A method, apparatus, electronic device, and readable storage medium for detecting residual magnetism.

By generating a calibration magnetization curve and using a short-pulse-width test excitation pulse to detect the remanent magnetization state of the magnetic shielding layer, the problem of evaluating the magnetization characteristics in large magnetic shielding devices is solved, and efficient monitoring of the remanent magnetization state is achieved.

CN120972060BActive Publication Date: 2026-01-30杭州极弱磁场国家重大科技基础设施研究院
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Patent Information

Application Number
CN202511510621.9
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2025-10-22
Publication Date
2026-01-30
Estimated Expiration
2045-10-22

AI Technical Summary

Technical Problem

The shielding layer of a large magnetic shielding device is difficult to effectively assess its magnetization characteristics and remanent magnetization state in a long-term magnetic field environment, which leads to difficulties in the engineering construction and acceptance process.

Method used

By acquiring the calibration magnetization curve and utilizing the response data of calibration and test excitation pulses, the correlation between surface remanent magnetization changes, voltage changes, and current changes is established, generating the calibration magnetization curve. The remanent magnetization state of the target magnetic shielding layer is then detected using short-pulse-width test excitation pulses.

Benefits of technology

It enables rapid and accurate determination of the current residual magnetism state of the magnetic shielding layer, improves the efficiency of magnetic shielding status monitoring during the construction and acceptance of magnetic shielding devices, and reduces interference with the original magnetization state.

✦ Generated by Eureka AI based on patent content.

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Abstract

This disclosure relates to the field of magnetic shielding technology, and proposes a method, apparatus, electronic device, and readable storage medium for detecting the residual magnetism state. The method includes: acquiring a calibration magnetization curve, which is generated based on recorded response data of the target magnetic shielding layer to a calibration excitation pulse, and includes the correlation between surface residual magnetism change curves, voltage change curves, and current change curves; transmitting a test excitation pulse to the target magnetic shielding layer to acquire test voltage data and test current data; wherein the test pulse width of the test excitation pulse is less than a preset proportion of the calibration pulse width of the calibration excitation pulse; and comparing the test voltage data and test current data with the calibration magnetization curve to determine the current residual magnetism state of the target magnetic shielding layer. The technical solutions provided by one or more embodiments of this disclosure can effectively detect the residual magnetism state of the magnetic shielding layer in a magnetic shielding device.
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Description

Technical Field

[0001] This disclosure relates to the field of magnetic shielding technology, specifically to a method, apparatus, electronic device, and readable storage medium for detecting residual magnetism. Background Technology

[0002] Magnetic shielding devices are facilities used to reduce interference from external magnetic fields on internal equipment or to prevent leakage of internal magnetic fields. Common magnetic shielding devices include large-volume magnetic shielding rooms and magnetic shielding chambers. During use, the shielding layer of a magnetic shielding device may become magnetized due to prolonged exposure to a magnetic field environment. Therefore, the shielding layer of large magnetic shielding devices generally needs to be demagnetized to achieve optimal performance.

[0003] In the construction of large-scale magnetic shielding devices, soft magnetic alloy sheets are typically used as the magnetic shielding layer components, and a large number of these sheets are assembled to form the shielding layer. Due to the combination of multiple materials, complex installation processes, and the presence of openings and perforations, it is often difficult to effectively assess the magnetization characteristics and remanence of the soft magnetic alloy sheets. This has become a major challenge in the construction and acceptance of large-scale magnetic shielding devices. Summary of the Invention

[0004] In view of this, one or more embodiments of this disclosure provide a method, apparatus, electronic device and readable storage medium for detecting residual magnetism, which can effectively detect the residual magnetism of the magnetic shielding layer in a magnetic shielding device.

[0005] In a first aspect, this disclosure provides a method for detecting the remanent magnetization state. The method includes: acquiring a calibration magnetization curve, which is generated based on the response record data of the target magnetic shielding layer to a calibration excitation pulse, and includes the correlation and correspondence between the surface remanent magnetization change curve, the voltage change curve, and the current change curve; for the target magnetic shielding layer, transmitting a test excitation pulse to acquire test voltage data and test current data; wherein the test pulse width of the test excitation pulse is less than a preset ratio of the calibration pulse width of the calibration excitation pulse, and both the calibration excitation pulse and the test excitation pulse are square wave pulses; comparing the test voltage data and the test current data with the calibration magnetization curve to determine the current remanent magnetization state of the target magnetic shielding layer.

[0006] Secondly, this disclosure provides a residual magnetism state detection device, which includes: an information acquisition unit for acquiring a calibration magnetization curve, the calibration magnetization curve being generated based on the response record data of the target magnetic shielding layer to a calibration excitation pulse, the calibration magnetization curve including the correlation and correspondence between the surface residual magnetism change curve, the voltage change curve, and the current change curve; a pulse testing unit for transmitting a test excitation pulse to the target magnetic shielding layer and acquiring test voltage data and test current data; wherein the test pulse width of the test excitation pulse is less than a preset ratio of the calibration pulse width of the calibration excitation pulse, and both the calibration excitation pulse and the test excitation pulse are square wave pulses; and a state analysis unit for comparing the test voltage data and the test current data with the calibration magnetization curve to determine the current residual magnetism state of the target magnetic shielding layer.

[0007] Thirdly, this disclosure provides an electronic device, which includes a memory and a processor. The memory is used to store a computer program, and when the computer program is executed by the processor, it implements the residual magnetism state detection method of the first aspect described above.

[0008] Fourthly, this disclosure provides a computer-readable storage medium for storing a computer program, which, when executed by a processor, implements the remanent magnetization state detection method of the first aspect described above.

[0009] The technical solutions provided in one or more embodiments of this disclosure pre-calibrate the correlation between the surface remanence curve of the soft magnetic alloy plate and the voltage and current change curves using calibration excitation pulses, thus forming a reliable calibration magnetization curve. In the actual testing phase, by emitting shorter pulse width test excitation pulses to the target magnetic shielding layer, test voltage and current data can be detected and acquired. By comparing the test voltage and current data with the pre-generated calibration magnetization curve, the current remanence state of the target magnetic shielding layer can be quickly and accurately determined.

[0010] This disclosure provides a technical solution through one or more embodiments, which pre-constructs a reference magnetization curve of the magnetic shielding layer under test under various operating conditions using a pulse injection method. After further calibrating the reference magnetization curve using the surface remanent magnetization detection results of a magnetic sensor, a calibration magnetization curve can be generated. Once the magnetic shielding layer under test is actually put into use, the remanent magnetization state can be conveniently detected using only a test excitation pulse with a pulse width much smaller than the calibration excitation pulse. At the cost of minimal magnetization, the current remanent magnetization state of complex soft magnetic alloy plate structures can be quickly determined, enabling monitoring of the magnetic shielding state during the construction and acceptance process of magnetic shielding devices. Attached Figure Description

[0011] The features and advantages of the embodiments of this disclosure will be more clearly understood by referring to the accompanying drawings, which are illustrative and should not be construed as limiting the present disclosure in any way. In the drawings:

[0012] Figure 1 A schematic diagram illustrating the steps of a method for detecting residual magnetism in one embodiment of this disclosure is shown.

[0013] Figure 2 A schematic diagram showing the correlation between a voltage change curve and a current change curve in one embodiment of this disclosure is illustrated.

[0014] Figure 3 A schematic diagram of the excitation process of a test excitation pulse according to one embodiment of the present disclosure is shown;

[0015] Figure 4 This diagram illustrates a data analysis method for detecting residual magnetism in one embodiment of the present disclosure.

[0016] Figure 5 This diagram illustrates a data analysis method for detecting residual magnetism in yet another embodiment of the present disclosure.

[0017] Figure 6 This diagram illustrates an application scenario of a residual magnetism detection method according to one embodiment of the present disclosure.

[0018] Figure 7 A schematic diagram of a calibration process for calibrating a magnetization curve is shown in one embodiment of this disclosure;

[0019] Figure 8 A schematic diagram of the functional modules of a residual magnetism state detection device according to one embodiment of the present disclosure is shown.

[0020] Figure 9 A schematic diagram of the functional modules of another residual magnetism state detection device according to one embodiment of the present disclosure is shown.

[0021] Figure 10 A schematic diagram of the structure of an electronic device according to one embodiment of the present disclosure is shown. Detailed Implementation

[0022] To make the objectives, technical solutions, and advantages of the embodiments of this disclosure clearer, the technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this disclosure, and not all of them. Based on the embodiments of this disclosure, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this disclosure.

[0023] It should be noted that, in the description of this disclosure, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. The terms "first," "second," etc., used in this application are used to distinguish similar objects and are not used to describe a specific order or sequence.

[0024] Please see Figure 1 The residual magnetism detection method provided in one embodiment of this disclosure may include the following steps.

[0025] S1: Obtain the calibration magnetization curve. The calibration magnetization curve is generated based on the response data of the target magnetic shielding layer to the calibration excitation pulse. The calibration magnetization curve includes the correlation and correspondence between the surface remanent magnetization change curve, voltage change curve, and current change curve.

[0026] In this embodiment, the target magnetic shielding layer can be composed of magnetic shielding material, fixing profile, supporting mesh shell, and fasteners. The magnetic shielding material includes, but is not limited to, metallic materials, alloy materials, and composite materials. For a target magnetic shielding layer with a specific structure and size, a calibration excitation pulse can be applied in advance to collect response recording data. The response recording data includes, but is not limited to, the voltage data of the calibration excitation pulse, the current data of the calibration excitation pulse, and the surface remanent magnetization data of the target magnetic shielding layer. The surface remanent magnetization data can include either the inner surface remanent magnetization data or the outer surface remanent magnetization data of the magnetic shielding layer.

[0027] In this embodiment, the response recording data are feedback data collected on the target magnetic shielding layer in response to the applied calibration excitation pulse. Using the calibration excitation pulse as a connecting bridge, the correlation between these response recording data can be established, generating calibration magnetization curves. For example, using the pulse time information of the calibration excitation pulse as a unified time reference, surface remanent magnetization change curves, voltage change curves, and current change curves are plotted. Then, based on this time reference, the three change curves are correlated. Theoretically, if the calibration excitation pulse can fully saturate the target magnetic shielding layer in both positive and negative magnetic directions, then when the excitation pulse remains constant, the measured current change curve for each pulse cycle should be the same, and the measured surface remanent magnetization change curve for each pulse cycle should also be the same. Furthermore, the current change curve and the surface remanent magnetization change curve correspond to each other. It should be noted that the surface remanent magnetization change curve can be the inner surface remanent magnetization change curve of the magnetic shielding layer, the outer surface remanent magnetization change curve of the magnetic shielding layer, or a combination of the inner and outer surface remanent magnetization change curves.

[0028] In this embodiment, with the material structure and deployment method (e.g., the number of coil turns) of the target magnetic shielding layer remaining unchanged, the calibration magnetization curve of the target magnetic shielding layer only needs to be determined once in advance. This calibration magnetization curve can be reused, ensuring the efficiency of residual magnetism detection during the actual use of the target magnetic shielding layer.

[0029] In some implementations, before obtaining the calibration magnetization curve, a calibration excitation pulse can be applied to the target magnetic shielding layer; while obtaining the calibration voltage data of the target magnetic shielding layer in response to the calibration excitation pulse, a voltage change curve can be determined based on the calibration voltage data; while obtaining the calibration current data of the target magnetic shielding layer in response to the calibration excitation pulse, a current change curve can be determined based on the calibration current data; while obtaining the calibration remanent magnetization state data of the target magnetic shielding layer in response to the calibration excitation pulse, a surface remanent magnetization change curve can be determined based on the calibration remanent magnetization state data; using the time information of the calibration excitation pulse, a correlation and correspondence relationship can be established among the surface remanent magnetization change curve, the voltage change curve, and the current change curve.

[0030] In a practical application example, please refer to Figure 2 , Figure 2 The horizontal axis in the diagram represents the pulse time axis of the calibration excitation pulse. Figure 2 The solid line waveform in the figure represents the voltage change curve. Figure 2 The dashed waveform in the image represents the current change curve. According to... Figure 2 This allows us to obtain the voltage value, pulse width, and current response curve at the corresponding pulse moment of the calibration excitation pulse. By splitting the calibration excitation pulse, we can obtain the current feedback of the target magnetic shielding layer under the same voltage but different pulse widths. By comparing the current feedback value with the calibration magnetization curve, we can determine the magnetization state of the target magnetic shielding layer and thus evaluate its remanence. It is important to emphasize that this method is an active injection method. Energy injection inevitably causes a change in the magnetization state of the test object (i.e., the target magnetic shielding layer). Therefore, to fully reduce the interference of pulse excitation on the original magnetization state of the test object, the pulse width of the test excitation pulse should differ from the pulse width of the original calibration excitation pulse by at least three orders of magnitude.

[0031] In some implementations, acquiring calibration remanent magnetization state data of the target magnetic shielding layer in response to a calibration excitation pulse, and determining the surface remanent magnetization change curve based on the calibration remanent magnetization state data, includes: using the calibration excitation pulse to make the target magnetic shielding layer complete multiple magnetic saturation cycles, the magnetic saturation cycles including positive saturation cycles and negative saturation cycles; acquiring single-point remanent magnetization state data of multiple surface observation points of the target magnetic shielding layer within the magnetic saturation cycles; generating single-point remanent magnetization change curves based on the single-point remanent magnetization state data; and determining the surface remanent magnetization change curve based on the fitting results of multiple single-point remanent magnetization change curves.

[0032] Specifically, for a particular magnetic shielding device, a calibration excitation pulse can be applied to it, causing the magnetic shielding layer material of the device to repeatedly undergo positive and negative saturation. During this process, voltage and current data and remanence at multiple points on the shielding layer surface are continuously monitored, resulting in multiple remanence curves of the shielding layer surface as it undergoes positive and negative saturation processes. By fitting these multiple surface remanence curves for various positive and negative saturation processes, a single surface remanence curve associated with the positive and negative saturation processes can be obtained. Correlation between the fitted surface remanence curve and the voltage and current change curves yields the complete calibration magnetization curve under the calibration excitation pulse. By utilizing the fitting results of multiple single-point remanence curves, the surface remanence curve is determined, reducing measurement errors and increasing the reliability of the surface remanence curve.

[0033] S2: For the target magnetic shielding layer, transmit test excitation pulses to acquire test voltage and test current data; wherein, the test pulse width of the test excitation pulse is less than the preset ratio of the calibration pulse width of the calibration excitation pulse, and both the calibration excitation pulse and the test excitation pulse are square wave pulses.

[0034] In this embodiment, by emitting test excitation pulses to the target magnetic shielding layer, test voltage and test current data can be detected and acquired. By comparing the test voltage and test current data with a pre-generated calibration magnetization curve, the current remanent magnetization state of the target magnetic shielding layer can be determined quickly and accurately.

[0035] In this embodiment, the energy injection of the test excitation pulse inevitably causes a change in the magnetization state of the test object (i.e., the target magnetic shielding layer). Therefore, in order to fully reduce the interference of the test excitation pulse on the original magnetization state of the test object, the test pulse width should be smaller than a preset ratio of the calibration pulse width. For example, the pulse width of the test excitation pulse should differ from the pulse width of the calibration excitation pulse by at least three orders of magnitude.

[0036] In some embodiments, for a target magnetic shielding layer, a test excitation pulse is emitted to acquire test voltage data and test current data, including: for the target magnetic shielding layer, a first test pulse is emitted to acquire first voltage data and first current data; based on the first voltage data and first current data, the target polarity of the target magnetic shielding layer is determined; if the target polarity is the same as the pulse polarity of the first test pulse, a second test pulse is emitted to acquire second voltage data and second current data, wherein the voltage excitation direction of the second test pulse is the same as that of the first test pulse; if the target polarity is opposite to that of the pulse polarity of the first test pulse, a third test pulse is emitted to acquire third voltage data and third current data, wherein the voltage excitation direction of the third test pulse is opposite to that of the first test pulse.

[0037] In some implementations, a first current slope can be determined based on first voltage data and first current data; a second current slope can be determined based on third voltage data and third current data; it is determined whether the second current slope is reversed relative to the first current slope; if no slope reversal occurs, the pulse parameters of the third test pulse are adjusted.

[0038] Specifically, please refer to Figure 3 Since the original remanent magnetization polarity of the target magnetic shielding layer is unknown, a short-width first test pulse can be applied for polarity calibration. Polarity calibration can be achieved by comparing the current change slope with the voltage polarity. For example, if both the current change slope and voltage polarity are positive, or both are negative, the first test pulse can be considered to have the same remanent magnetization polarity; otherwise, it can be considered to have the opposite polarity. If the first test pulse has the same remanent magnetization polarity, a second test pulse can be applied to continue detecting the remanent magnetization result of the target magnetic shielding layer; if the first test pulse has the opposite polarity, the excitation direction of the test pulse can be adjusted, and a third test pulse with a voltage excitation direction opposite to that of the first test pulse can be applied. Furthermore, after applying the third test pulse, if the current slope shows the expected reversal phenomenon, the remanent magnetization state of the target magnetic shielding layer can be detected, and the remanent magnetization result can be output. If the current slope does not show the expected reversal phenomenon, the pulse parameters of the third test pulse should be readjusted.

[0039] S3: Compare the test voltage and test current data with the calibration magnetization curve to determine the current remanent magnetization state of the target magnetic shielding layer.

[0040] In this embodiment, measurement feature points and measurement feature curves can be determined based on test voltage and test current data. By comparing the measurement feature points and measurement feature curves with a pre-generated calibration magnetization curve, the current remanent magnetization state of the target magnetic shielding layer can be quickly and accurately determined, yielding the numerical value and direction of the remanent magnetization state of the target magnetic shielding layer.

[0041] In some implementations, comparing the first voltage data and the first current data with the calibration magnetization curve can determine a first current reference point; comparing the second voltage data and the second current data with the calibration magnetization curve can determine a second current reference point; based on the first current reference point and the second current reference point, a target current curve can be determined; and based on the comparison result between the target current curve and the calibration magnetization curve, the current remanent magnetization state of the target magnetic shielding layer can be determined.

[0042] In a practical application example, please refer to Figure 4When the target polarity of the magnetic shielding layer is the same as the pulse polarity of the first test pulse, the starting point of the first current data, which is also the first current reference point A, corresponds to the original remanent magnetization state of the target magnetic shielding layer. After applying the second test pulse, the ending point of the second current data, which is also the second current reference point B, corresponds to the remanent magnetization state of the target magnetic shielding layer after the test. By matching the target current curve of segment AB with the calibration magnetization curve, the current remanent magnetization state of the target magnetic shielding layer can be accurately determined.

[0043] In some implementations, comparing the first voltage data and the first current data with the calibration magnetization curve can determine the first current reference point and the first current curve; comparing the third voltage data and the third current data with the calibration magnetization curve can determine the third current reference point and the second current curve; based on the first current reference point, the first current curve, the third current reference point, and the second current curve, the target current curve can be determined; and based on the comparison result between the target current curve and the calibration magnetization curve, the current remanent magnetization state of the target magnetic shielding layer can be determined.

[0044] In a practical application example, please refer to Figure 5 When the target polarity of the magnetic shielding layer is opposite to the pulse polarity of the first test pulse, the starting point of the first current data, which is also the first current reference point A, corresponds to the original remanent magnetization state of the target magnetic shielding layer. The ending point of the first current data (which is also the starting point of the third current data), which is also the intermediate current reference point C, corresponds to the intermediate remanent magnetization state of the target magnetic shielding layer. The current curve in segment AC can be called the first current curve. After adjusting the application of the third test pulse, the ending point of the third current data, which is also the third current reference point D, corresponds to the remanent magnetization state of the target magnetic shielding layer after the test. The current curve in segment CD can be called the second current curve. By integrating the first current reference point A, the first current curve AC, the third current reference point D, and the second current curve CD, the target current curve in segment AD can be obtained. By matching the target current curve in segment AD with the calibration magnetization curve, the current remanent magnetization state of the target magnetic shielding layer can be accurately determined.

[0045] Please see Figure 6 The present disclosure provides a method for detecting residual magnetism in one embodiment, which can be achieved by... Figure 6 The aforementioned device is applied and implemented.

[0046] In this embodiment, the remanence state detection device detects a magnetically shielded plate (typically permalloy) with a wound coil. The device consists of a controller, a pulse excitation device, a coil, a pulse voltage and current acquisition module, a signal acquisition processor, and a surface remanence acquisition module used only during the calibration phase. For soft magnetic alloy plates with specific structures and dimensions, the remanence state detection device can repeat its operation after completing one waveform calibration, provided the number of coil turns and their arrangement remain unchanged. When factors such as the number of coil turns and their arrangement change, the standard curve should be recalibrated to ensure accurate measurement. It should be noted that the surface remanence acquisition module of this remanence state detection device can receive remanence detection results provided by an external device; that is, the device only needs to obtain data on the change in surface remanence of the soft magnetic alloy plate with pulse excitation to complete system curve calibration.

[0047] In this embodiment, please refer to Figure 7 This paper provides a calibration procedure for a remanence state detection device. Since the structure, size, and coil turn arrangement of the plate all affect the test results, parameter curve calibration is required for the target object. First, for a soft magnetic alloy plate with fixed parameters such as plate structure, size, and coil turn count, an excitation pulse is applied to continuously magnetize it until it reaches saturation. Then, the pulse polarity is switched to reverse the saturation direction, thus completing multiple cycles of positive and negative saturation excitation. During this process, the pulse voltage, pulse current, and the change in remanence on the surface of the test object as a function of the pulse excitation are recorded. The polarity of these data is then calculated to obtain a current change curve and a remanence change curve within a complete cycle, along with the pulse voltage and pulse width data for achieving these curves. Based on these data curves and calibration with the remanence change curve, the complete magnetization curve of the test object under pulse excitation can be obtained.

[0048] The technical solutions provided in one or more embodiments of this disclosure pre-calibrate the correlation between the surface remanence curve of the soft magnetic alloy plate and the voltage and current change curves using calibration excitation pulses, thus forming a reliable calibration magnetization curve. In the actual testing phase, by emitting shorter pulse width test excitation pulses to the target magnetic shielding layer, test voltage and current data can be detected and acquired. By comparing the test voltage and current data with the pre-generated calibration magnetization curve, the current remanence state of the target magnetic shielding layer can be quickly and accurately determined.

[0049] This disclosure provides a technical solution through one or more embodiments, which pre-constructs a reference magnetization curve of the magnetic shielding layer under test under various operating conditions using a pulse injection method. After further calibrating the reference magnetization curve using the surface remanent magnetization detection results of a magnetic sensor, a calibration magnetization curve can be generated. Once the magnetic shielding layer under test is actually put into use, the remanent magnetization state can be conveniently detected using only a test excitation pulse with a pulse width much smaller than the calibration excitation pulse. At the cost of minimal magnetization, the current remanent magnetization state of complex soft magnetic alloy plate structures can be quickly determined, enabling monitoring of the magnetic shielding state during the construction and acceptance process of magnetic shielding devices.

[0050] Please see Figure 8 This disclosure also provides a residual magnetism detection device, which includes:

[0051] The information acquisition unit 100 is used to acquire the calibration magnetization curve. The calibration magnetization curve is generated based on the response record data of the target magnetic shielding layer to the calibration excitation pulse. The calibration magnetization curve includes the correlation and correspondence between the surface remanent magnetization change curve, the voltage change curve, and the current change curve.

[0052] The pulse test unit 200 is used to emit test excitation pulses to the target magnetic shielding layer and acquire test voltage data and test current data; wherein, the test pulse width of the test excitation pulse is less than a preset ratio of the calibration pulse width of the calibration excitation pulse, and both the calibration excitation pulse and the test excitation pulse are square wave pulses;

[0053] The state analysis unit 300 is used to compare the test voltage data and test current data with the calibration magnetization curve to determine the current remanent magnetization state of the target magnetic shielding layer.

[0054] In one implementation, please refer to Figure 9 The remanence state detection device also includes a pulse calibration unit 400. This pulse calibration unit 400 is used to: apply a calibration excitation pulse to the target magnetic shielding layer; acquire calibration voltage data of the target magnetic shielding layer in response to the calibration excitation pulse, and determine a voltage change curve based on the calibration voltage data; acquire calibration current data of the target magnetic shielding layer in response to the calibration excitation pulse, and determine a current change curve based on the calibration current data; acquire calibration remanence state data of the target magnetic shielding layer in response to the calibration excitation pulse, and determine a surface remanence change curve based on the calibration remanence state data; and establish a correlation relationship between the surface remanence change curve, the voltage change curve, and the current change curve using the time information of the calibration excitation pulse.

[0055] In one embodiment, the pulse calibration unit 400 is further configured to: use a calibration excitation pulse to enable the target magnetic shielding layer to complete multiple magnetic saturation cycles, the magnetic saturation cycles including positive saturation cycles and negative saturation cycles; acquire single-point remanent magnetization state data of multiple surface observation points of the target magnetic shielding layer within the magnetic saturation cycles; generate single-point remanent magnetization change curves based on the single-point remanent magnetization state data; and determine the surface remanent magnetization change curves based on the fitting results of multiple single-point remanent magnetization change curves.

[0056] In one embodiment, the pulse testing unit 200 is specifically configured to: emit a first test pulse for the target magnetic shielding layer to acquire first voltage data and first current data; determine the target polarity of the target magnetic shielding layer based on the first voltage data and first current data; if the target polarity is the same as the pulse polarity of the first test pulse, emit a second test pulse to acquire second voltage data and second current data, wherein the voltage excitation direction of the second test pulse is the same as that of the first test pulse; if the target polarity is opposite to that of the first test pulse, emit a third test pulse to acquire third voltage data and third current data, wherein the voltage excitation direction of the third test pulse is opposite to that of the first test pulse.

[0057] In one embodiment, the state analysis unit 300 is specifically used to: compare the first voltage data and the first current data with the calibration magnetization curve to determine the first current reference point; compare the second voltage data and the second current data with the calibration magnetization curve to determine the second current reference point; determine the target current curve based on the first current reference point and the second current reference point; and determine the current remanent magnetization state of the target magnetic shielding layer according to the comparison result between the target current curve and the calibration magnetization curve.

[0058] In one embodiment, the state analysis unit 300 is specifically configured to: compare the first voltage data and the first current data with the calibration magnetization curve to determine the first current reference point and the first current curve; compare the third voltage data and the third current data with the calibration magnetization curve to determine the third current reference point and the second current curve; determine the target current curve based on the first current reference point, the first current curve, the third current reference point, and the second current curve; and determine the current remanent magnetization state of the target magnetic shielding layer based on the comparison result between the target current curve and the calibration magnetization curve.

[0059] In one embodiment, the pulse test unit 200 is further configured to: determine a first current slope based on the first current data; determine a second current slope based on the third current data; determine whether the second current slope is reversed relative to the first current slope; and if no slope reversal occurs, adjust the pulse parameters of the third test pulse.

[0060] The various units described in the above embodiments can be implemented by a computer chip or by a product with a certain function. A typical implementation device is a computer. Specifically, the computer can be, for example, a personal computer, a laptop computer, a cellular phone, a camera phone, a smartphone, a personal digital assistant, a media player, a navigation device, an email device, a game console, a tablet computer, a wearable device, or any combination of these devices.

[0061] For ease of description, the above devices are described separately by function as various units. Of course, in implementing this application, the functions of each unit can be implemented in one or more software and / or hardware.

[0062] Please see Figure 10 This disclosure also provides an electronic device, which includes a memory and a processor. The memory is used to store a computer program, and when the computer program is executed by the processor, it implements the above-described method for detecting residual magnetism.

[0063] This disclosure also provides a computer-readable storage medium for storing a computer program that, when executed by a processor, implements the above-described method for detecting residual magnetism.

[0064] The processor can be a central processing unit (CPU). It can also be other general-purpose processors, digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, or combinations thereof.

[0065] Memory, as a non-transitory computer-readable storage medium, can be used to store non-transitory software programs, non-transitory computer-executable programs, and modules, such as the program instructions / modules corresponding to the methods in the embodiments of this disclosure. The processor executes various functional applications and data processing by running the non-transitory software programs, instructions, and modules stored in the memory, thereby implementing the methods in the above-described embodiments.

[0066] The memory may include a program storage area and a data storage area. The program storage area may store the operating system and applications required for at least one function; the data storage area may store data created by the processor, etc. Furthermore, the memory may include high-speed random access memory and non-transitory memory, such as at least one disk storage device, flash memory device, or other non-transitory solid-state storage device. In some embodiments, the memory may optionally include memory remotely located relative to the processor, which can be connected to the processor via a network. Examples of such networks include, but are not limited to, the Internet, corporate intranets, local area networks, mobile communication networks, and combinations thereof.

[0067] Those skilled in the art will understand that all or part of the processes in the methods of the above embodiments can be implemented by a computer program instructing related hardware. The program can be stored in a computer-readable storage medium, and when executed, it can include the processes of the embodiments of the above methods. The storage medium can be a magnetic disk, optical disk, read-only memory (ROM), random access memory (RAM), flash memory, hard disk drive (HDD), or solid-state drive (SSD), etc.; the storage medium can also include combinations of the above types of memory.

[0068] The various embodiments in this specification are described in a progressive manner. Similar or identical parts between embodiments can be referred to mutually. Each embodiment focuses on describing the differences from other embodiments. In particular, embodiments of apparatus, devices, and storage media are basically similar to method embodiments, so the descriptions are relatively simple; relevant parts can be referred to the descriptions of the method embodiments.

[0069] The above description is merely an embodiment of this application and is not intended to limit the scope of this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of the claims of this application.

[0070] Although embodiments of the present disclosure have been described in conjunction with the accompanying drawings, those skilled in the art can make various modifications and variations without departing from the spirit and scope of the present disclosure, and such modifications and variations all fall within the scope defined by the appended claims.

Claims

1. A residual magnetic state detection method, characterized by, The method comprises: obtaining a calibration magnetization curve, the calibration magnetization curve being generated according to recorded data of a response of a target magnetic shielding layer to a calibration excitation pulse, the calibration magnetization curve comprising a correlation between a surface remanence change curve, a voltage change curve and a current change curve; for the target magnetic shielding layer, emitting a test excitation pulse, and obtaining test voltage data and test current data; wherein a test pulse width of the test excitation pulse is less than a preset proportion of a calibration pulse width of the calibration excitation pulse, and the calibration excitation pulse and the test excitation pulse are both square wave pulses; comparing the test voltage data and the test current data with the calibration magnetization curve to determine a current remanence state of the target magnetic shielding layer.

2. The method of claim 1, wherein, Before obtaining the calibration magnetization curve, the method further comprises: for the target magnetic shielding layer, applying the calibration excitation pulse; obtaining calibration voltage data of the target magnetic shielding layer for the calibration excitation pulse, and determining the voltage change curve according to the calibration voltage data; obtaining calibration current data of the target magnetic shielding layer for the calibration excitation pulse, and determining the current change curve according to the calibration current data; obtaining calibration remanence state data of the target magnetic shielding layer for the calibration excitation pulse, and determining the surface remanence change curve according to the calibration remanence state data; establishing a correlation between the surface remanence change curve, the voltage change curve and the current change curve by using time information of the calibration excitation pulse.

3. The method of claim 2, wherein, The obtaining of the calibration remanence state data of the target magnetic shielding layer for the calibration excitation pulse, and the determination of the surface remanence change curve according to the calibration remanence state data, comprises: using the calibration excitation pulse to make the target magnetic shielding layer complete a plurality of magnetic saturation cycles, the magnetic saturation cycles including positive saturation cycles and negative saturation cycles; obtaining single-point remanence state data of a plurality of surface observation points of the target magnetic shielding layer in the magnetic saturation cycles; generating single-point remanence change curves according to the single-point remanence state data; determining the surface remanence change curve according to a fitting result of a plurality of the single-point remanence change curves.

4. The method of claim 1, wherein, The emitting of the test excitation pulse for the target magnetic shielding layer, and the obtaining of the test voltage data and the test current data, comprises: for the target magnetic shielding layer, emitting a first test pulse, and obtaining first voltage data and first current data; determining a target polarity of the target magnetic shielding layer based on the first voltage data and the first current data; if the target polarity is the same as a pulse polarity of the first test pulse, emitting a second test pulse, and obtaining second voltage data and second current data, the second test pulse being the same as the first test pulse in a voltage excitation direction; if the target polarity is opposite to the pulse polarity of the first test pulse, emitting a third test pulse, and obtaining third voltage data and third current data, the third test pulse being opposite to the first test pulse in the voltage excitation direction.

5. The method of claim 4, wherein, The comparing the test voltage data and the test current data with the calibration magnetization curve to determine the current residual magnetism state of the target magnetic shielding layer comprises: comparing the first voltage data and the first current data with the calibration magnetization curve to determine a first current reference point; comparing the second voltage data and the second current data with the calibration magnetization curve to determine a second current reference point; determining a target current curve based on the first current reference point and the second current reference point; determining the current residual magnetism state of the target magnetic shielding layer according to a comparison result of the target current curve and the calibration magnetization curve.

6. The method of claim 4, wherein, The comparing the test voltage data and the test current data with the calibration magnetization curve to determine the current residual magnetism state of the target magnetic shielding layer comprises: comparing the first voltage data and the first current data with the calibration magnetization curve to determine a first current reference point and a first current curve; comparing the third voltage data and the third current data with the calibration magnetization curve to determine a third current reference point and a second current curve; determining a target current curve based on the first current reference point, the first current curve, the third current reference point, and the second current curve; determining the current residual magnetism state of the target magnetic shielding layer according to a comparison result of the target current curve and the calibration magnetization curve.

7. The method of claim 4, wherein, After the emitting a third test pulse, and acquiring third voltage data and third current data, the method further comprises: determining a first current slope according to the first current data; determining a second current slope according to the third current data; judging whether the second current slope reverses relative to the first current slope; if the slope does not reverse, adjusting a pulse parameter of the third test pulse.

8. A residual magnetic state detection device, characterized by comprising: The device comprises: an information acquisition unit configured to acquire a calibration magnetization curve, the calibration magnetization curve being generated according to response data of a target magnetic shielding layer to a calibration excitation pulse, and the calibration magnetization curve containing an associated corresponding relationship among a surface residual magnetism change curve, a voltage change curve, and a current change curve; a pulse test unit configured to emit a test excitation pulse to the target magnetic shielding layer, and acquire test voltage data and test current data, wherein a test pulse width of the test excitation pulse is less than a preset proportion of a calibration pulse width of the calibration excitation pulse, and the calibration excitation pulse and the test excitation pulse are both square wave pulses; a state analysis unit configured to compare the test voltage data and the test current data with the calibration magnetization curve, and determine a current residual magnetism state of the target magnetic shielding layer.

9. An electronic device, comprising: The electronic device comprises a memory and a processor, the memory is configured to store a computer program, and the computer program is executed by the processor to implement the method in any one of claims 1 to 7.

10. A computer-readable storage medium, characterized in that, The computer readable storage medium is configured to store a computer program, and the computer program is executed by a processor to implement the method in any one of claims 1 to 7.

Citation Information

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