A precursor carrier and apparatus for batch production of single crystal boron nitride wafers

Abstract

The present application relates to a kind of batch preparation single crystal boron nitride wafer precursor carrier and device, precursor carrier includes the precursor carrier body with columnar structure, several along its axial extension channel is provided on the precursor carrier body, the channel is used to place precursor containment tube;The precursor containment tube includes the outer sleeve tube of one end opening and the inner sleeve tube of one end opening in the outer sleeve tube, the opening end of the inner sleeve tube is close to the closed end of the outer sleeve tube.The device also includes long substrate carrier, including growth substrate tray, several groups of wafer bearing assemblies are provided on the growth substrate tray, several layers of wafer card slot are provided on the wafer bearing assembly.The device of the present application significantly improves the preparation efficiency of single crystal boron nitride wafer, size specification consistency and crystallization quality, is suitable for industrial large-scale production, promotes single crystal boron nitride wafer this material from laboratory to industrial application.

Description

Technical Field

[0001] This invention relates to a precursor carrier and apparatus for mass production of single-crystal boron nitride wafers, belonging to the technical field of wafer fabrication apparatus. Background Technology

[0002] Single-crystal boron nitride (sc-hBN), as an emerging wide-bandgap semiconductor material, exhibits great application potential in next-generation high-frequency high-power electronic devices, deep-ultraviolet optoelectronic devices, quantum emitter platforms, two-dimensional material heterogeneous integrated substrates, and neutron detection due to its excellent physicochemical properties (such as high thermal conductivity, high breakdown field strength, good chemical inertness, wide bandgap, atomically flat surface, no dangling bonds, and weak interlayer van der Waals forces). The large-scale fabrication of high-quality, large-size sc-hBN wafers is a key prerequisite for its industrial application.

[0003] Existing mainstream sc-hBN preparation technologies (such as metal flux method, chemical vapor transport method, high temperature and high pressure method, molecular beam epitaxy, etc.) face a series of significant challenges when facing wafer-level, mass production: (1) The preparation efficiency is low and the cost is high. Therefore, most methods can only obtain a single or a small number of small-sized crystals in a single growth, which is difficult to meet the needs of large-scale production.

[0004] (2) Small wafer size and poor consistency: Existing technologies make it difficult to stably and efficiently prepare sc-hBN wafers with diameters greater than 2 inches and good crystal quality and thickness uniformity. Performance parameters (such as crystal quality, thickness, surface morphology and roughness) vary greatly between different batches and even between wafers in the same batch.

[0005] (3) Challenges in precursor utilization and temperature field control: In batch growth environments, how to achieve uniform supply, effective activation and precise proportioning of precursors (boron source, nitrogen source) over a large area, and maintain a highly uniform and stable flow field and mass transfer distribution on the growth substrate surface, is the core bottleneck restricting the improvement of crystal quality and size. Existing carrier designs often cannot avoid the negative impacts of temperature gradient and precursor concentration gradient.

[0006] (4) Substrate orientation, stress distribution and surface morphology control are difficult: In batch growth, ensuring the high consistency of the lattice orientation of multiple substrates and effectively managing thermal stress during the growth process to prevent wafer warping and cracking is another key challenge to obtaining high-quality wafers.

[0007] (5) Insufficient process control precision and repeatability: The growth of single-crystal hBN wafers is extremely sensitive to temperature, pressure, gas flow rate / partial pressure and their dynamic changes. Existing equipment lacks a high-precision, multi-parameter coordinated closed-loop feedback control system, resulting in a narrow process window, poor controllability of the growth process and poor batch-to-batch repeatability, making it difficult to achieve stable large-scale production.

[0008] Therefore, there is an urgent need to develop a batch fabrication device specifically designed for the mass production, high efficiency, and high quality fabrication of large-size single-crystal boron nitride wafers. This device needs to fundamentally solve key problems such as uniform precursor supply and precise temperature control, thermal / fluid field uniformity control of the growth substrate, and multi-parameter coordinated regulation of the entire growth process, in order to overcome the limitations of existing technologies and promote the industrial application of materials like single-crystal hBN wafers. Summary of the Invention

[0009] To address the aforementioned technical problems, this invention provides a precursor carrier and apparatus for mass production of single-crystal boron nitride wafers. This apparatus significantly improves the preparation efficiency, dimensional consistency, and crystal quality of single-crystal boron nitride wafers, making it suitable for large-scale industrial production and promoting the industrial application of single-crystal boron nitride wafers.

[0010] To achieve the above objectives, the present invention adopts the following technical solution: A precursor carrier for mass production of single-crystal boron nitride wafers includes: A precursor carrier body with a columnar structure, wherein a plurality of channels extending along its axial direction are provided on the precursor carrier body, the channels being used to place a precursor receiving tube. The precursor receiving tube includes an outer sleeve with one end open and an inner sleeve with one end open, which is placed inside the outer sleeve. The open end of the inner sleeve is close to the closed end of the outer sleeve.

[0011] In the aforementioned precursor carrier for mass production of single-crystal boron nitride wafers, preferably, the aperture of the channel is 10-15 mm.

[0012] A second aspect of the present invention provides an apparatus for mass production of single-crystal boron nitride wafers, comprising the precursor carrier described above, and further comprising: A growth substrate carrier includes a growth substrate tray, on which a plurality of wafer carrier components are disposed, and on which a plurality of wafer slots are disposed.

[0013] Preferably, in the apparatus for mass production of single-crystal boron nitride wafers, each layer of slots on each group of wafer carrier components is staggered with each layer of slots on other groups of wafer carrier components.

[0014] The apparatus for mass production of single-crystal boron nitride wafers, preferably, includes a wafer support assembly comprising at least three quartz pillars, with the slots evenly spaced along the axial direction of the quartz pillars.

[0015] Preferably, the apparatus for mass production of single-crystal boron nitride wafers further includes a precursor heating temperature zone module, wherein the precursor carrier is located within the precursor heating temperature zone module, and the precursor heating temperature zone module includes two independently controlled thermal field control modules.

[0016] Preferably, in the apparatus for batch preparation of single-crystal boron nitride wafers, the temperature adjustment range of the thermal field control module is from room temperature to 800℃, the heating rate is 10~20℃ / min, and the temperature control accuracy is ±1.5℃.

[0017] The apparatus for mass production of single-crystal boron nitride wafers preferably further includes a boron nitride wafer growth temperature zone module, wherein the growth substrate carrier is located within the boron nitride wafer growth temperature zone module, and the boron nitride wafer growth temperature zone module includes three independently controlled thermal field control modules.

[0018] In the aforementioned apparatus for mass production of single-crystal boron nitride wafers, preferably, the maximum heating temperature of the thermal field control module is 1100℃, and the heating rate is 10~20℃ / min.

[0019] Preferably, the apparatus for mass production of single-crystal boron nitride wafers further includes an automated control system. The furnace body moves with a motor via the automated control system, with a movement range of 0-500mm. The furnace body has an openable structure to achieve rapid cooling.

[0020] The present invention has the following advantages due to the adoption of the above technical solutions: 1. This invention uses a double-layered test tube inserted into a porous precursor carrier. The precursor, ammonia borane powder, is placed in the inner sleeve. During the heating and activation process, the double-layered sleeve structure effectively controls the expansion of the powder and filters out particulate impurities generated during decomposition. The porous sleeve structure allows the activated precursor to be uniformly diffused into the growth zone, providing a uniform flow field.

[0021] 2. The quartz pillars designed in this invention can embed thin wafers into slots, and the staggered design of different groups of slots can achieve uniform airflow coverage and ensure the uniformity of growth of multiple wafers.

[0022] 3. The device of the present invention can achieve uniform supply and precise temperature control of boron nitride growth precursor, high-precision positioning and thermal / force field uniformity control of growth substrate, and intelligent collaborative regulation of multiple parameters throughout the growth process through an automated control system. It significantly improves the preparation efficiency, size consistency and crystal quality of single-crystal boron nitride wafers, and is suitable for large-scale industrial production, promoting the application of single-crystal boron nitride wafers from the laboratory to industrial applications. Attached Figure Description

[0023] Figure 1 A schematic diagram of the overall apparatus for mass production of single-crystal boron nitride wafers; Figure 2 A three-dimensional schematic diagram of the precursor vehicle; Figure 3 This is a cross-sectional view of the precursor vehicle; Figure 4 This is a schematic diagram of a double-sleeve system in a precursor vehicle. Figure 5 A three-dimensional schematic diagram of the growth substrate carrier; Figure 6 The diagrams show a comparison of the flow field uniformity before and after using the vehicle. Figure A shows the flow field distribution without using the vehicle, and Figure B shows the flow field distribution after using the vehicle. Figure 7 The uniformity test results of the growth of four-inch boron nitride wafers are shown. Figure A shows the growth results of the process of the present invention, and Figure B shows the growth results of the conventional process. Figure 8 Figure A shows the distribution of typical Raman peaks in the boron nitride thin films prepared in the 10 batches of samples, and Figure B shows the roughness statistics of boron nitride wafers in the 10 batches of samples. Figure 9 The images show mass spectra of boron nitride wafer growth. Figure A shows the mass spectrum of the precursor grown effectively without using a double-layer sleeve, and Figure B shows the mass spectrum of the precursor grown with a double-layer sleeve. Figure 10 Figure A shows the white light interference pattern of boron nitride wafer growth without using a precursor carrier, and Figure B shows the white light interference pattern of boron nitride growth after using a precursor carrier. The attached figures are labeled as follows: 1-Precursor carrier body; 2-Channel; 3-Precursor receiving tube; 4-Inner sleeve; 5-Outer sleeve; 6-Growth substrate tray; 7-Quartz pillar; 8-Card slot. Detailed Implementation

[0024] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention are described clearly and completely below. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0025] Unless otherwise defined, the technical or scientific terms used in this invention shall have the ordinary meaning understood by one of ordinary skill in the art to which this invention pertains. The terms "first," "second," "third," "fourth," and similar terms used in this invention do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Terms such as "comprising" or "including" mean that the element or object preceding the word encompasses the elements or objects listed following the word and their equivalents, without excluding other elements or objects. Terms such as "connected" or "linked" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect.

[0026] For ease of description, spatial relative terms may be used in the text to describe the relationship of one element or feature relative to another element or feature as shown in the figure. These relative terms include, for example, "inside," "outside," "middle," "outer," "below," "above," etc. Such spatial relative terms are intended to include different orientations of the device in use or operation, other than those depicted in the figure.

[0027] Existing mainstream sc-hBN preparation technologies (such as metal flux method, chemical vapor transport method, high temperature and high pressure method, molecular beam epitaxy, etc.) face a series of significant challenges when facing wafer-level, mass production: (1) Low preparation efficiency and high cost. Therefore, most methods can only obtain a single or a small number of small-sized crystals in a single growth, which is difficult to meet the needs of large-scale production. (2) Small wafer size and poor consistency: Existing technologies are difficult to stably and efficiently prepare sc-hBN wafers with a diameter greater than 2 inches (compatible with the growth of 1-4 inch boron nitride wafers) and good crystal quality and thickness uniformity. The performance parameters (such as crystal quality, thickness, surface morphology and roughness) of different batches or even the same batch of wafers fluctuate greatly. (3) Problems in precursor utilization and temperature field control: In a batch growth environment, how to achieve uniform supply, effective activation and precise ratio of precursors (boron source, nitrogen source) over a large area, and maintain a highly uniform and stable flow field and mass transfer distribution on the growth substrate surface, is the core bottleneck restricting the improvement of crystal quality and size. Existing carrier designs often cannot avoid the negative effects of temperature gradient and precursor concentration gradient. (4) Difficulty in controlling substrate orientation, stress distribution, and surface morphology: Ensuring high consistency of lattice orientation on the surfaces of multiple substrates and effectively managing thermal stress during growth to prevent wafer warping and cracking are another key challenge in obtaining high-quality wafers during batch growth. (5) Insufficient process control precision and repeatability: The growth of single-crystal hBN wafers is extremely sensitive to temperature, pressure, gas flow / partial pressure, and their dynamic changes. Existing equipment lacks a high-precision, multi-parameter collaborative closed-loop feedback control system, resulting in a narrow process window, poor controllability of the growth process, and poor batch repeatability, making it difficult to achieve stable large-scale production. Therefore, it is urgent to develop a batch preparation device specifically designed for the mass production, high-efficiency, and high-quality preparation of large-size single-crystal boron nitride wafers. This device needs to fundamentally solve key problems such as uniform supply and precise temperature control of precursors, uniform control of thermal / fluid field of the growth substrate, and multi-parameter collaborative regulation of the entire growth process, in order to overcome the limitations of existing technologies and promote the industrial application of materials such as single-crystal hBN wafers from the laboratory.

[0028] To address the aforementioned technical issues, this invention provides a precursor carrier and apparatus for the mass production of single-crystal boron nitride wafers. This apparatus significantly improves the preparation efficiency, dimensional consistency, and crystal quality of single-crystal boron nitride wafers, making it suitable for large-scale industrial production and promoting the industrial application of single-crystal boron nitride wafers.

[0029] like Figure 1 As shown, the apparatus for batch preparation of single-crystal boron nitride wafers involved in this invention includes: a precursor heating temperature zone module, a boron nitride wafer growth temperature zone module, a precursor carrier, a growth substrate carrier, and an automated control system.

[0030] Specifically, the precursor heating zone module adopts a zoned induction heating system, which includes two independently controlled thermal field control modules. The temperature adjustment range is from room temperature (20℃) to 800℃, and the heating rate can reach 15℃ / min. The temperature control is a gradient distribution: activation zone (130~150℃) → volatilization zone (50~100℃), with a temperature control accuracy of ±1.5℃.

[0031] Furthermore, the boron nitride wafer growth temperature zone module includes three independently controlled thermal field control modules, with a temperature reaching 1100℃ and a heating rate of up to 15℃ / min. The furnace body can be moved by a motor via an automated control system, with a movement range of 0~500mm. The furnace body is also designed with an openable lid structure to achieve rapid cooling.

[0032] like Figure 2 , Figure 3 , Figure 4 As shown, the precursor carrier of this invention includes a precursor carrier body 1 with a columnar structure. The precursor carrier body 1 has several channels 2 (with a diameter of 10-15 mm) extending axially along its axis. The channels 2 are used to place a precursor receiving tube 3. The precursor receiving tube 3 includes an outer sleeve 5 open at one end and an inner sleeve 4 open at one end, placed inside the outer sleeve 5. The open end of the inner sleeve 4 is close to the closed end of the outer sleeve 5. The precursor ammonia borane powder is placed in the inner sleeve 4. The double-layer sleeve design during the heating activation process can effectively control the expansion of the powder and filter out particulate impurities generated during decomposition. The porous sleeve design allows the activated precursor to be uniformly diffused into the growth zone, providing a uniform flow field.

[0033] Specifically, in the double-sleeved precursor carrier of the present invention, the openings of the inner sleeve 4 and the outer sleeve 5 are designed to face opposite directions. The opening of the inner sleeve 4 faces downwards ( Figure 4 For illustrative purposes only. In actual production, the precursor container tube 3 is placed vertically, with the inner sleeve 4 opening downwards and the outer sleeve 5 opening upwards. This creates a localized high-pressure environment inside the tube during the reaction. Utilizing the pressure sensitivity of the ammonia borane decomposition reaction, the decomposition rate is actively suppressed from a chemical kinetic perspective, thus preventing violent expansion and splashing of the powder from the source. The outer sleeve 5, with its upward opening, serves as the sole outlet for the pure precursor, ensuring that the airflow direction is consistent with the thermal convection direction, efficiently transporting the precursor to the growth region.

[0034] The design of this double-layer casing integrates the functions of precursor activation, expansion suppression, impurity filtration, and uniform transport through a synergistic mechanism of "inner layer pressure control to suppress decomposition and outer layer flow guidance to optimize transport". This achieves unprecedented precision control over the decomposition process of ammonia borane and lays the core equipment foundation for high-quality, mass production of single-crystal boron nitride.

[0035] The core of the impurity filtration mechanism lies in utilizing the differences in volatility of the components of the ammonia borane decomposition products for online thermal fractionation and separation. The double-walled structure, combined with its precise temperature control system, constitutes an in-situ fractionation and purification device. Specifically, at the activation temperature set in the inner wall 4, the target precursor product, borazine (B3N3H6), efficiently vaporizes due to its low boiling point, allowing it to pass through the porous structure; while the high-boiling-point polymerized ammonia borane impurities generated by the side reaction are largely blocked and retained in the reaction zone of the inner wall 4 in liquid or solid form due to their low volatility. Mass spectrometry analysis was used to analyze the composition of the precursor before and after using the carrier. Figure 9 As shown in Figure A, without using the carrier of this invention (comparative example), it can be observed that in the mass spectrum, in addition to the characteristic peaks of the target precursor borazine (B3N3H6, mass-to-charge ratio m / z=81), a series of significant impurity peaks also exist. Among them, the characteristic peaks with mass-to-charge ratios m / z=56 and m / z=67 are particularly prominent, and comparison confirms that they are polymerized aminoboranes (such as [BH2NH2)). n The decomposition fragments (etc.) indicate that a large number of high-molecular-weight, low-volatility by-reaction products were not effectively filtered and directly entered the growth environment. Simultaneously, the surface morphology of the corresponding grown boron nitride, characterized by white light interferometry, is shown... Figure 10 As shown in Figure A, the boron nitride surface grown without a carrier is rough with a large amount of particulate contaminants, and the roughness is as high as 65.77 nm.

[0036] After using the double-sleeved precursor carrier of the present invention: Figure 9 Figure B shows a fundamental change in the mass spectrum. The impurity peaks at m / z=56 and m / z=67 show significantly reduced signal intensities, or even disappear completely. Simultaneously, the characteristic peak of the target product, borazine (m / z=81), becomes the dominant peak, and the signal-to-noise ratio is significantly improved. This indicates that the vast majority of polymerization impurities have been efficiently retained. The corresponding morphology characterization... Figure 10 Figure B shows that the grown boron nitride surface is smooth after using the precursor carrier, with a roughness of only 0.416 nm. Therefore, the precursor carrier for boron nitride growth designed in this invention can effectively screen out the contamination problem of impurity growth sources on the boron nitride surface, realizing the mass production of ultra-smooth single-crystal boron nitride.

[0037] Subsequently, the gaseous borazine is stably transported within the slits of the inner and outer sleeves, eventually being guided from the outlet to the growth temperature zone. This process fundamentally prevents high-molecular-weight impurities from entering the crystal growth region, achieving online in-situ purification of the precursor and providing a crucial guarantee for obtaining high-purity single-crystal boron nitride.

[0038] Another core design feature of this invention is the use of a porous sleeve structure for the precursor carrier. This porous sleeve surrounds the precursor source delivery path and has uniformly distributed channels 2 inside. When the precursor carrier gas carrying the source material flows through this sleeve, the concentrated injection gas flow is forcibly dispersed and released diffusely through this porous structure. This design transforms a traditional point-jet source into a planar diffusion source with a large surface area and uniform distribution, thereby forming a uniform and stable precursor concentration field within the reaction chamber.

[0039] like Figure 5 As shown, the growth substrate carrier of the present invention includes a growth substrate tray 6, on which a plurality of wafer carrier assemblies are disposed, and a plurality of wafer slots 8 are disposed on the wafer carrier assemblies. Preferably, each layer of slots 8 on each group of wafer carrier assemblies is staggered from each layer of slots 8 on other groups of wafer carrier assemblies. Specifically, the wafer carrier assembly includes at least three quartz pillars 7, and the slots 8 are uniformly spaced along the axial direction of the quartz pillars 7.

[0040] like Figure 5 As shown, in a preferred embodiment of the present invention, the growth substrate carrier can hold 10 copper-nickel wafers at a time for boron nitride growth. The quartz pillars 7 can embed the thin wafers into the slots 8, and the designed staggered slot structure can achieve uniform airflow coverage, ensuring the uniformity of multi-wafer growth. Figure 6 Figure A shows the flow field distribution at the carrier location during the growth process, simulated using software. As can be seen from Figure A, the flow field distribution without a precursor carrier is uneven, which can easily lead to the precursor not reaching the growth substrate surface uniformly during growth. Using both a precursor carrier and a growth substrate carrier achieves a uniform flow field, ensuring uniform growth between wafers, as shown in Figure B.

[0041] To further optimize the flow field distribution within the reaction chamber, this invention also designs a growth substrate carrier with a staggered structure to support the wafer substrate. This staggered structure can guide the airflow, which has been initially homogenized by the porous sleeve, to flow smoothly and laminarly across each wafer surface, avoiding the generation of eddies and local turbulence, and ensuring that the mass transport rate of the precursor gas is consistent across each wafer surface.

[0042] Computational fluid dynamics simulations have verified that the uniformity of the flow field distribution within the reaction chamber is significantly improved after adopting the carrier structure of this invention (see simulation results). Figure 6 The uniform flow field distribution enables the precursor to be delivered to all substrate surfaces simultaneously and in equal quantities, thus allowing for the synchronous and uniform epitaxial growth of more than ten four-inch boron nitride wafers at once.

[0043] Experimental results show that boron nitride wafers grown using the apparatus of this invention can achieve uniform, full-coverage growth on their surface. For example... Figure 7 As shown in Figure A, no signs of oxidation appeared on the wafer surface after heating and baking, thanks to the excellent anti-oxidation and anti-corrosion protection of the complete and dense boron nitride film. Conversely, as shown in the comparative example... Figure 7 As shown in Figure B, the wafers grown without using the carrier of the present invention have incomplete film coverage due to uneven flow field, and the uncovered areas show obvious oxidation and discoloration after baking.

[0044] from Figure 10 As shown in Figure A, the boron nitride grown without a substrate has a rough surface with many particulate contaminants, and the roughness is as high as 65.77 nm. However, after using a precursor substrate, the grown boron nitride has a smooth surface with a roughness of only 0.416 nm. Figure 10 As shown in Figure B, the precursor carrier for boron nitride growth designed in this invention can effectively eliminate the contamination problem of impurity growth sources on the boron nitride surface, enabling the mass production of ultra-flat single-crystal boron nitride.

[0045] In summary, the present invention achieves the diffusion conversion of the precursor from a point source to a surface source and the construction of a uniform and stable flow field within the reaction chamber through the synergistic design of a porous sleeve-type precursor carrier and a stacked fault-type growth substrate carrier. This is the key reason why the device of the present invention can achieve the uniform growth of boron nitride wafers in large batches and of high quality.

[0046] like Figure 1 As shown, the automated control system of the device of this invention mainly consists of a growth process setting interface, an instrument parameter monitoring interface, a growth parameter monitoring interface, and a furnace movement control interface. The growth process setting interface allows direct setting of parameters such as temperature, atmosphere, and flow rate for boron nitride wafer growth on the panel, and these parameters can be modified in real time during the growth process. The instrument parameter monitoring interface records whether the instrument's operating indicators are normal at each moment and the operating parameters of each module. The growth parameter monitoring interface records the conditions for each growth cycle, including changes in the precursor heating module, wafer growth module, flow rate, and pressure, ensuring batch stability during boron nitride growth. The furnace movement control interface allows real-time control of the furnace's heating position, and can control the motor and adjust the heating position during the growth process to achieve temperature gradient control and rapid heating and cooling.

[0047] The collaborative workflow between the modules is as follows: Precursor transport stage: Ammonia borane is pyrolyzed in the precursor heating zone module to generate active precursor groups, which are then uniformly output through the precursor carrier. Boron nitride wafer growth stage: The growth substrate carrier is maintained at 1000℃±10℃ and the furnace movement is controlled. The ammonia borane precursor is deposited in the boron nitride wafer growth zone module, pyrolyzed, and then transported to the wafer surface for growth, which takes 30~60 minutes. After growth, heating is automatically shut off, and the furnace is then moved and cooled to room temperature. Abnormal handling mechanism: When the pressure fluctuates by 10 Torr, an emergency stop is initiated, suspending heating and gas filling.

[0048] Figure 7 The results of growth using the apparatus of this invention and a conventional CVD tube furnace are presented. Conventional CVD tube furnaces cannot achieve wafer coverage of boron nitride; after baking on a hot plate, the uncovered areas are oxidized. Wafers grown using the batch preparation apparatus of this invention can achieve uniform, full-coverage growth. The uniformity and roughness of boron nitride wafers grown in 10 batches were statistically analyzed using Raman spectroscopy and atomic force microscopy, such as... Figure 8 As shown. Figure 8 Figure A shows the characteristic spectral peak E of 10 batches of boron nitride wafers prepared by the apparatus of this invention. 2g Located at 1367cm -1 The surface area is uniformly distributed within a range of hundreds of micrometers. Atomic force microscopy was used to analyze the roughness of 10 batches of boron nitride wafers, and all of them were below 0.5 nm, exhibiting ultra-smooth characteristics.

[0049] The precursor carrier of this invention employs a porous sleeve design, enabling uniform supply and precise temperature control of the precursor. The growth substrate carrier's slots utilize a staggered structure design to ensure consistent wafer growth and uniform thermal distribution. The automated control system integrates closed-loop feedback modules for multiple parameters such as temperature, pressure, and gas flow rate, achieving dynamic regulation and batch stability of the growth process. By optimizing the carrier's mechanical structure and material configuration, combined with the automated control system, this device significantly improves the fabrication efficiency, dimensional consistency, and crystal quality of single-crystal boron nitride wafers, making it suitable for large-scale industrial production.

[0050] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. An apparatus for mass production of single-crystal boron nitride wafers, characterized in that, include: A precursor carrier body (1) with a columnar structure is provided on the precursor carrier body (1) with a plurality of channels (2) extending along its axial direction, the channels (2) being used to place the precursor receiving tube (3). The precursor receiving tube (3) includes an outer tube (5) with one end open and an inner tube (4) with one end open, placed inside the outer tube (5), with the open end of the inner tube (4) close to the closed end of the outer tube (5). The growth substrate carrier includes a growth substrate tray (6), on which a plurality of wafer carrier components are disposed, and on which a plurality of wafer slots (8) are disposed. Each layer of slots (8) on each set of wafer carrier components is staggered from each layer of slots (8) on other sets of wafer carrier components; In actual production, the precursor housing tube 3 is placed vertically, with the inner sleeve 4 opening downwards and the outer sleeve 5 opening upwards. The synergistic design of the porous sleeve-type precursor carrier and the stacked fault growth substrate carrier enables the diffusion conversion of the precursor from point source to surface source and the construction of a uniform and stable flow field in the reaction chamber. This is the key reason why the device can achieve mass production and high-quality uniform growth of boron nitride wafers.

2. The apparatus for mass production of single-crystal boron nitride wafers according to claim 1, characterized in that, The diameter of the channel (2) is 10~15mm.

3. The apparatus for mass production of single-crystal boron nitride wafers according to claim 1, characterized in that, The wafer carrier assembly includes at least three quartz pillars (7), and the slots (8) are evenly spaced along the axial direction of the quartz pillars (7).

4. The apparatus for mass production of single-crystal boron nitride wafers according to claim 3, characterized in that, It also includes a precursor heating temperature zone module, in which the precursor carrier is located, and the precursor heating temperature zone module includes two independently controlled thermal field control modules.

5. The apparatus for mass production of single-crystal boron nitride wafers according to claim 4, characterized in that, The temperature adjustment range of the thermal field control module is from room temperature to 800℃, the heating rate is 10~20℃ / min, and the temperature control accuracy is ±1.5℃.

6. The apparatus for mass production of single-crystal boron nitride wafers according to claim 4, characterized in that, It also includes a boron nitride wafer growth temperature zone module, wherein the growth substrate carrier is located within the boron nitride wafer growth temperature zone module, and the boron nitride wafer growth temperature zone module includes three independently controlled thermal field control modules.

7. The apparatus for mass production of single-crystal boron nitride wafers according to claim 6, characterized in that, The maximum heating temperature of the thermal field control module is 1100℃, and the heating rate is 10~20℃ / min.

8. The apparatus for mass production of single-crystal boron nitride wafers according to claim 6, characterized in that, It also includes an automated control system, through which the furnace body moves with the motor, with a movement range of 0~500mm. The furnace body has an openable structure to achieve rapid cooling.

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