Hole transport layer material and preparation method thereof, hole transport layer and application thereof

Abstract

The invention provides a hole transport layer material, a preparation method of the hole transport layer material, a hole transport layer and application of the hole transport layer material. The hole transport layer material comprises p-type doped tin oxide. In the p-type doped tin oxide, the mass content of a p-type doping element is 0.5 to 50 percent. According to the invention, p-type doping is carried out in tin oxide, so that tin oxide used as an electron transport layer material is converted from an n-type semiconductor to a p-type semiconductor, and through reasonable doping amount, the tin oxide is used as a hole transport layer material, and the material has high conductivity, high transparency and durability; according to the preparation method, the problem that the NiOx hole transport layer material forms oxygen vacancies due to the existence of Ni < 3 + > so as to generate oxidation-reduction reaction with a perovskite layer which is in direct contact with the NiOx hole transport layer material can be solved while the efficiency of the prepared cell is not reduced, and the corrosion of the oxygen vacancies to perovskite is avoided. Therefore, the p-type doped tin oxide used as the hole transport layer material for replacing NiOx has a wide prospect.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of solar cells, and particularly relates to a hole transport layer material, a preparation method thereof, a hole transport layer and application thereof. BACKGROUND

[0002] Titanium mine solar cell is a photovoltaic technology that attracts much attention, and its high efficient photoelectric conversion performance has attracted wide attention. In the design of cell components, nickel oxide (NiO x ) as a common hole transport layer material is widely used in perovskite cells. Although nickel oxide has achieved some success as a hole transport layer in perovskite cells in the past research, it also has some challenges that cannot be ignored. First, the electrical conductivity of nickel oxide is relatively low, which may limit the performance of the cell. Second, the traditional NiO x hole transport layer is prone to form oxygen vacancies due to the presence of Ni 3+ , which causes redox reaction with the perovskite layer in direct contact, which greatly limits the stability of perovskite in industrial production.

[0003] Therefore, it is urgent to find a substitute material for NiO x hole transport layer material to solve the problem of oxygen vacancy formation due to the presence of Ni 3+ , which causes redox reaction with the perovskite layer in direct contact. SUMMARY

[0004] In view of the deficiencies of the prior art, the purpose of the present application is to provide a hole transport layer material, a preparation method thereof, a hole transport layer and application thereof. The present application converts the tin oxide as an electron transport layer material from an n-type semiconductor to a p-type semiconductor by p-type doping in tin oxide, and through a reasonable doping amount, so that it is used as a hole transport layer material. The material has high conductivity, high transparency and durability, which can ensure that the efficiency of the prepared cell does not decrease, and solves the problem of oxygen vacancy formation due to the presence of Ni x in the NiO 3+ hole transport layer material, which causes redox reaction with the perovskite layer in direct contact. Therefore, the p-type doped tin oxide is used as a hole transport layer material to replace NiO x , which has broad prospects in perovskite cells and provides strong support for the further improvement of perovskite cells. This not only has a promoting effect on solar cell technology, but also will have a profound impact in the field of renewable energy.

[0005] To achieve the purpose of the present application, the following technical solutions are adopted:

[0006] In a first aspect, the present application provides a hole transport layer material, which comprises p-doped tin oxide;

[0007] The mass content of the p-doped element in the p-doped tin oxide is 0.5-50%.

[0008] The present application changes the energy band structure of tin oxide by p-doping, and changes the tin oxide from an n-type semiconductor to a p-type semiconductor. x The hole transport layer material avoids the problem of the formation of oxygen vacancies due to the presence of Ni 3+ , which causes a redox reaction with the perovskite layer in direct contact, thereby avoiding the corrosion of the perovskite by oxygen vacancies. x The p-doped tin oxide as a hole transport layer material has broad prospects in perovskite solar cells and provides strong support for the further improvement of perovskite solar cells, which not only promotes solar cell technology but also has a profound impact on the field of renewable energy.

[0009] In the present application, the p-doped tin oxide has high conductivity, and the interaction between uniformly dispersed conductive nanoparticles forms a conductive film, and the charge movement in the conductive film can achieve high transmittance.

[0010] In the present application, the mass content of the p-doped element is 0.5-50%, for example, it can be 0.5%, 1%, 5%, 10%, 20%, 30%, 40%, or 50%, etc.

[0011] In the present application, if the content of the p-doped element in the p-doped tin oxide is too low, the purpose of changing the energy band structure of tin oxide cannot be achieved, and the function of the hole transport layer cannot be realized.

[0012] As a preferred technical solution of the present application, the p-doped element comprises antimony.

[0013] Preferably, the mass content of the p-doped element in the p-doped tin oxide is 10-30%.

[0014] In the present application, the mass content of the p-type doping element is preferably 10-30%, which can better achieve the conversion of tin oxide from n-type semiconductor to p-type semiconductor, thereby more fully exerting the function of the hole transport layer.

[0015] In a second aspect, the present application provides a preparation method of the hole transport layer material according to the first aspect, which comprises the following steps:

[0016] (1) mixing a p-type doping source, a tin source and a solvent to obtain a precursor solution;

[0017] (2) pyrolyzing the precursor solution and performing sintering treatment to obtain the hole transport layer material.

[0018] As a preferred technical solution of the present application, the p-type doping source in step (1) comprises an antimony source.

[0019] Preferably, the antimony source comprises antimony acetate.

[0020] Preferably, the tin source in step (1) comprises tin 2-ethylhexanoate.

[0021] Preferably, the solvent in step (1) comprises an alkyl carboxylic acid and / or toluene, preferably a mixture of an alkyl carboxylic acid and toluene.

[0022] Preferably, the molar ratio of the p-type doping source to the tin source in step (1) is (0.5-50):(50-99.5), wherein the selected range of the p-type doping source "0.5-50" can be 0.5, 1, 5, 10, 20, 30, 40 or 50, etc., and the selected range of the tin source "50-99.5" can be 50, 60, 70, 80, 90, 95 or 99.5, etc., preferably (10-30):(70-90).

[0023] In the present application, if the molar ratio of the p-type doping source to the tin source is too small, i.e. the amount of the p-type doping source is too small, the purpose of changing the energy band structure of tin oxide cannot be achieved, thereby the function of the hole transport layer cannot be realized; if the molar ratio of the p-type doping source to the tin source is too large, i.e. the amount of the p-type doping source is too large, the p-type doping element cannot be fully doped into the tin oxide lattice, resulting in lattice mismatch and reducing the performance of the device.

[0024] As a preferred technical solution of the present application, the pyrolysis in step (2) comprises a flame spray pyrolysis method, and the specific steps comprise:

[0025] The precursor solution is sent into a nozzle and then sprayed into a flame in the form of mist droplets for thermal decomposition.

[0026] The flame spray pyrolysis method adopted in the present application can achieve accurate control of the amount of antimony doping.

[0027] Preferably, the precursor solution is fed into the nozzle at a flow rate of 7-12 mL / min, for example 7 mL / min, 8 mL / min, 9 mL / min, 10 mL / min, 11 mL / min or 12 mL / min, etc.

[0028] Preferably, the step of forming the mist of droplets comprises:

[0029] The precursor solution is dispersed using a dispersant to form the mist of droplets.

[0030] Preferably, the dispersant comprises oxygen.

[0031] Preferably, the dispersant is fed at a flow rate of 13-15 mL / min, for example 13 mL / min, 13.5 mL / min, 14 mL / min, 14.5 mL / min or 15 mL / min, etc.

[0032] Preferably, the flame is produced from a fuel and an oxidant, the fuel being fed at a flow rate of 1-1.5 mL / min, for example 1 mL / min, 1.1 mL / min, 1.2 mL / min, 1.3 mL / min, 1.4 mL / min or 1.5 mL / min, etc., and the oxidant being fed at a flow rate of 2-2.5 mL / min, for example 2 mL / min, 2.1 mL / min, 2.2 mL / min, 2.3 mL / min, 2.4 mL / min or 2.5 mL / min, etc.

[0033] Preferably, the fuel comprises methane and the oxidant comprises oxygen.

[0034] Preferably, the sintering process of step (2) is carried out at a temperature of 1000-1400 °C, for example 1000 °C, 1100 °C, 1200 °C, 1300 °C, 1400 °C, etc., for a time period of 20-30 min, for example 20 min, 22 min, 25 min, 27 min or 30 min, etc.

[0035] In a third aspect, the present application provides a hole transport layer, which is prepared from the hole transport material of the first aspect.

[0036] As a preferred technical solution of the present application, the thickness of the III is 10-30 nm, for example 10 nm, 15 nm, 20 nm, 25 nm or 30 nm, etc.

[0037] As a preferred technical solution of the present application, the method for preparing the hole transport layer comprises a magnetron sputtering method, and the specific process conditions of the magnetron sputtering method comprise:

[0038] The flow rate of the working gas is 40-80 sccm, for example, can be 40 sccm, 50 sccm, 60 sccm, 70 sccm or 80 sccm, etc., the chamber pressure is 0.3-0.7 Pa, for example, can be 0.3 Pa, 0.4 Pa, 0.5 Pa, 0.6 Pa or 0.7 Pa, etc., the sputtering power is 50-250 W, for example, can be 50 W, 100 W, 150 W, 200 W or 250 W, etc.

[0039] It should be noted that by monitoring and adjusting the parameters such as sputtering power, deposition rate and gas pressure, the uniformity and stability of the film layer can be ensured.

[0040] Preferably, the working gas comprises argon.

[0041] Preferably, before the working gas is introduced, the reaction chamber is first evacuated to a vacuum degree ≤5×10 -4 Pa, for example, can be 5×10 -4 Pa, 1×10 -4 Pa, 5×10 -5 Pa or 1×10 -5 Pa, etc.

[0042] In a fourth aspect, the present application provides a perovskite solar cell, which comprises a substrate, a hole transport layer as described in the third aspect, a perovskite light-absorbing layer, an electron transport layer and an electrode layer.

[0043] Preferably, the substrate comprises a transparent conductive glass, and the transparent conductive glass comprises FTO glass.

[0044] The present application does not limit the chemical composition of the perovskite light-absorbing layer, which only needs to meet the structure of ABX3, wherein A can be formamidinium ion, methylamine ion or cesium ion, B can be lead ion or rubidium ion, and X is halogen ion.

[0045] The present application does not limit the preparation method of the perovskite light-absorbing layer, which is exemplified by, for example, a solution method.

[0046] Preferably, the material of the electron transport layer comprises tin dioxide and / or C 60 .

[0047] The present application does not limit the preparation method of the electron transport layer, which is exemplified by, for example, a thermal evaporation method or an ALD method.

[0048] Preferably, the electrode layer comprises any one of a copper electrode layer, a gold electrode layer or a silver electrode layer.

[0049] The present application does not limit the preparation method of the electrode layer, which is exemplified by, for example, a thermal evaporation method or a magnetron sputtering method.

[0050] In a fifth aspect, the present application provides a photovoltaic module, which comprises the perovskite solar cell according to the fourth aspect.

[0051] The photovoltaic module according to the present application is not specifically limited, and is exemplified by, for example, a crystalline silicon / perovskite tandem cell.

[0052] The numerical range according to the present application includes not only the point values listed above, but also any point values between the numerical ranges listed above. Due to the limited space and for the sake of simplicity, the present application does not list the specific point values included in the range.

[0053] Compared with the prior art, the present application has the following beneficial effects:

[0054] According to the present application, the tin oxide is converted from an n-type semiconductor to a p-type semiconductor by p-type doping, and the tin oxide is used as a hole transport layer material by a reasonable doping amount. The material has high conductivity, high transparency and durability, and can ensure that the efficiency of the prepared battery does not decrease, and solve the problem of redox reaction between the perovskite layer and the hole transport layer material due to the existence of NiO x The hole transport layer material has high conductivity, high transparency and durability, and can ensure that the efficiency of the prepared battery does not decrease, and solve the problem of redox reaction between the perovskite layer and the hole transport layer material due to the existence of NiO 3+ Therefore, the p-type doped tin oxide is used as a hole transport layer material to replace NiO x The perovskite solar cell has broad prospects and provides strong support for further improvement of the perovskite solar cell, which not only promotes the solar cell technology, but also has a profound impact on the field of renewable energy. BRIEF DESCRIPTION OF DRAWINGS

[0055] Figure 1 The stability comparison curve of the crystalline silicon / perovskite tandem cell prepared in Example 5 and Comparative Example 4 in the present application is shown in the figure. DETAILED DESCRIPTION

[0056] The technical solutions of the present application will be further described through specific embodiments. Those skilled in the art should understand that the embodiments are only used to help understand the present application, and should not be regarded as specific limitations on the present application.

[0057] Example 1

[0058] The present embodiment provides a preparation method of a hole transport layer material, which comprises the following steps:

[0059] (1) mixing antimony acetate and tin 2-ethylhexanoate, and then dissolving the obtained mixture in a mixed solvent composed of alkyl carboxylic acid and toluene (volume ratio of 1:1) to obtain a precursor solution, wherein the molar ratio of antimony acetate to tin 2-ethylhexanoate is 0.5:99.5;

[0060] (2) feeding the precursor solution into a nozzle at a flow rate of 9 mL / min, and then dispersing with oxygen as a dispersant at a flow rate of 14 L / min to obtain mist droplets, and then spraying into a flame prepared by premixing methane and oxygen, wherein the flow rate of methane is 1.2 L / min, the flow rate of oxygen is 2.2 L / min, and after the end, the exhaust gas is filtered by a reticular filter at a pumping speed of 20 m 3 / h, and the powder is collected, and then sintering treatment is performed at 1200℃ to obtain a hole transport layer material composed of antimony-doped tin oxide, wherein the content of antimony in the antimony-doped tin oxide is 0.5%.

[0061] The embodiment also provides a hole transport layer prepared from the hole transport layer material, and the specific preparation steps include:

[0062] The hole transport layer material is pressed to form a target material, and the target material is loaded into a magnetron sputtering device, and then the sputtering chamber is pumped to 5×10 -4 Pa, and then working gas argon is introduced at a flow rate of 60 sccm for 20 min of pre-sputtering to remove the oxide layer on the surface of the target material, and after the surface oxide layer is removed and the sputtering rate tends to be stable, the sputtering shutter is opened to start sputtering, the sputtering power is set to 250 W, the chamber pressure is 0.3 Pa, and the sputtering time is 30 min to obtain a hole transport layer with a thickness of 20 nm.

[0063] The embodiment also provides a preparation method of a crystalline silicon / perovskite stacked battery, and the preparation method includes the following steps:

[0064] (Ⅰ) an n-type crystalline silicon wafer with a thickness of 150 μm is sequentially subjected to front cleaning with ozone and deionized water, back cleaning with a mixed solution of ozone and hydrofluoric acid, and finally cleaning and etching with a mixed solution of hydrofluoric acid and nitric acid, so as to form an n-type crystalline silicon wafer with double-sided suede;

[0065] (Ⅱ) the front and back surfaces of the n-type crystalline silicon wafer are deposited with 2 nm of intrinsic hydrogenated amorphous silicon passivation layers on both sides by PECVD to form a first passivation layer on the front surface of the n-type crystalline silicon wafer, and then 9 nm of p-type hydrogenated amorphous silicon doped layers and 6 nm of n-type hydrogenated amorphous silicon doped layers are deposited on both sides respectively, so as to form a second passivation layer on the back surface of the n-type crystalline silicon wafer, thereby forming a symmetric double-sided battery structure.

[0066] (III) 30 nm ITO is deposited on the n-type hydrogenated amorphous silicon doped layer by sputtering, and then 20 nm antimony-doped tin oxide layer is deposited on the surface of the ITO layer by using the preparation method of the hole transport layer provided above;

[0067] (IV) 400 nm perovskite light-absorbing layer (CH(NH2)2PbI3) is sequentially deposited on the surface of the antimony-doped tin oxide layer 0.83 Cs 0.17 Pb(I 0.82 Br 0.18 )3), 1 nm LiF and 15 nm C 60 layer are deposited, and then 15 nm SnO2 layer is further deposited by ALD method;

[0068] (V) 110 nm ITO is deposited on the front and back surfaces of the above-prepared battery respectively, 180 nm Ag grid lines are screen-printed on the back surface of the battery, and then sintering and curing are performed, and then 1 μm Ag and 90 nm MgF2 are sequentially evaporated on the front surface of the battery by using a mask plate.

[0069] Example 2

[0070] The difference between this embodiment and Example 1 is that in step (1), the molar ratio of antimony acetate to tin 2-ethylhexanoate is 2:98.

[0071] The rest of the preparation method and parameters remain the same as those of Example 1.

[0072] Example 3

[0073] The difference between this embodiment and Example 1 is that in step (1), the molar ratio of antimony acetate to tin 2-ethylhexanoate is 5:95.

[0074] The rest of the preparation method and parameters remain the same as those of Example 1.

[0075] Example 4

[0076] The difference between this embodiment and Example 1 is that in step (1), the molar ratio of antimony acetate to tin 2-ethylhexanoate is 10:90.

[0077] The rest of the preparation method and parameters remain the same as those of Example 1.

[0078] Example 5

[0079] The difference between this embodiment and Example 1 is that in step (1), the molar ratio of antimony acetate to tin 2-ethylhexanoate is 20:80.

[0080] The rest of the preparation method and parameters remain the same as those of Example 1.

[0081] Example 6

[0082] The difference between this embodiment and embodiment 1 is that in step (1), the molar ratio of antimony acetate and tin 2-ethylhexanoate is 30:70.

[0083] The rest of the preparation method and parameters remain the same as embodiment 1.

[0084] Embodiment 7

[0085] The difference between this embodiment and embodiment 1 is that in step (1), the molar ratio of antimony acetate and tin 2-ethylhexanoate is 40:60.

[0086] The rest of the preparation method and parameters remain the same as embodiment 1.

[0087] Embodiment 8

[0088] The difference between this embodiment and embodiment 1 is that in step (1), the molar ratio of antimony acetate and tin 2-ethylhexanoate is 50:50.

[0089] The rest of the preparation method and parameters remain the same as embodiment 1.

[0090] Embodiment 9

[0091] The embodiment provides a preparation method of a hole transport layer material, and the preparation method comprises the following steps:

[0092] (1) mixing antimony acetate and tin 2-ethylhexanoate, and then dissolving the obtained mixture in a mixed solvent composed of alkyl carboxylic acid and toluene (the volume ratio of the two is 1:1) to obtain a precursor solution, wherein the molar ratio of antimony acetate and tin 2-ethylhexanoate is 20:80;

[0093] (2) feeding the precursor solution into a nozzle at a flow rate of 9 mL / min, and then dispersing by using oxygen as a dispersant at a flow rate of 14 L / min to obtain mist droplets, and then spraying into a flame prepared by premixing methane and oxygen to perform thermal decomposition, wherein the flow rate of methane is 1.2 L / min, the flow rate of oxygen is 2.2 L / min, after the end, the exhaust gas is filtered by a reticular filter through a pumping speed of 20 m 3 / h, and the powder is collected, and then sintering treatment is performed at 1200 ℃, so that a hole transport layer material composed of antimony-doped tin oxide is obtained, and the content of antimony in the antimony-doped tin oxide is 20%.

[0094] The embodiment also provides a hole transport layer, which is prepared from the above hole transport layer material, and the specific preparation steps comprise:

[0095] The above hole transport layer material is pressed to form a target material, and the target material is loaded into a magnetron sputtering device, and then the sputtering chamber is pumped to 5x10-4 Pa, then argon working gas with a flow rate of 60 sccm is introduced for 20 min of pre-sputtering to remove the oxide layer on the target surface. After the surface oxide layer is removed and the sputtering rate tends to stabilize, the sputtering baffle is turned on and sputtering begins. The sputtering power is set at 250 W, the chamber pressure is 0.3 Pa, and the sputtering time is 30 min, resulting in a hole transport layer with a thickness of 20 nm.

[0096] This embodiment also provides a method for fabricating a perovskite solar cell, the method comprising the following steps:

[0097] Using FTO glass as a substrate, an antimony-doped tin oxide layer with a thickness of 20 nm was deposited on the substrate using the hole transport layer preparation method described above. Then, a perovskite light-absorbing layer (CH(NH2)2PbI3) with a thickness of 500 nm was deposited sequentially. 0.83 Cs 0.17 PbI3), C with a thickness of 15 nm 60 The perovskite solar cell is obtained by constructing a SnO2 layer with a thickness of 15 nm and a copper electrode layer with a thickness of 110 nm.

[0098] Example 10

[0099] The difference between this embodiment and embodiment 5 is that the sintering temperature in step (2) is 800℃.

[0100] The remaining preparation methods and parameters are consistent with those in Example 5.

[0101] Example 11

[0102] The difference between this embodiment and embodiment 5 is that the sintering temperature in step (2) is 1500℃.

[0103] The remaining preparation methods and parameters are consistent with those in Example 5.

[0104] Comparative Example 1

[0105] The difference between this comparative example and Example 1 is that the amount of antimony acetate added in step (1) is adjusted so that the antimony content in the antimony-doped tin oxide is 0.1%.

[0106] The remaining preparation methods and parameters are consistent with those in Example 1.

[0107] Comparative Example 2

[0108] The difference between this comparative example and Example 1 is that the amount of antimony acetate added in step (1) is adjusted so that the antimony content in the antimony-doped tin oxide is 60%.

[0109] The remaining preparation methods and parameters are consistent with those in Example 1.

[0110] Comparative Example 3

[0111] The difference between this comparative example and Example 1 is that antimony acetate is replaced by equal mass of tin 2-ethylhexanoate in step (1).

[0112] The rest of the preparation method and parameters remain the same as Example 1.

[0113] Comparative Example 4

[0114] The difference between this comparative example and Example 5 is that steps (1) and (2) are not performed, and instead, a nickel oxide is prepared as a hole transport layer material to prepare a hole transport layer.

[0115] The rest of the preparation method and parameters remain the same as Example 5.

[0116] Figure 1 The stability comparison curves of the crystalline silicon / perovskite tandem cells prepared in Example 5 and Comparative Example 4 are shown, and it can be seen from the figure that after 500 h of continuous light exposure, the cell prepared in Example 5 can still maintain more than 85% of the initial efficiency, which is significantly higher than the cell prepared based on the nickel oxide hole transport layer.

[0117] Performance test

[0118] The cells prepared in the above examples and comparative examples are subjected to photoelectric performance test, and the test conditions are: the effective area of the cell is 1 cm 2 , AM1.5, 1000 W / m 2 , 25±2℃.

[0119] In addition, stability test is also carried out, and the test conditions are: under the condition of no packaging, under the condition of nitrogen atmosphere, continuous light exposure for 500 h, and the ratio of the efficiency after 500 h to the initial efficiency is recorded.

[0120] The above test results are shown in Table 1.

[0121] Table 1

[0122]

[0123]

[0124] Analysis:

[0125] As can be seen from the above table, the antimony-doped tin oxide is used to replace the nickel oxide as a hole transport layer, and through reasonable control of the doping amount, the efficiency of the prepared cell can be ensured without decreasing, and the problem of Ni 3+The existence of the oxygen vacancies causes the formation of oxygen vacancies, thereby avoiding the corrosion of the perovskite by the oxygen vacancies, and improving the stability of the battery.

[0126] From Example 5 and Examples 10-11, it can be seen that if the sintering temperature in step (2) is too low, the target material will not be dense enough; if the sintering temperature in step (2) is too high, the target material will be over-sintered, resulting in an increase in the pressure in the pores, large pores and abnormal grains, and a decrease in the density.

[0127] From Example 1 and Comparative Examples 1-2, it can be seen that if the content of antimony in the antimony-doped tin oxide is too low, the purpose of changing the energy band structure of the tin oxide cannot be achieved, the function of the hole transport layer cannot be realized, the energy level of the prepared battery is not matched, and the device performance is affected; if the content of antimony in the antimony-doped tin oxide is too high, the antimony element cannot be fully doped into the tin oxide lattice, the energy level of the prepared battery is not matched, and the device performance is affected.

[0128] From Example 1 and Comparative Example 3, it can be seen that if only tin oxide is used as the hole transport layer, the function of the hole transport cannot be realized, the holes and electrons cannot be timely separated and transported, and the performance of the battery device is seriously affected.

[0129] From Example 5 and Comparative Example 4, it can be seen that the use of antimony-doped tin oxide instead of nickel oxide can solve the problems existing in the nickel oxide hole transport layer while ensuring that the efficiency of the prepared battery does not decrease, avoid the corrosion of the perovskite by the oxygen vacancies, and improve the stability of the battery.

[0130] The applicant declares that the process of the present application is illustrated by the above examples, but the present application is not limited to the above process steps, i.e. it does not mean that the present application must rely on the above process steps to be implemented. It should be understood by those skilled in the art that any improvement on the present application, equivalent replacement of the materials selected by the present application, addition of auxiliary ingredients, selection of specific methods, etc. fall within the scope of protection and disclosure of the present application.

Claims

1. A hole transport layer material, characterized in that, The hole transport layer material includes p-type doped tin oxide; In the p-type doped tin oxide, the mass content of the p-type dopant element is 0.5-50%.

2. The hole transport layer material according to claim 1, characterized in that, The p-type doping element includes antimony; Preferably, in the p-type doped tin oxide, the mass content of the p-type dopant element is 10-30%.

3. A method for preparing a hole transport layer material as described in claim 1 or 2, characterized in that, The preparation method includes the following steps: (1) Mix the p-type doping source, tin source and solvent to obtain a precursor solution; (2) The precursor solution is pyrolyzed and sintered to obtain the hole transport layer material.

4. The preparation method according to claim 3, characterized in that, The p-type doping source in step (1) includes an antimony source; Preferably, the antimony source includes antimony acetate; Preferably, the tin source in step (1) comprises tin 2-ethylhexanoate; Preferably, the solvent in step (1) comprises alkyl carboxylic acids and / or toluene, and is preferably a mixture of alkyl carboxylic acids and toluene; Preferably, the mass ratio of the p-type doped source to the tin source in step (1) is (0.5-50):(50-99.5), and more preferably (10-30):(70-90).

5. The preparation method according to claim 3 or 4, characterized in that, The pyrolysis method described in step (2) includes flame spray pyrolysis, and the specific steps include: The precursor solution is fed into a nozzle and then sprayed into the flame in the form of atomized droplets for thermal decomposition. Preferably, the flow rate of the precursor solution fed into the nozzle is 7-12 mL / min; Preferably, the step of forming the mist-like droplets includes: The precursor solution is dispersed using a dispersant to form mist-like droplets; Preferably, the flow rate of the dispersant is 13-15 L / min; Preferably, the flame is generated by fuel and oxidant, wherein the flow rate of the fuel is 1-1.5 L / min and the flow rate of the oxidant is 2-2.5 L / min; Preferably, the sintering treatment in step (2) is performed at a temperature of 1000-1400℃ for 20-30 minutes.

6. A hole transport layer, characterized in that, The hole transport layer is prepared from the hole transport layer material described in claim 1 or 2.

7. The hole transport layer according to claim 6, characterized in that, The thickness of the hole transport layer is 10-30 nm.

8. The hole transport layer according to claim 6 or 7, characterized in that, The method for fabricating the hole transport layer includes magnetron sputtering, and the specific process conditions for the magnetron sputtering method include: The working gas flow rate is 40-80 sccm, the chamber pressure is 0.3-0.7 Pa, and the sputtering power is 50-250 W.

9. A perovskite solar cell, characterized in that, The perovskite solar cell includes a substrate, a hole transport layer as described in any one of claims 6-8, a perovskite light-absorbing layer, an electron transport layer, and an electrode layer.

10. A photovoltaic module, characterized in that, The photovoltaic module includes the perovskite solar cell as described in claim 9.

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