A simulation method and simulation model for polycrystalline silicon resistors

Abstract

This application provides a simulation method and simulation model for polysilicon resistors, relating to the field of semiconductor technology. Addressing the issue that polysilicon resistors cannot be identified during simulation due to breakdown conditions, leading to mismatches between the polysilicon resistor and external circuits, this application improves the simulation model for polysilicon resistors. Specifically, this application configures the polysilicon resistor simulation model as a multi-segment model based on its breakdown voltage, and configures the segmented model when a voltage higher than the breakdown voltage is applied to the polysilicon resistor as a high-resistance state. This allows the simulation model to identify the breakdown state of the polysilicon resistor through the high-resistance current formed under voltage, ensuring that the simulated polysilicon resistor will not break down in practical applications, thus avoiding repetitive work for operators.

Description

Technical Field

[0001] This application relates to semiconductor technology, specifically to a simulation method and simulation model for polycrystalline silicon resistors. Background Technology

[0002] Polysilicon resistors are resistive structures formed during integrated circuit manufacturing by depositing a thin film of polysilicon on an insulating layer (such as oxide) and then doping it. Polysilicon resistors generally exhibit voltage-nonlinear resistance characteristics, meaning their resistance value often varies with voltage (typically simulated using a quadratic function). Due to their resistive properties and simple fabrication process, they are often used as important structures in semiconductor devices (such as current-limiting elements and load elements).

[0003] The voltage nonlinearity of polysilicon resistors often necessitates complex simulations during semiconductor device design. Therefore, improving the simulation accuracy of polysilicon resistors to more accurately reflect their actual behavior is a pressing technical challenge for those skilled in the art. Summary of the Invention

[0004] In view of this, the embodiments of this application provide a simulation method and simulation model for polycrystalline silicon resistors. In addition to simulating its working region, a segmented high-resistivity model is configured based on its breakdown voltage so that the simulation model can more comprehensively reflect the characteristics of polycrystalline silicon resistors.

[0005] In a first aspect, this application provides a simulation method for a polycrystalline silicon resistor. The simulation method includes: determining multiple sets of test data for a target polycrystalline silicon resistor, wherein the test data includes voltage-current data or voltage-resistance data of the target polycrystalline silicon resistor; determining the breakdown voltage and effective operating data of the target polycrystalline silicon resistor from the multiple sets of test data, wherein the target polycrystalline silicon resistor is broken down when its voltage is greater than the breakdown voltage; determining a first simulation model of the target polycrystalline silicon resistor based on the effective operating data and a second simulation model of the target polycrystalline silicon resistor based on the breakdown voltage, wherein the first simulation model is consistent with the resistance-voltage relationship in the effective operating data, and the second simulation model is configured as a high-resistivity model; determining a target simulation model of the target polycrystalline silicon resistor based on the first simulation model and the second simulation model, wherein when the voltage of the target polycrystalline silicon resistor is less than the breakdown voltage, the target simulation model is configured as the first simulation model, and when the voltage of the target polycrystalline silicon resistor is greater than the breakdown voltage, the target simulation model is configured as the second simulation model, and the high-resistivity model is used to generate a high-resistivity current to reflect the breakdown of the target polycrystalline silicon resistor.

[0006] Secondly, this application provides a simulation model for a polycrystalline silicon resistor. When the voltage of the simulation model is less than the breakdown voltage of the corresponding polycrystalline silicon resistor, the simulation model switches to a first simulation model, wherein the resistance-voltage relationship in the effective operating data of the polycrystalline silicon resistor corresponding to the first simulation model is consistent with that in the simulation model. When the voltage of the simulation model is greater than the breakdown voltage, the simulation model switches to a second simulation model, which is configured as a high-resistivity model. The high-resistivity model is used to generate a high-resistivity current to reflect the breakdown of the target polycrystalline silicon resistor.

[0007] Therefore, to address the issue of polysilicon resistors failing to identify breakdown conditions during simulation, leading to mismatches between polysilicon resistors and external circuits, this application improves the simulation model for polysilicon resistors. Specifically, this application configures the simulation model of polysilicon resistors as a multi-segment model based on their breakdown voltage, and configures the segmented model when a voltage higher than the breakdown voltage is applied to the polysilicon resistor as a high-resistance state. This allows the simulation model to identify the breakdown state of the polysilicon resistor through the high-resistance current formed under voltage, ensuring that the simulated polysilicon resistor will not break down in actual applications, thus avoiding repetitive work for operators. Attached Figure Description

[0008] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0009] Figure 1 This is an exemplary flowchart of a simulation method for polysilicon resistors provided in some embodiments of this application.

[0010] Figure 2 This is a schematic diagram of the target simulation model provided in some embodiments of this application.

[0011] Figure 3 This is an exemplary flowchart of negative feedback adjustment of the first simulation model provided in some embodiments of this application.

[0012] Figure 4 This is an exemplary flowchart of the simulation process of the target simulation model provided in some embodiments of this application in a simulation circuit.

[0013] Figure 5 This is an exemplary flowchart of a method for determining a desired simulation model provided in some embodiments of this application.

[0014] Figure 6 These are schematic diagrams of the structure of electronic devices provided in some embodiments of this application. Detailed Implementation

[0015] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0016] It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Therefore, the figures only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the shape, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0017] In this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application. Furthermore, the terms "first" and "second" are used only for descriptive and distinguishing purposes and should not be construed as indicating or implying relative importance.

[0018] Application Overview:

[0019] As mentioned above, when constructing a simulation model for a polycrystalline silicon resistor, the simulation is generally based on the voltage-resistance characteristics of the polycrystalline silicon resistor so that the simulation model can reflect the nonlinear resistance characteristics of polycrystalline silicon.

[0020] However, based on the aforementioned modeling logic, polysilicon resistors in simulations often only consider their nonlinear resistance, ensuring that the resistance-voltage relationship meets the design requirements of semiconductor devices. But in actual fabrication, the actual resistance value of a polysilicon resistor cannot infinitely satisfy the nonlinear relationship; it will break down under voltages outside the operating region. A polysilicon model that only simulates the resistance value within the operating region cannot determine the breakdown situation in actual operation. This could lead to the breakdown of the polysilicon resistor in the semiconductor device during actual testing, production, or use, resulting in device failure, requiring relevant personnel to readjust the device parameters.

[0021] To address the issue of polysilicon resistors failing to identify breakdown conditions during simulation, thus preventing compatibility with external circuits, this application improves the simulation model for polysilicon resistors. Specifically, this application configures the simulation model of polysilicon resistors as a multi-segment model based on their breakdown voltage, and configures the segmented model when a voltage higher than the breakdown voltage is applied to the polysilicon resistor as a high-resistance state. This allows the simulation model to identify the breakdown state of the polysilicon resistor through the high-resistance current formed under voltage, ensuring that the simulated polysilicon resistor will not break down in practical applications, thereby avoiding repetitive work for operators.

[0022] The simulation method and simulation model of the polycrystalline silicon resistor provided in this application will be described in detail below with reference to the accompanying drawings.

[0023] An exemplary simulation method for polycrystalline silicon resistors:

[0024] As mentioned above, in order to construct a suitable simulation model for polycrystalline silicon resistors, this application provides an exemplary flowchart of a simulation method for polycrystalline silicon resistors (…). Figure 1 ), to construct a simulation model of polycrystalline silicon resistors. Figure 1 The process P100 shown can be executed by an electronic device, which can acquire test data of the polysilicon resistor or its built-in resistance testing device, and then construct a simulation model of the polysilicon resistor through the calculation module in the electronic device.

[0025] It should be noted that, considering that in practical applications, polysilicon resistors are often fabricated in semiconductor devices based on parameters rather than being assembled into devices like traditional resistors and circuits, the simulation modeling of polysilicon resistors referred to in this application can refer to the simulation modeling of polysilicon resistors under specific fabrication parameters.

[0026] like Figure 1 As shown, P100 may include the following steps:

[0027] S110, Determine multiple sets of test data for the target polysilicon resistor.

[0028] S120. Determine the breakdown voltage and effective operating data of the target polysilicon resistor from multiple sets of test data.

[0029] S130. Determine the first simulation model of the target polysilicon resistor based on effective working data and determine the second simulation model of the target polysilicon resistor based on the breakdown voltage.

[0030] S140. Determine the target simulation model for the target polycrystalline silicon resistor based on the first simulation model and the second simulation model.

[0031] In the aforementioned S110, the target polysilicon resistor can refer to the polysilicon resistor fabricated based on fixed parameters for the simulation model construction. Here, "target polysilicon resistor" is a designation for the polysilicon resistor used in the simulation model; in actual testing, various polysilicon resistors with different fabrication parameters are often tested for use in semiconductor devices.

[0032] To simplify the testing process and reduce the complexity of device fabrication, the polysilicon resistor being tested does not need to be formed within a complete semiconductor structure. That is, the polysilicon resistor can be fabricated separately for testing. Furthermore, considering that this application requires testing the breakdown voltage of the polysilicon resistor, and that a breakdown of the polysilicon resistor may cause it to burn out, multiple resistors of the same specification can be fabricated for testing.

[0033] Test data can refer to the test results of polycrystalline silicon resistors. It is generally presented as voltage and current data for the polycrystalline silicon resistor (typically, the current value is measured under varying voltage conditions). Considering that polycrystalline silicon resistors primarily involve the relationship between voltage and resistance, their test data can be characterized as voltage-resistance data. Furthermore, test results can also be presented as other forms of resolvable data (such as current conductance, current resistance, etc.).

[0034] In practical applications, a set of test data is often determined based on the test of a single polysilicon resistor. For example, starting from 0V, the voltage amplitude can be gradually increased towards the polysilicon resistor, while simultaneously recording parameters such as current and resistance to construct the test data. The test data will then be presented as multiple sets of current-voltage / voltage-resistance data. Furthermore, the aforementioned test data can also be processed into other formats (such as graphs).

[0035] When performing the aforementioned S110, the data can be obtained using a polysilicon resistance measuring device (such as a voltage-resistance testing device based on the four-probe method). This measuring device is directly integrated into the electronic device performing P100, meaning that the test data collected by the measuring device can be directly sent to the electronic device to achieve the aforementioned S110. Alternatively, the test data collected by the measuring device can be recorded by other devices and transmitted to the electronic device after the measurement is completed.

[0036] In the aforementioned S120, the breakdown voltage can also be understood as the threshold voltage for maintaining the nonlinear resistance characteristics of the polysilicon resistor. That is, if the breakdown voltage is exceeded, the nonlinear resistance characteristics of the polysilicon resistor cannot be maintained, thus preventing the polysilicon resistor from meeting the performance requirements of semiconductor devices. Therefore, in the test data, after determining the breakdown voltage, the portion of the test data with voltage values ​​lower than the breakdown voltage can reflect the nonlinear resistance characteristics of the polysilicon resistor (i.e., the effective operating data).

[0037] Specifically, breakdown voltage generally refers to the critical voltage at which a polysilicon resistor breaks down. That is, when the voltage applied to a polysilicon resistor exceeds its breakdown voltage, the resistor will break down. Specifically, when a polysilicon resistor breaks down, it typically exhibits open-circuit characteristics due to thermal melting; that is, when the voltage in its test data exceeds the breakdown voltage, it often shows open-circuit features (such as zero current and a sudden increase in resistance). Furthermore, before thermal melting causes an open circuit, the polysilicon resistor can also undergo electrical breakdown, producing a phenomenon similar to an avalanche and exhibiting short-circuit characteristics (such as a sudden increase in current).

[0038] That is, when performing the aforementioned S120, the breakdown voltage can be identified from the test data first, and test data with voltages lower than the breakdown voltage can be regarded as valid operating data. As mentioned above, the breakdown voltage can be identified based on the characteristics of the polysilicon resistor when it breaks down (such as short-circuit characteristics and / or open-circuit characteristics), thereby defining the valid operating data.

[0039] Furthermore, considering that the aforementioned test data often presents in multiple sets, statistical methods can be used to determine multiple breakdown voltages based on the test data from different sets, and then the breakdown voltage can be determined based on the confidence level. Considering that the breakdown voltage is used to reflect the breakdown status of polysilicon resistors in simulation, the breakdown voltage can also be a lower value (such as the voltage value of 5% probability breakdown in the probability density curve) or the breakdown voltage can be further reduced (such as reducing the statistically determined breakdown voltage by 10%) to ensure the stability of device operation.

[0040] Furthermore, considering that in practical applications, the voltage applied to polysilicon in semiconductor devices with polysilicon resistors may be multidirectional, the aforementioned test data can include both positive and negative voltage test data. Here, "positive" and "negative" refer only to the voltage direction and do not imply magnitude. Additionally, while polysilicon resistors are generally symmetrical, they can exhibit slight deviations under special circumstances. Therefore, the breakdown voltage determined in S120 can be further divided into positive and negative values. That is, the breakdown voltage can include both positive and negative voltage thresholds. Correspondingly, when acquiring the test data, voltages can be applied in different directions to obtain test data in different directions (i.e., the aforementioned positive and negative voltage test data).

[0041] In the aforementioned S130, the first simulation model can be used to simulate the effective operating data of a polycrystalline silicon resistor, and the defined voltage-resistance relationship is consistent with the resistance-voltage relationship in the effective operating data. In related technologies, the first simulation model is often configured as a binary simulation model of resistance with voltage (or voltage value) as the variable. For example, it can be characterized as: R = a + bV + cV 2Where R is resistance, V is voltage, and a, b, and c are the coefficients to be measured. Furthermore, considering different simulation accuracy requirements, the aforementioned first simulation model can also be configured with more complex simulation logic, which will not be elaborated upon here.

[0042] The second simulation model can be used to simulate the breakdown of a polysilicon resistor. Unlike the complexity and delay of actual breakdown, the second simulation model only needs to provide a direct breakdown signal. To achieve this, this application creatively configures the second simulation model as a high-resistance model. A high-resistance model assigns a very large resistance to the polysilicon resistor, causing it to output a high-resistance current at a voltage greater than the breakdown voltage, thus reflecting the breakdown of the polysilicon resistor. The high-resistance current reflects the influence of the high-resistance model on the current flowing through it, so that when a high-resistance current appears, it can be inferred that the polysilicon resistor is in a high-resistance state. The high-resistance current can be defined from both absolute and relative magnitude perspectives, satisfying either one is sufficient. At the absolute magnitude level, the high-resistance current can be below a specific current value. Considering the relatively large resistance value under the aforementioned high-resistance state, the high-resistance current typically refers to a current below nA (such as pA, fA), which can be determined by current detection. At the relative magnitude level, high-resistivity current can be determined based on its sudden change or its ratio to the normal operating current. For example, high-resistivity current may be less than one-thousandth of the normal operating current. Therefore, when the current suddenly drops to one-thousandth of the operating current, or when the magnitude of the operating current is known and the dimension of the current value (e.g., μA) during testing is much smaller than the dimension of the operating current (e.g., A or mA), high-resistivity current can also be identified.

[0043] In the aforementioned S130, the second simulation model can be directly called as the simulation model based on the interface of the high-resistivity model in the corresponding simulation environment. If the simulation environment does not have a pre-set interface for calling a high-resistivity model, a very large resistance (typically 10) can be directly assigned. 5 Ω~10 7 Ω, for example, can be 10 6 (Ω) is used as the high-resistance state. For the first simulation model, during execution of S130, model calculations can be performed based on effective operating data to determine a model that reflects the voltage-resistance relationship of the effective operating region. In some embodiments, the first simulation model can be adjusted based on a feedback algorithm to determine precise parameters, as detailed in [reference needed]. Figure 5 And its related descriptions.

[0044] In the aforementioned S140, the target simulation model can refer to the simulation model generated for the target polysilicon resistor. Specifically, when the voltage of the target polysilicon resistor is less than the breakdown voltage, the target simulation model is configured as the first simulation model; when the voltage of the target polysilicon resistor is greater than the breakdown voltage, the target simulation model is configured as the second simulation model. The high-resistivity model is used to generate a high-resistivity current to reflect the breakdown of the target polysilicon resistor.

[0045] Therefore, when the target simulation model is loaded into the simulation circuit, it can be determined whether the target polysilicon resistor has been broken down by detecting the current (or changes in current) on the branch of the target simulation model.

[0046] In some embodiments, the aforementioned target simulation model can be implemented by downloading different resistance models for different scenarios, or it can be configured as a conditional resistance model. For example, the target simulation model can be configured as a SPICE resistance model based on a threshold voltage condition (also referred to as behavioral modeling), wherein the breakdown voltage is configured as a threshold voltage condition so that the SPICE resistance model is in a high-resistance state when it is greater than the breakdown voltage. Furthermore, the switching of models in the aforementioned target simulation model can also be implemented based on conventional electronic components (such as a voltage comparison selection switch constructed from multiple transistors).

[0047] For example, for a polysilicon circuit with a threshold voltage of 14V and a high-resistivity configuration of 1e6 Ω (i.e., 1 MΩ), its behavior-based SPICE model can be: r1 n2 n1 '(abs(v(n2,n1))>14)?1e6:r0×tcoef×(1.75-3 / (4+rvc×v(n2,n1)×v(n2,n1)))'. Where, r1: resistor name. n2 n1: two nodes connecting the resistors (from n2 to n1). Expression '( ... )': formula for dynamically calculating the resistance value.

[0048] This expression uses a ternary conditional operator with the structure: (condition) ? value1 : value2. The specific condition is abs(v(n2,n1))>14. That is, whether the absolute value of the node voltage difference satisfies |V(n2,n1)|>14V. If satisfied, it is configured as a high-resistance state (1e6 Ω); otherwise, it uses a quadratic nonlinear resistance model based on the temperature coefficient tcoef and the reference resistance r0: r0 × tcoef × (1.75 - 3 / (4 + rvc × v(n2,n1)^2)). Here, the temperature coefficient tcoef is dimensionless and describes the scaling factor of resistance as a function of temperature. For example, tcoef=1.02 means that the resistance increases by 2% for every 1°C increase in temperature. rvc is the voltage coefficient, in V⁻², used to quantify the nonlinear characteristics of resistance as a function of voltage. The reference resistance r0, in Ω, represents the initial resistance of the device under specific reference conditions (such as room temperature, small signal).

[0049] To further illustrate the foregoing, this application also provides a schematic diagram of the target simulation model when loading the simulation circuit. Figure 2 ).

[0050] like Figure 2 As shown, the semiconductor simulation circuit 200 may include a first node 211, a second node 212, and a target simulation model 220. The first node 211 and the second node 212 may be equivalent structures of the external circuitry of the target simulation model 220 within the semiconductor simulation circuit 200. The first node 211 and the second node 212 may reflect the two ends of the circuit connected to the target simulation model 220. That is, the first node 211 is the aforementioned n1, and the second node 212 is the aforementioned n2.

[0051] The target simulation model 220 may further include a first simulation model 221 and a second simulation model 222. The first simulation model 221 and the second simulation model 222 can be switched based on the voltage difference between the first node 211 and the second node 212. That is, if the voltage difference is less than the breakdown voltage, the first simulation model 221 is connected between the first node 211 and the second node 212. If the voltage difference is greater than the breakdown voltage, the second simulation model 222 is connected between the first node 211 and the second node 212.

[0052] It should be noted that the model used at the critical breakdown voltage can be determined based on the breakdown voltage setting and actual requirements, and this application does not impose any restrictions on this. For example, if the aforementioned breakdown voltage has a low risk of breakdown after the aforementioned design, then the first simulation model 221 can be used when the breakdown voltage is less than or equal to the breakdown voltage.

[0053] Furthermore, the switching of specific models in the aforementioned target simulation model 220 can be performed based on the simulation model's own functions (such as the behavioral modeling of the aforementioned spice model), or it can be achieved based on the components of conventional devices (such as a voltage comparison switching circuit composed of a voltage comparator and a transistor).

[0054] In summary, to address the issue of polysilicon resistors failing to identify breakdown conditions during simulation, thus preventing compatibility between the polysilicon resistor and external circuits, this application improves the simulation model for polysilicon resistors. Specifically, this application configures the simulation model of the polysilicon resistor as a multi-segment model based on its breakdown voltage, and configures the segmented model when a voltage higher than the breakdown voltage is applied to the polysilicon resistor as a high-resistance state. This allows the simulation model to identify the breakdown state of the polysilicon resistor through the high-resistance current formed under voltage, ensuring that the simulated polysilicon resistor will not break down in practical applications, thereby avoiding repetitive work for operators.

[0055] Furthermore, considering that the first simulation model of the target polycrystalline silicon resistor often involves nonlinear regression calculations, repeated adjustments are often required when constructing the first simulation model. Therefore, this application also provides a method for constructing a first simulation model based on feedback adjustment. Figure 3 ).

[0056] like Figure 3 As shown, P300 may include the following steps:

[0057] S310. Determine candidate simulation models for the target polycrystalline silicon resistor based on effective working data.

[0058] S320. Load the candidate simulation model into the simulation environment and test the candidate simulation model based on the test data in the valid working data.

[0059] S330. Adjust the candidate simulation model based on the test results feedback of the candidate simulation model in the simulation environment to determine the first simulation model.

[0060] In the aforementioned S310, the candidate simulation model can refer to a preliminary simulation model determined based on nonlinear regression using a subset of valid working data. It is generally also represented using a quadratic function (such as the aforementioned R=a+bV+cV). 2 ).

[0061] In the aforementioned S320, when the candidate simulation model is loaded into the simulation environment, a portion of the data (i.e., test data) can be selected from the valid working data for verification to check whether its performance is consistent with the actual performance of the target polysilicon resistor.

[0062] In the aforementioned S330, the model parameters can be adjusted based on the abnormal parameters using a parameter adjustment method based on quadratic nonlinear regression. Considering the adjustability of the simulation model parameters, after determining the adjusted parameters, the parameters of the candidate simulation model can be directly adjusted in the simulation environment, and the steps of S320~S330 can be repeated until the model closely matches the test data, thereby outputting the first simulation model.

[0063] In some embodiments, the aforementioned testing process S320 can be optimized using statistical algorithms, with the termination condition being whether the candidate simulation model is consistent with the target simulation model under specific probability conditions, thereby achieving the optimization iteration of the first simulation model while avoiding the impact of abnormal test data on the construction of the simulation model.

[0064] Furthermore, after each adjustment, statistical methods are used to determine the simulation performance based on the actual simulation results and test data. If the simulation performance does not improve after multiple adjustments, a suggestion to change the model or perform multiple simulations can be made.

[0065] Exemplary semiconductor device simulation process:

[0066] Based on the target simulation model determined through the aforementioned process, when invoked by the semiconductor simulation circuit, the target simulation model can be loaded into the semiconductor simulation circuit within the simulation environment. The semiconductor simulation circuit can be based on the equivalent circuit of a semiconductor device equipped with the target polysilicon resistor.

[0067] To further illustrate this process, this application also provides an exemplary flowchart of the simulation process of the target simulation model in the simulation circuit ( Figure 4 ).

[0068] like Figure 4 As shown, P400 may include the following steps:

[0069] S410: In response to the semiconductor simulation circuit calling the target polysilicon resistor, load the target simulation model of the target polysilicon resistor into the semiconductor simulation circuit and perform simulation.

[0070] S420. In response to a step change in the current of the target polysilicon resistor or the current exhibiting a high-resistivity state, it is determined that the target polysilicon resistor has been broken down.

[0071] In the aforementioned S410, the semiconductor simulation circuit can call upon a suitable polysilicon resistor based on requirements. That is, within the semiconductor simulation circuit, the resistance-voltage relationship of the polysilicon resistor to be loaded can be determined based on the setting requirements of the semiconductor device. Then, the simulation model of the polysilicon resistor satisfying this resistance-voltage relationship is called from among the already simulated polysilicon resistors. In other words, in the aforementioned S410, the target polysilicon resistor can also be further understood as the polysilicon resistor among the already modeled polysilicon resistors that satisfies the requirements of the semiconductor simulation circuit (i.e., its corresponding semiconductor device). From the result, the polysilicon circuit called upon in the aforementioned S410 necessarily undergoes the modeling process described in P100.

[0072] The aforementioned S420 can be used to detect whether the target polysilicon resistor has been broken down. That is, based on the aforementioned breakdown voltage and its corresponding high-resistivity model, breakdown detection can be performed based on the current flowing through the target polysilicon resistor during actual simulation.

[0073] Specifically, during simulation, the breakdown of the target polysilicon resistor in the simulation environment often presents the following two situations:

[0074] ① During the operation of a semiconductor device, the voltage of the target polysilicon resistor changes continuously. When it exceeds the breakdown voltage of the polysilicon resistor, the polysilicon resistor breaks down.

[0075] ② When the model of the semiconductor device is loaded, the voltage drop across the target polysilicon resistor is directly greater than the breakdown voltage, causing it to break down.

[0076] Regarding the two aforementioned scenarios, in executing S420, for scenario ①, when the polysilicon resistor breaks down, the current undergoes a sudden change (i.e., changes from normal current to high-resistivity current). Therefore, breakdown can be detected by detecting this step change in current. For scenario ②, considering that the polysilicon resistor breaks down directly, there is no sudden change in current. Breakdown identification can then be performed directly based on the current amplitude (i.e., whether it is a high-resistivity current).

[0077] Therefore, based on the aforementioned P400, this application can accurately identify the breakdown status of polysilicon resistors by detecting current indices when loading polysilicon resistors in a simulation environment, thereby accurately identifying whether polysilicon resistors are suitable for the semiconductor device.

[0078] Considering the relative ease of adjusting polysilicon resistors and the complexity of internal circuitry in semiconductor devices, prioritizing the compatibility of the polysilicon resistor model during semiconductor device adjustments, especially when loading the model, may lead to the neglect of anomalies in other internal circuit structures. Subsequent simulations of other circuit adjustments may then necessitate readjusting the polysilicon resistor. To simplify this process, this application allows for model selection based on actual needs when loading polysilicon resistors.

[0079] Specifically, the aforementioned S410 may include the following steps:

[0080] S411. In response to the fact that other circuit modules in the semiconductor simulation circuit have not completed adjustment, the first simulation model of the target polysilicon resistor is loaded into the semiconductor simulation circuit and simulated.

[0081] S412. In response to the completion of adjustments to other circuit modules in the semiconductor simulation circuit, the target simulation model of the target polysilicon resistor is loaded into the semiconductor simulation circuit and simulated.

[0082] In S410, when other circuit models are not yet adjusted, segmented polysilicon resistors can be used instead of a resistor model that reflects their normal operation, thus avoiding repeated adjustments caused by polysilicon resistors. Finally, after other circuit structures are adjusted, the determination of whether the polysilicon resistor has broken down is made.

[0083] Therefore, the aforementioned process can decouple the adjustment of other circuits from the adjustment of polysilicon resistors. Furthermore, considering that polysilicon resistors are relatively easy to adjust, the design difficulty of semiconductor devices can be further simplified.

[0084] As mentioned on page 400, when the target polysilicon resistor breaks down, it can be determined that the target polysilicon resistor is not suitable for the current semiconductor device and needs to be adjusted. Specifically, adjustments can be made at two levels: the structure of other parts of the semiconductor device or the polysilicon resistor itself. Considering that the fabrication of polysilicon resistors is relatively simple, adjustments can be made specifically to the polysilicon resistor.

[0085] To illustrate the adjustment process for polysilicon resistors, this application also provides an exemplary flowchart of a method for providing a suitable polysilicon resistor (denoted as the desired polysilicon resistor) for a semiconductor device. Figure 5 ).in, Figure 5 The method for determining the desired polysilicon resistance shown can be performed before S410 to serve as the target polysilicon resistance. Alternatively, it can be performed after S420 to provide a more suitable desired polysilicon resistance for the target polysilicon resistance that has been broken down.

[0086] like Figure 5 As shown, P500 may include the following steps:

[0087] S510. Determine the desired resistor-voltage relationship and desired voltage range for the semiconductor simulation circuit.

[0088] S520: Determine the desired polysilicon resistor for the semiconductor simulation circuit based on the desired resistor-voltage relationship and the desired voltage range.

[0089] The aforementioned P500 reflects the process of adjusting the polysilicon resistor. That is, the semiconductor simulation circuit has been fully adjusted and the current polysilicon resistor (i.e., the target polysilicon resistor) cannot be used; therefore, the polysilicon resistor needs to be readjusted.

[0090] In the aforementioned S510, the desired resistance-voltage relationship and the desired voltage range can refer to the simulation parameters of the polysilicon resistor actually required by the semiconductor device. Specifically, when executing the aforementioned S510, the desired resistance-voltage relationship (generally also presenting a range) and the desired voltage range can be fitted based on the performance requirements of the semiconductor device.

[0091] In some embodiments, when determining the aforementioned desired resistance-voltage relationship, the resistance range of the adjustable resistance model when the semiconductor device can work normally under different key operating nodes / operating states can be determined by the adjustable resistance model, and then the desired resistance-voltage relationship can be constructed by combining the voltage situation at the corresponding time, and the desired voltage range can be determined by the voltage situation.

[0092] In some embodiments, the desired resistance-voltage relationship of the required polysilicon resistor can be estimated using machine learning models or relevant simulation software based on the design of the semiconductor device. Then, a simulation model of a virtual, breakdown-free ideal polysilicon resistor is constructed based on the desired resistance-voltage relationship and loaded into the semiconductor simulation circuit. The semiconductor device is then simulated to determine its operation, and the voltage carried by the ideal polysilicon resistor during semiconductor device operation is recorded to determine the desired voltage range.

[0093] In the aforementioned S520, the desired polysilicon resistor refers to a polysilicon resistor that can satisfy the aforementioned desired resistance-voltage relationship and satisfy the desired voltage range.

[0094] In some embodiments, a polysilicon resistor can be designed based on the aforementioned desired resistance-voltage relationship and within the desired voltage range to construct the desired polysilicon resistor. After constructing the desired polysilicon resistor, the aforementioned tests need to be repeated to ensure its proper functioning.

[0095] Considering that the breakdown voltage of polycrystalline silicon resistors is often nonlinear, it may be difficult to directly determine whether a polycrystalline silicon resistor meeting the required specifications can be fabricated based solely on its performance indicators. Therefore, the process of determining the desired polycrystalline silicon resistor can be combined with known data. First, the fabrication parameters and performance parameters of several known polycrystalline silicon resistors can be determined. Then, a polycrystalline silicon resistor fabrication model can be constructed based on these parameters. Finally, the desired resistance-voltage relationship and the desired voltage range are input into the polycrystalline silicon resistor fabrication model to determine the fabrication parameters of the desired polycrystalline silicon resistor. The polycrystalline silicon resistor fabrication model can be a model or algorithm that reflects the nonlinear relationship between the fabrication parameters and performance parameters of the polycrystalline silicon resistor.

[0096] As an alternative, to further increase the reliability of the desired polycrystalline silicon resistor at the fabrication level, the aforementioned desired polycrystalline silicon resistor can be equivalently constructed using a tested polycrystalline silicon resistor to achieve the aforementioned S520. That is, the aforementioned S520 may further include the following sub-steps:

[0097] S521. Determine the candidate resistance-voltage relationship and candidate breakdown voltage of multiple candidate polycrystalline silicon resistors.

[0098] S522. In response to the fact that one or more series-parallel connections based on multiple candidate polysilicon resistors can satisfy the desired resistance-voltage relationship and the desired voltage range, the desired polysilicon resistor is determined based on the multiple candidate polysilicon resistors.

[0099] In the aforementioned S521, the candidate polysilicon resistor is similar to the previously known polysilicon resistors, both being polysilicon resistors that have already undergone testing. To further construct the desired polysilicon resistor, the aforementioned candidate polysilicon resistor can be further configured as a polysilicon resistor that can be integrated into the semiconductor device.

[0100] The aforementioned S522 can also be understood as a judgment process. That is, after determining the aforementioned desired voltage range and desired resistance-voltage relationship, it can be determined whether the tested candidate polysilicon resistors or their series-parallel combinations can meet the desired voltage range and desired resistance-voltage relationship. If so, an equivalent resistance of a desired polysilicon resistor can be constructed based on multiple candidate polysilicon resistors.

[0101] If an equivalent resistance can be constructed based on the candidate polycrystalline silicon resistor according to the aforementioned S522, it can generally be determined that the polycrystalline silicon resistor can be fabricated.

[0102] Considering that the fabrication parameters of polycrystalline silicon resistors generally have a linear impact on their performance beyond breakdown voltage—for example, parameters such as the fabrication width and thickness of polycrystalline silicon resistors affect the actual performance of the fabricated polycrystalline silicon resistor in a manner similar to series and parallel connections of resistors—then, after determining the equivalent circuit, the fabrication parameters of the desired polycrystalline silicon resistor can be determined based on the fabrication parameters of the effective polycrystalline silicon resistors used to construct the equivalent circuit among the candidate polycrystalline silicon resistors and their connection relationships within the equivalent circuit.

[0103] Exemplary electronic device:

[0104] This application also provides an electronic device, such as Figure 6 As shown. The electronic device 600 provided in this application includes a memory 610, a processor 620, and an input / output interface 630. The memory 610, processor 620, and input / output interface 630 are connected via internal connection paths. The memory 610 stores instructions, and the processor 620 executes the instructions stored in the memory 610 to control the input / output interface 630 to receive input data and information, and output operation results and other data.

[0105] It should be understood that in the embodiments of this application, the processor 620 may be a general-purpose central processing unit (CPU), microprocessor, application-specific integrated circuit (ASIC), or one or more integrated circuits to execute relevant programs in order to implement the technical solutions provided in the embodiments of this application.

[0106] The memory 610 may include read-only memory and random access memory, and provides instructions and data to the processor 620. A portion of the processor 620 may also include non-volatile random access memory. For example, the processor 620 may also store device type information.

[0107] In implementation, each step of the above method can be completed by the integrated logic circuits in the hardware of the processor 620 or by instructions in software form. The simulation method for polysilicon resistors disclosed in the embodiments of this application can be directly implemented by the hardware processor, or by a combination of hardware and software modules in the processor. The software modules can be located in random access memory, flash memory, read-only memory, programmable read-only memory, electrically erasable programmable memory, registers, or other mature storage media in the art. This storage medium is located in memory 610, and the processor 620 reads the information in memory 610 and completes the steps of the above method in combination with its hardware. To avoid repetition, it will not be described in detail here. This application also provides a computer program product, including a computer program / instructions. When the computer program / instruction processor in the computer program product provided in this application is executed, it can implement the simulation method for polysilicon resistors provided in this application or store a simulation model of polysilicon resistors.

[0108] Based on the same technical concept, this application also provides a computer program product, which includes a computer program / instruction that, when executed by a computer program / instruction processor, implements the simulation method for polysilicon resistors as described in any of the above embodiments or stores a simulation model of a polysilicon resistor.

[0109] The aforementioned computer program product can be implemented through hardware, software, or a combination thereof. In one optional embodiment, the computer program product is specifically embodied in a computer storage medium; in another optional embodiment, the computer program product is specifically embodied in a software product, such as a software development kit (SDK), etc.

[0110] The methods in this application can be implemented, in whole or in part, by software, hardware, firmware, or any combination thereof. When implemented in software, they can be implemented, in whole or in part, as a computer program product. The computer program product includes one or more computer programs or instructions. When the computer program or instructions are loaded and executed on a computer, the processes or functions described in this application are performed, in whole or in part. The computer can be a general-purpose computer, a special-purpose computer, a computer network, network equipment, user equipment, core network equipment, OAM, or other programmable device.

[0111] The computer program or instructions may be stored in a computer-readable storage medium or transferred from one computer-readable storage medium to another. For example, the computer program or instructions may be transferred from one website, computer, server, or data center to another website, computer, server, or data center via wired or wireless means. The computer-readable storage medium may be any available medium that a computer can access, or a data storage device such as a server or data center that integrates one or more available media. The available medium may be a magnetic medium, such as a floppy disk, hard disk, or magnetic tape; or an optical medium, such as a digital video optical disc; or a semiconductor medium, such as a solid-state drive. The computer-readable storage medium may be a volatile or non-volatile storage medium, or may include both volatile and non-volatile types of storage media.

[0112] Unexpected technical effects:

[0113] In summary, the simulation method and model for polycrystalline silicon resistors provided in this application have achieved the following unexpected results:

[0114] ① This application takes into account that polysilicon resistors can break down in practical applications. However, existing technologies do not recognize this problem in simulations, resulting in polysilicon resistors being prone to breakdown in real-world environments even after meeting simulation requirements. To address this inventive problem, this application configures the polysilicon resistor simulation model as a multi-segment model based on its breakdown voltage. Furthermore, it configures the segmented model when a voltage higher than the breakdown voltage is applied to the polysilicon resistor as a high-resistance state. This allows the simulation model to identify the breakdown state of the polysilicon resistor through the high-resistance current formed under voltage, ensuring that the simulated polysilicon resistor will not break down in practical applications and avoiding repetitive work for operators.

[0115] ② To identify the breakdown of a polysilicon resistor, this application creatively simulates the broken-down polysilicon resistor as a high-resistance resistor. Therefore, the circuit containing the broken-down resistor remains a closed circuit, preventing the effects of an open circuit on the internal circuitry of the semiconductor device from masking the breakdown. Consequently, the high-resistance polysilicon resistor can generate a high-resistance current, causing a sudden change in the current of its branch circuit. This facilitates the identification of the polysilicon resistor breakdown in the simulation environment.

[0116] ③ Considering that the relationship between resistance and voltage is nonlinear when a polycrystalline silicon resistor is in operation, feedback adjustments can be made based on the simulation model when constructing the first simulation model of the polycrystalline silicon resistor to quickly quantify this nonlinear relationship.

[0117] ④ When loading polysilicon resistors into the simulation circuit, in order to avoid the frequent breakdown of polysilicon resistors affecting the testing and adjustment of other devices, the first simulation model of polysilicon resistors can be loaded without considering their breakdown condition when adjusting other devices in the simulation circuit, so as to reduce the system complexity in the simulation environment.

[0118] ⑤ When polysilicon resistors cannot meet the requirements of semiconductor devices, suitable polysilicon resistors can be constructed by determining the desired performance parameters of the semiconductor devices. Furthermore, considering the nonlinearity between the breakdown voltage of polysilicon resistors and their fabrication parameters, when constructing an ideal polysilicon resistor, machine learning models built from a large amount of data can be used to predict the fabrication parameters based on the desired performance indicators. Alternatively, considering the inherent resistive characteristics of polysilicon resistors, a satisfactory polysilicon resistor can be constructed by connecting known polysilicon resistors in series and parallel.

[0119] The embodiments of the present invention disclosed above are merely illustrative of the invention. The embodiments do not exhaustively describe all details, nor do they limit the invention to the specific implementations described. Clearly, many modifications and variations can be made based on the content of this specification. This specification selects and specifically describes these embodiments to better explain the principles and practical applications of the invention, thereby enabling those skilled in the art to better understand and utilize the invention. The invention is limited only by the claims and their full scope and equivalents.

Claims

1. A simulation method for polycrystalline silicon resistors, characterized in that, The simulation method includes: Determine multiple sets of test data for the target polycrystalline silicon resistor, wherein the test data includes voltage-current data or voltage-resistance data of the target polycrystalline silicon resistor; The breakdown voltage and effective operating data of the target polysilicon resistor are determined from the multiple sets of test data, wherein the target polysilicon resistor is broken down when the voltage is greater than the breakdown voltage. A first simulation model of the target polysilicon resistor is determined based on the effective working data, and a second simulation model of the target polysilicon resistor is determined based on the breakdown voltage, wherein the first simulation model is consistent with the resistance-voltage relationship in the effective working data, and the second simulation model is configured as a high-resistivity model. The target simulation model for the target polysilicon resistor is determined based on the first simulation model and the second simulation model. When the voltage of the target polysilicon resistor is less than the breakdown voltage, the target simulation model is configured as the first simulation model. When the voltage of the target polysilicon resistor is greater than the breakdown voltage, the target simulation model is configured as the second simulation model. The high-resistivity model is used to generate a high-resistivity current to reflect the breakdown of the target polysilicon resistor.

2. The simulation method according to claim 1, characterized in that, The simulation method further includes: In response to the semiconductor simulation circuit calling the target polysilicon resistor, the target simulation model of the target polysilicon resistor is loaded into the semiconductor simulation circuit and simulated. In response to a step change in the current of the target polysilicon resistor or the occurrence of a high-resistivity current, it is determined that the target polysilicon resistor has broken down.

3. The simulation method according to claim 2, characterized in that, The step of loading the target simulation model of the target polysilicon resistor into the semiconductor simulation circuit and performing simulation includes: In response to the completion of adjustments to other circuit modules in the semiconductor simulation circuit, the target simulation model of the target polysilicon resistor is loaded into the semiconductor simulation circuit and simulated. In response to the fact that other circuit modules in the semiconductor simulation circuit have not been adjusted, the first simulation model of the target polysilicon resistor is loaded into the semiconductor simulation circuit and simulated.

4. The simulation method according to claim 2, characterized in that, After determining that the target polysilicon resistor has broken down, the simulation method further includes: Determine the desired resistance-voltage relationship and the desired voltage range of the semiconductor simulation circuit; The desired polysilicon resistance of the semiconductor simulation circuit is determined based on the desired resistance-voltage relationship and the desired voltage range.

5. The simulation method according to claim 4, characterized in that, The process of determining the desired polysilicon resistance of the semiconductor simulation circuit based on the desired resistance-voltage relationship and the desired voltage range includes: Determine the candidate resistance-voltage relationship and candidate breakdown voltage of multiple candidate polycrystalline silicon resistors; Determine whether the series-parallel connection of one or more of the candidate polysilicon resistors can satisfy the desired resistance-voltage relationship and the desired voltage range; If so, the desired polycrystalline silicon resistor is determined based on the plurality of candidate polycrystalline silicon resistors.

6. The simulation method according to claim 4, characterized in that, The process of determining the desired polysilicon resistance of the semiconductor simulation circuit based on the desired resistance-voltage relationship and the desired voltage range includes: Determine the fabrication and performance parameters of several known polycrystalline silicon resistors; A polycrystalline silicon resistor fabrication model is constructed based on the fabrication parameters and performance parameters of the aforementioned known polycrystalline silicon resistors; The desired resistance-voltage relationship and the desired voltage range are input into the polycrystalline silicon resistor fabrication model to determine the fabrication parameters of the desired polycrystalline silicon resistor.

7. The simulation method according to claim 1, characterized in that, The first simulation model for determining the target polysilicon resistor based on the effective working data includes: Based on the effective working data, a candidate simulation model for the target polycrystalline silicon resistor is determined; The candidate simulation model is loaded into the simulation environment, and the candidate simulation model is tested based on the test data in the valid working data. The candidate simulation model is adjusted based on the test results feedback in the simulation environment to determine the first simulation model.

8. The simulation method according to claim 1, characterized in that, The multiple sets of test data include positive voltage test data and negative voltage test data; the breakdown voltage includes positive voltage threshold and negative voltage threshold.

9. The simulation method according to claim 1, characterized in that, The target simulation model is configured as a SPICE resistor model based on a threshold voltage condition, wherein the breakdown voltage is configured as the threshold voltage condition so that the SPICE resistor model is in a high-resistance state when the breakdown voltage is greater than the breakdown voltage.

10. A simulation model for a polycrystalline silicon resistor, characterized in that, The simulation model is determined based on the simulation method described in any one of claims 1 to 9; When the voltage of the simulation model is less than the breakdown voltage of the corresponding polysilicon resistor, the simulation model is switched to the first simulation model, wherein the resistance-voltage relationship in the effective operating data of the polysilicon resistor corresponding to the first simulation model is consistent with that in the simulation model. When the voltage of the simulation model is greater than the breakdown voltage, the simulation model switches to the second simulation model, which is configured as a high-resistivity model. The high-resistivity model is used to generate a high-resistivity current to reflect the breakdown of the target polysilicon resistor.

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