Light emitting diode and manufacturing method of light emitting diode
By introducing a stepped structure and a current blocking layer into the light-emitting diode, the problem of insufficient light-emitting area is solved, resulting in a larger light-emitting area and a more uniform brightness effect.
Patent Information
- Application Number
- CN202510719333.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-05-30
- Publication Date
- 2025-10-24
AI Technical Summary
The light-emitting area of existing LEDs is not large enough, resulting in insufficient and uneven brightness.
A stepped structure is introduced into the light-emitting diode, and a first part of a current blocking layer is provided on the top edge and sidewall of the step. A current spreading layer covers the first part and the middle part of the top edge and sidewall of the step. The layer is connected to the epitaxial structure through the gap between the first part and the second part to avoid the current spreading layer from contacting the sidewall of the step.
The light-emitting area of the LED has been increased, resulting in greater and more uniform brightness. The distance between the current spreading layer and the contact part and edge of the step top surface is smaller, resulting in a larger light-emitting area.
Smart Images
Figure CN120835642A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present disclosure relates to the field of light emitting devices, and in particular, to a light emitting diode and a method for manufacturing the light emitting diode. BACKGROUND
[0002] A light emitting diode is a semiconductor device with small size and light emitting function, and is widely used in display, lighting and other fields.
[0003] The related art provides a light emitting diode, which comprises a first semiconductor layer, an active layer and a second semiconductor layer, a current blocking layer, a current spreading layer, a first electrode and a second electrode.
[0004] However, the light emitting area of the light emitting diode provided by the related art is not large enough. SUMMARY
[0005] The present disclosure provides a light emitting diode and a method for manufacturing the light emitting diode, which can increase the light emitting area of the light emitting diode. The technical solutions are as follows.
[0006] In one aspect, a light emitting diode is provided, which comprises an epitaxial structure, a current blocking layer, a current spreading layer, a first electrode and a second electrode.
[0007] The epitaxial structure comprises a step structure, and the step structure comprises a step bottom surface, a step top surface and a step sidewall connecting the step bottom surface and the step top surface.
[0008] The current blocking layer comprises a first part covering an edge of the step top surface and a step sidewall, and a second part located in a middle part of the step top surface.
[0009] The current spreading layer covers the first part and the second part, and is connected with the epitaxial structure through a gap between the first part and the second part.
[0010] The first electrode is connected with the step bottom surface, and the second electrode is connected with the current spreading layer.
[0011] Optionally, the distance between the edge of the current spreading layer and the outer edge of the first part is 1-4 μm.
[0012] Optionally, the width of the first part is 2-5 μm.
[0013] Optionally, the thickness of the part of the first part located above the step top surface is equal to the thickness of the second part.
[0014] Optionally, the thickness of the second part is 0.01-100 μm.
[0015] Optionally, the second portion comprises a main body portion, an annular portion surrounding the main body portion, and an extension portion connected to the annular portion, and the current spreading layer is further connected to the epitaxial structure through a gap between the main body portion and the annular portion.
[0016] The current spreading layer has a through hole on the main body portion, and the second electrode is in contact with the main body portion through the through hole.
[0017] In another aspect, a method for manufacturing a light emitting diode is provided, the method comprising
[0018] manufacturing an epitaxial structure, the epitaxial structure comprising a step structure, the step structure comprising a step bottom surface, a step top surface, and a step sidewall connecting the step bottom surface and the step top surface;
[0019] manufacturing a current blocking layer, the current blocking layer comprising a first portion covering edges of the step top surface and the step sidewall, and a second portion located in a middle portion of the step top surface;
[0020] manufacturing a current spreading layer, the current spreading layer covering the first portion and the second portion, and being connected to the epitaxial structure through a gap between the first portion and the second portion;
[0021] manufacturing a first electrode and a second electrode, the first electrode being connected to the step bottom surface, and the second electrode being connected to the current spreading layer.
[0022] Optionally, a distance between an edge of the current spreading layer and an outer edge of the first portion is 1-4 μm.
[0023] Optionally, a width of the first portion is 2-5 μm.
[0024] Optionally, the second portion comprises a main body portion, an annular portion surrounding the main body portion, and an extension portion connected to the annular portion, and the current spreading layer is further connected to the epitaxial structure through a gap between the main body portion and the annular portion.
[0025] The current spreading layer has a through hole on the main body portion, and the second electrode is in contact with the main body portion through the through hole.
[0026] The technical scheme provided by the embodiments of the present disclosure has the following beneficial effects:
[0027] In the embodiments of the present disclosure, the current blocking layer includes a first part arranged on the edge of the step top surface and the step sidewall in addition to the second part arranged in the middle of the step top surface. The first part avoids the current spreading layer from contacting the step sidewall, so that the current spreading layer can be arranged in a larger area, the distance between the current spreading layer and the edge of the step top surface is smaller, the light emitting area of the light emitting diode is increased, the light emitting area is larger, and the brightness is more uniform. BRIEF DESCRIPTION OF DRAWINGS
[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings needed in the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present disclosure, and other drawings can be obtained by those skilled in the art without creative effort based on these drawings.
[0029] Figure 1 is a cross-sectional view of a light emitting diode provided by the embodiments of the present disclosure;
[0030] Figure 2 is a top view of a light emitting diode provided by the embodiments of the present disclosure;
[0031] Figure 3 is a flow chart of a manufacturing method of a light emitting diode provided by the embodiments of the present disclosure;
[0032] Figure 4 is a flow chart of another manufacturing method of a light emitting diode provided by the embodiments of the present disclosure;
[0033] Figure 5 is a comparison diagram of test results of a light emitting diode and a related technology light emitting diode provided by the embodiments of the present disclosure.
[0034] The signs are as follows:
[0035] 100: substrate; 101: first semiconductor layer; 102: active layer; 103: second semiconductor layer; 10: epitaxial structure; 20: current blocking layer; 30: current spreading layer; 40: first electrode; 50: second electrode; 60: passivation layer; 201: first part; 202: second part; 2021: main body part; 2022: annular part; 2023: extension part; 301: through hole. DETAILED DESCRIPTION
[0036] In order to make the objects, technical solutions and advantages of the present disclosure clearer, the embodiments of the present disclosure will be further described in detail below with reference to the drawings.
[0037] In the related art, the current blocking layer is arranged in the middle of the top surface of the epitaxial step, and the current spreading layer covers the current blocking layer. In the manufacturing process, in order to avoid the contact between the current spreading layer and the step sidewall or even the step bottom surface, the over-etching method is used for patterning, and finally the edge of the current spreading layer has a certain distance from the edge of the step top surface, for example, up to 6.33 μm in the related art, which causes the light emitting area to be small.
[0038] Figure 1 A cross-sectional view of a light emitting diode is provided for the embodiments of the present disclosure. Referring to Figure 1 , the light emitting diode comprises an epitaxial structure 10, a current blocking layer 20, a current spreading layer 30, a first electrode 40 and a second electrode 50.
[0039] Figure 2 A top view (partial film layer) of a light emitting diode is provided for the embodiments of the present disclosure. Figure 1 For Figure 2 , the cross-sectional view at the dashed line A1-A2.
[0040] Referring to Figure 1 and Figure 2 , the epitaxial structure 10 comprises a step structure, the step structure comprises a step bottom surface, a step top surface and a step sidewall connecting the step bottom surface and the step top surface.
[0041] The current blocking layer 20 comprises a first part 201 covering the edge of the step top surface and the step sidewall, and a second part 202 located in the middle of the step top surface.
[0042] The current spreading layer 30 covers the first part 201 and the second part 202, and is connected with the epitaxial structure 10 through the gap between the first part 201 and the second part 202.
[0043] The first electrode 40 is connected with the step bottom surface, and the second electrode 50 is connected with the current spreading layer 30.
[0044] In the embodiments of the present disclosure, in addition to the second part arranged in the middle of the step top surface, the current blocking layer also comprises the first part arranged to cover the edge of the step top surface and the step sidewall. Due to the existence of the first part, the contact between the current spreading layer and the step sidewall is avoided, so that the current spreading layer can be arranged with a larger area, the distance between the contact part of the current spreading layer and the step top surface and the edge of the step top surface is smaller, the light emitting area of the light emitting diode is increased, the light emitting area is larger, the brightness is larger and more uniform.
[0045] In the embodiments of the present disclosure, the distance a between the edge of the current spreading layer 30 and the outer edge of the first part 201 is 1-4 μm.
[0046] The distance a here can refer to the distance between the edge of the current spreading layer 30 and the projection of the outer edge of the first part 201 on the bottom surface of the epitaxial structure 10.
[0047] In this implementation, since the current spreading layer no longer needs to be patterned by over-etching, the distance between the edge of the current spreading layer and the edge of the step top surface is smaller, much smaller than 6.33 μm in the related art, thereby increasing the light emitting area.
[0048] In the embodiments of the present disclosure, the width b of the first part 201 is 2-5 μm.
[0049] The width b here can refer to the width of the projection of the first part 201 on the bottom surface of the epitaxial structure 10.
[0050] The first part is an annular structure arranged around the edge of the step top surface of the step structure, and the width of the annular structure is 2-5 μm. The distance between the edge of the current spreading layer 30 and the outer edge of the first part 201 is 1-4 μm. Then, the distance between the current spreading layer 30 and the edge of the step top surface is 1-4 μm, for example, 3.42 μm.
[0051] In this implementation, the first part is arranged with the above width. On the one hand, the current spreading layer can be arranged to have a larger area after the edge current blocking layer with the above width and without contacting the step sidewall and the step bottom surface. In addition, the above width does not affect the contact area between the current spreading layer and the epitaxial structure, thereby ensuring the current spreading effect.
[0052] For example, the width of the first part 201 is 4 μm.
[0053] In one example of the embodiments of the present disclosure, the thickness of the part of the first part 201 above the step top surface is equal to the thickness of the second part 202.
[0054] In this implementation, the first part 201 and the second part 202 are fabricated in the same layer, thereby simplifying the fabrication process.
[0055] In the embodiments of the present disclosure, the thickness of the second part 202 is 0.01-100 μm. Correspondingly, the thickness of the part of the first part 201 above the step top surface is also 0.01-100 μm.
[0056] In this implementation, the current blocking layer with the above thickness can achieve a balance between the current blocking effect and the miniaturization of the overall chip size.
[0057] For example, the thickness of the second portion 202 is 0.2-1 μm. Correspondingly, the thickness of the portion of the first portion 201 located above the top surface of the step is also 0.2-1 μm.
[0058] In other examples of the embodiment of the present disclosure, the thickness of the portion of the first portion 201 located above the top surface of the step is not equal to the thickness of the second portion 202 .
[0059] In this implementation, the first part 201 and the second part 202 can be manufactured in two steps.
[0060] like Figure 2 As shown, in the embodiment of the present disclosure, the second part 202 includes a main body portion 2021, an annular portion 2022 surrounding the main body portion 2021, and an extension portion 2023 connected to the annular portion 2022, and the current spreading layer 30 is also connected to the epitaxial structure 10 through the gap between the main body portion 2021 and the annular portion 2022.
[0061] The current spreading layer 30 has a through hole 301 . The through hole 301 is located on the main body 2021 . The second electrode 50 contacts the main body 2021 through the through hole 301 .
[0062] In the embodiment of the present disclosure, the second portion and the current spreading layer adopt the above-mentioned design, so that the current spreading layer contacts the epitaxy through multiple gaps and spaces, thereby ensuring the current spreading effect.
[0063] like Figure 2 As shown, the bottom surface of the step includes a notch opened on one side of the epitaxial structure and a circle arranged around the edge of the epitaxial structure, and the first electrode 40 is arranged in the notch.
[0064] like Figure 1 As shown, the epitaxial structure 10 includes a first semiconductor layer 101, an active layer 102 and a second semiconductor layer 103. The first semiconductor layer 101, the active layer 102 and the second semiconductor layer 103 are stacked in sequence, with the bottom surface of the step located in the first semiconductor layer 101 and the top surface of the step located in the second semiconductor layer 103.
[0065] like Figure 1 As shown, the light emitting diode further includes a substrate 100 , and the first semiconductor layer 101 , the active layer 102 and the second semiconductor layer 103 are sequentially stacked on the surface of the substrate 100 .
[0066] like Figure 1 As shown, the light emitting diode further includes a passivation layer 60 , which covers the current spreading layer, the first electrode and the second electrode, and exposes the first electrode and the second electrode.
[0067] In the embodiments of the present disclosure, the substrate 100 can be any one of a sapphire substrate, a Si substrate, a SiC substrate, and the like, and the embodiments of the present disclosure do not limit the substrate 100.
[0068] For example, the substrate 100 is a sapphire substrate.
[0069] The thickness of the substrate 100 can be 3-200 μm, for example, 200 μm.
[0070] In the embodiments of the present disclosure, the first semiconductor layer 101 can be an N-type semiconductor layer, the active layer 102 can be a multi-quantum well layer, and the second semiconductor layer 103 can be a P-type semiconductor layer.
[0071] For example, the first semiconductor layer 101 is an N-type GaN layer, the active layer is an InGaN / GaN layer, and the second semiconductor layer 103 is a P-type GaN layer.
[0072] In other examples, the first semiconductor layer 101 is a P-type semiconductor layer, the active layer 102 is a multi-quantum well layer, and the second semiconductor layer 103 is an N-type semiconductor layer.
[0073] In the embodiments of the present disclosure, the current blocking layer 20 can be a SiO x layer, and x is greater than 0, for example, the current blocking layer 20 is a SiO2 layer.
[0074] The thickness of the current blocking layer 20 can be 0.01-6 μm, for example, 2 μm.
[0075] In the embodiments of the present disclosure, the current spreading layer 30 can be an Indium Tin Oxides (ITO) layer.
[0076] The thickness of the current spreading layer 30 can be 0.01-100 μm, for example, 10 μm.
[0077] In the embodiments of the present disclosure, the passivation layer 60 can be one of SiO2 and Si3N4 or a combination of the two.
[0078] The thickness of the passivation layer 60 can be 0.01-1000 μm, for example, 100 μm.
[0079] In the embodiments of the present disclosure, the first electrode 40 and the second electrode 50 can be one or more of Cr, Al, Ti, Ni, Pt, and Au in a stack.
[0080] For example, the first electrode 40 and the second electrode 50 are Cr / Al / Ti / Ni / Pt / Au stack electrodes.
[0081] The thicknesses of the sub-layers in Cr / Al / Ti / Ni / Pt / Au can be, in order:
[0082] 30nm / 1000nm / 40nm / 1000nm / 1000nm / 10000nm.
[0083] Of course, the above film layer structure is only an example, and in other embodiments, the light emitting diode can include more or fewer film layers. Also, the materials of the above film layers are only examples, and the light emitting diode can optionally be provided with materials for each film layer, and the embodiments of the present disclosure do not limit this.
[0084] Figure 3 A flowchart of a method for manufacturing a light emitting diode is provided in an embodiment of the present disclosure. Referring to Figure 3 The method steps include:
[0085] S21, manufacturing an epitaxial structure, the epitaxial structure including a step structure, the step structure including a step bottom surface, a step top surface, and a step sidewall connecting the step bottom surface and the step top surface.
[0086] S22, manufacturing a current blocking layer, the current blocking layer including a first part covering an edge of the step top surface and the step sidewall, and a second part located in a middle of the step top surface.
[0087] S23, manufacturing a current spreading layer, the current spreading layer covering the first part and the second part, and connected to the epitaxial structure through a gap between the first part and the second part.
[0088] S24, manufacturing a first electrode and a second electrode, the first electrode connected to the step bottom surface, and the second electrode connected to the current spreading layer.
[0089] In an embodiment of the present disclosure, the current blocking layer includes a first part covering an edge of the step top surface and the step sidewall in addition to the second part located in the middle of the step top surface. Due to the presence of the first part, the current spreading layer is prevented from contacting the step sidewall, so that the current spreading layer can be provided with a larger area, the distance between the current spreading layer and the edge of the step top surface is smaller, the light emitting area of the light emitting diode is increased, the light emitting area is larger, and the brightness is more uniform.
[0090] Figure 4 A flowchart of another method for manufacturing a light emitting diode is provided in an embodiment of the present disclosure. Referring to Figure 4 The method steps include:
[0091] S31, manufacturing a first semiconductor layer, an active layer, and a second semiconductor layer stacked in order on a substrate.
[0092] In the embodiments of the present disclosure, the substrate can be any one of a sapphire substrate, a Si substrate, a SiC substrate, and the like, and the embodiments of the present disclosure do not limit the substrate.
[0093] For example, the substrate is a sapphire substrate.
[0094] The thickness of the substrate can be 3-200 μm, for example, 200 μm.
[0095] In an example, the step S31 comprises:
[0096] First, a first semiconductor layer is grown.
[0097] The first semiconductor layer is an N-type GaN layer.
[0098] The N-type GaN layer is grown on the surface of the substrate by using a metal organic chemical vapor deposition (MOCVD) device.
[0099] In the embodiments of the present disclosure, the growth of the semiconductor layer can be realized by using a Veeco K465i or C4 or RB MOCVD device or an AIXTRON metal organic chemical vapor deposition device. High-purity H2 (hydrogen) or high-purity N2 (nitrogen) or a mixed gas of high-purity H2 and high-purity N2 is used as a carrier gas, high-purity NH3 is used as an N source, trimethyl gallium (TMGa) and triethyl gallium (TEGa) are used as a gallium source, trimethyl indium (TMIn) is used as an indium source, silane (SiH4) is used as an N-type dopant, trimethyl aluminum (TMAl) is used as an aluminum source, and dimethyl magnesium (CP2Mg) is used as a P-type dopant.
[0100] Second, an active layer is grown.
[0101] For example, the InGaN / GaN layer is grown on the surface of the N-type GaN layer by using a MOCVD device.
[0102] Third, a second semiconductor layer is grown.
[0103] For example, the P-type GaN layer is grown on the surface of the InGaN / GaN layer by using a MOCVD device.
[0104] S32, the first semiconductor layer, the active layer, and the second semiconductor layer are subjected to a patterning process to form a step structure.
[0105] In an example, the step S32 comprises:
[0106] The first semiconductor layer and the active layer are patterned by etching to form a step structure, and a step surface of the step structure is located in the first semiconductor layer.
[0107] The etching technology can be inductively coupled plasma (ICP) etching technology.
[0108] In the embodiment of the present disclosure, the step structure includes a step bottom surface, a step top surface, and a step sidewall connecting the step bottom surface and the step top surface.
[0109] In the embodiment of the present disclosure, the step bottom surface includes a notch formed on one side of the epitaxial structure and a ring arranged around the epitaxial edge.
[0110] S33, a current blocking layer is made on the surface of the second semiconductor layer.
[0111] The current blocking layer includes a first part covering the edge of the step top surface and the step sidewall, and a second part located in the middle of the step top surface.
[0112] In the embodiment of the present disclosure, the width of the first part 201 is 2-5 μm.
[0113] The first part is a ring structure arranged around the edge of the step top surface of the step structure, and the width of the ring structure is 2-5 μm. The distance between the edge of the current spreading layer 30 and the outer edge of the first part 201 is 1-4 μm. The distance between the current spreading layer 30 and the step top surface edge is 1-4 μm, for example, 3.42 μm.
[0114] In this implementation, the first part is set to have the above width, which can make the current spreading layer have a larger area after the edge current blocking layer with the above width, and can prevent the current spreading layer from contacting the step sidewall and the step bottom surface. The above width also does not affect the contact area of the current spreading layer and the epitaxial structure, and ensures the current spreading effect.
[0115] For example, the first part is a ring structure arranged around the edge of the step top surface of the step structure, and the ring structure is 50 nm.
[0116] In an example of the embodiment of the present disclosure, the thickness of the part of the first part 201 above the step top surface is equal to the thickness of the second part 202.
[0117] In this implementation, the first part 201 and the second part 202 are made in the same layer, thereby simplifying the manufacturing process.
[0118] In the embodiment of the present disclosure, the thickness of the second portion 202 is 0.01-100 μm. Correspondingly, the thickness of the portion of the first portion 201 located above the top surface of the step is also 0.01-100 μm.
[0119] In this implementation, the current blocking layer having the above-mentioned thickness is used to achieve a balance between the current blocking effect and the miniaturization of the overall chip size.
[0120] For example, the thickness of the second portion 202 is 0.2-1 μm. Correspondingly, the thickness of the portion of the first portion 201 located above the top surface of the step is also 0.2-1 μm.
[0121] In other examples of the embodiment of the present disclosure, the thickness of the portion of the first portion 201 located above the top surface of the step is not equal to the thickness of the second portion 202 .
[0122] In this implementation, the first part 201 and the second part 202 can be manufactured in two steps.
[0123] like Figure 2 As shown, in the embodiment of the present disclosure, the second part 202 includes a main body portion 2021, an annular portion 2022 surrounding the main body portion 2021, and an extension portion 2023 connected to the annular portion 2022, and the current spreading layer 30 is also connected to the epitaxial structure 10 through the gap between the main body portion 2021 and the annular portion 2022.
[0124] The extension portion 2023 is in a herringbone shape or a T-shape, and the herringbone shape or the T-shape surrounds the gap at the bottom surface of the step.
[0125] In one example, step S33 includes:
[0126] SiO was deposited using electron beam evaporation equipment. x Thin film, x is greater than 0; for SiO x The film is patterned to obtain the current blocking layer.
[0127] The growth temperature during evaporation is 100°C to 500°C.
[0128] Exemplarily, the current blocking layer is a SiO2 layer.
[0129] S34, forming a current spreading layer on the surfaces of the current blocking layer and the second semiconductor layer.
[0130] The current spreading layer covers the first portion and the second portion, and is connected to the epitaxial structure through a gap between the first portion and the second portion.
[0131] As Figure 2 shown in the embodiments of the present disclosure, the current spreading layer 30 has a through hole 301 located on the main body part 2021, and the second electrode 50 contacts the main body part 2021 through the through hole 301.
[0132] In the embodiments of the present disclosure, the second part and the current spreading layer adopt the above design, so that the current spreading layer contacts the epitaxial layer through the plurality of gaps and gaps, and the current spreading effect can be ensured.
[0133] In the embodiments of the present disclosure, the distance between the edge of the current spreading layer 30 and the outer edge of the first part 201 is 1-4 μm.
[0134] In this implementation, since the current spreading layer does not need to use over-etching patterning again, the distance between the edge of the current spreading layer and the edge of the step top surface is smaller, much smaller than 6.33 μm in the related art, and the light emitting area is increased.
[0135] In one example, step S34 includes:
[0136] The electron beam evaporation device is used to evaporate the current spreading film, and the current spreading film is subjected to patterning treatment to obtain the current spreading layer.
[0137] In the embodiments of the present disclosure, the current spreading layer is an indium tin oxide (ITO) layer.
[0138] The thickness of the current spreading layer can be 0.01-100 μm, for example, 10 μm.
[0139] S35, manufacturing a first electrode and a second electrode.
[0140] The first electrode is connected with the first semiconductor layer, and the second electrode is connected with the current spreading layer.
[0141] The shape of the second electrode corresponds to the shape of the second part of the current blocking layer, and includes the electrode and the extension part connected with each other. That is, the extension part of the second electrode is in the shape of a chevron or a T, and the chevron or T shape surrounds the gap in which the step bottom surface is located.
[0142] As Figure 2 shown, the width of the second electrode is smaller than the width of the current blocking layer.
[0143] In one example, step S35 includes:
[0144] The first electrode is manufactured on the step surface of the step structure by using a magnetron sputtering technology or an electron beam evaporation technology, and the second electrode is manufactured on the surface of the current spreading layer.
[0145] The temperature for manufacturing the above-mentioned electrode may be 100° C. to 400° C., and an annealing treatment is performed after the electrode is manufactured.
[0146] In the embodiment of the present disclosure, the first electrode and the second electrode may be a stack of one or more of Cr, Al, Ti, Ni, Pt, and Au.
[0147] Exemplarily, the first electrode and the second electrode are Cr / Al / Ti / Ni / Pt / Au stacked electrodes.
[0148] The thickness of each sub-layer in Cr / Al / Ti / Ni / Pt / Au can be:
[0149] 30nm / 1000nm / 40nm / 1000nm / 1000nm / 10000nm.
[0150] S36, making a passivation layer.
[0151] The passivation layer covers the current spreading layer, the first electrode and the second electrode.
[0152] In one example, step S36 includes:
[0153] A passivation layer film is manufactured by using a plasma enhanced chemical vapor deposition (PECVD) technique or an atomic layer deposition (ALD) technique; and the passivation layer film is patterned to form through holes corresponding to the first electrode and the second electrode respectively.
[0154] Exemplarily, the passivation layer film is etched using an etching technique to form through holes corresponding to the first electrode and the second electrode, respectively.
[0155] In the embodiment of the present disclosure, the passivation layer may be made of SiO2, Si3N4, or a combination of the two.
[0156] The thickness of the passivation layer may be 0.01-1000 μm, for example, 100 μm.
[0157] Optionally, the method may further include grinding, polishing, and cutting the LED wafer to obtain the LED chips.
[0158] The following Table 1 and Table 2 are test results of the light emitting diode and the light emitting diode of the related art provided by the embodiment of the present disclosure. Table 1 is COT data, which is data tested by a test machine of a LED factory; Table 2 uses IS data, IS is an integrating sphere, which is a general luminance measuring instrument of a LED packaging factory.
[0159] BASE is the related art, and Test 1 is the embodiment of the present disclosure. VF is voltage, the unit is V, and △VF is the voltage offset value of the embodiment of the present disclosure relative to the related art; LOP is light output power (light intensity), the unit is mcd, and △LOP is the luminance improvement percentage of the embodiment of the present disclosure relative to the related art; WLD is wavelength, the unit is nm.
[0160] Table 1
[0161]
[0162]
[0163] Table 2
[0164]
[0165]
[0166] Figure 5 The following Table 1 and Table 2 are test results of the light emitting diode and the light emitting diode of the related art provided by the embodiment of the present disclosure. Table 1 is COT data, which is data tested by a test machine of a LED factory; Table 2 uses IS data, IS is an integrating sphere, which is a general luminance measuring instrument of a LED packaging factory.
[0167] In combination with Table 1, Table 2 and Figure 5 It can be seen that the overall luminance of the light emitting diode provided by the embodiment of the present disclosure is improved by about 2.5%.
[0168] The above is only an optional embodiment of the present disclosure, and does not limit the present disclosure. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present disclosure shall be included in the protection scope of the present disclosure.
Claims
1. A light emitting diode, characterized by, The light emitting diode comprises an epitaxial structure (10), a current blocking layer (20), a current spreading layer (30), a first electrode (40) and a second electrode (50); The epitaxial structure (10) comprises a step structure, the step structure comprises a step bottom surface, a step top surface and a step sidewall connecting the step bottom surface and the step top surface; The current blocking layer (20) comprises a first part (201) covering the step top surface edge and the step sidewall, and a second part (202) located in the middle of the step top surface; The current spreading layer (30) covers the first part (201) and the second part (202), and is connected with the epitaxial structure (10) through the gap between the first part (201) and the second part (202); The first electrode (40) is connected with the step bottom surface, and the second electrode (50) is connected with the current spreading layer (30).
2. The light emitting diode of claim 1, wherein, The distance (a) between the edge of the current spreading layer (30) and the outer edge of the first part (201) is 1-4 μm.
3. The light emitting diode according to claim 1 or 2, characterized in that The width (b) of the first part (201) is 2-5 μm.
4. The light emitting diode according to claim 1 or 2, wherein The thickness of the part of the first part (201) above the step top surface is equal to the thickness of the second part (202).
5. The light emitting diode of claim 4, wherein, The thickness of the second part (202) is 0.01-100 μm.
6. The light emitting diode according to claim 1 or 2, wherein The second part (202) comprises a main body part (2021), an annular part (2022) surrounding the main body part (2021), and an extension part (2023) connected with the annular part (2022), and the current spreading layer (30) is also connected with the epitaxial structure (10) through the gap between the main body part (2021) and the annular part (2022); The current spreading layer (30) has a through hole (301), the through hole (301) is located on the main body part (2021), and the second electrode (50) contacts the main body part (2021) through the through hole (301).
7. A method of fabricating a light emitting diode, comprising: The method comprises An epitaxial structure is prepared, the epitaxial structure comprises a step structure, the step structure comprises a step bottom surface, a step top surface and a step sidewall connecting the step bottom surface and the step top surface; A current blocking layer is prepared, the current blocking layer comprises a first part covering the step top surface edge and the step sidewall, and a second part located in the middle of the step top surface; A current spreading layer is prepared, the current spreading layer covers the first part and the second part, and is connected with the epitaxial structure through the gap between the first part and the second part; A first electrode and a second electrode are prepared, the first electrode is connected with the step bottom surface, and the second electrode is connected with the current spreading layer.
8. The method of claim 7, wherein, The distance between the edge of the current spreading layer and the outer edge of the first part is 1-4 μm.
9. The method according to claim 7 or 8, characterized in that, The width of the first part is 2-5 μm.
10. The method according to claim 7 or 8, characterized in that, The second part comprises a main body part, an annular part surrounding the main body part, and an extension part connected with the annular part, and the current spreading layer is connected with the epitaxial structure through a gap between the main body part and the annular part; The current spreading layer has a through hole, the through hole is located on the main body part, and the second electrode is in contact with the main body part through the through hole.