Perovskite stack assembly and method of manufacturing thereof

Abstract

The present application relates to the technical field of photovoltaic cells, and particularly relates to a perovskite laminated assembly and a preparation method thereof, which comprises a first perovskite layer, a transparent electrode layer and a second perovskite layer arranged in a laminated manner from top to bottom; the transparent electrode layer has a plurality of electrode units arranged in sequence and at intervals; the first perovskite layer and the second perovskite layer are connected with adjacent electrode units respectively to form a perovskite laminated group, and the perovskite laminated group is connected in series along the extension direction of the transparent electrode layer; by arranging the first perovskite layer and the second perovskite layer on the upper and lower sides of the transparent electrode layer, the sunlight incident from the front and the back can be fully absorbed; meanwhile, by using one transparent electrode layer for the two perovskite layers, the structure of the perovskite laminated assembly is simplified, the technical problems of low power generation efficiency and power generation capacity and high power generation cost of the perovskite assembly in the prior art are solved, the effective light emitting area and the power generation capacity of the perovskite laminated assembly are improved, and the manufacturing cost of the perovskite photovoltaic cell is reduced.

Description

Technical Field

[0001] This invention relates to the field of photovoltaic cell technology, and in particular to a perovskite tandem module and its preparation method. Background Technology

[0002] Among numerous novel solar cells, perovskite solar cells possess advantages such as high efficiency, solution-based fabrication, and low cost. A perovskite solar cell is a thin-film solar cell that utilizes perovskite-type semiconductor materials as the photoelectric conversion material. A conventional perovskite solar cell includes a substrate, a carrier transport layer, a first carrier transport layer, a perovskite layer, a second carrier transport layer, and a top electrode layer. Conventional perovskite solar cells have low absorption efficiency for sunlight and absorb almost no sunlight reflected from the ground.

[0003] Currently, in order to increase the power generation and output power of perovskite solar cells, there are also bifacial stacked solar cells on the market. By symmetrically stacking two perovskite solar cells, they can absorb sunlight from the front and sunlight reflected from the ground.

[0004] However, existing perovskite modules have low power generation and output, while bifacial stacked solar cells have complex structures and high power generation costs. Summary of the Invention

[0005] The purpose of this invention is to provide a perovskite tandem module and its preparation method, so as to solve the technical problems of low power generation efficiency and power generation and high power generation cost of perovskite modules in the prior art.

[0006] In a first aspect, the present invention provides a perovskite stacked assembly, comprising a first perovskite layer, a transparent electrode layer and a second perovskite layer stacked from top to bottom;

[0007] The transparent electrode layer has a plurality of electrode units arranged at intervals in sequence;

[0008] The first perovskite layer and the second perovskite layer are respectively connected to the adjacent electrode units to form a perovskite stack group, which is connected in series along the extension direction of the transparent electrode layer.

[0009] Furthermore, both the first perovskite layer and the second perovskite layer have a plurality of perovskite units arranged sequentially at intervals.

[0010] Each of the perovskite units is connected to two adjacent electrode units.

[0011] Furthermore, the perovskite stack further includes a first carrier transport layer and a second carrier transport layer, wherein the first carrier transport layer is disposed between the first perovskite layer and the transparent electrode layer, and the second carrier transport layer is disposed between the second perovskite layer and the transparent electrode layer.

[0012] Both the first and second carrier transport layers are provided with multiple spaced-apart groups of carrier transport units.

[0013] The charge carrier transport unit groups are configured in a one-to-one correspondence with the perovskite units.

[0014] Each of the said charge carrier transmission unit groups includes an electron transmission unit and a hole transmission unit arranged at intervals.

[0015] The electron transport unit and the hole transport unit are respectively connected to two adjacent electrode units.

[0016] Furthermore, the first perovskite layer and the second perovskite layer have a band gap difference;

[0017] The band gap of the first perovskite layer ranges from 1.49 to 1.89; the band gap of the second perovskite layer ranges from 1.09 to 1.69.

[0018] Furthermore, a first insulating portion is provided between the charge carrier transport unit groups and between the perovskite units.

[0019] Furthermore, a second insulating portion is provided between the electron transport unit and the hole transport unit in each carrier transport unit group, as well as between the electrode units.

[0020] Furthermore, the perovskite stacked assembly also includes a substrate, a cover plate, and an adhesive film.

[0021] The adhesive film is disposed on the side of the first perovskite layer away from the transparent electrode layer.

[0022] And / or, the adhesive film is disposed on the side of the second perovskite layer away from the transparent electrode layer.

[0023] The substrate is disposed at the bottom of the first perovskite layer, and the cover plate is disposed at the top of the second perovskite layer.

[0024] Secondly, embodiments of the present invention also provide a method for preparing a perovskite multilayer assembly, used to fabricate the above-mentioned perovskite multilayer assembly, comprising the following steps:

[0025] Step 1: Prepare the first perovskite layer on the substrate;

[0026] Step 2: Prepare a transparent electrode layer on top of the first perovskite layer, and prepare a second perovskite layer on top of the transparent electrode layer;

[0027] Step 3: Install a cover plate on top of the second perovskite layer.

[0028] Furthermore, it also includes, after preparing the first perovskite layer, preparing a first carrier transport layer on top of the first perovskite layer;

[0029] After the transparent electrode layer is prepared, a second carrier transport layer is prepared on top of the transparent electrode layer.

[0030] Further, the fabrication of the carrier transport layer includes:

[0031] Electron transport units and hole transport units are alternately prepared along the horizontal direction.

[0032] Further, the fabrication of the carrier transport layer includes:

[0033] A molybdenum ditelluride layer is prepared on the perovskite layer, and the molybdenum ditelluride layer is doped at intervals to form spaced electron transport units and hole transport units.

[0034] Compared with the prior art, the present invention provides a perovskite tandem module and its preparation method, comprising a first perovskite layer, a transparent electrode layer, and a second perovskite layer stacked from top to bottom; the transparent electrode layer has a plurality of electrode units arranged sequentially at intervals; the first perovskite layer and the second perovskite layer are respectively connected to adjacent electrode units to form a perovskite tandem group, and the perovskite tandem group is connected in series along the extension direction of the transparent electrode layer; by setting the first perovskite layer and the second perovskite layer on the upper and lower sides of the transparent electrode layer, the sunlight incident from the front can be fully absorbed and utilized, and the sunlight reflected from the back of the perovskite tandem module is also absorbed; at the same time, by sharing a transparent electrode layer with two perovskite layers, the structure of the perovskite tandem module is simplified, the dead zone of the perovskite cell is avoided, and the technical problems of low power generation efficiency and power generation and high power generation cost of perovskite modules in the prior art are solved, thereby increasing the effective light-emitting area and power generation of the perovskite tandem module and reducing the manufacturing cost of perovskite photovoltaic cells. Attached Figure Description

[0035] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0036] Figure 1 This is a schematic diagram of the perovskite layer and transparent electrode layer in Embodiment 1 of the present invention;

[0037] Figure 2 This is a schematic diagram of the perovskite stacked assembly in Embodiment 1 of the present invention;

[0038] Figure 3 This is a schematic diagram of the structure of the separated perovskite layer and transparent electrode layer in Embodiment 2 of the present invention;

[0039] Figure 4 This is a schematic diagram of the unseparated perovskite layer and transparent electrode layer in Embodiment 2 of the present invention;

[0040] Figure 5 This is a schematic diagram of the perovskite stacked assembly in Embodiment 2 of the present invention.

[0041] Figure label:

[0042] 100, First perovskite layer; 110, Perovskite unit;

[0043] 200. Transparent electrode layer; 210. Electrode unit;

[0044] 300. Second perovskite layer;

[0045] 400. First carrier transport layer; 410. Carrier transport unit group; 411. Hole transport layer; 412. Electron transport layer;

[0046] 500. Second carrier transport layer;

[0047] 600, adhesive film;

[0048] 700, cover plate; 800, base. Detailed Implementation

[0049] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The components of the embodiments of the present invention described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0050] Therefore, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the invention without inventive effort are within the scope of protection of the invention.

[0051] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0052] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product is in use. These terms are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first," "second," and "third," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0053] Furthermore, terms such as "horizontal," "vertical," and "sag" do not imply that components must be absolutely horizontal or suspended, but rather that they can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal relative to "vertical," and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0054] In the description of this invention, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0055] The following detailed description of some embodiments of the present invention is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0056] Example 1

[0057] like Figures 1 to 5 As shown, an embodiment of the present invention provides a perovskite stacked assembly, comprising a first perovskite layer 100, a transparent electrode layer 200, and a second perovskite layer 300 stacked from top to bottom; the transparent electrode layer 200 has a plurality of electrode units 210 arranged sequentially at intervals; the first perovskite layer 100 and the second perovskite layer 300 are respectively connected to adjacent electrode units 210 to form a perovskite stack group, and the perovskite stack group is connected in series along the extension direction of the transparent electrode layer 200.

[0058] That is, the perovskite tandem module provided in this embodiment of the invention, by setting a first perovskite layer 100 and a second perovskite layer 300 on the upper and lower sides of the transparent electrode layer 200, allows the sunlight incident from the front to be fully absorbed and utilized, and also absorbs the sunlight reflected from the back of the perovskite tandem module; at the same time, by sharing a single transparent electrode layer 200 between the two perovskite layers, the structure of the perovskite tandem module is simplified, the dead zone of the perovskite cell is avoided, and the technical problems of low power generation efficiency and power generation and high power generation cost of perovskite modules in the prior art are solved, thereby increasing the effective light-emitting area and power generation of the perovskite tandem module and reducing the manufacturing cost of perovskite photovoltaic cells.

[0059] Specifically, the transparent electrode layer 200 can be configured as a transparent conductive film made of ITO (indium tin oxide), which possesses good conductivity and light transmittance. The transparent electrode layer 200 is arranged in a rectangular plane along the horizontal direction and is composed of multiple electrode units 210. The electrode units 210 are rectangular flat plates, spaced horizontally at intervals of 0.01 mm to 0.1 mm. The perovskite layers are also arranged in rectangular planes, respectively, above and below the transparent electrode layer 200. The first perovskite layer 100 and the transparent electrode layer 200, and the second perovskite layer 300 and the transparent electrode layer 200 form a unidirectional circuit of electrode unit 210-perovskite layer-electrode unit 210. Thus, the first perovskite layer 100 and the second perovskite layer 300 jointly absorb sunlight from both front-facing and back-reflected sources, thereby improving the absorption efficiency of sunlight.

[0060] Furthermore, both the first perovskite layer 100 and the second perovskite layer 300 have a plurality of perovskite units 110 arranged sequentially at intervals, and any one perovskite unit 110 is connected to two adjacent electrode units 210.

[0061] Specifically, in this embodiment, the perovskite layer is composed of a plurality of perovskite units 110. The perovskite layer disposed on top of the transparent electrode layer 200 is the first perovskite layer 100, and the perovskite layer disposed at the bottom of the transparent electrode layer 200 is the second perovskite layer 300. The plurality of perovskite units 110 are spaced apart along the same horizontal direction as the electrode units 210. Each perovskite unit 110 is connected to two adjacent electrode units 210, and the perovskite units 110 in the first perovskite layer 100 and the perovskite units 110 in the second perovskite layer 300 are arranged symmetrically, with the two spaced at the same position.

[0062] Furthermore, the first perovskite layer 100 and the second perovskite layer 300 have a band gap difference.

[0063] Specifically, the first perovskite layer 100 and the second perovskite layer 300 have different band gaps, creating a band gap difference that allows them to absorb sunlight of different wavelengths, achieving comprehensive absorption of both high-wavelength and low-wavelength sunlight. Thus, sunlight irradiated from the front of the solar panel first passes through the first perovskite layer 100, then the transparent electrode layer 200, and finally the second perovskite layer 300, achieving highly efficient solar energy absorption and power generation. Conversely, sunlight irradiated from the back of the perovskite tandem module through reflection first passes through the second perovskite layer, then the transparent electrode layer 200, and finally the first perovskite layer 100.

[0064] Preferably, the band gap of the first perovskite layer 100 is in the range of 1.49-1.89; and the band gap of the second perovskite layer 300 is in the range of 1.09-1.69.

[0065] Specifically, the first perovskite layer 100 has a band gap range of 1.7–1.9 eV, absorbing high-energy photons (short-wavelength light, such as 300–700 nm) while allowing long-wavelength light to pass through to the bottom cell; the second perovskite layer 300 has a band gap range of 1.2–1.7 eV, absorbing low-energy photons (long-wavelength light, such as 700–1100 nm) that are not utilized by the top cell, thereby ensuring complete absorption of all wavelengths of sunlight by both perovskite layers.

[0066] Furthermore, the perovskite stacked assembly also includes a first carrier transport layer 400 and a second carrier transport layer 500; the first carrier transport layer 400 is disposed between the first perovskite layer 100 and the electrode layer, and the second carrier transport layer 500 is disposed between its respective second perovskite layer 300 and the electrode layer. Both the first carrier transport layer 400 and the second carrier transport layer 500 are provided with a plurality of spaced carrier transport unit groups 410, and the carrier transport unit groups 410 are configured in a one-to-one correspondence with the perovskite units 110. Each carrier transport unit group 410 includes an electron transport unit and a hole transport unit spaced apart, and the electron transport unit and the hole transport unit are respectively connected to two adjacent electrode units 210.

[0067] Specifically, both the first carrier transport layer 400 and the second carrier transport layer 500 are rectangular planar arrangements and are composed of multiple spaced-apart carrier transport unit groups 410. The carrier transport unit groups 410 are configured with the same shape and size as the perovskite unit 110 and are positioned between the perovskite unit 110 and the electrode unit 210. Each carrier transport unit group 410 includes a spaced-apart electron transport unit and a hole transport unit. The hole transport unit can be made of an organic semiconductor material, while the electron transport unit can be made of a transparent conductive oxide; both require good transparency. In this embodiment, nickel oxide and C60 can be used to form the electron transport unit and hole transport unit on the surface of the perovskite layer, respectively. In other embodiments of this application, tin oxide and nickel oxide, or tin oxide and Spiro-OMeTAD (2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene), can be selected as the materials for the hole transport unit or the electron transport unit. The electron transport unit and the hole transport unit are respectively connected to two adjacent electrode units 210, thereby allowing one perovskite unit 110 to form a circuit with two adjacent electrode units 210 through the electron transport unit and the hole transport unit, respectively.

[0068] Preferably, a first insulating portion is provided between the charge carrier transport unit groups 410 and between the perovskite units 110.

[0069] Specifically, to ensure insulation between perovskite units 110 and between carrier transport unit groups 410, insulating material can be filled into the gaps between perovskite units 110 and between carrier transport unit groups 410 to form a first insulating portion. Since the perovskite units 110 and the carrier transport layer are spaced at the same intervals, the first insulating portion is integrally formed.

[0070] Preferably, a second insulating portion is provided between the electron transport unit and the hole transport unit in each carrier transport unit group 410 and between the electrode units 210.

[0071] Specifically, to ensure insulation between electron transport units and hole transport units in the carrier transport unit group 410 and insulation between electrode units 210, insulating material can be filled into the gaps between electron transport units and hole transport units and between electrode units 210 in each carrier transport unit group 410 to form a second insulating portion. Since the spacing between electron transport units and hole transport units in each carrier transport unit group 410 is the same as the spacing between electrode units 210, the second insulating portion is integrally formed.

[0072] Furthermore, the perovskite stacked assembly also includes a substrate, a cover plate, and an adhesive film 600. The adhesive film 600 is disposed on one side of the first perovskite layer 100 away from the transparent electrode layer 200, and / or, the adhesive film is disposed on the side of the second perovskite layer 300 away from the transparent electrode layer 200. The substrate is disposed at the bottom of the first perovskite layer 100, and the cover plate is disposed at the top of the second perovskite layer 300.

[0073] Specifically, the perovskite stacked assembly provided in this embodiment is configured as a stacked structure of cover plate 700 - upper adhesive film 600 - first perovskite layer 100 - transparent electrode layer 200 - second electrode layer - lower adhesive film 600 - substrate. The cover plate, substrate, and adhesive film are laminated on top or bottom of the perovskite layer to encapsulate the perovskite bottom layer assembly. Both the cover plate and the substrate can be flat plates made of materials such as glass, ETFE, PET, TPN, PI, PC, PVC, KPF, TPO, PMMA, or CPC.

[0074] In other embodiments of this application, the adhesive film may also be disposed only between the first perovskite layer and the substrate, or between the second perovskite layer and the cover plate.

[0075] Preferably, the perovskite stack assembly further includes an aluminum nitride layer disposed on the side of the substrate near the first perovskite layer, and / or, the aluminum nitride layer is disposed on the side of the cover plate near the second perovskite layer 300.

[0076] Specifically, the aluminum nitride layer can be fabricated on the substrate via PVD or on the bottom of the cover plate. In this embodiment, the aluminum nitride is disposed on the bottom of the cover plate, between the cover plate and the second perovskite layer, thereby improving the heat dissipation effect of the perovskite module.

[0077] Example 2

[0078] The perovskite stacked assembly provided in this embodiment differs from the perovskite stacked assembly in Embodiment 1 only in the structure of the perovskite layer and the connection method between the perovskite layer and the transparent electrode layer 200. For the parts that are the same as those in Embodiment 1, this embodiment will not be described again.

[0079] In this embodiment, firstly, the first perovskite layer 100 and the second perovskite layer 300 must have a plurality of perovskite units 110 arranged sequentially at intervals, and each perovskite unit 110 is connected to two adjacent electrode units 210. In this embodiment, the perovskite layer is composed of a plurality of perovskite units 110. The perovskite layer disposed on top of the transparent electrode layer 200 is the first perovskite layer 100, and the perovskite layer disposed at the bottom of the transparent electrode layer 200 is the second perovskite layer 300. The plurality of perovskite units 110 are arranged at intervals along the same horizontal direction as the electrode units 210. Each perovskite unit 110 is connected to two adjacent electrode units 210, and the perovskite units 110 in the first perovskite layer 100 and the perovskite units 110 in the second perovskite layer 300 are arranged symmetrically, with the intervals between them at the same positions.

[0080] Secondly, a layer of MoTe2 (molybdenum ditelluride) is deposited on the first perovskite layer, and then doped with P-type and N-type elements respectively. For P-type doping, at least one of the following elements is selected: Re (rhenium), W (tungsten), Cu (copper), Au (gold), F4-TCNQ (tetrafluorotetracyanodimethylbenzoquinone), and MoOx. For N-type doping, at least one of the following elements is selected: Nb (niobium), Ti (titanium), Sn (tin), PEI (polyethyleneimine), Cs (silicon spores), and ZnO. This surface modification forms hole and electron transport units. Alternatively, heterojunctions can be constructed through surface chemical modification. For example, treating the perovskite surface with PEAI (phenylethylamine iodide) or FAI forms electron extraction transport units, while modifying the surface with thiols (such as 1,2-ethanedithiol) or oxidants (such as FeCl3) introduces hole transport units. The electron transport unit and the hole transport unit are respectively connected to two adjacent electrode units 210, so that a perovskite unit 110 can form a circuit with two adjacent electrode units 210 through the electron transport unit and the hole transport unit respectively.

[0081] Example 3

[0082] The present invention also provides a method for preparing a perovskite stacked assembly, the perovskite stacked assembly comprising the following steps:

[0083] Step 1: Prepare the first perovskite layer 100 on the cover plate;

[0084] Step 2: Prepare a transparent electrode layer 200 above the first perovskite layer 100, and prepare a second perovskite layer 300 above the transparent electrode layer 200.

[0085] Step 3: Install a cover plate on top of the second perovskite layer 300.

[0086] Specifically, the first perovskite layer 100 can be prepared on top of the aluminum nitride layer by intermittent coating. The transparent electrode layer 200 can be prepared on the first perovskite layer 100 by vapor deposition, and intermittent electrode units 210 can be formed by laser grooving. The second perovskite layer 300 is prepared in the same way as the first perovskite layer 100, prepared on top of the transparent electrode layer 200 by intermittent coating. Finally, an adhesive film 600 and a cover plate 700 can be laminated and encapsulated on top of the second perovskite layer 300 to form the perovskite stacked component structure in Example 1.

[0087] Furthermore, before preparing the first perovskite layer 100 on the cover plate, an aluminum nitride layer is prepared on the substrate, with the first perovskite layer disposed above the aluminum nitride layer.

[0088] And / or, between the top of the second perovskite layer and the cover plate, an aluminum nitride layer is prepared at the bottom of the cover plate, with the second perovskite layer disposed below the aluminum nitride layer.

[0089] Specifically, in this embodiment, a transparent glass plate is selected as both the cover plate and the substrate. An aluminum nitride layer can be formed under the cover plate by vapor deposition, and also on the lower surface of the cover plate, thus placing the aluminum nitride layer between the second perovskite layer and the cover plate, and on top of the second perovskite layer, thereby improving the heat dissipation effect of the perovskite module. In other embodiments of this application, an aluminum nitride layer can also be simultaneously vapor-deposited on the substrate, thus placing the aluminum nitride layer between the first perovskite layer and the substrate, further improving the heat dissipation effect of the perovskite module.

[0090] Furthermore, the method for fabricating a perovskite stacked assembly also includes, after fabricating a first perovskite layer 100, fabricating a first carrier transport layer 400 above the first perovskite layer 100; and after fabricating a transparent electrode layer 200, fabricating a second carrier transport layer 500 above the transparent electrode layer 200.

[0091] Specifically, the first carrier transport layer 400 and the second carrier transport layer 500 can both be formed on top of the first perovskite layer 100 and the transparent electrode layer 200 by vapor deposition, respectively, and the connection between the perovskite layer and the transparent electrode layer 200 is achieved through the carrier transport layer.

[0092] Preferably, the preparation of the carrier transport layer includes alternately preparing electron transport units and hole transport units along the horizontal direction.

[0093] Specifically, electron transport units and hole transport units are deposited using different materials, and they are prepared alternately along the horizontal direction. When depositing electron transport units, the areas separating them and the deposited areas of the hole transport units are masked; conversely, when depositing hole transport units, the deposited areas of the electron transport units are masked. In this embodiment, after coating the first perovskite layer, nickel oxide and C60 can be spaced on the surface of the first perovskite layer using a masking deposition method, thereby forming hole transport units and electron transport units. In other embodiments of this application, semiconductor materials can also be formed on the first perovskite layer by screen printing or masking sputtering. In other embodiments of this application, tin oxide and nickel oxide, or tin oxide and Spiro-OMeTAD (2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene) can also be selected as semiconductor materials. The second perovskite layer is surface-modified using the same method, which will not be described in detail in this embodiment.

[0094] Preferably, the perovskite stacked assembly preparation method uses a transparent glass plate as a cover plate. Before preparing the perovskite layer on the cover plate, the transparent glass plate is cleaned and subjected to plasma purging.

[0095] Specifically, in this embodiment, the transparent glass plate is set as an ultra-clear glass plate. Before preparing the perovskite layer on the cover plate, the transparent glass plate needs to be cleaned to remove stains from the glass surface. Subsequently, the transparent glass plate is subjected to plasma purging. Through high-energy plasma purging, the glass surface can be made smoother.

[0096] Example 4

[0097] The perovskite multilayer component preparation method provided in this embodiment differs from the perovskite multilayer component preparation method in Embodiment 3 only in the treatment of the perovskite layer and the connection method between the perovskite layer and the transparent electrode layer 200. For the parts that are the same in this embodiment as in Embodiment 3, this embodiment will not repeat them.

[0098] In this embodiment, the preparation of the carrier transport layer includes: preparing a molybdenum ditelluride layer on the perovskite layer, and doping the molybdenum ditelluride layer at intervals to form spaced electron transport units and hole transport units.

[0099] Specifically, a layer of MoTe2 (molybdenum distelluride) is deposited on the first perovskite layer, and the deposited rhenium (Re) and niobium (Nb) elements are shielded from being evaporated. Before surface doping, a portion of the perovskite layer between the two surface modification sections can be removed by laser, thereby ensuring precise doping of the two surface modification sections.

[0100] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A perovskite stack assembly, characterized by, The first perovskite layer (100), the transparent electrode layer (200) and the second perovskite layer (300) are stacked from top to bottom. The transparent electrode layer (200) has a plurality of electrode units (210) arranged in sequence. The first perovskite layer (100) and the second perovskite layer (300) are respectively connected with adjacent electrode units (210) to form perovskite layer groups, and the perovskite layer groups are connected in series along the extension direction of the transparent electrode layer (200). The first perovskite layer (100) and the second perovskite layer (300) have a band gap difference. The band gap of the first perovskite layer (100) ranges from 1.49 to 1.89, and the band gap of the second perovskite layer (300) ranges from 1.09 to 1.

69.

2. The perovskite stack assembly of claim 1, wherein, The first perovskite layer (100) and the second perovskite layer (300) each have a plurality of perovskite units (110) arranged in sequence. Any one of the perovskite units (110) is connected with two adjacent electrode units (210).

3. The perovskite layer assembly according to claim 2, wherein The perovskite layer further comprises a first carrier transport layer (400) and a second carrier transport layer (500), the first carrier transport layer (400) is arranged between the first perovskite layer (100) and the transparent electrode layer (200), and the second carrier transport layer (500) is arranged between the second perovskite layer (300) and the transparent electrode layer (200). The first carrier transport layer (400) and the second carrier transport layer (500) each are provided with a plurality of carrier transport unit groups (410) arranged in sequence. The carrier transport unit groups (410) are arranged one-to-one with the perovskite units (110). Each carrier transport unit group (410) includes an electron transport unit and a hole transport unit arranged in sequence. The electron transport unit and the hole transport unit are respectively connected with two adjacent electrode units (210).

4. The perovskite layer assembly according to claim 3, wherein A first insulation part is arranged between the carrier transport unit groups (410) and between the perovskite units (110).

5. The perovskite layer assembly according to claim 4, wherein A second insulation part is arranged between the electron transport unit and the hole transport unit in each carrier transport unit group (410) and between the electrode units (210).

6. The perovskite stack assembly of claim 1, wherein, The perovskite layer assembly further comprises a substrate, a cover plate, and an adhesive film (600), The adhesive film (600) is arranged on the side of the first perovskite layer (100) away from the transparent electrode layer (200), And / or, the adhesive film (600) is arranged on the side of the second perovskite layer (300) away from the transparent electrode layer (200), The substrate is arranged at the bottom of the first perovskite layer (100), and the cover plate is arranged at the top of the second perovskite layer (300).

7. A method for producing a perovskite tandem assembly according to any one of claims 1 to 6, characterized in that The method comprises the following steps: Step one, preparing a first perovskite layer (100) on a substrate; Step two, preparing a transparent electrode layer (200) on top of the first perovskite layer (100), and preparing a second perovskite layer (300) on top of the transparent electrode layer (200); Step three, disposing a cover plate on top of the second perovskite layer (300).

8. The method of claim 7, wherein the perovskite stack assembly is prepared by a process comprising: Also included is preparing a first carrier transport layer (400) on top of the first perovskite layer (100) after preparing the first perovskite layer (100); ​ Preparing a second carrier transport layer (500) on top of the transparent electrode layer (200) after preparing the transparent electrode layer (200).

9. The method of claim 8, wherein, Preparing the carrier transport layer includes; Alternately preparing electron transport units and hole transport units in a horizontal direction.

10. The method of claim 8, wherein the perovskite stack assembly is prepared by a process comprising: Preparing the carrier transport layer includes; ​ Preparing a layer of molybdenum ditelluride on the perovskite layer, and interval doping the layer of molybdenum ditelluride to form interval-disposed electron transport units and hole transport units.

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