Mask manufacturing method and exposure system

Abstract

The application discloses a method for manufacturing a mask, comprising the following steps: exposing a material belt to obtain a first belt segment with a plurality of first patterns, wherein the material belt comprises a belt-shaped foil and a photoresist layer formed on the surface of the belt-shaped foil, there is a spacing area between two adjacent first patterns, and the first pattern comprises a plurality of mother mark patterns and a plurality of pixel hole patterns; and exposing a plurality of spacing areas in sequence by a processor controlling a laser to set a path, to obtain a second belt segment with a plurality of second patterns, wherein the set path matches a set pattern in the processor, the second pattern comprises a plurality of sub-mark patterns corresponding to the plurality of mother mark patterns, and an auxiliary pattern corresponding to the spacing area. The application further discloses an exposure system.

Description

Technical Field

[0001] This invention relates to a method for manufacturing a photomask and an exposure system. Background Technology

[0002] In order to increase the production capacity of large-size organic light-emitting diode (OLED) display screens, several domestic fine metal mask (FMM) manufacturers are conducting research and development and production of high-generation FMMs.

[0003] Currently, larger-sized parallel exposure machines are commonly used for the overall exposure of high-generation FMMs. However, China currently lacks the production capacity for high-generation FMM exposure machines and their large-sized photomasks, and usually relies on imports from abroad, which are expensive. Furthermore, since the size of the photomask, exposure area, and exposure machine table of high-generation FMMs is larger, it is not compatible with the existing small-sized exposure machines of low-generation FMMs. The small-sized exposure machines and photomasks of low-generation FMMs cannot be improved to achieve high-generation, which further increases the manufacturing cost of high-generation FMMs, thus hindering the cost reduction and market penetration of OLED screens in end products.

[0004] Therefore, developing an alternative to high-generation FMM exposure, enabling existing small-size exposure machines to process and produce high-generation large-size FMMs, improving the efficiency of the exposure machines, and reducing economic costs, is an urgent problem to be solved in this field. Summary of the Invention

[0005] This invention aims to address, to a certain extent, one of the technical problems in related technologies. To this end, this invention provides a photomask manufacturing method and an exposure system.

[0006] To achieve the above objectives, as a first aspect of the present invention, a method for manufacturing a photomask is provided, comprising:

[0007] The material strip is exposed to obtain a first strip segment with multiple first patterns, wherein the material strip includes a strip foil and a photoresist layer formed on the surface of the strip foil, there is a gap between two adjacent first patterns, and the first pattern includes multiple mother mark patterns and multiple pixel hole patterns;

[0008] By controlling a laser to sequentially expose multiple interval regions along a set path using a processor, a second strip segment with multiple second patterns is obtained. The set path matches a set pattern in the processor. The second pattern includes multiple sub-marker patterns corresponding to the multiple parent marker patterns, and auxiliary patterns corresponding to the interval regions. Controlling the laser to expose the interval regions along the set path includes:

[0009] Obtain the actual coordinates of the parent marker graphic;

[0010] Determine the offset relationship between the actual coordinates and the corresponding theoretical coordinates in the set drawing, wherein the theoretical coordinates correspond to the sub-marker graphics;

[0011] The set path is corrected according to the offset relationship, and the starting coordinates are obtained, so that the alignment accuracy between the second graphic formed by the set path and the corresponding first graphic meets the set standard.

[0012] The laser is controlled to expose the corresponding interval area along the set path, starting from the initial coordinates, to obtain the corresponding second pattern.

[0013] Further, the step of determining the offset relationship between the actual coordinates and the corresponding theoretical coordinates in the set drawing includes:

[0014] Determine the first offset dimension of the actual coordinates relative to the theoretical coordinates along the length of the strip;

[0015] Determine the second offset dimension of the actual coordinates relative to the theoretical coordinates along the width direction of the strip;

[0016] Determine the deviation value of the distance between two adjacent actual coordinates relative to the distance between two corresponding adjacent theoretical coordinates;

[0017] Determine the offset angle between the direction of the line connecting two adjacent actual coordinates and the direction of the line connecting two corresponding adjacent theoretical coordinates;

[0018] Based on the first offset dimension, the second offset dimension, the deviation value, and the offset angle, the offset relationship between the actual coordinates and the theoretical coordinates is established.

[0019] Further, the step of correcting the set path according to the offset relationship and obtaining the starting coordinates, so that the alignment accuracy between the second graphic formed by the set path and the corresponding first graphic meets the set standard, includes:

[0020] If the deviation value exceeds the set range, the electronic drawing is enlarged or reduced so that the size of the second graphic formed by the set path matches the size of the first graphic.

[0021] If the first offset dimension or the second offset dimension exceeds the set value, the starting coordinate is offset and compensated along the length or width of the strip so that the alignment accuracy between the sub-marker graphic formed by the set path and the parent marker graphic meets the set standard.

[0022] If the offset angle exceeds a set angle, the electronic drawing is rotated so that the rotation angle of the second graphic formed along the set path relative to the first graphic meets the set standard.

[0023] Furthermore, the tape has multiple first exposure areas for forming a first pattern, and the length of the pixel hole pattern is less than the length of the first exposure area, such that there is a tape blank area between the edge of the pixel hole pattern and the edge of the first exposure area, and the mother mark pattern is located in the tape blank area.

[0024] The mother marker graphic includes multiple first markers and multiple second markers, with the first markers and second markers symmetrically arranged about the pixel hole graphic to align the second graphics on both sides of the first graphic.

[0025] Furthermore, the interval region includes a first interval region and a second interval region. The first interval region is adjacent to one side of the first pattern, and the second interval region is adjacent to the other side of the same first pattern. The second pattern includes a first mesh pattern corresponding to the first interval region and a second mesh pattern corresponding to the second interval region.

[0026] The first mark is used for the alignment of the first mesh pattern with the first pattern, and the second mark is used for the alignment of the second mesh pattern with the first pattern.

[0027] Furthermore, the step of controlling the laser to sequentially expose the multiple interval regions via a set path includes:

[0028] The material strip is pulled along the first length direction, and the laser controlled by the processor is used to expose multiple first interval areas in sequence to form multiple first halftone patterns;

[0029] The material strip is pulled along the second length direction, and the laser is controlled by the processor to expose multiple second interval areas in sequence to form multiple second halftone patterns, wherein the first length direction is opposite to the second length direction.

[0030] Furthermore, the first pattern also includes at least one central hole and at least two alignment holes. The central hole is located at the center of the pixel hole pattern, and at least one alignment hole is located at the center of any wide side of the first pattern, such that the line connecting the central hole and the alignment holes has a first direction, which is consistent with the length direction of the strip.

[0031] The second pattern includes a fixing hole located at the middle of the second pattern along the width direction of the strip. The line connecting the center hole and the fixing hole forms an offset angle with the first direction. The offset angle is used to indicate the rotation angle of the exposed second pattern relative to the corresponding first pattern.

[0032] As a second aspect of this application, an exposure system is disclosed, the exposure system comprising a conveying mechanism, a first exposure device, and a second exposure device.

[0033] The conveying mechanism is used to drive the material belt through the first exposure device and the second exposure device in sequence, so as to expose different areas of the material belt in sequence to form multiple first and second patterns.

[0034] The first exposure apparatus includes at least one first light source and at least one photomask. The photomask is located on the light-emitting side of the first light source. The photomask includes a master mark pattern area and a pixel hole pattern area for exposing the strip to form the master mark pattern and the pixel hole pattern.

[0035] The second exposure device includes a detection module, a processor module, and at least one laser source. The detection module is used to acquire the actual coordinates of the master mark graphic. The processor module is configured with a set drawing. The processor module is used to match the actual coordinates acquired by the detection module with the set drawing to establish the offset relationship between the actual coordinates and the corresponding theoretical coordinates in the set drawing. Based on the offset relationship, the laser source is controlled to expose the material strip along a set path to form the second graphic.

[0036] Furthermore, the first exposure apparatus includes two photomasks and two first light sources for exposing the front and back sides of the strip. The two photomasks are positioned opposite each other and spaced apart. The two first light sources are located outside the two photomasks, and the gap between the two photomasks is used for the strip to pass through.

[0037] The second exposure apparatus includes two opposing and spaced-apart laser sources for exposing the front and back sides of the strip, with the space between the two laser sources used for feeding the strip through.

[0038] Furthermore, the conveying mechanism includes an unwinding mechanism, a rewinding mechanism, and a position control module.

[0039] The unwinding mechanism and the rewinding mechanism are respectively located at the inlet and outlet of the second exposure device, so that the material strip moves within the second exposure device through the unwinding of the unwinding mechanism and the rewinding of the rewinding mechanism.

[0040] The position control module includes a controller and at least two detectors. The two detectors are located at the unwinding mechanism and the winding mechanism, respectively, and are used to detect the transmission position of the material strip. The controller is used to control the unwinding mechanism and the winding mechanism based on the position detected by the detectors, so as to realize the winding and unwinding of the material strip.

[0041] Furthermore, the second exposure device includes a motion adjustment mechanism, the laser source is fixedly connected to the motion adjustment mechanism, the motion adjustment mechanism is capable of moving in multiple directions relative to the material strip, and the processor module controls the motion adjustment mechanism so that the laser source exposes the material strip along a set path.

[0042] Furthermore, the exposure system also includes a tensioning mechanism for providing exposure tension to the strip. The tensioning mechanism includes a first clamping roller group and a second clamping roller group located on both sides of the area to be exposed in the first exposure device. The first clamping roller group and the second clamping roller group clamp and convey the strip to form a set exposure tension.

[0043] The method for manufacturing photomasks provided by this invention is particularly suitable for precision metal photomasks (FMMs). Using large-size strips as the exposure substrate, a unique long-roll splicing exposure method is employed. This method combines existing low-generation exposure machines with laser exposure to complete the exposure of higher-generation, large-size FMMs. Alignment marks establish an offset relationship between the first and second patterns, ensuring that the alignment accuracy of the first and second patterns meets requirements, making the strip splicing exposure method of this application more accurate. Furthermore, it maintains high alignment accuracy and exposure consistency during batch exposure of the strips, resulting in FMMs with the same size and vapor deposition effect as those formed by high-generation exposure. Moreover, this invention has a lower cost.

[0044] These features and advantages of the present invention will be disclosed in detail in the following specific embodiments and accompanying drawings. The preferred embodiments or means of the present invention will be shown in detail in conjunction with the accompanying drawings, but are not intended to limit the technical solutions of the present invention. In addition, each of these features, elements and components appearing in the following text and drawings is a plurality of, and different symbols or numbers are used for convenience of representation, but all represent parts with the same or similar construction or function. Attached Figure Description

[0045] The present invention will be further described below with reference to the accompanying drawings:

[0046] Figure 1 This is a flowchart of the traditional large-size precision metal photomask manufacturing process;

[0047] Figure 2(a) is a process flow diagram of the photomask manufacturing method of the present invention;

[0048] Figure 2(b) is a process flow diagram of the photomask manufacturing method of the present invention;

[0049] Figure 3 This is a schematic diagram of one embodiment of the exposure system of the present invention;

[0050] Figure 4 This is the alignment form of the mother marker graphic and the child marker graphic of the present invention;

[0051] Figure 5 This is a schematic diagram of one embodiment of the alignment mark of the present invention;

[0052] Figure 6 This is a schematic diagram of one embodiment of the photomask of the present invention;

[0053] Figure 7 This is a schematic diagram of the offset relationship of the present invention;

[0054] Figure 8(a) is a schematic diagram of one embodiment of the offset relationship in the alignment mark of the present invention;

[0055] Figure 8(b) is a schematic diagram of one embodiment of the offset relationship in the alignment mark of the present invention;

[0056] Figure 8(c) is a schematic diagram of one embodiment of the offset relationship in the alignment mark of the present invention;

[0057] Figure 9 This is a schematic diagram of the second figure of the present invention;

[0058] Figure 10 This is a schematic diagram of the misalignment angle of the present invention;

[0059] Figure 11(a) is a schematic diagram of the pattern of the material strip after exposure according to the present invention;

[0060] Figure 11(b) is a schematic diagram of the pattern of the material strip after exposure according to the present invention;

[0061] Figure 12 This is a flowchart illustrating a specific implementation method for the photomask manufacturing method of the present invention;

[0062] Figure 13 This is an actual photograph of the alignment marks of the mask plate of the present invention.

[0063] Explanation of reference numerals in the attached figures

[0064] 1: Exposure system; 2: Strip material; 10a: First unwinding mechanism; 10b: First winding mechanism; 103: First pinch roller group; 104: Second pinch roller group; 101: Photomask; 10: First exposure device; 11a: Unwinding mechanism; 11b: Winding mechanism; 11: Second exposure device; 110: Laser source;

[0065] 1012’: Mother mark pattern; 2001’: Sub - mark pattern; 1011: Pixel hole area; 1012: Mother mark area; 1013: Central hole area; 1014: Alignment hole area;

[0066] 200a: Ideal second exposure area; 200b: Set second exposure area; 2001: Set sub - mark area; θ: Offset angle;

[0067] 201: First mesh pattern; 202: Second mesh pattern; 2002: Fixed hole area; 2003: Auxiliary stretching area; 2004: Overlap area;

[0068] 1013’: Central hole; 1014’: Alignment hole; α: Misalignment angle; 1011’: Pixel hole pattern; 2002’: Fixed hole. Detailed implementation mode

[0069] The embodiments of the present invention will be described in detail below. The examples of the embodiments are shown in the accompanying drawings, where the same or similar reference numerals represent the same or similar elements or elements with the same or similar functions throughout. Based on the embodiments in the implementation mode, it is intended to explain the present invention and should not be construed as a limitation of the present invention.

[0070] As used herein, the phrase "in one embodiment" or "instance" or "example" means that a particular feature, structure, or characteristic described in connection with the embodiment itself can be included in at least one embodiment of the disclosure. The appearances of the phrase "in one embodiment" in various places in the specification do not necessarily refer to the same embodiment.

[0071] After research by the inventor, considering the segmentation efficiency of a single - piece screen, the current 6th - generation active - matrix organic light - emitting diode panel (Active - matrix organic light - emitting diode, AMOLED) production line (G6, glass backplane size 1500*1850mm) is being iteratively updated to the 8.6th - generation AMOLED production line (G8.6, glass backplane size 2290*2620mm). At present, the production and supply of FMM for G6 in China has just started to get on track in the past two years, while the production of FMM supporting the G8.6 AMOLED production line is still in its infancy. In response to the trend of the international industry, several domestic panel factories have decided to invest in the eighth - generation line (such as G8.6H) to produce medium - sized AMOLED displays or increase the production of small - sized smartphone displays. The production line investment cost is high, and the cost of the precision metal mask required for manufacturing AMOLED display products by evaporation is also very high. As the size of the AMOLED display substrate increases, the yellow - light equipment required for manufacturing FMM needs to be correspondingly upgraded to the eighth - generation size. This has led to a significant increase in the manufacturing cost of FMM.

[0072] Table 1 shows a comparison of the sizes of current sixth-generation AMOLED production lines and the new eighth-generation lines.

[0073] Table 1. Examples of relevant dimensions for AMOLED displays and FMM products manufactured on the sixth-generation (G6H) and eighth-generation (G8.6H) lines.

[0074]

[0075] Traditionally, as AMOLED display manufacturing generations have progressed, the size of the glass substrate has increased, thus requiring larger equipment for manufacturing the precision metal masks needed. A traditional manufacturing process flow diagram is shown below. Figure 1 As shown.

[0076] The patterns designed on the precision metal mask products are transferred onto the photoresist film in a single exposure using a large-size eighth-generation exposure machine and a large-size eighth-generation photomask.

[0077] To address the aforementioned issues, this invention proposes a low-cost manufacturing method for large-size f-masks (FMMs) required for high-generation AMOLED lines. This method utilizes a smaller, lower-generation production line, employing innovative design and processes to manufacture large-size precision metal masks. This approach allows for the production of high-quality precision metal masks with low-cost equipment and production. The resulting large-size precision metal masks are suitable for manufacturing high-quality precision metal mask strips required for high-generation (G8 half-panel or larger) AMOLED evaporation deposition. When used as shadow masks for AMOLED thermal evaporation deposition, the manufactured precision metal masks exhibit excellent performance.

[0078] As a first aspect of the present invention, as shown in Figures 2(a) and 2(b), a method for manufacturing a photomask is provided, comprising:

[0079] S100. Expose the material strip to obtain a first strip segment with multiple first patterns, wherein the material strip includes a strip foil and a photoresist layer formed on the surface of the strip foil, there is a gap between two adjacent first patterns, and the first pattern includes multiple mother mark patterns and multiple pixel hole patterns.

[0080] S200: The processor controls the laser to expose multiple interval areas sequentially along a set path to obtain a second strip with multiple second patterns, wherein the set path matches the set pattern in the processor, and the second pattern includes multiple sub-marker patterns corresponding to the multiple parent marker patterns, and auxiliary patterns corresponding to the interval areas.

[0081] Controlling the laser to expose the interval region along a set path includes:

[0082] S201. Obtain the actual coordinates of the parent marker graphic;

[0083] S202. Determine the offset relationship between the actual coordinates and the corresponding theoretical coordinates in the set drawing, wherein the theoretical coordinates correspond to the sub-marker graphics;

[0084] S203. Correct the set path according to the offset relationship and obtain the starting coordinates so that the alignment accuracy between the second graphic formed by the set path and the corresponding first graphic meets the set standard.

[0085] S204. Control the laser to expose the corresponding interval area along the set path, starting from the initial coordinates, to obtain the corresponding second pattern.

[0086] The method for manufacturing photomasks provided by this invention is particularly suitable for precision metal photomasks (FMMs). Using large-size strips as the exposure substrate, a unique long-roll splicing exposure method is employed. This method combines existing low-generation exposure machines with laser exposure to complete the exposure of higher-generation, large-size FMMs. Alignment marks establish an offset relationship between the first and second patterns, ensuring that the alignment accuracy of the first and second patterns meets requirements, making the strip splicing exposure method of this application more accurate. Furthermore, it maintains high alignment accuracy and exposure consistency during batch exposure of the strips, resulting in FMMs with the same size and vapor deposition effect as those formed by high-generation exposure. Moreover, this invention has a lower cost.

[0087] In step S100, as an optional implementation, such as Figure 3 , Figure 6 As shown in Figures 11(a) and 11(b), the material strip 2 is pulled and conveyed along the unwinding direction, so that the material strip 2 is exposed sequentially along the length direction to form multiple first patterns. The multiple first patterns are A1, A2, A3 to An in the exposure order. This application does not make a special limitation on the number of first patterns exposed, as long as it meets the maximum length of the material that the equipment can pull. That is, n in An is not limited, and can be A4, or A6, A8, A12, etc. In some embodiments, the conveying mechanism includes a first unwinding mechanism 10a, a first winding mechanism 10b and a position control unit. The first exposure device 10 for exposing to form the first patterns is located between the first unwinding mechanism 10a and the first winding mechanism 10b, so that the material strip 2 can move in the first exposure device 10 through being unwound and wound, thereby exposing to form multiple first patterns sequentially along the length direction.

[0088] The first pattern can be exposed using either a contact photomask or a photomask-less laser exposure. Preferably, since the first pattern includes pixel hole patterns, higher precision is required. The linewidth precision of contact photomask exposure is lower than that of laser exposure; therefore, contact photomask exposure is preferred. The photomask 101 corresponding to the first pattern is, for example... Figure 3 , Figure 6 As shown in Figure 11(a), the photomask 101 is provided with a pixel hole area 1011, a mother mark area 1012, a alignment hole area 1014, and a center hole area 1013. Thus, the photomask 101 is used to expose the material strip 2 to form corresponding pixel hole patterns 1011', mother mark patterns 1012', alignment holes 1014', and center holes 1013'. This application does not impose special limitations on the shape of the mother mark pattern 1012' in the first pattern, as long as it matches the sub-mark pattern 2001' to form an alignment mark. Figure 4 and Figure 5 As shown.

[0089] In step S200, the step of determining the offset relationship between the actual coordinates and the corresponding theoretical coordinates in the set drawing, as an optional implementation, specifically includes:

[0090] Determine the first offset dimension of the actual coordinates relative to the theoretical coordinates along the length of the strip;

[0091] Determine the second offset dimension of the actual coordinates relative to the theoretical coordinates along the width direction of the strip;

[0092] Determine the deviation of the distance between two adjacent actual coordinates relative to the distance between the corresponding two adjacent theoretical coordinates;

[0093] Determine the offset angle between the direction of the line connecting two adjacent actual coordinates and the direction of the line connecting two corresponding adjacent theoretical coordinates;

[0094] Based on the first offset dimension, the second offset dimension, the deviation value, and the offset angle, establish the offset relationship between the actual coordinates and the theoretical coordinates.

[0095] Here we need to explain how the offset relationship is established, based on... Figure 7 As shown in Figures 8(a) to 8(c), after the ribbon has undergone multiple first pattern exposures, it has multiple ideal second exposure areas 200a for exposing the second pattern. However, during the second pattern exposure, problems such as ribbon position offset, laser position offset, transmission position error, and processor conversion error may occur, causing a deviation between the set second exposure area 200b and the ideal second exposure area 200a. Figure 7As shown, the specific manifestation is the alignment offset between the sub-marker area 2001 and the parent mark graphic 1012', as shown in Figures 8(a) to 8(c). The alignment offset can be divided into expansion and contraction caused by the sub-marker area 2001 shrinking or enlarging relative to the parent mark graphic 1012', translation caused by the offset distance of the sub-marker area 2001 relative to the parent mark graphic 1012' along the horizontal or vertical direction, and rotation offset caused by the sub-marker area 2001 rotating relative to the parent mark graphic 1012' by a specific angle. Therefore, the offset relationship established by this application based on the actual coordinates and the theoretical coordinates of the sub-marker graphic in the electronic drawing is mainly determined by the above situations.

[0096] In some embodiments, by measuring the distance between two adjacent actual coordinates, the distance between two adjacent theoretical coordinates is determined, and the two distances are compared to see if there is a deviation. If there is a deviation, it means that the offset relationship between the actual coordinates and the theoretical coordinates includes a scaling relationship. For example, any actual coordinate is compared with the corresponding theoretical coordinate. If the horizontal and vertical coordinates of the two are inconsistent, it means that the offset relationship between the actual coordinates and the theoretical coordinates includes a translation relationship. For example, the direction of the line connecting two adjacent actual coordinates is obtained as the first connecting direction. The direction of the line connecting two adjacent theoretical coordinates is compared with the first connecting direction to see if there is a deviation. If there is a deviation, the angle between the two connecting directions is the offset angle θ, as shown in Figure 8(c). This means that the offset relationship between the actual coordinates and the theoretical coordinates includes a rotational offset relationship.

[0097] The actual offset relationship is obtained by combining the above multiple positional relationships.

[0098] Step S203 includes:

[0099] If the deviation exceeds the set range, the size of the second graphic formed by the set path is matched with the size of the first graphic by enlarging or reducing the electronic drawing.

[0100] If the first offset dimension or the second offset dimension exceeds the set value, the starting coordinate is offset along the length or width of the strip to ensure that the alignment accuracy of the sub-marker graphic formed by the set path and the parent marker graphic meets the set standard.

[0101] If the offset angle exceeds the set angle, the electronic drawing is rotated so that the rotation angle of the second graphic formed by the set path relative to the first graphic meets the set standard.

[0102] This application does not impose any special limitation on the position of the mother mark pattern 1012' in the first pattern, as long as it does not affect the pixel hole pattern 1011'. As a specific implementation, as shown in Figures 11(a) and 11(b), the tape has multiple first exposure areas (not shown) for forming the first pattern. The length of the pixel hole pattern is less than the length of the first exposure area, so that there is a tape blank area between the edge of the pixel hole pattern and the edge of the first exposure area. The mother mark pattern is located in the tape blank area. The mother mark pattern includes multiple first marks and multiple second marks. The first marks and second marks are symmetrically arranged about the pixel hole pattern to be used to align the second patterns on both sides of the first pattern respectively.

[0103] Typically, the longer strip 2 has a longer exposure length relative to the cut FMM substrate, making it more prone to alignment misalignment. Moreover, the degree of alignment misalignment gradually increases with the length. Preferably, it is necessary to align with the corresponding mother mark pattern 1012' before exposing the second pattern in each interval area.

[0104] This application does not impose any special limitations on the shape of the mother mark pattern 1012', as long as it is a symmetrical pattern that allows for precise alignment. Preferably, the mother mark pattern 1012' includes at least one of a circle, a square, and a cross shape. The mark size depends on the design of the optical sensor of the exposure system and the size of the inspection area. It is generally in the size range of 500µm to 3500µm.

[0105] In some embodiments, the master mark pattern 1012' includes at least four first marks. At least two first marks are spaced apart on one long side near the material strip 2, and at least two first marks are spaced apart on the other long side near the material strip 2. This ensures that the spacing areas on both sides of the first pattern have the same alignment, preventing the second pattern exposure of the spacing areas on both sides from shifting due to changes in the marks. When exposing a longer material strip 2, the long side often exhibits a wavy edge on one side. Therefore, preferably, at least two first marks are provided on each long side, which facilitates the detection, alignment, and position correction of each long side. The distance between adjacent first marks in the length direction varies depending on the FMM product design, typically between 2 mm and 70 mm. Preferably, the distance between two adjacent first marks is twice or more (≥2D) the field of view diameter (D) of the optical detection sensor. The maximum distance between adjacent first marks in the width direction is only slightly smaller than the width of the material strip, between 50 mm and 720 mm.

[0106] To meet the requirement of exposing high-generation, large-size FMM substrates using a low-generation, small-exposure machine, this application employs a spliced ​​exposure method. This involves exposing the FMM pixel hole pattern 1011' separately from the auxiliary patterns on either side used for screen bonding. This allows the pixel hole pattern of the FMM to be expanded onto the entire photomask, such as... Figure 3 As shown in Figure 11, it meets the requirements of high-generation, large-size FMM.

[0107] Typically, auxiliary graphics are placed on both sides of the first graphic, as shown in Figure 11. The interval area includes a first interval area and a second interval area. The first interval area is adjacent to one side of the first graphic, and the second interval area is adjacent to the other side of the same first graphic. The second graphic includes a first mesh graphic corresponding to the first interval area and a second mesh graphic corresponding to the second interval area. A first mark is used for the alignment of the first mesh graphic with the first graphic, and a second mark is used for the alignment of the second mesh graphic with the first graphic.

[0108] The first and second mesh graphics of this application are as follows: Figure 9 As shown, the first mesh pattern 201 includes a fixing hole area 2002, an auxiliary stretching area 2003, and an overlap area 2004. The second mesh pattern 202 also includes a fixing hole area 2002, an auxiliary stretching area 2003, and an overlap area 2004. The first mesh pattern 201 and the second mesh pattern 202 are arranged in a mirror symmetrical arrangement with the first mesh pattern in the middle as the center on both sides.

[0109] This application does not impose any special restrictions on the exposure order of the first halftone pattern and the second halftone pattern. For example, after the first pattern is exposed, multiple first halftone patterns can be exposed in sequence to form multiple second halftone patterns in sequence. Alternatively, a first halftone pattern can be exposed first, followed by the exposure of the adjacent or corresponding second halftone pattern, and the above steps can be repeated until all second halftone patterns are exposed.

[0110] As an optional implementation, the step of controlling the laser to sequentially expose multiple interval regions via a set path includes:

[0111] The material strip is pulled along the first length direction, and the laser is controlled by the processor to expose multiple first interval areas in sequence to form multiple first screen patterns; as shown in Figure 11(b), the multiple first screen patterns are B1, B2, B3 to Bn in the exposure order.

[0112] The material strip is pulled along the second length direction, and the laser, controlled by the processor, sequentially exposes multiple second interval areas to form multiple second halftone patterns. The first length direction is opposite to the second length direction, as shown in Figure 11(b). The multiple second halftone patterns are C1, C2, C3 to Cn in the exposure order. The above exposure method can improve the exposure efficiency while maintaining the required exposure accuracy.

[0113] Typically, a single alignment mark can only detect offsets along the length or width direction. While this is sufficient for the alignment accuracy of FMM substrates that have been cut and shaped, relying solely on a single alignment mark to determine the offset in the length or width direction is far from adequate for long-scale strips 1. Therefore, this application adds the angular relationship between adjacent marks, thereby enabling the detection and correction of the angular deflection of the strip 1. As a specific implementation, such as Figure 10 As shown, the first pattern also includes at least one central hole and at least two alignment holes. The central hole is located at the center of the pixel hole pattern, and at least one alignment hole is located at the middle of any wide side of the first pattern, such that the line connecting the central hole and the alignment hole has a first direction, which is consistent with the length direction of the material strip. The second pattern includes a fixing hole located at the middle of the second pattern along the width direction of the material strip. The angle between the line connecting the central hole and the fixing hole and the first direction forms a misalignment angle, which is used to indicate the rotation angle of the exposed second pattern relative to the corresponding first pattern. The misalignment angle of this application can be detected after exposure forming. Ideally, the fixing hole 2002' is located on the line connecting the central hole 1013' and the alignment hole 1014'. However, due to unavoidable precision errors, the angle between the lines connecting the central hole 1013' and the alignment hole 1014' and the fixing hole 2002' respectively forms a misalignment angle, and the misalignment angle does not exceed a set angle. The misalignment angle determined by the center hole 1013', alignment hole 1014' and fixing hole 2002' can be used to monitor the angle of the exposed strip 2. When the misalignment angle meets the angle range, it means that the exposure alignment accuracy of the strip 2 is qualified. When it does not meet the angle range, the strip 2 is reworked, thereby improving the processing quality and process stability of the product.

[0114] The method for calculating the misalignment angle is as follows:

[0115] α = (△y / 2πr) * 360°, where △y is the distance between the fixed hole 2002' formed by actual exposure and the line connecting the center hole 1013' and the alignment hole 1014', and r is the distance between the center hole 1013' and the fixed hole 2002'.

[0116] It is worth noting that the misalignment angle of the graphic area defines the degree to which the graphic of a single product may be misaligned when it is produced by multiple exposures. This is different from the alignment mark. The misalignment angle of this invention is a product feature formed by the alignment method of this invention. Currently, only this invention uses the misalignment angle method for calibration and monitoring.

[0117] This application can use single-sided exposure or double-sided exposure. Preferably, the material strip 1 has a front side and a back side, and both the front side and the back side are coated with a photoresist layer. Double-sided exposure is performed on the front side and the back side of the material strip 1 to form a front pattern and a back pattern respectively. The double-sided exposure method can further improve the exposure efficiency.

[0118] Depending on whether the photoresist or dry film is used, the exposure energy is preferably between 20 mJ / cm2 and 200 mJ / cm2, and the illuminance uniformity within the exposure area is within 5%.

[0119] This invention focuses on ensuring and improving the precision alignment accuracy of multiple pattern exposures. It requires improvements to the equipment, as well as the design of detailed and precise alignment marks, alignment processes, and adjustments to the secondary pattern data to achieve low-cost, high-quality product manufacturing.

[0120] The manufacturing method of this application further includes: developing and etching a strip having multiple first and second patterns to obtain a photomask.

[0121] like Figure 12 The diagram illustrates a specific manufacturing method of the present invention, which includes:

[0122] S1001. High flatness Invar metal coils can be produced by thinning.

[0123] S1002. Cleaning of metal coils: Clean the surface of high-flatness metal coils.

[0124] S1003, Surface treatment of metal coils, removing contaminants and oxide layers from the surface of metal foils and optimizing the thickness of the foil coils;

[0125] S1004. Apply photoresist film: Apply the photoresist film to the cleaned metal roll. If it is necessary to enhance the adhesion, vacuum bonding, high temperature baking, or use an interface bonding agent can be used.

[0126] S1005. Multiple first patterns are sequentially exposed on the surface of material strip 1 to form a plurality of first patterns;

[0127] S1006. Expose multiple interval areas sequentially to form multiple first halftone patterns;

[0128] S1007. Multiple interval areas are exposed sequentially to form multiple second halftone patterns; depending on the required resolution and accuracy of the manufactured pattern, the three exposures of the above three patterns can use the same exposure system or a combination of different exposure systems. The preferred exposure system is a combination of contact mask exposure and laser direct writing exposure. Since multiple exposures are used to divide the complete pattern of the large-size FMM product into three parts, in order to reduce the mutual offset and misalignment that may occur when different pattern areas are exposed and patterned, an alignment mark group is used in the FMM product design, and its pattern can be diverse.

[0129] S1008. Developing the aforementioned strip: Specifically, the exposed photoresist film and metal foil roll are immersed in a developing solution for development, precisely fabricating the desired pattern onto the photoresist. Since photoresist is a photosensitive material, the structure and chemical properties of the areas exposed to light differ from those of the areas not exposed to light. This characteristic can be utilized for development. After all patterns on the foil roll have undergone three exposures, the roll is moved to the developing section. The exposed photoresist film is passed through a developing bath, dissolving the photoresist in areas that have not cured due to exposure (this is an example of negative photoresist), leaving the desired fine pattern on the remaining photoresist film.

[0130] S1009. Precision etching can be single-sided or double-sided. In some embodiments, after forming the desired precision pattern on the photoresist on the foil, a wet etching pattern forming process is used to transfer the precision pattern on the photoresist formed by the photolithography process onto the metal foil, forming a precision metal mask with the desired precision micro-hole structure. Etching can be double-sided etching simultaneously, or single-sided etching performed in two stages. The developed photoresist film and the metal foil roll are passed through an etching tank, and the portion of the metal foil not covered by the photoresist film comes into contact with the etching solution and is etched. After etching on both sides, the precision micro-pattern on the photoresist is etched onto the metal foil, forming the corresponding micro-hole pattern.

[0131] S1010, Removal, specifically, removal of the photoresist film. After etching on both sides, the photoresist film is removed from the etched foil roll in a removal machine, leaving the metal foil roll with the etched pattern, to form a metal foil roll with FMM patterning. The micropore size produced by wet etching ranges from 10µm to 200µm.

[0132] S1011. Cutting and Inspection: Specifically, the patterned FMM finished product metal foil roll after the film removal is cut into FMM strips according to the set FMM product size. The finished precision metal mask strips are then subjected to quality inspection and analysis according to product specifications.

[0133] S1012. Product packaging and shipping: Specifically, the FMM strips that have passed inspection are packaged and shipped to the customer.

[0134] As a second aspect of the invention, an exposure system is disclosed, such as Figure 3 As shown, the exposure system 1 includes a conveying mechanism, a first exposure device 10, and a second exposure device 11. The conveying mechanism is used to drive the material belt through the first exposure device 10 and the second exposure device 11 in sequence, so as to expose different areas of the material belt in sequence to form multiple first and second patterns.

[0135] The first exposure apparatus 10 includes at least one first light source and at least one photomask. The photomask is located on the light-emitting side of the first light source. The photomask includes a master mark pattern area and a pixel hole pattern area for exposing the strip to form the master mark pattern and the pixel hole pattern.

[0136] The second exposure device 11 includes a detection module, a processor module, and at least one laser source 110. The detection module is used to acquire the actual coordinates of the master mark pattern. The processor module is equipped with a set drawing. The processor module is used to match the actual coordinates acquired by the detection module with the set drawing to establish the offset relationship between the actual coordinates and the corresponding theoretical coordinates in the set drawing. Based on the offset relationship, the laser source is controlled to expose the material strip along a set path to form the second pattern.

[0137] As an optional implementation, the first exposure apparatus includes two photomasks and two first light sources for exposing the front and back sides of the material strip. The two photomasks are positioned opposite each other and spaced apart. The two first light sources are located outside the two photomasks, and the gap between the two photomasks is used for the material strip to pass through. In some embodiments, the first light source can be a high-pressure UV lamp with a main wavelength of 365nm (I line), 405nm (h line), or 436nm (g line). The exposure area is preferably 1300*600mm; the initial illuminance of the light source is 12mW / cm2 or higher, and the illuminance uniformity is within ±8%.

[0138] The second exposure apparatus includes laser sources arranged opposite each other and spaced apart for exposing the front and back sides of the strip, with the gap between the two laser sources used for feeding the strip through.

[0139] As an optional implementation, the conveying mechanism includes an unwinding mechanism 11a, a winding mechanism 11b, and a position control module. The unwinding mechanism 11a and the winding mechanism 11b are respectively located at the inlet and outlet positions of the second exposure device 11, allowing the material strip to move within the second exposure device 11 through the unwinding of the unwinding mechanism and the winding of the winding mechanism. The position control module includes a controller and at least two detectors, located at the unwinding mechanism and the winding mechanism respectively, for detecting the conveying position of the material strip. The controller controls the unwinding mechanism and the winding mechanism based on the position detected by the detectors, thereby realizing the winding and unwinding of the material strip. It is understood that the first unwinding mechanism and the second unwinding mechanism can also have the same structure as the unwinding mechanism and the winding mechanism.

[0140] In some embodiments, the unwinding mechanism and the winding mechanism specifically include a roll mounting shaft and a rotating mechanism. The rotating mechanism can be driven to rotate by a driving mechanism so that the roll mounting shaft can wind, wind, or unwind the roll. The tension adjusting mechanism is used to apply different or the same pressure to both sides of the roll on the roll mounting shaft so that the tension of the roll can be adjusted and changed.

[0141] In some embodiments, the unwinding mechanism and the rewinding mechanism are fed to the second exposure device by a roller conveyor, preferably with a single feeding amount between 10 mm and 1500 mm.

[0142] In one specific embodiment, the exposure system 1 further includes a tensioning mechanism for providing exposure tension to the conveyor belt. The tensioning mechanism includes a first clamping roller group 103 and a second clamping roller group 104 located on either side of the area to be exposed in the first exposure device. The first clamping roller group 103 and the second clamping roller group 104 clamp and convey the conveyor belt to form a set exposure tension. The set exposure tension is preferably between 10N and 150N.

[0143] Preferably, the tension of the pinch roller is between 20N and 80N. In addition, the material belt 2 can also adjust the tilt angle along the transmission direction by means of the tensioning mechanism.

[0144] This application does not specifically limit the type of the first exposure apparatus; for example, it can be a roll-to-roll contact exposure machine or a roll-to-roll proximity exposure machine. Preferably, a roll-to-roll contact exposure machine is used. This equipment precisely aligns a strip with photoresist film on both sides with a photomask, and then transfers the pattern on the photomask onto the photoresist layers on both sides (or one side) using vacuum contact exposure. This equipment can continuously expose and process an entire roll of strip in the following sequence: strip unwinding, strip feeding, precise photomask alignment, exposure, and strip rewinding. The alignment accuracy of the front and back sides of the photomask can be within 1 μm, preferably within 0.5 μm, and the strip conveying position accuracy is within 200 μm.

[0145] Preferably, the second exposure device includes laser direct-write exposure. The second exposure device includes a motion adjustment mechanism, and the laser source is fixedly connected to the motion adjustment mechanism. The motion adjustment mechanism can move in multiple directions relative to the material strip, and the processor module controls the motion adjustment mechanism to make the laser source expose the material strip along a set path.

[0146] The features and performance of the present invention will be further described in detail below with reference to embodiments.

[0147] Example

[0148] Example 1

[0149] A method for manufacturing FMM,

[0150] Production of high-flatness Invar metal foil rolls: using iron-nickel alloy foil with high flatness and low coefficient of thermal expansion as raw material. The highest protrusion height inside the foil is less than 0.6mm, and the edge ripple height on both sides is less than 0.8mm.

[0151] Surface cleaning: Clean the high-flatness metal foil roll with a cleaning agent to remove surface dust, contaminants, residual grease, etc.

[0152] Surface treatment: After cleaning, the metal coil is passed through a chemical acid solution to remove the oxide layer on the surface of the metal foil, reduce surface defects such as rolling marks, scratches, pits, etc., and optimize the thickness of the foil coil.

[0153] Applying photoresist film: Apply the photoresist film to both sides of the surface-treated metal roll. To enhance adhesion, vacuum bonding, high-temperature baking, or the use of an interface bonding agent can be employed.

[0154] Exposure: The roll material is unwound and wound up by a conveying mechanism to obtain a strip. The conveying mechanism pulls the strip along the length direction of the strip and transmits it along the first length direction, so that the strip passes through the photomask of the first exposure device for contact exposure along the length direction, so as to form multiple first patterns in sequence. The multiple first patterns are A1, A2, A3 to An in the exposure order. The first pattern includes multiple pixel hole patterns and mother mark patterns.

[0155] A conveyor belt is pulled through a second exposure device, and a processor controls a laser to sequentially expose multiple interval zones along a set path, resulting in a second belt segment with multiple second patterns. The second patterns include multiple sub-marker patterns corresponding to multiple parent marker patterns, and auxiliary patterns corresponding to the interval zones, wherein:

[0156] Obtain the actual coordinates of the parent graphic;

[0157] Determine the offset relationship between the actual coordinates and the corresponding theoretical coordinates in the drawing, and establish the correspondence between the theoretical coordinates and the sub-marker graphics;

[0158] The set path is corrected according to the offset relationship, and the starting coordinates are obtained so that the alignment accuracy between the second graphic formed by the set path and the corresponding first graphic meets the set standard.

[0159] The material strip is pulled along the first length direction, and the laser is controlled to expose multiple first interval areas in sequence from the starting coordinate to form multiple first halftone patterns. The multiple first halftone patterns are B1, B2, B3 to Bn in the exposure order.

[0160] The material strip is pulled along the second length direction, and the laser is controlled by the processor to expose multiple second interval areas in sequence to form multiple second screen patterns. The first length direction is opposite to the second length direction, and the multiple second screen patterns are C1, C2, C3 to Cn in the exposure order.

[0161] Development: The exposed photoresist film and metal foil roll are immersed in a developing solution for development. The exposed metal roll passes through the developing solution bath, where the photoresist in areas that haven't cured due to exposure (using negative photoresist) is dissolved, leaving the desired fine pattern on the remaining photoresist film. This precisely fabricates the desired pattern onto the photoresist. Depending on the etching process requirements of the FMM product, development can be performed simultaneously on both sides or on one side.

[0162] Wet etching: After forming the desired precision pattern on the photoresist on the foil, the wet etching patterning process transfers the precision pattern from the photoresist to the metal foil, forming a precision metal mask with the required precision micropore structure. Etching can be done simultaneously on both sides or in two separate etching steps, or as a single-sided etching process. A roll of metal foil with developed photoresist film is passed through an etching tank. The areas of the metal foil not covered by the photoresist film (i.e., the developed areas not covered by the photoresist film) come into contact with the etching solution, and the exposed metal foil is etched into the desired micropores according to the pattern on the photoresist. After etching on both sides, the precision micro-pattern on the photoresist is etched onto the metal foil, forming an FMM strip corresponding to the original precision metal mask (FMM) pattern design, with many fine through-hole patterns.

[0163] Photoresist removal: Removing the photoresist film from the surface of the etched metal roll. After etching on both sides, the photoresist film is removed from the etched foil roll using a chemical solution in a photoresist removal machine, leaving the metal foil roll with the etched pattern, thus forming a metal foil roll with FMM pattern. The micropore size on this FMM product is 48±2µm.

[0164] Cutting / Inspection Analysis: The patterned FMM (Foil Mask) finished product rolls, after defilming, are cut into precision metal mask (FMM) strips according to the set FMM product dimensions. The finished precision metal mask strips undergo quality inspection and analysis according to product specifications. The measured characteristics of the precision metal mask are listed in Example 1 of Table 2. The actual patterns of the mother mark and child mark on the strip are as follows: Figure 13 As shown.

[0165] Comparative Example

[0166] Comparative Example 1

[0167] The same manufacturing method as in Example 1 is used, except that the exposure is performed by using a G8.6 generation exposure machine and the corresponding photomask to expose sequentially to form a set of FMM product patterns (the first pattern and the second pattern are formed by exposure in one step).

[0168] Table 2. Dimensional characteristics of large-size precision metal masks for 8th generation pipelines manufactured using different embodiment processes.

[0169]

[0170] Table 3. Cost advantages and disadvantages of the present invention and large-size exposure equipment combined with a large-size photomask for manufacturing precision metal masks for eighth-generation lines in a single exposure.

[0171]

[0172] Based on the results in Tables 2 and 3, the manufacturing method of this application for precision metal mask (FMM) uses a large-size strip as the exposure substrate and a low-generation small-size exposure machine for exposure. Through a unique splicing exposure method, it is possible to complete the exposure of higher-generation large-size FMMs using existing low-generation exposure machines. Through the design of special alignment methods and alignment marks, high alignment accuracy and exposure consistency can still be achieved when large-size strips are exposed in batches. Thus, it has the same size and vapor deposition effect as FMMs formed by high-generation exposure, and the present invention has a lower cost.

[0173] The above are merely specific embodiments of the present invention, but the scope of protection of the present invention is not limited thereto. Those skilled in the art should understand that the present invention includes, but is not limited to, the contents described in the accompanying drawings and the specific embodiments above. Any modifications that do not depart from the functional and structural principles of the present invention will be included within the scope of the claims.

Claims

1. A method for manufacturing a photomask, characterized in that, include: The material strip is exposed to obtain a first strip segment with multiple first patterns, wherein the material strip includes a strip foil and a photoresist layer formed on the surface of the strip foil, there is a gap between two adjacent first patterns, and the first pattern includes multiple mother mark patterns and multiple pixel hole patterns; By controlling a laser to sequentially expose multiple interval regions along a set path using a processor, a second strip segment with multiple second patterns is obtained. The set path matches a set pattern in the processor. The second pattern includes multiple sub-marker patterns corresponding to the multiple parent marker patterns, and auxiliary patterns corresponding to the interval regions. Controlling the laser to expose the interval regions along the set path includes: Obtain the actual coordinates of the parent marker graphic; Determine the offset relationship between the actual coordinates and the corresponding theoretical coordinates in the set drawing, wherein the theoretical coordinates correspond to the sub-marker graphics; The set path is corrected according to the offset relationship, and the starting coordinates are obtained, so that the alignment accuracy between the second graphic formed by the set path and the corresponding first graphic meets the set standard. The laser is controlled to expose the corresponding interval area along the set path, starting from the initial coordinates, to obtain the corresponding second pattern.

2. The method according to claim 1, characterized in that, The step of determining the offset relationship between the actual coordinates and the corresponding theoretical coordinates in the set drawing includes: Determine the first offset dimension of the actual coordinates relative to the theoretical coordinates along the length of the strip; Determine the second offset dimension of the actual coordinates relative to the theoretical coordinates along the width direction of the strip; Determine the deviation value of the distance between two adjacent actual coordinates relative to the distance between two corresponding adjacent theoretical coordinates; Determine the offset angle between the direction of the line connecting two adjacent actual coordinates and the direction of the line connecting two corresponding adjacent theoretical coordinates; Based on the first offset dimension, the second offset dimension, the deviation value, and the offset angle, the offset relationship between the actual coordinates and the theoretical coordinates is established.

3. The method according to claim 2, characterized in that, The step of correcting the set path according to the offset relationship and obtaining the starting coordinates, so that the alignment accuracy between the second graphic formed by the set path and the corresponding first graphic meets the set standard, includes: If the deviation value exceeds the set range, the size of the second graphic formed by the set path is matched with the size of the first graphic by enlarging or reducing the set drawing. If the first offset dimension or the second offset dimension exceeds the set value, the starting coordinate is offset and compensated along the length or width of the strip so that the alignment accuracy between the sub-marker graphic formed by the set path and the parent marker graphic meets the set standard. If the offset angle exceeds a set angle, the set drawing is rotated so that the rotation angle of the second drawing formed by the set path relative to the first drawing meets the set standard.

4. The method according to claim 1, characterized in that, The tape has multiple first exposure areas for forming a first pattern. The length of the pixel hole pattern is less than the length of the first exposure area, such that there is a tape blank area between the edge of the pixel hole pattern and the edge of the first exposure area. The mother mark pattern is located in the tape blank area. The mother marker graphic includes multiple first markers and multiple second markers, with the first markers and second markers symmetrically arranged about the pixel hole graphic to align the second graphics on both sides of the first graphic.

5. The method according to claim 4, characterized in that, The interval region includes a first interval region and a second interval region. The first interval region is adjacent to one side of the first pattern, and the second interval region is adjacent to the other side of the same first pattern. The second pattern includes a first mesh pattern corresponding to the first interval region and a second mesh pattern corresponding to the second interval region. The first mark is used for the alignment of the first mesh pattern with the first pattern, and the second mark is used for the alignment of the second mesh pattern with the first pattern.

6. The method according to claim 5, characterized in that, The step of controlling the laser to expose multiple interval regions sequentially via a set path by a processor includes: The material strip is pulled along the first length direction, and the laser controlled by the processor is used to expose multiple first interval areas in sequence to form multiple first halftone patterns; The material strip is pulled along the second length direction, and the laser is controlled by the processor to expose multiple second interval areas in sequence to form multiple second halftone patterns, wherein the first length direction is opposite to the second length direction.

7. The method according to any one of claims 1 to 6, characterized in that, The first pattern further includes at least one central hole and at least two alignment holes. The central hole is located at the center of the pixel hole pattern, and at least one alignment hole is located at the center of any wide side of the first pattern, such that the line connecting the central hole and the alignment holes has a first direction, which is consistent with the length direction of the strip. The second pattern includes a fixing hole located at the middle of the second pattern along the width direction of the strip. The line connecting the center hole and the fixing hole forms an offset angle with the first direction. The offset angle is used to indicate the rotation angle of the exposed second pattern relative to the corresponding first pattern.

8. An exposure system, characterized in that, The exposure system includes a conveying mechanism, a first exposure device, and a second exposure device. The conveying mechanism is used to drive the material belt through the first exposure device and the second exposure device in sequence, so as to expose different areas of the material belt in sequence to form multiple first patterns and second patterns, and there is an interval area between two adjacent first patterns. The first exposure apparatus includes at least one first light source and at least one photomask. The photomask is located on the light-emitting side of the first light source. The photomask includes a master mark pattern area and a pixel hole pattern area for exposing the strip to form the master mark pattern and the pixel hole pattern. The second exposure device includes a detection module, a processor module, and at least one laser source. The detection module is used to acquire the actual coordinates of the master mark pattern. The processor module is configured with a set drawing. The processor module is used to match the actual coordinates acquired by the detection module with the set drawing to establish an offset relationship between the actual coordinates and the corresponding theoretical coordinates in the set drawing. According to the offset relationship, the laser source is controlled to expose the material strip along a set path to form the second pattern. The second pattern includes multiple sub-marker patterns corresponding to multiple master mark patterns, and auxiliary patterns corresponding to the interval area.

9. The exposure system according to claim 8, characterized in that, The first exposure apparatus includes two photomasks and two first light sources for exposing the front and back sides of the strip. The two photomasks are positioned opposite each other and spaced apart. The two first light sources are located outside the two photomasks, and the gap between the two photomasks allows the strip to pass through. The second exposure apparatus includes two opposing and spaced-apart laser sources for exposing the front and back sides of the strip, with the space between the two laser sources used for feeding the strip through.

10. The exposure system according to claim 8, characterized in that, The conveying mechanism includes an unwinding mechanism, a winding mechanism, and a position control module. The unwinding mechanism and the rewinding mechanism are respectively located at the inlet and outlet of the second exposure device, so that the material strip moves within the second exposure device through the unwinding of the unwinding mechanism and the rewinding of the rewinding mechanism. The position control module includes a controller and at least two detectors. The two detectors are located at the unwinding mechanism and the winding mechanism, respectively, and are used to detect the transmission position of the material strip. The controller is used to control the unwinding mechanism and the winding mechanism based on the position detected by the detectors, so as to realize the winding and unwinding of the material strip.

11. The exposure system according to any one of claims 8 to 10, characterized in that, The second exposure device includes a motion adjustment mechanism, the laser source is fixedly connected to the motion adjustment mechanism, the motion adjustment mechanism is capable of moving in multiple directions relative to the material strip, and the processor module controls the motion adjustment mechanism so that the laser source exposes the material strip along a set path.

12. The exposure system according to any one of claims 8 to 10, characterized in that, The exposure system further includes a tensioning mechanism for providing exposure tension to the strip. The tensioning mechanism includes a first clamping roller group and a second clamping roller group located on both sides of the area to be exposed in the first exposure device. The first clamping roller group and the second clamping roller group clamp and convey the strip to form a set exposure tension.

Images