Method and apparatus for controlling slew rate of driver circuitry

Abstract

The invention relates to a method and apparatus to control a slew rate of driver circuitry. An example apparatus includes current source circuitry (220, 630) having a first terminal and a second terminal; a current sink circuitry (260, 685) having a first terminal and a second terminal; a first transistor (210, 615) having a first terminal, a second terminal and a control terminal, the first terminal of the first transistor coupled to the first terminal of the current source circuitry; a second transistor (250, 670) having a first terminal, a second terminal and a control terminal, the first terminal of the second transistor coupled to the first terminal of the current sink circuitry; and a capacitor (240, 640, 645) having a first terminal and a second terminal, the first terminal of the capacitor coupled to the second terminal of the first transistor and the second terminal of the second transistor, the second terminal of the capacitor coupled to the second terminal of the current source circuitry and the second terminal of the current sink circuitry.

Description

[0001] Cross-references to related applications

[0002] This patent application claims the benefit and priority of U.S. Provisional Patent Application No. 63 / 645,263, filed May 10, 2024, which is incorporated herein by reference in its entirety. Technical Field

[0003] This specification generally relates to driver circuit systems, and more specifically, to methods and apparatus for controlling the rotational speed of driver circuit systems. Background Technology

[0004] With advancements in electronic technology, systems are continuously operating at higher power and speeds. In driver circuit systems, increasingly complex circuitry implements advanced technologies for driving increasingly complex loads. Despite the complex operating conditions, this circuitry allows for precise configuration of the digital output. Summary of the Invention

[0005] For a method and apparatus for controlling the rotational speed of a driver circuit system, one example apparatus includes: a current source circuit system having a first terminal and a second terminal; a current absorber circuit system having a first terminal and a second terminal; a first transistor having a first terminal, a second terminal, and a control terminal, the first terminal of the first transistor being coupled to the first terminal of the current source circuit system; a second transistor having a first terminal, a second terminal, and a control terminal, the first terminal of the second transistor being coupled to the first terminal of the current absorber circuit system; and a capacitor having a first terminal and a second terminal, the first terminal of the capacitor being coupled to the second terminal of the first transistor and the second terminal of the second transistor, the second terminal of the capacitor being coupled to the second terminal of the current source circuit system, the second terminal of the current absorber circuit system, the control terminal of the first transistor, and the control terminal of the second transistor. Other examples are described.

[0006] For a method and apparatus for controlling the rotational speed of a driver circuit system, one example apparatus includes: a first transistor having a first terminal and a control terminal; a second transistor having a first terminal, a second terminal, and a control terminal, the first terminal of the second transistor being coupled to the first terminal of the first transistor and the control terminal of the first transistor; a first capacitor having a first terminal and a second terminal; a second capacitor having a first terminal and a second terminal; a third transistor having a first terminal, a second terminal, and a control terminal, the first terminal of the third transistor being coupled to the second terminal of the second transistor, the first terminal of the first capacitor, the first terminal of the second capacitor, and the control terminal of the third transistor; a fourth transistor having a first terminal and a control terminal, the first terminal of the fourth transistor being coupled to the second terminal of the third transistor; a fifth transistor having a first terminal and a second terminal; and a sixth transistor having a first terminal and a second terminal, the first terminal of the sixth transistor being coupled to the control terminal of the second transistor, the second terminal of the first capacitor, and the first terminal of the fifth transistor, the second terminal of the sixth transistor being coupled to the second terminal of the second capacitor, the control terminal of the fourth transistor, and the second terminal of the fifth transistor. Other examples are described.

[0007] For a method and apparatus for controlling the rotational speed of a driver circuit system, one example apparatus includes: a first transistor having a first terminal and a control terminal; a second transistor having a first terminal and a control terminal; a first capacitor having a first terminal and a second terminal; a second capacitor having a first terminal and a second terminal, the first terminal of the second capacitor coupled to the first terminal of the first transistor, the first terminal of the second transistor, and the first terminal of the first capacitor; a first current source circuit system having terminals; a second current source circuit system having terminals; a third transistor having a first terminal and a second terminal; and a fourth transistor having a first terminal and a second terminal, the first terminal of the fourth transistor coupled to the control terminal of the first transistor, the second terminal of the first capacitor, the terminal of the first current source circuit system, and the first terminal of the third transistor, the second terminal of the fourth transistor coupled to the control terminal of the second transistor, the second terminal of the second capacitor, the terminal of the second current source circuit system, and the second terminal of the third transistor. Other examples are described. Attached Figure Description

[0008] Figure 1This is a block diagram of an instance communication system that includes an instance constant slew rate driver circuit system.

[0009] Figure 2 for Figure 1 A schematic diagram of an example of a constant rotational speed driver circuit system.

[0010] Figure 3 To indicate that it can be used Figure 1 and 2 A flowchart of an instance implementation of a constant rotational speed drive circuit system, including, executing, instantiating, or performing at least one instance of machine-readable instructions or instance operations.

[0011] Figure 4 for Figure 1 and 2 A timing diagram of rising edge operation for an example of a constant gyroscope driver circuit system.

[0012] Figure 5 for Figure 1 and 2 A timing diagram of a falling edge operation for an example of a constant slew rate driver circuit system.

[0013] Figure 6 For example, a high-side and low-side high-voltage protection circuit system. Figure 1 A schematic diagram of another example of a constant rotational speed driver circuit system.

[0014] Figure 7 for Figure 6 A schematic diagram of an example of a high-side voltage protection circuit system.

[0015] Figure 8 To indicate that it can be used Figure 6 and 7 A flowchart of at least one instance of machine-readable instructions or instance operations for the implementation, instantiation, or ongoing execution of a high-side voltage protection circuit system.

[0016] Figure 9A and 9B form Figure 6 A schematic diagram of an example of a low-side voltage protection circuit system.

[0017] Figure 10 To indicate that it can be used Figure 6 , 9A A flowchart of at least one of the instance machine-readable instructions or instance operations of the low-side voltage protection circuit system of 9B, which is being implemented, instantiated, or in progress.

[0018] Figure 11 for Figure 1 and 6Timing diagrams for an example operation of a constant slew rate driver circuit system, including Figure 6 , 7 Example operation of high-side and low-side voltage protection circuit systems of 9A and 9B.

[0019] Figure 12 for Figure 1 and 6 Another timing diagram of an example operation of a constant slew rate driver circuit system, including Figure 6 , 7 Example operation of high-side and low-side voltage protection circuit systems of 9A and 9B.

[0020] The drawings are not necessarily drawn to scale. Generally, the same reference numerals in the drawings and this specification refer to the same or similar features and / or parts (functionally and / or structurally). Although the drawings show areas with clearly defined lines and boundaries, some or all of these lines and boundaries may be idealized. In reality, boundaries or lines may be invisible, mixed, or irregular. Detailed Implementation

[0021] With the continuous advancement of electronic technology, systems have become capable of operating safely under increasingly complex conditions, such as higher power and higher speed. In driver circuit systems, increasingly sophisticated circuitry implements advanced technologies for driving communication with increasingly complex loads. Despite the complexity of operating conditions, this circuitry allows for precise configuration of the digital output.

[0022] As electronic technology continues to advance, communication protocols continue to support increasing data rates. In communication systems, the maximum data rate is set based on the speed at which the voltage at the output terminals can be adjusted by the driver circuitry. To support these increasing data rates, communication systems incorporate increasingly sophisticated driver circuitry to enable higher transmission speeds.

[0023] In some designs, the driver circuitry includes a pre-driver stage circuitry that controls the p-channel high-side transistor and the n-channel low-side transistor. The high-side transistor pulls the output terminal of the driver circuitry towards the supply voltage to set the output voltage to a logic high state (e.g., logic one). The low-side transistor pulls the output terminal of the driver circuitry towards a common potential (e.g., ground) to set the output voltage to a logic low state (e.g., logic zero). The pre-driver stage circuitry includes logic devices and inverters to sequentially turn on the high-side and low-side transistors. In operation, the pre-driver stage circuitry receives digital input signals from a data source. The pre-driver stage circuitry includes a pair of cross-coupled logic devices that prevent the high-side and low-side transistors from being turned on simultaneously (e.g., conducting current, enabling, etc.).

[0024] For rising edge transitions of digital input signals, the pre-driver stage circuitry turns off the low-side transistor before turning on the high-side transistor. For falling edge transitions of digital input signals, the pre-driver stage circuitry turns off the high-side transistor before turning off the low-side transistor. However, the rate at which the output voltage transitions from the first logic state to the second logic state (also known as the slew rate) depends on the capacitance of the load coupled to the output terminals of the driver circuitry. In some designs, the loaded capacitance may be unknown or vary with the operation of the communication system. In such designs, the slew rate variation of the driver circuitry's output voltage may also be unknown. Some designs limit the maximum transmit speed to account for variations in the slew rate at the output terminals.

[0025] Furthermore, to ensure safe operation in relatively high-voltage systems, some driver circuitry includes circuitry to protect components from exposure to adverse voltages (e.g., harmful, unsafe, dangerous, etc.). If left untreated, these adverse voltages can damage other components of the communication system, such as the power supply or data source. In automotive applications, even if the driver circuitry only supports 5-volt communication, it may be exposed to (e.g., short-circuited to) 20 volts at the output terminals. Such adverse voltages can damage the voltage source supplying the high-side transistors or reverse-bias the common terminal supplying the common potential to the low-side transistors.

[0026] Some driver circuitry designs use drain-extended transistors (DETs) for both high-side and low-side transistors. DETs allow the voltage at the drain terminal to be pulled up to a level generally greater than the voltage at the source terminal. However, implementing a drain-extended transistor in a die creates a body diode. When forward biased, current flowing through the body diode can expose driver circuitry and communication systems to unwanted voltages.

[0027] The examples described herein include methods and apparatus for controlling the slew rate of a driver circuit system using a constant slew rate driver circuit system. In some described examples, the constant slew rate driver circuit system includes a high-side transistor, a low-side transistor, a capacitor, a current source circuit system, and a current sink circuit system. The high-side transistor and the low-side transistor drive an output voltage at the output terminal of the constant slew rate driver circuit system. The current source circuit system pulls up (e.g., toward a supply voltage) the control terminals of the high-side transistor and the low-side transistor in response to a logic low state of a digital input to generate a falling edge at the output terminal. During operation of such examples, the current source circuit system supplies current to the control terminals of the high-side transistor and the low-side transistor, as well as to the capacitor. The current sink circuit system pulls down (e.g., toward a common potential) the control terminals of the high-side transistor and the low-side transistor in response to a logic high state of a digital input to generate a rising edge at the output terminal. During operation of such examples, the current sink circuit system draws current from the control terminals of the high-side transistor and the low-side transistor, as well as from the capacitor. The capacitor couples the control terminals of the high-side transistor and the low-side transistor to the output terminal of the constant slew rate driver circuit system. Advantageously, using a current source circuit system, a current sink circuit system, and capacitors to drive the high-side transistors and low-side transistors generates a shoot-through current, which sets the output voltage independently of the loaded capacitor.

[0028] In some described examples, the constant slew rate driver circuit system further includes a second high-side transistor, a second low-side transistor, a high-side voltage protection circuit system, and a low-side voltage protection circuit system. In such described examples, the voltage protection circuit system generates a voltage protection signal in response to the detection of an adverse voltage. The voltage protection signal controls the second high-side transistor and the second low-side transistor and protects the driver circuit system from exposing other components of the communication system to adverse voltages. In some example operations, the voltage protection signal disconnects the control terminals of the first high-side transistor and the first low-side transistor. In such example operations, the voltage protection signal further enables an additional transistor to disable the first high-side transistor and the first low-side transistor by reducing the gate-source voltage. Furthermore, the voltage protection signal disables the second high-side transistor and the second low-side transistor to prevent the body diodes of the first high-side transistor and the first low-side transistor from being forward biased. Advantageously, the second high-side transistor, the second low-side transistor, and the voltage protection circuit system protect the driver circuit system from adverse voltages.

[0029] Figure 1 This is a block diagram of the instance communication system 100. Figure 1 In one example, the communication system 100 includes a device 110 and a load 120. Figure 1The instance device 110 includes an instance digital core 130, an instance constant slew rate driver circuit system 140, and an instance input buffer circuit system 150 (IN_BUFF). Figure 1 In such examples, communication system 100 implements digital communication protocols, such as single-edge nibble transmission (SENT), pulse width modulation (PWM), SWIFT, etc. In these examples, both device 110 and load 120 are configured to receive and transmit data using digital communication protocols.

[0030] Device 110 has terminals coupled to load 120. In some instances, the terminals of device 110 are bidirectional communication terminals, allowing device 110 to communicate with load 120. Load 120 has terminals coupled to device 110. Figure 1 In one example, the terminals of load 120 are bidirectional communication terminals, which allow load 120 to communicate with device 110. In some examples, device 110 is coupled to load 120 via one or more additional connections. In such examples, one or more additional connections allow device 110 and load 120 to communicate using a unidirectional communication channel or by utilizing multiple bidirectional communication channels.

[0031] Digital core 130 has a first terminal and a second terminal. The first terminal of digital core 130 is coupled to a constant slew rate driver circuit system 140. In some instances, the first terminal of digital core 130 is referred to as a transmit output (TX). The second terminal of digital core 130 is coupled to a buffer circuit system 150. In some instances, the second terminal of digital core 130 is referred to as a receive input (RX). Figure 1 In one instance, the digital core 130 is configured as a programmable circuit system that uses a constant slew rate driver circuit system 140 to interface with the load 120.

[0032] The constant slew rate driver circuit system 140 has a first terminal and a second terminal. The first terminal of the constant slew rate driver circuit system 140 is coupled to the digital core 130. The second terminal of the constant slew rate driver circuit system 140 is coupled to the load 120 and the buffer circuit system 150. (The following is in conjunction with...) Figure 2 , 6 Examples of constant rotational speed driver circuit system 140 are illustrated and described in sections 7, 9A, and 9B.

[0033] The buffer circuit system 150 has a first terminal and a second terminal. The first terminal of the buffer circuit system 150 is coupled to the load 120 and the constant rotation speed driver circuit system 140. The second terminal of the buffer circuit system 150 is coupled to the digital core 130. In some embodiments, the constant rotation speed driver circuit system 140 or the buffer circuit system 150 may be included in the digital core 130.

[0034] In a practical operation, the digital core 130 supplies digital signals to the constant slew rate driver circuitry 140. The digital core 130 generates digital signals having logic states (e.g., logic high or logic low) corresponding to data to be transmitted to the load 120. The constant slew rate driver circuitry 140 generates an output voltage having logic states that match the logic states of the digital signals. (See below for further details.) Figure 3 , 8 As further described in section 10, the constant slew rate driver circuitry 140 is configured to generate rising and falling edges of a slew rate with capacitance independent of the load 120. The load 120 receives data from the device 110 in response to sampling the output voltage of the constant slew rate driver circuitry 140. Advantageously, the constant slew rate driver circuitry 140 allows the device 110 to support lower timing margins and higher speed communication. (The following is in conjunction with...) Figure 3 , 8 Sections 1 and 10 illustrate and describe further examples of the operation of the constant gyration rate driver circuit system 140.

[0035] Figure 2 This is a schematic diagram of an example constant rotational speed driver circuit system 200, which is... Figure 1 An example of a constant rotational speed drive circuit system 140. In Figure 2 In one example, the constant slew rate driver circuit system 200 includes a first transistor 210, a first current source circuit system 220, an inverter 230, a capacitor 240, a second transistor 250, and a second current source circuit system 260.

[0036] The constant slew rate driver circuit system 200 has input terminals, output terminals, a first power supply terminal, and a second power supply terminal. The input terminals of the constant slew rate driver circuit system 200 are configured to be coupled to an external circuit system (e.g., Figure 1 The digital core 130), the external circuit system supplies digital input signals (D... IN The output terminals of the constant slew rate driver circuit system 200 are configured to couple to... Figure 1The load 120 is illustratively represented by resistor 270 and capacitor 280. The first power supply terminal of the constant slew rate driver circuit system 200 is configured to be coupled to a power supply that supplies a power supply voltage (V). CC The second power supply terminal of the constant slew rate driver circuit system 200 is configured to be coupled to a common terminal that supplies a common potential (e.g., ground, AVSS, etc.). The following is in conjunction with... Figure 6 , 7 9A and 9B illustrate and describe another example of a constant gyratory speed drive circuit system 200. The following section combines... Figure 3 This section describes and illustrates an example of the operation of a constant gyratory speed drive circuit system 200.

[0037] Transistor 210 (also referred to as a high-side transistor) has a first terminal, a second terminal, a third terminal, and a control terminal. Furthermore, transistor 210 has a body diode 210A, which is an illustrative example of a diode formed by implementing transistor 210 in a die. The first and second terminals of transistor 210 are coupled to a first power input of a constant slew rate driver circuit system 200, which supplies a power supply voltage. The third terminal of transistor 210 is coupled to capacitors 240 and 280, transistor 250, and resistor 270. The control terminal of transistor 210 is coupled to current source circuit systems 220 and 260, capacitor 240, and transistor 250. Diode 210A couples the first and second terminals of transistor 210 to the third terminal of transistor 210.

[0038] The current source circuit system 220 has a first terminal, a second terminal, and a control terminal. The first terminal of the current source circuit system 220 is coupled to a first power supply terminal of a constant slew rate driver circuit system 200, which supplies a power supply voltage. The second terminal of the current source circuit system 220 is coupled to transistors 210 and 250, capacitor 240, and current source circuit system 260. The control terminal of the current source circuit system 220 is coupled to an inverter 230. In some instances, the current source circuit system 220 has one or more additional inputs configured to receive a trim bit (shown by a dashed arrow). In such instances, the trim bit sets the magnitude of the current supplied by the current source circuit system 220.

[0039] Inverter 230 has a first terminal and a second terminal. The first terminal of inverter 230 is coupled to the input terminal of constant slew rate driver circuit system 200, which supplies digital input signals. The second terminal of inverter 230 is coupled to current source circuit system 220.

[0040] Capacitor 240 has a first terminal and a second terminal. The first terminal of capacitor 240 is coupled to transistors 210 and 250, resistor 270, and capacitor 280, which form the output terminal of constant slew rate driver circuit system 200. The second terminal of capacitor 240 is coupled to transistors 210 and 250 and current source circuit systems 220 and 260.

[0041] Transistor 250 (also referred to as a low-side transistor) has a first terminal, a second terminal, a third terminal, and a control terminal. Furthermore, transistor 250 has a body diode 250A, which is an illustrative example of a diode formed by implementing transistor 250 in a die. The first terminal of transistor 250 is coupled to transistor 210, capacitors 240 and 280, and resistor 270. The second and third terminals of transistor 250 are coupled to a second power input of a constant slew rate driver circuit system 200, which supplies a common potential. The control terminal of transistor 250 is coupled to transistor 210, current source circuit systems 220 and 260, and capacitor 240. Diode 250A couples the first terminal of transistor 250 to the second and third terminals of transistor 250.

[0042] The current source circuit system 260 (also referred to as a current absorber circuit system) has a first terminal, a second terminal, and a control terminal. The first terminal of the current source circuit system 260 is coupled to transistors 210 and 250, current source circuit system 220, and capacitor 240. The second terminal of the current source circuit system 260 is coupled to a second power supply terminal of a constant gyration rate driver circuit system 200, which supplies a common potential. The control terminal of the current source circuit system 260 is coupled to an input terminal of the constant gyration rate driver circuit system 200, which supplies a digital input signal. In some instances, the current source circuit system 260 has one or more additional inputs configured to receive a trimming bit. In such instances, the trimming bit sets the magnitude of the current absorbed by the current source circuit system 260.

[0043] exist Figure 2In this example, transistor 250 is an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET). Alternatively, transistor 250 may be an n-channel field-effect transistor (FET), an n-channel insulated-gate bipolar transistor (IGBT), an n-channel junction field-effect transistor (JFET), an NPN bipolar junction transistor (BJT), or a slightly modified p-type equivalent. Figure 2 In this example, transistor 210 is a p-channel MOSFET. Alternatively, transistor 210 may be a p-channel FET, p-channel IGBT, p-channel JFET, PNP BJT, or a slightly modified n-type equivalent device. Transistors 210 and 250 may be depletion-mode devices, drain-extended devices, enhancement-mode devices, natural transistors, or other types of device structure transistors. Furthermore, transistors 210 and 250 may be implemented on / above a silicon substrate (Si), a silicon carbide substrate (SiC), a gallium nitride substrate (GaN), or a gallium arsenide substrate (GaAs).

[0044] Figure 3 To indicate that it can be used Figure 1 and 2 A flowchart of an instance implementation of at least one of the constant rotational speed drive circuit systems 140 and 200, including execution, instantiation, or ongoing instance operation 300. Figure 3 Instance operation 300 begins at box 305. At box 305... Figure 2 Inverter 230 and Figure 2 The current source circuit system 260 receives digital input (box 305). In example operation, the constant slewing rate driver circuit systems 140 and 200 can receive both digital input signals and inverted digital input signals. In such an example, the current source circuit system 260 receives the digital input signal, and the current source circuit system 220 receives the inverted digital input signal.

[0045] The current source circuit system 260 determines whether a rising edge exists at the digital input (box 310). In practical operation, the current source circuit system 260 responds to the digital input signal being in a logic high state by... Figure 2Transistors 210 and 250 and capacitor 240 sink current. In other instances of operation, the current source circuit system 260 is inactive (e.g., does not supply or sink current) in response to a digital signal being in a logic low state. The current source circuit system 260 is turned on in response to a rising edge of a digital input signal. In some instances, the current source circuit system 260 may be described or referred to as a current sink circuit system.

[0046] If current source circuitry 260 determines that a rising edge exists at the digital input (e.g., block 310 returns a result), then current source circuitry 260 draws current from the control terminal (block 315). In a typical operation, current source circuitry 260 draws current from transistors 210, 250, and capacitor 240 in response to a logic high digital input signal. In this type of operation, current source circuitry 220 no longer supplies (e.g., disconnects) current to transistors 210, 250, and capacitor 240 in response to a logic low inverted digital input signal.

[0047] Current source circuit system 260 turns on the high-side transistor (box 320). In example operation, current source circuit system 260 pulls the control terminals of transistors 210 and 250 to a common potential. In this type of example operation, current source circuit system 260 turns on transistor 210 in response to generating a gate-source voltage greater than a threshold voltage.

[0048] The current source circuit system 260 uses a low-side transistor to generate a shoot-through current (Box 325). In example operation, when the current source circuit system 260 pulls the voltage of the control terminals to a common potential, transistors 210 and 250 at least partially conduct current. For example, transistors 210 and 250 conduct current in response to the absolute value of the gate-source voltage of transistor 210 being greater than the threshold voltage of transistor 210 and the gate-source voltage of transistor 250 being greater than the threshold voltage of transistor 250. The rate of change of the output voltage (dV) during the time that both transistors 210 and 250 are on is... OUT ) is roughly equal to the transconductance (g) of transistor 210 mp ) and the transconductance (g) of transistor 250 mn The rate of change of the output voltage of the constant gyration rate driver circuit system 200 during the shoot-through period is determined by multiplying the equivalent resistance (R) at the output terminal of the constant gyration rate driver circuit system 200 by the small-signal change (dV1) at the control terminal. The following equation (1) can be used to determine the rate of change of the output voltage of the constant gyration rate driver circuit system 200 during the shoot-through period.

[0049] dV OUT =-(g mn +g mp Equation (1) is given by RdV1.

[0050] Furthermore, since the current source circuit system 260 draws current from the output terminal of the constant rotation speed driver circuit system 200 through the capacitor 240, the control current (I) CNTRL The control current is proportional to the charging of capacitor 240. The control current is the current absorbed by the current source circuit system 260. The control current is calculated by multiplying the capacitance (2C) of capacitor 240 by the rate of change of voltage at the control terminal (dV). 1 / The rate of change of voltage at the output terminal of the constant rotational speed driver circuit system 200 (dV) with respect to dt) OUT / The difference between dt and (also called the slew rate) is proportional. Using the rate of change determined from equation (1) above and the total transconductance (g) of transistors 210 and 250... m The control current can be determined in equation (2) below. Advantageously, when the transconductance multiplied by the equivalent resistance of resistor 270 is greater than one, the slew rate of the constant slew rate driver circuit systems 140, 200 is approximately equal to the current absorbed by the current source circuit system 260 and the capacitance of capacitor 240. Advantageously, the slew rate of the output voltage of the constant slew rate driver circuit systems 140, 200 is independent of the capacitance of load 120 (e.g., the capacitance of capacitor 280) during shoot-through.

[0051]

[0052] To ensure the total transconductance (g) of transistors 210 and 250 m If the transconductance is greater than one, transistors 210 and 250 are configured to have a transconductance that satisfies this requirement. Equations (3) and (4) below can be used to determine the transconductance (g) of transistor 210. mp Furthermore, equations (5) and (6) below can be used to determine the transconductance (g) of transistor 250. mn The following equation (7) can be used to determine the total transconductance of transistors 210 and 250. However, if transistors 210 and 250 are set to be approximately equal in size, and the sum of the voltages applied to transistors 210 and 250 is equal to the supply voltage (V) at the first power input of the constant rotation speed driver circuit system 140 and 200. CC Then, equation (8) below can be used to determine the transconductance of transistors 210 and 250. Advantageously, the transconductance of transistors 210 and 250 is constant and independent of the capacitance of load 120 (e.g., capacitor 280). Advantageously, in response to driving the control terminals of transistors 210 and 250 as dominant terminals, the rotational speed at the output terminals of the constant rotational speed driver circuit system 140 and 200 is independent of the capacitance of load 120.

[0053]

[0054]

[0055] Transistors 210 and 250 charge the load using the difference between the current through-pass and the current of the high-side transistor (box 330). In an example operation, when transistors 210 and 250 generate a current through-pass, the difference between the currents of transistors 210 and 250 being forward-conducted is supplied to capacitor 280, which represents... Figure 1 The load is a capacitor of 120. In this type of operation, the excess current further reduces the effect of capacitor 280 on the timing of the rising edge.

[0056] Current source circuit system 260 disconnects the low-side transistor (box 335). In this example operation, current source circuit system 260 pulls down the control terminal of transistor 250. In this type of example operation, current source circuit system 260 disconnects transistor 250.

[0057] If the current source circuit system 260 determines that there is no rising edge at the digital input (e.g., box 310 returns a negative result), then Figure 2 The current source circuitry 220 and inverter 230 determine whether a falling edge is present at the digital input (box 340). In one example operation, the current source circuitry 220 supplies current to transistors 210 and 250 and capacitor 240 in response to the inverted digital input signal being at logic high. In other examples, the current source circuitry 220 is inactive (e.g., no current is supplied) in response to the inverted digital signal being at logic low. The current source circuitry 220 is turned on in response to a falling edge of the digital input signal. If the current source circuitry 220 and inverter 230 determine that no falling edge is present at the digital input (e.g., box 340 returns a negative result), control continues to return to box 305.

[0058] If current source circuitry 220 and inverter 230 determine that a falling edge exists at the digital input (e.g., block 340 returns a result), then current source circuitry 220 supplies current to the control terminal (block 345). In example operation, current source circuitry 220 begins supplying current to transistors 210, 250, and capacitor 240 in response to the inverted digital input signal being logic high. In this type of example operation, current source circuitry 260 no longer draws current from transistors 210, 250, and capacitor 240 in response to the digital input signal being logic low.

[0059] Current source circuit system 260 turns on the low-side transistor (box 350). In example operation, current source circuit system 220 pulls the control terminals of transistors 210 and 250 to the supply voltage. In this type of example operation, current source circuit system 220 turns on transistor 250 in response to generating a gate-source voltage greater than a threshold voltage.

[0060] Current source circuit system 260 uses a high-side transistor to generate a shoot-through current (box 355). In example operation, when current source circuit system 220 pulls the voltage at the control terminal to the supply voltage, both transistors 210 and 250 at least partially conduct current. Similar to the example operation in box 325, transistors 210 and 250 are configured to generate a shoot-through current. Advantageously, in response to the control terminals of transistors 210 and 250 being the dominant terminals, the falling edge output voltage has a slew rate independent of capacitor 280.

[0061] Transistors 210 and 250 discharge the load using the difference between the shoot-through current and the current of the low-side transistor (box 360). In an example operation, when transistors 210 and 250 generate shoot-through current, the difference between the currents of transistors 210 and 250 is absorbed by capacitor 280, which represents the capacitance of load 120. In this type of example operation, excess current further reduces the effect of capacitor 280 on the timing of the rising edge.

[0062] Current source circuit system 220 disconnects the high-side transistor (box 365). In example operation, current source circuit system 220 pulls up the control terminal of transistor 210. In this type of example operation, current source circuit system 220 disconnects transistor 210.

[0063] Although reference Figure 3 The flowcharts described herein are example methods, but implementations may also be used in this specification. Figure 1 and 2 Many other methods exist for the constant rotational speed drive circuit systems 140, 200. For example, the execution order of the blocks can be changed, or some of the blocks described can be altered, eliminated, or combined. Similarly, in the manufacturing process, additional operations can be included before, between, or after the blocks shown in the illustrated examples.

[0064] Figure 4 for Figure 1 and 2 The rising edge operation timing diagram 400 is an example of a constant rotational speed driver circuit system 140, 200. Figure 4 In the example, timing diagram 400 includes a first rotational speed 405, a second rotational speed 410, a third rotational speed 415, a fourth rotational speed 420, a fifth rotational speed 425, a first current 430, and a second current 435. Rotational speeds 405, 410, 415, 420, and 425 represent different rotational speeds at the output terminals of the constant rotational speed driver circuit systems 140 and 200. In some examples, the rotational speed of the constant rotational speed driver circuit systems 140 and 200 is determined by… Figure 2The magnitude of the current absorbed by the current source circuit system 260 is set. In such an example, the current source circuit system 260 can be modified to implement one of the rotation speeds 405, 410, 415, 420, and 425 using the trim bit input of the current source circuit system 260.

[0065] Each of the slew rates 405, 410, 415, 420, and 425 includes a first slew rate 405A, 410A, 415A, 420A, and 425A for the first output capacitor and a second slew rate 405B, 410B, 415B, 420B, and 425B for the second output capacitor. The first slew rates 405A, 410A, 415A, 420A, and 425A represent the slew rates 405, 410, 415, 420, and 425 of the output voltage of the constant slew rate driver circuit system 140 and 200 when capacitor 280 has the first capacitance. The second slew rates 405B, 410B, 415B, 420B, and 425B represent the slew rates 405, 410, 415, 420, and 425 of the output voltage of the constant slew rate driver circuit system 140 and 200 when capacitor 280 has a second capacitance greater than the first capacitance. Advantageously, although changed Figure 1 Load 120 or Figure 2 The output capacitance of the capacitor is 280, but the rotation speeds of 405A, 410A, 415A, 420A, and 425A are approximately equal to the rotation speeds of 405B, 410B, 415B, 420B, and 425B.

[0066] Furthermore, current 430 represents the current flowing through transistor 210 for spin rate 425 during the rising edge of timing diagram 400. Current 435 represents the current flowing through transistor 250 for spin rate 425 during the rising edge of timing diagram 400. Figure 4 In this example, the difference between currents 430 and 435 indicates that excessive current is supplied to the capacitor at the output terminals of the constant speed drive circuit systems 140 and 200. Each of currents 430 and 435 includes a first current 430A, 435A for the first output capacitor and a second current 430B, 435B for the second output capacitor. Advantageously, although the output capacitors of the constant speed drive circuit systems 140 and 200 vary, currents 430A, 430B and currents 435A, 435B remain approximately equal.

[0067] Figure 5 for Figure 1 and 2 The falling-edge timing diagram 500 illustrates an example of a constant rotational speed driver circuit system 140, 200, with operation based on the constant rotational speed. Figure 5In one example, timing diagram 500 includes a first rotational speed 505, a second rotational speed 510, a third rotational speed 515, a fourth rotational speed 520, a fifth rotational speed 525, a first current 530, and a second current 535. Rotational speeds 505, 510, 515, 520, and 525 represent different rotational speeds at the output terminals of constant rotational speed driver circuit systems 140 and 200. In some examples, the rotational speed of constant rotational speed driver circuit systems 140 and 200 is determined by… Figure 2 The magnitude of the current supplied by the current source circuit system 220 is set. In such an example, the current source circuit system 220 can be modified to select one of the slewing rates 505, 510, 515, 520, and 525 using the trim bit input of the current source circuit system 220.

[0068] Each of the slew rates 505, 510, 515, 520, and 525 includes a first slew rate 505A, 510A, 515A, 520A, and 525A under the first output capacitor and a second slew rate 505B, 510B, 515B, 520B, and 525B under the second output capacitor. The first slew rates 505A, 510A, 515A, 520A, and 525A represent the slew rates 505, 510, 515, 520, and 525 of the output voltage of the constant slew rate driver circuit system 140 and 200 when capacitor 280 has the first capacitance. The second slew rates 505B, 510B, 515B, 520B, and 525B represent the slew rates 505, 510, 515, 520, and 525 of the output voltage of the constant slew rate driver circuit system 140 and 200 when capacitor 280 has a second capacitance greater than the first capacitance. Advantageously, although changed Figure 1 Load 120 or Figure 2 The output capacitance of the capacitor is 280, but the rotation speeds of 505A, 510A, 515A, 520A, and 525A are approximately equal to the rotation speeds of 505B, 510B, 515B, 520B, and 525B.

[0069] Furthermore, current 530 indicates the current flowing through transistor 210 for rotational speed 525 during the rising edge of timing diagram 500. Current 535 indicates the current flowing through transistor 250 for rotational speed 525 during the rising edge of timing diagram 500. Figure 5In this example, the difference between currents 530 and 535 indicates that excessive current is supplied to the capacitor at the output terminals of the constant speed drive circuit systems 140 and 200. Each of currents 530 and 535 includes a first current 530A, 535A for the first output capacitor and a second current 530B, 535B for the second output capacitor. Advantageously, although the output capacitors of the constant speed drive circuit systems 140 and 200 vary, currents 530A, 530B and currents 535A, 535B remain approximately equal.

[0070] Figure 6 Is as Figure 1 and 2 A schematic diagram of another example of a constant slewing rate drive circuit system 140, 200, and an example of a constant slewing rate drive circuit system 600. Figure 6 In one example, the constant slew rate driver circuit system 600 includes a first transistor 605, a high-side voltage protection circuit system 610, a second transistor 615, a first diode 620, a third transistor 625, a first current source circuit system 630, an inverter 635, a first capacitor 640, a second capacitor 645, a fourth transistor 650, a fifth transistor 655, a sixth transistor 660, a low-side voltage protection circuit system 665, a seventh transistor 670, a second diode 675, an eighth transistor 680, and a second current source circuit system 685.

[0071] The constant slew rate driver circuit system 600 has input terminals, output terminals, a first power supply terminal, and a second power supply terminal. The input terminals of the constant slew rate driver circuit system 600 are configured to be coupled to an external circuit system (e.g., Figure 1 The digital core 130), the external circuit system supplies digital input signals (D... IN The output terminals of the constant slew rate driver circuit system 600 are configured to couple to... Figure 1 The load is 120. Figure 6 In this example, load 120 is illustratively represented by resistor 690 and capacitor 695. Figure 6 In this example, the constant slew rate driver circuit system 600 supplies an output voltage (V) at the output terminal. OUT The first power supply terminal of the constant slew rate driver circuit system 600 is configured to be coupled to a power supply that supplies a power supply voltage (V). CC The second power supply terminal of the constant slew rate driver circuit system 600 is configured to be coupled to a common terminal that supplies a common potential (e.g., ground, AVSS, etc.). Figure 2 , 79A and 9B illustrate and describe other examples of the constant gyration rate driver circuit system 600. (In conjunction with...) Figure 3 , 8 Sections 1 and 10 illustrate and describe an example operation of the constant gyratory speed drive circuit system 600.

[0072] Transistor 605 (also referred to as a high-side transistor) has a first terminal, a second terminal, a third terminal, and a control terminal. Furthermore, transistor 605 has a body diode 605A, which is an illustrative example of a diode formed by implementing transistor 605 in a die. The first terminal of transistor 605 is coupled to a first power input of a constant slew rate driver circuit system 600, which supplies a power supply voltage. The second and third terminals of transistor 605 are coupled to a high-side protection circuit system 610, transistors 615 and 625, diode 620, and current source circuit system 630. The control terminal of transistor 605 is coupled to the high-side protection circuit system 610. Diode 605A couples the first terminal of transistor 605 to the second and third terminals of transistor 605.

[0073] The high-side protection circuit system 610 has a first terminal, a second terminal, a third terminal, a fourth terminal, a fifth terminal, and a sixth terminal. The first terminal of the high-side protection circuit system 610 is coupled to transistor 605. The second terminal of the high-side protection circuit system 610 is coupled to transistors 605, 615, 625, diode 620, and current source circuit system 630. The third terminal of the high-side protection circuit system 610 is coupled to transistors 625 and 650. The fourth terminal of the high-side protection circuit system 610 is coupled to transistor 655 and low-side protection circuit system 665. The fifth terminal of the high-side protection circuit system 610 is coupled to transistor 680. The sixth terminal of the high-side protection circuit system 610 is coupled to low-side protection circuit system 665. (The following is in conjunction with...) Figure 7 An example of a high-side protection circuit system 610 is illustrated and described below. The following section combines... Figure 8 This section describes and illustrates an example of the operation of the high-side protection circuit system 610.

[0074] Transistor 615 (also referred to as a high-side transistor) has a first terminal, a second terminal, a third terminal, and a control terminal. Furthermore, transistor 615 has a body diode 615A, which is an illustrative example of a diode formed by implementing transistor 615 in a die. The first and second terminals of transistor 615 are coupled to transistors 605 and 625, the high-side protection circuit system 610, diode 620, and current source circuit system 630. The third terminal of transistor 615 is coupled to capacitors 640, 645, 695, transistor 660, and resistor 690. The control terminal of transistor 615 is coupled to diode 620, transistors 625, 650, 655, current source circuit system 630, and capacitor 640. Diode 615A couples the first and second terminals of transistor 615 to the third terminal of transistor 615. Transistor 615 is... Figure 2 Another example of transistor 210.

[0075] Diode 620 has a first terminal and a second terminal. The first terminal of diode 620 is coupled to transistors 605, 615, 625, high-side protection circuit system 610, and current source circuit system 630. The second terminal of diode 620 is coupled to transistors 615, 625, 650, 655, current source circuit system 630, and capacitor 640. Figure 6 In this example, diode 620 is a Zener diode.

[0076] Transistor 625 has a first terminal, a second terminal, and a control terminal. The first terminal of transistor 625 is coupled to transistors 605 and 615, high-side protection circuit system 610, diode 620, and current source circuit system 630. The second terminal of transistor 625 is coupled to transistors 615, 650, and 655, diode 620, current source circuit system 630, and capacitor 640. The control terminal of transistor 625 is coupled to voltage protection circuit systems 610 and 665 and transistor 650.

[0077] The current source circuit system 630 has a first terminal, a second terminal, and a control terminal. The first terminal of the current source circuit system 630 is coupled to transistors 605, 615, 625, a high-side protection circuit system 610, and a diode 620. The second terminal of the current source circuit system 630 is coupled to transistors 615, 625, 650, 655, a diode 620, and a capacitor 640. The control terminal of the current source circuit system 630 is coupled to an inverter 635. In some instances, the current source circuit system 630 has one or more additional inputs configured to receive a trimming bit. In such instances, the trimming bit sets the magnitude of the current supplied by the current source circuit system 630. The current source circuit system 630 is... Figure 2 Another example of the current source circuit system 220.

[0078] Inverter 635 has a first terminal and a second terminal. The first terminal of inverter 635 is coupled to the input terminal of a constant slew rate driver circuit system 600, which supplies a digital input signal. The second terminal of inverter 635 is coupled to a current source circuit system 630. Inverter 635 is... Figure 2 Another example of inverter 230.

[0079] Capacitor 640 has a first terminal and a second terminal. The first terminal of capacitor 640 is coupled to transistors 615 and 660, capacitors 645 and 695, and resistor 690. The second terminal of capacitor 640 is coupled to transistors 615, 625, 650, and 655, diode 620, and current source circuit system 630.

[0080] Capacitor 645 has a first terminal and a second terminal. The first terminal of capacitor 645 is coupled to transistors 615 and 660, capacitors 640 and 695, and resistor 690. The second terminal of capacitor 645 is coupled to transistors 650, 655, 660, 670, and 680, diode 675, and current source circuit system 685.

[0081] Transistor 650 has a first terminal, a second terminal, a third terminal, and a control terminal. Furthermore, transistor 650 has a body diode 650A, which is an illustrative example of a diode formed by implementing transistor 650 in a die. The first and second terminals of transistor 650 are coupled to transistors 615, 625, 655, diode 620, current source circuit system 630, and capacitor 640. The third terminal of transistor 650 is coupled to capacitor 645, transistors 655, 660, 670, 680, diode 675, and current source circuit system 685. The control terminal of transistor 650 is coupled to voltage protection circuit systems 610, 665, and transistor 625. Diode 650A couples the first and second terminals of transistor 650 to the third terminal of transistor 650.

[0082] Transistor 655 has a first terminal, a second terminal, a third terminal, and a control terminal. Furthermore, transistor 655 has a body diode 655A, which is an illustrative example of a diode formed by implementing transistor 655 in a die. The first terminal of transistor 655 is coupled to transistors 615, 625, 650, diode 620, current source circuit system 630, and capacitor 640. The second and third terminals of transistor 655 are coupled to capacitor 645, transistors 650, 660, 670, 680, diode 675, and current source circuit system 685. The control terminal of transistor 655 is coupled to voltage protection circuit systems 610 and 665. Diode 655A couples the first terminal of transistor 655 to the second and third terminals of transistor 655.

[0083] Transistor 660 (also referred to as a low-side transistor) has a first terminal, a second terminal, a third terminal, and a control terminal. Furthermore, transistor 660 has a body diode 660A, which is an illustrative example of a diode formed by implementing transistor 660 in a die. The first and second terminals of transistor 660 are coupled to transistor 615, capacitors 640, 645, and 695, the low-side protection circuit system 665, and resistor 690. The third terminal of transistor 660 is coupled to transistor 670. The control terminal of transistor 660 is coupled to the low-side protection circuit system 665. Diode 660A couples the first and second terminals of transistor 660 to the third terminal of transistor 660.

[0084] The low-side protection circuit system 665 has a first terminal, a second terminal, a third terminal, a fourth terminal, a fifth terminal, and a sixth terminal. The first terminal of the low-side protection circuit system 665 is coupled to the input terminal of a constant slew rate driver circuit system 600, which supplies digital input signals. The second and third terminals of the low-side protection circuit system 665 are coupled to a high-side protection circuit system 610. The fourth terminal of the low-side protection circuit system 665 is coupled to transistors 615 and 660, capacitors 640 and 645, and resistor 690. The fifth terminal of the low-side protection circuit system 665 is coupled to the high-side protection circuit system 610 and transistors 625 and 650. The sixth terminal of the low-side protection circuit system 665 is coupled to the high-side protection circuit system 610 and transistor 655. (The following is in conjunction with...) Figure 9A and 9B This section describes and illustrates an example of the low-side protection circuit system 665. The following section combines... Figure 10 This section describes and illustrates an example of the operation of the low-side protection circuit system 665.

[0085] Transistor 670 (also referred to as a low-side transistor) has a first terminal, a second terminal, a third terminal, and a control terminal. Furthermore, transistor 670 has a body diode 670A, which is an illustrative example of a diode formed by implementing transistor 670 in a die. The first terminal of transistor 670 is coupled to transistor 660. The second and third terminals of transistor 670 are coupled to the second power supply terminal of a constant slew rate driver circuit system 600, which supplies a common potential. The control terminal of transistor 670 is coupled to capacitor 645, transistors 650, 655, 680, diode 675, and current source circuit system 685. Diode 670A couples the first terminal of transistor 670 to the second and third terminals of transistor 670. Transistor 670 is... Figure 2 Another example of transistor 250.

[0086] Diode 675 has a first terminal and a second terminal. The first terminal of diode 675 is coupled to capacitor 645, transistors 650, 655, 670, 680, and current source circuit system 685. The second terminal of diode 675 is coupled to a second power supply terminal of constant slew rate driver circuit system 600, which is supplied with a common potential. Figure 6 In this example, diode 675 is a Zener diode.

[0087] Transistor 680 has a first terminal, a second terminal, and a control terminal. The first terminal of transistor 680 is coupled to capacitor 645, transistors 650, 655, and 670, diode 675, and current source circuit system 685. The second terminal of transistor 680 is coupled to the second power supply terminal of constant slew rate driver circuit system 600, which supplies a common potential. The control terminal of transistor 680 is coupled to high-side protection circuit system 610.

[0088] The current source circuit system 685 has a first terminal, a second terminal, and a control terminal. The first terminal of the current source circuit system 685 is coupled to a capacitor 645, transistors 650, 655, 670, 680, and a diode 675. The second terminal of the current source circuit system 685 is coupled to a second power supply terminal of a constant gyration rate driver circuit system 600, which supplies a common potential. The control terminal of the current source circuit system 685 is coupled to an input terminal of the constant gyration rate driver circuit system 600, which supplies a digital input signal. In some instances, the current source circuit system 685 has one or more additional inputs configured to receive a trimming bit. In such instances, the trimming bit sets the magnitude of the current absorbed by the current source circuit system 685. Furthermore, the current source circuit system 685 is configured to absorb current from a capacitor 645. In such instances, the current source circuit system 685 may be referred to as a current absorber circuit system. The current source circuit system 685 is... Figure 2 Another example of the current source circuit system 260.

[0089] Resistor 690 has a first terminal and a second terminal. The first terminal of resistor 690 is coupled to a first power supply terminal of a constant slew rate driver circuit system 600, which is supplied with a power supply voltage. The second terminal of resistor 690 is coupled to transistors 615 and 660, capacitors 640, 645, and 695, and a low-side protection circuit system 665.

[0090] Capacitor 695 has a first terminal and a second terminal. The first terminal of capacitor 695 is coupled to transistors 615 and 660, capacitors 640 and 645, low-side protection circuitry 665, and resistor 690. The second terminal of capacitor 695 is coupled to a second power supply terminal of a constant slew rate driver circuitry 600, which supplies a common potential.

[0091] exist Figure 6 In this example, resistor 690 and capacitor 695 are illustrative representations of a load (e.g., load 120) coupled to the constant slew rate driver circuit system 600. For example, resistor 690 represents the equivalent resistance of load 120, and capacitor 695 represents the equivalent capacitance of load 120. In example operation, the constant slew rate driver circuit system 600 supplies an output voltage to resistor 690 and capacitor 695. Advantageously, the constant slew rate driver circuit system 600 implements... Figure 3 Operation 300 generates rising and falling edges with a slew rate independent of the equivalent capacitance of capacitor 695. Furthermore, the following is combined with... Figure 8 and 10Further description and illustration of the example operation of the constant gyration rate driver circuit system 600.

[0092] exist Figure 6 In these examples, transistors 655, 660, and 670 are n-channel MOSFETs. Alternatively, transistors 655, 660, and 670 may be n-channel FETs, n-channel IGBTs, n-channel JFETs, NPN BJTs, or p-type equivalents with slight modifications. Figure 6 In the examples, transistors 605, 615, and 650 are p-channel MOSFETs. Alternatively, transistors 605, 615, and 650 may be p-channel FETs, p-channel IGBTs, p-channel JFETs, PNP BJTs, or N-type equivalent devices with slight modifications. Transistors 605, 615, 650, 655, 660, and 670 may be depletion-mode devices, drain-extended devices, enhancement-mode devices, natural transistors, or other types of device structure transistors. Furthermore, transistors 605, 615, 650, 655, 660, and 670 may be implemented on / above a silicon substrate (Si), a silicon carbide substrate (SiC), a gallium nitride substrate (GaN), or a gallium arsenide substrate (GaAs).

[0093] Figure 7 As Figure 1 , 2 A schematic diagram of another example of a constant slewing rate drive circuit system 140, 200, 600, and a constant slewing rate drive circuit system 700. Figure 7 In one example, the constant slew rate drive circuit system 700 includes Figure 6 Transistors 605, 615, 625, 650, 655, 660, 670, 680, Figure 6 Diodes 620, 675, Figure 6 Current source circuit systems 630, 685, Figure 6 Inverter 635, Figure 6 Capacitors 640, 645, Figure 6 Examples include the low-side voltage protection circuit system 665 and the high-side voltage protection circuit system 705. Figure 7The example high-side voltage protection circuit system 705 includes a first example resistor 710, a first example diode 715, a second example resistor 720, a second example diode 725, a third example diode 730, a first example transistor 732, a second example transistor 734, a third example transistor 735, a fourth example diode 740, a fourth example transistor 745, a fifth example transistor 750, a third example resistor 752, a fourth example resistor 754, a fifth example diode 755, a first example inverter 760, a second example inverter 765, a sixth example diode 770, an example capacitor 775, a sixth example transistor 780, a seventh example transistor 785, and an example level shifter circuit system 790.

[0094] The constant slew rate driver circuit system 700 has input terminals, output terminals, a first power supply terminal, and a second power supply terminal. The input terminals of the constant slew rate driver circuit system 700 are configured to be coupled to an external circuit system (e.g., Figure 1 The digital core 130), the external circuit system supplies digital input signals (D... IN The output terminals of the constant slew rate driver circuit system 700 are configured to couple to... Figure 1 The load 120, the load 120 being composed of Figure 6 Resistor 690 and Figure 6 The capacitor 695 is illustratively represented. In Figure 7 In the example, the constant slew rate driver circuit system 700 supplies an output voltage (V) at the output terminal. OUT The first power supply terminal of the constant rotational speed driver circuit system 700 is configured to be coupled to a power supply that supplies a power supply voltage (V). CC The second power supply terminal of the constant slew rate driver circuit system 700 is configured to be coupled to a common terminal that supplies a common potential (e.g., ground, AVSS, etc.). Figure 2 , 6 9A and 9B illustrate and describe other examples of the constant gyration rate driver circuit system 700. (In conjunction with...) Figure 3 , 8 Sections 1 and 10 illustrate and describe an example operation of the constant rotational speed drive circuit system 700.

[0095] The high-side voltage protection circuit system 705 has a first terminal, a second terminal, a third terminal, a fourth terminal, a fifth terminal, a sixth terminal, and a seventh terminal. The first terminal of the high-side voltage protection circuit system 705 is coupled to transistor 605. The second terminal of the high-side voltage protection circuit system 705 is coupled to transistors 605, 615, 625, diode 620, and current source circuit system 630. The third terminal of the high-side voltage protection circuit system 705 is coupled to transistors 625 and 650. The fourth terminal of the high-side voltage protection circuit system 705 is coupled to transistor 655 and low-side voltage protection circuit system 665. The fifth terminal of the high-side voltage protection circuit system 705 is coupled to transistor 680. The sixth terminal of the high-side voltage protection circuit system 705 is coupled to low-side protection circuit system 665. The seventh terminal of the high-side voltage protection circuit system 705 is coupled to the second power supply terminal of a constant slew rate driver circuit system 700, which supplies a common potential. The high-side voltage protection circuit system 705 is... Figure 6 An example of a high-side voltage protection circuit system 610. The following section combines... Figure 8 This section describes and illustrates an example of the operation of the high-side voltage protection circuit system 705.

[0096] exist Figure 7 In this example, the second terminal of the high-side voltage protection circuit system 705 can be referred to as the protection power supply terminal, which supplies the protection power supply voltage (V). CC_PROT In some examples, the protection supply voltage is approximately equal to the supply voltage from the first power supply terminal of the constant slew rate driver circuit system 700 minus the voltage drop across diode 605A of transistor 605. In other examples, the protection supply voltage is approximately equal to the output voltage of the constant slew rate driver circuit system 700 minus the voltage drop across diode 615A. In still other examples, the protection supply voltage is approximately equal to the voltage of the package substrate minus the voltage drop across the body diodes 605B and 615B. Diode 605B is an illustrative example of a diode formed by implementing transistor 605 in a die containing a substrate. Diode 615B is an illustrative example of a diode formed by implementing transistor 615 in a die containing a substrate. Furthermore, in Figure 7 In this example, the sixth terminal of the high-side voltage protection circuit system 705 can be referred to as the internal power supply terminal, which supplies the internal power supply voltage (V). CC_INT The internal power supply voltage is further described below.

[0097] Resistor 710 has a first terminal and a second terminal. The first terminal of resistor 710 is coupled to the protection power supply terminal of high-side voltage protection circuit system 705, which supplies the protection power supply voltage. The second terminal of resistor 710 is coupled to transistors 605 and 785 and diode 715.

[0098] Diode 715 has a first terminal and a second terminal. The first terminal of diode 715 is coupled to a protection power supply terminal of a high-side voltage protection circuit system 705, which supplies a protection power supply voltage. The second terminal of diode 715 is coupled to transistors 605 and 785 and resistor 710.

[0099] Resistor 720 has a first terminal and a second terminal. The first terminal of resistor 720 is coupled to diode 730 and transistors 734 and 735. The second terminal of resistor 720 is coupled to diode 725 and transistor 750.

[0100] Diode 725 has a first terminal and a second terminal. The first terminal of diode 725 is coupled to resistor 720 and transistor 750. The second terminal of diode 725 is coupled to a second power supply terminal of a constant slew rate driver circuit system 700, which is supplied with a common potential. Figure 7 In some examples, diode 725 is configured as a clamping circuit system that clamps the voltage difference across diode 725 to a clamping voltage. In other examples, diode 725 is a Zener diode.

[0101] Diode 730 has a first terminal and a second terminal. The first terminal of diode 730 is coupled to a protection power supply terminal of a high-side voltage protection circuit system 705, which supplies a protection power supply voltage. The second terminal of diode 730 is coupled to resistor 720 and transistors 734 and 735. Figure 7 In this example, diode 730 is a Zener diode.

[0102] Transistor 732 has a first terminal, a second terminal, and a control terminal. The first terminal of transistor 732 is coupled to a protection power supply terminal of a high-side voltage protection circuit system 705, which supplies a protection power supply voltage. The second terminal and the control terminal of transistor 732 are coupled to transistor 734.

[0103] Transistor 734 has a first terminal, a second terminal, and a control terminal. The first terminal of transistor 734 is coupled to transistor 732. The second terminal and control terminal of transistor 734 are coupled to resistor 720, diode 730, and transistor 735.

[0104] Transistor 735 has a first terminal, a second terminal, a third terminal, and a control terminal. Furthermore, transistor 735 has a body diode 735A, which is an illustrative example of a diode formed by implementing transistor 735 in a die. The first and second terminals of transistor 735 are coupled to the protection power supply terminal of a high-side voltage protection circuit system 705, which supplies a protection power supply voltage. The third terminal of transistor 735 is coupled to diode 740, transistor 745, and resistor 752. The control terminal of transistor 735 is coupled to resistor 720, diode 730, and transistor 734. Diode 735A couples the first and second terminals of transistor 735 to the third terminal of transistor 735.

[0105] Diode 740 has a first terminal and a second terminal. The first terminal of diode 740 is coupled to a protection power supply terminal of a high-side voltage protection circuit system 705, which supplies a protection power supply voltage. The second terminal of diode 740 is coupled to transistors 735 and 745 and resistor 752. Figure 7 In this example, diode 740 is a Zener diode.

[0106] Transistor 745 has a first terminal, a second terminal, a third terminal, and a control terminal. Furthermore, transistor 745 has a body diode 745A, which is an illustrative example of a diode formed by implementing transistor 745 in a die. The first and second terminals of transistor 745 are coupled to the protection power supply terminal of a high-side voltage protection circuit system 705, which supplies a protection power supply voltage. The third terminal of transistor 745 is coupled to a low-side voltage protection circuit system 665, transistor 750, inverters 760 and 765, diode 770, and capacitor 775. The control terminal of transistor 745 is coupled to transistor 735, diode 740, and resistor 752. Diode 745A couples the first and second terminals of transistor 745 to the third terminal of transistor 745.

[0107] Transistor 750 has a first terminal, a second terminal, a third terminal, and a control terminal. Furthermore, transistor 750 has a body diode 750A, which is an illustrative example of a diode formed by implementing transistor 750 in a die. The first terminal of transistor 750 is coupled to a protection power supply terminal of a high-side voltage protection circuit system 705, which supplies a protection power supply voltage. The second and third terminals of transistor 750 are coupled to a low-side voltage protection circuit system 665, transistor 745, inverters 760 and 765, diode 770, and capacitor 775. The control terminal of transistor 750 is coupled to resistor 720 and diode 725. Diode 750A couples the first terminal of transistor 750 to the second and third terminals of transistor 750.

[0108] Resistor 752 has a first terminal and a second terminal. The first terminal of resistor 752 is coupled to transistors 735 and 745 and diode 740. The second terminal of resistor 752 is coupled to resistor 754, diode 755 and inverter 760.

[0109] Resistor 754 has a first terminal and a second terminal. The first terminal of resistor 754 is coupled to resistor 752, diode 755, and inverter 760. The second terminal of resistor 754 is coupled to a second power supply terminal of constant slew rate driver circuit system 700, which supplies a common potential.

[0110] Diode 755 has a first terminal and a second terminal. The first terminal of diode 755 is coupled to resistors 752 and 754 and inverter 760. The second terminal of diode 755 is coupled to a second power supply terminal of a constant slew rate driver circuit system 700, which is supplied with a common potential. Figure 7 In this example, diode 755 is a Zener diode.

[0111] Inverter 760 has a first terminal, a second terminal, a third terminal, and a fourth terminal. The first terminal of inverter 760 (also referred to as the input terminal) is coupled to resistors 752 and 754 and diode 755. The second terminal of inverter 760 (also referred to as the output terminal) is coupled to transistors 655 and 785, a low-side voltage protection circuit system 665, and inverter 765. The third terminal of inverter 760 is coupled to the low-side voltage protection circuit system 665, transistors 745 and 750, inverter 765, diode 770, and capacitor 775. The fourth terminal of inverter 760 is coupled to the second power supply terminal of a constant slew rate driver circuit system 700, which supplies a common potential.

[0112] Inverter 765 has a first terminal, a second terminal, a third terminal, and a fourth terminal. The first terminal of inverter 765 (also referred to as the input terminal) is coupled to transistors 655 and 785, a low-side voltage protection circuit system 665, and inverter 760. The second terminal of inverter 765 (also referred to as the output terminal) is coupled to transistor 780 and a level shifter circuit system 790. The third terminal of inverter 765 is coupled to the low-side voltage protection circuit system 665, transistors 745 and 750, inverter 760, diode 770, and capacitor 775. The fourth terminal of inverter 765 is coupled to the second power supply terminal of a constant slew rate driver circuit system 700, which supplies a common potential.

[0113] Diode 770 has a first terminal and a second terminal. The first terminal of diode 770 is coupled to a low-side voltage protection circuit system 665, transistors 745 and 750, inverters 760 and 765, and capacitor 775. The second terminal of diode 770 is coupled to a second power supply terminal of a constant slew rate driver circuit system 700, which is supplied with a common potential. Figure 7 In this example, diode 770 is a Zener diode.

[0114] Capacitor 775 has a first terminal and a second terminal. The first terminal of capacitor 775 is coupled to a low-side voltage protection circuit system 665, transistors 745 and 750, inverters 760 and 765, and diode 770. The second terminal of capacitor 775 is coupled to a second power supply terminal of a constant slew rate driver circuit system 700, which is supplied with a common potential.

[0115] Transistor 780 has a first terminal, a second terminal, a third terminal, and a control terminal. Furthermore, transistor 780 has a body diode 780A, which is an illustrative example of a diode formed by implementing transistor 780 in a die. The first terminal of transistor 780 is coupled to transistor 785. The second and third terminals of transistor 780 are coupled to a second power supply terminal of a constant slew rate driver circuit system 700, which supplies a common potential. The control terminal of transistor 780 is coupled to a power-on input terminal, which provides indication... Figure 1 The power-on signal indicates whether device 110 is powered on. Diode 780A couples the first terminal of transistor 780 to the second and third terminals of transistor 780.

[0116] Transistor 785 has a first terminal, a second terminal, a third terminal, and a control terminal. Furthermore, transistor 785 has a body diode 785A and a diode 785B, which are illustrative examples of diodes formed by implementing transistor 785 in a die. The first terminal of transistor 785 is coupled to transistor 605, resistor 710, and diode 715. The second and third terminals of transistor 785 are coupled to transistor 780. The control terminal of transistor 785 is coupled to transistor 655, low-side voltage protection circuit system 665, and inverters 760 and 765. Diode 785A couples the first terminal of transistor 785 to the second and third terminals of transistor 785. Diode 785B couples the first terminal of transistor 785 to the substrate of a package containing a constant rotational speed driver circuit system 700.

[0117] The level shifter circuit system 790 has a first terminal and a second terminal. The first terminal of the level shifter circuit system 790 is coupled to transistor 680 and inverter 765. The second terminal of the level shifter circuit system 790 is coupled to transistors 625 and 650.

[0118] exist Figure 7 In these examples, transistors 655, 660, 670, 750, 780, and 785 are n-channel MOSFETs. Alternatively, transistors 655, 660, 670, 750, 780, and 785 can be n-channel FETs, n-channel IGBTs, n-channel JFETs, NPN BJTs, or p-type equivalents with slight modifications. Figure 7 In the examples, transistors 605, 615, 650, 732, 734, 735, and 745 are p-channel MOSFETs. Alternatively, transistors 605, 615, 650, 732, 734, 735, and 745 can be p-channel FETs, p-channel IGBTs, p-channel JFETs, PNP BJTs, or N-type equivalent devices with slight modifications. Transistors 605, 615, 650, 655, 660, 670, 732, 734, 735, 745, 750, 780, and 785 can be depletion-mode devices, extended-drain devices, enhancement-mode devices, natural transistors, or other types of device structure transistors. Furthermore, transistors 605, 615, 650, 655, 660, 670, 732, 734, 735, 745, 750, 780, and 785 can be implemented in or on a silicon substrate (Si), a silicon carbide substrate (SiC), a gallium nitride substrate (GaN), or a gallium arsenide substrate (GaAs).

[0119] Figure 8 To indicate that it can be used Figure 6 and 7High-side voltage protection circuit systems 610, 705 or more generally Figure 6 and 7 A flowchart of an instance implementation of at least one of the constant rotational speed drive circuit systems 600 and 700, including execution, instantiation, or ongoing instance operation 800. Figure 8 Instance operation 800 begins at box 805. At box 805, Figure 7 Transistor 780 is powered on. (Box 805). In some instances, transistor 780 receives a power-on signal, which indicates... Figure 1 The state of device 110. In this example, a power-on signal turns on transistor 780 in response to device 110 being powered on. In example operation, in response to device 110 being powered on and Figure 7 The inverter 760 turns on transistor 785, and transistor 780 allows current to flow. Figure 7 The resistor is 710.

[0120] Figure 6 and 7 Transistor 605 receives the increased supply voltage (box 810). In some instances, the supply voltage of the constant slew rate driver circuitry 600, 700 ramps up during power-up. In such instances, device 110 includes a voltage source circuitry to generate the supply voltage when powered.

[0121] Transistor 605 uses the supply voltage to forward bias the first high-side FET body diode to initialize the protection supply voltage (Box 815). In example operation, the protection supply voltage (V) CC_PROT The high-side voltage protection circuit systems 610 and 705 are powered, and these circuit systems also control transistor 605. In such examples, as the power supply voltage at the first power supply terminal of the constant slew rate driver circuit systems 600 and 700 increases above the common potential, diode 605A of transistor 605 is forward biased. Diode 605A of transistor 605 sets the protection power supply voltage to be equal to the power supply voltage minus the voltage drop across diode 605A. Advantageously, the forward biased diode 605A sets the protection power supply voltage, which powers the high-side voltage protection circuit systems 610 and 705. Advantageously, the high-side voltage protection circuit systems 610 and 705 can turn on transistor 605 in response to diode 605A setting the protection power supply voltage.

[0122] Figure 7Transistors 745 and 750 use a protection supply voltage to generate an internal supply voltage (VCC_INT) (Box 820). In some instances, diode 725 is a Zener diode that clamps the voltage difference across diode 725 at a clamping voltage. For example, diode 725 has a maximum voltage difference of six volts in response to a clamping voltage set to six volts. In one example operation, resistor 720 sets the control terminal of transistor 735 to approximately equal to the protection supply voltage until the protection supply voltage exceeds the clamping voltage of diode 725. In another example operation, resistor 720 disconnects transistor 735 in response to a protection supply voltage less than the clamping voltage of diode 725.

[0123] Furthermore, resistors 720 and transistors 732 and 734 continue to keep transistor 735 off until the protection supply voltage exceeds the combination of the quiescent voltage drop across resistor 720 (described in further detail below), the clamping voltage of diode 725, and the combined threshold voltage of transistors 732 and 734. When transistors 732 and 734 are fully enabled, the voltage drop across resistor 720 is approximately equal to the current through transistors 732 and 734 multiplied by the resistance of resistor 720. When transistor 735 is off, resistors 752 and 754 pull the control terminal of transistor 745 to a common potential. During this type of operation, resistors 752 and 754 turn on transistor 745 to generate an internal supply voltage approximately equal to the protection supply voltage. Transistor 745 supplies the internal supply voltage to Figure 6 and 7 The circuit includes a low-side voltage protection system 665, inverters 760 and 765, a diode 770, and a capacitor 775. Advantageously, an internal power supply voltage powers the inverters 760 and 765 and sets the logic level of the outputs of the inverters 760 and 765 relative to a common potential.

[0124] Inverters 760 and 765 set the high-side protection signal to logic low (box 825). In some instances, resistor 720 and transistors 732 and 734 disconnect transistor 735 in response to a combination of the protection supply voltage being less than the reset voltage of resistor 720, the clamping voltage of diode 725, and the combined threshold voltage of transistors 732 and 734. In such instances, resistors 752 and 754 pull down the input terminals of inverter 760, which sets the inverted high-side protection signal to logic high (e.g., logic one). Inverter 765 generates a high-side protection signal by inverting the inverted high-side protection signal from inverter 760, which sets the high-side protection signal to logic low. Advantageously, the high-side protection signal, when set to logic low, indicates a safe state.

[0125] Figure 6 and 7Transistors 650 and 655 are connected to the high-side control terminal and the low-side control terminal (box 830). In some instances, Figure 7 Inverters 760 and 765 respond to protection power supply voltage being less than the on-state voltage. Figure 7 Transistors 650 and 655 are turned on (e.g., enabled, causing conduction) by the voltage of transistor 735. In such an example, inverter 760 generates an inverted high-side protection signal with a logic high state, and inverter 765 generates a high-side protection signal with a logic low state. Transistor 650 is turned on in response to a protection signal with a logic zero state. Transistor 655 is turned on in response to an inverted protection signal with a logic one state. Advantageously, transistors 650 and 655 allow Figure 6 and 7 The current source circuit systems 630 and 685 control the current source circuit system when it is turned on. Figure 6 and 7 Transistors 615 and 670.

[0126] Resistor 710 and transistor 785 are switched on using a high-side protection signal (box 835). In some instances, a power-on signal switches on transistor 780, and an inverting high-side protection signal from inverter 760 is switched on. Figure 7 Transistor 785. In such an example, transistors 780 and 785 form a current path through resistor 710 in response to being turned on. The current path through resistor 710 generates a gate-source voltage across transistor 605, which turns on transistor 605.

[0127] Transistor 605 regulates the protection power supply voltage (box 845). Transistor 605, in response to the current flowing through resistor 710 and transistors 780, 785, sets the protection power supply voltage to approximately equal to the power supply voltage at the first power supply terminal of the constant rotation speed driver circuit system 600, 700. Advantageously, the current flowing through resistor 710 controls transistor 605.

[0128] The constant rotation speed driver circuit systems 600 and 700 drive the output through control terminals. Figure 3 Operation 300). Furthermore, in some instances, Figure 3 and 10 Operations 300 and 1000 can occur in parallel. For example, when the constant speed drive circuitry 600 and 700 drive the output voltage, the low-side voltage protection circuitry 665 can perform one or more of operations 1000 to increase the voltage. Figure 6 and 7The voltage at the control terminal of transistor 660. In such an example, raising the voltage at the control terminal of transistor 660 generates a positive gate-source voltage that allows transistor 660 to turn on during the falling edge. The following is combined with... Figure 10 and 12 Further description and illustration of such example operations. Advantageously, the high-side voltage protection circuit systems 610, 705 allow transistors 615, 670 and current source circuit systems 630, 685 to be implemented using constant rotation speed driver circuit systems 600, 700. Figure 3 Constant rotational speed drive operation.

[0129] Transistor 735 determines whether the protection supply voltage is greater than a threshold voltage (box 845). In some instances, resistor 720 and transistors 732, 734 set the control terminal of transistor 735 to approximately equal to the protection supply voltage in response to a protection supply voltage less than the threshold voltage. In such instances, the threshold voltage is equal to the quiescent voltage of resistor 720 plus the clamping voltage of diode 725 plus the combined threshold voltage of transistors 732, 734. For example, when diode 725 has a clamping voltage of six volts and transistors 732, 734 have a combined threshold voltage of 1.4 volts, the threshold voltage is approximately equal to 8.4 volts. In such instances, the resistance of resistor 720 is selected to set the quiescent voltage of resistor 720 to one volt. Advantageously, transistor 735 is turned off when the protection supply voltage is less than the threshold voltage. Advantageously, transistor 735 is turned on when the protection supply voltage is greater than the threshold voltage.

[0130] If transistor 735 determines that the protection supply voltage is greater than the threshold voltage (e.g., the result returned by block 845), inverters 760 and 765 set the high-side protection signal to logic high (block 850). In a typical operation, the protection supply voltage turns on transistor 735 in response to being greater than the threshold voltage. In this type of operation, resistors 752 and 754 divide the protection supply voltage to set the input terminal of inverter 760 to logic high. Inverter 760 inverts the logic high to set the inverted high-side protection signal to logic low. Inverter 765 inverts the logic low of the inverted high-side protection signal to set the high-side protection signal to logic high. And, transistor 745 turns off in response to transistor 735 being turned on. When transistor 745 is turned off by transistor 735, transistor 750 continues to use the clamping voltage of diode 725 to generate the internal supply voltage. For example, transistor 750 adjusts the protection supply voltage to set the internal supply voltage to five volts in response to six volts from diode 725. Advantageously, even though the protection power supply voltage is greater than the threshold voltage, the logic levels of the inverted high-side protection signal and the high-side protection signal remain stable.

[0131] Transistors 650 and 655 disconnect the high-side control terminal and the low-side control terminal (box 855). In some instances, inverters 760 and 765 disconnect transistors 650 and 655 in response to a protection supply voltage exceeding a threshold voltage. In such instances, inverter 760 generates an inverted high-side protection signal with a logic low state, and inverter 765 generates a high-side protection signal with a logic high state. Transistor 650 disconnects in response to a high-side protection signal with a logic high state, and transistor 655 disconnects in response to an inverted high-side protection signal with a logic low state. Furthermore, in some instances, Figure 7 The level shifter circuit system 790 shifts (e.g., offsets) the voltage of the logic level of the high-side protection signal from a first logic level (e.g., zero to five volts) to a shifted logic level (e.g., protection supply voltage minus five volts to the protection supply voltage). In such an example, the level shifter circuit system 790 uses the shifted logic level to control transistors 650 and 625.

[0132] Figure 6 and 7 Transistor 625 is pulled high to disable the second high-side transistor (box 860). In some instances, a high-side protection signal from inverter 765 turns on transistor 625 in response to being in a logic high state. In some such instances, level shifter circuitry 790 shifts the logic level of the high-side protection signal to be relevant to the protection supply voltage, ensuring that transistor 625 remains on despite a relatively high protection supply voltage. In example operation, transistor 625 prevents transistor 615 from turning on in response to setting the control terminal of transistor 615 to be equal to the protection supply voltage. Advantageously, high-side voltage protection circuitry 610, 705 disables transistor 615 in response to detecting an unsafe protection supply voltage.

[0133] Figure 6 and 7 Transistor 680 is pulled down to the low-side control terminal to disable the low-side transistor (box 865). In some instances, a high-side protection signal from inverter 765 turns on transistor 680 in response to a logic high state. In example operation, transistor 680 prevents transistor 670 from turning on in response to setting the control terminal of transistor 670 to equal the common potential. Advantageously, high-side voltage protection circuitry 610, 705 disables transistor 670 in response to detecting an unsafe protection supply voltage. Control continues to return to box 845.

[0134] If transistor 735 determines that the protection supply voltage does not exceed the threshold voltage (e.g., block 845 returns a no result), then Figure 7Diodes 605B, 615B, and 785B determine whether the protection supply voltage is less than the negative threshold voltage (Box 870). When the supply voltage of the constant slew rate driver circuitry 600 and 700 is set to a negative voltage, the voltage of the package substrate held at the common potential becomes the highest voltage in the constant slew rate driver circuitry 600 and 700. For example, if the second power supply terminal or output terminal of the constant slew rate driver circuitry 600 and 700 is set to a voltage greater than the supply voltage at the first power supply terminal, then the supply voltage of the constant slew rate driver circuitry 600 and 700 is negative. During such instance operation, the negative voltage forward biases diodes 605B, 715B, and 785B, which prevents transistors 605, 615, 660, and 670 from being accurately controlled by voltage protection circuitry 610, 665, and 705. If diodes 605B, 615B, and 785B determine that the protection power supply voltage is not less than the negative threshold voltage (e.g., block 870 returns a negative result), then control continues to return to operation 300 between blocks 840 and 845.

[0135] If diodes 605B, 615B, and 785B determine that the protection supply voltage is less than the negative threshold voltage (e.g., the result returned by block 870), then resistor 710 disconnects the first high-side transistor (block 875). In some instances, diodes 605B, 615B, and 785B supply current to resistor 710 in response to being forward biased. In such instances, the current from diodes 605B, 615B, and 785B causes resistor 710 to set the gate-source voltage of transistor 605 to a voltage close to zero, which disables transistor 605. Advantageously, the current from diodes 605B, 615B, and 785B disconnects transistor 605. Advantageously, diodes 605B, 615B, and 785B protect the first power supply terminal of the constant rotational speed driver circuit system 600, 700 from current generated by the output terminal or the second power supply terminal being set to a voltage greater than the supply voltage and the voltage of the package substrate. Control continues to block 845.

[0136] Although reference Figure 8 The flowcharts described herein illustrate the example methods, but implementation methods may also be used in this specification. Figure 6 and 7 This refers to many other methods of the high-side voltage protection circuitry system 610, 705, or more generally, the constant rotation speed driver circuitry system 600, 700. For example, the execution order of the blocks can be changed, or some of the blocks described can be altered, eliminated, or combined. Similarly, in the manufacturing process, additional operations may be included before, between, or after the blocks shown in the illustrated examples.

[0137] Figure 9A and 9BAs Figure 1 , 2 A schematic diagram of another example of the constant gyration rate drive circuit systems 140, 200, 600, and 700, and the constant gyration rate drive circuit system 900. Figure 9A and 9B In one example, the constant slew rate drive circuit system 900 includes Figure 6 Transistors 605, 615, 625, 650, 655, 660, 670, 680, Figure 6 High-side voltage protection circuit system 610 Figure 6 Diodes 620, 675, Figure 6 Current source circuit systems 630, 685, Figure 6 Inverter 635, Figure 6 Capacitors 640 and 645, and example low-side voltage protection circuit system 903. Figure 9A The example low-side voltage protection circuit system 903 includes a first example resistor 906, a first example transistor 909, a second example transistor 912, a third example transistor 915, a first example logic device 918, a second example resistor 921, a first example diode 924, an example capacitor 929, a second example diode 930, a fourth example transistor 933, a second example logic device 936, a fifth example transistor 939, a third example resistor 942, a third example diode 945, a sixth example transistor 948, and a seventh example... Transistor 951, third instance logic device 954, fourth instance diode 957, fourth instance resistor 960, eighth instance transistor 963, ninth instance transistor 966, fourth instance logic device 969, fifth instance resistor 972, tenth instance transistor 975, fifth instance diode 978, sixth instance diode 981, sixth instance resistor 984, eleventh instance transistor 987, seventh instance resistor 988, first instance inverter 990, second instance inverter 993, and instance level shifter circuit system 996.

[0138] The constant slew rate driver circuit system 900 has input terminals, output terminals, a first power supply terminal, and a second power supply terminal. The input terminals of the constant slew rate driver circuit system 900 are configured to be coupled to an external circuit system (e.g., Figure 1 The digital core 130), the external circuit system supplies digital input signals (D... IN The output terminals of the constant slew rate driver circuit system 900 are configured to couple to... Figure 1 The load 120, the load 120 being composed of Figure 6 and 7 Resistor 690 and Figure 6 and7 The capacitor 695 is illustratively represented. In Figure 9A and 9B In this example, the constant slew rate driver circuit system 900 supplies an output voltage (V) at the output terminal. OUT The first power supply terminal of the constant slew rate driver circuit system 900 is configured to be coupled to a power supply that supplies a power supply voltage (V). CC The second power supply terminal of the constant slew rate driver circuit system 900 is configured to be coupled to a common terminal that supplies a common potential (e.g., ground, AVSS, etc.). Combined with Figure 2 , 6 Section 7 illustrates and describes other examples of the constant gyration rate drive circuit system 900. (In conjunction with...) Figure 3 , 8 Section 10 illustrates and describes an example operation of the constant rotational speed drive circuit system 900.

[0139] The low-side voltage protection circuit system 903 has a first terminal, a second terminal, a third terminal, a fourth terminal, a fifth terminal, and a sixth terminal. The first terminal of the low-side voltage protection circuit system 903 is coupled to the input terminal of a constant slew rate driver circuit system 900, which supplies a digital input signal. The second and third terminals of the low-side voltage protection circuit system 903 are coupled to a high-side protection circuit system 610. The fourth terminal of the low-side voltage protection circuit system 903 is coupled to the output terminal of the constant slew rate driver circuit system 900. The fifth terminal of the low-side voltage protection circuit system 903 is coupled to the high-side protection circuit system 610 and transistors 625 and 650. The sixth terminal of the low-side voltage protection circuit system 903 is coupled to transistor 655. The low-side voltage protection circuit system 903 is... Figure 6 and 7 An example of a low-side voltage protection circuit system 665 is provided below. Figure 10 This section describes and illustrates an example of the operation of the low-side voltage protection circuit system 903.

[0140] Resistor 906 has a first terminal and a second terminal. The first terminal of resistor 906 is coupled to the output terminal of a constant slew rate driver circuit system 900, which supplies the driver output voltage. The second terminal of resistor 906 is coupled to transistors 660 and 909.

[0141] Transistor 909 has a first terminal, a second terminal, a third terminal, and a control terminal. Furthermore, transistor 909 has a first body diode 909A and a second body diode 909B, which are illustrative examples of diodes formed by implementing transistor 909 in a die. The first terminal of transistor 909 is coupled to transistor 660 and resistor 906. The second and third terminals of transistor 909 are coupled to resistors 921 and 960, diodes 924, 930, and 957, capacitor 929, and transistor 963. The control terminal of transistor 909 is coupled to transistor 912, resistor 921, and diode 924. Diode 909A couples the first terminal of transistor 909 to the second and third terminals of transistor 909. Diode 909B couples the second and third terminals of transistor 909 to the packaging substrate of the die in which transistor 909 is implemented.

[0142] Transistor 912 has a first terminal, a second terminal, a third terminal, and a control terminal. Furthermore, transistor 912 has a first body diode 912A and a second body diode 912B, which are illustrative examples of diodes formed by implementing transistor 912 in a die. The first terminal of transistor 912 is coupled to transistor 909, resistor 921, and diode 924. The second and third terminals of transistor 912 are coupled to transistor 915. The control terminal of transistor 912 is coupled to transistor 655 and inverters 990 and 993. Diode 912A couples the first terminal of transistor 912 to the second and third terminals of transistor 912. Diode 912B couples the first terminal of transistor 912 to the packaging substrate of the die in which transistor 912 is implemented.

[0143] Transistor 915 has a first terminal, a second terminal, a third terminal, and a control terminal. Furthermore, transistor 915 has a body diode 915A, which is an illustrative example of a diode formed by implementing transistor 915 in a die. The first terminal of transistor 915 is coupled to transistor 912. The second and third terminals of transistor 915 are coupled to a second power supply terminal of a constant slew rate driver circuit system 900, which supplies a common potential. The control terminal of transistor 915 is coupled to logic device 918. Diode 915A couples the first terminal of transistor 915 to the second and third terminals of transistor 915.

[0144] Logic device 918 has a first input terminal, a second input terminal, and an output terminal. The first input terminal of logic device 918 is coupled to an output enable terminal, which supplies output enable (EN_DOUT). The second input terminal of logic device 918 is coupled to an inverted high-side protection signal from high-side voltage protection circuitry 610. The output terminal of logic device 918 is coupled to transistor 915. Figure 9A In this example, logic device 918 is an AND gate. Alternatively, logic device 918 may be removed or replaced with an alternative logic circuit system.

[0145] Resistor 921 has a first terminal and a second terminal. The first terminal of resistor 921 is coupled to transistors 909 and 963, diodes 924, 930, and 957, capacitor 929, and resistor 960. The second terminal of resistor 921 is coupled to transistors 909 and 912 and diode 924.

[0146] Diode 924 has a first terminal and a second terminal. The first terminal of diode 924 is coupled to transistors 909 and 963, resistors 921 and 960, capacitor 929, and diodes 924, 930, and 957. The second terminal of diode 924 is coupled to transistors 909 and 912 and resistor 921. Figure 9A In this example, diode 924 is a Zener diode.

[0147] Capacitor 929 has a first terminal and a second terminal. The first terminal of capacitor 929 is coupled to transistors 909 and 963, resistors 921 and 960, and diodes 924, 930, and 957. The second terminal of capacitor 929 is coupled to diode 930 and transistors 933 and 939.

[0148] Diode 930 has a first terminal and a second terminal. The first terminal of diode 930 is coupled to transistors 909 and 963, resistors 921 and 960, diodes 924 and 957, and capacitor 929. The second terminal of diode 930 is coupled to capacitor 929 and transistors 933 and 939. Figure 9A In this example, diode 930 is a Zener diode.

[0149] Transistor 933 has a first terminal, a second terminal, a third terminal, and a control terminal. Furthermore, transistor 933 has a body diode 933A, which is an illustrative example of a diode formed by implementing transistor 933 in a die. The first terminal of transistor 933 is coupled to capacitor 929, diode 930, and transistor 939. The second and third terminals of transistor 933 are coupled to the second power supply terminal of a constant slew rate driver circuit system 900, which supplies a common potential. The control terminal of transistor 933 is coupled to logic device 936. Diode 933A couples the first terminal of transistor 933 to the second and third terminals of transistor 933.

[0150] Logic device 936 has a first input terminal, a second input terminal, and an output terminal. The first input terminal of logic device 936 is coupled to the input terminal of a constant slew rate driver circuit system 900, which supplies digital input signals. The second input terminal of logic device 936 is coupled to a high-side voltage protection circuit system 610, which supplies an inverting high-side protection signal. Figure 9A In this example, logic device 936 is an AND gate. Alternatively, logic device 936 may be removed or replaced with an alternative logic circuit system.

[0151] Transistor 939 has a first terminal, a second terminal, a third terminal, and a control terminal. Furthermore, transistor 939 has a body diode 939A, which is an illustrative example of a diode formed by implementing transistor 939 in a die. The first terminal of transistor 939 is coupled to capacitor 929, diode 930, and transistor 933. The second and third terminals of transistor 939 are coupled to resistor 942, diode 945, and transistor 948. The control terminal of transistor 939 is coupled to resistor 942, diode 945, and transistors 948 and 951. Diode 939A couples the first terminal of transistor 939 to the second and third terminals of transistor 939.

[0152] Resistor 942 has a first terminal and a second terminal. The first terminal of resistor 942 is coupled to transistors 939, 948 and diode 945. The second terminal of resistor 942 is coupled to transistors 939, 948, 951 and diode 945.

[0153] Diode 945 has a first terminal and a second terminal. The first terminal of diode 945 is coupled to transistors 939 and 948 and resistor 942. The second terminal of diode 945 is coupled to transistors 939, 948, and 951 and resistor 942. Figure 9AIn this example, diode 945 is a Zener diode.

[0154] Transistor 948 has a first terminal, a second terminal, a third terminal, and a control terminal. Furthermore, transistor 948 has a body diode 948A, which is an illustrative example of a diode formed by implementing transistor 948 in a die. The first terminal of transistor 948 is coupled to a high-side voltage protection circuit system 610, which supplies an internal power supply voltage. The second and third terminals of transistor 948 are coupled to transistor 939, resistor 942, and diode 945. The control terminal of transistor 948 is coupled to transistors 939 and 951, resistor 942, and diode 945. Diode 948A couples the first terminal of transistor 948 to the second and third terminals of transistor 948.

[0155] Transistor 951 has a first terminal, a second terminal, a third terminal, and a control terminal. Furthermore, transistor 951 has a body diode 951A, which is an illustrative example of a diode formed by implementing transistor 951 in a die. The first terminal of transistor 951 is coupled to transistors 939 and 948, resistor 942, and diode 945. The second and third terminals of transistor 951 are coupled to the second power supply terminal of a constant slew rate driver circuit system 900, which supplies a common potential. The control terminal of transistor 951 is coupled to logic device 954. Diode 951A couples the first terminal of transistor 951 to the second and third terminals of transistor 951.

[0156] Logic device 954 has a first input terminal, a second input terminal, and an output terminal. The first input terminal of logic device 954 is coupled to an inverter 635, which supplies an inverted digital input signal. The second input terminal of logic device 954 is coupled to a high-side voltage protection circuit system 610, which supplies an inverted high-side protection signal. The output terminal of logic device 954 is coupled to a transistor 951. Figure 9A In this example, logic device 954 is an AND gate. Alternatively, logic device 954 may be removed or replaced with an alternative logic circuit system.

[0157] Diode 957 has a first terminal and a second terminal. The first terminal of diode 957 is coupled to transistors 909 and 963, resistors 921 and 960, diodes 924 and 930, and capacitor 929. The second terminal of diode 957 is coupled to resistor 960 and transistors 963 and 966. Figure 9A In this example, diode 957 is a Zener diode.

[0158] Resistor 960 has a first terminal and a second terminal. The first terminal of resistor 960 is coupled to transistors 909 and 963, resistor 921, diodes 924, 930, and 957, and capacitor 929. The second terminal of resistor 960 is coupled to diode 957 and transistors 963 and 966.

[0159] Transistor 963 has a first terminal, a second terminal, a third terminal, and a control terminal. Furthermore, transistor 963 has a body diode 963A, which is an illustrative example of a diode formed by implementing transistor 963 in a die. The first terminal of transistor 963 is coupled to a high-side voltage protection circuit system 610, which supplies an internal power supply voltage. The second and third terminals of transistor 963 are coupled to transistor 909, resistors 921 and 960, diodes 924, 930, 957, and capacitor 929. The control terminal of transistor 963 is coupled to diode 957, resistor 960, and transistor 966. Diode 963A couples the first terminal of transistor 963 to the second and third terminals of transistor 963.

[0160] Transistor 966 has a first terminal, a second terminal, a third terminal, and a control terminal. Furthermore, transistor 966 has a body diode 966A, which is an illustrative example of a diode formed by implementing transistor 966 in a die. The first terminal of transistor 966 is coupled to diode 957, resistor 960, and transistor 963. The second and third terminals of transistor 966 are coupled to the second power supply terminal of a constant slew rate driver circuit system 900, which supplies a common potential. The control terminal of transistor 966 is coupled to logic device 969. Diode 966A couples the first terminal of transistor 966 to the second and third terminals of transistor 966.

[0161] Logic device 969 has a first input terminal, a second input terminal, and an output terminal. The first input terminal of logic device 969 is coupled to the input terminal of a constant slew rate driver circuit system 900, which supplies digital input signals. The second input terminal of logic device 969 is coupled to a high-side voltage protection circuit system 610, which supplies an inverting high-side protection signal. The output terminal of logic device 969 is coupled to a transistor 966.

[0162] Resistor 972 has a first terminal and a second terminal. The first terminal of resistor 972 is coupled to the output terminal of a constant slew rate driver circuit system 900, which supplies the driver output voltage. The second terminal of resistor 972 is coupled to transistor 975 and diode 981.

[0163] Transistor 975 has a first terminal, a second terminal, a third terminal, and a control terminal. Furthermore, transistor 975 has a body diode 975A, which is an illustrative example of a diode formed by implementing transistor 975 in a die. The first terminal of transistor 975 is coupled to a second power supply terminal of a constant slew rate driver circuit system 900, which supplies a common potential. The second terminal of transistor 975 is coupled to a high-side voltage protection circuit system 610, which supplies an internal power supply voltage. The third terminal of transistor 975 is coupled to resistors 984 and 987. The control terminal of transistor 975 is coupled to resistor 972. Diode 975A couples the second terminal of transistor 975 to the third terminal of transistor 975.

[0164] Diode 978 has a first terminal and a second terminal. The first terminal of diode 978 is coupled to a second power supply terminal of a constant slew rate driver circuit system 900, which supplies a common potential. The second terminal of diode 978 is coupled to diode 981. Figure 9A In this example, diode 978 is a Zener diode.

[0165] Diode 981 has a first terminal and a second terminal. The first terminal of diode 981 is coupled to resistor 972 and transistor 975. The second terminal of diode 981 is coupled to diode 978. Figure 9A In this example, diode 981 is a Zener diode.

[0166] Resistor 984 has a first terminal and a second terminal. The first terminal of resistor 984 is coupled to a high-side voltage protection circuit system 610, which supplies an internal power supply voltage. The second terminal of resistor 984 is coupled to transistors 975 and 987.

[0167] Transistor 987 has a first terminal, a second terminal, and a control terminal. The first terminal of transistor 987 is coupled to resistor 988 and inverter 990. The second terminal of transistor 987 is coupled to the second power supply terminal of constant slew rate driver circuit system 900, which supplies a common potential. The control terminal of transistor 987 is coupled to transistor 975 and resistor 984.

[0168] Resistor 988 has a first terminal and a second terminal. The first terminal of resistor 988 is coupled to a high-side voltage protection circuit system 610, which supplies an internal power supply voltage. The second terminal of resistor 988 is coupled to transistor 987 and inverter 990.

[0169] Inverter 990 has a first terminal, a second terminal, a third terminal, and a fourth terminal. The first terminal of inverter 990 (also referred to as the input terminal) is coupled to transistor 987 and resistor 988. The second terminal of inverter 990 (also referred to as the output terminal) is coupled to transistors 655 and 912 and inverter 993. The third terminal of inverter 990 is coupled to a high-side voltage protection circuit system 610, which supplies an internal power supply voltage. The fourth terminal of inverter 990 is coupled to a second power supply terminal of a constant slew rate driver circuit system 900, which supplies a common potential.

[0170] Inverter 993 has a first terminal, a second terminal, a third terminal, and a fourth terminal. The first terminal of inverter 993 (also referred to as the input terminal) is coupled to transistors 655 and 912 and inverter 990. The second terminal of inverter 993 (also referred to as the output terminal) is coupled to transistors 625 and 650 via level shifter circuit system 996. The third terminal of inverter 993 is coupled to high-side voltage protection circuit system 610, which supplies an internal power supply voltage. The fourth terminal of inverter 993 is coupled to the second power supply terminal of constant slew rate driver circuit system 900, which supplies a common potential.

[0171] The level shifter circuit system 996 has a first terminal and a second terminal. The first terminal of the level shifter circuit system 996 is coupled to an inverter 993. The second terminal of the level shifter circuit system 996 is coupled to transistors 625 and 650.

[0172] exist Figure 9A and 9B In the examples, transistors 655, 660, 670, 912, 915, 933, 951, 966, and 987 are n-channel MOSFETs. Alternatively, transistors 655, 660, 670, 912, 915, 933, 951, 966, and 987 can be n-channel FETs, n-channel IGBTs, n-channel JFETs, NPN BJTs, or p-type equivalents with slight modifications. Figure 9A and 9BIn the examples, transistors 605, 615, 650, 909, 939, 948, 963, and 975 are p-channel MOSFETs. Alternatively, transistors 605, 615, 650, 909, 939, 948, 963, and 975 can be p-channel FETs, p-channel IGBTs, p-channel JFETs, PNP BJTs, or N-type equivalent devices with slight modifications. Transistors 605, 615, 650, 655, 660, 670, 909, 912, 915, 933, 939, 948, 951, 963, 966, 975, and 987 can be depletion-mode devices, extended-drain devices, enhancement-mode devices, natural transistors, or other types of device structure transistors. Furthermore, transistors 605, 615, 650, 655, 660, 670, 909, 912, 915, 933, 939, 948, 951, 963, 966, 975, and 987 can be implemented on or over a silicon substrate (Si), a silicon carbide substrate (SiC), a gallium nitride substrate (GaN), or a gallium arsenide substrate (GaAs).

[0173] Figure 10 To indicate that it can be used Figure 6 , 9A and the low-side voltage protection circuit system 665, 903 or more generally 9B. Figure 6 , 9A A flowchart of an instance implementation of at least one of the constant rotational speed driver circuit systems 600 and 900 of 9B, including execution, instantiation, or ongoing instance operation 1000. Figure 10 Instance operation 1000 begins in progress Figure 8 Operation 800, wherein the high-side voltage protection circuit system 610, 705 controls the high-side transistor in response to the internal power supply voltage and the high-side protection voltage. (Operation 800).

[0174] Figure 9A The transistor 975 determines whether the output voltage is less than the negative threshold voltage (Box 1005). In the example operation, Figure 9A Resistor 972 sets the control terminal of transistor 975 to a voltage proportional to the output voltage at the output terminal of the constant slew rate driver circuit system 600, 900. In this type of operation, transistor 975 turns on in response to an output voltage approximately equal to a threshold voltage of transistor 975, which is less than the common potential of the second power supply terminals of the constant slew rate driver circuit system 600, 900.

[0175] If transistor 975 determines that the output voltage is greater than the negative threshold voltage (e.g., box 1005 returns a negative result), then Figure 9AInverters 990 and 993 set the low-side protection signal to logic low (Box 1010). In example operation, transistor 975 remains off in response to the output voltage being greater than the common potential minus the threshold voltage of transistor 975. In this type of example operation, Figure 9A The resistor 984 will Figure 9A The control terminal of transistor 987 is pulled to the internal power supply voltage from the high-side protection circuitry 610, 705. Transistor 987 is turned on in response to the pull-up control terminal of resistor 984, which allows transistor 987 to pull down the input terminal of inverter 990. Inverter 990 sets the inverting low-side protection signal to logic high in response to the pull-down input terminal of transistor 987. Inverter 993 sets the low-side protection signal to logic low in response to inverter 990 setting the inverting low-side protection signal to logic high. Advantageously, the low-side protection signal is logic low when the output voltage is greater than the common potential minus the threshold voltage.

[0176] If transistor 975 determines that the output voltage is less than the negative threshold voltage (e.g., the result returned by block 1005), then inverters 990 and 993 set the low-side protection signal to logic high (block 1015). In example operation, transistor 975 turns on in response to an output voltage greater than a threshold voltage of transistor 975, which is less than the common potential. In this type of example operation, transistor 975 pulls the control terminal of transistor 987 to the common potential. Transistor 987 turns off in response to transistor 975 pulling down the control terminal, which allows... Figure 9A Resistor 988 pulls up the input terminal of inverter 990. Inverter 990 sets the inverting low-side protection signal to logic low in response to the pull-up control terminal of resistor 988. Inverter 993 sets the low-side protection signal to logic high in response to inverter 990 setting the inverting low-side protection signal to logic low. Advantageously, the low-side protection signal is logic high when the output voltage is less than a threshold voltage of the common potential.

[0177] Inverters 990 and 993 disconnect the high-side control terminal and the low-side control terminal (Box 1020). In some instances, inverters 990 and 993 disconnect transistors 650 and 655 in response to an output voltage less than a threshold voltage of the common potential. In such instances, inverter 990 generates an inverted low-side protection signal with a logic low state, and inverter 993 generates a low-side protection signal with a logic high state. Transistor 650 disconnects in response to a low-side protection signal with a logic high state, and transistor 655 disconnects in response to an inverted high-side protection signal with a logic low state. Furthermore, in some instances, Figure 9AThe level shifter circuit system 996 shifts (e.g., offsets) the logic level of the low-side protection signal from a first logic level (e.g., zero to five volts) to a shifted logic level (e.g., protection supply voltage minus five volts to protection supply voltage). In such an example, the level shifter circuit system 996 uses the shifted logic level to control transistors 650 and 625.

[0178] Figure 6 , 7 Transistor 625 of 9B is pulled high to disable the high-side transistor (Box 1025). In some instances, a low-side protection signal from inverter 993 turns on transistor 625 in response to being in a logic high state. In some such instances, level shifter circuitry 996 shifts the logic level of the low-side protection signal to be relevant to the protection supply voltage, which ensures that transistor 625 is turned on. In example operation, transistor 625 prevents transistor 615 from turning on in response to setting the control terminal of transistor 615 to be equal to the protection supply voltage. Advantageously, low-side voltage protection circuitry 665, 903 disables transistor 615 in response to detecting an unsafe output voltage at the output terminal of constant rotation speed driver circuitry 600, 700, 900.

[0179] Figure 6 , 7 Transistor 680 of 9B pulls down the first low-side control terminal to disable the first low-side transistor (box 1030). In some instances, a low-side protection signal from inverter 993 turns on transistor 680 in response to being in a logic high state. In example operation, transistor 680 prevents transistor 670 from turning on in response to setting the control terminal of transistor 670 to equal the common potential. Advantageously, low-side voltage protection circuitry 665, 903 disables transistor 670 in response to detecting an unsafe output voltage. Control continues to return to box 1005.

[0180] Figure 9A Logic devices 918, 936, 954, and 969 determine whether the high-side protection is active (Box 1035). In an example operation, logic devices 918, 936, 954, and 969 receive an inverted high-side protection signal from high-side voltage protection circuitry 610 and 705, the inverted high-side protection signal being the logical inverse of the high-side protection signal. The inverted high-side protection signal indicates that the high-side protection is active as if it were logic zero. In this example operation, logic devices 918, 936, 954, and 969 are AND gates, and the inverted high-side protection signal remains in one state when the high-side protection is active. Furthermore, logic devices 918, 936, 954, and 969 generate an output following the data input signal in response to the inverted high-side protection signal indicating that the high-side protection is inactive.

[0181] If logic devices 918, 936, 954, and 969 determine that the high-side protection is active (e.g., the result returned by block 1035), then logic devices 918, 936, 954, and 969 disable the charge pump circuit system (block 1040). In example operation, when the high-side protection is active, the inverted high-side protection signal prevents the outputs of logic devices 918, 936, 954, and 969 from following the digital input signal. In this type of example operation, the outputs of logic devices 918, 936, 954, and 969 prevent... Figure 9A The switching of transistors 909, 915, 933, 939, 948, 951, 963, and 966 disables the charge boosting of capacitor 929 in Figure 9. In some instances, and as further described below, transistors 909, 915, 933, 939, 948, 951, 963, and 966 functionally implement a charge pump circuit system to boost the voltage across capacitor 929 to a voltage greater than the internal supply voltage. Advantageously, transistors 909, 915, 933, 939, 948, 951, 963, and 966 are disabled in response to high-side voltage protection circuit systems 610 and 705 to prevent unsafe voltage coupling to the common potential or the internal supply voltage. Control continues to return to block 1035.

[0182] If logic devices 918, 936, 954, and 969 determine that the high-side protection is inactive (e.g., block 1035 returns a negative result), then Figure 9A and 9B Diodes 615B, 660B, 909B, and 912B determine whether the protection supply voltage is less than the maximum negative voltage (Box 1045). When the supply voltage of the constant slew rate driver circuitry 600, 900 is set to a negative voltage, the voltage of the package substrate held at the common potential becomes the highest voltage in the constant slew rate driver circuitry 600, 900. For example, if the second power supply terminal or output terminal of the constant slew rate driver circuitry 600, 900 is set to a voltage greater than the supply voltage at the first power supply terminal, then the supply voltage of the constant slew rate driver circuitry 600, 900 is negative. During such instance operation, the negative voltage forward bias diodes 615B, 660B, 909B, and 912B prevent transistors 605, 615, 660, and 670 from being accurately controlled by the voltage protection circuitry 610, 665, 705, and 903.

[0183] If diodes 615B, 660B, 909B, and 912B determine that the protection supply voltage is less than the maximum negative voltage (e.g., the result returned by box 1045), then Figure 9AResistor 906 disconnects the second low-side transistor (box 1050). In example operation, when diodes 615B, 660B, 909B, and 912B are forward biased with an unsafe negative voltage, diodes 909B and 912B set the gate-source voltage of transistor 909 to approximately zero. In this type of example operation, diode 912B reverse biases diode 912A, which reduces the voltage drop across resistor 906 and sets the gate-source voltage of transistor 660 to approximately zero. Advantageously, resistor 906 deactivates transistor 660 in response to an unsafe negative voltage at the second power supply terminal or output terminal of the constant slew rate driver circuitry 600, 900. Control continues back to box 1045.

[0184] If diodes 615B, 660B, 909B, and 912B determine that the protection supply voltage is greater than the maximum negative voltage (e.g., box 1045 returns a negative result), then logic devices 918, 936, 954, and 969 determine whether the data is logic high (box 1055). In practical operation, when the inverting high-side protection signal is logic high, the outputs of logic devices 918, 936, 954, and 969 follow either the digital input signal or the inverted digital input signal.

[0185] If logic devices 936 and 969 determine that the digital input signal is logic high, and logic device 954 determines that the inverted digital input signal is logic low (e.g., the result returned by block 1055), then transistors 933 and 963 charge the capacitors of the charge pump circuit system to the internal power supply voltage (block 1060). In some instances, in response to transistor 951 turning off, Figure 9A Transistors 933 and 966 are turned on, and transistors 939 and 948 are turned off, which sets the voltage drop across resistor 942. In this type of operation, transistor 963 couples the first terminal of capacitor 929 to the internal power supply voltage in response to the voltage drop across resistor 960 generated by transistor 966. Furthermore, transistor 933 couples capacitor 929 to a common potential. In this example operation, transistors 933 and 963 charge capacitor 929 in response to a logic high digital input signal, so that it has a voltage approximately equal to the internal power supply voltage. Control then returns to operation 800.

[0186] If logic devices 936 and 969 determine that the digital input signal is not logic high, and logic device 954 determines that the inverted digital input signal is logic high (e.g., block 1055 returns a no result), then logic devices 936 and 969 determine whether the data is logic low (e.g., logic device 954 determines that the inverted data is logic high) (block 1065). In an example operation, when the inverted high-side protection signal is logic high, the outputs of logic devices 936, 954, and 969 follow either the digital input signal or the inverted digital input signal. If logic devices 936 and 969 determine that the digital input signal is not logic low, and logic device 954 determines that the inverted digital input signal is not logic high (e.g., block 1065 returns a no result), then control continues to return to operation 800.

[0187] If logic devices 936, 969 determine that the digital input signal is logic low and logic device 954 determines that the inverted digital input signal is logic high (e.g., the result returned by block 1065), then transistors 909, 939, 948, 951 turn on the second low-side transistor by increasing the voltage across the capacitor of the charge pump circuit system (block 1070). In an example operation, when the digital input signal is logic low and the inverted digital input signal is logic high, logic devices 936, 969 turn off transistors 933, 966. In this type of example operation, transistors 939, 948 turn on in response to a voltage drop across resistor 942 created by transistor 951. Transistors 939, 948 couple the second terminal of capacitor 929 to the internal power supply voltage, which sets the control terminal of transistor 660 to approximately twice the internal power supply voltage. This voltage boost across capacitor 929 responds to the existing potential across capacitor 929 from block 1055. Advantageously, although the output voltage is approximately equal to the internal supply voltage, the switching of transistors 933, 951, and 966 still allows the low-side voltage protection circuitry 665 and 903 to activate transistor 660. Control then returns to operation 800.

[0188] Although reference Figure 10 The flowcharts described herein are example methods, but implementations may also be used in this specification. Figure 6 , 9A And many other methods of the low-side voltage protection circuitry systems 665, 903 and 9B, or more generally, the constant rotation speed driver circuitry systems 600, 900. For example, the execution order of the blocks can be changed, or some of the blocks described can be changed, eliminated, or combined. Similarly, in the manufacturing process, additional operations may be included before, between, or after the blocks shown in the illustrated examples.

[0189] Figure 11 for Figure 6 and 7High-side voltage protection circuit systems 610, 705 or more generally Figure 1 , 6 Constant rotational speed drive circuit systems of 7, 9A and 9B 140, 600, 700 and 900 Figure 8 The instance operation 800's timing diagram 1100. Figure 11 In the example, timing diagram 1100 illustrates the instance power supply voltage 1105 (VCC), instance protection power supply voltage 1110 (VCC_PROT), instance internal power supply voltage 1115 (VCC_INT), and instance high-side protection signal 1120 (ENR_HS_PROT) over time.

[0190] Power supply voltage 1105 represents the voltage at the first power supply terminal of the constant rotation speed drive circuit systems 140, 600, 700, and 900. Protection power supply voltage 1110 represents the voltage at the protection power supply terminal of the high-side voltage protection circuit systems 610 and 705. Internal power supply voltage 1115 represents the voltage at the internal power supply terminal of the high-side voltage protection circuit systems 610 and 705. High-side protection signal 1120 indicates whether the high-side voltage protection circuit systems 610 and 705 actively protect the constant rotation speed drive circuit systems 600, 700, and 900 from unsafe voltages. Figure 7 In the example, the high-side voltage protection circuit systems 610 and 705 actively protect the constant rotation speed driver circuit systems 600, 700, and 900 in response to the high-side protection signal 1120 being equal to logic high (e.g., five volts).

[0191] At the first moment, at location 1125, Figure 1 Device 110 is powered on, and the power supply voltage 1105 begins to increase. This type of operation corresponds to the above. Figure 8 The operation of blocks 805 and 810. After the first time 1125, the protection power supply voltage 1110 and the internal power supply voltage 1115 respond to the positive bias of the power supply voltage 1105. Figure 6 , 7 And the number of diodes increases starting with the 605B and the 9B diode. This type of example operation corresponds to the above. Figure 8 Boxes 815 and 820. At the second time 1130, the high-side voltage protection circuit system 610 and 705 are activated. Figure 6 , 7 And transistor 605 of 9B, which regulates the protection supply voltage 1110 to approximately equal to the supply voltage 1105. This type of example operation corresponds to the above. Figure 8 Box 840. Furthermore, between the first time 1125 and the third time 1135, the high-side voltage protection circuit systems 610 and 705 perform... Figure 8The operations at frames 825, 830, and 835. After the third time point of 1135. Figure 6 , 7 The current source circuit system of 9B is driven by 630 and 685. Figure 6 , 7 The transistors 615 and 670 of 9B generate capacitances independent of those coupled to the output terminals (e.g., Figure 2 , 6 The output of the slewing rate of capacitors 280 and 695 (7 and 9B). Combined with... Figure 3 The 300 instructions and descriptions describe this type of instance operation.

[0192] At time 1140 (fourth time), the power supply voltage 1105, the protection power supply voltage 1110, and the internal power supply voltage 1115 begin to increase. In the example operation, shortly after time 1140, the power supply voltage 1105 is reduced to a high voltage (e.g., 20 volts). At time 1145 (fifth time), the protection power supply voltage 1110 increases to a value greater than [missing value]. Figure 8 The threshold voltage of frame 845. At time 1145, Figure 7 The transistor 745 is off and Figure 7 Transistor 750 is turned on, clamping the internal power supply voltage 1115 to approximately five volts. And, at time 1145, Figure 7 The inverters 760 and 765 set the high-side protection signal 1120 to logic high, which leads to... Figure 8 The operation of frames 855, 860, and 865. At the sixth time 1150, the power supply voltage 1105 and the protection power supply voltage 1110 stop increasing. At the seventh time 1155, the power supply voltage 1105 and the protection power supply voltage 1110 begin to decrease.

[0193] At the eighth time 1160, the power supply voltage 1105 and the protection power supply voltage 1110 become less than the threshold voltage of block 845. At the eighth time 1160, transistor 745 turns on and transistor 750 turns off, setting the internal power supply voltage 1115 to approximately equal to the protection power supply voltage 1110. Also at the eighth time 1160, inverters 760 and 765 set the high-side voltage protection signal 1120 to logic low, allowing current source circuit systems 630 and 685 to return to drive transistors 615 and 670. After the ninth time 1165, current source circuit systems 630 and 685 continue to drive transistors 615 and 670.

[0194] Figure 12 for Figure 1 , 6 Constant rotational speed drive circuit systems of 7, 9A and 9B 140, 600, 700 and 900 Figure 8 and10 The instance operation 800, 1000, and timing diagram 1200. In Figure 12 In this example, timing diagram 1200 illustrates the example power supply voltage 1210 (VCC), the example output voltage 1220 (VOUT), and the example low-side control voltage 1230. Power supply voltage 1210 represents the voltage at the first power supply terminal of the constant rotational speed driver circuit systems 140, 600, 700, and 900. Output voltage 1220 represents the voltage at the output terminals of the constant rotational speed driver circuit systems 140, 600, and 700. Low-side control voltage 1230 represents... Figure 6 , 7 The voltage at the control terminal of transistor 660 of 9B.

[0195] At the first time point 1240, the power supply voltage 1210, output voltage 1220, and low-side control voltage 1230 begin to increase. Between the first time point 1240 and the second time point 1250, the power supply voltage 1210, output voltage 1220, and low-side control voltage 1230 increase by more than [amount missing]. Figure 8 The threshold voltage of block 845. During operation of this type of instance, the high-side voltage protection circuit system 610, 705 sets a high-side voltage protection signal (e.g., Figure 11 The high-side voltage protection signal 1120), and clamp the internal power supply voltage (e.g., Figure 11 The internal power supply voltage is 1115. The reverse high-side protection signal is disconnected. Figure 9A Transistors 915, 933, 951, and 966 allow resistor 906 to disconnect transistor 660. Advantageously, the low-side control voltage 1230 can be coupled to a relatively high voltage without turning on transistor 660.

[0196] Between the second time 1250 and the third time 1260, the constant slew rate driver circuitry systems 140, 600, 700, and 900 return to normal operation. At the third time 1260, the supply voltage 1210, output voltage 1220, and low-side control voltage 1230 decrease to voltages below a threshold value, which is below the common potential (e.g., 0V). During this type of operation, the low-side voltage protection circuitry systems 665 and 903 set a low-side protection signal to perform... Figure 10 Operation of boxes 1015, 1020, 1025, and 1030. After the fourth time 1270, the constant rotation speed driver circuitry 140, 600, 700, and 900 returns to normal operation.

[0197] At time 1280, during normal operation of the constant slew rate driver circuit systems 140, 600, 700, and 900, the output voltage 1220 has a falling edge. During this type of operation, transistor 615 begins to turn off, and transistors 660 and 670 turn on. However, when the output voltage 1220 is approximately equal to the internal supply voltage (e.g., ...), ... Figure 11 When the internal power supply voltage is 1115, the low-side control voltage 1230 needs to be increased to turn on transistor 660. At the fifth time 1280, Figure 9A Transistors 909, 915, 933, 951, 966, and 963 have increased in power. Figure 9A The voltage across capacitor 929 is increased to raise the low-side control voltage 1230 to a level sufficient to turn on transistor 660. This type of operation corresponds to... Figure 10 The block 1070 responds to the transition of the digital input signal from logic high to logic zero. Advantageously, increasing the voltage across capacitor 929 makes transistor 660 a p-channel transistor.

[0198] "Including" and "comprises" (and all their forms and tenses) are used herein as open-ended terms. Therefore, whenever a technical solution uses any form of "including" or "comprises" (e.g., includes, encompassing, including, having, etc.) as a preposition or within any type of technical solution citation, additional elements, terms, etc., may exist without exceeding the scope of the corresponding technical solution or citation. As used herein, the phrase "at least" is open-ended when used as a transitional term, for example, in a technical solution preposition, in the same way as the terms "including" and "comprises". The term "and / or" when used in the form of, for example, A, B, and / or C, refers to any combination or subset of A, B, and C, such as (1) only A, (2) only B, (3) only C, (4) A and B, (5) A and C, (6) B and C, or (7) A and B and C. As used herein in the context of describing structures, components, projects, objects, and / or things, the phrase “at least one of A or B” means an implementation comprising any one of the following: (1) at least one A, (2) at least one B, or (3) at least one A and at least one B. Similarly, as used herein in the context of describing structures, components, projects, objects, and things, the phrase “at least one of A or B” means an implementation comprising any one of the following: (1) at least one A, (2) at least one B, or (3) at least one A and at least one B. As used herein in the context of describing the execution or performance of processes, instructions, actions, activities, etc., the phrase “at least one of A or B” means an implementation comprising any one of the following: (1) at least one A, (2) at least one B, or (3) at least one A and at least one B. Similarly, as used herein in the context of describing the performance or execution of processes, instructions, actions, activities, etc., the phrase “at least one of A or B” means an implementation comprising any one of the following: (1) at least one A, (2) at least one B, or (3) at least one A and at least one B.

[0199] As used herein, singular references (e.g., "a(a)", "an(an)", "first", "second", etc.) do not exclude plurals. As used herein, the term "a(a)" or "an(an)" refers to one or more of the objects. The terms "a" (or "an"), "one or more", and "at least one" are used interchangeably herein. Furthermore, although listed separately, multiple components, elements, or actions may be implemented by, for example, the same entity or object. Additionally, while individual features may be included in different instances or solutions, these features may be combined, and inclusion in different instances or solutions does not imply that the combination of features is infeasible or disadvantageous at least one of them.

[0200] As used herein, unless otherwise stated, the term "above" describes the relationship of two parts relative to the earth. The first part is above the second part if at least one portion of the second part lies between the earth and the first part. Similarly, as used herein, the first part is "below" the second part when the first part is closer to the earth than the second part. As mentioned above, the first part may be above or below the second part, having one or more of the following conditions: there are other parts between them; there are no other parts between them; the first and second parts are in contact; or the first and second parts are not in direct contact with each other.

[0201] As used herein, a statement that any part (e.g., layer, film, region, area, or plate) is located on another part in any manner (e.g., located on it, positioned on it, placed on it, or formed on it, etc.) indicates that the referenced part is in contact with said other part, or that the referenced part is above said other part, with one or more intermediate parts positioned therebetween.

[0202] As used herein, unless otherwise indicated, a connection reference (e.g., fitting, coupling, joining, and bonding) may include an intermediate member between elements referenced by at least one of the connection references or relative movements between those elements. Thus, a connection reference does not necessarily imply that two elements are directly connected or fixed to each other. As used herein, the statement that any part is "in contact" with another part is defined to mean that there is no intermediate part between the two parts.

[0203] Unless otherwise specifically stated, descriptive terms such as “first,” “second,” and “third” are used herein without intending or otherwise indicating priority, physical order, arrangement, or any sorting in the list, but only as markers or at least one of any names to distinguish elements in order to facilitate understanding of the described instance. In some instances, the descriptive term “first” may be used to refer to an element in a particular embodiment, while the same element may be referred to in the claims by different descriptive terms such as “second” or “third.” In such cases, such descriptive terms are used only to clearly identify those elements within the context of the discussion (e.g., within the technical solution), where elements may otherwise share the same name.

[0204] As used herein, “approximately” and “about” modify their subject / value to identify the potential for variation in real-world applications. For example, “approximately” and “about” may modify dimensions that may be imprecise due to at least one of manufacturing tolerances or other real-world defects. For instance, unless otherwise specified herein, “approximately” and “about” may indicate that such dimensions are within a tolerance of + / - 10%.

[0205] As used in this article, "substantially real-time" means that, given the recognition of potential delays in computation time, transmission, and other factors in the real world, it occurs in a near-instantaneous manner. Therefore, unless otherwise specified, "substantially real-time" means real-time plus 1 second.

[0206] As used herein, the phrase “communication” includes its variations, encompassing one or a combination of direct communication or indirect communication through one or more intermediate components, and does not require direct physical (e.g., wired) communication or constant communication, but also includes selective communication carried out at at least one of periodic intervals, predetermined intervals, non-periodic intervals or one-off events.

[0207] As used herein, a “programmable circuit system” is defined as comprising at least one of the following: (i) one or more special-purpose circuits (e.g., special-purpose circuits (ASICs)) configured to perform a particular operation and comprising one or more semiconductor-based logic devices (e.g., electrical hardware implemented by one or more transistors), or (ii) one or more general-purpose semiconductor-based circuits programmable by instructions to perform one or more particular functions or operations and comprising one or more semiconductor-based logic devices (e.g., electrical hardware implemented by one or more transistors). Examples of programmable circuit systems include programmable microprocessors, such as: a central processing unit (CPU) that can execute a first instruction to perform one or more operations or functions; a field-programmable gate array (FPGA) that can be programmed with a second instruction to configure or structure at least one of the FPGAs, thereby instantiating one or more operations or functions corresponding to the first instruction; a graphics processing unit (GPU) that can execute the first instruction to perform one or more operations or functions; a digital signal processor (DSP) that can execute the first instruction to perform one or more operations or functions; an XPU; a network processing unit (NPU); one or more microcontrollers that can execute the first instruction to perform one or more operations or functions; or an integrated circuit, such as an application-specific integrated circuit (ASIC). For example, an XPU can be implemented by a heterogeneous computing system that includes various types of programmable circuit systems (e.g., one or more FPGAs, one or more CPUs, one or more GPUs, one or more NPUs, one or more DSPs, etc., and any combination thereof) and configuration technologies (e.g., application programming interfaces (APIs)) that can distribute computing tasks to any or more of the various types of programmable circuit systems that are suitable for and can be used to perform computing tasks.

[0208] As used herein, an integrated circuit / circuit system is defined as one or more semiconductor packages containing one or more circuit elements, such as transistors, capacitors, inductors, resistors, current paths, diodes, etc. For example, an integrated circuit can be implemented as one or more of an ASIC, FPGA, chip, microchip, programmable circuit system, semiconductor substrate coupling multiple circuit elements, system-on-a-chip (SoC), etc.

[0209] In this specification, the term "coupled" may encompass a connection, communication, or signal path that achieves a functional relationship consistent with this description. For example, if device A generates a signal to control device B to perform an action, then: (a) in a first instance, device A is coupled to device B via a direct connection; or (b) in a second instance, device A is coupled to device B via an intermediate component C, provided that the intermediate component C does not alter the functional relationship between device A and device B such that device B is controlled by device A via a control signal generated by device A.

[0210] A device “configured” to perform a task or function may be configured (e.g., programmed and / or hardwired at least one of) to perform at least one of the functions during manufacturing by the manufacturer, and / or may be configured (or reconfigurable) by the user after manufacturing to perform the function and other additional or alternative functions. The configuration may be performed by at least one of the device’s firmware or software programming, by at least one of the construction or layout of the device’s hardware components and interconnects, or by a combination thereof.

[0211] As used herein, the terms “terminal,” “node,” “interconnect,” “pin,” and “lead” are used interchangeably. Unless otherwise specified, these terms are generally used to refer to interconnects or terminals between device elements, circuit elements, integrated circuits, devices, or other electronic or semiconductor components.

[0212] In this specification and claims, the described "circuit system" may include one or more circuits. A circuit or device described herein as including certain components may conversely be adapted to couple to components used to form the described circuit system or device. For example, a structure described as including one or more semiconductor elements (e.g., transistors), one or more passive elements (e.g., one or a combination of resistors, capacitors, or inductors), or one or more sources (e.g., voltage sources and / or current sources) may alternatively include only semiconductor elements within a single physical device (e.g., at least one of a semiconductor die or integrated circuit (IC) package) and may be adapted to couple to at least some of the passive elements or sources during or after manufacturing, for example, by at least one of an end user or a third party, to form the described structure.

[0213] The circuits described herein can be reconfigured to include replacement components to provide functionality at least partially similar to that available before the component replacement. Unless otherwise stated, a component shown as a resistor generally represents any one or more elements coupled in at least one of series or parallel to provide the amount of impedance represented by the illustrated resistor. For example, a resistor or capacitor shown and described herein as a single component may alternatively be multiple resistors or capacitors coupled in parallel between the same nodes. For instance, a resistor or capacitor shown and described herein as a single component may actually be multiple resistors or capacitors coupled in series between the same two nodes as the single resistor or capacitor. While some elements of the described examples are included in the integrated circuit and others are outside the integrated circuit, in other exemplary embodiments, additional or fewer features may be incorporated into the integrated circuit. Additionally, some or all of the features described as outside the integrated circuit may be included in the integrated circuit, and some features described as inside the integrated circuit may be incorporated outside the integrated circuit. As used herein, the term "integrated circuit" means one or more circuits that are at least one of the following: (i) incorporated in / above a semiconductor substrate; (ii) incorporated in a single semiconductor package; (iii) incorporated in the same module; or (iv) incorporated in / on the same printed circuit board.

[0214] The use of the phrase “ground” in the foregoing description includes at least one of chassis ground, ground wire ground, floating ground, virtual ground, digital ground, common ground, or any other form of grounding applicable to or suited to the teachings of this specification. Unless otherwise stated, “about,” “approximately,” or “substantially” preceding a value indicates + / - 10% of the value, or, if the value is zero, a reasonable range of values ​​near zero.

[0215] Modifications to the described embodiments are possible within the scope of the claims, and other embodiments are also possible.

Claims

1. An apparatus comprising: A current source circuit system having a first terminal and a second terminal; A current absorber circuit system having a first terminal and a second terminal; A first transistor has a first terminal, a second terminal, and a control terminal, wherein the first terminal of the first transistor is coupled to the first terminal of the current source circuit system. The second transistor has a first terminal, a second terminal and a control terminal, wherein the first terminal of the second transistor is coupled to the first terminal of the current sink circuit system; and A capacitor having a first terminal and a second terminal, the first terminal of the capacitor being coupled to the second terminal of the first transistor and the second terminal of the second transistor, the second terminal of the capacitor being coupled to the second terminal of the current source circuit system, the second terminal of the current absorber circuit system, the control terminal of the first transistor, and the control terminal of the second transistor.

2. The device according to claim 1, further comprising: The third transistor has a first terminal and a second terminal; and A fourth transistor having a first terminal and a second terminal, the first terminal of the fourth transistor being coupled to the second terminal of the current source circuit system, the control terminal of the first transistor, and the first terminal of the third transistor, the second terminal of the fourth transistor being coupled to the second terminal of the current absorber circuit system, the control terminal of the second transistor, the second terminal of the third transistor, and the second terminal of the capacitor.

3. The device of claim 2, wherein the capacitor is a first capacitor, the third transistor further has a control terminal, and the device further comprises: A second capacitor has a first terminal and a second terminal, wherein the first terminal of the second capacitor is coupled to the second terminal of the first transistor, the second terminal of the second transistor and the first terminal of the first transistor; and A fifth transistor has a first terminal, a second terminal, and a control terminal. The first terminal of the fifth transistor is coupled to the first terminal of the current source circuit system and the first terminal of the first transistor. The second terminal of the fifth transistor is coupled to the second terminal of the current source circuit system, the control terminal of the first transistor, the first terminal of the third transistor, the control terminal of the fourth transistor, and the second terminal of the second capacitor. The control terminal of the fifth transistor is coupled to the control terminal of the third transistor.

4. The device of claim 2, wherein the third transistor further has a control terminal, and the device further comprises: A Zener diode having a first terminal and a second terminal; and A fifth transistor has a first terminal, a second terminal, and a control terminal. The first terminal of the fifth transistor is coupled to the first terminal of the current sink circuit system, the first terminal of the second transistor, and the first terminal of the Zener diode. The second terminal of the fifth transistor is coupled to the second terminal of the current sink circuit system, the control terminal of the second transistor, the second terminal of the capacitor, and the second terminal of the Zener diode. The control terminal of the fifth transistor is coupled to the control terminal of the third transistor.

5. The device according to claim 1, further comprising: A first resistor having a first terminal and a second terminal; A third transistor has a first terminal and a control terminal, the first terminal of the third transistor being coupled to the first terminal of the current source circuit system, the first terminal of the first transistor and the first terminal of the first resistor, and the control terminal of the third transistor being coupled to the second terminal of the first resistor. The second resistor has a first terminal and a second terminal; and A fourth transistor having a first terminal, a second terminal, and a control terminal, wherein the first terminal of the fourth transistor is coupled to the second terminal of the first transistor, the first terminal of the capacitor, and the first terminal of the second resistor; the second terminal of the fourth transistor is coupled to the second terminal of the second transistor; and the control terminal of the fourth transistor is coupled to the second terminal of the second resistor.

6. The device according to claim 5, further comprising: A clamping circuit system having a first terminal and a second terminal, wherein the first terminal of the clamping circuit system is coupled to the first terminal of the current sink circuit system and the first terminal of the second transistor; A fifth transistor has a first terminal, a second terminal, and a control terminal. The first terminal of the fifth transistor is coupled to the first terminal of the current source circuit system, the first terminal of the first resistor, the first terminal of the first resistor, and the first terminal of the third transistor. The control terminal of the fifth transistor is coupled to the second terminal of the clamping circuit system. A third resistor having a first terminal and a second terminal, wherein the first terminal of the third resistor is coupled to the second terminal of the fifth transistor; An inverter having a first terminal and a second terminal, wherein the first terminal of the inverter is coupled to the second terminal of the third resistor; and A sixth transistor having a first terminal and a control terminal, the first terminal of the sixth transistor being coupled to the second terminal of the first resistor and the control terminal of the third transistor, the control terminal of the sixth transistor being coupled to the second terminal of the inverter.

7. The device according to claim 5, further comprising: A charge pump circuit system having a first terminal and a second terminal, the first terminal of the charge pump circuit system being coupled to the second terminal of the second resistor and the control terminal of the fourth transistor; A third resistor has a first terminal and a second terminal, wherein the first terminal of the third resistor is coupled to the second terminal of the first transistor, the first terminal of the fourth transistor, and the first terminal of the capacitor; A fifth transistor having a first terminal and a control terminal, wherein the control terminal of the fifth transistor is coupled to the second terminal of the third resistor; A sixth transistor having a first terminal and a control terminal, wherein the control terminal of the sixth transistor is coupled to the first terminal of the fifth transistor; and An inverter having a first terminal and a second terminal, the first terminal of the inverter being coupled to the first terminal of the sixth transistor, and the second terminal of the inverter being coupled to the second terminal of the charge pump circuit system.

8. An apparatus comprising: The first transistor has a first terminal and a control terminal; The second transistor has a first terminal, a second terminal, and a control terminal, wherein the first terminal of the second transistor is coupled to the first terminal of the first transistor and the control terminal of the first transistor; A first capacitor has a first terminal and a second terminal; The second capacitor has a first terminal and a second terminal; A third transistor has a first terminal, a second terminal, and a control terminal, wherein the first terminal of the third transistor is coupled to the second terminal of the second transistor, the first terminal of the first capacitor, the first terminal of the second capacitor, and the control terminal of the third transistor. A fourth transistor having a first terminal and a control terminal, wherein the first terminal of the fourth transistor is coupled to the second terminal of the third transistor; The fifth transistor has a first terminal and a second terminal; and A sixth transistor having a first terminal and a second terminal, the first terminal of the sixth transistor being coupled to the control terminal of the second transistor, the second terminal of the first capacitor and the first terminal of the fifth transistor, the second terminal of the sixth transistor being coupled to the second terminal of the second capacitor, the control terminal of the fourth transistor and the second terminal of the fifth transistor.

9. The device of claim 8, wherein the fourth transistor further has a second terminal, and the device further comprises: A first current source circuit system has a first terminal and a second terminal. The first terminal of the first current source circuit system is coupled to the first terminal of the first transistor and the first terminal of the second transistor. The second terminal of the first current source circuit system is coupled to the control terminal of the second transistor, the second terminal of the first capacitor, the first terminal of the fifth transistor, and the first terminal of the sixth transistor. and A second current source circuit system has a first terminal and a second terminal, wherein the first terminal of the second current source circuit system is coupled to the second terminal of the second capacitor, the control terminal of the fourth transistor, the second terminal of the fifth transistor and the second terminal of the sixth transistor, and the second terminal of the second current source circuit system is coupled to the second terminal of the fourth transistor.

10. The device of claim 8, wherein the fourth transistor further has a second terminal, the fifth transistor further has a control terminal, and the device further comprises: A seventh transistor having a first terminal, a second terminal, and a control terminal, wherein the first terminal of the seventh transistor is coupled to the first terminal of the first transistor and the first terminal of the second transistor, and the second terminal of the seventh transistor is coupled to the control terminal of the second transistor, the second terminal of the first capacitor, the first terminal of the fifth transistor, and the first terminal of the sixth transistor; and An eighth transistor has a first terminal, a second terminal, and a control terminal. The first terminal of the eighth transistor is coupled to the second terminal of the second capacitor, the control terminal of the fourth transistor, the second terminal of the fifth transistor, and the second terminal of the sixth transistor. The second terminal of the eighth transistor is coupled to the second terminal of the fourth transistor. The control terminal of the eighth transistor is coupled to the control terminal of the fifth transistor and the control terminal of the seventh transistor.

11. The device according to claim 8, further comprising: A first resistor having a first terminal and a second terminal; Clamping circuit system, which has terminals; A seventh transistor having a first terminal, a second terminal, and a control terminal, wherein the first terminal of the seventh transistor is coupled to the first terminal of the first transistor, the first terminal of the second transistor, and the first terminal of the first resistor, and the control terminal of the seventh transistor is coupled to the terminal of the clamping circuit system; A second resistor having a first terminal and a second terminal, wherein the first terminal of the second resistor is coupled to the second terminal of the seventh transistor; An inverter having a first terminal and a second terminal, wherein the first terminal of the inverter is coupled to the second terminal of a second resistor; and An eighth transistor having a first terminal and a control terminal, the first terminal of the eighth transistor being coupled to the second terminal of the first resistor and the control terminal of the first transistor, and the control terminal of the eighth transistor being coupled to the second terminal of the inverter.

12. The device of claim 11, wherein the fifth transistor further has a control terminal, the sixth transistor further has a control terminal, the inverter is a first inverter, and the device further includes a second inverter having a first terminal and a second terminal, the first terminal of the second inverter being coupled to the second terminal of the first inverter, the control terminal of the sixth transistor and the control terminal of the eighth transistor, and the second terminal of the second inverter being coupled to the control terminal of the fifth transistor.

13. The device according to claim 8, further comprising: A first resistor having a first terminal and a second terminal; A charge pump circuit system having a first terminal and a second terminal, wherein the first terminal of the charge pump circuit system is coupled to the second terminal of the first resistor and the control terminal of the third transistor; The second resistor has a first terminal and a second terminal, the first terminal of the second resistor being coupled to the second terminal of the second transistor, the first terminal of the first capacitor, the first terminal of the second capacitor, the first terminal of the third transistor, and the first terminal of the first resistor. A seventh transistor having a first terminal and a control terminal, wherein the control terminal of the seventh transistor is coupled to the second terminal of the second resistor; An eighth transistor having a first terminal and a control terminal, wherein the control terminal of the eighth transistor is coupled to the first terminal of the seventh transistor; and An inverter having a first terminal and a second terminal, the first terminal of the inverter being coupled to the first terminal of the eighth transistor, and the second terminal of the inverter being coupled to the second terminal of the charge pump circuit system.

14. The device of claim 13, wherein the fifth transistor further has a control terminal, the sixth transistor further has a control terminal, the inverter is a first inverter, and the device further includes a second inverter having a first terminal and a second terminal, the first terminal of the second inverter being coupled to the control terminal of the sixth transistor, the second terminal of the first inverter and the second terminal of the charge pump circuit system, and the second terminal of the second inverter being coupled to the control terminal of the fifth transistor.

15. An apparatus comprising: The first transistor has a first terminal and a control terminal; The second transistor has a first terminal and a control terminal; A first capacitor has a first terminal and a second terminal; A second capacitor has a first terminal and a second terminal, wherein the first terminal of the second capacitor is coupled to the first terminal of the first transistor, the first terminal of the second transistor and the first terminal of the first capacitor; The first current source circuit system has terminals; The second current source circuit system has terminals; The third transistor has a first terminal and a second terminal; and A fourth transistor having a first terminal and a second terminal, the first terminal of the fourth transistor being coupled to the control terminal of the first transistor, the second terminal of the first capacitor, the terminal of the first current source circuit system, and the first terminal of the third transistor, and the second terminal of the fourth transistor being coupled to the control terminal of the second transistor, the second terminal of the second capacitor, the terminal of the second current source circuit system, and the second terminal of the third transistor.

16. The device of claim 15, wherein the first transistor further has a second terminal, the terminal of the first current source circuit system is a first terminal, the first current source circuit system further has a second terminal, the third transistor further has a control terminal, and the device further comprises: A Zener diode having a first terminal and a second terminal; and A fifth transistor has a first terminal, a second terminal, and a control terminal. The first terminal of the fifth transistor is coupled to the second terminal of the first current source circuit system, the second terminal of the first transistor, and the first terminal of the Zener diode. The second terminal of the fifth transistor is coupled to the control terminal of the first transistor, the second terminal of the first capacitor, the first terminal of the first current source circuit system, the first terminal of the third transistor, the first terminal of the fourth transistor, and the second terminal of the Zener diode. The control terminal of the fifth transistor is coupled to the control terminal of the third transistor.

17. The device of claim 15, wherein the second transistor further has a second terminal, the terminal of the second current source circuit system is a first terminal, the second current source circuit system further has a second terminal, the third transistor further has a control terminal, and the device further comprises: A Zener diode having a first terminal and a second terminal; and A fifth transistor has a first terminal, a second terminal, and a control terminal. The first terminal of the fifth transistor is coupled to the second terminal of the second current source circuit system, the second terminal of the second transistor, and the first terminal of the Zener diode. The second terminal of the fifth transistor is coupled to the control terminal of the second transistor, the second terminal of the second capacitor, the first terminal of the second current source circuit system, the second terminal of the third transistor, the second terminal of the fourth transistor, and the second terminal of the Zener diode. The control terminal of the fifth transistor is coupled to the control terminal of the third transistor.

18. The device of claim 15, wherein the first transistor further has a second terminal, the terminal of the first current source circuit system is a first terminal, the first current source circuit system further has a second terminal, and the device further comprises: A resistor having a first terminal and a second terminal; A fifth transistor having a first terminal and a control terminal, the first terminal of the fifth transistor being coupled to the second terminal of the first transistor, the second terminal of the first current source circuit system and the first terminal of the resistor, and the control terminal of the fifth transistor being coupled to the second terminal of the resistor; and A sixth transistor having a first terminal and a second terminal, the first terminal of the sixth transistor being coupled to the first terminal of the first transistor, the first terminal of the first capacitor and the first terminal of the first capacitor, and the second terminal of the sixth transistor being coupled to the first terminal of the second transistor.

19. The device of claim 18, wherein the resistor is a first resistor, the device further comprising: Clamping circuit system, which has terminals; A seventh transistor having a first terminal, a second terminal, and a control terminal, wherein the first terminal of the seventh transistor is coupled to the second terminal of the first transistor, the first terminal of the fifth transistor, and the first terminal of the first resistor, and the control terminal of the seventh transistor is coupled to the terminal of the clamping circuit system; A second resistor having a first terminal and a second terminal, wherein the first terminal of the second resistor is coupled to the second terminal of the seventh transistor; An inverter having a first terminal and a second terminal, wherein the first terminal of the inverter is coupled to the second terminal of a second resistor; and An eighth transistor having a first terminal and a control terminal, the first terminal of the eighth transistor being coupled to the second terminal of the first resistor and the control terminal of the fifth transistor, the control terminal of the eighth transistor being coupled to the second terminal of the inverter.

20. The device of claim 18, wherein the resistor is a first resistor, and the device further comprises: The second resistor has a first terminal and a second terminal; A charge pump circuit system having a first terminal and a second terminal, wherein the first terminal of the charge pump circuit system is coupled to the second terminal of the second resistor and the control terminal of the sixth transistor; A third resistor has a first terminal and a second terminal, wherein the first terminal of the third resistor is coupled to the first terminal of the first transistor, the first terminal of the first capacitor, the first terminal of the second capacitor, the first terminal of the sixth transistor, and the first terminal of the second resistor; A seventh transistor having a first terminal and a control terminal, wherein the control terminal of the seventh transistor is coupled to the second terminal of the third resistor; An eighth transistor having a first terminal and a control terminal, wherein the control terminal of the eighth transistor is coupled to the first terminal of the seventh transistor; and An inverter having a first terminal and a second terminal, the first terminal of the inverter being coupled to the first terminal of the eighth transistor, and the second terminal of the inverter being coupled to the second terminal of the charge pump circuit system.

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