Electronic device

Abstract

The invention provides an electronic device. The electronic device comprises a plurality of first connecting pads, a first circuit layer and a second circuit layer, the first circuit layer comprises a first dielectric layer and a plurality of first circuits, the plurality of first circuits are arranged on the surface of the first dielectric layer, and the plurality of first connecting pads are electrically connected with one of the plurality of first circuits. The second circuit layer comprises a second dielectric layer and a conductive through hole, wherein the conductive through hole penetrates through the second dielectric layer and is electrically connected with the plurality of first connecting pads through one of the plurality of first circuits. In a sectional view, one of the plurality of first lines comprises a first part and two second parts, the first part is located between two adjacent first connecting pads, the two second parts are located on two opposite sides of the first part, and the length of one of the two second parts is smaller than that of the first part.

Description

[0001] Related Divisional Application

[0002] The present disclosure is a divisional application of the patent application No. 202110424211.8 with the title of “Light-emitting module and light-emitting device comprising the same” filed on April 20, 2021. TECHNICAL FIELD

[0003] Embodiments of the present disclosure relate to a light-emitting module and an electronic device comprising the same. BACKGROUND

[0004] With the continuous expansion of the application of electronic devices, the development of display technology is also changing rapidly. With different application conditions, the requirements for the display quality of electronic devices are getting higher and higher, and electronic devices are facing different problems. Therefore, the research and development of electronic devices must be continuously updated and adjusted. SUMMARY

[0005] The present disclosure is directed to an electronic device with better electrical connection or display quality.

[0006] According to some embodiments of the present disclosure, an electronic device includes a plurality of first contact pads, a first wiring layer, and a second wiring layer. The first wiring layer includes a first dielectric layer and a plurality of first wirings, wherein the plurality of first wirings are disposed on a surface of the first dielectric layer, and the plurality of first contact pads are electrically connected to one of the plurality of first wirings. The second wiring layer includes a second dielectric layer and a conductive via, wherein the conductive via penetrates the second dielectric layer and is electrically connected to the plurality of first contact pads through one of the plurality of first wirings. In a cross-sectional view, one of the plurality of first wirings includes a first portion and two second portions, the first portion is located between two adjacent plurality of first contact pads, the two second portions are located on opposite sides of the first portion, and a length of one of the two second portions is less than a length of the first portion.

[0007] According to other embodiments of the present disclosure, an electronic device includes a substrate, a wiring structure, a plurality of light-emitting units, and a plurality of organic layers. The substrate includes a signal line. The wiring structure is disposed on the substrate and has a first side and a second side opposite to the first side. The wiring structure includes a plurality of first contact pads, at least one second contact pad, and a redistribution wiring layer. The plurality of first contact pads are disposed on the first side. The at least one second contact pad is disposed on the second side, wherein the plurality of first contact pads are electrically connected to the at least one second contact pad. The redistribution wiring layer is disposed between the plurality of first contact pads and the at least one second contact pad. The plurality of light-emitting units are electrically connected to the plurality of first contact pads. The plurality of organic layers overlap the plurality of light-emitting units, and an upper surface of at least one of the plurality of organic layers has a curved surface. BRIEF DESCRIPTION OF DRAWINGS

[0008] FIG. 1AA top view schematic diagram of a light emitting device according to an embodiment of the present disclosure;

[0009] FIG. 1B A cross-sectional view of the light emitting device of FIG. 1A along section line A-A';

[0010] FIG. 1C A cross-sectional view of a light emitting device according to another embodiment of the present disclosure;

[0011] FIG. 2A A top view schematic diagram of a first circuit layer of a light emitting module according to an embodiment of the present disclosure;

[0012] FIG. 2B A top view schematic diagram of a second circuit layer of a light emitting module according to an embodiment of the present disclosure;

[0013] FIG. 2C A top view schematic diagram of a third circuit layer of a light emitting module according to an embodiment of the present disclosure;

[0014] FIG. 2D A bottom view schematic diagram of a third circuit layer of a light emitting module according to an embodiment of the present disclosure;

[0015] FIG. 3A A top view schematic diagram of a third circuit layer of a light emitting module according to another embodiment of the present disclosure;

[0016] FIG. 3B A top view schematic diagram of a third circuit layer of a light emitting module according to another embodiment of the present disclosure;

[0017] FIG. 3C A top view schematic diagram of a third circuit layer of a light emitting module according to another embodiment of the present disclosure;

[0018] FIG. 4 A top view schematic diagram of a third circuit layer of a light emitting module according to another embodiment of the present disclosure;

[0019] FIG. 5 A bottom view schematic diagram of a fourth circuit layer of a light emitting module according to another embodiment of the present disclosure;

[0020] FIG. 6A A top view schematic diagram of a light emitting module according to another embodiment of the present disclosure;

[0021] FIG. 6B A cross-sectional view of the light emitting module of FIG. 6A along section line B-B';

[0022] FIG. 7A A top view schematic diagram of a light emitting module according to another embodiment of the present disclosure;

[0023] FIG. 7B A cross-sectional view of the light emitting module of FIG. 7A along section line C-C';

[0024] FIG. 7C for FIG. 7A A cross-sectional view of the light-emitting module along section line D-D';

[0025] FIG. 7D for FIG. 7A A cross-sectional view of the light-emitting module along section line E-E';

[0026] FIG. 8A This is a top view schematic diagram of a light-emitting module according to another embodiment of this disclosure;

[0027] FIG. 8B for FIG. 7A A cross-sectional view of the light-emitting module along section line F-F';

[0028] FIG. 9A This is a top view schematic diagram of one layer of a light-emitting module according to another embodiment of this disclosure;

[0029] FIG. 9B This is a bottom view schematic diagram of a light-emitting module according to another embodiment of this disclosure;

[0030] FIG. 10A This is a top view schematic diagram of a light-emitting module according to another embodiment of the present disclosure;

[0031] FIG. 10B This is a bottom view schematic diagram of a light-emitting module according to another embodiment of the present disclosure. Detailed Implementation

[0032] This disclosure can be understood by referring to the following detailed description in conjunction with the accompanying drawings. It should be noted that, for ease of understanding and for the sake of brevity, many of the drawings in this disclosure depict only a portion of the electronic device, and certain components in the drawings are not drawn to scale. Furthermore, the number and dimensions of the components in the drawings are for illustrative purposes only and are not intended to limit the scope of this disclosure.

[0033] Throughout this disclosure and in the appended claims, certain terms are used to refer to specific elements. Those skilled in the art will understand that electronic device manufacturers may use different names to refer to the same element. This document is not intended to distinguish between elements that have the same function but different names. In the following description and claims, words such as “comprising,” “containing,” and “having” are open-ended terms and should therefore be interpreted as “containing but not limited to…”. Thus, when the terms “comprising,” “containing,” and / or “having” are used in the description of this disclosure, they specify the presence of the corresponding feature, area, step, operation, and / or component, but do not exclude the presence of one or more of the corresponding feature, area, step, operation, and / or component.

[0034] The directional terms mentioned herein, such as "upper", "lower", "front", "back", "left", "right", etc., are only with reference to the orientation of the drawings. Therefore, the directional terms used are for illustration, and are not intended to limit the disclosure. In the drawings, each drawing shows the general features of the methods, structures and / or materials used in a particular embodiment. However, these drawings should not be interpreted as defining or limiting the scope or nature of what is encompassed by these embodiments. For example, the relative sizes, thicknesses and positions of various film layers, regions and / or structures can be reduced or enlarged for clarity.

[0035] It should be understood that when a component or film layer is referred to as being "connected to" another component or film layer, it can be directly connected to the other component or film layer, or there can be an intervening component or film layer between the two. When a component is referred to as being "directly connected to" another component or film layer, there is no intervening component or film layer between the two. In addition, when a member is referred to as being "coupled to" another member (or variants thereof), it can be directly connected to the other member, indirectly connected to the other member through one or more members (e.g., electrically connected).

[0036] The terms "about", "equal to", "equivalent to", or "substantially" or "approximately" are generally interpreted to be within 20% of a given value or range, or within 10%, 5%, 3%, 2%, 1%, or 0.5% of a given value or range.

[0037] A structure (or layer, component, substrate) described in the disclosure as being "on" another structure (or layer, component, substrate) can mean that the two structures are adjacent and directly connected, or can mean that the two structures are adjacent but not directly connected, meaning that there is at least one intervening structure (or intervening layer, intervening component, intervening substrate, intervening space) between the two structures, the lower surface of a structure is adjacent to or directly connected to the upper surface of the intervening structure, and the upper surface of the other structure is adjacent to or directly connected to the lower surface of the intervening structure, and the intervening structure can be a single-layer or multi-layer solid structure or non-solid structure, without limitation. In the disclosure, when a structure is arranged "on" another structure, it can mean that the structure is "directly" on the other structure, or that the structure is "indirectly" on the other structure, i.e. there is at least one structure between the structure and the other structure.

[0038] "first", "second", etc. in the present disclosure can be used herein to describe various elements, components, regions, layers and / or sections, but these elements, components, regions, and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Therefore, "a first element", "component", "region", "layer" or "section" discussed below is used to distinguish from "a second element", "component", "region", "layer" or "section", but not to limit the order or specific element, component, region, layer and / or section.

[0039] According to embodiments of the present disclosure, the width, thickness, height or area of each element, or the distance or spacing between elements can be measured using optical microscopy (OM), scanning electron microscope (SEM), thin film thickness profilometer (alpha-step), ellipsometer, or other suitable ways, but not limited thereto. In detail, according to some embodiments, a cross-sectional structure image including the elements to be measured can be obtained using a scanning electron microscope, and the width, thickness, height or area of each element, or the distance or spacing between elements can be measured, and the volume of the element can be obtained by suitable methods (e.g., integration). In addition, there can be a certain error for any two values or directions used for comparison.

[0040] The electronic device, such as the light emitting module or the light emitting device of the embodiments of the present disclosure, can have better bonding quality. The electronic device can include a display device, an antenna device, a sensing device, a tiled device, or a transparent display device, but is not limited thereto. The electronic device can be a rollable, stretchable, foldable, or flexible electronic device. The electronic device can include, for example, a liquid crystal, a light emitting diode (LED), a quantum dot (QD), fluorescence, phosphor, or other suitable material, and the materials can be arranged in any combination or other suitable display medium, or a combination thereof. The light emitting diode can include, for example, an organic light emitting diode (OLED), a mini / micro LED, a micro LED, or a quantum dot light emitting diode (QLED), but is not limited thereto. The antenna device can be, for example, a liquid crystal antenna, but is not limited thereto. The tiled device can be, for example, a display tiled device or an antenna tiled device, but is not limited thereto. It should be noted that the electronic device can be any combination of the above, but is not limited thereto. In addition, the electronic device can have a rectangular, circular, polygonal, curved edge shape, or other suitable shape. The electronic device can have a driving system, a control system, a light source system, a shelf system, and other peripheral systems to support the display device, the antenna device, or the tiled device. Hereinafter, the light emitting module or the light emitting device will be described as an electronic device, but the present disclosure is not limited thereto.

[0041] It should be understood that the following embodiments can be replaced, reorganized, mixed, and other embodiments can be completed by replacing, reorganizing, and mixing features in different embodiments without departing from the spirit of the present disclosure. Features in different embodiments can be mixed and used as long as they do not conflict with each other or the spirit of the invention.

[0042] Reference will now be made in detail to the exemplary embodiments of the present disclosure, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used in the drawings and the description to refer to the same or like parts.

[0043] FIG. 1A A top view of a light emitting device according to an embodiment of the present disclosure. FIG. 1B A top view of a light emitting device according to an embodiment of the present disclosure. FIG. 1A A cross-sectional view of the light emitting device of FIG. 1 along the section line A-A'. FIG. 1A A cross-sectional view of the light emitting device of FIG. 1 along the section line A-A'. FIG. 1B Some elements are omitted for clarity of the drawing and ease of explanation. FIG. 1A A cross-sectional view of the light emitting device of FIG. 1 along the section line A-A'. FIG. 1BThe light emitting device 1 includes a driving substrate SUB and a plurality of light emitting modules 10 disposed on the driving substrate SUB. In an embodiment, at least one light emitting module 10 is disposed on the driving substrate SUB. In some embodiments, the plurality of light emitting modules 10 can be arranged in an array of a plurality of horizontal rows or a plurality of vertical columns in the X-axis and / or the Y-axis, respectively. For example, the X-axis is a direction extending horizontally, e.g., left and right, and the Y-axis is a direction extending vertically, e.g., up and down. In some embodiments, the X-axis is perpendicular to the Y-axis, and the Z-axis is perpendicular to the X-axis or the Y-axis. The Z-axis is, for example, a normal direction of an upper surface of the driving substrate SUB or the light emitting module 10. The light emitting module 10 of the present embodiment can be electrically connected to the driving substrate SUB by bonding to the driving substrate SUB to emit light and / or display an image, so that the light emitting device 1 has the function of emitting light and / or displaying an image.

[0044] Please refer to FIG. 1B The driving substrate SUB of the present embodiment is, for example, a substrate including signal lines, and the substrate can include a rigid substrate or a flexible substrate. In some embodiments, the material of the rigid substrate includes, for example, glass, quartz, ceramics, sapphire, and the like, but the present disclosure is not limited thereto. In some embodiments, the flexible substrate can include a suitable flexible material, such as polycarbonate (PC), polyimide (PI), polypropylene (PP), polyethylene terephthalate (PET), other suitable materials, or a combination of the foregoing, but is not limited thereto. The material of the signal lines disposed on the substrate can be metal, including, for example, copper, aluminum, titanium, other suitable materials, alloys of the foregoing, or combinations of the foregoing, but is not limited thereto. The driving substrate SUB can further include an insulating layer disposed on the signal lines and the substrate, wherein a surface of the insulating layer away from the signal lines can be an upper surface US of the driving substrate SUB. On the upper surface US of the driving substrate SUB, a plurality of pads PD1, PD2, PD3, or CP can be disposed to electrically connect the light emitting module 10 in subsequent processes. In some embodiments, the driving substrate SUB is, for example, a printed circuit board (PCB) or a chip on film (COF), but is not limited thereto.

[0045] In some embodiments, the light emitting module 10 includes a circuit structure 200 and a plurality of light emitting units 300. The circuit structure 200 can be defined as a structure including at least a circuit, which can include a passive element (e.g., a capacitor), an active element (e.g., a thin film transistor), or both, but is not limited thereto. As shown in FIG. 1, the circuit structure 200 includes a plurality of pads 2131, 2132, 2133 disposed on a first side 201 of the circuit structure 200 and a plurality of pads 2481, 2482, 2483 disposed on a second side 202 of the circuit structure 200 opposite the first side 201. The circuit structure 200 further includes a redistribution circuit layer (RDL) disposed between the pads 2131, 2132, 2133 and the pads 2481, 2482, 2483. As an example of the redistribution circuit layer RDL, the redistribution circuit layer RDL includes a stack of three circuit layers CL1, CL2, CL3, but the number of circuit layers is not limited thereto and can be increased or decreased, as desired for product design. Each circuit layer includes a dielectric layer and a connection circuit. As an example of the circuit layer CL1, the connection circuit includes, for example, a circuit disposed on a surface of the dielectric layer 110, a connection portion disposed in an opening VAl extending through the dielectric layer 110, and a pad 2131 disposed on a bottom surface of the opening VAl (e.g., a top surface of the opening VAl, which is the surface closest to the light emitting unit 300). In some embodiments, the bottom surface can be defined as the surface of the opening VAl having the narrowest width. An upper surface of the pad 2131 can be flush with an upper surface of the dielectric layer of the circuit layer CL1, but is not limited thereto. Detailed descriptions of the structure of the connection circuit will be provided in subsequent paragraphs. FIG. 1B FIG. 1B FIG. 1B FIG. 1B

[0046] In some embodiments, the light emitting module 10 is configured, for example, by first disposing the light emitting units 300. The light emitting units 300 are, for example, light emitting diodes, but are not limited thereto. The light emitting units 300 include a first light emitting unit 301, a second light emitting unit 302, and a third light emitting unit 303. The first light emitting unit 301, the second light emitting unit 302, and the third light emitting unit 303 are, for example, light emitting units that emit the same color light or different color light, such as the first light emitting unit 301 emitting red light, the second light emitting unit 302 emitting green light, and the third light emitting unit 303 emitting blue light, but are not limited thereto. In other embodiments, the first light emitting unit 301, the second light emitting unit 302, and the third light emitting unit 303 can emit the same color light. In other embodiments, the light emitting units 300 can further include light emitting units that emit yellow light, orange light, white light, or other suitable colors.

[0047] FIG. 1C FIG. 2 is a cross-sectional view of a light emitting device according to another embodiment of the present disclosure. FIG. 1C ​​​​The light-emitting device and FIG. 1B The light-emitting devices are similar, the difference lies in FIG. 1C The light-emitting module 10' of the light-emitting device shown is, for example, based on the architecture of the circuit structure 200. In FIG. 1C In the illustrated embodiment, the redistribution layer RDL of the light-emitting module 10' comprises a stack of three circuit layers CL1, CL2, and CL3, but the number of circuit layers is not limited to a certain value. FIG. 1C As shown, the number of circuit layers can be increased or decreased, and can be adjusted according to product design requirements. Each circuit layer includes a dielectric layer and connecting lines. Taking circuit layer CL1 as an example, the connecting lines include, for example, lines extending from a surface of dielectric layer 110, a connection portion disposed within an opening VA1 penetrating dielectric layer 110, and a bottom surface (e.g., a bottom surface) disposed within the opening VA1. FIG. 1C The pad 2131B is located on the surface of the opening VA1 (away from the light-emitting unit 300). Specifically, the connection lines include lines extending on the upper surface of the dielectric layer 110. The lines may include pads 2131T located on the upper surface of the dielectric layer 110. In some embodiments, the lines may also extend on the lower surface of the dielectric layer 110; this architecture is described with reference to... FIG. 1B The configuration method.

[0048] The wiring (including pad 2131T) can be connected to the connection portion 2131C disposed within the opening VA1 to penetrate the dielectric layer 110. The connection portion 2131C can be connected to the pad 2131B located on the bottom surface within the opening VA1. From another perspective, the pad 2131B can be the surface of the connection portion 2131C with the narrowest width in the opening VA1, but is not limited thereto.

[0049] The connection lines of the circuit layer CL2 include lines disposed on the upper surface of the dielectric layer, and the lines include pads 2281T. Pads 2131B of the circuit layer CL1 are disposed on pads 2281T of the circuit layer CL2, and pads 2131B are electrically connected to pads 2281T. The connection lines of the circuit layer CL2 also include a connection portion 2281C disposed within the opening VA2 and pads 2281B located on the bottom surface within the opening VA2. The connection portion 2281C penetrates the dielectric layer, and the pad 2281B may be the narrowest surface of the connection portion 2281C within the opening VA2, but is not limited thereto.

[0050] The connection line of the circuit layer CL3 includes a line disposed on the upper surface of the dielectric layer, and the line includes the contact pad 2481T. The contact pad 2281B of the circuit layer CL2 is disposed on the contact pad 2481T of the circuit layer CL3, and the contact pad 2281B is electrically connected to the contact pad 2481T. The connection line of the circuit layer CL3 further includes a connection portion 2481C disposed in the opening VA3 and a contact pad 2481B on the bottom surface of the opening VA3. The connection portion 2481C penetrates the dielectric layer, and the contact pad 2481B can be the surface of the connection portion 2481C with the narrowest width in the opening VA3, but is not limited thereto.

[0051] In some embodiments, the contact pad 2481B can be electrically connected to the contact pad 2481 on the second side 202, but is not limited thereto. In other embodiments, the contact pad 2481B can be exposed on the second side 202 and flush with the second side 202.

[0052] In some embodiments, the light emitting module 10' further includes an encapsulation layer 191 or an encapsulation layer 192. The encapsulation layer 191 or the encapsulation layer 192 is disposed on the first side 201 and encapsulates the light emitting unit 300, respectively. The material of the encapsulation layer 191 or the encapsulation layer 192 includes optical glue, film plastic material (such as polyvinyl chloride (PVC)), epoxy resin, or other transparent materials, but is not limited thereto. The encapsulation layer 191 can be a rectangular cuboid with a substantially planar upper surface. The encapsulation layer 192 can be a substantially hemispherical body with an arc surface, but is not limited thereto.

[0053] Please refer to FIG. 1B and FIG. 1CThe circuit structure 200 of the light emitting module 10 or the light emitting module 10' of the embodiment includes a redistribution circuit layer RDL, pads 2131, 2132, 2133 disposed on the upper surface of the redistribution circuit layer RDL (which can be defined as the first side 201 of the circuit structure 200, which is the uppermost surface of the light emitting module 10 or the light emitting module 10' as a whole and is connected to the light emitting unit 300), and pads 2481, 2482, 2483, 242 disposed on the lower surface of the redistribution circuit layer RDL (which can be defined as the second side 202 of the circuit structure 200, which is the lowermost surface of the light emitting module 10 or the light emitting module 10' as a whole and is connected to the driving substrate SUB). The light emitting unit 300 is disposed on the pads 2131, 2132, 2133 of the first side 201 of the circuit structure 200. The pads 2481, 2482, 2483, 242 of the second side 202 of the circuit structure 200 can be electrically connected to the driving substrate SUB through the pads PD1, the pads PD2, the pads PD3, or the pads CP. For example, signals of the driving substrate SUB can be transmitted to the circuit structure 200. In the embodiment, since the dispersion degree between the pads 2481, 2482, 2483, 242 of the second side 202 of the circuit structure 200 can be greater than the dispersion degree between the pads 2131, 2132, 2133 of the first side 201 of the circuit structure 200, the distance between the pads 2481, 2482, 2483, 242 of the second side 202 can be more evenly dispersed, the risk of short circuit can be reduced, or the difficulty of bonding with the driving substrate can be reduced. In addition, the distance between the pads 2481, 2482, 2483, 242 of the second side 202 can be increased. In addition, since the pads 2481, 2482, 2483, 242 of the second side 202 of the circuit structure 200 can be reconfigured or integrated by the redistribution circuit layer RDL, the number of pads of the second side 202 of the circuit structure 200 can be reduced. The bonding quality of the light emitting module 10 or the light emitting module 10' and the driving substrate SUB can be improved. The light emitting device 1 can have better bonding quality or display quality.

[0054] FIG. 2A A top view of a first circuit layer of a light emitting module according to an embodiment of the disclosure. FIG. 2B A top view of a second circuit layer of a light emitting module according to an embodiment of the disclosure. FIG. 2C A top view of a third circuit layer of a light emitting module according to an embodiment of the disclosure. FIG. 2D A bottom view of a third circuit layer of a light emitting module according to an embodiment of the disclosure. For the sake of clarity of the drawings and convenience of description, FIG. 2A to FIG. 2D Some elements are omitted for illustration. Please refer to FIG. 1B , FIG. 1C and FIG. 2AThe circuit structure 200 of the light emitting module 10 includes a redistribution circuit layer RDL. The redistribution circuit layer RDL includes multiple circuit layers. FIG. 2A The upper surface 111 of the first circuit layer CL1, which is the uppermost layer of the redistribution circuit layer RDL, is shown as the first side 201 of the circuit structure 200. The first circuit layer CL1 includes, for example, a dielectric layer 110 and connection circuits. The material of the dielectric layer 110 can be an organic insulating layer including resin, epoxy, silicone, Polydimethylsiloxane (PDMS), polyvinyl acetate, polyvinyl, or polychloroprene, or other suitable materials, but is not limited thereto. In the above arrangement, the thickness of the dielectric layer 110 ranges from 0.1 microns to 10 microns, but is not limited thereto. In other embodiments, the material of the dielectric layer 110 can be an inorganic insulating layer including silicon oxide (SiO x ), silicon nitride (SiN x ), or aluminum oxide (AlO x ), or other suitable materials, but is not limited thereto. In the above arrangement, the thickness of the dielectric layer 110 ranges from 0.1 angstrom to 5000 angstroms, but is not limited thereto.

[0055] The circuit structure 200 includes a plurality of first contact pads 2121, 2122, 2123 disposed on the upper surface 111 of the first circuit layer CL1, i.e., the first side 201 of the circuit structure 200. The circuit structure 200 also includes a plurality of third contact pads 2131, 2132, 2133 disposed on the upper surface 111 of the first circuit layer CL1. The first contact pads 2121, 2122, 2123 can each correspond to the third contact pads 2131, 2132, 2133. For example, the first contact pad 2121 and the third contact pad 2131 can be disposed in pairs. The first contact pads 2122, 2123 can also be disposed in pairs with the third contact pads 2132, 2133, respectively. Taking the pair of the first contact pad 2121 and the third contact pad 2131 as an example, the first contact pad 2121 and the third contact pad 2131 can be connected to the first light emitting unit 301 of the light emitting unit 300, respectively. The first contact pad 2121 can be connected to the negative electrode (N-pole) of the first light emitting unit 301 as a reference electrode. The third contact pad 2131 can be connected to the positive electrode (P-pole) of the first light emitting unit 301 as a driving electrode. The above configuration is merely illustrative, and in other embodiments, the first contact pad 2121 can be connected to the positive electrode of the first light emitting unit 301, or the third contact pad 2131 can be connected to the negative electrode of the first light emitting unit 301. In addition, the positive electrode of the first light emitting unit 301 can be a reference electrode, and the negative electrode can be a driving electrode. That is, one of the two electrodes of the first light emitting unit 301 can be a reference electrode, and the other can be a driving electrode, without limitation.

[0056] The second light emitting unit 302 is electrically connected to the first contact pad 2122 and the third contact pad 2132. The third light emitting unit 303 is electrically connected to the first contact pad 2123 and the third contact pad 2133. The first contact pads 2121, 2122, 2123 can be connected to each other or can be electrically connected to a node C11 by a wire 214. The node C11 is, for example, a part of a connection wire of the first wire layer CL1. The node C11 includes, for example, a wire extending on the upper surface 111 (including an upper contact pad on the upper surface 111) and a connection portion in a via hole extending through the dielectric layer 110, and the connection portion at the bottom surface of the via hole can be used as a lower contact pad. In other words, the node C11 can include an upper contact pad on the dielectric layer 110, a lower contact pad under the dielectric layer 110, and a connection portion connecting the upper contact pad and the lower contact pad. In the present disclosure, a contact pad can be defined as a part of a connection wire, a conductive via hole, or a node adapted to contact other external elements or wires. For example, the first contact pads 2121, 2122, 2123 can be regarded as contact pad portions of the wire 214 for connecting external elements, such as the light emitting unit 300. In addition, the upper contact pad of the node C11 can be connected to the wire 214. In some embodiments, the connection portion of the node C11 can extend through the dielectric layer 110, and the first contact pads 2121, 2122, 2123 are integrated into the node C11 by the wire 214 to reach a second wire layer CL2 under the first wire layer CL1 (at FIG. 2B Description). In the above arrangement, the first contact pads 2121, 2122, 2123 can be adapted to be connected to a common voltage, and the number of contact pads is reduced by integrating the plurality of contact pads into the node C11.

[0057] In some embodiments, the third contact pads 2131, 2132, 2133 can be connected to conductive vias V1, V2, V3 by wires 214, respectively. Similar to the node C11, the conductive vias V1, V2, V3 can include an upper contact pad on the dielectric layer 110, a lower contact pad under the dielectric layer 110, and a connection portion connecting the upper contact pad and the lower contact pad, and thus will not be described again. The third contact pads 2131, 2132, 2133 can be connected to the upper contact pads of the conductive vias V1, V2, V3 by a plurality of wires 214, respectively. The connection portions of the conductive vias V1, V2, V3 extend through the dielectric layer 110 in the Z-axis direction to conduct the third contact pads 2131, 2132, 2133 from the upper surface 111 to a second wire layer CL2 under the first wire layer CL1 (at FIG. 2B Description). In the above arrangement, the third contact pads 2131, 2132, 2133 can be adapted to be connected to a driving voltage to drive the light emitting unit 300 to emit light or display an image.

[0058] In some embodiments, the third contact pads 2131, 2132, 2133 can have a width W2 in the X-axis. The width is defined as the maximum length of an element in the X-axis, for example, the width W2 is the maximum length of the third contact pad 2131 in the X-axis. The conductive vias V1, V2, V3 can have a width in the X-axis, and the width W2 of the third contact pads 2131, 2132, 2133 can be substantially the same as the width of the conductive vias V1, V2, V3, but the disclosure is not limited thereto. In some embodiments, the width of the conductive vias V1, V2, V3 can be greater than or less than the width W2 of the third contact pads 2131, 2132, 2133.

[0059] Referring to FIG. 1A, FIG. 2A and FIG. 2B , FIG. 2B FIG. 1B shows an upper surface 121 of the second circuit layer CL2. The upper surface 121 is disposed adjacent to the lower surface of the first circuit layer CL1. The second circuit layer CL2 includes a plurality of transmission nodes TN2, nodes C21, lines 226, and conductive vias V1, V2, V3 penetrating the dielectric layer 120. In some embodiments, the transmission nodes TN2 can be contact pads of the lines 226, can be disposed corresponding to the nodes C11 penetrating the first circuit layer CL1, and are electrically connected to the lower contact pads of the nodes C11. The plurality of transmission nodes TN2 can be connected to each other by the lines 226, or integrated into the nodes C21. Similar to the nodes C11, the nodes C21 can include upper contact pads on the dielectric layer 120, lower contact pads under the dielectric layer 120, and connecting portions connecting the upper contact pads and the lower contact pads, and the connecting portions penetrate the dielectric layer 120, and thus are not described again. Under the above-mentioned arrangement, the plurality of transmission nodes TN2 can be integrated into the nodes C21. In other words, the plurality of nodes C11 of the first circuit layer CL1 are integrated into the nodes C21 by the transmission nodes TN2 and the lines 226, and the number of the nodes C11 can be greater than the number of the nodes C21. In addition, the number of the first contact pads 2121, 2122, 2123 can be greater than the number of the nodes C11. In this way, the circuit structure 200 integrates the first contact pads 2121, 2122, 2123 into the nodes C21 by reconfiguring and / or integrating the lines of the nodes or the transmission nodes in the circuit layers (for example, the first circuit layer CL1 and the second circuit layer CL2) of the redistribution circuit layer RDL, reduces the number of the first contact pads 2121, 2122, 2123 (for example, 48) to the number of the nodes C21 (for example, 2). Therefore, the light emitting module 10 can reduce the number of contact pads by the redistribution circuit layer of the circuit structure 200, reduce the risk of short circuit, or reduce the difficulty of bonding with the driving substrate.

[0060] Referring to FIG. 1A, FIG. 1B , FIG. 1C , FIG. 2B and FIG. 2C , FIG. 2CThe upper surface 131 of the third circuit layer CL3 is shown, which faces the lower surface of the second circuit layer CL2. In some embodiments, the upper surface 131 of the third circuit layer CL3 contacts the lower surface of the second circuit layer CL2. The third circuit layer CL3 includes the dielectric layer 130, the lines 234, 236 and the transmission node TN3 disposed on the upper surface 131, and the nodes 2381, 2382, 2383 and the node C31 penetrating through the dielectric layer 130.

[0061] In some embodiments, the conductive vias V1, V2, V3 can penetrate through the dielectric layer 110 or the dielectric layer 120, and the bottom surfaces (i.e. lower pads) of the conductive vias V1, V2, V3 are exposed by the lower surfaces of the dielectric layer 110 or the dielectric layer 120. The pads P1, P2, P3 are disposed on the upper surface 131 and correspondingly electrically connected to the bottom surfaces of the conductive vias V1, V2, V3. The pads P1, P2, P3 can be electrically connected to the nodes 2381, 2382, 2383 through the lines 234, respectively. Similar to the connecting lines or nodes of the first circuit layer CL1 or the second circuit layer CL2, the pads P1, P2, P3 can be pad portions of the lines 234. The nodes 2381, 2382, 2383 can include upper pads on the dielectric layer 130, lower pads under the dielectric layer 130, and connecting portions connecting the upper pads and the lower pads, and the connecting portions penetrate through the dielectric layer 130, thus not described in detail. As shown, the nodes 2381, 2382, 2383 can be arranged in an array on the X-axis and the Y-axis. For example, the nodes 2381 can be arranged in a straight line along the Y-axis. The nodes 2382 can be arranged in a straight line along the Y-axis and separated from the nodes 2381. The straight lines of the nodes 2382, 2383 can be arranged on one side of the nodes 2381 on the X-axis. The pattern of the lines 234 connecting the pads P1, P2, P3 and the nodes 2381, 2382, 2383 is not limited to the above-mentioned pattern, and can be any pattern as long as the pads P1, P2, P3 and the nodes 2381, 2382, 2383 are electrically connected. FIG. 2C As shown, the nodes 2381, 2382, 2383 can be arranged in an array on the X-axis and the Y-axis. For example, the nodes 2381 can be arranged in a straight line along the Y-axis. The nodes 2382 can be arranged in a straight line along the Y-axis and separated from the nodes 2381. The straight lines of the nodes 2382, 2383 can be arranged on one side of the nodes 2381 on the X-axis. The pattern of the lines 234 connecting the pads P1, P2, P3 and the nodes 2381, 2382, 2383 is not limited to the above-mentioned pattern, and can be any pattern as long as the pads P1, P2, P3 and the nodes 2381, 2382, 2383 are electrically connected. FIG. 2CThe third contact pads 2131, 2132, 2133 can be reconfigured in the re- routing layer RDL through the contact pads P1, P2, P3, the conductive vias V1, V2, V3, the lines 234 and the nodes 2381, 2382, 2383 in some embodiments. The re-configuration is defined as the conductive vias V1, V2, V3 (to the contact pads P1, P2, P3) and the nodes 2381, 2382, 2383 can not overlap, the third contact pads 2131, 2132, 2133 and the nodes 2381, 2382, 2383 can not overlap, and the number of the third contact pads 2131, 2132, 2133, the number of the conductive vias V1, V2, V3, the number of the contact pads P1, P2, P3 and the number of the nodes 2381, 2382, 2383 can be the same, but the application is not limited thereto.

[0062] In this way, the distance between the nodes 2381, 2382, 2383 (and their connected contact pads on the second side 202) can be evenly distributed, so that the distribution between the contact pads can be improved, the distance between the contact pads can be increased, the risk of short circuit can be reduced, or the difficulty of engaging with the driving substrate can be reduced. The engagement quality of the light emitting module 10 or the light emitting module 10' and the driving substrate SUB can be improved. The light emitting device 1 can have better engagement quality or display quality.

[0063] In some embodiments, the transmission nodes TN3 disposed on the upper surface 131 are, for example, pads corresponding to the bottom surfaces of the nodes C21 exposed by the lower surface of the second circuit layer CL2. The transmission nodes TN3 can be electrically connected to the bottom surfaces of the nodes C21. The transmission nodes TN3 can be electrically connected to the nodes C31 through the circuit lines 236. Similar to the nodes C21, the nodes C31 can include upper pads on the dielectric layer 130, lower pads under the dielectric layer 130, and connecting portions connecting the upper pads and the lower pads, and the connecting portions pass through the dielectric layer 130, and thus are not described again. Under the above arrangement, the plurality of transmission nodes TN3 can be integrated into the nodes C31, and pass through the connecting portions of the nodes C31 to the other side of the third circuit layer CL3. The number of the first pads 2121, 2122, 2123 is greater than the number of the nodes C11, greater than the number of the nodes C21, and greater than the number of the nodes C31. In this way, the circuit structure 200 further reconfigures and / or integrates the first pads 2121, 2122, 2123 into the nodes C31 through the nodes or transmission nodes of the circuit layers in the redistribution circuit layer RDL. In this way, the number of the first pads 2121, 2122, 2123 is further reduced to the number of the nodes C31 (for example, 1). Therefore, the light emitting module 10 or the light emitting module 10' can effectively reduce the number of pads, reduce the risk of short circuit, or reduce the difficulty of bonding with the driving substrate through the redistribution circuit layer of the circuit structure 200.

[0064] In some embodiments, the configuration pattern of the nodes 2381, 2382, 2383 and the pads P1, P2, P3 is not limited. On the Z-axis, the nodes 2381, 2382, 2383 do not overlap the conductive vias V1, V2, V3 or the pads P1, P2, P3. On the Z-axis, the transmission nodes TN3 do not overlap the nodes 2381, 2382, 2383. The nodes C31 do not overlap the nodes 2381, 2382, 2383.

[0065] Please refer to FIG. 2C and FIG. 2D , FIG. 2D The lower surface 132 of the third circuit layer CL3, that is, the second side 202 of the circuit structure 200, is shown in some embodiments, as shown in FIG. 1B or FIG. 1C , which faces the upper surface US of the driving substrate SUB. The lower surface 132 of the third circuit layer CL2 contacts the lower surface of the second circuit layer CL2. The connecting circuit lines include, for example, the pads 2481, 2482, 2483.

[0066] In some embodiments, FIG. 2D indicates the lower surface of the connecting structure, that is, the fourth pads 2481, 2482, 2483 on the second side 202 (as shown in FIG. 1B or FIG. 1CThe lower contact pad of node C31 can be located on the lower surface 132 of the third line layer CL3, i.e., the second side 202 of the line structure 200 and the second contact pad 242. In some embodiments, the width W6 of the second contact pad 242 can be the same as or different from the width of the fourth contact pads 2481, 2482, 2483. For example, FIG. 2D The width W6 of the second contact pad 242 in the X direction can be greater than the width of the fourth contact pads 2481, 2482, or 2483 in the X direction, but not limited thereto. In other embodiments, the width W6 of the second contact pad 242 in the X direction can be equal to or less than the width of the fourth contact pads 2481, 2482, or 2483 in the X direction. In some embodiments, as shown in FIG. 2, the area of the second contact pad 242 on the lower surface 132 of the light emitting module 10 is greater than the area of one of the first contact pads 2121, 2122, 2123. FIG. 2D FIG. 2A The area of the second contact pad 242 on the lower surface 132 of the light emitting module 10 is greater than the area of one of the first contact pads 2121, 2122, 2123.

[0067] In some embodiments, the fourth contact pads 2481, 2482, 2483 of the second side 202 can be electrically connected to the third contact pads 2131, 2132, 2133 of the first side 201 through the conductive vias V1, V2, V3 and the redistribution line layer RDL that penetrates the multiple line layers. In the above arrangement, the third contact pads 2131, 2132, 2133 are electrically connected to the corresponding fourth contact pads 2481, 2482, 2483 through the redistribution line layer RDL. In this way, the number of the third contact pads 2131, 2132, 2133 is equal to the number of the fourth contact pads 2481, 2482, 2483. Thus, the fourth contact pads 2481, 2482, 2483 and the second contact pad 242 can serve as the contact pads on the lower surface of the light emitting module 10 to receive the driving signals from the contact pads PD1, PD2, PD3, CP of the driving substrate SUB (shown in FIG. 1). FIG. 1A FIG. 1B The driving signals can be transmitted from the fourth contact pads 2481, 2482, 2483, the second contact pad 242, and the redistribution line layer RDL to the third contact pads 2131, 2132, 2133, the first contact pads 2121, 2122, 2123, and the light emitting units 300 connected thereto. In this way, the light emitting units 300 can emit light or generate display images after receiving the driving signals.

[0068] ​​In some embodiments, the bottom surface of the node C31 can have pads corresponding to the second pads 242. In other embodiments, the bottom surface of the node C31 can serve as the second pads 242, but not limited thereto. The second pads 242 of the second side 202 can be reconfigured or integrated by connection lines in the redistribution layer RDL. The first pads 2121, 2122, 2123 of the first side 201 can be electrically connected to the second pads 242 of the second side 202 through the redistribution layer RDL. The redistribution layer RDL is disposed between the first pads 2121, 2122, 2123 and the second pads 242. Since the first pads 2121, 2122, 2123 can be reconfigured or integrated by connection lines in the redistribution layer RDL, the number of the first pads 2121, 2122, 2123 can be greater than the number of the second pads 242.

[0069] It is worth noting that since the number of the first pads 2121, 2122, 2123 can be reduced after reconfiguration or integration, the number of the second pads 242 disposed on the second side 202 can be less than the number of the first pads 2121, 2122, 2123. In addition, the number of the transmission nodes TN2, TN3 for integrating the first pads 2121, 2122, 2123 is less than the number of the first pads 2121, 2122, 2123 and greater than the number of the second pads 242. Furthermore, for example, the transmission node TN2 can have a width in the X direction greater than the width of one of the first pads 2121, 2122, 2123 in the X direction and less than the width of the second pad 242 in the X direction, but not limited thereto. In addition, the third pads 2131, 2132, 2133 of the first side 201 can be reconfigured to the fourth pads 2481, 2482, 2483 of the second side 202. In this way, the total number of pads on the second side 202 can be reduced, and the dispersion between the second pads 242 and the fourth pads 2481, 2482, 2483 can be greater than the dispersion between the first pads 2121, 2122, 2123 and the third pads 2131, 2132, 2133 of the first side 201 of the circuit structure 200, so that the distance between the pads of the second side 202 can be more evenly dispersed, reducing the risk of short circuit or reducing the difficulty of bonding with the driving substrate. In addition, the distance between the pads of the second side 202, including the fourth pads 2481, 2482, 2483 and the second pads 242, can be increased. In addition, since the pads of the second side 202 of the circuit structure 200 can be reconfigured or integrated by the redistribution layer RDL, the number of the pads of the second side 202 of the circuit structure 200 can be reduced. The bonding quality of the light emitting module 10 or the light emitting module 10' and the driving substrate SUB can be improved. The light emitting device 1 can have better bonding quality or display quality.

[0070] In some embodiments, the first contact pads 2121, 2122, 2123 and the second contact pad 242 can be configured to receive a common voltage, but the disclosure is not limited thereto. In other embodiments, the first contact pads 2121, 2122, 2123 and the second contact pad 242 can also receive a driving voltage. In some embodiments, the common voltage or the driving voltage can be a direct current voltage or an alternating current voltage, but the disclosure is not limited thereto. The second contact pad 242, as a contact pad of the lower surface of the light emitting module 10, receives a common voltage signal of a contact pad CP of a driving substrate SUB (shown in FIG. 1A and FIG. 1B ). In other words, each light emitting module 10 is electrically connected to the driving substrate SUB through the second contact pad 242. The common voltage signal can be transmitted to the first contact pads 2121, 2122, 2123 and the light emitting units 300 connected thereto through the second contact pad 242 and the redistribution layer RDL. In this way, the number of the first contact pads 2121, 2122, 2123 connected to the common signal can be reduced, the risk of short circuit can be reduced, or the difficulty of bonding with the driving substrate can be reduced. The bonding quality of the light emitting module 10 or the light emitting module 10' and the driving substrate SUB can be improved. The light emitting device 1 can have better bonding quality or display quality.

[0071] Other embodiments will be described below. It must be noted that the following embodiments use the element numbers and some contents of the previous embodiments, in which the same numbers are used to represent the same or similar elements, and the description of the same technical contents is omitted. The description of the omitted part can be referred to the previous embodiments, and the following embodiments will not be repeated.

[0072] FIG. 3A is a top view of a third circuit layer of a light emitting module according to another embodiment of the disclosure. The third circuit layer of the present embodiment is substantially similar to the third circuit layer of FIG. 2C , and therefore the same and similar components in the two embodiments will not be repeated. FIG. 3A and FIG. 2C The main difference between the embodiments shown in FIG. 2A and FIG. 2B is that the node C31 can correspond toThe connection portion of node C11 can penetrate through dielectric layer 110 to electrically connect the lower surface of the contact pad to the upper contact pad of transmission node TN2 on dielectric layer 120. The connection portion of transmission node TN2 can further penetrate through dielectric layer 120 to electrically connect to the upper contact pad of node C31 of third circuit layer CL3. In this way, the present embodiment can perform circuit reconfiguration or circuit integration through the circuit of the bottommost layer of the redistribution layer RDL, such as the third circuit layer CL3. In addition, the area of node C31 can be greater than the area of the first contact pad 2121, 2122, 2123, the conductive via V1, V2, V3, or the node 2381, 2382, 2383, but the present embodiment is not limited thereto. In addition, the node 2381, 2382, 2383 can also be a via penetrating through the redistribution layer RDL and corresponding to the position of the fourth contact pad 2481, 2482, 2483 on the lower surface 132 of the third circuit layer CL3 (please refer to FIG. 2D ) of the fourth circuit layer CL4. In this way, the circuit structure of the present embodiment can achieve the same technical effects as the previous embodiments.

[0073] FIG. 3B FIG. 10 is a top view of the third circuit layer of the light emitting module according to another embodiment of the present disclosure. The third circuit layer of the present embodiment is substantially similar to the third circuit layer of FIG. 2C , and therefore the same and similar components in the two embodiments will not be repeated here. FIG. 3B The main difference between the present embodiment and the embodiments shown in FIG. 2C is that the nodes 2381, 2382, 2383 are arranged adjacent to the corresponding contact pads P1, P2, P3, respectively. The nodes 2381, 2382, 2383 are electrically connected to the contact pads P1, P2, P3, respectively, through the circuit 234. After penetrating through the dielectric layer 130, the nodes 2381, 2382, 2383 can be further reconfigured or integrated through the connection circuit of other circuit layers. That is, the light emitting module of the present embodiment can gradually arrange the nodes in multiple layers of the redistribution layer RDL to gradually arrange the third contact pad 2131, 2132, 2133 to the position of the fourth contact pad 2481, 2482, 2483 as shown in FIG. 2D . In this way, the nodes 2381, 2382, 2383 of the third circuit layer CL3 can not overlap or correspond to the position of the fourth contact pad 2481, 2482, 2483. In addition, the node C31 can not penetrate through all of the redistribution layer RDL, but after penetrating through the dielectric layer 130, the node C31 can be reconfigured or integrated through the connection circuit of other circuit layers to be arranged at the position of the second contact pad 242 as shown in FIG. 2D .

[0074] FIG. 3CThis is a top view schematic diagram of the third circuit layer of a light-emitting module according to another embodiment of this disclosure. The third circuit layer of this embodiment is generally similar to... FIG. 2C The third circuit layer, therefore the same and similar components in both embodiments will not be repeated here. FIG. 3C and FIG. 2C The main difference in the illustrated embodiments is that multiple small-area transmission nodes can be consolidated into a large-area transmission node, or the areas of transmission nodes on the same line layer can be different. For example, transmission node TN3 can be electrically connected to node C31 via line 226 for line reconfiguration or line integration. Furthermore, the area of ​​some transmission nodes TN3' can be larger than the area of ​​transmission node TN3. For example, the area of ​​transmission node TN3' can be 2 to 10 times the area of ​​transmission node TN3, but is not limited thereto. In some embodiments, multiple nodes C11 and C21 of the first line layer CL1 or the second line layer CL2 can be electrically connected to transmission node TN3' after penetrating dielectric layer 110 or dielectric layer 120. In this way, the large-area transmission node TN3' can integrate multiple nodes C11 and C21, further reducing the number of pads and transmission nodes. The large-area transmission node TN3' can reduce impedance, further improving the electrical quality of the light-emitting module 10.

[0075] FIG. 4 This is a top view schematic diagram of the third circuit layer of a light-emitting module according to another embodiment of this disclosure. The third circuit layer of this embodiment is generally similar to... FIG. 2C The third circuit layer, therefore the same and similar components in both embodiments will not be repeated here. FIG. 4 and FIG. 2C The main difference in the illustrated embodiment is that the third circuit layer can be divided into two sides on opposite sides of the center line M. FIG. 4 To the left of the center line M, pad P1 of the third line layer CL3 can be connected to the upper pad of node 2381 via line 234. In this embodiment, only pad P1 can be electrically connected to node 2381 in the third line layer CL3 to achieve line reconfiguration and / or integration of node 2281. This reduces signal interference and / or noise, improving electrical quality. Node 2382 or node 2383 can then be reconfigured and / or integrated in other line layers (e.g., the fourth or fifth line layer).

[0076] exist FIG. 4The third circuit layer CL3 can selectively configure the nodes 2381, 2382, 2383 and electrically connect to the pads P1, P2, P3, respectively, on the right side of the middle line M of the light emitting module 10. For example, the pad P2 can be electrically connected to the node 2382 through the circuit 234. The pad adjacent to the pad P2 on the Y-axis is not electrically connected to the node 2381 through the circuit 234, but is electrically connected to the pad P1 through the circuit 234 after one pad P3 on the Y-axis. Then, the pad P3 can be electrically connected to the node 2383 through the circuit 234 after one pad P2 on the Y-axis. That is, every two pads electrically connected to each other are separated by one pad not electrically connected to each other. In this way, the nodes or circuits that are reconfigured and / or integrated can be reduced, and the signal interference and / or noise can be reduced, thereby improving the electrical quality. In addition, the light emitting module of the present embodiment can achieve the same technical effects as the previous embodiments.

[0077] FIG. 5 FIG. 13 is a bottom view of a third circuit layer of a light emitting module according to another embodiment of the present disclosure. The third circuit layer of the present embodiment is substantially similar to the third circuit layer of the light emitting module 10 shown in FIG. 11, and thus the same and similar components in the two embodiments will not be repeated here. FIG. 2D FIG. 5 FIG. 2D The main difference between the present embodiment and the embodiment shown in FIG. 11 is that FIG. 5 The lower surface 132 of the third circuit layer CL3 (i.e., the second side of the light emitting module 10”) is shown. In the present embodiment, the areas of the fourth pads 2481’, 2482’, 2483’ on the lower surface 132 of the light emitting module 10” are greater than the areas of the third pads 2131, 2132, 2133 shown in FIG. 11. FIG. 2A In some embodiments, the areas of the third pads 2131, 2132, 2133 and other nodes (e.g., the nodes 2381, 2382, 2383 of the third circuit layer CL3 shown in FIG. 12) in the re-wiring layer RDL can be the same, and the areas of the fourth pads 2481’, 2482’, 2483’ of the third circuit layer CL3 are increased. FIG. 2C In other embodiments, the areas of the nodes in different circuit layers in the re-wiring layer RDL can gradually increase. For example, the areas of the nodes 2381, 2382, 2383 of the third circuit layer CL3 can be greater than the areas of the third pads 2131, 2132, 2133, and the areas of the fourth pads 2481’, 2482’, 2483’ can be greater than the areas of the nodes 2381, 2382, 2383 or the areas of the third pads 2131, 2132, 2133, but not limited thereto. Since the circuit structure of the light emitting module 10” can reduce the number of pads, reduce the risk of short circuit, increase the area of the pads, or reduce the difficulty of bonding with the driving substrate SUB, the bonding quality of the light emitting module 10” and the driving substrate SUB can be improved.​​

[0078] In addition, the position of the second contact pad 242' can be reconfigured to be surrounded by the fourth contact pads 2481', 2483', and / or 2482'. Furthermore, the spacing between the second contact pad 242' and the fourth contact pads 2481', 2483', and / or 2482' can be substantially the same, or can be evenly distributed, thus having a better dispersion. As such, the quality of the bonding between the light emitting module 10" and the driving substrate SUB can be improved. The definition of dispersion will be described in subsequent paragraphs. Furthermore, the light emitting module of the present embodiment can achieve the same technical effects as the aforementioned embodiments.

[0079] FIG. 6A A top view of a light emitting module according to another embodiment of the present disclosure is shown. The circuit structure of the present embodiment is substantially similar to that of FIG. 2A , thus the same and similar components in both embodiments will not be repeated here. FIG. 6A The light emitting module 10 shown is, for example, first provided with a circuit structure. FIG. 6A and FIG. 2A The main difference between the embodiment shown and FIG. 2A is that the width W1 of the conductive vias V1, V2, V3 in the Y direction is greater than the width W2 of the third contact pads 2131, 2132, 2133 in the Y direction. In the present embodiment, since the contact pads or vias are square when viewed in the Z axis, the width in the X axis can be substantially the same as the width in the Y axis. In some embodiments, the area of the conductive vias V1, V2, V3 is greater than the area of the third contact pads 2131, 2132, 2133 when viewed in the Z axis. In addition, the width or area of the third contact pads 2131, 2132, 2133 can be equal to the width or area of the first contact pads 2121, 2122, 2123, but is not limited thereto.

[0080] FIG. 6B A cross-sectional view of the light emitting module of FIG. 6A along the section line B-B' is shown. For the sake of clarity and convenience of description, FIG. 6B some elements are omitted. Please refer to FIG. 1C , FIG. 6A and FIG. 6B , FIG. 6B The light emitting module shown is first provided with a circuit layer in the process. FIG. 1C and FIG. 6B The light emitting module of the embodiment shown is similar to that of FIG. 6B , thus the same and similar components in both embodiments will not be repeated here. For example, the light emitting module is first completed with the fabrication of the redistribution layer RDL of the circuit structure, and then the light emitting unit 300 (e.g., the first light emitting unit 301) is bonded on the first contact pad 2121 and the third contact pad 2131 of the circuit structure.

[0081] For example, the re-wiring RDL includes two layers of wiring CL1, CL2. The first wiring layer CL1 is, for example, the uppermost wiring layer and the second wiring layer CL2 is the lowermost wiring layer. The first wiring layer CL1 includes a dielectric layer 110 and connection wiring. The connection wiring includes, for example, a wire 214 disposed extending on an upper surface of the dielectric layer 110 and a connection portion 2131C that penetrates the dielectric layer 110. In detail, the upper surface of the dielectric layer 110 is provided with a first pad 2121, a third pad 2131, and a node C11. The wire 214 can connect the third pad 2131 to an upper pad 2131T of a conductive via V1. The conductive via V1 includes an upper pad 2131T, a lower pad 2131B on the dielectric layer 110, and a connection portion 2131C connecting the upper pad 2131T and the lower pad 2131B, and the connection portion 2131C penetrates the dielectric layer 110, and thus will not be described again. As previously described, the lower pad 2131B can be defined as a bottom surface of the connection portion 2131C of the conductive via V1. The wire 214 can connect the first pad 2121 to an upper pad of the node C11. As previously described, the node C11 includes an upper pad, a lower pad on the dielectric layer 110, and a connection portion connecting the upper pad and the lower pad, and the connection portion penetrates the dielectric layer 110, and thus will not be described again. The second wiring layer CL2 includes a dielectric layer 120 and connection wiring. The connection wiring includes, for example, a wire disposed extending on an upper surface of the dielectric layer 120 and a connection portion 2281C that penetrates the dielectric layer 120. In detail, the dielectric layer 120 is provided with a node 2281 and a node C21. An upper pad 2281T of the node 2281 contacts a lower pad 2131B of the conductive via V1. A connection portion 2281C of the node 2281 penetrates the dielectric layer 120 and connects the upper pad 2281T and a lower pad 2281B. As previously described, an upper pad of the node C21 contacts a lower pad of the node C11. A connection portion of the node C21 penetrates the dielectric layer 120 and connects the upper pad and the lower pad. A pad PD, PD’ is disposed on a lower surface of the dielectric layer 120. A lower pad 2281B of the node 2281 contacts the pad PD. A lower pad of the node C21 contacts the pad PD’. In some embodiments, the pads or nodes can be a single layer of metal including molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), hafnium (Hf), nickel (Ni), chromium (Cr), cobalt (Co), zirconium (Zr), tungsten (W), aluminum (Al), copper (Cu), argentum (Ag), other suitable conductive metals, or alloys or combinations of the above, but are not limited thereto.In some embodiments, the composition of the pads and the nodes can also be a multi-layer metal layer stack, and the thickness can be 100 angstroms to 2000 angstroms, but not limited thereto.

[0082] The third pad 2131 is connected to the conductive via V1 by the line 214. The first pad 2121 is electrically connected to the contact C11. The conductive via V1 penetrates the dielectric layer 110 to electrically connect to the node 2281. The contact C11 penetrates the dielectric layer 110 to connect to the node C21. The node 2281 penetrates the dielectric layer 120 to electrically connect to the pad PD. The node C21 penetrates the dielectric layer 120 to electrically connect to the pad PD'. Thus, the third pad 2131 of the first side is reconfigured and / or integrated by the redistribution line layer RDL to connect to the pad PD of the second side. The pad PD can be the fourth pad in the aforementioned embodiments. The first pad 2121 of the first side is reconfigured and / or integrated by the redistribution line layer RDL to connect to the pad PD' of the second side. The pad PD' can be the second pad in the aforementioned embodiments. The pad PD and the pad PD' can be connected to the driving substrate in the subsequent process, but not limited thereto.

[0083] The first light emitting unit 301 is electrically connected to the first pad 2121 and the third pad 2131. The first electrode 310 of the first light emitting unit 301 is, for example, a positive electrode, and is electrically connected to the third pad 2131 to receive a driving voltage signal. The second electrode 320 is, for example, a negative electrode, and is electrically connected to the first pad 2121 to receive a common voltage signal, but not limited thereto.

[0084] Please refer to FIG. 6A and FIG. 6B In some embodiments, the width W3 of the first electrode 310 is less than the width W2 of the third pad 2131. The width W2 of the third pad 2131 is less than the width W1 of the conductive via V1. The width W1 of the conductive via V1 can be defined as the maximum distance of the bottom of the conductive via V1 in the dielectric layer 110 opening, that is, the width of the lower pad 2131B. This is based on the consideration of improving the bonding quality and / or yield, which can make the width W2 of the third pad 2131 greater than the width W3 of the electrode 310. In addition, in order to reduce impedance or avoid signal variation problems caused by impedance during reconnection, the width W1 of the conductive via V1 can be increased to be greater than the width W2 of the third pad 2131. In addition, in order to correspond to the re-integrated internal connection line, reduce the line coupling problem or reduce the signal transmission abnormality, the spacing width W5 between the first pad 2121 and the third pad 2131 in the X direction will be less than the spacing width W4 between the pad PD and the pad PD' in the X direction.

[0085] Furthermore, the thickness of the dielectric layer 110 of the first circuit layer CL1 can be set to be less than the thickness of the dielectric layer 120 of the second circuit layer CL2. The aforementioned thickness is defined as the maximum distance between the dielectric layers along the Z-axis. By increasing the thickness of the dielectric layer closest to the bottom layer, the impact of circuit coupling can be reduced. In addition, the volumes of nodes 2281 and C21 in the second circuit layer CL2 can be increased. For example, the width W6 of the bottom pad at the bottom of the opening of node C11 in dielectric layer 110 is less than the width W7 of the bottom pad at the bottom of the opening of node C21 in dielectric layer 120. Thus, the volume of node C21 is greater than the volume of node C11. Similarly, the volume of node 2281 is greater than the volume of the conductive via V1. This further reduces circuit coupling problems or signal transmission anomalies.

[0086] FIG. 7A This is a top view schematic diagram of a light-emitting module according to another embodiment of this disclosure. FIG. 7B for FIG. 7A A cross-sectional view of the light-emitting module along section line C-C'. For clarity and ease of explanation, the accompanying diagram is shown. FIG. 7A Several elements are omitted. FIG. 7A The light-emitting module shown is, for example, an architecture where the light-emitting units are first set up. The circuit structure of this embodiment is roughly similar to... FIG. 1B or FIG. 6B The circuit structure is such that the same and similar components in both embodiments will not be repeated here. FIG. 7B and FIG. 6B The main difference in the illustrated embodiments is that, FIG. 7B The light-emitting module shown is a light-emitting module that is fabricated first in the manufacturing process of the light-emitting unit. For example, the light-emitting unit 300 is set first, and then the redistribution layer RDL of the circuit structure is fabricated on the light-emitting unit 300.

[0087] For example, the first light-emitting unit 301, the second light-emitting unit 302, and the third light-emitting unit 303 are disposed on a temporary carrier plate (not shown). Then, the first light-emitting unit 301, the second light-emitting unit 302, and the third light-emitting unit 303 are encapsulated by an encapsulation layer 190. The encapsulation layer 190 includes, but is not limited to, a film-plastic material or epoxy resin. The encapsulation layer 190 may expose the first electrode 310.

[0088] Next, a redistribution layer (RDL) is formed on the encapsulation layer 190. The redistribution layer (RDL) includes two circuit layers CL1, CL2. The dielectric layer 110 of the first circuit layer CL1 includes a plurality of openings VA1, and the third contact pads 2131, 2132, 2133 are filled in the openings VA1 to electrically connect to the first electrodes 310. Specifically, the first circuit layer CL1 includes the dielectric layer 110 and connection lines. The connection lines include lines extending on the surface of the dielectric layer 110, contact pads, and connection portions penetrating the dielectric layer 110. The third contact pad 2131 includes a lower contact pad 2131B disposed on the surface of the dielectric layer 110, an upper contact pad 2131T located at the bottom of the opening VA1, and a connection portion 2131C penetrating the opening VA1 and connecting the lower contact pad 2131B and the upper contact pad 2131T. The lower contact pad 2131B is connected to the line 214 disposed on the surface of the dielectric layer 110. Similarly, the third contact pad 2132 includes a lower contact pad 2132B disposed on the surface of the dielectric layer 110, an upper contact pad 2132T located at the bottom of the opening, and a connection portion 2132C penetrating the opening and connecting the lower contact pad 2132B and the upper contact pad 2132T. The third contact pad 2133 includes a lower contact pad 2133B disposed on the surface of the dielectric layer 110, an upper contact pad 2133T located at the bottom of the opening, and a connection portion 2133C penetrating the opening and connecting the lower contact pad 2133B and the upper contact pad 2133T. The upper contact pads 2131T, 2132T, 2133T are electrically connected to the first electrodes 310 of the light emitting elements 301, 302, 303, respectively. The dielectric layer 120 of the second circuit layer CL2 is disposed on the dielectric layer 110 and has a plurality of openings VA2. Specifically, the second circuit layer CL2 includes the dielectric layer 120 and connection lines. The connection lines include lines extending on the surface of the dielectric layer 120, conductive vias, and connection portions penetrating the dielectric layer 120. The conductive via V1 includes a lower contact pad 2281B disposed on the surface of the dielectric layer 120, an upper contact pad 2281T located at the bottom of the opening VA2, and a connection portion 2281C penetrating the opening VA2 and connecting the lower contact pad 2281B and the upper contact pad 2281T. The upper contact pad 2281T is electrically connected to the line 214 and the lower contact pad 2131B. Similarly, the conductive via V3 includes a lower contact pad 2283B disposed on the surface of the dielectric layer 120, an upper contact pad 2283T located at the bottom of the opening, and a connection portion 2283C penetrating the opening and connecting the lower contact pad 2283B and the upper contact pad 2283T. The upper contact pad 2283T is electrically connected to the line 214 and the lower contact pad 2133B.

[0089] The lower pads 2281B and 2283B can be used to connect external components or circuits. In some embodiments, the lower pads 2281B and 2283B can be the fourth pads on the second side, used for electrical connection to the driving substrate. Conductive vias V1 and V3 can be electrically connected to line 214 or the third pads 2131 and 2133 through openings VA1 and VA2. After completing the above process, the entire light-emitting module is separated from the temporary carrier board and transferred to a target substrate with circuitry (e.g., [missing information]). FIG. 1B The driving substrate SUB shown.

[0090] FIG. 7C for FIG. 7A The diagram shows a cross-sectional view of the light-emitting module along section line D-D'. For clarity and ease of explanation, the accompanying drawings are provided. FIG. 7C Several components are omitted from the diagram. Please refer to [link / reference]. FIG. 7A and FIG. 7C The connecting portion and upper pad of the conductive via V2 can be electrically connected to the line 214 or the third pad 2132 through the opening. The first electrode 310 of the second light-emitting unit 302 can be electrically connected to the third pad 2132. In addition, the second electrode 320 of the second light-emitting unit 302 can be electrically connected to the first pad 2122, and the first pad 2122 can be electrically connected to the contact C11 through the line 214. In some embodiments, the second electrodes 320 of two adjacent second light-emitting units 302 are each electrically connected to the first pad 2122 and can be connected to the contact C11 through the line 214 on the same layer, so as to achieve the technical means of integration or reduction of pads.

[0091] FIG. 7D for FIG. 7A A cross-sectional view of the light-emitting module along section line E-E'. For clarity and ease of explanation, the accompanying diagram is shown. FIG. 7D Several components are omitted from the diagram. Please refer to [link / reference]. FIG. 7A and FIG. 7D The second electrodes 320 of the first light-emitting unit 301, the second light-emitting unit 302, and the third light-emitting unit 303 are respectively connected to the first contact pads 2121, 2122, and 2123. The first contact pads 2121, 2122, and 2123 are electrically connected to the circuit 214 on the same layer and electrically connected to the upper contact pad of node C11. That is to say, the first light-emitting unit 301, the second light-emitting unit 302, and the third light-emitting unit 303 can be connected in series to the same node C11 to achieve integration or reduce the number of contact pads.

[0092] Please refer to FIG. 1B , FIG. 7B , FIG. 7C and FIG. 7D , FIG. 1B What is shown is similar FIG. 7B , FIG. 7C andFIG. 7D The circuit structure of the light emitting unit shown is made first. FIG. 1B The redistribution structure RDL of the first embodiment further comprises a third circuit layer CL3 disposed under the second circuit layer CL2. The fourth contact pads 2481, 2482, 2483 of the third circuit layer CL3 can be connected to the third contact pads 2131, 2132, 2133 of the first side 201 through the redistribution circuit layer RDL from the second side 202. The fourth contact pads 2481, 2482, 2483 are electrically connected to the contact pads PD1, PD2, PD3 of the driving substrate SUB. In addition, the first contact pads 2121, 2122, 2123 can be reconfigured and / or integrated and connected to the second contact pads 242 to be electrically connected to the contact pads CP of the driving substrate SUB. Under the above arrangement, the driving substrate SUB can provide driving signals to the light emitting unit 300 through the contact pads PD1, PD2, PD3, and provide common signals to the light emitting unit 300 through the contact pads CP. The circuit structure of the light emitting module can reduce the number of contact pads, reduce the risk of short circuit, improve the contact pad area, or reduce the difficulty of bonding with the driving substrate SUB, and the bonding quality of the light emitting module and the driving substrate SUB can be improved.

[0093] FIG. 8A A top view of a light emitting module according to another embodiment of the present disclosure. FIG. 8B A cross-sectional view of the light emitting module of FIG. 8A A cross-sectional view of the light emitting module of FIG. 8A And FIG. 8B Some elements are omitted. The circuit structure of the present embodiment is substantially similar to the circuit structure of FIG. 7A Therefore, the same and similar components in the two embodiments are not repeated here. FIG. 8A And FIG. 7A The main difference between the embodiment shown and the embodiment shown is that the second electrodes 320 of the first light emitting unit 301, the second light emitting unit 302, and the third light emitting unit 303 can be connected to the node C11 through the conductive pattern 214'. For example, the dielectric layer 110 can be provided with an opening VA1'. The circuit 214 is disposed on the surface of the dielectric layer 110 and extends into the opening VA1'. The part of the circuit 214 located in the opening VA1' can be defined as the conductive pattern 214'. The conductive pattern 214' can be disposed in the opening VA1' to connect to the first light emitting unit 301, the second light emitting unit 302, and the third light emitting unit 303. The conductive pattern 214' is connected to the node C11 through the circuit 214. Under the above arrangement, the up and down fluctuations of the circuit on the surface of the dielectric layer can be reduced, which can reduce the impedance. In addition, the circuit structure of the present embodiment can achieve substantially the same technical effects as the foregoing embodiments.

[0094] FIG. 9AFIG. 6 shows a top view of one of the circuit layers of the light emitting module according to another embodiment of the present disclosure. For the sake of clarity and convenience of explanation, FIG. 9A Some elements are omitted for the sake of clarity and convenience of explanation. Please refer to FIG. 9A The third circuit layer CL3 of the light emitting module 10A, for example, is an active array layer, which includes a dielectric layer 130A and a circuit layer.

[0095] For example, the circuit layer includes a plurality of scan lines SL and signal lines DL. The scan lines SL extend along the X-axis, and the signal lines DL extend along the Y-axis. The scan lines SL and the signal lines DL are arranged in an interlaced manner. A plurality of thin film transistors TFT are arranged in an array and electrically connected to the scan lines SL and the signal lines DL. The thin film transistors TFT, for example, include a semiconductor channel layer, a gate, and a source and a drain electrically connected to the semiconductor channel layer. The material of the semiconductor channel layer, for example, includes amorphous silicon, low temperature poly-silicon (LTPS), metal oxide, or a combination thereof, but the present disclosure is not limited thereto. In some embodiments, different thin film transistors TFT can have different semiconductor materials. In addition, the thin film transistors TFT can include top gate transistors, bottom gate transistors, dual gate transistors, and double gate transistors as needed, but are not limited thereto.

[0096] In the present embodiment, the gate of the thin film transistor TFT is electrically connected to one of the scan lines SL, and the source is electrically connected to one of the signal lines DL. The materials of the gate, the source, and the drain can be the same as the materials of the aforementioned contact pads or nodes, and will not be described in detail here.

[0097] The dielectric layer 130A can be disposed on the circuit layer and arrayed with a plurality of nodes 2381, 2382, 2383. Each of the nodes 2381, 2382, 2383 corresponds to a thin film transistor TFT, respectively. For example, the node 2381 can correspond to a drain of the thin film transistor TFT disposed between the scan line SL and the signal line DL and electrically connected to the thin film transistor TFT. In this way, the thin film transistor TFT can control the conduction of the node 2381. The plurality of nodes 2381, 2382, 2383 are connected to the corresponding light emitting units 300, respectively. As described above, the nodes 2381, 2382, 2383 can include the upper pads, the lower pads on the dielectric layer 130A, and the connecting portions penetrating the dielectric layer 130A and connecting the upper pads to the lower pads, respectively. The thin film transistor TFT can be connected to the upper pad of the node 2381, 2382, 2383. In this way, the thin film transistor TFT is electrically connected to one of the plurality of light emitting units 300, and the thin film transistor TFT can serve as a switch to control the light emitting unit 300.

[0098] In some embodiments, the circuit layer further includes a driving circuit 400. The driving circuit 400 is, for example, a gate driving circuit. The driving circuit 400 is electrically connected to the scan line SL to control the opening or closing of the gate of the thin film transistor TFT. The nodes 2381, 2382, 2383 are electrically connected to the signal line DL through the thin film transistor TFT. The signal line DL is connected to the via holes V1, V2, V3. As described above, the via holes V1, V2, V3 can include the upper pads, the lower pads on the dielectric layer 130A, and the connecting portions penetrating the dielectric layer 130A and connecting the upper pads to the lower pads, respectively. In addition, the transmission node TN3 can integrate the common voltage signal lines of the light emitting units 300, and then penetrate the dielectric layer 130A to be connected to the lower surface of the dielectric layer 130A or other circuit layers.

[0099] FIG. 9B A bottom view of a light emitting module according to another embodiment of the present disclosure is shown. For the sake of clarity and convenience of explanation, FIG. 9B Some elements are omitted. Please refer to FIG. 9B The lower surface 132 (i.e., the second side) of the dielectric layer 130A of the third circuit layer CL3 of the light emitting module 10A is provided with a plurality of pads. Please refer to FIG. 9A and FIG. 9BThe lower pads of the through holes V1, V2, V3 can be electrically connected to the fourth pads 2481, 2482, 2483, respectively. In another embodiment, the lower pads of the bottom surfaces of the through holes V1, V2, V3 can be used as the fourth pads 2481, 2482, 2483. The driving circuit 400 is electrically connected to the pads 420. The bottom surface of the transmission node TN3 penetrating the dielectric layer 130A is electrically connected to the second pad 242. The transmission node TN3 and the corresponding second pad 242 can have different shapes in the Z direction, but are not limited thereto. In the above arrangement, the light emitting module 10A can further reduce the number of pads, reduce the risk of short circuit, increase the pad area, or reduce the difficulty of bonding with the driving substrate SUB, and the bonding quality of the light emitting module 10A and the driving substrate SUB can be improved.

[0100] FIG. 10A A top view of a light emitting module according to another embodiment of the present disclosure. FIG. 10B A bottom view of a light emitting module according to another embodiment of the present disclosure. For the sake of clarity and convenience of description, FIG. 10A and FIG. 10B Some elements are omitted for clarity. Please refer to FIG. 10A and FIG. 10B , FIG. 10A Similar to FIG. 2A The first pads 2121, 2122, 2123 and the third pads 2131, 2132, 2133 are arranged in pairs on the upper surface 111 of the dielectric layer 110 (i.e., the first side of the circuit structure). FIG. 10B The fourth pads 2481', 2482', 2483' and the second pad 242' are shown on the lower surface 132 of the dielectric layer 130 (i.e., the second side of the circuit structure). In this embodiment, the dispersion between the fourth pads is greater than the dispersion between the third pads. The dispersion can be defined by the reciprocal of the standard deviation, as shown in Equation 1 below:

[0101]

[0102] where SD is the standard deviation, xi is the distance between adjacent pads, N is the number of adjacent pads and is a positive integer, and μ is the average of the adjacent pad distances (the sum of all adjacent pad distances divided by the number N). Thus, the reciprocal of the measured standard deviation SD can be used to define the dispersion between the pads. When the standard deviation SD is larger, the value of its reciprocal will be smaller, indicating that the distance between each adjacent pad deviates from the average and is arranged, resulting in poor dispersion. When the standard deviation SD is smaller, the value of its reciprocal will be larger, indicating that the distance between each adjacent pad tends to be arranged to the average, and the dispersion is better.

[0103] As FIG. 10AIn the illustrated embodiment, distance x1' is the distance between the third pad 2131 and the third pad 2133 in the Y direction. Distance x2' is the distance between the third pad 2131 and the first pad 2121 in the X direction. Distance x3' is the distance between the third pad 2131 and the third pad 2132 in the Y direction. Distance x4' is the distance between the third pad 2131 and the first pad 2121' in the X direction.

[0104] like FIG. 10B In the embodiment shown, the distances x1”, x2”, x3”, and x4” are the distances between the fourth pad 2481’ and the four adjacent fourth pads in different directions.

[0105] like FIG. 10A The distances x1', x2', x3', and x4' shown are inconsistent in magnitude, and each differs significantly from the average of the distances x1', x2', x3', and x4'. Compared to... FIG. 10A The distance between the pads shown is FIG. 10B The distances x1”, x2”, x3”, and x4” shown are similar, and their differences from the average values ​​of x1”, x2”, x3”, and x4” are small. Based on the above, the standard deviation SD’ of the distance between the third pad 2131 on the first side and other adjacent pads is greater than the standard deviation SD” of the distance between the fourth pad 2481’ on the second side and other adjacent pads. That is, the dispersion among the fourth pads 2481’ (i.e., the reciprocal of the standard deviation SD”) is better than the dispersion among the first pads 2121, 2122, 2123 or the third pads 2131, 2132, 2133 (i.e., the reciprocal of the standard deviation SD’). Therefore, the fourth pads 2481’, 2482’, and 2483’ are arranged in a more even manner. As a result, the circuit structure of the light-emitting module 10B can reduce the number of pads, reduce the risk of short circuits, increase the pad area, or reduce the difficulty of bonding with the driving substrate SUB. Furthermore, the distance between the fourth pads 2481', 2482', and 2483' can be increased. This improves the bonding quality between the light-emitting module 10B and the driving substrate SUB.

[0106] In summary, in the light emitting module and the light emitting device of the embodiment of the present disclosure, the pads on the second side of the circuit structure can be reconfigured or integrated by re-distributing the circuit layer, so that the number of pads on the second side of the circuit structure can be reduced, the risk of short circuit can be reduced, or the difficulty of bonding with the driving substrate can be reduced. The bonding quality of the light emitting module and the driving substrate can be improved. The light emitting device can have better bonding quality or display quality. In addition, since the dispersion between the fourth pads and the adjacent pads on the second side of the circuit structure can be less than the dispersion between the first pads or the third pads and the adjacent pads on the first side of the circuit structure, the distance between the pads on the second side can be evenly distributed, the risk of short circuit can be reduced, or the difficulty of bonding with the driving substrate can be reduced. In addition, the distance between the adjacent pads on the second side can also be increased. The bonding quality of the light emitting module and the driving substrate can be improved. The light emitting device can have better bonding quality or display quality.

[0107] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, and not to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: it can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement for part or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. An electronic device, characterized by comprising: The first circuit layer includes a first dielectric layer and a plurality of first circuits, wherein the plurality of first circuits are disposed on a surface of the first dielectric layer, and the plurality of first pads are electrically connected to one of the plurality of first circuits. The second circuit layer includes a second dielectric layer and a conductive via, wherein the conductive via penetrates the second dielectric layer and is electrically connected to the plurality of first pads through the one of the plurality of first circuits. In a cross-sectional view, the one of the plurality of first circuits includes a first portion and two second portions, the first portion is located between two adjacent ones of the plurality of first pads, the two second portions are respectively located on opposite sides of the first portion, and a length of one of the two second portions is less than a length of the first portion. The first circuit layer and the second circuit layer are disposed between the plurality of first pads and at least one second pad. The number of the plurality of first pads is greater than the number of the at least one second pad. An area of one of the at least one second pad is greater than an area of one of the plurality of first pads. 2.The electronic device of claim 1, wherein, The at least one second pad is electrically connected to the plurality of first pads through the first circuit layer and the second circuit layer. 3.The electronic device of claim 2, wherein, The substrate includes a signal line. 4.The electronic device of claim 2, wherein, The circuit structure includes: 5.The electronic device of claim 2, wherein, a plurality of first pads disposed on the first side; 6. An electronic device, comprising: at least one second pad disposed on the second side, wherein the plurality of first pads are electrically connected to the at least one second pad; and a redistribution circuit layer disposed between the plurality of first pads and the at least one second pad; a plurality of light emitting units electrically connected to the plurality of first pads; and a plurality of organic layers, wherein the plurality of organic layers overlap the plurality of light emitting units, and an upper surface of at least one of the plurality of organic layers has a curved surface. The circuit structure is electrically connected to the substrate through the at least one second pad. The number of the plurality of first pads is greater than the number of the at least one second pad. The substrate includes at least one third pad, and the at least one second pad is electrically connected to the at least one third pad. The at least one of the plurality of organic layers is a hemisphere having the curved surface. 7.The electronic device of claim 6, wherein, ​ 8.The electronic device of claim 6, wherein, ​ 9.The electronic device of claim 6, wherein, ​ 10.The electronic device of claim 6, wherein, ​

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