A radio frequency pulse modulation signal generation circuit and a radio frequency pulse modulation device

Abstract

The present application relates to the field of radio frequency pulse modulation technology, and provides a radio frequency pulse modulation signal generation circuit and a radio frequency pulse modulation device, wherein the circuit comprises: a control module; a push-pull module connected with the controlled end of the push-pull module; a switch modulation module connected with the push-pull module, the switch modulation module being connected with a radio frequency signal input end and a radio frequency signal output end; and an overshoot module connected with the push-pull module. The control module generates a basic pulse signal, without relying on external equipment to reduce the implementation cost, the push-pull module improves the edge change rate of the pulse signal, and the overshoot module generates a controlled overshoot current when the pulse edge changes, in a two-stage enhancement processing manner, to form a high-quality pulse signal, effectively improve the state switching speed of the switch modulation module, guarantee the quality of the pulse modulation signal, and at the same time, the two-stage enhancement processing can make the signal edge reach nanosecond-level rising and falling change, which is beneficial to realize super-high-speed radio frequency pulse modulation.

Description

Technical Field

[0001] This invention relates to the field of radio frequency pulse modulation technology, and in particular to a radio frequency pulse modulation signal generation circuit and a radio frequency pulse modulation device. Background Technology

[0002] In the fields of modern wireless communication, radar systems, and other microwave technologies, high-speed radio frequency (RF) pulse modulation is a crucial element for achieving precise signal control. The core of RF pulse modulation lies in rapidly generating high-quality pulse signals. Current technologies typically rely on external analog modulators or vector signal generators to generate these signals. Using an external analog modulator requires additional pulse signal source equipment, and the connection between the external modulator and the pulse modulation device necessitates matching cables and impedance to ensure pulse modulation quality. Using a vector signal generator, on the other hand, presents challenges due to its high cost and complex configuration.

[0003] Therefore, how to achieve fast radio frequency pulse modulation at low cost while ensuring the quality of the pulse modulation signal is an urgent problem to be solved. Summary of the Invention

[0004] This invention provides a radio frequency pulse modulation signal generation circuit and a radio frequency pulse modulation device to solve the defects of existing technologies in the radio frequency pulse modulation process, which rely on external equipment and have high implementation costs.

[0005] This invention provides a radio frequency pulse modulation signal generation circuit, comprising:

[0006] The control module is used to generate pulse signals;

[0007] A push-pull module, wherein the control module is connected to the controlled end of the push-pull module;

[0008] A switching modulation module is provided, wherein the push-pull module is connected to the switching modulation module, the switching modulation module is connected to the radio frequency signal input terminal and the radio frequency signal output terminal, and the push-pull module drives the switching modulation module to switch the output switching state based on the pulse signal;

[0009] An overshoot module is connected to the push-pull module. The overshoot module is used to induce a controlled overshoot current to accelerate the state switching when the switch modulation module switches the output switch state.

[0010] According to the present invention, a radio frequency pulse modulation signal generation circuit further includes an isolation module. The output terminal of the push-pull module is connected to the switch modulation module through the isolation module. The isolation module is used to isolate radio frequency signals.

[0011] According to the present invention, an RF pulse modulation signal generation circuit is provided, wherein the isolation module includes an inductor and a low-pass filter, the inductor and the low-pass filter are connected in series to form a low-pass filter circuit, one end of the low-pass filter circuit is connected to the output terminal of the push-pull module, and the other end of the low-pass filter circuit is connected to the switching modulation module.

[0012] According to the present invention, a radio frequency pulse modulation signal generation circuit is provided, wherein the push-pull module includes a PNP transistor and an NPN transistor. The bases of the PNP transistor and the NPN transistor are both connected to the control module. The emitter of the PNP transistor is connected to a positive voltage. The collector of the PNP transistor is connected to the collector of the NPN transistor and the isolation module, respectively. The emitter of the NPN transistor is connected to a negative voltage. The overshoot module is connected to the base of the PNP transistor and / or the collector of the PNP transistor and / or the base of the NPN transistor.

[0013] According to the present invention, a radio frequency pulse modulation signal generation circuit is provided, wherein the overshoot module includes a first resistor and a first capacitor, the first resistor and the first capacitor are connected in parallel to form a first parallel circuit, one end of the first parallel circuit is connected to the control module, and the other end of the first parallel circuit is connected to the base of the PNP transistor.

[0014] And / or, the overshoot module includes a second resistor and a second capacitor, the second resistor and the second capacitor are connected in parallel to form a second parallel circuit, one end of the second parallel circuit is connected to the collector of the PNP transistor, and the other end of the second parallel circuit is connected to the switch modulation module and the collector of the NPN transistor respectively.

[0015] And / or, the overshoot module includes a third capacitor, one end of which is connected to the control module, and the other end of which is connected to the base of the NPN transistor.

[0016] According to the present invention, a radio frequency pulse modulation signal generation circuit further includes a driving module, wherein the control module is connected to the controlled terminal of the push-pull module through the driving module.

[0017] According to the present invention, a radio frequency pulse modulation signal generation circuit is provided, wherein the driving module includes a high-speed level conversion circuit, the control module is connected to the input terminal of the high-speed level conversion circuit, and the output terminal of the high-speed level conversion circuit is connected to the controlled terminal of the push-pull module.

[0018] According to the present invention, a radio frequency pulse modulation signal generation circuit is provided, wherein the switching modulation module includes at least one PIN diode, the anode of the PIN diode is connected to the isolation module of the push-pull module, the radio frequency signal input terminal and the radio frequency signal output terminal respectively, and the cathode of the PIN diode is grounded.

[0019] According to the present invention, a radio frequency pulse modulation signal generation circuit is provided, wherein the switching modulation module includes eight PIN diodes, the anodes of the eight PIN diodes are respectively connected to the isolation module of the push-pull module, the radio frequency signal input terminal and the radio frequency signal output terminal, and the cathodes of the eight PIN diodes are all grounded.

[0020] The present invention also provides a radio frequency pulse modulation device, including the radio frequency pulse modulation signal generation circuit described above.

[0021] The present invention provides a radio frequency pulse modulation signal generation circuit and a radio frequency pulse modulation device, which have at least the following beneficial effects: A control module generates a pulse signal and transmits it to a push-pull module. The push-pull module performs push-pull processing based on the pulse signal, resulting in a higher rate of change of the output pulse edge and increasing the pulse signal's transition speed. Consequently, the pulse signal output by the push-pull module enables the switching modulation module to quickly switch its output switching state, thereby pulse-modulating the radio frequency signal and generating a pulse-modulated signal. Simultaneously, an overshoot module is connected to the push-pull module to generate a controlled overshoot current when the push-pull module causes the switching modulation module to switch its output switching state. This controlled overshoot current further accelerates the switching of the switching modulation module's output switching state, further increasing the rate of change of the pulse-modulated signal edge. In this way, the control module generates a basic pulse signal without relying on external equipment, reducing implementation costs. The push-pull module improves the edge change rate of the pulse signal, and the overshoot module generates a controlled overshoot current when the pulse edge changes. Through two-stage enhancement processing, a high-quality pulse signal is formed, which effectively improves the state switching speed of the switching modulation module and ensures the quality of the pulse modulation signal. At the same time, the two-stage enhancement processing enables the signal edge to rise and fall at the nanosecond level, which is conducive to realizing ultra-high-speed radio frequency pulse modulation. Attached Figure Description

[0022] To more clearly illustrate the technical solutions in this invention or related technologies, the accompanying drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of this invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0023] Figure 1 This is a circuit diagram of one embodiment of the radio frequency pulse modulation signal generation circuit provided by the present invention.

[0024] Figure 2 This is a measured diagram of a radio frequency pulse modulation signal from one embodiment of the radio frequency pulse modulation signal generation circuit provided by the present invention.

[0025] Figure label:

[0026] 100: Control module; 200: Push-pull module; 300: Switch modulation module; 400: Overshoot module; 500: Isolation module; 510: Inductor; 520: Low-pass filter; 600: Driver module. Detailed Implementation

[0027] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0028] The output pulse waveform of an RF microwave signal source is mainly achieved through pulse modulation technology. The core idea is to use a low-frequency pulse signal (baseband pulse) to control (modulate) a high-frequency continuous wave RF signal (carrier), so that the RF signal is output only during the high (or low) level of the pulse, and is turned off or significantly attenuated during the low (or high) level of the pulse.

[0029] The radio frequency pulse modulation process suffers from drawbacks such as reliance on external equipment and high implementation costs. The following section combines... Figure 1 A radio frequency pulse modulation signal generation circuit according to the present invention includes:

[0030] Control module 100 is used to generate pulse signals;

[0031] Push-pull module 200, wherein the control module 100 is connected to the controlled end of the push-pull module 200;

[0032] A switch modulation module 300 is provided, and the push-pull module 200 is connected to the switch modulation module 300. The switch modulation module 300 is connected to an RF signal input terminal and an RF signal output terminal. The push-pull module 200 drives the switch modulation module 300 to switch the output switch state based on the pulse signal.

[0033] The overshoot module 400 is connected to the push-pull module 200. The overshoot module 400 is used to induce a controlled overshoot current to accelerate the state switching when the switch modulation module 300 switches the output switch state.

[0034] The control module 100 generates a pulse signal and transmits it to the push-pull module 200. The push-pull module 200 performs push-pull processing based on the pulse signal to make the edge of the output pulse have a higher rate of change, increasing the transition speed of the pulse signal. As a result, the pulse signal output by the push-pull module 200 can cause the switch modulation module 300 to quickly switch the output switch state, pulse modulating the radio frequency signal to generate a pulse modulated signal. At the same time, the overshoot module 400 is connected to the push-pull module 200 to generate a controlled overshoot current when the push-pull module 200 causes the switch modulation module 300 to switch the output switch state. The controlled overshoot current can further accelerate the switching of the output switch state of the switch modulation module 300, further increasing the edge change rate of the pulse modulated signal.

[0035] In this way, the control module 100 generates a basic pulse signal, reducing implementation costs by eliminating the need for external equipment. The push-pull module 200 enhances the edge change rate of the pulse signal, and the overshoot module 400 generates a controlled overshoot current when the pulse edge changes. Through two-stage enhancement processing, a high-quality pulse signal is formed, which effectively improves the state switching speed of the switching modulation module 300 and ensures the quality of the pulse modulation signal. At the same time, the two-stage enhancement processing enables the signal edge to rise and fall at the nanosecond level, which is beneficial for realizing ultra-high-speed radio frequency pulse modulation.

[0036] Understandably, the push-pull module 200 outputs the processed and enhanced pulse signal to the switch modulation module 300, causing the switch modulation module 300 to switch its output switch state. The output switch state includes an output on state and an output off state. In the output on state, an RF signal is output; in the output off state, the RF signal is not output. One of the output on state or the output off state corresponds to a high level of the pulse signal, and the other corresponds to a low level. Thus, based on the enhanced pulse signal, pulse modulation is achieved, and the output signal generated by the switch modulation module 300 is the RF pulse modulated signal.

[0037] It is important to emphasize that the push-pull module 200 enhances the rate of change of the rising and falling edges of the pulse signal, i.e., enhances the transition speed of the pulse signal. This accelerates the state switching speed of the switch modulation module 300 from the perspective of response speed. The greater the rate of change of the rising and falling edges, the faster the response of the switch modulation module 300. The overshoot module 400 generates a controlled overshoot current, which accelerates the state switching speed of the switch modulation module 300 from the perspective of state switching action. Since the devices in the switch modulation module 300 require current changes to complete the output switching state transition, by generating a controlled overshoot current of appropriate magnitude, the switch modulation module 300 can complete the state switching action more quickly, thereby improving the state switching speed.

[0038] For a more straightforward understanding, an illustrative example is given. Originally, the pulse signal requires A time to switch the level state, causing the switch modulation module 300 to start the state switching operation. The switch modulation module 300 needs B time to complete the state switching operation. Then the overall state switching time is A + B time. However, in the present invention, through the push - pull module 200, the rate of change of the rising edge and falling edge of the pulse signal is increased, so that the pulse signal only needs C time less than A time for level switching. Furthermore, the switch modulation module 300 starts the state switching operation in C time less than A time, improving the response speed. By the overshoot module 400, a controlled overshoot current is generated, enabling the switch modulation module 300 to complete the state switching operation in D time less than B time. The overall state switching time is C + D time, and C < A and D < B. Both the push - pull module 200 and the overshoot module 400 are beneficial to achieving ultra - high - speed radio - frequency pulse modulation.

[0039] It should be noted that the control module 100 is the internal control module 100 in the pulse modulation circuit, not an external device module. The pulse signal generated by the control module 100 cannot be directly used for pulse modulation, and the quality of its pulse rising edge and falling edge cannot directly meet the requirements. Therefore, enhancement processing is carried out through the push - pull module 200 and the overshoot module 400 so that the processed pulse signal meets the requirements of pulse modulation, and the rising edge and falling edge reach the nanosecond - level rise and fall changes, as Figure 2 shown, enabling ultra - high - speed radio - frequency pulse modulation.

[0040] In some embodiments of the present invention, the control module 100 can adopt the implementation mode of FPGA; in some embodiments, the control module 100 can also include implementation modes of devices such as single - chip microcomputers and embedded chips.

[0041] Refer to Figure 1 , in some embodiments of a radio - frequency pulse modulation signal generation circuit of the present invention, an isolation module 500 is further included. The output end of the push - pull module 200 is connected to the switch modulation module 300 through the isolation module 500, and the isolation module 500 is used to isolate radio - frequency signals.

[0042] In the above - mentioned embodiment, by setting an isolation module 500 between the push - pull module 200 and the switch modulation module 300, the radio - frequency signal of the switch modulation module 300 is isolated, preventing the radio - frequency signal from being transmitted backward to the push - pull module 200 and avoiding the crosstalk of radio - frequency signals affecting the pulse signal, which is beneficial to ensuring the stable operation of the push - pull module 200 and generating reliable pulse signals.

[0043] It can be understood that the isolation module 500 is unidirectional isolation, that is, only radio - frequency signals are isolated, and the enhanced pulse signal output by the push - pull module 200 can normally pass through the isolation module 500 and be transmitted to the switch modulation module 300.

[0044] refer to Figure 1 In some embodiments of the radio frequency pulse modulation signal generation circuit of the present invention, the isolation module 500 includes an inductor 510 and a low-pass filter 520. The inductor 510 and the low-pass filter 520 are connected in series to form a low-pass filter circuit. One end of the low-pass filter circuit is connected to the output terminal of the push-pull module 200, and the other end of the low-pass filter circuit is connected to the switch modulation module 300.

[0045] Because the pulse signal has a very wide frequency range, the filtering effect of the low-pass filter 520 is limited. The enhanced pulse signal output from the push-pull module 200 can be transmitted to the switching modulation module 300 through the inductor 510 and the low-pass filter 520. Since the radio frequency (RF) signal in the switching modulation module 300 is a high-frequency signal, it cannot pass through the low-pass filter 520. Furthermore, the inductor 510 also has a suppressive effect on high-frequency signals, thus achieving isolation of the RF signal. Therefore, by connecting the inductor 510 and the low-pass filter 520 in series to form a low-pass filter circuit, the reverse transmission of the RF signal to the push-pull module 200 is blocked, while allowing the pulse signal to pass through. This achieves isolation of the RF signal, avoids RF signal crosstalk, and improves the stability of the generated enhanced pulse signal, making pulse modulation more stable and reliable.

[0046] Understandably, the low-pass filter band corresponding to the low-pass filter 520 is designed to minimize the impact on the pulse signal while ensuring effective filtering of the radio frequency signal, i.e., isolation, so as to further ensure the quality of the pulse signal transmitted to the switching modulation module 300.

[0047] refer to Figure 1 In some embodiments of the radio frequency pulse modulation signal generation circuit of the present invention, the push-pull module 200 includes a PNP transistor Q1 and an NPN transistor Q2. The bases of both the PNP transistor Q1 and the NPN transistor Q2 are connected to the control module 100. The emitter of the PNP transistor Q1 is connected to a positive voltage. The collector of the PNP transistor Q1 is connected to the collector of the NPN transistor Q2 and the isolation module 500, respectively. The emitter of the NPN transistor Q2 is connected to a negative voltage. The overshoot module 400 is connected to the base of the PNP transistor Q1 and / or the collector of the PNP transistor Q1 and / or the base of the NPN transistor Q2.

[0048] PNP transistor Q1 and NPN transistor Q2 form a push-pull structure. The bases of both PNP transistor Q1 and NPN transistor Q2 are controlled by the pulse signal generated by the control module 100. Since the base conduction levels of PNP transistor Q1 and NPN transistor Q2 are opposite, they complement each other under the action of the same pulse signal, achieving rapid current switching. The push-pull structure shortens the transistor switching time, increases the pulse edge change rate, and the emitter of NPN transistor Q2 is connected to a negative voltage, making the low level of the pulse signal more stable.

[0049] The overshoot module 400 is connected to the base of the PNP transistor Q1 and / or the collector of the PNP transistor Q1 and / or the base of the NPN transistor Q2, so that a controlled overshoot current is generated when the pulse signal level generated by the control module 100 switches, that is, when the on and off states of the PNP transistor Q1 and the NPN transistor Q2 switch.

[0050] It is understood that in the push-pull module 200, PNP transistor Q1 and NPN transistor Q2 are connected to form a push-pull circuit. In some embodiments of the present invention, the push-pull module 200 may also use an NPN transistor as the upper transistor of the push-pull circuit and a PNP transistor as the lower transistor of the push-pull circuit.

[0051] refer to Figure 1 In some embodiments of the radio frequency pulse modulation signal generation circuit of the present invention, the overshoot module 400 includes a first resistor R3 and a first capacitor C2. The first resistor R3 and the first capacitor C2 are connected in parallel to form a first parallel circuit. One end of the first parallel circuit is connected to the control module 100, and the other end of the first parallel circuit is connected to the base of the PNP transistor Q1.

[0052] The first resistor R3 and the first capacitor C2 are connected in parallel and then connected to the base of the PNP transistor Q1. When the pulse signal switches to a low level, the first capacitor C2 provides a low-impedance path, resulting in a relatively large base current for the PNP transistor during the low-level switching. This causes the PNP transistor Q1 to turn on more quickly, and the push-pull circuit formed by the PNP transistor generates a controlled overshoot current. As the first capacitor C2 charges, the current gradually decreases, meaning the low-impedance path disappears. The PNP transistor Q1 maintains its base current through the first resistor R3 to keep it on until the pulse signal switches to a high level.

[0053] Similarly, when the pulse signal switches to a high level, the first capacitor C2 will also provide a low-impedance path to generate a controlled overshoot current, causing the PNP transistor to turn off more quickly.

[0054] refer to Figure 1In some embodiments of the radio frequency pulse modulation signal generation circuit of the present invention, the overshoot module 400 includes a second resistor R4 and a second capacitor C3. The second resistor R4 and the second capacitor C3 are connected in parallel to form a second parallel circuit. One end of the second parallel circuit is connected to the collector of the PNP transistor Q1, and the other end of the second parallel circuit is connected to the collector of the switching modulation module 300 and the NPN transistor Q2, respectively.

[0055] The second resistor R4 and the second capacitor C3 are connected in parallel and then connected to the collector of the PNP transistor Q1. When the PNP transistor Q1 is turned on, the second capacitor C3 provides a low-impedance path for the collector output current, resulting in a relatively large current generated when the PNP transistor Q1 is turned on, i.e., a controlled overshoot current. As the second capacitor C3 charges, the current gradually decreases, i.e., the low-impedance path disappears, and the collector of the PNP transistor Q1 outputs through the second resistor R4 until the PNP transistor Q1 is turned off.

[0056] It is understandable that when PNP transistor Q1 is turned off, NPN transistor Q2 will turn on accordingly, and the electrical energy stored in the second capacitor C3 will be released through the path of NPN transistor Q2 to provide a low-impedance path when PNP transistor Q1 turns on again.

[0057] refer to Figure 1 In some embodiments of the radio frequency pulse modulation signal generation circuit of the present invention, the overshoot module 400 includes a third capacitor C1, one end of the third capacitor C1 is connected to the control module 100, and the other end of the third capacitor is connected to the base of the NPN transistor Q2.

[0058] By connecting a third capacitor C1 to the base of NPN transistor Q2, NPN transistor Q2 becomes AC-triggered, meaning it is triggered by the rising and falling edges of a pulse signal. Since the emitter of NPN transistor Q2 is connected to a negative voltage, it conducts when the pulse signal rises, resulting in a negative voltage at the output of the push-pull circuit. This leads to a larger voltage change and consequently, a larger current, i.e., a controlled overshoot current. Once the third capacitor C1 is fully charged, there is no current input to the base of NPN transistor Q2, causing it to turn off. At this point, PNP transistor Q1 is also off, thus maintaining a low output level for the push-pull circuit.

[0059] When the pulse signal generates a falling edge, the third capacitor C1 releases the stored energy and charges in reverse so that when the next pulse signal generates a rising edge, the NPN transistor Q2 turns on and provides the base current.

[0060] In the overshoot module 400, the first resistor R3, the first capacitor C2, the second resistor R4, the second capacitor C3, and the third capacitor C1 can induce a controlled overshoot current from three angles, thereby further accelerating the output switching state switching speed of the switching modulation module 300, which is beneficial for realizing ultra-high-speed radio frequency pulse modulation.

[0061] refer to Figure 1 In some embodiments of the present invention, the overshoot module 400 includes a first resistor R3, a first capacitor C2, a second resistor R4, a second capacitor C3, and a third capacitor C1.

[0062] It is important to emphasize that in related technical fields, overshoot voltage or current is usually actively suppressed to reduce or avoid its generation. However, this invention, by incorporating an overshoot module 400, actively induces a controlled overshoot current, breaking with conventional technical thinking. Based on the controlled overshoot current, the switching modulation module 300 switches the output switching state more quickly, thereby achieving ultra-high-speed radio frequency pulse modulation.

[0063] refer to Figure 1 In some embodiments of the radio frequency pulse modulation signal generation circuit of the present invention, a driving module 600 is further included, and the control module 100 is connected to the controlled terminal of the push-pull module 200 through the driving module 600.

[0064] Since the pulse signal directly output by the control module 100 has weak driving capability, a drive module 600 is provided to enhance the driving force of the pulse signal generated by the control module 100. This ensures that the pulse signal can stably drive the transistors in the push-pull module 200, preventing insufficient conduction of the transistors in the push-pull module 200, which would increase the on-resistance and affect the power capacity, thus causing degradation of the rising and falling edges. The drive module 600 ensures that the pulse signal has sufficient driving capability so that the transistors operate in the saturation region, ensuring that the enhanced pulse signal is not distorted. At the same time, it avoids the transistors operating in the linear region, which would lead to excessive power consumption and damage, thus improving safety and reliability.

[0065] refer to Figure 1 In some embodiments of the radio frequency pulse modulation signal generation circuit of the present invention, the driving module 600 includes a high-speed level conversion circuit, the control module 100 is connected to the input terminal of the high-speed level conversion circuit, and the output terminal of the high-speed level conversion circuit is connected to the controlled terminal of the push-pull module 200.

[0066] The high-speed level conversion circuit synchronously outputs the corresponding level according to the pulse signal output by the control module 100. At the same time, the pulse signal output by the high-speed level conversion circuit has a stronger driving capability to meet the driving requirements of the push-pull module 200.

[0067] In some embodiments of the present invention, the driving module 600 may also include implementations of circuits or devices, such as a voltage follower circuit, that can enhance the driving capability of the output pulse signal of the control module 100.

[0068] refer to Figure 1 In some embodiments of the radio frequency pulse modulation signal generation circuit of the present invention, the switch modulation module 300 includes at least one PIN diode, the anode of the PIN diode is connected to the isolation module 500 of the push-pull module 200, the radio frequency signal input terminal and the radio frequency signal output terminal respectively, and the cathode of the PIN diode is grounded.

[0069] The PIN diode rapidly switches between on and off states under the drive of the enhanced pulse signal output by the push-pull module 200. When the PIN diode is on, it acts as a low-impedance path for the RF signal, causing the RF signal to discharge to ground, meaning the switching modulation module 300 stops outputting the RF signal. When the PIN diode is off, it acts as a high-impedance path for the RF signal, equivalent to an open circuit, at which point the switching modulation module 300 outputs the RF signal. Thus, pulse signal control of the RF signal output is achieved using the PIN diode, resulting in a simple structure that is easy to implement.

[0070] Since the total charge of the I-layer (intrinsic semiconductor layer) in the PIN diode is mainly generated by the bias current, rather than by the instantaneous value of the RF microwave current, the bias current is provided by the enhanced pulse signal output by the push-pull module 200. For RF signals, the PIN diode is equivalent to a linear resistor, the resistance of which is determined by the DC bias. When forward biased, the resistance is small, close to a short circuit, and when reverse biased, the resistance is large, close to an open circuit.

[0071] refer to Figure 1 In some embodiments of the radio frequency pulse modulation signal generation circuit of the present invention, the switch modulation module 300 includes eight PIN diodes, the anodes of the eight PIN diodes are respectively connected to the isolation module 500 of the push-pull module 200, the radio frequency signal input terminal and the radio frequency signal output terminal, and the cathodes of the eight PIN diodes are all grounded.

[0072] By setting eight high-speed PIN diodes, four of which are... Figure 1 As shown in D1 to D4, eight high-speed PIN diodes are pulse-modulated to increase the turn-off ratio of the pulse switch. The PIN diodes are selected based on their minimum junction capacitance and minimum carrier lifetime.

[0073] In some embodiments of the present invention, the switching modulation module 300 may also be an implementation that includes switching devices such as MOS transistors and IGBT transistors to realize radio frequency modulation.

[0074] It is understandable that the radio frequency modulation signal refers to the output signal of the switching modulation module 300 throughout its entire operation, and the switching modulation module 300 stopping the output of the radio frequency signal is also considered as part of the radio frequency modulation signal.

[0075] The present invention provides a radio frequency pulse modulation device, which can be referred to in correspondence with the radio frequency pulse modulation signal generation circuit described above.

[0076] The present invention also provides a radio frequency pulse modulation device, including the radio frequency pulse modulation signal generation circuit described above.

[0077] The RF pulse modulation device does not require connection to an external pulse signal device. In the RF pulse modulation device, the control module 100 generates a pulse signal and transmits it to the push-pull module 200. The push-pull module 200 performs push-pull processing based on the pulse signal, making the edge change rate of the output pulse higher and increasing the transition speed of the pulse signal. As a result, the pulse signal output by the push-pull module 200 can cause the switch modulation module 300 to quickly switch the output switch state, pulse modulating the RF signal to generate a pulse modulated signal. At the same time, the overshoot module 400 is connected to the push-pull module 200 to generate a controlled overshoot current when the push-pull module 200 causes the switch modulation module 300 to switch the output switch state. The controlled overshoot current can further accelerate the switching of the output switch state of the switch modulation module 300, further increasing the edge change rate of the pulse modulated signal.

[0078] In this way, the control module 100 generates a basic pulse signal, reducing implementation costs by eliminating the need for external equipment. The push-pull module 200 enhances the edge change rate of the pulse signal, and the overshoot module 400 generates a controlled overshoot current when the pulse edge changes. Through two-stage enhancement processing, a high-quality pulse signal is formed, which effectively improves the state switching speed of the switching modulation module 300 and ensures the quality of the pulse modulation signal. At the same time, the two-stage enhancement processing enables the signal edge to rise and fall at the nanosecond level, which is beneficial for realizing ultra-high-speed radio frequency pulse modulation.

[0079] In the description of this invention, it should be understood that the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0080] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0081] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A radio frequency pulse modulation signal generation circuit, characterized in that, include: Control module (100) is used to generate pulse signals; A push-pull module (200), wherein the control module (100) is connected to the controlled end of the push-pull module (200); A switch modulation module (300) is provided, wherein the push-pull module (200) is connected to the switch modulation module (300), the switch modulation module (300) is connected to the radio frequency signal input terminal and the radio frequency signal output terminal, and the push-pull module (200) drives the switch modulation module (300) to switch the output switch state based on the pulse signal. An overshoot module (400) is connected to the push-pull module (200). The overshoot module (400) is used to induce a controlled overshoot current to accelerate the state switching when the switch modulation module (300) switches the output switch state. The push-pull module (200) includes a PNP transistor and an NPN transistor. The bases of the PNP transistor and the NPN transistor are both connected to the control module (100). The emitter of the PNP transistor is connected to a positive voltage. The collector of the PNP transistor is connected to the collector of the NPN transistor as the output terminal of the push-pull module (200). The emitter of the NPN transistor is connected to a negative voltage. The overshoot module (400) includes a first resistor and a first capacitor. The first resistor and the first capacitor are connected in parallel to form a first parallel circuit. One end of the first parallel circuit is connected to the control module (100), and the other end of the first parallel circuit is connected to the base of the PNP transistor. And / or, the overshoot module (400) includes a second resistor and a second capacitor, the second resistor and the second capacitor are connected in parallel to form a second parallel circuit, one end of the second parallel circuit is connected to the collector of the PNP transistor, and the other end of the second parallel circuit is connected to the switch modulation module (300) and the collector of the NPN transistor respectively. And / or, the overshoot module (400) includes a third capacitor, one end of which is connected to the control module (100), and the other end of which is connected to the base of the NPN transistor.

2. The radio frequency pulse modulation signal generation circuit according to claim 1, characterized in that, It also includes an isolation module (500), the output of the push-pull module (200) is connected to the switch modulation module (300) through the isolation module (500), and the isolation module (500) is used to isolate radio frequency signals.

3. The radio frequency pulse modulation signal generation circuit according to claim 2, characterized in that, The isolation module (500) includes an inductor (510) and a low-pass filter (520). The inductor (510) and the low-pass filter (520) are connected in series to form a low-pass filter circuit. One end of the low-pass filter circuit is connected to the output terminal of the push-pull module (200), and the other end of the low-pass filter circuit is connected to the switch modulation module (300).

4. The radio frequency pulse modulation signal generation circuit according to claim 2, characterized in that, The collector of the PNP transistor is connected to the collector of the NPN transistor and the isolation module (500), respectively.

5. The radio frequency pulse modulation signal generation circuit according to claim 1 or 2, characterized in that, It also includes a drive module (600), and the control module (100) is connected to the controlled end of the push-pull module (200) through the drive module (600).

6. The radio frequency pulse modulation signal generation circuit according to claim 5, characterized in that, The drive module (600) includes a high-speed level conversion circuit, the control module (100) is connected to the input terminal of the high-speed level conversion circuit, and the output terminal of the high-speed level conversion circuit is connected to the controlled terminal of the push-pull module (200).

7. A radio frequency pulse modulation signal generation circuit according to claim 1 or 2, characterized in that, The switching modulation module (300) includes at least one PIN diode. The anode of the PIN diode is connected to the isolation module (500) of the push-pull module (200), the radio frequency signal input terminal and the radio frequency signal output terminal, respectively. The cathode of the PIN diode is grounded.

8. The radio frequency pulse modulation signal generation circuit according to claim 7, characterized in that, The switching modulation module (300) includes eight PIN diodes. The anodes of the eight PIN diodes are respectively connected to the isolation module (500) of the push-pull module (200), the radio frequency signal input terminal and the radio frequency signal output terminal, and the cathodes of the eight PIN diodes are all grounded.

9. A radio frequency pulse modulation device, characterized in that, Includes a radio frequency pulse modulation signal generation circuit as described in any one of claims 1 to 8.

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