Semiconductor device and preparation method thereof, and electronic equipment

Abstract

The invention provides a semiconductor device and a preparation method thereof, and electronic equipment, and relates to the technical field of semiconductor chips. The semiconductor device includes a semiconductor structure, a plurality of heat conductors, a heat conducting wall, and a heat conducting liquid. The heat conductors are arranged on at least part of the surface of the semiconductor structure, the heat conduction wall is arranged on the sides, away from the semiconductor structure, of the heat conductors, and the heat conduction liquid is located among the heat conductors. The semiconductor device is applied to a dynamic random access memory to realize data reading and writing operations.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of semiconductor chip, and particularly relates to a semiconductor device and a preparation method thereof, and an electronic device. BACKGROUND

[0002] The heat generated by electronic products in the running process comes from the switching of internal semiconductor devices and Joule's law. With the integration of 3D packaging, the power in the unit volume of the semiconductor device will be more, and the heat will also increase, thereby reducing the electrical performance and reliability of the semiconductor device, and even causing the semiconductor device to fail.

[0003] Therefore, how to improve the heat dissipation performance of the semiconductor device is a technical problem to be solved by related technical personnel. SUMMARY

[0004] Embodiments of the present disclosure provide a semiconductor device and a preparation method thereof, and an electronic device.

[0005] Embodiments of the present disclosure adopt the following technical solutions:

[0006] In one aspect, a semiconductor device is provided. The semiconductor device includes a semiconductor structure, a plurality of heat-conducting bodies, a heat-conducting wall, and a heat-conducting liquid. The plurality of heat-conducting bodies are arranged on at least part of the surface of the semiconductor structure, the heat-conducting wall is arranged on the side of the plurality of heat-conducting bodies away from the semiconductor structure, and the heat-conducting liquid is located between the plurality of heat-conducting bodies.

[0007] In some embodiments, the heat-conducting body is a heat-conducting particle, wherein the particle size of the heat-conducting particle is greater than or equal to 10 nm and less than or equal to 5 μm.

[0008] In some embodiments, the heat-conducting liquid includes an electronic fluorinated liquid or a silicone oil.

[0009] In some embodiments, the semiconductor structure includes a body and a metal layer arranged on the surface of the body, and the heat-conducting body is arranged between the metal layer and the heat-conducting wall.

[0010] In some embodiments, the heat-conducting body and the metal layer are an integral structure.

[0011] In some embodiments, the heat-conducting wall and the surface of the semiconductor structure have a closed cavity structure. The semiconductor structure is provided with a heat dissipation channel, the heat dissipation channel penetrates through the semiconductor structure, and both ends of the heat dissipation channel are in communication with the cavity structure.

[0012] In some embodiments, the semiconductor device further comprises a heat sink and a circulating device. The thermally conductive wall is provided with a first opening and a second opening, both of which are in communication with the enclosed cavity structure. The heat sink has a first interface and a second interface, the first interface being in communication with the first opening, and the second interface being in communication with the second opening through the circulating device. The circulating device is configured to drive the thermally conductive liquid to circulate between the cavity structure and the heat sink.

[0013] In some embodiments, the semiconductor structure comprises a substrate and a plurality of semiconductor units spaced apart on the substrate. The thermally conductive wall encloses the substrate and the plurality of semiconductor units.

[0014] In another aspect, a method for manufacturing a semiconductor device is provided. The method comprises forming a semiconductor structure. A plurality of thermally conductive bodies are formed on at least a portion of a surface of the semiconductor structure. A thermally conductive wall is formed on a side of the plurality of thermally conductive bodies away from the semiconductor structure. A thermally conductive liquid is formed between the plurality of thermally conductive bodies.

[0015] In some embodiments, the plurality of thermally conductive bodies are formed by forming a metal layer on at least a portion of a surface of the semiconductor structure. A portion of the metal layer is removed to form the plurality of thermally conductive bodies on a side of the metal layer away from the semiconductor structure.

[0016] In some embodiments, the thermally conductive wall is formed by forming a thermally conductive film on a side of the plurality of thermally conductive bodies away from the semiconductor structure, the thermally conductive film and the surface of the semiconductor structure forming an enclosed cavity structure. The thermally conductive film is solidified to form the thermally conductive wall.

[0017] In some embodiments, before the thermally conductive wall is formed, the method further comprises forming a heat dissipation channel on the surface of the semiconductor structure where the thermally conductive bodies are located.

[0018] In yet another aspect, an electronic device is provided, which comprises a mainboard and a semiconductor device as described above disposed on the mainboard.

[0019] In some embodiments, the electronic device further comprises a heat sink and a circulating device. The thermally conductive wall is provided with a first opening and a second opening, both of which are in communication with the enclosed cavity structure between the thermally conductive wall and the surface of the semiconductor structure. The heat sink has a first interface and a second interface, the first interface being in communication with the first opening, and the second interface being in communication with the second opening through the circulating device. The circulating device is configured to drive the thermally conductive liquid to circulate between the cavity structure and the heat sink. BRIEF DESCRIPTION OF DRAWINGS

[0020] In order to more clearly illustrate the technical solutions in the present disclosure, the drawings needed to be used in some embodiments of the present disclosure will be briefly introduced as follows. Obviously, the drawings in the following description only represent some embodiments of the present disclosure, and other drawings can also be obtained by those skilled in the art according to these drawings. In addition, the drawings in the following description can be regarded as schematic diagrams, and are not limited to the actual size, actual process, actual timing of signals, etc. of the products involved in the embodiments of the present disclosure.

[0021] Figure 1 A structural block diagram of a semiconductor device provided by some embodiments of the present disclosure is shown in FIG. 1.

[0022] Figure 2 A structural block diagram of a memory provided by some embodiments of the present disclosure is shown in FIG. 2.

[0023] Figure 3 A structural schematic diagram of a semiconductor device provided by some embodiments of the present disclosure is shown in FIG. 3.

[0024] Figure 4 A structural schematic diagram of another semiconductor device provided by some embodiments of the present disclosure is shown in FIG. 4.

[0025] Figure 5 A structural schematic diagram of another semiconductor device provided by some embodiments of the present disclosure is shown in FIG. 5.

[0026] Figure 6 A structural schematic diagram of another semiconductor device provided by some embodiments of the present disclosure is shown in FIG. 6.

[0027] Figure 7 A structural schematic diagram of another semiconductor device provided by some embodiments of the present disclosure is shown in FIG. 7.

[0028] Figure 8 A flowchart of a preparation method of a semiconductor device provided by some embodiments of the present disclosure is shown in FIG. 8.

[0029] Figure 9 A structural schematic diagram of a semiconductor device corresponding to the preparation method in FIG. 8 is shown in FIG. 9. Figure 8

[0030] A structural schematic diagram of another semiconductor device corresponding to the preparation method in FIG. 10 is shown in FIG. 11. Figure 10 Figure 8 A structural schematic diagram of another semiconductor device corresponding to the preparation method in FIG. 12 is shown in FIG. 13.

[0031] Figure 11 Figure 8 A structural schematic diagram of another semiconductor device corresponding to the preparation method in FIG. 14 is shown in FIG. 15.

[0032] Figure 12 A flowchart of a preparation method of a heat conductor provided by some embodiments of the present disclosure is shown in FIG. 16. ​​

[0033] Figure 13 A structure diagram of a semiconductor device corresponding to the preparation method in Figure 12

[0034] Figure 14 A structure diagram of another semiconductor device corresponding to the preparation method in Figure 12

[0035] Figure 15 A flow chart of a preparation method of a heat-conducting wall provided by some embodiments of the present disclosure. DETAILED DESCRIPTION

[0036] The technical solutions in the embodiments of the present disclosure will be clearly and completely described below with reference to the drawings. Obviously, the described embodiments are only some of the embodiments of the present disclosure, but not all the embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by those skilled in the art belong to the scope of protection of the present disclosure.

[0037] Unless otherwise required by context, the term “comprises” in the specification and claims is to be construed as an open, inclusive meaning, i.e., “comprises, but not limited to”. In the description of the specification, the terms “one embodiment”, “some embodiments”, “exemplary” or “some examples” are intended to mean that the particular feature, structure, material or characteristic being described in connection with the embodiment or example includes at least one embodiment or example of the present disclosure. The illustrative representations of the above terms do not necessarily refer to the same embodiment or example. In addition, the particular features, structures, materials or characteristics described can be included in any suitable manner in any one or more embodiments or examples.

[0038] Hereinafter, the terms “first” and “second” are used only for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined with “first” and “second” can explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise stated, the meaning of “a plurality of” is two or more.

[0039] In describing some embodiments, “coupled” and “connected” and their derivatives can be used. For example, the term “connected” can be used in describing some embodiments to indicate that two or more components have direct physical or electrical contact with each other. For another example, the term “coupled” can be used in describing some embodiments to indicate that two or more components have direct physical or electrical contact with each other. However, the term “coupled” can also mean that two or more components have no direct contact with each other, but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited by the content herein. ​​

[0040] Exemplary embodiments are described herein with reference to cross-sectional and / or plan view illustrations that are schematic illustrations of idealized embodiments. In the drawings, the thickness of layers and regions are exaggerated for clarity. Accordingly, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and / or tolerances, are to be expected. Thus, the exemplary embodiments should not be construed as limited to the particular shapes of regions as illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an etched region illustrated as a rectangle will typically have rounded or curved features. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region of a device and are not intended to limit the scope of the exemplary embodiments.

[0041] In some embodiments, the electronic device includes a mainboard and semiconductor devices disposed on the mainboard.

[0042] In some examples, the electronic device can be a mobile phone, a desktop computer, a laptop computer, a tablet computer, a vehicle computer, a game console, a printer, a positioning device, a wearable electronic device (e.g., a smart watch, a smart bracelet, smart glasses, etc.), a virtual reality (VR) device, an argument reality (AR) device, or any other suitable electronic device having a storage therein. Among them, the semiconductor devices can be processors of the electronic device, such as a central processing unit (CPU), a graphic process unit (GPU), or a system-on-chip (SoC), a high bandwidth memory (HBM), etc.

[0043] Exemplarily, the number of semiconductor devices can be one or more. As a possible implementation, when the number of semiconductor devices is multiple, the multiple semiconductor devices can be disposed on the mainboard with intervals.

[0044] Figure 1 A structural block diagram of the semiconductor device 100 is provided for some embodiments of the present disclosure.

[0045] As Figure 1As shown, in some embodiments, the semiconductor structure 120 within the semiconductor device 100 can have one or more memories 911 and a controller 912. For example, the controller 912 can be configured to operate in a low duty cycle environment, such as an SD card, a CF card, a universal serial bus (USB) flash drive, or other media used in electronic devices such as personal computers, digital cameras, mobile phones, etc. Alternatively, in other examples, the controller 912 is configured to operate in a high duty cycle environment, such as an SSD or eMMC used for data storage in mobile devices such as smartphones, tablets, laptops, etc. and enterprise storage arrays. Yet alternatively, in some examples, the controller 912 is coupled to the memory 911 and configured to control data in the memory 911 while being able to communicate with external devices.

[0046] The number of memories 911 in the semiconductor structure can be one or more, Figure 1The semiconductor structure 120 includes three memories 911 as an example. A controller 912 can manage data stored in each memory 911 and communicate with external devices. The controller 912 can be configured to control operations of each memory 911, such as read, write, and refresh operations. The controller 912 can also be configured to manage various functions related to data stored or to be stored in each memory 911, including but not limited to refresh and timing control, command / request translation, buffering and scheduling, and power management. In some embodiments, the controller 912 is also configured to determine the maximum memory capacity, the number of memory banks, the memory type and speed, the memory grain data depth and data width, and other important parameters that the computer system can use. Any other suitable functions can also be performed by the controller 912. The controller 912 can communicate with external devices according to a specific communication protocol. For example, the controller 912 can communicate with external devices through at least one of various interface protocols, such as a USB protocol, an MMC protocol, a peripheral component interconnection (PCI) protocol, a PCI express (PCI-E) protocol, an advanced technology attachment (ATA) protocol, a serial ATA protocol, a parallel ATA protocol, a small computer small interface (SCSI) protocol, an enhanced small disk interface (ESDI) protocol, an integrated drive electronics (IDE) protocol, a firewire protocol, and the like.

[0047] Figure 2 A structural block diagram of the memory 911 is provided for some embodiments of the present disclosure.

[0048] As Figure 2As shown, the memory 911 includes a memory cell array 913 and a peripheral circuit 914 for controlling the memory cell array 913, which can include any suitable digital, analog, and / or mixed-signal circuitry for facilitating the operation of the memory cell array 913. For example, the peripheral circuit 914 can include one or more of a page buffer, decoders (e.g., row decoders and column decoders), sense amplifiers, drivers (e.g., word line drivers), input / output (I / O) circuitry, charge pumps, voltage sources or generators, current or voltage references, any portion of the functional circuitry described above (e.g., sub-circuits), or any active or passive components of the circuitry (e.g., transistors, diodes, resistors, or capacitors).

[0049] For example, the peripheral circuit 914 can be implemented using complementary metal-oxide-semiconductor (CMOS) technology, which can utilize logic processes (e.g., technology nodes of 90 nm, 65 nm, 60 nm, 45 nm, 32 nm, 28 nm, 22 nm, 20 nm, 16 nm, 14 nm, 10 nm, 7 nm, 5 nm, 3 nm, 2 nm, etc.).

[0050] The memory cell array 913 and the peripheral circuit 914 can be arranged side-by-side in the same plane, e.g., on the same wafer, i.e., the memory cell array 913 and the peripheral circuit 914 can be located in the same semiconductor structure. The memory cell array 913 and the peripheral circuit 914 can also be formed on different wafers and bonded together in a face-to-face manner. Figure 2 As shown, when the memory cell array 913 and the peripheral circuit 914 are formed on different wafers and bonded together in a face-to-face manner, the memory 911 can include a first semiconductor structure 901 and a second semiconductor structure 902, and a bonding interface 903 between the first semiconductor structure 901 and the second semiconductor structure 902.

[0051] The first semiconductor structure 901 can include an array of memory cells 913, and the second semiconductor structure 902 can include a peripheral circuit 914. A large number of interconnects (e.g., bonding contacts) are formed through the bonding interface 903, and direct short-distance (e.g., micron-level) electrical connections can be made between the first semiconductor structure 901 and the second semiconductor structure 902 instead of long-distance (e.g., millimeter- or centimeter-level) chip-to-chip data buses on a circuit board (e.g., a printed circuit board (PCB)), thereby eliminating chip interface delays and enabling high-speed I / O throughput with reduced power consumption. Data transfer between the array of memory cells in the first semiconductor structure 901 and the peripheral circuit in the second semiconductor structure 902 can be performed through the interconnects (e.g., bonding contacts) through the bonding interface 903. By vertically integrating the first semiconductor structure 901 and the second semiconductor structure 902, chip size can be reduced, and storage density of the memory 911 can be increased.

[0052] The array of memory cells 913 can be an array of memory cells that use vertical transistors as switching and selection devices. In some embodiments, the array of memory cells 913 can be an array of dynamic random-access memory cells. For ease of description, an array of DRAM cells can be used to describe examples of the array of memory cells 913 in the present disclosure. However, it should be understood that the array of memory cells 913 is not limited to an array of DRAM cells, and can include any other suitable type of array of memory cells 913 that can use vertical transistors as switching and selection devices, such as an array of PCM cells, an array of static random-access memory (SRAM) cells, an array of FRAM cells, an array of resistive memory cells, an array of magnetic memory cells, an array of spin transfer torque (STT) memory cells, etc.

[0053] In the scenario where the array of memory cells 913 is an array of DRAM cells, the memory cells therein are DRAM cells, which include a capacitor for storing a data bit as a positive or negative charge and one or more transistors (also referred to as pass transistors) that control (e.g., switch and select) access to the DRAM cell. In some embodiments, each DRAM cell is a one-transistor and one-capacitor (1T1C) cell. According to some embodiments, the DRAM cells can be refreshed by the peripheral circuit 914 to maintain data.

[0054] In some embodiments, the electronic device further comprises a heat sink and a circulating device. The heat-conductive wall of the semiconductor device is provided with a first opening and a second opening, both of which are in communication with the closed cavity structure between the heat-conductive wall and the surface of the semiconductor structure. The heat sink has a first interface and a second interface, the first interface is in communication with the first opening, and the second interface is in communication with the second opening through the circulating device. The circulating device is used to drive the circulation of the heat-conductive liquid between the cavity structure and the heat sink.

[0055] In this embodiment, the circulating device can realize the circulation of the heat-conductive liquid between the semiconductor device and the heat sink, thereby realizing the recycling of the heat-conductive liquid, further realizing energy saving and emission reduction, reducing the impact on the environment, and meeting the current environmental protection requirements.

[0056] In addition, the heat-conductive liquid flowing out of the first opening of the semiconductor device can realize the dissipation of the heat carried by it after flowing through the heat sink, thereby realizing the cooling treatment of the heat-conductive liquid, and further realizing the heat dissipation treatment of the semiconductor device under the driving of the circulating device.

[0057] In this way, the above process is cycled, which can realize the continuous cooling of the semiconductor device, thereby improving the electrical performance and reliability of the semiconductor device in a continuous time period.

[0058] In this way, the above process is cycled, which can realize the continuous cooling of the semiconductor device, thereby improving the electrical performance and reliability of the semiconductor device in a continuous time period.

[0059] Figure 3 A structural schematic diagram of a semiconductor device 100 provided by some embodiments of the present disclosure is shown.

[0060] As shown in Figure 3 In some embodiments, the semiconductor device 100 comprises a semiconductor structure 120, a plurality of heat-conductive bodies 130, a heat-conductive wall 140, and a heat-conductive liquid 150. The plurality of heat-conductive bodies 130 is arranged on at least part of the surface of the semiconductor structure 120, the heat-conductive wall 140 is arranged on the side of the plurality of heat-conductive bodies 130 away from the semiconductor structure 120, and the heat-conductive liquid 150 is located between the plurality of heat-conductive bodies 130.

[0061] In this embodiment, by arranging the plurality of heat-conductive bodies 130 on at least part of the surface of the semiconductor structure 120, the heat generated by the semiconductor structure 120 can be conducted to the heat-conductive bodies 130, thereby realizing the dissipation of heat by the heat-conductive bodies 130. Among them, since a plurality of heat-conductive bodies 130 are arranged, the surface area of heat dissipation can be increased by using a plurality of heat-conductive bodies 130, thereby improving the heat dissipation efficiency and further improving the heat dissipation capacity of the semiconductor device 100.

[0062] In addition, the heat-conducting liquid 150 is filled between the plurality of heat-conducting bodies 130, so as to form a solid-liquid interface of solid-liquid mixing. In this way, the heat-exchange capacity of the semiconductor device 100 can be improved by using the heat convection of the heat-conducting liquid 150 and the heat-dissipation surface of the plurality of heat-conducting bodies 130, so as to improve the heat-dissipation efficiency of the semiconductor device 100, and further improve the reliability of the semiconductor device 100.

[0063] In addition, in the embodiment, the plurality of heat-conducting bodies 130 are further provided with the heat-conducting wall 140 away from the semiconductor structure 120. In this way, the space between the heat-conducting wall 140 and the side wall of the semiconductor structure 120 can be used to provide space for the filling and flowing of the heat-conducting liquid 150, and avoid the leakage of the heat-conducting liquid 150 from affecting the heat-dissipation performance. In addition, the heat-conducting wall 140 can also transfer the heat carried by the heat-conducting liquid 150, so as to dissipate the heat carried by the heat-conducting liquid 150 outward, so as to realize the heat-dissipation treatment of the semiconductor structure 120, so as to avoid the reduction of the electrical performance of the semiconductor device 100 caused by the untimely heat dissipation, and even cause the damage of the semiconductor device 100.

[0064] Please continue to refer to Figure 3 In some embodiments, the heat-conducting body 130 is a heat-conducting particle, wherein the particle size H of the heat-conducting particle is greater than or equal to 10 nm and less than or equal to 5 μm.

[0065] In the embodiment, by setting the particle size H of the heat-conducting particle to be greater than or equal to 10 nm, the size of the heat-conducting body 130 can be avoided to be too small, for example, the particle size H of the heat-conducting particle is less than 10 nm. For example, if the particle size H of the heat-conducting particle is too small, for example, the particle size H of the heat-conducting particle is 2 nm, the gap between the heat-conducting wall 140 on both sides of the heat-conducting body 130 and the side wall of the semiconductor structure 120 will be too small, so that it is difficult to fill the heat-conducting liquid 150 in the subsequent preparation process, and the difficulty of the preparation process is increased.

[0066] Therefore, by setting the particle size H of the heat-conducting body 130 to be greater than or equal to 10 nm, the heat-conducting body 130 can be used to support between the heat-conducting wall 140 and the side wall of the semiconductor structure 120, so that the gap between the heat-conducting wall 140 and the side wall of the semiconductor structure 120 is sufficient to fill the heat-conducting liquid 150, so as to reduce the difficulty of the preparation process of the heat-conducting liquid 150, and improve the heat-dissipation efficiency of the semiconductor structure 120. In the embodiment, by timely exporting the heat generated by the semiconductor structure 120, the electrical performance and the reliability of the semiconductor structure 120 can be improved.

[0067] In addition, in the embodiment, the particle size H of the heat-conducting particles is set to be less than or equal to 5 μm, so that the heat-conducting particles 130 are not too large, for example, H > 5 μm. For example, if the particle size H of the heat-conducting particles is too large, for example, the particle size H of the heat-conducting particles is 10 μm, the distance between the heat-conducting wall 140 and the side wall of the semiconductor structure 120 will be increased too much, so that the heat transfer from the semiconductor structure 120 to the heat-conducting wall 140 is reduced, and the heat-conducting performance of the heat-conducting particles 130, the heat-conducting liquid 150 and the heat-conducting wall 140 is reduced. In addition, the heat-conducting particles 130 with a large particle size will increase the size of the semiconductor device 100, which is not conducive to the further miniaturization of the semiconductor device 100 and the assembly of the semiconductor device 100 with other devices.

[0068] Therefore, by setting the particle size H of the heat-conducting particles to be less than or equal to 5 μm, the semiconductor device 100 can be further miniaturized on the basis of improving the heat dissipation performance of the semiconductor device 100, so that the production cost is reduced, and the reliability and stability of the semiconductor device 100 are improved.

[0069] In some examples, the plurality of heat-conducting particles can be distributed on the surface of the semiconductor structure 120 at intervals. Alternatively, in other examples, the plurality of heat-conducting particles can be distributed on the surface of the semiconductor structure 120 in sequence and adjacent to each other.

[0070] In addition, for example, the shape of the heat-conducting particles can be spherical, ellipsoidal, irregular, or any other shape that meets the above particle size range. The shapes of the plurality of heat-conducting particles can be the same or different, which is not limited in the present disclosure. For example, the material of the heat-conducting particles can be metal, ceramic, or any other material with good heat-conducting performance, which is also not limited in the present disclosure.

[0071] In some embodiments, the heat-conducting liquid 150 includes electronic fluorinated liquid or silicon oil.

[0072] In the embodiment, for example, the material of the heat-conducting liquid 150 can include electronic fluorinated liquid, which is a high-thermal-conductivity compound and can achieve rapid heat transfer. When the semiconductor structure 120 generates a large amount of heat during operation, the heat can be absorbed by the electronic fluorinated liquid and quickly conducted to the surrounding heat-conducting wall 140 by contacting the semiconductor structure 120 with the electronic fluorinated liquid, and then the heat is dissipated outward through the heat-conducting wall 140, so that the semiconductor structure 120 is cooled in time, the heat dissipation efficiency of the semiconductor structure 120 is improved, and the electrical performance and reliability of the semiconductor structure 120 are improved.

[0073] Furthermore, the electronic fluorinated liquid exhibits density differences upon heating, thereby creating convection flow and enhancing heat conduction, which in turn improves heat dissipation from the semiconductor structure 120. This design allows for timely heat dissipation from the semiconductor structure 120, thus improving the heat dissipation performance of the semiconductor device 100.

[0074] In this embodiment, "electronic fluorinated liquid" refers to a liquid containing a fluorinated solvent, such as any suitable thermally conductive liquid like hydrofluoroether, and this disclosure does not impose any limitations on it.

[0075] In other examples, the material of the thermally conductive liquid 150 may also include silicone oil. In this embodiment, silicone oil can refer to a linear polysiloxane product that remains liquid at room temperature, such as methyl silicone oil, ethyl silicone oil, phenyl silicone oil, or any other suitable thermally conductive liquid of this disclosure; this disclosure does not limit such applications.

[0076] Figure 4 This is a schematic diagram of the structure of another semiconductor device 100 provided in some embodiments of this disclosure.

[0077] like Figure 4 As shown, in some embodiments, the semiconductor structure 120 includes a body 121 and a metal layer 122 disposed on the surface of the body 121, and a heat conductor 130 is disposed between the metal layer 122 and the heat-conducting wall 140.

[0078] In this embodiment, by providing a metal layer 122 between the heat-conducting wall 140 and the heat conductor 130, the good thermal conductivity of the metal layer 122 can be utilized to quickly conduct the heat generated by the semiconductor structure 120 to the heat conductor 130, and then transfer and dissipate the heat to the outside through the heat-conducting liquid 150 and the heat-conducting wall 140, thereby increasing the rate of heat conduction and realizing timely cooling of the semiconductor structure 120, thereby improving the heat dissipation capacity of the semiconductor structure 120.

[0079] For example, the material of the metal layer 122 may include any suitable metal such as copper or silver, and this disclosure does not limit it.

[0080] Please continue reading. Figure 4 In some embodiments, the heat conductor 130 and the metal layer 122 are an integral structure.

[0081] In this embodiment, the heat conductor 130 can be made of metal, such as copper, silver or any other suitable metal, and this disclosure does not impose any restrictions on it.

[0082] In some examples, the metal material used for the heat conductor 130 can be the same as or different from the metal material used for the metal layer 122. When the heat conductor 130 and the metal layer 122 use the same metal material, the heat conductor 130 and the metal layer 122 can be a single integrated structure, that is, there is no clear boundary between the heat conductor 130 and the metal layer 122. This configuration allows the heat conductor 130 to be fabricated on the same basis as the metal layer 122, thereby simplifying the fabrication process and reducing production costs.

[0083] Furthermore, by fabricating a heat conductor 130 integrally connected to the metal layer 122, the heat conductor 130 can be fixed, thus preventing displacement of the heat conductor 130 due to the flow of the heat-conducting liquid 150. This would prevent the heat conductors 130 from becoming too close together, hindering the flow of the heat-conducting liquid 150 and affecting its heat exchange capacity. Therefore, by fabricating a heat conductor 130 integrally with the metal layer 122, the smooth flow of the heat-conducting liquid 150 can be ensured, thereby achieving timely heat dissipation from the semiconductor structure 120 and improving the electrical performance and stability of the semiconductor device 100.

[0084] Figure 5 This is a schematic diagram of the structure of another semiconductor device 100 provided in some embodiments of the present disclosure.

[0085] like Figure 5 As shown, in some embodiments, a closed cavity structure 160 is provided between the heat-conducting wall 140 and the surface of the semiconductor structure 120. A heat dissipation channel 123 is provided on the semiconductor structure 120, the heat dissipation channel 123 penetrates the semiconductor structure 120, and both ends of the heat dissipation channel 123 are connected to the cavity structure 160.

[0086] In this embodiment, the gap between the thermally conductive wall 140 and the surface of the semiconductor structure 120 can be a closed cavity structure 160. This configuration allows the cavity structure 160 to provide space for the filling of the thermally conductive liquid 150, and the sealing property of the cavity structure 160 ensures the thermally conductive liquid 150 is sealed, preventing leakage of the thermally conductive liquid 150 from affecting other device structures outside the semiconductor device 100, thereby impacting the heat dissipation performance of the semiconductor device 100. This configuration also reduces the fabrication difficulty of the thermally conductive liquid 150, thereby reducing the fabrication cost of the semiconductor device 100.

[0087] Furthermore, in this embodiment, by providing multiple spaced heat dissipation channels 123 within the semiconductor structure 120, the thermally conductive liquid 150 within the cavity structure 160 can flow into the interior of the semiconductor structure 120, thereby increasing the surface area of ​​contact between the thermally conductive liquid 150 and the semiconductor structure 120, and thus improving the heat exchange capacity of the thermally conductive liquid 150. In other words, it increases the rate at which the heat generated by the thermally conductive liquid 150 on the semiconductor structure 120 is conducted outward, thereby accelerating the cooling process of the semiconductor structure 120 and improving the electrical performance and stability of the semiconductor device 100.

[0088] In some examples, the number of heat dissipation channels 123 can be one or more, and the multiple heat dissipation channels 123 can be spaced apart or connected. As a feasible implementation, the heat dissipation channel 123 can extend linearly along a certain direction and penetrate the semiconductor structure 120, such that the two ends of the heat dissipation channel 123 are located on two different surfaces of the semiconductor structure 120. Alternatively, in other examples, the heat dissipation channel 123 can extend in a curved shape, such that the two ends of the heat dissipation channel 123 are located on the same surface of the semiconductor structure 120. In other examples, the heat dissipation channel 123 can also extend in any other feasible manner, which is not limited by this disclosure.

[0089] Figure 6 This is a schematic diagram of the structure of another semiconductor device 100 provided in some embodiments of the present disclosure.

[0090] like Figure 6 As shown, in some embodiments, the semiconductor device 100 further includes a heat sink 170 and a circulation device 180. A first opening 141 and a second opening 142 are provided on the heat-conducting wall 140, both communicating with the cavity structure 160. The heat sink 170 has a first interface 171 and a second interface 172; the first interface 171 communicates with the first opening 141, and the second interface 172 communicates with the second opening 142 via the circulation device 180. The circulation device 180 drives the heat-conducting liquid 150 to circulate between the cavity structure 160 and the heat sink 170.

[0091] In the embodiment, the circulation of the heat-conducting liquid 150 between the cavity structure 160 and the heat sink 170 is achieved by setting a circulating device 180. For example, the heat sink 170 is connected to the first opening 141 through the first interface 171, so as to guide the heat-conducting liquid 150 into the cavity structure 160 and flow among the plurality of heat-conducting bodies 130 in the cavity structure 160, thereby transferring the heat carried by the heat-conducting bodies 130 and the semiconductor structure 120 to the heat-conducting liquid 150, and achieving the cooling process of the semiconductor structure 120. The heat-conducting liquid 150 carrying the heat can flow out of the second opening 142 to the circulating device 180, and then be returned to the heat sink 170 through the second interface 172 by the circulating device 180, so as to achieve the cooling process of the heat-conducting liquid 150 by the heat sink 170.

[0092] The heat-conducting liquid 150 after the cooling process will repeat the above process, and be circulated into the cavity structure 160, so as to continuously cool the semiconductor structure 120, thereby ensuring that the semiconductor structure 120 and the entire semiconductor device 100 have high electrical performance and stability in a continuous time period. In this way, the circulation of the heat-conducting liquid 150 can be achieved by the circulating device, thereby saving energy, reducing environmental impact, and meeting the current environmental protection requirements. For example, the circulating device can be a circulating pump or any other device capable of driving the circulation of the heat-conducting liquid.

[0093] Please continue to refer to Figure 6 In the embodiment, the heat sink 170 can include a plurality of accommodating cavities 173, and the plurality of accommodating cavities 173 are in communication with each other, so as to prolong the path of the heat-conducting liquid 150 flowing in the heat sink 170, thereby prolonging the time of the heat-conducting liquid 150 staying in the heat sink 170, and ensuring that the heat sink 170 can dissipate the heat carried by the heat-conducting liquid 150. For example, the plurality of accommodating cavities 173 can be arranged in a stacked manner, thereby reducing the area occupied by the heat sink 170, and facilitating the miniaturization design of the semiconductor device 100.

[0094] In addition, the accommodating cavities 173 can be provided with a plurality of heat-conducting portions 1731, so as to increase the surface area of the heat sink 170 in contact with the heat-conducting liquid 150 by the heat-conducting portions 1731, thereby increasing the heat exchange capacity of the heat sink 170 and the heat-conducting liquid 150, and accelerating the dissipation of the heat transferred by the heat-conducting liquid 150. In this way, the cooling of the heat-conducting liquid 150 can be accelerated, so as to cool the semiconductor structure 120 in time by using the cooled heat-conducting liquid 150, thereby improving the heat dissipation capacity of the entire semiconductor device 100, and ensuring that the semiconductor device 100 has high electrical performance and reliability.

[0095] Figure 7A structure diagram of a semiconductor device 100 provided by some embodiments of the present disclosure is shown in FIG. 1.

[0096] As shown in FIG. 1, in some embodiments, the semiconductor structure 120 includes a substrate 125 and a plurality of semiconductor units 124 arranged on the substrate 125. Figure 7 The heat-conducting wall 140 surrounds the substrate 125 and the plurality of semiconductor units 124.

[0097] In some examples, the semiconductor units 124 can be any electronic device such as a memory 911 or a controller 912. For example, the number of memories 911 can be one or more, and the plurality of memories 911 can be arranged on the substrate 125.

[0098] For example, Figure 7 In the example shown in FIG. 1, the number of memories 911 is four. The substrate 125 with interconnection function can couple the controller 912 to the memories 911, and the controller 912 can be configured to control data in the memories 911 and communicate with external devices.

[0099] In the present embodiment, the heat-conducting wall 140 surrounds the substrate 125 and the plurality of semiconductor units 124 on the substrate 125, which can achieve heat dissipation of the entire semiconductor structure 120. In this way, heat dissipation of the overall structure can be achieved, thereby simplifying the process of splitting the plurality of semiconductor units 124 on the substrate 125, and further simplifying the preparation process and reducing the preparation cost.

[0100] Based on the semiconductor device 100 provided by some embodiments above, the present embodiment further provides a preparation method of the semiconductor device 100.

[0101] Figure 8 A flowchart of a preparation method of a semiconductor device 100 provided by some embodiments of the present disclosure is shown in FIG. 2. Figure 9 A structure diagram of a semiconductor device 100 corresponding to the preparation method in FIG. 2 is shown in FIG. 3. Figure 8 A structure diagram of a semiconductor device 100 corresponding to the preparation method in FIG. 2 is shown in FIG. 3. Figure 10 A structure diagram of a semiconductor device 100 corresponding to the preparation method in FIG. 2 is shown in FIG. 3. Figure 8 A structure diagram of a semiconductor device 100 corresponding to the preparation method in FIG. 2 is shown in FIG. 3. Figure 11 A structure diagram of a semiconductor device 100 corresponding to the preparation method in FIG. 2 is shown in FIG. 3. Figure 8 A structure diagram of a semiconductor device 100 corresponding to the preparation method in FIG. 2 is shown in FIG. 3.

[0102] As shown in FIG. 2, in some embodiments, the preparation method of the semiconductor device 100 includes the following steps S1-S4. Figure 8

[0103] ​S1, forming a semiconductor structure 120.

[0104] Please continue to refer to Figure 7 In this step S1, a plurality of semiconductor units 124 can be prepared in advance and mounted on the substrate 125 at intervals. For example, the semiconductor unit 124 can be any electronic device such as a memory 911 or a controller 912, and the present disclosure is not limited in this regard.

[0105] S2, forming a plurality of heat conductive bodies 130 on at least part of the surface of the semiconductor structure 120.

[0106] In some examples, as Figure 9 shown, a spraying process can be used to spray heat conductive particles with high thermal conductivity on at least part of the surface of the semiconductor structure 120 to form a plurality of heat conductive bodies 130. In this way, the uniformity of the distribution of the plurality of heat conductive bodies 130 on the surface of the semiconductor structure 120 can be improved, and the excessive aggregation of some heat conductive bodies 130 can be avoided, which affects the heat dissipation performance of the semiconductor structure 120. The heat conductive body 130 can be made of any material with high thermal conductivity such as metal or ceramic, and the present disclosure is not limited in this regard.

[0107] In addition, the plurality of heat conductive bodies 130 distributed on the surface of the semiconductor structure 120 can provide support for the subsequent preparation of the heat conductive wall 140, so that there is a space for accommodating the heat conductive liquid 150 between the heat conductive wall 140 and the semiconductor structure 120. Therefore, the use of the spraying process to form a plurality of heat conductive bodies 130 uniformly distributed on the surface of the semiconductor structure 120 can improve the flatness of the subsequently formed heat conductive wall 140, and further improve the flatness and regularity of the entire semiconductor device 100 in structure, which is beneficial to the assembly of the semiconductor device 100 with other external devices.

[0108] In other examples, the plurality of heat conductive bodies 130 can also be formed on at least part of the surface of the semiconductor structure 120 by an etching process. The preparation method of forming a plurality of heat conductive bodies 130 by an etching process will be described in detail later, and will not be described here.

[0109] S3, forming a heat conductive wall 140 on the side of the plurality of heat conductive bodies 130 away from the semiconductor structure 120.

[0110] As Figure 10As shown, in step S3, a heat-conducting wall 140 is formed on the side of the plurality of heat conductors 130 away from the semiconductor structure 120. This forms a closed cavity structure 160 between the heat-conducting wall 140 and the semiconductor structure 120, providing space for the subsequently filled heat-conducting liquid 150. Furthermore, the cavity structure 160 also prevents leakage of the heat-conducting liquid 150, thereby avoiding impact on other devices outside the semiconductor device 100.

[0111] In some examples, the heat-conducting wall 140 can be made of metal. In this case, a metal sidewall can be formed on the side of the plurality of heat conductors 130 away from the semiconductor structure 120 to form the heat-conducting wall 140. The plurality of heat conductors 130 can be formed between the metal sidewall and the semiconductor structure 120 by an etching process.

[0112] For example, such as Figure 11 As shown, a photoresist layer is formed on one side of the metal sidewall, and the photoresist layer is patterned to obtain a first mask layer with multiple first openings. Based on the first mask layer, one side surface of the metal sidewall is etched to form multiple first pits. For example, a dry etching method can be used to etch one side surface of the metal sidewall to obtain multiple first pits. The protrusion between any two adjacent first pits serves as a heat conductor 130. The metal sidewall with the heat conductor 130 covers at least a portion of the surface of the semiconductor structure 120, wherein the side of the metal sidewall with the heat conductor 130 is disposed close to the semiconductor structure 120.

[0113] In other examples, the heat-conducting wall 140 can also be made of any material with good thermal conductivity, such as organic materials or polymers. For example, when the heat-conducting wall 140 is made of organic materials or polymers, the corresponding preparation method will be described in detail later and will not be repeated here.

[0114] S4. A heat-conducting liquid 150 is formed between multiple heat conductors 130.

[0115] In step S4, a thermally conductive liquid 150 is filled into the cavity structure 160 between the thermally conductive wall 140 and the semiconductor structure 120, thereby forming a structure as shown in the figure. Figure 3 The semiconductor device 100 shown.

[0116] In this embodiment, by disposing a plurality of heat conductors 130 on at least part of the surface of the semiconductor structure 120, the heat generated by the semiconductor structure 120 can be conducted to the heat conductors 130, so as to increase the surface area for heat dissipation by using a plurality of heat conductors 130, thereby improving the heat dissipation efficiency. In addition, the heat-conducting liquid 150 between the plurality of heat conductors 130 and the heat-conducting wall 140 on the other side of the heat conductor 130 can improve the heat exchange capacity of the semiconductor device 100, thereby improving the efficiency of the heat generated by the semiconductor device 100 to dissipate outward, and further improving the electrical performance and reliability of the semiconductor device 100.

[0117] Figure 12 A flowchart of a preparation method of a heat conductor 130 provided for some embodiments of the present disclosure, Figure 13 A structural schematic diagram of a semiconductor device 100 corresponding to the preparation method in Figure 12 Figure 14 Another structural schematic diagram of a semiconductor device 100 corresponding to the preparation method in Figure 12

[0118] As shown in Figure 12 In some embodiments, the above step S2 can further include steps S21-S22 as follows:

[0119] S21, forming a metal layer 122 on at least part of the surface of the semiconductor structure 120.

[0120] As shown in Figure 13 In this step S21, chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD) or any thin film deposition process thereof can be used to deposit a metal material on at least part of the surface of the semiconductor structure 120 to form the metal layer 122.

[0121] For example, the deposited metal material can include any one of silver, copper and other metal materials with high heat conduction performance.

[0122] S22, removing part of the metal layer 122 to form a plurality of heat conductors 130 on the side of the metal layer 122 away from the semiconductor structure 120.

[0123] As shown in Figure 14 ​​As shown, in this step S22, a photoresist layer is formed on the side of the metal layer 122 away from the semiconductor structure 120, and the photoresist layer is patterned to obtain a second mask layer having a plurality of second openings. The surface of the metal layer 122 away from the semiconductor structure 120 is etched based on the second mask layer to form a plurality of second recesses 1221. For example, the surface of the metal layer 122 away from the semiconductor structure 120 can be etched by dry etching to obtain the plurality of second recesses 1221. The protrusion between any two adjacent second recesses 1221 is the heat conductor 130.

[0124] In this way, the preparation process of the heat conductor 130 can be simplified, and the heat generated by the semiconductor structure 120 can be quickly conducted to the heat conductor 130 by using the good heat conduction performance of the metal layer 122, so as to achieve rapid cooling of the semiconductor structure 120, thereby improving the heat dissipation capability of the semiconductor structure 120, and further improving the reliability and stability of the semiconductor device 100.

[0125] In addition, the heat conductor 130 can be integrally connected with the metal layer 122 based on the metal layer 122, so as to avoid displacement of the heat conductor 130 following the flow of the heat-conducting liquid 150, so that the plurality of heat conductors 130 are in close contact, thereby hindering the flow of the heat-conducting liquid 150, and even affecting the heat convection of the heat-conducting liquid 150, and reducing the heat dissipation efficiency of the heat-conducting liquid 150 on the semiconductor structure 120.

[0126] In this way, the heat-conducting liquid 150 can timely dissipate heat from the semiconductor structure 120, thereby improving the heat dissipation capability of the entire semiconductor device 100.

[0127] Figure 15 A flowchart of a preparation method of the heat-conducting wall 140 is provided for some embodiments of the present disclosure.

[0128] As shown in some embodiments, the above step S3 further includes the following steps S31-S32: Figure 15

[0129] S31, a heat-conducting film is formed on the side of the plurality of heat conductors 130 away from the semiconductor structure 120, and the heat-conducting film and the surface of the semiconductor structure 120 form a closed cavity structure 160.

[0130] In some examples, in this step S31, the semiconductor structure 120 having the plurality of heat conductors 130 can be soaked in a heat-conducting solvent, so as to form the heat-conducting film on the side of the plurality of heat conductors 130 away from the semiconductor structure 120. For example, the heat-conducting solvent can be any solvent such as an organic substance or a polymer, which has good heat conduction performance.

[0131] ​Wherein, before the semiconductor structure 120 is soaked in the heat-conducting solvent, the liquid affinity of the heat-conducting bodies 130 and the sidewall of the semiconductor structure 120 needs to be modified in advance, so that the heat-conducting bodies 130 and the sidewall of the semiconductor structure 120 have good hydrophobicity, so that after the semiconductor structure 120 is soaked in the heat-conducting solvent, a gap exists between the heat-conducting film formed and the heat-conducting bodies 130 and the sidewall of the semiconductor structure 120, thereby forming a closed cavity structure 160.

[0132] For example, the modification technology can use ultraviolet radiation energy to achieve modification of the heat-conducting bodies 130 and the sidewall of the semiconductor structure 120.

[0133] In other examples, the heat-conducting film can also be formed on the side of the heat-conducting bodies 130 away from the semiconductor structure 120 by spraying, doctoring or any other coating method. For example, the liquid affinity of the heat-conducting bodies 130 and the sidewall of the semiconductor structure 120 also needs to be modified in advance, so that the heat-conducting bodies 130 and the sidewall of the semiconductor structure 120 have good hydrophobicity. After the heat-conducting solvent is coated on the side of the heat-conducting bodies 130 away from the semiconductor structure 120, a gap exists between the heat-conducting solvent and the heat-conducting bodies 130 and the sidewall of the semiconductor structure 120, so that the heat-conducting solvent exists in the form of a heat-conducting film. The gap between the heat-conducting film and the heat-conducting bodies 130 and the sidewall of the semiconductor structure 120 can form a closed cavity structure 160.

[0134] S32, curing the heat-conducting film 190 to form a heat-conducting wall 140.

[0135] In this step S32, a photocuring process can be used to cure the heat-conducting film 190. For example, an ultraviolet projector can be used as a light source to irradiate the heat-conducting film 190, thereby curing the heat-conducting film 190 to form a heat-conducting wall 140.

[0136] Wherein, in some examples, after the curing process of the heat-conducting film 190 is completed, ultraviolet light can continue to be used to irradiate the heat-conducting bodies 130 and the sidewall of the semiconductor structure 120, so that the heat-conducting bodies 130 and the sidewall of the semiconductor structure 120 have good liquid affinity. In the subsequent process of filling the heat-conducting liquid 150 between the heat-conducting bodies 130, the heat-conducting bodies 130 can be completely immersed in the heat-conducting liquid 150, and the heat-conducting liquid 150 can completely fill the cavity structure 160. In this way, the heat-conducting liquid 150 can better contact the heat-conducting bodies 130 and the semiconductor structure 120, so that the heat carried by the heat-conducting bodies 130 and the semiconductor structure 120 can be better conducted, thereby achieving timely heat dissipation of the semiconductor structure 120.

[0137] Exemplarily, the first opening 141 can be formed on the thermally conductive wall 140 in advance before the thermally conductive liquid 150 is filled, so as to realize the filling of the thermally conductive liquid 150 via the first opening 141. Wherein, as a feasible implementation manner, the first opening 141 can be connected with a heat sink 170 outside the semiconductor device 100, so as to realize the sealing of the cavity structure 160. In another feasible implementation manner, the first opening 141 can also be directly sealed, so as to realize the sealing of the cavity structure 160.

[0138] In this way, the leakage of the thermally conductive liquid 150 can be avoided to affect other device structures outside the semiconductor device 100, so as to improve the reliability of the semiconductor device 100 and other device structures outside the semiconductor device 100.

[0139] In some embodiments, the above steps S31-S32 are introduced in the case that the material of the thermally conductive wall 140 is any material with good thermal conductivity, such as organic matter or polymer. In addition to the above, the material of the thermally conductive wall 140 can also include metal material, which is introduced in the foregoing step S3 and will not be repeated here.

[0140] In some embodiments, before the above step S3, the preparation method further includes the following step S30:

[0141] S30, forming a heat dissipation channel 123 on the surface of the semiconductor structure 120 provided with the thermally conductive body 130.

[0142] In this embodiment, a thin film deposition process such as CVD, PVD, ALD or any combination thereof can be used to form a photoresist layer on the surface of the semiconductor structure 120 provided with the thermally conductive body 130, and the photoresist layer is patterned to obtain a second mask layer with a plurality of second openings. The semiconductor structure 120 is etched based on the second mask layer to form a plurality of heat dissipation channels 123. Wherein, the plurality of heat dissipation channels 123 can be arranged in a spaced manner or in a communicating manner.

[0143] In some examples, the heat dissipation channel 123 can extend in a straight line along a certain direction and penetrate through the semiconductor structure 120, so that both ends of the heat dissipation channel 123 are located at different surfaces of the semiconductor structure 120. In other examples, the heat dissipation channel 123 can also extend in any other feasible manner, which is not limited by the present disclosure.

[0144] In this way, the heat-conducting liquid 150 in the cavity structure 160 can flow into the semiconductor structure 120 through the heat-dissipation channel 123, so as to increase the surface area of the heat-conducting liquid 150 in contact with the semiconductor structure 120, thereby improving the heat exchange capacity of the heat-conducting liquid 150, i.e., improving the rate of heat conduction of the heat-conducting liquid 150 to the heat generated by the semiconductor structure 120, thereby speeding up the cooling process of the semiconductor structure 120, and improving the electrical performance and reliability of the entire semiconductor device 100.

[0145] The above description is merely a specific implementation of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any changes or replacements within the technical scope of the present disclosure, which can be easily conceived by those skilled in the art, shall be covered by the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.

Claims

1. A semiconductor device, characterized in that, include: Semiconductor structure; A plurality of heat conductors are disposed on at least a portion of the surface of the semiconductor structure; A heat-conducting wall is disposed on the side of the plurality of heat conductors away from the semiconductor structure; A thermally conductive liquid is located between the plurality of thermally conductive bodies.

2. The semiconductor device according to claim 1, characterized in that, The heat conductor is a heat-conducting particle, wherein the particle size is greater than or equal to 10 nm and less than or equal to 5 μm.

3. The semiconductor device according to claim 1, characterized in that, The thermally conductive liquid includes electronic fluorinated liquid or silicone oil.

4. The semiconductor device according to claim 1, characterized in that, The semiconductor structure includes a body and a metal layer disposed on the surface of the body, and the heat conductor is disposed between the metal layer and the heat-conducting wall.

5. The semiconductor device according to claim 4, characterized in that, The heat conductor and the metal layer are an integral structure.

6. The semiconductor device according to any one of claims 1-5, characterized in that, There is a closed cavity structure between the heat-conducting wall and the surface of the semiconductor structure; The semiconductor structure is provided with a heat dissipation channel that runs through the semiconductor structure and is connected to the cavity structure at both ends.

7. The semiconductor device according to claim 6, characterized in that, The semiconductor device further includes a heat sink and a circulation device. The heat-conducting wall is provided with a first opening and a second opening, both of which are in communication with the cavity structure. The heat sink has a first interface and a second interface. The first interface is in communication with the first opening, and the second interface is in communication with the second opening through the circulation device. The circulation device is used to drive the heat-conducting liquid to circulate between the cavity structure and the heat sink.

8. The semiconductor device according to any one of claims 1-5, characterized in that, The semiconductor structure includes a substrate and a plurality of semiconductor units spaced apart on the substrate; The thermally conductive wall surrounds the substrate and the plurality of semiconductor units.

9. A method for fabricating a semiconductor device, characterized in that, include: Forming a semiconductor structure; A plurality of thermal conductors are formed on at least a portion of the surface of the semiconductor structure; A heat-conducting wall is formed on the side of the plurality of heat conductors away from the semiconductor structure; A heat-conducting liquid is formed between the plurality of heat conductors.

10. The preparation method according to claim 9, characterized in that, The plurality of heat conductors are formed, including: A metal layer is formed on at least a portion of the surface of the semiconductor structure; A portion of the metal layer is removed to form the plurality of heat conductors on the side of the metal layer away from the semiconductor structure.

11. The preparation method according to claim 9, characterized in that, Forming the heat-conducting wall includes: A thermally conductive film is formed on the side of the plurality of thermally conductive elements away from the semiconductor structure, and a closed cavity structure is formed between the thermally conductive film and the surface of the semiconductor structure; The thermally conductive film is cured to form the thermally conductive wall.

12. The preparation method according to claim 9, characterized in that, Before forming the heat-conducting wall, it also includes: A heat dissipation channel is formed on the surface of the semiconductor structure on which the heat conductor is disposed.

13. An electronic device, characterized in that, It includes a motherboard and a semiconductor device disposed on the motherboard as described in any one of claims 1-8.

14. The electronic device according to claim 13, characterized in that, Also includes: Radiators and circulation systems; The heat-conducting wall is provided with a first opening and a second opening, both of which are connected to a closed cavity structure between the heat-conducting wall and the surface of the semiconductor structure; the heat sink has a first interface and a second interface, the first interface being connected to the first opening, and the second interface being connected to the second opening through the circulation device; the circulation device is used to drive the heat-conducting liquid to circulate between the cavity structure and the heat sink.

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