Radiation imaging device

Abstract

A radiation imaging apparatus according to an embodiment includes: a sensor panel; a support member that supports the sensor panel; a control substrate disposed at a position facing the rear surface of the support member; a flexible substrate configured to connect the sensor panel and the control substrate; an IC chip mounted on the flexible substrate; and a heat absorbing member that is provided between the support member and the IC chip and absorbs heat from the IC chip. The heat-absorbing member has: a heat-absorbing part that is disposed in a region overlapping the flexible substrate and that has a contact surface that comes into contact with the surface of the IC chip; and a heat dissipation part which is connected to the heat absorption part and extends to the outside of the outer edge of the flexible substrate. The thickness of the heat dissipation part is larger than that of the heat absorption part.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a radiation imaging apparatus. BACKGROUND

[0002] A radiation imaging apparatus having a sensor panel (radiation detection panel) supported by a support member, a control substrate (signal processing substrate) disposed on the opposite side of the sensor panel via the support member, and a flexible substrate disposed so as to be wound around the side of the support member and connecting the sensor panel and the control substrate is known (for example, refer to Patent Documents 1 and 2). In Patent Document 1, a structure in which an adhesive and thermally conductive fixing material (for example, silicone gel, urethane gel, acrylic gel, or the like) is disposed between an IC chip provided on the flexible substrate and the support member is disclosed. In Patent Document 2, a structure in which an IC chip provided on the flexible substrate and the support member (support base) are fixedly attached by a fixing material (adhesive or adhesive tape) having heat dissipation and adhesion is disclosed.

[0003] PRIOR ART DOCUMENTS

[0004] PATENT DOCUMENTS

[0005] Patent Document 1: Japanese Patent Application Publication No. 2014-025846

[0006] Patent Document 2: Japanese Patent Application Publication No. 2002-131437 SUMMARY

[0007] PROBLEMS TO BE SOLVED BY THE INVENTION

[0008] According to the structures disclosed in the above-described Patent Documents 1 and 2, heat generated by the IC chip is released (transferred) to the support member via the fixing material. However, the heat transferred to the support member is also transferred to the sensor panel via the support member, as a result of which noise caused by heat is generated in the sensor panel, degradation of the quality of a radiation image obtained by the radiation imaging apparatus occurs, and there are concerns that the reliability of the radiation imaging apparatus is reduced.

[0009] An object of one embodiment of the present disclosure is to provide a radiation imaging apparatus in which the reliability can be improved.

[0010] TECHNICAL MEANS FOR SOLVING THE PROBLEMS

[0011] The present disclosure includes a radiation imaging apparatus of [1] to

[12] .

[0012] [1] A radiation imaging apparatus comprising:

[0013] a sensor panel provided with a detection region that detects radiation;

[0014] a support member having a support surface that supports the sensor panel, and a back surface opposite the support surface;

[0015] a control substrate disposed at a position opposite the back surface of the support member, and processing a signal read out from the sensor panel;

[0016] a flexible substrate configured to connect the sensor panel and the control substrate via a side of the support member when viewed in a first direction orthogonal to the support surface;

[0017] an IC chip mounted on the flexible substrate, and performing processing for reading out the signal from the sensor panel; and

[0018] a heat absorbing member disposed between the support member and the IC chip on a side opposite the side where the sensor panel is disposed with respect to the support member, and absorbing heat from the IC chip,

[0019] the heat absorbing member has:

[0020] a heat absorbing portion disposed in an area overlapping the flexible substrate when viewed in the first direction, and having a contact surface on a side in contact with a surface opposite a mounting surface of the IC chip with respect to the flexible substrate; and

[0021] a heat radiating portion connected to the heat absorbing portion, and extending to an outer side than an outer edge of the flexible substrate in a third direction crossing a second direction that is an extending direction of the flexible substrate, when viewed in the first direction,

[0022] a thickness of the heat radiating portion in the first direction is greater than a thickness of the heat absorbing portion in the first direction.

[0023] In the structure of the above [1], the heat absorbing member has: a heat absorbing portion configured to overlap the flexible substrate and efficiently absorb heat from the IC chip via the contact surface; and a heat radiating portion formed to extend to an outer side (third direction) of the heat absorbing portion. By providing the heat radiating portion in addition to the heat absorbing portion, and providing the heat radiating portion having a thickness greater than that of the heat absorbing portion at a position not overlapping the flexible substrate in the first direction, the volume and heat capacity of the entire heat absorbing member can be effectively increased, and the surface area of the portion in contact with air in the heat radiating portion can be appropriately ensured. Thus, the heat absorbing member can efficiently absorb heat from the IC chip, and can appropriately release heat from the heat radiating portion to air. As a result, movement of heat from the heat absorbing member to the support member, i.e., movement of heat from the heat absorbing member to the sensor panel via the support member, can be suppressed, and thus generation of noise in the sensor panel due to the heat can be suppressed. Therefore, according to the structure of the above [1], deterioration of the quality of a radiographic image due to the noise, and the like, is suppressed, and thus the reliability of the radiographic apparatus can be improved.

[0024] [2] The radiographic apparatus according to [1], wherein the heat absorbing member is not bonded to the flexible substrate and the IC chip.

[0025] According to the structure of the above [2], since the flexible substrate and the IC chip are not bonded to the support member via the heat absorbing member, when maintenance (repair) of the radiographic apparatus is performed, or the like, replacement work of the flexible substrate and the IC chip can be easily performed.

[0026] [3] The radiographic apparatus according to [1] or [2], wherein the heat absorbing member has a plurality of sheet members stacked in the first direction.

[0027] According to the structure of the above [3], by adjusting the number of sheet members (number of layers) constituting the heat absorbing member, for example, from the viewpoint of efficiently moving heat from the IC chip to the heat absorbing member, the thickness of the heat absorbing member in the first direction can be easily adjusted so that the heat absorbing member is pressed to the IC chip with an appropriate strength.

[0028] [4] The radiographic apparatus according to any one of [1] to [3], wherein the heat absorbing member is disposed outside the detection region when viewed in the first direction.

[0029] According to the structure of the above [4], since the influence of heat absorbed by the heat absorbing member on the detection region can be further effectively reduced, generation of noise in the sensor panel (detection region) due to heat can be further effectively suppressed.

[0030] [5] The radiographic apparatus according to any one of [1] to [4], wherein a thickness of the heat-absorbing member in the first direction is set to be substantially uniform in the entire region of the heat-absorbing member in the third direction in a natural state,

[0031] The heat-absorbing portion is provided in a state of being sandwiched by the flexible substrate and the support member and being compressed in the first direction.

[0032] According to the structure of the above [5], by configuring to apply a force of compressing the portion (i.e., the heat-absorbing portion) between the flexible substrate and the support member in the heat-absorbing member having a substantially uniform thickness in a natural state, the heat-absorbing portion and the heat-dissipating portion satisfying the size relationship of the thickness defined in the above [1] can be easily formed.

[0033] [6] The radiographic apparatus according to any one of [1] to [5], wherein one end of the flexible substrate is connected to a terminal of a connection surface provided on a surface opposite to the back surface of the control substrate,

[0034] A capacitor is provided in the flexible substrate between the one end and a region on which the IC chip is mounted,

[0035] The heat-absorbing member is configured not to be in contact with the capacitor.

[0036] According to the structure of the above [6], heat generated by the IC chip can be suppressed from being transmitted to the capacitor via the heat-absorbing member. As a result, deterioration of characteristics of the capacitor due to heat can be suppressed.

[0037] [7] The radiographic apparatus according to any one of [1] to [6], wherein one end of the flexible substrate is connected to a terminal of a connection surface provided on a surface opposite to the back surface of the control substrate,

[0038] A capacitor is provided in the flexible substrate between the one end and a region on which the IC chip is mounted,

[0039] An inner side end portion of the contact surface of the heat-absorbing portion, which is farthest from the control substrate, is located at a position farther from the back surface than the connection surface of the control substrate in the first direction, so that the capacitor is configured not to be in contact with the control substrate.

[0040] In the structure of the above [7], by configuring the heat-absorbing member (heat-absorbing portion) as described above between the support member and the IC chip, a portion of the flexible substrate between the one end and the region on which the IC chip is mounted can be separated from the connection surface of the control substrate. Thus, the capacitor can be prevented from being damaged by being in contact with the control substrate.

[0041] [8] The radiographic apparatus according to any one of [1] to [7], wherein one end of the flexible substrate is connected to a terminal of a connection surface provided on a surface of the control substrate opposite to the back surface,

[0042] The contact surface of the heat-absorbing portion is inclined in such a way that it moves away from the back surface in the first direction as it approaches the control substrate in the second direction when viewed in the third direction.

[0043] According to the structure of the above [8], the risk of the portion of the flexible substrate near the control substrate coming into contact with the connection surface of the control substrate (or the risk of a portion of the flexible substrate being pressed against the edge portion of the connection surface of the control substrate by a strong force) can be reduced, and the overall length of the flexible substrate can be shortened.

[0044] [9] The radiographic apparatus according to any one of [1] to [8], wherein the support member has a base substrate having the support surface and the back surface, and a radiation shielding member provided to an edge portion of the base substrate when viewed in the first direction,

[0045] The heat-absorbing member is provided between the radiation shielding member and the IC chip.

[0046] According to the structure of the above [9], the radiation shielding member is interposed between the base substrate of the support member that supports the sensor panel and the heat-absorbing member. As a result, the transfer of heat from the heat-absorbing member to the base substrate, and further to the sensor panel, can be further effectively suppressed.

[0047]

[10] The radiographic apparatus according to [9], wherein the heat capacity of the heat-absorbing member is larger than the heat capacity of the radiation shielding member.

[0048] According to the structure of the above

[10] , since the movement of heat from the heat-absorbing member to the radiation shielding member can be effectively suppressed, the transfer of heat from the heat-absorbing member to the sensor panel via the support member (the radiation shielding member and the base substrate) can be further effectively suppressed.

[0049]

[11] The radiographic apparatus according to [9] or

[10] , wherein the radiation shielding member is disposed at a position overlapping with an outer edge portion of the control substrate or further outward than the outer edge portion when viewed in the first direction,

[0050] The range in which the heat-absorbing member is disposed in the second direction is included in the range in which the radiation shielding member is disposed in the second direction.

[0051] According to the structure of the above

[11] , interference (contact) of the heat absorbing member with the control substrate can be suitably suppressed. Thus, the assembly work (for example, work of connecting one end of the flexible substrate to a terminal of the control substrate, and the like) can be facilitated, and the heat generated from the IC chip can be suppressed from being transmitted to the control substrate via the heat absorbing member.

[0052]

[12] The radiation imaging apparatus according to any one of [1] to

[11] , comprising: a plurality of the flexible substrates each carrying the IC chip, arranged along the third direction,

[0053] 1 heat absorbing member extends along the third direction in correspondence with the plurality of the flexible substrates.

[0054] According to the structure of the above

[12] , by providing one heat absorbing member elongated in the third direction to the plurality of the IC chips (flexible substrates) arranged along the third direction, the volume and the heat capacity of the heat absorbing member can be further effectively increased. Thus, the movement of the heat from the heat absorbing member to the support member, that is, the movement of the heat from the heat absorbing member to the sensor panel via the support member can be further effectively suppressed.

[0055] Effects of Invention

[0056] According to one embodiment of the present disclosure, a radiation imaging apparatus with improved reliability can be provided. BRIEF DESCRIPTION OF DRAWINGS

[0057] Figure 1 is a (A) plan view, (B) bottom view, and (C) side view of a radiation imaging apparatus of an embodiment.

[0058] Figure 2 is a plan view of a configuration inside a housing of the radiation imaging apparatus of Figure 1

[0059] Figure 3 is a cross-sectional view along the III-III line of Figure 2

[0060] Figure 4 is a plan view of a portion of a radiation detection panel enlarged.

[0061] Figure 5 is a cross-sectional view along the V-V line of Figure 4

[0062] Figure 6 is a view showing an internal structure of a light receiving portion and an IC chip.

[0063] Figure 7 is a bottom view of a configuration inside a housing of the radiation imaging apparatus of Figure 1 ​​​​

[0064] Figure 8 FIG. 1 is a view showing a positional relationship of the heat absorbing member and the flexible substrate.

[0065] Figure 9 FIG. 2 is a view showing a structure of a heat absorbing portion and a heat radiating portion of the heat absorbing member. DETAILED DESCRIPTION

[0066] Hereinafter, an embodiment of the present disclosure will be described in detail with reference to the drawings. Furthermore, the same or corresponding elements are denoted by the same symbols in the following description, and overlapping description is omitted. In addition, in the drawings, there are exaggerated portions in order to easily explain the characteristic portions of the embodiment. Thus, the dimensional ratios of the respective portions of the drawings are sometimes different from the actual dimensional ratios.

[0067] [Overall structure of the radiation imaging apparatus]

[0068] Reference Figures 1-3 The structure of the radiation imaging apparatus 1 of an embodiment will be described. Furthermore, in the following description, the illustration of the top wall 11 and the fastening member 15 described below is omitted. Figure 2 The radiation imaging apparatus 1 is, for example, a large-area flat panel sensor (radiation imaging apparatus) used for a medical X-ray imaging system. As shown in (A) to (C) of FIG. 1, the radiation imaging apparatus 1 is composed of a substantially rectangular parallelepiped-shaped housing 10 and each member housed in the housing 10. Figure 1

[0069] The housing 10 is a substantially rectangular parallelepiped-shaped hollow container. The housing 10 has a top wall 11, a bottom wall 12, and side walls 13. The top wall 11 and the bottom wall 12 are each formed in a rectangular plate shape and are disposed apart from and opposite to each other. In the present specification, the direction in which the top wall 11 and the bottom wall 12 are opposite to each other is referred to as the Z-axis direction. In addition, of the directions orthogonal to the Z-axis direction, the direction in which the rod-shaped heat absorbing member 60 described below extends is referred to as the X-axis direction, and the direction orthogonal to the Z-axis direction and the X-axis direction is referred to as the Y-axis direction. The side walls 13 extend along the XZ plane or the YZ plane, and are formed in a rectangular ring shape so as to connect the outer edge portions of the top wall 11 and the bottom wall 12.

[0070] ​A protruding wall 14 is provided approximately at the center of the outer surface of the bottom wall 12. This protruding wall 14 is box-shaped, forming a generally cuboid space between itself and the outer surface of the bottom wall 12. The bottom wall 12 has one or more (three in this embodiment as an example) through-holes 12a communicating with a space S1 surrounded by the top wall 11, the bottom wall 12, and the side wall 13, and a space S2 surrounded by the bottom wall 12 and the protruding wall 14. For example, the space S2 may be equipped with a power supply for supplying power to the control board 50 described below, and an interface (I / F) circuit that outputs an electrical signal corresponding to the radiation detected by the sensor panel 30 (radiation detection panel) to an external PC device (e.g., a device for displaying radiation images). Furthermore, the outer surface of the protruding wall 14 is provided with a power supply disposed in the space S2, and external connection terminals (not shown) for connecting to circuits, etc.

[0071] The top wall 11 is constructed of a component that allows radiation (e.g., X-rays) from the object being detected by the radiation imaging device 1 to pass through into the interior of the housing 10. The top wall 11 guides radiation incident along the Z-axis direction to the inside of the housing 10. That is, the Z-axis direction is the incident direction of the radiation from the object being detected. In this embodiment, the top wall 11 has a two-layer structure. Figure 3 As shown, the top wall 11 includes: a carbon fiber plate 111 disposed on the side where radiation is incident (outer side); and a shielding member 112 disposed on the inner surface of the carbon fiber plate 111 for shielding electromagnetic waves. The shielding member 112 is, for example, an aluminum shielding member formed by bonding aluminum foil to the inner surface of the carbon fiber plate 111.

[0072] The bottom wall 12 and side walls 13 are formed of a metallic material (such as iron) that shields against radiation. Figure 3 As shown, the upper surface 13a of the sidewall 13 is in contact with the shielding member 112 and is conductive with the shielding member 112. This achieves shielding of electromagnetic waves from the outside of the housing 10 to the inside of the housing 10. Furthermore, as... Figure 2 and Figure 3 As shown, a plurality of threaded holes 13b are provided on the upper surface 13a of the side wall 13. The fastening member 15 is inserted through the through hole 11a provided in the top wall 11 and screwed into the threaded hole 13b. Thus, the top wall 11 is fixed to the side wall 13.

[0073] like Figure 2 and Figure 3 As shown, the radiation imaging device 1 has a support member 20 housed in a housing 10, a sensor panel 30, a plurality of (24 in one example) flexible circuit boards 40, a plurality of (6 in one example) flexible circuit boards 40A, a control board 50, a plurality of (4 in one example) heat-absorbing members 60, and a plurality of (3 in one example) radiation shielding boards 70.

[0074] The support member 20 is a member for supporting (fixing) the sensor panel 30, the control substrate 50, the radiation shielding substrate 70, and the like with respect to the case 10. In the present embodiment, the support member 20 has a base substrate 21, a radiation shielding member 22, and a support pillar 23.

[0075] The base substrate 21 has a support surface 21a that supports the sensor panel 30, and a back surface 21b on the opposite side of the support surface 21a. The base substrate 21 is composed of, for example, a metal such as iron, aluminum, stainless steel, tungsten alloy, copper tungsten, or the like. In the present embodiment, the base substrate 21 is formed of aluminum that is lighter in weight as one example. The support surface 21a is a surface that opposes the top wall 11, and the back surface 21b is a surface that opposes the bottom wall 12. The support surface 21a supports the sensor substrate 31 of the sensor panel 30. The control substrate 50 is fixed to the back surface 21b via, for example, one or more support members 55 formed in a columnar shape that extends in the Z direction.

[0076] As shown in FIG. 2, the base substrate 21 has a main body portion 21A that is formed in a rectangular shape as viewed from the Z-axis direction (first direction) orthogonal to the support surface 21a, and a protruding portion 21B that is formed at each of the corners (four corners) of the main body portion 21A and protrudes toward the outside of the main body portion 21A. In the present embodiment, the main body portion 21A is integrally formed with the protruding portion 21B as one example. Figure 2

[0077] As shown in FIG. 2, the base substrate 21 has a main body portion 21A that is formed in a rectangular shape as viewed from the Z-axis direction (first direction) orthogonal to the support surface 21a, and a protruding portion 21B that is formed at each of the corners (four corners) of the main body portion 21A and protrudes toward the outside of the main body portion 21A. In the present embodiment, the main body portion 21A is integrally formed with the protruding portion 21B as one example. Figure 2 Figure 3 As shown in FIG. 2, the base substrate 21 has a main body portion 21A that is formed in a rectangular shape as viewed from the Z-axis direction (first direction) orthogonal to the support surface 21a, and a protruding portion 21B that is formed at each of the corners (four corners) of the main body portion 21A and protrudes toward the outside of the main body portion 21A. In the present embodiment, the main body portion 21A is integrally formed with the protruding portion 21B as one example. Figure 3 ​​As shown, the depth (length in the Z-axis direction) of the recessed portion 21d is set so that the back surface 21b of the portion of the main body portion 21A in which the recessed portion 21d is not provided and the surface (the surface opposite the control substrate 50) of the radiographing shield substrate 70 are substantially flush in the case where the radiographing shield substrate 70 is disposed within the recessed portion 21d. That is, the depth of the recessed portion 21d is set to be substantially the same as the thickness (length in the Z-axis direction) of the radiographing shield substrate 70. As described above, by providing the radiographing shield substrate 70, which is divided into a plurality of pieces, in a manner that covers only a region of the back surface 21b of the main body portion 21A, and thereby focusing on covering a region of the control substrate 50 in which an electronic component that needs to be shielded from radiation is disposed, and comparing this to a case where a hard lead plate having substantially the same area as the back surface 21b is provided, the weight of the radiographing apparatus 1 can be suppressed. In addition, by providing the recessed portion 21d for housing the radiographing shield substrate 70 in the back surface 21b of the base substrate 21, the overall size (elongation in the Z-axis direction) of the radiographing apparatus 1 can be suppressed from becoming large, and the radiographing apparatus 1 can be made more compact.

[0078] The radiographing shield member 22 is formed of a material having a high X-ray shielding ability, such as lead, tungsten, or the like. In the present embodiment, as one example, the radiographing shield member 22 is formed in a band shape (plate shape) and is provided to the edge portion of the back surface 21b of the base substrate 21. As shown in FIG. 2, the radiographing shield member 22 is provided to the edge portion of the back surface 21b of the base substrate 21 so as to overlap the IC chip 42 mounted on the flexible substrate 41 described below. Figure 2 and Figure 3 As shown, a portion of the radiographing shield member 22 is exposed to the outside of the base substrate 21 in a manner so as to overlap the IC chip 42 mounted on the flexible substrate 41 described below, as viewed in the Z-axis direction. The radiographing shield member 22 can be provided for each IC chip 42, or one radiographing shield member 22 can be provided with respect to a plurality of IC chips 42 adjacent to each other (i.e., formed in a size that overlaps the plurality of IC chips 42 as viewed in the Z-axis direction). In the present embodiment, the latter structure is employed. Specifically, in each edge portion of the base substrate 21 (main body portion 21A) in the X-axis direction, four radiographing shield members 22 are provided in the X-axis direction. That is, one radiographing shield member 22 is provided so as to overlap three IC chips 42 arranged in series in the X-axis direction.

[0079] The support pillar 23 is a member that supports the base substrate 21 (protruding portion 21B) with respect to the bottom wall 12. As shown in FIG. 2, the support pillar 23 is provided to the edge portion of the base substrate 21 (main body portion 21A) in the X-axis direction. The support pillar 23 is formed of a material having a high rigidity, such as a metal or the like. The support pillar 23 is formed in a cylindrical shape, but the shape thereof is not limited thereto. Figure 3As shown, the support 23 is provided so as to extend in the Z-axis direction between the protrusion 21B and the bottom wall 12. As one example, the support 23 is formed in a quadrangular prism shape having substantially the same size as the protrusion 21B as viewed in the Z-axis direction. The support 23 can be formed of, for example, aluminum, or a metal other than aluminum such as iron, an engineering plastic such as polyoxymethylene (POM) and polyether ether ketone (PEEK), or the like. The support 23 is fixed to the protrusion 21B and the bottom wall 12 via, for example, a fixing member (not shown such as a screw or the like). In the present embodiment, the base substrate 21 is supported with respect to the bottom wall 12 by four supports 23 provided in correspondence with each of the protrusions 21B provided at the four corners of the main body portion 21A.

[0080] The sensor panel 30 has a sensor substrate 31 formed in a rectangular plate shape. The sensor substrate 31 has a first face 31a on which a light receiving portion 32 (light receiving face) is formed, and a second face 31b on the opposite side of the first face 31a. The first face 31a is a face opposite the top wall 11, and the second face 31b is a face opposite the bottom wall 12. The light receiving portion 32 is provided with a scintillator 34 thereon. The scintillator 34 is formed by vapor depositing a scintillator material having, for example, CsI as a main component on the light receiving portion 32. The scintillator 34 converts radiation that has been incident via the top wall 11 into light. Specifically, the scintillator 34 outputs scintillating light of an intensity corresponding to the intensity of the incident radiation to the light receiving portion 32. As a result, the region of the first face 31a in which the light receiving portion 32 is formed functions as a detection region R that detects radiation. The detection region R has, for example, a light receiving area of one side of about 30 cm to 40 cm (as one example, 40 cm x 30 cm).

[0081] The sensor substrate 31 is, for example, a transparent glass substrate. The sensor substrate 31 is fixed to the base substrate 21 by fixing the second face 31b of the sensor substrate 31 to the support face 21a of the base substrate 21. The second face 31b is fixed to the support face 21a via, for example, an adhesive member (not shown such as double-sided tape or the like). As viewed in the Z-axis direction, the region in which at least the light receiving portion 32 and the scintillator 34 are provided is included in the base substrate 21. In the first face 31a of the sensor substrate 31, a plurality of electrode pads 33 are formed outside the detection region R. The plurality of electrode pads 33 are electrically connected to the pixels P formed on the light receiving portion 32 via the following wiring (readout wiring and row selection wiring), or the like. m,n (Refer to Figure 4 ) In the present embodiment, as one example, 24 (12 x 2 sides) electrode pads 33 (electrode pads connected to the flexible circuit substrate 40) are formed in the edge portions of the sensor substrate 31 on the left and right as viewed in the Z-axis direction. In addition, in one edge portion of the sensor substrate 31 in the Y-axis direction (in the present embodiment, the edge portion on the left as viewed in the Y-axis direction), 12 electrode pads 33 are formed. Figure 2The edge portion on the lower side in the sensor substrate 31 is provided with six electrode pads 33 (electrode pads connected to the flexible circuit substrate 40A).

[0082] The flexible circuit substrate 40 is a circuit member electrically connected to the electrode pads 33. The flexible circuit substrate 40 has a flexible substrate 41 capable of being deformed by bending and the like, and an IC chip 42 mounted on the flexible substrate 41. As shown in Figure 2 In the present embodiment, as viewed from the Z-axis direction, a plurality of (in the present embodiment, 12 on each side) flexible circuit substrates 40 are arranged at equal intervals along the side portions on the left and right of the sensor substrate 31 in the X-axis direction. Each flexible circuit substrate 40 is connected to the corresponding electrode pad 33.

[0083] As shown in Figure 3 The flexible substrate 41 is arranged to connect the sensor panel 30 (electrode pads 33) and the control substrate 50 (connector 51) by being bent from the side of the base substrate 21 as viewed from the Z-axis direction (i.e., in a manner not interfering with the base substrate 21 and the radiation shielding member 22). The flexible substrate 41 has, for example, a configuration in which an insulator (e.g., polyimide or the like) on a thin film is provided with a circuit pattern formed by a conductor foil (e.g., copper or the like). One end portion 41a of the flexible substrate 41 is connected to the electrode pad 33 via a connection member B. The connection member B is a member that generates adhesive force by heat press bonding, and is, for example, an anisotropic conductive material such as an ACF (anisotropic conductive film), an ACP (anisotropic conductive paste), or the like. The other end portion 41b (one end) of the flexible substrate 41 is connected to the connector 51 (terminal) of the control substrate 50.

[0084] The IC chip 42 is a readout circuit (ROIC: Readout IC) that performs processing for reading out a signal from the sensor panel 30. An example of the operation of the IC chip 42 is described later.

[0085] On the side portion of the sensor substrate 31 in the Y-axis direction (lower side of the Figure 2 ), a plurality of (six in the present embodiment) flexible circuit substrates 40A are arranged at equal intervals. Each flexible circuit substrate 40A is connected to the corresponding electrode pad 33. The flexible circuit substrate 40A is formed in a different shape and size from the flexible circuit substrate 40, but has the same basic configuration as the flexible circuit substrate 40. An IC chip 42A is mounted on each flexible circuit substrate 40A. As shown in Figure 3 The end portion on the control substrate 50 side of each flexible circuit substrate 40A is connected to a connector 51A provided along the side portion of the control substrate 50 in the Y-axis direction (lower side of the Figure 2 ). Figure 7

[0086] ​The control board 50 is a circuit board disposed opposite the back surface 21b of the base board 21, and processes signals read from the sensor panel 30. The control board 50 has a connection surface 50a of a connector 51 that connects to the end 41b of the flexible substrate 41. The connection surface 50a is the surface opposite the bottom wall 12, and is the surface of the control board 50 opposite the base board 21. Figure 3 The opposite side of the upper surface of the control substrate 50.

[0087] The control board 50 includes circuitry for controlling the operation of the IC chip 42 and supplying power to the IC chip 42. In this embodiment, it is disposed in space S1 (refer to...). Figure 1 The control board 50 of (C) is connected to the space S2 (see reference) via conductive components (e.g., wiring, lead pins, etc.) inserted into the insertion hole 12a. Figure 1 The power supply, I / F circuit, and other electrical connections described above (C) are used. The control board 50 is fixed to the back surface 21b of the base board 21 via one or more support members 55. Furthermore, in this embodiment, to improve the support stability of the base board 21, a plurality of support members 56 are provided, which are inserted into through holes (not shown) provided on the control board 50, for supporting the base board 21 relative to the bottom wall 12. In addition, the control board 50 is fixed relative to the base board 21 by the support members 55 as described above, and is not supported by the support members 56.

[0088] [Operation of the radiation camera device]

[0089] Next, an example of the operation (radiation detection) of the radiation imaging device 1 will be described. In this embodiment, an amplifier chip (signal connection portion) for signal readout is formed on the IC chip 42 (ROIC) of the flexible circuit board 40 connected to the electrode pad 33 formed on the peripheral portion of the sensor substrate 31 along the X-axis direction. As an example, through... Figure 2 The IC chip 42 on the flexible circuit board 40 located on the left side of the sensor substrate 31 has a signal connection portion 42a, and the IC chip 42 on the flexible circuit board 40 located on the right side of the sensor substrate 31 has a signal connection portion 42b. Thus, in this embodiment, to reduce signal readout noise and increase speed, a structure is adopted in which the signal readout line (data line) is divided into two parts. However, such division of the signal readout line is not necessary. The same applies to data lines involved in other signal control. On the other hand, at the edge of the sensor substrate 31 formed along the Y-axis direction (… Figure 2 The flexible circuit board 40A of the electrode pad 33 (below) has an IC chip 42A with a vertical shift register (vertical scan circuit) 42c.

[0090] Reference Figures 4-6 An example of the operation of the radiation imaging device 1 will be explained. For example... Figure 4 As shown, the light-receiving part 32 is constructed by arranging M×N pixels in a two-dimensional pattern of M rows and N columns. Pixel P m,n It is the pixel located in the m-th row and n-th column. Here, m is an integer greater than 1 and less than M, and n is an integer greater than 1 and less than N. Furthermore, in Figure 4 In the image, the column direction is aligned with the X-axis, and the row direction is aligned with the Y-axis. The light-receiving unit 32 contains multiple pixels P. 1,1 ~P M，N Each device includes a photodiode (PD) and a readout switch (SW1). A bias voltage is applied to the anode terminal of the photodiode (PD), and one end (a current terminal) of the readout switch (SW1) is connected to the cathode terminal of the photodiode (PD). The other end (another current terminal) of the readout switch (SW1) is connected to the corresponding readout wiring (e.g., pixel P). m,n In the case of reading the nth column using wiring L O,n The control terminal of switch SW1 is connected to the corresponding row selection wiring (e.g., pixel P). m,n In this case, the m-th row is selected using wiring L. V,m ).

[0091] like Figure 5 As shown, a silicon film 35 is provided on the entire surface of the first surface 31a of the sensor substrate 31. Then, a photodiode PD, a readout switch SW1, and the nth column readout wiring L are also provided. O,n Formed on the surface of the silicon film 35. Photodiode PD, readout switch SW1, and nth column readout wiring L. O,n It is covered by an insulating layer 36. Above the insulating layer 36, a scintillator 34 is configured to cover the entire detection area R of the first surface 31a of the sensor substrate 31. The photodiode PD is configured, for example, to contain amorphous silicon.

[0092] The photodiode PD of this embodiment has an n-type semiconductor layer 91 made of n-type polysilicon, an i-type semiconductor layer 92 made of i-type amorphous silicon provided on the n-type semiconductor layer 91, and a p-type semiconductor layer 93 made of p-type amorphous silicon provided on the i-type semiconductor layer 92. In addition, the readout switch SW1 is a thin film transistor (TFT) formed of polysilicon, and has a structure as a field effect transistor (FET). That is, the readout switch SW1 has a channel region 94, a source region 95 arranged along one side of the channel region 94, a drain region 96 arranged along the other side of the channel region 94, and a gate insulating film 97 and a gate electrode 98 formed on the channel region 94. The nthcolumn readout wiring L O,n is made of metal. The scintillator 34 generates scintillation light according to incident radiation, converts a radiation image into a light image, and outputs the light image to the light receiving section 32.

[0093] In Figure 6 , 4 x 4 pixels 100 are shown, and represent M x N pixels P m,n (m = 1,..., M, n = 1,..., N). Each of the pixels 100 is configured to include a photodiode PD and a readout switch SW1. The photodiode PD generates an amount of electric charge corresponding to the intensity of incident light, and accumulates the generated electric charge in a junction capacitor section. As described above, the readout switch SW1 is connected to a row selection wiring L V corresponding to the mthrow of pixels P m,n . Here, the row selection wiring L V corresponding to the mthrow of pixels P V,m is the mthrow selection wiring L V described above. The M row selection wirings L V are connected to vertical shift registers 42c. Each of the vertical shift registers 42c generates a row selection signal for controlling the on / off state of the readout switch SW1 for each row, and supplies the row selection signal to the row selection wiring L V for each row.

[0094] When the row selection signal output from the vertical shift register 42c to the row selection wiring L V is an inactive value (e.g., a low level), the readout switch SW1 is turned off. At this time, the electric charge generated by the photodiode PD is accumulated in the junction capacitor section, and is not output to the corresponding column readout wiring L O . Here, the column readout wiring L m,n corresponding to the nthcolumn of pixels P O . Here, the column readout wiring L O,nOn the other hand, when the row selection signal is an active value (e.g., a high level), the read switch SW1 is closed. At this time, the charge generated by the photodiode PD and accumulated in the junction capacitor section is output to the corresponding read wire L O via the read switch SW1. The output charge is sent to the integration circuit 101 via the read wire L O In the present embodiment, the read switch SW1 of the pixel 100 in the row located on the upper edge side of the sensor substrate 31 among the pixels 100 formed in the light receiving section 32 is connected to the signal connection section 42a of the integration circuit 101. On the other hand, the read switch SW1 of the pixel 100 in the row located on the lower edge side of the sensor substrate 31 among the pixels 100 formed in the light receiving section 32 is connected to the signal connection section 42b of the integration circuit 101. O In the present embodiment, the read switch SW1 of the pixel 100 in the row located on the upper edge side of the sensor substrate 31 among the pixels 100 formed in the light receiving section 32 is connected to the signal connection section 42a of the integration circuit 101. On the other hand, the read switch SW1 of the pixel 100 in the row located on the lower edge side of the sensor substrate 31 among the pixels 100 formed in the light receiving section 32 is connected to the signal connection section 42b of the integration circuit 101. O In the present embodiment, the read switch SW1 of the pixel 100 in the row located on the upper edge side of the sensor substrate 31 among the pixels 100 formed in the light receiving section 32 is connected to the signal connection section 42a of the integration circuit 101. On the other hand, the read switch SW1 of the pixel 100 in the row located on the lower edge side of the sensor substrate 31 among the pixels 100 formed in the light receiving section 32 is connected to the signal connection section 42b of the integration circuit 101. Furthermore, the division method of the row on the upper edge side and the row on the lower edge side of the sensor substrate 31 is arbitrary. For example, in a case where the number of rows on the upper edge side of the sensor substrate 31 is set to N1 and the number of rows on the lower edge side of the sensor substrate 31 is set to N2, any one of "N1=N2", "N1>N2", and "N1

[0095] The integration circuit 101 has a so-called charge integration type structure including an amplifier 101a, a capacitor element 101b, and a discharge switch 101c. The capacitor element 101b and the discharge switch 101c are connected in parallel to each other and between the input terminal and the output terminal of the amplifier 101a. The input terminal of the amplifier 101a is connected to the column read wire L O The discharge switch 101c is provided with a reset control signal RE. The reset control signal RE is supplied from the signal processing circuit 40 via the reset wire L R The reset control signal RE is supplied from the signal processing circuit 40 via the reset wire L

[0096] The reset control signal RE indicates the opening and closing operation of the discharge switch 101c of each of the N integration circuits 101. For example, when the reset control signal RE is a non-active value (e.g., a high level), the discharge switch 101c is closed, the capacitor element 101b is discharged, and the output voltage value of the integration circuit 101 is initialized. In addition, when the reset control signal RE is an active value (e.g., a low level), the discharge switch 101c is opened, the charge input to the integration circuit 101 is accumulated in the capacitor element 101b, and a voltage value corresponding to the amount of the accumulated charge is output from the integration circuit 101.

[0097] The signal connection portions 42a and 42b each further have N holding circuits 102 and a horizontal shift register 103. Each holding circuit 102 includes an input switch 102a, an output switch 102b, and a voltage holding portion 102c. One end of the voltage holding portion 102c is connected to the output terminal of the integration circuit 101 via the input switch 102a, and the other end of the voltage holding portion 102c is connected to a voltage output wiring L OUT via the output switch 102b. H A hold control signal Hd is applied to the input switch 102a via a holding wiring L OUT . The hold control signal Hd indicates the opening and closing operation of the input switch 102a of each of the N holding circuits 102. To the output switch 102b of the holding circuit 102, a column selection signal is applied from the horizontal shift register 103. The column selection signal indicates the opening and closing operation of the output switch 102b of the holding circuit 102 of the corresponding column.

[0098] When the hold control signal Hd transitions from the high level to the low level, the input switch 102a transitions from the closed state to the open state, and at this time, the voltage value input to the holding circuit 102 is held in the voltage holding portion 102c. Thereafter, when the column selection signal from the horizontal shift register 103 transitions from the low level to the high level in order for each column, the output switch 102b is closed in order, and the voltage value held in the voltage holding portion 102c is output to the voltage output wiring L OUT in order for each column.

[0099] [Structure of heat absorbing member]

[0100] Next, the structure of the heat absorbing member 60 is described in more detail with reference to Figure 3 and Figures 7-9 . Figure 7 is a view of the configuration inside the case 10 as viewed from the side opposite to the lower surface (connection surface 50a) of the control substrate 50. Further, in Figure 7 , the illustration of the plurality of flexible circuit substrates 40 arranged in the X-axis direction in the edge portion of the side (right side of Figure 7 ) of the control substrate 50 in the Y-axis direction is omitted. That is, Figure 7 the right side portion shows the state before the flexible circuit substrate 40 is mounted. For the flexible substrate 41 illustrated at the left end of Figure 8 , the state in which the end portion 41b is detached from the connector 51 and extends toward the outside in the Y-axis direction is shown. Figure 9 is a view of the heat absorbing member 60 arranged between the support member 20 (radiation shielding member 22) and the IC chip 42 mounted on each flexible substrate 41 as viewed from the side (Y-axis direction).

[0101] The heat absorbing member 60 is provided between the support member 20 and the IC chip 42 on the side opposite to the side on which the sensor panel 30 is located with respect to the support member 20 (the base substrate 21 and the radiation shielding member 22), and absorbs heat from the IC chip 42. The heat absorbing member 60 is formed in a rod shape extending in the X-axis direction. The heat absorbing member 60 is configured of a plurality of sheet members stacked in the Z-axis direction. As one example, the heat absorbing member 60 is formed by overlapping and pressure bonding or fusion bonding seven sheet members each having a thickness of 1 mm. The material configuring the heat absorbing member 60 is, for example, acrylic, silicon, ceramic, or the like.

[0102] In the present embodiment, the heat absorbing member 60 is provided between the IC chip 42 mounted on each flexible substrate 41 and the radiation shielding member 22. In addition, in the example of Figure 3 the heat absorbing member 60 is configured to overlap with the portion of the radiation shielding member 22 that protrudes to the outside of the end portion 21c of the base substrate 21 in the Y-axis direction. That is, in the Z-axis direction, the heat absorbing member 60 does not overlap with the base substrate 21. However, the configuration structure of the heat absorbing member 60 is not limited to the above structure. For example, at least a portion of the heat absorbing member 60 can be configured to overlap with both the radiation shielding member 22 and the base substrate 21. In addition, for example, the base substrate 21 itself is formed of a radiation shielding material, and in the case where the radiation shielding member 22 is omitted or the like, the heat absorbing member 60 can be provided between the base substrate 21 and the IC chip 42.

[0103] As shown in FIG. 1, the radiation imaging apparatus 1 has the heat absorbing member 60 provided between the radiation shielding member 22 and the IC chip 42 mounted on each flexible substrate 41. Figure 7 As shown in FIG. 1, the radiation imaging apparatus 1 has the heat absorbing member 60 provided between the radiation shielding member 22 and the IC chip 42 mounted on each flexible substrate 41. Figure 7As shown on the right side, a heat-absorbing member 60 is positioned across two radiation-shielding members 22 arranged in the X-axis direction, and is sandwiched between the IC chip 42 on the six flexible substrates 41 and the two radiation-shielding members 22. Furthermore, the heat-absorbing member 60 can be fixed to the radiation-shielding members 22 using double-sided tape or the like, or it can be left unfixed. Even when the heat-absorbing member 60 is not fixed, as described later, it is held and fixed by the flexible substrates 41 and the radiation-shielding members 22. By fixing the heat-absorbing member 60 to the radiation-shielding members 22, positional displacement of the heat-absorbing member 60 can be suppressed. On the other hand, by not fixing the heat-absorbing member 60 to the radiation-shielding members 22, replacement of the heat-absorbing member 60 and the radiation-shielding members 22 is easier.

[0104] like Figure 8 and Figure 9 As shown, the heat-absorbing member 60 has a heat-absorbing part 61 and a heat-dissipating part 62.

[0105] The heat-absorbing portion 61 is the part disposed in the region overlapping with the flexible substrate 41 when viewed from the Z-axis direction (i.e., the portion held between the flexible substrate 41 and the radiation shielding member 22). The heat-absorbing portion 61 has a contact surface 61a that contacts the surface 422 of the IC chip 42 opposite to the mounting surface 421 of the flexible substrate 41. Figure 8 As shown, as an example, the IC chip 42 is disposed at the center of the flexible substrate 41 in the width direction (X-axis direction) and has a rectangular plate shape. Furthermore, the width W1 of the contact surface 61a along the Y-axis direction is set to be the same as or greater than the width W2 of the IC chip 42 along the Y-axis direction. Thus, the entire surface 422 of the IC chip 42 is in contact with the contact surface 61a.

[0106] The heat dissipation portion 62 is connected to the heat absorption portion 61 and, when viewed from the Z-axis direction, extends to the outer side of the flexible substrate 41 in the X-axis direction (third direction), which intersects the extending direction (second direction, Y-axis direction) of the flexible substrate 41. In this embodiment, as described above, since the heat absorption member 60 is formed as a rod extending along the X-axis direction, the heat dissipation portion 62 is integrally (continuously) formed using the same member (material) as the heat absorption portion 61. Furthermore, as in this embodiment, when one heat absorption member 60 is formed across multiple flexible substrates 41, the heat dissipation portion 62 disposed between two heat absorption portions 61 located on flexible substrates 41 adjacent to each other in the X-axis direction is shared by the two heat absorption portions 61. For example, considering the relationship with... Figure 9In the case where a heat-absorbing portion 61 is provided corresponding to the flexible substrate 41 in the central part, the heat-dissipating portion 62 corresponding to the heat-absorbing portion 61 is a portion of the heat-absorbing member 60 included in regions A1 and A2 on both sides of the heat-absorbing portion 61. In this case, the heat-dissipating portion 62 corresponding to region A1 is formed by... Figure 9 The heat-absorbing portion 61 correspondingly disposed on the flexible substrate 41 in the central part and the portion with Figure 9 The heat-absorbing portion 61 correspondingly disposed on the flexible substrate 41 at the left end is common. Similarly, the heat dissipation portion 62 corresponding to region A2 is composed of... Figure 9 The heat-absorbing portion 61 correspondingly disposed on the flexible substrate 41 in the central part and the portion with Figure 9 The heat-absorbing part 61 is provided correspondingly on the flexible substrate 41 at the right end.

[0107] like Figure 9 As shown, the thickness T2 of the heat dissipation portion 62 in the Z-axis direction is greater than the thickness T1 of the heat absorption portion 61 in the Z-axis direction. Furthermore, as... Figure 3 As shown, the thickness T2 of the heat dissipation portion 62 varies depending on its position in the X-axis direction. For example, as in this embodiment, when the heat-absorbing portion 61 is compressed in the Z-axis direction by the flexible substrate 41 and the radiation shielding member 22, there is a tendency for the thickness T2 to be greater in the portion of the heat dissipation portion 62 that is further away from the heat-absorbing portion 61 in the X-axis direction. Therefore, the "thickness T2 of the heat dissipation portion 62" when determining whether the above-mentioned relationship "T2>T1" of thicknesses T1 and T2 is satisfied refers to the average thickness of the entire area of ​​the heat dissipation portion 62 in the X-axis direction.

[0108] In addition, such as Figure 3 As shown, the thickness T1 of the heat-absorbing portion 61 may vary depending on its position in the Y-axis direction. Consequently, the thickness T2 of the heat-dissipating portion 62 adjacent to the heat-absorbing portion 61 may also vary depending on its position in the Y-axis direction. In this case, "the thickness T2 of the heat-dissipating portion 62 in the Z-axis direction is greater than the thickness T1 of the heat-absorbing portion 61 in the Z-axis direction" means that "T2>T1" holds true at any position in the Y-axis direction. Furthermore, since the thickness T1 of the heat-absorbing portion 61 is pressed in by the flexible substrate 41, it is assumed that it will not change significantly depending on its position in the X-axis direction. However, if the thickness T1 changes significantly depending on its position in the X-axis direction, the "thickness T1 of the heat-absorbing portion 61" used to determine whether the above-mentioned relationship "T2>T1" is satisfied refers to the average thickness of the entire region of the heat-absorbing portion 61 in the X-axis direction.

[0109] Further, from the viewpoint of sufficiently ensuring the thickness T2 of the heat radiating portion 62 to improve the heat radiating property of the heat radiating portion 62, the thickness T2 of the heat radiating portion 62 is preferably greater than the average of the thicknesses of the entire region of the heat absorbing portion 61 (i.e., the portion of the heat absorbing member 60 that overlaps the flexible substrate 41 in the Z-axis direction), more preferably greater than the average of the thicknesses of the portions of the heat absorbing portion 61 other than the region overlapping the IC chip 42 (i.e., the region that is likely to be deformed in a manner that the thickness becomes smaller than other portions due to being pressed against the IC chip 42), and further preferably greater than the thickness of the thickest portion of the heat absorbing portion 61.

[0110] [Effects]

[0111] In the radiation imaging apparatus 1 described above, the heat absorbing member 60 has the heat absorbing portion 61 configured to overlap the flexible substrate 41 and efficiently absorb heat from the IC chip 42 via the contact surface 61a, and the heat radiating portion 62 formed to extend to the outside of the heat absorbing portion 61 in the X-axis direction. By providing the heat radiating portion 62 in addition to the heat absorbing portion 61, and providing the heat radiating portion 62 having a thickness greater than the heat absorbing portion 61 at a position not overlapping the flexible substrate 41 in the Z-axis direction, the volume and the heat capacity of the entire heat absorbing member 60 can be effectively increased, and the surface area of the portion in contact with air in the heat radiating portion 62 can be appropriately ensured. Thus, the heat absorbing member 60 can efficiently absorb heat from the IC chip 42, and can appropriately release heat to air from the heat radiating portion 62. That is, heat can be efficiently released in the path of "IC chip 42 → heat absorbing portion 61 → heat radiating portion 62 → air (space S1 inside the housing 10)". As a result, movement of heat from the heat absorbing member 60 to the support member 20, i.e., movement of heat from the heat absorbing member 60 to the sensor panel 30 via the support member 20 (in this embodiment, the radiation shielding member 22 and the base substrate 21), can be suppressed, and thus generation of noise in the sensor panel 30 (light receiving portion 32) due to the heat can be suppressed. Therefore, according to the radiation imaging apparatus 1, deterioration of the quality of a radiation image due to the above-described noise, and the like, is suppressed, and thus reliability can be improved.

[0112] In addition, the heat absorbing member 60 itself does not have adhesiveness, and is not at least adhered to the flexible substrate 41 and the IC chip 42. That is, the contact surface 61a of the heat absorbing portion 61 is not adhered and fixed to the surface 422 of the IC chip 42 or the like. Therefore, since the flexible substrate 41 and the IC chip 42 are not adhered and fixed to the support member 20 via the heat absorbing member 60, replacement work of the flexible substrate 41 and the IC chip 42 can be easily performed when performing maintenance (repair) of the radiation imaging apparatus 1 or the like.

[0113] Furthermore, the heat-absorbing member 60 is composed of multiple (seven in this embodiment) sheet members stacked in the Z-axis direction. According to the above structure, by adjusting the number of sheet members (layers) constituting the heat-absorbing member 60, for example, based on the viewpoint of efficiently moving heat from the IC chip 42 to the heat-absorbing member 60, the thickness of the heat-absorbing member 60 in the Z-axis direction can be easily adjusted such that the contact surface 61a of the heat-absorbing portion 61 is pressed against the surface 422 of the IC chip 42 with appropriate strength. Additionally, according to the above structure, because the side surface of the heat-absorbing member 60 (the side surface intersecting the X-axis or Y-axis direction) is not completely flat (for example, some sheet members protrude slightly in the X-axis or Y-axis direction than adjacent sheet members), the effect of increasing the contact area between the heat-absorbing member 60 and the air, and improving heat dissipation, is also achieved.

[0114] In addition, such as Figure 3 As shown, when viewed from the Z-axis direction, the heat-absorbing member 60 is disposed outside the detection area R (effective light-receiving area). That is, the heat-absorbing member 60, which absorbs heat from the IC chip 42, is separated from the detection area R to a degree that it does not overlap at least in the Z-axis direction. According to the above structure, since the influence of the heat absorbed by the heat-absorbing member 60 on the detection area R can be further reduced more effectively, the generation of heat-induced noise in the sensor panel 30 (light-receiving part 32) can be further suppressed more effectively.

[0115] Furthermore, the thickness of the heat-absorbing member 60 in the Z-axis direction is set to be approximately uniform across the entire area of ​​the heat-absorbing member 60 in the X-axis direction under its natural state. Here, "natural state" refers to a state where the heat-absorbing member 60 is not clamped by the flexible substrate 41 (IC chip 42) and the support member 20 (radiation shielding member 22), and no force attempting to compress it in the Z-axis direction is applied to the heat-absorbing member 60. Additionally, as... Figure 9 and Figure 3As shown, the heat absorbing portion 61 is configured to be sandwiched by the flexible substrate 41 (IC chip 42) and the support member 20 (radiation shielding member 22) and compressed in the Z-axis direction. That is, the relationship "T2>T1" between the thickness T2 of the heat radiating portion 62 and the thickness T1 of the heat absorbing portion 61 is achieved by the force that compresses the heat absorbing portion 61 in the Z-axis direction. For example, by adjusting the length of the end portion 41a to the end portion 41b of the flexible substrate 41, the position at which the end portion 41a or the end portion 41b is connected to the opposing member (electrode pad 33, connector 51, etc.), the thickness of the heat absorbing member 60 (for example, the thickness of the sheet member that configures the heat absorbing member 60, the number of sheets, etc.), and the like, the heat absorbing portion 61 can be configured to be compressed in the Z-axis direction as described above. That is, by being configured such that the portion (i.e., the heat absorbing portion 61) of the heat absorbing member 60 that is disposed between the flexible substrate 41 and the support member 20 is compressed in the Z-axis direction by the force, the heat absorbing portion 61 and the heat radiating portion 62 can be easily formed in a manner that satisfies the above-described relationship "T2>T1" between the thicknesses T1, T2. In addition, by applying the pressure to the heat absorbing portion 61 in this way, the IC chip 42 is brought into contact with the heat absorbing portion 61, so that, for example, in the case where an impact is applied from the outside to the heat absorbing member 60, it is difficult to release the contact between the heat absorbing portion 61 and the IC chip 42. In addition, by pressing the heat absorbing portion 61 against the surface 422 of the IC chip 42, the heat absorbing portion 61 can be pressed into the space opposite the side surface of the IC chip 42, so that the efficiency of the heat absorbing portion 61 in absorbing heat from the IC chip 42 can be improved.

[0116] In addition, as shown in FIG. 6, the heat absorbing member 60 is configured to be in contact with the IC chip 42. That is, the width of the heat absorbing portion 61 in the Y-axis direction is set to overlap the surface 422 of the IC chip 42. According to the above-described structure, the heat generated by the IC chip 42 can be efficiently absorbed by the heat absorbing member 60 (heat absorbing portion 61). As a result, the deterioration of the characteristics of the IC chip 42 due to heat can be suppressed. In addition, the heat generated by the IC chip 42 can be efficiently dissipated to the outside of the radiation shielding member 22 via the heat radiating portion 62. Figure 8 and Figure 3 As shown in FIG. 6, a capacitor C (a plurality of capacitors C in the present embodiment) is provided in the flexible substrate 41 between the end portion 41b connected to the connector 51 of the control substrate 50 and the region on which the IC chip 42 is mounted. Figure 3 As shown in FIG. 6, the heat absorbing member 60 (heat absorbing portion 61) is configured not to be in contact with the capacitor C. That is, the width of the heat absorbing portion 61 in the Y-axis direction is set to overlap the surface 422 of the IC chip 42, and on the other hand, not to overlap the capacitor C. According to the above-described structure, the heat generated by the IC chip 42 can be suppressed from being transmitted to the capacitor C via the heat absorbing member 60 (heat absorbing portion 61). As a result, the deterioration of the characteristics of the capacitor C due to heat can be suppressed. In addition, the generation of damage or peeling of the capacitor C due to the contact of the heat absorbing member 60 with the capacitor C can also be suppressed.

[0117] In addition, as shown in FIG. 6, the heat absorbing member 60 is configured to be in contact with the IC chip 42. That is, the width of the heat absorbing portion 61 in the Y-axis direction is set to overlap the surface 422 of the IC chip 42. According to the above-described structure, the heat generated by the IC chip 42 can be efficiently absorbed by the heat absorbing member 60 (heat absorbing portion 61). As a result, the deterioration of the characteristics of the IC chip 42 due to heat can be suppressed. In addition, the heat generated by the IC chip 42 can be efficiently dissipated to the outside of the radiation shielding member 22 via the heat radiating portion 62. Figure 3As shown, the inner end 61a1 of the contact surface 61a of the heat-absorbing portion 61, which is closest to the control substrate 50, is located further away from the back surface 21b in the Z-axis direction than the connection surface 50a of the control substrate 50. That is, when viewed from the X-axis direction, the inner end 61a1 of the contact surface 61a, which is closest to the control substrate 50 in the Y-axis direction, is located closer to the bottom wall 12 than the connection surface 50a. As a result, the capacitor C is configured not to contact the control substrate 50 (connection surface 50a). In other words, by distributing the heat-absorbing member 60 (heat-absorbing portion 61) configured as described above between the support member 20 (radiation shielding member 22) and the IC chip 42, the portion between the end 41b of the flexible substrate 41 and the area where the IC chip 42 is mounted (i.e., the portion where the capacitor C is disposed) can be separated from the connection surface 50a of the control substrate 50. This prevents the capacitor C from contacting and being damaged by the control substrate 50. Furthermore, for example, consider the case where the control substrate 50 is positioned above the base substrate 21 (i.e., the heat-absorbing member 60 can be mounted on the radiation shielding member 22), and the end 41b of the flexible substrate 41 is connected to the connector 51. In this case, since the inner end 61a1 is positioned above the connection surface 50a, the portion of the flexible substrate 41 in which the capacitor C is disposed floats above the connection surface 50a. Therefore, according to the above structure, even during the manufacture of the radiation imaging device 1 (i.e., when the end 41b of the flexible substrate 41 is connected to the connector 51), contact between the capacitor C and the control substrate 50 can be appropriately prevented.

[0118] In addition, such as Figure 3 As shown, when viewed from the X-axis direction, the contact surface 61a of the heat-absorbing portion 61 is inclined in a manner that it approaches the control substrate 50 along the Y-axis direction and moves away from the back surface 21b along the Z-axis direction (i.e., it approaches the bottom wall 12). This inclined structure of the contact surface 61a is formed for example, based on the following reason. When the heat-absorbing portion 61 is pressed by the flexible substrate 41 and the radiation shielding member 22, the outermost part of the contact surface 61a of the heat-absorbing portion 61 (the part farthest from the control substrate 50) exerts a greater force on the side attempting to press into the radiation shielding member 22. As a result, the inclined shape described above is formed. According to the above structure, the risk of the portion of the flexible substrate 41 closest to the control substrate 50 (the inner end 61a1) coming into contact with the connection surface 50a of the control substrate 50 (or the risk of a part of the flexible substrate 41 being pressed against the edge of the connection surface 50a of the control substrate 50 by a strong force) can be reduced. Furthermore, in cases where the inner end 61a1 is configured to be located closer to the bottom wall 12 than the connecting surface 50a, to avoid contact between the capacitor C and the control substrate 50 as described above, the contact surface 61a is made as... Figure 3 The tilt shown can shorten the overall length of the flexible substrate 41.

[0119] Furthermore, in this embodiment, the heat-absorbing member 60 is disposed between the radiation-shielding member 22 and the IC chip 42. According to the above structure, the radiation-shielding member 22 can be positioned between the base substrate 21 supporting the sensor panel 30 and the heat-absorbing member 60. As a result, heat transfer from the heat-absorbing member 60 to the base substrate 21, and further to the sensor panel 30 (light-receiving portion 32), can be more effectively suppressed.

[0120] Furthermore, when the heat-absorbing member 60 is positioned in contact with the radiation shielding member 22 as described above, it is preferable that the heat capacity of the heat-absorbing member 60 is greater than that of the radiation shielding member 22. According to this structure, even when the radiation shielding member 22 is formed of a material with excellent thermal conductivity such as copper-tungsten, the heat capacity difference described above can effectively suppress the movement of heat from the heat-absorbing member 60 to the radiation shielding member 22. This further effectively suppresses the transfer of heat from the heat-absorbing member 60 to the sensor panel 30 via the support member 20 (radiation shielding member 22 and base substrate 21).

[0121] Furthermore, when viewed from the Z-axis direction, the radiation shielding member 22 is positioned at a location overlapping with or slightly outward from the outer edge 50b of the control substrate 50. In this embodiment, as... Figure 8 As shown, in the Z-axis direction, the inner end of the radiation shielding member 22 overlaps with the outer edge 50b. Additionally, as... Figure 2 As shown, the range R1 of the heat-absorbing member 60 disposed in the Y-axis direction includes the range R2 of the radiation-shielding member 22 disposed in the Y-axis direction. According to the above structure, interference (contact) between the heat-absorbing member 60 and the control substrate 50 can be suitably suppressed. Furthermore, the above effect is further enhanced by displacing the inner end of the radiation-shielding member 22 further outward than the outer edge 50b. This simplifies assembly operations (e.g., connecting the end 41b of the flexible substrate 41 to the connector 51 of the control substrate 50) and suppresses the transfer of heat generated by the IC chip 42 to the control substrate 50 via the heat-absorbing member 60.

[0122] In addition, such as Figure 7 and Figure 7 As shown, the radiation imaging device 1 includes a plurality of flexible substrates 41 arranged along the X-axis, each on which an IC chip 42 is mounted. Additionally, a heat-absorbing member 60 extends along the X-axis corresponding to the plurality of (six in this embodiment) flexible substrates 41. That is, in this embodiment, as... Figure 3As shown, two (total four) heat absorbing members 60 are provided on both side edge portions of the control substrate 50 in the Y-axis direction. According to the above-described structure, by providing one heat absorbing member 60 that is long in the X-axis direction with respect to a plurality of (as one example, six) IC chips 42 (flexible substrate 41) arranged in the X-axis direction, the volume and heat capacity of one heat absorbing member 60 can be further effectively increased. Thereby, movement of heat from the heat absorbing member 60 to the support member 20, that is, movement of heat from the heat absorbing member 60 to the sensor panel 30 via the support member 20, can be further effectively suppressed. In addition, compared to a case in which the heat absorbing member 60 is provided individually for each IC chip 42, the number of components of the heat absorbing member 60 can be reduced, and mounting work of the heat absorbing member 60 can be facilitated. In addition, in a case in which the heat absorbing member 60 is fixed to the support member 20 (in the present embodiment, the radiation shielding member 22) by adhesion or the like, the stability of the fixation of the heat absorbing member 60 can also be improved.

[0123] [Modified Example]

[0124] The present disclosure is not limited to the above-described embodiments. The materials and shapes of the above-described structures are not limited to the above-described materials and shapes, and various materials and shapes can be employed. In addition, the structures of a portion of the radiation imaging apparatus 1 of the above-described embodiments can be appropriately omitted or changed. For example, in the above-described embodiments, a number of characteristic structures included in the radiation imaging apparatus 1 and a number of effects exerted by each structure are described, but the radiation imaging apparatus of the present disclosure does not necessarily need to be configured to exert all of the effects described in the above-described embodiments, and can be configured to exert only a portion of the effects described in the above-described embodiments. In the latter case, the radiation imaging apparatus can have at least the structures necessary to exert the effects of the portion, and the structures that are not necessary to exert the effects of the portion can be appropriately omitted or changed. Furthermore, in a case in which one effect is focused on, the structures necessary to exert the one effect should be reasonably grasped on the basis of technical common sense and the description of the present specification by a person skilled in the art. Hereinafter, a number of specific modified examples of the radiation imaging apparatus of the present disclosure are exemplified, but the modified examples of the radiation imaging apparatus are of course not limited only to the specific modes exemplified below.

[0125] In the above-described embodiments, the heat absorbing member 60 is provided only to the ROIC (IC chip 42), but can be provided with respect to an IC chip other than the above-described (for example, the IC chip 42A that constitutes the vertical shift register in the above-described embodiments). In addition, for example, the heat absorbing member 60 can be provided only with respect to the IC chip 42A.

[0126] In the above-described embodiment, the detection region R is a region in which an indirect conversion method is applied, the indirect conversion method obtaining an image by capturing a light image after converting a radiation image into a light image by the scintillator 34, but the detection region R can also be a region in which a direct conversion method of directly capturing a radiation image to obtain an image is applied. For example, in the first surface 31a of the sensor substrate 31, a pixel circuit configured to perform accumulation and transfer of charges is provided instead of the light receiving section 32, and a solid material (conversion section) that directly converts radiation into charges (for example, CdTe, CdZnTe, GaAs, InP, TlBr, HgI2, PbI2, Si, Ge, and a-Se, etc.) is provided instead of the scintillator 34. Thereby, the detection region R in which the direct conversion method is applied is obtained. The detection region R in this case is a region in which radiation is incident, and is a region to which a bias is applied (i.e., a region that becomes a target to acquire an image).

[0127] In the above-described embodiment, the sensor panel 30 in which polycrystalline silicon or amorphous silicon, etc. is formed on the sensor substrate 31 that is a glass substrate is described, but the sensor panel 30 is not limited to the above-described structure, and can have a structure in which a light receiving section is formed on, for example, a single-crystal silicon substrate. In addition, the sensor substrate 31 is not limited to a glass substrate, and can be, for example, a film-shaped substrate (flexible substrate), etc.

[0128] In addition, the sensor panel 30 can also be provided with a cover member (for example, aluminum, etc.) that covers the scintillator 34. In addition, the sensor substrate 31 is adhered to the base substrate 21 by a double-sided tape, etc., but for example, when the warping stress of the sensor substrate 31 is greater than the adhesive force of the double-sided tape in a high-temperature high-humidity environment, there is a concern that the sensor panel 30 will lift up from the base substrate 21 (move toward the top wall 11). In order to prevent such lifting up of the sensor panel 30, a member (for example, urethane sponge, etc.) that applies a force to the sensor panel 30 in a direction in which the above-described lifting up is suppressed when the above-described lifting up occurs can be disposed between the sensor panel 30 and the top wall 11.

[0129] In addition, in the above-described embodiment, the IC chip 42 is disposed on the surface (upper surface) of the flexible substrate 41 on the side of the base substrate 21 (top wall 11) in the flexible substrate 41. Figure 3 However, the IC chip 42 can also be disposed on the surface (lower surface) of the flexible substrate 41 on the side opposite to the side of the base substrate 21 (top wall 11) in the flexible substrate 41. ​the lower surface of the IC chip 42). In this case, the capacitor C is also provided on the side opposite to the base substrate 21 (top wall 11) side (bottom wall 12 side) of the flexible substrate 41 as with the IC chip 42. In the above modification example, the heat absorbing member 60 (heat absorbing portion 61) does not directly contact the IC chip 42, but can absorb heat generated from the IC chip 42 via the portion of the flexible substrate 41 in which the IC chip 42 is provided. Thus, the same effects as the above-described radiation imaging apparatus 1 are also achieved by the above modification example (i.e., the effect of enabling the heat absorbing member 60 to efficiently absorb heat from the IC chip 42 and the effect of enabling the heat releasing portion 62 to appropriately release heat to the air). Further, in the above modification example, the heat absorbing portion 61 can be defined as "a heat absorbing portion that, when viewed in the Z-axis direction (first direction), is disposed in a region overlapping the flexible substrate 41, and includes a portion overlapping the mounting surface 421 of the IC chip 42 in the Z-axis direction". In addition, the IC chip 42 is disposed on the side opposite to the side on which the heat absorbing portion 61 is located with respect to the flexible substrate 41. Further, the thickness T1 of the heat absorbing portion 61 in the above modification example can be defined as with the above embodiment.

[0130] Explanation of Symbols

[0131] 1...radiation imaging apparatus, 20...support member, 21...base substrate, 21a...support surface, 21b...back surface, 22...radiation shielding member, 30...sensor panel, 41...flexible substrate, 41b...end portion (one end), 42, 42A...IC chip, 50...control substrate, 50a...connection surface, 50b...outer edge portion, 51...connector (terminal), 60...heat absorbing member, 61...heat absorbing portion, 61a...contact surface, 61a1...inner end portion, 62...heat releasing portion, 421...mounting surface, C...capacitor, R...detection region.

Claims

1. A radiation imaging device, wherein, Include: The sensor panel has a detection area for detecting radiation. A support member having a support surface for supporting the sensor panel and a back surface opposite to the support surface; A control board, which is positioned opposite the back side of the support member, processes signals read from the sensor panel; A flexible substrate configured to connect the sensor panel and the control substrate laterally via the support member when viewed from a first direction orthogonal to the support surface; An IC chip, mounted on the flexible substrate, performs processing for reading the signal from the sensor panel; and A heat-absorbing component, disposed on the side opposite to the support member and the sensor panel, is located between the support member and the IC chip to absorb heat from the IC chip. The heat-absorbing component has: The heat-absorbing portion, when viewed from the first direction, is disposed in the region overlapping with the flexible substrate and has a contact surface that contacts the surface of the IC chip opposite to the mounting surface of the flexible substrate. and The heat dissipation portion, which is connected to the heat absorption portion, extends, when viewed from the first direction, in a third direction intersecting the second direction, which is the extending direction of the flexible substrate, to a point closer to the outer edge of the flexible substrate. The thickness of the heat dissipation portion in the first direction is greater than the thickness of the heat absorption portion in the first direction.

2. The radiation imaging device as claimed in claim 1, wherein, The heat-absorbing component is not bonded to the flexible substrate or the IC chip.

3. The radiation imaging device as described in claim 1 or 2, wherein, The heat-absorbing component has a plurality of sheet components stacked in the first direction.

4. The radiation imaging apparatus according to any one of claims 1 to 3, wherein, When viewed from the first direction, the heat-absorbing member is positioned outside the detection area.

5. The radiation imaging apparatus according to any one of claims 1 to 4, wherein, The thickness of the heat-absorbing member in the first direction is, in its natural state, approximately uniform throughout the entire region of the heat-absorbing member in the third direction. The heat-absorbing part is configured to be clamped between the flexible substrate and the support member and compressed in the first direction.

6. The radiation imaging apparatus according to any one of claims 1 to 5, wherein, One end of the flexible substrate is connected to a terminal disposed on a connection surface on the side opposite to the back surface of the control substrate. A capacitor is disposed between one end of the flexible substrate and the area where the IC chip is mounted. The heat-absorbing component is configured not to contact the capacitor.

7. The radiation imaging apparatus according to any one of claims 1 to 6, wherein, One end of the flexible substrate is connected to a terminal disposed on a connection surface on the side opposite to the back surface of the control substrate. A capacitor is disposed between one end of the flexible substrate and the area where the IC chip is mounted. The inner end of the contact surface of the heat-absorbing portion that is closest to the control substrate is located further away from the back side than the connection surface of the control substrate in the first direction, so that the capacitor is configured not to contact the control substrate.

8. The radiation imaging apparatus according to any one of claims 1 to 7, wherein, One end of the flexible substrate is connected to a terminal disposed on a connection surface on the side opposite to the back surface of the control substrate. When viewed from the third direction, the contact surface of the heat-absorbing portion is inclined such that it moves closer to the control substrate along the second direction and away from the back surface along the first direction.

9. The radiation imaging apparatus according to any one of claims 1 to 8, wherein, The support member includes: a base plate having a support surface and a back surface; and a radiation shielding member disposed at the edge of the base plate when viewed from the first direction. The heat-absorbing component is disposed between the radiation shielding component and the IC chip.

10. The radiation imaging apparatus of claim 9, wherein, The heat capacity of the heat-absorbing component is greater than that of the radiation shielding component.

11. The radiation imaging apparatus as claimed in claim 9 or 10, wherein, When viewed from the first direction, the radiation shielding member is positioned at a location overlapping the outer edge of the control substrate or at a location further outward than the outer edge. The range in which the heat-absorbing member is disposed in the second direction is included in the range in which the radiation-shielding member is disposed in the second direction.

12. The radiation imaging apparatus according to any one of claims 1 to 11, wherein, It includes: a plurality of the aforementioned flexible substrates arranged along the third direction, each on which the IC chip is mounted. One of the heat-absorbing members extends along the third direction in a manner corresponding to the plurality of the flexible substrates.

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