Method for controlling vacuum processing apparatus

Abstract

The invention provides a control method of a vacuum processing apparatus. The purpose of the present invention is to improve displacement of the position and inclination of a mounting table caused by deformation of a processing container. This vacuum processing device is provided with: a processing container capable of maintaining a vacuum atmosphere in the interior thereof; a mounting table which is provided in the processing container and on which a substrate is mounted; a support member that passes through a hole in the bottom of the processing container and supports the placement table from below; a base member that engages with an end portion of the support member positioned outside the processing container, the base member being movable integrally with the mounting table; and a plurality of actuators provided so as to be aligned with each other between the bottom of the processing container and the base member, the plurality of actuators adjusting the position and inclination of the mounting table by relatively moving the base member with respect to the bottom of the processing container.

Description

[0001] This application is a divisional application of the invention patent application with application number 202110728639.1, application date June 29, 2021, entitled "Vacuum Processing Apparatus and Control Method for Vacuum Processing Apparatus". Technical Field

[0002] This disclosure relates to a vacuum processing apparatus and a method for controlling the vacuum processing apparatus. Background Technology

[0003] Patent document 1 discloses a structure in which an adjustment plate for adjusting the tilt of a mounting platform for placing a substrate is disposed below the bottom of a processing container, and the bottom of the processing container is fastened to the adjustment plate by bolts.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2001-230307 Summary of the Invention

[0007] The problem the invention aims to solve

[0008] This disclosure provides a technique for improving the deviation of the position and tilt of the loading platform caused by deformation of the processing container.

[0009] Solution for solving the problem

[0010] A vacuum processing apparatus disclosed herein comprises: a processing container capable of maintaining a vacuum atmosphere inside it; a stage disposed within the processing container for placing a substrate; a support member that supports the stage from below through a hole in the bottom of the processing container; a base member that engages with an end of the support member located outside the processing container, the base member being movable integrally with the stage; and a plurality of actuators arranged between the bottom of the processing container and the base member, the actuators causing the base member to move relative to the bottom of the processing container, thereby adjusting the position and tilt of the stage.

[0011] The effects of the invention

[0012] According to this disclosure, it can improve the deviation of the position and tilt of the platform caused by the deformation of the processing container. Attached Figure Description

[0013] Figure 1This is a schematic top view illustrating an example of the structure of a vacuum processing system according to an embodiment.

[0014] Figure 2 This is an exploded perspective view showing an example of the structure of the vacuum processing apparatus according to the embodiment.

[0015] Figure 3 This is a top view that schematically shows the internal structure of the vacuum processing apparatus according to the embodiment.

[0016] Figure 4 This is a schematic cross-sectional view illustrating an example of the structure of the vacuum processing apparatus according to an embodiment.

[0017] Figure 5 This is a diagram illustrating an example of the structure of the rotary drive mechanism and the adjustment mechanism in the embodiment.

[0018] Figure 6 It means Figure 5 A diagram showing an example of the structure of the absorption mechanism.

[0019] Figure 7 This is a flowchart of Example 1 illustrating the flow of the control method for the vacuum processing apparatus of the embodiment.

[0020] Figure 8 This is a flowchart of Example 2, illustrating the flow of the control method for the vacuum processing apparatus of the embodiment.

[0021] Figure 9 This is a flowchart of Example 3, illustrating the flow of the control method for the vacuum processing apparatus of the embodiment.

[0022] Figure 10 This is a flowchart of Example 4, illustrating the flow of the control method for the vacuum processing apparatus of the embodiment.

[0023] Figure 11 This is a flowchart of Example 5 illustrating the flow of the control method for the vacuum processing apparatus of the embodiment. Detailed Implementation

[0024] Hereinafter, embodiments of the vacuum processing apparatus and control method disclosed in this application will be described in detail with reference to the accompanying drawings. Furthermore, the disclosed vacuum processing apparatus and control method are not limited to the following embodiments.

[0025] When the pressure inside the processing container of a vacuum processing apparatus is switched from atmospheric pressure to a vacuum, the processing container deforms due to the pressure difference. Additionally, the processing container also deforms due to temperature changes. When the processing container deforms, the stress generated by the deformation is transmitted to the mounting platform, causing the position and tilt of the platform to deviate from the desired position and tilt. For example, as shown in Patent Document 1, in a structure where an adjustment plate is positioned below the bottom of the processing container, the deviation in tilt of the mounting platform caused by the deformation of the processing container can be improved by using bolts to make the adjustment plate movable; however, it is difficult to improve the deviation in position of the mounting platform. Therefore, a technology is needed to improve the deviation in position and tilt of the mounting platform caused by the deformation of the processing container.

[0026] (Implementation Method)

[0027] [Structure of the vacuum processing system]

[0028] Figure 1 This is a schematic top view illustrating an example of the structure of a vacuum processing system according to an embodiment. The vacuum processing system 1 includes an inlet / outlet port 11, an inlet / outlet module 12, a vacuum conveying module 13, and a vacuum processing device 2. Figure 1 In this example, the X direction is defined as the left-right direction, the Y direction as the front-back direction, and the Z direction as the up-down direction (height direction). The feed in / out port 11 is positioned near the front in the front-back direction. The feed in / out port 11 is connected to the feed in / out module 12 near the front, facing each other in the front-back direction. The vacuum conveying module 13 is connected to the feed in / out module 12 at its depth, facing each other in the front-back direction.

[0029] A transport container, i.e., a carrier C, for accommodating a substrate to be processed is placed at the inlet / outlet port 11. The substrate is a wafer W, which is a circular substrate with a diameter of, for example, 300 mm. The inlet / outlet module 12 is a module for feeding and sending the wafer W between the carrier C and the vacuum transport module 13. The inlet / outlet module 12 has: an atmospheric pressure transport chamber 121, which uses a transport mechanism 120 to transfer the wafer W to the carrier C in an atmospheric pressure atmosphere; and a loading interlock chamber 122, which switches the atmosphere in which the wafer W is placed between an atmospheric pressure atmosphere and a vacuum atmosphere.

[0030] The vacuum transport module 13 has a vacuum transport chamber 14 in which a vacuum atmosphere is formed. A substrate transport mechanism 15 is disposed inside the vacuum transport chamber 14. The vacuum transport chamber 14, for example, is formed as a rectangle with a long side in the front-to-back direction when viewed from above. Multiple (e.g., three) vacuum processing devices 2 are connected to the opposing long sides of the four side walls of the vacuum transport chamber 14. Additionally, a loading interlock chamber 122, located within the feed-in / feed-out module 12, is connected to the short side wall of the four side walls of the vacuum transport chamber 14, located near the front. Gate valves G are disposed between the atmospheric pressure transport chamber 121 and the loading interlock chamber 122, between the loading interlock chamber 122 and the vacuum transport module 13, and between the vacuum transport module 13 and the vacuum processing devices 2. Gate valves G are used to open and close the feed-in / feed-out ports of the wafers W disposed in the interconnected modules.

[0031] The substrate transport mechanism 15 transports wafers W between the feed-in / feed-out module 12 and the vacuum processing apparatus 2 in a vacuum atmosphere. The substrate transport mechanism 15 includes a multi-jointed arm and a substrate holding section 16 for holding the wafers W. The vacuum processing apparatus 2 performs batch substrate processing on multiple (e.g., four) wafers W using a processing gas in a vacuum atmosphere. Therefore, the substrate holding section 16 of the substrate transport mechanism 15 is configured, for example, to hold four wafers W for batch delivery of four wafers W to the vacuum processing apparatus 2.

[0032] Specifically, the substrate transport mechanism 15 includes, for example, a base 151, a horizontally extending first arm 152, a horizontally extending second arm 153, and a substrate holding portion 16. The base of the first arm 152 is disposed on the base 151, and the first arm 152 rotates about a vertical axis of rotation on the base 151. The base of the second arm 153 is disposed on the top end of the first arm 152, and the second arm 153 rotates about a vertical axis of rotation on the top end of the first arm 152. The substrate holding portion 16 includes a first substrate holding portion 161, a second substrate holding portion 162, and a connecting portion 163. The first substrate holding portion 161 and the second substrate holding portion 162 are configured as two elongated scraper-shaped parts extending horizontally side by side. The connecting portion 163 extends horizontally in a manner orthogonal to the extending directions of the first substrate holding portion 161 and the second substrate holding portion 162, connecting the base ends of the first substrate holding portion 161 and the second substrate holding portion 162 to each other. The central portion of the connecting portion 163 in the longitudinal direction is located at the top end of the second arm 153, and the connecting portion 163 rotates about a vertical axis of rotation at the top end of the second arm 153. The first substrate holding portion 161 and the second substrate holding portion 162 will be described subsequently.

[0033] The vacuum processing system 1 includes a control unit 8. The control unit 8 is, for example, a computer including a processor, a storage unit, an input device, and a display device. The control unit 8 controls each part of the vacuum processing system 1. The control unit 8 can use the input device to input commands, allowing the operator to manage the vacuum processing system 1. Furthermore, the control unit 8 can visually display the operating status of the vacuum processing system 1 using the display device. In addition, the storage unit of the control unit 8 stores control programs and process data for various processes performed by the processor controlling the vacuum processing system 1. The processor of the control unit 8 executes the control programs and controls each part of the vacuum processing system 1 according to the process data, thereby enabling the vacuum processing system 1 to perform the desired substrate processing.

[0034] [Structure of the vacuum processing device]

[0035] Next, refer to Figures 2-4 This illustrates an example of applying vacuum processing device 2 to a film-forming apparatus, for example, to perform plasma CVD (Chemical Vapor Deposition) processing on wafer W. Figure 2 This is an exploded perspective view showing an example of the structure of the vacuum processing apparatus 2 according to the embodiment. Figure 3 This is a top view that schematically shows the internal structure of the vacuum processing apparatus 2 according to the embodiment.

[0036] Six vacuum processing units 2 are configured identically to each other, allowing for parallel processing of wafer W. Each vacuum processing unit 2 includes a rectangular processing container (vacuum container) 20 when viewed from above. The processing container 20 is configured to maintain a vacuum atmosphere inside. The processing container 20 is configured to close the opening of a container body 202 with a recessed opening on its upper surface using a top member 201. The processing container 20, for example, has sidewalls 203 surrounding it. One of the four sidewalls 203 is connected to the vacuum delivery chamber 14, extending along the front-rear direction (…). Figure 2 The arrangement in the Y′ direction forms two feed inlets and outlets 21. The feed inlets and outlets 21 are opened and closed by gate valves G.

[0037] like Figure 2 and Figure 3 As shown, inside the processing container 20, a first transport space T1 and a second transport space T2, extending horizontally from each inlet / outlet 21 and used for transporting the wafer W, are positioned adjacent to each other. Furthermore, within the processing container 20, between the first transport space T1 and the second transport space T2, along the extending direction (… Figure 2A middle wall portion 3 is provided in the X′ direction. Two processing spaces S1 and S2 are arranged along the extension direction in the first transport space T1, and two processing spaces S3 and S4 are arranged along the extension direction in the second transport space T2. Therefore, within the processing container 20, when viewed from the upper surface, a total of four processing spaces S1 to S4 are arranged in a 2×2 matrix. The horizontal direction mentioned here also includes the case where, due to manufacturing tolerances, etc., it is slightly tilted relative to the extension direction, within a range that does not cause contact between the devices during wafer W feeding and unloading operations.

[0038] Figure 4 This is a schematic cross-sectional view showing an example of the structure of the vacuum processing apparatus 2 according to the embodiment. Figure 4 The cross-section is equivalent to Figure 3 The cross-section along line A-A of the vacuum processing apparatus 2 shown. Four processing spaces S1 to S4 are configured identically and are respectively formed between the stage 22 on which the wafer W is placed and the gas supply unit 4 disposed opposite to the stage 22. In other words, within the processing container 20, a stage 22 and a gas supply unit 4 are respectively provided for each of the four processing spaces S1 to S4. Figure 4 The diagram shows the processing space S1 of the first transport space T1 and the processing space S4 of the second transport space T2. The following explanation will use processing space S1 as an example.

[0039] The mounting stage 22 also serves as a lower electrode, and is formed, for example, as a flat cylindrical shape made of metal or aluminum nitride (AlN) with embedded metal mesh electrodes. The mounting stage 22 is supported from below by a support member 23. The support member 23 is cylindrical, extends vertically downward, and passes through the bottom 27 of the processing container 20. The lower end of the support member 23 is located outside the processing container 20 and is connected to a rotary drive mechanism 600. The support member 23 rotates using the rotary drive mechanism 600. The mounting stage 22 is configured to rotate as the support member 23 rotates. Furthermore, an adjustment mechanism 700 for adjusting the position and tilt of the mounting stage 22 is provided at the lower end of the support member 23. The mounting stage 22 is configured to be able to move up and down between a processing position and a transition position using the adjustment mechanism 700 via the support member 23. Figure 4 The solid line depicts the stage 22 at the processing position, while the dashed lines represent the stages 22 at the junction positions. The processing position refers to the position where substrate processing (e.g., film deposition) is performed, and the junction position refers to the position where the wafer W is transferred between the wafer and substrate transport mechanism 15. The rotary drive mechanism 600 and the adjustment mechanism 700 are described subsequently.

[0040] A heater 24 is embedded in the mounting stage 22. The heater 24 heats each wafer W mounted on the mounting stage 22 to approximately 60°C to 600°C. In addition, the mounting stage 22 is connected to ground potential.

[0041] Furthermore, the mounting platform 22 is provided with a plurality of (e.g., three) pin-through holes 26a, and a lifting pin 26 is disposed inside each of these pin-through holes 26a. The pin-through holes 26a are provided in such a way that they extend from the mounting surface (upper surface) of the mounting platform 22 to the back surface (lower surface) relative to the mounting surface. The lifting pin 26 is inserted into the pin-through hole 26a in such a way that it can slide. The upper end of the lifting pin 26 is suspended on the mounting surface side of the pin-through hole 26a. That is, the upper end of the lifting pin 26 has a diameter larger than that of the pin-through hole 26a, and a recess is formed at the upper end of the pin-through hole 26a. The diameter and thickness of the recess are larger than the diameter and thickness of the upper end of the lifting pin 26, and the recess can accommodate the upper end of the lifting pin 26. Thus, the upper end of the lifting pin 26 is locked onto the mounting platform 22 and suspended on the mounting surface side of the pin-through hole 26a. In addition, the lower end of the lifting pin 26 protrudes from the back of the platform 22 toward the bottom 27 side of the processing container 20.

[0042] like Figure 4 As shown, with the platform 22 raised to the processing position, the upper end of the lifting pin 26 is housed in the recess on the mounting side of the pin through hole 26a. When the platform 22 is lowered from this position to the transfer position and the lifting pin 26 is raised using a lifting mechanism (not shown), the upper end of the lifting pin 26 protrudes from the mounting surface of the platform 22.

[0043] Here, the first substrate holding section 161 and the second substrate holding section 162 will be described. The first substrate holding section 161 is configured to hold the wafer W at positions corresponding to the arrangement positions of the processing spaces S1 and S2 within the first transport space T1 when the first substrate holding section 161 enters the first transport space T1. The positions corresponding to the arrangement positions of the processing spaces S1 and S2 within the first transport space T1 are positions set such that the wafer W is transferred to the two mounting stages 22 provided in the processing spaces S1 and S2 of the first transport space T1. The second substrate holding section 162 is configured to hold the wafer W at positions corresponding to the arrangement positions of the processing spaces S3 and S4 within the second transport space T2 when the second substrate holding section 162 enters the second transport space T2. The positions corresponding to the respective configuration positions of the processing spaces S3 and S4 within the second transport space T2 refer to the positions set in a manner that allow the wafer W to be handed over to the two mounting stages 22 set in the processing spaces S3 and S4 of the second transport space T2.

[0044] For example, the widths of the first substrate holding portion 161 and the second substrate holding portion 162 are each smaller than the diameter of the wafer W, and the first substrate holding portion 161 and the second substrate holding portion 162 each support the back side of the wafer W with a gap between them on the top end side and the base end side. For the wafer W supported on the top end side of the first substrate holding portion 161 and the second substrate holding portion 162, for example, its central portion is supported by the top ends of the first substrate holding portion 161 and the second substrate holding portion 162.

[0045] Thus, with the coordinated action of the substrate transport mechanism 15, the lifting pin 26, and the mounting stage 22, the substrate transport mechanism 15 and each mounting stage 22 are configured to simultaneously transfer, for example, four wafers W in batches.

[0046] The gas supply unit 4 is positioned above the mounting platform 22 on the top member 201 of the processing container 20 via a guide member 34 made of insulating material. The gas supply unit 4 functions as an upper electrode. The gas supply unit 4 includes: a cover 42; a spray plate 43 arranged opposite to the mounting surface of the mounting platform 22, forming a facing surface; and a gas flow chamber 44 formed between the cover 42 and the spray plate 43. A gas supply pipe 51 is connected to the cover 42, and the spray plate 43 has gas ejection holes 45 arranged longitudinally and transversely in the thickness direction, for example, so that the gas is sprayed toward the mounting platform 22 in a spray pattern.

[0047] Each gas supply unit 4 is connected to the gas supply system 50 via a gas supply pipe 51. The gas supply system 50 includes, for example, a supply source for the reaction gas (film-forming gas), purge gas, and cleaning gas used as processing gases, piping, valves V, flow adjustment units M, etc.

[0048] A high-frequency power supply 41 is connected to the spray plate 43 via a matching device 40. The spray plate 43 functions as an upper electrode opposite to the mounting stage 22. When high-frequency power is applied between the spray plate 43, which serves as the upper electrode, and the mounting stage 22, which serves as the lower electrode, the gas (the reaction gas in this example) supplied from the spray plate 43 to the processing space S1 can be plasmaized by capacitive coupling.

[0049] Next, the exhaust path and the confluence exhaust path formed in the intermediate wall portion 3 will be explained. For example... Figure 3 and Figure 4 As shown, the intermediate wall portion 3 has exhaust paths 31 respectively provided for the four processing spaces S1 to S4, and a merging exhaust path 32 formed by the convergence of these exhaust paths 31. The merging exhaust path 32 extends vertically within the intermediate wall portion 3. The intermediate wall portion 3 includes a wall body 311 provided on the side of the container body 202 and an exhaust path forming member 312 provided on the side of the top member 201. The exhaust paths 31 are provided inside the exhaust path forming member 312.

[0050] Furthermore, exhaust ports 33 are formed on the outer side of the intermediate wall portion 3, located in the processing spaces S1 to S4, for each processing space S1 to S4. Each exhaust path 31 is formed in the intermediate wall portion 3 to connect the exhaust port 33 and the confluence exhaust path 32. For example, each exhaust path 31 extends horizontally within the intermediate wall portion 3, then bends downwards and extends vertically to connect with the confluence exhaust path 32. For example, the cross-section of the exhaust path 31 is circular (see reference). Figure 3 The upstream end of the combined exhaust path 32 is connected to the downstream end of each exhaust path 31, and the upstream side of each exhaust path 31 serves as the exhaust port 33 opening on the outside of each processing space S1 to S4.

[0051] Exhaust guide members 34 are provided around each of the processing spaces S1 to S4, respectively. The guide member 34 is, for example, an annular structure provided in the area surrounding the platform 22 located at the processing position, spaced apart from the platform 22. The guide member 34 is configured to form an annular flow path 35 when viewed from above, and this flow path 35 is, for example, rectangular in longitudinal section. Figure 3 The diagram shows, in general terms, the processing spaces S1 to S4, the guide member 34, the exhaust path 31, and the confluence exhaust path 32.

[0052] like Figure 4 As shown, the guide member 34 is, for example, formed in a U-shape in longitudinal section, with the opening of the U facing downwards. The guide member 34 is embedded in a recess 204 formed on the side of the intermediate wall portion 3 and the side wall portion 203 of the container body 202, and the guide member 34 forms a flow path 35 between itself and the components constituting the intermediate wall portion 3 and the side wall portion 203.

[0053] The guide member 34, embedded in the recess 204, forms a slit-shaped slit exhaust port 36 that opens toward the processing spaces S1 to S4. Thus, slit exhaust ports 36 are formed circumferentially on the side periphery of each processing space S1 to S4. An exhaust port 33 is connected to the flow path 35, allowing the processing gas discharged from the slit exhaust port 36 to flow toward the exhaust port 33.

[0054] This refers to a group of two processing spaces S1 and S2 arranged along the extension direction of the first conveying space T1, and a group of two processing spaces S3 and S4 arranged along the extension direction of the second conveying space T2. For example... Figure 3 As shown, when viewed from the top surface, the groups of processing spaces S1-S2 and processing spaces S3-S4 are arranged in a 180° rotationally symmetrical manner around the confluence exhaust path 32.

[0055] Thus, the flow paths of the processed gas from each processing space S1 to S4 via the slit exhaust port 36, the flow path 35 of the guide member 34, the exhaust port 33, and the exhaust path 31 to the confluence exhaust path 32 are formed in a manner of 180° rotational symmetry around the confluence exhaust path 32. Furthermore, when considering only the flow paths of the processed gas, disregarding the positional relationships with the first conveying space T1, the second conveying space T2, and the intermediate wall 3, it can also be said that, when viewed from the upper surface side, these flow paths are formed in a manner of 90° rotational symmetry around the confluence exhaust path 32.

[0056] The combined exhaust path 32 is connected to the exhaust pipe 61 via a combined exhaust port 205 formed at the bottom 27 of the processing container 20. The exhaust pipe 61 is connected to the vacuum pump 62, which constitutes the vacuum exhaust mechanism, via a valve mechanism 7. For example, a vacuum pump 62 is provided for one processing container 20 (see reference). Figure 1 The exhaust pipes 61 on the downstream side of each vacuum pump 62 are merged and connected to, for example, a factory exhaust system.

[0057] The valve mechanism 7 is used to open and close the flow path of the processed gas formed in the exhaust pipe 61. The valve mechanism 7 has, for example, a housing 71 and an opening / closing part 72. A first opening 73 connected to the upstream exhaust pipe 61 is formed on the upper surface of the housing 71, and a second opening 74 connected to the downstream exhaust pipe 61 is formed on the side of the housing 71.

[0058] The opening / closing part 72 includes, for example, an opening / closing valve 721 formed to block the size of the first opening 73, and a lifting mechanism 722 provided outside the housing 71 and for raising and lowering the opening / closing valve 721 within the housing 71. The opening / closing valve 721 is configured to... Figure 4 The closed position indicated by the dotted line and Figure 4 The valve 721 can move freely between the open and closed positions, as indicated by the solid line. In the closed position, the valve 721 blocks the first opening 73. In the open position, the valve 721 retracts to a position lower than the first opening 73 and the second opening 74. When the valve 721 is in the closed position, the downstream end of the combined exhaust port 205 is closed, and exhaust from the processing container 20 stops. Conversely, when the valve 721 is in the open position, the downstream end of the combined exhaust port 205 is opened, allowing exhaust from the processing container 20.

[0059] Next, refer to Figure 2 and Figure 4The gas supply system is described using an example of a system employing two reactant gases. A gas supply pipe 51 is connected approximately to the center of the upper surface of each gas supply unit 4. The gas supply pipe 51 is connected to the first reactant gas supply source and the purge gas supply source 55 via a first common gas supply path 521 using a first gas supply pipe 511. Furthermore, the gas supply pipe 51 is connected to the second reactant gas supply source and the purge gas supply source 55 via a second common gas supply path 522 using a second gas supply pipe 512. Additionally, in… Figure 4 For convenience, the first common gas supply path 521 and the second common gas supply path 522 are collectively referred to as gas supply path 52. Furthermore, the first reaction gas supply source and the second reaction gas supply source are collectively referred to as reaction gas supply source 54. Additionally, the first gas supply pipe 511 and the second gas supply pipe 512 are collectively referred to as gas supply pipe 510. Valve V2 and flow adjustment unit M2 are used for supplying reaction gas, and valve V3 and flow adjustment unit M3 are used for supplying purging gas.

[0060] Additionally, the gas supply pipe 51 is connected to the clean gas supply source 53 via a clean gas supply path 532 and a remote plasma unit (RPU) 531. The clean gas supply path 532 branches into four systems downstream of the RPU 531, each connected to the gas supply pipe 51. A valve V1 and a flow adjustment unit M1 are provided upstream of the RPU 531 in the clean gas supply path 532. Furthermore, valves V11 to V14 are provided downstream of the RPU 531 for each branch pipe; during cleaning, the corresponding valves V11 to V14 are opened. Moreover, in... Figure 4 For simplicity, only valves V11 and V14 are shown in the diagram. When illustrating the example of forming an insulating oxide film (SiO2) using CVD, for example, tetraethoxysilane (TEOS) and oxygen (O2) are used as the reactant gases, and inert gases such as nitrogen (N2) are used as the purge gas. When using TEOS and O2 as the reactant gases, for example, TEOS is supplied from the first reactant gas supply source 541, and O2 is supplied from the second reactant gas supply source 542. Additionally, nitrogen trifluoride (NF3) is used as the purge gas.

[0061] From the perspective of the processed gas distributed via the shared gas supply path 52, the processed gas paths from each gas supply pipe 51 to the gas supply section 4 are formed with mutually consistent conductivity. For example, Figure 2As shown, the downstream side of the first common gas supply path 521 branches into two systems, and the branched gas supply path further branches into two systems, forming a first gas supply pipe 511 in a branched shape. The first gas supply pipe 511 is connected to the gas supply pipe 51 downstream of the valves V11 to V14 for cleaning gas. Furthermore, the downstream side of the second common gas supply path 522 branches into two systems, and the branched gas supply path further branches into two systems, forming a second gas supply pipe 512 in a branched shape. The second gas supply pipe 512 is connected to the gas supply pipe 51 downstream of the valves V11 to V14 for cleaning gas.

[0062] The length and inner diameter of each of the first gas supply pipes 511 from its upstream end (the end connected to the first common gas supply path 521) to its downstream end (the end connected to the gas supply section 4 or the gas supply pipe 51) are formed to be consistent among the first gas supply pipes 511. Furthermore, the length and inner diameter of each of the second gas supply pipes 512 from its upstream end (the end connected to the second common gas supply path 522) to its downstream end are formed to be consistent among the second gas supply pipes 512. In this way, from the perspective of the processed gas distributed from the first common gas supply path 521, each processed gas path, from the first gas supply pipe 511, gas supply section 4, processing spaces S1 to S4, and exhaust path 31 to the confluence exhaust path 32, is formed to have the same electrical conductivity. Furthermore, from the perspective of the processing gas distributed from the second common gas supply path 522, the processing gas paths that pass through the second gas supply pipe 512, the gas supply section 4, the processing spaces S1 to S4, and the exhaust path 31 to the confluence exhaust path 32 are formed with the same electrical conductivity.

[0063] The vacuum processing apparatus 2 is connected to the control unit 8 of the vacuum processing system 1. The control unit 8 controls each part of the vacuum processing apparatus 2. The control unit 8 can input commands using an input device, allowing the operator to manage the vacuum processing apparatus 2. Furthermore, the control unit 8 can visually display the operating status of the vacuum processing apparatus 2 using a display device. In addition, the storage unit of the control unit 8 stores control programs and process data for various processes performed by the vacuum processing apparatus 2 using a processor. The processor of the control unit 8 executes the control programs and controls each part of the vacuum processing apparatus 2 according to the process data, thereby enabling the vacuum processing apparatus 2 to perform the desired processes. For example, the control unit 8 controls each part of the vacuum processing apparatus 2 to perform substrate processing such as etching and film deposition on a substrate fed into the vacuum processing apparatus 2.

[0064] [Structure of the rotary drive mechanism and adjustment mechanism]

[0065] Figure 5This is a diagram illustrating an example of the structure of the rotary drive mechanism 600 and the adjustment mechanism 700 according to the embodiment. A hole 27a is formed at the bottom 27 of the processing container 20, corresponding to the position of the support platform 22. A support member 23 supporting the support platform 22 from below is inserted into the hole 27a. Furthermore, the rotary drive mechanism 600 is connected to the lower end 23a of the support member 23, located outside the processing container 20.

[0066] The rotary drive mechanism 600 has a rotary shaft 610, a motor 620, and a vacuum seal 630.

[0067] The rotating shaft 610 is configured to connect to the lower end 23a of the support member 23 and be able to rotate integrally with the support member 23. A slip ring 621 is provided at the lower end of the rotating shaft 610. The slip ring 621 has electrodes and is electrically connected to various wiring for supplying power to components around the mounting stage 22. For example, the slip ring 621 is electrically connected to wiring for supplying power to the heater 24 embedded in the mounting stage 22. Additionally, for example, if an electrostatic chuck for electrostatically adsorbing the wafer W is provided on the mounting stage 22, the slip ring 621 is electrically connected to wiring for applying a DC voltage to the electrostatic chuck.

[0068] Motor 620 is connected to rotating shaft 610, causing rotating shaft 610 to rotate. When rotating shaft 610 rotates, platform 22 rotates with the aid of support member 23. When rotating shaft 610 rotates, slip ring 621 also rotates with rotating shaft 610, but still maintains electrical connection between slip ring 621 and various wiring for supplying power to components around platform 22.

[0069] The vacuum seal 630, for example a magnetic fluid seal, is disposed around the rotating shaft 610 and can maintain the rotation of the rotating shaft 610 while sealing the rotating shaft 610 in an airtight manner.

[0070] In addition, an adjustment mechanism 700 is engaged at the lower end 23a of the support member 23 by means of a vacuum seal 630.

[0071] The adjustment mechanism 700 has a base component 710, a plurality of (e.g., 6) actuators 720, an absorption mechanism 730, and a bellows 740.

[0072] The base member 710 is configured to engage with the lower end 23a of the support member 23 located outside the processing container 20 via a vacuum seal 630, enabling it to move integrally with the loading stage 22. For example, a hole 711 with a diameter larger than the diameter of the lower end 23a of the support member 23 is formed in the base member 710. The support member 23 passes through the hole 711, and its lower end 23a is connected to the rotating shaft 610. The vacuum seal 630 is provided around the rotating shaft 610 connected to the lower end 23a of the support member 23, and the base member 710 is fixed to the upper surface of the vacuum seal 630. Thus, the base member 710 is connected to the loading stage 22 via the vacuum seal 630, the rotating shaft 610, and the support member 23, and the base member 710 can move integrally with the loading stage 22.

[0073] Multiple actuators 720 are arranged alternately between the bottom 27 of the processing container 20 and the base member 710, allowing the base member 710 to move relative to the bottom 27 of the processing container 20, thereby adjusting the position and tilt of the platform 22. The actuators 720 are telescopic, rotatably and slidably connected to the base member 710 via universal joints, and rotatably and slidably connected to the bottom 27 of the processing container 20 via universal joints. The base member 710 and the multiple actuators 720 form a parallel linkage mechanism, which allows the base member 710 to move relative to, for example... Figure 5 The directions of the X′ axis, Y′ axis, and Z′ axis, as well as the directions of rotation about the X′ axis, the Y′ axis, and the Z′ axis, are shown. The coordinate system of the parallel linkage mechanism formed by the base member 710 and the plurality of actuators 720 is pre-adjusted to be consistent with the coordinate system of the processing container 20. The bottom 27 of the processing container and the base member 710 are connected by the parallel linkage mechanism, so that the plurality of actuators 720 can move the base member 710 relative to the bottom 27 of the processing container 20. As a result, the position and tilt of the stage 22 can be adjusted. For example, the plurality of actuators 720 move the base member 710 in a direction orthogonal to the outer wall surface of the bottom 27 of the processing container 20 (e.g., ...). Figure 5 The position of the stage 22 is adjusted by moving the base member 710 in the direction along the outer wall surface of the bottom 27 of the processing container 20 (e.g., along the Z′ axis). Additionally, for example, multiple actuators 720 adjust the position of the stage 22 by moving the base member 710 in the direction along the outer wall surface of the bottom 27 of the processing container 20 (e.g., along the Z′ axis). Figure 5 The position of the stage 22 is adjusted by moving it along the X′ and Y′ axes. Additionally, for example, multiple actuators 720 adjust the position of the stage 22 by moving the base member 710 relative to the outer wall of the bottom 27 of the processing container 20 in a predetermined direction (e.g., ...). Figure 5 The direction of rotation about the X′ axis and the direction of rotation about the Y′ axis are tilted, thereby adjusting the tilt of the stage 22.

[0074] Furthermore, by detecting the position and tilt of the base member 710 using various detection components, the position and tilt of the stage 22, which is adjusted using multiple actuators 720, can be determined. Examples of detection components include linear encoders, gyroscope sensors, triaxial accelerometers, and laser trackers.

[0075] Furthermore, in the vacuum processing apparatus 2, when the pressure inside the processing container 20 is switched from atmospheric pressure to vacuum, the processing container 20 will deform under the influence of the pressure difference. Additionally, the heat from the substrate processing performed within the processing container 20 will transfer and cause temperature changes, resulting in deformation of the processing container 20 as well. If the processing container 20 deforms, the stress generated by the deformation of the processing container 20 will be transmitted to the mounting stage 22, causing changes in the position and tilt of the mounting stage 22.

[0076] Therefore, in the vacuum processing apparatus 2 of this embodiment, a plurality of actuators 720 are provided between the bottom 27 of the processing container 20 and the substrate member 710, which is movable integrally with the mounting stage 22. The plurality of actuators 720 adjust the position and tilt of the mounting stage 22 by moving the substrate member 710 relative to the bottom 27. Thus, even if the position and tilt of the mounting stage 22 change due to deformation of the processing container 20, the position and tilt of the mounting stage 22 can be adjusted back to their original positions and tilt. As a result, the vacuum processing apparatus 2 of this embodiment can improve the deviation of the position and tilt of the mounting stage 22 caused by deformation of the processing container 20, thereby improving the in-plane uniformity of substrate processing such as film deposition.

[0077] An absorption mechanism 730 is provided at the bottom 27 of the processing container 20 to absorb deformation of the bottom of the processing container 20. The absorption mechanism 730 has a hole 731 that communicates with the interior of the processing container 20 through a hole 27a at the bottom 27. The multiple actuators 720 are not directly connected to the bottom 27 of the processing container 20, but are connected to the absorption mechanism 730. Therefore, even if deformation occurs at the bottom 27 of the processing container 20, the stress generated by the deformation is absorbed by the absorption mechanism 730 and not transmitted to the multiple actuators 720, thus suppressing a decrease in the adjustment accuracy of the position and tilt of the stage 22. Details of the absorption mechanism 730 will be described later.

[0078] The bellows 740 is arranged to surround the support member 23. The upper end of the bellows 740 passes through a hole 731 formed in the absorption mechanism 730 and connects to the bottom 27 of the processing container 20, while the lower end of the bellows 740 connects to the base member. Thus, the bellows 740 hermetically seals the space between the bottom 27 of the processing container 20 and the base member 710. The bellows 740 is configured to extend and retract according to the movement of the base member 710. For example, when the base member 710 is in a direction orthogonal to the outer wall surface of the bottom 27 of the processing container 20 (e.g., ...), Figure 5 When the bellows 740 moves along the Z′ axis direction, the bellows 740 extends and retracts in the Z′ axis direction. Additionally, for example, when the base member 710 moves along the outer wall surface of the bottom 27 of the processing container 20 (e.g., along the Z′ axis direction), the bellows 740 extends and retracts in the Z′ axis direction. Figure 5 When the bellows 740 moves in the X′ and Y′ directions, it extends and retracts in the X′ and Y′ directions. Additionally, for example, when the base member 710 moves relative to the outer wall surface of the bottom 27 of the processing container 20 in a predetermined direction (e.g., ...), Figure 5 When the bellows 740 moves in the direction of rotation about the X′ axis and the direction of rotation about the Y′ axis, it extends and retracts in the direction of rotation about the X′ axis and the direction of rotation about the Y′ axis. The vacuum processing device 2 is configured such that even when the base member 710 moves, due to the extension and retraction of the bellows 740, atmosphere will not flow into the processing container 20 through the space between the bottom 27 of the processing container 20 and the base member 710, the hole 731 and the hole 27a.

[0079] Here, refer to Figure 6 Here is an example illustrating the structure of the absorption mechanism 730. Figure 6 It means Figure 5 The diagram shows an example of the structure of the absorption mechanism 730. The absorption mechanism 730 has a plate member 732 and a rod member 733.

[0080] The plate member 732 is formed in the shape of a circular plate and is disposed below the bottom 27 of the processing container 20. From the viewpoint of cutting off the transmission of heat and vibration from the processing container 20, the plate member 732 is disposed in a manner that is spaced apart from the outer wall surface of the bottom 27 of the processing container 20.

[0081] One end of the rod member 733 is rotatably and slidably connected to the bottom 27 of the processing container 20, and the other end of the rod member 733 is rotatably and slidably connected to the plate member 732. Specifically, a recess 27b is formed on the outer wall surface of the bottom 27 of the processing container 20, and a spherical bearing 27c capable of free rotation and sliding is installed in the recess 27b. One end 733a of the rod member 733 is connected to the bottom 27 of the processing container 20 in a rotatable and slidable manner by connecting to the spherical bearing 27c. Furthermore, a recess 732a is formed on the upper surface of the plate member 732 at a position corresponding to the recess 27b, and a spherical bearing 732b capable of free rotation and sliding is installed in the recess 732a. The other end 733b of the rod member 733 is connected to the plate member 732 in a rotatable and slidable manner by connecting to the spherical bearing 732b. The rod member 733 rotates in a direction corresponding to the deformation of the bottom 27 of the processing container 20, thereby suppressing the transmission of deformation to the plate member 732. For example, at the bottom 27 of the processing container 20... Figure 6 When the arrow-shaped deformation occurs, the rod member 733 is subjected to stress from the deformation of the bottom 27, but the rod member 733, together with the bottom 27, deforms towards... Figure 6 The direction of the arrow is rotated, thereby suppressing the transmission of deformation to the plate member 732. Multiple actuators 720 are connected to the plate member 732. As a result, the stress generated by the deformation of the bottom 27 of the processing container 20 is not transmitted to the multiple actuators 720 via the plate member 732, and the reduction in the adjustment accuracy of the position and tilt of the platform 22 can be suppressed.

[0082] Furthermore, the rod members 733 are disposed at multiple positions in the circumferential direction of the plate member 732. For example, three rod members 733 are provided at equal intervals at multiple positions inside the edge of the plate member 732 along the circumferential direction of the plate member 732. Alternatively, four or more rod members 733 may be provided at equal intervals along the circumferential direction of the plate member 732.

[0083] [Specific example of the control method flow for a vacuum processing device]

[0084] Next, a specific example of the flow of the control method of the vacuum processing apparatus 2 according to the embodiment will be described. Figure 7 This is a flowchart of Example 1 illustrating the flow of the control method of the vacuum processing apparatus 2 in an embodiment.

[0085] The control unit 8 controls the substrate transport mechanism 15 to transport the wafer W toward the vacuum processing apparatus 2 (step S101).

[0086] The control unit 8 calculates the deviation of the wafer W during transport by the substrate transport mechanism 15 as a correction amount for the position of the wafer W (step S102). For example, the deviation between the wafer W and the target position transported by the substrate transport mechanism 15 is detected by a position detection sensor installed at any position on the transport path of the wafer W, thereby performing the calculation of the correction amount for the position of the wafer W. The position detection sensor is provided, for example, in the vacuum transport chamber 14 in which the substrate transport mechanism 15 is disposed. Alternatively, the position detection sensor may also be provided at the feed outlet 21 of the vacuum processing apparatus 2. Furthermore, the target position refers to the placement position of the wafer W on the stage 22, for example, the position where the center of the stage 22 is aligned with the center of the wafer W.

[0087] The control unit 8 controls multiple actuators 720 to move the base member 710 from a predetermined reference position by the correction amount calculated in step S102 (step S103). The reference position is, for example, the position where the center of the stage 22 is aligned with the center of the processing container 20. Along with the movement of the base member 710, the stage 22 also moves from the reference position by the correction amount.

[0088] When the substrate transport mechanism 15 arrives at the vacuum processing apparatus 2, the control unit 8 controls the substrate transport mechanism 15 to transport the wafer W above the target position within the processing container 20. Then, the control unit 8 performs a transfer of the wafer W between the stage 22 and the substrate transport mechanism 15 (step S104). In this stage, the center of the stage 22 is aligned with the center of the wafer W. Furthermore, the wafer W transfer in step S104 can utilize the method described later. Figure 8 This can be achieved in this way.

[0089] The control unit 8 controls multiple actuators 720 to move the substrate member 710 toward a reference position (step S105). Along with the movement of the substrate member 710, the stage 22 also moves toward the reference position. During this stage, the center of the stage 22, the center of the wafer W, and the center of the processing container 20 are aligned.

[0090] Thus, in the vacuum processing apparatus 2, instead of moving the substrate transport mechanism 15 by a correction amount, the substrate member 710 and the stage 22 are moved together by a correction amount to perform the wafer W transfer. Therefore, the transport load of the substrate transport mechanism 15 can be reduced. As a result, the overall productivity of the vacuum processing system 1 can be improved.

[0091] In addition, Figure 7In this process, steps S103 to S105 are performed in parallel in the four processing spaces S1 to S4 within the processing container 20. Therefore, if the substrate transport mechanism 15 transports four wafers W in batches to the four processing spaces S1 to S4 within the processing container 20, batch transfer of the wafers W can be achieved between the stage 22 and the substrate transport mechanism 15 (step S104). As a result, the overall productivity of the vacuum processing system 1 can be further improved.

[0092] Figure 8 This is a flowchart of Example 2 illustrating the flow of the control method of the vacuum processing apparatus 2 according to the embodiment. Figure 8 The control method shown is, for example, applicable to Figure 7 The wafer W is handed over in step S104. Furthermore, in the initial stage, the stage 22 is located in the processing position.

[0093] The control unit 8 controls multiple actuators 720 to cause the base member 710 and the mounting stage 22 to move downward together (i.e., Figure 5 The stage 22 moves in the negative direction of the Z′ axis (step S201). This initiates the descent of the stage 22.

[0094] For the control unit 8, as the platform 22 moves downward, the lower end of the lifting pin 26 abuts against the bottom 27 of the processing container 20, thereby causing the upper end of the lifting pin 26 to protrude from the mounting surface of the platform 22 (step S202). In this stage, the platform 22 is in a state where it has descended from the processing position to the handover position.

[0095] The control unit 8 controls multiple actuators 720 to cause the base member 710 and the mounting stage 22 to move upward together (i.e., Figure 5 The platform moves in the positive direction of the Z′ axis (step S203). Thus, the lifting of the platform 22 begins.

[0096] For the control unit 8, as the platform 22 moves upward, the lower end of the lifting pin 26 separates from the bottom 27 of the processing container 20, thereby storing the upper end of the lifting pin 26 in the mounting surface side of the pin through hole 26a (step S204). In this stage, the platform 22 is raised to the processing position.

[0097] Thus, in the vacuum processing apparatus 2, the protrusion and retraction of the lifting pin 26 can be achieved by raising and lowering the substrate component 710. Therefore, the lifting pin drive mechanism for driving the lifting pin 26 can be omitted, reducing the number of components within the processing container 20. Here, there is a case where the wafer W is processed by generating plasma within the processing container 20. In this case, the components within the processing container 20 are consumed by the plasma, and the particles generated by the consumed components may degrade the processing characteristics of the wafer W. In contrast, in the vacuum processing apparatus 2, the number of components within the processing container 20 can be reduced by eliminating the lifting pin drive mechanism, thus reducing the risk of particle generation. Furthermore, instead of providing a separate lifting mechanism for the stage 22, the adjustment mechanism 700 can be used to raise and lower the stage 22.

[0098] Figure 9 This is a flowchart of Example 3 illustrating the control method of the vacuum processing apparatus 2 according to the embodiment. Furthermore, in the following description, a film thickness sensor is arranged around the spray plate 43. The film thickness sensor is configured to detect the film thickness of the wafer W within a predetermined detection range in a non-contact manner.

[0099] The control unit 8 controls multiple actuators 720 to move the substrate member 710 until the wafer W placed on the mounting stage 22 moves into the detection range of the film thickness sensor (step S301). For example, the control unit 8 controls multiple actuators 720 to tilt the substrate member 710 until the wafer W placed on the mounting stage 22 moves into the detection range of the film thickness sensor.

[0100] Thus, in the vacuum processing apparatus 2, the wafer W placed on the stage 22 can be moved into the detection range of the film thickness sensor. Therefore, even when the film thickness sensor is positioned around the spray plate 43 opposite to the stage 22, the vacuum processing apparatus 2 can perform film thickness detection in real time during the substrate processing.

[0101] Figure 10 This is a flowchart of Example 4 illustrating the control method of the vacuum processing apparatus 2 in an embodiment. Figure 10 In the control method shown, a distance measuring board is used, which is capable of measuring the distance (hereinafter appropriately referred to as "gap") between the mounting platform 22 and the spray plate 43 at multiple positions within the mounting surface of the mounting platform 22. The distance measuring board has a wireless communication function that transmits the gaps measured at the multiple positions within the mounting surface of the mounting platform 22 as measurement results to the control unit 8.

[0102] The control unit 8 places the distance measuring substrate on the mounting stage 22 (step S401). The control unit 8 commands the distance measuring substrate to measure the gap. The distance measuring substrate sends the gaps measured at multiple positions along the circumference of the mounting stage 22 as measurement results to the control unit 8.

[0103] Based on the measurement results from the distance measuring substrate, the control unit 8 controls multiple actuators 720 to move the substrate member 710 to a position within a specified range at multiple locations on the mounting surface of the mounting stage 22. (Step S402).

[0104] Thus, in the vacuum processing apparatus 2, the gap can be uniformized at multiple locations within the mounting surface of the stage 22 without opening the processing container 20. As a result, the vacuum processing apparatus 2 can improve the in-plane uniformity of substrate processing performed on the wafer W while maintaining the vacuum state of the processing container 20.

[0105] Figure 11 This is a flowchart of Example 5 illustrating the control method of the vacuum processing apparatus 2 in an embodiment.

[0106] The control unit 8 acquires measurement data obtained by measuring each substrate process performed within the processing container 20, representing the position and tilt of the stage 22 corresponding to the state of the wafer W that meets specified conditions (step S501). For example, the control unit 8 acquires the measurement data by reading it from its storage unit. The state of the wafer W, for example, refers to a value representing the quality of the film formed on the wafer W using substrate processing. Furthermore, if the measurement data is stored in another device, the control unit 8 can also acquire the measurement data from another device via a network. Alternatively, the control unit 8 can also acquire the measurement data by generating it using machine learning, which is based on the position and tilt of the stage 22 corresponding to the state of the wafer W for each substrate process.

[0107] The control unit 8 performs substrate processing within the processing container 20 (step S502).

[0108] The control unit 8 determines whether the switching time for the ongoing substrate processing has arrived (step S503). If the switching time has not arrived (step S503: No), the control unit 8 continues the ongoing substrate processing.

[0109] Furthermore, if the switching time has arrived (step S503: Yes), the control unit 8 determines whether all substrate processing has been completed (step S404). If not all substrate processing has been completed (step S504: No), the control unit 8 controls multiple actuators 720 based on the measurement data obtained in step S501 (step S505). That is, the control unit 8 determines the position and tilt of the stage 22 corresponding to the next substrate processing as the switching target by referring to the measurement data. Then, the control unit 8 controls the multiple actuators 720 to move the substrate member 710 such that the position and tilt of the stage 22 are the determined position and tilt. After the substrate member 710 has been moved, the control unit 8 returns the processing to step S502 and performs the next substrate processing as the switching target within the processing container 20.

[0110] In addition, if all substrate processing has been completed (step S504: Yes), the control unit 8 ends the processing.

[0111] In this way, the vacuum processing apparatus 2 can dynamically adjust the position and tilt of the stage 22 for each substrate processing. As a result, the vacuum processing apparatus 2 can obtain the optimal processing results for each substrate processing when performing substrate processing continuously in sequence.

[0112] (Effects of the implementation method)

[0113] As described above, the vacuum processing apparatus 2 of this embodiment includes a processing container 20, a stage 22, a support member 23, a substrate member 710, and a plurality of actuators 720. The processing container 20 is configured to maintain a vacuum atmosphere inside. The stage 22 is disposed within the processing container 20 and is used to hold a wafer W (substrate). The support member 23 passes through a hole in the bottom 27 of the processing container 20 and supports the stage 22 from below. The substrate member 710 is configured to engage with the end of the support member 23 located outside the processing container 20 and be movable integrally with the stage 22. A plurality of actuators 720 are arranged alternately between the bottom 27 of the processing container 20 and the substrate member 710, and these actuators 720 move the substrate member 710 relative to the bottom 27 of the processing container 20, thereby adjusting the position and tilt of the stage 22. Thus, the vacuum processing apparatus 2 can improve deviations in the position and tilt of the stage 22 caused by deformation of the processing container 20.

[0114] Furthermore, the base member 710 and the plurality of actuators 720 form a parallel linkage mechanism that enables the base member 710 to move in the directions of the plurality of axes and in the direction of rotation about each axis. The base member 710 and the plurality of actuators 720 are connected to the bottom 27 of the processing container 20 and the base member 710 by means of this parallel linkage mechanism. As a result, the vacuum processing apparatus 2 uses the action of the parallel linkage mechanism to move the base member 710 relative to the bottom 27 of the processing container 20, thereby improving the deviation of the position and tilt of the stage 22.

[0115] Furthermore, the multiple actuators 720 adjust the position of the stage 22 by moving the base member 710 in a direction orthogonal to the outer wall surface of the bottom 27 of the processing container 20. As a result, the vacuum processing apparatus 2 is able to improve the deviation of the position of the stage 22 in the direction orthogonal to the outer wall surface of the bottom 27 of the processing container 20.

[0116] Furthermore, the multiple actuators 720 adjust the position of the stage 22 by moving the base member 710 in a direction along the outer wall surface of the bottom 27 of the processing container 20. As a result, the vacuum processing apparatus 2 is able to improve the deviation of the position of the stage 22 in the direction along the outer wall surface of the bottom 27 of the processing container 20.

[0117] Furthermore, the multiple actuators 720 adjust the tilt of the stage 22 by tilting the base member 710 relative to the outer wall surface of the bottom 27 of the processing container 20. As a result, the vacuum processing apparatus 2 is able to improve the deviation of the tilt of the stage 22 relative to the bottom 27 of the processing container 20.

[0118] In addition, the vacuum processing apparatus 2 also has a bellows 740 (expansion member), which is disposed around the support member 23 and airtightly seals the space between the bottom 27 of the processing container 20 and the base member 710. The bellows 740 can expand and contract according to the movement of the base member 710. Thus, even if the base member 710 moves, the vacuum processing apparatus 2 can prevent atmospheric air from flowing into the processing container 20.

[0119] In addition, the vacuum processing apparatus 2 also has an absorption mechanism 730 that absorbs the deformation of the bottom 27 of the processing container 20. Multiple actuators are connected to the absorption mechanism 730. Thus, the stress generated by the deformation of the bottom 27 of the processing container 20 is absorbed by the absorption mechanism 730 and not transmitted to the multiple actuators 720. Therefore, the vacuum processing apparatus 2 can suppress the reduction in the adjustment accuracy of the position and tilt of the stage 22.

[0120] Furthermore, the absorption mechanism 730 includes a plate member 732 and a rod member 733. One end of the rod member 733 is rotatably and slidably connected to the bottom 27 of the processing container 20, and the other end of the rod member 733 is rotatably and slidably connected to the plate member 732. By rotating in a direction corresponding to the deformation of the bottom 27 of the processing container 20, the rod member 733 suppresses the transmission of deformation to the plate member 732. A plurality of actuators 720 are connected to the plate member 732. As a result, the stress generated by the deformation of the bottom 27 of the processing container 20 is absorbed by the plate member 732 and not transmitted to the plurality of actuators 720. Therefore, the vacuum processing apparatus 2 can suppress the reduction of the adjustment accuracy of the position and tilt of the stage 22.

[0121] Furthermore, the plate member 732 is arranged with a gap between it and the outer wall surface of the bottom 27 of the processing container 20. As a result, the vacuum processing device 2 can cut off the transmission of heat and vibration from the processing container 20 to the plate member 732.

[0122] Furthermore, the control method of the vacuum processing apparatus 2 in this embodiment includes the following steps: calculating the deviation of the wafer W (substrate) during transport by the substrate transport mechanism 15 (transport mechanism) as a correction amount for the position of the wafer W; controlling a plurality of actuators 720 to move the substrate member 710 from a predetermined reference position by the correction amount; performing a transfer of the wafer W between the substrate transport mechanism 15 and the stage 22 that moves along with the substrate member 710; and after the transfer of the wafer W, controlling the plurality of actuators 720 to move the substrate member 710 towards the reference position. Thus, the vacuum processing apparatus 2 can improve the overall productivity of the vacuum processing system 1.

[0123] Additionally, a pin-through hole 26a is formed in the mounting platform 22, which penetrates the mounting surface of the mounting platform 22 and the back surface opposite to the mounting surface. The vacuum processing apparatus 2 also has a lifting pin 26, which is slidably inserted into the pin-through hole 26a. The upper end of the lifting pin 26 is suspended from the side of the pin-through hole 26a facing the mounting surface of the mounting platform 22, and the lower end of the lifting pin 26 protrudes from the back surface of the mounting platform 22 toward the bottom 27 side of the processing container 20. The control method of the vacuum processing apparatus 2 in this embodiment may also include the following steps: controlling multiple actuators 720 to move the substrate member 710 and the stage 22 downward together; causing the lower end of the lifting pin 26 to abut against the bottom 27 of the processing container 20 as the stage 22 moves downward, thereby causing the upper end of the lifting pin 26 to protrude from the mounting surface of the stage 22; controlling multiple actuators 720 to move the substrate member 710 and the stage 22 upward together; and causing the lower end of the lifting pin 26 to separate from the bottom 27 of the processing container 20 as the stage 22 moves upward, thereby storing the upper end of the lifting pin 26 in the pin through hole 26a on the mounting surface of the stage 22. Thus, the vacuum processing apparatus 2 can reduce the number of components within the processing container 20 by reducing the lifting pin drive mechanism, thereby reducing the risk of particulate generation.

[0124] In addition, the vacuum processing apparatus 2 also includes: a spray plate 43 (upper electrode) disposed within the processing container 20 opposite to the stage 22; and a film thickness sensor disposed around the spray plate 43, capable of non-contactly detecting the film thickness of the wafer W within a predetermined detection range. The control method of the vacuum processing apparatus 2 in this embodiment may further include the following steps: controlling a plurality of actuators 720 to move the substrate member 710 until the wafer W placed on the stage 22 moves into the detection range of the film thickness sensor. Thus, even when the film thickness sensor is disposed around the spray plate 43 opposite to the stage 22, the vacuum processing apparatus 2 can perform film thickness detection in real time during substrate processing.

[0125] Furthermore, the control method of the vacuum processing apparatus 2 in this embodiment includes the following steps: placing a distance measuring substrate on the stage 22, which is capable of measuring the distance between the stage 22 and the spray plate 43 (upper electrode) at multiple locations within the mounting surface of the stage 22; and controlling multiple actuators 720 based on the measurement results from the distance measuring substrate to move the substrate member 710 to a position within a specified range at multiple locations within the mounting surface of the stage 22. Thus, the vacuum processing apparatus 2 can maintain the vacuum state of the processing container 20 while improving the in-plane uniformity of the substrate processing performed on the wafer W.

[0126] Furthermore, the control method of the vacuum processing apparatus 2 in this embodiment includes the following steps: acquiring measurement data, which is obtained by measuring each substrate processing performed within the processing container 20, indicating the position and tilt of the stage 22 corresponding to the state of the wafer W (substrate) that meets specified conditions; sequentially performing substrate processing within the processing container 20; and controlling multiple actuators 720 based on the measurement data when the switching time for each substrate processing arrives. Thus, when substrate processing is performed sequentially and continuously, the vacuum processing apparatus 2 can obtain optimal processing results for each substrate processing.

[0127] The embodiments have been described above, but it should be considered that the embodiments disclosed herein are illustrative in all respects and are not restrictive. The above embodiments may also be omitted, substituted, or modified in various forms without departing from the scope of the claims and their spirit.

[0128] For example, in the above embodiment, the vacuum processing apparatus 2 is described as an example of an apparatus for performing plasma CVD processing as a substrate processing, but the disclosed technology can also be applied to any apparatus for performing other substrate processing such as plasma etching.

[0129] Furthermore, in the above embodiment, multiple actuators 720 are connected to the base member 710 in a rotatable and slidable manner via universal joints, and multiple actuators 720 are also connected to the bottom 27 side of the processing container 20 (i.e.,...) in a rotatable and slidable manner via universal joints. Figure 5 The example described is the connection of the absorption mechanism 730. However, the disclosed technology is not limited to this. The absorption mechanism 730 may be omitted, and one end of the actuator 720 may be connected to the bottom 27 of the processing container 20 in a rotatable and slidable manner via a universal joint. Alternatively, the base member 710 may be omitted, and the other end of the actuator 720 may be partially connected to the vacuum seal 630 in a rotatable and slidable manner via a universal joint. In this case, the vacuum seal 630 functions as a base member.

Claims

1. A control method for a vacuum processing apparatus, the vacuum processing apparatus comprising: A processing container that can maintain a vacuum atmosphere inside it; Multiple processing spaces are disposed within the processing container; A mounting stage, which is disposed in each of the plurality of processing spaces, is used to mount a substrate; A support member that supports the platform from below through a hole in the bottom of the processing container; A base component engages with the end of the support component located outside the processing container, and the base component is movable integrally with the platform; as well as A plurality of actuators are arranged between the bottom of the processing container and the base member, the actuators causing relative movement of the base member with respect to the bottom of the processing container, thereby adjusting the position and tilt of the mounting stage. The control method for this vacuum processing device includes the following steps: The deviation of the substrate during transport by the conveying mechanism is calculated as the correction amount for the position of the substrate; The plurality of actuators are controlled to move the base component from a predetermined reference position by the correction amount; The substrate is transferred between the conveying mechanism and the mounting platform, which moves together with the base component; as well as After the substrate is handed over, the plurality of actuators are controlled to move the base component toward the reference position.

2. The control method according to claim 1, wherein, The position correction amount of the substrate is calculated by detecting the deviation between the substrate and the target position transported by the substrate transport mechanism using a position detection sensor set at any position on the transport path of the substrate.

3. The control method according to claim 2, wherein, The target position is the position where the center of the mounting stage is aligned with the center of the substrate.

4. The control method according to any one of claims 1 to 3, wherein, The reference position is the position where the center of the platform in the plurality of processing spaces is aligned with the center of the processing container.

5. A control method for a vacuum processing apparatus, the vacuum processing apparatus comprising: A processing container that can maintain a vacuum atmosphere inside it; A mounting stage, disposed within the processing container, is used to mount a substrate; A support member that supports the platform from below through a hole in the bottom of the processing container; A base component engages with the end of the support component located outside the processing container, and the base component is movable integrally with the platform; as well as A plurality of actuators are arranged between the bottom of the processing container and the base member, the actuators causing relative movement of the base member with respect to the bottom of the processing container, thereby adjusting the position and tilt of the mounting stage. The vacuum processing apparatus also has an upper electrode, which is disposed inside the processing container opposite to the stage. The control method for this vacuum processing device includes the following steps: A distance measuring substrate is disposed on the mounting platform, which is capable of measuring the distance between the mounting platform and the upper electrode at multiple positions within the mounting surface of the mounting platform. as well as Based on the measurement results of the distance measuring substrate, the plurality of actuators are controlled to move the base component to a position where the distance at a plurality of locations within the mounting surface of the mounting stage is homogenized.

6. The control method according to claim 5, wherein, The distance measuring substrate measures the distance between the mounting stage and the upper electrode at multiple positions along the circumference of the mounting stage.

7. The control method according to any one of claims 1 to 6, wherein, The vacuum processing apparatus also includes an absorption mechanism that absorbs deformation at the bottom of the processing container. The plurality of actuators are connected to the absorption mechanism.

8. The control method according to claim 7, wherein, The absorption mechanism has: Plate components; as well as A rod member, one end of which is connected to the bottom of the processing container and the other end of which is connected to the plate member, the rod member inhibiting the transmission of deformation to the plate member. The plurality of actuators are connected to the plate member. Wherein, one end of the rod member is rotatably and slidably connected to the bottom of the processing container, and / or the other end of the rod member is rotatably and slidably connected to the plate member. The rod member rotates in a direction corresponding to the deformation of the bottom of the processing container.

9. The control method according to claim 8, wherein, The plate member is configured with a gap between it and the outer wall surface of the bottom of the processing container.

Images