Semiconductor device and method of manufacturing semiconductor device

Abstract

A semiconductor device and a method of manufacturing the same. In one example, an electronic device includes a lead comprising a conductive material. A lead among the leads includes a base portion and a protrusion extending from a lower side of the base portion. A die pad may be disposed between the leads and may include the conductive material. A lower mold may be disposed on a first lateral side of the protrusion and around a lateral side of the die pad. A lower surface coating may be applied to a lower side of the protrusion. An electronic component may be coupled to the die pad and in electrical communication with the lead. Other examples and related methods are also disclosed herein.

Description

TECHNICAL FIELD

[0001] The present disclosure relates generally to electronic devices, and more particularly, to semiconductor devices and methods for manufacturing semiconductor devices. BACKGROUND

[0002] Existing semiconductor packages and methods for forming semiconductor packages are inadequate, resulting in, for example, excessive cost, reduced reliability, relatively low performance, or too large a package size. Additional limitations and disadvantages of conventional and traditional approaches will become apparent to one of ordinary skill in the art through comparison of such approaches with the disclosure presented herein, in conjunction with the accompanying drawings. SUMMARY

[0003] An aspect of the present invention is an electronic device comprising: leads comprising an electrically conductive material, wherein a lead of the leads includes a base portion and a protrusion extending from a lower side of the base portion; a die pad between the leads and comprising the electrically conductive material; a lower mold on a first lateral side of the protrusion and around lateral sides of the die pad; a lower surface coating applied to a lower side of the protrusion; and an electronic component coupled to the die pad and in electrical communication with the leads.

[0004] The electronic device according to an aspect of the present invention further comprises an upper mold disposed above the lower mold and around the base portions and the lateral sides of the die pad.

[0005] In the electronic device according to an aspect of the present invention, the leads are separated from the die pad by the upper mold and the lower mold.

[0006] The electronic device according to an aspect of the present invention further comprises an encapsulant disposed above the electronic component, above the lower mold, and around the lateral sides of the base portions and the lateral sides of the die pad.

[0007] In the electronic device according to an aspect of the present invention, the lower surface coating is applied to a lower side of the base portion, a second lateral side of the protrusion opposite the first lateral side of the protrusion, and the lower side of the protrusion to form wettable side surfaces.

[0008] The electronic device according to an aspect of the present invention further comprises a shield disposed above the electronic component and around lateral sides of the base portions of the leads.

[0009] The electronic device according to an aspect of the present invention further comprises a ground lead integrally formed with the die pad and electrically coupled to the shield.

[0010] The electronic device according to aspects of the present disclosure further includes a second electronic component transverse to the first electronic component, a bridge including the conductive material, wherein the die pads are between the leads and the bridge, and an electromagnetic interference (EMI) shield disposed over the bridge and between the first electronic component and the second electronic component, wherein the EMI shield is electrically coupled to the shield.

[0011] In the electronic device according to aspects of the present disclosure, the EMI shield includes a wire grid, a conductive paste, or a vertical wire.

[0012] The electronic device according to aspects of the present disclosure further includes a wire cage extending around lateral sides of the electronic components and electrically connected to the shield.

[0013] In the electronic device according to aspects of the present disclosure, the leads are enclosed by the lower surface coating, the lower mold, an upper mold disposed around lateral sides of the base portions, and an upper surface coating applied to upper sides of the leads.

[0014] In the electronic device according to aspects of the present disclosure, the lower surface coating includes a silver plated layer.

[0015] In the electronic device according to aspects of the present disclosure, the lower mold is on a second lateral side of the protrusion opposite the first lateral side.

[0016] Another aspect of the present disclosure is a method of manufacturing an electronic device, including providing leads including a conductive material, wherein a lead of the leads includes a base portion and a protrusion extending from a lower side of the base portion, providing die pads including the conductive material and disposed between the leads, providing a lower mold on a first lateral side of the protrusion and around lateral sides of the die pads, applying a lower surface coating to a lower side of the protrusion, and providing electronic components coupled to the die pads and in electrical communication with the leads.

[0017] The method according to aspects of the present disclosure further includes providing an upper mold over the lower mold and around lateral sides of the base portions and the die pads.

[0018] The method according to aspects of the present disclosure further includes providing an encapsulant over the electronic components, over the lower mold, and around lateral sides of the base portions and the lateral sides of the die pads.

[0019] In the method according to another aspect of the application, the lower surface coating is applied to a lower side of the base portion, a second lateral side of the protrusion opposite the first lateral side of the protrusion, and the lower side of the protrusion to form a wettable side.

[0020] In the method according to another aspect of the application, the lead is separated from the die pad by an upper mold and the lower mold.

[0021] In the method according to another aspect of the application, the lead is enclosed by the lower surface coating, the lower mold, an upper mold disposed around a lateral side of the base portion, and an upper surface coating applied to an upper side of the lead.

[0022] Yet another aspect of the application is an electronic device comprising: a lead comprising an electrically conductive material and including a base portion and a protrusion extending from a lower side of the base portion; a die pad adjacent to the lead and comprising the electrically conductive material; a lower mold on a first lateral side of the protrusion and around a lateral side of the die pad, wherein the lower mold is between the lead and the die pad; a surface coating applied to a lower side of the protrusion to form a wettable side; and an electronic component coupled to the die pad and in electrical communication with the lead. BRIEF DESCRIPTION OF DRAWINGS

[0023] FIG. 1A and FIG. 1B A cross-sectional view of an example electronic device is shown.

[0024] FIG. 1C A top perspective view of an example electronic device is shown.

[0025] FIG. 1D A cross-sectional view of an example electronic device is shown.

[0026] FIGS. 2A-2L A cross-sectional view of an example method for manufacturing an example electronic device is shown.

[0027] FIG. 3A and FIG. 3B A cross-sectional view of an example electronic device is shown.

[0028] FIG. 3C A cross-sectional view of an example electronic device is shown.

[0029] FIGS. 4A-4H A cross-sectional view of an example method for manufacturing an example electronic device is shown.

[0030] FIG. 5A A cross-sectional view of an example electronic device is shown.

[0031] FIG. 5B A cross-sectional view of an example electronic device is shown.

[0032] FIG. 6A A top perspective view of an example electronic device is shown.

[0033] FIG. 6B and FIG. 6C Cross-sectional views of an example electronic device taken along lines A-A' and B-B' in FIG. 6A

[0034] FIGS. 7A-7H A cross-sectional view of an example method for manufacturing an example electronic device is shown.

[0035] FIG. 8 A cross-sectional view of an example electronic device is shown.

[0036] FIG. 9A A top perspective view of an example electronic device is shown.

[0037] FIG. 9B , FIG. 9C and FIG. 9D Cross-sectional views of an example electronic device taken along lines A-A', B-B', and C-C' in FIG. 9A

[0038] FIGS. 10A-10I A cross-sectional view of an example method for manufacturing an example electronic device is shown.

[0039] FIG. 11A A top perspective view of an example electronic device is shown.

[0040] FIG. 11B and FIG. 11C Cross-sectional views of an example electronic device taken along lines A-A' and B-B' in FIG. 11A

[0041] FIG. 12A A top perspective view of an example electronic device is shown.

[0042] FIG. 12B A cross-sectional view of an example electronic device taken along line A-A' in FIG. 12A DETAILED DESCRIPTION

[0043] The following discussion provides various examples of semiconductor devices and methods of manufacturing semiconductor devices. These examples are non-limiting and the scope of the appended claims should not be limited to the specific examples disclosed. In the following discussion, the terms "example" and "exemplary" mean "non-limiting."

[0044] ​​​​The drawings illustrate the general manner of construction, and descriptions and details of well-known features and techniques can be omitted to avoid unnecessarily obscuring the present disclosure. Additionally, elements in the drawings can not be to scale. For example, the dimensions of some of the elements in the drawings can be exaggerated relative to other elements to help improve understanding of examples discussed in the present disclosure. The same reference numeral represents the same element in different drawings.

[0045] The term "or" means any one or any combination of the enclosed items. As an example, "x or y" means any one of the three-element set {(x), (y), (x, y)}. As another example, "x, y, or z" means any one of the seven-element set {(x), (y), (z), (x, y), (x, z), (y, z), (x, y, z)}.

[0046] The terms "comprises", "comprising", "includes", and "including" are "open" terms and specify the presence of stated features but do not preclude the presence or addition of one or more other features.

[0047] The terms "first", "second", and the like can be used herein to describe various elements. The elements described using "first", "second", and the like are not limited by these terms. The terms "first", "second", and the like are used to distinguish one element from another. Thus, a first element discussed in the present disclosure can be termed a second element without departing from the teachings of the present disclosure.

[0048] Unless otherwise specified, the term "coupled" can be used to describe two elements that are in direct contact with each other, or to describe two elements that are indirectly coupled through one or more other elements. For example, if element A is coupled to element B, then element A can be directly in contact with element B, or indirectly coupled through an intervening element C. Similarly, the term "above" or "on" can be used to describe two elements that are in direct contact with each other, or to describe two elements that are indirectly coupled through one or more other elements. As used herein, the term coupled can refer to an electrical coupling or a mechanical coupling.

[0049] An example electronic device can include leads comprising conductive material. Leads of the leads include a base portion and a protrusion extending from a lower side of the base portion. A die pad can be disposed between the leads and can include conductive material. A lower mold can be disposed on a first lateral side of the protrusion and around lateral sides of the die pad. A lower surface coating can be applied to a lower side of the protrusion. An electronic component can be coupled to the die pad and in electrical communication with the leads.

[0050] An example method of manufacturing an electronic device can include a step of providing leads comprising an electrically conductive material. The leads of the leads can include a base portion and a protrusion extending from a lower side of the base portion. A die pad comprising an electrically conductive material is provided and can be disposed between the leads. The method can further include providing a lower mold on a first lateral side of the protrusion and around a lateral side of the die pad, applying a lower surface coating to a lower side of the protrusion, and providing an electronic component coupled to the die pad and in electrical communication with the leads.

[0051] Another example electronic device can include leads comprising an electrically conductive material. The leads can include a base portion and a protrusion extending from a lower side of the base portion. A die pad can be disposed adjacent to the leads and can comprise an electrically conductive material. A lower mold can be disposed on a first lateral side of the protrusion and around a lateral side of the die pad. The lower mold can be between the leads and the die pad. A surface coating can be applied to a lower side of the protrusion to form a wettable side. An electronic component can be coupled to the die pad and in electrical communication with the leads.

[0052] Other examples are included in the disclosure. These examples can be found in the figures, claims, or description of the disclosure.

[0053] Electronic devices of the disclosure can include routable micro lead frames (rtMLFs) made using a multi-stage molding and patterning process. The resulting electronic devices can include wettable surfaces or wettable sides that tend to improve solderability. The term "wettable side" as used herein can describe an electrically conductive structure having an L-shape or a stepped shape to laterally bound a flowable material. The leads can be patterned from a metallic material and molded together using multiple applications of moldable material and surface treatments applied on the moldable material. Electronic devices of the disclosure tend to have higher reliability and reduced metal burrs. Electronic devices of the disclosure can also include wettable sides while reducing lateral exposure of copper or other interconnect materials. Electromagnetic interference (EMI) shields can be integrated using conductive pastes, vertical wires, wire grids, wire cages, or other EMI shielding techniques.

[0054] FIG. 1A and FIG. 1B A cross-sectional view of an example electronic device 10 is shown, and FIG. 1C A top perspective view of an example electronic device 10 is shown. FIG. 1A taken along FIG. 1C line A-A' of FIG. 1, and FIG. 1B taken along FIG. 1C line B-B' of FIG. 1. In the example shown in FIG. 1A , FIG. 1B and FIG. 1C , the electronic device 10 can include a substrate 100, an electronic component 110, an encapsulant 120, and a shield 130.

[0055] Substrate 100 can include die pad 101, leads 102, lower mold 103, and upper mold 104. Leads 102 can include base portions 1021, protrusions 1022, and wettable sides 1023. Base portions 1021 and protrusions 1022 can form or define wettable sides 1023 of leads 102. Substrate 100 can also include one or more ground leads 1024. In some examples, ground leads 1024 can extend from corner to corner of die pad 101. Ground leads 1024 can be formed integrally with die pad 101 and disposed above lower mold 103. Base portion 1021 of each lead 102 can include a base upper side 1021a, a base lower side 1021b, and a base lateral side 1021c. Protrusion 1022 can include a protrusion lower side 1022a and a protrusion lateral side 1022b. In FIG. 1C In some examples, the "cross-hatched" regions shown on leads 102 and ground leads 1024 identify regions of leads having a reduced thickness or half thickness compared to the thickness of leads 102 or other regions of die pad 101.

[0056] In some examples, lower surface coating 105 can be positioned along the bottom sides of die pad 101 and leads 102 (e.g., along wettable sides 1023 and protrusion lower sides 1022a). Upper surface coating 106 can be positioned along the top sides of die pad 101 and leads 102 (e.g., along base upper sides 1021a and ground leads 1024). Electronic assembly 110 can include assembly interconnects 111. Assembly interconnects 111 can electrically couple electronic assembly to substrate 100. Attachment material 112 can couple electronic assembly 110 to die pad 101.

[0057] Substrate 100, encapsulant 120, and shield 130 can be referred to as a semiconductor package. The package can protect electronic assembly 110 from external elements and / or external exposure. The package can also provide electrical coupling between external electronic assemblies and electronic assembly 110.

[0058] FIG. 1D A cross-sectional view of example electronic device 10' is shown. In the example shown in FIG. 1D Electronic device 10' is similar to electronic device 10 shown in FIG. 1A In electronic device 10', lateral sides of upper mold 104, as well as top and lateral sides of encapsulant 120, are exposed.

[0059] FIGS. 2A-2L A cross-sectional view of an example method for manufacturing example electronic device 10 or 10' is shown. In some examples, the method is performed by FIGS. 2A-2LThe illustrated method can be referred to as a "wettable flank first" or "die last" process.

[0060] FIG. 2A A cross-sectional view of an electronic device 10 or 10' at an early stage of manufacturing is shown. In the example shown in FIG. 2A In the example shown in FIG. 1, a raw material 100' of the substrate 100 can be provided. The raw material 100' can include a generally planar top side and a generally planar bottom side opposite the top side. The raw material 100' can include or be referred to as a conductor or conductive sheet. In some examples, the raw material 100' can include a conductive material having a coefficient of thermal expansion similar to silicon and having excellent thermal or electrical conductivity. In some examples, the raw material 100' can include Cu, Cu-Fe-P, Cu-Ni-Si, or Ni-Fe (e.g., Alloy 42 includes approximately 42% Ni and the balance Fe). The raw material 100' can be typically provided as a thick rolled or cold rolled metal. The thickness of the raw material 100' can be in a range of approximately 125 μιη (microns) to approximately 250 μιη. The raw material 100' can provide the die pad 101, the leads 102, and the ground lead 1024 of the substrate 100, as described below.

[0061] FIG. 2B A cross-sectional view of an electronic device 10 or 10' at a later stage of manufacturing is shown. In the example shown in FIG. 2B In the example shown in FIG. 2, a recess or groove 107 is provided in the lower (or first) side of the raw material 100'. In some examples, the recess 107 can be formed by etching the raw material 100'. For example, a photoresist can be applied or laminated to the lower side of the raw material 100', and then a portion of the lower side of the raw material 100' (e.g., the portion of the raw material 100' to be etched and removed) can be treated by an exposure and development process. By providing an etchant to the exposed lower side of the raw material 100', a region of the lower side of the raw material 100' can be removed, thereby forming the recess 107 in the lower side of the raw material 100'. In some examples, the depth of the recess 107 can be approximately 50% to approximately 70% of the total thickness of the raw material 100'. As used herein with reference to linear distances, the term approximately can mean + / - 5%, + / - 10%, + / - 15%, + / - 20%, or + / - 25%. After the etching process on the lower side is completed, the remaining photoresist can be removed.

[0062] FIG. 2C A cross-sectional view of an electronic device 10 or 10' at a later stage of manufacturing is shown. In the example shown in FIG. 2C In the example shown in FIG. 3, a lower mold 103 is provided in the recess 107 FIG. 2BThe lower mold 103 can fill the recess 107 in the raw material 100'. In some examples, the lower mold 103 can physically or chemically protect the raw material 100' (e.g., the die pad 101, the leads 102, and the ground lead 1024) and / or provide electrical isolation between the die pad 101, the leads 102, and the ground lead 1024, as described below. The lower mold 103 can include a material that has excellent adhesion to the raw material 100'. The lower mold 103 can include a material that has good thermal radiation properties to expel heat from the raw material 100'. The lower mold 103 can have excellent formability to form a desired shape. In some examples, the lower mold 103 can include or be referred to as a resin, a polymer with fillers, an epoxy molding compound, an encapsulant, or a protective material. In some examples, the lower mold 103 can be provided by a transfer molding method using a molding material provided in a tablet form, a compression molding method using a molding material (e.g., a resin) provided in a powder (powder / particle) form, a liquid molding method using a molding material provided in a liquid form, or a vacuum lamination method using a molding material provided in a film form. In some examples, after the lower mold 103 is provided, a grinding process can be performed to planarize the lower side of the lower mold 103 and the raw material 100'. In response to the grinding process, the lower side of the raw material 100' and the lower side of the lower mold 103 can be coplanar (e.g., substantially on the same plane).

[0063] FIG. 2D Cross-sectional views of electronic devices 10 or 10' at later manufacturing stages are shown. In the example shown in FIG. 1, the raw material 100' is provided in a wafer form. In the example shown in FIG. 2, the raw material 100' is provided in a die form. In the example shown in FIG. 3, the raw material 100' is provided in a package form. FIG. 2D In the example shown in FIG. 1, a recess or groove 108 is provided in the upper (or second) side of the raw material 100'. In some examples, the recess 108 can be formed by etching the raw material 100'. For example, a photoresist can be applied or laminated to the upper side of the raw material 100', and then a portion of the upper side of the raw material 100' (e.g., a portion of the raw material 100' to be etched and removed) can be processed through an exposure and development process. By selectively providing an etchant to the exposed upper side of the raw material 100', a region of the upper side of the raw material 100' can be removed, thereby forming the recess 108 in the upper side of the raw material 100'.

[0064] According to various examples, the recess 108 can be located at a position corresponding to the recess 107 (e.g., the recess 108 can be aligned with the recess 107) in the raw material 100'. In some examples, the recess 108 can be located at a position corresponding to the recess 107 (e.g., the recess 108 can be aligned with the recess 107) in the raw material 100' and the recess 108 can be located at a position corresponding to the recess 107 (e.g., the recess 108 can be aligned with the recess 107) in the lower mold 103. FIG. 2B) and the footprint of lower mold 103 in the lower side of raw material 100', in an area vertically overlapping with the footprint, or within the footprint. In some examples, recess 108 may be provided in an area that does not vertically overlap with recess 107 and the footprint of lower mold 103, or outside the footprint. In some examples, the depth of recess 108 may be approximately 30% to approximately 50% of the total thickness of raw material 100'. In the area where recess 108 vertically overlaps recess 107 and lower mold 103, the combination of recess 107 and recess 108 may extend completely through raw material 100'. Some areas of lower mold 103 may be exposed through the upper side of raw material 100' via recess 108. After the etching process on the upper side is completed, the remaining photoresist may be removed.

[0065] FIG. 2E A cross-sectional view of an electronic device 10 or 10' is shown in a later stage of manufacturing. FIG. 2E In the example shown in FIG, the upper mold 104 is provided in the recess 108 ( FIG. 2D ). The upper mold 104 can fill the recess 108 on the upper side of the raw material 100'. In some examples, the upper mold 104 can be coupled to the lower mold 103 or in contact with the lower mold 103. In some examples, the materials and methods for providing the upper mold 104 can be similar to or the same as the materials and methods for providing the lower mold 103 described above. In some examples, after providing the upper mold 104, a grinding process can flatten the upper mold 104 and the upper side of the raw material 100'. In response to the grinding process, the upper side of the raw material 100' and the upper side of the upper mold 104 can be coplanar.

[0066] FIG. 2F A cross-sectional view of an electronic device 10 or 10' is shown in a later stage of manufacturing. FIG. 2FIn the example shown in , wettable flanks 1023 are provided in the lower side of raw material 100'. In some examples, wettable flanks 1023 can be provided using an etching process (e.g., portions of raw material 100' can be removed via etching). For example, photoresist can be applied or laminated to the lower side of raw material 100' and lower mold 103, and a portion of the lower side of raw material 100' (i.e., the area to be etched away) can be exposed. By providing an etchant to the exposed lower side of raw material 100', a portion of raw material 100' can be removed to provide wettable flanks 1023. In some examples, a portion of lower mold 103 can also be removed during the etching process used to form wettable flanks 1023. After etching, the remaining photoresist can be removed. In some examples, the depth of wettable flanks 1023 can be approximately 50% to approximately 70% of the total thickness of raw material 100'. In some examples, after the wettable side 1023 is formed, the upper mold 104 can be exposed from the lower side of the raw material 100 ′.

[0067] According to various examples, the die pad 101, the lead 102, the ground lead 1024 ( FIG. 1B and FIG. 1C ), the lower mold 103, and the substrate 100 of the upper mold can be provided by the above-described process. The die pad 101, leads 102, and ground leads 1024 of the substrate 100 can be provided from raw material 100'. In some examples, the substrate 100 may include or be referred to as a lead frame, a routable lead frame, a routable molded lead frame, a molded lead frame, or a molded substrate. In some examples, to improve production efficiency, the substrate 100 may be prepared in a matrix or strip form having multiple rows and columns of substrates 100. In some examples, the substrate 100 may be prepared in the form of a disk or square panel, with multiple substrates 100 arranged within the disk or square panel.

[0068] As described above, each of the leads 102 may include a base (or upper) portion 1021 and a protrusion (or lower portion) 1022 extending downward from the base portion 1021. The base portion 1021 may include a substantially planar base upper side 1021a, a substantially planar base lower side 1021b opposite the base upper side 1021a, and a base lateral side 1021c extending between the base upper side 1021a and the base lower side 1021b. The thickness of the base portion 1021, as measured between the base upper side 1021a and the base lower side 1021b, may be in the range of approximately 50 μm to approximately 100 μm. The protrusion 1022 may include a substantially planar protrusion lower side 1022a and a substantially planar protrusion lateral side 1022b extending between the protrusion lower side 1022a and the base lower side 1021b. In some examples, the width of the protrusion 1022, as measured along the protrusion lower side 1022a, can be less than the width of the base portion 1021, as measured along the base upper side 1021a. For example, the thickness of the protrusion 1022, as measured between the protrusion lower side 1022a and the base lower side 1021b, can range from about 25 μm to about 250 μm, about 35 μm to about 125 μm, about 75 μm to about 200 μm, about 125 μm to about 150 μm, or other suitable lengths. The wettable side 1023 can include or be defined by the base lower side 1021b and the protrusion lateral side 1022b and can be exposed through the lower mold 103 and the upper mold 104. The wettable side 1023 can provide excellent solder adhesion by increasing the surface area of ​​the lead 102 exposed from the lower mold 103 or the upper mold 104. In addition, forming the wettable side surfaces 1023 using an etching process rather than a mechanical process (e.g., stamping or cutting) can reduce or prevent the generation of metal burrs at the edges of the raw material 100'. Preventing or reducing the occurrence of burrs tends to improve electrical performance and / or reliability because the occurrence of physical bridging (i.e., short circuits) between leads that may be caused by burrs and / or environmentally induced Cu migration is reduced or prevented.

[0069] FIG. 2G A cross-sectional view of an electronic device 10 or 10' is shown in a later stage of manufacturing. FIG. 2G In the example shown in FIG, a surface finishing process may be performed. A lower surface coating 105 may be provided on the lower side of the die pad 101 and the lead 102. An upper surface coating 106 may be provided on the die pad 101, the lead 102, and the ground lead 1024 ( FIG. 2BThe upper surface coating 106 can be provided on the upper side of the substrate 1021a in some examples. In some examples, the lower surface coating 105 can be provided on the lower side of the bump 1022a, and the lateral side of the bump 1022b and the lower side of the substrate 1021b exposed by the lower mold 103 (e.g., on the regions of the wettable side 1023).

[0070] The lower surface coating 105 and the upper surface coating 106 can include a plating layer or a diffusion region. In some examples, the plating layer can include silver (Ag), gold (Au), platinum (Pt), or palladium (Pd). In some examples, a plating silver layer of about 0.5 μιη to about 2 μιη can be provided on the surfaces of the die pad 101 and the leads 102 exposed by the lower mold 103 or the upper mold 104 of the substrate 100. In some examples, a mask can be provided on the substrate 100 with regions of the die pad 101 and the leads 102 exposed from the mask, and an electroplating solution can be sprayed on the regions of the die pad 101 and the leads 102 exposed from the mask, or the substrate 100 can be immersed in a silver plating bath. In some examples, the plating silver layer can diffuse into the die pad 101 and the leads 102 by heat treatment to provide a silver diffusion region. The heat treatment temperature and the heat treatment time can be adjusted in various ways depending on the type of the substrate 100. The surface coating can be a metal with good electrical conductivity and oxidation resistance, and can improve adhesion with gold wire, copper wire, or solder.

[0071] The lower surface coating 105 provided on the wettable side 1023 and the lower side of the bump 1022a can enclose the leads 102 or isolate the leads 102 from ambient air. The regions of the leads 102 without the lower surface coating 105 or the upper surface coating 106 can be inside the lower mold 103 or the upper mold 104. For example, the substrate lateral side 1021c without the lower surface coating 105 or the upper surface coating 106 can be in the upper mold 104, and the bump lateral side 1022b and the one or more substrate lower sides 1021b without the lower surface coating 105 can be in the lower mold 103. Enclosing or completely surrounding the leads 102 with the upper surface coating 106, the lower surface coating 105, the upper mold 104, and the lower mold 103 can protect the leads 102 from oxidation by exposure to ambient conditions. The wettable side 1023 can also be protected from oxidation by providing the lower surface coating 105 on the entire surface of the wettable side 1023. The upper surface coating 106 provided on the leads 102 can enable the component interconnect 111 FIG. 2I) to more easily connect to the leads 102. When the electronic device 10 or 10' is mounted on an external device, the wettable sides 1023 and / or the lower surface coating 105 tend to improve solder adhesion. When the electronic device 10 or 10' is mounted on an external device later in the process, the wettable sides 1023 also tend to allow and / or improve visual inspection.

[0072] FIG. 2H A cross-sectional view of an electronic device 10 or 10' is shown in a later stage of manufacturing. FIG. 2H In the example shown in FIG, electronic component 110 is provided over die pad 101. Electronic component 110 may include or be referred to as a semiconductor die, a semiconductor chip, a semiconductor package, a semiconductor device, an active component, or a passive component. Electronic component 110 may include or be referred to as a digital signal processor (DSP), a network processor, a power management unit, an audio processor, a wireless baseband system-on-chip (SoC) processor, a sensor, a custom integrated circuit, a memory, an antenna-on-package (AoP), an antenna-in-package (AiP), a 5G NR millimeter-wave (mmWave) module, a sub-6 gigahertz (GHz) radio frequency (RF) module, or an integrated passive device (IPD).

[0073] In some examples, the electronic component 110 may be coupled to the die pad 101 via an attachment material 112. In some examples, the attachment material 112 may include or be referred to as an adhesive, an adhesive film, or a die attach film. In some examples, the electronic component 110 may be coupled to the die pad 101 via an attachment material 112 comprising a silver epoxy paste or a silver-filled epoxy. In some examples, the attachment material 112 may first be attached to the die pad 101, and then the electronic component 110 may be pressed against the attachment material 112 to couple the electronic component 110 to the die pad 101. In some examples, the attachment material 112 may first be attached to the electronic component 110, and then the electronic component 110 with the attachment material 112 coupled thereto may be mounted on the die pad 101. In some examples, heat may be applied while applying pressure. The thickness of the electronic component 110 may be in the range of approximately 50 μm to approximately 800 μm. In some examples, electronic component 110 may perform various operations such as processing, amplification, filtering, or data storage.

[0074] FIG. 2I A cross-sectional view of an electronic device 10 or 10' is shown in a later stage of manufacturing. FIG. 2IIn the examples shown in FIGS. 1-3, a component interconnect 111 is provided. According to various examples, one end of the component interconnect 111 can be coupled to the electronic component 110, and the other end of the component interconnect 111 can be coupled to the lead 102. In some examples, one end of the component interconnect 111 can be joined to the electronic component 110, and the other end can be joined to the die pad 101 (e.g., a ground component interconnect 111). The electronic component 110 can be in electrical communication with the lead 102 through the component interconnect 111. The component interconnect 111 can comprise or be referred to as a wire (e.g., a gold or copper wire). The diameter of the component interconnect 111 can be in the range of about 10 μιη to about 50 μιη. The component interconnect 111 can transmit electrical signals between the electronic component 110 and the lead 102. The component interconnect 111 can transmit electrical signals (e.g., ground signals) between the electronic component 110 and the die pad 101.

[0075] FIG. 2J Cross-sectional views of the electronic device 10 or 10' at later stages of manufacturing are shown. In FIG. 2J In the examples shown in FIGS. 1-3, a component interconnect 111 is provided. According to various examples, one end of the component interconnect 111 can be coupled to the electronic component 110, and the other end of the component interconnect 111 can be coupled to the lead 102. In some examples, one end of the component interconnect 111 can be joined to the electronic component 110, and the other end can be joined to the die pad 101 (e.g., a ground component interconnect 111). The electronic component 110 can be in electrical communication with the lead 102 through the component interconnect 111. The component interconnect 111 can comprise or be referred to as a wire (e.g., a gold or copper wire). The diameter of the component interconnect 111 can be in the range of about 10 μιη to about 50 μιη. The component interconnect 111 can transmit electrical signals between the electronic component 110 and the lead 102. The component interconnect 111 can transmit electrical signals (e.g., ground signals) between the electronic component 110 and the die pad 101. FIG. 1B In some examples, the encapsulant 120 can contact the upper surface coating 106 of the die pad 101, the lead 102, and the ground lead 1024. The encapsulant 120 can comprise or be referred to as an epoxy molding compound, a resin, a filler-reinforced polymer, a class B compression molding film, or a gel. In some examples, the encapsulant 120 can comprise an epoxy or phenolic resin, carbon black, and silica fillers. In some examples, the encapsulant 120 can be provided by compression molding, transfer molding, liquid encapsulation molding, vacuum lamination, paste printing, or film-assisted molding. Compression molding can be a process for pre-supplying a fluid molding material (e.g., a resin) into a mold and then placing the electronic component into the mold and solidifying the fluid molding material. Transfer molding is a process for supplying a molding material around the electronic component using a gate (a supply port). The thickness of the encapsulant 120 can be in the range of about 100 μιη to about 1000 μιη. The encapsulant 120 can protect the electronic component 110 and the component interconnect 111 from exposure to external elements or environments, and can rapidly dissipate heat from the electronic component 110. The material of the encapsulant 120 can be the same as or different from the material of the upper mold 104 and / or the lower mold 103.

[0076] FIG. 2K Cross-sectional views of the electronic device 10 or 10' at later stages of manufacturing are shown. InFIG. 2K In the example shown in , a singulation process is performed to provide individual discrete electronic devices 10 and 10 ′. For example, a singulation tool (e.g., a saw, a blade, a cutter, a laser, etc.) can saw or otherwise cut through the encapsulation 120 and the substrate 100 to separate the individual electronic devices 10 and 10 ′ from each other. According to various examples, the singulation tool (e.g., a diamond blade wheel) saws through the upper mold 104 and the lower mold 103 of the substrate 100. The ground lead 1024 ( FIG. 1B ) may also be sawn while other leads 102 remain unsawed. For example, a portion of the top mold 104 is located between the base portion 1021 and the lateral sides (i.e., sawn edges) of the top mold 104. In various examples, a portion of the ground lead 1024 (e.g., one or more sawn lateral sides) may be exposed through the encapsulant 120, the upper mold 104, and the lower mold 103, as shown. FIG. 1B and FIG. 1C . The leads 102 may not be sawn, and thus the leads 102 may remain completely or substantially covered along the lateral sides of the substrate 100. Singulating through the upper die 104 and the lower die 103 without sawing through the leads 102 may reduce or prevent the generation of metal burrs at the lateral sides of the substrate 100. Preventing or reducing the occurrence of burrs and / or having the leads 102 covered by the top die 104 tends to increase electrical performance and / or reliability because the occurrence of physical bridging (i.e., electrical shorts) between the leads 102, which may be caused by metal burrs and / or environmentally induced Cu migration, is reduced or prevented.

[0077] In response to singulation, the lateral sides of the encapsulant 120 and the substrate 100 may be coplanar. In some examples, the lateral sides of the encapsulant 120, the lateral sides of the upper mold 104, and the lateral sides of the lower mold 103 may be coplanar. In response to singulation, the lateral sides of the encapsulant 120, the lateral sides of the upper mold 104, and the lateral sides of the lower mold 103 are exposed to the outside of the device. In this manner, an electronic device 10' may be provided.

[0078] FIG. 2L A cross-sectional view of the electronic device 10 is shown in a later stage of manufacturing. FIG. 2L In the example shown in FIG, a shield 130 is provided. The shield 130 can cover the upper side and the lateral sides of the encapsulation 120. In some examples, the shield 130 can cover the lateral sides of the substrate 100. In some examples, the shield 130 can cover the lateral sides of the upper mold 104. In some examples, the shield 130 can be electrically connected to the exposed ground lead 1024 ( FIG. 1B). The shield 130 can be spaced apart from the signal or power leads 102, and the upper mold 104 can be between the signal or power leads 102 and the shield 130. The shield 130 can include or be referred to as an EMI shield or a conformal shield. In some examples, the shield 130 can be provided by a sputtering process, a plating process, a spraying process, a plasma deposition process, or a tape wrapping process. In some examples, in a sputtering process, a conformal shield is deposited in a vacuum using a target material, which can provide improved density, contact resistance. Thin film adhesion of the shield can control thickness and have a high yield.

[0079] In some examples, the sputtering process can be performed multiple times using the same metal or different metals. In some examples, the plating process can be performed, and the plating process can be an electroless method of plating by chemical reaction without using an external power source. In some examples, the plating process can allow the reaction to proceed continuously by a spontaneous reduction reaction by simultaneously adding metal ions and a reducing agent to a plating solution. In some examples, an electrolytic plating process can be performed after the electroless plating process. In some examples, the spraying process can be performed, and the spraying process can include coating using a conductive mixed paint formed by mixing a conductive powder or flake with a resin such as silicone, epoxy, acrylic, or polyurethane. Since an ink-type shielding material containing a conductive powder is applied by spraying, the spraying process exhibits high productivity and can be applied to various types of devices. In some examples, multiple spraying can also be performed. In some examples, the shield 130 can include copper (Cu), aluminum (Al), nickel (Ni), palladium (Pd), gold (Au), silver (Ag), chromium (Cr), zinc (Zn), tin (Sn), titanium (Ti), iron (Fe), carbon black, or alloys thereof. In some examples, the shield 130 can also include a resin such as silicone, epoxy, acrylic, or polyurethane, and a conductive powder. In some examples, the thickness of the shield 130 can be in a range of about 3 μm to about 10 μm. The shield 130 can suppress the electronic component 110 from radiating electromagnetic waves. The shield 130 can also suppress electromagnetic waves from penetrating into the electronic component 110.

[0080] FIG. 3A and FIG. 3B A cross-sectional view of an example electronic device 20 is shown. FIG. 3A and FIG. 3B The electronic device 20 shown in FIG. 1A and FIG. 1B, wherein the upper mold 104 is omitted. In the electronic device 20, the encapsulant 120 can contact the lateral sides of the die pad 101 and the ground lead 1024. In the electronic device 20, the encapsulant 120 can contact the base lateral side 1021c of the lead 102. In the electronic device 20, the encapsulant 120 can contact the upper side of the lower mold 103. In some examples, the lower side of the encapsulant 120 and the base lower side 1021b of the lead 102 can be coplanar (i.e., located along the same plane or forming substantially the same plane).

[0081] FIG. 3C A cross-sectional view of an example electronic device 20 ′ is shown. FIG. 3C The electronic device 20' shown in FIG. FIG. 3A and FIG. 3B , wherein the shield 130 is omitted. In the electronic device 20 ′, the upper side and lateral sides of the encapsulation 120 may be exposed.

[0082] FIGS. 4A-4H A cross-sectional view of an example method for manufacturing an example electronic device 20 or 20' is shown. In some examples, FIGS. 4A-4H The process shown in FIG. 1 may be referred to as a "wettable flank last" or "die first" process. The process for manufacturing the electronic device 20 or 20' may also include FIGS. 2A-2D , such as a process for providing a raw material 100 ′, a process for etching a lower side of the raw material 100 ′, a process for providing a lower mold 103, and a process for etching an upper side of the raw material 100 ′.

[0083] FIG. 4A A cross-sectional view of an electronic device 20 or 20' is shown at a stage of manufacture in which lower and upper etching and lower molding have been performed (e.g., in FIG. FIGS. 2A-2D After the steps described in ). FIG. 4A In the example shown in FIG, the upper surface coating 106 is provided on the die pad 101 and the lead 102. For example, the upper surface coating 106 can be provided on the base upper side 1021a of the lead 102. The materials and processes for providing the upper surface coating 106 can be the same as those described above with reference to FIG. FIG. 2G The processes described are similar or identical.

[0084] FIG. 4B A cross-sectional view of an electronic device 20 or 20' is shown in a later stage of manufacturing. FIG. 4BIn the example shown in FIG. 1, the electronic component 110 is coupled to the die pad 101. In some examples, the electronic component 110 can be coupled to the die pad 101 via an attachment material 112, as previously described.

[0085] FIG. 4C A cross-sectional view of the electronic device 20 or 20' is shown at a later stage of manufacturing. In the example shown in FIG. 2, the electronic component 110 is coupled to the die pad 101. In some examples, the electronic component 110 can be coupled to the die pad 101 via an attachment material 112, as previously described. FIG. 4C In the example shown in FIG. 3, a component interconnect 111 is provided. The component interconnect 111 electrically couples the electronic component 110 to the lead 102. In some examples, the component interconnect 111 can electrically couple the electronic component 110 to the die pad 101 and / or the ground lead 1024 FIG. 3B ). The component interconnect 111 can comprise a wire, as previously described.

[0086] FIG. 4D A cross-sectional view of the electronic device 20 or 20' is shown at a later stage of manufacturing. In the example shown in FIG. 4, the electronic component 110 is coupled to the die pad 101. In some examples, the electronic component 110 can be coupled to the die pad 101 via an attachment material 112, as previously described. FIG. 4D In the example shown in FIG. 5, an encapsulant 120 is provided over the electronic component 110 and the substrate 100, which includes the die pad 101, the lead 102, and the lower mold 103. The encapsulant 120 can cover the electronic component 110 and the component interconnect 111, as well as the substrate 100. The encapsulant 120 can contact the lateral sides of the die pad 101. The encapsulant 120 can contact the base lateral side 1021c of the lead 102. The encapsulant 120 can contact the lower mold 103. The materials and processes used to provide the encapsulant 120 can be similar or identical to those described above with reference to FIG. 2J .

[0087] FIG. 4E A cross-sectional view of the electronic device 20 or 20' is shown at a later stage of manufacturing. In the example shown in FIG. 6, the electronic component 110 is coupled to the die pad 101. In some examples, the electronic component 110 can be coupled to the die pad 101 via an attachment material 112, as previously described. FIG. 4E In the example shown in FIG. 7, a wettable side 1023 can be provided. In some examples, the process used to form the wettable side 1023 can be similar or identical to those described above with reference to FIG. 2F . In response to forming the wettable side 1023, a region of the encapsulant 120 adjacent to the wettable side 1023 can be exposed from the lower side of the substrate 100 (e.g., can be exposed by the lower mold 103).

[0088] FIG. 4F A cross-sectional view of the electronic device 20 or 20' is shown at a later stage of manufacturing. In the example shown in FIG. 8, the electronic component 110 is coupled to the die pad 101. In some examples, the electronic component 110 can be coupled to the die pad 101 via an attachment material 112, as previously described. FIG. 4FIn the examples shown in FIGS. 1-3, a lower surface coating 105 is provided. The lower surface coating 105 can be provided on the wettable side 1023 of the lead 102. In some examples, the lower surface coating 105 can be provided on the exposed portions of the base lower side 1021b and the protrusion lateral side 1022b, and on the protrusion lower side 1022a. The materials and processes used to provide the lower surface coating 105 can be similar or identical to those described above with reference to the upper surface coating 105. FIG. 2G The processes described are similar or identical.

[0089] FIG. 4G A cross-sectional view of an electronic device 20 or 20' in a later stage of manufacture is shown. In the example shown in FIG. 3, the lower surface coating 105 is provided on the exposed portions of the base lower side 1021b and the protrusion lateral side 1022b, and on the protrusion lower side 1022a. The materials and processes used to provide the lower surface coating 105 can be similar or identical to those described above with reference to the upper surface coating 105. FIG. 4G In the examples shown in FIGS. 1-3, a singulation process is performed to provide individual discrete electronic devices 20 or 20'. For example, a singulation tool (e.g., a saw, a blade, a cutter, a laser, etc.) can saw or otherwise cut through the encapsulant 120 and the substrate 100 to separate the individual electronic devices 20 and 20' from one another. The singulation process can be performed. By sawing through the encapsulant 120 and the substrate 100 using the singulation tool, the individual electronic devices 20 each including the substrate 100 can be separated from one another. The singulation process can be similar or identical to that described above with reference to the singulation process 300. FIG. 2K The processes described are similar or identical.

[0090] In response to singulation, the lateral sides of the encapsulant 120 and the substrate 100 can be coplanar. For example, the lateral sides of the encapsulant 120, the lateral sides of the lower mold 103 can be coplanar. In response to singulation, the lateral sides of the encapsulant 120 and the lateral sides of the lower mold 103 are exposed at the outer side of the device. In this manner, the electronic device 20' can be provided.

[0091] Singulating through the encapsulant 120 and the lower mold 103 without sawing through the lead 102 can reduce or prevent the creation of metal burrs at the lateral sides of the substrate 100. Preventing or reducing the occurrence of burrs and / or tending to cover the lead 102 with the encapsulant 120 tends to increase electrical performance and / or reliability, as the occurrence of physical bridging (i.e., electrical shorts) between the leads 102 that can be caused by Cu migration induced by metal burrs and / or the environment is reduced or prevented.

[0092] FIG. 4H A cross-sectional view of an electronic device 20' in a later stage of manufacture is shown. In the example shown in FIG. 3, the lower surface coating 105 is provided on the exposed portions of the base lower side 1021b and the protrusion lateral side 1022b, and on the protrusion lower side 1022a. The materials and processes used to provide the lower surface coating 105 can be similar or identical to those described above with reference to the upper surface coating 105. FIG. 4H In the examples shown in FIGS. 1-3, a singulation process is performed to provide individual discrete electronic devices 20 or 20'. For example, a singulation tool (e.g., a saw, a blade, a cutter, a laser, etc.) can saw or otherwise cut through the encapsulant 120 and the substrate 100 to separate the individual electronic devices 20 and 20' from one another. The singulation process can be performed. By sawing through the encapsulant 120 and the substrate 100 using the singulation tool, the individual electronic devices 20 each including the substrate 100 can be separated from one another. The singulation process can be similar or identical to that described above with reference to the singulation process 300. FIG. 2L The processes described are similar or identical.

[0093] FIG. 5A A cross-sectional view of an example electronic device 30 is shown. FIG. 5AThe electronic device 30 shown in FIG. FIG. 3A and FIG. 3B , without having a wettable side. In some instances, at least two rows of leads 102 may be arranged in an array or other pattern (e.g., a staggered or zigzag pattern) on a first side (e.g., the left side) of the die pad 101. Two or more rows of leads 102 may be arranged in an array or other pattern on a second side (e.g., the right side) of the die pad 101 opposite the first side. In some instances, two or more rows of leads 102 may be arranged in an array or other pattern on a third side of the die pad 101 extending between the first and second sides of the die pad 101, and two or more rows of leads 102 may be arranged in an array or other pattern on a fourth side of the die pad 101 opposite the third side and extending between the first and second sides of the die pad 101. In this regard, the lead pattern may surround the die pad 101.

[0094] In some instances, the lead 102 may include or be referred to as an isolation pad. A lower mold 103 may be provided between the lead 102 and the shield 130. Multiple isolation pads may be arranged in rows and columns around one or more sides of the die pad 101. The isolation pads may be formed with a narrower pitch than other leads, which may increase the number of input / output pads and the performance of the electronic device 30. The shield 130 enables the electronic device 30 to have high design flexibility, including the ability to incorporate RF (radio frequency) devices. In addition, due to the high design flexibility, the electronic device 30 may include a multi-chip module (MCM) or a system-in-package (SiP).

[0095] FIG. 5B A cross-sectional view of an example electronic device 30' is shown. FIG. 5B The electronic device 30' shown in FIG. FIG. 5A , except that the shield 130 is omitted. In the electronic device 30', the upper and lateral sides of the encapsulation 120 and the lateral sides of the lower mold 103 can be exposed to environmental conditions without the presence of the shield.

[0096] FIG. 6A A top perspective view of an example electronic device 40 is shown. FIG. 6B and FIG. 6C A cross-sectional view of an electronic device 40 is shown. FIG. 6B Instructions along the FIG. 6A 1 is a cross-sectional view of the electronic device 40 taken along line AA′. FIG. 6C Instructions along the FIG. 6A 8 is a cross-sectional view of the electronic device 40 taken along line BB′.

[0097] In various instances, FIG. 6A 、FIG. 6B and FIG. 6C The electronic device 40 shown in FIG. 1A , FIG. 1B and FIG. 1C may be similar to the electronic device 10 shown in FIG. 6B and FIG. 6C , with the substrate 100 having a bridge 1025. The first electronic component 110a and the second electronic component 110b can be provided on the substrate 100, and the conductor 140 may be provided between the first electronic component 110a and the second electronic component 110b. The conductor 140 can act as an EMI shield. The first electronic component 110a can be electrically connected to the lead 102 and the bridge 1025 by a component interconnect 111a. The second electronic component 110b can be electrically connected to the lead 102 and the bridge 1025 by a component interconnect 111b. The conductor 140 can be electrically connected to and / or can contact the shield 130. The conductor 140 can be spaced apart from the bridge 1025. For example, the encapsulant 120 can be vertically between the conductor 140 and the bridge 1025. The conductor 140 can vertically overlap multiple bridges 1025, and the bridges 1025 can electrically connect the first electronic component 110a and the second electronic component 110b.

[0098] FIGS. 7A-7H A cross-sectional view showing an example method for manufacturing the example electronic device 40 is shown. FIG. 7A , FIG. 7C , FIG. 7E and FIG. 7G correspond to line A-A' in FIG. 6A . FIG. 7B , FIG. 7D , FIG. 7F and FIG. 7H correspond to line B-B' in FIG. 6A .

[0099] FIG. 7A and FIG. 7B show cross-sectional views of the electronic device 40 at later stages of manufacturing. For example, the electronic device 40 shown in FIG. 7A and FIG. 7B may be provided by a manufacturing process similar to the manufacturing process shown in FIGS. 2A-2J . In some examples, the electronic device 40 can be provided using the manufacturing process shown in FIGS. 4A-4F . FIG. 7A and FIG. 7BThe electronic device 40 shown in the middle includes a first electronic component 110a and a second electronic component 110b disposed over respective die pads 101. The first electronic component 110a can be laterally spaced apart from the second electronic component 110b. The substrate 100 can include one or more bridges 1025. In some examples, the bridges 1025 can be made of a material similar to the leads 102 and the die pads 101. Lateral sides of the one or more bridges 1025 can be in and / or can contact the upper mold 104. Lower sides of the one or more bridges 1025 can be on and / or can contact the lower mold 103. The upper sides of the one or more bridges 1025 and the upper side of the upper mold 104 can contact the encapsulant 120. The thickness of the one or more bridges 1025 can be in a range of about 50 pm to about 100 pm. The lateral width of the one or more bridges 1025 can be in a range of about 100 pm to about 1500 pm. The one or more bridges 1025 can electrically couple the first electronic component 110a with the second electronic component 110b.

[0100] FIG. 7C and FIG. 7D A cross-sectional view of the electronic device 40 is shown in the middle, in a later stage of manufacturing. The first electronic component 110a and the second electronic component 110b are electrically coupled by the one or more bridges 1025. The one or more bridges 1025 can be made of a material similar to the leads 102 and the die pads 101. The one or more bridges 1025 can be in and / or can contact the upper mold 104. The one or more bridges 1025 can be on and / or can contact the lower mold 103. The one or more bridges 1025 can be in contact with the encapsulant 120. FIG. 7C and FIG. 7DIn the example shown in FIG, a groove 1027 is provided in the encapsulation 120. The groove 1027 may be partially formed through the encapsulation 120 such that the depth of the groove 1027 is less than the thickness of the encapsulation 120. For example, the encapsulation 120 may define the bottom surface of the groove 1027. In some examples, the groove 1027 may vertically overlap the plurality of bridges 1025. The groove 1027 may include or be referred to as a groove, recess, or channel defined by the encapsulation 120. The groove 1027 may be provided by a mechanical process, chemical etching, laser ablation, or any other suitable formation process. In some examples, the groove 1027 may be provided during the deposition of the encapsulation 120 (e.g., using a die or other tool that prevents the encapsulation from being deposited in the region of the groove 1027). The depth of the groove 1027 may be in the range of approximately 20 μm to approximately 980 μm. The width of the trench 1027 may range from approximately 20 μm to approximately 1480 μm. The bottom side (i.e., bottom surface) of the trench 1027 may be spaced apart from the one or more bridges 1025 and the upper side of the upper mold 104. The separation distance from the bottom side of the trench 1027 to the upper sides of the bridges 1025 and the upper side of the upper mold 104 may range from approximately 20 μm to approximately 980 μm. The separation distance between the inner sidewalls of the trench 1027 (i.e., the inner lateral sides of the encapsulation 120) and the outer lateral sides of the encapsulation 120 may range from approximately 20 μm to approximately 1480 μm. The separation distance may be substantially the same as the thickness of the encapsulation 120 at the boundaries defining the trench 1027.

[0101] FIG. 7E and FIG. 7F A cross-sectional view of an electronic device 40 is shown in a later stage of manufacturing. FIG. 7E and FIG. 7F In the example shown in FIG, the conductor 1025 is provided in the groove 1027 ( FIG. 7C and FIG. 7D ). In some examples, the conductor 1025 can fill the trench 1027. The upper side of the conductor 1025 can be coplanar with the upper side of the encapsulation 120. The upper side of the conductor 1025 can be exposed through the encapsulation 120.

[0102] Conductor 1025 may include or be referred to as a shield, internal shield, compartment shield, wall, or divider. Conductor 1025 may be made of a metal or metal alloy. In some examples, conductor 1025 may be a conductive paste. Conductor 1025 may include copper (Cu), aluminum (Al), nickel (Ni), palladium (Pd), gold (Au), silver (Ag), chromium (Cr), zinc (Zn), tin (Sn), titanium (Ti), SUS (Fe), carbon black, or alloys thereof. In some examples, a liquid conductive material may fill the trench, and heat or light may cure the conductive material to form or provide conductor 1025. Conductor 1025 may be provided in trench 1027 by sputtering, electroplating, spraying, diffusion, plasma deposition, or any other suitable deposition method. The thickness and width of conductor 1025 may be similar to the depth and width of the trench.

[0103] FIG. 7G and FIG. 7H A cross-sectional view of an electronic device 40 is shown in a later stage of manufacturing. FIG. 7G and FIG. 7H In the example shown in , shield 130 is provided over encapsulation 120 and conductor 1025 . FIG. 7G and FIG. 7H The process for forming the shield 130 shown in FIG. 1 may be similar to FIG. 2L or FIG. 4H . The shield 130 may be coupled to the conductor 1025. In addition to shielding the first and second electronic components 110a and 110b from external electrical interference, the conductor 1025 and the shield 130 may also suppress electromagnetic wave interference between the first and second electronic components 110a and 110b.

[0104] FIG. 8 A cross-sectional view of an example electronic device 40' is shown. FIG. 8 The electronic device 40' shown in FIG. FIG. 6A 、 FIG. 6B and FIG. 6C 4, except that the electronic components 110a and 110b are electrically connected to the substrate 100 using a flip chip method. In some examples, the electronic components 110a and 110b can be connected to the leads 102 through component interconnects 111a' and 111b'. The component interconnects 111a' and 111b can include bumps, pillars, solder capped pillars, etc. In some examples, the leads 102 can replace the die pad 101 ( FIG. 7B ). In some instances, FIG. 8 One or more of the leads 102 of the device 40' in FIG. 4 may include an array of isolation pads, similar to FIG. 5B The leads 102 of the device 30' are shown in FIG.

[0105] FIG. 9A A top perspective view of an example electronic device 50 is shown. FIG. 9B 、 FIG. 9C and FIG. 9D A cross-sectional view of the electronic device 50 is shown. FIG. 9B is a cross-sectional view taken along line A-A' of FIG. 9A FIG. 9C is a cross-sectional view taken along line B-B' of FIG. 9A FIG. 9D is a cross-sectional view taken along line C-C' of FIG. 9A According to various examples, the electronic device 50 can be similar to the electronic device 40 shown in FIGS. 6A-6C , where the electronic device 50 also includes the conductor support 1026, the conductor 150, and the recess 125. The conductor 150 can act as an EMI shield and can be coupled to and / or contact the shield 130. While the electronic device 50 is illustrated as having the first electronic component 110a and the second electronic component 110b coupled to the substrate 100 via component interconnects 111a and 111b including conductive wires, it is contemplated and understood that in some examples, the first electronic component 110a and / or the second electronic component 110b can be coupled to the substrate 100 in a flip-chip style, similar to the electronic device 40' in FIG. 8 .

[0106] FIGS. 10A-10I A cross-sectional view of an example method for manufacturing the example electronic device 50 is shown. FIG. 10A 、 FIG. 10D and FIG. 10G The cross-sectional views shown in FIG. 9A correspond to line A-A' in FIG. 10B 、 FIG. 10E and FIG. 10H The cross-sectional views shown in FIG. 9A correspond to line B-B' in FIG. 10C 、 FIG. 10G and FIG. 10I The cross-sectional views shown in FIG. 9A correspond to line C-C' in

[0107] FIG. 10A 、 FIG. 10B and FIG. 10C The electronic device 50 is shown at a later stage of manufacturing. For example, the electronic device 50 shown in FIG. 10A 、 FIG. 10B and FIG. 10C may be provided by a manufacturing process similar to the manufacturing process shown in FIGS. 2A-2J . In some examples, the electronic device 50 can use FIGS. 4A-4F ​​The substrate 100 of the electronic device 500 can include a conductor support 1026. The conductor 150 can be coupled to the conductor support 1026.

[0108] The conductor support 1026 and the conductor 150 can be provided laterally between the first electronic component 110a and the second electronic component 110b. In some examples, the conductor support 1026 and the conductor 150 can be intermediate the first electronic component 110a and the second electronic component 110b (i.e., approximately equal distance from the first electronic component and the second electronic component). In some examples, the conductor support 1026 and the conductor 150 can be closer to the first electronic component 110a than the second electronic component 110b. In some examples, the conductor support 1026 can be interleaved between the bridges 1025. A lower side of the conductor support 1026 can contact the lower mold 103, and lateral sides of the conductor support 1026 can contact the upper mold 104. An upper side of the conductor support 1026 can be coplanar with an upper side of the upper mold 104. The upper side of the conductor support 1026 can contact a lower side of the encapsulant 120. The material of the conductor support 1026 can be similar or identical to the material of the die pad 101 and the lead 102. The thickness of the conductor support 1026 can be similar to the thickness of the one or more bridges 1025 and the base portion 1021 of the lead 102.

[0109] The conductor 150 can be provided on the conductor support 1026. The conductor 150 can extend upwardly from the conductor support 1026. In some examples, the material and diameter of the conductor 150 can be similar to the material and diameter of the component interconnect 111. In some examples, the conductor 150 can comprise or be referred to as a conductive wire, a metal pillar, a stacked bump, or a copper pillar. In some examples, the conductor 150 can extend in a straight line upwardly on the conductor support 1026. In some examples, a lower end of the conductive wire can be ball-bonded to the conductive support 1026, and an upper end of the conductive wire can be spaced apart from an upper side of the encapsulant 120. The length of the conductor 150 can be in a range of about 100 pm to about 1500 pm.

[0110] FIG. 10D 、 FIG. 10E and FIG. 10F A cross-sectional view of the electronic device 50 is shown at a later stage of manufacturing. In this example, the substrate 100 can include a conductor support 1026. The conductor support 1026 can be provided laterally between the first electronic component 110a and the second electronic component 110b. In some examples, the conductor support 1026 can be intermediate the first electronic component 110a and the second electronic component 110b (i.e., approximately equal distance from the first electronic component and the second electronic component). In some examples, the conductor support 1026 can be closer to the first electronic component 110a than the second electronic component 110b. In some examples, the conductor support 1026 can be interleaved between the bridges 1025. A lower side of the conductor support 1026 can contact the lower mold 103, and lateral sides of the conductor support 1026 can contact the upper mold 104. An upper side of the conductor support 1026 can be coplanar with an upper side of the upper mold 104. The upper side of the conductor support 1026 can contact a lower side of the encapsulant 120. The material of the conductor support 1026 can be similar or identical to the material of the die pad 101 and the lead 102. The thickness of the conductor support 1026 can be similar to the thickness of the one or more bridges 1025 and the base portion 1021 of the lead 102. FIG. 10D 、 FIG. 10E and FIG. 10FIn the example shown in FIG, a groove 125 is provided in the encapsulation 120. The groove 125 vertically overlaps the conductor 150. In some examples, the groove 125 can be provided to span the plurality of bridges 1025 and the plurality of conductor supports 1026 as well as the conductor 150. The groove 125 can be formed to a depth suitable for exposing the upper end of the conductor 150. The depth of the groove 125 can be in the range of about 20 μm to about 980 μm. The process for forming the groove 125 can be the same as described above with reference to FIG. FIG. 7C and FIG. 7D The process described for forming trench 1027 is similar or identical.

[0111] FIG. 10G 、 FIG. 10H and FIG. 10I A cross-sectional view of an electronic device 50 is shown in a later stage of manufacturing. FIG. 10G 、 FIG. 10H and FIG. 10I In the example shown in FIG. 1 , a shield 130 may be provided. The shield 130 may be provided over the top and lateral sides of the encapsulation 120. The shield 130 may be provided over the recess 125 ( FIG. 10D 、 FIG. 10E and FIG. 10F )middle. FIG. 10G 、 FIG. 10H and FIG. 10I The process for forming the shield 130 shown in FIG. 1 may be similar to FIG. 2L 、 FIG. 4H or FIG. 7C and FIG. 7D Shield 130 may be coupled to conductor 150. For example, shield 130 may be coupled to and / or contact the top end of conductor 150 exposed along the bottom surface of groove 125. Conductor 150 and shield 130 tend to shield electromagnetic waves to suppress EMI. In addition to shielding first electronic component 110a and second electronic component 110b from external electrical interference, conductor 150 and shield 130 may also suppress electromagnetic wave interference between first electronic component 110a and second electronic component 110b.

[0112] FIG. 11A A top perspective view of an example electronic device 60 is shown. FIG. 11B and FIG. 11C A cross-sectional view of an example electronic device 60 is shown. FIG. 11B Instructions along the FIG. 11A A cross-sectional view taken along line AA'. FIG. 11C Instructions along the FIG. 11A A cross-sectional view taken along line BB'.

[0113] According to various examples, the electronic device 60 may be similar to FIGS. 9A-9Delectronic device 50 shown in FIG. 1, where one or more conductors 160 extend between the conductor supports 1026. While the electronic device 60 is illustrated as having first and second electronic components 110a and 110b coupled to the substrate 100 via assembly interconnects 111a and 111b that include conductive wires, it is contemplated and understood that, in some examples, the first and / or second electronic components 110a and 110b can be coupled to the substrate 100 in a flip-chip style, similar to FIG. 8 the electronic device 40' in FIG. 1.

[0114] In some examples, the conductors 160 are provided in a curved shape, an angled shape, a bent shape, an inverted "U" shape, or an inverted "V" shape. In some examples, one end or portion of the conductors 160 can be joined to a first conductor support 1026, and an opposite end or portion of the conductors 160 can be joined to a second conductor support 1026. In some examples, the conductors 160 can traverse the bridges 1025. For example, the conductors 160 can extend over or vertically overlap the bridges 1025. In some examples, the conductors 160 can include or be referred to as wire grids, conductive wires, or wire loops. The conductor supports 1026 can be electrically coupled or shorted by the plurality of conductors 160. In some examples, the conductors 160 can include one integral or unitary piece that extends between and is joined to the plurality of conductor supports 1026. In other examples, the conductors 160 can be a plurality of discrete structures, where each conductor extends between, for example, two conductor supports 160, and where two conductors 160 are coupled to the same conductor support.

[0115] In some examples, the ends of the one or more conductors 160 can be located at the outer edge or perimeter of the encapsulant 120, and can be coupled to and / or contact the shield 130. For example, one end of the conductors 160 can be exposed from the encapsulant 120. In some examples, the one or more conductor supports 1026 can extend to the outer edge or perimeter of the encapsulant 120, and can be coupled to and / or contact the shield 130. In some examples, the conductors 160, the conductor supports 1026, and the shield 130 can all be electrically coupled. The electronic device 60 can also be referred to as a "wire grid" type electronic device. The one or more conductors 160 and the shield 130 tend to shield electromagnetic waves to suppress EMI. In addition to shielding the first and second electronic components 110a and 110b from external electrical interference, the one or more conductors 160 and the shield 130 can also suppress electromagnetic wave interference between the first and second electronic components 110a and 110b.

[0116] FIG. 12A A top perspective view of an example electronic device 70 is shown. FIG. 12B A top perspective view of an example electronic device 70 is shown. FIG. 12AFIG. 1 1 is a cross-sectional view of the electronic device 70 taken along the line A-A' of FIG. 10. In FIG. 12A and FIG. 12B the examples shown in FIG. 11A and FIG. 11B , the electronic device 70 can be similar to the electronic device 60, with the conductor 170 extending over and vertically overlapping the second electronic component 1 10b. While the electronic device 70 is illustrated as having the first electronic component 1 10a and the second electronic component 1 10b coupled to the substrate 100 via component interconnects 1 1 1 a and 1 1 1 b including conductive wires, it is contemplated and understood that in some examples, the first electronic component 1 10a and / or the second electronic component 1 10b can be coupled to the substrate 100 in a flip-chip style, similar to the electronic device 40' in FIG. 8 .

[0117] According to various examples, conductor supports 1026 can be provided between the bridges 1025 and also between the leads 102. The conductor supports 1026 can be disposed generally around the second electronic component 1 10b. The conductor supports 1026 can be spaced apart from and surround the second electronic component 1 10b. The conductor supports 1026 can be disposed around the second electronic component 1 10b in a substantially square or rectangular perimeter. Lateral sides of some of the conductor supports 1026 can be coplanar with lateral sides of the encapsulant 120 and / or with lateral sides of the upper mold 104. Lateral sides of one or more of the conductor supports 1026 can be coupled to and / or contact the shield 130.

[0118] The conductors 170 can be connected to the conductor supports 1026 in a curved shape, an angled shape, a bent shape, an inverted "U" shape, or an inverted "V" shape. In some examples, the conductors 170 can comprise or be referred to as wire cages, conductive wires, or wire loops. The conductors 170 can generally surround the upper sides and lateral sides of the second electronic component 110b. The conductors 170 can be connected to two conductor supports 1026, for example, a first conductor support 1026 located at a first side of the second electronic component 110b and a second conductor support 1026 located at a second side of the second electronic component 110b. The conductors 170 can be connected to the opposite conductor supports 1026 along or parallel to a line connecting opposite corners. The lengths of the conductors 170 can be different. The lengths of the conductors 170 near the center of the die pads 101 or the second electronic component 110b can be relatively long, and the lengths of the conductors 170 farthest from the die pads 101 or the second electronic component 110b can be relatively short. In some examples, the conductors 170 can be provided in a direction that crosses or is generally perpendicular to the ground leads 1024. In some examples, the conductors 170 can be provided in a direction that is generally parallel to the ground leads 1024. The heights of the conductors 170 can be greater than the heights of the component interconnects 111. The conductors 170 can be spaced apart from the component interconnects 111. The materials and diameters of the conductors 170 can be similar to the materials and diameters of the component interconnects 111. In some examples, the electronic device 70 can also be referred to as a "wire cage" type electronic device. The conductors 170 and the shield 130 tend to shield electromagnetic waves to suppress EMI. In addition to shielding the first electronic component 110a and the second electronic component 110b from external electrical interference, the conductors 170 and the shield 130 can also suppress electromagnetic wave interference between the first electronic component 110a and the second electronic component 110b.

[0119] The electronic devices of the present disclosure can provide wettable side surfaces without Cu exposure. The upper and lower molding techniques tend to result in improved device reliability and avoid introducing metal burrs into the electronic devices. Various EMI shielding techniques can be integrated with the wettable side surfaces to enable high design flexibility in RF devices and other devices. The rtMLF true isolation pads can yield high performance devices with high input / output counts.

[0120] The present disclosure includes references to certain examples, however, those skilled in the art will understand that various modifications can be made and equivalents substituted without departing from the scope of the present disclosure. Additionally, modifications can be made to the disclosed examples without departing from the scope of the present disclosure. Therefore, it is intended that the present disclosure not be limited to the disclosed examples, but rather the present disclosure will include all examples falling within the scope of the appended claims.

Claims

1. An electronic device, characterized by comprising: includes: leads including a conductive material, wherein a lead of the leads includes a base portion and a protrusion extending from a lower side of the base portion; a die pad between the leads and including the conductive material; a lower mold on a first lateral side of the protrusion and around lateral sides of the die pad; a lower surface coating applied to a lower side of the protrusion; and an electronic component coupled to the die pad and in electrical communication with the leads. further including an upper mold disposed above the lower mold and around lateral sides of the base portions and the die pad. 2.The electronic device of claim 1, wherein, the leads are separated from the die pad by the upper mold and the lower mold. 3.The electronic device of claim 2, wherein, further including an encapsulant disposed above the electronic component, above the lower mold, and around the lateral sides of the base portions and the lateral sides of the die pad. 4.The electronic device of claim 1, wherein, the lower surface coating is applied to a lower side of the base portion, a second lateral side of the protrusion opposite the first lateral side of the protrusion, and the lower side of the protrusion to form wettable side faces. 5.The electronic device of claim 1, wherein, further including a shield disposed above the electronic component and around lateral sides of the base portions of the leads. 6.The electronic device of claim 1, wherein, further including a ground lead integrally formed with the die pad and electrically coupled to the shield. 7.The electronic device of claim 6, wherein, further including: 8.The electronic device of claim 6, wherein, a second electronic component lateral to the first electronic component; a bridge including the conductive material, wherein the die pad is between the leads and the bridge; and an electromagnetic interference (EMI) shield disposed above the bridge and between the first electronic component and the second electronic component, wherein the EMI shield is electrically coupled to the shield. the EMI shield includes a wire grid, a conductive paste, or a vertical wire. further including a wire cage extending around lateral sides of the electronic component and electrically connected to the shield. 9.The electronic device of claim 8, wherein, the leads are enclosed by the lower surface coating, the lower mold, an upper mold disposed around lateral sides of the base portions, and an upper surface coating applied to an upper side of the leads. 10.The electronic device of claim 6, wherein, the lower surface coating includes a silver plating layer. 11.The electronic device of claim 1, wherein, the lower mold is on a second lateral side of the protrusion opposite the first lateral side. 12.The electronic device of claim 1, wherein, includes: 13.The electronic device of claim 1, wherein, providing leads including a conductive material, wherein a lead of the leads includes a base portion and a protrusion extending from a lower side of the base portion; 14. A method of manufacturing an electronic device, characterized by, providing a die pad including the conductive material and disposed between the leads; providing a lower mold on a first lateral side of the protrusion and around lateral sides of the die pad; applying a lower surface coating to a lower side of the protrusion; and providing an electronic component coupled to the die pad and in electrical communication with the leads. further including providing an upper mold above the lower mold and around lateral sides of the base portions and the die pad. ​ ​ 15. The method of claim 14, wherein, ​ 16. The method of claim 14, wherein, further comprising providing an encapsulant over the electronic component, over the lower mold, and around lateral sides of the base portion and the lateral sides of the die pad.

17. The method of claim 14, wherein, the lower surface coating is applied to a lower side of the base portion, a second lateral side of the protrusion opposite the first lateral side of the protrusion, and the lower side of the protrusion to form wettable side surfaces.

18. The method of claim 14, wherein, the lead is separated from the die pad by an upper mold and the lower mold.

19. The method of claim 14, wherein, the lead is enclosed by the lower surface coating, the lower mold, an upper mold disposed around lateral sides of the base portion, and an upper surface coating applied to an upper side of the lead.

20. An electronic device, comprising: comprising: a lead comprising an electrically conductive material and including a base portion and a protrusion extending from a lower side of the base portion; a die pad adjacent to the lead and comprising the electrically conductive material; a lower mold on a first lateral side of the protrusion and around lateral sides of the die pad, wherein the lower mold is between the lead and the die pad; a surface coating applied to a lower side of the protrusion to form wettable side surfaces; and an electronic component coupled to the die pad and in electrical communication with the lead.

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