Solar cell and method of manufacturing the same, photovoltaic module

Abstract

The present disclosure relates to the field of photovoltaics, and provides a solar cell, a preparation method thereof, and a photovoltaic module, which can at least improve the performance of the solar cell. The preparation method of the solar cell comprises: providing a substrate, the substrate having opposite first and second sides, the substrate comprising a first region and a second region separated from each other, the first side having a doped semiconductor layer and a doped source layer; performing a modification treatment on the doped source layer corresponding to the first region, the modification treatment comprising n times of laser scanning. Wherein, the n times of laser scanning satisfy: the xth laser scanning corresponds to scanning along the xth scanning line, the (x+1)th laser scanning corresponds to scanning along the (x+1)th scanning line, and the yth laser scanning corresponds to scanning along the yth scanning line, wherein the yth scanning line is located between the xth scanning line and the (x+1)th scanning line, 1≤x

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the field of photovoltaics, and in particular to a solar cell, a method for manufacturing the same, and a photovoltaic module. BACKGROUND

[0002] With the gradual depletion of fossil energy, solar energy is used more and more widely as a new energy alternative. A solar cell is a device that converts the light energy of the sun into electrical energy. The solar cell utilizes the photovoltaic principle to generate carriers, and then uses a first electrode to lead out the carriers, thereby facilitating the effective utilization of electrical energy.

[0003] In a method for manufacturing a solar cell, in order to modify a part of the film layers in the solar cell, the film layers are scanned by laser multiple times. However, in the method for manufacturing a solar cell in the related art, there are certain problems in the setting of laser scanning, which makes the performance of the finally manufactured solar cell poor. SUMMARY

[0004] The present disclosure provides a solar cell, a method for manufacturing the same, and a photovoltaic module, which at least facilitates improving the performance of the solar cell.

[0005] According to some embodiments of the present disclosure, the present disclosure provides, in one aspect, a method for manufacturing a solar cell. The method includes: providing a substrate having opposite first and second sides, the substrate including a first region and a second region that are separate from each other, the first side having a doped semiconductor layer and a doped source layer, the doped source layer being on a surface of the doped semiconductor layer facing away from the second side; modifying the doped source layer corresponding to the first region, the modification including n laser scans, wherein the n laser scans satisfy: an xth laser scan corresponds to scanning along an xth scan line, an (x+1)th laser scan corresponds to scanning along an (x+1)th scan line, and a yth laser scan corresponds to scanning along a yth scan line, wherein the yth scan line is between the xth scan line and the (x+1)th scan line, 1≤x

[0006] In some embodiments, the third scan line is between the first scan line and the second scan line.

[0007] In some embodiments, the fourth scan line is on a side of the second scan line facing away from the third scan line.

[0008] In some embodiments, the third scan line is located on a side of the first scan line away from the second scan line, or the third scan line is located on a side of the second scan line away from the first scan line.

[0009] In some embodiments, the third scan line is located on a side of the first scan line away from the second scan line, and a fourth scan line is located between the first scan line and the second scan line; or the third scan line is located on a side of the second scan line away from the first scan line, the fourth scan line is located between the first scan line and the second scan line, and a fifth scan line is located between the second scan line and the third scan line.

[0010] In some embodiments, an x-th scan region and an x+1-th scan region are spaced apart, wherein the x-th scan region is a region of the x-th laser scanning, and the x+1-th scan region is a region of the x+1-th laser scanning.

[0011] In some embodiments, a y-th scan region of the y-th laser scanning is located in a spacing region between the x-th scan region and the x+1-th scan region, and an area ratio of the y-th scan region to an area of the spacing region is within a range from 80% to 100%.

[0012] In some embodiments, along a first direction, a distance between the x-th scan region and the x+1-th scan region is greater than 0 and less than or equal to 520 μm.

[0013] In some embodiments, a y-th scan region of the y-th laser scanning partially overlaps with the x-th scan region and partially overlaps with the x+1-th scan region.

[0014] In some embodiments, along a first direction, a width of an overlapping part of the y-th scan region and the x-th scan region is a first width W1, a width of the x-th scan region is a second width W2, the first width W1 and the second width W2 satisfy: 0 < W1 / W2 < 0.5; along the first direction, a width of an overlapping part of the y-th scan region and the x+1-th scan region is a third width W3, a width of the x+1-th scan region is a fourth width W4, the third width W3 and the fourth width W4 satisfy: 0 < W3 / W4 < 0.5.

[0015] In some embodiments, 160 μm ≤ W1 ≤ 220 μm; 100 μm ≤ W2 ≤ 500 μm; 160 μm ≤ W3 ≤ 220 μm; 100 μm ≤ W4 ≤ 500 μm.

[0016] In some embodiments, the region of the y-th laser scanning is a y-th scanning area, in the first direction, a width of the x-th scanning area is the same as a width of the x+1-th scanning area, and the width of the x-th scanning area is the same as a width of the y-th scanning area.

[0017] In some embodiments, the power of the y-th laser scanning is less than or equal to the power of the x-th laser scanning, and the power of the y-th laser scanning is less than or equal to the power of the x+1-th laser scanning.

[0018] In some embodiments, the power of the x-th laser scanning is 1000W-2000W, the power of the x+1-th laser scanning is 1000W-2000W, and the power of the y-th laser scanning is 1000W-2000W.

[0019] In some embodiments, the method for removing the doped source layer and the doped semiconductor layer corresponding to the first area comprises: removing the doped source layer corresponding to the first area by using a first wet process; and removing the doped semiconductor layer corresponding to the first area by using a second wet process.

[0020] According to some embodiments of the present disclosure, another aspect of the embodiments of the present disclosure further provides a solar cell, which is prepared by the method for preparing a solar cell according to any one of the above embodiments, and the solar cell comprises: a substrate having opposite first and second sides, the substrate comprising a first area and a second area separated from each other, the second area of the first side having a doped semiconductor layer; and a first electrode in electrical contact with the doped semiconductor layer.

[0021] According to some embodiments of the present disclosure, still another aspect of the embodiments of the present disclosure further provides a photovoltaic module, which comprises: a cell string connected by a plurality of solar cells prepared by the method for preparing a solar cell according to any one of the above embodiments, or connected by a plurality of solar cells according to the above embodiments; an encapsulating film for covering a surface of the cell string; and a cover plate for covering a surface of the encapsulating film away from the cell string.

[0022] The technical solutions provided by the embodiments of the present disclosure have at least the following advantages:

[0023] In the technical solution of the method for manufacturing a solar cell provided by the embodiment of the present disclosure, when the modification treatment is performed on the doping source layer corresponding to the first region, the yth scanning line is located between the xth scanning line and the x+1th scanning line, so that the xth scanning line and the x+1th scanning line can be spaced apart. Compared with the case where the xth scanning line and the x+1th scanning line are arranged adjacently, the xth scanning line and the x+1th scanning line are spaced apart by the yth scanning line, and the spacing between the xth scanning line and the x+1th scanning line can be larger, so that the heat accumulation caused by the laser energy radiation between the xth laser scanning and the x+1th laser scanning can be reduced, thereby reducing the risk that part of the doping source layer is converted into a molten substance due to the heat accumulation, and the molten substance is difficult to remove and the existence of the molten substance affects the performance of the solar cell. Therefore, by locating the yth scanning line between the xth scanning line and the x+1th scanning line, the present disclosure can reduce the risk of the molten substance caused by the heat accumulation, thereby facilitating the improvement of the performance of the solar cell. BRIEF DESCRIPTION OF DRAWINGS

[0024] One or more embodiments are illustrated by way of example in the figures that form a part of this disclosure and which are shown by way of illustration in the drawings. These embodiments are described in enough detail to enable those skilled in the art to practice the embodiments and it is understood that the description is not intended to limit the embodiments to the specifically disclosed embodiments. The drawings are in simplified form and are not to precise scale as is common in literature of this type. For purposes of the convenience and clarity only, directional terms are used with respect to the drawings. In addition, elements common between the drawings are indicated with the same or similar reference numerals.

[0025] Figure 1 A structural schematic diagram of a substrate provided in a method for manufacturing a solar cell in the related art;

[0026] Figure 2 A structural schematic diagram of a laser line for performing n times of laser scanning in a method for manufacturing a solar cell in the related art;

[0027] Figure 3 A structural schematic diagram of a substrate provided in a method for manufacturing a solar cell provided by the embodiment of the present disclosure;

[0028] Figure 4 A structural schematic diagram of a method for removing a doping source layer corresponding to a first region in a method for manufacturing a solar cell provided by the embodiment of the present disclosure;

[0029] Figure 5 A structural schematic diagram of a method for removing a doping semiconductor layer corresponding to a first region in a method for manufacturing a solar cell provided by the embodiment of the present disclosure;

[0030] Figure 6A structural schematic diagram of a structure of a scanning line for n times of laser scanning in a preparation method of a solar cell provided by the embodiment of the present disclosure;

[0031] Figure 7 A partial structural schematic diagram of a scanning line for n times of laser scanning in a preparation method of a solar cell provided by the embodiment of the present disclosure;

[0032] Figure 8 Another partial structural schematic diagram of a scanning line for n times of laser scanning in a preparation method of a solar cell provided by the embodiment of the present disclosure;

[0033] Figure 9 Still another partial structural schematic diagram of a scanning line for n times of laser scanning in a preparation method of a solar cell provided by the embodiment of the present disclosure;

[0034] Figure 10 Still another partial structural schematic diagram of a scanning line for n times of laser scanning in a preparation method of a solar cell provided by the embodiment of the present disclosure;

[0035] Figure 11 A structural schematic diagram of an xth scanning area, an x+1th scanning area and a yth scanning area in a preparation method of a solar cell provided by the embodiment of the present disclosure;

[0036] Figure 12 Another structural schematic diagram of an xth scanning area, an x+1th scanning area and a yth scanning area in a preparation method of a solar cell provided by the embodiment of the present disclosure;

[0037] Figure 13 A structural schematic diagram of a scanning line for laser scanning on a doped source layer corresponding to a first area in a preparation method of a solar cell provided by the embodiment of the present disclosure;

[0038] Figure 14 Another structural schematic diagram of a scanning line for laser scanning on a doped source layer corresponding to a first area in a preparation method of a solar cell provided by the embodiment of the present disclosure;

[0039] Figure 15 A partial three-dimensional structural schematic diagram of a cell string in a photovoltaic module provided by the embodiment of the present disclosure;

[0040] Figure 16 A partial cross-sectional schematic diagram of a photovoltaic module provided by the embodiment of the present disclosure.

[0041] Legend of reference signs:

[0042] 100, substrate; 110, first surface; 120, second surface; 130, first region; 140, second region; 101, doped semiconductor film; 102, doped source film; 11, first laser line; 12, second laser line; 13, third laser line; 200, substrate; 210, first side; 220, second side; 230, first region; 240, second region; 201, doped semiconductor layer; 202, doped source layer; 203, first electrode; 204, first passivation layer; 21, first scan line; 22, second scan line; 23, third scan line; 24, fourth scan line; 25, fifth scan line; 26, xth scan region; 27, x+1th scan region; 28, yth scan region; 300, solar cell; 301, encapsulation film; 302, cover plate; 303, solder ribbon. DETAILED DESCRIPTION

[0043] Figure 1 A structure schematic diagram of providing a substrate in a preparation method of a solar cell in the related art.

[0044] Reference Figure 1 The preparation method of a solar cell in the related art includes: providing a substrate 100, the substrate 100 has opposite first and second surfaces 110 and 120, the first surface 110 includes separate first and second regions 130 and 140, the first surface 110 has a doped semiconductor film 101 and a doped source film 102, and the doped source film 102 is on the surface of the doped semiconductor film 101 away from the second surface 120; modifying the doped source film 102 corresponding to the first region 130, and the modification includes n times of laser scanning.

[0045] The n times of laser scanning satisfy: the xth laser scanning corresponds to scanning along an xth laser line, the x+1th laser scanning corresponds to scanning along an x+1th laser line, and the xth laser line and the x+1th laser line are arranged adjacently. Wherein, 1≤x

[0046] The laser line is a center line of a laser region formed by a laser spot along a scanning direction when laser scanning.

[0047] Figure 2 A structure schematic diagram of a laser line for n times of laser scanning in a preparation method of a solar cell in the related art. Wherein, Figure 2 the direction P in the above is a scanning direction P of a laser spot when laser scanning, Figure 2 the direction Q (i.e. the first direction Q) in the above is a direction perpendicular to the scanning direction P.

[0048] Reference Figure 1 and Figure 2For example, taking n equal to 3 as an example. The second laser line 12 is located between the first laser line 11 and the third laser line 13. That is, the first laser line 11 of the first laser scanning and the second laser line 12 of the second laser scanning are arranged adjacent to each other, so that the distance between the first laser line 11 and the second laser line 12 in the first direction Q is small. Again, the energy of the laser scanning exists a certain radiation on the scanning area. After the first laser scanning along the first laser line 11, immediately the second laser scanning along the second laser line 12 adjacent to the first laser line 11, will make the heat accumulation between the first laser line 11 and the second laser line 12 due to the radiation of the energy of the laser scanning, and this heat accumulation will make part of the dopant source film 102 turn into a molten material, and the molten material is difficult to remove and the existence of the molten material will affect the performance of the solar cell.

[0049] Therefore, the arrangement of the laser scanning in the related art will produce a molten material affecting the performance of the solar cell, so that the performance of the solar cell needs to be improved.

[0050] In the method for manufacturing a solar cell provided in the embodiments of the present disclosure, when the dopant source layer corresponding to the first region is subjected to the modification treatment, the yth scanning line is located between the xth scanning line and the (x+1)th scanning line, so that the xth scanning line and the (x+1)th scanning line can be spaced apart. Compared with the arrangement that the xth scanning line and the (x+1)th scanning line are arranged adjacent to each other, the xth scanning line and the (x+1)th scanning line are spaced apart by the yth scanning line, and the distance between the xth scanning line and the (x+1)th scanning line in the scanning direction perpendicular to the laser scanning can be larger, so that the heat accumulation between the xth laser scanning and the (x+1)th laser scanning due to the radiation of the laser energy can be reduced, thereby the risk that part of the dopant source layer turns into a molten material due to the heat accumulation can be reduced, wherein the molten material is difficult to remove and the existence of the molten material will affect the performance of the solar cell. Therefore, by locating the yth scanning line between the xth scanning line and the (x+1)th scanning line, the present disclosure can reduce the risk of the molten material due to the heat accumulation, thereby facilitating the improvement of the performance of the solar cell.

[0051] In the description of the embodiments of the present disclosure, the technical terms "first", "second", and the like are only used to distinguish different objects, and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features. In the description of the embodiments of the present disclosure, the meaning of "a plurality of" is two or more, unless otherwise explicitly and specifically limited.

[0052] Reference to“an embodiment” herein means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the disclosure. The appearances of the phrase“in an embodiment” in various places in the specification are not necessarily referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly contemplated that embodiments described herein can be combined with each other, even though some embodiments are not specifically mentioned or illustrated herein.

[0053] In the description of the embodiments of the disclosure, the term“and / or” is only a description of an association relationship of associated objects, which means that there can be three relationships, for example, A and / or B, which can represent the three cases of existence of A, existence of A and B, and existence of B. In addition, the character“ / ” herein generally represents that the front and rear associated objects are in an“or” relationship.

[0054] In the description of the embodiments of the disclosure, the term“a plurality of” refers to two or more (including two), and similarly, “a plurality of groups” refers to two or more groups (including two groups), and “a plurality of pieces” refers to two or more pieces (including two pieces).

[0055] In the description of the embodiments of the disclosure, the technical terms“center”,“longitudinal”,“transverse”,“length”,“width”,“thickness”,“upper”,“lower”,“front”,“rear”,“left”,“right”,“vertical”,“horizontal”,“top”,“bottom”,“inner”,“outer”,“clockwise”,“counterclockwise”,“axial”,“radial”,“circumferential” and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the embodiments of the disclosure and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the embodiments of the disclosure.

[0056] In the description of the embodiments of the disclosure, unless otherwise explicitly specified and limited, the technical terms“mounting”,“connection”,“connection”,“fixing” and the like should be understood in a broad sense, for example, can be fixedly connected, or can be detachably connected, or can be integrated; can be mechanically connected, or can be electrically connected; can be directly connected, or can be indirectly connected through an intermediate medium; can be the internal communication of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the embodiments of the disclosure can be understood according to the specific circumstances.

[0057] In the drawings corresponding to the embodiments of the present disclosure, the thickness and area of a layer are exaggerated for clarity. When one component (such as a layer, film, region, or substrate) is described as being "on" or "at" another component, it can be "directly on" the other component (i.e., located between the other component and no other component) or there can be another component between the two components. Conversely, when one component is described as being "formed on" or "formed at" another component, it is meant that there is no other component between the two components.

[0058] In the description of the embodiments of the present disclosure, when a certain component "includes" another component, unless otherwise specified, it does not exclude the presence of other components, and other components can also be further included. In addition, when a layer, film, region, or plate, etc. component is referred to as "on / over" another component, it can be "directly on" the other component (i.e., located between the other component and no other component), or there can be another component between them. In addition, when a layer, film, region, plate, etc. component is "directly on" another component, or when a layer, film, region, plate, etc. component is on the surface of another component, it means that there is no other component between them.

[0059] The embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. However, those of ordinary skill in the art can understand that in the embodiments of the present disclosure, many technical details are presented in order to make the reader better understand the present disclosure. However, the technical solutions claimed by the present disclosure can be implemented even without these technical details and based on various changes and modifications of the following embodiments.

[0060] Figure 3 A structural schematic diagram of providing a substrate in the preparation method of the solar cell provided by the embodiments of the present disclosure; Figure 4 A structural schematic diagram of removing the doped source layer corresponding to the first region in the preparation method of the solar cell provided by the embodiments of the present disclosure; Figure 5 A structural schematic diagram of removing the doped semiconductor layer corresponding to the first region in the preparation method of the solar cell provided by the embodiments of the present disclosure; Figure 6 A structural schematic diagram of forming the first electrode in the preparation method of the solar cell provided by the embodiments of the present disclosure.

[0061] Combined reference Figures 3 to 6The method for manufacturing a solar cell includes: providing a substrate 200, the substrate 200 having opposite first and second sides 210 and 220, the substrate 200 including first and second regions 230 and 240 that are separate from each other, the first side 210 having a doped semiconductor layer 201 and a doped source layer 202, the doped source layer 202 being on a surface of the doped semiconductor layer 201 facing away from the second side 220; modifying the doped source layer 202 corresponding to the first region 230, the modifying including n laser scans, where the n laser scans satisfy: an xth laser scan corresponding to a scan along an xth scan line, an (x+1)th laser scan corresponding to a scan along an (x+1)th scan line, and a yth laser scan corresponding to a scan along a yth scan line, where the yth scan line is between the xth scan line and the (x+1)th scan line, 1≤x

[0062] The solar cell can be one of or any combination of a TOPCon (Tunnel Oxide Passivated Contact) cell, a PERC (Passivated Emitter Rear Cell) cell, a heterojunction cell, a solar thin film cell, and a stacked cell. The solar thin film cell includes, but is not limited to, a perovskite solar thin film cell, a copper-indium-selenium solar thin film cell, a gallium-arsenide solar thin film cell, and a cadmium-sulfide solar thin film cell. The stacked cell includes, but is not limited to, a perovskite cell stacked with a crystalline silicon cell, a perovskite cell stacked with a perovskite cell, and a perovskite cell stacked with a thin film cell.

[0063] The substrate 200 is configured to receive incident light and generate photo-generated carriers. In some embodiments, the substrate 200 can be a semiconductor substrate.

[0064] In some embodiments, the material of the substrate 200 can be an elemental semiconductor material. Specifically, the elemental semiconductor material is composed of a single element, such as silicon or germanium. The elemental semiconductor material can be in a single-crystalline state, a polycrystalline state, an amorphous state, or a microcrystalline state (a state that is both single-crystalline and amorphous, referred to as a microcrystalline state), such as at least one of single-crystalline silicon, polycrystalline silicon, amorphous silicon, and microcrystalline silicon.

[0065] In some embodiments, the material of the substrate 200 can also be a compound semiconductor material. Common compound semiconductor materials include, but are not limited to, silicon-germanium, silicon carbide, gallium arsenide, indium gallium, perovskite, cadmium telluride, copper-indium-selenium, and the like.

[0066] The substrate 200 can also be a sapphire substrate, a silicon-on-insulator substrate, or a germanium-on-insulator substrate.

[0067] The substrate 200 can be an N-type semiconductor substrate or a P-type semiconductor substrate. The N-type semiconductor substrate is doped with an N-type doping element, which can be at least one of a phosphorus (P) element, a bismuth (Bi) element, an antimony (Sb) element, or an arsenic (As) element, etc.

[0068] The substrate 200 has a first side 210 and a second side 220 opposite to each other. In some embodiments, the solar cell is a single-sided cell, and the first side 210 can be a light-receiving side of the substrate 200 for receiving incident light, and the second side 220 is a back light-receiving side. In some embodiments, the solar cell is a double-sided cell, and both the first side 210 and the second side 220 can be light-receiving sides for receiving incident light.

[0069] The substrate 200 includes a first region 230 and a second region 240 which are separate from each other. It should be noted that the first region 230 and the second region 240 are artificially defined regions. The first region 230 corresponds to a region of the doped source layer 202 that is subjected to a modification process, and the second region 240 corresponds to a region of the doped source layer 202 that is not subjected to the modification process, and the second region 240 also corresponds to a region of the first electrode 203 that is orthogonally projected onto the substrate 200.

[0070] The first side 210 has the doped semiconductor layer 201 and the doped source layer 202.

[0071] In some embodiments, the doped semiconductor layer is a part of the substrate, i.e., the substrate can include the doped semiconductor layer. In other embodiments, the doped semiconductor layer 201 is a separate part from the substrate 200, i.e., the doped semiconductor layer 201 is located on the substrate 200. In this case, Figures 3 to 6 The doped semiconductor layer 201 is a separate part from the substrate 200 is taken as an example.

[0072] In some embodiments, the doped element in the doped semiconductor layer 201 has a different conductivity type from the doped element in the substrate 200. For example, the doped element in the substrate 200 is of a P-type, and the doped element in the doped semiconductor layer 201 is of an N-type; or the doped element in the substrate 200 is of an N-type, and the doped element in the doped semiconductor layer 201 is of a P-type.

[0073] The material of the doped semiconductor layer 201 can be at least one of amorphous silicon, polycrystalline silicon, and silicon carbide.

[0074] The dopant source layer 202 has dopant elements, and the dopant elements in the dopant source layer 202 can be the same as the dopant elements in the doped semiconductor layer 201.

[0075] In some embodiments, the material of the dopant source layer 202 can be PSG (Phosphosilicate Glass) or BSG (Borosilicate Glass).

[0076] The dopant source layer 202 corresponding to the first region 230 is subjected to a modification process, so that the modified dopant source layer 202 is easy to remove, and the doped semiconductor layer 201 corresponding to the first region 230 without the protection of the dopant source layer 202 can be removed, so that the parasitic absorption caused by the doped semiconductor layer 201 can be reduced, and the performance of the solar cell can be improved.

[0077] In some embodiments, the laser for laser processing can be red nanosecond laser or infrared laser.

[0078] The scanning line is the center line of the laser region formed by the laser spot along the scanning direction P when the laser is scanned.

[0079] The laser spot can be triangular, circular, square, polygonal, etc.

[0080] Figure 7 A local structure diagram of the scanning line for n times of laser scanning in the preparation method of the solar cell provided by the embodiments of the present disclosure.

[0081] Reference Figure 7 In some embodiments, the third scanning line 23 is located between the first scanning line 21 and the second scanning line 22. At this time, x is equal to 1, and y is equal to 3. The third scanning line is located between the first scanning line and the second scanning line, so that the first scanning line and the second scanning line can be spaced apart. Compared with the adjacent arrangement of the first scanning line and the second scanning line, the first scanning line and the second scanning line are spaced apart by the third scanning line, and the distance between the first scanning line and the second scanning line in the first direction Q can be larger, which can reduce the heat accumulation between the first laser scanning and the second laser scanning due to the radiation of laser energy, thereby reducing the risk of molten material affecting the performance of the solar cell due to heat accumulation.

[0082] Figure 8 Another local structure diagram of the scanning line for n times of laser scanning in the preparation method of the solar cell provided by the embodiments of the present disclosure.

[0083] Reference Figure 8In some embodiments, the fourth scanning line 24 is located on the side of the second scanning line 22 away from the third scanning line 23. At this time, n is equal to 4, x is equal to 1 for the first scanning line 21, the second scanning line 22 and the third scanning line 23, and x is equal to 3 and y is equal to 2 for the second scanning line 22, the third scanning line 23 and the fourth scanning line 24.

[0084] Figure 9 Another partial structure schematic diagram of scanning lines in the n times laser scanning in the preparation method of the solar cell provided by the embodiments of the present disclosure is shown in FIG. 4. Figure 10 Another partial structure schematic diagram of scanning lines in the n times laser scanning in the preparation method of the solar cell provided by the embodiments of the present disclosure is shown in FIG. 4.

[0085] Reference is made to Figure 3 , Figure 9 and Figure 10 In some embodiments, the third scanning line 23 is located on the side of the first scanning line 21 away from the second scanning line 22, or the third scanning line 23 is located on the side of the second scanning line 22 away from the first scanning line 21.

[0086] The third scanning line 23 is located on the side of the first scanning line 21 away from the second scanning line 22. That is, the first scanning line 21 separates the second scanning line 22 and the third scanning line 23. Compared with the second scanning line 22 and the third scanning line 23 being adjacent, the second scanning line 22 and the third scanning line 23 are separated by the first scanning line 21, and the distance between the second scanning line 22 and the third scanning line 23 can be larger, which can reduce the heat accumulation between the second laser scanning and the third laser scanning due to the laser energy radiation, thereby reducing the risk of the partial doping source layer 202 being converted into a molten material due to heat accumulation. The molten material is difficult to remove and the existence of the molten material will affect the performance of the solar cell. Therefore, by arranging the third scanning line 23 on the side of the first scanning line 21 away from the second scanning line 22, the risk of the molten material due to heat accumulation can be reduced, thereby facilitating the improvement of the performance of the solar cell.

[0087] Reference is made to Figure 3 and Figure 9In some embodiments, the third scan line 23 is located on the side of the first scan line 21 away from the second scan line 22, and the fourth scan line 24 is located between the first scan line 21 and the second scan line 22. In this way, the first scan line 21 and the second scan line 22 are spaced apart by the fourth scan line 24, the second scan line 22 and the third scan line 23 are spaced apart by the first scan line 21 and the second scan line 22, and the third scan line 23 and the fourth scan line 24 are spaced apart by the first scan line 21. When n is equal to 4, any adjacent scan lines of the laser processing are spaced apart by another scan line of the laser processing, which can reduce the negative impact of heat accumulation caused by the adjacent scan lines of the laser processing on the performance of the finally formed solar cell.

[0088] Reference Figure 3 and Figure 10 The third scan line 23 is located on the side of the second scan line 22 away from the first scan line 21, the fourth scan line 24 is located between the first scan line 21 and the second scan line 22, and the fifth scan line 25 is located between the second scan line 22 and the third scan line 23. In this way, the first scan line 21 and the second scan line 22 are spaced apart by the fourth scan line 24, the second scan line 22 and the third scan line 23 are spaced apart by the fifth scan line 25, the third scan line 23 and the fourth scan line 24 are spaced apart by the second scan line 22 and the fifth scan line 25, and the fourth scan line 24 and the fifth scan line 25 are spaced apart by the second scan line 22. When n is equal to 5, any adjacent scan lines of the laser processing are spaced apart by another scan line of the laser processing, which can reduce the negative impact of heat accumulation caused by the adjacent scan lines of the laser processing on the performance of the finally formed solar cell.

[0089] Figure 11 A structure diagram of the xth scan area, the x+1th scan area and the yth scan area in the method for manufacturing a solar cell provided by the embodiments of the present disclosure. Figure 12 Another structure diagram of the xth scan area, the x+1th scan area and the yth scan area in the method for manufacturing a solar cell provided by the embodiments of the present disclosure.

[0090] Wherein, Figure 11 and Figure 12 The difference between them is: Figure 11 The xth scan area 26 and the yth scan area 28 in the first structure are spaced apart, and the x+1th scan area 27 and the yth scan area 28 are spaced apart. Figure 12 The xth scan area 26 and the yth scan area 28 in the second structure partially overlap, and the x+1th scan area 27 and the yth scan area 28 partially overlap. It should be noted that, Figure 12In order to better illustrate the overlapping part of the xth scanning area 26 and the yth scanning area 28 and the overlapping part of the (x+1)th scanning area 27 and the yth scanning area 28, the xth scanning area 26, the (x+1)th scanning area 27 and the yth scanning area 28 are shown in perspective.

[0091] With reference to Figure 3 , Figure 11 and Figure 12 In some embodiments, the xth scanning area 26 is spaced apart from the (x+1)th scanning area 27, where the xth scanning area 26 is the area of the xth laser scanning and the (x+1)th scanning area 27 is the area of the (x+1)th laser scanning. That is, the xth scanning area 26 and the (x+1)th scanning area 27 do not overlap, which can avoid the formation of heat accumulation on the overlapping area when the (x+1)th laser scanning is performed, thereby avoiding the negative impact on the performance of the final solar cell.

[0092] With reference to Figure 3 and Figure 11 In some embodiments, the yth scanning area 28 is located in the spacing area (not labeled) between the xth scanning area 26 and the (x+1)th scanning area 27, and the area ratio of the yth scanning area 28 to the spacing area is within the range of 80% to 100%.

[0093] The area ratio of the yth scanning area 28 to the spacing area can be 80%, 85%, 90%, 95% or 100%. When the area ratio of the yth scanning area 28 to the spacing area is within the above range, the area ratio of the yth scanning area 28 to the spacing area is relatively large, which can ensure that most of the doped source layer 202 corresponding to the first area 230 is scanned by the laser, thereby facilitating the subsequent removal of the doped source layer 202 corresponding to the first area 230.

[0094] It can be understood that although the area ratio of the yth scanning area 28 to the spacing area is not 100%, when most of the doped source layer 202 is scanned by the laser, most of the doped source layer 202 is removed by the first wet process. The small part of the doped source layer 202 corresponding to the first area 230 is removed synchronously during the first wet process. By setting the area ratio of the yth scanning area 28 to the spacing area within the range of 80% to 100%, most of the doped source layer 202 corresponding to the first area 230 can be scanned by the laser, thereby facilitating the subsequent removal of the doped source layer 202 corresponding to the first area 230.

[0095] In some embodiments, the distance between the xth scan area 26 and the (x+1)th scan area 27 in the first direction Q is greater than 0 and less than or equal to 520 μm. The distance between the xth scan area 26 and the (x+1)th scan area 27 can be 1 μm, 10 μm, 20 μm, 50 μm, 100 μm, 200 μm, 300 μm, 400 μm, 500 μm or 520 μm. The distance between the xth scan area 26 and the (x+1)th scan area 27 within the above range can reduce the heat accumulation between the xth scan area 26 and the (x+1)th scan area 27 when the (x+1)th laser scanning is performed after the xth laser scanning, thereby reducing the risk of melting due to heat accumulation and improving the performance of the solar cell.

[0096] Reference is made to Figure 3 and Figure 12 In some embodiments, the yth scan area 28 partially overlaps with the xth scan area 26 and also partially overlaps with the (x+1)th scan area 27. In this way, the yth scan area 28 can ensure that the interval between the xth scan area 26 and the (x+1)th scan area 27 is completely covered. This ensures that the first region 230 corresponding to the doped source layer 202 is completely scanned by the laser, thereby facilitating the improvement of the reliability of the solar cell.

[0097] In some embodiments, when the xth laser scanning is performed, the energy received by the xth scan area 26 in the first direction Q is not uniform, and generally, the energy received by the central portion of the xth scan area 26 is higher than the energy received by the edge portions located on the opposite sides of the central portion along the first direction Q. The partial overlap between the yth scan area 28 and the xth scan area 26 allows the yth laser scanning to reinforce the edge portions of the xth scan area 26 that receive less energy, thereby facilitating the improvement of the reliability of the solar cell.

[0098] In some embodiments, when the (x+1)th laser scanning is performed, the energy received by the (x+1)th scan area 27 in the first direction Q is not uniform, and generally, the energy received by the central portion of the (x+1)th scan area 27 is higher than the energy received by the edge portions located on the opposite sides of the central portion along the first direction Q. The partial overlap between the yth scan area 28 and the (x+1)th scan area 27 allows the yth laser scanning to reinforce the edge portions of the (x+1)th scan area 27 that receive less energy, thereby facilitating the improvement of the reliability of the solar cell.

[0099] The first direction Q is the direction in which the xth scan line points to the (x+1)th scan line. The first direction Q can be perpendicular to the scanning direction P of the laser spot when the laser is scanned.

[0100] In some embodiments, along the first direction Q, a width of the overlapping part of the yth scanning area 28 and the xth scanning area 26 is a first width W1, a width of the xth scanning area 26 is a second width W2, and the first width W1 and the second width W2 satisfy: 0

[0101] For example, the W1 / W2 can be 0.01, 0.05, 0.1, 0.15, 0.2, 0.3, 0.4, 0.45 or 0.49. When the W1 / W2 is within the above range, the ratio of the W1 / W2 can be prevented from being too large, i.e., the width of the overlapping part of the yth scanning area 28 and the xth scanning area 26 can be prevented from being too large, and the problem of laser energy waste caused by excessive laser scanning of the xth scanning area 26 can be avoided.

[0102] Along the first direction Q, a width of the overlapping part of the yth scanning area 28 and the x+1th scanning area 27 is a third width W3, a width of the x+1th scanning area 27 is a fourth width W4, and the third width W3 and the fourth width W4 satisfy: 0

[0103] For example, the W3 / W4 can be 0.01, 0.05, 0.1, 0.15, 0.2, 0.3, 0.4, 0.45 or 0.49. When the W3 / W4 is within the above range, the ratio of the W3 / W4 can be prevented from being too large, i.e., the width of the overlapping part of the yth scanning area 28 and the x+1th scanning area 27 can be prevented from being too large, and the problem of laser energy waste caused by excessive laser scanning of the x+1th scanning area 27 can be avoided.

[0104] In some embodiments, 160 μm≤W1≤220 μm. For example, the first width W1 can be 160 μm, 170 μm, 180 μm, 190 μm, 200 μm, 210 μm or 220 μm. When the first width W1 is within the above range, the problem of laser energy waste caused by excessive laser scanning of the xth scanning area 26 due to the first width W1 being too large can be avoided. Also, the problem that the yth laser processing is difficult to reinforce the energy of the edge part of the xth laser processing due to the first width W1 being too small can be avoided.

[0105] 100 μm≤W2≤500 μm. For example, the second width W2 can be 100 μm, 200 μm, 300 μm, 400 μm or 500 μm. When the second width W2 is within the above range, the width of the xth scanning area 26 is large, i.e., the acting area of the xth laser processing can be large, which is beneficial to improve the efficiency of the xth laser processing.

[0106] 160 μm≤ W3≤ 220 μm. Exemplarily, the third width W3 can be 160 μm, 170 μm, 180 μm, 190 μm, 200 μm, 210 μm or 220 μm. The third width W3 is within the above range, which can avoid the problem of excessive third width W3, excessive laser scanning of the (x+1)th scanning area 27 and waste of laser energy. It can also avoid the problem of too small third width W3, and the (y)th laser processing is difficult to reinforce the energy of the edge part of the (x+1)th laser processing.

[0107] 100 μm≤ W4≤ 500 μm. Exemplarily, the fourth width W4 can be 100 μm, 200 μm, 300 μm, 400 μm or 500 μm. The fourth width W4 is within the above range, and the width of the (x+1)th scanning area 27 is large, i.e. the action area of the (x+1)th laser processing can be large, which is beneficial to improve the efficiency of the (x+1)th laser processing.

[0108] In some embodiments, along the first direction Q, the width of the xth scanning area 26 is the same as the width of the (x+1)th scanning area 27, and the width of the xth scanning area 26 is the same as the width of the yth scanning area 28. In this way, the xth laser processing, the (x+1)th laser processing and the yth laser processing can use the same laser, which is beneficial to improve the preparation efficiency of the solar cell.

[0109] In some embodiments, the power of the yth laser scanning is less than or equal to the power of the xth laser scanning, and the power of the yth laser scanning is less than or equal to the power of the (x+1)th laser scanning.

[0110] When the power of the yth laser scanning is equal to the power of the xth laser scanning, and the power of the yth laser scanning is equal to the power of the (x+1)th laser scanning, the xth laser processing, the (x+1)th laser processing and the yth laser processing can use the same laser, which is beneficial to improve the preparation efficiency of the solar cell.

[0111] When the power of the yth laser scanning is less than the power of the xth laser scanning, and the power of the yth laser scanning is less than the power of the (x+1)th laser scanning, the power of the yth laser scanning is relatively small, which can avoid the problem of excessive power when the yth laser scanning scans the interval between the xth scanning area 26 and the (x+1)th scanning area 27, and waste of laser energy.

[0112] In some embodiments, the power of the xth laser scanning is 1000W-2000W, for example, 1000W, 1200W, 1320W, 1400W, 1500W, 1600W, 1800W or 2000W. The power of the xth laser scanning is in the above range, the power of the xth laser scanning is large, which can provide sufficient energy for the modification of the dopant source layer 202, and can shorten the scanning time per unit area, and improve the preparation efficiency of the solar cell.

[0113] The power of the x+1th laser scanning is 1000W-2000W, for example, 1000W, 1200W, 1320W, 1400W, 1500W, 1600W, 1800W or 2000W. The power of the x+1th laser scanning is in the above range, the power of the x+1th laser scanning is large, which can provide sufficient energy for the modification of the dopant source layer 202, and can shorten the scanning time per unit area, and improve the preparation efficiency of the solar cell.

[0114] The power of the yth laser scanning is 1000W-2000W, for example, 1000W, 1200W, 1320W, 1400W, 1500W, 1600W, 1800W or 2000W. The power of the yth laser scanning is in the above range, the power of the yth laser scanning is large, which can provide sufficient energy for the modification of the dopant source layer 202, and can shorten the scanning time per unit area, and improve the preparation efficiency of the solar cell.

[0115] Figure 13 A structure schematic diagram of a scanning line for laser scanning on the dopant source layer corresponding to the first region in the preparation method of the solar cell provided by the embodiments of the present disclosure. Figure 14 Another structure schematic diagram of a scanning line for laser scanning on the dopant source layer corresponding to the first region in the preparation method of the solar cell provided by the embodiments of the present disclosure.

[0116] It should be noted that the solar cell can be a main grid cell or a non-main grid cell. For reference Figure 13 When the solar cell is a main grid cell, there is a second region 240 between the adjacent first regions 230 in the scanning direction P, that is, there is a region which is not subjected to laser scanning processing between the adjacent first regions 230 in the scanning direction P. Among them, the second region 240 between the adjacent first regions 230 in the scanning direction P can be a corresponding region for forming a main grid later, and the second region 240 between the adjacent first regions 230 in the first direction Q can be a corresponding region for forming a fine grid later. For reference Figure 14 When the solar cell is a non-main grid cell, the first region 230 extends along the scanning direction P, and the first region 230 does not have a second region 240 in the scanning direction P.

[0117] refer to Figures 3 to 5 In some embodiments, the method for removing the doped source layer 202 and the doped semiconductor layer 201 corresponding to the first region 230 includes: removing the doped source layer 202 corresponding to the first region 230 using a first wet process; and removing the doped semiconductor layer 201 corresponding to the first region 230 using a second wet process.

[0118] The first wet process can be to use a first etching solution to etch and remove the doped source layer 202 corresponding to the first region 230.

[0119] When the first wet process removes the doped source layer 202 corresponding to the first region 230, the doped source layer 202 on the second region 240 has not undergone modification treatment. Therefore, the doped source layer 202 corresponding to the second region 240 hardly reacts with the first etching solution, allowing the doped source layer 202 on the second region 240 to be retained. However, the doped source layer 202 corresponding to the first region 230 has undergone modification treatment. The first etching solution reacts with the modified doped source layer 202 corresponding to the first region 230, allowing the doped source layer 202 corresponding to the first region 230 to be removed.

[0120] It is understandable that even during the first wet process, a small portion of the doped source layer 202 corresponding to the second region 240 may be removed after reacting with the first etching solution, i.e., the thickness of the doped source layer 202 corresponding to the second region 240 is reduced. However, most of the doped source layer 202 corresponding to the second region 240 will still be retained, so that the doped source layer 202 corresponding to the second region 240 after the first wet process can still serve as a protective layer for the doped semiconductor layer 201 corresponding to the second region 240 in the second wet process step.

[0121] The first etching solution can be an acidic etching solution, such as a hydrofluoric acid solution, with a concentration of 0.5% to 1.5%, for example, 0.5%, 1%, or 1.5%. The processing time of the first etching solution can be 60s to 320s, for example, 60s, 90s, 100s, 130s, 260s, or 320s.

[0122] The process temperature for the first wet process can be 20℃~30℃, for example, 20℃, 23℃, 25℃, 28℃ or 30℃.

[0123] The second wet process can be to use a second etching solution to etch and remove the doped semiconductor layer 201 corresponding to the first region 230.

[0124] The second etching solution reacts with the doped semiconductor layer 201 corresponding to the first region 230, so that the doped semiconductor layer 201 corresponding to the first region 230 is removed. The second etching solution hardly reacts with the doped source layer 202 corresponding to the second region 240, so that the doped source layer 202 corresponding to the second region 240 can serve as a protective layer to protect the doped semiconductor layer 201 of the second region 240.

[0125] The second etching solution can be an alkaline etching solution, such as a potassium hydroxide solution. The concentration of the potassium hydroxide solution can be 1.6% to 1.7%. The processing time of the second etching solution can be 500s to 600s, such as 500s, 530s, 550s, 580s, or 600s.

[0126] The process temperature of the second wet process can be 75°C to 85°C, such as 75°C, 79°C, 80°C, 83°C, or 85°C.

[0127] In some embodiments, when the doped semiconductor layer 201 corresponding to the first region 230 is removed by etching using the second etching solution, part of the substrate 200 material corresponding to the first region 230 is also removed by etching.

[0128] In some embodiments, the doped source layer 202 corresponding to the first region 230 is subjected to a modification process including n times of laser scanning, so that the doped elements in the doped source layer 202 and the doped semiconductor layer 201 corresponding to the first region 230 diffuse toward the substrate 200 under the action of laser scanning, and the doping concentration of the doped elements near the surface of the doped source layer 202 in the doped source layer 202 and the doped semiconductor layer 201 corresponding to the first region 230 is reduced. The doping concentration of the doped elements in the doped source layer 202 corresponding to the first region 230 is lower, so that the first etching solution is more likely to react with it, and thus it is removed in the first wet process. In the second wet process, the doping concentration of the doped elements on the surface of the doped semiconductor layer 201 of the first region 230 away from the substrate 200 is lower, so that the second etching solution is more likely to react with it, and the doped semiconductor layer 201 corresponding to the first region 230 is removed.

[0129] In some embodiments, the method for preparing a solar cell further comprises: performing a post-oxidation process to form an oxide layer (not shown) on the substrate 200 corresponding to the first region 230.

[0130] The oxide layer can be a silicon oxide layer.

[0131] The oxide layer can be used to repair laser damage on the substrate 200 corresponding to the first region 230 after laser scanning, so as to improve the performance of the solar cell finally prepared.

[0132] The post-oxidation treatment includes providing an oxygen-containing gas. The oxygen-containing gas can be oxygen, ozone, or the like. The post-oxidation treatment can have a process time of 4000s-5000s, such as 4000s, 4300s, 4500s, 4700s, or 5000s. The post-oxidation treatment can have a temperature of 1000°C-1100°C, such as 1000°C, 1030°C, 1060°C, 1080°C, or 1100°C.

[0133] Referring to Figure 5 and Figure 6 In some embodiments, the method of manufacturing a solar cell further includes removing the doped source layer 202 corresponding to the second region 240. In this way, the negative effect of the doped source layer 202 on the electrical contact between the first electrode 203 and the doped semiconductor layer 201 can be avoided.

[0134] In some embodiments, the doped source layer 202 corresponding to the second region 240 can be removed simultaneously with the removal of the oxide layer corresponding to the first region 230. In this way, the manufacturing efficiency of the solar cell can be improved. The oxide layer present in the first region 230 can also be avoided from affecting the passivation effect of the passivation layer formed subsequently on the substrate 200.

[0135] Referring to Figure 6 In some embodiments, the method of manufacturing a solar cell further includes forming a first passivation layer 204 on the first side 210. Specifically, the first passivation layer 204 is formed on the substrate 200 corresponding to the first region 230 of the first side 210, and is also formed on the surface of the doped semiconductor layer 201 facing away from the second side 220.

[0136] The first passivation layer 204 is used to saturate the defects of the substrate 200 and reduce the interface state density.

[0137] The material of the first passivation layer 204 can be at least one of silicon oxide, aluminum oxide, silicon nitride, or silicon oxynitride.

[0138] The first passivation layer 204 can be a single-layer structure or a multi-layer structure. For the multi-layer structure, the materials of different layers can be different from each other, or the materials of a portion of the layers can be the same and different from the materials of the other layers. For example, the first passivation layer 204 can be a multi-layer structure of a silicon nitride layer and an aluminum oxide layer.

[0139] Continuing to refer to Figure 6 In some embodiments, the method of manufacturing a solar cell further includes forming a first electrode 203 in electrical contact with the doped semiconductor layer 201.

[0140] The material of the first electrode 203 can be copper, silver, nickel, or aluminum.

[0141] In some embodiments, the method of fabricating a solar cell further comprises, before forming the first electrode 203, forming a tunneling layer (not shown) on the second side 220; forming a doped conductive layer (not shown) on a side of the tunneling layer facing away from the substrate 200; and forming a second passivation layer (not shown) on a surface of the doped conductive layer facing away from the substrate 200.

[0142] The tunneling layer is used to form a compact interface with the substrate 200, reduce dangling bonds of the substrate 200, and reduce the interface recombination rate. It also allows majority carriers (e.g., electrons in an N-type substrate 200) in the substrate 200 to pass through efficiently in a "tunneling effect", while blocking minority carriers (e.g., holes in an N-type substrate 200) in the substrate 200, thereby reducing recombination.

[0143] The material of the tunneling layer can include at least one of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, or magnesium fluoride.

[0144] The doped conductive layer has a different conductivity type of the doped element than the doped semiconductor layer 201.

[0145] The material of the doped conductive layer can be at least one of amorphous silicon, polycrystalline silicon, or silicon carbide.

[0146] The second passivation layer is used to saturate defects of the substrate 200, reduce the interface state density, and also protect the doped conductive layer from being eroded by the external environment.

[0147] In some embodiments, the method of fabricating a solar cell can further comprise forming a second electrode (not shown) in electrical contact with the doped conductive layer.

[0148] The material of the second electrode can be copper, silver, nickel, or aluminum.

[0149] Accordingly, another aspect of the present disclosure provides a solar cell fabricated by the method of fabricating a solar cell of any of the above embodiments. It should be noted that the same or corresponding parts of the above embodiments can refer to the corresponding descriptions of the above embodiments, which will not be repeated here.

[0150] With reference to Figure 6 , the solar cell comprises a substrate 200, a doped semiconductor layer 201, and a first electrode 203. The substrate 200 has opposite first and second sides 210 and 220, and includes first and second regions 230 and 240 that are separate from each other. The second region 240 of the first side 210 has the doped semiconductor layer 201. The first electrode 203 is in electrical contact with the doped semiconductor layer 201.

[0151] In the solar cell provided by the embodiments of the present disclosure, the doped semiconductor layer 201 is arranged only in the second region 240 of the first side 210, and the second region 240 of the first side 210 is not arranged with the doped semiconductor layer 201, which can reduce the parasitic absorption caused by the doped semiconductor layer 201, thereby improving the performance of the solar cell.

[0152] Accordingly, some embodiments of the present disclosure, the embodiments of the present disclosure still provide a photovoltaic module in another aspect, the photovoltaic module includes a plurality of solar cells prepared by the preparation method of any one of the above embodiments, or connected by a plurality of solar cells of the above embodiments. It should be noted that the same or corresponding parts as the above embodiments can refer to the corresponding description of the above embodiments, which will not be repeated hereinafter.

[0153] Figure 15 A partial perspective view of a cell string in a photovoltaic module provided by the embodiments of the present disclosure; Figure 16 A partial cross-sectional view of a photovoltaic module provided by the embodiments of the present disclosure.

[0154] Reference Figure 15 And Figure 16 The photovoltaic module includes a cell string, an encapsulation adhesive film 301 and a cover plate 302. The cell string is connected by a plurality of solar cells 300 prepared by the preparation method of any one of the above embodiments, or connected by a plurality of solar cells 300 of the above embodiments; the encapsulation adhesive film 301 is used to cover the surface of the cell string; the cover plate 302 is used to cover the surface of the encapsulation adhesive film 301 away from the cell string.

[0155] In some embodiments, the solar cells 300 are electrically connected in the form of a whole piece or multiple pieces to form a plurality of cell strings, and the plurality of cell strings are electrically connected in series and / or parallel. The solar cell 300 can be a whole piece or a cut piece, and the cut piece refers to a complete whole piece formed by a cutting process.

[0156] The plurality of solar cells 300 can be electrically connected by a solder strip 303.

[0157] In some embodiments, the encapsulation film 301 comprises a first encapsulation layer covering one of the first and second surfaces of the solar cell 300 and a second encapsulation layer covering the other of the first and second surfaces of the solar cell 300. Specifically, at least one of the first encapsulation layer or the second encapsulation layer can be an organic encapsulation film such as a polyvinyl butyral (PVB) film, an ethylene-vinyl acetate (EVA) film, a polyolefin elastomer (POE) film, or a polyethylene terephthalate (PET) film, or at least one of the first encapsulation layer or the second encapsulation layer can also be an EP film, an EPE film, or a PVP film. The EP film refers to a co-extrusion film formed by stacking an EVA film and a POE film, the EPE film refers to a co-extrusion film formed by stacking an EVA film, a POE film, and an EVA film in sequence, and the PVP film refers to a co-extrusion film formed by stacking a POE film, an EVA film, and a POE film in sequence. The co-extrusion film can be prepared by extruding one or more raw materials onto another film prepared in advance or by bonding different types of films to each other during film processing.

[0158] In some cases, the first encapsulation layer and the second encapsulation layer have a boundary before lamination, and after lamination, the photovoltaic module is formed without the concept of the first encapsulation layer and the second encapsulation layer, i.e., the first encapsulation layer and the second encapsulation layer have formed an integral encapsulation film 301.

[0159] In some embodiments, the cover plate 302 can be a glass cover plate, a plastic cover plate, or the like having a light-transmitting function. Specifically, the surface of the cover plate 302 facing the encapsulation film 301 can be a concave-convex surface or a suede surface comprising a plurality of convex structures, thereby increasing the utilization rate of incident light. The cover plate 302 comprises a first cover plate opposite the first encapsulation layer and a second cover plate opposite the second encapsulation layer.

[0160] It is understood by those skilled in the art that the above embodiments are specific embodiments for implementing the present disclosure, and in actual applications, various changes can be made in form and details without departing from the spirit and scope of the present disclosure. Any person skilled in the art can make various modifications and changes without departing from the spirit and scope of the present disclosure, and therefore the protection scope of the present disclosure should be limited by the scope defined in the claims.

Claims

1. A method for preparing a solar cell, characterized in that, include: A substrate is provided having a first side and a second side opposite to each other. The substrate includes a first region and a second region that are separate from each other. The first side has a doped semiconductor layer and a doped source layer, the doped source layer being located on a surface of the doped semiconductor layer opposite to the second side. The doped source layer corresponding to the first region is modified, and the modification process includes n laser scans, wherein the n laser scans satisfy the following: The xth laser scan corresponds to scanning along the xth scan line, the (x+1)th laser scan corresponds to scanning along the (x+1)th scan line, and the yth laser scan corresponds to scanning along the yth scan line. The yth scan line is located between the xth scan line and the (x+1)th scan line, 1 ≤ x < n, y is different from x and different from x+1, and x, y and n are all arbitrary positive integers. Remove the doped source layer and the doped semiconductor layer corresponding to the first region; Remove the doped source layer corresponding to the second region; A first electrode is formed, and the first electrode is in electrical contact with the doped semiconductor layer corresponding to the second region.

2. The method for preparing a solar cell according to claim 1, characterized in that, The third scan line is located between the first and second scan lines.

3. The method for preparing a solar cell according to claim 2, characterized in that, The fourth scan line is located on the side of the second scan line that is opposite to the third scan line.

4. The method for preparing a solar cell according to claim 1, characterized in that, The third scan line is located on the side of the first scan line away from the second scan line, or the third scan line is located on the side of the second scan line away from the first scan line.

5. The method for preparing a solar cell according to claim 4, characterized in that, The third scan line is located on the side of the first scan line away from the second scan line, and the fourth scan line is located between the first scan line and the second scan line; or, The third scan line is located on the side of the second scan line away from the first scan line, the fourth scan line is located between the first scan line and the second scan line, and the fifth scan line is located between the second scan line and the third scan line.

6. The method for preparing a solar cell according to any one of claims 1 to 5, characterized in that, The x-th scan area and the (x+1)-th scan area are separated, wherein the x-th scan area is the area of ​​the x-th laser scan, and the (x+1)-th scan area is the area of ​​the (x+1)-th laser scan.

7. The method for preparing a solar cell according to claim 6, characterized in that, The area of ​​the y-th laser scan is the y-th scan area, which is located in the interval between the x-th scan area and the x+1-th scan area, and the area of ​​the y-th scan area accounts for 80% to 100% of the area of ​​the interval.

8. The method for preparing a solar cell according to claim 6, characterized in that, Along the first direction, the distance between the xth scan region and the (x+1)th scan region is greater than 0 and less than or equal to 520 μm.

9. The method for preparing a solar cell according to claim 6, characterized in that, The region of the y-th laser scan is the y-th scan area, which partially overlaps with the x-th scan area and also partially overlaps with the (x+1)-th scan area.

10. The method for preparing a solar cell according to claim 9, characterized in that, Along the first direction, the width of the overlapping portion of the y-th scan region and the x-th scan region is the first width W1, and the width of the x-th scan region is the second width W2. The first width W1 and the second width W2 satisfy: 0 < W1 / W2 < 0.5; Along the first direction, the width of the overlapping portion of the y-th scan region and the (x+1)-th scan region is the third width W3, and the width of the (x+1)-th scan region is the fourth width W4. The third width W3 and the fourth width W4 satisfy: 0 < W3 / W4 < 0.

5.

11. The method for preparing a solar cell according to claim 10, characterized in that, 160μm≤W1≤220μm; 100μm≤W2≤500μm; 160μm≤W3≤220μm; 100μm≤W4≤500μm.

12. The method for preparing a solar cell according to claim 6, characterized in that, The area of ​​the y-th laser scan is the y-th scan area. Along the first direction, the width of the x-th scan area is the same as the width of the (x+1)-th scan area, and the width of the x-th scan area is the same as the width of the y-th scan area.

13. The method for preparing a solar cell according to claim 1, characterized in that, The power of the y-th laser scan is less than or equal to the power of the x-th laser scan, and the power of the y-th laser scan is less than or equal to the power of the (x+1)-th laser scan.

14. The method for preparing a solar cell according to claim 1, characterized in that, The power of the xth laser scan is 1000W~2000W, the power of the (x+1)th laser scan is 1000W~2000W, and the power of the yth laser scan is 1000W~2000W.

15. The method for preparing a solar cell according to claim 1, characterized in that, The method for removing the doped source layer and the doped semiconductor layer corresponding to the first region includes: removing the doped source layer corresponding to the first region using a first wet process; and removing the doped semiconductor layer corresponding to the first region using a second wet process.

16. A solar cell, characterized in that, The solar cell is prepared by the method for preparing a solar cell according to any one of claims 1 to 15, and the solar cell comprises: A substrate having opposing first and second sides, the substrate including a first region and a second region separate from each other, the second region on the first side having a doped semiconductor layer; The first electrode is in electrical contact with the doped semiconductor layer.

17. A photovoltaic module, characterized in that, include: A battery string is formed by connecting multiple solar cells prepared by the method of any one of claims 1 to 15, or by connecting multiple solar cells as described in claim 16; An encapsulating film is used to cover the surface of the battery string; A cover plate is used to cover the surface of the encapsulating film that faces away from the battery string.

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