Novel wafer-level imprinting process

Abstract

The invention discloses a novel wafer-level imprint process. The novel wafer-level imprint process comprises the following imprint steps: S1, pattern manufacturing; s2, pattern transfer; s3, dispensing is carried out; s4, counterpoint imprinting is carried out; s5, UV curing is carried out; s6, opening the mold; s7, performing baking; s8, stripping is carried out; the structure is reasonable, the area size of the microstructure on the wafer is determined by the graphical mask and can not be influenced by various factors in the imprinting process, the product yield can be effectively improved, the design size of the glue overflowing groove can be effectively reduced through the imprinting method, the product yield is increased, and by means of the method, the production cost is reduced, and the production efficiency is improved. And finally, the design of the embossed pattern template can be simplified.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor devices, in particular to a novel wafer-level imprint process. BACKGROUND

[0002] In a general patterned imprint process, different dispensing or spin coating processes and template designs are used to help obtain regular imprinted patterns, but such a scheme is faced with increasingly low underfill requirements and complex microstructures, and the overflow groove is designed to be too large, resulting in a decrease in the yield coefficient and economic benefits.

[0003] At the same time, with the development of imprint technology, imprinting is not limited to the surface of simple materials, and when imprinting is performed on wafers with complex structures, it is required that the product cannot leave imprinting glue in the electrode or fine structure area. The current general imprinting scheme needs to be windowed or processed in the corresponding position or use other process routes to process each area separately. In addition to the cost increase, the new process also has a yield problem. To solve the above problems, a solution is proposed below. SUMMARY

[0004] The purpose of the present application is to provide a novel wafer-level imprint process, which creates a new method to directly imprint on the whole wafer without contacting the key position of the wafer, thereby reducing the process steps.

[0005] The above technical purpose of the present application is achieved by the following technical scheme:

[0006] A novel wafer-level imprint process includes the following imprint steps:

[0007] S1, pattern making, manufacturing the required pattern on the mask through laser cutting or punch cutting to obtain a patterned mask;

[0008] S2, pattern transfer, aligning the patterned mask with the mark point of the wafer through the alignment of the imprinter, and then obtaining a wafer combined with the patterned mask;

[0009] S3, dispensing, injecting glue into the mold through a full-automatic dispensing machine, and standing for a period of time to ensure that there are no bubbles in the glue;

[0010] S4, alignment and imprinting, the mold and the wafer are sent into the imprinter for alignment and imprinting, the mark points of the mold and the wafer are aligned during the imprinting process, and the glue is combined with the wafer surface through imprinting expansion;

[0011] S5, UV curing, the imprinter can cure the expanded glue through ultraviolet light, and the combination of the mold and the wafer needs to be stood for a period of time after curing to ensure that the curing reaction of the glue is complete.

[0012] S6, the mold is separated from the wafer and the cured glue, and the microstructure on the mold is transferred to the cured glue on the wafer surface;

[0013] S7, baking, the wafer is sent into an oven for baking, and the epoxy resin glue is completely cured;

[0014] S8, peeling, the patterned mask after baking is separated from the wafer by peeling, and the overflowed epoxy resin glue is peeled together with the patterned mask, so that the epoxy resin glue embossing pattern with regular shape is obtained on the wafer surface.

[0015] As a preferred, the glue in step S3 is epoxy resin glue, and the full-automatic glue dispenser can inject the epoxy resin glue on the mold with microstructure on the surface.

[0016] As a preferred, in step S5, the embosser is an ultraviolet curing nano-embosser.

[0017] As a preferred, in step S6, since the bonding performance of the epoxy resin glue is worse than that of the wafer surface, the epoxy resin glue is combined with the wafer surface and separated from the mold when demolding.

[0018] As a preferred, the wafer to be baked is placed on a tray or a shelf dedicated to the oven. Then, the tray or the shelf with the wafer is placed in the oven, and after setting the temperature and the time according to the process requirements, the wafer can be baked until the epoxy resin glue is completely cured.

[0019] The present application has the following advantages: different patterns can be made on the mask by laser cutting or punching cutting, and a plurality of patterned masks are obtained. Since the sizes of the patterns of the plurality of patterned masks are different, the size of the microstructure region on the wafer can be determined, so that the wafer is no longer affected by various factors in the embossing process. This not only can effectively improve the yield of products, but also can effectively reduce the design size of the overflow glue groove by this method, thereby increasing the yield of products, and finally can be beneficial to simplify the design of the embossing pattern template. BRIEF DESCRIPTION OF DRAWINGS

[0020] Figure 1 S1 is a pattern making schematic diagram of an embodiment;

[0021] Figure 2 S2 is a schematic diagram of an embodiment;

[0022] Figure 3 S3 is a glue dispensing schematic diagram of an embodiment;

[0023] Figure 4 S4 is an alignment and embossing schematic diagram of an embodiment;

[0024] Figure 5 S5 UV curing schematic diagram for the embodiment;

[0025] Figure 6 S6 mold opening schematic diagram for the embodiment;

[0026] Figure 7 S7 baking schematic diagram for the embodiment;

[0027] Figure 8 S8 peeling schematic diagram for the embodiment. DETAILED DESCRIPTION

[0028] The following description is only a preferred embodiment of the present application, and the protection scope is not limited to the embodiment only, and any technical solutions falling within the concept of the present application should fall within the protection scope of the present application. Identical parts are denoted by identical reference numerals. It should be noted that the words "front", "back", "left", "right", "up" and "down" used in the following description refer to the directions in the drawings, and the words "bottom" and "top", "inner" and "outer" refer to the directions towards or away from the geometric center of a particular part.

[0029] As shown in Figures 1 to 8 A new wafer-level imprinting process, comprising the following imprinting steps: S1, pattern making, an existing laser cutting machine can manufacture the required pattern on the mask through laser cutting or punching cutting, thereby obtaining a patterned mask, and different patterns can be cut according to the needs of different customers, until different patterned masks are obtained.

[0030] S2, pattern transfer, the patterned mask and the wafer are placed into the imprinting machine respectively, the mark points of the patterned mask and the wafer are aligned through the alignment of the imprinting machine, then the patterned mask can be directly imprinted onto the wafer surface through nano-imprinting technology, so that the pattern can be transferred to the wafer.

[0031] S3, dispensing, the existing full-automatic dispensing machine can inject glue on the mold, wherein the glue is epoxy resin glue, the epoxy resin glue can be injected on the mold with microstructure on the surface and left for a period of time, so as to ensure that there is no air bubble in the glue.

[0032] S4, alignment and imprinting, the mold and the wafer are sent into the imprinting machine together, so as to perform alignment and imprinting, the mark points of the mold and the wafer are aligned through alignment during the imprinting process, then the glue can be combined with the wafer surface through imprinting.

[0033] S5, UV curing, the imprinting machine is a UV curing nano-imprinting machine, after the glue is combined with the wafer surface, the imprinting machine can cure the expanded glue through UV light, after the curing is completed, the combination of the mold and the wafer is left for a period of time, so as to ensure that the curing reaction of the glue is complete.

[0034] S6, demolding, since the bonding performance of the epoxy resin glue is worse than that of the wafer surface, when the mold and wafer are demolded by the existing demolding method, the epoxy resin glue will be combined with the wafer surface and separated from the mold, and the microstructure on the mold will be transferred to the epoxy resin glue on the wafer surface.

[0035] S7, baking, the wafer to be baked is placed on a special tray or shelf of the oven, and then the tray or shelf with the wafer is placed in the oven for drying, and different temperatures and times can be set according to different requirements, so as to bake the wafer and the epoxy resin glue until the epoxy resin glue is completely cured.

[0036] S8, peeling, the patterned mask after baking can be separated from the wafer by the existing peeling method, wherein the overflowed epoxy resin glue can be peeled off together with the patterned mask, and finally the wafer surface can obtain the epoxy resin glue embossing pattern with regular shape.

[0037] The whole process can make different patterns on the mask by laser cutting or punching cutting, and obtain several different patterned masks, since the sizes of the patterns of the several patterned masks are different, the size of the microstructure area on the wafer can be determined, and the contact between the glue and the key position of the wafer is avoided, so that it can no longer be affected by various factors in the embossing process, which not only can effectively improve the yield of products, but also can effectively reduce the design size of the overflow glue groove by this method, thereby increasing the yield of products, and finally can be beneficial to simplify the design of the embossing pattern template.

[0038] The above specific embodiments further illustrate the technical problems solved by the present application, technical solutions and beneficial effects, and it should be understood that the above description is only a specific embodiment of the present application and is not used to limit the present application, any modification, equivalent replacement, improvement, etc. within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. A novel wafer level imprinting process characterized by, The method comprises the following steps of: S1, pattern making, a pattern is made on a mask by laser cutting or punching cutting, to obtain a patterned mask; S2, pattern transfer, the patterned mask is aligned with mark points of a wafer by alignment of a press machine, and then a wafer combined with the patterned mask is obtained; S3, dispensing, glue is injected on a mold by a full-automatic dispensing machine, and the glue is left to stand for a period of time to ensure that there is no air bubble in the glue; S4, alignment and pressing, the mold and the wafer are sent into the press machine for alignment and pressing, the mark points of the mold and the wafer are aligned by alignment during the pressing process, and the glue is combined with the wafer surface by pressing expansion; S5, UV curing, the glue after pressing expansion is cured by the press machine, and the combination of the mold and the wafer is left to stand for a period of time after curing to ensure that the curing reaction of the glue is complete; S6, mold opening, the wafer and the cured glue are separated from the mold, and the microstructure on the mold is transferred to the cured glue on the wafer surface; S7, baking, the wafer is sent into an oven for baking, and the epoxy resin glue is completely cured; S8, peeling, the patterned mask after baking is separated from the wafer by peeling, and the overflowed epoxy resin glue is peeled together with the patterned mask, so that the epoxy resin glue press pattern with regular shape is obtained on the wafer surface.

2. A novel wafer level imprinting process according to claim 1, wherein, The glue in step S3 is epoxy resin glue, and the full-automatic dispensing machine can inject the epoxy resin glue on the mold with microstructure on the surface.

3. A novel wafer level imprinting process according to claim 2, wherein, In step S5, the press machine is a UV curing nano press machine.

4. A novel wafer level imprinting process as claimed in claim 1, wherein, In step S6, because the bonding performance of the epoxy resin glue is worse than that of the wafer surface, the epoxy resin glue is combined with the wafer surface and separated from the mold during demolding.

5. A novel wafer level imprinting process as claimed in claim 1, wherein, In step S7, the wafer to be baked is placed on a special tray or shelf in an oven, the tray or shelf with the wafer is placed in the oven, and the temperature and time are set according to the process requirements, and then the wafer is baked until the baking is completed.

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