Manufacturing method of tantalum aluminum nitride thin-film resistor

Abstract

The invention relates to the field of manufacturing of thin-film resistors, in particular to a manufacturing method of a tantalum aluminum nitride thin-film resistor, which comprises the following steps: preparing a first aluminum block and tantalum blocks, forming a plurality of first accommodating grooves in the first aluminum block, and accommodating the tantalum blocks in a damping manner by the first accommodating grooves; pressing the tantalum block into the first accommodating groove to form a sputtering target; respectively putting the sputtering targets with different tantalum block numbers and a substrate into sputtering equipment for sputtering experiment to form a first experimental resistor; determining an optimal atomic ratio according to the performance of the first experimental resistor; sputtering targets are manufactured in batches according to the optimal atomic ratio; and putting the sputtering target and the substrate which are manufactured according to the optimal atomic ratio into sputtering equipment, and carrying out a sputtering experiment to manufacture the tantalum aluminum nitride thin-film resistor. The sputtering target recovery device has the effect of conveniently recovering the residual sputtering target.

Description

Technical Field

[0001] This application relates to the field of thin-film resistor fabrication, and in particular to a method for fabricating an aluminum tantalum nitride thin-film resistor. Background Technology

[0002] With the rapid development of electronic information technology, thin-film resistors are increasingly widely used in various electronic devices, and their performance directly affects the stability and reliability of these devices. Tantalum aluminum nitride thin-film resistors, as a type of thin-film resistor with unique electrical properties, have shown great application potential in high-frequency circuits, integrated circuits, and other fields.

[0003] In the fabrication of tantalum aluminum nitride thin-film resistors, there are several traditional methods. For thin film fabrication, high-frequency sputtering in physical deposition (PVD) is commonly used. This involves filling a vacuum chamber with inert argon gas and using a high-frequency voltage electric field to generate glow discharge. The energetic argon particles bombard the sputtering target surface, causing solid atoms or molecules to escape from the target and deposit onto a substrate to form a thin film. For the fabrication of the sputtering target, current methods involve mixing and melting tantalum and aluminum powders or hot pressing to form the target.

[0004] However, during the production of thin-film resistors using this sputtering target, there will be leftover sputtering targets, which will then be recycled. However, after tantalum powder and aluminum powder are mixed, melted, or hot-pressed to form the sputtering target, the tantalum and aluminum in the sputtering target are difficult to separate and recycle. Summary of the Invention

[0005] To facilitate the recycling of remaining sputtering targets, this application provides a method for fabricating a tantalum aluminum nitride thin film resistor.

[0006] This application provides a method for fabricating an aluminum tantalum nitride thin-film resistor, which employs the following technical solution: A method for fabricating a tantalum aluminum nitride thin-film resistor includes the following steps: preparing a first aluminum block and a tantalum block, wherein a plurality of first receiving grooves are formed on the first aluminum block, the first receiving grooves being used for damping and accommodating the tantalum blocks; pressing the tantalum blocks into the first receiving grooves to form a sputtering target; placing the sputtering targets with different numbers of tantalum blocks and a substrate into a sputtering apparatus for sputtering experiments to form a first experimental resistor; determining the optimal atomic ratio based on the performance of the first experimental resistor; mass-producing sputtering targets according to the optimal atomic ratio; and placing the sputtering targets and substrates made with the optimal atomic ratio into a sputtering apparatus for sputtering experiments to fabricate the tantalum aluminum nitride thin-film resistor.

[0007] By adopting the above technical solution, firstly, an aluminum block and a tantalum block are prepared. Multiple damping grooves are opened in the first aluminum block to accommodate the tantalum blocks. The tantalum blocks are then pressed in to form a sputtering target. Experiments are conducted using sputtering targets with different numbers of tantalum blocks to determine the optimal atomic ratio, and mass production is then carried out. Finally, tantalum aluminum nitride thin-film resistors are fabricated. This manufacturing method facilitates the separation and recycling of tantalum and aluminum. Compared to existing sputtering targets formed by mixing and melting tantalum and aluminum powders or hot pressing, where tantalum and aluminum are difficult to separate and recycle after use, this method uses damping to accommodate the tantalum blocks within the damping grooves of the first aluminum block. When recycling is required, the tantalum blocks can be easily removed from the first aluminum block, achieving effective separation of tantalum and aluminum, improving material recycling rate, and reducing production costs.

[0008] Optionally, after mass production of the sputtering target and before fabrication of the tantalum aluminum nitride thin film resistor, the following steps are further included: placing the sputtering target and substrate into a sputtering device with different argon and nitrogen pressure ratios to conduct sputtering experiments and form a second experimental resistor; determining the optimal argon and nitrogen pressure ratio based on the performance of the second experimental resistor; and introducing argon and nitrogen into the sputtering device according to the optimal pressure ratio when placing the sputtering target and substrate into the sputtering device for sputtering experiments.

[0009] By adopting the above technical solution, after determining the optimal atomic ratio based on the performance of the first experimental resistor through sputtering experiments, sputtering targets are mass-produced. Subsequently, sputtering experiments are conducted with different argon and nitrogen gas pressure ratios to form a second experimental resistor. The optimal gas pressure ratio is determined based on its performance. Then, argon and nitrogen are introduced according to the optimal gas pressure ratio to produce tantalum aluminum nitride thin film resistors. This allows the determination of the optimal argon and nitrogen gas pressure ratio, thereby making the produced tantalum aluminum nitride thin film resistors perform better.

[0010] Optionally, a negative bias voltage is applied to the substrate during the sputtering experiment.

[0011] By employing the above technical solution, applying a negative bias voltage to the substrate during sputtering experiments accelerates the movement of argon ions towards the target, enhances ion bombardment energy, and increases the sputtering rate of the target, thereby improving target utilization to a certain extent. Simultaneously, it can also enhance ion bombardment of the substrate surface, improving the film's density, adhesion, and surface morphology.

[0012] Optionally, when pressing the tantalum block into the first receiving groove to form a sputtering target, a second aluminum block is pressed into the remaining part of the first receiving groove.

[0013] By adopting the above technical solution, the flatness of the sputtering target surface is improved by using a second aluminum block to fill the first receiving groove where no tantalum block was placed, thereby improving the quality of the thin film resistor.

[0014] Optionally, the first receiving groove is strip-shaped, and multiple first receiving grooves are sequentially arranged on the first aluminum block. Each first receiving groove has the same depth, and the bottom area of ​​the multiple first receiving grooves increases sequentially.

[0015] By adopting the above technical solution and setting first receiving tanks with different bottom areas, the number and distribution of tantalum blocks can be flexibly adjusted, sputtering experiments can be carried out more accurately, which helps to determine the optimal atomic ratio and improve the quality and efficiency of tantalum aluminum nitride thin film resistors.

[0016] Optionally, the first aluminum block has a plurality of second receiving slots, which are used to dampen and receive the tantalum block. The first and second receiving slots have the same depth, and the sum of the bottom areas of each second receiving slot is less than or equal to the difference in the bottom areas of two adjacent second receiving slots.

[0017] By adopting the above technical solution, the second containment tank can be adjusted to adjust the tantalum content in the sputtering target with a smaller range, thereby improving the accuracy of the optimal atomic ratio.

[0018] Optionally, the first receiving groove is circular and is arranged in a ring on the first aluminum block.

[0019] By adopting the above technical solution, during the sputtering experiment, argon ions bombard the sputtering target, and tantalum and aluminum atoms of the target material overflow and move towards the substrate to form a thin film resistor on the substrate. Since the first receiving groove is arranged in a ring on the first aluminum block, the tantalum block is evenly distributed on the aluminum block, and the tantalum and aluminum atoms will also be evenly distributed when they overflow and move towards the substrate, thereby improving the performance of the thin film resistor.

[0020] Optionally, a third receiving groove is provided in the middle of the first aluminum block, and the third receiving groove is used to dampen and receive the tantalum block.

[0021] By adopting the above technical solution, a third receiving groove for damping and accommodating tantalum blocks is opened in the middle of the first aluminum block, which allows for more flexible adjustment of the tantalum distribution in the sputtering target and improves the accuracy of determining the optimal atomic ratio, so as to produce tantalum aluminum nitride thin film resistors with better performance.

[0022] Optionally, the first aluminum block has multiple adjustment slots, which are connected to the first receiving slot. A tantalum strip is fixedly installed on the periphery of the tantalum block, and the adjustment slot is used to dampen the receiving tantalum strip.

[0023] By adopting the above technical solution, the adjustment groove is connected to the first receiving groove, so that the tantalum strip fixed on the periphery of the tantalum block can be damped and accommodated in the adjustment groove. The position of the tantalum block on the first aluminum block can be adjusted, so that the distribution of tantalum and aluminum can be flexibly adjusted during sputtering experiments. This helps to determine the optimal atomic ratio more accurately, and thus produce tantalum aluminum nitride thin film resistors with better performance.

[0024] Optionally, the adjustment groove is arranged radially along the first aluminum block, and two adjacent adjustment grooves are alternately arranged on the side of the first receiving groove closer to the third receiving groove and on the side of the first receiving groove farther away from the third receiving groove.

[0025] By adopting the above technical solution, some sputtering equipment will rotate the sputtering target when it is working. By using the distribution method of adjusting grooves arranged radially along the first aluminum block and two adjacent adjusting grooves alternately arranged on the side of the first receiving groove near and away from the third receiving groove, the distribution of tantalum strips can be limited, thereby enabling more accurate determination of the optimal atomic ratio, and thus producing tantalum aluminum nitride thin film resistors with better performance.

[0026] In summary, this application includes at least one of the following beneficial technical effects: 1. The sputtering target is made using an inlay technique, which solves the problem of the difficulty in separating and recycling tantalum and aluminum in traditional sputtering targets compared to the traditional method of mixing and melting tantalum powder and aluminum powder or hot pressing. This reduces resource waste and lowers production costs. 2. A novel embedding technique is used to fabricate tantalum-aluminum sputtering targets by embedding tantalum blocks on a first aluminum block. During the experimental stage of fabricating tantalum-aluminum nitride alloy thin films, the optimal atomic ratio of tantalum to aluminum in the sputtering target can be determined by the properties of the fabricated tantalum-aluminum nitride alloy thin films. Then, based on the correct data obtained, tantalum-aluminum embedded targets are fabricated, avoiding the dilemma of repeatedly fabricating targets and improving the fabrication efficiency. Attached Figure Description

[0027] Figure 1 This is a flowchart of Embodiment 1 of this application; Figure 2 This is a schematic diagram of the sputtering target of Embodiment 1 of this application; Figure 3 yes Figure 2 Sectional view at AA; Figure 4 This is a schematic diagram of the sputtering target of Embodiment 2 of this application; Figure 5 This is a schematic diagram of the sputtering target of Embodiment 3 of this application.

[0028] Explanation of reference numerals in the attached drawings: 1. First aluminum block; 2. Tantalum block; 3. Tantalum strip; 4. First receiving groove; 5. Second receiving groove; 6. Third receiving groove; 7. Adjustment groove. Detailed Implementation

[0029] The following is in conjunction with the appendix Figure 1-5 This application will be described in further detail.

[0030] Example 1.

[0031] This application discloses a method for fabricating an aluminum tantalum nitride thin film resistor.

[0032] Reference Figure 1 A method for fabricating a tantalum aluminum nitride thin film resistor includes a preparation stage and a production stage.

[0033] The preparation phase includes the following steps: Step S1: Prepare the first aluminum block 1 and tantalum block 2.

[0034] The first aluminum block 1 is typically made of high-purity aluminum, such as 99.99% pure aluminum, to ensure the basic performance of the sputtering target. Multiple first receiving grooves 4 are formed on the first aluminum block 1. These grooves 4 are used to dampen and accommodate the tantalum block 2, and are strip-shaped. The multiple first receiving grooves 4 are sequentially arranged on the first aluminum block 1, each with the same depth and progressively increasing bottom area. This arrangement allows for easy adjustment of the placement of the tantalum block 2 according to different needs, thereby changing the ratio of tantalum atoms to aluminum atoms in the sputtering target.

[0035] The tantalum block 2 is generally made of tantalum material with a purity of 99.9%, and its shape needs to be adapted to the first receiving groove 4. The dimensions of the tantalum block 2 must be precisely machined according to the size of the first receiving groove 4 to ensure that it can be tightly and dampedly accommodated in the first receiving groove 4.

[0036] Step S2: Press the tantalum block 2 into the first receiving groove 4 to form a sputtering target.

[0037] When the tantalum block 2 is pressed into the first receiving groove 4, the pressing force is controlled by a pressure device, so that the tantalum block 2 is pressed into the first receiving groove 4 smoothly.

[0038] Step S3: Sputtering targets with different numbers of tantalum blocks 2 are placed in the sputtering equipment with the substrate to conduct sputtering experiments to form the first experimental resistor.

[0039] The substrate is typically made of a material suitable for thin film deposition, such as glass or ceramics. The sputtering equipment is usually a high-frequency sputtering instrument. An inert gas, argon (Ar), is filled into a vacuum chamber. Under the influence of a high-frequency voltage electric field, a glow discharge is generated. The energetic particles of the argon bombard the sputtering target surface, causing solid atoms or molecules to escape from the target surface and deposit on the substrate, thus forming a thin film. In reactive sputtering, a certain amount of nitrogen is introduced during the sputtering process to react with the tantalum-aluminum atoms or molecules that are being deposited. During sputtering experiments, a negative bias voltage is applied to the substrate; this negative bias voltage is beneficial for producing tantalum-aluminum nitride alloy thin films with low pinhole rate.

[0040] Step S4: Determine the optimal atomic ratio based on the performance of the first experimental resistor.

[0041] The performance of the first experimental resistors made by sputtering targets with different numbers of tantalum blocks was tested, including sheet resistance, abrasion resistance, noise, and temperature coefficient. The optimal atomic ratio of tantalum and aluminum was determined to achieve the best performance.

[0042] The optimal performance of a thin-film resistor needs to be determined based on its application. For example, in environments with large temperature fluctuations (such as aerospace and automotive electronics) or circuits that require long-term stability (such as precision voltage sources and clock circuits), the temperature coefficient of the thin-film resistor needs to be smaller. In noise-sensitive scenarios such as high-gain amplifiers and audio equipment, the noise of the thin-film resistor needs to be reduced.

[0043] Step S5: Batch manufacture sputtering targets according to the optimal atomic ratio.

[0044] When mass-producing sputtering targets, it is necessary to ensure that the number and positional distribution of tantalum blocks 2 on the first aluminum block 1 are the same as the first experimental resistor corresponding to the optimal atomic ratio.

[0045] Step S6: Place the sputtering target and substrate into the sputtering equipment with different argon and nitrogen pressure ratios to conduct sputtering experiments and form the second experimental resistor.

[0046] Step S7: Determine the optimal pressure ratio of argon and nitrogen based on the performance of the second experimental resistor.

[0047] The production stage includes the following steps: Step S8: Place the sputtering target and substrate manufactured with the optimal atomic ratio into the sputtering equipment for sputtering experiment, and introduce argon and nitrogen into the sputtering equipment according to the optimal gas pressure ratio.

[0048] In the sputtering experiments in steps S3, S6 and S8, a negative bias voltage is applied to the substrate, thereby improving the density, adhesion and surface morphology of the thin film resistance.

[0049] In typical sputtering equipment, the sputtering target is on top and connected to the positive electrode, while the substrate is placed on the platform below and connected to the negative electrode.

[0050] In another embodiment, an anti-sputtering function is added to the sputtering apparatus, reversing the positive and negative electrodes, thereby enabling the sputtering target to be placed on the platform, with the substrate placed on top for sputtering experiments. This method helps reduce the occurrence of tantalum block 2 falling out of the first receiving tank 4.

[0051] The implementation principle of the method for fabricating a tantalum aluminum nitride thin-film resistor according to an embodiment of this application is as follows: starting from material preparation, through careful fabrication of the sputtering target and multiple sputtering experiments to determine the optimal atomic ratio and optimal gas pressure ratio, the tantalum aluminum nitride thin-film resistor is finally fabricated. After the sputtering target of this application is used, the tantalum block 2 can be removed from the aluminum block for recycling, thereby avoiding the problem of difficulty in separating and recycling tantalum and aluminum in traditional methods, reducing resource waste, and lowering production costs.

[0052] Example 2.

[0053] This application discloses a method for fabricating an aluminum tantalum nitride thin film resistor.

[0054] Reference Figure 1 The difference between the method for manufacturing a tantalum aluminum nitride thin film resistor in this application and Example 1 is that a plurality of second receiving grooves 5 are formed in the first aluminum block 1. The first receiving groove 4 and the second receiving groove 5 have the same depth, and the sum of the bottom areas of each second receiving groove 5 is less than or equal to the difference in the bottom areas of two adjacent second receiving grooves 5. The second receiving grooves 5 are also used to accommodate the tantalum block 2.

[0055] The first receiving tank 4 and the second receiving tank 5 are used together to receive the tantalum block 2. The first receiving tank 4 is used to coarsely adjust the ratio of tantalum atoms to aluminum atoms in the sputtering target, and the second receiving tank 5 is used to finely adjust the ratio of tantalum atoms to aluminum atoms in the sputtering target, thereby improving the accuracy of the optimal atomic ratio.

[0056] When the tantalum block 2 is pressed into the first receiving groove 4 and the second receiving groove 5 to form the sputtering target, the remaining first receiving groove 4 and the second receiving groove 5 are filled with second aluminum blocks. The use of second aluminum blocks to fill the first receiving groove 4 where the tantalum block 2 is not placed improves the flatness of the sputtering target surface, thereby improving the quality of the thin film resistor.

[0057] The implementation principle of the method for manufacturing a tantalum aluminum nitride thin film resistor in this application embodiment is as follows: when manufacturing the sputtering target, both the first receiving groove 4 and the second receiving groove 5 can accommodate the tantalum block 2, thereby improving the accuracy of adjusting the tantalum and aluminum ratio, and thus improving the performance stability and consistency of the thin film resistor.

[0058] Example 3.

[0059] This application discloses a method for fabricating an aluminum tantalum nitride thin film resistor.

[0060] Reference Figure 1 The difference between the method for manufacturing a tantalum aluminum nitride thin film resistor in this application and that in Example 1 is that the first receiving groove 4 is circular, and the depth and bottom area of ​​the first receiving groove 4 are the same. It is also arranged in a ring shape on the first aluminum block 1. A third receiving groove 6 is formed in the middle of the first aluminum block 1. The third receiving groove 6 is circular and also serves to dampen the receiving of the tantalum block 2.

[0061] When placing tantalum block 2 into the first receiving tank 4 and the second receiving tank 5, the number of tantalum blocks 2 that need to be placed may not be evenly distributed in the first receiving tank 4. The extra tantalum block 2 is placed into the second receiving tank 5. By accommodating tantalum block 2 in the first receiving tank 4 and the second receiving tank 5, tantalum can be distributed in the central part of the sputtering target as well. This makes the deposition of the thin film more uniform during the sputtering process and improves the performance of the thin film resistance.

[0062] The first aluminum block 1 also has multiple adjustment slots 7, which are connected to the first receiving slot 4. Tantalum strips 3 are fixedly installed on the periphery of the tantalum block 2, and the adjustment slots 7 are used to dampen and accommodate the tantalum strips 3. The adjustment slots 7 are arranged radially along the first aluminum block 1, with adjacent adjustment slots 7 alternately located on the side of the first receiving slot 4 closer to the third receiving slot 6 and on the side of the first receiving slot 4 farther from the third receiving slot 6. This arrangement allows for further precise adjustment of the tantalum distribution in the sputtering target, thereby enabling finer control of the thin-film resistor performance. Coarse adjustment can be achieved by adding or removing tantalum blocks 2, while fine adjustment can be achieved by grinding the tantalum strips 3 to adjust their length.

[0063] The implementation principle of the method for manufacturing a tantalum aluminum nitride thin-film resistor according to an embodiment of this application is as follows: by adjusting the setting of the groove 7 and the tantalum strip 3, the amount of tantalum can be finely adjusted according to actual needs after the sputtering target is manufactured. This fine-tuning function allows the sputtering target to better adapt to different sputtering conditions and performance requirements, improves the performance controllability and stability of the thin-film resistor, and further enhances product quality and production efficiency.

[0064] The above are all preferred embodiments of this application, and are not intended to limit the scope of protection of this application. Therefore, all equivalent changes made in accordance with the structure, shape and principle of this application should be covered within the scope of protection of this application.

Claims

1. A method for fabricating an aluminum tantalum nitride thin-film resistor, characterized in that, Includes the following steps: Prepare a first aluminum block (1) and a tantalum block (2). A plurality of first receiving grooves (4) are opened on the first aluminum block (1). The first receiving grooves (4) are used for damping and receiving the tantalum block (2). Press the tantalum block (2) into the first receiving groove (4) to form a sputtering target. Place the sputtering targets with different numbers of tantalum blocks (2) and the substrate into the sputtering equipment to conduct sputtering experiments to form a first experimental resistor. Determine the optimal atomic ratio according to the performance of the first experimental resistor. Batch manufacture sputtering targets according to the optimal atomic ratio. Place the sputtering targets and substrates made with the optimal atomic ratio into the sputtering equipment to conduct sputtering experiments to produce tantalum aluminum nitride thin film resistors.

2. The method for fabricating a tantalum aluminum nitride thin-film resistor according to claim 1, characterized in that, After mass production of sputtering targets and before fabrication of tantalum aluminum nitride thin film resistors, the process further includes the following steps: placing the sputtering targets and substrates into a sputtering apparatus with different argon and nitrogen pressure ratios to conduct sputtering experiments and form a second experimental resistor; determining the optimal argon and nitrogen pressure ratio based on the performance of the second experimental resistor; and introducing argon and nitrogen into the sputtering apparatus according to the optimal pressure ratio when placing the sputtering targets and substrates into the sputtering apparatus for sputtering experiments.

3. The method for fabricating a tantalum aluminum nitride thin film resistor according to claim 1, characterized in that: During the sputtering experiment, a negative bias voltage was applied to the substrate.

4. The method for fabricating a tantalum aluminum nitride thin film resistor according to claim 1, characterized in that: When the tantalum block (2) is pressed into the first receiving groove (4) to form a sputtering target, the remaining first receiving groove (4) is filled with a second aluminum block.

5. The method for fabricating a tantalum aluminum nitride thin film resistor according to claim 1, characterized in that: The first receiving groove (4) is strip-shaped, and multiple first receiving grooves (4) are arranged sequentially on the first aluminum block (1). The depth of each first receiving groove (4) is the same, and the bottom area of ​​multiple first receiving grooves (4) increases sequentially.

6. The method for fabricating a tantalum aluminum nitride thin film resistor according to claim 5, characterized in that: The first aluminum block (1) has multiple second receiving grooves (5), which are used to dampen the receiving tantalum block (2). The first receiving groove (4) and the second receiving groove (5) have the same depth, and the sum of the bottom areas of each second receiving groove (5) is less than or equal to the difference in the bottom areas of two adjacent second receiving grooves (5).

7. The method for fabricating a tantalum aluminum nitride thin film resistor according to claim 1, characterized in that: The first receiving groove (4) is circular and is arranged in a ring on the first aluminum block (1).

8. The method for fabricating a tantalum aluminum nitride thin film resistor according to claim 7, characterized in that: The first aluminum block (1) has a third receiving groove (6) in the middle, which is used to dampen and receive the tantalum block (2).

9. The method for fabricating a tantalum aluminum nitride thin film resistor according to claim 7, characterized in that: The first aluminum block (1) has multiple adjustment slots (7), which are connected to the first receiving slot (4). A tantalum strip (3) is fixedly installed on the periphery of the tantalum block (2), and the adjustment slot (7) is used to dampen the receiving tantalum strip (3).

10. A method for fabricating a tantalum aluminum nitride thin-film resistor according to claim 9, characterized in that: The adjustment groove (7) is arranged radially along the first aluminum block (1), and two adjacent adjustment grooves (7) are alternately arranged on the side of the first receiving groove (4) close to the third receiving groove (6) and on the side of the first receiving groove (4) away from the third receiving groove (6).

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