Packaging device and preparation method thereof

Abstract

The invention discloses a packaging device and a preparation method thereof, the packaging device comprises a substrate, a circuit layer arranged on the substrate, a plurality of electrical bonding pads and a plurality of copolar bonding pads formed based on the circuit layer, the plurality of electrical bonding pads comprise a plurality of first bonding pads and at least one second bonding pad, the plurality of co-polar bonding pads comprise a plurality of co-polar welding bonding pads and at least one co-polar routing bonding pad; the first bonding pad and the common-pole bonding pad form a flip chip mounting part, the flip chip mounting part is used for die bonding of a blue light chip and a green light chip of the flip chip structure, and the second bonding pad and the common-pole routing bonding pad form a normal chip mounting part. The normal chip installation part is used for die bonding of a red light chip of a normal chip structure. Through the cooperation of the flip chip and the normal chip, the red light chip based on the normal chip structure improves the light-emitting brightness, and adjusts the light-emitting uniformity of red, green and blue, thereby improving the light-emitting light efficiency of the packaging device.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of devices, in particular to a packaged device and a preparation method thereof. BACKGROUND

[0002] The existing packaged device mainly adopts flip chip structure, and the red light chip, green light chip and blue light chip in full flip structure are die bonded on the substrate to form a single light emitting device. Since the light emitting angle of the red light chip in the flip chip structure differs by more than 10° from the light emitting angles of the blue light chip and the green light chip, and the brightness of the red light chip in the flip chip structure is relatively low, the light emitting brightness uniformity of the red light, green light and blue light of the packaged device is affected, resulting in color cast problem of the packaged device and affecting the light emitting efficiency of the packaged device. SUMMARY

[0003] The present application aims to overcome the shortcomings of the prior art, and provides a packaged device and a preparation method thereof. The flip chip and the normal chip are arranged in cooperation, the light emitting brightness of the red light chip based on the normal chip structure is improved, the red, green and blue light emitting uniformity is adjusted, and thus the light emitting efficiency of the packaged device is improved.

[0004] The present application provides a packaged device, which comprises a substrate, a circuit layer arranged on the substrate, the circuit layer is formed with a plurality of electrical pads and a plurality of common electrode pads, the plurality of electrical pads comprises a plurality of first pads and at least one second pad, and the plurality of common electrode pads comprises a plurality of common electrode pad bonding pads and at least one common electrode wire bonding pad.

[0005] The first pad and the common electrode pad bonding pad form a flip chip mounting part, the flip chip mounting part is used for die bonding a blue light chip and a green light chip in a flip chip structure, the second pad and the common electrode wire bonding pad form a normal chip mounting part, and the normal chip mounting part is used for die bonding a red light chip in a normal chip structure.

[0006] Further, the red light chip in the normal chip structure is a reverse electrode chip structure.

[0007] Further, the thickness of the reverse electrode chip structure of the normal chip is greater than the thickness of the positive electrode chip structure of the normal chip.

[0008] Further, the circuit layer is provided with an insulating river, and the circuit layer forms the electrical pads and the common electrode pads based on the insulating river.

[0009] The width of the insulating river is d, and the value range of d is 30 μm≤d≤40 μm.

[0010] Further, the packaging device is provided with a plurality of first electrical connection channels and at least one second electrical connection channel.

[0011] The plurality of electrical pads are connected one by one with the plurality of first electrical connection channels based on the circuit layer, and the common electrode pad is connected with the second electrical connection channel based on the circuit layer.

[0012] Further, the bottom surface of the substrate is provided with a plurality of electrical pins, including a plurality of first electrical pins and at least one second electrical pin, the plurality of first electrical pins are connected one by one with the plurality of first electrical connection channels based on the electrical connection between the first electrical connection channel and the electrical pad;

[0013] The second electrical pin is electrically connected with the common electrode pad based on the second electrical connection channel.

[0014] Further, the middle position of the substrate is a chip die bonding area, the second pad, the plurality of first pads and the plurality of common electrode pads are located in the chip die bonding area, the common electrode wire bonding pad is located outside the chip die bonding area, and the common electrode wire bonding pad is close to the chip die bonding area.

[0015] Further, the top surface of the substrate is provided with an ink layer, the ink layer covers the surface of the circuit layer, and the electrical pad and the common electrode pad are exposed outside the ink layer.

[0016] Further, the thickness of the ink layer is h, and the value range of h is 6 μm≤h≤16 μm.

[0017] Further, the packaging device further comprises a plastic sealing film layer, which is attached to the top surface of the substrate based on the film attachment process.

[0018] The application also provides a preparation method of a packaging device, the preparation method is used for preparing the packaging device, and the preparation method comprises the following steps:

[0019] A substrate plate with a plurality of flip-chip mounting parts and a plurality of normal-chip mounting parts is provided.

[0020] A red light chip is die-bonded on the normal-chip mounting part of the substrate plate, and a blue light chip and a green light chip are die-bonded one by one on the flip-chip mounting part of the substrate plate.

[0021] The top surface electrode of the red light chip is wire-bonded to the common electrode wire-bonding pad of the substrate plate based on the wire bonding process.

[0022] A plastic sealing film layer is attached to the substrate plate based on the film attachment process.

[0023] The substrate plate is scribed to obtain a plurality of packaging devices.

[0024] Further, the film pasting process comprises:

[0025] After the die bonding and wire bonding process is completed, the substrate plate is placed in an oven, the baking temperature of the oven is set to 130 DEG C ~ 150 DEG C, and the baking time is set to 2h ~ 4h.

[0026] After the adhesive film is thawed, the protective film is separated, and the adhesive surface of the adhesive film is exposed.

[0027] Preheating is placed in an environment of 80 DEG C ~ 90 DEG C, and the preheated adhesive film is pasted on the substrate plate in a vacuum environment.

[0028] Heating at 130 DEG C ~ 150 DEG C for 1h ~ 3h to completely cure the adhesive film.

[0029] Separating the base film on the surface of the adhesive film forms a plastic encapsulation film layer on the substrate plate.

[0030] Further, the adhesive film is thawed after separating the protective film, and the adhesive surface of the adhesive film is exposed.

[0031] The adhesive film is taken out of the freezer and placed in an environment of 20 DEG C ~ 30 DEG C to thaw the adhesive film to room temperature.

[0032] The adhesive film at room temperature is protected by separating the protective film, and the adhesive surface of the adhesive film is exposed.

[0033] The application provides a packaging device and a preparation method thereof, by setting the substrate with flip chip mounting part and vertical chip mounting part, the substrate structure can meet the packaging requirements of different chip structure types of light emitting chips, based on the red light chip of vertical chip structure, the light emitting angle and light emitting brightness of the red light chip are improved, the red light, green light and blue light of the packaging device are uniform, and the light emitting brightness of the packaging device is improved.

[0034] The film pasting process is used to form a plastic encapsulation film layer on the substrate, improve the elastic performance of the plastic encapsulation structure of the packaging device, avoid the cracking of the plastic encapsulation structure after plastic encapsulation, improve the plastic encapsulation reliability of the packaging device, and reduce the plastic encapsulation cost of the packaging device based on the film pasting process, and realize low-cost processing. BRIEF DESCRIPTION OF DRAWINGS

[0035] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or prior art description. Obviously, the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained without creative labor based on these drawings.

[0036] Figure 1 is a structure top view of a packaged device in an embodiment of the present application;

[0037] Figure 2 is a structure section view of a packaged device in an embodiment of the present application;

[0038] Figure 3 is a substrate top surface line layer structure top view of a packaged device in an embodiment of the present application;

[0039] Figure 4 is a substrate bottom surface electrical pin structure schematic diagram of a packaged device in an embodiment of the present application;

[0040] Figure 5 is a flow chart of a preparation method of a packaged device in an embodiment of the present application. DETAILED DESCRIPTION

[0041] The technical solutions in the embodiments of the present application will be described clearly and completely below with the drawings in the embodiments of the present application. Obviously, the described embodiments are only some embodiments of the present application, not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor are within the protection scope of the present application.

[0042] Embodiment one:

[0043] Figure 1 shows a structure top view of a packaged device in an embodiment of the present application; Figure 2 shows a structure section view of a packaged device in an embodiment of the present application, the packaged device comprising a substrate 1, a line layer arranged on the substrate 1, a plurality of electrical pads 3 and a plurality of common electrode pads 2 formed based on the line layer, the plurality of electrical pads 3 comprising a plurality of first pads 31 and at least one second pad 32, and the plurality of common electrode pads 2 comprising a plurality of common electrode solder pads 21 and at least one common electrode wire bonding pad 22;

[0044] The first pad 31 and the common electrode solder pad 21 form a flip chip mounting portion, the flip chip mounting portion being used for fixing a flip chip structure blue light chip 30 and a flip chip structure green light chip 20, the second pad 32 and the common electrode wire bonding pad 22 form a normal chip mounting portion, the normal chip mounting portion being used for fixing a normal chip structure red light chip 10.

[0045] Wherein, the electrically conductive pads 3 are conductive structures for connecting chip electrodes of different polarities or functions, which can be formed by etching or electroplating process using copper, aluminum or alloy materials, and the surface can be plated with nickel, gold or silver to enhance conductivity and oxidation resistance. In the scheme, by dividing the first pads 31 and the second pads 32, the electrode layout of the flip-chip and the normal-chip is adapted respectively, so that the packaging device can meet the mounting requirements of the red light chip 10 of the normal-chip structure, and avoid the electrode brittleness and the pin printing defects of the red light chip 10 caused by the flip-chip process.

[0046] Further, the common electrode pads 2 are conductive structures for connecting multiple common electrodes of chips, which can be divided into two types of common electrode solder pads 21 and common electrode wire bonding pads 22. The former realizes the common electrode connection of the flip-chip through soldering, and the latter realizes the common electrode connection of the normal-chip through wire bonding, so that the common electrode connection structure can be formed between the blue light chip 30 and the green light chip 20 of the flip-chip structure and the red light chip 10 of the normal-chip structure.

[0047] Further, the flip-chip mounting part refers to the area composed of the first pads 31 and the common electrode solder pads 21, which can realize the mechanical fixation and electrical connection of the flip-chip and the pads through solder bumps or conductive glue. In the scheme, a high-density packaging structure is provided for the blue-green light chip 20, and the flip-chip process is used to improve the heat dissipation efficiency and packaging reliability.

[0048] Wherein, the normal-chip mounting part refers to the area composed of the second pads 32 and the common electrode wire bonding pads 22. The bottom electrode of the red light chip 10 of the normal-chip structure is fixed on the second pads 32, and the top electrode of the red light chip 10 is wire-bonded on the common electrode wire bonding pads 22 through wire bonding process. The wire bonding connection eliminates the risk of electrode damage under pressure of the red light chip 10, and optimizes the light emitting angle to reduce the color deviation with blue and green light.

[0049] The pad circuit design of the substrate 1 forms independent flip-chip mounting part and normal-chip mounting part through circuit layer partition design, and integrates the flip-chip blue-green light chip 20 and the normal-chip red light chip 10 in a single packaging device. The flip-chip mounting part uses the common electrode solder pads 21 to realize direct soldering of the common electrode surface of the chip, which adapts to the high-density packaging requirements of the blue-green light chip 20. The normal-chip mounting part uses the common electrode wire bonding pads 22 combined with wire bonding to avoid the electrode brittleness defects of the red light chip 10 in the flip-chip process, and optimizes the light emitting angle consistency through the normal-chip structure.

[0050] Specifically, the red light chip 10 of the positive chip structure is a reverse electrode chip structure, that is, the cathode of the red light chip 10 is arranged on the top surface of the chip, and the anode of the red light chip 10 is arranged on the bottom surface of the chip, so that the anode end of the red light chip 10 is in surface contact connection with the common electrode welding pad 21 through the die bonding solder, thereby improving the heat dissipation effect of the anode end of the red light chip 10, and at the same time, the cathode end is arranged on the top surface of the chip, and based on the structural design of the cathode end, the top surface of the red light chip 10 has sufficient welding area to improve the reliability of wire bonding.

[0051] Specifically, the thickness of the reverse electrode chip structure of the positive chip is greater than the thickness of the positive electrode chip structure of the positive chip, and in this embodiment, the thickness of the reverse electrode chip structure of the positive chip is set to 35 μm, which is 10 μm greater than the thickness of the conventional positive chip structure, so that the overall thickness of the packaged device is thickened, thereby improving the stability of the overall packaging structure of the packaged device.

[0052] Specifically, Figure 3 A top surface line layer structure of the substrate of the packaged device in the embodiment of the application is shown in the figure; Figure 4 A bottom surface electrical pin structure of the substrate of the packaged device in the embodiment of the application is shown in the figure, the line layer is provided with an insulating river, and the line layer forms the electrical pad 3 and the common electrode pad 2 based on the insulating river; the width of the insulating river is d, and the value of d is in the range of 30 μm≤d≤40 μm, the value of d can be one of 30 μm, 32 μm, 34 μm, 36 μm, 38 μm and 40 μm, and the insulating river is configured as a physical isolation structure, which forms a continuous groove on the surface of the line layer and divides the line layer into the electrical pad 3 area and the common electrode pad 2 area.

[0053] Based on the insulating river, effective insulation and isolation between the pads are achieved, and the risk of short circuit is avoided. The precise width control of the insulating river ensures sufficient insulation distance and avoids excessive occupation of layout space. This design not only ensures insulation reliability, but also meets the demand of high-density packaging, which is conducive to improving the integration and performance of the device.

[0054] Specifically, the packaged device is provided with an electrical channel 4, the electrical channel 4 includes a plurality of first electrical connection channels 41 and at least one second electrical connection channel 42; a plurality of electrical pads 3 are connected one by one with a plurality of first electrical connection channels 41 based on the line layer, and the common electrode pad 2 is connected with the second electrical connection channel 42 based on the line layer.

[0055] The bottom surface of the substrate 1 is provided with a plurality of electrical pins 7, including a plurality of first electrical pins 71 and at least one second electrical pin 72, the plurality of first electrical pins 71 are one-to-one connected to the plurality of first electrical connection channels 41, and based on the electrical connection between the first electrical connection channel 41 and the electrical pad 3, the second electrical pin 72 is electrically connected to the common electrode pad 2 based on the second electrical connection channel 42. Wherein, the first electrical pin 71 is connected to the electrical pad 3 through the first electrical connection channel 41 one-to-one, and each electrical pad 3 has an independent transmission path to avoid signal cross interference. When the second electrical pin 72 is connected to the common electrode pad 2 through the second electrical connection channel 42, the common electrode is transmitted to the external pin through a single channel, reducing redundant wiring.

[0056] Further, the bottom surface of the substrate 1 is provided with an ink mark 6, which is used to mark the electrical pin 7 corresponding to the common electrode pad 2 in the plurality of electrical pins 7, that is, for positioning mark, to ensure that the packaging device can be accurately mounted on the external working circuit based on the plurality of electrical pins 7, thereby improving the use convenience and accuracy of the packaging device.

[0057] Specifically, the middle position of the substrate 1 is a chip die bonding area, the second pad 32, the plurality of first pads 31 and the plurality of common electrode pads 21 are located in the chip die bonding area, and the common electrode wire bonding pad 22 is located outside the chip die bonding area and close to the chip die bonding area, which can reduce the wire bonding distance of the red light chip 10, thereby improving the convenience of die bonding of the red light chip 10.

[0058] Wherein, the chip die bonding area is defined in the middle position of the substrate 1, the second pad 32, the first pad 31 and the common electrode pad 21 are arranged in the area, so that the core components of the flip chip mounting part and the normal chip mounting part form a compact layout. The common electrode wire bonding pad 22 is arranged outside the chip die bonding area, and the distance between the common electrode wire bonding pad 22 and the die bonding area boundary is controlled within a preset range. The position distribution of the electrical pad 3 and the common electrode pad 2 formed by the circuit layer is coordinated with the structure of the substrate 1, the pads of the flip chip mounting part are concentrated in the die bonding area, and the common electrode wire bonding pad 22 of the normal chip mounting part is outside but adjacent to the die bonding area, avoiding the interference of the wire bonding pad to the internal layout, while reducing the wire bonding distance and improving the convenience of die bonding.

[0059] The middle part of the die bonding area of the chip is arranged to enable the flip-chip blue light chip 30 and the green light chip 20 to be connected to the common electrode pad 21 through the first pad 31, thereby reducing signal transmission loss. When the flip-chip red light chip 10 is connected to the common electrode pad 22 through the second pad 32, the design of the common electrode pad 22 close to the edge of the die bonding area shortens the wire bonding distance, reduces the risk of wire sagging, and improves the connection reliability. At the same time, the external common electrode pad 22 releases the internal space of the die bonding area, so that the pad layout of the flip-chip and the flip-chip does not interfere with each other, the wire density of the circuit layer on the substrate 1 is reduced, and the risk of short circuit caused by line intersection is avoided. By limiting the relative position of the common electrode pad 22 and the die bonding area, the overall size of the substrate 1 is compressed, the size of the device is reduced, and the miniaturization packaging demand is met.

[0060] Specifically, the top surface of the substrate 1 is provided with an ink layer 5, the ink layer 5 is covered on the surface of the circuit layer, and the electrically conductive pad 3 and the common electrode pad 2 are exposed outside the ink layer 5. The ink layer 5 forms a continuous protective layer by covering the surface of the circuit layer, and at the same time exposes the pad structure, to meet the die bonding connection requirements of the red light chip 10, the green light chip 20 and the blue light chip 30. In this embodiment, the ink layer 5 is black ink to improve the light efficiency of the packaged device.

[0061] Further, after forming the circuit layer on the top surface of the substrate 1, the ink layer 5 is coated on the surface of the circuit layer by a screen printing process. After pre-baking to remove the solvent, an exposure and development process is used to form a window structure in the pad corresponding area. The developed ink layer 5 is treated by post-curing to form a stable insulating protective layer.

[0062] Specifically, the thickness of the ink layer 5 is h, and the value of h is in the range of 6 μm≤h≤16 μm. When the ink layer 5 is covered on the surface of the circuit layer, its thickness is limited to be between 6 microns and 16 microns. The value of the thickness h of the ink layer 5 can be one of 6 μm, 8 μm, 10 μm, 12 μm, 14 μm and 16 μm. The minimum thickness of the ink layer 5 is set to 6 microns. The amount of ink coating can be controlled by the screen printing process to ensure that the covered area forms a continuous and pinhole-free protective layer. When the ink layer 5 cooperates with the circuit layer and exposed pads on the substrate 1, the lower limit of the thickness can prevent the protective layer from failing due to the ink layer 5 being too thin, and the upper limit of the thickness can prevent stress concentration caused by volume shrinkage of the ink material during the curing process.

[0063] Specifically, the packaging device further comprises a plastic sealing film layer 8 which is attached to the top surface of the substrate 1 based on a film attaching process. The plastic sealing film layer 8 can be realized by a preformed solid film material, and the plastic sealing film layer 8 is formed on the substrate 1 based on a glue film attaching process, so that the plastic sealing film layer 8 has good elastic properties and can avoid the cracking of the epoxy resin material plastic sealing glue body under heat, thereby improving the plastic sealing protection performance of the packaging device.

[0064] Further, the plastic sealing film layer is processed and formed based on the film attaching process, which can realize one-time forming of the plastic sealing film layer on the substrate, has the effects of fast forming rate and low equipment depreciation rate, and can reduce the plastic sealing equipment cost of the packaging device. The equipment cost of the film attaching equipment is about 5% of the equipment cost of the resin plastic sealing equipment, and the glue film attaching integrated forming structure has the effect of high efficiency cost reduction.

[0065] Specifically, Table 1 shows the light emitting angle and brightness comparison of the packaging device in the embodiment of the application and the conventional packaging device.

[0066]

[0067] The red light chip with the normal chip structure can improve the light emitting angle and brightness of the red light chip, so that the light emitting brightness of the red light chip, the green light chip and the blue light chip is uniform, and the color deviation is reduced.

[0068] Embodiment two:

[0069] Figure 5 The preparation method of the packaging device in the embodiment of the application is shown in the flow chart, and the preparation method comprises:

[0070] S11: providing a substrate plate material with a plurality of flip chip mounting parts and a plurality of normal chip mounting parts;

[0071] A metal layer is plated on the top surface and the bottom surface of the substrate plate material, a circuit layer structure is formed by pattern etching, a plurality of through hole structures are provided on the substrate by a punching process, metal is deposited in the through hole structures, so that the through hole structures and the circuit layers of the top surface and the bottom surface of the substrate plate material can be electrically connected, thereby forming an electrical connection structure in the substrate plate material to meet the die bonding connection requirements of the light emitting chip.

[0072] Further, a plurality of device units are formed on the substrate plate material based on pattern etching, each device unit is provided with two flip chip mounting parts and one normal chip mounting part, which can meet the die bonding mounting requirements of the blue light chip, the green light chip with the flip chip structure and the red light chip with the normal chip structure.

[0073] S12: The red light chip is fixed on the front chip mounting part of the substrate, and the blue light chip and the green light chip are fixed on the flip chip mounting part of the substrate one by one.

[0074] Based on the steel mesh brush tin process, tin brushing is performed on the top surface circuit layer of the substrate, so that the first pad, the second pad and the common electrode pad of the top surface circuit layer of the substrate can be attached to the tin paste, the red light chip of the front chip structure is fixed on the second pad, and the blue light chip and the green light chip of the flip chip structure are fixed on the flip chip mounting part one by one, and the fixed crystal operation is completed after passing through the oven.

[0075] S13: Based on the wire bonding process, the top surface electrode of the red light chip is wire bonded to the common electrode wire pad of the substrate.

[0076] The wire bonding operation is performed on the red light chip of each device unit, so that the top surface electrode of the red light chip is wire bonded to the common electrode wire pad, so that the top surface electrode of the red light chip is connected to the common electrode pad of the substrate, and the green light chip, the blue light chip and the red light chip can form a common electrode connection structure.

[0077] S14: Based on the film pasting process, a plastic encapsulation film layer is pasted on the substrate.

[0078] Specifically, after the fixed crystal wire bonding process is completed, the substrate is placed in an oven, the baking temperature of the oven is set to 130-150℃, and the baking time is set to 2-4h, so that the water content on the surface of the substrate is reduced, the substrate is in a dry state, and the influence of water content on the substrate on the film pasting operation is reduced.

[0079] After the adhesive film is thawed, the protective film is separated, and the adhesive surface of the adhesive film is exposed. The adhesive film is provided in a three-layer structure, including two layers of release film made of PET material and one layer of adhesive film made of adhesive material, and based on the internal composition of the PET material, a protective film with light release film characteristics and a base film with heavy release film characteristics are formed. After thawing, the protective film can be separated by a mechanical hand or manually, so that one side of the adhesive film is exposed as the adhesive surface of the adhesive film.

[0080] Further, the adhesive is a gray-black liquid with a viscosity of 3000-9000mPa.s, and a density of 1.1-1.3g / cm 2 Based on the mold pressing operation, the adhesive film made of adhesive material can be tightly pasted on the substrate.

[0081] The preheated adhesive film is attached to the substrate plate in a vacuum environment. The adhesive is preheated at 80-90 DEG C, which activates the adhesive and forms a viscous adhesive structure with certain fluidity. The preheated adhesive film is attached to the substrate plate, which protects the circuit layer and the light-emitting chip of the substrate plate.

[0082] Further, the preheated adhesive film has certain fluidity, which can adapt to the surface shape structure of the substrate plate.

[0083] Further, after the substrate plate is baked and dehumidified, the preheated adhesive film is attached and molded. The substrate plate is plasma cleaned before the adhesive film is attached, to ensure the stability and reliability of the plastic encapsulation.

[0084] The adhesive film is heated at 130-150 DEG C for 1-3 hours. The adhesive film is heated and cured, for example, heated at 130 DEG C for 3 hours or heated at 150 DEG C for 1 hour.

[0085] Further, the thermal expansion coefficient of the cured adhesive film is 20-801 ppm, and the elastic modulus is 1.0-5.0 GPa, which can meet the plastic encapsulation requirements of the substrate plate and has a certain elastic modulus, reducing the risk of cracking of the plastic encapsulation film layer.

[0086] Separate the base film on the surface of the adhesive film to form a plastic encapsulation film layer on the substrate plate. The base film of the cured adhesive film is separated, so that the base film is completely separated from the adhesive film, thereby retaining the cured adhesive film attached to the substrate plate to form a plastic encapsulation film layer structure.

[0087] Further, the separating the protective film from the adhesive film after thawing includes:

[0088] The adhesive film is taken out of the freezer and placed in an environment of 20-30 DEG C to thaw to room temperature. The adhesive film at room temperature is separated from the protective film to expose the adhesive surface. The adhesive film is thawed to room temperature to avoid moisture absorption during preheating. When the protective film is separated, the adhesive film is kept flat to ensure the stability of the separation operation and reduce the risk of damage to the adhesive film.

[0089] S15: scribing the substrate plate to obtain a plurality of packaging devices.

[0090] The substrate plate is scribed by a cutting device according to a preset path to form a plurality of packaging devices.

[0091] In addition, the above detailed description of the packaging device and the preparation method thereof provided by the embodiments of the present application, the principles and implementation manners of the present application are described by using specific examples. The above description of the embodiments is only used to help understand the method of the present application and its core idea. Meanwhile, for those skilled in the art, according to the idea of the present application, the specific implementation manners and application ranges will be changed. In summary, the content of the specification should not be understood as a limitation of the present application.

Claims

1. A packaged device, characterized in that, The packaging device includes: a substrate, a circuit layer disposed on the substrate, the circuit layer having a plurality of electrical pads and a plurality of common pads, the plurality of electrical pads including a plurality of first pads and at least one second pad, the plurality of common pads including a plurality of common bonding pads and at least one common wire bonding pad; The first pad and the common electrode bonding pad form a flip chip mounting portion, which is used for blue and green LED chips in a die-bonded flip chip structure. The second pad and the common electrode bonding pad form a standard chip mounting portion, which is used for red LED chips in a die-bonded standard chip structure.

2. The packaged device as described in claim 1, characterized in that, The red light chip in the upright chip structure is a reverse electrode chip structure.

3. The packaged device as described in claim 2, characterized in that, The thickness of the reverse electrode chip structure of the positive-mounted chip is greater than the thickness of the positive electrode chip structure of the positive-mounted chip.

4. The packaged device as claimed in claim 1, characterized in that, The circuit layer is provided with insulating channels, and the electrical pads and the common pads are formed on the circuit layer based on the insulating channels; The width of the insulated channel is d, and the value of d is in the range of 30μm≤d≤40μm.

5. The packaged device as claimed in claim 1, characterized in that, The packaging device is provided with a plurality of first electrical connection channels and at least one second electrical connection channel; Several electrical pads are connected one-to-one with several first electrical connection channels based on the circuit layer, and the common pad is connected to the second electrical connection channel based on the circuit layer.

6. The packaged device as described in claim 5, characterized in that, The bottom surface of the substrate is provided with a plurality of electrical pins, including a plurality of first electrical pins and at least one second electrical pin. The plurality of first electrical pins are connected one-to-one to a plurality of first electrical connection channels, and are electrically connected to the electrical pads based on the first electrical connection channels. The second electrical pin is electrically connected to the common pad based on the second electrical connection channel.

7. The packaged device as claimed in claim 1, characterized in that, The central part of the substrate is the die bonding area. The second pad, a plurality of the first pads, and the plurality of common electrode bonding pads are located within the die bonding area. The common electrode wire bonding pads are located outside the die bonding area and are close to the die bonding area.

8. The packaged device as claimed in claim 1, characterized in that, An ink layer is provided on the top surface of the substrate, the ink layer covers the surface of the circuit layer, and the electrical pads and the common pads are exposed outside the ink layer.

9. The packaged device as claimed in claim 8, characterized in that, The thickness of the ink layer is h, and the value of h is in the range of 6μm≤h≤16μm.

10. The packaged device as claimed in claim 1, characterized in that, The packaging device also includes a molding compound layer, which is bonded to the top surface of the substrate using a lamination process.

11. A method for fabricating a packaged device, characterized in that, The preparation method is used to prepare the packaged device as described in any one of claims 1 to 10, the preparation method comprising: A substrate material with several flip-chip mounting sections and several upright chip mounting sections is provided; Red LED chips are die-bonded onto the upright chip mounting portion of the substrate, and blue and green LED chips are die-bonded onto the flip chip mounting portion of the substrate one by one. The top electrode of the red light chip is wire-bonded to the common electrode bonding pad of the substrate using a wire bonding process. A molding compound layer is bonded onto a substrate using a lamination process. The substrate is diced to obtain several packaged devices.

12. The method for fabricating the packaged device as described in claim 11, characterized in that, The process of laminating a molding compound layer onto a substrate using a lamination process includes: After completing the die bonding and wire bonding process, place the substrate in an oven and set the baking temperature to 130℃~150℃ and the baking time to 2h~4h. After thawing the adhesive film, separate the protective film to expose the adhesive surface of the film; Preheat the film at 80℃~90℃, and then bond the preheated film to the substrate in a vacuum environment. Heat at 130℃~150℃ for 1h~3h to allow the adhesive film to fully cure. The base film on the surface of the adhesive film is separated to form a molding sealant layer on the substrate.

13. The method for fabricating the packaged device as described in claim 12, characterized in that, The step of thawing the adhesive film and separating the protective film to expose the adhesive surface of the film includes: Remove the film from the freezer and place it in an environment of 20℃~30℃ to thaw it to room temperature; The protective film of the adhesive film at room temperature is separated to expose the bonding surface of the adhesive film.

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