A method of ion implantation into graphite

Abstract

The application provides a kind of ion implantation graphite preparation method, it is related to the technical field of semiconductor material preparation, including the following steps: stirring ingredients: 100-200 parts furan resin A is mixed with 100-200 parts solvent E, 1-3 parts B auxiliary agent, 3-6 parts C auxiliary agent, 0.06-0.2 parts D auxiliary agent, stirring forms resin solution;Soak: graphite blank is soaked in resin solution under the vacuum degree ≤10kPa 0.5-2 hours;Solidification: graphite blank is programmed to 180 DEG C under 0.5-2MPa pressure and keeps warm solidification;The application is optimized by furan resin formula and process, the performance of graphite is significantly improved, uniform penetration is realized using low viscosity resin solution, combined with B, C auxiliary agent catalysis forms disordered three-dimensional network structure, so that graphite weight gain reaches more than 1.5%, shore hardness is significantly improved, effectively enhances the resistance to ion impact ability and structural stability, prolongs the service life.

Description

Technical Field

[0001] This invention relates to the field of semiconductor material preparation technology, and in particular to a method for preparing ion-implanted graphite. Background Technology

[0002] In the semiconductor industry, ion implantation is a key technology for controlling the threshold voltage of MOSFETs, which places extremely high demands on the performance of graphite materials. While graphite materials are widely used in ion implanters for ion generation, acceleration, and transport, their resistance to ion impact is limited, and they suffer from the following drawbacks:

[0003] Insufficient corrosion resistance: Traditional graphite materials are prone to structural damage under long-term ion beam bombardment, leading to a shortened lifespan. For example, microcracks easily form on the surface of conventional graphite during ion implantation, affecting its stability. Difficulty in impurity control: Existing purification processes are difficult to effectively remove impurities such as silicon and oxides from graphite, resulting in the introduction of impurities during ion implantation and affecting the performance of semiconductor devices. High process cost: Traditional impregnation processes are complex to operate, the resin cures quickly, cannot be reused, and the process time is long, increasing production costs. Therefore, this invention proposes an ion-implanted graphite preparation method to solve the problems existing in the prior art. Summary of the Invention

[0004] To address the aforementioned problems, this invention proposes an ion-implanted graphite preparation method. This method significantly improves graphite performance by optimizing the furan resin formulation and process. It utilizes a low-viscosity resin solution to achieve uniform penetration and combines B and C additives to catalyze the formation of a disordered three-dimensional network structure, resulting in a graphite weight gain of over 1.5%, a significant increase in Shore hardness, and effectively enhanced resistance to ion impact and structural stability.

[0005] To achieve the objectives of this invention, the invention is implemented through the following technical solution: a method for preparing ion-implanted graphite, comprising the following steps:

[0006] Mixing and mixing ingredients: Mix 100-200 parts of furan resin A with 100-200 parts of solvent E, add 1-3 parts of auxiliary agent B, 3-6 parts of auxiliary agent C, and 0.06-0.2 parts of auxiliary agent D, and stir to form a resin solution;

[0007] Immersion: Immerse the graphite blank in the resin solution for 0.5-2 hours under a vacuum of ≤10kPa;

[0008] Curing: The graphite blank is heated to 180℃ under a pressure of 0.5-2MPa and held for curing. After cooling, the graphite material is obtained.

[0009] Carbonization: The graphite material is heated to 1000-1300℃ in an oxygen-free environment at a rate of 0.005-10℃ / min and held at that temperature.

[0010] Purification: Under argon protection, the temperature is raised to 2200-2400℃ in stages, and fluorine-containing compounds are introduced to decompose and generate fluorine gas for impurity reaction.

[0011] A further improvement is that: the auxiliary agent B is one of acetic acid, citric acid, oxalic acid and phytic acid, preferably phytic acid; the auxiliary agent C is benzenesulfonic acid; the auxiliary agent D is one of liquid alcohols such as methanol, ethylene glycol, ethanol and propanol; and the solvent E is one of benzene, acetone, ethanol, diethyl ether and chloroform, preferably anhydrous ethanol.

[0012] A further improvement is made in the following way: The preparation method of the C auxiliary agent is as follows: the mass ratio of C auxiliary agent to ethanol is 1:1. First, weigh 1 part of C auxiliary agent and put it into the stirring container, then add 1 part of ethanol, and stir with a temperature-controlled magnetic stirrer at 0-50℃ until completely dissolved.

[0013] A further improvement is made in the following way: The preparation method of the D additive is as follows: the mass ratio of the D additive to the ultrapure water is 1:2. First, weigh 2 parts of ultrapure water and put them into a beaker, then add 1 part of the D additive, and stir evenly with a glass rod.

[0014] A further improvement is that the mixing and preparation includes the following steps:

[0015] First, weigh 100 parts of furan resin A and add it to the mixing tank. Stir at 200-500 rpm at 15-35℃.

[0016] Add 100-200 parts of solvent E, slowly and evenly add 1-3 parts of auxiliary agent B, stir evenly, then slowly add 3-6 parts of auxiliary agent C, and finally stir evenly and slowly add 0.06-0.2 parts of auxiliary agent D.

[0017] After adding all the additives, adjust the speed to 300-700 rpm and stir for at least 30 minutes. After stirring, clean the mixing plate.

[0018] A further improvement is that the soaking includes the following steps:

[0019] The graphite blank is loaded into the material frame, then the material frame is hoisted into the material bucket, and finally the material bucket is hoisted into the impregnation tank;

[0020] Turn on the vacuum pump and evacuate to a vacuum level of ≤10Kpa. Maintain this vacuum level for at least 30 minutes. Keep the temperature between 5-35℃ before absorbing the resin solution.

[0021] Vacuum the resin solution, maintain a vacuum of ≤10 kPa, and hold for 0.5-2 hours;

[0022] After soaking, release the pressure to normal, open the lid and lift the barrel out. After lifting it out, raise the frame to drain the resin. Take out the graphite blank from the barrel and wipe it. At the same time, pour out the resin from the barrel.

[0023] A further improvement is that the curing process includes the following steps:

[0024] After separating the graphite blanks with paper, place them into a small material tube, then place them into the material tube, and lower the material tube into the impregnation tank, then close the tank lid;

[0025] After evacuating to below 10 kPa, pressurize to 0.5-2 MPa, raise the temperature to 180°C, and hold for 2 hours.

[0026] After cooling to 60°C, remove from the furnace. After removing from the furnace, tear off the paper to obtain graphite material.

[0027] A further improvement is that the carbonization includes the following steps:

[0028] Arrange the graphite material vertically in the crucible;

[0029] Heat from room temperature to 1000-1300℃ at a heating rate of 0.005-10℃ / min, and hold at the highest temperature for 2-10 hours;

[0030] After the material is removed from the furnace, any foreign objects on it should be cleaned off.

[0031] A further improvement is that the purification includes the following steps:

[0032] The graphite material is placed vertically into the furnace;

[0033] The purification furnace is evacuated to a negative pressure using waste gas treatment facilities. The furnace is then heated to 1000℃ using resistance heating at a rate of 1-10℃ / min and held at 1800℃ for 30 hours.

[0034] At the same time, argon gas is introduced into the furnace and between the furnace shell to maintain a slight negative pressure. The argon gas flow rate is 10-50 L / min. Finally, the temperature is raised to 2000℃.

[0035] Continue heating to 2200-2400℃, while simultaneously introducing Freon. Freon decomposes into fluorine gas at high temperatures. The fluorine gas produced by decomposition enters the interior of the graphite through the pores of the graphite and reacts with various impurities in the graphite to produce fluorides.

[0036] After the material is removed from the furnace, any foreign objects on it should be cleaned off.

[0037] A further improvement is made by stopping the gas flow after introducing 40-80% of the Freon, maintaining the temperature at 2300-2400℃.

[0038] The beneficial effects of this invention are as follows:

[0039] 1. This invention significantly improves graphite performance by optimizing the furan resin formulation and process. It uses a low-viscosity resin solution to achieve uniform penetration, and combines B and C additives to catalyze the formation of a disordered three-dimensional network structure, resulting in a graphite weight gain of more than 1.5%, a significant increase in Shore hardness, and effectively enhanced resistance to ion impact and structural stability, thus extending the service life in ion implantation environments.

[0040] 2. This invention employs a Freon purification process. At high temperatures, the fluorine gas produced by Freon decomposition can penetrate deep into the graphite and fully react with various impurities to generate low-boiling-point fluorides that volatilize, significantly reducing the impurity content and increasing the graphite purity to over 99.99%. This avoids the impact of impurities on the performance of semiconductor devices.

[0041] 3. This invention reduces resin viscosity and slows down curing speed by adjusting the solvent ratio, enabling the resin to be reused multiple times. At the same time, it simplifies the soaking process, shortens the process time, reduces raw material consumption and process time, significantly reduces production costs, and is more suitable for large-scale mass production needs. Attached Figure Description

[0042] Figure 1 This is a flowchart of the present invention. Detailed Implementation

[0043] To enhance understanding of the present invention, the present invention will be further described in detail below with reference to embodiments. These embodiments are only used to explain the present invention and do not constitute a limitation on the scope of protection of the present invention.

[0044] Example 1

[0045] according to Figure 1 As shown, this embodiment proposes a method for preparing ion-implanted graphite, including the following steps:

[0046] Mixing and Batching: First, weigh 100 parts of furan resin A and add it to a mixing tank. Stir at 200-500 rpm at 15-35℃. Add 100 parts of solvent E, then slowly and evenly add 1.5 parts of additive B. Stir until homogeneous, then slowly add 5 parts of additive C. Finally, stir until homogeneous again, then slowly add 0.12 parts of additive D. After adding all additives, adjust the speed to 300-700 rpm and stir for at least 30 minutes. After stirring, clean the mixing tank. Additive B is one of acetic acid, citric acid, oxalic acid, and phytic acid, preferably phytic acid. Additive C is benzenesulfonic acid. Additive D is one of liquid alcohols, namely methanol, ethylene glycol, ethanol, and propanol. Solvent E is one of benzene, acetone, ethanol, diethyl ether, and chloroform, preferably anhydrous ethanol. The preparation method for additive C is as follows: Additive C and ethanol are added at a mass ratio of 1:1. First, weigh 1 part of additive C and put it into a stirring container, then add 1 part of ethanol, and stir with a temperature-controlled magnetic stirrer at 0-50℃ until completely dissolved. The preparation method for additive D is as follows: Additive D and ultrapure water are added at a mass ratio of 1:2. First, weigh 2 parts of ultrapure water and put it into a beaker, then add 1 part of additive D, and stir evenly with a glass rod.

[0047] Soaking: Load the graphite blank into the material frame, then lower the material frame into the material bucket, and finally lower the material cylinder into the impregnation tank; turn on the vacuum pump and evacuate to a vacuum of ≤10Kpa, maintain for more than 30 minutes, and control the temperature at 5-35℃ before absorbing the resin solution; vacuum inhale the resin solution, maintain a vacuum of ≤10Kpa, and maintain for 0.5-2 hours; after soaking, release the gas to normal pressure, open the lid and lift the material cylinder out, then raise the material frame to drain the resin, remove the graphite blank from the material cylinder and wipe it, while pouring out the resin from the material cylinder;

[0048] Curing: After separating the graphite blank with paper, place it in a small cylinder, then place it in the cylinder. Hang the cylinder into the impregnation tank and close the tank lid. After evacuating to below 10 kPa, pressurize to 0.5-2 MPa, heat to 180°C, and hold for 2 hours. After cooling to 60°C, remove from the furnace. After removing from the furnace, tear off the paper to obtain the graphite material.

[0049] Carbonization: The graphite material is vertically placed into the crucible; the temperature is increased from room temperature to 1000-1300℃ at a rate of 0.005-10℃ / min, and held at the highest temperature for 2-10 hours; after removing the material from the furnace, foreign matter is cleaned off.

[0050] Purification: The graphite material is vertically discharged into the furnace; the purification furnace is evacuated to a negative pressure using a waste gas treatment facility, and the temperature is first raised to 1000℃ using resistance heating at a rate of 1-10℃ / min, and then held at 1800℃ for 30 hours; simultaneously, argon gas is introduced into the furnace and between the furnace shell to maintain a slight negative pressure at a rate of 10-50L / min, and finally the temperature is raised to 2000℃; heating continues to 2200-2400℃, while simultaneously introducing Freon. After introducing 40-80% of the Freon, the temperature is maintained at 2300-2400℃ and the gas supply is stopped. The Freon decomposes into fluorine gas at high temperatures, and the fluorine gas produced by decomposition enters the graphite interior through the graphite pores and reacts with various impurities in the graphite to produce fluorides; after exiting the furnace, foreign matter on the graphite material is cleaned off.

[0051] Performance data:

[0052] Raw material (before treatment): density 1.89 g / cm³, Shore hardness 75, apparent porosity 8.14%;

[0053] After carbonization: weight gain 1.54%, Shore hardness 80;

[0054] The resin can be used more than 5 times.

[0055] Example 2

[0056] according to Figure 1 As shown, this embodiment proposes a method for preparing ion-implanted graphite, including the following steps:

[0057] Mixing and Batching: First, weigh 100 parts of furan resin A and add it to a mixing tank. Stir at 200-500 rpm at 15-35℃. Add 200 parts of solvent E, then slowly and evenly add 1.5 parts of auxiliary agent B. Stir until homogeneous, then slowly add 5 parts of auxiliary agent C. Finally, stir until homogeneous and slowly add 0.12 parts of auxiliary agent D. After adding all the auxiliary agents, adjust the speed to 300-700 rpm and stir for at least 30 minutes. After stirring, clean the mixing tank. Auxiliary agent B is one of acetic acid, citric acid, oxalic acid, and phytic acid, preferably phytic acid. Auxiliary agent C is benzenesulfonic acid. Auxiliary agent D is one of liquid alcohols, namely methanol, ethylene glycol, ethanol, and propanol. Solvent E is one of benzene, acetone, ethanol, diethyl ether, and chloroform, preferably anhydrous ethanol. The preparation method for additive C is as follows: Additive C and ethanol are added at a mass ratio of 1:1. First, weigh 1 part of additive C and put it into a stirring container, then add 1 part of ethanol, and stir with a temperature-controlled magnetic stirrer at 0-50℃ until completely dissolved. The preparation method for additive D is as follows: Additive D and ultrapure water are added at a mass ratio of 1:2. First, weigh 2 parts of ultrapure water and put it into a beaker, then add 1 part of additive D, and stir evenly with a glass rod.

[0058] Soaking: Load the graphite blank into the material frame, then lower the material frame into the material bucket, and finally lower the material cylinder into the impregnation tank; turn on the vacuum pump and evacuate to a vacuum of ≤10Kpa, maintain for more than 30 minutes, and control the temperature at 5-35℃ before absorbing the resin solution; vacuum inhale the resin solution, maintain a vacuum of ≤10Kpa, and maintain for 0.5-2 hours; after soaking, release the gas to normal pressure, open the lid and lift the material cylinder out, then raise the material frame to drain the resin, remove the graphite blank from the material cylinder and wipe it, while pouring out the resin from the material cylinder;

[0059] Curing: After separating the graphite blank with paper, place it in a small cylinder, then place it in the cylinder. Hang the cylinder into the impregnation tank and close the tank lid. After evacuating to below 10 kPa, pressurize to 0.5-2 MPa, heat to 180°C, and hold for 2 hours. After cooling to 60°C, remove from the furnace. After removing from the furnace, tear off the paper to obtain the graphite material.

[0060] Carbonization: The graphite material is vertically placed into the crucible; the temperature is increased from room temperature to 1000-1300℃ at a rate of 0.005-10℃ / min, and held at the highest temperature for 2-10 hours; after removing the material from the furnace, foreign matter is cleaned off.

[0061] Purification: The graphite material is vertically discharged into the furnace; the purification furnace is evacuated to a negative pressure using a waste gas treatment facility, and the temperature is first raised to 1000℃ using resistance heating at a rate of 1-10℃ / min, and then held at 1800℃ for 30 hours; simultaneously, argon gas is introduced into the furnace and between the furnace shell to maintain a slight negative pressure at a rate of 10-50L / min, and finally the temperature is raised to 2000℃; heating continues to 2200-2400℃, while simultaneously introducing Freon. After introducing 40-80% of the Freon, the temperature is maintained at 2300-2400℃ and the gas supply is stopped. The Freon decomposes into fluorine gas at high temperatures, and the fluorine gas produced by decomposition enters the graphite interior through the graphite pores and reacts with various impurities in the graphite to produce fluorides; after exiting the furnace, foreign matter on the graphite material is cleaned off.

[0062] Performance data:

[0063] Raw material (before treatment): density 1.88 g / cm³, Shore hardness 76, apparent porosity 8.33%;

[0064] After carbonization: weight gain 0.68%, Shore hardness 81;

[0065] The resin can be used more than 5 times.

[0066] Example 3

[0067] according to Figure 1 As shown, this embodiment proposes a method for preparing ion-implanted graphite, including the following steps:

[0068] Mixing and Batching: First, weigh 200 parts of furan resin A and add it to a mixing tank. Stir at 200-500 rpm at 15-35℃. Add 100 parts of solvent E, then slowly and evenly add 1.5 parts of additive B. Stir until homogeneous, then slowly add 5 parts of additive C. Finally, stir until homogeneous again, then slowly add 0.12 parts of additive D. After adding all additives, adjust the speed to 300-700 rpm and stir for at least 30 minutes. After stirring, clean the mixing tank. Additive B is one of acetic acid, citric acid, oxalic acid, and phytic acid, preferably phytic acid. Additive C is benzenesulfonic acid. Additive D is one of liquid alcohols, namely methanol, ethylene glycol, ethanol, and propanol. Solvent E is one of benzene, acetone, ethanol, diethyl ether, and chloroform, preferably anhydrous ethanol. The preparation method for additive C is as follows: Additive C and ethanol are added at a mass ratio of 1:1. First, weigh 1 part of additive C and put it into a stirring container, then add 1 part of ethanol, and stir with a temperature-controlled magnetic stirrer at 0-50℃ until completely dissolved. The preparation method for additive D is as follows: Additive D and ultrapure water are added at a mass ratio of 1:2. First, weigh 2 parts of ultrapure water and put it into a beaker, then add 1 part of additive D, and stir evenly with a glass rod.

[0069] Soaking: Load the graphite blank into the material frame, then lower the material frame into the material bucket, and finally lower the material cylinder into the impregnation tank; turn on the vacuum pump and evacuate to a vacuum of ≤10Kpa, maintain for more than 30 minutes, and control the temperature at 5-35℃ before absorbing the resin solution; vacuum inhale the resin solution, maintain a vacuum of ≤10Kpa, and maintain for 0.5-2 hours; after soaking, release the gas to normal pressure, open the lid and lift the material cylinder out, then raise the material frame to drain the resin, remove the graphite blank from the material cylinder and wipe it, while pouring out the resin from the material cylinder;

[0070] Curing: After separating the graphite blank with paper, place it in a small cylinder, then place it in the cylinder. Hang the cylinder into the impregnation tank and close the tank lid. After evacuating to below 10 kPa, pressurize to 0.5-2 MPa, heat to 180°C, and hold for 2 hours. After cooling to 60°C, remove from the furnace. After removing from the furnace, tear off the paper to obtain the graphite material.

[0071] Carbonization: The graphite material is vertically placed into the crucible; the temperature is increased from room temperature to 1000-1300℃ at a rate of 0.005-10℃ / min, and held at the highest temperature for 2-10 hours; after removing the material from the furnace, foreign matter is cleaned off.

[0072] Purification: The graphite material is vertically discharged into the furnace; the purification furnace is evacuated to a negative pressure using a waste gas treatment facility, and the temperature is first raised to 1000℃ using resistance heating at a rate of 1-10℃ / min, and then held at 1800℃ for 30 hours; simultaneously, argon gas is introduced into the furnace and between the furnace shell to maintain a slight negative pressure at a rate of 10-50L / min, and finally the temperature is raised to 2000℃; heating continues to 2200-2400℃, while simultaneously introducing Freon. After introducing 40-80% of the Freon, the temperature is maintained at 2300-2400℃ and the gas supply is stopped. The Freon decomposes into fluorine gas at high temperatures, and the fluorine gas produced by decomposition enters the graphite interior through the graphite pores and reacts with various impurities in the graphite to produce fluorides; after exiting the furnace, foreign matter on the graphite material is cleaned off.

[0073] Performance data:

[0074] Raw material (before treatment): density 1.91 g / cm³, Shore hardness 75, apparent porosity 9.34%;

[0075] After carbonization: weight gain 2.18%, Shore hardness 83;

[0076] The resin can be used more than 5 times.

[0077] Experimental results:

[0078]

[0079] In summary, according to Example 3, the number of times the resin was used increased from 2 to more than 5 times. The Shore hardness was not significantly different from that without solvent. The resistivity was tested using sample No. 3. It has a flexural strength of 110 MPa, a coefficient of thermal expansion of 6.01E-6 / ℃, and a thermal conductivity of 100 W / mK.

[0080] This ion-implanted graphite preparation method significantly improves graphite performance by optimizing the furan resin formulation and process. It utilizes a low-viscosity resin solution to achieve uniform penetration, and combined with B and C additives to catalyze the formation of a disordered three-dimensional network structure, resulting in a graphite weight gain of over 1.5%, a significant increase in Shore hardness, and effectively enhanced resistance to ion impact and structural stability, extending its service life in ion-implanted environments. Furthermore, this invention employs a Freon purification process. At high temperatures, the fluorine gas generated from Freon decomposition penetrates deep into the graphite, reacting fully with various impurities to generate low-boiling-point fluorides that volatilize, significantly reducing impurity content and increasing graphite purity to over 99.99%, thus preventing the introduction of impurities from affecting semiconductor device performance. Simultaneously, this invention reduces resin viscosity by adjusting the solvent ratio, slowing down the curing speed and enabling multiple resin reuses. It also simplifies the soaking process, shortens process time, reduces raw material consumption and process time, significantly lowering production costs and making it more suitable for large-scale mass production.

[0081] The foregoing has shown and described the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of the invention. Various changes and modifications can be made to the invention without departing from its spirit and scope, and all such changes and modifications fall within the scope of the present invention as claimed. The scope of protection of the present invention is defined by the appended claims and their equivalents.

Claims

1. A method for preparing ion-implanted graphite, characterized in that, Includes the following steps: Mixing and mixing ingredients: Mix 100-200 parts of furan resin A with 100-200 parts of solvent E, add 1-3 parts of auxiliary agent B, 3-6 parts of auxiliary agent C, and 0.06-0.2 parts of auxiliary agent D, and stir to form a resin solution; Immersion: Immerse the graphite blank in the resin solution for 0.5-2 hours under a vacuum of ≤10kPa. The specific steps include: loading the graphite blank into the material frame, then suspending the material frame into the material cylinder, and finally suspending the material cylinder into the impregnation tank; turning on the vacuum pump and evacuating to a vacuum of ≤10kPa, maintaining it for more than 30 minutes, and controlling the temperature at 5-35℃ before absorbing the resin solution; vacuuming in the resin solution, maintaining a vacuum of ≤10kPa, and maintaining it for 0.5-2 hours; after immersion, releasing the gas to normal pressure, opening the lid and suspending the material cylinder out, then raising the material frame to drain the resin, removing the graphite blank from the material cylinder and wiping it, while pouring out the resin from the material cylinder. Curing: The graphite preform is heated to 180℃ under a pressure of 0.5-2MPa and held for curing. After cooling, the graphite material is obtained. The specific steps include: separating the graphite preform with paper and placing it in a small cylinder, then placing it in the cylinder. The cylinder is then lowered into an impregnation tank, and the tank lid is closed. After evacuating to below 10kPa, the pressure is increased to 0.5-2MPa, and the temperature is raised to 180℃ and held for 2 hours. After cooling to 60℃, the preform is removed from the furnace. After removing it from the furnace, the paper is removed to obtain the graphite material. Carbonization: The graphite material is heated to 1000-1300℃ in an oxygen-free environment at a rate of 0.005-10℃ / min and held at that temperature. The specific steps include: vertically arranging the graphite material into the crucible; heating from room temperature to 1000-1300℃ at a rate of 0.005-10℃ / min, holding at the highest temperature for 2-10 hours; and cleaning off any foreign matter from the graphite material after removing it from the furnace. Purification: Under argon protection, the temperature is raised to 2200-2400℃ in stages. Fluorine-containing compounds are introduced to decompose and generate fluorine gas to react with impurities. The specific steps include: vertically feeding the graphite material into the furnace; using a waste gas treatment facility to create a negative pressure inside the purification furnace, heating it to 1000℃ inside the furnace first, with a heating rate of 1-10℃ / min, and holding it at 1800℃ for 30 hours; simultaneously, argon gas is introduced into the furnace and between the furnace shell to maintain a slight negative pressure, with an argon gas flow rate of 10-50L / min, and finally the temperature is raised to 2000℃; heating continues to 2200-2400℃, while simultaneously introducing Freon. Freon decomposes into fluorine gas at high temperature, and the fluorine gas generated by decomposition enters the graphite interior through the graphite pores and reacts with various impurities in the graphite to produce fluorides; after exiting the furnace, foreign matter on the graphite material is cleaned off.

2. The method for preparing ion-implanted graphite according to claim 1, characterized in that: The auxiliary agent B is one of acetic acid, citric acid, oxalic acid and phytic acid; the auxiliary agent C is benzenesulfonic acid; the auxiliary agent D is one of liquid alcohols: methanol, ethylene glycol, ethanol and propanol; and the solvent E is one of benzene, acetone, ethanol, diethyl ether and chloroform.

3. The method for preparing ion-implanted graphite according to claim 2, characterized in that: The preparation method of the C auxiliary agent is as follows: the mass ratio of C auxiliary agent to ethanol is 1:

1. First, weigh 1 part of C auxiliary agent and put it into the stirring container, then add 1 part of ethanol, and stir with a temperature-controlled magnetic stirrer at 0-50℃ until completely dissolved.

4. The method for preparing ion-implanted graphite according to claim 3, characterized in that: The preparation method of the D additive is as follows: the mass ratio of the D additive to ultrapure water is 1:

2. First, weigh 2 parts of ultrapure water and put them into a beaker, then add 1 part of the D additive, and stir evenly with a glass rod.

5. The method for preparing ion-implanted graphite according to claim 1, characterized in that: The mixing and preparation process includes the following steps: First, weigh 100 parts of furan resin A and add it to the mixing tank. Stir at 200-500 rpm at 15-35℃. Add 100-200 parts of solvent E, slowly and evenly add 1-3 parts of auxiliary agent B, stir evenly, then slowly add 3-6 parts of auxiliary agent C, and finally stir evenly and slowly add 0.06-0.2 parts of auxiliary agent D. After adding all the additives, adjust the speed to 300-700 rpm and stir for at least 30 minutes. After stirring, clean the mixing plate.

6. The method for preparing ion-implanted graphite according to claim 1, characterized in that: After introducing 40-80% of Freon, maintain the temperature at 2300-2400℃ and then stop the gas supply.

Images