Therapy sensing device

Abstract

A therapy sensing device includes a substrate, a diode, a first transistor, and a second transistor. The diode is arranged on the substrate and comprises a first end; the first transistor is arranged on the substrate and comprises a first end and a second end, and the first end of the first transistor is electrically connected with the first end of the diode; the second transistor is arranged on the substrate and comprises a first end and a second end, the first end of the second transistor is electrically connected with the first end of the diode, when the diode is in a light emitting mode, the second end of the first transistor provides positive voltage for the diode, and when the diode is in a sensing mode, the second end of the second transistor provides negative voltage for the diode. The second terminal of the second transistor provides a ground voltage or a negative voltage to the diode.

Description

TECHNICAL FIELD

[0001] The present application relates to a sensing device, and more particularly to a therapy sensing device. BACKGROUND

[0002] For the prior art integrated device with light emitting elements and light sensing elements, since more than two elements are needed, such as light emitting diodes (LEDs) and photodiodes (PDs), when the elements are arranged in an array, the resolution (pitch) of the elements is inevitably affected. For example, if a light sensing element is placed between two light emitting diodes, the pitch of the two light emitting diodes will be increased, thereby affecting the uniformity and light intensity. Conversely, the resolution of the light sensing element will also be affected by the light emitting diodes. In addition, the two different size elements also pose a challenge to the overall packaging.

[0003] To solve the above problems, the only choice is to use small size elements and reduce the pitch between the elements, but this will be limited by the element size and process limit, and cannot meet the actual needs.

[0004] Therefore, it is necessary to provide a novel sensing device to improve the above problems. SUMMARY

[0005] The present application provides a therapy sensing device, which includes a substrate, a diode disposed on the substrate, including a first end, a first transistor disposed on the substrate, including a first end and a second end, wherein the first end of the first transistor is electrically connected to the first end of the diode, and a second transistor disposed on the substrate, including a first end and a second end, wherein the first end of the second transistor is electrically connected to the first end of the diode, wherein when the diode is in a light emitting mode, the second end of the first transistor provides a positive voltage to the diode, and wherein when the diode is in a sensing mode, the second end of the second transistor provides a ground voltage or a negative voltage to the diode.

[0006] Other novel features of the present application will become more apparent from the following detailed description when taken in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF DRAWINGS

[0007] Figure 1A A structural schematic diagram of a therapy sensing device of an embodiment of the present application is shown.

[0008] Figure 1B A cross-sectional view of the therapy sensing device of Figure 1A along section A-A' is shown.

[0009] Figure 2A and Figure 2B A configuration schematic diagram of a therapy sensing device of an embodiment of the present application is shown.

[0010] Figure 3A and Figure 3B A schematic diagram showing an optimized configuration of the relative positions of the diodes in a therapeutic sensing device according to an embodiment of the present invention is illustrated.

[0011] Figure 4 A schematic diagram of the diode configuration of a treatment sensing device according to an embodiment of the present invention is shown.

[0012] Figure 5 Another schematic diagram of the structure of a therapeutic sensing device according to an embodiment of the present invention is shown.

[0013] Figure 6 An equivalent circuit diagram of a therapeutic sensing device according to an embodiment of the present invention is shown.

[0014] Figure 7 Another equivalent circuit diagram of a therapeutic sensing device according to an embodiment of the present invention is shown.

[0015] Figure 8 A further equivalent circuit diagram of a therapeutic sensing device according to an embodiment of the present invention is shown.

[0016] The meanings of the reference numerals in the above figures are as follows:

[0017] Therapeutic sensing device 10

[0018] Substrate 11

[0019] Diode 12

[0020] Therapeutic sensing device 10

[0021] Substrate 11

[0022] Diodes 12, 12-A, 12-B, 12-1, 12-2, 12-3

[0023] Joint pad 113

[0024] Substrate 115

[0025] Wiring 117

[0026] In-plane area 703

[0027] 705, outside the surface

[0028] External circuit 71

[0029] Groups GP1 to GP4

[0030] Ink and photoresist 15

[0031] Transistors M1, M2, M3, M4

[0032] Ends a1~a3, b1~b3, c1~c3, d1~d3, P, N

[0033] Gate line GL

[0034] Select line SL

[0035] Switch line SW

[0036] Insulating layers IL1, IL2 Detailed Implementation

[0037] The following describes the implementation of this disclosure through specific embodiments. Those skilled in the art can easily understand other advantages and effects of this disclosure from the content disclosed in this specification. This disclosure can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed for different viewpoints and applications without departing from the spirit of this disclosure.

[0038] It should be noted that, unless otherwise specified herein, the presence of an element "a" is not limited to having a single element, but may include one or more of the elements. Furthermore, the ordinal numbers used in the specification and claims, such as "first" and "second," to modify elements of a claim, do not in themselves imply or represent any prior ordinal number for that claimed element, nor do they represent the order of one claimed element with another, or the order of manufacture. The use of these ordinal numbers is solely to clearly distinguish one claimed element with a given name from another claimed element with the same name.

[0039] Throughout this disclosure and in the appended claims, certain terms are used to refer to specific elements. Those skilled in the art will understand that electronic device manufacturers may use different names to refer to the same element. This document is not intended to distinguish between elements that have the same function but different names. In the following description and claims, words such as “comprising,” “containing,” and “having” are open-ended terms and should therefore be interpreted as “containing but not limited to…”. Thus, when the terms “comprising,” “containing,” and / or “having” are used in the description of this disclosure, they specify the presence of the corresponding feature, area, step, operation, and / or component, but do not exclude the presence of one or more of the corresponding feature, area, step, operation, and / or component.

[0040] In this text, the terms "about," "approximately," "actually," and "roughly" typically indicate within 10%, 5%, 3%, 2%, 1%, or 0.5% of a given value or range. The given quantity is an approximate quantity; that is, even without specific mention of "about," "approximately," "actually," or "roughly," the meaning of "about," "approximately," "actually," or "roughly" can still be implied. Furthermore, the phrases "range from the first value to the second value" or "range between the first value and the second value" indicate that the range includes the first value, the second value, and other values ​​in between.

[0041] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It is understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the relevant art and the background or context of this disclosure, and should not be interpreted in an idealized or overly formal manner, unless specifically defined herein.

[0042] Furthermore, relative terms such as "below" or "bottom" and "above" or "top" may be used in the embodiments to describe the relative relationship of one element to another in the diagram. It is understood that if the device in the diagram is flipped upside down, an element depicted on the "below" side will become an element on the "above" side. When a corresponding component (e.g., a membrane or region) is referred to as "on another component," it can be directly on the other component, or there may be other components between them. On the other hand, when a component is referred to as "directly on another component," there are no components between them. Additionally, when a component is referred to as "on another component," there is a vertical relationship between them in the top-view direction, and this component can be above or below the other component, depending on the orientation of the device.

[0043] In this disclosure, the thickness can be measured using an optical microscope or by measuring a cross-sectional image from an electron microscope, but this disclosure is not limited to these methods. Furthermore, any two values ​​or directions used for comparison may have a certain degree of error. If the first value equals the second value, it implies an error of approximately 10% between the first and second values; if the first direction is perpendicular to the second direction, the angle between the first and second directions can be between 80 and 100 degrees; if the first direction is parallel to the second direction, the angle between the first and second directions can be between 0 and 10 degrees.

[0044] It should be noted that the technical solutions provided in the different embodiments below can be substituted for, combined or mixed with each other to constitute another embodiment without violating the spirit of this disclosure.

[0045] In one embodiment, the electronic device may include a display device, a backlight device, an antenna device, a sensing device, a splicing device, or a therapeutic sensing device, but is not limited thereto. The electronic device may be a bendable or flexible electronic device. The display device may be a non-emissive display device or a self-emissive display device. The antenna device may be a liquid crystal antenna device or a non-liquid crystal antenna device. The sensing device may be a sensing device that senses capacitance, light, heat, or ultrasound, but is not limited thereto. Electronic components may include passive and active components, such as capacitors, resistors, inductors, diodes, transistors, etc. Diodes may include light-emitting diodes or photodiodes. Light-emitting diodes may include, for example, organic light-emitting diodes (OLEDs), mini LEDs, micro LEDs, or quantum dot LEDs, but are not limited thereto. The splicing device may be, for example, a display splicing device or an antenna splicing device, but is not limited thereto. It should be noted that the electronic device may be any arrangement and combination of the foregoing, but is not limited thereto. The invention will be described below using a therapeutic sensing device as an electronic device, but the invention is not limited thereto.

[0046] Please refer to Figure 1A and Figure 1B , Figure 1A This diagram shows a structural schematic of a therapeutic sensing device according to an embodiment of the present invention. Figure 1B show Figure 1AThe therapeutic sensing device is shown in a cross-sectional view along line segment A-A'. The therapeutic sensing device 10 includes a substrate 11 and a plurality of diodes 12. The diodes 12 are arranged in an array on the substrate 11. The diodes 12 are mounted on a substrate 115 of the substrate 11 via bonding pads 113. The substrate 115 is provided with traces 117, which are electrically connected to the diodes 12 via the bonding pads 113, thereby driving the diodes 12 for sensing and / or treatment. Insulating layers IL1 and IL2 may be disposed on both sides of the substrate 115. At least a portion of the traces 117 may be located between the insulating layer IL1 and the substrate 115, and at least a portion of the bonding pads 113 may be located between the insulating layer IL2 and the substrate 115. The substrate 11 may include a rigid substrate, a flexible substrate, or a combination thereof. For example, the material of substrate 11 may include glass, quartz, sapphire, ceramic, polycarbonate (PC), polyimide (PI), polyethylene terephthalate (PET), other suitable substrate materials, or combinations thereof, but is not limited thereto. The aforementioned diode 12 may be, for example, but not limited to, a mini-LED, micro-LED, or other suitable diode element. When a forward bias is applied to diode 12, diode 12 is in normal operating condition and emits light, wherein the forward bias can be a positive voltage. When a reverse bias is applied to diode 12, because the reverse-biased diode 12 has photoelectric characteristics that generate current in response to external light intensity, the reverse-biased diode 12 can function as a photodiode (photosensitive element), wherein the reverse bias can be a ground voltage or a negative voltage. The aforementioned insulating layers IL1 and IL2 may include suitable insulating materials, and insulating layers IL1 and IL2 may also be ink, but the present invention is not limited thereto.

[0047] Therefore, in the therapeutic sensing device 10 of the present invention, the diode 12 with a forward bias voltage can emit light and serve as a light-emitting diode (light-emitting element), while the diode 12 with a reverse bias voltage can serve as a photodiode (photosensitive element). Accordingly, by combining the photosensitive characteristics of the reverse-biased diode 12 with the light-emitting characteristics of the forward-biased diode 12, a light detection module can be formed. This module can be used to fabricate the therapeutic sensing device 10 as a flexible diode patch to perform phototherapy and physiological signal measurement. That is, with the therapeutic sensing device 10 of the present invention, a plurality of diodes 12 can be controlled as light-emitting diodes for phototherapy, or a plurality of diodes 12 can be controlled as a portion of light-emitting diodes to emit light to the human body, and a plurality of diodes 12 can be controlled as another portion of photodiodes to sense the aforementioned light source reflected from the human body. This is used to sense the condition of the human body, and based on this sensing result, a plurality of diodes 12 can be controlled as light-emitting diodes to perform suitable phototherapy. Therefore, the treatment sensing device 10 can perform measurement functions without affecting the intensity and uniformity of phototherapy. When the diode 12 is a micro-LED, due to its small size (e.g., about 50 μm), when a portion of the diode 12 is used as a light-emitting diode, the distance between the diodes 12 in that portion will not be increased by the other portion of the diode 12 used as a photodiode, thus not affecting the light-emitting function.

[0048] Please refer to Figure 2A and Figure 2B This diagram illustrates the configuration of a therapeutic sensing device according to an embodiment of the present invention. A plurality of diodes 12 on the substrate 11 are arranged in an array, and the arrangement of diodes 12-A (light-emitting diodes) and 12-B (photodiodes) can be one-to-one, many-to-one, or many-to-many, depending on the signal-to-noise ratio at the measurement position and shape. Figure 2A In this configuration, diode 12-A, acting as a light-emitting diode, and diode 12-B, acting as a photodiode, have a many-to-one relationship. Due to the large number of light-emitting diodes, this configuration is suitable for therapeutic sensing applications requiring multiple light sources, such as therapeutic sensing of thick skin tissue. Figure 2B In this configuration, diode 12-A, acting as a light-emitting diode, and diode 12-B, acting as a photodiode, form a one-to-two pair. Because the number of light-emitting diodes is relatively small, this configuration is suitable for therapeutic sensing applications where photodiodes require less light source. Furthermore, to increase the current generated by diode 12-B due to photosensitivity, the number of diodes 12-B can be arbitrarily connected in series and / or in parallel to increase their photosensitive area and thereby increase the photocurrent. Applying a reverse bias voltage to diode 12-B can increase its photoresponsivity. In one embodiment, the reverse bias voltage ranges from 0V to -5V; in another embodiment, the reverse bias voltage ranges from -2V to -4V.

[0049] Please refer to Figure 3A and Figure 3B This diagram illustrates the relative positions of diodes in a therapeutic sensing device according to another embodiment of the present invention. Diode 12, not labeled 12-A or 12B, is an inactive element. Figure 3A In the diagram, diode 12-A, which acts as a light-emitting diode, is directly positioned next to diode 12-B, which acts as a photodiode, with a small distance between them. Figure 3B In this embodiment, diode 12-A, which serves as a light-emitting diode, and diode 12-B, which serves as a photodiode, are separated by at least one unused diode 12, and there is a large distance between them. The signal-to-noise ratio of the phototherapy and physiological signal measurement module composed of diodes 12-A and 12-B can be optimized by the aforementioned distance between diodes 12-A and 12-B, for example, but not limited to several millimeters (mm). In one embodiment, when diode 12 (12A or 12B) is a sub-millimeter light-emitting diode (mini-LED) with a wavelength of 660nm, the distance between diodes 12-A and 12-B can be 2 to 3 mm to have a preferred signal, but the present invention is not limited thereto.

[0050] Furthermore, the therapeutic sensing device of the present invention can be applied to the measurement of wound size and location. That is, the size and location of wounds on the human body can be measured by image recognition. For example, the diode 12-B, which is a photodiode, receives a weak light source on the human body part as the wound area. Therefore, during phototherapy, the diodes 12 corresponding to the aforementioned wound area are all light-emitting diodes. Here, the diode 12-A, which is a light-emitting diode, can be the diode 12-B, which is a photodiode during image recognition, and is changed to be a light-emitting diode when a forward bias is applied during phototherapy.

[0051] Figure 4 This diagram shows a diode configuration of a therapeutic sensing device according to an embodiment of the present invention. Figure 4 In this device, diode 12-A, which is a light-emitting diode, is located in the center of the therapeutic sensing device (flexible diode patch), and diode 12-B, which is a photodiode, is located around the therapeutic sensing device or at the four corners. Therefore, when the therapeutic sensing device is placed on the wrist of a human body, the photodiodes around the therapeutic sensing device 10 can extract signals in four groups GP1 to GP4, thereby determining whether there is heart rate information (i.e., artery position) that can be measured at the flexible diode patch. Since the radial artery of the human body extends along the length of the arm, the photodiodes in groups GP1 and GP3 can measure the preferred heart rate signal.

[0052] Figure 5This diagram shows another structural schematic of a therapeutic sensing device according to an embodiment of the present invention. Please refer to it as well. Figure 1B In this embodiment, the thickness and color of the insulating layer IL2 located next to the diode 12 on the substrate 115 are adjusted. In this embodiment, the insulating layer IL2 can be an ink photoresist 15 to reduce noise caused by external light in the diode 12-B, which is a photodiode, thereby increasing the signal-to-noise ratio. For example, the height of the diode 12-B can be less than the height of the ink photoresist 15. Specifically, the height of the diode 12-B is, for example, the maximum distance D1 from the upper surface of the substrate 115 to the top surface of the diode 12-B, and the height of the ink photoresist 15 is, for example, the maximum distance D2 from the upper surface of the substrate 115 to the top surface of the ink photoresist 15. Therefore, the maximum distance D1 is less than the maximum distance D2. In other embodiments, the ink photoresist 15 can be a black ink photoresist 15, thereby reducing lateral light leakage and the influence of ambient light on the diode 12-B.

[0053] Please refer to Figure 6 This diagram shows an equivalent circuit of a therapeutic sensing device according to an embodiment of the present invention. The therapeutic sensing device of this embodiment is of the actively driven type. For ease of explanation, Figure 6 Only two diodes 12 (12-A and 12-B) disposed on substrate 11 and their driving-related transistors are shown. Each diode 12 is electrically connected to a first transistor M1, a second transistor M2, and a third transistor M3 to achieve either a light-emitting mode or a sensing mode. Since the connections of each diode 12 and its driving-related transistors are identical, only one diode 12 (12-A) and its driving-related transistors will be used to illustrate its circuit connection below. As shown in the figure, diode 12-A has a first terminal P and a second terminal N. The first transistor M1 has a first terminal a1, a second terminal a2, and a control terminal a3. The second transistor M2 has a first terminal b1, a second terminal b2, and a control terminal b3. The third transistor M3 has a first terminal c1, a second terminal c2, and a control terminal c3. The first terminal a1 of the first transistor M1 is electrically connected to the first terminal P of diode 12-A. The second terminal a2 of the first transistor M1 is electrically connected to the forward bias voltage. The control terminal a3 of the first transistor M1 is electrically connected to the gate line GL. The first terminal b1 of transistor M2 is electrically connected to the first terminal P of diode 12-A. The second terminal b2 of the second transistor M2 is electrically connected to the reverse bias voltage. The control terminal b3 of the second transistor M2 is electrically connected to the switch line SW. The first terminal c1 of the third transistor M3 is electrically connected to the first terminal b1 of the second transistor M2. The second terminal c2 of the third transistor M3 is electrically connected to the readout terminal RO. The control terminal c3 of the third transistor M3 is electrically connected to the select line SL. The second terminal N of diode 12-A is grounded. The forward bias voltage is a positive voltage +V, and the reverse bias voltage is a ground voltage or a negative voltage -V.

[0054] With the circuit connection described above, the diode 12 can be operated by driving the gate line GL and the select line SL to achieve a light-emitting mode or a sensing mode. When the diode 12 is in a light-emitting mode, the second terminal a2 of the associated first transistor M1 provides a positive voltage +V to the diode 12. When the diode 12 is in a sensing mode, the second terminal b2 of the associated second transistor M2 provides a ground voltage or a negative voltage -V to the diode 12. In one embodiment, the voltage range connected to the second terminal b2 of the second transistor M2 is 0V to -5V. In another embodiment, the voltage range connected to the second terminal b2 of the second transistor M2 is -2V to -4V. In detail, the following explanation uses diode 12-A as an LED and diode 12-B as a photodiode as an example. As shown in the figure, for diode 12-A and its associated transistors, the select line SL turns off the third transistor M3, the switch line SW turns off the second transistor M2, and the gate line GL turns on the first transistor M1. This provides the positive voltage +V on the second terminal a2 of the first transistor M1 to diode 12-A, making diode 12-A forward biased and acting as an LED. Furthermore, for diode 12-B and its associated transistors, the gate line GL turns off the first transistor M1, and the switch line SW turns on the second transistor M2. This provides the ground voltage or negative voltage -V on the second terminal b2 of the second transistor M2 to diode 12-B, making diode 12-B reverse biased and acting as a photodiode. At this time, the select line SL turns on the third transistor M3 so that the sensing result of the photodiode can be read from the second terminal c2 (i.e., the readout terminal RO) of the third transistor M3.

[0055] Figure 7 This shows another equivalent circuit diagram of a therapeutic sensing device according to an embodiment of the present invention. The therapeutic sensing device of this embodiment is of the passively driven type; for ease of explanation, Figure 7 Only two diodes 12 (12-A, 12-B) disposed on the substrate 11 are shown. The following explanation uses diode 12-A as a light-emitting diode and diode 12-B as a photodiode. In the passively driven therapeutic sensing device 10, the therapeutic sensing device 10 includes an inner region 703 and an outer region 705. For example, the substrate 11 of the therapeutic sensing device 10 can be divided into an inner region 703 and an outer region 705. Diodes 12-A and 12-B are disposed in the inner region 703 and driven by an external circuit 71 disposed in the outer region 705. The external circuit 71 may include, for example, a circuit such as... Figure 6The driving circuit composed of the first transistor M1, the second transistor M2, and the third transistor M3 shown can be used to enable the external circuit 71 to apply a positive voltage +V to the diode 12-A, making the diode 12-A a light-emitting diode. The external circuit 71 can also apply a ground voltage or a negative voltage -V to the diode 12-A, making the diode 12-A a photodiode. The external circuit 17 can be an integrated circuit chip, a gate driver, or a data driver, etc., but the present invention is not limited thereto.

[0056] Figure 8 This shows another equivalent circuit diagram of a therapeutic sensing device according to an embodiment of the present invention. For ease of explanation, Figure 8 Only three diodes 12 (12-1, 12-2, 12-3) disposed on substrate 11 and their driving-related transistors are shown. Each diode 12 operates with a first transistor M1, a second transistor M2 and a fourth transistor M4 to achieve a light-emitting mode or a sensing mode. Since the connection between each diode 12 and its driving-related transistor is the same, only one diode 12 (12-1) and its driving-related transistor will be used to illustrate its circuit connection below. As shown in the figure, diode 12-1 has a first terminal P and a second terminal N. First transistor M1 has a first terminal a1, a second terminal a2 and a control terminal a3. Second transistor M2 has a first terminal b1, a second terminal b2 and a control terminal b3. Fourth transistor M4 has a first terminal d1, a second terminal d2 and a control terminal d3. The first terminal a1 of first transistor M1 is electrically connected to the first terminal d1 of fourth transistor M4. The second terminal a2 of first transistor M1 is electrically connected to data line D1. The control terminal a3 of first transistor M1 is electrically connected to gate line G1. The first terminal b1 of second transistor M2 is electrically connected to the first terminal d1 of fourth transistor M4. The second terminal b2 of second transistor M2 is electrically connected to data line D2. The control terminal b3 of second transistor M2 is electrically connected to the reverse gate line ~G1. The second terminal d2 of fourth transistor M4 is electrically connected to the first terminal P of diode 12-1. The control terminal d3 of fourth transistor M4 is electrically connected to gate line G4. The second terminal N of diode 12-1 is grounded.

[0057] With the circuit connection described above, under the control of two mutually opposite gate lines (G1 and ~G1), the first terminal P of diode 12-1 can be connected to data line D1 through the fourth transistor M4 and the first transistor M1, or connected to data line D2 through the fourth transistor M4 and the second transistor M2. Data line D1 can, for example, have a positive voltage +V, while data line D2 can, for example, have a ground voltage or a negative voltage -V. Therefore, with the aforementioned two mutually opposite gate lines (G1 and ~G1), diode 12-1 can be controlled to be forward-biased or reverse-biased, thus functioning as a light-emitting diode or photodiode. Similarly, with... Figure 8The two gate lines (G2 and ~G2) in opposite directions can control diode 12-2 to be forward-biased or reverse-biased, so as to function as a light-emitting diode or photodiode. Figure 8 The two mutually opposing gate lines (G3 and ~G3) can control diode 12-3 to be forward-biased or reverse-biased, so as to function as a light-emitting diode or a photodiode. Furthermore, in this embodiment, the fourth transistor M4 associated with diode 12-1 can be controlled to be turned on or off by gate line G4, thus allowing selection of whether diode 12-1 is enabled. Similarly, the fourth transistor M4 associated with diode 12-2 can be controlled to be turned on or off by gate line G5, thus allowing selection of whether diode 12-2 is enabled. And the fourth transistor M4 associated with diode 12-3 can be controlled to be turned on or off by gate line G6, thus allowing selection of whether diode 12-3 is enabled. Therefore, by enabling diodes 12-1, 12-2, and 12-3 at appropriate times, not only can power be saved, but the therapeutic effect can also be improved.

[0058] In addition, as mentioned above Figure 8 Please refer to the shown treatment sensing device 10 as well. Figure 7 Diodes 12-1, 12-2, and 12-3 can be disposed in the in-plane region 703 of the therapeutic sensing device 10, and the first transistor M1, the second transistor M2, and the fourth transistor M4 for driving can be disposed in the out-of-plane region 705 of the therapeutic sensing device 10. Accordingly, a passively driven therapeutic sensing device 10 can be formed.

[0059] Features of the various embodiments of the present invention can be arbitrarily combined and used as long as they do not violate the spirit of the invention or conflict with it.

[0060] The above embodiments are merely illustrative examples for ease of explanation. The scope of the claims made in this invention should be determined by the claims themselves, and not limited to the above embodiments.

Claims

1. A therapeutic sensing device, characterized in that, include: A substrate; A diode is disposed on a substrate and includes a first terminal; A first transistor is disposed on the substrate, including a first terminal and a second terminal, wherein the first terminal of the first transistor is electrically connected to the first terminal of the diode; and A second transistor is disposed on the substrate and includes a first terminal and a second terminal, wherein the first terminal of the second transistor is electrically connected to the first terminal of the diode, and wherein when the diode is in a light-emitting mode, the second terminal of the first transistor provides a positive voltage to the diode. When the diode is in a sensing mode, the second terminal of the second transistor provides a ground voltage or a negative voltage to the diode.

2. The therapeutic sensing device according to claim 1, characterized in that, in, The voltage range connected to the second terminal of the second transistor is 0V to -5V.

3. The therapeutic sensing device according to claim 2, characterized in that, in, The voltage range connected to the second terminal of the second transistor is -2V to -4V.

4. The therapeutic sensing device according to claim 1, characterized in that, It also includes a third transistor disposed on the substrate, the first terminal of the third transistor being electrically connected to the first terminal of the second transistor.

5. The therapeutic sensing device according to claim 4, characterized in that, in, When the diode is used as a light-emitting diode, the first transistor is turned on, and the second and third transistors are turned off.

6. The therapeutic sensing device according to claim 5, characterized in that, in, When the diode is used as a photodiode, the first transistor is off, and the second and third transistors are on.

7. The therapeutic sensing device according to claim 1, characterized in that, The therapeutic sensing device includes an inner area and an outer area, with the diode disposed in the inner area and the first transistor and the second transistor disposed in the outer area.

8. The therapeutic sensing device according to claim 7, characterized in that, It also includes a fourth transistor, a first terminal of which is electrically connected to the first terminal of the first transistor, and a second terminal of which is electrically connected to the first terminal of the diode.

9. The therapeutic sensing device according to claim 1, characterized in that, It also includes an ink photoresist disposed adjacent to the diode, wherein the height of the diode is less than the height of the ink photoresist.

10. The therapeutic sensing device according to claim 1, characterized in that, The ink photoresist is a black ink photoresist.

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