alignment holes, the center hole is located at the center of the pixel hole pattern, and the at least one alignment hole is located at the middle of any one wide side of the first pattern, so that the line connecting the center hole and the alignment hole has a first direction, the first direction is consistent with the length direction of the material belt, the second pattern comprises a fixed hole located at the middle of the second pattern along the width direction of the material belt, and the included angle between the line connecting the center hole and the fixed hole and the first direction forms a misalignment angle, the misalignment angle is used to display the rotation angle of the second pattern formed after exposure relative to the corresponding first pattern. The misalignment angle of the present application can be detected after exposure forming, and in the most ideal case, the fixed hole 2002' is located on the line connecting the center hole 1013' and the alignment hole 1014', but due to the inevitable precision error, the included angle between the center hole 1013' and the line connecting the alignment hole 1014' and the fixed hole 2002' forms a misalignment angle, and the misalignment angle does not exceed the set angle. The misalignment angle determined by the center hole 1013', the alignment hole 1014' and the fixed hole 2002' can be used to monitor the angle of the material belt 2 after exposure, and when the misalignment angle meets the angle range, it represents that the exposure alignment accuracy of the material belt 2 is qualified, and when it does not meet the angle range, the material belt 2 is repaired, thereby improving the processing quality and process stability of the product.

[0049] The calculation method of the misalignment angle is: α= (△y / 2πr)*360°, wherein △y is the distance between the actually exposed fixed hole 2002' and the line connecting the center hole 1013' and the alignment hole 1014', and r is the distance between the center hole 1013' and the fixed hole 2002'.

[0050] It is worth noting that the misalignment angle of the pattern area is the degree of misalignment of the pattern of a single product made by multiple exposures, which is different from the alignment mark. The misalignment angle of the present application is a product feature formed by the alignment method of the present application, and currently only the present application uses the misalignment angle method for calibration and monitoring.

[0051] The present application can use single-sided exposure or double-sided exposure. As a preferred embodiment, the material belt 1 has opposite front and back surfaces, and the front and back surfaces are coated with a photoresist layer. Double-sided exposure is performed on the front and back surfaces of the material belt 1 to form front and back patterns, respectively. The double-sided exposure form can further improve the exposure efficiency.

[0052] Due to the difference between the photoresist and the dry film, as a preferred embodiment, the exposure energy is between 20 mJ / cm2 and 200 mJ / cm2, and the uniformity of illumination in the exposure area is within 5%.

[0053] The present application mainly ensures the precision alignment accuracy of multiple pattern exposure. It has device improvements; also needs detailed and accurate precision alignment mark design, and alignment process, and adjustment details of secondary pattern data, to realize low-cost high-quality product manufacturing.

[0054] The manufacturing method of the present application further comprises: performing a post-development etching treatment on the strip segment with the plurality of first patterns and second patterns to obtain a mask plate.

[0055] As Figure 12 shown, it is a specific manufacturing method of the present application, specifically comprising: S1001, making a high-flatness inchva metal coil, which can be achieved by thinning; S1002, cleaning the high-flatness inchva metal coil to clean the surface of the high-flatness inchva metal coil; S1003, surface treatment of the inchva metal coil, removing contaminants and oxide layers on the surface of the inchva metal foil and optimizing the thickness of the inchva metal coil; S1004, attaching a photoresist film to the cleaned inchva metal coil, if necessary, vacuum bonding, high-temperature baking, or using an interface bonding agent can be used to enhance the bonding force; S1005, sequentially exposing the surface of the strip 1 to form a plurality of first patterns; S1006, sequentially exposing the plurality of interval regions to form a plurality of first screen patterns; S1007, sequentially exposing the plurality of interval regions to form a plurality of second screen patterns; according to the resolution and accuracy requirements of the manufactured patterns, the three exposures of the above three patterns can use the same exposure system, or a combination of different exposure systems, and the exposure system is preferably a combination of contact mask exposure and laser direct writing exposure. Since multiple exposures are used to divide the complete pattern of the large-size FMM product into three parts, in order to reduce the mutual offset and misalignment of the exposed patterned regions, a positioning mark group is used in the design of the FMM product, and the pattern can be diverse.

[0056] S1008, developing the above strip, specifically, immersing the exposed photoresist film and inchva metal coil in a developing solution to develop, and accurately manufacturing the desired pattern on the photoresist; since the photoresist is a light-sensitive material, the structure and chemical properties of the area exposed to light are different from the area not exposed to light, and this characteristic can be used for development. After all the patterns on the inchva coil are exposed three times, the coil is moved to the development section, the exposed photoresist film is passed through the developing solution tank, the photoresist in the area not cured due to exposure (this is an example of negative photoresist) is dissolved, and the desired fine pattern is left on the remaining photoresist film.

[0057] S1009, precision etching, which can be single-sided etching or double-sided etching; in some embodiments, after forming the required precision pattern on the photoresist on the foil, the precision pattern on the photoresist formed by the photoetching process is transferred to the metal foil by a pattern forming process of wet etching to form a precision metal mask plate with the required precision micro-hole structure. Etching can be double-sided etching at the same time, or single-sided etching in two steps. After developing the photoresist film and the metal foil roll, the part of the metal foil not covered by the photoresist film is in contact with the etching solution and is etched. After etching on both sides, the precision micro-pattern on the photoresist is etched on the metal foil to form a corresponding fine hole pattern; S1010, film removal, specifically, removing the photoresist film. After completing the etching on both sides, the photoresist film on the etched foil roll is removed in the film removal machine, leaving the metal foil roll with etching patterns to form the FMM patterned metal foil roll. The micro-hole size range of the micro-hole formed by the wet etching process is between 10 µm and 200 µm.

[0058] S1011, cutting and testing, specifically, the metal foil roll with the patterned FMM finished product after film removal is cut into FMM strip finished products according to the size of the set FMM product, and the precision metal mask plate strip is tested according to the product specification.

[0059] S1012, product packaging and delivery, specifically, the FMM strip finished product that passes the test is packaged and delivered to the customer.

[0060] As a second aspect of the present application, an exposure system is disclosed, as shown in the figure, Figure 3 The exposure system 1 includes a conveying mechanism, a first exposure device 10 and a second exposure device 11, the conveying mechanism is used to drive the material belt to pass through the first exposure device 10 and the second exposure device 11 in turn, so as to expose the material belt in different areas to form a plurality of first patterns and second patterns, The first exposure device 10 includes at least one first light source and at least one light mask, the light mask is located on the light emitting side of the first light source, and the light mask includes a mother mark pattern area and a pixel hole pattern area, which are used to expose the material belt to form a mother mark pattern and a pixel hole pattern; The second exposure device 11 includes a detection module, a processor module and at least one laser source 110, the detection module is used to obtain the actual coordinates of the mother mark pattern, the processor module is configured with a set drawing, and the processor module is used to match the actual coordinates obtained by the detection module with the set drawing to establish the offset relationship between the actual coordinates and the corresponding theoretical coordinates in the set drawing, and control the laser source to expose the material belt to form the second pattern according to the offset relationship.

[0061] As an optional embodiment, the first exposure device comprises two masks and two first light sources for exposing the front and back of the material belt, the two masks are oppositely and spacedly arranged, and the two first light sources are respectively located outside the two masks. The space between the two masks is used for the material belt to pass through. In some embodiments, the first light source can be a high-pressure UV lamp, and the main wavelengths are 365 nm (I line), 405 nm (h line) or 436 nm (g line). The exposure area is preferably 1300*600 mm; the initial illumination of the light source is more than 12 mW / cm2, and the illumination uniformity is within ±8%.

[0062] The second exposure device comprises oppositely and spacedly arranged laser sources for exposing the front and back of the material belt, and the space between the two laser sources is used for the material belt to pass through.

[0063] As an optional embodiment, the conveying mechanism comprises an unwinding mechanism 11a, a winding mechanism 11b and a position control module. The unwinding mechanism 11a and the winding mechanism 11b are respectively arranged at the inlet position and the outlet position of the second exposure device 11, so that the material belt moves in the second exposure device 11 through the unwinding of the unwinding mechanism and the winding of the winding mechanism. The position control module comprises a controller and at least two detectors. The two detectors are respectively located at the unwinding mechanism and the winding mechanism for detecting the transmission position of the material belt. The controller is used to control the unwinding mechanism and the winding mechanism through the position detected by the detector to realize the winding and unwinding of the material belt. It can be understood that the first unwinding mechanism and the second unwinding mechanism can also be consistent with the structure of the unwinding mechanism and the winding mechanism.

[0064] In some embodiments, the unwinding mechanism and the winding mechanism specifically comprise a roll mounting shaft and a rotating mechanism. The rotating mechanism can be driven to rotate by a driving mechanism to make the roll mounting shaft wind or unwind the roll material. The tension adjusting mechanism is used to apply different or same pressure to both sides of the roll material on the roll mounting shaft, so that the tension of the roll material can be adjusted.

[0065] In some embodiments, the unwinding mechanism and the winding mechanism and the second exposure device are connected by a roller conveying device to feed the material belt. As a preferred embodiment, the single feeding amount is between 10 mm and 1500 mm.

[0066] As a specific embodiment, the exposure system 1 further comprises a tensioning mechanism for providing an exposure tension of the material belt. The tensioning mechanism comprises a first pinch roller set 103 and a second pinch roller set 104 respectively located on both sides of the exposure area of the first exposure device. The first pinch roller set 103 and the second pinch roller set 104 are used to form a set exposure tension by clamping and conveying the material belt. The set exposure tension is preferably between 10 N and 150 N.

[0067] As a preferred, the tension of the pinch roller is between 20N and 80N, in addition, the tape 2 can also be adjusted by the tensioning mechanism along the transmission direction of the inclination angle. The type of the first exposure device is not particularly limited in the present application, for example, it can be a roll-to-roll contact exposure machine, or a roll-to-roll proximity exposure. As a preferred, the roll-to-roll contact exposure machine is adopted, which is an equipment for precisely aligning the tape with photoresist film on both sides with the mask, and then transferring the pattern on the mask to the photoresist layer on both sides (or single side) by vacuum contact exposure reaction. The equipment can continuously expose and manufacture the whole roll of tape according to the following sequence: tape unwinding, tape feeding, mask precise alignment, exposure and tape winding. The alignment accuracy of the front and back alignment of the mask can be within 1 μm, as a preferred, within 0.5 μm, and the transmission position accuracy of the tape is within 200 μm.

[0068] As a preferred, the second exposure device includes a laser direct writing exposure. The second exposure device includes a motion adjustment mechanism, the laser source is fixedly connected with the motion adjustment mechanism, the motion adjustment mechanism can move in multiple directions relative to the tape, and the processor module controls the motion adjustment mechanism to expose the tape with a set path.

[0069] The features and performances of the present application are further described in detail in the following embodiments.

[0070] Embodiment Embodiment 1 A manufacturing method of FMM, Manufacturing high flatness invar metal foil material roll: taking high flatness, low thermal expansion coefficient iron-nickel alloy foil as raw material. The highest protrusion height in the foil is below 0.6mm, and the edge wave height on both sides is below 0.8mm.

[0071] Surface cleaning: clean the high flatness metal foil material roll with cleaning agent; remove surface dust, pollutants, residual grease, etc.

[0072] Surface treatment: the cleaned metal roll is treated by chemical acid solution to remove the oxide layer on the surface of the metal foil, reduce surface defects such as calender marks, scratches, pits, etc., and optimize the thickness of the foil roll.

[0073] Attaching photoresist film: attaching photoresist film on both sides of the metal roll after surface treatment. If the adhesion needs to be enhanced, vacuum bonding, high temperature baking, or using interface bonding agent, etc. can be used.

[0074] Exposure: The material band is obtained by unwinding and winding the material roll by the conveying mechanism. The material band is pulled along the length direction of the material band by the conveying mechanism to transmit along the first length direction, so that the material band is contact-exposed by the light shield of the first exposure device along the length direction to form a plurality of first patterns in sequence. The plurality of first patterns are A1, A2, A3, and An in sequence according to the exposure order. The first pattern includes a plurality of pixel hole patterns and a mother mark pattern.

[0075] The material band is pulled through the second exposure device by the conveying mechanism. The path is controlled by the processor to expose the plurality of interval areas in sequence by the laser to obtain a second band segment with a plurality of second patterns. The second pattern includes a plurality of sub-mark patterns corresponding to the plurality of mother mark patterns, and an auxiliary pattern corresponding to the interval area, wherein: The actual coordinates of the mother mark pattern are obtained. The offset relationship between the actual coordinates and the corresponding theoretical coordinates in the set drawing is determined. The theoretical coordinates correspond to the sub-mark pattern. The set path is corrected according to the offset relationship, and the starting coordinates are obtained, so that the alignment accuracy of the second pattern formed by the set path and the corresponding first pattern meets the set standard. The material band is pulled along the first length direction. The laser is controlled to start from the starting coordinates. The first plurality of interval areas are exposed in sequence by the processor to form a plurality of first screen patterns. The plurality of first screen patterns are B1, B2, B3, and Bn in sequence according to the exposure order. The material band is pulled along the second length direction. The second plurality of interval areas are exposed in sequence by the processor to form a plurality of second screen patterns. The first length direction is opposite to the second length direction. The plurality of second screen patterns are C1, C2, C3, and Cn in sequence according to the exposure order. Development: The exposed photoresist film and metal foil material roll are soaked in a developing solution for development. The metal roll after the photoresist film has been exposed is passed through the developing solution tank. The photoresist in the area that has not been cured due to exposure (here, negative photoresist) is dissolved away, leaving the desired fine pattern on the remaining photoresist film. The desired pattern is accurately produced on the photoresist. According to the needs of the FMM product etching process, development can be performed simultaneously on both sides or on one side.

[0076] Wet etching: After the desired fine pattern is formed on the photoresist on the foil, the fine pattern on the photoresist formed by the photoetching process is transferred to the metal foil by a pattern forming process of wet etching to form a fine metal mask plate with the desired fine micro-hole structure. The etching can be double-sided simultaneous etching, or two times of single-sided etching. The metal foil with the developed photoresist film is passed through the etching tank, and the part of the metal foil not covered by the photoresist film (i.e. the area exposed after development and not covered by the photoresist film) is in contact with the etching liquid and etched into the desired micro-holes according to the pattern on the photoresist. After the etching of both sides is completed, the fine micro-pattern on the photoresist is etched on the metal foil to form a FMM strip product corresponding to the original FMM pattern design, which has a fine through-hole pattern on the surface.

[0077] Demasking: After the etching is completed, the photoresist film on the surface of the metal foil is removed. After the etching of both sides is completed, the photoresist film is removed in a demasking machine by dissolving the photoresist film on the etched foil with a chemical liquid to leave the metal foil with the etching pattern to form a FMM patterned metal foil. The micro-holes formed on the FMM product have a size of 48±2µm.

[0078] Cutting / detection analysis: The FMM product with the patterned metal foil after demasking is cut into a fine metal mask plate (FMM) strip product according to the size of the FMM product. The characteristics of the fine metal mask plate are measured and analyzed according to the product specifications. The actual pattern of the mother mark pattern and the daughter mark pattern on the tape is shown in Table 2, Example 1. Figure 13

[0079] Comparative Example Comparative Example 1 The same manufacturing method as in Example 1 is used, except that the exposure is performed using a G8.6 generation exposure machine and a corresponding mask to form a set of FMM product patterns (the first pattern and the second pattern are formed by one-time exposure).

[0080] Table 2 Size characteristics of the large-size fine metal mask plate for eight-generation lines manufactured by different manufacturing processes

[0081] Table 3 Cost advantages and disadvantages of manufacturing fine metal mask plates for eight-generation lines by single-time exposure of large-size exposure equipment with large-size masks according to the present application.

[0082]

[0083] ​According to the results of Table 2 and Table 3, the precision metal mask (FMM) manufactured by the manufacturing method of the application, taking the large-size material belt as the exposure substrate, using the low-generation small-size exposure machine and exposure, through the special splicing exposure method, the existing low-generation exposure machine can complete the exposure of the higher-generation large-size FMM, through the special alignment method and the design of the alignment mark, the high alignment accuracy and exposure consistency can still be obtained during the large-size material belt batch exposure, so as to have the same size and evaporation effect as the FMM formed by the high-generation exposure, and the application has lower cost.

[0084] The above is only a specific embodiment of the present application, but the protection scope of the present application is not limited thereto, and those skilled in the art should understand that the present application includes but is not limited to the contents described in the drawings and the above specific embodiment. Any modification without deviating from the functional and structural principles of the present application will be included in the scope of the claims.

Claims

1. A method for manufacturing a mask, characterized in that: include: exposing a material strip to obtain a first strip segment having a plurality of first patterns, wherein the material strip comprises a strip-shaped foil and a photoresist layer formed on a surface of the strip-shaped foil, a spacer exists between two adjacent first patterns, and the first patterns comprise a plurality of mother mark patterns and a plurality of pixel hole patterns; Controlling the laser to sequentially expose the plurality of spacers along a set path using a processor to obtain a second band segment having a plurality of second patterns, wherein the set path matches a set drawing in the processor, the second patterns including a plurality of sub-mark patterns corresponding to the plurality of parent mark patterns, and auxiliary patterns corresponding to the spacers, and controlling the laser to expose the spacers along the set path includes: Obtaining the actual coordinates of the mother marker graphic; determining an offset relationship between the actual coordinates and corresponding theoretical coordinates in the setting drawing, the theoretical coordinates corresponding to the sub-marker graphics; Correcting the set path according to the offset relationship and obtaining the starting coordinates so that the alignment accuracy of the second graphic formed by the set path and the corresponding first graphic meets the set standard; The laser is controlled to take the starting coordinate as the starting point and expose the corresponding interval area along the set path to obtain the corresponding second pattern.

2. The method according to claim 1, characterized in that The step of determining the offset relationship between the actual coordinates and the corresponding theoretical coordinates in the setting drawing includes: Determining a first offset dimension of the actual coordinate relative to the theoretical coordinate along the length direction of the material strip; Determining a second offset dimension of the actual coordinate relative to the theoretical coordinate along the width direction of the material strip; Determining a deviation value of a distance between two adjacent actual coordinates relative to a distance between two adjacent theoretical coordinates; Determining an offset angle between a direction of a line connecting two adjacent actual coordinates and a direction of a line connecting two corresponding adjacent theoretical coordinates; An offset relationship between the actual coordinates and the theoretical coordinates is established according to the first offset size, the second offset size, the deviation value, and the offset angle.

3. The method according to claim 2, characterized in that The step of correcting the set path according to the offset relationship and obtaining the starting coordinates so that the alignment accuracy of the second graphic formed by the set path and the corresponding first graphic meets the set standard includes: When the deviation value exceeds a set range, the electronic drawing is enlarged or reduced so that the size of the second graphic formed by the set path matches the size of the first graphic; When the first offset size or the second offset size exceeds a set value, the starting coordinate is offset compensated along the length or width direction of the material strip so that the alignment accuracy between the sub-mark pattern formed along the set path and the parent mark pattern meets the set standard; When the offset angle exceeds a set angle, the electronic drawing is rotated so that a rotation angle of a second graphic formed along the set path relative to the first graphic meets a set standard.

4. The method according to claim 1, wherein The material strip has a plurality of first exposure areas for forming a first pattern. The length of the pixel hole pattern is smaller than the length of the first exposure area, so that there is a blank area of ​​the material strip between the edge of the pixel hole pattern and the edge of the first exposure area. The mother mark pattern is located in the blank area of ​​the material strip. The mother mark pattern includes a plurality of first marks and a plurality of second marks, and the first marks and the second marks are symmetrically arranged with respect to the pixel hole pattern, so as to align the second patterns on both sides of the first pattern respectively.

5. The method according to claim 4, characterized in that The spacer includes a first spacer and a second spacer, the first spacer is adjacent to one side of the first graphic, the second spacer is adjacent to the other side of the same first graphic, and the second graphic includes a first mesh graphic corresponding to the first spacer and a second mesh graphic corresponding to the second spacer. The first mark is used for aligning the first mesh pattern with the first pattern, and the second mark is used for aligning the second mesh pattern with the first pattern.

6. The method according to claim 5, characterized in that The step of controlling the laser by a processor to sequentially expose the plurality of spaced areas in a set path includes: Pulling the material strip along a first length direction, and sequentially exposing the plurality of first spaced areas to form a plurality of first mesh patterns by controlling the laser through a processor; The material strip is pulled along the second length direction, and a processor controls the laser to sequentially expose the plurality of second spacer areas to form a plurality of second mesh patterns, wherein the first length direction is opposite to the second length direction.

7. The method according to any one of claims 1 to 6, characterized in that The first pattern further includes at least one center hole and at least two alignment holes, wherein the center hole is located at the center of the pixel hole pattern, and at least one alignment hole is located in the middle of any wide side of the first pattern, so that a line connecting the center hole and the alignment holes has a first direction, and the first direction is consistent with the length direction of the material strip. The second graphic includes a fixing hole located in the middle of the second graphic along the width direction of the material strip, and the angle between the line connecting the center hole and the fixing hole and the first direction forms an offset angle, and the offset angle is used to display the rotation angle of the second graphic formed by exposure relative to the corresponding first graphic.

8. An exposure system, characterized in that: The exposure system includes a conveying mechanism, a first exposure device and a second exposure device, The conveying mechanism is used to drive the material belt to pass through the first exposure device and the second exposure device in sequence, so as to sequentially expose different areas of the material belt to form a plurality of first patterns and second patterns. The first exposure device includes at least one first light source and at least one light mask, the light mask is located on the light output side of the first light source, the light mask includes a mother mark pattern area and a pixel hole pattern area, and is used to expose the material strip to form the mother mark pattern and the pixel hole pattern; The second exposure device includes a detection module, a processor module and at least one laser source. The detection module is used to obtain the actual coordinates of the mother mark pattern. The processor module is configured with a setting drawing. The processor module is used to match the actual coordinates obtained by the detection module with the setting drawing to establish an offset relationship between the actual coordinates and the corresponding theoretical coordinates in the setting drawing. According to the offset relationship, the laser source is controlled to expose the material strip to a set path to form the second pattern.

9. The exposure system according to claim 8, wherein: The first exposure device includes two photomasks and two first light sources for exposing the front and back sides of the material strip. The two photomasks are arranged opposite to each other and spaced apart. The two first light sources are respectively located outside the two photomasks. The space between the two photomasks is used for the material strip to pass through. The second exposure device includes two laser sources that are arranged opposite to each other and spaced apart, so as to expose the front and back sides of the material strip, and the space between the two laser sources is used for the material strip to pass through.

10. The exposure system according to claim 8, wherein: The transmission mechanism includes an unwinding mechanism, a rewinding mechanism and a position control module. The unwinding mechanism and the rewinding mechanism are respectively arranged at the entrance and exit positions of the second exposure device, so that the material strip moves in the second exposure device by unwinding the unwinding mechanism and rewinding the rewinding mechanism. The position control module includes a controller and at least two detectors, wherein the two detectors are respectively located at the unwinding mechanism and the rewinding mechanism, and are used to detect the transmission position of the material strip. The controller is used to control the unwinding mechanism and the rewinding mechanism through the position detected by the detector to realize the rewinding and unwinding of the material strip.

11. The exposure system according to any one of claims 8 to 10, characterized in that The second exposure device includes a motion adjustment mechanism, the laser source is fixedly connected to the motion adjustment mechanism, and the motion adjustment mechanism can move in multiple directions relative to the material strip. The processor module controls the motion adjustment mechanism so that the laser source exposes the material strip along a set path.

12. The exposure system according to any one of claims 8 to 10, characterized in that The exposure system also includes a tensioning mechanism, which is used to provide exposure tension for the material strip. The tensioning mechanism includes a first pinching roller group and a second pinching roller group, respectively located on both sides of the area to be exposed of the first exposure device. The first pinching roller group and the second pinching roller group clamp and transport the material strip to form the set exposure tension.

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