Substrate processing apparatus

Abstract

The invention provides a substrate processing device. The substrate processing device comprises a conveying block and a plurality of processing blocks. The conveying block is provided with a conveying device used for conveying the substrate. The plurality of processing blocks are disposed adjacent to the transport block and process the substrate transported by the transport device. In addition, each processing block includes a liquid processing assembly and a drying assembly. The liquid processing unit performs a liquid film forming process for forming a liquid film on the upper surface of the substrate. The drying assembly performs supercritical drying treatment, and the supercritical drying treatment enables the substrate after the liquid film forming treatment to be in contact with a treatment fluid in a supercritical state, so that the substrate after the liquid film forming treatment is dried. The liquid processing unit and the drying unit included in the same processing block are arranged on the same side with respect to the moving direction of the conveying device of the conveying block. The present invention enables a series of substrate treatments including liquid treatments and supercritical drying treatments to be optimized.

Description

[0001] This application is a divisional application of application No. 201811139512.0, filed on September 28, 2018, entitled "Substrate processing apparatus". TECHNICAL FIELD

[0002] Embodiments of the present application relate to a technology for removing liquid adhering to the surface of a substrate using a processing fluid in a supercritical state. BACKGROUND

[0003] Conventionally, a supercritical drying process is known in which, after a surface of a substrate such as a semiconductor wafer is processed with a liquid, the substrate in a state in which the surface is wetted with the liquid is brought into contact with a supercritical fluid to dry the substrate.

[0004] As a substrate processing apparatus that performs the supercritical drying process, a substrate processing apparatus is disclosed in Patent Literature 1 in which a first chamber that performs liquid processing on a substrate and a second chamber that performs a supercritical drying process on the substrate processed with the liquid are arranged opposite each other across a transport region of the substrate.

[0005] PRIOR ART DOCUMENTS

[0006] PATENT LITERATURE

[0007] Patent Literature 1: Japanese Patent No. 5497114 SUMMARY OF THE INVENTION

[0008] PROBLEMS TO BE SOLVED BY THE INVENTION

[0009] However, in the above-described prior art, there is room for improvement in terms of optimizing a series of substrate processing including liquid processing and supercritical drying processing.

[0010] For example, in the substrate processing apparatus described in Patent Literature 1, a transport robot arranged in the transport region takes out the substrate processed with the liquid from the first chamber, rotates around the θ axis, and feeds the substrate processed with the liquid into the second chamber. Therefore, when the transport robot rotates around the θ axis, there is a possibility that the liquid on the substrate is flung off from the substrate, which can affect the supercritical drying process.

[0011] An object of one embodiment of the present application is to provide a substrate processing apparatus that can optimize a series of substrate processing including liquid processing and supercritical drying processing.

[0012] TECHNICAL SOLUTION FOR SOLVING THE PROBLEMS

[0013] A substrate processing apparatus according to an embodiment includes a transport block and a plurality of processing blocks. The transport block is provided with a transport device for transporting a substrate. The plurality of processing blocks are provided adjacent to the transport block and perform processing on the substrate transported by the transport device. In addition, each of the processing blocks includes a liquid processing module and a drying module. The liquid processing module performs a liquid film forming process of forming a liquid film on an upper surface of the substrate. The drying module performs a supercritical drying process of drying the substrate after the liquid film forming process by bringing the substrate after the liquid film forming process into contact with a processing fluid in a supercritical state. Moreover, the liquid processing module and the drying module included in the same processing block are disposed on the same side with respect to a moving direction of the transport device of the transport block.

[0014] Effects of Invention

[0015] According to an embodiment, a series of substrate processing including a liquid processing and a supercritical drying process can be optimized. BRIEF DESCRIPTION OF DRAWINGS

[0016] Figure 1 is a schematic cross-sectional view of a substrate processing system according to an embodiment, as viewed from above.

[0017] Figure 2 is a schematic cross-sectional view of a substrate processing system according to an embodiment, as viewed from the side.

[0018] Figure 3 is a flowchart showing steps of a series of substrate processing performed in a substrate processing system according to an embodiment.

[0019] Figure 4 is a diagram showing a transport step of a wafer.

[0020] Figure 5 is a diagram showing Figure 4 is a diagram showing an example of an operation of the transport device in step S3 shown in FIG. 3.

[0021] Figure 6 is a diagram showing an example of a structure of a liquid processing module.

[0022] Figure 7 is a diagram showing an example of a structure of a drying module.

[0023] Figure 8A is a schematic cross-sectional view of an interface region.

[0024] Figure 8B is a schematic cross-sectional view of an interface region.

[0025] Figure 9 is a diagram showing an example of a structure of an exhaust path of a processing block.

[0026] Figure 10Ais a schematic cross-sectional view of the substrate processing system of the embodiment as viewed from the rear.

[0027] Figure 10B is a schematic cross-sectional view of the substrate processing system of the embodiment as viewed from the rear.

[0028] Explanation of Reference Numerals

[0029] W wafer

[0030] 1 substrate processing system

[0031] 4 transport block

[0032] 5 processing block

[0033] 14 handover section

[0034] 15 transport area

[0035] 16 transport device

[0036] 17 liquid processing assembly

[0037] 18 drying assembly

[0038] 19 supply assembly

[0039] 181 processing area

[0040] 182 handover area DETAILED DESCRIPTION

[0041] Hereinafter, with reference to the drawings, a mode of a substrate processing apparatus for carrying out the present application (hereinafter, referred to as "embodiment") will be explained in detail. In addition, the substrate processing apparatus of the present application is not limited to this embodiment. Further, each embodiment can be appropriately combined within a range not to contradict the processing content. Further, the same reference numerals are attached to the same portions in each of the following embodiments, and the repeated explanation is omitted.

[0042] (1. Structure of substrate processing system)

[0043] First, with reference to Figure 1 and Figure 2 , the structure of the substrate processing system (one example of the substrate processing apparatus) of the embodiment will be explained. Figure 1 is a schematic cross-sectional view of the substrate processing system of the embodiment as viewed from above. In addition, Figure 2 is a schematic cross-sectional view of the substrate processing system of the embodiment as viewed from the side. Further, in the following content, in order to make the positional relationship clear, X axis, Y axis and Z axis orthogonal to each other are defined, and the Z axis positive direction is defined as the direction vertically upward.

[0044] As Figure 1As shown, the substrate processing system 1 includes an infeed / outfeed station 2 and a processing station 3. The infeed / outfeed station 2 and the processing station 3 are arranged adjacent to each other.

[0045] (Send in / out to station 2)

[0046] The delivery station 2 includes a carrier placement section 11 and a transport section 12. The carrier placement section 11 holds multiple carriers C that hold multiple semiconductor wafers W (hereinafter referred to as "wafers W") in a horizontal position.

[0047] The transport section 12 is arranged adjacent to the carrier placement section 11. The transport section 12 is equipped with a transport device 13 and a transfer section 14.

[0048] The transport device 13 is provided with a wafer holding mechanism for holding the wafer W. In addition, the transport device 13 can move in the horizontal and vertical directions and can rotate about the vertical axis, using the wafer holding mechanism to transport the wafer W between the carrier C and the junction 14.

[0049] (Processing Station 3)

[0050] Processing station 3 is located adjacent to transport unit 12. Processing station 3 includes transport block 4 and multiple processing blocks 5.

[0051] (Transportation Block 4)

[0052] Transport block 4 includes a transport area 15 and a transport device 16. The transport area 15 is, for example, a cuboid region extending along the arrangement direction (X-axis direction) of the inlet / outlet station 2 and the processing station 3. The transport device 16 is arranged in the transport area 15.

[0053] The transport device 16 is equipped with a wafer holding mechanism for holding the wafer W. In addition, the transport device 16 is capable of moving in the horizontal and vertical directions and rotating about the vertical axis, and uses the wafer holding mechanism to transport the wafer W between the transfer section 14 and the multiple processing blocks 5.

[0054] (Configuration for processing block 5)

[0055] Multiple processing blocks 5 are arranged adjacent to the transport area 15 on both sides of the transport area 15. Specifically, the multiple processing blocks 5 are arranged on one side (positive Y-axis side) and the other side (negative Y-axis side) of the transport area 15 in a direction orthogonal to the arrangement direction (X-axis direction) of the inlet / outlet station 2 and the processing station 3.

[0056] In addition, such as Figure 2 As shown, multiple processing blocks 5 are arranged in multiple layers along the vertical direction. In this embodiment, the number of layers of the multiple processing blocks 5 is 3, but the number of layers of the multiple processing blocks 5 is not limited to 3.

[0057] As described above, in the substrate processing system 1 of the embodiment, a plurality of processing blocks 5 are arranged in multiple layers on both sides of the transport block 4. Thus, the transport of the wafer W between the processing block 5 arranged in each layer and the handoff section 14 is performed by the transport device 16 arranged in the transport block 4.

[0058] (Internal structure of processing block 5)

[0059] Each processing block 5 includes a liquid processing assembly 17, a drying assembly 18, and a supply assembly 19.

[0060] The liquid processing assembly 17 performs a cleaning process of cleaning the upper surface of the wafer W, i.e., the pattern-formed surface. In addition, the liquid processing assembly 17 performs a liquid film forming process of forming a liquid film on the upper surface of the wafer W after the cleaning process. The structure of the liquid processing assembly 17 will be described later.

[0061] The drying assembly 18 performs a supercritical drying process on the wafer W after the liquid film forming process. Specifically, the drying assembly 18 dries the wafer W after the film forming process by bringing the wafer W into contact with a processing fluid in a supercritical state. The structure of the drying assembly 18 will be described later.

[0062] The supply assembly 19 supplies the processing fluid to the drying assembly 18. Specifically, the supply assembly 19 is provided with a supply device group including a flow meter, a flow regulator, a back pressure valve, a heater, and the like, and a housing that accommodates the supply device group. In the embodiment, the supply assembly 19 supplies CO2 as the processing fluid to the drying assembly 18.

[0063] The liquid processing assembly 17, the drying assembly 18, and the supply assembly 19 are arranged along the transport region 15 (i.e., in the X-axis direction). Among the liquid processing assembly 17, the drying assembly 18, and the supply assembly 19, the liquid processing assembly 17 is arranged closest to the in-out station 2, and the supply assembly 19 is arranged farthest from the in-out station 2.

[0064] As described above, each processing block 5 is provided with one liquid processing assembly 17, one drying assembly 18, and one supply assembly 19. That is, the same number of liquid processing assemblies 17, transport devices 16, and supply assemblies 19 are provided in the substrate processing system 1.

[0065] In addition, the drying assembly 18 includes a processing region 181 that performs the supercritical drying process, and a handoff region 182 that performs the handoff of the wafer W between the transport block 4 and the processing region 181. The processing region 181 and the handoff region 182 are arranged along the transport region 15.

[0066] Specifically, among the processing region 181 and the transfer region 182, the transfer region 182 is arranged on the side closer to the liquid processing assembly 17 than the processing region 181. That is, in each processing block 5, the liquid processing assembly 17, the transfer region 182, the processing region 181, and the supply assembly 19 are arranged in this order along the conveyance region 15.

[0067] (CONTROL DEVICE 6)

[0068] The substrate processing system 1 is provided with a control device 6. The control device 6 is, for example, a computer, and is provided with a control section 61 and a storage section 62.

[0069] The control section 61 includes a microcomputer having a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), an input / output port, and the like, and various circuits. The CPU of the microcomputer realizes control of the conveyance devices 13, 16, the liquid processing assembly 17, the drying assembly 18, the supply assembly 19, and the like, by reading and executing a program stored in the ROM.

[0070] Further, the program is stored in a storage medium that is readable by a computer, and can be installed from the storage medium to the storage section 62 of the control device 6. As the storage medium that is readable by a computer, there are, for example, a hard disk (HD), a floppy disk (FD), a compact disc (CD), a magneto-optical disk (MO), a memory card, and the like.

[0071] The storage section 62 can be realized by, for example, a semiconductor storage element such as a RAM, a Flash Memory, or the like, or a storage device such as a hard disk, an optical disk, or the like.

[0072] (2. Conveyance Flow)

[0073] Next, the conveyance flow of the wafer W in the substrate processing system 1 described above will be described with reference to Figures 3-5 . Figure 3 is a flowchart showing the steps of a series of substrate processing performed in the substrate processing system 1 of the embodiment. Further, Figure 4 is a view showing the steps of the conveyance of the wafer W. Further, Figure 5 is a view showing an example of the operation of the conveyance device 16 in the step S3 shown in Figure 4 . Further, a series of substrate processing shown in Figure 3 is performed in accordance with the control of the control section 61.

[0074] As shown in Figure 3 , in the substrate processing system 1, first, a wafer W is conveyed into the system (step S101). In the conveyance into the system, the conveyance device 13 (refer to Figure 1) from the carrier C and placed on the interface portion 14 (refer to Figure 4 Step S1). Next, the transport device 16 (refer to Figure 1 ) takes out the wafer W from the interface portion 14 and feeds it into the liquid processing assembly 17 (refer to Figure 4 Step S2).

[0075] Next, in the substrate processing system 1, the wafer W is subjected to a cleaning process in the liquid processing assembly 17 (Step S102). The liquid processing assembly 17 removes particles, natural oxide films, and the like from the upper surface of the wafer W by supplying various processing liquids to the pattern formation surface, i.e., the upper surface, of the wafer W.

[0076] Next, in the substrate processing system 1, the wafer W is subjected to a liquid film formation process in the liquid processing assembly 17 (Step S103). The liquid processing assembly 17 forms a liquid film of IPA liquid on the upper surface of the wafer W by supplying IPA liquid to the upper surface of the wafer W after the cleaning process.

[0077] The wafer W after the liquid film formation process is transported by the transport device 16 to the interface region 182 of the drying assembly 18 disposed in the same process block 5 (refer to Figure 4 Step S3).

[0078] Specifically, as shown in Figure 5 , the transport device 16 moves to a position directly opposite the liquid processing assembly 1 and causes the wafer holding mechanism to enter the liquid processing assembly 17 to take out the wafer W after the liquid film formation process from the liquid processing assembly 17 (refer to Figure 5 the upper drawing).

[0079] Next, the transport device 16 moves horizontally along the transport region 15, thereby transporting the wafer W after the liquid film formation process to a position directly opposite the interface region 182 of the drying assembly 18 (refer to Figure 5 the lower drawing). At this time, the transport device 16 maintains the state at the time of taking out the wafer W after the liquid film formation process from the liquid processing assembly 17, specifically, the state of causing the wafer holding mechanism to face the process block 5 that is the processing target, and slides in the horizontal direction.

[0080] Subsequently, the transport device 16 causes the wafer holding mechanism to enter the interface region 182 and interfaces the wafer W after the liquid film formation process to the drying assembly 18 (refer to Figure 5 the lower drawing). In addition, in Figure 5 , only the action of horizontal movement is illustrated, but in the case where the height at which the wafer W is placed in the liquid processing assembly 17 and the height at which the wafer W is placed in the interface region 182 differ from each other, control to vertically move the transport device 16 is applied in order to adjust the difference in height between them during the transport of the wafer W.

[0081] As described above, in the substrate processing system 1 of the embodiment, the liquid processing assembly 17 and the drying assembly 18 included in the same processing block 5 are arranged on the same side with respect to the moving direction of the transport device 16 of the transport block 4 (here, the horizontal direction (X-axis direction)). Thus, the optimization of the substrate processing can be achieved in terms of simplification and high speed of the transport operation. For example, in a case where the liquid processing assembly 17 and the drying assembly 18 are arranged on opposite sides with respect to the moving direction of the transport device 16 of the transport block 4, the transport device 16 needs to perform a rotation operation around the θ-axis (vertical axis) when transporting the wafer W after the liquid film forming processing from the liquid processing assembly 17 to the drying assembly 18. In contrast, in the substrate processing system 1 of the embodiment, the rotation operation is not needed. Thus, by performing the rotation operation around the θ-axis, the liquid film formed on the upper surface of the wafer W is less likely to be flung off from the wafer W. In addition, the transport time of the wafer W after the liquid film forming processing from the liquid processing assembly 17 to the drying assembly 18 can be shortened as compared to the case where the rotation operation is performed. Further, in the present specification, the "moving direction of the transport device 16" is the direction of movement to the horizontal direction (here, the X-axis direction) or the vertical direction (Z-axis direction), and does not include the advancing and retreating direction of the wafer holding mechanism (here, the Y-axis direction).

[0082] In addition, the transport device 16 transports the wafer W after the liquid film forming processing between the liquid processing assembly 17 and the drying assembly 18 included in the same processing block 5, and the liquid processing assembly 17 and the drying assembly 18 are arranged one-to-one in each processing block 5. Thus, for example, as compared to a substrate processing apparatus in which a plurality of drying assemblies are provided to one liquid processing assembly, the uniformization of the transport time of the wafer W after the liquid film forming processing from the liquid processing assembly 17 to the drying assembly 18 can be achieved.

[0083] That is, in a substrate processing apparatus in which a plurality of drying assemblies are provided to one liquid processing assembly, in a case where the wafer after the liquid film forming processing is transported to the drying assembly arranged near the liquid processing assembly, a deviation in the transport time occurs as compared to a case where the wafer after the liquid film forming processing is transported to the drying assembly arranged away from the liquid processing assembly. In contrast, in the substrate processing system 1 of the embodiment, the wafer W after the liquid film forming processing by one liquid processing assembly 17 is transported to one drying assembly 18 arranged in the same processing block 5 as the liquid processing assembly 17. Thus, a deviation in the transport time is less likely to occur.

[0084] Further, in each of the processing blocks 5, the interface region 182 of the drying assembly 18 is arranged in a position adjacent to the liquid processing assembly 17. Specifically, of the processing region 181 and the interface region 182 of the drying assembly 18, the interface region 182 is arranged in a position close to the liquid processing assembly 17, and the processing region 181 is arranged in a position farther from the liquid processing assembly 17 than the interface region 182. Thus, compared to a case where the processing region 181 of the processing region 181 and the interface region 182 is arranged in a position close to the liquid processing assembly 17, it is possible to further shorten the transport time of the wafer W after the liquid film formation processing.

[0085] Further, the processing region 181 and the interface region 182 are arranged along the transport block 4. Thus, for example, compared to a case where the processing region 181 of the processing region 181 and the interface region 182 is arranged in a position farther from the liquid processing assembly 17 than the interface region 182, it is possible to easily perform access to the interface region 182 at the time of maintenance.

[0086] Further, a plurality of the processing blocks 5 are arranged in multiple layers (refer to Figure 2 ). Thus, the substrate processing system 1 according to the embodiment makes it possible to suppress an increase in the occupied space.

[0087] Returning to Figure 3 , the description of the series of substrate processing is continued. The wafer W after the liquid film formation processing, which is transported to the interface region 182, is transported from the interface region 182 to the processing region 181 (refer to step S4 of Figure 4 ). Then, in the substrate processing system 1, supercritical drying processing is performed in the processing region 181 (step S104). In the supercritical drying processing, the drying assembly 18 dries the wafer W after the liquid film formation processing by bringing the wafer W after the liquid film formation processing into contact with a processing fluid in a supercritical state.

[0088] Next, the substrate processing system 1 performs the delivery processing (step S105). In the delivery processing, first, the wafer W after the supercritical drying processing is transported from the processing region 181 to the interface region 182 (refer to step S5 of Figure 4 ). After that, the transport device 16 takes out the wafer W after the supercritical drying processing from the interface region 182 and transports it to the interface section 14 (refer to step S6 of Figure 4 ). After that, the transport device 13 takes out the wafer W after the supercritical drying processing from the interface section 14 and transports it to the carrier C (refer to step S7 of Figure 4 ). When the delivery processing ends, the series of substrate processing for one wafer W ends.

[0089] As Figure 1As shown, in the substrate processing system 1 of this embodiment, the processing block 5 disposed on one side of the transport block 4 and the processing block 5 disposed on the other side of the transport block 4 are symmetrically arranged across the transport block 4 when viewed from above. Therefore, when observing a layer, it is possible to... Figure 4 The transport time of the wafer W in steps S2 to S6 is consistent in both the processing block 5 located on one side of the transport block 4 and the processing block 5 located on the other side of the transport block 4.

[0090] (3. Structure of the liquid treatment component)

[0091] Next, refer to Figure 6 This describes the structure of the liquid treatment component 17. Figure 6 This is a diagram illustrating an example of the structure of the liquid processing assembly 17. The liquid processing assembly 17 is, for example, configured as a monolithic cleaning device that cleans wafers W one by one by rotating them.

[0092] like Figure 6 As shown, the liquid treatment assembly 17 holds the wafer W in a substantially horizontal position by a wafer holding mechanism 25 disposed within the outer chamber 23 forming the processing space, and rotates the wafer holding mechanism 25 about a vertical axis to rotate the wafer W. Furthermore, the liquid treatment assembly 17 inserts a nozzle arm 26 above the rotating wafer W and supplies liquid medicine or rinsing liquid from a liquid nozzle 26a disposed at the front end of the nozzle arm 26 in a predetermined sequence, thereby performing cleaning treatment on the upper surface of the wafer W.

[0093] Furthermore, in the liquid processing assembly 17, a liquid supply path 25a is also formed inside the wafer holding mechanism 25. Moreover, the lower surface of the wafer W can be cleaned using the liquid or rinsing fluid supplied by the liquid supply path 25a.

[0094] The cleaning process, for example, initially uses SC1 solution (a mixture of ammonia and hydrogen peroxide aqueous solution) as an alkaline solution to remove particulate and organic contaminants, followed by rinsing with deionized water (hereinafter referred to as "DIW"). Next, the naturally formed oxide film is removed using a dilute hydrofluoric acid aqueous solution (hereinafter referred to as "DHF") as an acidic solution, followed by rinsing with DIW.

[0095] The aforementioned liquid medications can be received by the outer chamber 23 and the inner cup 24 disposed within the outer chamber 23, and can be discharged from the drain port 23a at the bottom of the outer chamber 23 and the drain port 24a at the bottom of the inner cup 24. Furthermore, the atmosphere inside the outer chamber 23 can be vented from the vent port 23b at the bottom of the outer chamber 23.

[0096] The liquid film forming process is performed after the rinsing process in the cleaning process. Specifically, the liquid processing assembly 17 supplies IPA liquid to the upper and lower surfaces of the wafer W while rotating the wafer holding mechanism 25. Thus, the DIW remaining on the two surfaces of the wafer W is replaced with IPA. Thereafter, the liquid processing assembly 17 slowly stops the rotation of the wafer holding mechanism 25.

[0097] The wafer W on which the liquid film of IPA liquid is formed on the upper surface is delivered to the transport device 16 by a not-shown delivery mechanism provided to the wafer holding mechanism 25, and is delivered out of the liquid processing assembly 17. The liquid film formed on the wafer W prevents pattern collapse due to evaporation (vaporization) of the liquid on the upper surface of the wafer W during the transport of the wafer W from the liquid processing assembly 17 to the drying assembly 18 and the operation of the wafer W into the drying assembly 18.

[0098] (4. Structure of the drying assembly)

[0099] Next, the structure of the drying assembly 18 will be described with reference to Figure 7 Figure 7 is a schematic perspective view showing an example of the structure of the drying assembly 18.

[0100] As shown in Figure 7 , the drying assembly 18 includes a processing container 31, a holding body 32, and a cover body 33.

[0101] The processing container 31 is, for example, a pressure container capable of forming a high-pressure environment of 16 to 20 MPa. The processing container 31 is disposed in a processing area 181 (see Figure 1 ) in which the supercritical drying process is performed in a processing space 31a inside the processing container 31. An opening 31b that communicates the processing space 31a and the delivery area 182 is formed in the side surface of the processing container 31 opposite to the delivery area 182 (see Figure 1 ).

[0102] The holding body 32 holds the wafer W in the horizontal direction. The cover body 33 supports the holding body 32. The cover body 33 is connected to a not-shown moving mechanism, and is moved horizontally together with the holding body 32 between the processing area 181 and the delivery area 182 by the moving mechanism. By moving to the processing area 181, the holding body 32 can be disposed in the processing space 31a of the processing container 31, and the cover body 33 closes the opening 31b of the processing space 31a.

[0103] ​The processing container 31 is provided with a supply port 35 and a discharge port 37. The supply port 35 is connected with a supply pipe 101 for circulating a processing fluid supplied to the processing space 31a. The supply pipe 101 is connected with the supply machine group of the supply assembly 19. The discharge port 37 is connected with a separate exhaust pipe 102 for circulating a processing fluid discharged from the processing space 31a.

[0104] The supply port 35 is provided at a side opposite to the side where the opening 31b is formed in the processing container 31. In addition, the discharge port 37 is provided at the bottom surface of the processing container 31. Further, Figure 7 One supply port 35 and one discharge port 37 are shown in the drawing, but the number of the supply port 35 and the discharge port 37 is not particularly limited.

[0105] The processing space 31a is provided with a supply head 38 and a discharge head 40. The supply head 38 is connected with the supply port 35 to supply a processing fluid to the processing space 31a. The discharge head 40 is connected with the discharge port 37 to discharge a processing fluid from the processing space 31a.

[0106] A plurality of supply ports 38a are provided in the supply head 38 in the longitudinal direction (Y-axis direction) of the supply head 38. The plurality of supply ports 38a are opened toward the opening 31b. A plurality of discharge ports 40a are provided in the discharge head 40 in the longitudinal direction (Y-axis direction) of the discharge head 40. The plurality of discharge ports 40a are opened toward the upper side.

[0107] The drying assembly 18 supplies a processing fluid from the plurality of supply ports 38a of the supply head 38 to the processing space 31a, and discharges the processing fluid in the processing space 31a via the plurality of discharge ports 40a of the discharge head 40. A damper that adjusts the amount of discharge of the processing fluid from the processing space 31a is provided in the discharge path of the processing fluid, and the amount of discharge of the processing fluid is adjusted by a regulator, so that the pressure in the processing space 31a can be adjusted to a desired pressure. Thus, a supercritical state of the processing fluid is maintained in the processing space 31a. Hereinafter, the processing fluid in the supercritical state is referred to as "supercritical fluid".

[0108] A laminar flow of the supercritical fluid that flows in a prescribed direction around the wafer W is formed in the processing space 31a. The laminar flow of the supercritical fluid flows, for example, from the supply head 38 over the wafer W along the upper surface of the wafer W toward the upper portion of the opening 31b. Also, the laminar flow of the supercritical fluid changes direction toward the lower side of the opening 31b, and flows toward the discharge head 40 through the vicinity of the opening 31b.

[0109] In this example of the laminar flow, the laminar flow of the supercritical fluid passes through the aperture 32a formed between the wafer W and the cover 33 in the holding body 32 in the inside of the processing space 31a.

[0110] The IPA liquid present on the patterning surface (upper surface) of wafer W gradually dissolves in the supercritical fluid through contact with a supercritical fluid under high pressure (e.g., 16 MPa), and is eventually replaced by the supercritical fluid. As a result, the gaps between the patterns are filled with supercritical fluid.

[0111] Subsequently, the drying assembly 18 reduces the pressure in the processing space 31a from a high-pressure state to atmospheric pressure. As a result, the supercritical fluid filling the gaps between the patterns changes to a normal state, i.e., a gaseous state, of the processing fluid.

[0112] As described above, after the IPA liquid present on the pattern forming surface is replaced with a supercritical fluid, the drying component 18 restores the supercritical fluid to a gaseous processing fluid, thereby removing the IPA liquid from the pattern forming surface to dry the pattern forming surface.

[0113] Supercritical fluids have lower viscosity and higher dissolving power than liquids (such as IPA liquid), and there is no interface between supercritical fluids and liquids or gases in equilibrium. Therefore, by performing supercritical drying, liquids can be dried without being affected by surface tension. That is, pattern collapse during the drying process can be suppressed.

[0114] Furthermore, in this embodiment, IPA liquid is used as the liquid for preventing dryness and CO2 is used as the processing fluid. However, liquids other than IPA can also be used as the liquid for preventing dryness and fluids other than CO2 can also be used as the processing fluid.

[0115] like Figure 7 As shown, the processing container 31 has a first protrusion 31c and a second protrusion 31d that protrude further inward in the opening direction (in this case, the negative X-axis direction) than the opening 31b. The first protrusion 31c protrudes from the lower part of the opening 31b in the negative X-axis direction, and the second protrusion 31d protrudes from the upper part of the opening 31b in the negative X-axis direction.

[0116] A plurality of (two in this case) first insertion holes 31e are formed in the first protrusion 31c, connecting the upper and lower surfaces of the first protrusion 31c. In addition, a plurality of (two in this case) second insertion holes 31f are formed in the second protrusion 31d at positions opposite to the plurality of first insertion holes 31e, connecting the upper and lower surfaces of the second protrusion 31d.

[0117] In addition, the drying assembly 18 is provided with a plurality of (two in this case) locking members 42. The locking members 42 are respectively inserted into a plurality of first through holes 31e formed in the first protrusion 31c.

[0118] Here, refer to Figure 8A and Figure 8Billustrating the operation of the locking member 42. Figure 8A and Figure 8B is a schematic cross-sectional view of the interface region 182. Furthermore, Figure 8A indicates a state in which the holding body 32 and the cover body 33 are arranged in the interface region 182, Figure 8B indicates a state in which the holding body 32 and the cover body 33 are arranged in the processing region 181.

[0119] As Figure 8A illustrated, the locking member 42 is connected to a lifting mechanism 43 that lifts the locking member 42.

[0120] As Figure 8B illustrated, the drying assembly 18 first moves the holding body 32 and the cover body 33 using a movement mechanism not shown, and closes the processing space 31a with the cover body 33. Then, the drying assembly 18 lifts the locking member 42 using the lifting mechanism 43, and brings the locking member 42 into a state in which it is inserted into the second insertion hole 31f formed in the second protruding portion 31d.

[0121] The locking member 42 presses the cover body 33 against the processing space 31a against the internal pressure caused by the supercritical fluid supplied to the processing space 31a. Thus, the processing space 31a can be maintained in a closed state with the cover body 33.

[0122] The interface region 182 is covered by a housing 821. The housing 821 accommodates the cover body 33 and the holding body 32.

[0123] The housing 821 is connected to a first exhaust pipe 201 for flowing the atmosphere exhausted from the housing 821. In addition, the second protruding portion 31d is connected to a second exhaust pipe 202. Specifically, the second exhaust pipe 202 is connected to the second insertion hole 31f via a buffer 223. The buffer 223 has a larger internal space than the second insertion hole 31f.

[0124] The second exhaust pipe 202 and the buffer 223 are provided to exhaust the movement space of the locking member 42 (specifically, the space between the first insertion hole 31e and the second insertion hole 31f and the first protruding portion 31c and the second protruding portion 31d). In the above space, there is a possibility that particles are generated due to the friction between the locking member 42 and the cover body 33 or the processing container 31 when the locking member 42 is lifted or lowered. According to the drying assembly 18, by exhausting the movement space of the locking member 42 using the second exhaust pipe 202 and the buffer 223, the particles generated in conjunction with the lifting and lowering of the locking member 42 can be efficiently exhausted to the outside of the interface region 182.

[0125] Further, in the supercritical drying process, the process container 31 becomes a high-temperature state of, for example, 100 degrees or so, and an upward airflow is generated in the second insertion hole 31f. Assuming that, in the case where the second exhaust pipe 202 is directly connected to the second insertion hole 31f, the airflow of the exhaust gas collides with the upward airflow to generate turbulence of the airflow. In this regard, by providing the buffer 223, the airflow of the exhaust gas does not directly collide with the upward airflow, and thus turbulence of the airflow is less likely to occur. Therefore, the particles can be more efficiently exhausted to the outside.

[0126] (5. Structure of exhaust path of process block)

[0127] Next, the structure of the exhaust path of the process block 5 will be described with reference to Figure 9 , which is a view showing an example of the structure of the exhaust path of the process block 5. Figure 9

[0128] As shown in Figure 9 , each process block 5 is divided into a liquid treatment block 51 in which the liquid treatment assembly 17 is arranged, and a drying block 52 in which the drying assembly 18 and the supply assembly 19 are arranged. The liquid treatment block 51 and the drying block 52 are separated by a partition wall. Further, a plurality of drying blocks 52 arranged in multiple layers are each separated by a partition wall.

[0129] The first common exhaust pipe 100 and the second common exhaust pipe 200 are provided in the drying block 52. The first common exhaust pipe 100 and the second common exhaust pipe 200 extend in the vertical direction so as to pass through a plurality of process blocks 5 arranged in multiple layers. That is, the first common exhaust pipe 100 and the second common exhaust pipe 200 are common to a plurality of process blocks 5 arranged in multiple layers. Specifically, one of the first common exhaust pipe 100 and the second common exhaust pipe 200 is arranged on each of the sides of the conveyance block 4.

[0130] The second common exhaust pipe 200, the drying assembly 18, the supply assembly 19, and the first common exhaust pipe 100 are arranged in the above order from the liquid treatment block 51 side. That is, the first common exhaust pipe 100 is arranged at a position close to the supply assembly 19 among the drying assembly 18 and the supply assembly 19, and the second common exhaust pipe 200 is arranged at a position close to the drying assembly 18 among the drying assembly 18 and the supply assembly 19.

[0131] The first common exhaust pipe 100 is used to exhaust the supercritical fluid from the drying assembly 18. Specifically, the first common exhaust pipe 100 is connected to independent exhaust pipes 102 provided in each layer of a plurality of drying blocks 52 arranged in multiple layers. The supercritical fluid supplied from the supply assembly 19 to the process container 31 of the drying assembly 18 via the supply pipe 101 flows out to the first common exhaust pipe 100 through the independent exhaust pipes 102, and is exhausted to the outside of the process block 5 from the first common exhaust pipe 100.

[0132] ​Further, the first common exhaust pipe 100 is connected with a block exhaust pipe 103 for exhausting the atmosphere in each of the drying blocks 52. The block exhaust pipe 103 is provided with a pump 131 and a regulator 132 for regulating the opening degree of the block exhaust pipe 103.

[0133] The block exhaust pipe 103, the pump 131 and the regulator 132 are provided for each layer of the plurality of drying blocks 52 arranged in a plurality of layers. As described above, in the substrate processing system 1, each layer of the plurality of drying blocks 52 arranged in a plurality of layers is partitioned, and the atmosphere in each of the drying blocks 52 is individually exhausted. Since the processing fluid heated to a prescribed temperature is supplied to the processing region 181, there is a possibility that the temperature of the atmosphere differs among the drying blocks 52, but by being configured as described above, the influence caused by the temperature difference of the atmosphere among the drying blocks 52 can be reduced.

[0134] Further, in the substrate processing system 1, one first common exhaust pipe 100 is connected with the independent exhaust pipe 102 for exhausting the supercritical fluid or the processing fluid from the processing vessel 31 and the block exhaust pipe 103 for exhausting the atmosphere in the drying blocks 52. Thereby, for example, when the supercritical fluid or the processing fluid is exhausted from the processing vessel 31, by regulating the exhaust amount of the atmosphere in the drying blocks 52 using the regulator 132 of the block exhaust pipe 103, the pressure fluctuation in the first common exhaust pipe 100 accompanying the exhaustion of the supercritical fluid or the processing fluid can be suppressed.

[0135] The block exhaust pipe 103 has a shape protruding from the first common exhaust pipe 100. Thereby, the supercritical fluid or the processing fluid exhausted from the processing vessel 31 can be suppressed from flowing backward in the first common exhaust pipe 100 and flowing out from the block exhaust pipe 103.

[0136] Next, the second common exhaust pipe 200 will be described. The second common exhaust pipe 200 is for exhausting the handoff region 182.

[0137] Specifically, the second common exhaust pipe 200 is connected with the first exhaust pipe 201 described above. The first exhaust pipe 201 is provided with a pump 211 and a regulator 212 for regulating the opening degree of the first exhaust pipe 201. The second common exhaust pipe 200 is connected with the first exhaust pipe 201 arranged in each layer.

[0138] One end of the second exhaust pipe 202 is connected with a buffer 223, and the other end is connected with the first exhaust pipe 201. The second exhaust pipe 202 is provided with a pump 221 and a regulator 222 for regulating the opening degree of the second exhaust pipe 202. Further, an opening 822 is provided in the surface of the housing 821 on the side of the transport block 4.

[0139] The air (clean air) in the transport block 4 flows into the housing 821 from the opening 822. The air that has flowed into the interior of the housing 821 flows out to the second common exhaust pipe 200 through the first exhaust pipe 201 or the second exhaust pipe 202, and is exhausted to the outside of the processing block 5 from the second common exhaust pipe 200. Further, the action of feeding and discharging the wafer W into and out of the housing 821 by the transport device 16 is also performed via the opening 822.

[0140] As described above, the substrate processing system 1 of the embodiment includes: a first exhaust path (the first common exhaust pipe 100 and the independent exhaust pipe 102) for high pressure, which exhausts the processing fluid in a supercritical state from the processing region 181; and a second exhaust path (the second common exhaust pipe 200, the first exhaust pipe 201, and the second exhaust pipe 202) for normal pressure, which exhausts the interface region 182.

[0141] Further, an opening 521 is provided on the side of the transport block 4 of the drying block 52. The opening 521 is connected to the third exhaust pipe 203. One end of the third exhaust pipe 203 is connected to the opening 521, and the other end is connected to the first exhaust pipe 201. An adjuster 232 for adjusting the opening of the third exhaust pipe 203 is provided in the third exhaust pipe 203.

[0142] The opening 521, the third exhaust pipe 203, and the adjuster 232 are provided in order to suppress turbulence of the air flow in the transport block 4, for example, when the drying assembly 18 is maintained.

[0143] With regard to this point, reference is made to Figure 10A and Figure 10B Figure 10A and Figure 10B are schematic cross-sectional views of the substrate processing system 1 of the embodiment as viewed from the rear.

[0144] As shown in Figure 10A , an FFU 401 is arranged in the upper portion of the transport region 15 in the transport block 4. Further, a fan 402 is arranged in the lower portion of the transport region 15. A down flow is formed in the transport region 15 by the FFU 401 and the fan 402.

[0145] A shutter 823 that can close / open the opening 822 and a shutter 522 that can close / open the opening 521 are provided in each drying block 52.

[0146] ​In the normal state of performing a series of substrate processing operations, the control unit 61 of the substrate processing system 1 performs a series of substrate processing operations with the switch 823 open and the switch 522 closed. Therefore, in the normal state, air (clean air) in the transport area 15 of the transport block 4 flows into the interior of the housing 821 through the opening 822. The air flowing into the interior of the housing 821 is discharged to the outside through the first exhaust pipe 201 and the second common exhaust pipe 200.

[0147] On the other hand, such as Figure 10B As shown, when any drying block 52 is transferred to a maintenance state, the control unit 61 closes the switch 823 of the drying block 52 in the maintenance state and opens the switch 522. As a result, air in the transport area 15 flows into the third exhaust pipe 203 through the opening 521. At this time, the control unit 61 adjusts the regulator 232 (see reference...). Figure 9 This allows air to flow into the third exhaust pipe 203 at the same flow rate as the air flowing into the housing 821 under normal conditions. The air flowing into the third exhaust pipe 203 is then discharged to the outside via the first exhaust pipe 201 and the second common exhaust pipe 200.

[0148] In addition, maintenance status refers to a state in which processing in the drying block 52 is temporarily suspended, for example, for cleaning and inspection of the drying block 52, or due to an anomaly that has occurred in the drying block 52.

[0149] As described above, in the maintenance state where the opener 823 of opening 822 is closed, air is drawn into the transport area 15 through opening 521 instead of opening 822, thereby maintaining a constant level of gas supply / exhaust balance within the transport area 15. Therefore, even when the drying block 52 is in the maintenance state, airflow turbulence is unlikely to occur within the transport area 15, thus preventing, for example, uneven drying of the liquid film on the wafer W after liquid film formation due to airflow turbulence.

[0150] As described above, the substrate processing system 1 (one example of a substrate processing apparatus) of the embodiment includes a transport block 4 and a plurality of processing blocks 5. The transport block 4 is provided with a transport device 16 for transporting a wafer W (one example of a substrate). The plurality of processing blocks 5 are provided adjacent to the transport block 4, and process the wafer W transported by the transport device 16. In addition, each of the processing blocks 5 includes a liquid processing assembly 17 and a drying assembly 18. The liquid processing assembly 17 performs a liquid film forming process of forming a liquid film on the upper surface of the wafer W. The drying assembly 18 performs a supercritical drying process of drying the wafer W after the liquid film forming process by bringing the wafer W after the liquid film forming process into contact with a processing fluid in a supercritical state. Moreover, the liquid processing assembly 17 and the drying assembly 18 included in the same processing block 5 are arranged on the same side with respect to the moving direction of the transport device 16 of the transport block 4.

[0151] Therefore, according to the substrate processing system 1 of the embodiment, it is possible to optimize a series of substrate processing including the liquid film forming process and the supercritical drying process.

[0152] Further effects and modifications can be readily derived by those skilled in the art, which should be construed as being within the scope of the present application. Therefore, the present application should not be limited to the particular details and representative embodiments described above, as various modifications can be made in the framework of the concept of the general inventive concept defined by the scope of the appended claims and their equivalents.

Claims

1. A substrate processing apparatus characterized by comprising: including: a transport block configured with a transport device for transporting a substrate; and a plurality of drying blocks configured adjacent to the transport block, the drying blocks including a drying assembly that performs a supercritical drying process that dries a substrate having a liquid adhered to a surface by bringing the substrate into contact with a processing fluid in a supercritical state, the substrate processing apparatus further including: a common exhaust pipe shared by at least two of the drying blocks, for exhausting the processing fluid from the drying assembly provided in each of the at least two drying blocks; and a block exhaust pipe provided for each of the at least two drying blocks, for exhausting an atmosphere within the drying block to the common exhaust pipe, the block exhaust pipe including a regulating portion for regulating an opening degree of the block exhaust pipe.

2. The substrate processing apparatus according to claim 1, wherein: the at least two drying blocks are configured in multiple layers in a vertical direction, the common exhaust pipe extends in the vertical direction in a manner that penetrates the at least two drying blocks.

3. The substrate processing apparatus according to claim 1, wherein: the plurality of drying blocks include: at least two one-side drying blocks configured on one side of the transport block; and at least two other-side drying blocks configured on the other side of the transport block, the common exhaust pipe includes: a one-side common exhaust pipe shared by the at least two one-side drying blocks; and an other-side common exhaust pipe shared by the at least two other-side drying blocks.

4. The substrate processing apparatus according to any one of claims 1 to 3, wherein: the block exhaust pipe further includes a pump provided on an upstream side from the regulating portion.

5. The substrate processing apparatus according to any one of claims 1 to 4, wherein: the drying assembly includes: a processing region that performs the supercritical drying process; and a transfer region that transfers the substrate between the transport block and the processing region, the substrate processing apparatus includes, in addition to a first common exhaust pipe that is the common exhaust pipe, a second common exhaust pipe that is a common exhaust pipe shared by at least two of the drying blocks, for exhausting an atmosphere of the transfer region included in the drying assembly provided in each of the at least two drying blocks.

6. The substrate processing apparatus according to claim 5, wherein: the drying block includes: a second opening separately provided from a first opening for loading and unloading the substrate, the second opening being provided on a surface on the transport block side; a shutter that closes and opens the second opening; and a connection pipe that connects the second opening and the second common exhaust pipe.

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