Stacked solar cells and photovoltaic modules

Abstract

The application relates to the technical field of solar cells, in particular to a laminated solar cell and a photovoltaic module. In the embodiment of the application, sunlight can directly irradiate on a light absorption layer without passing through a first conductive layer, a first charge transport layer, a second conductive layer and a second charge transport layer, so that the light utilization rate can be improved, more carriers can be generated, the carrier collection efficiency is improved, and the short-circuit current density, the fill factor and the conversion efficiency are improved, and the performance of the cell is improved. In addition, compared with the mode that the second conductive layer and the second charge transport layer are arranged in an integral layer on the side of the light absorption layer away from the cell substrate, the use of the second conductive layer material and the second charge transport layer material can be reduced, so that the manufacturing cost is reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of photovoltaic modules, and particularly relates to a laminated solar cell and a photovoltaic module. BACKGROUND

[0002] The carrier collection efficiency of a solar cell refers to the proportion of photo-generated carriers in the cell that are effectively collected and converted into electrical energy, and is one of the key indicators for measuring the performance of a solar cell. The structure of a solar cell has a key influence on the carrier collection efficiency. The carrier collection efficiency of a solar cell in the related art is low, which affects the performance of the solar cell. SUMMARY

[0003] Therefore, it is necessary to provide a laminated solar cell and a photovoltaic module to improve the performance of the cell.

[0004] According to an aspect of the present application, an embodiment of the present application provides a laminated solar cell. The laminated solar cell comprises a cell substrate, a first laminated structure, a second laminated structure, and a light absorption layer. The cell substrate has a first surface and a second surface arranged oppositely along the thickness direction of the cell substrate. The first laminated structure comprises a first conductive layer and a first charge transport layer which are stacked on the first surface, the first laminated structure covers at least part of the first surface, and the first laminated structure and the cell substrate form a combined structure. The second laminated structure comprises an insulating barrier layer, a second conductive layer, and a second charge transport layer which are stacked on a side of the combined structure away from the second surface. A normal projection of the first charge transport layer on the cell substrate at least comprises an area which does not overlap with a normal projection of the insulating barrier layer on the cell substrate. Normal projections of the second conductive layer and the second charge transport layer on the cell substrate are located within the range of the normal projection of the insulating barrier layer on the cell substrate. The light absorption layer is arranged on a side of the second laminated structure away from the cell substrate. A part of the light absorption layer is in contact with the second charge transport layer, and another part of the light absorption layer is in contact with the first charge transport layer.

[0005] In some embodiments, an overlapping area of the normal projections of the second conductive layer and the light absorption layer on the cell substrate is located within the range of the normal projection of the second charge transport layer on the cell substrate. The area of the overlapping area of the normal projections of the second conductive layer and the light absorption layer on the cell substrate is smaller than the area of the normal projection of the second charge transport layer on the cell substrate.

[0006] In some embodiments, the normal projection of the second charge transport layer on the cell substrate overlaps with the overlapping projection of the insulating barrier layer and the light absorption layer on the cell substrate.

[0007] In some embodiments, the area of the normal projection of the second conductive layer on the cell substrate is smaller than the area of the normal projection of the insulating barrier layer on the cell substrate.

[0008] In some embodiments, the ratio of the area of the second conductive layer on the battery substrate to the area of the insulating barrier layer on the battery substrate is 0.4 to 0.8.

[0009] In some embodiments, the ratio of the area of the second conductive layer on the battery substrate to the area of the first surface is 0.2 to 0.5.

[0010] In some embodiments, the second stack structure comprises a plurality of stack portions, the plurality of stack portions being spaced apart along a first direction. The stack portions comprise first sub-layers, second sub-layers and third sub-layers stacked on the first stack structure, all the first sub-layers forming the insulating barrier layer, all the second sub-layers forming the second conductive layer, and all the third sub-layers forming the second charge transport layer. The first direction intersects the thickness direction of the battery substrate.

[0011] In some embodiments, the first sub-layers, the second sub-layers and the third sub-layers all extend longitudinally along a second direction. The first direction, the second direction and the thickness direction of the battery substrate all intersect each other.

[0012] In some embodiments, the second conductive layer comprises a plurality of conductive portions, the plurality of conductive portions being spaced apart along the first direction, and the conductive portions extending longitudinally along the second direction. The first direction, the second direction and the thickness direction of the battery substrate all intersect each other.

[0013] In some embodiments, the projection of the first charge transport layer on the battery substrate and the projection of the second stack structure on the battery substrate do not overlap each other.

[0014] In some embodiments, the projection of the first charge transport layer on the battery substrate and the projection of the first conductive layer on the battery substrate overlap each other; or the projections of the first charge transport layer and the first conductive layer on the battery substrate have overlapping regions and non-overlapping regions.

[0015] In some embodiments, the first conductive layer has a plurality of hollow portions independent of each other.

[0016] In some embodiments, the first conductive layer comprises a plurality of conductive units and a connecting unit connecting the plurality of conductive units, the conductive units and the connecting unit defining the hollow portions. The first charge transport layer is in contact with at least the plurality of conductive units.

[0017] In some embodiments, the ratio of the area of the plurality of conductive units on the battery substrate to the area of the first charge transport layer on the battery substrate is 0.8 to 1.2; and / or the plurality of conductive units are arranged in a rectangular array, and two adjacent conductive units are connected by a connecting unit.

[0018] In some embodiments, the ratio of the area of the insulating barrier layer on the battery substrate in orthographic projection to the area of the first surface is 0.4 to 0.6.

[0019] In some embodiments, the first conductive layer is a transparent conductive layer; and / or, the second conductive layer is a transparent conductive layer.

[0020] In some embodiments, the material of the insulating barrier layer comprises a metal oxide or an oxide of silicon.

[0021] In some embodiments, the stacked solar cell further comprises an anti-reflective layer, which is disposed on the side of the light-absorbing layer away from the battery substrate.

[0022] According to yet another aspect of the present application, the embodiments of the present application provide a photovoltaic module, comprising a cell string, an encapsulation layer and a cover plate. The encapsulation layer is used to cover the surface of the cell string. The cover plate is used to cover the surface of the encapsulation layer away from the cell string. The cell string is connected by a plurality of stacked solar cells according to any one of the above embodiments.

[0023] In the stacked solar cell and the photovoltaic module described above, the first conductive layer, the first charge transport layer, the second conductive layer and the second charge transport layer are disposed on the side of the light-absorbing layer facing the battery substrate, and a part of the light-absorbing layer is in contact with the first charge transport layer and another part of the light-absorbing layer is in contact with the second charge transport layer, so that the electron-hole pairs generated by the light-absorbing layer under the irradiation of sunlight can be transmitted through the first charge transport layer and the second charge transport layer, respectively. In this process, since the sunlight can directly irradiate on the light-absorbing layer without passing through the first conductive layer, the first charge transport layer, the second conductive layer and the second charge transport layer, the light utilization rate can be improved, so that more carriers can be generated, the carrier collection efficiency is improved, and the short-circuit current density, the fill factor and the conversion efficiency are improved, thereby improving the performance of the cell. In addition, since the orthographic projection of the first charge transport layer on the battery substrate at least comprises a region which does not overlap with the orthographic projection of the insulating barrier layer on the battery substrate, that is, the insulating barrier layer is not entirely covered, and since the orthographic projections of the second conductive layer and the second charge transport layer on the battery substrate are located within the orthographic projection of the insulating barrier layer on the battery substrate, that is, the second conductive layer and the second charge transport layer are not entirely covered, compared with the way of entirely covering the second conductive layer and the second charge transport layer on the side of the light-absorbing layer away from the battery substrate, the use of the second conductive layer material and the second charge transport layer material can be reduced, thereby facilitating the reduction of the manufacturing cost.

[0024] Additional aspects and advantages of the embodiments of the present application will be in part apparent and in part pointed out hereinafter. BRIEF DESCRIPTION OF DRAWINGS

[0025] Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the implementations. The detailed description is made with reference to the accompanying drawings.

[0026] Figure 1 A cross-sectional view of a stacked solar cell in some embodiments of the present application;

[0027] Figure 2 A cross-sectional view of a first stacked structure and a cell substrate in cooperation in some embodiments of the present application;

[0028] Figure 3 A cross-sectional view of a first stacked structure and a cell substrate in cooperation in some embodiments of the present application;

[0029] Figure 4 A cross-sectional view of a first stacked structure and a cell substrate in cooperation in some embodiments of the present application;

[0030] Figure 5 A cross-sectional view of a first stacked structure and a cell substrate in cooperation in some embodiments of the present application;

[0031] Figure 6 A cross-sectional view of a first stacked structure, a second stacked structure, and a cell substrate in cooperation in some embodiments of the present application;

[0032] Figure 7 A cross-sectional view of a first stacked structure, a second stacked structure, and a cell substrate in cooperation in some embodiments of the present application;

[0033] Figure 8 A schematic view of a stacked portion in some embodiments of the present application;

[0034] Figure 9 A schematic view of a second stacked structure in a top view in some embodiments of the present application;

[0035] Figure 10 A schematic view of a second stacked structure and a light absorbing layer in cooperation in a top view in some embodiments of the present application;

[0036] Figure 11 A schematic view of an insulating barrier layer, a second conductive layer, and a light absorbing layer in cooperation in a top view in some embodiments of the present application;

[0037] Figure 12A schematic view of the insulating barrier layer, the second conductive layer, the light absorbing layer and the metal electrode in some embodiments of the present application from a top view;

[0038] Figure 13 A schematic view of the cross-sectional structure of the stacked solar cell in some embodiments of the present application;

[0039] Figure 14 A schematic view of the cross-sectional structure of the stacked solar cell in some embodiments of the present application;

[0040] Figure 15 A schematic view of the cross-sectional structure of the stacked solar cell in some embodiments of the present application;

[0041] Figure 16 A schematic view of the cross-sectional structure of the stacked solar cell in some embodiments of the present application;

[0042] Figure 17 A schematic view of the cross-sectional structure of the stacked solar cell in some embodiments of the present application;

[0043] Figure 18 A schematic view of the cross-sectional structure of the stacked solar cell in some embodiments of the present application;

[0044] Figure 19 A schematic view of the structure of the first conductive layer in some embodiments of the present application;

[0045] Figure 20 A schematic view of the flow of the manufacturing method of the stacked solar cell in some embodiments of the present application;

[0046] Figure 21 A schematic view of the flow of step S130 in some embodiments of the present application;

[0047] Figure 22 A schematic view of the structure of the photovoltaic module in some embodiments of the present application.

[0048] Explanation of the reference signs:

[0049] Stacked solar cell 100a, 100b, 100c, 100d, 100e, 100f, 100g;

[0050] Cell substrate 110, first surface m1, second surface m2;

[0051] First stacked structure 120a, 120b, 120c, 120d, 120e, first conductive layer 121a, 121b, 121c, hollow part k, conductive unit 1211, connection unit 1212, first charge transport layer 122a, 122b, 122c, 122d, 122e;

[0052] The second stack structure 130a, 130b, 130c, 130d, the insulating barrier layer 131, the second conductive layer 132a, 132b, the second charge transport layer 133a, 133b, 133c, 133d, the stack part 1301, the first sub-layer 13011, the second sub-layer 13012, the connection end p, the third sub-layer 13013;

[0053] The light absorption layer 140;

[0054] The metal electrode 150;

[0055] The anti-reflection layer 160;

[0056] The first direction F1, the second direction F2, the thickness direction H;

[0057] The steps S110, S120, S130, S131, S132, S133, S140;

[0058] The photovoltaic module 10, the cell string 11, the encapsulation layer 12, the cover plate 13, the conductive strip 14. DETAILED DESCRIPTION

[0059] In order to make the above objectives, features and advantages of the present application more apparent, specific embodiments of the present application will be described in detail below with reference to the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. However, the present application can be practiced in a variety of ways other than those described herein without departing from the spirit of the present application, and it will be apparent to those skilled in the art that similar modifications of structure and method that are not specifically described can be resorted to without departing from the spirit of the present application. Therefore, the present application is not limited to the specific embodiments disclosed below.

[0060] In the description of the present application, it should be understood that if these terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the purpose of facilitating the description of the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0061] In addition, the terms "first", "second", and the like, if any, are used herein for descriptive purposes only and should not be construed as indicating or implying relative importance or implicating the number of indicated technical features. Thus, a feature defined with "first", "second" can explicitly or implicitly include at least one of the features. In the description of the present application, if the term "plurality" appears, the meaning of "plurality" is at least two, for example, two, three, etc., unless otherwise explicitly specified and limited.

[0062] In the present application, unless otherwise explicitly specified and limited, if the terms "mounting", "connecting", "connecting", "fixing" and the like appear, these terms should be interpreted broadly. For example, it can be fixedly connected, or it can be detachably connected, or it can be integrated; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the internal communication of two elements or the interaction relationship between two elements, unless otherwise explicitly limited. It should be noted that in the following description and the appended claims, one feature is "electrically connected" to another feature, which not only includes the direct contact between one feature and another feature to form an electric energy transmission or current transmission channel, but also includes the intermediate feature between one feature and another feature, and the one feature, the other feature and the intermediate feature between them form an electric energy transmission channel or a current transmission channel to achieve electric energy transmission or transmission. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0063] In the present application, unless otherwise explicitly specified and limited, if the first feature is described as "on" or "under" the second feature and the like, it can mean that the first and second features are in direct contact, or the first and second features are indirectly in contact through an intermediate medium. Moreover, the first feature "above", "above" and "above" the second feature can be that the first feature is directly above or obliquely above the second feature, or only indicates that the horizontal height of the first feature is higher than that of the second feature. The first feature "below", "below" and "below" the second feature can be that the first feature is directly below or obliquely below the second feature, or only indicates that the horizontal height of the first feature is less than that of the second feature.

[0064] It is to be understood that the terms "on," "adjacent," "connected to," "coupled to," "fixed to," or "provided on" one element or layer to another element or layer can mean that the elements or layers are in direct contact. It should be further understood that, although the terms first, second, third, etc. can be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section; for example, a first dopant type could be termed a second dopant type, and similarly, a second dopant type could be termed a first dopant type; a first dopant type and a second dopant type are different dopant types, for example, a first dopant type can be P-type and a second dopant type can be N-type, or a first dopant type can be N-type and a second dopant type can be P-type. The terms "vertical," "horizontal," "up," "down," "left," "right," and similar expressions are used herein for the purpose of explanation only and not of limitation; it is to be understood that spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientations depicted in the figures. For example, if a device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary term "below" can encompass both an orientation of above and below. Moreover, the device can be otherwise oriented (e.g., rotated 90 degrees or at other orientations) and the spatial descriptions used herein interpreted accordingly.

[0065] In addition, in the embodiments of the present application, the embodiments of the present application are described with reference to cross-sectional illustrations that are schematic representations of ideal embodiments (and intermediate structures) of the present application. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and / or tolerances, are to be expected. Thus, embodiments of the present application should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. The regions illustrated in the figures are schematic representations for

[0066] According to some embodiments of the present application, reference is made to Figure 1 , Figure 1For a cross-sectional structure schematic diagram of the stacked solar cell 100a in some embodiments of the present application, the embodiments of the present application provide a stacked solar cell 100a, which includes a cell substrate 110, a first stacked structure 120a, a second stacked structure 130a, and a light absorption layer 140.

[0067] The cell substrate 110 has a first surface m1 and a second surface m2 oppositely arranged along the thickness direction H of the cell substrate 110. The first surface m1 is a light-receiving surface, and the second surface m2 is a back light surface. It can be understood that the light-receiving surface and the back light surface are relative, and the light-receiving surface specifically refers to the surface on which the sunlight mainly irradiates in the stacked solar cell. The light-receiving surface is usually provided with a textured structure, that is, the substrate in the cell substrate 110 can be provided with a textured structure. The textured structure can increase the light absorption area, improve the photo-generated current, and help to improve the efficiency of the cell.

[0068] The cell substrate 110 is a bottom cell in the stacked solar cell 100a, and the first stacked structure 120a, the second stacked structure 130a, and the light absorption layer 140 constitute at least part of a top cell in the stacked solar cell 100a. In this way, the top cell with a wider band gap is deposited on the cell substrate 110 to form a stacked cell, which can maximize the use of solar energy, widen the spectral response, and improve the efficiency of the device.

[0069] For example, a composite layer (not shown in the figure) can be arranged between the cell substrate 110 and the aforementioned top cell. The composite layer can not only be used to modify the interface between the cell substrate 110 and the top cell, but also improve the passivation performance and interface contact performance of the cell substrate 110 affected by the preparation of the top cell. For example, the electrons and holes of the top cell can be recombined in the composite layer, so as to make the current of the cell substrate 110 and the current of the top cell consistent as much as possible. In addition, the composite layer has a certain longitudinal conductivity, which is conducive to the transmission of charges. For example, a conductive oxide film can be used as the composite layer. For example, the material of the composite layer can be one or a combination of at least two of ITO (Indium tin oxide), IWO (Tungsten-doped indium oxide), ICO (Cerium-doped indium oxide), IZO (Indium zinc oxide), AZO (Al-doped zinc oxide), GZO (Gallium-doped zinc oxide), SnO2, TiO2. The composite layer can be a single-layer structure or a multi-layer structure. The material of the single-layer structure can include a combination of one or more of the aforementioned materials, and the multi-layer structure can be a stacked structure such as an ITO layer and an IWO layer, which is not specifically limited here.

[0070] The first stacked structure 120a is a structure formed by stacking multiple functional layers. These multiple functional layers include a first conductive layer 121a and a first charge transport layer 122a. The second stacked structure 130a is a structure formed by stacking multiple functional layers. These multiple functional layers include an insulating barrier layer 131, a second conductive layer 132a, and a second charge transport layer 133a. Both the first charge transport layer 122a and the second charge transport layer 133a are in contact with the light-absorbing layer 140.

[0071] The first conductive layer 121a and the second conductive layer 132a are layer structures that are adapted to the corresponding charge transport layers to transport charges.

[0072] The first charge transport layer 122a and the second charge transport layer 133a can transport charge carriers. The light-absorbing layer 140 generates electron-hole pairs under sunlight. Both electrons and holes can be referred to as charge carriers. One of the first charge transport layer 122a and the second charge transport layer 133a is used to transport electrons, and the other is used to transport holes. For example, the first charge transport layer 122a is a hole transport layer, and the second charge transport layer 133a is an electron transport layer. Or, for another example, the first charge transport layer 122a is an electron transport layer, and the second charge transport layer 133a is a hole transport layer.

[0073] The insulating barrier layer 131 is a layer structure used to prevent both the second conductive layer 132a and the second charge transport layer 133a from contacting the first stacked structure 120a or the battery substrate 110.

[0074] For example, in conjunction with reference Figure 1 The first stacked structure 120a includes a first conductive layer 121a and a first charge transport layer 122a stacked on the first surface m1, and the first stacked structure 120a covers at least a portion of the first surface m1. The first stacked structure 120a and the battery substrate 110 constitute a combined structure. The second stacked structure 130a includes an insulating barrier layer 131, a second conductive layer 132a, and a second charge transport layer 133a stacked on the side of the combined structure opposite to the second surface m2. The orthographic projection of the first charge transport layer 122a onto the battery substrate 110 includes at least a region that does not overlap with the orthographic projection of the insulating barrier layer 131 onto the battery substrate 110. The orthographic projections of both the second conductive layer 132a and the second charge transport layer 133a onto the battery substrate 110 are located within the orthographic projection range of the insulating barrier layer 131 onto the battery substrate 110. A light-absorbing layer 140 is disposed on the side of the second stacked structure 130a opposite to the battery substrate 110. A portion of the light-absorbing layer 140 is in contact with the second charge transport layer 133a, and another portion of the light-absorbing layer 140 is in contact with the first charge transport layer 122a.

[0075] The first conductive layer 121a and the first charge transport layer 122a are laminated, i.e., at least part of the first charge transport layer 122a is disposed on the side of the first conductive layer 121a facing away from the battery substrate 110. The first laminated structure 120a covers at least part of the first surface m1, i.e., the first laminated structure 120a can cover the entire first surface m1 or can cover part of the first surface m1, which is not specifically limited herein.

[0076] In the case where the first laminated structure 120a covers the entire first surface m1, at least one of the first conductive layer 121a and the first charge transport layer 122a can be entirely laminated. For example, in the case where the first laminated structure 120a covers the entire first surface m1, the first conductive layer 121a and the first charge transport layer 122a can be entirely laminated. Figure 1 For example, in the case where the first laminated structure 120a covers the entire first surface m1, the first conductive layer 121a and the first charge transport layer 122a can be entirely laminated. Figure 2 For example, in the case where the first laminated structure 120a covers the entire first surface m1, the first conductive layer 121a and the first charge transport layer 122a can be entirely laminated. Figure 2 FIG. 1A is a schematic view of a cross-sectional structure of a first laminated structure 120a and a battery substrate 110 according to some embodiments of the present application, in which the first conductive layer 121a covers the first surface m1 and the first charge transport layer 122a covers at least part of the side of the first conductive layer 121a facing away from the battery substrate 110. For example, in the case where the first laminated structure 120a covers the entire first surface m1, the first conductive layer 121a and the first charge transport layer 122a can be entirely laminated. Figure 3 For example, in the case where the first laminated structure 120a covers the entire first surface m1, the first conductive layer 121a and the first charge transport layer 122a can be entirely laminated. Figure 3 FIG. 1B is a schematic view of a cross-sectional structure of a first laminated structure 120b and a battery substrate 110 according to other embodiments of the present application, in which the first conductive layer 121b covers part of the first surface m1 and the first charge transport layer 122b covers the side of the first conductive layer 121b facing away from the battery substrate 110 and part of the first surface m1 not covered by the first conductive layer 121b.

[0077] In the case where the first laminated structure covers part of the first surface m1, for example, in the case where the first laminated structure 120b covers part of the first surface m1, the first conductive layer 121b and the first charge transport layer 122b can be partially laminated. Figure 4 For example, in the case where the first laminated structure 120b covers part of the first surface m1, the first conductive layer 121b and the first charge transport layer 122b can be partially laminated. Figure 4 FIG. 1C is a schematic view of a cross-sectional structure of a first laminated structure 120c and a battery substrate 110 according to further embodiments of the present application, in which the first conductive layer 121b covers part of the first surface m1 and part of the first surface m1 not covered by the first conductive layer 121b is not covered by the first charge transport layer 122c. For example, in the case where the first laminated structure 120c covers part of the first surface m1, the first conductive layer 121b and the first charge transport layer 122c can be partially laminated. Figure 5 For example, in the case where the first laminated structure 120c covers part of the first surface m1, the first conductive layer 121b and the first charge transport layer 122c can be partially laminated. Figure 5 FIG. 1D is a schematic view of a cross-sectional structure of a first laminated structure 120d and a battery substrate 110 according to still further embodiments of the present application, in which part of the first surface m1 not covered by the first conductive layer 121b is partially covered by the first charge transport layer 122d. In the case where part of the first surface m1 not covered by the first conductive layer 121b is partially covered by the first charge transport layer 122d, the first charge transport layer 122d includes a portion in contact with the first conductive layer 121b and another portion in contact with the first surface m1.

[0078] Since the first stack structure covers at least part of the first surface m1, the side of the combined structure facing away from the second surface m2 includes the following cases: (1) the first stack structure covers part of the first surface m1, the side of the combined structure facing away from the second surface m2 includes the side of the first stack structure facing away from the first surface m1 and the part of the first surface m1 not covered by the first stack structure; (2) the first stack structure covers the whole of the first surface m1, the side of the combined structure facing away from the second surface m2 is the side of the first stack structure facing away from the first surface m1. The second stack structure is arranged on the side of the combined structure facing away from the second surface m2, that is, in case (1), the second stack structure is arranged on the side of the first stack structure facing away from the first surface m1 and the part of the first surface m1 not covered by the first stack structure; in case (2), the second stack structure is arranged on the side of the first stack structure facing away from the first surface m1. Figure 6 For example, Figure 6 is a schematic diagram of the cross-sectional structure of the first stack structure 120c, the second stack structure 130a and the battery substrate 110 in some embodiments of the present application, part of the second stack structure 130a is in contact with the side of the first stack structure 120c facing away from the first surface m1, and the other part of the second stack structure 130a is in contact with the part of the first surface m1 not covered by the first stack structure 120c; in case (2), for example, Figure 1 the second stack structure 130a is in contact with the side of the first stack structure 120c facing away from the first surface m1.

[0079] The orthographic projections of the second conductive layer and the second charge transport layer on the battery substrate 110 are located within the orthographic projection range of the insulating barrier layer 131 on the battery substrate 110, that is, the insulating barrier layer 131 blocks the second conductive layer and the second charge transport layer from contacting the first stack structure or the battery substrate 110.

[0080] For example, for example, Figure 7 For example, Figure 7 is a schematic diagram of the cross-sectional structure of the first stack structure 120a, the second stack structure 130b and the battery substrate 110 in some other embodiments of the present application, the second conductive layer 132b can cover the whole of the side of the insulating barrier layer 131 facing away from the battery substrate 110, and the second charge transport layer 133b can cover at least part of the side of the second conductive layer 132b facing away from the battery substrate 110. For another example, for example, Figure 1 the second conductive layer 132a can cover part of the side of the insulating barrier layer 131 facing away from the battery substrate, part of the second charge transport layer 133a can be in contact with the side of the second conductive layer 132a facing away from the battery substrate 110, and the other part of the second charge transport layer 133a can be in contact with the part of the side of the insulating barrier layer 131 facing away from the battery substrate not covered by the second conductive layer 132a.

[0081] For example, Figure 1For example, it is shown that the first conductive layer 121a covers the first surface m1, the first charge transport layer 122a covers the side of the first conductive layer 121a away from the battery base 110, the insulating barrier layer 131 is arranged on the side of the first charge transport layer 122a away from the battery base 110, the second conductive layer 132a covers the portion of the insulating barrier layer 131 on the side away from the battery base, a portion of the second charge transport layer 133a is in contact with the side of the second conductive layer 132a away from the battery base 110, and another portion of the second charge transport layer 133a is in contact with the portion of the insulating barrier layer 131 on the side away from the battery base which is not covered by the second conductive layer 132a.

[0082] The orthographic projection of the first charge transport layer on the battery base 110 at least includes the area not overlapping with the orthographic projection of the insulating barrier layer 131 on the battery base 110, that is, at least a portion of the first charge transport layer is not covered by the insulating barrier layer 131. The portion of the first charge transport layer not covered by the insulating barrier layer 131 is in contact with the light absorbing layer 140.

[0083] The light absorbing layer 140 is arranged on the side of the second stack structure away from the battery base 110, that is, the light absorbing layer 140 is at least in contact with the side of the second charge transport layer away from the battery base 110. According to the structure of the second stack structure, the portion of the light absorbing layer 140 in contact with the second stack structure can be the portion of the light absorbing layer 140 in contact with the second charge transport layer, or can include the portion of the light absorbing layer 140 in contact with the second charge transport layer and the portion of the light absorbing layer 140 in contact with the insulating barrier layer 131, which is not specifically limited herein.

[0084] Therefore, by arranging the first conductive layer, the first charge transport layer, the second conductive layer and the second charge transport layer on the side of the light-absorbing layer 140 facing the cell substrate 110, and by making a part of the light-absorbing layer 140 contact the first charge transport layer and another part of the light-absorbing layer 140 contact the second charge transport layer, the electron-hole pairs generated in the light-absorbing layer 140 under the irradiation of sunlight can be transported through the first charge transport layer and the second charge transport layer, respectively. In this process, since the sunlight can directly irradiate the light-absorbing layer 140 without passing through the first conductive layer, the first charge transport layer, the second conductive layer and the second charge transport layer, the light utilization rate can be improved, thereby generating more carriers and improving the carrier collection efficiency, which is conducive to improving the short-circuit current density, the fill factor and the conversion efficiency, and improving the performance of the cell. In addition, since the orthogonal projection of the first charge transport layer on the cell substrate 110 at least includes the area that does not overlap with the orthogonal projection of the insulating barrier layer 131 on the cell substrate 110, that is, the insulating barrier layer 131 is not entirely covered, and since the orthogonal projections of the second conductive layer and the second charge transport layer on the cell substrate 110 are located within the orthogonal projection range of the insulating barrier layer 131 on the cell substrate 110, that is, the second conductive layer and the second charge transport layer are not entirely covered, compared with the way of arranging the second conductive layer and the second charge transport layer entirely on the side of the light-absorbing layer 140 away from the cell substrate 110, the use of the second conductive layer material and the second charge transport layer material can be reduced, thereby reducing the manufacturing cost.

[0085] It should be noted that, in the stacked solar cell provided in the embodiments of the present application, taking the first charge transport layer as a hole transport layer and the second charge transport layer as an electron transport layer as an example, in combination with the above description of Figure 1 , the excited electrons of the light-absorbing layer 140 can not only move to the second charge transport layer 133a in the thickness direction H of the cell substrate 110, but also move to the second charge transport layer 133a in the first direction F1. The excited holes of the light-absorbing layer 140 can move to the first charge transport layer 122a in the thickness direction H of the cell substrate 110. In this way, the stacked solar cell in the embodiments of the present application makes the movement path of the carriers become a composite path of lateral movement combined with longitudinal movement, which is more conducive to improving the collection efficiency of the carriers than the single longitudinal movement path of the carriers in the related art, thereby further improving the performance of the cell.

[0086] According to some embodiments of the present application, please continue to refer to Figure 1 and Figure 6The overlapping area of the normal projection of the second conductive layer 132a and the light absorbing layer 140 on the battery substrate 110 is located within the range of the normal projection of the second charge transport layer 133a on the battery substrate 110. The area of the overlapping area of the normal projection of the second conductive layer 132a and the light absorbing layer 140 on the battery substrate 110 is less than the area of the normal projection of the second charge transport layer 133a on the battery substrate 110.

[0087] In this way, the use of the second conductive layer material is further reduced, and the manufacturing cost is further reduced.

[0088] According to some embodiments of the present application, please continue to refer to Figure 1 The normal projection of the second charge transport layer 133a on the battery substrate 110 overlaps with the normal projection of the insulating barrier layer 131 on the battery substrate 110.

[0089] In this way, the side surface of the insulating barrier layer 131 away from the battery substrate 110 can be further utilized to increase the coverage area of the second charge transport layer, thereby facilitating the improvement of the charge extraction efficiency.

[0090] According to some embodiments of the present application, please continue to refer to Figure 1 The area of the normal projection of the second conductive layer 132a on the battery substrate 110 is less than the area of the normal projection of the insulating barrier layer 131 on the battery substrate 110.

[0091] In this way, by controlling the coverage area of the second conductive layer, the use of the second conductive layer material can be reduced while facilitating the extraction of carriers, thereby not only facilitating the reduction of the absorption of light by the second conductive layer, but also reducing the manufacturing cost.

[0092] According to some embodiments of the present application, please continue to refer to Figure 1 The ratio of the area of the normal projection of the second conductive layer 132a on the battery substrate 110 to the area of the normal projection of the insulating barrier layer 131 on the battery substrate 110 is 0.4 to 0.8.

[0093] For example, the ratio of the area of the normal projection of the second conductive layer 132a on the battery substrate 110 to the area of the normal projection of the insulating barrier layer 131 on the battery substrate 110 is 0.4, 0.5, 0.6, 0.7, 0.75 or 0.8. The ratio of the area of the normal projection of the second conductive layer 132a on the battery substrate 110 to the area of the normal projection of the insulating barrier layer 131 on the battery substrate 110 can be any value within the range of 0.4 to 0.8, which is not limited herein.

[0094] Therefore, by controlling the ratio of the area of the second conductive layer on the battery substrate 110 in orthographic projection to the area of the insulating barrier layer 131 on the battery substrate 110 in orthographic projection, the coverage area of the second conductive layer can be controlled, which is conducive not only to the extraction of carriers but also to the improvement of the blocking effect of the insulating barrier layer 131 on electrons and holes and the reduction of the risk of current leakage at the edge of the second conductive layer.

[0095] According to some embodiments of the present application, please continue to refer to Figure 1 , the ratio of the area of the second conductive layer 132a on the battery substrate 110 in orthographic projection to the area of the first surface m1 is 0.2 to 0.5.

[0096] For example, the ratio of the area of the second conductive layer 132a on the battery substrate 110 in orthographic projection to the area of the first surface m1 is 0.2, 0.25, 0.3, 0.35, 0.4, 0.45 or 0.5. The ratio of the area of the second conductive layer 132a on the battery substrate 110 in orthographic projection to the area of the first surface m1 can be any value within the range of 0.2 to 0.5, which is not limited herein.

[0097] Therefore, by controlling the coverage area of the second conductive layer, the transmission effect of the second conductive layer on carriers can be improved while the excited electrons and holes after light absorption of the light absorption layer 140 can be more effectively extracted to the corresponding first charge transport layer and second charge transport layer.

[0098] According to some embodiments of the present application, please continue to refer to Figure 1 , and refer to Figure 8 , Figure 8 is a schematic view of the stack portion 1301 in some embodiments of the present application. The second stack structure 130a includes a plurality of stack portions 1301, and the plurality of stack portions 1301 are arranged at intervals along the first direction F1. The stack portion 1301 includes a first sub-layer 13011, a second sub-layer 13012 and a third sub-layer 13013 which are stacked on the first stack structure 120a. All the first sub-layers 13011 constitute the insulating barrier layer 131, all the second sub-layers 13012 constitute the second conductive layer 132a, and all the third sub-layers 13013 constitute the second charge transport layer 133a. The first direction F1 intersects with the thickness direction H of the battery substrate 110. In the embodiments of the present application, the first direction F1 is perpendicular to the thickness direction H of the battery substrate 110.

[0099] It should be noted that the structure of one stack portion 1301 is schematically shown in Figure 8 , and the structures of two stack portions 1301 are schematically shown in Figure 1 . Figure 8The structure of the stack part 1301 is shown. For ease of illustration, the number of stack parts 1301 can be three, four, ten, twenty or other numbers, which are not specifically limited here.

[0100] In this way, by setting the second stack structure 130a as a structure of multiple stack parts 1301 spaced apart along the first direction F1, the structure can be simpler and easier to manufacture while facilitating charge collection and transmission.

[0101] Of course, in some other embodiments, the structure of the stack part 1301 described above can not be used, which is not specifically limited here.

[0102] According to some embodiments of the present application, please continue to refer to Figure 1 , and in combination with referring to Figure 9 to Figure 11 , Figure 9 is a schematic view of the second stack structure 130a in the top view of some embodiments of the present application, Figure 10 is a schematic view of the cooperation of the second stack structure 130a and the light absorbing layer 140 in the top view of some embodiments of the present application, Figure 11 is a schematic view of the cooperation of the insulating barrier layer 131, the second conductive layer 132a and the light absorbing layer 140 in the top view of some embodiments of the present application, Figure 9 and Figure 10 The top view in Figure 1 is a view relative to Figure 10 and Figure 11 The position of the light absorbing layer 140 is schematically shown in a block. Figure 11 More Figure 10 The third sub-layer 13013 is not shown. The first sub-layer 13011, the second sub-layer 13012 and the third sub-layer 13013 all extend longitudinally along the second direction F2. The first direction F1, the second direction F2 and the thickness direction H of the battery substrate 110 are perpendicular to each other.

[0103] In this way, since the first sub-layer 13011, the second sub-layer 13012 and the third sub-layer 13013 all extend longitudinally along the second direction F2, the material can be reduced while facilitating manufacturing, thereby facilitating the reduction of manufacturing cost.

[0104] Of course, in some other embodiments, the first sub-layer, the second sub-layer and the third sub-layer can also not be longitudinally arranged along the second direction F2. For example, two ends of the first sub-layer are oppositely arranged along the second direction F2, and the first sub-layer is arranged in a curved manner from one end of the first sub-layer 13011 along the second direction F2 to the other end of the first sub-layer along the second direction F2. The shapes of the second sub-layer and the third sub-layer can also be considered in this way, and will not be described again. The structure formed by the extension of the first sub-layer, the second sub-layer and the third sub-layer is not specifically limited here.

[0105] According to some embodiments of the present application, please continue to refer to Figure 1 , Figure 8 , Figure 10 and Figure 11 , the outer contour of the orthographic projection of the second sub-layer 13012 on the battery substrate 110 has a spacing in the first direction F1 between the outer contour of the orthographic projection of the first sub-layer 13011 on the battery substrate 110.

[0106] In this way, by controlling the position of the second sub-layer 13012 relative to the third sub-layer 13013, it is not only beneficial to improve the blocking effect of the insulating barrier layer 131 on electrons and holes, but also beneficial to reduce the risk of edge leakage of the second conductive layer 132a.

[0107] Of course, in some other embodiments, the outer contour of the orthographic projection of the second conductive layer on the battery substrate 110 can also have a spacing between a part of the outer contour of the orthographic projection of the insulating barrier layer 131 on the battery substrate 110 and a part of the outer contour of the orthographic projection of the second conductive layer on the battery substrate 110, and no spacing between the other part, which is not specifically limited here.

[0108] According to some embodiments of the present application, please continue to refer to Figure 10 and Figure 11 , and in combination with referring to Figure 12 , Figure 12 is a schematic view of the insulating barrier layer 131, the second conductive layer 132a, the light-absorbing layer 140 and the metal electrode 150 in some embodiments of the present application in a top view, both the first sub-layer 13011 and the second sub-layer 13012 extend beyond the light-absorbing layer 140 along the second direction F2. The two ends of the second sub-layer 13012 extending beyond the light-absorbing layer 140 are connection ends p, and the laminated solar cell further comprises a metal electrode 150 connected to the connection ends p. The orthographic projection of the metal electrode 150 on the battery substrate 110 and the orthographic projection of the light-absorbing layer 140 on the battery substrate 110 do not overlap with each other.

[0109] For example, Figure 12 , the metal electrode 150 is arranged in a frame structure. The first surface m1 includes a middle region and an edge region arranged around the middle region. In combination with referring to Figure 10and 11 The metal electrode 150, the connecting end p, and the two ends of the first sub-layer 13011 along the second direction F2 are located in the edge region, and the light-absorbing layer 140 and the second charge transport layer 133a are located in the middle region. The anti-reflection layer 160 shown below is also located in the middle region. Of course, the metal electrode 150 can also have other structures, which are not specifically limited here.

[0110] For example, when the second charge transport layer 133a and the light-absorbing layer 140 are made, the size and position of both the second charge transport layer 133a and the light-absorbing layer 140 can be controlled by a mask plate, so that both the second charge transport layer 133a and the light-absorbing layer 140 are located in the middle region and do not block the second conductive layer 132a located in the edge region. Alternatively, after the second charge transport layer 133a and the light-absorbing layer 140 are made, the parts of both the second charge transport layer 133a and the light-absorbing layer 140 located in the edge region are removed. When the anti-reflection layer 160 is made, a mask plate can be used to limit the size and position of the anti-reflection layer 160.

[0111] For example, when the second charge transport layer 133a and the light-absorbing layer 140 are made, the size and position of both the second charge transport layer 133a and the light-absorbing layer 140 can be controlled by a mask plate, so that both the second charge transport layer 133a and the light-absorbing layer 140 are located in the middle region and do not block the second conductive layer 132a located in the edge region. Alternatively, after the second charge transport layer 133a and the light-absorbing layer 140 are made, the parts of both the second charge transport layer 133a and the light-absorbing layer 140 located in the edge region are removed. When the anti-reflection layer 160 is made, a mask plate can be used to limit the size and position of the anti-reflection layer 160. Figure 1 、 Figure 9 to Figure 12 For example, one pole of the stacked solar cell is led out from the second surface m2 side of the cell substrate 110, and the other pole of the stacked solar cell is led out through the metal electrode 150.

[0112] In this way, since the orthographic projection of the metal electrode 150 on the cell substrate 110 and the orthographic projection of the light-absorbing layer 140 on the cell substrate 110 do not overlap with each other, the light blocking of the metal electrode 150 to light in the light-receiving region of the cell can be reduced, and thus the light utilization rate and the short-circuit current can be improved. In addition, it is also convenient to test the stacked solar cell provided by the embodiments of the present application.

[0113] Of course, in some other embodiments, other leading methods can also be used to lead the charge of the stacked solar cell, which are not specifically limited here.

[0114] According to some embodiments of the present application, please continue to refer to Figure 10 to Figure 12 The second conductive layer 132a includes a plurality of conductive parts, and the plurality of conductive parts are arranged at intervals along the first direction F1, and the conductive parts are arranged longitudinally along the second direction F2. The first direction F1, the second direction F2, and the thickness direction H of the cell substrate 110 intersect each other in pairs.

[0115] For example, when the second charge transport layer 133a and the light-absorbing layer 140 are made, the size and position of both the second charge transport layer 133a and the light-absorbing layer 140 can be controlled by a mask plate, so that both the second charge transport layer 133a and the light-absorbing layer 140 are located in the middle region and do not block the second conductive layer 132a located in the edge region. Alternatively, after the second charge transport layer 133a and the light-absorbing layer 140 are made, the parts of both the second charge transport layer 133a and the light-absorbing layer 140 located in the edge region are removed. When the anti-reflection layer 160 is made, a mask plate can be used to limit the size and position of the anti-reflection layer 160. Figure 10 to Figure 12In the illustrated case, the conductive portion can be regarded as the second sub-layer 13012. In this case, the insulating barrier layer 131 can be implemented with reference to the first sub-layer 13011 or without reference to the first sub-layer 13011, and the second charge transport layer 133a can be implemented with reference to the third sub-layer 13013 or without reference to the third sub-layer 13013, and no specific limitation is made herein.

[0116] In this way, the material can be reduced while facilitating the fabrication, thereby facilitating the reduction of the fabrication cost.

[0117] According to some embodiments of the present application, please refer to Figure 13 , Figure 13 FIG. 6 is a schematic diagram of a cross-sectional structure of a stacked solar cell 100b according to some embodiments of the present application. The overlapping area of the normal projection of the insulating barrier layer 131 and the light-absorbing layer 140 on the cell substrate 110, the overlapping area of the normal projection of the second conductive layer 132b and the light-absorbing layer 140 on the cell substrate 110, and the normal projection of the second charge transport layer 133b on the cell substrate 110 overlap with each other.

[0118] For example, in combination with the foregoing embodiments, the first sub-layer 13011, the second sub-layer 13012, and the third sub-layer 13013 are aligned on one side along the first direction F1, and the first sub-layer 13011, the second sub-layer 13012, and the third sub-layer 13013 are aligned on the other side along the first direction F1.

[0119] In this way, not only is the fabrication facilitated, but more second conductive layers can also be provided within the range of the insulating barrier layer 131, so that the size of the second conductive layer is larger, thereby facilitating the reduction of the distance of the carrier transport from the second charge transport layer to the second conductive layer, and further improving the carrier transport efficiency, reducing the recombination, and improving the cell efficiency.

[0120] According to some embodiments of the present application, please refer to Figure 14 , Figure 14 FIG. 7 is a schematic diagram of a cross-sectional structure of a stacked solar cell 100c according to some embodiments of the present application. The overlapping area of the normal projection of the insulating barrier layer 131 and the light-absorbing layer 140 on the cell substrate 110, and the overlapping area of the normal projection of the second conductive layer 132b and the light-absorbing layer 140 on the cell substrate 110 overlap with each other. At least part of the outer contour of the normal projection of the second charge transport layer 133c on the cell substrate 110 is spaced apart from the outer contour of the normal projection of the insulating barrier layer 131 on the cell substrate 110. The area of the normal projection of the second charge transport layer 133c on the cell substrate 110 is smaller than the area of the normal projection of the insulating barrier layer 131 on the cell substrate 110. The insulating barrier layer 131, the second conductive layer 132b, and the second charge transport layer 133c constitute a second stacked structure 130c.

[0121] For example, in combination with the foregoing embodiments, the first sub-layer 13011 and the second sub-layer 13012 are both arranged in alignment along one side of the first direction F1, and the first sub-layer 13011 and the second sub-layer 13012 are both arranged in alignment along the other side of the first direction F1. The third sub-layer 13013 and the second sub-layer 13012 are both arranged in spacing along one side of the first direction F1, and the third sub-layer 13013 and the second sub-layer 13012 are both arranged in spacing along the other side of the first direction F1.

[0122] In this way, not only can the charge be transmitted through the second charge transport layer, but also the material of the second charge transport layer can be reduced, thereby reducing the manufacturing cost.

[0123] According to some embodiments of the present application, please refer to Figure 15 , Figure 15 For a cross-sectional structure schematic diagram of the stacked solar cell 100d in some other embodiments of the present application, at least part of the outer contour of the orthographic projection of the second charge transport layer 133d on the cell substrate 110 is arranged in spacing with the outer contour of the orthographic projection of the insulating barrier layer 131 on the cell substrate 110. The overlapping area of the orthographic projection of the second conductive layer 132a and the light absorbing layer 140 on the cell substrate 110 is within the orthographic projection range of the second charge transport layer 133d on the cell substrate 110. The overlapping area of the orthographic projection of the second conductive layer 132a and the light absorbing layer 140 on the cell substrate 110 is smaller than the orthographic projection area of the second charge transport layer 133d on the cell substrate 110. The insulating barrier layer 131, the second conductive layer 132a and the second charge transport layer 133d constitute the second stacked structure 130d.

[0124] For example, in combination with the foregoing embodiments, the third sub-layer 13013 and the second sub-layer 13012 are both arranged in spacing along one side of the first direction F1, and the third sub-layer 13013 and the second sub-layer 13012 are both arranged in spacing along the other side of the first direction F1.

[0125] In this way, by controlling the coverage area of the second conductive layer and the second charge transport layer, the area of the second charge transport layer can be reduced, and the material of the second charge transport layer can be saved.

[0126] According to some embodiments of the present application, please refer to Figure 16 , Figure 16 For a cross-sectional structure schematic diagram of the stacked solar cell 100e in some other embodiments of the present application, the orthographic projection of the first charge transport layer 122e on the cell substrate 110 does not overlap with the orthographic projection of the second stacked structure 130a on the cell substrate 110. The first charge transport layer 122e and the first conductive layer 121a constitute the first stacked structure 120e.

[0127] Thus, the coverage area of the first charge transport layer 122e can be reduced, and the charge extraction efficiency can be improved while saving the material of the first charge transport layer 122e.

[0128] It should be noted that, Figure 16 the second stack structure 130a shown in Figure 1 . In the case where the orthographic projection of the first charge transport layer on the cell substrate 110 and the orthographic projection of the second stack structure on the cell substrate 110 do not overlap with each other, a structure as shown in Figure 17 may also be formed. In this case, Figure 17 is a cross-sectional structure diagram of a stack solar cell 100f in some other embodiments of the present application, and the second stack structure 130d shown in Figure 15 is adopted. In addition, in the case where the orthographic projection of the first charge transport layer on the cell substrate 110 and the orthographic projection of the second stack structure on the cell substrate 110 do not overlap with each other, a structure as shown in Figure 18 may also be formed, Figure 18 is a cross-sectional structure diagram of a stack solar cell 100g in yet some other embodiments of the present application, and the orthographic projection of the first conductive layer 121b on the cell substrate 110 and the orthographic projection of the second stack structure 130a on the cell substrate 110 do not overlap with each other. That is, the first stack structure formed by the first conductive layer and the first charge transport layer can be controlled according to the above-mentioned Figure 4 and Figure 5 embodiments, which will not be described herein again.

[0129] It can be understood that the various embodiments of the first stack structure and the second stack structure shown above can be combined with each other, and no specific limitation is made herein.

[0130] According to some embodiments of the present application, please continue to refer to Figure 1 , Figure 13 to Figure 15 , the orthographic projection of the first charge transport layer 122a on the cell substrate 110 and the orthographic projection of the first conductive layer 121a on the cell substrate 110 overlap with each other; or, please continue to refer to Figure 16 and Figure 17 , the orthographic projection of the first charge transport layer 122e and the orthographic projection of the first conductive layer 121a on the cell substrate 110 have overlapping and non-overlapping regions.

[0131] Thus, in the case that the orthographic projection of the first charge transport layer on the battery substrate 110 and the orthographic projection of the first conductive layer on the battery substrate 110 overlap with each other, it is beneficial to transmit the electric charges from the first charge transport layer to the first conductive layer more quickly. In the case that the orthographic projections of both the first charge transport layer and the first conductive layer on the battery substrate 110 have overlapping regions and non-overlapping regions, it is beneficial to reduce the material usage of the first charge transport layer while transmitting the electric charges by using the first charge transport layer and reducing the light absorption of the first charge transport layer, thereby reducing the manufacturing cost.

[0132] It should be noted that the related embodiments of the first charge transport layer and the first conductive layer can also be understood in combination with the foregoing embodiments Figure 2 to Figure 5 which will not be repeated here.

[0133] According to some embodiments of the present application, please refer to Figure 19 , Figure 19 for the structural schematic diagram of the first conductive layer 121c in some embodiments of the present application, Figure 19 the viewing angle shown is Figure 1 the top-down viewing angle of the viewing angle shown, the first conductive layer 121c has a plurality of hollow parts k which are independent of each other.

[0134] Thus, while having certain electric charge transmission effect, the material of the first conductive layer can be reduced, thereby also being beneficial to reduce the manufacturing cost.

[0135] According to some embodiments of the present application, please continue to refer to Figure 19 , the first conductive layer 121c includes a plurality of conductive units 1211 and a connection unit 1212 connecting the plurality of conductive units 1211, and the conductive units 1211 and the connection unit 1212 define the hollow parts k. The first charge transport layer is at least in contact with the plurality of conductive units 1211.

[0136] Thus, it is further beneficial to manufacture the first conductive layer.

[0137] According to some embodiments of the present application, please continue to refer to Figure 19 , the ratio of the orthographic projection area of the plurality of conductive units 1211 on the battery substrate 110 to the orthographic projection area of the first charge transport layer on the battery substrate 110 is 0.8 to 1.2; and / or, the plurality of conductive units 1211 are arranged in a rectangular array, and two adjacent conductive units 1211 are connected by means of a connection unit 1212.

[0138] For example, the ratio of the area of the orthographic projection of the plurality of conductive units 1211 on the battery substrate 110 to the area of the orthographic projection of the first charge transport layer on the battery substrate 110 is 0.8 to 1.2. For example, the ratio of the area of the orthographic projection of all the conductive units 1211 on the battery substrate 110 to the area of the orthographic projection of the first charge transport layer on the battery substrate 110 is 0.8, 0.85, 0.9, 0.95, 1, 1.1, or 1.2. The ratio of the area of the orthographic projection of all the conductive units 1211 on the battery substrate 110 to the area of the orthographic projection of the first charge transport layer on the battery substrate 110 can be any value within the range of 0.8 to 1.2.

[0139] For example, the plurality of conductive units 1211 are arranged in rows along the first direction F1 and in columns along the second direction F2.

[0140] In this way, by controlling the ratio of the area of the orthographic projection of the plurality of conductive units 1211 on the battery substrate 110 to the area of the orthographic projection of the first charge transport layer on the battery substrate 110, the charge transport effect can be improved while facilitating manufacturing. By arranging the plurality of conductive units 1211 in a rectangular array and connecting two adjacent conductive units 1211 by means of a connecting unit 1212, the structure of the first conductive layer 121c is more convenient.

[0141] According to some embodiments of the present application, please continue to refer to Figure 1 , the first conductive layer 121a is a transparent conductive layer; and / or, the second conductive layer 132a is a transparent conductive layer.

[0142] For example, the material of the transparent conductive layer includes any one or a combination of indium tin oxide (ITO), indium tungsten oxide (IWO), indium zinc oxide (IZO), indium cerium oxide (ICO), indium hafnium oxide (IHfO), indium zirconium oxide (IZrO), indium molybdenum oxide (IMO), and indium oxide (IHO). No specific limitation is made herein.

[0143] In this way, by setting the first conductive layer and / or the second conductive layer as a transparent conductive layer, the light utilization rate can be improved.

[0144] Of course, the first conductive layer and / or the second conductive layer in some other embodiments described above can also be a transparent conductive layer, which will not be described here.

[0145] According to some embodiments of the present application, please continue to refer to Figure 1 , the ratio of the area of the orthographic projection of the insulating barrier layer 131 on the battery substrate 110 to the area of the first surface m1 is 0.4 to 0.6.

[0146] For example, the ratio of the area of the insulating barrier layer 131 on the battery substrate 110 to the area of the first surface m1 is 0.4, 0.45, 0.5, 0.55, 0.58, or 0.6. The ratio of the area of the insulating barrier layer 131 on the battery substrate 110 to the area of the first surface m1 can be any value in the range of 0.4 to 0.6, which is not limited herein.

[0147] In this way, by controlling the area ratio of the insulating barrier layer 131, the interface degree of the first charge transport layer and the second charge transport layer can be considered, and the transmission of electrons and holes to the corresponding charge transport layer is facilitated. At the same time, the coverage area of the second conductive layer and the coverage area of the second charge transport layer can also be considered, so as to not only facilitate the improvement of the charge transport effect of the second charge transport layer and the reduction of the risk of edge leakage due to alignment problems in the manufacturing process, but also facilitate the reduction of the manufacturing cost of the second charge transport layer and the second conductive layer.

[0148] According to some embodiments of the present application, please continue to refer to Figure 1 The material of the insulating barrier layer 131 includes metal oxide or silicon oxide.

[0149] For example, the metal oxide includes magnesium oxide (MgO), aluminum oxide (Al2O3), and calcium oxide (CaO). The silicon oxide includes silicon oxide SiO x , which is not limited herein.

[0150] Of course, the material of the insulating barrier layer 131 and the area ratio of the insulating barrier layer 131 in some other embodiments described above can also refer to the above embodiments, which will not be described herein.

[0151] According to some embodiments of the present application, please continue to refer to Figure 1 , Figure 13 to Figure 18 The laminated solar cell further includes an anti-reflection layer 160 disposed on the side of the light-absorbing layer 140 away from the battery substrate 110.

[0152] For example, the material of the anti-reflection layer 160 includes any one or a combination of fluoride (such as magnesium fluoride (MgF2), lithium fluoride (LiF)), high-molecular polymer (such as polydimethylsiloxane (PDMS)), and silicon compound (such as silicon nitride (Si3N4), silicon oxynitride (SiN x O y ), which is not limited herein.

[0153] In this way, by providing the anti-reflection layer 160 on the light-absorbing layer 140, not only can the reflection of light be reduced, but also the aging of the battery due to external environment can be delayed.

[0154] According to some embodiments of the present application, please continue to refer to Figure 1 , Figure 13 to Figure 18 , the battery substrate 110 is a crystalline silicon battery, and the light absorption layer 140 is a perovskite layer.

[0155] For example, the battery substrate 110 can be a crystalline silicon battery, which can be a HJT (Heterojunction with Intrinsic Thin-layer) battery, a TOPCon (Tunnel Oxide Passivating Contacts) battery, a PERC (Passivated Emitter and Rear Cell) battery, or a BC (Back Contact) battery.

[0156] For example, the light absorption layer 140 can be a perovskite layer. The chemical formula of perovskite in the light absorption layer 140 is ABX3. Wherein, A includes organic cations, inorganic cations or organic-inorganic mixed cations, B includes organic cations, inorganic cations or organic-inorganic mixed cations, and X includes organic anions, inorganic anions or organic-inorganic mixed anions. A can include any one or a combination of at least two of FA + , MA + , Cs + or Rb + , B can include any one or a combination of at least two of Pb 2+ , Sn 2+ or Sr 2+ , and X can include any one or a combination of at least two of Br - , I - or CI - . The perovskite layer (i.e. the light absorption layer 140) can be prepared by selecting perovskite materials with corresponding ions according to actual needs, which is not specifically limited here.

[0157] According to some embodiments of the present application, please continue to refer to Figure 1 , the first charge transport layer 122a is a hole transport layer, and the material of the hole transport layer includes a self-assembled monolayer (SAM) material (such as 2-[(2-chlorophenyl) (phenyl) amino] ethyl benzoate (2PACz)), a metal oxide (such as nickel oxide (NiO x )) or an organic hole transport material (such as polytriazole (PTAA)). The second charge transport layer 133a is an electron transport layer, and the material of the electron transport layer includes fullerene and its derivatives (such as C 60 , PC61BM, etc.), tin oxide (SnO xat least one of the following: Li, Na, K, Rb, Cs, Mg, Ca, Sr, Ba, H, F, CI, Br, I, Ge, Sn, Pb, As, Sb, Bi, and Se. No specific limitation is made herein.

[0158] According to some embodiments of the present application, please continue to refer to Figure 1 The thickness of the first conductive layer 121a is 5nm to 50nm.

[0159] For example, the thickness of the first conductive layer 121a is 5nm, 15nm, 20nm, 25nm, 30nm, 35nm, 45nm or 50nm. The thickness of the first conductive layer 121a can be any value within the range of 5nm to 50nm, no specific limitation is made herein.

[0160] In this way, by controlling the thickness of the first conductive layer, the material can be reduced while having certain conductive properties.

[0161] According to some embodiments of the present application, please continue to refer to Figure 1 The thickness of the first charge transport layer 122a is 10nm to 50nm.

[0162] For example, the thickness of the first charge transport layer 122a is 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm or 50nm. The thickness of the first charge transport layer 122a can be any value within the range of 10nm to 50nm, no specific limitation is made herein.

[0163] In this way, by controlling the thickness of the first charge transport layer, the recombination loss can be reduced while having certain charge transport efficiency.

[0164] According to some embodiments of the present application, please continue to refer to Figure 1 The thickness of the insulating barrier layer 131 is 30nm to 100nm.

[0165] For example, the thickness of the insulating barrier layer 131 is 30nm, 35nm, 40nm, 45nm, 50nm, 60nm, 70nm, 80nm, 90nm or 100nm. The thickness of the insulating barrier layer 131 can be any value within the range of 30nm to 100nm, no specific limitation is made herein.

[0166] In this way, by controlling the thickness of the insulating barrier layer 131, the material can be reduced while having certain insulating barrier properties.

[0167] According to some embodiments of the present application, please continue to refer to Figure 1 The thickness of the second conductive layer 132a is 10nm to 100nm.

[0168] Exemplarily, the thickness of the second conductive layer 132a is 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, or 100 nm. The thickness of the second conductive layer 132a can be any value in the range of 10 nm to 100 nm, which is not specifically limited herein.

[0169] In this way, by controlling the thickness of the second conductive layer, the material usage can be reduced while maintaining certain conductive performance.

[0170] According to some embodiments of the present application, please continue to refer to Figure 1 The thickness of the second charge transport layer 133a is 10 nm to 50 nm.

[0171] Exemplarily, the thickness of the second charge transport layer 133a is 10 nm, 10 nm, 10 nm, 10 nm, 10 nm, 10 nm, or 50 nm. The thickness of the second charge transport layer 133a can be any value in the range of 10 nm to 50 nm, which is not specifically limited herein.

[0172] In this way, by controlling the thickness of the second charge transport layer, the recombination loss can be reduced while maintaining certain charge transport efficiency.

[0173] According to some embodiments of the present application, please continue to refer to Figure 1 The thickness of the light absorption layer 140 is 100 nm to 1500 nm.

[0174] Exemplarily, the thickness of the light absorption layer 140 is 100 nm, 200 nm, 300 nm, 500 nm, 700 nm, 900 nm, 1100 nm, 1200 nm, 1300 nm, or 1500 nm. The thickness of the light absorption layer 140 can be any value in the range of 100 nm to 1500 nm, which is not specifically limited herein.

[0175] In the embodiments of the present application, since the first stack structure and the second stack structure are arranged on one side of the light absorption layer 140, compared with the light absorption layer in the related art, the transmission distance of the excited carriers of the light absorption layer 140 to the corresponding charge transport layer is shortened. Therefore, the thickness of the light absorption layer 140 in the embodiments of the present application can be thicker than that of the light absorption layer in the related art. For example, the thickness difference can be about 1 μm. In this way, the light absorption layer 140 in the embodiments of the present application not only helps to improve the total amount of light absorption and increase the total number of carriers, but also helps to improve the carrier separation efficiency and reduce the interface recombination loss.

[0176] According to some embodiments of the present application, please continue to refer to Figure 1 The thickness of the anti-reflection layer 160 is 50 nm to 500 nm.

[0177] For example, the thickness of the antireflection layer 160 is 50 nm, 100 nm, 150 nm, 200 nm, 350 nm, 400 nm, 450 nm or 500 nm. The thickness of the antireflection layer 160 can be any value in the range of 50 nm to 500 nm, which is not specifically limited herein.

[0178] In this way, by controlling the thickness of the antireflection layer 160, the stability of the antireflection layer 160 can be improved while having certain antireflection effect.

[0179] It should be noted that the thickness of each film layer in the stacked solar cell shown in some of the above embodiments can also be controlled, which is not specifically limited herein.

[0180] According to some embodiments of the present application, please refer to Figure 20 , Figure 20 The flowchart of the manufacturing method of the stacked solar cell in some embodiments of the present application, the embodiment of the present application provides a manufacturing method of a stacked solar cell, the manufacturing method of the stacked solar cell is used to manufacture the stacked solar cell in any one of the above embodiments, the manufacturing method of the stacked solar cell comprises the following steps:

[0181] Step S110, providing a cell substrate;

[0182] Step S120, stacking a first stacked structure on the first surface of the cell substrate; the first stacked structure and the cell substrate constitute a combined structure;

[0183] Step S130, providing a second stacked structure on the side of the combined structure away from the second surface of the cell substrate;

[0184] Step S140, providing a light absorbing layer on the side of the second stacked structure away from the cell substrate to obtain a stacked solar cell.

[0185] The advantages of the stacked solar cell in any one of the above embodiments are also possessed by the stacked solar cell obtained by the manufacturing method of the stacked solar cell, which is not described again herein.

[0186] According to some embodiments of the present application, the first conductive layer has a projection area on the cell substrate smaller than the area of the first surface, and the first conductive layer is formed by a mask process or a photolithography process; and / or, the first charge transport layer has a projection area on the cell substrate smaller than the area of the first surface, and the first charge transport layer is formed by a mask process or a photolithography process.

[0187] Thus, the structure of the first conductive layer and the first charge transport layer as shown in some of the foregoing embodiments can be formed. By using the mask process or the photolithography process, not only is the fabrication facilitated, but the fabrication precision is also improved, thereby facilitating the extraction of the holes and the electrons from the light absorbing layer and the transport of the holes and the electrons to the corresponding conductive layer, respectively.

[0188] According to some embodiments of the present application, reference can be made to Figure 21 , Figure 21 A flowchart of step S130 in some embodiments of the present application is shown in FIG. 6, in which a second stack structure is arranged on the side of the combined structure away from the second surface of the battery substrate (i.e., step S130), including:

[0189] Step S131, forming an insulating barrier layer on the side of the combined structure away from the second surface of the battery substrate by using a mask process or a photolithography process;

[0190] Step S132, forming a second conductive layer on the side of the insulating barrier layer away from the battery substrate by using a mask process or a photolithography process;

[0191] Step S133, forming a second charge transport layer on the side of the second conductive layer away from the battery substrate by using a mask process or a photolithography process.

[0192] Thus, the structure of the insulating barrier layer, the second conductive layer and the second charge transport layer as shown in some of the foregoing embodiments can be formed. By using the mask process or the photolithography process, not only is the fabrication facilitated, but the fabrication precision is also improved, thereby facilitating the extraction of the holes and the electrons from the light absorbing layer and the transport of the holes and the electrons to the corresponding conductive layer, respectively.

[0193] The manufacturing method of the stacked solar cell provided by the embodiments of the present application will be described exemplarily in combination with the cases shown in some of the foregoing embodiments, but is not limited thereto.

[0194] Exemplarily, referring to Figure 1 the manufacturing method of the stacked solar cell 100a provided by the embodiments of the present application includes the following steps:

[0195] S1, providing a battery substrate 110;

[0196] S2, forming a first conductive layer 121a on a first surface m1 of the battery substrate 110 by using a magnetron sputtering process or an evaporation process;

[0197] S3, forming a hole transport layer (i.e., a first charge transport layer 122a) on the side of the first conductive layer 121a away from the battery substrate 110 by using a solution spin coating process, an evaporation process, a magnetron sputtering process or an atomic layer deposition process;

[0198] S4, forming an insulating barrier layer 131 on one side of the hole transport layer by using a mask and through a vapor deposition process, a magnetron sputtering process or an atomic layer deposition process;

[0199] S5, forming a second conductive layer 132a on the side of the insulating barrier layer 131 away from the cell substrate 110 by using a mask and through a magnetron sputtering process or a vapor deposition process;

[0200] S6, forming an electron transport layer (i.e., a second charge transport layer 133a) on the side of the second conductive layer 132a away from the cell substrate 110 by using a mask and through a solution spin coating process, a vapor deposition process, a magnetron sputtering process or an atomic layer deposition process;

[0201] S7, forming a perovskite layer (i.e., a light absorbing layer 140) by a wet preparation process (e.g., anti-solvent spin coating, doctor blading, slot-die coating, etc.), a dry preparation process (e.g., simultaneous vapor deposition of each raw material of perovskite in one vapor deposition equipment) or a dry-wet hybrid preparation process (e.g., solution growth of organic amine after vapor deposition of PbI2skeleton);

[0202] S8, forming an anti-reflective layer 160 on the side of the light absorbing layer 140 away from the cell substrate 110 by a vapor deposition process, a magnetron sputtering process, a plasma enhanced chemical vapor deposition process or a low pressure chemical vapor deposition process, or forming the anti-reflective layer 160 on the side of the light absorbing layer 140 away from the cell substrate 110 by pasting the anti-reflective layer 160.

[0203] It is to be noted that, when forming, for example, Figure 16 the stack solar cell 100e as shown in FIG. 1E, the first charge transport layer 122e can be formed in step S3 above by a mask process or a photolithography process. When it is required to make, for example, Figure 12 the metal electrode 150 as shown in FIG. 1G, it can be considered in combination with the cases shown in some of the foregoing embodiments, which will not be repeated here. In addition, when different first stack structures or different second stack structures are involved, they can also be made in combination with a mask process or a photolithography process, which will not be repeated here.

[0204] According to another aspect of the present application, the embodiments of the present application provide a solar cell. The solar cell comprises a substrate, a first stack structure, a second stack structure, and a light absorption layer. The substrate has a first surface and a second surface oppositely arranged along a thickness direction of the substrate. The first stack structure comprises a first conductive layer and a first charge transport layer stacked on the first surface. The first stack structure covers at least part of the first surface, and the first stack structure and the substrate form a combined structure. The second stack structure comprises an insulating barrier layer, a second conductive layer, and a second charge transport layer stacked on a side of the combined structure away from the second surface. A projection of the first charge transport layer on the substrate covers at least an area not overlapping with a projection of the insulating barrier layer on the substrate. Projections of the second conductive layer and the second charge transport layer on the substrate are both within a range of the projection of the insulating barrier layer on the substrate. The light absorption layer is arranged on a side of the second stack structure away from the substrate. A part of the light absorption layer is in contact with the second charge transport layer, and another part of the light absorption layer is in contact with the first charge transport layer.

[0205] For example, the light absorption layer is a perovskite layer, and the solar cell is a perovskite solar cell.

[0206] The solar cell comprises the first stack structure, the second stack structure, and the light absorption layer, which are the same as the first stack structure, the second stack structure, and the light absorption layer 140 of the stack solar cell illustrated in some of the foregoing embodiments. Therefore, the solar cell has the same advantages as the stack solar cell. The first stack structure, the second stack structure, and the light absorption layer of the solar cell can be manufactured by referring to the manufacturing method of the first stack structure, the second stack structure, and the light absorption layer 140 of the stack solar cell illustrated in some of the foregoing embodiments, which will not be described herein again.

[0207] It should be noted that the solar cell provided by the embodiments of the present application is different from the stack solar cell illustrated in some of the foregoing embodiments in that the substrate is used in the solar cell, and the substrate can be a glass substrate, while the cell substrate 110 is used in the stack solar cell. The related embodiments of the first stack structure, the second stack structure, and the light absorption layer can be referred to the cases illustrated in some of the foregoing embodiments, which will not be described herein again. In addition, the layer structures such as the anti-reflection layer 160 and the metal electrode 150 illustrated in some of the foregoing embodiments can also be implemented. The metal electrode 150 can be arranged according to different types of cells, as long as the circuit connection between the cell and the external structure can be achieved, which will not be specifically limited herein.

[0208] The first stack structure, the second stack structure and the light absorption layer 140 provided in the embodiments of the present application can be applied to a single-junction perovskite solar cell, and can also be applied to a top cell part of a stacked solar cell. The stacked solar cell can be a two-terminal perovskite / crystalline silicon stacked cell, a three-terminal perovskite / BC stacked cell, a four-terminal perovskite / crystalline silicon stacked cell, a two-terminal perovskite / perovskite stacked cell, a three-terminal perovskite / perovskite stacked cell or a four-terminal perovskite / perovskite stacked cell. The top cell part can be a forward structure or a reverse structure. That is, the first charge transport layer can be a hole transport layer and the second charge transport layer can be an electron transport layer, or the first charge transport layer can be an electron transport layer and the second charge transport layer can be a hole transport layer.

[0209] Thus, by means of the first stack structure, the second stack structure and the light absorption layer 140 shown in some embodiments described above, on the one hand, sunlight is first irradiated onto the light absorption layer 140 and then irradiated onto the second charge transport layer and the second conductive layer, which can reduce the parasitic absorption of light by the second charge transport layer and the second conductive layer, so that more light is absorbed by the light absorption layer 140, thereby facilitating the improvement of the current density. On the other hand, since the second charge transport layer and the second conductive layer are not provided on the entire surface, more light can be irradiated onto the cell substrate 110, thereby increasing the absorption of light by the cell substrate 110 and further increasing the current of the stacked cell. On the other hand, by using a textured substrate in the cell substrate 110 or by providing a structure similar to a textured structure on the substrate, the first stack structure, the second stack structure and the light absorption layer 140 can have a concave-convex structure, thereby facilitating the reduction of light reflection and the enhancement of light absorption. On the other hand, by providing the anti-reflection layer 160, the light reflection can be further reduced and the light absorption can be further enhanced. In addition, by controlling the coverage area of each layer structure, the shape and position of each layer structure in the first stack structure and the second stack structure, the performance of the cell can be improved while the manufacturing cost is reduced. Therefore, by means of the cooperation of various layer structures, the light absorption is improved, the performance of the cell is improved, and the manufacturing cost is reduced.

[0210] According to another aspect of the present application, please refer to Figure 22 , Figure 22For a structural schematic diagram of the photovoltaic module 10 in some embodiments of the present application, the embodiments of the present application provide a photovoltaic module 10, which comprises a cell string 11, an encapsulation layer 12 and a cover plate 13. The encapsulation layer 12 is used to cover the surface of the cell string 11. The cover plate 13 is used to cover the surface of the encapsulation layer 12 away from the cell string 11. Wherein, the cell string 11 is connected by a plurality of the laminated solar cells in any one of the above embodiments; or, the cell string 11 is connected by a plurality of the laminated solar cells made by the manufacturing method of the laminated solar cells in any one of the above embodiments.

[0211] In some embodiments, the plurality of cell strings 11 can be electrically connected through a conductive band 14. The encapsulation layer 12 covers the front surface and the back surface of the laminated solar cell.

[0212] In some embodiments, the encapsulation layer 12 can be an organic encapsulation film such as an ethylene-vinyl acetate copolymer (EVA) film, a polyethylene octene copolymer elastomer (POE) film or a polyethylene terephthalate (PET) film.

[0213] In some embodiments, the cover plate 13 can be a glass cover plate, a plastic cover plate or the like cover plate with light transmission function.

[0214] In some embodiments, the surface of the cover plate 13 facing the encapsulation layer 12 can be a concave-convex surface, thereby increasing the utilization rate of incident light.

[0215] The above laminated solar cell has the advantages, and the photovoltaic module 10 also has the advantages, which will not be described here.

[0216] Of course, according to another aspect of the present application, the cell string in the photovoltaic module is connected by the solar cell in any one of the above embodiments. No specific limitation is made here.

[0217] The technical features of the above embodiments can be combined arbitrarily. In order to make the description simple, all possible combinations of the technical features in the above embodiments are not described, however, as long as the combinations of the technical features do not exist contradictory, they should be considered as the scope of the present application.

[0218] The above embodiments only express several implementation manners of the present application, the description is more specific and detailed, but it should not be understood as the limitation of the patent application scope. It should be pointed out that for ordinary skilled in the art, without departing from the concept of the present application, a number of modifications and improvements can be made, which all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application should be subject to the appended claims.

Claims

1. A stacked solar cell, characterized by, The stacked solar cell comprises: a cell substrate having a first surface and a second surface oppositely arranged along a thickness direction of the cell substrate; a first stacked structure comprising a first conductive layer and a first charge transport layer stacked on the first surface, the first stacked structure covering at least part of the first surface, the first stacked structure and the cell substrate forming a combined structure; a second stacked structure comprising an insulating barrier layer, a second conductive layer and a second charge transport layer stacked on a side of the combined structure facing away from the second surface; a projection of the first charge transport layer on the cell substrate at least comprises an area not overlapping with a projection of the insulating barrier layer on the cell substrate, projections of the second conductive layer and the second charge transport layer on the cell substrate both being located within a projection range of the insulating barrier layer on the cell substrate; and a light absorbing layer arranged on a side of the second stacked structure facing away from the cell substrate, a part of the light absorbing layer being in contact with the second charge transport layer, and another part of the light absorbing layer being in contact with the first charge transport layer. The first conductive layer has a plurality of mutually independent hollow parts; the first conductive layer comprises a plurality of conductive units and a connecting unit connecting the plurality of conductive units, the conductive units and the connecting unit defining the hollow parts; and the first charge transport layer is in contact with at least the plurality of conductive units.

2. The tandem solar cell according to claim 1, characterized in that, An overlapping area of the projections of the second conductive layer and the light absorbing layer on the cell substrate is located within a projection range of the second charge transport layer on the cell substrate. An area of the overlapping area of the projections of the second conductive layer and the light absorbing layer on the cell substrate is smaller than an area of the projection of the second charge transport layer on the cell substrate.

3. The tandem solar cell according to claim 1, characterized by The projection of the second charge transport layer on the cell substrate overlaps with overlapping projections of the insulating barrier layer and the light absorbing layer on the cell substrate.

4. The tandem solar cell according to any one of claims 1 to 3, characterized in that, An area of the projection of the second conductive layer on the cell substrate is smaller than an area of the projection of the insulating barrier layer on the cell substrate.

5. The tandem solar cell according to claim 4, characterized in that, A ratio of the area of the projection of the second conductive layer on the cell substrate to the area of the projection of the insulating barrier layer on the cell substrate is 0.4 to 0.

8.

6. The tandem solar cell according to any one of claims 1 to 3, wherein A ratio of the area of the projection of the second conductive layer on the cell substrate to an area of the first surface is 0.2 to 0.

5.

7. The tandem solar cell according to any one of claims 1 to 3, wherein The second stacked structure comprises a plurality of stacked parts arranged at intervals along a first direction; The stacked parts comprise first sub-layers, second sub-layers and third sub-layers stacked on the first stacked structure, all the first sub-layers forming the insulating barrier layer, all the second sub-layers forming the second conductive layer, and all the third sub-layers forming the second charge transport layer; The first direction and the thickness direction of the cell substrate intersect with each other.

8. The tandem solar cell according to claim 7, characterized in that The first sub-layers, the second sub-layers and the third sub-layers all longitudinally extend along a second direction. The first direction, the second direction and the thickness direction of the battery substrate intersect with each other.

9. The tandem solar cell according to any one of claims 1 to 3, wherein The second conductive layer comprises a plurality of conductive units, the plurality of conductive units are arranged in a first direction, and the conductive units are arranged in a second direction. The first direction, the second direction and the thickness direction of the battery substrate intersect with each other.

10. The tandem solar cell according to any one of claims 1 to 3, wherein The first charge transport layer and the second charge transport layer are arranged in a first direction, and the first charge transport layer and the second charge transport layer are arranged in a second direction.

11. The tandem solar cell according to any one of claims 1 to 3, wherein The first charge transport layer and the first conductive layer are arranged in a first direction, and the first charge transport layer and the first conductive layer are arranged in a second direction. The first charge transport layer and the first conductive layer are arranged in a first direction, and the first charge transport layer and the first conductive layer are arranged in a second direction.

12. The tandem solar cell according to any one of claims 1 to 3, wherein The first charge transport layer and the first conductive layer are arranged in a first direction, and the first charge transport layer and the first conductive layer are arranged in a second direction. The first charge transport layer and the first conductive layer are arranged in a first direction, and the first charge transport layer and the first conductive layer are arranged in a second direction.

13. The tandem solar cell according to any one of claims 1 to 3, wherein The first charge transport layer and the first conductive layer are arranged in a first direction, and the first charge transport layer and the first conductive layer are arranged in a second direction.

14. A photovoltaic module, characterized by, The first charge transport layer and the first conductive layer are arranged in a first direction, and the first charge transport layer and the first conductive layer are arranged in a second direction. The first charge transport layer and the first conductive layer are arranged in a first direction, and the first charge transport layer and the first conductive layer are arranged in a second direction. The first charge transport layer and the first conductive layer are arranged in a first direction, and the first charge transport layer and the first conductive layer are arranged in a second direction. The first charge transport layer and the first conductive layer are arranged in a first direction, and the first charge transport layer and the first conductive layer are arranged in a second direction. The first charge transport layer and the first conductive layer are arranged in a first direction, and the first charge transport layer and the first conductive layer are arranged in a second direction. The first charge transport layer and the first conductive layer are arranged in a first direction, and the first charge transport layer and the first conductive layer are arranged in a second direction. The first charge transport layer and the first conductive layer are arranged in a first direction, and the first charge transport layer and the first conductive layer are arranged in a second direction. The first charge transport layer and the first conductive layer are arranged in a first direction, and the first charge transport layer and the first conductive layer are arranged in a second direction. The first charge transport layer and the first conductive layer are arranged in a first direction, and the first charge transport layer and the first conductive layer are arranged in a second direction. The first charge transport layer and the first conductive layer are arranged in a first direction, and the first charge transport layer and the first conductive layer are arranged in a second direction. The first charge transport layer and the first conductive layer are arranged in a first direction, and the first charge transport layer and the first conductive layer are arranged in a second direction. The first charge transport layer and the first conductive layer are arranged in a first direction, and the first charge transport layer and the first conductive layer are arranged in a second direction. The first charge transport layer and the first conductive layer are arranged in a first direction, and the first charge transport layer and the first conductive layer are arranged in a second direction. The first charge transport layer and the first conductive layer are arranged in a first direction, and the first charge transport layer and the first conductive layer are arranged in a second direction. The first charge transport layer and the first conductive layer are arranged in a first direction, and the first charge transport layer and the first conductive layer are arranged in a second direction. The first charge transport layer and the first conductive layer are arranged in a first direction, and the first charge transport layer and the first conductive layer are arranged in a second

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