Electrochemical polishing and thinning device for wafer

Abstract

The invention relates to the technical field of polishing and thinning devices, in particular to a wafer electrochemical polishing and thinning device which comprises a processing box internally provided with a processing cavity, a lifting block is installed on the upper end face of the processing box, sliding bending rods are installed at the two ends of the lifting block, one ends of the two bending rods extend into the processing cavity, and the other ends of the two bending rods extend into the processing cavity. A bottom plate is installed between the two bending rods in the processing cavity, and the upper end face of the bottom plate is provided with a limiting assembly used for limiting the wafer; a lifting assembly is arranged on the upper end face of the treatment box. A moving assembly is further arranged on the upper end face of the lifting block. A stirring assembly is arranged in the treatment cavity; through the structure, the bottom plate and the wafer are driven by the moving assembly to reciprocate in the electrolyte, and when the bottom plate drives the wafer to move in the electrolyte, waste on the surface of the wafer can be taken away by the electrolyte, so that accumulation of the waste on the surface of the wafer can be avoided; and forming a barrier layer which affects the polishing and thinning of the wafer by the electrolyte.

Description

Technical Field

[0001] This invention relates to the field of polishing and thinning apparatus technology, and more specifically, to a wafer electrochemical polishing and thinning apparatus. Background Technology

[0002] Wafer electrochemical polishing and thinning equipment is a technology that uses the principle of electrochemical dissolution to perform precision planarization on the surface of wafers (the core substrates of semiconductor manufacturing, such as silicon, sapphire, silicon carbide, etc.). Its core is to remove the micro-roughness, damage layer or impurities on the wafer surface through the "anodic dissolution" process, and finally obtain a surface with ultra-high flatness (such as nanoscale roughness) and low damage. It is one of the key processes for wafer thinning and surface finishing in semiconductor manufacturing.

[0003] In existing wafer electrochemical polishing and thinning processes, the wafer remains stationary in the electrolyte. When the electrolyte undergoes an electrochemical reaction on the wafer surface, waste generated by the wafer accumulates on the surface and forms a barrier layer. This barrier layer affects the contact between different parts of the wafer and the subsequent electrolyte, resulting in varying contact amounts. This uneven contact causes the wafer surface to become uneven, thus affecting the polishing and thinning effect of the electrolyte on the wafer. Summary of the Invention

[0004] The purpose of this invention is to provide a wafer electrochemical polishing and thinning apparatus to solve the problems mentioned in the background art.

[0005] To achieve the above objectives, the present invention provides the following technical solution:

[0006] An electrochemical polishing and thinning device for wafers includes a processing box with a processing cavity inside. A lifting block is installed on the upper end face of the processing box. Sliding bending rods are installed at both ends of the lifting block. One end of each bending rod extends into the processing cavity. A base plate is installed between the two bending rods inside the processing cavity. A limiting component for limiting the wafer is provided on the upper end face of the base plate.

[0007] The upper surface of the processing box is equipped with a lifting component, which is used to drive the lifting block to move up and down;

[0008] The upper end face of the lifting block is also provided with a moving component, which is used to drive the two bent rods to move back and forth.

[0009] The processing chamber is equipped with a stirring assembly, which is used to stir the electrolyte in the processing chamber.

[0010] Preferably, a mounting bracket is installed on the upper end face of the processing box, and the side wall of the mounting bracket is provided with corresponding mounting grooves for corresponding bent rods to pass through. The side wall of the mounting bracket away from the processing chamber is provided with corresponding through rods that pass through both ends of the lifting block.

[0011] The lifting assembly includes a threaded rod that is rotatably mounted between two through rods and threaded through the lifting block. The rotation of the threaded rod drives the lifting block to move up and down.

[0012] Preferably, a movable plate is installed between the other ends of the two bent rods, and a movable groove is provided on the upper surface of the movable plate;

[0013] The moving component includes a lifting seat mounted on the upper surface of the lifting block, a rotating lifting disc mounted on the lower surface of the lifting seat, and a circular shaft with its lower end inserted into a moving slot mounted on the lower surface of the lifting disc near its edge. The rotation of the lifting disc drives the moving plate to reciprocate, thereby enabling the two bent rods to reciprocate.

[0014] Preferably, the limiting assembly includes a first limiting plate mounted on the upper surface of the base plate, a sliding second limiting plate mounted on the upper surface of the base plate, the second limiting plate sliding toward the first limiting plate to limit the wafer, and a fixing box mounted on the lower surface of the base plate. The fixing box has a fixing cavity, and a positioning element is provided in the fixing cavity. The positioning element is used to position the second limiting plate.

[0015] Preferably, the positioning component includes a fixing plate placed in the fixing cavity, a fixing block with its upper end penetrating the bottom plate is installed on the upper end surface of the fixing plate, and a fixing rod with its lower end penetrating the fixing box is installed on the lower end surface of the fixing plate. Both fixing rods are fitted with springs for pushing the fixing plate to move upward.

[0016] Preferably, a pressing rod with its upper end penetrating the bottom plate is threaded onto the upper end face of the fixing plate.

[0017] Preferably, a pull plate is installed on the lower end face of the two fixed rods, and a pull ring is installed on the lower end face of the pull plate.

[0018] Preferably, the upper end face of the base plate is provided with opposite T-shaped slots, and the lower end face of the second limiting plate is provided with opposite blocks that are engaged in the corresponding slots.

[0019] Preferably, the stirring assembly includes a rotating rod rotatably mounted inside the processing chamber and opposite to it, with a plurality of stirring rods mounted on the outer side wall of the rotating rod.

[0020] Preferably, a box is installed on the side wall of the processing box, and a cavity is opened in the box for inserting one end of two rotating rods. The rotating rods located in the cavity are each fitted with a synchronous pulley, and a synchronous belt is fitted between the two synchronous pulleys.

[0021] Compared with the prior art, the beneficial effects of the present invention are:

[0022] 1. This invention uses a moving component to drive two bending rods to reciprocate. The reciprocating movement of the two bending rods causes the base plate and the wafer to reciprocate in the electrolyte. When the base plate moves the wafer in the electrolyte, the waste material on the wafer surface is carried away by the electrolyte. Compared with the existing devices, this wafer electrochemical polishing and thinning device can avoid the accumulation of waste material on the wafer surface during actual use, thereby forming a barrier layer that affects the electrolyte's polishing and thinning of the wafer.

[0023] 2. In this invention, when the base plate is above the electrolyte, the second motor will drive the base plate to be in a state away from the mounting bracket. At this time, it is convenient for the staff to pick up and put down the wafer on the upper surface of the base plate.

[0024] 3. In this invention, the two ends of the first limiting plate are fixedly installed with limiting rods that are inserted into the base plate. When the two limiting rods are inserted into the base plate, the first limiting plate on the upper surface of the base plate is in a horizontal state, thereby avoiding the first limiting plate being in an inclined state when it is sleeved on the threaded shaft, which would affect the use of the first limiting plate.

[0025] 4. In this invention, by driving the stirring assembly to continuously stir the electrolyte in the processing chamber, the concentration difference of the electrolyte in the processing chamber can be avoided, which would lead to poor polishing and thinning effect of the electrolyte on the wafer, thereby improving the polishing and thinning effect of the electrolyte on the wafer.

[0026] 5. In this invention, by replacing the first limiting plate and the second limiting plate on the upper surface of the base plate, the replaced first limiting plate and the second limiting plate can limit wafers of different sizes, so that wafers of different sizes can be limited on the upper surface of the base plate.

[0027] 6. In this invention, when two rotating rods drive multiple stirring rods to stir the electrolyte in the processing chamber, the electrolyte located on both sides of the processing chamber is difficult to stir. At this time, the connecting plate is continuously raised and lowered by an electric push rod. The raising and lowering of the connecting plate drives the flipping plate to continuously rise and fall in the processing chamber through the connecting rod, so that the raised and lowered flipping plate can stir the electrolyte in the processing chamber and located on both sides, thereby better stirring of the electrolyte in the processing chamber and further reducing the occurrence of electrolyte concentration difference. Attached Figure Description

[0028] Figure 1 This is a schematic diagram of the structure of a wafer electrochemical polishing and thinning device according to the present invention.

[0029] Figure 2 This is a schematic diagram of the mounting bracket in this invention.

[0030] Figure 3 This is a schematic diagram of the structure of the movable plate in this invention.

[0031] Figure 4 This is a schematic diagram of the lifting circular plate in this invention.

[0032] Figure 5 This is a schematic diagram of the structure of the base plate in this invention.

[0033] Figure 6 This is a schematic diagram of the structure of the first limiting plate and the second limiting plate in this invention.

[0034] Figure 7 This is a half-sectional view of the fixing box in this invention.

[0035] Figure 8 This is a schematic diagram of the internal structure of the processing cavity in this invention.

[0036] Figure 9 This is a schematic diagram of the synchronous pulley and synchronous belt in this invention.

[0037] The meanings of the labels in the diagram are as follows:

[0038] 100. Processing box; 101. Processing chamber; 102. Drain pipe; 110. Mounting bracket; 111. First motor; 120. Bending rod; 130. Base plate; 140. Box body; 141. Third motor; 150. Electric push rod; 151. Support; 152. Connecting plate;

[0039] 200. Through rod; 210. Threaded rod; 220. Lifting block; 230. Lifting seat; 231. Second motor; 232. Lifting circular plate; 240. Moving plate; 250. First limiting plate; 251. Second limiting plate; 261. Slot; 262. Pressing rod; 271. Mounting slot;

[0040] 301. Moving slot;

[0041] 400, round shaft;

[0042] 500. Fixing block; 510. Nut; 520. Threaded shaft; 530. Fixing box;

[0043] 600. Limiting rod; 610. Locking block;

[0044] 700. Fixing plate; 710. Fixing rod; 720. Spring; 730. Pull plate; 731. Pull ring;

[0045] 800. Connecting rod; 810. Flipping plate; 820. Guide rod; 831. Rotating rod; 830. Stirring rod; 900. Synchronous belt; 910. Synchronous pulley. Detailed Implementation

[0046] To further understand the content of this invention, a detailed description of the invention will be provided in conjunction with the accompanying drawings and embodiments. It should be understood that the embodiments are merely illustrative and not limiting of the invention.

[0047] The following is in conjunction with the appendix Figures 1-9 This embodiment will be described in further detail.

[0048] like Figure 1 and Figure 2 An electrochemical polishing and thinning device for wafers in this embodiment includes a processing box 100 with a processing cavity 101 inside. A lifting block 220 is installed on the upper end face of the processing box 100. Sliding bending rods 120 are installed at both ends of the lifting block 220. One end of the two bending rods 120 extends into the processing cavity 101. A base plate 130 is installed between the two bending rods 120 in the processing cavity 101. A limiting component for limiting the wafer is provided on the upper end face of the base plate 130.

[0049] The upper surface of the processing box 100 is provided with a lifting component, which is used to drive the lifting block 220 to move up and down;

[0050] The upper end face of the lifting block 220 is also provided with a moving component, which is used to drive the two bent rods 120 to reciprocate.

[0051] The processing chamber 101 is equipped with a stirring assembly, which is used to stir the electrolyte in the processing chamber 101.

[0052] In this embodiment, the bending rod 120 and the processing box 100 are made of insulating material. A cathode plate is installed in the processing cavity 101. When electrolyte is poured into the processing cavity 101, the cathode plate is located in the electrolyte. Then, the wafer to be processed is placed on the upper surface of the base plate 130, and the wafer is limited by the limiting component on the upper surface of the base plate 130. At this time, the lifting block 220 is driven to move down by the lifting component. The downward movement of the lifting block 220 can drive the base plate 130 to move down through the bending rod 120, so that the base plate 130 and the wafer are both located in the electrolyte. Finally, the cathode of the power supply is connected to the cathode plate, and the anode of the power supply is connected to the base plate 130, so that the electrolyte can dissolve the protrusions on the surface of the wafer, thereby achieving polishing and thinning of the wafer surface.

[0053] In this process, when the electrolyte polishes and thins the surface of the wafer, the waste generated by the wafer dissolution will accumulate on the surface of the wafer. At this time, the two bending rods 120 are driven to move back and forth by the moving component. The two bending rods 120 move back and forth, which drives the base plate 130 and the wafer to move back and forth in the electrolyte. When the base plate 130 drives the wafer to move in the electrolyte, the waste on the wafer surface will be carried away by the electrolyte. Compared with the existing one, this wafer electrochemical polishing and thinning device can avoid the accumulation of waste on the wafer surface in actual use, thereby forming a barrier layer that affects the electrolyte's polishing and thinning of the wafer.

[0054] When the electrolyte polishes and thins the surface of the wafer, it can also drive the stirring component to continuously stir the electrolyte in the processing chamber 101, thereby avoiding the presence of a concentration difference in the electrolyte in the processing chamber 101, which would result in poor polishing and thinning effect of the electrolyte on the wafer.

[0055] In this process, after the wafer is polished and thinned in the electrolyte, the lifting assembly drives the lifting block 220 to move upward. The upward movement of the lifting block 220 drives the base plate 130 to move upward through the bending rod 120, so that the wafer on the upper surface of the base plate 130 can be positioned above the electrolyte. At this time, the power supply to the base plate 130 is released, and the limiting assembly is released from limiting the wafer.

[0056] In actual use, a drain pipe 102 connected to the processing chamber 101 is fixedly installed on the outer wall of the processing chamber 101. A solenoid valve is installed inside the drain pipe 102. When the solenoid valve is opened, the electrolyte in the processing chamber 101 can be discharged through the drain pipe 102.

[0057] like Figures 1-4 In this embodiment, a mounting bracket 110 is installed on the upper end face of the processing box 100. The side wall of the mounting bracket 110 is provided with mounting grooves 271 that are opposite to each other and allow corresponding bent rods 120 to pass through. The side wall of the mounting bracket 110 away from the processing cavity 101 is provided with through rods 200 that are opposite to each other and pass through both ends of the lifting block 220.

[0058] The lifting assembly includes a threaded rod 210 that is rotatably mounted between two through rods 200 and threaded through the lifting block 220. The rotation of the threaded rod 210 is used to drive the lifting block 220 to lift.

[0059] In this embodiment, the mounting groove 271 is arranged along the vertical direction of the mounting frame 110. The two ends of the threaded rod 210 rotate within the corresponding side wall of the mounting frame 110 via bearings. The two ends of the through rod 200 are fixedly installed within the corresponding side wall of the mounting frame 110. The through rod 200 limits the lifting block 220. When the threaded rod 210 rotates, it can drive the lifting block 220 to rise and fall. The rise and fall of the lifting block 220 drives the bent rod 120 to rise and fall along the mounting groove 271, thereby realizing the rise and fall of the base plate 130.

[0060] In actual use, the upper end face of the mounting bracket 110 is equipped with a first motor 111, and the output shaft of the first motor 111 is connected to the threaded rod 210, so that the threaded rod 210 can be driven to rotate by the first motor 111.

[0061] like Figure 1 , Figure 2 , Figure 3 and Figure 4 In this embodiment, a movable plate 240 is installed between the other ends of the two bent rods 120, and a movable groove 301 is provided on the upper surface of the movable plate 240.

[0062] The moving component includes a lifting seat 230 mounted on the upper surface of the lifting block 220. A rotating lifting circular plate 232 is mounted on the lower surface of the lifting seat 230. A circular shaft 400 with its lower end inserted into the moving groove 301 is mounted on the lower surface of the lifting circular plate 232 near its edge. The rotation of the lifting circular plate 232 drives the moving plate 240 to reciprocate, thereby enabling the two bent rods 120 to reciprocate.

[0063] In this embodiment, the moving groove 301 and the mounting groove 271 are perpendicular to each other. When the lifting circular plate 232 on the lower end face of the lifting seat 230 rotates, the rotation of the lifting circular plate 232 can drive the circular shaft 400 to move along the circumference of the lifting circular plate 232. The movement of the circular shaft 400 through the moving groove 301 can drive the moving plate 240 to move back and forth. The moving plate 240 drives the two bent rods 120 to move back and forth, thereby realizing that the base plate 130 drives the wafer to move back and forth in the electrolyte.

[0064] The upper end face of the lifting seat 230 is fixedly installed with a second motor 231. The output shaft of the second motor 231 passes through the lifting seat 230 and is connected to the lifting circular plate 232, so that the lifting circular plate 232 is installed on the lower end face of the lifting seat 230. At the same time, the second motor 231 can drive the lifting circular plate 232 to rotate.

[0065] In actual use, when the base plate 130 is above the electrolyte, the second motor 231 will drive the base plate 130 to be in a state away from the mounting bracket 110. At this time, it is convenient for the staff to pick up and put down the wafer on the upper surface of the base plate 130.

[0066] like Figure 2 , Figure 5 , Figure 6 and Figure 7 As shown, in this embodiment, the limiting component includes a first limiting plate 250 installed on the upper surface of the base plate 130, a sliding second limiting plate 251 installed on the upper surface of the base plate 130, the second limiting plate 251 sliding towards the first limiting plate 250 to limit the wafer, and a fixing box 530 installed on the lower surface of the base plate 130. The fixing box 530 has a fixing cavity, and a positioning member is provided in the fixing cavity. The positioning member is used to position the second limiting plate 251.

[0067] In this embodiment, the sidewall of the first limiting plate 250 is provided with a plurality of first limiting grooves, and the sidewall of the second limiting plate 251 is provided with a plurality of second limiting grooves. By placing the wafer in the corresponding first limiting groove, and then sliding the second limiting plate 251, the sidewalls of the first limiting groove and the second limiting groove are pressed against the sidewall of the wafer, thereby limiting the wafer on the upper surface of the base plate 130. Then, the position of the second limiting plate 251 is positioned by the positioning member, so that the second limiting plate 251 can continuously limit the wafer.

[0068] In actual use, the upper end face of the base plate 130 is provided with corresponding T-shaped slots 261, and the lower end face of the second limiting plate 251 is provided with corresponding locking blocks 610 that are locked into the corresponding slots 261. By locking the locking blocks 610 into the corresponding slots 261, the second limiting plate 251 can be slidably installed on the upper end face of the base plate 130.

[0069] like Figure 5 and Figure 7 As shown, in this embodiment, the positioning component includes a fixing plate 700 placed in the fixing cavity. A fixing block 500 with its upper end penetrating the bottom plate 130 is installed on the upper end surface of the fixing plate 700. A fixing rod 710 with its lower end penetrating the fixing box 530 is installed on the lower end surface of the fixing plate 700. Both fixing rods 710 are fitted with springs 720 for pushing the fixing plate 700 upward.

[0070] In this embodiment, after the second limiting plate 251 completes its movement, the spring 720 pushes the fixing plate 700 to move upward. The upward movement of the fixing plate 700 causes the upper end of the fixing block 500 to pass through the fixing plate 700, and the protruding end of the fixing block 500 abuts against the side wall of the second limiting plate 251, thereby positioning the second limiting plate 251 by the fixing block 500.

[0071] The upper end face of the fixing plate 700 is threaded with a pressing rod 262 that penetrates the bottom plate 130. When the pressing rod 262 is driven to move down, the pressing rod 262 can drive the fixing plate 700 to move down. The downward movement of the fixing plate 700 can drive the fixing block 500 to move down, so that the fixing block 500 is located inside the bottom plate 130, that is, the fixing block 500 releases the positioning of the second limiting plate 251.

[0072] Specifically, by replacing the first limiting plate 250 and the second limiting plate 251 on the upper end face of the base plate 130, the replaced first limiting plate 250 and the second limiting plate 251 can limit wafers of different sizes. A threaded shaft 520 that penetrates the first limiting plate 250 is fixedly installed on the upper end face of the base plate 130. A nut 510 is threaded on the through end of the threaded shaft 520. The nut 510 is used to press the first limiting plate 250 against the base plate 130, thereby realizing the installation of the first limiting plate 250 on the upper end face of the base plate 130. When the nut 510 is removed from the threaded shaft 520, the installation of the first limiting plate 250 on the upper end face of the base plate 130 can be released. At this time, the first limiting plate 250 can be replaced.

[0073] The first limiting plate 250 is fixedly installed with limiting rods 600 at both ends, which are inserted into the base plate 130 at the lower end. When the two limiting rods 600 are inserted into the base plate 130, the first limiting plate 250 on the upper surface of the base plate 130 is in a horizontal state, thereby preventing the first limiting plate 250 from being in an inclined state when it is sleeved on the threaded shaft 520, which would affect the use of the first limiting plate 250.

[0074] In actual use, a pull plate 730 is installed on the lower end face of the two fixing rods 710, and a pull ring 731 is installed on the lower end face of the pull plate 730. When the second limiting plate 251 needs to be replaced, the pressing rod 262 needs to be rotated to release the installation of the pressing rod 262 on the fixing plate 700. At this time, by pulling the pull ring 731, the pull ring 731 moves and drives the two fixing rods 710 to move through the pull plate 730. The two fixing rods 710 drive the fixing plate 700 and the fixing block 500 to move, so that the fixing block 500 is located inside the base plate 130. At this time, by sliding the second limiting plate 251 outward from the base plate 130, the installation of the second limiting plate 251 on the upper end face of the base plate 130 can be released. At the same time, the second limiting plate 251 can be replaced. After the replacement of the second limiting plate 251 is completed, the pressing rod 262 can be installed on the fixing plate 700.

[0075] like Figure 1 , Figure 8 and Figure 9 As shown, in this embodiment, the stirring assembly includes a rotating rod 831 rotatably mounted in the processing chamber 101 and opposite to it, and a plurality of stirring rods 830 are mounted on the outer side wall of the rotating rod 831.

[0076] In this embodiment, the two ends of the rotating rod 831 are rotatably mounted in the side wall of the processing chamber 101 through bearings. When the two rotating rods 831 rotate, the rotating rods 831 can drive multiple stirring rods 830 to rotate along the circumference of the rotating rods 831, thereby realizing the stirring rods 830 stirring the electrolyte in the processing chamber 101.

[0077] In actual use, a box 140 is installed on the side wall of the processing box 100. The box 140 has a cavity for inserting one end of two rotating rods 831. Each rotating rod 831 in the cavity is fitted with a synchronous pulley 910. A synchronous belt 900 is fitted between the two synchronous pulleys 910. A third motor 141 is installed on the outer wall of the box 140. The output shaft of the third motor 141 is fixedly connected to one of the two rotating rods 831, so that the third motor 141 can drive one of the rotating rods 831 to rotate. The rotation of the rotating rod 831 is driven by the cooperation of the synchronous pulley 910 and the synchronous belt 900, so that the other rotating rod 831 also rotates, thereby realizing that the two rotating rods 831 drive multiple stirring rods 830 to rotate.

[0078] like Figure 1 and Figure 8 As shown, in this embodiment, a support 151 is installed on the opposite side wall of the processing box 100. An electric push rod 150 is installed on the lower end face of the support 151. The output shaft of the electric push rod 150 passes through the support 151. A connecting plate 152 is fixedly installed on the output shaft of the electric push rod 150. A connecting rod 800 with its lower end extending into the processing cavity 101 is installed on the lower end face of the connecting plate 152. A flipping plate 810 is installed on the lower end face of the connecting rod 800.

[0079] In this embodiment, when the two rotating rods 831 drive multiple stirring rods 830 to stir the electrolyte in the processing chamber 101, the electrolyte located on both sides of the processing chamber 101 is difficult to stir. At this time, the connecting plate 152 is continuously raised and lowered by the electric push rod 150. The raising and lowering of the connecting plate 152 drives the flipping plate 810 to continuously rise and fall in the processing chamber 101 through the connecting rod 800, so that the rising and lowering flipping plate 810 can stir the electrolyte in the processing chamber 101 and located on both sides.

[0080] In actual use, guide rods 820 are installed in the processing cavity 101 on both sides of the flip plate 810 for the flip plate 810 to pass through. The guide rods 820 limit the flip plate 810, making the lifting and lowering of the flip plate 810 more stable.

[0081] In practical use, this embodiment first supplies power to the cathode plate in the electrolyte. Then, the wafer is placed on the upper surface of the base plate 130, and the second limiting plate 251 is pushed, so that the second limiting plate 251 and the first limiting plate 250 limit the wafer. When the second limiting plate 251 slides to the designated position, the fixing block 500 extends out of the upper surface of the base plate 130 and abuts against the side wall of the second limiting plate 251 to achieve positioning of the second limiting plate 251. At this time, power is supplied to the base plate 130, and the lifting block 220 is driven to move downward through the first motor 111. The lifting block 220 drives the base plate 130 into the electrolyte through the bending rod 120, and performs positioning of the wafer on the upper surface of the base plate 130. During the polishing and thinning process, the second motor 231 drives the base plate 130 and the wafer to reciprocate. Simultaneously, the third motor 141 and the electric push rod 150 drive the rotating rod 831 and the flipping plate 810 to stir the electrolyte in the processing chamber 101. After the polishing and thinning of the wafer is completed, the power supply to the base plate 130 is stopped, and the second motor 231, the third motor 141, and the electric push rod 150 stop working. The first motor 111 drives the lifting block 220 to move upward. The lifting block 220 drives the base plate 130 to move upward through the bending rod 120. Finally, the pressing rod 262 is moved downward, and the second limiting plate 251 is slid to pick up the polished and thinned wafer.

[0082] In summary, the above description is only a preferred embodiment of the present invention. All equivalent changes and modifications made within the scope of the claims of the present invention should be covered by the present invention.

Claims

1. A wafer electrochemical polishing and thinning apparatus, comprising a processing chamber (100) with a processing cavity (101) inside, characterized in that: A lifting block (220) is installed on the upper end face of the processing box (100). Sliding bending rods (120) are installed at both ends of the lifting block (220). One end of the two bending rods (120) extends into the processing cavity (101). A base plate (130) is installed between the two bending rods (120) in the processing cavity (101). A limiting component for limiting the wafer is provided on the upper end face of the base plate (130). The upper surface of the processing box (100) is provided with a lifting component, which is used to drive the lifting block (220) to move up and down; The upper end face of the lifting block (220) is also provided with a moving component, which is used to drive the two bent rods (120) to reciprocate; The processing chamber (101) is equipped with a stirring assembly, which is used to stir the electrolyte in the processing chamber (101).

2. The wafer electrochemical polishing and thinning apparatus according to claim 1, characterized in that: A mounting bracket (110) is installed on the upper end face of the processing box (100). The side wall of the mounting bracket (110) is provided with mounting grooves (271) that are opposite to each other and allow corresponding bent rods (120) to pass through. The side wall of the mounting bracket (110) away from the processing cavity (101) is provided with through rods (200) that are opposite to each other and pass through both ends of the lifting block (220). The lifting assembly includes a threaded rod (210) rotatably mounted between two through rods (200) and threaded through the lifting block (220). The threaded rod (210) rotates to drive the lifting block (220) to lift.

3. The wafer electrochemical polishing and thinning apparatus according to claim 2, characterized in that: A movable plate (240) is installed between the other ends of the two bent rods (120), and a movable groove (301) is provided on the upper surface of the movable plate (240); The moving component includes a lifting seat (230) mounted on the upper surface of the lifting block (220), a rotating lifting disc (232) mounted on the lower surface of the lifting seat (230), and a circular shaft (400) with its lower end inserted into the moving groove (301) mounted on the lower surface of the lifting disc (232) near the edge. The rotation of the lifting disc (232) drives the moving plate (240) to reciprocate, thereby enabling the two bent rods (120) to reciprocate.

4. The wafer electrochemical polishing and thinning apparatus according to claim 1, characterized in that: The limiting assembly includes a first limiting plate (250) installed on the upper surface of the base plate (130), a sliding second limiting plate (251) installed on the upper surface of the base plate (130), the second limiting plate (251) sliding towards the first limiting plate (250) to limit the wafer, and a fixing box (530) installed on the lower surface of the base plate (130), a fixing cavity is provided in the fixing box (530), and a positioning component is provided in the fixing cavity. The positioning component is used to position the second limiting plate (251).

5. The wafer electrochemical polishing and thinning apparatus according to claim 4, characterized in that: The positioning component includes a fixing plate (700) placed in the fixing cavity. A fixing block (500) with its upper end penetrating the bottom plate (130) is installed on the upper end surface of the fixing plate (700). A fixing rod (710) with its lower end penetrating the fixing box (530) is installed on the lower end surface of the fixing plate (700). Both fixing rods (710) are fitted with springs (720) for pushing the fixing plate (700) to move upward.

6. The wafer electrochemical polishing and thinning apparatus according to claim 4, characterized in that: A pressing rod (262) with its upper end penetrating the base plate (130) is threaded onto the upper end face of the fixing plate (700).

7. The wafer electrochemical polishing and thinning apparatus according to claim 6, characterized in that: Pull plates (730) are installed on the lower end faces of the two fixed rods (710), and pull rings (731) are installed on the lower end faces of the pull plates (730).

8. The wafer electrochemical polishing and thinning apparatus according to claim 4, characterized in that: The upper end face of the base plate (130) is provided with opposite slots (261) with a cross-section in the shape of T, and the lower end face of the second limiting plate (251) is provided with opposite blocks (610) that are inserted into the corresponding slots (261).

9. The wafer electrochemical polishing and thinning apparatus according to claim 1, characterized in that: The stirring assembly includes a rotating rod (831) rotatably mounted inside and opposite the processing chamber (101), and a plurality of stirring rods (830) are mounted on the outer side wall of the rotating rod (831).

10. The wafer electrochemical polishing and thinning apparatus according to claim 9, characterized in that: A box (140) is installed on the side wall of the processing box (100). A cavity is opened in the box (140) for inserting one end of two rotating rods (831). The rotating rods (831) located in the cavity are fitted with synchronous pulleys (910), and a synchronous belt (900) is fitted between the two synchronous pulleys (910).

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