Small integrated sensor packaging method
By employing plasma cleaning, chemical and physical cleaning, alumina ceramic particle encapsulation, and heat dissipation structure design, the problems of impurity removal, bonding strength, and heat dissipation in the packaging of small integrated sensors have been solved, thereby improving the performance stability and reliability of the sensors.
Patent Information
- Application Number
- CN202510963914.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-07-14
- Publication Date
- 2025-11-14
AI Technical Summary
In existing small integrated sensor packaging technologies, traditional cleaning methods are difficult to effectively remove stubborn impurities and contaminants from the chip surface, which can easily damage the chip. The bonding strength of the packaging material is insufficient, and it is difficult to balance heat dissipation performance, mechanical strength and insulation, which affects the performance stability and reliability of the sensor.
The process employs plasma cleaning technology combined with chemical and physical cleaning, encapsulates the product using epoxy resin-based composite material filled with alumina ceramic particles, and then adds a heat dissipation structure and a waterproof and corrosion-resistant coating. In addition, performance testing and calibration are used to optimize the encapsulation process parameters.
It effectively removes impurities and contaminants from the chip surface, enhances the bonding strength of the packaging material, improves the heat dissipation performance, mechanical strength and insulation performance of the sensor, and improves the measurement accuracy and durability of the sensor.
Smart Images
Figure CN120954979A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of sensor packaging technology, and more specifically, to a method for packaging a small integrated sensor. Background Technology
[0002] With the rapid development of the Internet of Things and smart devices, small integrated sensors, as key sensing components, directly affect the overall function of devices in terms of performance and reliability. However, existing small integrated sensor packaging technologies face many challenges. In the chip preprocessing stage, traditional cleaning methods are insufficient to effectively remove stubborn impurities and contaminants from the chip surface and can easily damage the chip, leading to unstable sensor performance after subsequent packaging. Simultaneously, the lack of effective surface activation treatments results in insufficient bonding strength between the chip and the packaging material, affecting the long-term reliability of the sensor. Furthermore, traditional packaging materials struggle to achieve a balance between heat dissipation, mechanical strength, and insulation, failing to meet the high-performance packaging material requirements of small integrated sensors. Therefore, we propose an improvement to address these issues, introducing a packaging method for small integrated sensors. Summary of the Invention
[0003] This invention provides a method for packaging a small integrated sensor, comprising the following steps: A small integrated sensor chip is provided. The small integrated sensor chip is pre-treated by first activating the surface of the small integrated sensor chip using plasma cleaning technology with argon gas as the treatment gas for 3-5 minutes. Then, a combination of chemical cleaning and physical cleaning is used to remove impurities and contaminants from the surface of the small integrated sensor chip. The cleaning agent used for chemical cleaning is a mixed solution containing 8%-12% hydrofluoric acid and 12%-18% ethanol by volume. The physical cleaning uses ultrasonic cleaning with an ultrasonic frequency of 25kHz-35kHz for 8-12 minutes. After cleaning, the small integrated sensor chip is dried with high-purity nitrogen gas. An epoxy resin-based composite material is used as the encapsulation material, which is filled with 35%-45% alumina ceramic particles by mass. The small integrated sensor chip is encapsulated by a vacuum injection molding process. Before injection molding, the encapsulation mold is preheated to 60℃-80℃. The vacuum degree of the vacuum injection molding process is 0.02MPa-0.04MPa, and the injection temperature is 90℃-110℃. After injection molding, the chip is cured at 120℃-150℃ for 1-2 hours to form a preliminary encapsulation. A heat dissipation structure is provided on the surface of the preliminary package. The heat dissipation structure includes a heat dissipation substrate and heat dissipation fins. The heat dissipation substrate is made of copper and is bonded to the preliminary package with thermally conductive silicone with a thermal conductivity of not less than 4 W / (m·K). The heat dissipation fins are vertically arranged on the heat dissipation substrate. The heat dissipation fins are made of copper, with a thickness of 0.15 mm-0.25 mm, a height of 3 mm-4 mm, a spacing of 0.8 mm-1.2 mm between adjacent heat dissipation fins, and the surface of the heat dissipation fins is coated with a graphene heat dissipation coating. The pressure and temperature performance of the packaged miniature integrated sensor was tested using standard pressure and temperature sources to obtain the pressure-output voltage curve and temperature-output voltage curve of the miniature integrated sensor. The obtained curves were fitted using the least squares method to calculate the nonlinear error and hysteresis error of the miniature integrated sensor. Based on the error calculation results, the miniature integrated sensor was calibrated by adjusting the parameters of the compensation circuit inside the miniature integrated sensor. After calibration, a 12μm-18μm thick polytetrafluoroethylene waterproof and corrosion-resistant coating was applied to the surface of the miniature integrated sensor.
[0004] Compared with the prior art, the beneficial effects of the present invention are as follows: In the scheme of this application: 1. This application uses plasma cleaning technology to activate the surface of small integrated sensor chips, and combines chemical cleaning and ultrasonic physical cleaning in a specific ratio, which can effectively remove impurities and contaminants from the surface of small integrated sensor chips, while enhancing the surface activity of small integrated sensor chips, improving the bonding strength between small integrated sensor chips and packaging materials, and ensuring the stability and reliability of small integrated sensor performance. 2. This application uses epoxy resin-based composite material filled with alumina ceramic particles as encapsulation material, adds coupling agent to enhance the internal bonding force of the material, and by precisely controlling various parameters in the vacuum injection molding process, the encapsulation material tightly and uniformly wraps the small integrated sensor chip, reduces internal bubbles and stress, improves the mechanical strength, thermal stability and insulation performance of the sensor, and extends the service life of the small integrated sensor. 3. Before performance testing, this application places the sensor in a specific constant temperature and humidity environment to reach equilibrium and eliminate environmental interference; it uses a standard pressure source, temperature source and least squares method for detection and data processing, combined with a compensation circuit including adjustable resistors, capacitors and operational amplifiers, which can accurately calibrate the sensor, effectively correct nonlinear errors and hysteresis errors, and significantly improve the measurement accuracy of the sensor. 4. This application involves roughening the surface of a small integrated sensor by sandblasting and then coating it with a polytetrafluoroethylene waterproof and anti-corrosion coating. Through electrostatic spraying and high-temperature sintering processes, the coating has good adhesion and density, effectively resisting the damage of water and corrosive media, and improving the adaptability and durability of the small integrated sensor in complex environments. Attached Figure Description
[0005] Figure 1 A schematic diagram of the packaging method for a small integrated sensor provided in this application; Figure 2 A schematic diagram of the pretreatment process parameters provided in this application; Figure 3 A schematic diagram of the packaging material and injection molding process provided in this application; Figure 4 A schematic diagram of the heat dissipation structure design parameters provided in this application; Figure 5 A schematic diagram of the performance testing and calibration standards provided for this application; Figure 6 A schematic diagram of the waterproof coating process parameters provided in this application. Detailed Implementation
[0006] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.
[0007] It should be noted that, unless otherwise specified, the embodiments and features and technical solutions in the present invention can be combined with each other.
[0008] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.
[0009] Example 1, please refer to Figures 1-6A method for packaging a small integrated sensor includes the following steps: providing a small integrated sensor chip; pre-treating the small integrated sensor chip by first activating the surface of the small integrated sensor chip using plasma cleaning technology with argon gas as the treatment gas for 3-5 minutes; then removing impurities and contaminants from the surface of the small integrated sensor chip using a combination of chemical and physical cleaning methods, wherein the cleaning agent used for chemical cleaning is a mixed solution containing 8%-12% hydrofluoric acid and 12%-18% ethanol by volume, and the physical cleaning uses ultrasonic cleaning with an ultrasonic frequency of 25kHz-35kHz for 8-12 minutes; and after cleaning, drying the small integrated sensor chip with high-purity nitrogen gas. Argon plasma (processing time 3-5 minutes) removes nanoscale organic contaminants through high-energy ion bombardment, increasing the surface energy from approximately 30 mJ / m² to over 70 mJ / m², reducing the contact angle of the encapsulation material by 30°-40° and improving the bonding strength by 40%-60%; 8%-12% hydrofluoric acid removes metal oxides, with the etching rate controlled at 0.5-1.5 nm / min. 12%-18% ethanol reduces surface tension (approximately 22 mN / m), enhancing the penetration of the cleaning agent; 25-35 kHz ultrasonic cavitation effect generates microjets (velocity > 10 m / s), removing submicron-sized particles (diameter < 1 μm), reducing particle residue from approximately 10... 5 The number of pieces / cm² decreased to below 10³ pieces / cm²; The ultrasonic frequency of 25-35kHz matches the chip's inherent frequency (typically >1MHz) to avoid resonance damage; the 8-12 minute cleaning time balances efficiency and effectiveness, with a typical contaminant removal rate of >99.9%. Epoxy resin-based composite material is used as the encapsulation material. The epoxy resin-based composite material is filled with alumina ceramic particles with a mass fraction of 35%-45%. The small integrated sensor chip is encapsulated by vacuum injection molding process. Before injection molding, the encapsulation mold is preheated to 60℃-80℃. The vacuum degree of the vacuum injection molding process is 0.02MPa-0.04MPa, and the injection temperature is 90℃-110℃. After injection molding, it is cured at 120℃-150℃ for 1-2 hours to form a preliminary encapsulation. The use of 35%-45% alumina ceramic particles (5-15μm in diameter) increases the thermal conductivity from 0.2 W / (m·K) of pure epoxy resin to 1.5-2.5 W / (m·K), reduces the coefficient of thermal expansion (CTE) from 60-80 ppm / ℃ to 30-40 ppm / ℃, and reduces the mismatch stress with silicon chips (CTE approximately 3 ppm / ℃) by more than 50%. Preheating the mold to 60-80℃ reduces the material viscosity (from approximately 5000 mPa·s to <1000 mPa·s), and a vacuum of 0.02-0.04 MPa results in a bubble content of <0.1% (diameter <50μm). Curing at 120-150℃ for 1-2 hours forms a three-dimensional cross-linked structure, with a glass transition temperature (Tg) >130℃, extending the long-term operating temperature range to -40℃ to +125℃. A heat dissipation structure is formed on the surface of the preliminary package. This structure includes a heat dissipation substrate and heat dissipation fins. The heat dissipation substrate is made of copper and is bonded to the preliminary package using thermally conductive silicone with a thermal conductivity of not less than 4 W / (m·K). The heat dissipation fins are vertically mounted on the heat dissipation substrate. These fins are also made of copper, with a thickness of 0.15 mm-0.25 mm and a height of 3 mm-4 mm. The spacing between adjacent fins is 0.8 mm-1.2 mm, and the surface of the fins is coated with a graphene thermal coating. The copper substrate (thermal conductivity approximately 400 W / (m·K)) and the 4 W / (m·K) thermally conductive silicone (thickness 0.05-0.1 mm) form a low-resistance path, reducing the junction temperature by 15-20°C. The graphene coating (thickness 5-10 μm) improves radiative heat dissipation efficiency through phonon heat transfer, increasing the thermal emissivity from 0.03 (copper) to 0.85, and reducing the equivalent thermal resistance by approximately 30%. The pressure and temperature performance of the packaged miniature integrated sensor was tested using standard pressure and temperature sources to obtain its pressure-output voltage and temperature-output voltage curves. The curves were fitted using the least squares method to calculate the nonlinearity and hysteresis errors of the miniature integrated sensor. Based on the error calculation results, the miniature integrated sensor was calibrated by adjusting the parameters of its internal compensation circuit. After calibration, a 12μm-18μm thick polytetrafluoroethylene (PTFE) waterproof and corrosion-resistant coating was applied to the surface of the miniature integrated sensor. The pressure-voltage curve was fitted using the least squares method (R²>0.999), reducing the nonlinearity error from ±2%-3% to ±0.3%-0.5% and the hysteresis error from ±1.5% to ±0.2%-0.3%, with a reduction in hysteresis of over 80%.
[0010] Example 2 further optimizes the small integrated sensor packaging method provided in Example 1. Specifically, the processing power of the plasma cleaning technology is 100-200W. During the plasma cleaning process, the plasma density is controlled by adjusting the power of the radio frequency power supply, so that the organic contaminants on the surface of the small integrated sensor chip are decomposed and removed, while avoiding damage to the surface of the small integrated sensor chip. Furthermore, the temperature of the mixed solution during chemical cleaning is controlled at 20-30℃. Within this range, the chemical reaction rate between hydrofluoric acid and the metal oxides on the surface of the small integrated sensor chip is moderate, ensuring both the cleaning effect and preventing excessive corrosion of the chip surface due to excessively high temperatures. During the chemical cleaning process, a stirring device is used to agitate the mixed solution at a speed of 100-200 rpm, enhancing the contact between the cleaning solution and the surface of the small integrated sensor chip and improving cleaning efficiency. Furthermore, a coupling agent with a mass fraction of 1%-3% is added to the epoxy resin-based composite material. The coupling agent is a silane coupling agent, in which one end of its molecular structure reacts with the hydroxyl groups on the surface of the alumina ceramic particles, and the other end undergoes a cross-linking reaction with the epoxy resin molecules, thereby enhancing the interfacial bonding force between the alumina ceramic particles and the epoxy resin matrix and improving the overall mechanical properties and thermal stability of the encapsulation material.
[0011] Furthermore, in the vacuum injection molding process, a pressure of 0.1-0.3 MPa is applied to the encapsulation material during the injection molding process to eliminate air bubbles inside the encapsulation material, allowing the encapsulation material to more tightly wrap the small integrated sensor chip, while promoting the flow and filling of the encapsulation material in the mold, ensuring the integrity and uniformity of the package; and during the application of pressure, the pressure rise rate is controlled at 0.02-0.05 MPa / min to avoid sudden pressure changes that could damage the small integrated sensor chip.
[0012] Furthermore, the preparation method of the graphene heat dissipation coating is as follows: graphene powder is mixed with an organic solvent to prepare a solution with a concentration of 5-10 g / L. The organic solvent is N-methylpyrrolidone. During the mixing process, the graphene powder is dispersed in the solution for 30-60 minutes using an ultrasonic disperser at a frequency of 40 kHz to ensure that the graphene powder is uniformly dispersed in the solution. The solution is then sprayed onto the surface of the heat dissipation fins using a spraying process. During the spraying process, the moving speed of the spray gun is 5-10 cm / s and the spraying distance is 10-15 cm. The solution is then dried at 80-100℃ for 2-3 hours to allow the organic solvent to evaporate and form the graphene heat dissipation coating.
[0013] Furthermore, before using standard pressure and temperature sources for performance testing, the small integrated sensor is placed in a constant temperature and humidity environment for 2-4 hours. The temperature of the constant temperature and humidity environment is 25±2℃ and the humidity is 50±5%RH, so that the small integrated sensor reaches thermal and humidity equilibrium, eliminating the influence of environmental factors on the test results. During the placement process, the small integrated sensor is placed on an anti-static tray to prevent static electricity from interfering with the performance of the small integrated sensor. Furthermore, the compensation circuit includes resistors and capacitors. The miniature integrated sensor is calibrated by adjusting the resistance and capacitance values. During the calibration process, a digital multimeter is used to measure the output voltage of the miniature integrated sensor in real time. Based on the measurement results, the values of the resistors and capacitors are gradually adjusted to control the error between the output voltage of the miniature integrated sensor and the standard value within ±0.5%. The compensation circuit also includes an operational amplifier to amplify the weak signal from the miniature integrated sensor and improve the signal detection accuracy. Furthermore, before applying the PTFE waterproof and corrosion-resistant coating, the surface of the small integrated sensor is roughened using a sandblasting process. The sandblasting particles are alumina with a particle size of 50-100μm, the sandblasting pressure is 0.2-0.4MPa, and the sandblasting time is 1-3 minutes. The sandblasting process creates a micro-uneven structure on the surface of the small integrated sensor, increasing the mechanical bonding between the PTFE coating and the sensor surface and improving the adhesion of the coating. After the sandblasting process, high-pressure air is used to blow away the surface of the small integrated sensor to remove any residual sandblasting particles and debris. Furthermore, before preprocessing the small integrated sensor chip, a dicing process is also included. The dicing is performed using a laser dicing machine with a laser wavelength of 355nm, a laser power of 5-10W, and a scanning speed of 5-10mm / second. The laser dicing process divides the entire sensor wafer into individual small integrated sensor chips. During the dicing process, deionized water is used to cool and clean the dicing area to prevent the heat generated by the laser dicing from damaging the small integrated sensor chip, while also removing debris generated during the dicing process. Example 3 further optimizes the miniature integrated sensor packaging method provided in Example 1 or 2. Specifically, after the performance testing and calibration steps, it also includes a sealing test on the miniature integrated sensor. The sealing test uses a helium mass spectrometer leak detector, with a testing pressure of 0.1-0.2 MPa and a testing time of 5-10 minutes. During the test, the miniature integrated sensor is placed in a sealed testing chamber, helium gas is introduced into the testing chamber, and the concentration of helium gas leaking out of the testing chamber is detected by the helium mass spectrometer leak detector. When the detected helium gas concentration exceeds 1×10⁻⁻⁻⁶, the leak is considered complete. 6If the pressure is within a certain range (Pa・m³ / s), the small integrated sensor is considered unqualified for sealing; otherwise, it is considered qualified. Furthermore, the polytetrafluoroethylene (PTFE) waterproof and corrosion-resistant coating is applied using an electrostatic spraying process. The spraying voltage is 20-30kV, and the spraying distance is 15-20cm. During the spraying process, the PTFE powder becomes charged under the influence of a high-voltage electric field and adheres to the sensor surface to form a coating. During electrostatic spraying, the temperature of the spraying environment is controlled at 20-25℃, and the humidity at 40-60%RH to ensure the uniformity and quality of the coating. After spraying, the small integrated sensor is sintered at 350-400℃ to fully melt and solidify the PTFE coating, improving its density and waterproof and corrosion-resistant properties. Furthermore, after the initial package is formed by vacuum injection molding, the initial package is subjected to overflow removal. The overflow removal is carried out by milling. The milling cutter speed is 5000-8000 r / min, and the feed rate is 50-100 mm / min. During the milling process, cutting fluid is used to cool and lubricate the milling area. The cutting fluid is water-based with a concentration of 5-10% and a flow rate of 10-20 L / min. This prevents the heat generated during milling from deforming the initial package and removes the debris generated during milling, ensuring the machining accuracy and surface quality of the overflow removal.
[0014] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection, an electrical connection, or a connection that allows communication between them; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.
[0015] Obviously, the embodiments described above are merely some embodiments of the present invention, not all embodiments. The accompanying drawings show preferred embodiments of the present invention, but do not limit the patent scope of the present invention. The present invention can be implemented in many different forms; rather, these embodiments are provided to provide a more thorough and complete understanding of the disclosure of the present invention. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing specific embodiments, or make equivalent substitutions for some of the technical features. Any equivalent structures made using the content of this specification and drawings, directly or indirectly applied to other related technical fields, are similarly within the patent protection scope of this invention.
Claims
1. A method for packaging a small integrated sensor, characterized in that, Includes the following steps: A small integrated sensor chip is provided. The small integrated sensor chip is pre-treated by first activating the surface of the small integrated sensor chip using plasma cleaning technology with argon gas as the treatment gas for 3-5 minutes. Then, a combination of chemical cleaning and physical cleaning is used to remove impurities and contaminants from the surface of the small integrated sensor chip. The cleaning agent used for chemical cleaning is a mixed solution containing 8%-12% hydrofluoric acid and 12%-18% ethanol by volume. The physical cleaning uses ultrasonic cleaning with an ultrasonic frequency of 25kHz-35kHz for 8-12 minutes. After cleaning, the small integrated sensor chip is dried with high-purity nitrogen gas. An epoxy resin-based composite material is used as the encapsulation material, which is filled with 35%-45% alumina ceramic particles by mass. The small integrated sensor chip is encapsulated by a vacuum injection molding process. Before injection molding, the encapsulation mold is preheated to 60℃-80℃. The vacuum degree of the vacuum injection molding process is 0.02MPa-0.04MPa, and the injection temperature is 90℃-110℃. After injection molding, the chip is cured at 120℃-150℃ for 1-2 hours to form a preliminary encapsulation. A heat dissipation structure is provided on the surface of the preliminary package. The heat dissipation structure includes a heat dissipation substrate and heat dissipation fins. The heat dissipation substrate is made of copper and is bonded to the preliminary package with thermally conductive silicone with a thermal conductivity of not less than 4 W / (m·K). The heat dissipation fins are vertically arranged on the heat dissipation substrate. The heat dissipation fins are made of copper, with a thickness of 0.15 mm-0.25 mm, a height of 3 mm-4 mm, a spacing of 0.8 mm-1.2 mm between adjacent heat dissipation fins, and the surface of the heat dissipation fins is coated with a graphene heat dissipation coating. The pressure and temperature performance of the packaged miniature integrated sensor was tested using standard pressure and temperature sources to obtain the pressure-output voltage curve and temperature-output voltage curve of the miniature integrated sensor. The obtained curves were fitted using the least squares method to calculate the nonlinear error and hysteresis error of the miniature integrated sensor. Based on the error calculation results, the miniature integrated sensor was calibrated by adjusting the parameters of the compensation circuit inside the miniature integrated sensor. After calibration, a 12μm-18μm thick polytetrafluoroethylene waterproof and corrosion-resistant coating is applied to the surface of the small integrated sensor.
2. The method for packaging a small integrated sensor according to claim 1, characterized in that, The plasma cleaning technology has a processing power of 100-200W. During the plasma cleaning process, the plasma density is controlled by adjusting the power of the radio frequency power supply, so that organic pollutants on the surface of the small integrated sensor chip are decomposed and removed.
3. The method for packaging a small integrated sensor according to claim 1, characterized in that, The temperature of the mixed solution during the chemical cleaning process is controlled at 20-30℃; and during the chemical cleaning process, a stirring device is used to stir the mixed solution at a speed of 100-200 rpm.
4. The method for packaging a small integrated sensor according to claim 1, characterized in that, The epoxy resin-based composite material also contains a coupling agent with a mass fraction of 1%-3%. The coupling agent is a silane coupling agent, whose molecular structure has one end that reacts with the hydroxyl groups on the surface of alumina ceramic particles and the other end that undergoes a cross-linking reaction with epoxy resin molecules.
5. The method for packaging a small integrated sensor according to claim 1, characterized in that, In the vacuum injection molding process, a pressure of 0.1-0.3 MPa is applied to the encapsulation material during the injection molding process to remove air bubbles inside the encapsulation material; and during the application of pressure, the rate of pressure increase is controlled at 0.02-0.05 MPa / minute.
6. The method for packaging a small integrated sensor according to claim 1, characterized in that, The graphene heat dissipation coating is prepared by mixing graphene powder with an organic solvent to form a solution with a concentration of 5-10 g / L. The organic solvent is N-methylpyrrolidone. During the mixing process, the graphene powder is dispersed in the solution for 30-60 minutes at a frequency of 40 kHz using an ultrasonic disperser to ensure that the graphene powder is uniformly dispersed in the solution. The solution is then sprayed onto the surface of the heat dissipation fins using a spraying process. During the spraying process, the moving speed of the spray gun is 5-10 cm / s and the spraying distance is 10-15 cm. The solution is then dried at 80-100℃ for 2-3 hours to allow the organic solvent to evaporate and form the graphene heat dissipation coating.
7. The method for packaging a small integrated sensor according to claim 1, characterized in that, Before using standard pressure and temperature sources for performance testing, place the small integrated sensor in a constant temperature and humidity environment for 2-4 hours. The temperature of the constant temperature and humidity environment is 25±2℃ and the humidity is 50±5%RH, so that the small integrated sensor reaches thermal and humidity equilibrium. During the placement process, place the small integrated sensor on an anti-static tray.
8. The method for packaging a small integrated sensor according to claim 1, characterized in that, The compensation circuit includes resistors and capacitors. The miniature integrated sensor is calibrated by adjusting the resistance and capacitance values. During the calibration process, a digital multimeter is used to measure the output voltage of the miniature integrated sensor in real time. Based on the measurement results, the values of the resistors and capacitors are gradually adjusted to control the error between the output voltage of the miniature integrated sensor and the standard value within ±0.5%. The compensation circuit also includes an operational amplifier for amplifying the weak signal from the miniature integrated sensor.
9. The method for packaging a small integrated sensor according to claim 1, characterized in that, Before applying the polytetrafluoroethylene waterproof and corrosion-resistant coating, the surface of the small integrated sensor is roughened using a sandblasting process. The sandblasting particles are alumina with a particle size of 50-100μm, the sandblasting pressure is 0.2-0.4MPa, and the sandblasting time is 1-3 minutes. After sandblasting, the surface of the small integrated sensor is blew with high-pressure air to remove residual sandblasting particles and debris.
10. The method for packaging a small integrated sensor according to claim 1, characterized in that, Before preprocessing the small integrated sensor chip, the process also includes dicing the small integrated sensor chip. Dicing is performed using a laser dicing machine with a laser wavelength of 355nm, a laser power of 5-10W, and a scanning speed of 5-10mm / second. The laser dicing process divides the entire sensor wafer into individual small integrated sensor chips. During the dicing process, deionized water is used to cool and clean the diced area.