Preparation method and application of alkaline cleaning agent for monocrystalline silicon

Abstract

The invention relates to a preparation method and application of an alkaline cleaning agent for monocrystalline silicon, which comprises the following steps: adding a prepared dissolving agent solution into a prepared accelerant solution, fully mixing to prepare a solution, adding a surfactant solution and a pH regulator, and reacting to obtain the alkaline cleaning agent for monocrystalline silicon. Compared with the prior art, the preparation method has the following beneficial effects that the dissolving effect of the cleaning agent on a monocrystalline silicon scale layer can be remarkably improved, the monocrystalline silicon scale layer attached to glass is effectively damaged without damaging a glass substrate, and the cleaning agent can still keep a stable monocrystalline silicon cleaning effect in a high-temperature environment, so that the cleaning agent has a good cleaning effect on the monocrystalline silicon scale layer. Wide industrial application prospects are realized; in addition, the dissolving agent is combined with the accelerant to achieve a synergistic effect with the surfactant, so that a monocrystalline silicon scale sample can be efficiently dissolved, the reaction rate is remarkably increased, meanwhile, the cleaning agent is mild and free of damage to base materials such as glass, has good permeation, dispersion and stability performance, is thorough in cleaning and free of residues, is simple in preparation method and environmentally friendly, and is suitable for safe and efficient cleaning under complex working conditions.

Description

Technical Field

[0001] This invention relates to the fields of industrial photovoltaic material recycling technology and industrial cleaning, and particularly to a method for preparing a monocrystalline silicon alkaline cleaning agent and its application in cleaning monocrystalline silicon layers attached to glass. Background Technology

[0002] With the rapid development of the photovoltaic industry, the number of retired or scrapped photovoltaic modules is constantly increasing, making the demand for resource recycling increasingly urgent. Tempered glass, widely used in photovoltaic modules, has high recycling value. Effective separation and reuse would greatly improve recycling efficiency and economic benefits. However, in actual recycling processes, a layer of monocrystalline silicon residue often adheres tightly to the glass surface. This layer, formed through hot pressing, is firmly bonded to the glass and is difficult to completely remove using conventional physical methods, severely affecting the quality of recycled glass.

[0003] Currently, the traditional method for removing monocrystalline silicon residue from glass surfaces involves chemical etching using hydrofluoric acid (HF). While HF possesses some silicon-corroding ability, its extreme corrosiveness damages the glass itself and generates toxic gases during operation, posing significant operational risks and environmental pollution, making it difficult to meet the requirements of green, safe, and sustainable recycling. Furthermore, the use of HF is constrained by strict safety controls and environmental regulations, further limiting its application in large-scale recycling. Traditional alkaline cleaning methods, while possessing some dissolving ability for monocrystalline silicon, often suffer from low reaction rates, glass surface corrosion, and poor formulation stability, making it difficult to balance cleaning efficiency with glass protection.

[0004] Therefore, to solve one of the above problems, a new type of monocrystalline silicon alkaline cleaning agent is needed, which can efficiently dissolve monocrystalline silicon residues on the glass surface without corroding the glass body, and the operation process is safe and environmentally friendly, making it especially suitable for the high-quality recycling of photovoltaic glass materials. Summary of the Invention

[0005] In view of the shortcomings of the prior art, the technical problem to be solved by the present invention is to provide a method for preparing a monocrystalline silicon alkaline cleaning agent, thereby preparing a novel monocrystalline silicon alkaline cleaning agent that solves the problems of existing conventional physical methods being unable to completely remove the plaque and being unable to balance cleaning efficiency and glass protection. This method can effectively clean the monocrystalline silicon scale layer attached to the glass surface, improve the cleaning efficiency of monocrystalline silicon, reduce the maintenance cost of industrial equipment, and has broad prospects for industrial application.

[0006] To achieve the above objectives, the present invention provides the following technical solution: A method for preparing a monocrystalline silicon alkaline cleaning agent includes adding a prepared solvent solution to a prepared accelerator solution, mixing thoroughly to form a solution, adding a surfactant solution and a pH adjuster, and reacting to obtain the monocrystalline silicon alkaline cleaning agent.

[0007] Preferably, a method for preparing a monocrystalline silicon alkaline cleaning agent includes the following steps: mixing the prepared solvent solution and the prepared accelerator solution in a 1:1 ratio, dissolving them in a magnetic stirrer for 10 to 15 minutes, slowly adding 0.1% to 0.5% surfactant solution during this period, and after mixing evenly, adding a pH adjuster to adjust the pH to 12, thus obtaining the monocrystalline silicon alkaline cleaning agent.

[0008] Preferably, the solvent in the solvent solution is one of CH (choline hydroxide), APC (propyl azidocholine), TMAH (tetramethylammonium hydroxide), TEAH (tetraethylammonium hydroxide), NaOH, and KOH.

[0009] Preferably, the mass fraction of the solvent solution is 10% to 20%.

[0010] Preferably, the preparation steps of the solvent solution are as follows: weigh the required solvent into a beaker or volumetric flask according to the proportion, add an appropriate amount of deionized water, and place the beaker or volumetric flask containing the solution on a magnetic stirrer and stir continuously for 10 to 15 minutes until the solvent is completely dissolved.

[0011] Preferably, the accelerator in the accelerator solution is one of HOSA (hydroxylamine-O-sulfonic acid), HAS (hydroxylamine sulfate), HY (hydroxylamine), and OMHA (O-methylhydroxylamine).

[0012] Preferably, the mass fraction of the accelerator solution is 5% to 10%.

[0013] Preferably, the preparation steps of the accelerator solution are as follows: weigh the required accelerator into a beaker or volumetric flask according to the proportion, add an appropriate amount of deionized water, and place the beaker or volumetric flask containing the solution on a magnetic stirrer and stir continuously for 10 to 15 minutes until the accelerator is completely dissolved.

[0014] Preferably, the solute in the surfactant solution is one of SDBS (sodium dodecylbenzene sulfonate), SDSO (sodium dodecyl sulfonate), and AOS (sodium α-olefin sulfonate).

[0015] Preferably, the surfactant solution has a mass fraction of 0.1% to 0.5%.

[0016] Preferably, the pH adjuster is one of NaOH, KOH, or NH3·H2O.

[0017] The application of the monocrystalline silicon alkaline cleaning agent obtained by the preparation method of the monocrystalline silicon alkaline cleaning agent described in this invention is as follows: A pre-weighed mass of monocrystalline silicon scale layer attached to the glass is added to the prepared monocrystalline silicon alkaline cleaning agent solution, and then a monocrystalline silicon cleaning experiment is carried out in a water bath at 70°C. The scale layer is weighed and recorded at intervals of 30 min, 60 min, 120 min, 300 min, 600 min, 900 min, and 1200 min. After the scale layer attached to the monocrystalline silicon scale layer is completely dissolved, the final reaction time is recorded.

[0018] The technical solution described in this invention has the following advantages compared with the prior art: The preparation method described in this invention can significantly improve the dissolution effect of cleaning agents on monocrystalline silicon scale layers. The combination of solvent, accelerator, and surfactant can promote electron transfer of Si-H / Si-O bonds and generate active sites. Soluble silicates can be formed during the reaction, and the corrosion of glass is inhibited due to the stability of the silica network and the low electron transfer efficiency. This effectively destroys the monocrystalline silicon layer attached to the glass without damaging the glass substrate. Furthermore, the cleaning agent can maintain a stable monocrystalline silicon cleaning effect even at high temperatures, showing broad industrial application prospects. In addition, the synergistic effect of the solvent, accelerator, and surfactant can efficiently dissolve monocrystalline silicon scale samples, significantly accelerate the reaction rate, and is gentle and non-destructive to substrates such as glass. It has good penetration, dispersion, and stability properties, cleans thoroughly without residue, and the preparation method is simple and environmentally friendly, suitable for safe and efficient cleaning under complex working conditions.

[0019] The solvent used in the preparation method of this invention not only has excellent selective etching ability for monocrystalline silicon, which can quickly destroy the silicon lattice and convert it into soluble silicates, thus efficiently removing monocrystalline silicon scale, but also has the advantage of extremely low corrosion rate on glass and quartz layers, which can thoroughly clean while avoiding damage to the attached glass. At the same time, it remains stable under high temperature and high pH conditions, making it suitable for complex industrial conditions, and can maintain its activity for a long time in neutral to alkaline water. Unlike traditional strong alkalis, the solvent does not introduce additional metal ions, making wastewater treatment simpler and more environmentally friendly.

[0020] The accelerator used in the preparation method of this invention not only significantly improves the dissolution rate of the solvent on the monocrystalline silicon scale layer, accelerating silicon lattice breakage and surface dissolution reaction, effectively shortening the cleaning time, but also has excellent stability, not easily decomposing or failing under high temperature and high alkalinity conditions, ensuring that the entire cleaning process is efficient and reliable. In addition, the accelerator and solvent have a good synergistic effect, do not affect the compatibility with glass substrates, and have a reasonable molecular structure design, are environmentally friendly and highly biodegradable, meeting industrial performance requirements while reducing potential impacts on operators and ecosystems.

[0021] The surfactant used in the preparation method described in this invention not only significantly reduces the surface tension of the solution and enhances the wetting and penetration ability of the system on monocrystalline silicon scale, making it easier for the solvent-accelerator combination to penetrate into the micropores of silicon scale and quickly break the crystal lattice, thus accelerating dissolution; its excellent dispersing and emulsifying effects can stably suspend the generated silicates and entrained impurities, preventing secondary deposition or agglomeration, further shortening the cleaning time and improving the uniformity of scale removal; at the same time, the surfactant is chemically stable in high temperature and high alkalinity environments, has almost no corrosion to glass and quartz layers, is easy to rinse, and leaves no foam residue; as a biodegradable anionic surfactant, the waste liquid treatment is more environmentally friendly, and the overall process is more friendly to operators and the environment. Attached Figure Description

[0022] The accompanying drawings, which form part of this application, are used to provide a further understanding of this application. The illustrative embodiments and descriptions of this application are used to explain this application and do not constitute an undue limitation of this application. In the drawings: Figure 1 The Raman image used in the experiment of Example 2-16 is a characterization image of the single-crystal silicon scale layer on the glass. Figure 2 The XRD used in Example 2-16 is for characterizing the single-crystal silicon scale layer on the glass. Figure 3 The SEM image used in Example 2-16 is for characterizing the monocrystalline silicon scale layer on the glass. Figure 4 The above is an EDS image characterizing the monocrystalline silicon scale layer on the glass used in the experiment of Example 2-16. Figure 5 The image shows the dissolution curve of the cleaning agent obtained in Example 2-16 cleaning the single crystal silicon layer sample within 1200 min. Figure 6 This is a detailed curve showing the dissolution of a single-crystal silicon layer sample cleaned with the cleaning agent obtained in Experiment 2-16 within 120 minutes. Figure 7 The image shows the dissolution curves of single-crystal silicon layer samples cleaned with cleaning agents obtained using different accelerators in Experiment 2-16. Detailed Implementation

[0023] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, other embodiments obtained by those skilled in the art without creative effort are all within the protection scope of the present invention.

[0024] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0025] Example 1: A method for preparing an accelerator solution, taking the preparation of HOSA solution as an example, includes the following steps: Add HOSA and deionized water to a reaction flask and place it on a magnetic stirrer. Stir continuously for 10 to 15 minutes until completely dissolved to prepare a 10% HOSA solution.

[0026] Example 2: A method for preparing a monocrystalline silicon alkaline cleaning agent, taking the preparation of CH solution as an example, includes the following steps: (1) Add CH and deionized water to the reaction flask and place it on a magnetic stirrer for stirring. Continue stirring for 10 to 15 minutes until completely dissolved to prepare a CH solution with a mass fraction of 15%.

[0027] (2) The prepared CH solution was added to the HOSA solution in Example 1 at a ratio of 1:1. The solution was dissolved on a magnetic stirrer for 10 to 15 minutes. 0.3% SDBS was slowly added, and after thorough mixing, NaOH solution was added to adjust the pH to 12. The resulting monocrystalline silicon alkaline cleaning agent was then obtained. For ease of differentiation, the monocrystalline silicon alkaline cleaning agent in Example 2 was named CH-HOSA. (Characteristics...) Figure 5 , Figure 6 , Figure 7 The curve CH-HOSA described in the text.

[0028] Example 3: A method for preparing a monocrystalline silicon alkaline cleaning agent, which differs from Example 2 in that the solvent is APC, and includes the following steps: (1) Add APC and deionized water to the reaction flask and place it on a magnetic stirrer for stirring. Continue stirring for 10 to 15 minutes until completely dissolved to prepare a 10% APC solution.

[0029] (2) The prepared APC solution was added to the HOSA solution in Example 1 at a ratio of 1:1. The solution was dissolved on a magnetic stirrer for 10 to 15 minutes. 0.3% SDBS was slowly added, and after thorough mixing, NaOH solution was added to adjust the pH to 12. The resulting monocrystalline silicon alkaline cleaning agent was then obtained. For ease of differentiation, the monocrystalline silicon alkaline cleaning agent in Example 3 was named APC-HOSA. (Characteristics...) Figure 5 , Figure 6 The curve described in the text is APC-HOSA.

[0030] Example 4: A method for preparing a monocrystalline silicon alkaline cleaning agent differs from Example 2 in that the solvent is TMAH, and includes the following steps: (1) Add TMAH and deionized water to the reaction flask and place it on a magnetic stirrer for stirring. Continue stirring for 10 to 15 minutes until completely dissolved to prepare a TMAH solution with a mass fraction of 12%.

[0031] (2) The prepared TMAH solution was added to the HOSA solution in Example 1 at a ratio of 1:1. The mixture was placed on a magnetic stirrer and dissolved for 10 to 15 minutes. 0.3% SDBS was slowly added, and after thorough mixing, NaOH solution was added to adjust the pH to 12. The resulting monocrystalline silicon alkaline cleaning agent was then obtained. For ease of differentiation, the monocrystalline silicon alkaline cleaning agent in Example 4 was named TMAH-HOSA. (Characteristics...) Figure 5 , Figure 6 The curve TMAH-HOSA described in the text.

[0032] Example 5: A method for preparing a monocrystalline silicon alkaline cleaning agent, differing from Example 2 in that the solvent is TEAH, comprising the following steps: (1) Add TEAH and deionized water to the reaction flask and place it on a magnetic stirrer for stirring. Continue stirring for 10 to 15 minutes until completely dissolved to prepare a TEAH solution with a mass fraction of 18%.

[0033] (2) The prepared TEAH solution was added to the HOSA solution in Example 1 at a ratio of 1:1. The mixture was placed on a magnetic stirrer and dissolved for 10 to 15 minutes. 0.3% SDBS was slowly added, and after thorough mixing, NaOH solution was added to adjust the pH to 12. The resulting monocrystalline silicon alkaline cleaning agent was then obtained. For ease of differentiation, the monocrystalline silicon alkaline cleaning agent in Example 5 was named TEAH-HOSA. (Characteristics...) Figure 5 , Figure 6 The curve TEAH-HOSA described in the text.

[0034] Example 6: A method for preparing a single-crystal silicon alkaline cleaning agent, which differs from Example 2 in that the solvent is NaOH, and includes the following steps: (1) Add NaOH and deionized water to the reaction flask and place it on a magnetic stirrer for stirring. Continue stirring for 10 to 15 minutes until completely dissolved to prepare a 20% NaOH solution.

[0035] (2) The prepared NaOH solution was added to the HOSA solution in Example 1 at a ratio of 1:1. The solution was dissolved on a magnetic stirrer for 10 to 15 minutes. 0.3% SDBS was slowly added, and after thorough mixing, a monocrystalline silicon alkaline cleaning agent was finally obtained. For ease of differentiation, the monocrystalline silicon alkaline cleaning agent in Example 6 was named NaOH-HOSA. (Characteristics...) Figure 5 , Figure 6 The curve described in the text is NaOH-HOSA.

[0036] Example 7: A method for preparing a monocrystalline silicon alkaline cleaning agent, which differs from Example 2 in that the solvent is KOH, and includes the following steps: (1) Add KOH and deionized water to the reaction flask and place it on a magnetic stirrer for stirring. Continue stirring for 10 to 15 minutes until completely dissolved to prepare a KOH solution with a mass fraction of 20%.

[0037] (2) The prepared KOH solution was added to the HOSA solution in Example 1 at a ratio of 1:1, and dissolved on a magnetic stirrer for 10 to 15 minutes. 0.3% SDBS was slowly added, and after thorough mixing, a monocrystalline silicon alkaline cleaning agent was finally obtained. For ease of differentiation, the monocrystalline silicon alkaline cleaning agent in Example 7 was named KOH-HOSA. (Characteristics...) Figure 5 , Figure 6 The curve KOH-HOSA described in the text.

[0038] Example 8: A method for preparing a monocrystalline silicon alkaline cleaning agent, which differs from Example 2 in that no accelerator is used, and includes the following steps: (1) Add CH and deionized water to the reaction flask and place it on a magnetic stirrer for stirring. Continue stirring for 10 to 15 minutes until completely dissolved to prepare a CH solution with a mass fraction of 15%.

[0039] (2) Slowly add 0.3% SDBS to the prepared CH solution. After mixing evenly, add NaOH solution to adjust the pH to 12, finally obtaining the monocrystalline silicon alkaline cleaning agent. For easy differentiation, the monocrystalline silicon alkaline cleaning agent in Example 8 is named CH. (Characteristics...) Figure 5 The curve CH described in the text.

[0040] Example 9: A method for preparing a monocrystalline silicon alkaline cleaning agent, which differs from Example 3 in that no accelerator is used, and includes the following steps: (1) Add APC and deionized water to the reaction flask and place it on a magnetic stirrer for stirring. Continue stirring for 10 to 15 minutes until completely dissolved to prepare a 10% APC solution.

[0041] (2) Slowly add 0.3% SDBS to the prepared APC solution. After mixing evenly, add NaOH solution to adjust the pH to 12, finally obtaining the monocrystalline silicon alkaline cleaning agent. For easy differentiation, the monocrystalline silicon alkaline cleaning agent in Example 9 is named APC. (Characteristics...) Figure 5 , Figure 6 The curve APC described in the figure.

[0042] Example 10: A method for preparing a monocrystalline silicon alkaline cleaning agent, which differs from Example 4 in that no accelerator is used, and includes the following steps: (1) Add TMAH and deionized water to the reaction flask and place it on a magnetic stirrer for stirring. Continue stirring for 10 to 15 minutes until completely dissolved to prepare a TMAH solution with a mass fraction of 12%.

[0043] (2) Slowly add 0.3% SDBS to the prepared TMAH solution. After mixing evenly, add NaOH solution to adjust the pH to 12, finally obtaining the monocrystalline silicon alkaline cleaning agent. For easy differentiation, the monocrystalline silicon alkaline cleaning agent in Example 10 is named TMAH. (Characteristics...) Figure 5 The curve TMAH described in the text.

[0044] Example 11: A method for preparing a monocrystalline silicon alkaline cleaning agent, which differs from Example 5 in that no accelerator is used, and includes the following steps: Add TEAH and deionized water to a reaction flask and place it on a magnetic stirrer for stirring. Continue stirring for 10 to 15 minutes until completely dissolved to prepare a TEAH solution with a mass fraction of 18%.

[0045] To the prepared TEAH solution, 0.3% SDBS was slowly added. After mixing thoroughly, NaOH solution was added to adjust the pH to 12, finally obtaining the monocrystalline silicon alkaline cleaning agent. For ease of distinction, the monocrystalline silicon alkaline cleaning agent in Example 11 was named TEAH. (Characteristics...) Figure 5 The curve TEAH described in the text.

[0046] Example 12: A method for preparing a monocrystalline silicon alkaline cleaning agent, which differs from Example 6 in that no accelerator is used, and includes the following steps: (1) Add NaOH and deionized water to the reaction flask and place it on a magnetic stirrer for stirring. Continue stirring for 10 to 15 minutes until completely dissolved to prepare a 20% NaOH solution.

[0047] (2) Slowly add 0.3% SDBS to the prepared NaOH solution. After mixing evenly, the monocrystalline silicon alkaline cleaning agent is finally obtained. For easy distinction, the monocrystalline silicon alkaline cleaning agent in Example 12 is named NaOH. (Characteristics...) Figure 5 The curve described in the text is NaOH.

[0048] Example 13: A method for preparing a monocrystalline silicon alkaline cleaning agent, which differs from Example 7 in that no accelerator is used, and includes the following steps: (1) Add 20% KOH and deionized water to the reaction flask and place it on a magnetic stirrer for stirring. Continue stirring for 10 to 15 minutes until completely dissolved to prepare a 20% KOH solution.

[0049] (2) Slowly add 0.3% SDBS to the prepared KOH solution. After mixing evenly, the monocrystalline silicon alkaline cleaning agent is finally obtained. For easy distinction, the monocrystalline silicon alkaline cleaning agent in Example 13 is named KOH. (Characteristics...) Figure 5 The curve KOH described in the text.

[0050] Example 14: A method for preparing a monocrystalline silicon alkaline cleaning agent, differing from Example 2 in that the accelerator used is a HAS solution, comprising the following steps: (1) Add HAS and deionized water to the reaction flask and place it on a magnetic stirrer to stir for 10 to 15 minutes until completely dissolved to prepare a 10% HAS solution.

[0051] (2) Add CH and deionized water to the reaction flask and place it on a magnetic stirrer for stirring. Continue stirring for 10 to 15 minutes until completely dissolved to prepare a 15% CH solution.

[0052] (3) Add the prepared CH solution to the prepared HAS solution at a 1:1 ratio, place it on a magnetic stirrer to dissolve for 10 to 15 minutes, slowly add 0.3% SDBS, and after mixing evenly, add NaOH solution to adjust the pH to 12, finally obtaining the monocrystalline silicon alkaline cleaning agent. For easy differentiation, the monocrystalline silicon alkaline cleaning agent in Example 14 is named CH-HAS. (Characteristics...) Figure 7 The curve CH-HAS described in the text.

[0053] Example 15: A method for preparing a monocrystalline silicon alkaline cleaning agent, differing from Example 14 in that the accelerator used is a HY solution, comprising the following steps: (1) Add HY and deionized water to the reaction flask and place it on a magnetic stirrer to stir for 10 to 15 minutes until completely dissolved to prepare a HY solution with a mass fraction of 10%. (2) Add CH and deionized water to the reaction flask and place it on a magnetic stirrer for stirring. Continue stirring for 10 to 15 minutes until completely dissolved to prepare a CH solution with a mass fraction of 15%. (3) Add the prepared CH solution to the prepared HY solution at a 1:1 ratio, place it on a magnetic stirrer to dissolve for 10 to 15 minutes, slowly add 0.3% SDBS, and after mixing evenly, add NaOH solution to adjust the pH to 12, finally obtaining the monocrystalline silicon alkaline cleaning agent. For easy differentiation, the monocrystalline silicon alkaline cleaning agent in Example 15 is named CH-HY. (Characteristics...) Figure 7 The curve CH-HY described in the text.

[0054] Example 16: A method for preparing a monocrystalline silicon alkaline cleaning agent, differing from Example 14 in that the accelerator used is an OMHA solution, comprising the following steps: (1) Add OMHA and deionized water to the reaction flask and place it on a magnetic stirrer. Stir continuously for 10 to 15 minutes until completely dissolved to prepare a 10% OMHA solution. (2) Add CH and deionized water to the reaction flask and place it on a magnetic stirrer for stirring. Continue stirring for 10 to 15 minutes until completely dissolved to prepare a CH solution with a mass fraction of 15%. (3) Add the prepared CH solution to the prepared OMHA solution at a 1:1 ratio, place it on a magnetic stirrer to dissolve for 10 to 15 minutes, slowly add 0.3% SDBS, and after mixing evenly, add NaOH solution to adjust the pH to 12, finally obtaining the monocrystalline silicon alkaline cleaning agent. For easy differentiation, the monocrystalline silicon alkaline cleaning agent in Example 16 is named CH-OMHA. (Characteristics...) Figure 7 The curve CH-OMHA described in the text.

[0055] Performance testing: The monocrystalline silicon alkaline cleaning agent obtained in Examples 2-16 was applied to a monocrystalline silicon cleaning experiment to test its cleaning performance. Specifically, a pre-weighed amount of monocrystalline silicon scale adhering to the glass was added to the prepared monocrystalline silicon alkaline cleaning agent solution. The solution was then placed in a 70°C water bath for the monocrystalline silicon cleaning experiment. The scale was weighed and recorded at intervals of 30 min, 60 min, 120 min, 300 min, 600 min, 900 min, and 1200 min. The final reaction time was recorded after the adhering monocrystalline silicon scale had completely dissolved.

[0056] The characterization results of the single-crystal silicon scale layer can be found in Figure 1 , Figure 2 , Figure 3 , Figure 4 The performance test results of the cleaning agent can be found in Figures 5-7 As shown.

[0057] from Figure 1 In the Raman spectrum, there is a characteristic peak at 520 cm⁻¹, which is the characteristic peak of silicon; Figure 2 The XRD pattern shows only one diffraction peak, proving that the silicon scale layer is monocrystalline silicon. Figure 3 SEM and Figure 4 The EDS surface scan results showed that the scale sample contained only Si elements and no other impurity elements.

[0058] The above results indicate that the silicon scale sample used in this invention is a single-crystal silicon scale sample with extremely high purity.

[0059] Figure 5 , Figure 6 As can be seen, the cleaning agents prepared with CH-HOSA, APC-HOSA, TMAH-HOSA, and TEAH-HOSA all completed the removal of 1g of monocrystalline silicon scale adhering to the glass surface within 60 minutes. CH-HOSA and APC-HOSA even shortened the time to 30 minutes, and their dissolution rate was significantly higher than that of the cleaning agents prepared with NaOH-HOSA and KOH-HOSA. This effect is evident in… Figure 6 This effect is even more pronounced in the middle. Although NaOH-HOSA and KOH-HOSA have relatively low dissolution rates, the cleaning effect of the cleaning agent prepared with solvent and accelerator on monocrystalline silicon is still far superior to that of the cleaning agent without accelerator. This effect is evident in... Figure 5 This is even more evident in the middle.

[0060] from Figure 6 , Figure 7As can be seen, when comparing the cleaning agents prepared with CH-HOSA (30 min), APC-HOSA (60 min), TMAH-HOSA (52 min), TEAH-HOSA (28 min), NaOH-HOSA (125 min), KOH-HOSA (120 min), CH-HAS (110 min), CH-HY (120 min), and CH-OMHA (150 min), the cleaning agents containing CH-HOSA and TEAH-HOSA require the shortest time to dissolve the same mass (1 g) of scale. The time required to completely dissolve the scale is 30 min and 28 min, respectively. The scale dissolution efficiency is far higher than other combinations of solvents and accelerators, and far higher than the cleaning rate of traditional industrial cleaning using only NaOH (>1200 min) and only KOH (1200 min). Compared with other accelerators, HOSA exhibits more efficient and faster single-crystal silicon cleaning performance. Although TEAH-HOSA has a slightly higher cleaning efficiency than CH-HOSA, the TEAH concentration is often higher than CH when preparing the cleaning agent. Considering the overall cost and other factors, the present invention prefers to use the CH-HOSA combination.

[0061] Testing revealed that the glass substrate surface was free of visible damage after cleaning in all embodiments, with a mass loss rate of ≤0.05%, which is significantly better than hydrofluoric acid cleaning (glass weight loss rate >3%).

[0062] The foregoing has shown and described the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of the invention. Various changes and modifications can be made to the invention without departing from its spirit and scope, and all such changes and modifications fall within the scope of the present invention as claimed. The scope of protection of the present invention is defined by the appended claims and their equivalents.

[0063] Any aspects of this invention not described in detail are well-known to those skilled in the art.

Claims

1. A method for preparing a single-crystal silicon alkaline cleaning agent, characterized in that, The prepared solvent solution is added to the prepared accelerator solution, and after thorough mixing, a surfactant solution and a pH adjuster are added to react and obtain a monocrystalline silicon alkaline cleaning agent.

2. The method for preparing a single-crystal silicon alkaline cleaning agent according to claim 1, characterized in that, The solvent solution has a mass fraction of 10% to 20%, the accelerator solution has a mass fraction of 5% to 10%, and the surfactant solution has a mass fraction of 0.1% to 0.5%.

3. The method for preparing a single-crystal silicon alkaline cleaning agent according to claim 2, characterized in that, The specific preparation steps are as follows: Mix the prepared solvent solution and the prepared accelerator solution in a 1:1 ratio, place them on a magnetic stirrer to dissolve for 10 to 15 minutes, and slowly add 0.1% to 0.5% surfactant solution during this period. After mixing evenly, add pH adjuster to adjust the pH to 12, and finally obtain monocrystalline silicon alkaline cleaning agent.

4. The method for preparing a single-crystal silicon alkaline cleaning agent according to claim 3, characterized in that, The solvent in the solvent solution is one of CH (choline hydroxide), APC (propyl azidocholine), TMAH (tetramethylammonium hydroxide), TEAH (tetraethylammonium hydroxide), NaOH, and KOH.

5. The method for preparing a single-crystal silicon alkaline cleaning agent according to claim 3, characterized in that, The accelerator in the accelerator solution is one of HOSA (hydroxylamine-O-sulfonic acid), HAS (hydroxylamine sulfate), HY (hydroxylamine), and OMHA (O-methylhydroxylamine).

6. The method for preparing a single-crystal silicon alkaline cleaning agent according to claim 3, characterized in that, The pH adjuster is one of NaOH, KOH, and NH3·H2O.

7. The method for preparing a single-crystal silicon alkaline cleaning agent according to claim 3, characterized in that, The solute in the surfactant solution is one of SDBS (sodium dodecylbenzene sulfonate), SDSO (sodium dodecyl sulfonate), or AOS (sodium α-olefin sulfonate).

8. The method for preparing a single-crystal silicon alkaline cleaning agent according to claim 3, characterized in that, The preparation steps of the solvent solution are as follows: weigh the required solvent into a beaker or volumetric flask according to the proportion, add an appropriate amount of deionized water, and place the beaker or volumetric flask containing the solution on a magnetic stirrer and stir continuously for 10 to 15 minutes until the solvent is completely dissolved.

9. The method for preparing a single-crystal silicon alkaline cleaning agent according to claim 2, wherein the preparation steps of the accelerator solution are as follows: weigh the required accelerator into a beaker or volumetric flask according to the proportion, add an appropriate amount of deionized water, and place the beaker or volumetric flask containing the solution on a magnetic stirrer and stir continuously for 10 to 15 minutes until the accelerator is completely dissolved.

10. An application of a monocrystalline silicon alkaline cleaning agent prepared by the method described in claim 3, characterized in that, Add a pre-weighed amount of monocrystalline silicon scale adhering to the glass to the prepared monocrystalline silicon alkaline cleaning agent solution, and then place it in a 70℃ water bath for monocrystalline silicon cleaning experiment. Weigh and record the scale at intervals of 30 min, 60 min, 120 min, 300 min, 600 min, 900 min, and 1200 min. Record the final reaction time after the attached monocrystalline silicon scale is completely dissolved.

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