Wafer pair debonding apparatus

Abstract

The application discloses a wafer pair debonding device, which comprises a workbench, a cutting line and a winding support; the workbench is used for placing and fixing a wafer pair to be debonded, and the wafer pair is bonded through an adhesive layer; the winding support is slidingly installed on the workbench, and the cutting line is installed on the workbench through the winding support and is aligned with the adhesive layer of the wafer pair; the winding support drives the cutting line to move parallel to the wafer pair through manual or power source driving mode, and the moving path of the cutting line passes through the adhesive layer of the wafer pair to realize debonding. The application has the beneficial effects that the wafer pair is separated through the mode of directly cutting the adhesive layer by the cutting line, and the contact area with the adhesive layer in the cutting process can be effectively reduced. In addition, the intervention of the cutting line can change the chemical debonding into turbulent flow driving, so that the debonding speed, quality and application range are improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor processing technology, and in particular to a wafer pair debonding device. Background Technology

[0002] In the microelectronics industry, advanced packaging technologies are widely used in the manufacture of sensors and other electronic devices. Typical examples include 2.5D or 3D stacked semiconductor wafers based on through-silicon vias (TSVs), fan-out wafer-level packaging (FOWLP) or board-level packaging (FOPLP), as well as embedded packaging and system-in-package (SiP). These technologies all require thin wafers; the advantages of thin wafers include improved heat dissipation, easier 3D stacking, reduced resistance, and substrate flexibility. Many consumer products also require ultra-thin semiconductor wafers, with thickness requirements as low as 100 μm or less. Through-silicon vias (TSVs) belong to wafer-level packaging (WLP), which helps reduce package size, making integration into mobile electronic products easier.

[0003] In the fabrication of through-silicon vias (TSVs) for 3D or 2.5D stacking, wafer thinning is primarily achieved through grinding. Because ultrathin wafers are highly unstable and more susceptible to stress than traditional wafers, breakage and warping can occur during the grinding process. Therefore, temporary bonding techniques are often used for support during wafer thinning. Specifically, the device wafer to be thinned is bonded to a rigid carrier wafer, which then secures the device wafer for subsequent thinning via chemical etching or mechanical grinding. After the wafer thinning process is complete, the wafer pair formed by bonding the device wafer and the carrier wafer needs to be debonded.

[0004] Commonly used debonding methods in advanced packaging and other related fields include chemical debonding, thermal sliding or shearing debonding, laser debonding, and mechanical debonding. These four methods have the following drawbacks: laser debonding can only contact the adhesive through glass, is expensive, does not conform to first principles, and alters the chemical properties of the adhesive, thus losing its recyclability. Chemical, thermal sliding, and mechanical debonding methods generally conform to first principles, but chemical debonding is too slow due to laminar flow limitations; thermal sliding debonding is limited by the high relative viscosity of molten polymers (compared to water), requiring the adhesive to move relative to the entire wafer pair, increasing the chance of breakage and being slow; mechanical debonding is also limited by factors such as the large contact area between the adhesive and the wafer pair, thus restricting its large-scale application. Therefore, there is an urgent need for a debonding device that can overcome the above-mentioned technical defects. Summary of the Invention

[0005] One objective of this application is to provide a wafer pair debonding device capable of addressing at least one of the defects in the aforementioned background art.

[0006] To achieve at least one of the above objectives, the technical solution adopted in this application is as follows: a wafer pair debonding apparatus, comprising a worktable, a dicing wire, and a winding support; the worktable is used to place and fix the wafer pair to be debonded, the wafer pair being bonded through an adhesive layer; the winding support is slidably mounted on the worktable, the dicing wire is mounted on the worktable through the winding support, and aligned with the adhesive layer of the wafer pair; the winding support is driven manually or by a power source to move the dicing wire parallel to the wafer pair, the movement path of the dicing wire passing through the adhesive layer of the wafer pair to perform debonding.

[0007] Preferably, the cutting line is translated along a first direction parallel to the wafer pair.

[0008] Preferably, the cutting line is translated along a first direction parallel to the wafer pair, while the cutting line is reciprocated or unidirectionally translated along a second direction parallel to the wafer pair; wherein the first direction and the second direction are perpendicular to each other.

[0009] Preferably, the first end of the cutting line is fixed in position, and the cutting line rotates around the first end in the direction parallel to the wafer pair.

[0010] Preferably, the dicing line and the wafer pair are adapted to undergo relative unidirectional continuous rotation around the geometric center of the wafer pair, and the distance between the dicing line and the geometric center of the wafer pair gradually decreases during the debonding process.

[0011] Preferably, the dicing line and the wafer pair are adapted to reciprocate at a set angle, and the distance between the dicing line and the geometric center of the wafer pair gradually changes during the debonding process.

[0012] Preferably, the thickness of the cutting line is less than 10 times the thickness of the adhesive layer.

[0013] Preferably, the cutting line adopts a rigid structure and is generally in the shape of a sheet or a saw.

[0014] Preferably, the cutting wire adopts a flexible structure and is linear or sheet-like in shape. For linear cutting wires, it is suitable to obtain them by winding single or multiple filaments, and for sheet-like cutting wires, it is suitable to obtain them by winding multiple filaments and then flattening them.

[0015] Preferably, the material of the cutting line is one or a combination of synthetic or natural polymer materials, metallic materials, ceramic or inorganic materials, and composite materials.

[0016] Preferably, the winding bracket is bow-shaped, and the cutting wire is tensioned at both ends of the winding bracket.

[0017] Preferably, there is a pair of winding supports, and the cutting wire is tensioned between the two winding supports.

[0018] Preferably, each of the winding supports is provided with a guide frame, and the guide frame is provided with a guide opening extending horizontally for the cutting wire to pass through, so that the cutting wire of the wafer structure remains parallel to the wafer pair during the debonding process.

[0019] Preferably, at least one of the winding supports is equipped with an automatic winding device, and the end of the cut wire is wound around the automatic winding device; the automatic winding device tensions the cut wire by rotating and winding the cut wire.

[0020] Preferably, one of the winding supports is equipped with the automatic winding device, and the other winding support is rotatably equipped with a winding roller via a first elastic element; the two ends of the cutting wire are respectively wound around the automatic winding device and the winding roller; the automatic winding device drives the cutting wire to reciprocate or move in one direction by rotation.

[0021] Preferably, a pressure sensor is installed on the winding bracket, and the pressure sensor is used to identify the tension of the cutting wire.

[0022] Preferably, the automatic winding device is installed on both winding supports; the cutting wire is tensioned by keeping one of the automatic winding devices stationary and the other automatic winding device rotating, or by the two automatic winding devices rotating in opposite directions; the two automatic winding devices rotate synchronously in the same direction to drive the cutting wire to reciprocate or move in one direction.

[0023] Preferably, the wafer debonding device further includes a displacement mechanism mounted on the worktable, the displacement mechanism being connected in cooperation with the winding support, and the displacement mechanism being used to drive the winding support to move.

[0024] Preferably, the displacement mechanism includes a first displacement device and a second displacement device connected by a drive, the driving directions of the first displacement device and the second displacement device being perpendicular; wherein, the first displacement device drives the winding bracket to move the cutting wire in a first direction, and the second displacement device drives the winding bracket to move the cutting wire in a reciprocating translation in a second direction.

[0025] Preferably, there are two displacement mechanisms, and the two winding brackets are respectively installed on the corresponding displacement mechanisms, and the two displacement mechanisms move synchronously.

[0026] Preferably, the worktable includes a body, a placement stage, and a clamping device; the placement stage is mounted on the body, the wafer pairs to be debonded are placed on the placement stage, and the clamping device is used to position and clamp the wafer pairs placed on the placement stage.

[0027] Preferably, the upper surface of the placement stage is provided with evenly distributed grooves, which are connected to the lower surface of the placement stage through a connection port; the wafers to be debonded are placed on the upper surface of the placement stage and cover the grooves; the clamping device is an adsorption device, which is installed in the machine body and connected to the connection port through a working port, and the adsorption device is used to evacuate the grooves.

[0028] Preferably, the placement platform is mounted on the machine body via a damped rotation on one side; or, a rotating device mounted on the machine body is driven to one side of the placement platform; the placement platform is adapted to rotate vertically within a range of 0 to 180° around the machine body.

[0029] Preferably, the worktable further includes a heating device, which is installed on the placement stage and is used to heat the wafer pairs to be debonded placed on the placement stage.

[0030] Preferably, the worktable further includes a cooling device, which is installed on the machine body or the placement stage, and is used to cool the wafer pairs to be debonded placed on the placement stage.

[0031] Preferably, the wafer pair debonding apparatus further includes a solvent spraying mechanism for spraying a chemical solvent onto the wafer pair to be debonded placed on the worktable; the chemical solvent is used to dissolve the adhesive layer at the edge of the wafer pair, and the dicing line is adapted to cut along the dissolved position of the adhesive layer.

[0032] Preferably, the solvent spraying mechanism includes a nozzle, a reservoir, and a drive pump; the reservoir is used to hold the chemical solvent, the nozzle is installed on the side of the worktable and faces the adhesive layer of the wafer pair; the input and output ends of the drive pump are respectively connected to the reservoir and the nozzle, and the drive pump is used to pump the chemical solvent in the reservoir to the nozzle for spraying to the edge of the adhesive layer.

[0033] Preferably, multiple nozzles are provided, and the multiple nozzles are arranged at equal intervals along the circumferential direction of the wafer pair.

[0034] Preferably, a solvent collection tank is provided on the side of the workbench, the solvent collection tank being used to collect the sprayed chemical solvent; the solvent collection tank is connected to the input end of the drive pump.

[0035] Preferably, the solvent spraying mechanism further includes a solvent heater for heating the unsprayed chemical solvent.

[0036] Preferably, the wafer pair debonding device further includes a gripping mechanism mounted on the worktable; the gripping mechanism grips the wafer located on the upper layer of the wafer pair through the gripping end, and the gripping mechanism is adapted to drive the gripped wafer to perform translation or rotation parallel to the wafer pair.

[0037] Preferably, the gripping mechanism includes an adsorption component and a driving arm; the driving arm is movably mounted on the side of the worktable, and the adsorption component is mounted on the driving arm; wherein, the adsorption component is used to adsorb the wafer located on the upper layer of the wafer stack, and the driving arm is used to drive the adsorption component to move.

[0038] Preferably, the drive arm includes a connecting arm, which is configured to be parallel to the wafer pair. The connecting arm is rotatably mounted on the worktable via a first end, and the adsorption assembly is mounted on the second end of the connecting arm.

[0039] Preferably, the drive arm further includes a rotary driver, which is fixedly mounted on the worktable and connected to the first end of the connecting arm via a drive end. The rotary driver is used to drive the connecting arm to move the adsorption assembly.

[0040] Preferably, the adsorption assembly includes a suction cup and a second elastic element. The suction cup is slidably mounted on the second end of the drive arm along the axial direction of the wafer pair via a guide rod. The guide rod and the drive arm are connected by the second elastic element. The initial height of the suction cup is above the wafer pair. Pressing the guide rod drives the suction cup to adsorb the wafer located on the upper layer of the wafer pair.

[0041] Preferably, the adsorption assembly includes a suction cup and a telescopic actuator. The telescopic actuator is fixedly mounted on the second end of the drive arm, and the suction cup is mounted on the drive end of the telescopic actuator along the axial direction of the wafer pair. The initial height of the suction cup is located above the wafer pair, and the telescopic actuator is used to drive the suction cup to approach and adsorb the wafer located on the upper layer of the wafer pair.

[0042] Preferably, the number of suction cups is set to multiple; the adsorption assembly further includes a connecting frame, the connecting frame is provided with multiple extension ends corresponding to the number of suction cups; the connecting frame is fixedly installed on the second end of the drive arm, the suction cups are slidably installed on the extension ends through the guide rod, and the guide rod and the extension ends are connected by the second elastic member.

[0043] Preferably, the number of suction cups is set to multiple; the adsorption assembly further includes a connecting frame, the connecting frame is provided with multiple extension ends corresponding to the number of suction cups; the suction cups are respectively installed on the extension ends, and the drive arm is connected to the connecting frame through the drive section of the telescopic driver installed at the second end.

[0044] Preferably, the adsorption assembly further includes an air pump, the working end of which is connected to the suction cup. The air pump controls the suction cup to adsorb and release the wafer from the upper layer by drawing in and releasing air.

[0045] Preferably, the wafer pair debonding device further includes a control screen installed on the worktable, the control screen controlling the wafer pair debonding process through a built-in control system.

[0046] Preferably, a protective cover is rotatably mounted on one side of the worktable to protect the wafer pair debonding process, and the protective cover is made of transparent material.

[0047] Preferably, the wafer pair debonding device further includes an alarm light and an emergency stop button installed on the worktable; wherein, the alarm light is used to alarm for faults occurring during the wafer pair debonding process; and the emergency stop button is used to control the shutdown of the wafer pair debonding device.

[0048] Compared with the prior art, the beneficial effects of this application are as follows:

[0049] Compared to traditional methods, this application achieves wafer pair separation by directly cutting the adhesive layer with dicing lines, effectively reducing the contact area with the adhesive layer during dicing. Furthermore, the intervention of the dicing lines transforms chemical debonding into turbulent-driven processes, thereby improving the speed, quality, and application range of debonding. Attached Figure Description

[0050] Figure 1 A schematic diagram of the process flow for thinning device wafers.

[0051] Figure 2 This is a schematic diagram of the overall structure of one embodiment of this application.

[0052] Figure 3 This is a schematic diagram of the structure of the organism in this application.

[0053] Figure 4 This is a schematic diagram of one example of the placement platform in this application.

[0054] Figure 5 This is a schematic diagram of another example of the placement stage in this application.

[0055] Figure 6 This is a schematic diagram of the structure in this application where the wafer is positioned and clamped using a clamping block.

[0056] Figure 7 This is a schematic diagram showing the state in which the platform rotates around the installation position in this application.

[0057] Figure 8 This is a schematic diagram showing the state of the cutting line unbonding through translation in this application.

[0058] Figure 9 This is a schematic diagram showing the state of the cutting line being debonded by rotation in this application.

[0059] Figure 10 This is a schematic diagram illustrating the state of debonding as the dicing line rotates around the geometric center of the wafer pair in this application.

[0060] Figure 11 This is a schematic diagram illustrating the state of debonding in this application where the dicing wires reciprocate around the wafer at a set angle.

[0061] Figure 12 This is a schematic diagram of the solvent spraying mechanism in this application.

[0062] Figure 13 This is a schematic diagram of the structure of different types of cutting lines in this application.

[0063] Figure 14 This is a schematic diagram of different structures for mounting the cutting wire on the winding bracket in this application.

[0064] Figure 15 This is a schematic diagram of the structure in this application where the cutting wire is installed via two winding brackets.

[0065] Figure 16 This is a schematic diagram of the structure in this application where the cutting wire is tensioned by an automatic winding device.

[0066] Figure 17 This is a schematic diagram of the guide frame in this application.

[0067] Figure 18 This is a schematic diagram of the winding bracket installed on the drive mechanism in this application.

[0068] Figure 19 This is a partial installation structure diagram of the first displacement device and the second displacement device in this application.

[0069] Figure 20 This is a schematic diagram of one example of the grabbing mechanism in this application.

[0070] Figure 21 This is a schematic diagram showing the state in which the chuck adsorbs the wafer in the upper layer of the wafer in this application.

[0071] Figure 22 This is a schematic diagram showing the state in which the gripping mechanism in this application grips the wafer in the upper layer of the wafer pair.

[0072] Figure 23 This is a structural diagram of another example of the grasping mechanism in this application.

[0073] Figure 24 This is a schematic diagram illustrating the state in which multiple chucks are used to grip wafer pairs in this application.

[0074] In the diagram: Wafer pair 01, Adhesive layer 011, Adhesive 0111, Wafer 012, Carrier wafer 0121, Device wafer 0122, Workbench 1, Body 11, Table surface 110, Solvent collection tank 111, Support area 112, Opening groove 113, Slide groove 114, Mounting groove 115, Vertical surface 116, Air outlet 117, Placement platform 12, Groove 120, Annular groove 1201, Straight groove 1202, Connection port 121, Hinge seat 122, Positioning groove 123, Cooling device 13, Protective cover 14, Air inlet 140, Control panel 15, Alarm light 16, Emergency stop button 17, Vacuum pressure gauge 18, Adsorption device 19, Clamping block 19a, Flexible part 190a, Drive source 19b 3. Winding bracket 3, frame 31, guide frame 311, guide port 3110, take-up roller 32, first rotary driver 33, displacement mechanism 34, first displacement device 34a, second displacement device 34b, second rotary driver 341, lead screw 342, slider 343, mounting base 344, cutting wire 200, solvent spraying mechanism 4, pipeline 40, drive pump 41, nozzle 42, solvent heater 43, gripping mechanism 5, drive arm 51, connecting arm 511, rotating shaft 512, third rotary driver 513, adsorption assembly 52, suction cup 521, connecting sleeve 5211, air pipe interface 5212, guide rod 522, spring 523, telescopic driver 524, mounting bracket 525, connecting bracket 526. Detailed Implementation

[0075] The present application will now be further described in conjunction with specific embodiments. It should be noted that, in the description of this specification, the use of terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicates that the specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms should not be construed as necessarily referring to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. In addition, those skilled in the art can combine and integrate the different embodiments or examples described in this specification.

[0076] In the description of this application, it should be noted that the terms "center", "lateral", "longitudinal", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc., which indicate the orientation and positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and should not be construed as limiting the specific protection scope of this application.

[0077] It should be noted that the terms "first," "second," etc., in the specification and claims of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence.

[0078] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0079] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature being directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0080] The terms “comprising” and “having”, and any variations thereof, in the specification and claims of this application are intended to cover non-exclusive inclusion, for example, a process, method, system, product, or device that includes a series of steps or units is not necessarily limited to those steps or units that are explicitly listed, but may include other steps or units that are not explicitly listed or that are inherent to such process, method, product, or device.

[0081] To facilitate understanding of the technical solution of this application, the thinning process of the device wafer will be described in detail below.

[0082] Before performing the thinning process on the 0122 wafer of the device, such as Figure 1 As shown, a suitable carrier wafer 0121 can be selected, and then an adhesive 0111 is coated on one end face of the carrier wafer 0121. Then, the unprocessed side of the device wafer 0122 to be processed is attached to the end face of the carrier wafer 0121 coated with adhesive 0111. After applying a certain pressure, the adhesive 0111 can be cured to fix the device wafer 0122 and the carrier wafer 0121 to form a wafer pair 01. That is, the wafer pair 01 includes two wafers 012 (device wafer 0122 and carrier wafer 0121) and an adhesive layer 011 formed by the cured adhesive 0111.

[0083] During the thinning process of device wafer 0122, the carrier wafer 0121 in the obtained wafer pair 01 is fixed, and then the processing surface of device wafer 0122 is thinned by methods such as grinding or chemical etching to finally obtain device wafer 0122 of the required thickness. This is specifically applied to semiconductor or wafer or board-level packaging processes such as PVD, CVD, coating, photolithography, and wiring. After obtaining device wafer 0122 of the required thickness, the adhesive layer 011 in wafer pair 01 needs to be broken to separate device wafer 0122 from carrier wafer 0121. This process is called debonding. After completing the debonding of wafer pair 01, the adhesive 0111 adhering to the surface of each wafer 012 can be cleaned to finally obtain the device wafer 0122 unit of the required thickness.

[0084] It should be noted that there are four main methods for debonding in the existing technology: chemical debonding, thermal sliding or shear debonding, laser debonding, and mechanical debonding.

[0085] Chemical debonding involves immersing the wafer pair 01 in a solvent, which removes the thermoplastic adhesive layer 011. This method is suitable for applications where the debonding speed is not critical.

[0086] Thermal sliding or shear debonding involves heating wafer pair 01 to above the softening temperature of the binder layer 011, and then applying opposing shear forces to the two wafers 012, causing them to slowly slide against each other until the structure separates. This method is difficult to execute quickly because the binder layer 011 has a high viscosity after softening.

[0087] Laser debonding involves coating adhesive 0111 onto a polymer laser-sensitive layer on the surface of the carrier wafer 0121 during the adhesive coating process. During debonding, a laser irradiates and scans the carrier wafer 0121 within the wafer pair 01, causing the polymer laser-sensitive layer to ablate and decompose. This significantly reduces the adhesive strength of the adhesive layer 011, achieving debonding. However, this method requires the use of a polymer laser-sensitive layer, which cannot be recycled, and laser ablation produces residues that are difficult to clean.

[0088] Mechanical debonding involves inducing a crack in the adhesive layer 011 at the structural edge of wafer pair 01, then using very low force to propagate the crack across the entire interface between the layers to cause separation of the two wafers 012. This method is relatively rough, easily damaging the device wafer 0122, and the debonding process can be slow.

[0089] Based on the aforementioned shortcomings of existing debonding methods, this application provides a wafer pair debonding device that differs from existing debonding methods, enabling rapid debonding of wafer pairs (0 and 1). For example... Figure 2 and Figure 5 As shown, one preferred embodiment includes a worktable 1, a dicing wire 200, and a winding bracket 3. The worktable 1 is used to place and fix the wafer pair 01 to be debonded, which is bonded by an adhesive layer 011. The winding bracket 3 is slidably mounted on the worktable 1, and the dicing wire 200 is mounted on the worktable 1 via the winding bracket 3 and aligned with the adhesive layer 011 of the wafer pair 01.

[0090] When debonding wafer pair 01 is required, the wafer pair 01 bonded by the adhesive layer 011 can be placed in the designated position on the worktable 1. The specific placement method for wafer pair 01 can be either contact between the carrier wafer 0121 and the worktable 1, or contact between the device wafer 0122 and the worktable 1, which can be selected according to the actual needs of those skilled in the art. After placing the wafer pair 01, the worktable 1 can fix the wafer pair 01 using a specific fixing method. After pre-processing the fixed wafer pair 01, the winding bracket 3 can be driven manually or by a power source to move the dicing wire 200 parallel to the wafer pair 01. The movement path of the dicing wire 200 passes through the adhesive layer 011 of the wafer pair 01 to perform debonding.

[0091] It is understood that the technical solution of this application achieves the separation of wafer pairs 01 by setting a dicing line 200 to directly cut the adhesive layer 011. Since the thickness of the dicing line 200 is generally relatively thin, compared with the traditional mechanical debonding method, the contact area can be reduced by at least several orders of magnitude through the contact between the dicing line 200 and the adhesive layer 011. Thus, during the debonding process, damage to the device wafer 0122 and the carrier wafer 0121 can be effectively reduced, and the debonding efficiency can also be effectively improved.

[0092] It should be understood that the wafer pair debonding device of this application can be applied to both portable and automated mass production scenarios. In portable scenarios, due to limited installation space, the debonding process of the dicing wire 200 can be performed manually or driven by an additional power source, which can be one of motor drive, pneumatic drive, or hydraulic drive. In automated mass production scenarios, the debonding process of the dicing wire 200 is generally driven by an additional power source, which can be one of motor drive, pneumatic drive, or hydraulic drive. However, in portable scenarios, when selecting an additional power source to drive the dicing wire 200, pneumatic and hydraulic drives require additional air and hydraulic sources, which may result in limited installation space. Therefore, in portable scenarios, motor drive is preferred when the dicing wire 200 is driven by a power source. To simplify the description, the technical solution of this application will be illustrated using a specific structure for portable scenarios.

[0093] It should be noted that in the technical solution of this application, the wafer pair 01 fixedly placed on the workbench 1 for debonding can be a generally circular wafer pair 01, a rectangular wafer pair 01, or a wafer pair 01 reconstructed from multiple wafers. Specifically, in board-level packaging applications, the device wafer 0122 may be rectangular or square; therefore, when fabricating the corresponding wafer pair 01, a corresponding rectangular carrier wafer 0121 is needed to support the device wafer 0122, thus obtaining a rectangular wafer pair 01. In fan-out packaging applications, multiple wafers or chips need to be arranged on the surface of the carrier wafer 0121 according to a set spacing and reconstructed using molding materials, such as epoxy resin, and then processed through wiring, coating, and insulator electroplating to obtain a reconstructed wafer pair formed by epoxy resin adhesion. That is, the wafer pair debonding device of this application can debond circular wafer pairs 01, reconstructed wafer pairs, and rectangular wafer pairs 01. To simplify the following description, the following detailed explanation will take a circular wafer pair 01 as an example.

[0094] In some embodiments, such as Figure 2 and Figure 3 As shown, the workbench 1 includes a body 11, a placement platform 12, and a clamping device. The specific structure of the body 11 varies depending on the application scenario; in portable scenarios, the body 11 can adopt a structure such as... Figure 2 and Figure 3The box structure shown is used; however, in automated mass production scenarios, the body 11 can be a shell structure or a frame structure. A placement stage 12 is mounted on the body 11 to place the wafer pair 01 to be debonded. To facilitate the installation of the placement stage 12, the body 11 is provided with at least a planar platform 110, on which the placement stage 12 can be mounted. After the wafer pair 01 is placed, to ensure the smooth progress of the debonding process, it is necessary to ensure that the wafer pair 01 remains stationary relative to the placement stage 12 during the debonding process. Therefore, a clamping device is used to position and clamp the wafer pair 01 to be debonded on the placement stage 12.

[0095] It is understandable that there are various specific structures for the clamping device that can position and clamp the wafer pair 01 placed on the placement stage 12. For ease of understanding, a detailed description can be provided.

[0096] In some embodiments, such as Figures 4 to 5 As shown, the upper surface of the placement stage 12 is provided with evenly distributed grooves 120, which are connected to the lower surface of the placement stage 12 via a connection port 121. The wafer pair 01 to be debonded is placed on the upper surface of the placement stage 12 and covers the grooves 120. An opening slot 113 is provided in the middle of the table surface 110 of the machine body 11; the clamping device can be an adsorption device 19, which is installed inside the machine body 11 and connects its working port through the opening slot 113 to the connection port 121. The adsorption device 19 is used to evacuate the grooves 120, thereby adsorbing the wafer 012 under the wafer pair 01 through the negative pressure formed in the grooves 120, so as to ensure that the wafer pair 01 can remain stationary relative to the placement stage 12 during the debonding process.

[0097] It is understood that the specific structure and working principle of the adsorption device 19 are well-known to those skilled in the art. In this embodiment, an air pump is preferably used for the adsorption device 19. It should be noted that wafer pairs 01 of different diameters or masses have different weights; therefore, the negative pressure generated by the adsorption device 19 needs to be adapted according to the specific type of wafer pair 01. Factors affecting the negative pressure generated by the adsorption device 19 include the power of the adsorption device 19 and the distribution structure and depth of the grooves 120. That is, when facing different types of wafer pairs 01, the power of the adsorption device 19 can be adjusted and / or the placement stage 12 with grooves 120 having different distribution structures and / or depths can be replaced. It should be noted that for circular wafer pairs 01, the corresponding grooves 120 are also circular; in this case, the geometric center of the groove 120 is the center of the circle, and its radial direction is the radius. For rectangular wafer pairs 01, the corresponding grooves 120 are also rectangular; in this case, the geometric center of the groove 120 is the intersection of the diagonals, and its radial direction refers to the direction extending outward from the geometric center point. To facilitate understanding, a circular groove will be used as an example for specific explanation below; there are multiple specific implementation methods for the groove 120 distribution structure, and two specific examples will be used for detailed explanation below.

[0098] Example 1: such as Figure 4 As shown, the groove 120 includes at least one annular groove 1201 and multiple straight grooves 1202. The specific number of annular grooves 1201 can be adapted to the structural dimensions of the wafer pair 01; generally, to ensure stable adsorption of the wafer pair 01, multiple annular grooves 1201 are provided, with their geometric center points coinciding and arranged at equal intervals from the outside to the inside. The straight grooves 1202 extend radially along the annular grooves 1201, with a single straight groove 1202 passing sequentially through all the annular grooves 1201 to connect all the annular grooves 1201 to the connection port 121. To ensure a balanced negative pressure formed by the annular grooves 1201 along the circumferential direction, multiple straight grooves 1202 are generally provided, and they are arranged at equal intervals along the circumferential direction of the annular grooves 1201.

[0099] One specific embodiment, such as Figure 4 As shown, there are four annular grooves 1201 and four straight grooves 1202. One end of each of the four straight grooves 1202 is connected to the annular groove 1201 with the largest diameter, and the other ends of the four straight grooves 1202 converge at the geometric center of the annular groove 1201. Therefore, the connection port 121 is also located at the geometric center of the annular groove 1201.

[0100] It is important to note that the diameter of the largest annular groove 1201 should be slightly smaller than the diameter of the wafer pair 01 to be debonded. This ensures that a relatively sealed negative pressure formation structure is created by covering all annular grooves 1201 with wafer pair 01, thus facilitating stable vacuuming by the adsorption device 19. After the debonding of wafer pair 01 is completed, the adsorption device 19 can be shut down to release the negative pressure formed by the grooves 120 on the wafer 012 beneath wafer pair 01, facilitating the subsequent recovery of wafer 012.

[0101] Example 2: such as Figure 5 As shown, multiple grooves 120 are provided in a fan shape, and the multiple grooves 120 can be arranged around each other to form a circular negative pressure path. The diameter of this circular negative pressure path is slightly smaller than the diameter of the wafer pair 01 to ensure that a relatively sealed negative pressure forming structure is constructed by covering the grooves 120 with the wafer pair 01, thereby facilitating the adsorption device 19 to stably achieve vacuuming. The converging end of all the grooves 120 is connected to the connection port 121 located at the center point of the circular negative pressure path. The specific number of grooves 120 and the central angle corresponding to a single groove 120 can be selected according to the actual needs of those skilled in the art. One specific embodiment is as follows: Figure 5 As shown, there are eight grooves 120, and the central angle of each groove 120 is 20°.

[0102] It is understood that both of the above examples can meet the needs of this application, and those skilled in the art can choose according to actual needs. In this embodiment, Example 1 is preferred. Furthermore, to further enhance the positioning effect of the placement stage 12 on wafer pair 01, such as... Figure 4 and Figure 5 As shown, a recessed positioning groove 123 can be provided on the end face of the placement stage 12. The depth of the positioning groove 123 is less than or equal to the thickness of the wafer 012 under the wafer pair 01. A groove 120 is provided in the positioning groove 123. The diameter of the positioning groove 123 is equal to or slightly larger than the diameter of the wafer pair 01.

[0103] In other embodiments, such as Figure 6 As shown, the clamping device may include multiple clamping blocks 19a, which can be arranged around each other so that the end faces of the multiple clamping blocks 19a are tangent to the same circumference, and the multiple clamping blocks 19a can be spaced apart along the circumferential direction; each clamping block 19a can be slidably mounted on the placement stage 12 in the radial direction. After the wafer pair 01 is placed on the placement stage 12, each clamping block 19a can be driven to retract radially until the end face of each clamping block 19a abuts against the sidewall of the wafer 012 under the wafer pair 01, thereby achieving the positioning and clamping of the wafer pair 01.

[0104] Understandably, for a circular wafer pair 01, the contact surface between the clamping block 19a and the wafer pair 01 can be either a flat surface or an arc-shaped surface; if an arc-shaped surface is used, it needs to fit the outer contour of the wafer pair 01. For a rectangular wafer pair 01, the contact surface between the clamping block 19a and the wafer pair 01 can be either a flat surface or a 90° angled surface. For clamping blocks 19a with flat contact surfaces, there can be one pair, positioned opposite each other on opposite sides of the wafer pair 01; there can also be two pairs of clamping blocks 19a with flat contact surfaces, positioned on all four sides of the wafer pair 01. For clamping blocks 19a with angled contact surfaces, there can be one pair, positioned at two opposite corners of the wafer pair 01; there can also be two pairs of clamping blocks 19a with angled contact surfaces, positioned at all four corners of the wafer pair 01. The clamping block 19a can be driven manually and then fixed with fasteners; alternatively, it can be driven by an additional drive source 19b, which can be pneumatic, hydraulic, or motor-driven. Considering the stability of the wafer pair 01, this embodiment preferably uses an additional drive source 19b to drive the clamping block 19a.

[0105] It should be noted that, in order to avoid damage to the wafer pair 01 caused by the rigid structure, the clamping block 19a is made of a flexible material, or as... Figure 6 As shown, a flexible portion 190a is provided on the end face of the clamping block 19a used to contact the wafer pair 01. To prevent excessive clamping force of the clamping block 19a on the wafer pair 01 from causing damage to the wafer 012, a pressure sensor (not shown) can be provided on the clamping block 19a. The pressure sensor can be installed between the clamping block 19a and the drive end of the power source 19b, or the pressure sensor can be set on the contact end face between the clamping block 19a and the wafer pair 01. The pressure sensor can collect the clamping force of the clamping block 19a, thereby controlling the positioning and clamping of the wafer pair 01 based on the collected data. The clamping block 19a needs to have a certain thickness, so the lower wafer 012 of the wafer pair 01 clamped by the clamping block 19a needs to have sufficient thickness, or in other words, the positioning and clamping method using the clamping block 19a is suitable for the debonding of wafer pairs 01 with a relatively thick wafer 012.

[0106] It is important to understand that the aforementioned method of positioning and clamping the wafer to 01 using negative pressure adsorption is suitable for both portable and automated mass production scenarios; the method of mechanical clamping using clamping block 19a is suitable for automated mass production scenarios. Those skilled in the art can choose the appropriate positioning and clamping method based on the specific application requirements. For the sake of clarity in the following description, the method of positioning and clamping the wafer to 01 using negative pressure adsorption will be used as an example.

[0107] In some embodiments, for scenarios where debonding is performed manually, placing the wafer pair 0 and 1 horizontally may make manual operation inconvenient. For example... Figures 3 to 4 As shown, a hinge seat 122 is provided on one side of the placement platform 12, allowing the placement platform 12 to be rotatably mounted on the table surface 110 of the machine body 11 via the hinge seat 122; alternatively, a rotating device is mounted on the side of the table surface 110 of the machine body 11, with the drive end of the rotating device connected to one side of the placement platform 12. Through this rotatable mounting method, the placement platform 12 can rotate up and down at any angle within a 180° range around the table surface 110 of the machine body 11. The specific structure and working principle of the rotating device are well-known to those skilled in the art. Common rotating devices include motors, rotary cylinders, and rotary hydraulic cylinders; in this embodiment, a motor is preferred.

[0108] Specifically, during manual debonding, the operator's height is often higher than the placement height of the machine body 11, which makes it inconvenient for the operator to observe the adhesive layer 011 of the wafer pair 01. To facilitate manual debonding, such as... Figure 7 As shown, the placement stage 12, along with the positioned and clamped wafer pair 01, can be rotated at a certain angle so that the adhesive layer 011 is aligned with the operator's line of sight. Generally, the placement stage 12, along with the positioned and clamped wafer pair 01, can be rotated within a range of 30° to 60° for manual debonding.

[0109] It should be noted that in the scenario where the wafer pair 01 on the placement stage 12 is adsorbed by the adsorption device 19, the adsorption device 19 can be connected to the connection port 121 at the center of the placement stage 12 using a flexible air tube. The air tube needs to be reserved to ensure that the air tube will not interfere with the rotation of the placement stage 12 during the rotation process, and to ensure the continuous and stable adsorption of the wafer pair 01 by the negative pressure.

[0110] In some embodiments, the dicing line 200 is translated along a first direction parallel to the wafer pair 01 to debond the wafer pair 01.

[0111] In some embodiments, such as Figure 8As shown, the dicing line 200 is translated along a first direction X parallel to the wafer pair 01, and at the same time, the dicing line 200 is reciprocated or unidirectionally translated along a second direction Y parallel to the wafer pair 01, thereby achieving the debonding of the wafer pair 01; wherein, the first direction X and the second direction Y are perpendicular to each other.

[0112] Specifically, based on the reciprocating translational motion of the dicing line 200 along the first direction X and the second direction Y, the dicing line 200 can cut the adhesive layer 011 of the wafer pair 01 in a reciprocating sawing manner to achieve debonding. Of course, when the dicing line 200 moves in the second direction Y, it can also achieve debonding through unidirectional translation; this scenario is more suitable for scenarios where the cutting depth requirement is not high, or when performing subsequent heat-based wire debonding, the unidirectional movement of the dicing line 200 along the second direction Y can bring out the cut adhesive 0111 to appropriately avoid the cut adhesive 0111 from re-healing.

[0113] In some embodiments, such as Figure 9 As shown, the first end of the cutting line 200 is fixed in position, and the cutting line 200 rotates around the first end in the direction parallel to the wafer pair 01, thereby realizing the debonding of the wafer pair 01.

[0114] In some embodiments, such as Figure 10 As shown, the dicing line 200 and the wafer pair 01 can rotate continuously in a relative unidirectional direction around the geometric center of the wafer pair 01, and the distance between the dicing line 200 and the geometric center of the wafer pair 01 gradually decreases during the debonding process, thereby realizing the debonding of the wafer pair 01.

[0115] It is understandable that when the dicing line 200 and wafer pair 01 debond through relative unidirectional continuous rotation, the specific rotation angle can be less than one revolution or more than one revolution. There are two main implementation methods for achieving the above-mentioned line debonding method: Implementation Method 1: The dicing line 200 only performs unidirectional translational motion towards the geometric center of wafer pair 01 (the center of a circular wafer pair or the intersection of the diagonals of a rectangular wafer pair), while wafer pair 01 can perform unidirectional continuous rotation around its own geometric center. Implementation Method 2: Wafer pair 01 remains stationary, and the dicing line 200 performs a spiral trajectory around the geometric center of wafer pair 01, specifically resembling an Archimedean spiral. For ease of understanding, the two implementation methods described above will be described in detail below.

[0116] One specific example is the unidirectional translation of the cutting line 200 in Embodiment 1, which can be referenced to the movement of the cutting line 200 in the first direction X in the aforementioned embodiments, and will not be repeated here. Regarding the unidirectional continuous rotation of the wafer pair 01 around its geometric center in Embodiment 1, taking a circular placement stage 12 as an example, the entire placement stage 12 can be rotatably mounted on the platform 110 of the machine body 11 around its own axis. The placement stage 12 can then be manually driven to rotate, or a rotary motor installed inside the machine body 11 can be connected to the center of the placement stage 12, thereby driving the fixed wafer pair 01 to rotate under the drive of the rotary motor. Alternatively, a rotating disk for placing the wafer pair 01 can be rotatably mounted embedded in the upper surface of the placement stage 12, and a rotary motor mounted on the back of the placement stage 12 can be connected to the rotating disk, thereby driving the wafer pair 01 to rotate synchronously under the drive of the rotary motor. The first method is suitable for scenarios where the placement platform 12 does not rotate up and down around the platform surface 110, while the second method can be applied to any scenario.

[0117] Another concrete example, such as Figure 10 As shown, assume that the dicing wire 200 completes one revolution to cut the adhesive layer 011. Let the initial unbonding position of the dicing wire 200 be m1, and the contact position between the dicing wire 200 and the adhesive layer 011 at this point be N1. That is, the distance between the dicing wire 200 and the geometric center O of the wafer pair 01 is the length of line segment O-N1. When the dicing wire 200 rotates 60° counterclockwise based on the spiral trajectory to position m2, the contact position between the dicing wire 200 and the adhesive layer 011 at this point is N2. That is, the distance between the dicing wire 200 and the geometric center O of the wafer pair 01 at this point is the length of line segment O-N2. The dicing wire 200 continues to rotate 60° counterclockwise based on the spiral trajectory to position m3, and the contact position between the dicing wire 200 and the adhesive layer 011 at this point is N3. That is, the distance between the dicing wire 200 and the geometric center O of the wafer pair 01 at this point is the length of line segment O-N3. After the dicing line 200 continues to rotate counterclockwise by 60° based on the spiral trajectory, it reaches position m4. At this point, the contact position between the dicing line 200 and the adhesive layer 011 is N4, meaning the distance between the dicing line 200 and the geometric center O of wafer pair 01 is the length of line segment O-N4. After the dicing line 200 continues to rotate counterclockwise by 60° based on the spiral trajectory, it reaches position m5. At this point, the contact position between the dicing line 200 and the adhesive layer 011 is N5, meaning the distance between the dicing line 200 and the geometric center O of wafer pair 01 is the length of line segment O-N5. After the dicing line 200 continues to rotate counterclockwise by 60° based on the spiral trajectory, it reaches position m6. At this point, the contact position between the dicing line 200 and the adhesive layer 011 is the geometric center of wafer pair 01, meaning the dicing line 200 has now completed the cutting of the adhesive layer 011.

[0118] In some embodiments, such as Figure 11 As shown, the dicing line 200 and the wafer pair 01 can reciprocate at a set angle, and the distance between the dicing line 200 and the geometric center of the wafer pair 01 gradually changes during the debonding process, thereby realizing the debonding of the wafer pair 01.

[0119] It is understandable that there are two main implementation methods for the above-mentioned wire bonding method. Implementation Method 1: The dicing line 200 only performs unidirectional translation towards the geometric center of wafer pair 01 (the center of a circular wafer pair or the intersection of the diagonals of a rectangular wafer pair), while wafer pair 01 can reciprocate around its own geometric center. Implementation Method 2: Wafer pair 01 remains stationary, and the movement of the dicing line 200 can be decomposed into unidirectional translation and reciprocating rotation. For ease of understanding, the two implementation methods will be described in detail below. For the unidirectional translation of the dicing line 200 in Implementation Method 1, refer to the movement of the dicing line 200 in the first direction X in the aforementioned embodiment; the specific details will not be repeated. For the reciprocating rotation of wafer pair 01 around its own geometric center in Implementation Method 1, refer to the aforementioned unidirectional continuous rotation of wafer pair 01 around its own geometric center; simply adjust the unidirectional rotation mode of wafer pair 01 to a reciprocating rotation at a set angle. Implementation Method 2 will be explained in detail below with a specific example.

[0120] In a specific example, such as Figure 11 As shown, the dicing line 200 reciprocates within an angle range of α. The dicing line 200 can translate along a straight trajectory M passing through the geometric center O of wafer pair 01. Let the initial position of the dicing line 200 during debonding be m1, and the center point of the rotation of the dicing line 200 falling on the straight trajectory M. At this point, the contact position between the dicing line 200 and the adhesive layer 011 is located on the right side of the straight trajectory M. After rotating by an angle α, the contact position between the dicing line 200 and the adhesive layer 011 is located on the left side of the straight trajectory M, and the position of the dicing line 200 is m2. During this process, the dicing line 200 moves a predetermined distance along the straight trajectory M towards the geometric center of wafer pair 01. Subsequently, the cutting line 200 rotates to the right by an angle α and reaches position m3. As the cutting line 200 reciprocates by an angle α to the left and right and moves along the straight trajectory M, the cutting line 200 passes through positions m4, m5, m6, m7, m8, m9, m10, m11 and m12 in sequence and reaches m13. At this point, the cutting line 200 completely separates the adhesive layer to achieve the debonding and separation of wafer pairs 0 and 1.

[0121] It is understood that the five wire bonding methods described above—unidirectional translation, reciprocating sawing motion, rotation around a point, relative rotation with wafer pair 01, and relative reciprocating rotation with wafer pair 01—can all meet the actual needs of this application. The specific method can be selected according to the actual needs of those skilled in the art. However, considering the difficulty in setting up the wire winding bracket 3, in this embodiment, the preferred wire bonding method for the wire bonding of the dicing wire 200 is either unidirectional translation or reciprocating sawing motion.

[0122] It is important to understand that, under the five wire debonding methods described above, directly cutting the cured adhesive layer 011 in wafer pair 01 using the dicing wire 200 may be difficult and only suitable for wafer pairs 01 with low adhesive layer 011 bonding strength. Since wafer pairs 01 require pressure during formation, some adhesive 0111 between the two wafers 012 is extruded, resulting in an arc-shaped protrusion at the edge of the adhesive layer 011. This protrusion, along the thickness direction of the adhesive layer 011, is generally larger than the internal dimensions of the adhesive layer 011. This causes the dicing wire 200 to be easily guided to the side contacting wafer 012 when cutting the adhesive layer 011, potentially damaging the wafer 012. Therefore, to increase the applicability of the five wire debonding methods, the adhesive layer 011 can be pre-treated, i.e., softened or edge-removed, to accelerate the wire debonding process.

[0123] In some embodiments, a heating device (not shown) can be installed on the placement stage 12 to heat the wafer pair 01 to above the glass transition temperature of the adhesive layer 011, i.e., the adhesive layer 011 is in a softened state at this time. Then, the two wafers 012 in the wafer pair 01 can be separated by the translation of the cutting line 200, i.e., the debonding process is realized.

[0124] Specifically, there are various methods for heating the wafer to the 01 phase using a heating device, such as resistance wire heating, inductive heating, and infrared heating. The appropriate method can be selected based on the actual needs of those skilled in the art. The specific installation method of the heating device needs to be determined in conjunction with the specific heating method. Taking resistance wire heating as an example, the heating device can be installed within the groove 120, inside the placement stage 12, or on the lower end face of the placement stage 12, i.e., the end face opposite to the groove 120; the specific method can be selected based on the actual needs of those skilled in the art.

[0125] It is important to understand that the pretreatment of adhesive layer 011 is mainly to prevent the protrusions at the edges of adhesive layer 011 from interfering with the cutting initiation of the cutting line 200. Softening adhesive layer 011 by heating is a good pretreatment method; of course, in addition to heating, chemical etching can also be used to remove the edge parts of adhesive layer 011.

[0126] In some embodiments, such as Figure 2 and Figure 12 As shown, the wafer pair debonding apparatus of this application also includes a solvent spraying mechanism 4, which sprays chemical solvent onto the wafer pair 01 to be debonded placed on the worktable 1. The chemical solvent is used to dissolve the adhesive layer 011 at the edge of the wafer pair 01, and the cutting line 200 can cut along the dissolved position of the adhesive layer 011, thereby facilitating the subsequent wire debonding process.

[0127] It should be noted that since chemical solvents can generally only dissolve the outermost edge of the adhesive layer 011, meaning the interior of the adhesive layer 011 remains in a solidified, hard state, the reciprocating saw cutting method described above is preferred for debonding the dicing line 200. Furthermore, to accelerate the debonding process, the solvent spraying mechanism 4 continuously sprays chemical solvent onto the adhesive layer 011 of the wafer pair 01 throughout the entire debonding process of the dicing line 200.

[0128] In some embodiments, such as Figure 12 As shown, the solvent spraying mechanism 4 includes a nozzle 42, a reservoir, and a drive pump 41. The reservoir is used to hold the chemical solvent and is generally located inside the machine body 11. The nozzle 42 is mounted on the side of the table surface 110 of the machine body 11 in the workbench 1 and faces the adhesive layer 011 of the wafer pair 01. The input and output ends of the drive pump 41 are connected to the reservoir and the nozzle 42 respectively via pipelines 40. The drive pump 41 is used to pump the chemical solvent in the reservoir to the nozzle 42 for spraying. The sprayed chemical solvent can dissolve and eliminate the edge of the adhesive layer 011, thereby forming a thinning zone at the edge of the adhesive layer 011. Then, during subsequent wire debonding, the dicing wire 200 can debond the wafer pair 01 along this thinning zone. At the same time, during the subsequent wire debonding process, the thinning zone can continue to form, thereby accelerating the entire debonding process.

[0129] It is important to note that when setting up the nozzle 42, to ensure rapid debonding of the dicing line 200, the nozzle 42 needs to be located on the same side as the dicing line 200. That is, the adhesion position of the chemical solvent sprayed by the nozzle 42 on the adhesive layer 011 is the cutting position of the dicing line 200. Alternatively, chemical solvent can be sprayed onto other positions on the adhesive layer 011 to further accelerate the debonding process of the wafer pair 01. Multiple nozzles 42 can be set, and these nozzles 42 are arranged at equal intervals along the circumference of the wafer pair 01; at least one nozzle 42 is on the same side as the initial position of the dicing line 200.

[0130] One specific embodiment, such as Figure 12 As shown, there are two nozzles 42. The two nozzles 42 are positioned opposite each other along the first direction X of the cutting line 200. The two nozzles 42 can be connected in parallel to the output end of the drive pump 41 through the pipeline 40. The specific structure and working principle of the drive pump 41 are well known to those skilled in the art, and therefore will not be described in detail here. Common drive pumps 41 can be diaphragm pumps, plunger pumps, gear pumps, etc.

[0131] It should be noted that the chemical solvent sprayed from nozzle 42 will not react completely with the adhesive layer 011; that is, after dissolving the edges of the adhesive layer 011, some of the chemical solvent sprayed from nozzle 42 will remain on the countertop 110. To prevent the residual chemical solvent from flowing out, such as... Figure 12 As shown, a solvent collection tank 111 can be provided on the side of the platform 110 of the body 11; by providing the solvent collection tank 111, a support area 112 for supporting the placement platform 12 can be formed in the middle of the platform 110 of the body 11. Thus, during chemical dissolution-based linear debonding, excess chemical solvent can flow from the placement platform 12 through the support area 112 until it flows into the solvent collection tank 111.

[0132] In some embodiments, for the purpose of recycling and reusing chemical solvents; such as Figure 12 As shown, the solvent collection tank 111 is connected to the input end of the drive pump 41, so that the drive pump 41 can spray the chemical solvent flowing in the solvent collection tank 111 back onto the edge of the adhesive layer 011 through the nozzle 42. In a specific embodiment, the solvent collection tank 111 can be directly used as a reservoir for holding chemical solvents. That is, when performing linear debonding based on chemical dissolution, an appropriate amount of chemical solvent can be poured directly into the solvent collection tank 111, and then the chemical solvent in the solvent collection tank 111 can be sprayed out along the nozzle 42 by the drive pump 41. At the same time, the remaining chemical solvent after solvent dissolution can flow back to the solvent collection tank 111 to form a cycle.

[0133] In some embodiments, such as Figure 12As shown, the solvent spraying mechanism 4 also includes a solvent heater 43, which is used to heat the unsprayed chemical solvent. By heating the chemical solvent, the dissolution process of the adhesive layer 011 can be accelerated, and the adhesive layer 011 can also be appropriately heated and softened.

[0134] It is understood that there are various possible locations for the solvent heater 43. For example, the solvent heater 43 can be placed outside the pipeline 40 to heat the chemical solvent by heating the pipeline 40; the solvent heater 43 can also be placed inside the pipeline 40, so that the chemical solvent can flow into the solvent heater 43 along the pipeline 40, be heated, and then flow out; in this case, the solvent heater 43 can be placed at the input end of the drive pump 41 or at the output end of the drive pump 41, depending on the actual needs of those skilled in the art; the solvent heater 43 can also be placed at the lower part of the solvent collection tank 111, so that the chemical solvent in the solvent collection tank 111 can be heated directly by the solvent heater 43.

[0135] It should be understood that the solvent heater 43 can be heated in various ways, including by a reverse application of the Peltier effect, resistive semiconductor heating, or ceramic semiconductor heating. The specific implementation methods of the above-mentioned heating methods are common knowledge to those skilled in the art, and therefore will not be described in detail here. The specific heating method of the solvent heater 43 can be selected according to the actual needs of those skilled in the art.

[0136] Based on the aforementioned technical solutions, the wafer pair debonding device of this application can perform three debonding methods: heating-based wire debonding, chemical dissolution-based wire debonding, and wire cutting-based mechanical debonding. For ease of understanding, these three debonding methods will be described in detail below.

[0137] I. For heating-based wire bonding methods.

[0138] First, the wafer pair 01 to be debonded is placed in the positioning groove 123 of the placement stage 12. A vacuum is created in the groove 120 by the adsorption device 19, forming a negative pressure to adsorb and clamp the wafer pair 01. Then, the wafer pair 01 is heated to above the glass transition temperature of the adhesive layer 011, for example, above 200°C, using a heating device. If manual debonding is used, the placement stage 12 is adjusted to a set angle; if automatic debonding is used, the placement stage 12 is leveled. Finally, the dicing wire 200 is tensioned on the winding bracket 3, and the winding bracket 3 drives the dicing wire 200 to cut the adhesive layer 011 in a direction parallel to the wafer pair 01, thereby separating the two wafers 012 of the wafer pair 01 and achieving debonding.

[0139] II. For linear debonding methods based on chemical dissolution.

[0140] First, the wafer pair 01 to be debonded is placed in the positioning groove 123 of the placement stage 12. A vacuum is created in the groove 120 by the adsorption device 19, forming a negative pressure to adsorb and clamp the wafer pair 01. This debonding method is generally performed at room temperature. If heating is required, the wafer pair 01 can be heated to a suitable temperature using a heating device. If manual debonding is used, the placement stage 12 is adjusted to a set angle; if automatic debonding is used, the placement stage 12 is leveled. Then, the chemical solvent is continuously sprayed at a suitable speed through the nozzle 42 onto the edge of the adhesive layer 011 of the wafer pair 01 by the drive pump 41. Finally, the dicing wire 200 is tensioned on the winding bracket 3, and the winding bracket 3 drives the dicing wire 200 to cut the area of ​​the adhesive layer 011 soaked in the chemical solvent along a direction parallel to the wafer pair 01, thereby separating the two wafers 012 of the wafer pair 01 to achieve debonding. It should be noted that when placing wafer pair 01 between placement stages 12, the edges of the adhesive layer 011 can be dissolved and eliminated by pre-soaking the wafer pair 01 in a chemical solvent. This is more conducive to the subsequent wire bonding process.

[0141] III. Mechanical debonding method based on wire cutting.

[0142] First, the wafer pair 01 to be debonded is placed in the positioning groove 123 of the placement stage 12. A vacuum is created in the groove 120 by the adsorption device 19, forming a negative pressure to adsorb and clamp the wafer pair 01. This debonding method can be performed at room temperature or at low temperature. If cooling is required, a cooling device 13 can be installed on the worktable 1 to cool the wafer pair 01. If manual debonding is used, the placement stage 12 is adjusted to a set angle; if automatic debonding is used, the placement stage 12 is leveled. Finally, the dicing wire 200 is tensioned on the winding bracket 3, and the winding bracket 3 drives the dicing wire 200 to cut the adhesive layer 011 in a direction parallel to the wafer pair 01, thereby separating the two wafers 012 of the wafer pair 01 to achieve debonding. It should be noted that, in order to accelerate the debonding process, wafer pairs 01 can be placed between placement stages 12, and the edges of the adhesive layer 011 can be dissolved and eliminated by pre-soaking the wafer pairs 01 in a chemical solvent to form a thinning zone. Then, the dicing line 200 is cut along the thinning zone to achieve mechanical separation of the wafer pairs 01. Specifically, the dicing line 200 will cut along the wafer surface with the lowest adhesion to the adhesive 0111, or at the interface of the release layer of the adhesive 0111 to complete the debonding.

[0143] Understandably, in wire EDM-based mechanical debonding, the cooling device 13 can be installed in various locations, including on the machine body 11 or on the placement platform 12. The specific cooling methods of the cooling device 13 can be various, such as forced air cooling, liquid cooling, dry ice cooling, gas cooling, and RTA-type rapid cooling. For ease of understanding, forced air cooling will be used as an example for detailed explanation below.

[0144] One specific embodiment, such as 2 and Figure 3 As shown, the machine body 11 includes a platform 110 and a control unit. A vertical surface 116 perpendicular to the platform 110 can be formed on the side of the control unit near the platform 110. An air outlet 117 is provided on the vertical surface 116, and the height of the air outlet 117 is adapted to the height of the adhesive layer 011 of the wafer pair 01. The cooling device 13 preferably adopts an air-cooled method, that is, the cooling device 13 uses a cooling fan. The air duct of the cooling device 13 is preferably perpendicular to the first direction X of the dicing line 200.

[0145] It should be understood that the three debonding methods based on dicing lines 200 described above can be combined in practical applications. For example, a concave thinning region can be formed at the edge of the adhesive layer 011 of wafer pair 01 through physical contact of dicing lines 200 using a heating-based wire debonding method. Then, the wafer pair 01 can be rapidly cooled to room temperature using a cooling device 13, and then the wafer pair 01 can be debonded by cutting along the wafer surface with the lowest adhesion to the adhesive 0111, or at the release layer interface of the adhesive 0111, using a wire-cutting-based mechanical debonding method. The wafer pair debonding device of this application can simultaneously realize the functions of the three debonding methods based on dicing lines 200 described above, or it can realize only one or two debonding methods. In this case, the components corresponding to the unused wire debonding methods can be omitted, that is, only the components required for the actual application of the debonding method based on dicing lines 200 are prepared during production.

[0146] In some embodiments, the cutting wire 200 is made of one or more combinations of synthetic or natural polymer materials, metallic materials, ceramic or inorganic materials, and composite materials. Specifically, the cutting wire 200 can be made of monofilaments, multifilaments, or multifilaments of synthetic polymers, natural polymers, metals, ceramics, composite materials, or natural or synthetic polymers; it can also be made of various combinations of monofilaments, multifilaments, and multifilaments.

[0147] It should be understood that there are various combinations of the materials mentioned above. For ease of understanding, specific examples will be provided below for detailed explanation. In one example, the cutting wire 200 can be made of high-temperature resistant polymers such as: polyamide (nylon), fluorinated polymers such as polytetrafluoroethylene (Teflon, PTFE), polyimide (PI), polyetheretherketone (PEEK), aramid fibers (aramid 1414: Kevlar, Twaron, Taparan; aramid 1313: Nomex, Conex, Tametatar; aramid III: Armo; Teconora; Technora, etc.), polysulfone (PES, PPSU, PSU), polyetherimide (Ultem), polybenzimidazole (Celazole), and poly(p-phenylenebenzodioxazole) (Zylon). In another example, the cutting wire 200 can be made of high-temperature resistant SiCN, SiC, and C fibers. In one example, the cutting wire 200 can be made of other polymers such as polypropylene, polyethylene (including ultra-high molecular weight polyethylene), polyester, natural polymers (silk, etc.). In another example, the cutting wire 200 can also be made of monomers or combinations of copper, gold, silver, stainless steel, tungsten, molybdenum, metal alloys, etc.; a polymer can also be coated onto a metallic cutting wire 200 for cutting. In one example, the cutting wire 200 can also be lubricated or self-lubricating; the cutting wire 200 can be made of fluorinated materials, silicone, and polyolefins, etc.

[0148] In some embodiments, such as Figure 13 As shown, the cutting line 200 adopts one of the following structures: a sheet-like structure, a saw-like structure, or a linear structure. Specifically, for the linear structure cutting line 200, as shown... Figure 13 As shown in (a1), (a2), and (a3), the cross-sectional shape of the cutting line 200 can be one of a circle, an ellipse, and a triangle; of course, its cross-sectional shape can also be one of a rectangle or other polygons. For the cutting line 200 of the sheet-like structure, as... Figure 13 As shown in (b1), (b2), and (b3), the cross-sectional shape of the cutting line 200 can be rectangular or a combination of multiple circles and multiple rhombuses, that is, the contours at both ends of the cross-section of the cutting line 200 are straight, arc-shaped, or V-shaped. For the sawtooth structure cutting line 200, as shown in... Figure 13 As shown in (c), the cutting line 200 is generally sheet-shaped, and the side of the cutting line 200 that is used to contact the adhesive layer 011 has a uniformly distributed toothed structure along its length.

[0149] It should be understood that the saw-shaped cutting line 200 is generally a rigid structure; the linear cutting line 200 is generally a flexible structure; and the sheet-shaped cutting line 200 can be either a rigid or flexible structure. The specific shape of the cutting line 200 can be selected according to the actual needs of those skilled in the art. In this embodiment, a flexible linear or sheet-shaped structure is preferred for the cutting line 200. Specifically, the linear cutting line 200 can be obtained by winding a single filament or multiple filaments; the sheet-shaped cutting line 200 can be obtained by arranging multiple filaments into a single layer or multiple layers, or by winding multiple filaments and then flattening them.

[0150] In some embodiments, the thickness of the cutting line 200 is less than 10 times the thickness of the adhesive layer 011. Specifically, the thickness of the cutting line 200 can be less than or equal to the thickness of the adhesive layer 011, or it can be greater than the thickness of the adhesive layer 011; if the thickness of the cutting line 200 is greater than the thickness of the adhesive layer 011, then the thickness of the cutting line 200 should not exceed 10 times the thickness of the adhesive layer 011.

[0151] It is understandable that for a dicing line 200 with a thickness less than or equal to the adhesive layer 011, it can completely cut through the adhesive layer 011, meaning that a dicing line 200 of this thickness can be used for the three debonding methods mentioned above. For a dicing line 200 with a thickness greater than the adhesive layer 011, it cannot completely pass through the adhesive layer 011 and is generally used for mechanical debonding based on wire cutting; that is, the two wafers 012 of wafer pair 01 are separated by the squeezing and shearing forces generated by the dicing line 200 during the cutting process.

[0152] It should be noted that, based on its inherent physical properties, the flexible cutting wire 200 possesses the ability to undergo mechanical deformation, and its thickness may change before and after cutting. For example, the multi-filament cutting wire 200 is a linear structure with a circular cross-section before cutting. During the cutting process, due to tension and compression, the cutting wire 200 can flatten into a sheet-like structure, which reduces the thickness of the cutting wire 200 during the cutting process compared to before cutting.

[0153] In some embodiments, such as Figure 14 As shown in (a), there is one winding support 3, which can be in the shape of an arc, a U, or a "U". The cutting wire 200 can be tensioned at both ends of the winding support 3. Thus, when debonding wafer pair 01, the winding support 3 can be moved parallel to wafer pair 01 by hand or power source to achieve wire debonding.

[0154] In some embodiments, such as Figure 14As shown in (b), a pair of winding supports 3 are provided, and the cutting wire 200 is tensioned between the two winding supports 3. Thus, during the debonding of wafer pair 01, the winding supports 3 can be moved parallel to wafer pair 01 by hand or power source to achieve wire debonding.

[0155] It is understandable that the function of the winding bracket 3 is to tension the cutting wire 200 and to serve as a carrier for the movement of the cutting wire 200. Both of the above-mentioned uses of the winding bracket 3 can meet the requirements of this application. Considering that the cutting wire 200 needs to remain stable during movement, the technical solution of this application preferably uses a double winding bracket 3 as a carrier for the tensioning and movement of the cutting wire 200.

[0156] One specific embodiment, such as Figure 15 As shown, the winding support 3 includes a frame 31 and a take-up roller 32. If the placement table 12 is only used for automatic drive of wire bonding and debonding, such as... Figure 3 As shown, parallel grooves 114 are provided on both sides of the table 110 of the machine body 11, and the frame 31 can be slidably installed in the corresponding grooves 114. If the placement table 12 can be used for manual drive of wire bonding, the frame 31 can be slidably installed on the placement table 12 so that the winding bracket 3 can drive the dicing wire 200 to rotate synchronously with the placement table 12, thereby ensuring that the movement path of the dicing wire 200 is always parallel to the wafer pair 01 on the placement table 12. The take-up roller 32 is rotatably installed on the upper end of the frame 31, and the two ends of the dicing wire 200 are respectively wound around the take-up rollers 32 of the two winding brackets 3, thereby tensioning the dicing wire 200 through the two take-up rollers 32.

[0157] It is important to know that the tension of the cutting wire 200 can be adjusted manually or automatically. There are various methods for both manual and automatic tension adjustment of the cutting wire 200, which will be described in detail below through specific examples for ease of understanding.

[0158] In some embodiments, the two ends of the cutting wire 200 can be first wound around the take-up rollers 32 of the two winding supports 3, at which point the cutting wire 200 is in a slack state. Then, one take-up roller 32 can be fixed with fasteners, and the other take-up roller 32 can be manually rotated to tension the cutting wire 200. After tensioning the cutting wire 200, the other take-up roller 32 can also be fixed with fasteners. Alternatively, the two take-up rollers 32 can be manually driven to rotate in opposite directions to tension the cutting wire 200, and then both take-up rollers 32 can be fixed with fasteners simultaneously.

[0159] It is important to note that for the dicing wire 200 with a wafer structure, in order to ensure stable cutting of the adhesive layer 011 by the dicing wire 200, the flat extension direction of the dicing wire 200 needs to be parallel to the wafer pair 01. However, during the winding of the dicing wire 200, it is mainly wound flatly around the take-up roller 32, which may cause the dicing wire 200 to be difficult to maintain a parallel orientation to the wafer pair 01 after extending out of the take-up roller 32. Therefore, a guiding structure is needed to guide the part of the dicing wire 200 used for cutting to ensure that it remains horizontal with the wafer pair 01.

[0160] In some embodiments, such as Figure 16 and Figure 17 As shown, the winding support 3 also includes a guide frame 311, which is fixedly mounted on the upper end of the frame 31 and located on the wire exit side of the take-up roller 32. The guide frame 311 has a horizontally extending guide opening 3110 for the dicing wire 200 to pass through, so that the dicing wire 200 of the wafer structure remains parallel to the wafer pair 01 during the debonding process.

[0161] It is important to know that the width of the guide opening 3110, i.e., its height perpendicular to the extension direction, can be equal to the thickness of the cutting line 200. Considering that the cutting line 200 is a flexible material with a certain degree of deformation capability, meaning that the cutting line 200 can be appropriately compressed and flattened, the width of the guide opening 311 can also be less than the thickness of the cutting line 200. Considering that the thickness of the cutting line 200 made of multi-filament fibers can be reduced to about 10% of its natural thickness when flattened, in this embodiment, the width of the guide opening 311 can be set to 10% to 100% of the thickness of the cutting line 200. The extension length of the guide opening 3110 must be greater than or equal to the width of the cutting line 200; that is, the narrower the width of the guide opening 3110, the longer the extension length needs to be, and vice versa. However, the change between the two is not necessarily linear. Specifically, when flattening the multi-filament cutting line 200, the density of the cutting line 200 will increase, that is, the cross-sectional area after flattening will decrease, or in other words, the flattened cutting line 200 will be more compact.

[0162] In some embodiments, such as Figure 16 As shown, a first rotary driver 33 can be installed on the frame 31 of at least one winding bracket 3. The output end of the first rotary driver 33 is connected to the take-up roller 32, so that the take-up roller 32 and the first rotary driver 33 cooperate to form an automatic winding device. The two ends of the cut wire 200 are respectively wound around the take-up rollers 32 corresponding to the two winding brackets 3; then the automatic winding device tensions the cut wire 200 by rotating and winding the cut wire 200.

[0163] Understandably, in a scenario where only one winding bracket 3 has the first rotary driver 33 installed, the cutting wire 200 is in a slack state after the winding of both ends is completed. At this time, the take-up roller 32 on the winding bracket 3 without the first rotary driver 33 can be fixed, and then the corresponding take-up roller 32 can be rotated by driving the first rotary driver 33 to wind the cutting wire 200 and tighten it. In a scenario where both winding brackets 3 have the first rotary driver 33 installed, the cutting wire 200 is in a slack state after the winding of both ends is completed. At this time, it is only necessary to control the two first rotary drivers 33 to drive the corresponding take-up rollers 32 to rotate in opposite directions to wind the two ends of the cutting wire 200 respectively to achieve tension.

[0164] It should be noted that when tensioning the cutting wire 200, if the tension is too low, the debonding process may not proceed smoothly, while if the tension is too high, the cutting wire 200 may break during the debonding process. Therefore, when tensioning the cutting wire 200, it is necessary to ensure that the tension is within a suitable range.

[0165] To ensure proper tension of the cutting wire 200, in some embodiments, a pressure sensor (not shown) can be installed on the winding bracket 3. The pressure sensor is used to identify the tension of the cutting wire 200. The pressure sensor can be installed in several locations, either between the output end of the first rotary driver 33 and the take-up roller 32, or directly on the side wall of the take-up roller 32, meaning the cutting wire 200 is directly wound around the pressure sensor.

[0166] It should be noted that, as mentioned above, the translational unbonding methods of the cutting wire 200 mainly include two types: unidirectional translation and reciprocating sawing motion. For unidirectional translation, it is only necessary to ensure that the cutting wire 200 is tensioned and then drives the winding bracket 3 to translate in the first direction X. As for the reciprocating sawing motion of the cutting wire 200, when the winding bracket 3 drives the cutting wire 200 to translate in the first direction X, the reciprocating movement of the cutting wire 200 along the second direction Y can be achieved by an automatic winding device. For ease of understanding, the following will provide a detailed explanation of how the reciprocating movement of the cutting wire 200 along the second direction Y is achieved by an automatic winding device.

[0167] In some embodiments, such as Figure 16As shown in (a), a first rotary driver 33 is mounted on one of the winding brackets 3 and connected to a take-up roller 32 to form an automatic take-up device; the take-up roller 32 on the other winding bracket 3 is elastically rotatably mounted on the frame 31 via a first elastic element (not shown); the specific type of the first elastic element can be various, such as a torsion spring or a spring sheet, and can be selected according to the actual needs of those skilled in the art. In this embodiment, the first elastic element is preferably a torsion spring. The two ends of the cutting wire 200 are respectively wound around the automatic take-up device and the take-up roller 32; the automatic take-up device drives the cutting wire 200 to reciprocate and translate by reciprocating rotation.

[0168] It should be understood that the specific structure and working principle of the first rotary actuator 33 are well known to those skilled in the art. Common first rotary actuators 33 include motors, rotary cylinders and rotary hydraulic cylinders, etc. In this embodiment, a motor is preferred.

[0169] It is important to note that, in order to ensure appropriate tension of the cutting wire 200, the range of change in the elastic force of the torsion spring, which serves as the first elastic element, needs to be within the tension range of the cutting wire 200. Specifically, assuming the tension range of the cutting wire 200 is [F1, F2], then during the tensioning of the cutting wire 200, the automatic winding device can drive the corresponding winding roller 32 to rotate via the first rotary driver 33. In the initial driving phase of the first rotary driver 33, the winding roller 32 connected to the torsion spring can tend to remain stationary under the elastic force of the torsion spring, thereby allowing the cutting wire 200 to gradually tighten. When the tension of the cutting wire 200 reaches F1, the position of the winding roller 32 connected to the torsion spring can be denoted as A; subsequently, as the first rotary driver 33 continues to rotate, the winding roller 32 connected to the torsion spring will rotate under the traction of the cutting wire 200 until the tension of the cutting wire 200 reaches F2, at which point the position of the winding roller 32 connected to the torsion spring can be denoted as B. The reciprocating rotation of the first rotary driver 33 drives the take-up roller 32, connected to the torsion spring, to reciprocate between positions A and B, thereby ensuring that the cutting line 200 achieves reciprocating translation in the second direction Y while meeting the tension requirement. Alternatively, the unidirectional rotation of the first rotary driver 33 drives the take-up roller 32, connected to the torsion spring, to rotate unidirectionally between positions A and B, thereby ensuring that the cutting line 200 achieves unidirectional translation in the second direction Y while meeting the tension requirement.

[0170] In some embodiments, such as Figure 16As shown in (b), both winding supports 3 are equipped with automatic winding devices, and both ends of the cutting wire 200 are wound around the winding rollers 32 of the two automatic winding devices. When tensioning the cutting wire 200, the tension can be achieved by keeping the first rotary drive 33 of one automatic winding device stationary while rotating the first rotary drive 33 of the other automatic winding device; alternatively, the first rotary drives 33 of the two automatic winding devices can be controlled to rotate in opposite directions to tension the cutting wire 200. After tensioning the cutting wire 200, the first rotary drives 33 of the two automatic winding devices can be controlled to rotate synchronously in the same direction, thereby driving the cutting wire 200 to reciprocate along the second direction Y. Alternatively, after tensioning the cutting wire 200, the first rotary drives 33 of the two automatic winding devices can be controlled to rotate synchronously in the same direction in one direction, thereby driving the cutting wire 200 to move unidirectionally along the second direction Y.

[0171] In some embodiments, such as Figure 18 As shown, the wafer debonding apparatus of this application also includes a displacement mechanism 34 mounted on the worktable 1. The displacement mechanism 34 is connected in cooperation with the winding support 3, and the displacement mechanism 34 is used to drive the winding support 3 to move. That is, the displacement mechanism 34 can drive the winding support 3 to move under the drive of an additional power source to drive the cutting wire 200 to debond.

[0172] It is understood that the displacement mechanism 34 can simultaneously drive the two winding supports 3 to move, or the two winding supports 3 can be respectively installed on their corresponding displacement mechanisms 34, and the two displacement mechanisms 34 drive the cutting wire 200 to move through synchronous movement. To ensure the stable movement of the cutting wire 200, in this embodiment, it is preferable to use two displacement mechanisms 34 to synchronously drive the two winding supports 3 respectively. There are various specific driving methods for the displacement mechanism 34 to drive the winding supports 3, such as pneumatic drive, hydraulic drive, or linear motor drive; considering that pneumatic drive and hydraulic drive require additional air and hydraulic sources, in this embodiment, it is preferable to use linear motor drive for the displacement mechanism 34.

[0173] In a specific embodiment, such as Figure 18As shown, the displacement mechanism 34 includes a second rotary driver 341, a lead screw 342, a slider 343, and a mounting base 344. The mounting base 344 can be fixedly installed inside the body 11 to provide a mounting structure for the entire displacement mechanism 34. The second rotary driver 341 is detachably fixedly installed at one end of the mounting base 344. The lead screw 342 is rotatably installed along the extension direction of the mounting base 344, and one end of the lead screw 342 is drivenly connected to one end of the second rotary driver 341, so that the lead screw 342 can rotate under the drive of the second rotary driver 341. The slider 343 is fitted onto the lead screw 342. The upper end face of the slider 343 can be detachably fixedly connected to the frame 31 of the winding bracket 3. At the same time, the lower end face of the slider 343 can be guided and fitted with the mounting base 344. That is, the mounting base 344 can restrict the rotation of the slider 343 around the lead screw 342. Thus, when the lead screw 342 rotates, the slider 343 can drive the winding bracket 3 to move along the axial direction of the lead screw 342.

[0174] It is understandable that the displacement mechanism 34 can drive the winding bracket 3 to realize the translation of the cutting wire 200 along the first direction X; then, if the winding bracket 3 is not equipped with an automatic winding device, or if the equipped automatic winding device is only used for tensioning the cutting wire 200, the displacement mechanism 34 can also drive the cutting wire 200 to reciprocate along the second direction Y while driving the cutting wire 200 to translate along the first direction X.

[0175] In some embodiments, such as Figure 19 As shown, the displacement mechanism 34 includes a first displacement device 34a and a second displacement device 34b connected by a drive, and the driving directions of the first displacement device 34a and the second displacement device 34b are perpendicular. Specifically, the first displacement device 34a drives the winding bracket 3 to move the cutting wire 200 in a translational direction, and the second displacement device 34b drives the winding bracket 3 to move the cutting wire 200 in a reciprocating translational direction.

[0176] It is understood that the first displacement device 34a and the second displacement device 34b are preferably driven by linear motors, and their specific structures can be referred to the foregoing description. Specifically, the second displacement device 34b is located above the first displacement device 34a; the second displacement device 34b is mounted on the slider 343 of the first displacement device 34a via a mounting base 344, and the winding bracket 3 is mounted on the slider 343 of the second displacement device 34b via a frame 31.

[0177] In some embodiments, such as Figure 2As shown, the wafer pair debonding apparatus of this application also includes a gripping mechanism 5 mounted on the worktable 1. The gripping mechanism 5 grips the wafer 012 located on the upper layer of the wafer pair 01 through the gripping end. The gripping mechanism 5 can drive the gripped wafer 012 to perform translation or rotation parallel to the wafer pair 01, so as to complete the separation of the two debonded wafers 012.

[0178] It should be understood that, since the surface of wafer 012 is a high-precision surface, after the wafer is debonded to 01, a dedicated gripping mechanism 5 is needed to pick it up to avoid scratches or contamination on the surface of wafer 012. Generally, there are various gripping methods for picking up wafer 012, including negative pressure adsorption, negative pressure suction, and force-controlled clamping; considering the limited installation space of the worktable 1, negative pressure adsorption is preferred in this embodiment.

[0179] It should be noted that, through the gripping mechanism 5, the wafer pair debonding device of this application can also be used for hot-slip debonding. Specifically, during debonding, after heating the wafer pair 01 fixed on the stage 12 to above the glass transition temperature of the adhesive layer 011 using a heating device, the adhesive layer 011 of the wafer pair 01 can be further cut using the dicing wire 200. When the dicing wire 200 has partially cut the adhesive layer 011, such as when the cutting depth reaches 50% to 80% of the diameter of the wafer pair 01, the gripping mechanism 5 can adsorb and apply pulling force to the wafer 012 on top of the wafer pair 01, thereby pulling off or sliding off the remaining adhesive layer 011 of the wafer pair 01 to achieve debonding of the wafer pair 01. This method is faster than the heating-based wire debonding method.

[0180] Simultaneously, during the online debonding process, the gripping mechanism 5 can also maintain gripping of the upper wafer 012 of wafer pair 01 to improve the structural stability of wafer pair 01 during online debonding. Especially in the later stages of the online debonding process, since most of the adhesive layer 011 is removed, the upper wafer 012 of wafer pair 01 may tilt downwards under the action of gravity, causing wafer 012 to come into contact with the dicing line 200 and cause surface damage. Therefore, during the online debonding process, the upper wafer 012 of wafer pair 01 can be gripped by the gripping mechanism 5, and the lower wafer 012 of wafer pair 01 can be adsorbed by negative pressure by the adsorption device 19.

[0181] In some embodiments, such as Figure 20As shown, the gripping mechanism 5 includes an adsorption component 52 and a drive arm 51. The drive arm 51 is movably mounted on the side of the worktable 1, and the adsorption component 52 is mounted on the drive arm 51. The adsorption component 52 is used to perform negative pressure adsorption on the wafer 012 located on the upper layer of wafer pair 01, and the drive arm 51 is used to drive the adsorption component 52 and the adsorbed wafer 012 to move.

[0182] It is understandable that in portable scenarios, the drive arm 51 generally adopts a straight arm structure; while in automated mass production scenarios, the drive arm 51 can adopt a straight arm structure or a robotic arm. In this embodiment, a straight arm structure is preferred. In portable scenarios, the drive arm 51 moves the adsorption component 52 in two ways: manual drive and power source drive. The manual drive method is only suitable for portable scenarios, while the power source drive method is suitable for both portable and automated mass production scenarios. For ease of understanding, the two drive methods of the drive arm 51—manual drive and power source drive—will be described in detail below.

[0183] In one specific embodiment, if the placement stage 12 is only used for automatic driving of wire bonding, such as Figure 3 As shown, a mounting groove 115 is provided on the side of the platform 110 of the machine body 11. (As indicated...) Figure 20 As shown, the drive arm 51 includes a connecting arm 511, which is parallel to the wafer pair 01. The connecting arm 511 has a rotating shaft 512 at its first end, perpendicular to the extension direction. The connecting arm 511 is rotatably mounted on the mounting groove 115 via the rotating shaft 512. The adsorption assembly 52 is mounted on the second end of the connecting arm 511. The connecting arm 511 can be manually driven to move the adsorption assembly 52 along with the adsorbed wafer 012 by rotating the rotating shaft 512 around the mounting groove 115. If the placement stage 12 can be used for manual drive of wire bonding, the connecting arm 511 can be rotatably mounted on the placement stage 12 via the rotating shaft 512 at its first end, so that even after the placement stage 12 rotates a certain angle relative to the stage surface 110, the connecting arm 511 can still drive the adsorption assembly 52 to adsorb the wafer 012 on the upper layer of the wafer pair 01.

[0184] In a specific embodiment, such as Figure 23 As shown, based on the aforementioned structure where the drive arm 51 performs manual drive, the drive arm 51 further includes a third rotary actuator 513. The third rotary actuator 513 can be fixedly set and connected to the rotating shaft 512 through its output end, or directly connected to the first end of the connecting arm 511 through its output end. After debonding is completed, the third rotary actuator 513 can drive the connecting arm 511 to move the adsorption assembly 52 along with the adsorbed wafer 012.

[0185] It should be understood that the specific structure and working principle of the third rotary actuator 513 are well known to those skilled in the art. Common third rotary actuators 513 include motors, rotary cylinders and rotary hydraulic cylinders, etc. In this embodiment, a motor is preferably used for the third rotary actuator 513.

[0186] It is important to know that the adsorption component 52 is generally positioned to adsorb wafer pair 01. To avoid interference during the placement of wafer pair 01, the adsorption component 52 is typically moved to one side of the placement stage 12 via the connecting arm 511 before placing wafer pair 01. After placing wafer pair 01, the adsorption component 52 is then moved to the corresponding position via the connecting arm 511. Therefore, to ensure the smooth movement of the adsorption component 52, as follows... Figure 21 As shown in (a), the adsorption component 52 is generally higher than the upper surface of the wafer pair 01. The specific spacing distance D can be selected according to the actual needs of those skilled in the art. For example, the spacing distance D can be 3mm or 5mm.

[0187] After the adsorption component 52 reaches the predetermined position, such as Figure 21 As shown in (b), the adsorption component 52 needs to be moved down to at least the upper surface of the wafer pair 01, and then adsorb the wafer 012 on the upper layer of the wafer pair 01 through negative pressure adsorption, thereby assisting the wire debonding process. After the wire debonding is completed, as shown in (b), Figure 22 As shown, the connecting arm 511 can drive the adsorption component 52 to move to the side of the placement stage 12, so that the adsorption component 52 can drive the adsorbed wafer 012 to move synchronously, so that the two wafers 012 in the debonding state can separate from each other.

[0188] As can be seen from the working process of the adsorption component 52 described above, in order to ensure that the adsorption component 52 can successfully adsorb the wafer 012, the adsorption end of the adsorption component 52 needs to be able to move along the axial direction of the wafer relative to 012. There are two ways to achieve the movement of the adsorption end of the adsorption component 52: manual drive and power source drive. The manual drive method is only suitable for portable applications, while the power source drive method is suitable for both portable applications and automated mass production applications. For ease of understanding, the manual drive method and the power source drive method for moving the adsorption end of the adsorption component 52 will be described in detail below.

[0189] In a specific embodiment, such as Figure 20As shown, the adsorption assembly 52 includes a suction cup 521 and a second elastic element. The suction cup 521 is slidably mounted on the second end of the drive arm 51 along the axial direction of the wafer pair 01 via a guide rod 522. The guide rod 522 and the drive arm 51 are connected by the second elastic element. The second elastic element can be of various types, such as a spring 523 and a spring sheet, etc. In this embodiment, a spring 523 is preferred. When the adsorption assembly 52 adsorbs the wafer pair 01, the adsorption assembly 52 can be moved above the center of the wafer pair 01. Then, by manually pressing the guide rod 522, the suction cup 521 is driven to move down to contact the wafer 012 on the upper layer of the wafer pair 01, and then the wafer 012 on the upper layer of the wafer pair 01 is adsorbed by the suction cup 521, which serves as the adsorption end.

[0190] In a specific embodiment, such as Figure 23 As shown, the adsorption assembly 52 includes a suction cup 521 and a telescopic actuator 524. The telescopic actuator 524 is fixedly mounted to the second end of the drive arm 51 via a mounting bracket 525, and the suction cup 521 is mounted along the axial direction of the wafer pair 01 on the drive end of the telescopic actuator 524. The telescopic actuator 524 can be driven in various ways, such as pneumatic drive, hydraulic drive, and motor drive; in this embodiment, pneumatic drive is preferred. When the adsorption assembly 52 adsorbs the wafer pair 01, the adsorption assembly 52 can be moved above the center of the wafer pair 01. Then, the suction cup 521, acting as the adsorption end, can move towards the upper surface of the wafer pair 01 under the drive of the telescopic actuator 524 until the suction cup 521 contacts and adsorbs the upper wafer 012 of the wafer pair 01. It should be noted that when using the telescopic driver 524 to move the chuck 521, in order to avoid excessive pressure on the wafer pair 01 caused by the chuck 521, which could lead to damage to the wafer pair 01, a pressure sensor needs to be installed between the chuck 521 and the drive end of the telescopic driver 524. The pressure sensor can identify the pressure applied to the wafer pair 01 by the chuck 521 and perform feedback control.

[0191] It is understandable that, in the two specific embodiments described above, the specific number of suction cups 521 can be selected based on the structure of wafer 012 in wafer pair 01. Specifically, the structure type of device wafer 0122 in wafer pair 01 can be a monolithic structure, such as in board-level packaging applications; or it can be a modular structure, such as in fan-out wafer-level packaging applications. For the monolithic device wafer 0122, it has higher structural rigidity; while for the modular device wafer 0122, it is mainly bonded by molding materials, which results in weaker structural rigidity and may flexibly bend during gripping.

[0192] Therefore, during the wafer pair 01 debonding process, it is assumed that device wafer 0122, as the upper layer of wafer pair 01, is engaged with chuck 521. Then, for the monolithic device wafer 0122, the number of chucks 521 could be as follows: Figure 22 One shown; or it can be as shown Figure 24 The number of suction cups 521 shown can be determined based on the size of the suction cups 521 and the structure of the device wafer 0122. Multiple suction cups 521 can be evenly distributed along the circumference of the wafer pair 01 to ensure a relatively uniform gripping force on the wafer pair 01. For the modular device wafer 0122, the corresponding number of suction cups 521 is as follows: Figure 24 The number of suction cups 521 shown can be determined based on the size of the suction cups 521 and the structure of the device wafer 0122. Multiple suction cups 521 can be evenly distributed along the circumference of the wafer pair 01 to ensure that the wafer pair 01 receives a relatively uniform gripping force, thereby ensuring that the flexible device wafer 0122 can be stably gripped. For a single suction cup 521, it can be directly mounted on the drive arm 51; for multiple suction cups 521, there are various mounting methods, which will be explained in detail below through a specific example.

[0193] In a specific example, such as Figure 24 As shown, four suction cups 521 are provided for gripping wafer 012 on the upper layer of wafer 01. The four suction cups 521 are evenly distributed circumferentially around the second end of the drive arm 51. The adsorption assembly 52 also includes a connecting frame 526, which can be circular or cross-shaped. Taking the cross-shaped connecting frame 526 as an example, the four suction cups 521 are correspondingly installed on each extension end of the connecting frame 526. Specifically, taking the manual pressing method of the suction cups 521 as an example, each suction cup 521 can be slidably installed on each extension end of the connecting frame 526 via a guide rod 522, and the extension end and the guide rod 522 are also connected by a spring 523; or the entire connecting frame 526 can be slidably installed on the second end of the drive arm 51 via the guide rod 522, and the drive arm 51 and the guide rod 522 are connected by a spring 523. Taking the automatic pressing method of the suction cup 521 as an example, each extension end of the connecting frame 526 may be equipped with a telescopic driver 524 for connecting the corresponding suction cup 521, and the telescopic driver 524 may be directly connected to the suction cup 521 through the driving end; or a telescopic driver 524 may be installed at the second end of the entire driving arm 51, and the telescopic driver 524 may be directly connected to the connecting frame 526 through the driving end.

[0194] It's important to understand that when the chuck 521 adsorbs the wafer 012 on top of wafer 01, it can do so either by directly pressing down on the wafer 012 after contact, or by using vacuum adsorption. For the former method, after moving the wafer 012, manual separation from the chuck 521 is often necessary. For the latter method, the adsorbed wafer 012 can be automatically separated from the chuck 521 by venting. The former method is only suitable for portable applications, while the latter is applicable to both portable and automated mass production scenarios. For clarity, a specific example will be provided below to illustrate the latter method.

[0195] One example is, Figure 23 As shown, the adsorption assembly 52 also includes an air pump (not shown); the air pump can be installed inside the body 11 or outside the body 11, depending on actual needs. The suction cup 521 is connected to the output end of the telescopic actuator 524 via a hollow connecting sleeve 5211. The connecting sleeve 5211 communicates with the suction cup 521, and an air pipe interface 5212 is connected to one side of the connecting sleeve 5211. The working end of the air pump can be connected to the air pipe interface 5212 via an air pipe, thereby connecting the working end of the air pump to the suction cup 521. When it is necessary to adsorb the wafer 012, the air pump can evacuate the suction cup 521 to achieve vacuum adsorption; when it is necessary to release the wafer 012, the air pump can expel air from the suction cup 521 to drive the suction cup 521 to separate from the wafer 012.

[0196] In some embodiments, such as Figure 2 As shown, a protective cover 14 is rotatably mounted on one side of the workbench 1 to protect the wafer pair 01 from debonding. That is, the protective cover 14 can cover the entire workbench 110. To facilitate observation of the wafer pair 01 debonding process, the protective cover 14 can be made of a transparent material, such as acrylic sheet, transparent organic sheet, tempered glass, etc. To prevent the chemical solvents sprayed by the solvent spraying mechanism 4 from corroding the protective cover 14, a corrosion-resistant material must be selected for the protective cover 14. To prevent the protective cover 14 from interfering with the airflow of the cooling device 13 when covering the workbench 110, an air inlet 140 can be provided on the side of the protective cover 14 near the vertical surface 116. When the protective cover 14 covers the workbench 110, the air inlet 140 can direct the air outlet 117 on the vertical surface 116.

[0197] In some embodiments, such as Figure 2As shown, the wafer pair debonding apparatus of this application also includes a control screen 15 installed on the worktable 1; the machine body 11 includes a table surface 110 and a control unit, and the control screen 15 can be set in the control unit. The control screen 15 controls the debonding process of the wafer pair 01 through a built-in control system. Specifically, the control screen 15 can control and display parameters such as the tension of the dicing wire 200, the moving speed of the dicing wire 200, the spray flow rate of the solvent spraying mechanism 4, and the heating temperature of the heating device; the specific control program is well known to those skilled in the art, and therefore will not be described in detail here. The vacuum pressure of the adsorption device 19 during the adsorption process can also be displayed by setting a vacuum pressure gauge 18 in the control unit.

[0198] In some embodiments, such as Figure 2 As shown, the wafer pair debonding device of this application also includes an alarm light 16 and an emergency stop button 17 installed on the workbench 1; the alarm light 16 and the emergency stop button 17 can be specifically installed on the side of the control unit. The alarm light 16 is used to alarm for faults occurring during the debonding process of the wafer pair 01; the emergency stop button 17 is used to stop the wafer pair 01 debonding device.

[0199] Understandably, during the debonding process of the dicing wire 200, if the tension of the dicing wire 200 is too low or too high, the heating temperature of the heating device is too high or too low, or the vacuum pressure of the adsorption device 19 is insufficient, the debonding process of the wafer to O1 will be abnormal. In this case, an alarm can be triggered by the alarm light 16 to remind the operator. For abnormal situations that will seriously affect debonding and are difficult or impossible to correct through the control panel 15, the entire device can be stopped by the emergency stop button 17 to ensure that the abnormal situation does not spread.

[0200] The basic principles, main features, and advantages of this application have been described above. Those skilled in the art should understand that this application is not limited to the above embodiments. The embodiments and descriptions in the specification are merely the principles of this application. Various changes and modifications can be made to this application without departing from its spirit and scope, and all such changes and modifications fall within the scope of the claims. The scope of protection claimed by this application is defined by the appended claims and their equivalents.

Claims

1. A wafer pair debonding device, characterized in that, include: A worktable; the worktable is used to place and fix the wafer pair to be debonded; the wafer pair is bonded by an adhesive layer; A winding bracket; the winding bracket is slidably mounted on the worktable, and there is a pair of winding brackets; each winding bracket is provided with a guide frame, and the guide frame is provided with a guide opening extending horizontally for the cutting wire to pass through, so that the cutting wire remains parallel to the wafer pair during the debonding process; Cutting wire; the cutting wire is mounted on the worktable via the winding bracket and aligned with the adhesive layer of the wafer pair; the cutting wire is tensioned between the two winding brackets so that the cutting wire is always in a straight state; as well as A displacement mechanism is installed on the worktable and is connected to the winding bracket. The displacement mechanism is used to drive the winding bracket to move. The displacement mechanism is driven manually or by a power source to move the dicing line parallel to the wafer pair. The dicing line moves through the adhesive layer of the wafer pair to debond the wafers.

2. The wafer pairing and debonding apparatus as described in claim 1, characterized in that, The cutting line is translated along a first direction parallel to the wafer pair.

3. The wafer pairing and debonding apparatus as described in claim 1, characterized in that, The cutting line is translated along a first direction parallel to the wafer pair, and at the same time, the cutting line is reciprocated or translated unidirectionally along a second direction parallel to the wafer pair. The first direction and the second direction are perpendicular to each other.

4. The wafer pairing and debonding apparatus as described in claim 1, characterized in that, The first end of the cutting line is fixed in position, and the cutting line rotates around the first end in the direction parallel to the wafer pair.

5. The wafer pairing and debonding apparatus as described in claim 1, characterized in that, The dicing line and the wafer pair are adapted to perform relative unidirectional continuous rotation around the geometric center of the wafer pair, and the distance between the dicing line and the geometric center of the wafer pair gradually decreases during the debonding process.

6. The wafer pairing and debonding apparatus as described in claim 1, characterized in that, The dicing line and the wafer pair are adapted to reciprocate at a set angle, and the distance between the dicing line and the geometric center of the wafer pair gradually changes during the debonding process.

7. The wafer pairing and debonding apparatus as described in claim 1, characterized in that, The thickness of the cutting line is less than 10 times the thickness of the adhesive layer.

8. The wafer pairing and debonding apparatus as described in claim 1, characterized in that, The material of the cutting line is one or a combination of synthetic or natural polymer materials, metallic materials, ceramic or inorganic materials, and composite materials.

9. The wafer pair debonding apparatus as described in claim 8, characterized in that, The cutting line adopts a rigid structure and is generally in the shape of a sheet or saw.

10. The wafer pair debonding apparatus as described in claim 8, characterized in that, The cutting wire adopts a flexible structure and is either linear or sheet-like in shape. For linear cutting wires, it is suitable to be obtained by winding single or multiple filaments, and for sheet-like cutting wires, it is suitable to be obtained by winding multiple filaments and then flattening them.

11. The wafer pair debonding apparatus as described in claim 10, characterized in that, The winding bracket is bow-shaped, and the cutting wire is tensioned at both ends of the winding bracket.

12. The wafer pairing and debonding apparatus as described in claim 1, characterized in that, At least one of the winding supports is equipped with an automatic winding device, and the end of the cut wire is wound around the automatic winding device. The automatic winding device tensions the cutting wire by rotating and winding it.

13. The wafer pairing and debonding apparatus as described in claim 12, characterized in that, The automatic winding device is mounted on one of the winding supports, and a winding roller is rotatably mounted on the other winding support via a first elastic element; The two ends of the cutting line are respectively wound around the automatic winding device and the winding roller; the automatic winding device drives the cutting line to reciprocate or move in one direction by rotating.

14. The wafer pairing and debonding apparatus as described in claim 12, characterized in that, The automatic winding device is installed on both of the winding supports; The cutting line can be tensioned by keeping one of the automatic winding devices stationary and rotating the other, or by rotating the two automatic winding devices in opposite directions. The two automatic winding devices rotate synchronously in the same direction to drive the cutting line to reciprocate or move in one direction.

15. The wafer pair debonding apparatus as described in claim 12, characterized in that, A pressure sensor is installed on the winding bracket, and the pressure sensor is used to identify the tension of the cutting wire.

16. The wafer pair debonding apparatus as described in claim 1, characterized in that, The displacement mechanism is driven by one of the following methods: pneumatic drive, hydraulic drive, or electric motor drive.

17. The wafer pair debonding apparatus as described in claim 16, characterized in that, The displacement mechanism includes a first displacement device and a second displacement device connected by a drive, and the driving directions of the first displacement device and the second displacement device are perpendicular. The first displacement device drives the winding bracket to move the cutting wire in a first direction, and the second displacement device drives the winding bracket to move the cutting wire in a second direction.

18. The wafer pair debonding apparatus as described in claim 16, characterized in that, There are two displacement mechanisms, and the two winding brackets are respectively installed on the corresponding displacement mechanisms, and the two displacement mechanisms move synchronously.

19. The wafer pair debonding apparatus according to any one of claims 1-18, characterized in that, The workbench includes: Organism; Placement stage; the placement stage is mounted on the machine body, and the wafer pairs to be debonded are placed on the placement stage; and Clamping device; the clamping device is used to position and clamp the wafer pairs placed on the placement stage.

20. The wafer pair debonding apparatus as described in claim 19, characterized in that, The upper surface of the placement stage is provided with evenly distributed grooves, which are connected to the lower surface of the placement stage through a connection port; the wafers to be debonded are placed on the upper surface of the placement stage and cover the grooves. The clamping device is an adsorption device, which is installed inside the machine body and connected to the connection port through the working port. The adsorption device is used to evacuate the groove.

21. The wafer pair debonding apparatus as described in claim 19, characterized in that, The placement platform is rotatably mounted on the body via one-sided damping; or, a rotating device mounted on the body is driven to one side of the placement platform. The placement platform is adapted to rotate vertically within a range of 0 to 180° around the machine body.

22. The wafer pair debonding apparatus as described in claim 19, characterized in that, The worktable also includes a heating device, which is installed on the placement stage and is used to heat the wafer pairs to be debonded placed on the placement stage.

23. The wafer pair debonding apparatus as described in claim 22, characterized in that, The worktable also includes a cooling device, which is installed on the machine body or the placement stage. The cooling device is used to cool down the wafer pairs to be debonded placed on the placement stage.

24. The wafer pair debonding apparatus as described in claim 19, characterized in that, The wafer pair debonding apparatus further includes a solvent spraying mechanism for spraying chemical solvents onto the wafer pairs to be debonded placed on the worktable; the chemical solvents are used to dissolve the adhesive layer at the edge of the wafer pairs, and the dicing line is adapted to cut along the dissolved position of the adhesive layer.

25. The wafer pair debonding apparatus as described in claim 24, characterized in that, The solvent spraying mechanism includes: A liquid reservoir; the liquid reservoir is used to hold the chemical solvent; Nozzle; the nozzle is mounted on the side of the worktable and faces the adhesive layer of the wafer pair; and A drive pump; the input and output ends of the drive pump are respectively connected to the reservoir and the nozzle, and the drive pump is used to pump the chemical solvent in the reservoir to the nozzle for spraying to the edge of the adhesive layer.

26. The wafer pair debonding apparatus as described in claim 25, characterized in that, The nozzles are provided in multiple locations, and the multiple nozzles are arranged at equal intervals along the circumferential direction of the wafer pair.

27. The wafer pair debonding apparatus as described in claim 25, characterized in that, A solvent collection tank is provided on the side of the workbench, which is used to collect the sprayed chemical solvent; the solvent collection tank is connected to the input end of the drive pump.

28. The wafer pair debonding apparatus as described in claim 25, characterized in that, The solvent spraying mechanism also includes a solvent heater for heating the unsprayed chemical solvent.

29. The wafer pair debonding apparatus as claimed in claim 1, characterized in that, The wafer debonding device also includes a gripping mechanism mounted on the worktable; The gripping mechanism grips the wafer located on top of the wafer pair via its gripping end. The gripping mechanism is used to drive the gripped wafer to perform translation or rotation parallel to the wafer pair.

30. The wafer pair debonding apparatus as described in claim 29, characterized in that, The grasping mechanism includes: A drive arm; the drive arm is movably mounted on the side of the worktable; and Adsorption assembly; the adsorption assembly is mounted on the drive arm; The adsorption component is used to adsorb the wafer located on the upper layer of the wafer pair, and the driving arm is used to move the adsorption component.

31. The wafer pairing and debonding apparatus as described in claim 30, characterized in that, The drive arm includes a connecting arm, which is configured to be parallel to the wafer pair. The connecting arm is rotatably mounted on the worktable via a first end, and the adsorption assembly is mounted on the second end of the connecting arm.

32. The wafer pairing and debonding apparatus as described in claim 31, characterized in that, The drive arm also includes a rotary driver, which is fixedly mounted on the worktable and connected to the first end of the connecting arm via a drive end. The rotary driver is used to drive the connecting arm to move the adsorption assembly.

33. The wafer pair debonding apparatus as described in claim 30, characterized in that, The adsorption component includes: The suction cup; the suction cup is slidably mounted on the second end of the drive arm along the axial direction of the wafer pair via a guide rod; and The second elastic element; the guide rod and the drive arm are connected by the second elastic element. The initial height of the suction cup is located above the wafer pair, and the suction cup is driven to adsorb the wafer located on the upper layer of the wafer pair by pressing the guide rod.

34. The wafer pair debonding apparatus as described in claim 30, characterized in that, The adsorption component includes: Telescopic actuator; the telescopic actuator is fixedly mounted on the second end of the drive arm; and A suction cup; the suction cup is mounted on the drive end of the telescopic driver along the axial direction of the wafer pair; The initial height of the suction cup is located above the wafer pair, and the telescopic actuator is used to drive the suction cup to approach and adsorb the wafer located on the upper layer of the wafer pair.

35. The wafer pair debonding apparatus as described in claim 33, characterized in that, The number of suction cups is set to multiple; the adsorption assembly also includes a connecting frame, which is provided with multiple extension ends corresponding to the number of suction cups; The connecting frame is fixedly installed at the second end of the drive arm, and the suction cup is slidably installed on the extension end via the guide rod. The guide rod and the extension end are connected by the second elastic element.

36. The wafer pair debonding apparatus as described in claim 34, characterized in that, The number of suction cups is set to multiple; the adsorption assembly also includes a connecting frame, which is provided with multiple extension ends corresponding to the number of suction cups; The suction cup is installed on the extension end, and the drive arm is connected to the connecting frame through the drive section of the telescopic driver installed at the second end.

37. The wafer pair debonding apparatus as described in claim 33 or 34, characterized in that, The adsorption assembly also includes an air pump, the working end of which is connected to the suction cup. The air pump controls the suction cup to adsorb and release the wafer from the upper layer by drawing in and releasing air.

38. The wafer pairing and debonding apparatus as described in claim 1, characterized in that, The wafer pair debonding device also includes a control screen installed on the worktable, which controls the wafer pair debonding process through a built-in control system.

39. The wafer pair debonding apparatus as described in claim 1, characterized in that, A protective cover made of transparent material is rotatably mounted on one side of the worktable to protect the wafer pair debonding process.

40. The wafer pair debonding apparatus as described in claim 1, characterized in that, The wafer debonding device also includes an alarm light and an emergency stop button installed on the workbench; The alarm light is used to alert the system to faults occurring during the wafer pair debonding process; the emergency stop button is used to control the shutdown of the wafer pair debonding device.

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