Gallium nitride power amplifier based on ultra-wideband millimeter waves

Abstract

The invention discloses a gallium nitride power amplifier based on ultra-wideband millimeter waves, relates to the technical field of integrated circuits, and is used for solving the problem that the design of an ultra-wideband power amplifier in the prior art is difficult to realize large bandwidth and high efficiency at the same time. Comprising an input-stage amplifier, a GaN power tube module and an output-stage amplifier, the GaN power tube module comprises a first GaN power tube unit and a second GaN power tube unit; the input-stage amplifier is of a distributed structure, and the input-stage amplifier at least comprises a stability network and a first GaN power tube unit; the output-stage amplifier is of a reactance matching structure, and the output-stage amplifier at least comprises a second GaN power tube unit. The technical scheme provided by the invention can simultaneously realize large bandwidth and high efficiency.

Description

Technical Field

[0001] This invention relates to the field of integrated circuit technology, and in particular to an ultra-wideband millimeter-wave gallium nitride power amplifier. Background Technology

[0002] With the development of radio frequency (RF) wireless communication systems, new application scenarios such as aerospace, phased array radar, and 5G base stations have emerged, placing higher demands on the performance of RF power amplifiers. In almost all transmission systems, the power amplifier is indispensable, serving as a core module determining the system's linearity, power consumption, and efficiency. As new application scenarios emerge, the performance requirements for power amplifiers become increasingly stringent, demanding high efficiency, high output power, and greater bandwidth. Therefore, the demand for ultra-wideband, high-efficiency power amplifiers will continue to grow.

[0003] With the rapid development of communication technology, information sources in both military and civilian fields have become increasingly diversified. Different communication standards and systems place increasingly higher demands on the bandwidth of power amplifiers. Ultra-wideband millimeter-wave power amplifiers, in particular, have important applications in the military field, such as precision tracking radar and millimeter-wave electronic warfare systems. Data shows that 5G power consumption will be 70% higher than 4G. By 2025, global data center energy consumption will account for 18% of total energy consumption. While this growth is occurring, emissions must be reduced, thus placing extremely high demands on the conversion efficiency in the power amplification process. During power amplification, the losses of power devices are completely wasted. Traditional power devices are made of silicon, which does not meet carbon emission requirements, while GaN has material advantages and can be used to create high-speed switches. Its significant characteristics are low on-resistance and low switching losses, providing higher system efficiency and reducing power loss. Due to its fast switching characteristics, power density can also be greatly improved, allowing for greater output power on a single integrated circuit. GaN's high-frequency characteristics are two to three times better than silicon, enabling power amplifiers to operate at higher frequencies, with smaller chip sizes and better heat dissipation.

[0004] The development of GaN technology facilitates the realization of compact, ultra-wideband, high-efficiency, and high-power power amplifiers (MMICs), meeting the requirements of base station miniaturization, reduced power loss, and high output power. Traditional broadband power amplifier topologies struggle to achieve ultra-wideband designs or high-efficiency ultra-wideband designs. While most current ultra-wideband power amplifiers achieve ultra-wideband performance, their efficiency is relatively low, making them unsuitable for use in various small base stations or portable communication devices. Furthermore, most ultra-wideband power amplifier designs struggle to simultaneously achieve both high bandwidth and high efficiency.

[0005] Therefore, there is an urgent need to provide a more reliable ultra-wideband millimeter-wave gallium nitride power amplifier. Summary of the Invention

[0006] The purpose of this invention is to provide an ultra-wideband millimeter-wave gallium nitride power amplifier to solve the problem that it is difficult to achieve both large bandwidth and high efficiency in the design of existing ultra-wideband power amplifiers.

[0007] To achieve the above objectives, the present invention provides the following technical solution:

[0008] In a first aspect, the present invention provides an ultra-wideband millimeter-wave gallium nitride power amplifier, comprising at least:

[0009] Input stage amplifier, GaN power transistor module, and output stage amplifier;

[0010] The GaN power transistor module includes a first GaN power transistor unit and a second GaN power transistor unit; the input stage amplifier has a distributed structure, and the input stage amplifier includes at least a stability network and the first GaN power transistor unit; the output stage amplifier has a reactance matching structure, and the output stage amplifier includes at least the second GaN power transistor unit.

[0011] Optionally, the stability network includes a stabilizing capacitor, a stabilizing resistor, and a first resistor;

[0012] The input stage amplifier further includes at least: a first capacitor, a first transistor, a second transistor, a third transistor, and a fourth transistor;

[0013] One end of the stabilizing capacitor and one end of the stabilizing resistor are both connected to the first capacitor. The other end of the stabilizing resistor and the other end of the first resistor are connected to the gate of the first transistor. The gates of the second transistor, the third transistor, and the fourth transistor are respectively connected to the other ends of the stabilizing resistor and the first resistor via transmission lines. The drains of the first transistor, the second transistor, the third transistor, and the fourth transistor are all connected to corresponding transmission lines. The transmission lines include multiple transmission lines.

[0014] Optionally, the output stage amplifier includes at least a second capacitor, a third capacitor, a fifth transistor, and a sixth transistor;

[0015] One end of the second capacitor is connected to the input stage amplifier, and the other end of the second capacitor is connected to the gate of the fifth transistor and the gate of the sixth transistor respectively through a transmission line; the drain of the fifth transistor and the drain of the sixth transistor are connected to the third capacitor through a transmission line.

[0016] Optionally, by adjusting the values ​​of the stabilizing capacitor, the stabilizing resistor, and the first resistor, a stability coefficient that meets the conditions is determined to adjust the amplifier to an unconditionally stable state; the stability coefficient is greater than 1.

[0017] Optionally, the first GaN power transistor unit includes four transistors connected in parallel; the second GaN power transistor unit includes two transistors connected in parallel.

[0018] Optionally, the output matching network of the output stage amplifier adopts an inverted T-type matching network.

[0019] Optionally, the gate of the GaN power transistor module is connected to the input matching network, and the drain of the GaN power transistor module is connected to the output matching network.

[0020] Optionally, the inverted-T matching network is connected to the third capacitor, and the inverted-T matching network is composed of the three transmission lines in the output stage amplifier.

[0021] Optionally, the input matching network consists of the second capacitor and four transmission lines.

[0022] Optionally, the distributed structure of the input stage amplifier is used to convert the source impedance to the preset source impedance of each GaN power transistor unit in the ultra-wideband range, while providing ultra-wideband inter-stage matching performance.

[0023] Compared with existing technologies, this invention provides an ultra-wideband millimeter-wave gallium nitride (GaN) power amplifier, comprising an input stage amplifier, a GaN power transistor module, and an output stage amplifier. The GaN power transistor module includes a first GaN power transistor unit and a second GaN power transistor unit. The input stage amplifier has a distributed structure and includes at least a stability network and a first GaN power transistor unit. The output stage amplifier has a reactance-matched structure and includes at least a second GaN power transistor unit. In the ultra-wideband millimeter-wave power amplifier topology proposed in this invention, the distributed structure of the input stage amplifier enables ultra-wideband input matching, while the reactance-matched structure of the output stage effectively improves the efficiency and output power of the power amplifier. It eliminates the need for inductors in the matching process, further enhancing the output power and efficiency of the power amplifier, while simultaneously achieving large bandwidth and high efficiency. Attached Figure Description

[0024] The accompanying drawings, which are included to provide a further understanding of the invention and form part of this invention, illustrate exemplary embodiments of the invention and are used to explain the invention, but do not constitute an undue limitation of the invention. In the drawings:

[0025] Figure 1 This is a schematic diagram of a topology for an ultrawideband millimeter-wave gallium nitride power amplifier;

[0026] Figure 2 A schematic diagram of the specific structure of the ultra-wideband millimeter-wave gallium nitride power amplifier chip provided in the embodiment;

[0027] Figure 3 This is a schematic diagram of the input stage amplifier structure;

[0028] Figure 4 This is a schematic diagram of the output stage amplifier structure;

[0029] Figure 5 This is a schematic diagram of a GaN power transistor module;

[0030] Figure 6 A schematic diagram of the electromagnetic field simulation results for the S-parameters of an ultra-wideband millimeter-wave power amplifier;

[0031] Figure 7 This is a schematic diagram of the electromagnetic field simulation results for the power-added efficiency of an ultra-wideband millimeter-wave power amplifier.

[0032] Figure label:

[0033] 1-Input stage amplifier, 11-Distributed structure, 2-Output stage amplifier, 21-Reactor matching structure, 3-First GaN power transistor unit, 4-Second GaN power transistor unit, C1-First capacitor, C2-Second capacitor, C3-Third capacitor, C S1 -Stable capacitor, R S1 - Stabilizing resistor, R1 - First resistor, Q1 - First transistor, Q2 - Second transistor, Q3 - Third transistor, Q4 - Fourth transistor, Q5 - Fifth transistor, Q6 - Sixth transistor, L1 - First transmission line, L2 - Second transmission line, L 3- Third transmission line, L4-fourth transmission line, L5-fifth transmission line, L6-sixth transmission line, L7-seventh transmission line, L8-eighth transmission line, L9-ninth transmission line, L 10 -Tenth transmission line, L 11 -Eleventh transmission line, L 12 - Twelfth transmission line, L 13 Thirteenth transmission line, L 14 - Fourteenth transmission line, L 15 -Fifteenth transmission line, L 16 -Sixteenth transmission line, L 17 -Seventeenth transmission line, L 18 -Eighteenth transmission line, L 19 -Nineteenth transmission line, L 20 -Twentieth transmission line, L 21 - Transmission line 21. Detailed Implementation

[0034] To facilitate a clear description of the technical solutions in the embodiments of the present invention, the terms "first" and "second" are used to distinguish identical or similar items with essentially the same function and effect. For example, the first threshold and the second threshold are merely used to distinguish different thresholds and do not limit their order. Those skilled in the art will understand that the terms "first" and "second" do not limit the quantity or execution order, and that the terms "first" and "second" are not necessarily different.

[0035] It should be noted that in this invention, the terms "exemplary" or "for example" are used to indicate examples, illustrations, or descriptions. Any embodiment or design described as "exemplary" or "for example" in this invention should not be construed as being more preferred or advantageous than other embodiments or designs. Specifically, the use of terms such as "exemplary" or "for example" is intended to present the relevant concepts in a concrete manner.

[0036] In this invention, "at least one" refers to one or more, and "more than one" refers to two or more. "And / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, or B alone, where A and B can be singular or plural. The character " / " generally indicates that the preceding and following related objects are in an "or" relationship. "At least one of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, at least one of a, b, or c can represent: a, b, c, a combination of a and b, a combination of a and c, a combination of b and c, or a, b, and c, where a, b, and c can be single or multiple.

[0037] Ultra-wideband millimeter-wave power amplifiers are of great significance for practical applications. High-efficiency millimeter-wave power amplifiers based on ultra-wideband topologies offer advantages in bandwidth and efficiency compared to traditional broadband power amplifiers. Addressing the requirements of ultra-wideband millimeter-wave power amplifiers in terms of bandwidth, output power, and high efficiency, this invention proposes an ultra-wideband millimeter-wave power amplifier. This amplifier topology enables the realization of a high-efficiency ultra-wideband power amplifier in the millimeter-wave frequency band. The proposed ultra-wideband topology significantly improves the efficiency of ultra-wideband power amplifiers, resulting in better overall performance. This high-efficiency ultra-wideband millimeter-wave power amplifier can be applied to a wide range of fields, including radar systems, aerospace, wireless communications, and autonomous driving. The following description, in conjunction with the accompanying drawings, illustrates the solutions provided in the embodiments of this specification:

[0038] first, Figure 1The diagram presents a topology for an ultra-wideband millimeter-wave gallium nitride power amplifier, which includes a distributed structure 11 and a reactance matching structure 21; furthermore, it can be combined with... Figure 2 The detailed circuit diagram of the topology of the ultra-wideband millimeter-wave gallium nitride power amplifier provided by this invention is described below:

[0039] Figure 2 The power amplifier chip provided by this invention mainly comprises three parts:

[0040] Input stage amplifier 1, GaN power transistor module, and output stage amplifier 2.

[0041] The GaN power transistor module may include a first GaN power transistor unit 3 and a second GaN power transistor unit 4; the input stage amplifier 1 is a distributed structure 11, and the input stage amplifier 1 includes at least a stability network and the first GaN power transistor unit 3; the output stage amplifier 2 is a reactance matching structure 21, and the output stage amplifier 2 includes at least the second GaN power transistor unit 4.

[0042] Figure 2 The structure includes an input stage amplifier 1, a GaN power transistor module, and an output stage amplifier 2. The GaN power transistor module includes a first GaN power transistor unit 3 and a second GaN power transistor unit 4. The input stage amplifier 1 has a distributed structure 11 and includes at least a stability network and the first GaN power transistor unit 3. The output stage amplifier 2 has a reactance matching structure 21 and includes at least the second GaN power transistor unit 4. In the ultra-wideband millimeter-wave power amplifier topology proposed in this invention, the distributed structure 11 of the input stage amplifier 1 can achieve ultra-wideband input matching, while the reactance matching structure 21 of the output stage can effectively improve the efficiency and output power of the power amplifier without the need for inductors to participate in matching, further improving the output power and efficiency of the power amplifier, while achieving large bandwidth and high efficiency.

[0043] based on Figure 2 The present specification also provides some specific implementations of the structure, which will be described below.

[0044] Optional, Figure 3 This is a schematic diagram of the input stage amplifier 1, as shown below. Figure 3 As shown, the input stage amplifier 1 may further include at least: a first capacitor C1, a first transistor Q1, a second transistor Q2, a third transistor Q3, and a fourth transistor Q4;

[0045] The stabilizing capacitor C S1 one end and the stabilizing resistor R S1One end of each is connected to the first capacitor C1, and the stabilizing resistor R S1 The other end of the resistor and the other end of the first resistor R1 are connected to the gate of the first transistor Q1; the gates of the second transistor Q2, the third transistor Q3, and the fourth transistor Q4 are respectively connected to the stabilizing resistor R through transmission lines. S1 The other end is connected to the other end of the first resistor R1; the drains of the first transistor Q1, the second transistor Q2, the third transistor Q3 and the fourth transistor Q4 are all connected to the corresponding transmission lines; the transmission lines include multiple transmission lines.

[0046] Optionally, for output stage amplifier 2, Figure 4 This is a schematic diagram of the output stage amplifier 2, as shown below. Figure 4 As shown, the output stage amplifier 2 may include at least a second capacitor C2, a third capacitor C3, a fifth transistor Q5, and a sixth transistor Q6;

[0047] One end of the second capacitor C2 is connected to the input stage amplifier 1, and the other end of the second capacitor C2 is connected to the gate of the fifth transistor Q5 and the gate of the sixth transistor Q6 through transmission lines respectively; the drain of the fifth transistor Q5 and the drain of the sixth transistor Q6 are connected to the third capacitor C3 through transmission lines.

[0048] Furthermore, the input stage amplifier 1 includes a first capacitor C1 and a stabilizing capacitor C. S1 , Stabilizing resistor R S1 The transmission lines are: L1 (first transmission line), L2 (second transmission line), L3 (third transmission line), L4 (fourth transmission line), L5 (fifth transmission line), L6 (sixth transmission line), L7 (seventh transmission line), L8 (eighth transmission line), L9 (ninth transmission line), Q1 (first transistor), Q2 (second transistor), Q3 (third transistor), and Q4 (fourth transistor).

[0049] The structure provided by this invention also includes a tenth transmission line L. 10 11th transmission line L 11 12th transmission line L 12 Thirteenth transmission line L 13 Fourteenth transmission line L 14 15th transmission line L 15 Sixteenth transmission line L 16 17th transmission line L 17 18th transmission line L 18 19th transmission line L 19 20th transmission line L 20 21st transmission line L 21It should be noted that, for ease of description, the subsequent content in the embodiments of this specification directly uses the serial numbers of each structure to distinguish the respective structures of each capacitor, resistor, transistor, and transmission line, and some content no longer uses terms such as "first" or "second" for distinction:

[0050] The structure of the input stage amplifier 1 is as follows: Figure 3 As shown, it includes a first capacitor C1 and a stabilizing capacitor C. S1 , Stabilizing resistor R S1 The transmission lines are: first transmission line L1, second transmission line L2, third transmission line L3, fourth transmission line L4, fifth transmission line L5, sixth transmission line L6, seventh transmission line L7, eighth transmission line L8, ninth transmission line L9, first transistor Q1, second transistor Q2, third transistor Q3, and fourth transistor Q4. The stabilizing capacitor C... S1 , Stabilizing resistor R S1 Together with the first resistor R1, they form a stability network; the first capacitor C1 keeps the DC operating point of the power amplifier stable; the first transmission line L1, the second transmission line L2, the third transmission line L3, the fourth transmission line L4, the fifth transmission line L5, the sixth transmission line L6, the seventh transmission line L7, the eighth transmission line L8, and the ninth transmission line L9 provide output matching.

[0051] The input capacitor, i.e., the first capacitor C1, and the stabilizing resistor R S1 Connected to the first resistor R1, the stabilizing resistor R S1 The other end of the first resistor R1 is connected to the gate of the first transistor Q1; the first transmission line L1, the second transmission line L2, the third transmission line L3, and the fourth transmission line L4 are connected to the gates of the second transistor Q2, the third transistor Q3, and the fourth transistor Q4, respectively; the fifth transmission line L5, the sixth transmission line L6, the seventh transmission line L7, and the eighth transmission line L8 are connected to the drains of the first transistor Q1, the second transistor Q2, the third transistor Q3, and the fourth transistor Q4, respectively; the transistors are GaN transistors.

[0052] DC blocking capacitor, i.e., the second capacitor C2, and the ninth transmission line L9 and the tenth transmission line L 10 Connected; tenth transmission line L 10 11th transmission line L 11 and the twelfth transmission line L 12 Connected; Eleventh transmission line L 11 12th transmission line L 12 The gates of the fifth transistor Q5 and the sixth transistor Q6 are connected respectively; the eighteenth transmission line L 18 17th transmission line L 17 The eighteenth transmission line L is connected to the drains of the fifth transistor Q5 and the sixth transistor Q6, respectively. 18 and the seventeenth transmission line L 17The other end is connected to the nineteenth transmission line L 19 Connected; Nineteenth transmission line L 19 The other end is connected to the twentieth transmission line L 20 and the twenty-first transmission line L 21 The third capacitor C3 is connected.

[0053] Figure 5 This is a schematic diagram of a GaN power transistor module, as shown below. Figure 5 As shown, the GaN power transistor module consists of two parts. The first part comprises four 2×60µm GaNHEMTs connected in parallel; the second part is the GaN power transistor unit of the output stage amplifier 2, which consists of two 8×60µm GaNHEMTs connected in parallel. The gate of the GaN power transistor module is connected to the input matching network, and the drain is connected to the output matching network. The maximum output power of the input stage power transistor unit is 30dBm, and the maximum output power of the output stage power transistor unit exceeds 33dBm. The parallel structure can effectively improve the heat dissipation performance of the GaN die.

[0054] The input matching structure uses a stabilizing capacitor C. S1 , Stabilizing resistor R S1 The stability network, consisting of the first resistor R1 and the stability capacitor C, ensures unconditional stability of the power amplifier. S1 , Stabilizing resistor R S1 The value of the first resistor R1 can easily obtain a stability coefficient that meets the conditions.

[0055] The input stage amplifier circuit uses a distributed structure 11, which can transform the source impedance to the optimal source impedance of the GaN power transistor unit over an ultra-wideband range, while providing ultra-wideband inter-stage matching performance. This is achieved by a stabilizing capacitor C. S1 , Stabilizing resistor R S1 The stability network, consisting of the first resistor R1 and the stability capacitor C, ensures unconditional stability of the power amplifier. S1 , Stabilizing resistor R S1 And the value of the first resistor R1 can easily obtain a stability coefficient (K>1) that meets the conditions.

[0056] Figure 4 In the above, the output stage amplifier 2 includes a second capacitor C2 and a tenth transmission line L. 10 11th transmission line L 11 12th transmission line L 12 Thirteenth transmission line L 13 Fourteenth transmission line L 14 15th transmission line L 15 Sixteenth transmission line L 16 17th transmission line L 17 18th transmission line L 18 19th transmission line L19 20th transmission line L 20 21st transmission line L 21 And the third capacitor C3. The third capacitor C3, the tenth transmission line L 10 11th transmission line L 11 12th transmission line L 12 and the thirteenth transmission line L 13 This forms the input matching network; the thirteenth transmission line L 13 and the fourteenth transmission line L 14 Provides input bias voltage; Fifteenth transmission line L 15 and the sixteenth transmission line L 16 Provides output bias voltage; third capacitor C3 maintains the power amplifier's quiescent operating point stability; seventeenth transmission line L 17 18th transmission line L 18 19th transmission line L 19 20th transmission line L 20 and the twenty-first transmission line L 21 Adjust the impedance to the optimal load impedance of the GaN power transistor unit; Nineteenth transmission line L 19 20th transmission line L 20 Twenty-first transmission line L 21 This constitutes the inverted T-shaped matching network.

[0057] In the above structure, the output stage amplifier 2 is implemented using a reactance matching structure 21, which maintains high efficiency and high power over a wide bandwidth. The output matching network of the output stage amplifier 2 adopts an inverted T-type matching network, which improves upon the traditional broadband reactance matching network and enables broadband high-efficiency impedance matching within a compact chip area.

[0058] Next, to further illustrate the technical solution provided by this invention, taking 0.15µm GaN-on-SiC process as an example, we will explain the detailed circuit schematic and simulation results of an ultra-wideband millimeter-wave power amplifier based on ultra-wideband topology:

[0059] The input matching network provides gate bias V gs = -1.2V, and converts the source impedance to the optimal source impedance of the GaN power transistor module; the GaN power transistor module amplifies the input signal. The first part is the GaN power transistor unit of the input stage amplifier 1, which consists of four 2×60um GaN HEMTs connected in parallel; the second part is the GaN power transistor unit of the output stage amplifier 2, which consists of two 8×60um GaN HEMTs connected in parallel. The supply voltage provided by the output stage amplifier 2 is V. ds=20V, and its impedance at the fundamental frequency is the optimal load impedance of the GaN power transistor module, which is converted to a 50-ohm load by the T-type matching network.

[0060] An example of an ultrawideband millimeter-wave power amplifier topology of this invention is as follows: Figure 1 The circuit schematic of the millimeter-wave power amplifier based on the proposed ultra-wideband power amplifier topology is shown below. Figure 2 As shown, its characteristic is that the input stage uses a distributed amplifier and the output stage uses a reactance-matched amplifier.

[0061] Figure 6 These are the electromagnetic field simulation results of the S-parameters of the ultra-wideband millimeter-wave power amplifier. Figure 6 In the diagram, curve (1) represents the dB(S(2.1)) curve, curve (2) represents the dB(S(1.1)) curve, and curve (3) represents the dB(S(2.2)) curve; m3 represents a frequency freq = 12 GHz, dB(S(2.1)) = 17.925, dB(S(1.1)) = -10.208, dB(S(2.2)) = -8.578; m4 represents a frequency freq = 32.00 GHz, dB(S(2.1)) = 15.377, dB(S(1.1)) = -10.966, dB(S(2.2)) = -6.048; m15 represents a frequency freq = 21.50 GHz, dB(S(2.1)) = 15.006; from Figure 6 It can be seen that the power amplifier operates in the 12-32GHz frequency band. Within the 12-32GHz frequency band, the small signal gain is 15-18dB, S11 is less than -10dB, and S22 is less than -6dB.

[0062] Figure 7 The results are electromagnetic field simulation results of the power-added efficiency of the ultra-wideband millimeter-wave power amplifier. Figure 7 In this context, m1 represents:

[0063] inde p(m1)=29.207

[0064] vs(HB.PAE,Spectrum[1])=29.385

[0065] The case corresponding to RFfreq=3.200E10;

[0066] m2 represents:

[0067] inde p(m2)=30.192

[0068] vs(HB.PAE,Spectrum[1])=24.467

[0069] The case corresponding to RFfreq = 2.000E10;

[0070] m5 means:

[0071] inde p(m5)=31.941

[0072] vs(HB.PAE,Spectrum[1])=32.243

[0073] The case corresponding to RFfreq = 1.600E10;

[0074] m6 means:

[0075] indep(m6) = 33.154

[0076] vs(HB.PAE,Spectrum[1])=54.230

[0077] The case corresponding to RFfreq=2.800E10; from Figure 7 It can be seen that the power-added efficiency of the power amplifiers is greater than 25%.

[0078] Therefore, simulation results show that the ultra-wideband millimeter-wave power amplifier has an output power greater than 30 dBm, a power-added efficiency greater than 25%, and a gain greater than 14 dB. This ultra-wideband millimeter-wave power amplifier possesses advantages such as large bandwidth, high efficiency, and high output power, and can be widely used in mobile communication systems, medical equipment, testing equipment, and other applications.

[0079] The beneficial effects of this invention are as follows: The technical solution provided by this invention includes an input stage amplifier 1, a GaN power transistor module, and an output stage amplifier 2. The input stage amplifier 1 adopts a distributed structure 11, which includes a stability network to ensure that the power amplifier is in an unconditionally stable state, while converting the source impedance to the optimal source impedance of the GaN power transistor module. The GaN power transistor unit consists of two parts: the first part is the GaN power transistor unit of the input stage amplifier 1, which is composed of four 2×60um GaNHEMTs connected in parallel; the second part is the GaN power transistor unit of the output stage amplifier 2, which is composed of two 8×60um GaN HEMTs connected in parallel. The output stage amplifier 2 is implemented using a reactance matching structure 21, which can maintain high efficiency and high power over a wide bandwidth. The output matching network of the output stage amplifier 2 adopts an inverted T-type matching network, which can achieve high-efficiency impedance matching over a wide bandwidth.

[0080] Specifically, the input stage amplifier 1 adopts a distributed structure 11 to achieve ultra-wideband matching performance; the input stage amplifier 1 also includes a stability network responsible for adjusting the amplifier to an absolutely stable state by adjusting capacitor C. s1 Resistance R s1 The value of resistor R1 easily yields a stability coefficient that meets the requirements. The output stage amplifier 2 is implemented using a reactance matching structure 21, which maintains high efficiency and high power over a wide bandwidth. The output matching network of the output stage amplifier 2 adopts an inverted-T matching network, which can achieve high-efficiency impedance matching over a wide bandwidth. This invention has advantages such as ultra-wideband, high output power, and high efficiency. Specifically, this invention proposes a topology for an ultra-wideband millimeter-wave high-efficiency power amplifier, which has advantages such as simple structure, strong applicability, high efficiency, and compact circuitry. This invention belongs to microwave monolithic integrated circuits and can be widely used in mobile communication systems, medical equipment, power systems, etc.

[0081] Although the invention has been described herein in conjunction with various embodiments, those skilled in the art will understand and implement other variations of the disclosed embodiments by reviewing the accompanying drawings, the disclosure, and the appended claims in carrying out the claimed invention. In the claims, the word "comprising" does not exclude other components or steps, and "a" or "an" does not exclude a plurality. A single processor or other unit can implement several functions listed in the claims. While different dependent claims may recite certain measures, this does not mean that these measures cannot be combined to produce good results.

[0082] Although the invention has been described in conjunction with specific features and embodiments, it is obvious that various modifications and combinations can be made therein without departing from the spirit and scope of the invention. Accordingly, this specification and drawings are merely exemplary descriptions of the invention as defined by the appended claims, and are considered to cover any and all modifications, variations, combinations, or equivalents within the scope of the invention. Clearly, those skilled in the art can make various alterations and modifications to the invention without departing from its spirit and scope. Thus, if such modifications and modifications of the invention fall within the scope of the claims and their equivalents, the invention is also intended to include such modifications and modifications.

Claims

1. A gallium nitride power amplifier based on ultra-wideband millimeter-wave power, characterized in that, At least including: Input stage amplifier, GaN power transistor module, and output stage amplifier; The GaN power transistor module includes a first GaN power transistor unit and a second GaN power transistor unit; the input stage amplifier has a distributed structure, and the input stage amplifier includes at least a stability network and the first GaN power transistor unit; the output stage amplifier has a reactance matching structure, and the output stage amplifier includes at least the second GaN power transistor unit.

2. The ultra-wideband millimeter-wave gallium nitride power amplifier according to claim 1, characterized in that, The stability network includes a stabilizing capacitor, a stabilizing resistor, and a first resistor; The input stage amplifier further includes at least: a first capacitor, a first transistor, a second transistor, a third transistor, and a fourth transistor; One end of the stabilizing capacitor and one end of the stabilizing resistor are both connected to the first capacitor. The other end of the stabilizing resistor and the other end of the first resistor are connected to the gate of the first transistor. The gates of the second transistor, the third transistor, and the fourth transistor are respectively connected to the other ends of the stabilizing resistor and the first resistor via transmission lines. The drains of the first transistor, the second transistor, the third transistor, and the fourth transistor are all connected to corresponding transmission lines. The transmission lines include multiple transmission lines.

3. The ultra-wideband millimeter-wave gallium nitride power amplifier according to claim 2, characterized in that, The output stage amplifier includes at least a second capacitor, a third capacitor, a fifth transistor, and a sixth transistor; One end of the second capacitor is connected to the input stage amplifier, and the other end of the second capacitor is connected to the gate of the fifth transistor and the gate of the sixth transistor respectively through a transmission line; the drain of the fifth transistor and the drain of the sixth transistor are connected to the third capacitor through a transmission line.

4. The ultra-wideband millimeter-wave gallium nitride power amplifier according to claim 2, characterized in that, By adjusting the values ​​of the stabilizing capacitor, the stabilizing resistor, and the first resistor, a stability coefficient that meets the conditions is determined to bring the amplifier to an unconditionally stable state; the stability coefficient is greater than 1.

5. The ultra-wideband millimeter-wave gallium nitride power amplifier according to claim 1, characterized in that, The first GaN power transistor unit includes four transistors connected in parallel; the second GaN power transistor unit includes two transistors connected in parallel.

6. The ultra-wideband millimeter-wave gallium nitride power amplifier according to claim 3, characterized in that, The output matching network of the output stage amplifier adopts an inverted T-type matching network.

7. The ultra-wideband millimeter-wave gallium nitride power amplifier according to claim 6, characterized in that, The gate of the GaN power transistor module is connected to the input matching network, and the drain of the GaN power transistor module is connected to the output matching network.

8. The ultra-wideband millimeter-wave gallium nitride power amplifier according to claim 6, characterized in that, The inverted-T matching network is connected to the third capacitor, and the inverted-T matching network is composed of the three transmission lines in the output stage amplifier.

9. The ultra-wideband millimeter-wave gallium nitride power amplifier according to claim 7, characterized in that, The input matching network consists of the second capacitor and four transmission lines.

10. The ultra-wideband millimeter-wave gallium nitride power amplifier according to claim 1, characterized in that, The distributed structure of the input stage amplifier is used to convert the source impedance to the preset source impedance of each GaN power transistor unit in the ultra-wideband range, while providing ultra-wideband inter-stage matching performance.

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