Base

Abstract

Described herein are susceptors, processing chambers having the susceptors, and methods of processing substrates using the susceptors. In one example, a susceptor for supporting a substrate during processing is provided. The base has a disc-shaped body that includes a side surrounding an interior region. The interior region is recessed to form a recessed pocket configured to receive a substrate. A plurality of bumps extends radially into the interior region, the bumps configured to contact an outer edge of the substrate when the substrate is disposed in the recessed pocket. A vent region is defined within the interior region. The vent region is defined by a plurality of vent holes formed through the body. The vent region terminates at a radius from a centerline of the body that is at least 4.0 mm less than a radius of an inner wall defining the edge.

Description

Technical Field

[0001] The embodiments described herein generally relate to a base for use in semiconductor processing equipment, as well as related methods and processing chambers using the base. Background Technology

[0002] In integrated circuit manufacturing, deposition processes are used to deposit films of various materials onto semiconductor substrates. Epitaxy is a deposition process that grows thin, ultrapure layers (typically silicon or germanium) on the surface of a substrate. Forming an epitaxial layer with a uniform thickness across the substrate surface involves precise temperature control.

[0003] The substrate supporting the substrate during epitaxial deposition typically affects the quality and / or uniformity of the deposited film. Changes in the process formulation and / or the materials to be deposited can often render a substrate that was previously able to deposit films with acceptable quality and / or uniformity unacceptable.

[0004] Therefore, there is a need for improvements to the base, the method, and the processing chamber having the base. Summary of the Invention

[0005] This document describes a base, a method, and a processing chamber having the base. In one example, a base is provided for supporting a substrate during processing. The base has a disc-shaped body including an edge surrounding an inner region. The inner region is recessed relative to the edge to form a recessed cavity configured to receive the substrate. A plurality of bumps extend radially into the inner region, the bumps being configured to contact an outer edge of the substrate when the substrate is positioned in the recessed cavity. A venting region is defined within the inner region. The venting region is defined by a plurality of vent holes formed through the body. The venting region terminates at a radius originating from a centerline of the body.

[0006] In some examples, the ventilation area is at least 4.0 mm smaller than the radius of the inner wall of the defining edge.

[0007] In another example, a base includes a disc-shaped body having a first side and a second side. A centerline of the body extends forward through the first and second sides. The body includes an edge surrounding an inner region. The edge has an inner diameter wall defined at a first radius relative to the centerline. The inner region is surrounded by the inner diameter wall of the edge and is recessed on the first side relative to the edge to form a recessed cavity, the recessed cavity being configured to receive a substrate. A plurality of bumps extend radially from the inner diameter of the edge to the inner region. The bumps are configured to contact the outer edge of the substrate when the substrate is disposed in the recessed cavity. A venting region is defined within the inner region. The venting region is defined by a plurality of vent holes formed through the body. The venting region terminates at a radius originating from the centerline of the body, the radius of which is at least 4.0 mm smaller than the radius of the inner wall defining the edge. The plurality of vent holes are at least 2 mm away from the plurality of bumps. A plurality of lifting rod holes are formed through the inner region. The diameter of the lifting rod holes is larger than the diameter of the vent holes. The top surface of the recessed region has a pattern of substrate support pillars separated by a plurality of venting channels. Multiple vents on the top surface lead to multiple ventilation channels.

[0008] In some examples, the non-ventilated area is defined within the interior area and surrounds the ventilated area. The non-ventilated area has no openings.

[0009] In one example, a base is provided for supporting a substrate during processing. The base has a disc-shaped body. The body has a boundary ring and a roll disposed within the boundary ring. The roll has a top surface coupled to an inner diameter wall of the boundary ring. The roll has a bottom surface coupled to a bottom surface of the boundary ring. The roll has a top surface recessed below the top surface of the boundary ring. The roll further includes a plurality of holes formed therethrough and a plurality of substrate support posts extending a distance from the top surface of the roll, terminating below the top surface of the boundary ring.

[0010] In some examples, the substrate support pillars of the base form a planar substrate support surface. The distal ends of the substrate support pillars may be configured to reduce the contact area with the substrate. For example, the distal ends of the substrate support pillars may be curved, have an edge radius or chamfer, be fully circular, be dome-shaped, or have another suitable geometry.

[0011] In some examples, the substrate supported on the base is supported only by substrate support pillars.

[0012] In some examples, the base support column has a length sufficient to form an air chamber between the substrate disposed on the base support column and the top surface of the roll.

[0013] In some examples, the base support posts are arranged in an X / Y grid. In other examples, the base support posts are radially aligned and / or form concentric loops. The density of the base support posts can vary throughout the roll to create areas with more support posts compared to other areas, such as the center of the roll compared to its edges. Some base support posts may have different cross-sectional areas.

[0014] In some examples, multiple holes formed through the roll are arranged in an X / Y grid. In other examples, the holes are radially aligned and / or form concentric loops. The hole density and / or opening area can vary throughout the roll to create areas with more holes and / or openings compared to other areas, such as the center of the roll compared to its edges. Some holes may have different cross-sectional areas. Furthermore, while the holes should have a circular cross-section, the cross-sectional profile of the holes may not be circular.

[0015] In another example, the base includes a plurality of substrate centering bumps coupled to the inner diameter wall of the boundary ring.

[0016] In another example, a processing chamber is provided, the processing chamber including a chamber having a base disposed in a processing volume. The base is configured as described herein.

[0017] In another example, a method for processing a substrate is provided, including heating the substrate supported on a base in a processing chamber, and forming a film on the substrate while in the processing chamber. The base may be configured as described herein. Attached Figure Description

[0018] To gain a detailed understanding of the features described above, reference can be made to embodiments for a more specific description of the invention, some of which are shown in the accompanying drawings. However, it should be noted that the drawings only illustrate typical embodiments of the invention and should not be construed as limiting its scope, as other equivalent embodiments are permissible.

[0019] Figure 1 This is a partial schematic side cross-sectional view of the processing chamber with a base.

[0020] Figure 2A It is possible Figure 1 An isometric view of an example of a base used in a processing chamber.

[0021] Figure 2B yes Figure 2A A partial cross-sectional side view of the base shown.

[0022] Figure 2C yes Figure 2A A partial top view of the base shown.

[0023] Figure 3A yes Figure 2A A partial cross-sectional side view of the base shown.

[0024] Figure 3B yes Figure 3A A partial top view of the base shown.

[0025] Figure 3C yes Figure 3A A partial cross-sectional side view of the base shown.

[0026] Figure 4 It is possible Figure 1 A partial cross-sectional side view of another example of a base used in a processing chamber.

[0027] Figure 5A It is possible Figure 1 A partial cross-sectional side view of another example of a base used in a processing chamber.

[0028] Figure 5B yes Figure 5A A partial top view of the base shown.

[0029] Figures 6A-6C It is possible Figure 1 Cross-sectional views of various examples of substrate support pillars of the base used in the processing chamber.

[0030] In this disclosure, the terms “top,” “bottom,” “side,” “above,” “below,” “up,” “down,” “upward,” “downward,” “horizontal,” “vertical,” and the like do not refer to absolute directions. Rather, these terms refer to directions relative to a non-specific reference plane. This non-specific reference plane may be vertical, horizontal, or other angular orientations.

[0031] For ease of understanding, the same reference numerals are used where possible to denote the same elements common in the figures. It is contemplated that elements disclosed in one embodiment may be advantageously used in other embodiments without specific description. Detailed Implementation

[0032] The embodiments described herein generally relate to a substrate for semiconductor manufacturing, a processing chamber having the same substrate, and related methods. The processing chamber and substrate are intended for use in processing substrates other than semiconductor wafers, such as LED wafers, plastic substrates, windows, solar panels, and flat panel displays. The substrate includes multiple vent holes, which reduce slippage between the substrate and the substrate being processed thereon. This reduction extends the substrate's lifespan while decreasing particle generation and damage to substrate edges. These benefits advantageously reduce the cost of substrate processing. The vent holes are located in the central region of the substrate receiving recess. The pattern of the vent holes terminates away from the inner diameter wall of the substrate receiving recess and the edge of the substrate, effectively reducing unwanted leakage of deposited gas through the substrate, allowing the area of ​​the processing chamber below the substrate to remain clean for a longer period, thus advantageously extending the chamber cleaning and maintenance intervals, which also advantageously increases processing throughput and output.

[0033] Figure 1 This is a partial schematic side cross-sectional view of a processing chamber 100 including a base 123 according to one or more embodiments. The processing chamber 100 may be a deposition chamber or other type of vacuum processing chamber. In one or more embodiments, the processing chamber 100 is an epitaxial deposition chamber. The processing chamber 100 can be used to grow an epitaxial film on a substrate 102. The processing chamber 100 generates a cross-flow of precursors across the top surface 150 of the substrate 102. In one or more embodiments, the processing chamber 100 is used for rapid thermal processing. The processing chamber 100 can operate under vacuum, such as under reduced pressure or near atmospheric pressure.

[0034] Processing chamber 100 includes an upper body 156, a lower body 148 disposed below the upper body 156, and a flow module 112 disposed between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form at least a portion of a chamber body surrounding a processing volume 136. The upper body 156, the flow module 112, and the lower body 148 are centered on a centerline A. Within the processing volume of the chamber body are a substrate support 106, an upper window 108 (such as an upper dome), a lower window 110 (such as a lower dome), a plurality of upper heat sources 141, and a plurality of lower heat sources 143. Centerline A is also the centerline of the substrate support 106, the upper window 108, and the lower window 110. As shown, a controller 120 communicates with the processing chamber 100 and controls the operation of processing and methods, such as those described herein.

[0035] In one or more embodiments, the heat sources discussed herein (such as heat sources 141, 143) include radiant heat sources, such as lamps, for example, halogen lamps. This disclosure contemplates the use of other heat sources (other than or in place of lamps) for the various heat sources described herein. For example, resistance heaters, light-emitting diodes (LEDs), and / or lasers can be used for the various heat sources described herein.

[0036] The substrate support 106 is disposed between the upper window 108 and the lower window 110. The substrate support 106 includes a base 123 that supports the substrate 102.

[0037] Multiple upper heat sources 141 are disposed between the upper window 108 and the cover 154. The multiple upper heat sources 141 form part of the upper heat source module 155. The upper heat sources 141 provide heat to the substrate 102 and / or the base 123 of the substrate support 106. The upper heat sources 141 may be, for example, tungsten filament heat sources or higher power LEDs. The multiple upper heat sources 141 may direct radiation (such as infrared radiation) through the upper window 108 to heat the substrate 102 and / or the base 123 of the substrate support 106. The cover 154 may include multiple sensors disposed therein for measuring the temperature within the processing chamber 100.

[0038] Multiple lower heat sources 143 are disposed between the lower window 110 and the base plate 152. The multiple lower heat sources 143 form part of the lower heat source module 145. The lower heat sources 143 may be, for example, tungsten filament heat sources or higher power LEDs. The multiple lower heat sources 143 may guide radiation (such as infrared radiation) through the lower window 110 to heat the substrate 102 and / or the base 123 of the substrate support 106.

[0039] An upper heat source 141 above the base 123 may be mounted adjacent to or within the upper reflector 140. The upper reflector 140 may surround the periphery of the upper housing assembly 190. Generally, the upper reflector 140 and / or the upper housing assembly 190 may be formed of a reflective metal alloy, such as reflective aluminum alloy. An upper temperature sensor 192 (such as a pyrometer) may be mounted in or adjacent to the upper housing assembly 190 to detect the temperature of the substrate 102 during processing.

[0040] A lower heat source 143 may be mounted within or adjacent to the lower reflector 130 and within or adjacent to the lower housing assembly 193. The lower reflector 130 may surround the lower housing assembly 193. Generally, the lower reflector 130 and / or the lower housing assembly 193 may be at least partially (e.g., partially or entirely) formed of a reflective metal alloy (e.g., reflective aluminum alloy). A lower temperature sensor 194 (e.g., a pyrometer) may be mounted in the lower housing assembly 193 to detect the temperature on the back side of the base 123 or substrate 102. One or both of the lower reflector 130 and / or the lower housing assembly 193 may be manufactured as described later with reference to the upper housing assembly 190 and / or the upper reflector 140.

[0041] although Figure 1 The diagram shows heat sources 141 and 143 of the same size and number installed above and below the upper window 108 and lower window 110, respectively. However, heat sources of different types, intensities, wavelengths, numbers, and / or sizes may be installed within or adjacent to one or more reflectors 130 and 140. Furthermore, the upper heat source 141 and the lower heat source 143 may be located in additional and / or alternative positions.

[0042] The upper reflector 140, lower reflector 130, upper housing assembly 190, and lower housing assembly 193 (and / or other components including metal alloys) may be manufactured by processes such as (but not limited to) melt spinning or any other processing, including rapid liquid quenching, gas quenching, and / or rate-controlled chemical and solid-state reactions. One or more surfaces of the metal alloy may be further smoothed to increase surface reflectivity. In one or more embodiments, the metal alloy is an aluminum alloy. In one or more embodiments, the metal alloy is a brass alloy including copper and zinc. In one or more embodiments, the metal alloy includes a late transition metal (such as aluminum) and one or more transition metals (such as iron, nickel, copper, manganese, molybdenum, and / or zirconium). The metal alloy has an alloy composition comprising at least 80% late transition atomic percentage (such as aluminum atomic percentage) and at least 5% transition atomic percentage of one or more transition metals. In one or more embodiments, the sum of the late transition atomic percentage and the transition atomic percentage is at least 95%.

[0043] In one or more embodiments, the metal alloy comprises aluminum (e.g., having at least 80% aluminum atomic percentage) and at least one of silicon, copper, and / or magnesium (e.g., having at least 5% bound atomic percentage). In one or more embodiments, the sum of the aluminum atomic percentage and the bound atomic percentage is at least 95%.

[0044] Smoothing one or more outer surfaces includes polishing one or more outer surfaces. In one or more embodiments, polishing includes magnetorheological finishing (MRF). In one or more embodiments, polishing includes plasma electropolishing. Other polishing techniques may be considered.

[0045] Using metal alloys may eliminate the need for additional reflective coatings, as the metal alloys themselves already possess high reflectivity, or they can be polished to achieve high reflectivity. Furthermore, metal alloys offer high shape stability, low thermal expansion, high thermal conductivity, and are lightweight.

[0046] The light reflectivity of a material surface depends on the surface finish and also on the microstructure of the crystals on the surface. For example, by using melting, metal alloys with unique structures can be formed. That is, solid metal alloys are not composed of large, discrete crystals as in some microstructures, but are formed from microstructures without specific microstructures or grain boundaries. To facilitate obtaining the properties required for the target application, amorphous microstructures can be further customized by heat treatment into partially amorphous structures containing ultrafine crystals or fully crystalline structures with ultrafine crystals. In this way, ultrafine crystals can be formed within the microstructure. In one or more embodiments, the metal alloy surface has ultrafine grains and high surface reflectivity. Furthermore, polishing and surface finishing of the metal alloy result in a surface roughness equal to or less than 5 nanometers, such as equal to or less than 1 nanometer. This reduced surface roughness increases the reflectivity of the metal alloy.

[0047] One or more reflective surfaces of a chamber component comprising a metal alloy have a reflectivity of at least 90% for energy (e.g., light) having wavelengths in the infrared range. In one or more embodiments, the reflectivity is in the range of 90% to 99%. In one or more embodiments, the reflectivity is at least 95%, such as at least 98%.

[0048] When the disclosed metal alloy is used as a chamber component (such as the upper reflector 140 or the lower reflector 130) in the processing chamber 100, it may become very hot due to its proximity to the upper heat source 141 and / or the lower heat source 143. At these high temperatures, the reflective surfaces(s) of the reflector become very hot and are therefore oxidized by the pressure of the surrounding air. This oxidation may in turn reduce the reflectivity of the reflective surfaces(s) of the metal alloy. To reduce or eliminate oxidation and / or the reduction in reflectivity, the metal alloy may be coated with an IR transparent protective coating.

[0049] In one or more embodiments, the IR transparent protective coating is a single thin material layer, comprises multiple thin material layers, or comprises a laminated structure. The IR transparent coating may include one or more metal oxide layers, metal fluoride layers, and / or metal fluoride oxide layers. In one or more embodiments, the IR transparent coating is a stack of layers, wherein each layer in the stack has one or more of an oxide, fluoride, and / or fluoride oxide component. In one or more embodiments, the IR transparent coating is made of at least one of the following: alumina, other(multiple) oxides, magnesium fluoride, other(multiple) fluorides, magnesium fluoride oxyfluoride, and / or other(multiple) fluoride oxides. Other IR transparent materials are contemplated for use in the IR transparent protective coating. The IR transparent protective coating utilizes the reflectivity of the underlying metal alloy while promoting protection against oxidation. The IR transparent protective coating can be formed by simultaneously flowing ozone during a deposition operation (such as atomic layer deposition (ALD) or chemical vapor deposition (CVD) operation) on the metal alloy. The material promotes strong adhesion between the IR transparent protective coating and the metal alloy.

[0050] Some or all of the upper reflector 140, lower reflector 130, upper housing assembly 190, and lower housing assembly 193 may be at least partially (e.g., partially or entirely) made of the metal alloys disclosed herein. The reflectivity of the metal alloys is suitable for directing light to the substrate 102 or away from locations where light is not desired, without requiring any additional reflective coatings, such as gold, in other systems. The metal alloy may be encased in an IR-transparent protective coating as described above. The IR-transparent protective coating may be disposed above one or more reflective surfaces of the chamber(s). In one or more embodiments, the IR-transparent protective coating is an aluminum oxide layer. In one or more embodiments, the thickness T1 of the IR-transparent protective coating (e.g., ...) is... Figure 2B (As shown) in the range of about 5 nm to about 300 nm, such as in the range of about 5 nm to about 200 nm. In one or more embodiments, the thickness T1 of the IR transparent protective coating is less than 150 nm, such as less than 100 nm. In one or more embodiments, the thickness T1 is in the range of 10 nm to 100 nm, such as in the range of 10 nm to 60 nm. The IR transparent protective coating can transmit at least 90% (such as at least 95%, for example 98% or more) of energy (e.g., light) having wavelengths in the infrared range (such as about 700 nm to 1 mm). In one or more embodiments, the IR transparent protective coating is a magnesium fluoride layer having a thickness T1. If used, the thickness T1 of the magnesium fluoride layer can be in the range of about 20 nm to about 1 μm. The IR transparent protective coating can protect the polished reflective surfaces(s) of a metal alloy while reducing or eliminating the effect on the reflectivity of the metal alloy, which can have a reflectivity of 90% or higher.

[0051] All or some of the upper reflector 140, lower reflector 130, upper housing assembly 190, and lower housing assembly 193 may be made of the metal alloys discussed herein, or the upper reflector 140, lower reflector 130, upper housing assembly 190, and lower housing assembly 193 may not be made of the metal alloys discussed herein, and / or all or some of the upper reflector 140, lower reflector 130, upper housing assembly 190, and lower housing assembly 193 may include one or more reflective surfaces that have been surface-treated (e.g., polished) to a surface roughness (Ra) of 15.0 nm or less, or the upper reflector 140, lower reflector 130, upper housing assembly 190, and lower housing assembly 193 may not include one or more reflective surfaces that have been surface-treated (e.g., polished) to a surface roughness (Ra) of 15.0 nm or less. In one or more embodiments, the surface roughness (Ra) is 5.0 nm or less. In one or more embodiments, the surface roughness (Ra) is in the range of 0.2 nm to 5.0 nm. In one or more embodiments, the surface roughness (Ra) is 1.0 nm or less, such as 0.5 nm or less. Similarly, all or some of the upper reflector 140, lower reflector 130, upper housing assembly 190, and lower housing assembly 193 may have an IR-transparent protective coating applied to one or more of their reflective surfaces, or the upper reflector 140, lower reflector 130, upper housing assembly 190, and lower housing assembly 193 may not have an IR-transparent protective coating applied to one or more of their reflective surfaces. This disclosure contemplates that metal alloys, their polished reflective surfaces(s), and / or IR-transparent protective coatings may be used for at least a portion of any chamber component used to reflect thermal energy (e.g., light).

[0052] The upper window 108 and the lower window 110 are formed of an energy transfer material (such as quartz) and may be transparent in various embodiments to allow heat to be transferred from the upper heat source 141 and the lower heat source 143 to the substrate 102 and / or the base 123 of the substrate support 106.

[0053] The processing volume 136 and the purification volume 138 are formed between the upper window 108 and the lower window 110. The processing volume 136 and the purification volume 138 are part of the internal volume at least partially defined by the upper window 108, the lower window 110, the upper liner 122 and one or more lower liners 109.

[0054] An internal (e.g., processing) volume has a substrate support 106 disposed therein. The substrate support 106 includes a base 123 on which a substrate 102 is disposed. The base 123 of the substrate support 106 is attached to a shaft 118 via a plurality of arms. The shaft 118 is connected to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices that provide movement and / or adjustment of the shaft 118 and / or the substrate support 106 within the processing volume 136.

[0055] The substrate support 106 may include a lifting rod hole 107 disposed therein. In the illustrated example, the lifting rod hole 107 is formed in the base 123 and the arm. The lifting rod hole 107 is sized to accommodate a lifting rod 132 for lowering the substrate 102 onto and from the substrate support 106 before or during deposition processing. When the base 123 is lowered from the processing position to the transport position, the lifting rod 132 may rest on a lifting rod stop 134. The lifting rod stop 134 may be coupled to the second shaft 104 via a plurality of arms.

[0056] The flow module 112 includes a plurality of gas inlets 114, a plurality of purge gas inlets 164, and one or more gas outlets 116. In one or more embodiments, the plurality of gas inlets 114 and the plurality of purge gas inlets 164 are disposed on the side of the flow module 112 opposite to one or more gas outlets 116. Upper liner 122 and lower liner 109 are disposed on the inner surface of the flow module 112 and protect the flow module 112 from the reactive gases used during deposition and / or cleaning operations. The plurality of gas inlets 114 and the plurality of purge gas inlets 164 are each positioned to allow gas to flow parallel to the top surface 150 of the substrate 102 disposed within the processing volume 136. The plurality of gas inlets 114 are fluidly connected to one or more processing gas sources 151 and one or more cleaning gas sources 153. The plurality of purge gas inlets 164 are fluidly connected to one or more purge gas sources 162. The one or more gas outlets 116 are fluidly connected to an exhaust pump 157. One or more processing gases supplied using one or more processing gas sources 151 may include one or more reactive gases (such as one or more of silicon (Si), phosphorus (P), and / or germanium (Ge)) and / or one or more carrier gases (such as one or more of nitrogen (N2) and / or hydrogen (H2)). One or more purifying gases supplied using one or more purifying gas sources 162 may include one or more inert gases (such as one or more of argon (Ar), helium (He), hydrogen (H2), and / or nitrogen (N2)). One or more cleaning gases supplied using one or more cleaning gas sources 153 may include one or more of hydrogen (H) and / or chlorine (Cl). In one or more embodiments, one or more processing gases include silicon phosphide (SiP) and / or phosphine (PH3), and one or more cleaning gases include hydrochloric acid (HCl).

[0057] One or more gas outlets 116 are further connected to or include an exhaust system 178. The exhaust system 178 is fluidly connected to one or more gas outlets 116 and an exhaust pump 157. The exhaust system 178 may facilitate controlled deposition of layers on the substrate 102. In one or more embodiments, the exhaust system 178 is positioned on opposite sides of the processing chamber 100 relative to the gas inlets(s) 114 and / or the purge gas inlets 164.

[0058] A preheating ring 196 is disposed outside the substrate support 106. The preheating ring 196 is supported on the flange of one or more lower gaskets 109. In one or more embodiments, the preheating ring 196 and / or gaskets 109, 113 and / or 122 are formed of one or more of quartz (such as transparent quartz, clear quartz; opaque quartz, such as white or gray quartz; and / or black quartz), silicon carbide (SiC), and / or SiC-coated graphite.

[0059] During processing, one or more processing gases P1 flow from gas inlets(s) 114 into processing volume 136 and over substrate 102 disposed on base 123 to form (e.g., epitaxially grow) one or more layers on substrate 102 while heat sources 141, 143 heat preheating ring 196 and substrate 102. After flowing over substrate 102, one or more processing gases P1 flow out of internal volume through one or more gas outlets 116. Flow module 112 may be at least a portion of the sidewall of processing chamber 100. This disclosure also contemplates that one or more purge gases may be supplied to and discharged from purge volume 138 during deposition operation (through multiple purge gas inlets 164).

[0060] Figure 2A It is possible Figure 1 A top isometric view of an example of a base 123 used in a processing chamber 100 or other suitable processing chamber. The base 123 has a generally disc-shaped body 250. The disc-shaped body 250 of the base 123 may be made of graphite coated with silicon carbide (SiC). The body 200 may alternatively be made of quartz (such as transparent quartz, clear quartz; opaque quartz, such as white or gray quartz; and / or black quartz), SiC, or other suitable materials.

[0061] The disc-shaped body 250 has a top surface 210 and a bottom surface 211. The disc-shaped body 250 is generally symmetrical about the center line A of the base 123 (e.g., ...). Figure 1As shown), and is formed from a continuous single material block, that is, a single, monolithic structure. The centerline A of the main body 250 (… Figure 2A (Not shown) Extending vertically through the top surface 210 and bottom surface 211. The top surface 210 of the body 250 is generally divided into an inner region 204 and an edge 206. The edge 206 includes an inner diameter wall 208 surrounding and defining the inner region 204. In embodiments where the base 123 is configured for use with a 300mm substrate, the inner diameter wall 208 may have a diameter of at least 308mm, but a smaller diameter may be used. In some embodiments, the inner region 204 is substantially parallel to the edge 206. A portion of the top surface 210 containing the inner region 204 (i.e., the top surface 216 of the inner region 204) is slightly lower than the portion of the top surface 210 containing the edge 206, thereby forming a substrate receiving recess 212. The substrate receiving recess 212 prevents the substrate 102 from slipping off the base 123 during processing. The top surface 216 of the substrate receiving recess 212 may be coated with SiC. Figure 2A As shown, the top surface 216 of the substrate receiving recess 212 is substantially planar with respect to the transverse plane (X / Y plane) of the base 123. Alternatively, the substrate receiving recess 212 may be slightly recessed.

[0062] The substrate receiving recess 212 has a depth selected for receiving the substrate 102 so as to be processed within the processing chamber 100. The inner diameter wall 208 is typically formed with steps. Figure 3A As shown in Figure 308, it defines the interface between a portion of the top surface 216 of the inner region 204 and the top surface 210 of the edge 206. In one embodiment, the top surface 216 of the substrate receiving recess 212 may be approximately 0.5 mm to approximately 2.0 mm below the top surface 210 of the edge 206. In other words, the height of the inner diameter wall 208 may be approximately 0.5 mm to approximately 2.0 mm. The depth of the substrate receiving recess 212 may be selected to accommodate the thickness of the substrate 102 to be supported by the base 123. The diameter of the substrate receiving recess 212 is selected such that the substrate to be processed on the base 123 is spaced apart from the inner diameter wall 208.

[0063] The top surface 216 of the substrate receiving recess 212 is divided into two distinct regions: a non-ventilated region 260 and a ventilated region 262. The non-ventilated region 260 completely surrounds the ventilated region 262 and extends from the ventilated region 262 to the inner diameter wall 208 of the edge 206. The non-ventilated region 260 has a solid boundary 270 without holes. The ventilated region 262 includes two types of holes extending through the body 250 between the top surface 210 and the bottom surface 211. The first type of hole provided in the ventilated region 262 is a lifting rod hole 202 (in... Figure 1(Also indicated as 107). Typically, there are three or more lifting rod holes 202 formed through the body 250. A second type of hole provided in the venting area 262 is a vent hole 290. In one example, the vent hole 290 extends linearly through the body 250 to allow gas to escape more quickly and efficiently from below the substrate. The diameter of the vent hole 290 is typically much smaller than the diameter of the lifting rod hole 202. For example, the diameter of the vent hole 290 may be at least one-third or even half the diameter of the lifting rod hole 202. The number of vent holes 290 is at least an order of magnitude greater than the number of lifting rod holes 202. In some examples, multiple vent holes 290 formed through the body 250 in the venting area 262 are arranged in an X / Y grid. In other examples, the vent holes 290 are radially aligned and / or form concentric rings. The density and / or opening area of ​​the vent holes 290 can vary across the venting region 262 to create areas with more vent holes 290 and / or openings compared to other areas, such as the center of the substrate receiving recess 212 compared to the outer edge of the venting region 262 near boundary 270. Some vent holes 290 may have different cross-sectional areas. Additionally, although the vent holes 290 are shown as having a circular cross-section, the cross-sectional profile of the holes may not be circular. When the substrate 102 is transferred to the base 123, the vent holes 290 generally allow gas to escape between the substrate 102 and the base 123. By allowing gas to escape, the substrate 102 is less likely to slip on the base 123 during transfer, which advantageously produces fewer particles and reduces the likelihood of damaging the substrate edges. Therefore, the vent holes 290 contribute to greater substrate throughput and a longer lifespan for the base 123.

[0064] The base 123 is provided with a plurality of bumps 214, such as three or more bumps, extending radially inward from the inner diameter wall 208 of the edge 206 to the boundary 270 of the non-ventilated area 260. In one example, the base 123 may include five, six, seven, eight or more bumps 214. The bumps 214 radially position and / or center the substrate within the substrate receiving recess 212, while reducing the contact surface area between the substrate and the base 123 when the substrate is supported by the base 123. It may be desirable to minimize and / or reduce the contact surface area between the substrate and the base 123 in order to reduce hot spot effects caused by above-average heat transfer to the substrate at the outer edge. In some embodiments, the bumps 214 may be shaped and / or aligned to reduce and / or minimize their contact surface area with the outer edge of the substrate. Figure 2AAs shown, bump 214 appears circular when viewed from above. However, it is contemplated that bump 214 can be any suitable shape when viewed from above, such as arched, rectangular, square, V-shaped, U-shaped, C-shaped, or a combination thereof. Bump 214 can be formed of the same material as or a different material from the base 123, and can be made of silicon carbide or graphite coated with silicon carbide or glassy carbon. It is contemplated that the substrate can contact one or more bumps 214 during processing without contacting the inner diameter wall 208 of edge 206.

[0065] Figure 2C This is a partial top view of base 123, showing an example of bump 214. When measured using the diameter of inner diameter wall 208 as an origin, bump 214 typically extends a distance 280 from inner diameter wall 208 into boundary 270. Distance 280 may be greater than about 3.0 mm, such as between about 3.5 mm and about 5.5 mm. Bump 214 includes a first segment 256 and a third segment 254 coupled to inner diameter wall 208 via a second segment 252. The second segment 252 and the third segment 254 connect the first segment 256 to inner diameter wall 208. The geometry of the second segment 252 and the third segment 254 is generally symmetrical about the midpoint of the first segment 256. The second segment 252 and the third segment 254 have radii greater than about 4.0 mm, such as from about 5.0 mm to about 8.0 mm. The first segment 256 has a radius greater than approximately 4.0 mm, such as approximately 5.0 mm to approximately 8.0 mm. When disposed in the substrate receiving recess 212, the large radius of the first segment 256 (compared to conventional bases) reduces damage to the edges of the substrate 102 due to the increased contact area. In particular, compared to conventional base designs, the combination of reduced substrate sliding due to the large radius of the first segment 256 of the vent hole 290 and the bump 214 not only reduces damage to the edges of the substrate, but also results in a much slower bump wear due to the gentler contact between the first segment of the bump and the substrate, which significantly and beneficially extends the service life of the base 123.

[0066] The first segment 256 of the bump 214 is typically spaced 282 away from an imaginary line (shown as a dashed line in the figures) separating the non-ventilated area 260 from the ventilated area 262. This imaginary line separating the non-ventilated area 260 from the ventilated area 262 is typically located at a diameter S relative to the centerline A of the body 250, where the diameter S is smaller than the diameter of the substrate 102 supported in the substrate receiving recess 212. In some examples, the diameter S may be less than about 298 mm, such as less than 290 mm, or even less than 285 mm. As a result, the boundary 270 without holes extends below the edge of the substrate 102, thereby significantly reducing the probability of unwanted deposited gas passing under the substrate, and more importantly, significantly reducing the probability of deposited gas undesirably reaching the area of ​​the processing chamber 100 below the base 123 via the vent hole 290. Preventing deposited gas from reaching the area below the base 123 of the processing chamber 100 significantly increases the interval between chamber cleanings, which beneficially increases processing capacity and output while also reducing ownership costs.

[0067] To ensure that boundary 270 extends below the edge of substrate 102 when disposed in substrate receiving recess 212, an imaginary line separating non-ventilated region 260 from ventilated region 262 may be configured to be at least a distance 284 from inner diameter wall 208. The imaginary line separating non-ventilated region 260 from ventilated region 262 may be configured to be at least a distance 282 from bump 214. Similarly, closed vent hole 290 may be configured to be at least a distance 286 from bump 214. In one example, for a 300mm substrate, one or more of distances 282, 284, and 286 may be selected such that distance 282 is at least about 4mm, such as greater than 8mm, greater than 13mm, or greater than 18mm; distance 284 is at least about 10mm, such as greater than 15mm or greater than 20mm; and / or distance 286 is at least about 4mm, such as greater than 8mm, greater than 13mm, or greater than 18mm.

[0068] Return to reference Figure 2B One of the bumps 214 extends radially inward from the inner diameter wall 208 of the edge 206 toward the inner region 204. The distance 280 of each of the bumps 214, measured radially in the transverse plane (X / Y plane) of the base 123, is approximately 2 mm to approximately 4 mm, such as approximately 3 mm. The cross-sectional view also shows one of the lifting rod holes 202 and a vent hole 290, which is oriented orthogonally to the transverse plane (X / Y plane) of the base 123 (e.g., parallel to the centerline A) and extends from the bottom surface 211 of the base 123 through to the top surface 216 of the substrate receiving recess 212. Optionally, the vent hole 290 is oriented non-orthogonally to the transverse plane of the base 123.

[0069] Figure 3A It is based on one or more embodiments. Figure 1 An enlarged partial cross-sectional view of an exemplary base 123 is provided, which can be combined with other embodiments disclosed herein. The base 123 has a pattern 302 of substrate support pillars 304 formed on the top surface 216 of a substrate receiving recess 212. The substrate support pillars 304 may be confined to a venting region 262, or alternatively, extend partially or completely across boundary 270. In some examples, the substrate support pillars 304 are arranged in an X / Y grid. In other examples, the substrate support pillars 304 are radially aligned and / or form concentric rings. The density of the substrate support pillars 304 may vary across the top surface 216 to create regions with more support pillars compared to other regions, such as the center of the venting region 262 compared to or near boundary 270. Some substrate support pillars 304 may have different cross-sectional areas.

[0070] Although Figure 3A Only the outline of pattern 302 along the X-axis is shown, but it can be expected that the pattern substrate support pillars 304 are arranged in a uniform grid across the entire top surface 216 (e.g., Figure 3B (As shown in the top view). In some embodiments, pattern 302 has a grid layout of substrate support pillars 304 in the form of frustocones separated by a plurality of channels 306. Channels 306 may have V-shapes or other shapes. Vent holes 290 pass through the body 250 to the channels 306. Each support pillar 304 has a substrate contact surface 310 defined at a top surface 216. The substrate contact surface 310 is recessed from a portion of the top surface 210 of the defining edge 206. The substrate contact surface 310 is substantially planar and parallel to the transverse plane (X / Y plane) of the base 123. The substrate contact surfaces 310 are coplanar with each other for common contact and support of the substrate 102. Figure 3B As shown, because the support pillar 304 is pyramidal, each substrate support pillar 304 has four sidewalls, and the V-shaped channels are oriented at 90° intervals.

[0071] Generally, the pattern is designed to improve the uniformity of heat transfer from the base to the substrate, while facilitating the exhaust of waste gases (e.g., air) from beneath the substrate. In some embodiments, the substrate support pillars 304 are uniformly distributed and the substrate contact surfaces are uniformly spaced to provide uniform direct contact between the base and the substrate, resulting in greater uniformity of conductive heat transfer therebetween. In some embodiments, it may be desirable to increase the number of contact points between the base and the substrate while minimizing the contact surface area. This can be achieved by reducing the size of each substrate contact surface, as described in more detail below.

[0072] The number and / or spacing between channels can be selected to enable rapid gas venting from the recesses. In some embodiments, uniform spacing of the channels can improve ventilation by reducing the overall resistance to airflow. Without channels, gas may be trapped, for example, when the substrate is initially positioned on the pedestal, during processing, or similarly. If the gas remains trapped, for example, during a rapid decrease in chamber pressure, the trapped gas may expand against the reduced chamber pressure, causing the substrate to lift, shift, or otherwise move from its position on the pedestal.

[0073] Figure 3C A cross-sectional view of pattern 302 is shown in more detail. Certain dimensions of pattern 302 are chosen to provide the advantages outlined above. For example, the lateral distance (i.e., spacing) 312 between adjacent substrate support pillars 304 (such as the pyramidal support pillars 304 of base 123) can be from about 0.5 mm to about 3 mm, such as about 1 mm to about 2 mm, such as about 1 mm, such as about 2 mm. The lateral distance 312 corresponds to the grid size of the pattern measured along the X-axis from center to center of the adjacent substrate support pillars 304 (e.g., a 1 mm grid or a 2 mm grid). The lateral distance 312 along the Y-axis can be the same as or different from the lateral distance 312 along the X-axis. Figure 3B-3C In the depicted example, the lateral distance 312 is the same along the X and Y axes. In some embodiments, the vertical height 314 of the substrate support pillar 304 of the base 123 may be from about 0.25 mm to about 2 mm, such as about 0.5 mm. The vertical height 314 is measured along the z-axis from the top surface 216 to the bottom surface 316 of the channel. In some embodiments, it may be necessary to increase the height of the substrate support pillar 304 to improve airflow while keeping the support feature height to a minimum to prevent the formation of cold spots between the base 123 and the substrate 102.

[0074] In some embodiments, the lateral width 318 of the channel 306 of the base 123 may be from about 0.5 mm to about 10 mm. The lateral width 318 corresponds to the width of the bottom surface 316 of each channel measured along the X-axis or Y-axis between adjacent substrate support pillars 304. In some embodiments, when the channel 306 has a V-shape, the angle 320 of the channel 306 of the base 123, measured between the sidewalls 322 of adjacent substrate support pillars, may be from about 5° to about 60°. The angle 320 may be selected to balance the reflection of radiant heat from the lamp to obtain better temperature uniformity. In other words, because the distribution of radiation reflected and / or emitted from the interior region 204 of the base 123 is directional, the angle 320 may be determined such that the radiant heat transfer from the base 123 to the substrate 102 is gradually isotropic (i.e., has the same value when measured from different directions). It should be understood that the above dimensions also define the dimensions of each substrate contact surface 310 along the top surface 216. It may be necessary to reduce the contact surface area between the substrate contact surface 310 and the substrate 102 to allow a higher percentage of heat transfer as radiative heat, thereby resulting in improved temperature control and improved heat treatment and / or deposition on the substrate. In some embodiments, the ratio of the total contact surface area of ​​the substrate contact surface 310, measured in the X / Y plane, to the total surface area of ​​the substrate receiving recess 212 inside the inner diameter wall 208 of the edge 206 is about 0.5% to about 5%, such as about 0.5% to about 3%, such as about 1% to about 2%. Advantageously, the ultra-low surface area ratio of the substrate contact surface 310 (such as about 5% or less) reduces the ratio of conductive to radiative heat transfer from the base 123 to the substrate 102, which improves temperature uniformity and thus produces better processing results. Because the ratio of conductive to radiative heat transfer is positively correlated with the aforementioned surface area ratio, further reducing the surface area ratio can further reduce the portion of conductive heat transfer, thereby having a positive impact on the processing results. Furthermore, the base implementation with an ultra-low surface area ratio advantageously provides suitable mechanical support to the substrate 102 to prevent warping, while increasing randomly oriented radiative heat emission and reducing temperature variations between adjacent substrate support pillars 304 based on the precisely determined spacing between them.

[0075] Optionally, the bottom surface 111 of the base 123 may include a textured surface 350 and / or a recess 352. The textured surface 350 and / or the recess 352 may be a mirror image of the substrate support post 304 and / or the substrate receiving recess 212, such that the stress on opposite sides of the body 250 (i.e., the top surface 210 and the bottom surface 211) is more evenly matched, thereby reducing the likelihood of warping of the body 250. In other examples, the textured surface 350 may have a structure substantially opposite to that of the substrate support post 304. In other examples, the recess 352 may have a structure substantially opposite to that of the substrate receiving recess 212. In still other examples, the textured surface 350 may have other pits, ridges, grooves, or other surface features that disrupt the plane of the bottom surface 111.

[0076] Figure 4 This is a partial cross-sectional view of a base 400 according to one or more embodiments, which can be used to replace... Figure 1 The base 123 in the processing chamber 100, one or more embodiments may be combined with other embodiments disclosed herein. Figure 4 In pattern 402, the support 404 and channel 406 are circular or curved. In some other embodiments (not shown), the support 404 is contemplated to be any curved shape, such as a frustum, spherical, or elliptical, or a combination thereof. The curved support 404 has smooth sidewalls 422, which generate more randomly oriented thermal radiation compared to planar sidewalls. Therefore, the curved support 404 can further improve heat transfer uniformity beyond what is discussed here. Compared to the planar substrate contact surface 310 of pattern 302, the curved substrate contact surface 410 of pattern 402 reduces the total contact surface area between the substrate contact surface 410 and the substrate 102. Compared to other base embodiments disclosed herein, the reduced contact surface area of ​​the base 400 can further improve thermal uniformity when handling the substrate by reducing conductive heat transfer. In some embodiments, the total contact surface area between the substrate contact surface 410 and the substrate 102 (measured as a fraction of the surface area in the X / Y plane of the substrate receiving recess 212 inside the inner diameter wall 208 of the edge 206) is about 0.1% to about 5%, such as about 0.1% to about 3%, such as about 0.5% to about 2%.

[0077] Figure 5A This is a partial cross-sectional view of a base 500 according to one or more embodiments, which can be used to replace... Figure 1 The base 123 in the processing chamber 100, one or more embodiments may be combined with other embodiments disclosed herein. Figure 5B This is a top view of a portion of the base 500. Figures 5A-5BIn the diagram, when viewed from above, the supports 504 and channels 506 of pattern 502 are hexagonal. Similar to the substrate contact surface 310 of pattern 302, the substrate contact surface 510 of pattern 502 is substantially planar and parallel to the transverse plane (X / Y plane) of the base 500 and substantially parallel to the bottom surface 516 of the channels 506. The substrate contact surfaces 510 are also coplanar with each other, serving to jointly contact and support the substrate 102. However, compared to pattern 302, each support 504 of pattern 502 has six sidewalls 522 instead of four, and the radiating surface area is correspondingly increased. The increased radiating surface area of ​​the hexagonal supports 504 improves heat transfer uniformity compared to the pyramidal support pillars 304 with the same contact surface area. In contrast to pattern 302, the channels 506 are oriented at 60° intervals instead of 90° intervals. In some embodiments, the total contact surface area between the substrate contact surface 410 and the substrate 102 (measured as a fraction of the surface area in the X / Y plane of the substrate receiving recess 212 inside the inner diameter wall 208 of the edge 206) is about 0.1% to about 5%, such as about 0.1% to about 3%, such as about 0.5% to about 2%. In some other embodiments (not shown), it is contemplated that the substrate support post 304, when viewed from above, can be any suitable shape, such as rectangular, rhomboid, square, triangular, circular, hexagonal, other shapes, or combinations thereof. In some embodiments that can be combined with other embodiments, the substrate support post 304 can be a tetrahedron, hemispherical, other circular shape, other 3D shape, or combinations thereof. Any of the above-described substrate support posts 304 can be truncated to form a planar and parallel support surface spanning the substrate support post 304.

[0078] Figures 6A-6C Examples of alternative substrate support pillars that can replace the aforementioned substrate support pillar 304 are shown. Figure 6A The image shows a support column 600, which has a top surface 216 with a surface area smaller than the cross-sectional area of ​​the column 600. Figure 6B The illustrated example shows a support column 610 with a top surface 216 in a fully circular shape. Figure 6C The illustrated example shows a support post 620 having a curved top surface 216, for example, in a dome shape. In other examples, the distal end of the substrate support post may be curved, have an edge radius or bevel, be fully circular, be dome-shaped, or have another suitable geometry.

[0079] It should be noted that the bottom surface 111 of any of the bases 400 and 500 may optionally include a textured surface 350 and / or a recess 352.

[0080] The substrate embodiments described herein allow for more uniform temperature control of the substrate during heat treatments such as epitaxy. Temperature control near the outer edge of the substrate is improved by reducing the surface area of ​​the contact substrate's outer edge, which reduces edge heat spikes and conductive heat transfer from the substrate to the substrate at the outer edge. The embodiments disclosed herein reduce and / or minimize the contact surface area between the outer edges of the substrate and the substrate by providing very few centering bumps (e.g., three bumps) around the circumference of the substrate.

[0081] Generally, planar recessed bases increase conductive heat transfer compared to bases that support the substrate only near the outer edge. Because conductive heat transfer between the base and the substrate is more difficult to control than radiative heat transfer, reducing and / or minimizing direct contact between the base and the back side of the substrate is desirable. The base embodiments disclosed herein reduce direct contact between the base and the back side of the substrate by providing a patterned surface with multiple substrate support pillars, as described later below. Direct contact can be reduced based on the design of the pattern, including the layout and size of the support pillars. Reducing the surface area of ​​the substrate in contact with the base allows a higher percentage of heat transfer to be radiative, resulting in improved temperature control and improved heat treatment and / or deposition on the substrate. The base embodiments disclosed herein also improve base life, average time between chamber cleaning, and higher throughput by using vents formed within the recessed cavities of the base (which significantly reduces substrate slippage within the cavities during substrate transport). Furthermore, the large-radius bumps used to center the substrate within the cavity also help improve the substrate's lifespan, average time between chamber cleaning, and throughput by reducing the likelihood of damage to the substrate edges and reducing wear on the substrate.

[0082] While the foregoing relates to embodiments of this disclosure, other and further embodiments of this disclosure may be devised without departing from the basic scope of this disclosure, and the scope of this disclosure is defined by the following claims.

Claims

1. A base, the base comprising: A disc-shaped body having a first side and a second side, a centerline extending forward through the first side and the second side, the body comprising: The edge has an inner diameter wall, which is defined at a first radius relative to the centerline; An internal region surrounded by the inner diameter wall of the edge, the internal region being recessed relative to the edge to form a recessed cavity, the recessed cavity being configured to receive a substrate; Multiple protrusions extend radially from the inner diameter wall of the side to the inner region; Multiple lifting rod holes are formed through the internal region; and A ventilation area, defined within the internal area, is defined by a plurality of ventilation holes formed through the main body, and terminates at a second radius originating from the centerline, wherein the diameter of each of the plurality of ventilation holes is smaller than the diameter of each of the lifting rod holes.

2. The base as claimed in claim 1, wherein the base further comprises: A pattern formed in its top surface, the pattern comprising a plurality of substrate support pillars separated by a plurality of ventilation channels, the plurality of ventilation holes exiting the top surface and entering the plurality of ventilation channels.

3. The base of claim 2, wherein each substrate support post includes a substrate contact surface along the top surface of the inner region, and wherein the surface area ratio of the substrate contact surface is about 5% or less.

4. The base of claim 2, wherein each substrate support post includes a substrate contact surface along the top surface of the inner region, and wherein the substrate contact surface is substantially planar with respect to the transverse plane of the disc-shaped body.

5. The base as claimed in claim 2, wherein the substrate support column has a curved substrate contact surface.

6. The base as claimed in claim 1, wherein the second radius is at least 4.0 mm smaller than the first radius.

7. The base as claimed in claim 1, wherein the second radius is at least 8.0 mm smaller than the first radius.

8. The base as claimed in claim 1, wherein the second radius is at least 18.0 mm smaller than the first radius.

9. The base of claim 1, wherein the first bump of the plurality of bumps further comprises: The first segment has a radius greater than approximately 4 mm; The second section connects the inner diameter wall of the edge to the first section; and The third section connects the inner diameter wall of the side to the first section.

10. The base of claim 9, wherein the first section of the first protrusion is at least 8 mm from the nearest of the plurality of vent holes.

11. The base as claimed in claim 1, wherein the base further comprises: A non-ventilated area, defined within the inner area and surrounding the ventilated area, wherein the non-ventilated area has no openings.

12. A base, the base comprising: A disc-shaped body having a first side and a second side, a centerline extending forward through the first side and the second side, the body comprising: The edge has an inner diameter wall, which is defined at a first radius relative to the centerline; An internal region surrounded by the inner diameter wall of the edge, the internal region being recessed relative to the edge to form a recessed cavity, the recessed cavity being configured to receive a substrate; A plurality of protrusions extend radially from the inner diameter wall of the side to the inner region, the plurality of protrusions being configured to contact the outer edge of the substrate when the substrate is disposed in the recessed cavity, each of the plurality of protrusions extending into the inner region; Multiple lifting rod holes are formed through the internal region; and A ventilation area, defined within the internal area, is defined by a plurality of ventilation holes formed through the body, and terminates at a second radius originating from the centerline, the second radius being at least 4.0 mm smaller than the first radius. The diameter of each of the plurality of ventilation holes is smaller than the diameter of each of the lifting rod holes, and the plurality of ventilation holes are at least 2 mm away from the plurality of protrusions. and A pattern formed in the top surface of the recessed region, the pattern comprising a plurality of substrate support pillars separated by a plurality of ventilation channels, the plurality of ventilation holes exiting the top surface and entering the plurality of ventilation channels.

13. The base of claim 12, wherein the first bump of the plurality of bumps further comprises: The first segment has a radius greater than approximately 4 mm; The second section connects the inner diameter wall of the edge to the first section; and The third section connects the inner diameter wall of the side to the first section.

14. The base of claim 13, wherein the first segment of the first protrusion is at least 8 mm away from the second radius.

15. The base of claim 13, wherein the base further comprises: A non-ventilated area, defined within the inner area and surrounding the ventilated area, wherein the non-ventilated area has no openings.

16. The base of claim 15, wherein each substrate support post includes a substrate contact surface along the top surface of the inner region, and wherein the substrate contact surface is coplanar and parallel to the transverse plane of the disc-shaped body.

17. The base of claim 15, wherein the plurality of substrate support pillars have curved substrate contact surfaces.

18. The base of claim 15, wherein the base further comprises: A SiC coating is disposed on the top surface of the recessed region.

19. A processing chamber, the processing chamber comprising: A chamber body having a processing volume; A base disposed within the processing volume; Multiple lamps, positioned to radiate heat to the base, the base comprising: A disc-shaped body having a first side and a second side, a centerline extending forward through the first side and the second side, the body comprising: The edge has an inner diameter wall, which is defined at a first radius relative to the centerline; An internal region surrounded by the inner diameter wall of the edge, the internal region being recessed relative to the edge to form a recessed cavity, the recessed cavity being configured to receive a substrate; A plurality of protrusions extend radially from the inner diameter wall of the side to the inner region, the plurality of protrusions being configured to contact the outer edge of the substrate when the substrate is disposed in the recessed cavity, each of the plurality of protrusions extending into the inner region; Multiple lifting rod holes are formed through the internal region; A ventilation area, defined within the internal area, is defined by a plurality of ventilation holes formed through the main body, and terminates at a second radius originating from the centerline, the second radius being at least 4.0 mm smaller than the first radius, wherein the diameter of each of the plurality of ventilation holes is smaller than the diameter of each of the lifting rod holes; A non-ventilated area, defined within the inner area and surrounding the ventilated area, the non-ventilated area having no holes; and Multiple substrate support pillars are formed in the internal region.

20. The processing chamber of claim 19, wherein the substrate support post has a curved substrate contact surface.

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